CN108163840A - Carbon nanotube method of purification, thin film transistor (TFT) and preparation method - Google Patents
Carbon nanotube method of purification, thin film transistor (TFT) and preparation method Download PDFInfo
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- CN108163840A CN108163840A CN201711444710.3A CN201711444710A CN108163840A CN 108163840 A CN108163840 A CN 108163840A CN 201711444710 A CN201711444710 A CN 201711444710A CN 108163840 A CN108163840 A CN 108163840A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 58
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 238000000746 purification Methods 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000002109 single walled nanotube Substances 0.000 claims abstract description 60
- 239000000725 suspension Substances 0.000 claims abstract description 30
- 150000001875 compounds Chemical class 0.000 claims abstract description 23
- 239000006228 supernatant Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000003960 organic solvent Substances 0.000 claims abstract description 13
- 238000002161 passivation Methods 0.000 claims abstract description 10
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 claims description 22
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 15
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 claims description 11
- 239000005457 ice water Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000002071 nanotube Substances 0.000 claims description 4
- 238000011010 flushing procedure Methods 0.000 claims description 3
- 238000000703 high-speed centrifugation Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims 3
- 125000004646 sulfenyl group Chemical group S(*)* 0.000 claims 1
- 239000010408 film Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002088 nanocapsule Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002238 carbon nanotube film Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- FMMWHPNWAFZXNH-UHFFFAOYSA-N ERM-AC051 Natural products C1=C2C3=CC=CC=C3C=C(C=C3)C2=C2C3=CC=CC2=C1 FMMWHPNWAFZXNH-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- 229940049706 benzodiazepine Drugs 0.000 description 1
- 210000005252 bulbus oculi Anatomy 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Thin Film Transistor (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The present invention provides a kind of method of purification of carbon nanotube, including：The single-walled carbon nanotube of the single-walled carbon nanotube of the single-walled carbon nanotube for being mixed with metallicity and semiconductive is taken to add in the organic solvent containing micromolecular compound, ultrasonic disperse obtains carbon nanotube suspension；The carbon nanotube suspension is subjected to centrifugal treating to remove the deposit of carbon nanotube suspension, obtains the single-walled nanotube supernatant of semiconductive.The present invention also provides a kind of preparation method of thin film transistor (TFT), including：The bottom gate insulating layer of bottom-gate and the covering bottom-gate is formed on substrate；With the single-walled nanotube supernatant of semiconductive active layer is formed on the bottom gate insulating layer；Source electrode and drain electrode is respectively formed in the opposite end of the active layer；Top-gated insulating layer, top grid and passivation layer are sequentially formed in the source electrode and drain electrode.The present invention also provides a kind of thin film transistor (TFT)s.
Description
Technical field
The present invention relates to display fabrication techniques field, more particularly to a kind of carbon nanotube method of purification, thin film transistor (TFT)
And preparation method.
Background technology
In recent years, carbon nanocapsule thin film transistor (CNT-TFT, Carbon Nanotube Thin Film Transitor)
Because its high mobility, the high grade of transparency and elastomeric feature have attracted the eyeball of numerous field of display researchers.
In general, CNT-TFT is prepared by network-like carbon nano-tube film.Wherein, single-walled carbon nanotube
(SWCNT, Single-Walled Carbon Nanotube) has metallic single-wall carbon nano-tube (m- in the synthesis process
SWCNT, metallic Single-Walled Carbon Nanotube) and semi-conductive single-walled carbon nanotubes (sc-SWCNT,
Semiconductor Single-Walled Carbon Nanotube) mix.M-SWCNT is used for preparing the electricity of nanoscale
Pole, and sc-SWCNT is then the conducting channel of high mobility and on-off ratio, and the band gap of the sc-SWCNT of different-diameter also has
Institute is different, and the difference of band gap distribution width can cause the electric conductivity of the CNT-TFT prepared that can substantially reduce.
Invention content
The purpose of the present invention is to provide a kind of carbon nanotube methods of purification, are used to prepare the carbon nanometer of high-performance field-effect
Thin film transistor (TFT).
The present invention also provides a kind of carbon nanocapsule thin film transistors and preparation method thereof.
The method of purification of of the present invention kind of carbon nanotube, including：
The single-walled carbon nanotube of the single-walled carbon nanotube of the single-walled carbon nanotube for being mixed with metallicity and semiconductive is taken to add
Enter in the organic solvent containing micromolecular compound, ultrasonic disperse obtains carbon nanotube suspension；
The carbon nanotube suspension is subjected to centrifugal treating to remove the deposit of carbon nanotube suspension, is partly led
The single-walled carbon nanotube supernatant of body.
Wherein, it is received in the single wall carbon for taking the single-walled carbon nanotube of the single-walled carbon nanotube for being mixed with metallicity and semiconductive
Mitron is added in the organic solvent containing micromolecular compound, ultrasonic disperse, during obtaining carbon nanotube suspension, in ice
Ultrasonic disperse is carried out under conditions of water-bath.
Wherein, the carbon nanotube suspension is being subjected to centrifugal treating to remove the deposit of carbon nanotube suspension,
During obtaining the single-walled carbon nanotube supernatant of semiconductive, the carbon nanotube suspension is carried out in centrifuge from
Heart processing.
Wherein, the method for purification of the carbon nanotube includes：
Carbon nanotube prepared by arc process is taken to be dissolved in the toluene solution containing micromolecular compound, in ice-water bath condition
Under, ultrasonic disperse 20min~40min obtains the mass ratio of carbon nanotube suspension, wherein carbon nanotube and micromolecular compound
It is 1~3；
By the carbon nanotube suspension under the centrifugal force of 20kg~30kg high speed centrifugation 20min~40min, remove carbon
The deposit of nanotube suspension obtains the single-walled carbon nanotube supernatant of semiconductive.
Wherein, the micromolecular compound includes Isosorbide-5-Nitrae-bis- (anthracene -9- methyl mercaptos)-paraxylene, 1- (pyrene -1- methoxies
Base) -4- (anthracene -1- methoxyl groups)-paraxylene, 1- (pyrene -1- methyl mercaptos) -4- (pyrene -1- methyl mercaptos)-paraxylene, 1- (benzos
Pyrene -1- methoxyl groups) -4- (BaP -1- methoxyl groups)-paraxylene.
The preparation method of thin film transistor (TFT) of the present invention, including：
The bottom gate insulating layer of bottom-gate and the covering bottom-gate is formed on substrate；
With the single-walled carbon nanotube supernatant of semiconductive active layer is formed on the bottom gate insulating layer；
Source electrode and drain electrode is respectively formed in the opposite end of the active layer；
Top-gated insulating layer, top grid and passivation layer are sequentially formed in the source electrode and drain electrode.
Wherein, it is formed on substrate after the bottom gate insulating layer of bottom-gate and the covering bottom-gate, uses organic solution
Substrate described in soaking flushing, and dried at 50 DEG C~100 DEG C.
Wherein, in the mistake for forming active layer on the bottom gate insulating layer with the single-walled carbon nanotube supernatant of semiconductive
Cheng Zhong, the active layer are formed by way of lifting and depositing.
Wherein, the single-walled carbon nanotube supernatant with semiconductive forms active layer on the bottom gate insulating layer
Process carries out in the atmosphere full of protective gas.
Thin film transistor (TFT) of the present invention, including：
The bottom-gate and bottom gate insulating layer sequentially formed on substrate；
The active layer formed on the bottom gate insulating layer, the carbon nanotube system that the active layer is purified by claim 1
Into；
Source electrode and drain electrode positioned at the active layer both ends；
Cover top-gated insulating layer, top grid, the passivation layer of the source electrode and drain electrode；
And contact hole.
Present invention employs the semiconductive carbon nano tube that single-walled carbon nanotube method of purification of the present invention has obtained, by
In the obtained semiconductive carbon nano tube band gap narrowly distributing of purification, by the use of the semiconductive carbon nano tube of high-purity as active layer system
It is standby to have obtained the carbon nanocapsule thin film transistor with high-performance field-effect.
Description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention, for those of ordinary skill in the art, without creative efforts, can be with
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the method for purification flow chart of single-walled carbon nanotube of the present invention.
Fig. 2 is the preparation method flow chart of thin film transistor (TFT) of the present invention.
Fig. 3 is the film layer structure figure of thin film transistor (TFT) of the present invention.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without creative efforts
Embodiment shall fall within the protection scope of the present invention.
Referring to Fig. 1, the present invention provides a kind of method of purification of semi-conductive single-walled carbon nanotubes, including：
S101 takes the single of the single-walled carbon nanotube of the single-walled carbon nanotube for being mixed with metallicity and semiconductive
Pipe is added in the organic solvent containing micromolecular compound, and ultrasonic disperse obtains carbon nanotube suspension.
Specifically, the single-walled carbon nanotube can use laser evaporization method, arc discharge method or chemical vapor deposition
The methods of be prepared, the single-walled carbon nanotube includes the single-walled carbon nanotube of metallicity and the single wall carbon of semiconductive
Nanotube.The carbon nanotube of semiconductive can be dissolved the package of micromolecular compound in organic solvent, wherein, small molecule
The general formula of compound is condensed-nuclei aromatics-phenyl ring-condensed-nuclei aromatics (PAH-B-PAH, Polycyclic Aromatic
Hydrocarbon-Benzene-Polycyclic Aromatic Hydrocarbon), chemical structure of general formula is as follows：
R1 and R2 in the condensed-nuclei aromatics (PAN) i.e. above structure general formula include and are not limited to pyrene, anthracene, BaP, naphthalene,
Condensed-nuclei aromatics within five phenyl ring such as naphthacene, phenanthrene and rylene, the chemical structural formula of the condensed-nuclei aromatics are as follows：
Specifically, the PAH-B-PAH includes and is not limited to Isosorbide-5-Nitrae-bis- (anthracene -9- methyl mercaptos)-paraxylene, 1- (pyrene -1-
Methoxyl group) -4- (anthracene -1- methoxyl groups)-paraxylene, 1- (pyrene -1- methyl mercaptos) -4- (pyrene -1- methyl mercaptos)-paraxylene, 1-
(BaP -1- methoxyl groups) -4- (BaP -1- methoxyl groups)-paraxylene, the particular chemical of the micromolecular compound
Formula is as follows：
The organic solvent that micromolecular compound can be dissolved includes and is not limited to toluene solution.To miscella single
The organic solvent of pipe and micromolecular compound carries out ultrasonic disperse under the conditions of ice-water bath, and the organic solvent can be effectively prevent to exist
It largely volatilizees in ultrasonic procedure, when the micromolecular compound and the single-walled carbon nanotube divide in the organic solvent for ultrasonic
After dissipating hatching, the micromolecular compound is selectively wrapped up compound by the single-walled carbon nanotube with semiconductive, makes half
Conducting single-walled carbon nanotube dissolution dispersity in the organic solvent enhances.In the present embodiment, take prepared by arc process
Carbon nanotube is dissolved in the toluene solution containing micromolecular compound, under conditions of ice-water bath, ultrasonic disperse 20min~
40min, obtains carbon nanotube suspension, and the mass ratio of carbon nanotube and micromolecular compound is 1~3.
Preferably, in the present embodiment, the carbon nanotube that 4mg arc processes is taken to prepare, is dissolved in 20ml and contains 2mg small molecules
In the toluene solution for closing object, under conditions of ice-water bath, ultrasonic disperse 30min obtains carbon nanotube suspension.
The carbon nanotube suspension is carried out centrifugal treating to remove the deposit of carbon nanotube suspension, obtained by S102
To the single-walled carbon nanotube supernatant of semiconductive.
Specifically, the carbon nanotube suspension in centrifuge high speed after centrifugation, the single-walled carbon nanotube of metallicity
Solution bottom is deposited in amorphous carbide, and the single-walled carbon nanotube of semiconductive is then wrapped up by micromolecular compound and being dissolved
In organic solvent, so as to by by supernatant and bottom sediment separation come realize metallicity single-walled carbon nanotube and
The separation of the single-walled carbon nanotube of semiconductive.Supernatant can be taken out from centrifuge tube, removes the metal in the solution of bottom
Property single-walled carbon nanotube and amorphous carbon impurity, so as to obtain the semi-conductive single-walled carbon nanotubes of high-content, for building carbon
Nano-tube film transistor.In the present embodiment, high speed centrifugation under centrifugal force of the carbon nanotube suspension through 20kg~30kg
After 20min~40min, supernatant is taken out from centrifuge tube with syringe, removes centrifuge tube bottom metal single-walled carbon nanotube
With amorphous carbon impurity, the semi-conductive single-walled carbon nanotubes solution of high-content is obtained.
Referring to Fig. 2, the present invention also provides a kind of preparation method of thin film transistor (TFT), including：
S201 forms the bottom gate insulating layer of bottom-gate and the covering bottom-gate on substrate.
Specifically, the substrate includes and is not limited to quartz base plate, glass substrate or flexible plastic substrates.The present embodiment
In, substrate is glass substrate, first sputters upper Mo films with physical vaporous deposition on the glass substrate, the common shape of the rear upper Cu films of sputtering
Mo/Cu bottom-gates are formed, then deposited in bottom-gate using plasma-reinforced chemical into the first metal film, then using photoetching treatment
The upper 200nm thickness of method covering SiO2Fall impurity as bottom gate insulating layer, then with acetone, methanol and isopropanol soaking flushing,
It is dried at 50 DEG C~100 DEG C.Wherein, the material of the bottom-gate include and be not limited to Al, Ag, Cu, Mo or Ti etc. it is a kind of or
A variety of conductive materials, the material of the bottom gate insulating layer include and are not limited to SiO2、Al2O3、SiNx、HfO2Or the materials such as ionic gel
Material.The bottom-gate and the forming method of the gate insulating layer include and be not limited to plasma-reinforced chemical deposition (PECVD,
Plasma Enhanced Chemical Vapor Deposition) etc. deposition methods.
S202 forms active layer with the single-walled carbon nanotube supernatant of semiconductive on the bottom gate insulating layer.
In the present embodiment, the single-walled nanotube supernatant by above-mentioned semi-conductive single-walled carbon nanotubes method of purification system
Standby to obtain, the single wall that the substrate of the preparation in S201 is immersed in the semiconductive in the glove box filled with protective gas is received
In mitron supernatant, by repeatedly lifting deposition technique, uniform carbon nanotube active layer is formed, then with photoetching technique and oxygen
Plasma etching goes out carbon nano-tube channel and is placed in electron beam evaporation plating machine.
S203 is respectively formed source electrode and drain electrode in the opposite end of the active layer.
In the present embodiment, last layer Mo films are first plated on bottom gate insulating layer with electronics evaporation coating technique, one layer of Cu is then deposited
Film, then one layer of Mo film is deposited and the second metal layer being made of Mo/Cu/Mo trilamellar membranes is collectively formed, then by photoetching technique
Two is metal layer patterning, forms source-drain electrode, it is to be understood that can be prepared not using different mask plates in a photolithographic process
With the transistor channel of raceway groove length-width ratio.Wherein, the material of the source-drain electrode includes and is not limited to Al, Ag, Cu, Mo or Ti etc. one
Kind or a variety of conductive materials.
S204 sequentially forms top-gated insulating layer, top grid and passivation layer in the source electrode and drain electrode.
It is thick that with chemical vapour deposition technique 300nm is covered in the present embodiment, on the sample that is prepared in step S203
SiO2Film is as top-gated insulating layer；Last layer Mo films are first deposited under the action of shadow mask, then last layer Cu films are deposited, it is described
Mo/Cu film layers form top grid；Then upper SiO is covered with chemical vapour deposition technique2As passivation layer.Wherein, the top-gated
The forming method of insulating layer and passivation layer includes chemical vapor deposition or physical vapour deposition (PVD), and the formation thickness of top-gated insulating layer
Be not specifically limited, using skilled in the art realises that the technical characteristic that can realize the object of the invention as foundation.The top
The material of gate insulation layer includes and is not limited to SiO2、Al2O3、SiNx、HfO2Or the materials such as ionic gel, the material of the top grid
Material includes and is not limited to one or more conductive materials such as Al, Ag, Cu, Mo or Ti, and the material of the passivation layer includes and unlimited
In SiO2, phosphorosilicate glass, Si3N4Or Al2O3Wait materials.
Further, coating photoresist, exposure, etching and removing photoresistance is passed sequentially through on the top-gated insulating layer to prepare
Contact hole obtains bigrid carbon nanocapsule thin film transistor.
The semiconductive carbon nano tube preparation that high-purity is employed in the preparation process of thin film transistor (TFT) of the present invention has
The carbon nanocapsule thin film transistor of high-performance field-effect has been prepared in active layer.
Referring to Fig. 3, the present invention also provides a kind of thin film transistor (TFT) 100, by the preparation method system of above-mentioned thin film transistor (TFT)
It is standby to obtain, it is used to prepare display panel.As shown in figure 3, the thin film transistor (TFT) 100 includes：It sequentially forms on the substrate 10
Bottom-gate 20 and bottom gate insulating layer 30；The active layer 40 formed on the bottom gate insulating layer 30；Positioned at 40 liang of the active layer
The source electrode and drain electrode 50 at end；Cover the top-gated insulating layer 60, top grid 70, passivation layer 80 of the source electrode and drain electrode 50；And
Contact hole 90.
The above disclosure is only the preferred embodiments of the present invention, cannot limit the right model of the present invention with this certainly
It encloses, one of ordinary skill in the art will appreciate that realizing all or part of flow of above-described embodiment, and will according to right of the present invention
Made equivalent variations are sought, still falls within and invents covered range.
Claims (10)
1. a kind of method of purification of carbon nanotube, which is characterized in that including：
The single-walled carbon nanotube of the single-walled carbon nanotube of the single-walled carbon nanotube for being mixed with metallicity and semiconductive is taken to add in contain
Have in the organic solvent of micromolecular compound, ultrasonic disperse obtains carbon nanotube suspension；
The carbon nanotube suspension is subjected to centrifugal treating to remove the deposit of carbon nanotube suspension, obtains semiconductive
Single-walled carbon nanotube supernatant.
2. the method for purification of carbon nanotube as described in claim 1, which is characterized in that taking the single wall carbon that is mixed with metallicity
The single-walled carbon nanotube of the single-walled carbon nanotube of nanotube and semiconductive is added in the organic solvent containing micromolecular compound,
Ultrasonic disperse during obtaining carbon nanotube suspension, carries out ultrasonic disperse under conditions of ice-water bath.
3. the method for purification of carbon nanotube as described in claim 1, which is characterized in that by the carbon nanotube suspension into
Row centrifugal treating obtains the process of the single-walled carbon nanotube supernatant of semiconductive to remove the deposit of carbon nanotube suspension
In, centrifugal treating is carried out to the carbon nanotube suspension in centrifuge.
4. such as the method for purification of claims 1 to 3 any one of them carbon nanotube, which is characterized in that the carbon nanotube
Method of purification includes：
Carbon nanotube prepared by arc process is taken to be dissolved in the toluene solution containing micromolecular compound, under the conditions of ice-water bath, is surpassed
Sound disperses 20min~40min, obtains carbon nanotube suspension, wherein the mass ratio of carbon nanotube and micromolecular compound for 1~
3；
By the carbon nanotube suspension under the centrifugal force of 20kg~30kg high speed centrifugation 20min~40min, remove carbon nanometer
The deposit of pipe suspension obtains the single-walled carbon nanotube supernatant of semiconductive.
5. the method for purification of carbon nanotube as described in claim 1, which is characterized in that the micromolecular compound include Isosorbide-5-Nitrae-
Bis- (anthracene -9- methyl mercaptos)-paraxylene, 1- (pyrene -1- methoxyl groups) -4- (anthracene -1- methoxyl groups)-paraxylene, 1- (pyrene -1- first
Sulfenyl) -4- (pyrene -1- methyl mercaptos)-paraxylene, 1- (BaP -1- methoxyl groups) -4- (BaP -1- methoxyl groups)-to diformazan
Benzene.
6. a kind of preparation method of thin film transistor (TFT), which is characterized in that including：
The bottom gate insulating layer of bottom-gate and the covering bottom-gate is formed on substrate；
With the single-walled carbon nanotube supernatant of semiconductive active layer is formed on the bottom gate insulating layer；
Source electrode and drain electrode is respectively formed in the opposite end of the active layer；
Top-gated insulating layer, top grid and passivation layer are sequentially formed in the source electrode and drain electrode.
7. the preparation method of thin film transistor (TFT) as claimed in claim 6, which is characterized in that on substrate formed bottom-gate and
After the bottom gate insulating layer for covering the bottom-gate, the substrate described in organic solution soaking flushing, and dried at 50 DEG C~100 DEG C
It is dry.
8. the preparation method of thin film transistor (TFT) as claimed in claim 6, which is characterized in that received with the single wall carbon of semiconductive
During mitron supernatant forms active layer on the bottom gate insulating layer, active layer shape by way of lifting and depositing
Into.
9. the preparation method of thin film transistor (TFT) as claimed in claim 6, which is characterized in that the single wall carbon with semiconductive
The process that nanotube supernatant forms active layer on the bottom gate insulating layer carries out in the atmosphere full of protective gas.
10. a kind of thin film transistor (TFT), which is characterized in that including：
The bottom-gate and bottom gate insulating layer sequentially formed on substrate；
The active layer formed on the bottom gate insulating layer, the active layer are made of the carbon nanotube that claim 1 purifies；
Source electrode and drain electrode positioned at the active layer both ends；
Cover top-gated insulating layer, top grid, the passivation layer of the source electrode and drain electrode；
And contact hole.
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| CN108987576A (en) * | 2018-07-18 | 2018-12-11 | 深圳市华星光电半导体显示技术有限公司 | The preparation method of carbon nano-tube coextruded film, carbon nanotube TFT and preparation method thereof |
| CN109256467A (en) * | 2018-09-07 | 2019-01-22 | 苏州欣替纳米科技有限公司 | High-performance single wall carbon nano-tube film transistor and preparation method thereof |
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| WO2020215875A1 (en) * | 2019-04-26 | 2020-10-29 | 京东方科技集团股份有限公司 | Thin film transistor and preparation method therefor, array substrate and display device |
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| WO2019127680A1 (en) | 2019-07-04 |
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