WO2019127716A1

WO2019127716A1 - Wiring structure of bending area of flexible oled display panel, and flexible oled display panel

Info

Publication number: WO2019127716A1
Application number: PCT/CN2018/073065
Authority: WO
Inventors: 陈彩琴; 刘丹
Original assignee: 武汉华星光电半导体显示技术有限公司
Priority date: 2017-12-27
Filing date: 2018-01-17
Publication date: 2019-07-04
Also published as: CN108091679B; CN108091679A

Abstract

A wiring structure of a bending area of a flexible OLED display panel. The wiring structure comprises multiple first conductive strips (10), an insulating layer (20), and multiple second conductive strips (30). The multiple first conductive strips (10) are arranged at intervals; the insulating layer (20) is provided on the multiple first conductive strips (10) and in the intervals among the first conductive strips (10); the multiple second conductive strips (30) are arranged at intervals on the insulating layer (20); and the multiple second conductive strips (30) penetrate through the insulating layer (20) to connect to the multiple first conductive strips (10). The existing wiring replacement layer is omitted in the bending area of the flexible OLED display panel, and the wiring structure of the bending area still has the effective stress release characteristic when the wiring structure is bent, so that the risk of wiring breaking caused by bending is avoided.

Description

Trace structure of flexible OLED display panel bending area, flexible OLED display panel

Technical field

The present invention relates to the field of flexible display technologies, and in particular to a routing structure of a flexible OLED display panel bending region and a flexible OLED display panel.

Background technique

At present, the design of the trace of the flexible OLED display panel Bending Area BA still uses the first trace (which is made of the same material as the gate of the transistor) GE1 and the second trace (which is connected to the storage capacitor) The first capacitor electrode is made of the same material at the same time) GE2 is switched to the trace line change layer (which is made of the same material as the source and drain of the transistor) SD mode, so that the first trace GE1 and the first trace can be avoided. The second trace GE2 is broken due to the large stress. The specific structure is shown in Figure 1. In FIG. 1, the first trace GE1, the second trace GE2, and the trace changeover layer SD are not in the same layer, and the first trace GE1 and the second trace GE2 pass through vias (not shown) and respectively Corresponding trace change line layer SD connection. Among them, the deep hole DH shown in Fig. 1 is used to fill the organic insulating material to better release the stress at the time of bending, which will be described below.

2 is a schematic structural view of a bending region of a prior art flexible OLED display panel. Referring to FIG. 2, in the bending region of the existing flexible OLED display panel, the interlayer insulating layer ILD is a three-layer design including a first interlayer insulating layer ILD1 made of SiO _{2 and} made of SiN _x . A second interlayer insulating layer ILD2 and a third interlayer insulating layer OILD made of an organic insulating material. The third interlayer insulating layer OILD is only present in the bent region, and other regions such as the display region do not have the third interlayer insulating layer OILD. Usually, the third interlayer insulating layer OILD will be poured into the Dip Hole DH of the bending zone to improve the folding resistance of the bending zone. In addition, the first trace GE1 is formed on the first insulating layer GI1, the second trace GE2 is formed on the second insulating layer GI2, and the trace-changing layer SD is formed on the third interlayer insulating layer OILD, FIG. 2 It is convenient to illustrate how the third interlayer insulating layer OILD is poured into the counterbore DH, so the first trace GE1 and the second trace GE2 are not shown.

In the actual process, the third interlayer insulating layer OILD forms two bumps B1 on the second interlayer insulating layer ILD2 after being poured into the counterbore DH, and the thickness of the two bumps B1 is 1 μm. As described above, when the wiring line changing layer SD is formed on the third interlayer insulating layer OILD, the thickness of the wiring line changing layer SD is 0.7 μm. Thus, the sum of the thickness of the bump B1 and the thickness of the trace line change layer SD is 1.7 μm, and the thickness of the flat layer PLN is 1.5 μm, which causes the trace line change layer SD of the bump B1 to exceed the flat layer PLN. When the cathode etching (Anode Etch) is performed later, the trace line layer SD exceeding the flat layer PLN is etched away, thereby affecting the stable connection between the trace line change layer SD and the first trace GE1 and the second trace GE2. Sex, which in turn affects device characteristics.

Summary of the invention

In order to solve the above problems in the prior art, an object of the present invention is to provide a wiring structure and a flexible OLED display panel of a flexible OLED display panel bending region for removing a wire changing layer of a bending region.

According to an aspect of the present invention, a trace structure of a bend region of a flexible OLED display panel is provided, the trace structure including a plurality of first conductive strips, an insulating layer, and a plurality of second conductive strips, the plurality of The first conductive strips are spaced apart, the insulating layer is disposed on the plurality of first conductive strips and disposed in the interval between the first conductive strips, and the plurality of second conductive strips are spaced apart from the insulating layer The plurality of second conductive strips are connected to the plurality of first conductive strips through the insulating layer.

Further, each second conductive strip is opposite to a spacing between the corresponding two adjacent first conductive strips, and each of the second conductive strips penetrates through the insulating layer to respectively correspond to two adjacent first conductive materials Strip connection.

Further, the plurality of second conductive strips are connected to each other as a whole, and the plurality of first conductive strips are connected to each other as a whole.

Further, the first conductive strip is formed simultaneously with the gate of the transistor of the flexible OLED display panel by using the same material, and the second conductive strip and the first capacitor electrode of the storage capacitor of the flexible OLED display panel The same material is simultaneously fabricated; wherein the second capacitor electrode of the storage capacitor of the flexible OLED display panel is shared with the gate of the transistor of the flexible OLED display panel.

Further, the second conductive strip is made of the same metal material as the gate of the transistor of the flexible OLED display panel, and the first conductive strip and the active layer of the transistor of the flexible OLED display panel are used. The same material is made at the same time.

Further, the second conductive strip and the first capacitor electrode of the storage capacitor of the flexible OLED display panel are simultaneously made of the same metal material, and the first conductive strip and the transistor of the flexible OLED display panel are The source layer is simultaneously formed using the same material; wherein the second capacitor electrode of the storage capacitor of the flexible OLED display panel is shared with the gate of the transistor of the flexible OLED display panel.

According to another aspect of the present invention, a trace structure of a bend region of a flexible OLED display panel is provided, the trace structure including a first trace and a second trace insulated from each other, the first trace And the second trace has a curved shape.

Further, the first trace is made simultaneously with the gate of the transistor of the flexible OLED display panel using the same material.

Further, the second trace is made of the same material as the first capacitor electrode of the storage capacitor of the flexible OLED display panel; wherein the second capacitor electrode of the storage capacitor of the flexible OLED display panel The gates of the transistors of the flexible OLED display panel are shared.

According to still another aspect of the present invention, a flexible OLED display panel is provided, the bent region of the flexible OLED display panel having the above-described routing structure.

The beneficial effects of the invention: the existing routing change layer is omitted in the bending zone of the flexible OLED display panel of the invention, and the routing structure of the bending zone still has the characteristics of effectively releasing stress when bending. Therefore, there is no risk of bending and breaking.

DRAWINGS

The above and other aspects, features and advantages of the embodiments of the present invention will become more apparent from

1 is a schematic view showing a wiring structure of a bending region of a flexible OLED display panel of the prior art;

2 is a schematic structural view of a bending region of a flexible OLED display panel of the prior art;

3 is a schematic structural view of a display area of a flexible OLED display panel according to an embodiment of the present invention;

4 is a schematic illustration of a trace structure of a bend region of a flexible OLED display panel in accordance with an embodiment of the present invention;

5 is a schematic diagram of a trace structure of a bend region of a flexible OLED display panel according to another embodiment of the present invention;

6 is a schematic diagram of a trace structure of a bend region of a flexible OLED display panel according to still another embodiment of the present invention;

7 is a schematic diagram of a trace structure of a bending region of a flexible OLED display panel according to still another embodiment of the present invention;

8 is a schematic diagram of a trace structure of a bend region of a flexible OLED display panel according to still another embodiment of the present invention;

9 is a schematic structural view of a bending region of a flexible OLED display panel according to an embodiment of the present invention.

Detailed ways

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the invention may be embodied in many different forms and the invention should not be construed as being limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and the application of the invention, and the various embodiments of the invention can be understood.

In the drawings, the thickness of layers and regions are exaggerated for clarity. The same reference numerals are used throughout the drawings and the drawings.

It will be understood that, although the terms "first," "second," etc. may be used herein to describe various elements, these elements are not limited by these terms. These terms are only used to distinguish one element from another.

It will be understood that when an element such as a layer, a film, a region or a substrate is referred to as "on" another element, the element may be directly on the other element or the intermediate element may be present. Alternatively, when an element is referred to as being "directly on" another element, there is no intermediate element.

Fig. 3 is a schematic structural view of a display area of a flexible OLED display panel according to an embodiment of the present invention.

Referring to FIG. 3, a display area of a flexible OLED display panel according to an embodiment of the present invention includes: a flexible substrate 100, an interlayer buffer layer 110, an active layer 120, a source 130a, a drain 130b, a first insulating layer 140, and a gate. a pole 150, a second insulating layer 160, a first capacitor electrode 170, a first interlayer insulating layer 180a, a second interlayer insulating layer 180b, a source contact layer 190a, a drain contact layer 190b, a flat layer 200, a cathode 210, A pixel defining layer 220, an organic light emitting layer (or OLED functional layer) 230, and an anode 240.

Specifically, the flexible substrate 100 includes a first substrate 101, an inter-board buffer layer 102 disposed on the first substrate 101, and a second substrate 103 disposed on the inter-board buffer layer 102. The first substrate 101 and the second substrate 103 are formed using polyimide (PI) or other suitable flexible material.

The interlayer buffer layer 110 is disposed on the second substrate 103. The active layer 120, the source 130a, and the drain 130b are disposed on the interlayer buffer layer 110, and the source 130a and the drain 130b are respectively located on both sides of the active layer 120.

The first insulating layer 140 is disposed on the active layer 120, the source 130a, the drain 130b, and the interlayer buffer layer 110. The gate 150 is disposed on the first insulating layer 140. The second insulating layer 160 is disposed on the first insulating layer 140 and the gate 150. The first capacitor electrode 170 is disposed on the second insulating layer 160, and the first capacitor electrode 170 is opposite to the gate 150. In the present embodiment, in addition to the gate 150 being used as the gate of the transistor, the gate 150 can also be used as the second capacitor electrode to form a storage capacitor (not shown) with the first capacitor electrode 170.

The first interlayer insulating layer 180a is disposed on the first capacitor electrode 170 and the second insulating layer 160. The first interlayer insulating layer 180a is made of SiO ₂ . The second interlayer insulating layer 180b disposed on the first interlayer insulating layer 180a, the second interlayer insulating layer 180b is made of SiN _x.

The source contact layer 190a and the drain contact layer 190b are disposed on the second interlayer insulating layer 180b, and the source contact layer 190a and the drain contact layer 190b penetrate the second interlayer insulating layer 180b, the first interlayer insulating layer 180a, The second insulating layer 160 and the first insulating layer 140 are then in contact with the source 130a and the drain 130b, respectively.

The flat layer 200 is disposed on the source contact layer 190a, the drain contact layer 190b, and the second interlayer insulating layer 180b. The cathode 210 is disposed on the flat layer 200, and the cathode 210 is in contact with the drain contact layer 190b after passing through the flat layer 200.

The pixel defining layer 220 is disposed on the flat layer 200 and the cathode 210, and the pixel defining layer 220 has a via (not labeled) therein that exposes a portion of the cathode 210. The organic light emitting layer 230 is disposed on the exposed cathode 210, and the anode 240 is disposed on the organic light emitting layer 230.

4 is a schematic diagram of a trace structure of a bend region of a flexible OLED display panel in accordance with an embodiment of the present invention. In FIG. 4, the left side is a plan view, and the right side is a cross-sectional view along the line A-A in the top view. It should be noted that the traces of the flexible OLED display panel according to the embodiment of the present invention, such as the gate traces, the first capacitor electrode traces, and other traces, may adopt the trace structure shown in FIG. 4. Further, in FIG. 4, in order to facilitate the connection relationship of the first conductive strip and the second conductive strip, the wiring insulating layer and other insulating layers are not shown.

Referring to FIG. 4, a trace structure of a bend region of a flexible OLED display panel according to an embodiment of the present invention includes a plurality of first conductive strips 10, a first trace insulating layer 20, and a plurality of second conductive strips 30.

A plurality of first conductive strips 10 are spaced apart. Further, the plurality of first conductive strips 10 are spaced apart in the lateral direction. The first trace insulating layer 20 is disposed on the plurality of first conductive strips 10 and disposed in a space between the two first conductive strips 10 adjacent to each other. A plurality of second conductive strips 30 are disposed on the first trace insulating layer 20, and the plurality of second conductive strips 30 are also spaced apart. Further, a plurality of second conductive strips 30 are spaced apart in the lateral direction. A plurality of second conductive strips 30 are connected to the plurality of first conductive strips 10 through the first trace insulating layer 20 .

In this manner, the plurality of second conductive strips 30 and the plurality of first conductive strips 10 are layered and connected to form a routing structure for forming a bending region of the flexible OLED display panel, which helps the wiring structure to be released when the bending region is bent. Stress, so it is not easy to break.

Further, in order to further release the stress generated when the routing structure is bent, each second conductive strip 30 is opposed to the interval between the corresponding adjacent two first conductive strips 10, and each second conductive strip 30 The first trace insulating layer 20 is penetrated to be respectively connected to the corresponding two adjacent first conductive strips 10. That is to say, the plurality of second conductive strips 30 and the plurality of first conductive strips 10 are alternately arranged up and down and connected in series to form the trace structure.

In this embodiment, the first conductive strip 10 and the gate 150 are made of the same material at the same time, and the second conductive strip 10 and the first capacitor electrode 170 are made of the same material at the same time, so the first trace insulation The layer 20 and the second insulating layer 160 are simultaneously made of the same material. Of course, it should be understood that the second trace insulating layer 40 may be simultaneously formed under the plurality of first conductive strips 10 using the same material as the first insulating layer 140, and the plurality of second conductive strips 30 and the first The third trace insulating layer 50 can be simultaneously formed on the trace insulating layer 20 by the same material as the first interlayer insulating layer 180a.

FIG. 5 is a schematic diagram of a trace structure of a bend region of a flexible OLED display panel according to another embodiment of the present invention. In FIG. 5, the left drawing is a top view, and the right drawing is a cross-sectional view taken along line B-B in the top view. It should be noted that the traces of the flexible OLED display panel according to the embodiment of the present invention, such as the gate traces, the first capacitor electrode traces, and other traces, may adopt the trace structure shown in FIG. 5.

Referring to FIG. 5, different from the trace structure shown in FIG. 4, the first conductive strip 10A is simultaneously formed by using the same material as the active layer 120, and the second conductive strip 30A and the gate 150 are used. The same material is simultaneously formed, so that the first wiring insulating layer 20A and the first insulating layer 140 are simultaneously made of the same material. Of course, it should be understood that the second trace insulating layer 40A may be simultaneously formed under the plurality of first conductive strips 10A using the same material as the interlayer buffer layer 110, and the plurality of second conductive strips 30A and the first The third wiring insulating layer 50A can be simultaneously formed on the wiring insulating layer 20A by the same material as the first interlayer insulating layer 180a.

6 is a schematic diagram of a trace structure of a bend region of a flexible OLED display panel according to still another embodiment of the present invention. In Fig. 6, the left side is a plan view, and the right side is a cross-sectional view taken along line C-C in the top view. It should be noted that the traces of the flexible OLED display panel according to the embodiment of the present invention, such as the gate traces, the first capacitor electrode traces, and other traces, may adopt the trace structure shown in FIG. 6.

Referring to FIG. 6, different from the trace structure shown in FIG. 4, the first conductive strip 10B, the second conductive strip 30B and the first capacitive electrode are simultaneously formed by using the same material as the active layer 120. 170 is made of the same material at the same time, so the first trace insulating layer 20B is composed of two insulating layers, and one insulating layer and the first insulating layer 140 are made of the same material at the same time, and the other insulating layer is The second insulating layer 160 is made of the same material at the same time. Of course, it should be understood that the second trace insulating layer 40B may be simultaneously formed under the plurality of first conductive strips 10B using the same material as the interlayer buffer layer 110, and in the plurality of second conductive strips 30B and the first The third trace insulating layer 50B can be simultaneously formed on the trace insulating layer 20B by the same material as the second insulating layer 160.

Figure 7 is a schematic illustration of a trace structure of a bend region of a flexible OLED display panel in accordance with yet another embodiment of the present invention. In FIG. 7, the left side is a top view, and the right side is a cross-sectional view along the D-D line in the top view. It should be noted that the traces of the flexible OLED display panel according to the embodiment of the present invention, such as the gate traces, the first capacitor electrode traces, and other traces, may adopt the trace structure shown in FIG. 7.

Referring to FIG. 7, different from the routing structure shown in FIG. 4, the plurality of first conductive strips 10 shown in FIG. 4 are integrally connected to each other to form the first conductive strip 10C shown in FIG. 7, as shown in FIG. The plurality of second conductive strips 30 are integrally connected to each other to form the second conductive strip 30C shown in FIG. 7, and the second conductive strip 30C penetrates the insulating layer 20 to be connected to the first conductive strip 10C.

FIG. 8 is a schematic diagram of a trace structure of a bend region of a flexible OLED display panel according to still another embodiment of the present invention. In FIG. 8, a trace structure of a flexible OLED display panel bending region according to another embodiment of the present invention includes a first trace GE1 and a second trace GE2, wherein the first trace GE1 can serve as a gate trace The second trace GE2 can serve as the first capacitor electrode trace, but the present invention is not limited thereto. The second trace GE2 and the first capacitor electrode 170 are made of the same material at the same time, and the first trace GE1 and the gate 150 are made of the same material at the same time.

In this embodiment, the first trace GE1 and the second trace GE2 of the flexible OLED display panel bending area BA have a curved shape to release the bending stress at the time of bending, so that the phenomenon of breakage is less likely to occur. Further, the first trace GE1 and the second trace GE2 have an S-shaped curved shape, but the present invention is not limited thereto.

Through the routing structure of the above embodiments, the routing change line layer SD (shown in FIG. 4) of the bending region of the flexible OLED display panel can be removed, thereby avoiding the risk of corrosion. The structure of the bending region of the flexible OLED display panel according to the embodiment of the present invention will be described in detail below.

Referring to FIG. 9, a bending region of a flexible OLED display panel according to an embodiment of the present invention includes: a flexible substrate 100, an interlayer buffer layer 110, a first insulating layer 140, a second insulating layer 160, and a first interlayer insulating layer 180a. a second interlayer insulating layer 180b, a third interlayer insulating layer 180c, a flat layer 200, and a pixel defining layer 220. In FIG. 9, in order to facilitate the illustration of the filling effect of the third interlayer insulating layer 180c, the wiring structure is not illustrated. It should be understood that the bend region of the flexible OLED display panel according to the embodiment of the present invention has at least one of the trace structures shown in FIGS. 4 to 8.

The interlayer buffer layer 110, the first insulating layer 140, the second insulating layer 160, the first interlayer insulating layer 180a, and the second interlayer insulating layer 180b are sequentially stacked on the second substrate 103. A counterbore DH is formed in the first insulating layer 140, the second insulating layer 160, the first interlayer insulating layer 180a, and the second interlayer insulating layer 180b. The third interlayer insulating layer 180c is disposed on the second interlayer insulating layer 180b and filled into the filled counterbore DH. The flat layer 200 and the pixel defining layer 220 are sequentially laminated on the second interlayer insulating layer 180b and the third interlayer insulating layer 180c.

As such, the existing routing layer is omitted in the bending region of the flexible OLED display panel according to the embodiment of the present invention, and the routing structure of the bending region still has the characteristic of effectively releasing stress when bending. Therefore, there is no risk of bending and breaking.

While the invention has been shown and described with respect to the specific embodiments the embodiments of the invention Various changes in details.

Claims

A routing structure of a flexible OLED display panel bending region, wherein the routing structure comprises a plurality of first conductive strips, an insulating layer and a plurality of second conductive strips, wherein the plurality of first conductive strips are spaced apart, The insulating layer is disposed on the plurality of first conductive strips and disposed in the interval between the first conductive strips, and the plurality of second conductive strips are spaced apart on the insulating layer, the plurality of Two conductive strips are connected to the plurality of first conductive strips through the insulating layer.
The wiring structure according to claim 1, wherein each of the second conductive strips is opposed to a space between the corresponding adjacent two first conductive strips, and each of the second conductive strips penetrates the insulating layer to respectively Connected to two adjacent first conductive strips.
The wiring structure according to claim 1, wherein the plurality of second conductive strips are connected to each other as a whole, and the plurality of first conductive strips are connected to each other as a whole.
The routing structure of claim 1 , wherein the first conductive strip and the gate of the transistor of the flexible OLED display panel are simultaneously made of the same material, the second conductive strip and the flexible OLED The first capacitor electrode of the storage capacitor of the display panel is simultaneously made of the same material; wherein the second capacitor electrode of the storage capacitor of the flexible OLED display panel is shared with the gate of the transistor of the flexible OLED display panel.
The routing structure of claim 2, wherein the first conductive strip and the gate of the transistor of the flexible OLED display panel are simultaneously made of the same material, the second conductive strip and the flexible OLED The first capacitor electrode of the storage capacitor of the display panel is simultaneously made of the same material; wherein the second capacitor electrode of the storage capacitor of the flexible OLED display panel is shared with the gate of the transistor of the flexible OLED display panel.
The routing structure of claim 3, wherein the first conductive strip and the gate of the transistor of the flexible OLED display panel are simultaneously made of the same material, the second conductive strip and the flexible OLED The first capacitor electrode of the storage capacitor of the display panel is simultaneously made of the same material; wherein the second capacitor electrode of the storage capacitor of the flexible OLED display panel is shared with the gate of the transistor of the flexible OLED display panel.
The trace structure according to claim 1, wherein the second conductive strip and the gate of the transistor of the flexible OLED display panel are simultaneously made of the same metal material, the first conductive strip and the flexible The active layers of the transistors of the OLED display panel are fabricated simultaneously using the same material.
The wiring structure according to claim 2, wherein the second conductive strip and the gate of the transistor of the flexible OLED display panel are simultaneously made of the same metal material, the first conductive strip and the flexible The active layers of the transistors of the OLED display panel are fabricated simultaneously using the same material.
The routing structure of claim 1 , wherein the second conductive strip and the first capacitor electrode of the storage capacitor of the flexible OLED display panel are simultaneously made of the same metal material, the first conductive strip and the first conductive strip The active layer of the transistor of the flexible OLED display panel is simultaneously made of the same material; wherein the second capacitor electrode of the storage capacitor of the flexible OLED display panel is shared with the gate of the transistor of the flexible OLED display panel.
The routing structure of claim 2, wherein the second conductive strip and the first capacitive electrode of the storage capacitor of the flexible OLED display panel are simultaneously made of the same metal material, the first conductive strip and The active layer of the transistor of the flexible OLED display panel is simultaneously made of the same material; wherein the second capacitor electrode of the storage capacitor of the flexible OLED display panel is shared with the gate of the transistor of the flexible OLED display panel.
A trace structure of a bend region of a flexible OLED display panel, wherein the trace structure includes a first trace and a second trace insulated from each other, and the first trace and the second trace are both Curved shape.
The trace structure of claim 11, wherein the first trace is made simultaneously with the gate of the transistor of the flexible OLED display panel using the same material.
The routing structure of claim 11 , wherein the second trace is formed simultaneously with the first capacitive electrode of the storage capacitor of the flexible OLED display panel using the same material; wherein the flexible OLED display panel The second capacitive electrode of the storage capacitor is shared with the gate of the transistor of the flexible OLED display panel.
The routing structure of claim 12, wherein the second trace is made of the same material as the first capacitor electrode of the storage capacitor of the flexible OLED display panel; wherein the flexible OLED display panel The second capacitive electrode of the storage capacitor is shared with the gate of the transistor of the flexible OLED display panel.
A flexible OLED display panel, wherein the bend region of the flexible OLED display panel has the trace structure of claim 1.