WO2019127680A1 - Carbon nanotubes purification method, thin film transitor and thin film transitor preparation method - Google Patents
Carbon nanotubes purification method, thin film transitor and thin film transitor preparation method Download PDFInfo
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- WO2019127680A1 WO2019127680A1 PCT/CN2018/072701 CN2018072701W WO2019127680A1 WO 2019127680 A1 WO2019127680 A1 WO 2019127680A1 CN 2018072701 W CN2018072701 W CN 2018072701W WO 2019127680 A1 WO2019127680 A1 WO 2019127680A1
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H10K85/221—Carbon nanotubes
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- the present invention relates to the field of display manufacturing technology, and in particular, to a carbon nanotube purification method, a thin film transistor, and a preparation method.
- Carbon Nanotube Thin Film Transitor (CNT-TFT) has attracted the attention of many researchers in the display field due to its high mobility, high transparency and high elasticity.
- CNT-TFTs are all prepared from network-like carbon nanotube films.
- single-walled carbon nanotubes SWCNTs, Single-Walled Carbon Nanotubes
- m-SWCNTs metallic single-walled carbon nanotubes
- sc-SWCNT Semiconductor Single-Walled Carbon Nanotube
- m-SWCNT is used to prepare nano-scale electrodes
- sc-SWCNT is a high mobility and switching ratio conductive channel, and the band gap of different diameter sc-SWCNTs will be different, and the band gap distribution will be different. This will result in a greatly reduced conductivity of the prepared CNT-TFT.
- the invention also provides a carbon nano thin film transistor and a preparation method thereof.
- the method for purifying carbon nanotubes according to the present invention comprises:
- Single-walled carbon nanotubes mixed with metallic single-walled carbon nanotubes and semi-conducting single-walled carbon nanotubes are added to an organic solvent containing a small molecule compound, and ultrasonically dispersed to obtain a carbon nanotube suspension;
- the carbon nanotube suspension was subjected to centrifugation to remove deposits of the carbon nanotube suspension to obtain a semiconducting single-walled carbon nanotube supernatant.
- single-walled carbon nanotubes mixed with metallic single-walled carbon nanotubes and semi-conducting single-walled carbon nanotubes are added to an organic solvent containing a small molecule compound, and ultrasonically dispersed to obtain a suspension of carbon nanotubes.
- ultrasonic dispersion was carried out under ice water bath conditions.
- the method for purifying the carbon nanotubes comprises:
- the carbon nanotubes prepared by the arc method are dissolved in a toluene solution containing a small molecule compound, and ultrasonically dispersed in an ice water bath for 20 min to 40 min to obtain a carbon nanotube suspension, wherein the mass ratio of the carbon nanotubes to the small molecule compound is obtained. 1 to 3;
- the carbon nanotube suspension was centrifuged at a high speed of 20 kg to 30 kg for 20 min to 40 min, and the deposit of the carbon nanotube suspension was removed to obtain a semiconducting single-walled carbon nanotube supernatant.
- the small molecule compound comprises 1,4-bis(indol-9-methylthio)-p-xylene, 1-(indol-1-methoxy)-4-(indol-1-methoxy) -p-xylene, 1-(indol-1-methylthio)-4-(indol-1-methylthio)-p-xylene, 1-(benzoxan-1-methoxy)-4-( Benzopyrene-1-methoxy)-p-xylene.
- the method for preparing a thin film transistor of the present invention comprises:
- a top gate insulating layer, a top gate, and a passivation layer are sequentially formed on the source and the drain.
- the substrate is immersed and rinsed with an organic solution, and dried at 50 ° C to 100 ° C.
- the active layer is formed by pulling deposition.
- the process of forming an active layer on the bottom gate insulating layer with the semiconducting single-walled carbon nanotube supernatant is performed in an atmosphere filled with a shielding gas.
- the thin film transistor of the present invention comprises:
- top gate insulating layer a top gate insulating layer, a top gate, and a passivation layer covering the source and the drain;
- the present invention adopts the semiconducting carbon nanotube obtained by the single-walled carbon nanotube purification method of the present invention, and the semi-band gap distribution of the semiconducting carbon nanotube obtained by the purification is narrow, and the high-purity semiconducting carbon nanotube is used as an active source.
- Layer preparation results in a carbon nano-thin film transistor with high performance field effect.
- FIG. 1 is a flow chart of a method for purifying single-walled carbon nanotubes according to the present invention.
- FIG. 2 is a flow chart showing a method of fabricating the thin film transistor of the present invention.
- FIG 3 is a view showing a structure of a film layer of a thin film transistor according to the present invention.
- the present invention provides a method for purifying a semiconducting single-walled carbon nanotube, comprising:
- a single-walled carbon nanotube in which a single-walled carbon nanotube and a semi-walled carbon nanotube are mixed with metal is added to an organic solvent containing a small molecule compound, and ultrasonically dispersed to obtain a carbon nanotube suspension.
- the single-walled carbon nanotubes may be prepared by a laser evaporation method, an arc discharge method, or a chemical vapor deposition method, and the single-walled carbon nanotubes include metallic single-walled carbon nanotubes and semiconductor properties.
- the semiconducting carbon nanotubes are encapsulated by small molecular compounds which are dissolved in an organic solvent, wherein the small molecular compound has the general formula of a polycyclic aromatic hydrocarbon-benzene ring-fused aromatic hydrocarbon (PAH-B-PAH, Polycyclic Aromatic Hydrocarbon- Benzene-Polycyclic Aromatic Hydrocarbon), whose chemical structure is as follows:
- the fused ring aromatic hydrocarbon (PAN), that is, R1 and R2 in the above structural formula includes, but is not limited to, a fused ring within five benzene rings such as ruthenium, osmium, benzofluorene, naphthalene, butyl, phenanthrene and naphthene.
- An aromatic hydrocarbon, the chemical structural formula of the fused aromatic hydrocarbon is as follows:
- the PAH-B-PAH includes, but is not limited to, 1,4-bis(indol-9-methylthio)-p-xylene, 1-(indol-1-methoxy)-4-(anthracene- 1-methoxy)-p-xylene, 1-(indol-1-methylthio)-4-(indol-1-methylthio)-p-xylene, 1-(benzoxan-1-methoxy
- the specific chemical structural formula of the small molecule compound is as follows: 4-(benzoxan-1-methoxy)-p-xylene:
- Organic solvents that can dissolve small molecule compounds include, but are not limited to, toluene solutions.
- Ultrasonic dispersion of an organic solvent of a mixed oil single-walled carbon nanotube and a small molecule compound in an ice water bath condition can effectively prevent the organic solvent from volatilizing a large amount during the ultrasonic process, when the small molecule compound and the single-walled carbon After the nanotubes are ultrasonically dispersed and incubated in the organic solvent, the small molecule compound is selectively encapsulated with the semiconducting single-walled carbon nanotubes to make the semiconducting single-walled carbon nanotubes in the organic solvent. The solubility and dispersibility are enhanced.
- the carbon nanotubes prepared by the arc method are dissolved in a toluene solution containing a small molecule compound, and ultrasonically dispersed in an ice water bath for 20 min to 40 min to obtain a carbon nanotube suspension, a carbon nanotube and a small carbon nanotube.
- the mass ratio of the molecular compound is 1-3.
- the carbon nanotubes prepared by the 4 mg arc method are dissolved in 20 ml of a toluene solution containing 2 mg of a small molecule compound, and ultrasonically dispersed for 30 minutes in an ice water bath to obtain a carbon nanotube suspension. .
- the carbon nanotube suspension is subjected to centrifugation to remove deposits of the carbon nanotube suspension to obtain a semiconducting single-walled carbon nanotube supernatant.
- metallic single-walled carbon nanotubes and amorphous carbides are precipitated at the bottom of the solution, and the semiconducting single-walled carbon nanotubes are small.
- the molecular compound is encapsulated and dissolved in an organic solvent, so that the separation of the metallic single-walled carbon nanotubes and the semiconducting single-walled carbon nanotubes can be achieved by separating the supernatant and the bottom precipitate.
- the supernatant can be taken out from the centrifuge tube to remove the metallic single-walled carbon nanotubes and amorphous carbon impurities in the bottom solution, thereby obtaining a high content of semiconducting single-walled carbon nanotubes for constructing the carbon nanotube film.
- Transistor In this embodiment, the carbon nanotube suspension is centrifuged at a high speed of 20 kg to 30 kg for 20 min to 40 min, and then the supernatant is taken out from the centrifuge tube by a syringe to remove the metallic single-walled carbon nanotubes at the bottom of the centrifuge tube. Amorphous carbon impurities provide a high content of semiconducting single-walled carbon nanotube solution.
- the present invention also provides a method for fabricating a thin film transistor, comprising:
- the substrate includes, but is not limited to, a quartz substrate, a glass substrate, or a flexible plastic substrate.
- the substrate is a glass substrate, and a Mo film is first sputtered on the glass substrate by physical vapor deposition, then a Cu film is formed by sputtering to form a first metal film, and then a photolithographic process is used to form a Mo/Cu bottom gate.
- a 200 nm thick SiO 2 is covered as a bottom gate insulating layer by plasma enhanced chemical deposition, and then the impurities are washed away with acetone, methanol and isopropanol, and baked at 50 ° C to 100 ° C. dry.
- the material of the bottom gate includes and is not limited to one or more conductive materials such as Al, Ag, Cu, Mo or Ti
- the material of the bottom gate insulating layer includes and is not limited to SiO 2 , Al 2 O 3 . , SiN x , HfO 2 or ionic gel materials.
- the method of forming the bottom gate and the gate insulating layer includes, but is not limited to, a deposition method such as Plasma Enhanced Chemical Vapor Deposition (PECVD).
- PECVD Plasma Enhanced Chemical Vapor Deposition
- the single-walled nanotube supernatant is prepared by the above-mentioned method for purifying the semi-conducting single-walled carbon nanotubes, and the substrate prepared in S201 is immersed in the semiconductor in a glove box filled with a protective gas.
- a uniform carbon nanotube active layer is formed by multiple lift deposition techniques, and the carbon nanotube channel is etched by photolithography and oxygen plasma and placed in the electron. In the beam evaporation machine.
- S203 a source and a drain are respectively formed at opposite ends of the active layer.
- a layer of Mo film is first plated on the bottom gate insulating layer by electron evaporation, followed by vapor deposition of a Cu film, and then vapor deposition of a layer of Mo film to form a three-layer film of Mo/Cu/Mo.
- the material of the source and drain includes, and is not limited to, one or more conductive materials such as Al, Ag, Cu, Mo or Ti.
- a top gate insulating layer, a top gate, and a passivation layer are sequentially formed on the source and the drain.
- a 300 nm thick SiO 2 film is covered by a chemical vapor deposition method as a top gate insulating layer on the sample prepared in the step S203; a Mo film is vapor-deposited under the action of the shadow mask, and then vapor deposition is performed. An upper Cu film is formed, and the Mo/Cu film layer forms a top gate; then SiO 2 is overlaid as a passivation layer by chemical vapor deposition.
- the method for forming the top gate insulating layer and the passivation layer comprises chemical vapor deposition or physical vapor deposition, and the thickness of formation of the top gate insulating layer is not specifically limited, and the technology capable of achieving the object of the present invention as understood by those skilled in the art is known.
- the material of the top gate insulating layer includes and is not limited to materials such as SiO 2 , Al 2 O 3 , SiN x , HfO 2 or ionic gel, and the material of the top gate includes and is not limited to Al, Ag, Cu, Mo. Or one or more conductive materials such as Ti, the material of the passivation layer includes and is not limited to materials such as SiO 2 , phosphosilicate glass, Si 3 N 4 or Al 2 O 3 .
- a contact hole is sequentially formed on the top gate insulating layer by coating a photoresist, exposing, etching, and photoresist removing to obtain a double gate carbon nano thin film transistor.
- a high-purity semiconducting carbon nanotube is used to prepare an active layer, and a high-performance field effect carbon nano-thin film transistor is prepared.
- the present invention also provides a thin film transistor 100 prepared by the above method for preparing a thin film transistor for preparing a display panel.
- the thin film transistor 100 includes a bottom gate electrode 20 and a bottom gate insulating layer 30 sequentially formed on a substrate 10; an active layer 40 formed on the bottom gate insulating layer 30; a source and a drain 50 at both ends of the active layer 40; a top gate insulating layer 60, a top gate 70, a passivation layer 80 covering the source and drain electrodes 50; and a contact hole 90.
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Abstract
Provided is a method for purifying carbon nanotubes. The method comprises the steps of: adding single-walled carbon nanotubes which comprise metallic single-walled carbon nanotubes and semiconducting single-walled carbon nanotubes into a small molecule compound-containing organic solvent, and performing ultrasonic dispersion to obtain carbon nanotube suspension; and performing centrifugation on the carbon nanotube suspension to remove sediment in the carbon nanotube suspension so as to obtain semiconducting single-walled nanotube supernatant. Also provided in the invention is a preparation method of a thin film transistor (100). The preparation method of the thin film transistor comprises the steps of: forming a bottom gate (20) and a bottom gate insulating layer (30) which covers the bottom gate (20) on a substrate (10); forming an active layer (40) on the bottom gate insulating layer (30) by using the semiconducting single-walled nanotube supernatant; forming a source electrode (50) and a drain electrode (50) at two opposite ends of the active layer (40) separately; and forming a top gate insulating layer (60), a top gate (70) and a passivation layer (80) sequentially on the source electrode (50) and drain electrode (50).
Description
本发明要求2017年12月27日递交的发明名称为“碳纳米管提纯方法、薄膜晶体管及制备方法”的申请号2017114447103的在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。The present invention claims the priority of the application entitled "Carbon Nanotube Purification Method, Thin Film Transistor, and Preparation Method", filed on December 27, 2017, which is incorporated herein by reference. In this article.
本发明涉及显示器制造技术领域，特别涉及一种碳纳米管提纯方法、薄膜晶体管及制备方法。The present invention relates to the field of display manufacturing technology, and in particular, to a carbon nanotube purification method, a thin film transistor, and a preparation method.
近年来，碳纳米薄膜晶体管(CNT-TFT，Carbon Nanotube Thin Film Transitor)因其高迁移率、高透明度以及高弹性的特点吸引了众多显示器领域研究人员的眼球。In recent years, Carbon Nanotube Thin Film Transitor (CNT-TFT) has attracted the attention of many researchers in the display field due to its high mobility, high transparency and high elasticity.
一般来说，CNT-TFT都是由网络状碳纳米管薄膜制备而来。其中，单壁碳纳米管(SWCNT，Single-Walled Carbon Nanotube)在合成过程中会有金属性单壁碳纳米管(m-SWCNT，metallic Single-Walled Carbon Nanotube)和半导体性单壁碳纳米管(sc-SWCNT，Semiconductor Single-Walled Carbon Nanotube)混杂。m-SWCNT用来制备纳米尺度的电极，而sc-SWCNT则是高迁移率和开关比的导电沟道，且不同直径的sc-SWCNT的带隙也会有所不同，带隙分布宽窄的不同会导致制备出来的CNT-TFT的导电性能会大大降低。In general, CNT-TFTs are all prepared from network-like carbon nanotube films. Among them, single-walled carbon nanotubes (SWCNTs, Single-Walled Carbon Nanotubes) have metallic single-walled carbon nanotubes (m-SWCNTs) and semiconducting single-walled carbon nanotubes (single-walled carbon nanotubes). sc-SWCNT, Semiconductor Single-Walled Carbon Nanotube). m-SWCNT is used to prepare nano-scale electrodes, while sc-SWCNT is a high mobility and switching ratio conductive channel, and the band gap of different diameter sc-SWCNTs will be different, and the band gap distribution will be different. This will result in a greatly reduced conductivity of the prepared CNT-TFT.
发明内容Summary of the invention
本发明的目的在于提供一种碳纳米管提纯方法，用于制备高性能场效应的碳纳米薄膜晶体管。It is an object of the present invention to provide a carbon nanotube purification method for preparing a high performance field effect carbon nano thin film transistor.
本发明还提供一种碳纳米薄膜晶体管及其制备方法。The invention also provides a carbon nano thin film transistor and a preparation method thereof.
本发明所述种碳纳米管的提纯方法，包括：The method for purifying carbon nanotubes according to the present invention comprises:
取混合有金属性的单壁碳纳米管和半导体性的单壁碳纳米管的单壁碳纳米管加入含有小分子化合物的有机溶剂中，超声分散，得到碳纳米管悬浊液；Single-walled carbon nanotubes mixed with metallic single-walled carbon nanotubes and semi-conducting single-walled carbon nanotubes are added to an organic solvent containing a small molecule compound, and ultrasonically dispersed to obtain a carbon nanotube suspension;
将所述碳纳米管悬浊液进行离心处理以去除碳纳米管悬浊液的沉积物，得到半导体性的单壁碳纳米管上清液。The carbon nanotube suspension was subjected to centrifugation to remove deposits of the carbon nanotube suspension to obtain a semiconducting single-walled carbon nanotube supernatant.
其中，在取混合有金属性的单壁碳纳米管和半导体性的单壁碳纳米管的单壁碳纳米管加入含有小分子化合物的有机溶剂中，超声分散，得到碳纳米管悬浊液的过程中，在冰水浴的条件下进行超声分散。Wherein, single-walled carbon nanotubes mixed with metallic single-walled carbon nanotubes and semi-conducting single-walled carbon nanotubes are added to an organic solvent containing a small molecule compound, and ultrasonically dispersed to obtain a suspension of carbon nanotubes. During the process, ultrasonic dispersion was carried out under ice water bath conditions.
其中，在将所述碳纳米管悬浊液进行离心处理以去除碳纳米管悬浊液的沉积物，得到半导体性的单壁碳纳米管上清液的过程中，在离心机中对所述碳纳米管悬浊液进行离心处理。Wherein the process of centrifuging the carbon nanotube suspension to remove deposits of the carbon nanotube suspension to obtain a semi-walled carbon nanotube supernatant is obtained in a centrifuge The carbon nanotube suspension was centrifuged.
其中，所述碳纳米管的提纯方法包括：Wherein the method for purifying the carbon nanotubes comprises:
取电弧法制备的碳纳米管溶于含有小分子化合物的甲苯溶液中，在冰水浴条件下，超声分散20min～40min，得到碳纳米管悬浊液，其中碳纳米管和小分子化合物的质量比为1～3；The carbon nanotubes prepared by the arc method are dissolved in a toluene solution containing a small molecule compound, and ultrasonically dispersed in an ice water bath for 20 min to 40 min to obtain a carbon nanotube suspension, wherein the mass ratio of the carbon nanotubes to the small molecule compound is obtained. 1 to 3;
将所述碳纳米管悬浊液在20kg～30kg的离心力下高速离心20min～40min，去除碳纳米管悬浊液的沉积物，得到半导体性的单壁碳纳米管上清液。The carbon nanotube suspension was centrifuged at a high speed of 20 kg to 30 kg for 20 min to 40 min, and the deposit of the carbon nanotube suspension was removed to obtain a semiconducting single-walled carbon nanotube supernatant.
其中，所述小分子化合物包括1，4-双(蒽-9-甲硫基)-对二甲苯、1-(芘-1-甲氧基)-4-(蒽-1-甲氧基)-对二甲苯、1-(芘-1-甲硫基)-4-(芘-1-甲硫基)-对二甲苯、1-(苯并芘-1-甲氧基)-4-(苯并芘-1-甲氧基)-对二甲苯。Wherein the small molecule compound comprises 1,4-bis(indol-9-methylthio)-p-xylene, 1-(indol-1-methoxy)-4-(indol-1-methoxy) -p-xylene, 1-(indol-1-methylthio)-4-(indol-1-methylthio)-p-xylene, 1-(benzoxan-1-methoxy)-4-( Benzopyrene-1-methoxy)-p-xylene.
本发明所述薄膜晶体管的制备方法，包括：The method for preparing a thin film transistor of the present invention comprises:
在基板上形成底栅极以及覆盖所述底栅极的底栅绝缘层；Forming a bottom gate on the substrate and a bottom gate insulating layer covering the bottom gate;
用半导体性的单壁碳纳米管上清液在所述底栅绝缘层上形成有源层；Forming an active layer on the bottom gate insulating layer with a semiconducting single-walled carbon nanotube supernatant;
在所述有源层的相对两端分别形成源极和漏极；Forming a source and a drain respectively at opposite ends of the active layer;
在所述源极和漏极上依次形成顶栅绝缘层、顶部栅极和钝化层。A top gate insulating layer, a top gate, and a passivation layer are sequentially formed on the source and the drain.
其中，在基板上形成底栅极以及覆盖所述底栅极的底栅绝缘层之后，用有机溶液浸泡冲洗所述基板，并在50℃～100℃下烘干。Wherein, after the bottom gate is formed on the substrate and the bottom gate insulating layer covering the bottom gate, the substrate is immersed and rinsed with an organic solution, and dried at 50 ° C to 100 ° C.
其中，在用半导体性的单壁碳纳米管上清液在所述底栅绝缘层上形成有源层的过程中，所述有源层通过提拉沉积的方式形成。Wherein, in the process of forming an active layer on the bottom gate insulating layer with a semiconducting single-walled carbon nanotube supernatant, the active layer is formed by pulling deposition.
其中，所述用半导体性的单壁碳纳米管上清液在所述底栅绝缘层上形成有源层的过程在充满保护气体的气氛中进行。Wherein, the process of forming an active layer on the bottom gate insulating layer with the semiconducting single-walled carbon nanotube supernatant is performed in an atmosphere filled with a shielding gas.
本发明所述薄膜晶体管，包括：The thin film transistor of the present invention comprises:
在基板上依次形成的底栅极和底栅绝缘层；a bottom gate and a bottom gate insulating layer sequentially formed on the substrate;
在所述底栅绝缘层上形成的有源层，所述有源层由权利要求1提纯的碳纳米管制成；An active layer formed on the bottom gate insulating layer, the active layer being made of the carbon nanotube purified according to claim 1;
位于所述有源层两端的源极和漏极；a source and a drain at both ends of the active layer;
覆盖所述源极和漏极的顶栅绝缘层、顶部栅极、钝化层；a top gate insulating layer, a top gate, and a passivation layer covering the source and the drain;
以及接触孔。And contact holes.
本发明采用了本发明所述单壁碳纳米管提纯方法得到了的半导体性碳纳米管，由于提纯得到的半导体性碳纳米管带隙分布窄，用高纯度的半导体性碳纳米管作为有源层制备得到了具有高性能场效应的碳纳米薄膜晶体管。The present invention adopts the semiconducting carbon nanotube obtained by the single-walled carbon nanotube purification method of the present invention, and the semi-band gap distribution of the semiconducting carbon nanotube obtained by the purification is narrow, and the high-purity semiconducting carbon nanotube is used as an active source. Layer preparation results in a carbon nano-thin film transistor with high performance field effect.
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below. Obviously, the drawings in the following description are only It is a certain embodiment of the present invention, and other drawings can be obtained from those skilled in the art without any creative work.
图1是本发明所述的单壁碳纳米管的提纯方法流程图。1 is a flow chart of a method for purifying single-walled carbon nanotubes according to the present invention.
图2是本发明所述的薄膜晶体管的制备方法流程图。2 is a flow chart showing a method of fabricating the thin film transistor of the present invention.
图3是本发明所述的薄膜晶体管的膜层结构图。3 is a view showing a structure of a film layer of a thin film transistor according to the present invention.
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The technical solutions in the embodiments of the present invention are clearly and completely described in the following with reference to the accompanying drawings in the embodiments of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, but not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.
请参阅图1，本发明提供一种半导体性单壁碳纳米管的提纯方法，包括：Referring to FIG. 1 , the present invention provides a method for purifying a semiconducting single-walled carbon nanotube, comprising:
S101，取混合有金属性的单壁碳纳米管和半导体性的单壁碳纳米管的单壁碳纳米管加入含有小分子化合物的有机溶剂中，超声分散，得到碳纳米管悬浊液。In S101, a single-walled carbon nanotube in which a single-walled carbon nanotube and a semi-walled carbon nanotube are mixed with metal is added to an organic solvent containing a small molecule compound, and ultrasonically dispersed to obtain a carbon nanotube suspension.
具体的，所述单壁碳纳米管可以是采用激光蒸发法、电弧放电法或化学气 相沉积等方法制备得到的，所述单壁碳纳米管中包括金属性的单壁碳纳米管和半导体性的单壁碳纳米管。半导体性的碳纳米管在会被溶解在有机溶剂中的小分子化合物包裹，其中，小分子化合物的通式为稠环芳烃-苯环-稠环芳烃(PAH-B-PAH，Polycyclic Aromatic Hydrocarbon-Benzene-Polycyclic Aromatic Hydrocarbon)，其化学结构通式如下所示：Specifically, the single-walled carbon nanotubes may be prepared by a laser evaporation method, an arc discharge method, or a chemical vapor deposition method, and the single-walled carbon nanotubes include metallic single-walled carbon nanotubes and semiconductor properties. Single-walled carbon nanotubes. The semiconducting carbon nanotubes are encapsulated by small molecular compounds which are dissolved in an organic solvent, wherein the small molecular compound has the general formula of a polycyclic aromatic hydrocarbon-benzene ring-fused aromatic hydrocarbon (PAH-B-PAH, Polycyclic Aromatic Hydrocarbon- Benzene-Polycyclic Aromatic Hydrocarbon), whose chemical structure is as follows:
所述稠环芳烃(PAN)即上述结构通式中的R1和R2包括且不限于芘、蒽、苯并芘、萘、丁省、菲和萘嵌苯等五个苯环之内的稠环芳烃，所述稠环芳烃的化学结构式如下所示：The fused ring aromatic hydrocarbon (PAN), that is, R1 and R2 in the above structural formula includes, but is not limited to, a fused ring within five benzene rings such as ruthenium, osmium, benzofluorene, naphthalene, butyl, phenanthrene and naphthene. An aromatic hydrocarbon, the chemical structural formula of the fused aromatic hydrocarbon is as follows:
具体的，所述PAH-B-PAH包括且不限于1，4-双(蒽-9-甲硫基)-对二甲苯、1-(芘-1-甲氧基)-4-(蒽-1-甲氧基)-对二甲苯、1-(芘-1-甲硫基)-4-(芘-1-甲硫基)-对二甲苯、1-(苯并芘-1-甲氧基)-4-(苯并芘-1-甲氧基)-对二甲苯，所述小分子化合物的具体化学结构式如下：Specifically, the PAH-B-PAH includes, but is not limited to, 1,4-bis(indol-9-methylthio)-p-xylene, 1-(indol-1-methoxy)-4-(anthracene- 1-methoxy)-p-xylene, 1-(indol-1-methylthio)-4-(indol-1-methylthio)-p-xylene, 1-(benzoxan-1-methoxy The specific chemical structural formula of the small molecule compound is as follows: 4-(benzoxan-1-methoxy)-p-xylene:
可以溶解小分子化合物的有机溶剂包括且不限于甲苯溶液。对混合油单壁碳纳米管和小分子化合物的有机溶剂在冰水浴条件下进行超声分散，可有效防止所述有机溶剂在超声过程中大量挥发，当所述小分子化合物和所述单壁碳纳米管在所述有机溶剂中超声分散孵化后，所述小分子化合物通过与半导体性的单壁碳纳米管有选择性的包裹复合，使半导体性的单壁碳纳米管在所述有机溶剂中溶解分散性增强。本实施例中，取电弧法制备的碳纳米管溶于含有小分子化合物的甲苯溶液中，在冰水浴的条件下，超声分散20min～40min，得到碳纳米管悬浊液，碳纳米管和小分子化合物的质量比为1～3。Organic solvents that can dissolve small molecule compounds include, but are not limited to, toluene solutions. Ultrasonic dispersion of an organic solvent of a mixed oil single-walled carbon nanotube and a small molecule compound in an ice water bath condition can effectively prevent the organic solvent from volatilizing a large amount during the ultrasonic process, when the small molecule compound and the single-walled carbon After the nanotubes are ultrasonically dispersed and incubated in the organic solvent, the small molecule compound is selectively encapsulated with the semiconducting single-walled carbon nanotubes to make the semiconducting single-walled carbon nanotubes in the organic solvent. The solubility and dispersibility are enhanced. In this embodiment, the carbon nanotubes prepared by the arc method are dissolved in a toluene solution containing a small molecule compound, and ultrasonically dispersed in an ice water bath for 20 min to 40 min to obtain a carbon nanotube suspension, a carbon nanotube and a small carbon nanotube. The mass ratio of the molecular compound is 1-3.
优选的，在本实施例中，取4mg电弧法制备的碳纳米管，溶于20ml含有2mg小分子化合物的甲苯溶液中，在冰水浴的条件下，超声分散30min，得到碳纳米管悬浊液。Preferably, in the present embodiment, the carbon nanotubes prepared by the 4 mg arc method are dissolved in 20 ml of a toluene solution containing 2 mg of a small molecule compound, and ultrasonically dispersed for 30 minutes in an ice water bath to obtain a carbon nanotube suspension. .
S102，将所述碳纳米管悬浊液进行离心处理以去除碳纳米管悬浊液的沉积物，得到半导体性的单壁碳纳米管上清液。S102, the carbon nanotube suspension is subjected to centrifugation to remove deposits of the carbon nanotube suspension to obtain a semiconducting single-walled carbon nanotube supernatant.
具体的，所述碳纳米管悬浊液在离心机中高速离心之后，金属性的单壁碳纳米管和非晶态碳化物沉淀在溶液底部，而半导体性的单壁碳纳米管则被小分子化合物包裹溶解在有机溶剂中，从而可以通过将上清液和底部沉淀物分离来实现金属性的单壁碳纳米管和半导体性的单壁碳纳米管的分离。可以从离心管中取出上清液，去掉底部的溶液中的金属性单壁碳纳米管和非晶态碳杂质，从而得到高含量的半导体性单壁碳纳米管，用于构建碳纳米管薄膜晶体管。本实施例中，所述碳纳米管悬浊液经20kg～30kg的离心力下高速离心20min～40min后，用注射器从离心管中取出上清液，去掉离心管底部金属性单壁碳纳米管和非晶态碳杂质，得到高含量的半导体性单壁碳纳米管溶液。Specifically, after the high speed centrifugation of the carbon nanotube suspension in a centrifuge, metallic single-walled carbon nanotubes and amorphous carbides are precipitated at the bottom of the solution, and the semiconducting single-walled carbon nanotubes are small. The molecular compound is encapsulated and dissolved in an organic solvent, so that the separation of the metallic single-walled carbon nanotubes and the semiconducting single-walled carbon nanotubes can be achieved by separating the supernatant and the bottom precipitate. The supernatant can be taken out from the centrifuge tube to remove the metallic single-walled carbon nanotubes and amorphous carbon impurities in the bottom solution, thereby obtaining a high content of semiconducting single-walled carbon nanotubes for constructing the carbon nanotube film. Transistor. In this embodiment, the carbon nanotube suspension is centrifuged at a high speed of 20 kg to 30 kg for 20 min to 40 min, and then the supernatant is taken out from the centrifuge tube by a syringe to remove the metallic single-walled carbon nanotubes at the bottom of the centrifuge tube. Amorphous carbon impurities provide a high content of semiconducting single-walled carbon nanotube solution.
请参阅图2，本发明还提供一种薄膜晶体管的制备方法，包括：Referring to FIG. 2, the present invention also provides a method for fabricating a thin film transistor, comprising:
S201，在基板上形成底栅极以及覆盖所述底栅极的底栅绝缘层。S201, forming a bottom gate on the substrate and a bottom gate insulating layer covering the bottom gate.
具体的，所述基板包括且不限于石英基板、玻璃基板或柔性塑料基板。本实施例中，基板为玻璃基板，在玻璃基板上用物理气相沉积法先溅射上Mo膜，后溅射上Cu膜共同形成第一金属膜，再采用光刻处理形成Mo/Cu底栅极，再在底栅极上采用等离子增强化学沉积的方法覆盖上200nm厚的SiO
2作为底栅绝缘层，再用丙酮、甲醇和异丙醇浸泡冲洗掉杂质，在50℃～100℃下烘干。其中，所述底栅极的材料包括且不限于Al、Ag、Cu、Mo或Ti等一种或多种导电材料，所述底栅绝缘层的材料包括且不限于SiO
2、Al
2O
3、SiN
x、HfO
2或离子凝胶等材料。所述底栅极和所述栅极绝缘层的形成方法包括且不限于等离子增强化学沉积(PECVD，Plasma Enhanced Chemical Vapor Deposition)等沉积方法。
Specifically, the substrate includes, but is not limited to, a quartz substrate, a glass substrate, or a flexible plastic substrate. In this embodiment, the substrate is a glass substrate, and a Mo film is first sputtered on the glass substrate by physical vapor deposition, then a Cu film is formed by sputtering to form a first metal film, and then a photolithographic process is used to form a Mo/Cu bottom gate. On the bottom gate, a 200 nm thick SiO 2 is covered as a bottom gate insulating layer by plasma enhanced chemical deposition, and then the impurities are washed away with acetone, methanol and isopropanol, and baked at 50 ° C to 100 ° C. dry. Wherein, the material of the bottom gate includes and is not limited to one or more conductive materials such as Al, Ag, Cu, Mo or Ti, and the material of the bottom gate insulating layer includes and is not limited to SiO 2 , Al 2 O 3 . , SiN x , HfO 2 or ionic gel materials. The method of forming the bottom gate and the gate insulating layer includes, but is not limited to, a deposition method such as Plasma Enhanced Chemical Vapor Deposition (PECVD).
S202，用半导体性的单壁碳纳米管上清液在所述底栅绝缘层上形成有源层。S202, forming an active layer on the bottom gate insulating layer with a semiconducting single-walled carbon nanotube supernatant.
本实施例中，所述单壁纳米管上清液由上述半导体性单壁碳纳米管的提纯方法制备得到，在充有保护气体的手套箱中将S201中的制备的基板浸入到所述半导体性的单壁纳米管上清液中，通过多次提拉沉积技术，形成均匀的碳纳米管有源层，再以光刻技术与氧气等离子体刻蚀出碳纳米管沟道后置于电子束蒸镀机中。In this embodiment, the single-walled nanotube supernatant is prepared by the above-mentioned method for purifying the semi-conducting single-walled carbon nanotubes, and the substrate prepared in S201 is immersed in the semiconductor in a glove box filled with a protective gas. In the single-walled nanotube supernatant, a uniform carbon nanotube active layer is formed by multiple lift deposition techniques, and the carbon nanotube channel is etched by photolithography and oxygen plasma and placed in the electron. In the beam evaporation machine.
S203，在所述有源层的相对两端分别形成源极和漏极。S203, a source and a drain are respectively formed at opposite ends of the active layer.
本实施例中，用电子蒸镀技术在底栅绝缘层上先镀上一层Mo膜，接着蒸镀一层Cu膜，再蒸镀一层Mo膜共同形成由Mo/Cu/Mo三层膜构成的第二金属层，再通过光刻技术把第二金属层图案化，形成源漏极，可以理解的是，在光刻过程中采用不同的掩膜板可制备出不同沟道长宽比的晶体管沟道。其中，所述源漏极的材料包括且不限于Al、Ag、Cu、Mo或Ti等一种或多种导电材料。In this embodiment, a layer of Mo film is first plated on the bottom gate insulating layer by electron evaporation, followed by vapor deposition of a Cu film, and then vapor deposition of a layer of Mo film to form a three-layer film of Mo/Cu/Mo. Forming a second metal layer, and then patterning the second metal layer by photolithography to form a source and a drain. It can be understood that different channel length ratios can be prepared by using different mask plates in the photolithography process. Transistor channel. The material of the source and drain includes, and is not limited to, one or more conductive materials such as Al, Ag, Cu, Mo or Ti.
S204，在所述源极和漏极上依次形成顶栅绝缘层、顶部栅极和钝化层。S204, a top gate insulating layer, a top gate, and a passivation layer are sequentially formed on the source and the drain.
本实施例中，在步骤S203中制备的样品上用化学气相沉积法覆盖上300nm厚的SiO
2薄膜作为顶栅绝缘层；在荫罩的作用下先蒸镀上一层Mo膜，再蒸镀上一层Cu膜，所述Mo/Cu膜层形成顶部栅极；接着用化学气相沉积法覆盖上SiO
2作为钝化层。其中，所述顶栅绝缘层和钝化层的形成方法包括化 学气相沉积或物理气相沉积，且顶栅绝缘层的形成厚度不作具体限制，以本领域技术人员了解的能够实现本发明目的的技术特征为依据。所述顶栅绝缘层的材料包括且不限于SiO
2、Al
2O
3、SiN
x、HfO
2或离子凝胶等材料，所述顶部栅极的材料包括且不限于Al、Ag、Cu、Mo或Ti等一种或多种导电材料，所述钝化层的材料包括且不限于SiO
2、磷硅玻璃、Si
3N
4或Al
2O
3等材料。
In this embodiment, a 300 nm thick SiO 2 film is covered by a chemical vapor deposition method as a top gate insulating layer on the sample prepared in the step S203; a Mo film is vapor-deposited under the action of the shadow mask, and then vapor deposition is performed. An upper Cu film is formed, and the Mo/Cu film layer forms a top gate; then SiO 2 is overlaid as a passivation layer by chemical vapor deposition. Wherein, the method for forming the top gate insulating layer and the passivation layer comprises chemical vapor deposition or physical vapor deposition, and the thickness of formation of the top gate insulating layer is not specifically limited, and the technology capable of achieving the object of the present invention as understood by those skilled in the art is known. Features are based. The material of the top gate insulating layer includes and is not limited to materials such as SiO 2 , Al 2 O 3 , SiN x , HfO 2 or ionic gel, and the material of the top gate includes and is not limited to Al, Ag, Cu, Mo. Or one or more conductive materials such as Ti, the material of the passivation layer includes and is not limited to materials such as SiO 2 , phosphosilicate glass, Si 3 N 4 or Al 2 O 3 .
进一步的，在所述顶栅绝缘层上依次通过涂布光刻胶、曝光、蚀刻和去光阻制备出接触孔，得到双栅极碳纳米薄膜晶体管。Further, a contact hole is sequentially formed on the top gate insulating layer by coating a photoresist, exposing, etching, and photoresist removing to obtain a double gate carbon nano thin film transistor.
本发明所述薄膜晶体管的制备过程中采用了高纯度的半导体性碳纳米管制备有源层，制备得到了高性能场效应的碳纳米薄膜晶体管。In the preparation process of the thin film transistor of the invention, a high-purity semiconducting carbon nanotube is used to prepare an active layer, and a high-performance field effect carbon nano-thin film transistor is prepared.
请参阅图3，本发明还提供一种薄膜晶体管100，由上述薄膜晶体管的制备方法制备得到，用于制备显示面板。如图3所示，所述薄膜晶体管100包括：在基板10上依次形成的底栅极20和底栅绝缘层30；在所述底栅绝缘层30上形成的有源层40；位于所述有源层40两端的源极和漏极50；覆盖所述源极和漏极50的顶栅绝缘层60、顶部栅极70、钝化层80；以及接触孔90。Referring to FIG. 3, the present invention also provides a thin film transistor 100 prepared by the above method for preparing a thin film transistor for preparing a display panel. As shown in FIG. 3, the thin film transistor 100 includes a bottom gate electrode 20 and a bottom gate insulating layer 30 sequentially formed on a substrate 10; an active layer 40 formed on the bottom gate insulating layer 30; a source and a drain 50 at both ends of the active layer 40; a top gate insulating layer 60, a top gate 70, a passivation layer 80 covering the source and drain electrodes 50; and a contact hole 90.
以上所揭露的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, and those skilled in the art can understand all or part of the process of implementing the above embodiments, and according to the claims of the present invention. The equivalent change is still within the scope of the invention.
Claims (12)
- 一种碳纳米管的提纯方法，其中，包括：A method for purifying carbon nanotubes, comprising:取混合有金属性的单壁碳纳米管和半导体性的单壁碳纳米管的单壁碳纳米管加入含有小分子化合物的有机溶剂中，超声分散，得到碳纳米管悬浊液；Single-walled carbon nanotubes mixed with metallic single-walled carbon nanotubes and semi-conducting single-walled carbon nanotubes are added to an organic solvent containing a small molecule compound, and ultrasonically dispersed to obtain a carbon nanotube suspension;将所述碳纳米管悬浊液进行离心处理以去除碳纳米管悬浊液的沉积物，得到半导体性的单壁碳纳米管上清液。The carbon nanotube suspension was subjected to centrifugation to remove deposits of the carbon nanotube suspension to obtain a semiconducting single-walled carbon nanotube supernatant.
- 如权利要求1所述的碳纳米管的提纯方法，其中，在取混合有金属性的单壁碳纳米管和半导体性的单壁碳纳米管的单壁碳纳米管加入含有小分子化合物的有机溶剂中，超声分散，得到碳纳米管悬浊液的过程中，在冰水浴的条件下进行超声分散。The method for purifying carbon nanotubes according to claim 1, wherein the organic material containing the small molecule compound is added to the single-walled carbon nanotube in which the single-walled carbon nanotubes and the semi-walled carbon nanotubes are mixed with the metallic single-walled carbon nanotubes. In the solvent, ultrasonic dispersion, in the process of obtaining a suspension of carbon nanotubes, ultrasonic dispersion is carried out under ice water bath conditions.
- 如权利要求1所述的碳纳米管的提纯方法，其中，在将所述碳纳米管悬浊液进行离心处理以去除碳纳米管悬浊液的沉积物，得到半导体性的单壁碳纳米管上清液的过程中，在离心机中对所述碳纳米管悬浊液进行离心处理。The method for purifying carbon nanotubes according to claim 1, wherein the carbon nanotube suspension is subjected to centrifugation to remove deposits of the carbon nanotube suspension to obtain semiconducting single-walled carbon nanotubes. During the supernatant, the carbon nanotube suspension was centrifuged in a centrifuge.
- 如权利要求1所述的碳纳米管的提纯方法，其中，所述碳纳米管的提纯方法包括：The method for purifying carbon nanotubes according to claim 1, wherein the method for purifying the carbon nanotubes comprises:取电弧法制备的碳纳米管溶于含有小分子化合物的甲苯溶液中，在冰水浴条件下，超声分散20min～40min，得到碳纳米管悬浊液，其中碳纳米管和小分子化合物的质量比为1～3；The carbon nanotubes prepared by the arc method are dissolved in a toluene solution containing a small molecule compound, and ultrasonically dispersed in an ice water bath for 20 min to 40 min to obtain a carbon nanotube suspension, wherein the mass ratio of the carbon nanotubes to the small molecule compound is obtained. 1 to 3;将所述碳纳米管悬浊液在20kg～30kg的离心力下高速离心20min～40min，去除碳纳米管悬浊液的沉积物，得到半导体性的单壁碳纳米管上清液。The carbon nanotube suspension was centrifuged at a high speed of 20 kg to 30 kg for 20 min to 40 min, and the deposit of the carbon nanotube suspension was removed to obtain a semiconducting single-walled carbon nanotube supernatant.
- 如权利要求2所述的碳纳米管的提纯方法，其中，所述碳纳米管的提纯方法包括：The method for purifying carbon nanotubes according to claim 2, wherein the method for purifying the carbon nanotubes comprises:取电弧法制备的碳纳米管溶于含有小分子化合物的甲苯溶液中，在冰水浴条件下，超声分散20min～40min，得到碳纳米管悬浊液，其中碳纳米管和小分子化合物的质量比为1～3；The carbon nanotubes prepared by the arc method are dissolved in a toluene solution containing a small molecule compound, and ultrasonically dispersed in an ice water bath for 20 min to 40 min to obtain a carbon nanotube suspension, wherein the mass ratio of the carbon nanotubes to the small molecule compound is obtained. 1 to 3;将所述碳纳米管悬浊液在20kg～30kg的离心力下高速离心20min～40min，去除碳纳米管悬浊液的沉积物，得到半导体性的单壁碳纳米管上清液。The carbon nanotube suspension was centrifuged at a high speed of 20 kg to 30 kg for 20 min to 40 min, and the deposit of the carbon nanotube suspension was removed to obtain a semiconducting single-walled carbon nanotube supernatant.
- 如权利要求3所述的碳纳米管的提纯方法，其中，所述碳纳米管的提 纯方法包括：The method for purifying carbon nanotubes according to claim 3, wherein the method for purifying the carbon nanotubes comprises:取电弧法制备的碳纳米管溶于含有小分子化合物的甲苯溶液中，在冰水浴条件下，超声分散20min～40min，得到碳纳米管悬浊液，其中碳纳米管和小分子化合物的质量比为1～3；The carbon nanotubes prepared by the arc method are dissolved in a toluene solution containing a small molecule compound, and ultrasonically dispersed in an ice water bath for 20 min to 40 min to obtain a carbon nanotube suspension, wherein the mass ratio of the carbon nanotubes to the small molecule compound is obtained. 1 to 3;将所述碳纳米管悬浊液在20kg～30kg的离心力下高速离心20min～40min，去除碳纳米管悬浊液的沉积物，得到半导体性的单壁碳纳米管上清液。The carbon nanotube suspension was centrifuged at a high speed of 20 kg to 30 kg for 20 min to 40 min, and the deposit of the carbon nanotube suspension was removed to obtain a semiconducting single-walled carbon nanotube supernatant.
- 如权利要求1所述的碳纳米管的提纯方法，其中，所述小分子化合物包括1，4-双(蒽-9-甲硫基)-对二甲苯、1-(芘-1-甲氧基)-4-(蒽-1-甲氧基)-对二甲苯、1-(芘-1-甲硫基)-4-(芘-1-甲硫基)-对二甲苯、1-(苯并芘-1-甲氧基)4-(苯并芘-1-甲氧基)-对二甲苯。The method for purifying carbon nanotubes according to claim 1, wherein said small molecule compound comprises 1,4-bis(indol-9-methylthio)-p-xylene, 1-(indol-1-methoxy 4-(indol-1-methoxy)-p-xylene, 1-(indol-1-methylthio)-4-(indol-1-ylthio)-p-xylene, 1-( Benzoindole-1-methoxy)4-(benzoxan-1-methoxy)-p-xylene.
- 一种薄膜晶体管的制备方法，其中，包括：A method for preparing a thin film transistor, comprising:在基板上形成底栅极以及覆盖所述底栅极的底栅绝缘层；Forming a bottom gate on the substrate and a bottom gate insulating layer covering the bottom gate;用半导体性的单壁碳纳米管上清液在所述底栅绝缘层上形成有源层；Forming an active layer on the bottom gate insulating layer with a semiconducting single-walled carbon nanotube supernatant;在所述有源层的相对两端分别形成源极和漏极；Forming a source and a drain respectively at opposite ends of the active layer;在所述源极和漏极上依次形成顶栅绝缘层、顶部栅极和钝化层。A top gate insulating layer, a top gate, and a passivation layer are sequentially formed on the source and the drain.
- 如权利要求8所述的薄膜晶体管的制备方法，其中，在基板上形成底栅极以及覆盖所述底栅极的底栅绝缘层之后，用有机溶液浸泡冲洗所述基板，并在50℃～100℃下烘干。The method of manufacturing a thin film transistor according to claim 8, wherein after the bottom gate is formed on the substrate and the bottom gate insulating layer covering the bottom gate, the substrate is immersed and rinsed with an organic solution at 50 ° C. Dry at 100 °C.
- 如权利要求8所述的薄膜晶体管的制备方法，其中，在用半导体性的单壁碳纳米管上清液在所述底栅绝缘层上形成有源层的过程中，所述有源层通过提拉沉积的方式形成。The method of manufacturing a thin film transistor according to claim 8, wherein in the process of forming an active layer on the bottom gate insulating layer with a semiconducting single-walled carbon nanotube supernatant, the active layer passes The method of pulling deposition is formed.
- 如权利要求8所述的薄膜晶体管的制备方法，其中，所述用半导体性的单壁碳纳米管上清液在所述底栅绝缘层上形成有源层的过程在充满保护气体的气氛中进行。The method of producing a thin film transistor according to claim 8, wherein the process of forming an active layer on the bottom gate insulating layer with the semiconducting single-walled carbon nanotube supernatant is in a gas atmosphere-filled atmosphere get on.
- 一种薄膜晶体管，其中，包括：A thin film transistor, comprising:在基板上依次形成的底栅极和底栅绝缘层；a bottom gate and a bottom gate insulating layer sequentially formed on the substrate;在所述底栅绝缘层上形成的有源层，所述有源层由权利要求1提纯的碳纳米管制成；An active layer formed on the bottom gate insulating layer, the active layer being made of the carbon nanotube purified according to claim 1;位于所述有源层两端的源极和漏极；a source and a drain at both ends of the active layer;覆盖所述源极和漏极的顶栅绝缘层、顶部栅极、钝化层；a top gate insulating layer, a top gate, and a passivation layer covering the source and the drain;以及接触孔。And contact holes.
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