WO2020228199A1

WO2020228199A1 - Display panel and manufacturing method therefor, and display device

Info

Publication number: WO2020228199A1
Application number: PCT/CN2019/105264
Authority: WO
Inventors: 丁玎
Original assignee: 武汉华星光电半导体显示技术有限公司
Priority date: 2019-05-16
Filing date: 2019-09-11
Publication date: 2020-11-19
Also published as: CN110211971B; CN110211971A

Abstract

A display panel (20) and a manufacturing method therefor, and a display device. The display panel (20) comprises a display region (21) and a bending region (22) located at the outer side of the display region (21). The display panel (20) comprises a source/drain metal layer (240). In the bending region (22), the display panel (20) comprises an organic photoresist layer (221). A bending region inter-layer dielectric layer (232) is provided on the side of the organic photoresist layer (221) close to the source/drain metal layer (240). Therefore, breakage of source/drain wiring (241) can be avoided.

Description

Display panel and preparation method thereof, and display device

Technical field

This application relates to the field of display technology, in particular to a display panel, a manufacturing method thereof, and a display device.

Background technique

OLED (organic Light-emitting diode (organic electroluminescence display device) has gradually become the mainstream in the display field due to its excellent performance such as low power consumption, high color saturation, and wide viewing angle. In order to increase the screen-to-body ratio of the display area, a bending area is usually formed around the lower display area, which is bent to the back of the panel during the module manufacturing process.

The source/drain (SD) traces are deposited above the organic photoresist layer. During the source/drain dry etching process, due to the corrosion of aluminum, the organic photoresist layer under the source/drain traces will be etched, causing loss of the organic photoresist layer.

That is, in the prior art, the organic photoresist layer is easily lost during the dry etching process of the source/drain traces, thereby causing the source/drain traces to break.

technical problem

Technical solutions

The embodiments of the present application provide a display panel, a manufacturing method thereof, and a display device, which can reduce the loss of the organic photoresist layer during the dry etching process of the source/drain traces, thereby avoiding the source/drain traces from breaking.

In order to solve the above problems, in the first aspect, the present application provides a display panel, the display panel includes a display area and a bending area located outside the display area, the display panel includes a source/drain metal layer, In the bending area, the display panel includes an organic photoresist layer, and a bending area interlayer dielectric layer is provided on a side of the organic photoresist layer close to the source/drain metal layer.

Wherein, the source/drain metal layer includes source/drain metal lines arranged at intervals in a direction parallel to the surface of the display panel; in the bending area, the bending zone layer The interlayer dielectric layer is located in the projection area of the source/drain metal lines, and the thickness of the interlayer dielectric layer in the bending area is a first preset value.

Wherein, in the display area, on the side of the source/drain metal layer close to the organic photoresist layer, a first interlayer dielectric layer in the display area, a second interlayer dielectric layer in the display area, A gate metal layer and a gate insulating layer in the display area; a surface of the first interlayer dielectric layer in the display area away from the source/drain metal layer and the interlayer dielectric layer in the bending area away from the source One side surface of the electrode/drain metal layer is flush.

Wherein, in the projection area of the source/drain metal line, the thickness of the first interlayer dielectric layer of the display area is the first preset value; in the projection of the source/drain metal line Between regions, the thickness of the first interlayer dielectric layer of the display area is a second preset value, wherein the first preset value is greater than the second preset value.

Wherein, the first interlayer dielectric layer in the display area and the interlayer dielectric layer in the bending area form a film layer at a first preset temperature, and the second interlayer dielectric layer in the display area is at a second preset temperature. A film layer is formed, and the first preset temperature is lower than the second preset temperature.

Wherein, the first preset value is greater than 0 and does not exceed 200 nanometers.

Wherein, the organic photoresist layer is filled with organic photoresist, and the material of the interlayer dielectric layer in the bending zone is silicon nitride, silicon oxide or a composite of both.

In order to solve the above problems, in a second aspect, the present application provides a display device, the display device includes a display panel, the display panel includes a display area and a bending area located outside the display area, the display panel includes a source Electrode/drain metal layer,

In the bending area, the display panel includes an organic photoresist layer, and a bending area interlayer dielectric layer is provided on a side of the organic photoresist layer close to the source/drain metal layer.

Wherein, the source/drain metal layer includes source/drain metal lines arranged at intervals in a direction parallel to the surface of the display panel;

In the bending region, the interlayer dielectric layer in the bending region is located in the projection area of the source/drain metal line, and the thickness of the interlayer dielectric layer in the bending region is a first preset value .

Wherein, in the display area, on the side of the source/drain metal layer close to the organic photoresist layer, a first interlayer dielectric layer in the display area, a second interlayer dielectric layer in the display area, A gate metal layer and a gate insulating layer in the display area;

The surface of the first interlayer dielectric layer of the display area away from the source/drain metal layer and the surface of the bending area interlayer dielectric layer away from the source/drain metal layer are flush .

Wherein, in the projection area of the source/drain metal line, the thickness of the first interlayer dielectric layer in the display area is the first preset value;

Between the projection areas of the source/drain metal lines, the thickness of the first interlayer dielectric layer in the display area is a second preset value, wherein the first preset value is greater than the second preset value. Set value.

In order to solve the above problems, in a third aspect, the present application provides a method for manufacturing a display panel, the display panel including a display area and a bending area located outside the display area, the manufacturing method includes:

Preparing an organic photoresist layer in the bending area of the display panel;

Preparing an interlayer dielectric layer in the bending area on the organic photoresist layer;

A source/drain metal layer is prepared on the interlayer dielectric layer in the bending zone, wherein the interlayer dielectric layer in the bending zone is used to reduce the The loss of organic photoresist layer.

Wherein, the preparation of an interlayer dielectric layer in the bending zone on the organic photoresist layer includes:

Preparing the interlayer dielectric layer in the bending zone with a thickness of a first preset value on the organic photoresist layer;

The preparing a source/drain metal layer on the interlayer dielectric layer in the bending region includes:

Prepared by a dry etching process to prepare source/drain metal lines arranged at intervals in a direction parallel to the surface of the display panel, and place all the source/drain metal lines between the projection areas of the source/drain metal lines. The thickness of the interlayer dielectric layer in the bending zone is etched to a second preset value.

Wherein, the preparing an organic photoresist layer in the bending area of the display panel includes:

A gate insulating layer in a display area, a gate metal layer, and a second interlayer dielectric layer in the display area are sequentially prepared in the display area of the display panel, and the organic photoresist is prepared in the bending area of the display panel Floor;

The preparing an interlayer dielectric layer in the bending zone on the organic photoresist layer includes:

A first interlayer dielectric layer is prepared on the surface of the second interlayer dielectric layer in the display area and the organic photoresist layer, wherein the first interlayer dielectric layer includes the first interlayer dielectric in the display area of the display area The first interlayer dielectric layer of the display area is close to the second interlayer dielectric layer of the display area and the interlayer dielectric layer of the bending area The surface of one side close to the organic photoresist layer is flush.

Where the first preset temperature is lower than the second preset temperature,

The step of sequentially preparing a gate insulating layer in a display area, a gate metal layer, and a second interlayer dielectric layer in the display area in the display area of the display panel includes:

Preparing a second interlayer dielectric layer in the display area at the second preset temperature;

The preparing a first interlayer dielectric layer on the surface of the second interlayer dielectric layer in the display area and the organic photoresist layer includes:

The first interlayer dielectric layer is prepared at the first preset temperature.

Beneficial effect

Beneficial effect: The beneficial effect of the present application is: different from the prior art, the present application provides a display panel including a display area and a bending area located outside the display area, and the display panel includes a source/drain metal layer In the bending area, the display panel includes an organic photoresist layer, and the side of the organic photoresist layer close to the source/drain metal layer is provided with an interlayer dielectric layer in the bending area. In this application, an interlayer dielectric layer in the bending zone is arranged between the source/drain metal layer and the organic photoresist layer, which can reduce the loss of the organic photoresist layer during the dry etching process of the source/drain traces, thereby avoiding The source/drain trace is broken.

Description of the drawings

In order to more clearly describe the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings needed in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

FIG. 1 is a schematic structural diagram of an embodiment of a display panel provided by an embodiment of the present application;

2 is a schematic structural diagram of another embodiment of a display panel provided by an embodiment of the present application;

FIG. 3 is a schematic flowchart of an embodiment of a method for manufacturing a display panel provided by an embodiment of the present application;

4 is a schematic diagram of the structure of the display panel before S31 in FIG. 3;

5 is a schematic diagram of the structure of the display panel at S31 in FIG. 3;

6 is a schematic diagram of the structure of the display panel in S32 in FIG. 3;

7 is a schematic diagram of the structure of the display panel when the contact holes are prepared before S33 in FIG. 3;

8 is a schematic diagram of the structure of the display panel at S33 in FIG. 3;

9 is a schematic diagram of the structure of the display panel after S33 in FIG. 3;

FIG. 10 is a schematic structural diagram of a display panel prepared by the method of manufacturing the display panel in FIG. 3.

Embodiments of the invention

The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative work are within the protection scope of this application.

In the description of this application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " The orientation or positional relationship indicated by “rear”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inner”, and “outer” are based on the orientation shown in the drawings The or positional relationship is only for the convenience of describing the application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the application. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more features. In the description of this application, "multiple" means two or more than two, unless otherwise specifically defined.

In this application, the word "exemplary" is used to mean "serving as an example, illustration, or illustration." Any embodiment described as "exemplary" in this application is not necessarily construed as being more preferred or advantageous over other embodiments. In order to enable any person skilled in the art to implement and use this application, the following description is given. In the following description, the details are listed for the purpose of explanation. It should be understood that those of ordinary skill in the art can realize that this application can also be implemented without using these specific details. In other instances, well-known structures and processes will not be elaborated in detail, so as to avoid unnecessary details from obscuring the description of the application. Therefore, the present application is not intended to be limited to the illustrated embodiments, but is consistent with the widest scope that conforms to the principles and features disclosed in the present application.

An embodiment of the application provides a display panel. The display panel includes a display area and a bending area located outside the display area. The display panel includes a source/drain metal layer. In the bending area, the display panel includes an organic photoresist layer. The side of the organic photoresist layer close to the source/drain metal layer is provided with an interlayer dielectric layer in the bending area. The display panel of the embodiment of the present application can be applied to various display devices. The detailed description is given below.

Please refer to FIG. 1. FIG. 1 is a schematic structural diagram of an embodiment of a display panel provided by an embodiment of the present application.

In this embodiment, the display panel 10 includes a display area 11 and a bending area 12 located outside the display area 11. The display panel 10 includes a source/drain metal layer 140. In the bending area 12, the display panel 10 includes an organic photoresist layer 121, and the side of the organic photoresist layer 121 close to the source/drain metal layer 140 is provided with a bending area interlayer dielectric layer 132.

In this embodiment, the organic photoresist layer 121 is filled with organic photoresist, and the material of the interlayer dielectric layer 132 in the bending area is silicon nitride, silicon oxide or a combination of both. In other embodiments, the materials of the organic photoresist layer 121 and the interlayer dielectric layer 132 in the bending zone can be selected according to specific conditions, which is not limited in this application. The organic photoresist layer 121 is provided in the bending area 12 of the display panel 10 to improve the bending resistance of the display panel 10. The interlayer dielectric layer 132 in the bending zone is arranged between the source/drain metal layer 140 and the organic photoresist layer 121, which can reduce the loss of the organic photoresist layer 121 during the dry etching process of the source/drain wiring. This prevents the source/drain traces from breaking.

Different from the prior art, the present application provides a display panel. The display panel includes a display area and a bending area located outside the display area. The display panel includes a source/drain metal layer. In the bending area, the display panel includes The organic photoresist layer is provided with an interlayer dielectric layer in the bending area on one side of the organic photoresist layer close to the source/drain metal layer. In this application, an interlayer dielectric layer in the bending zone is arranged between the source/drain metal layer and the organic photoresist layer, which can reduce the loss of the organic photoresist layer during the dry etching process of the source/drain traces, thereby avoiding The source/drain trace is broken.

In order to specifically describe the structure of the display panel of the present application, please refer to FIG. 2. FIG. 2 is a schematic structural diagram of another embodiment of a display panel provided by an embodiment of the present application.

In this embodiment, the display panel 20 includes a display area 21 and a bending area 22 located outside the display area 21. The display panel 20 includes a source/drain metal layer 240. In the bending area 22, the display panel 20 includes an organic photoresist layer 221. The side of the organic photoresist layer 221 close to the source/drain metal layer 240 is provided with a bending Fold area interlayer dielectric layer 232.

In this embodiment, the source/drain metal layer 240 includes source/drain metal lines 241 arranged at intervals in a direction parallel to the surface of the display panel 20. In the bending area 22, the bending area interlayer dielectric layer 232 is located in the projection area of the source/drain metal lines 241, and the thickness of the bending area interlayer dielectric layer 232 is a first preset value. Wherein, the first preset value may be any value greater than 0, for example, the first preset value is greater than 0 and not more than 200 nanometers, and it can be set according to specific conditions. Preferably, the first preset value is greater than the loss thickness of the interlayer dielectric layer 232 in the bending region when the source/drain metal wires 241 are prepared. The first preset value is greater than the loss thickness of the interlayer dielectric layer 232 in the bending area when the source/drain metal line 241 is prepared. After the source/drain metal line 241 is prepared, the interlayer dielectric layer 232 in the bending area still remains A certain thickness can avoid the loss of the organic photoresist layer 221 when the source/drain metal lines 241 are prepared. In addition, by controlling the size of the first preset value, the loss thickness of the organic photoresist layer 221 can be controlled, and the bending resistance performance of the source/drain metal line 241 can be improved.

In this embodiment, in the display area 21, on the side of the source/drain metal layer 240 close to the organic photoresist layer 221, a first interlayer dielectric layer 231 in the display area and a second interlayer dielectric layer in the display area are sequentially arranged. 214, a gate metal layer 205, and a gate insulating layer 203 in the display area. The surface of the first interlayer dielectric layer 231 in the display area away from the source/drain metal layer 240 and the surface of the interlayer dielectric layer 232 in the bending area away from the source/drain metal layer 240 are flush. Specifically, the first interlayer dielectric layer 230 is prepared through a single process. The first interlayer dielectric layer 230 includes the first interlayer dielectric layer 231 in the display area and the interlayer dielectric layer 232 in the bending area. The first interlayer dielectric layer 231 in the display area and the interlayer dielectric layer 232 in the bending area are prepared by one process, which reduces the process complexity and improves the manufacturing efficiency.

Further, a source layer 204, a buffer layer 202, and a substrate 201 are sequentially provided on the side of the gate insulating layer 203 in the display area away from the gate metal layer 205.

Further, in the projection area of the source/drain metal line 241, the thickness of the first interlayer dielectric layer 231 in the display area is a first preset value. Between the projection areas of the source/drain metal lines 241, the thickness of the first interlayer dielectric layer 231 in the display area is a second preset value, where the first preset value is greater than the second preset value.

In this embodiment, the first interlayer dielectric layer 231 in the display area and the interlayer dielectric layer 232 in the bending area form a film at a first preset temperature, and the second interlayer dielectric layer 214 in the display area is at a second preset temperature. The film layer is formed, and the first preset temperature is lower than the second preset temperature. That is, the first interlayer dielectric layer 231 in the display area and the interlayer dielectric layer 232 in the bending area are formed at low temperature, the second interlayer dielectric layer 214 in the display area is formed at high temperature, and the first interlayer dielectric layer 231 and The low-temperature film formation of the interlayer dielectric layer 232 in the bending region can prevent damage to the organic photoresist layer 221 caused by high temperature.

Please refer to FIGS. 3-10. FIG. 3 is a schematic flowchart of an embodiment of a method for manufacturing a display panel provided by an embodiment of the present application; FIG. 4 is a schematic diagram of the structure of the display panel before S31 in FIG. 3; FIG. 5 is S31 in FIG. Fig. 6 is a schematic diagram of the structure of the display panel at the time of S32 in Fig. 3; Fig. 7 is a schematic diagram of the structure of the display panel when the contact hole 243 is prepared before S33 in Fig. 3; Fig. 8 is the display panel at the time of S33 in Fig. 3 9 is a schematic diagram of the structure of the display panel when the passivation layer is prepared after S33 in FIG. 3; FIG. 10 is a schematic diagram of the structure of the display panel prepared by the method of manufacturing the display panel in FIG. 3. The display panel is the aforementioned display panel 20. With reference to Figures 3-10, the manufacturing method of the display panel specifically includes the following processes:

S31: preparing an organic photoresist layer in the bending area of the display panel.

As shown in FIG. 4, in this embodiment, a substrate 201 is first prepared, and a buffer layer 252 and an active layer 204 are sequentially prepared on the substrate 201. The buffer layer 202 is used to prevent impurities in the substrate 201 from diffusing into the devices of the display panel. The substrate 201 may be a glass substrate or a plastic substrate. Preferably, the substrate 201 is a flexible substrate. The material of the substrate 201 may be PI (Polyimide, polyimide), PET (polyethylene terephthalate, polyethylene terephthalate), etc., which is not limited in this application.

Further, on the side of the active layer 204 away from the buffer layer 252, a gate insulating layer 253 and a gate metal layer 205 are sequentially prepared. In a specific embodiment, the gate metal layer 205 includes a first gate metal layer and a second gate metal layer, and the gate insulating layer 253 includes a first gate insulating layer and a second gate insulating layer. First, a first gate insulating layer is prepared on the active layer 204, and a first gate metal layer is prepared on the first gate insulating layer. Afterwards, the active layer 204 is ion implanted using the first gate insulating layer as a mask. After ion implantation, a second gate insulating layer and a second gate metal layer are sequentially prepared on the first gate metal layer. A capacitor is formed between the first gate metal layer and the second gate metal layer.

Further, a second interlayer dielectric layer 264 is prepared on the gate metal layer 205, and the material of the second interlayer dielectric layer 264 is silicon nitride, silicon oxide, or a combination of both. In other embodiments, the material of the second interlayer dielectric layer 264 can be selected according to specific conditions, which is not limited in this application.

As shown in FIG. 5, in this embodiment, the buffer layer 252, the gate insulating layer 253, and the second interlayer dielectric layer 264 are etched away in the bending region 22 through a photomask to form an organic photoresist trench groove. The organic photoresist trench is filled with an organic photoresist to form an organic photoresist layer 221. The buffer layer 252, the gate insulating layer 253, and the second interlayer dielectric layer 264 remain in the display area 21, which are the display area buffer layer 202, the display area gate insulating layer 203, and the display area second interlayer dielectric layer 214.

In other embodiments, the display area buffer layer 202, the active layer 204, the display area gate insulating layer 203, the gate metal layer 205, and the display area second interlayer dielectric layer 214 can also be directly prepared in the display area 21. , And then directly prepare the organic photoresist layer 221 in the bending area 22, which is not limited in this application.

S32: preparing an interlayer dielectric layer in the bending area on the organic photoresist layer.

As shown in FIG. 6, in this embodiment, a first interlayer dielectric layer 230 is prepared on the surfaces of the second interlayer dielectric layer 214 and the organic photoresist layer 221 in the display area. The first interlayer dielectric layer 230 includes a first interlayer dielectric layer 231 in the display area of the display area 21 and a bending area interlayer dielectric layer 232 in the bending area 22. The surface of the first interlayer dielectric layer 231 in the display area near the second interlayer dielectric layer 214 in the display area is flush with the surface of the interlayer dielectric layer 232 in the bending area near the organic photoresist layer 221. That is, the first interlayer dielectric layer 231 in the display area and the interlayer dielectric layer 232 in the bending area are prepared through one process. In other embodiments, the first interlayer dielectric layer 231 in the display area and the interlayer dielectric layer 232 in the bending area may also be separately prepared, which is not limited in this application.

In this embodiment, a first interlayer dielectric layer 230 with a thickness of a first preset value is prepared on the surfaces of the second interlayer dielectric layer 214 and the organic photoresist layer 221 in the display area. In other embodiments, the interlayer dielectric layer 232 in the bending zone with a thickness of the first preset value may be formed only on the organic photoresist layer 221. Wherein, the first preset value may be any value greater than 0, for example, the first preset value is greater than 0 and not more than 200 nanometers, and it can be set according to specific conditions. Preferably, the first preset value is greater than the loss thickness of the interlayer dielectric layer 232 in the bending region when the source/drain metal wires 241 are prepared. In other embodiments, if the first interlayer dielectric layer 231 in the display area and the interlayer dielectric layer 232 in the bending area are prepared separately, the thickness of the first interlayer dielectric layer 231 in the display area and the interlayer dielectric layer 232 in the bending area may be different. That is, the first interlayer dielectric layer 231 in the display area may not be the first preset value, and it may be set according to specific conditions. The first preset value is greater than the loss thickness of the interlayer dielectric layer 232 in the bending area when the source/drain metal lines 241 are prepared. After the source/drain metal lines 241 are prepared, the interlayer dielectric layer 232 in the bending area remains Retaining a certain thickness can avoid the loss of the organic photoresist layer 221 when the source/drain metal lines 241 are prepared. In addition, by controlling the size of the first preset value, the loss thickness of the organic photoresist can be controlled, and the bending resistance of the source/drain metal lines 241 can be improved.

Further, the second interlayer dielectric layer 214 in the display area is prepared at the second preset temperature, and the first interlayer dielectric layer 230 is prepared at the first preset temperature. That is, the first interlayer dielectric layer 231 in the display area and the interlayer dielectric layer 232 in the bending area are formed at low temperature, the second interlayer dielectric layer 214 in the display area is formed at high temperature, and the first interlayer dielectric layer 231 and The low-temperature film formation of the interlayer dielectric layer 232 in the bending region can prevent damage to the organic photoresist layer 221 caused by high temperature.

S33: Prepare a source/drain metal layer on the interlayer dielectric layer in the bending zone, wherein the interlayer dielectric layer in the bending zone is used to reduce the loss of the organic photoresist layer when preparing the source/drain metal layer the amount.

As shown in FIG. 7, before preparing the source/drain metal layer 240, a contact hole 243 is prepared in the display area 21, and the contact hole 243 sequentially penetrates the first interlayer dielectric layer 231 in the display area and the second interlayer dielectric layer in the display area. 214 and the gate insulating layer 203 in the display area, so that the active layer 204 is exposed, and can be connected to the source/drain metal line 241.

As shown in FIG. 8, in this embodiment, the dry etching process is used to prepare source/drain metal lines 241 arranged at intervals in a direction parallel to the surface of the display panel 20. The thicknesses of the first interlayer dielectric layer 231 in the display area and the interlayer dielectric layer 232 in the bending area located between the projection areas of the source/drain metal lines 241 are etched to a second preset value. Wherein, the second preset value is greater than 0 and less than the first preset value. Preferably, the difference between the first preset value and the second preset value is not less than the loss thickness of the interlayer dielectric layer in the bending area when the source/drain metal line 241 is prepared. In other embodiments, the source/drain metal lines 241 can also be prepared by a wet etching process, or only the thickness of the interlayer dielectric layer 232 in the bending region can be etched to the second preset value. Not limited. Since the interlayer dielectric layer 232 in the bending zone with the second preset thickness is retained, the organic photoresist layer 221 will not be lost when the source/drain metal lines 241 are prepared.

As shown in FIG. 9, further, a passivation layer 206 is prepared. Specifically, a passivation layer hole 2061 is prepared in the portion of the passivation layer 206 in the display area 21, and the first interlayer dielectric layer 231 of the display area is reserved; the source/drain metal line 241 is used as a mask to passivate The portion of the layer 206 located in the bending area 22 is completely etched away. While the portion of the passivation layer 206 located in the bending area 22 is completely etched away, the bending between the projection areas of the source/drain metal lines 241 is The interlayer dielectric layer 232 is etched away. The interlayer dielectric layer 232 in the bending area between the projection areas of the source/drain metal lines 241 is etched away. The interlayer dielectric layer 232 in the bending area is not a whole, which can increase the bending area 22 of the display panel 20 The bending performance.

As shown in FIG. 10, further, after the passivation layer 206 is prepared, a planarization layer 207, an anode layer 208, a pixel definition layer 209, and a support (not shown) are sequentially prepared.

Different from the prior art, the present application provides a method for preparing a display panel. The display panel includes a display area and a bending area located outside the display area. The method for preparing the display panel includes: preparing organic materials in the bending area of the display panel. Photoresist layer; prepare the bending zone interlayer dielectric layer on the organic photoresist layer; prepare the source/drain metal layer on the bending zone interlayer dielectric layer, wherein the bending zone interlayer dielectric layer is used in the preparation When the source/drain metal layer is used, the loss of the organic photoresist layer is reduced. In this application, an interlayer dielectric layer in the bending zone is arranged between the source/drain metal layer and the organic photoresist layer, which can reduce the loss of the organic photoresist layer during the dry etching process of the source/drain traces, thereby avoiding The source/drain trace is broken.

It should be noted that only the foregoing structure is described in the foregoing display panel embodiment. It is understood that, in addition to the foregoing structure, the display panel of the embodiment of the present application may also include any other necessary structures as required. Not limited.

During specific implementation, each of the above units or structures can be implemented as independent entities, or can be combined arbitrarily, and implemented as the same or several entities. For the specific implementation of each of the above units or structures, please refer to the previous method embodiments. No longer.

The above is a detailed introduction to a display panel and a preparation method provided by the embodiments of the present application. Specific examples are used to illustrate the principles and embodiments of the present application. The description of the above embodiments is only used to help understand the present application. The application method and its core idea; meanwhile, for those skilled in the art, according to the idea of this application, there will be changes in the specific embodiments and application scope. In summary, the content of this specification should not be construed as a reference to this application. limits.

Claims

A display panel, wherein the display panel includes a display area and a bending area located outside the display area, the display panel includes a source/drain metal layer,

In the bending area, the display panel includes an organic photoresist layer, and a bending area interlayer dielectric layer is provided on a side of the organic photoresist layer close to the source/drain metal layer.
The display panel of claim 1, wherein the source/drain metal layer comprises source/drain metal lines arranged at intervals in a direction parallel to the surface of the display panel;

In the bending region, the interlayer dielectric layer in the bending region is located in the projection area of the source/drain metal line, and the thickness of the interlayer dielectric layer in the bending region is a first preset value .
2. The display panel of claim 2, wherein, in the display area, the source/drain metal layer is close to the organic photoresist layer, and a first interlayer dielectric layer in the display area is sequentially arranged 1. The second interlayer dielectric layer in the display area, the gate metal layer and the gate insulating layer in the display area;

The surface of the first interlayer dielectric layer of the display area away from the source/drain metal layer and the surface of the bending area interlayer dielectric layer away from the source/drain metal layer are flush .
3. The display panel of claim 3, wherein, in the projection area of the source/drain metal lines, the thickness of the first interlayer dielectric layer in the display area is the first preset value;

Between the projection areas of the source/drain metal lines, the thickness of the first interlayer dielectric layer in the display area is a second preset value, wherein the first preset value is greater than the second preset value. Set value.
The display panel according to claim 3, wherein the first interlayer dielectric layer in the display area and the interlayer dielectric layer in the bending area form a film at a first preset temperature, and the second layer in the display area The intermediate dielectric layer forms a film layer at a second preset temperature, and the first preset temperature is lower than the second preset temperature.
The display panel of claim 4, wherein the first interlayer dielectric layer in the display area and the interlayer dielectric layer in the bending area form a film at a first preset temperature, and the second layer in the display area The intermediate dielectric layer forms a film layer at a second preset temperature, and the first preset temperature is lower than the second preset temperature.
3. The display panel of claim 2, wherein the first preset value is greater than 0 and does not exceed 200 nanometers.
The display panel according to claim 1, wherein the organic photoresist layer is filled with organic photoresist, and the material of the interlayer dielectric layer in the bending zone is silicon nitride, silicon oxide or a combination of both .
A display device, wherein the display device includes a display panel, the display panel includes a display area and a bending area located outside the display area, and the display panel includes a source/drain metal layer,

In the bending area, the display panel includes an organic photoresist layer, and a bending area interlayer dielectric layer is provided on a side of the organic photoresist layer close to the source/drain metal layer.
9. The display device according to claim 9, wherein the source/drain metal layer comprises source/drain metal lines arranged at intervals in a direction parallel to the surface of the display panel;

In the bending region, the interlayer dielectric layer in the bending region is located in the projection area of the source/drain metal line, and the thickness of the interlayer dielectric layer in the bending region is a first preset value .
10. The display device according to claim 10, wherein, in the display area, the source/drain metal layer is close to the organic photoresist layer, and a first interlayer dielectric layer in the display area is sequentially arranged 1. The second interlayer dielectric layer in the display area, the gate metal layer, and the gate insulating layer in the display area;

The surface of the first interlayer dielectric layer of the display area away from the source/drain metal layer and the surface of the bending area interlayer dielectric layer away from the source/drain metal layer are flush .
11. The display device according to claim 11, wherein, in the projection area of the source/drain metal lines, the thickness of the first interlayer dielectric layer in the display area is the first preset value;

Between the projection areas of the source/drain metal lines, the thickness of the first interlayer dielectric layer in the display area is a second preset value, wherein the first preset value is greater than the second preset value. Set value.
11. The display device of claim 11, wherein the first interlayer dielectric layer in the display area and the interlayer dielectric layer in the bending area form a film at a first preset temperature, and the second layer in the display area The intermediate dielectric layer forms a film layer at a second preset temperature, and the first preset temperature is lower than the second preset temperature.
The display device of claim 12, wherein the first interlayer dielectric layer in the display area and the interlayer dielectric layer in the bending area form a film at a first preset temperature, and the second layer in the display area The intermediate dielectric layer forms a film layer at a second preset temperature, and the first preset temperature is lower than the second preset temperature.
11. The display device of claim 10, wherein the first preset value is greater than 0 and does not exceed 200 nanometers.
9. The display device according to claim 9, wherein the organic photoresist layer is filled with organic photoresist, and the material of the interlayer dielectric layer in the bending zone is silicon nitride, silicon oxide or a combination of both .
A method for manufacturing a display panel, wherein the display panel includes a display area and a bending area located outside the display area, and the manufacturing method includes:

Preparing an organic photoresist layer in the bending area of the display panel;

Preparing an interlayer dielectric layer in the bending area on the organic photoresist layer;

A source/drain metal layer is prepared on the interlayer dielectric layer in the bending zone, wherein the interlayer dielectric layer in the bending zone is used to reduce the The loss of organic photoresist layer.
The preparation method according to claim 17, wherein:

The preparing an interlayer dielectric layer in the bending zone on the organic photoresist layer includes:

Preparing the interlayer dielectric layer in the bending zone with a thickness of a first preset value on the organic photoresist layer;

The preparing a source/drain metal layer on the interlayer dielectric layer in the bending region includes:

Prepared by a dry etching process to prepare source/drain metal lines arranged at intervals in a direction parallel to the surface of the display panel, and place all the source/drain metal lines between the projection areas of the source/drain metal lines. The thickness of the interlayer dielectric layer in the bending zone is etched to a second preset value.
18. The manufacturing method of claim 17, wherein the preparing an organic photoresist layer in the bending area of the display panel comprises:

A gate insulating layer in a display area, a gate metal layer, and a second interlayer dielectric layer in the display area are sequentially prepared in the display area of the display panel, and the organic photoresist is prepared in the bending area of the display panel Floor;

The preparing an interlayer dielectric layer in the bending zone on the organic photoresist layer includes:

A first interlayer dielectric layer is prepared on the surface of the second interlayer dielectric layer in the display area and the organic photoresist layer, wherein the first interlayer dielectric layer includes the first interlayer dielectric in the display area of the display area The first interlayer dielectric layer of the display area is close to the second interlayer dielectric layer of the display area and the interlayer dielectric layer of the bending area The surface of one side close to the organic photoresist layer is flush.
The preparation method according to claim 19, wherein the first preset temperature is lower than the second preset temperature,

The step of sequentially preparing a gate insulating layer in a display area, a gate metal layer, and a second interlayer dielectric layer in the display area in the display area of the display panel includes:

Preparing a second interlayer dielectric layer in the display area at the second preset temperature;

The preparing a first interlayer dielectric layer on the surface of the second interlayer dielectric layer in the display area and the organic photoresist layer includes:

The first interlayer dielectric layer is prepared at the first preset temperature.