WO2019127006A1 - Système cathodique de pulvérisation au moyen de magnétron - Google Patents

Système cathodique de pulvérisation au moyen de magnétron Download PDF

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Publication number
WO2019127006A1
WO2019127006A1 PCT/CN2017/118593 CN2017118593W WO2019127006A1 WO 2019127006 A1 WO2019127006 A1 WO 2019127006A1 CN 2017118593 W CN2017118593 W CN 2017118593W WO 2019127006 A1 WO2019127006 A1 WO 2019127006A1
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WO
WIPO (PCT)
Prior art keywords
magnetron sputtering
sputtering cathode
target
electromagnetic system
electromagnetic
Prior art date
Application number
PCT/CN2017/118593
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English (en)
Chinese (zh)
Inventor
王三军
刘圣烈
黄维邦
余晓军
Original Assignee
深圳市柔宇科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 深圳市柔宇科技有限公司 filed Critical 深圳市柔宇科技有限公司
Priority to PCT/CN2017/118593 priority Critical patent/WO2019127006A1/fr
Priority to CN201780092148.4A priority patent/CN110770364A/zh
Publication of WO2019127006A1 publication Critical patent/WO2019127006A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Definitions

  • the present invention relates to the field of sputter coating, and more particularly to a magnetron sputtering cathode system.
  • Embodiments of the present invention provide a magnetron sputtering cathode system.
  • each of the electromagnetic system units operating independently and capable of generating a different magnetic effect, the magnetic field lines of the electromagnetic system unit passing through a sputtering surface of the target .
  • the magnetron sputtering cathode system of the embodiment of the invention comprises a plurality of electromagnetic system units, each of which operates independently and can generate different magnetic effects, so that the magnetic fields acting on different regions of the target can be individually controlled to improve the coating quality. To ensure that the equipment is sufficient.
  • FIG. 1 is a schematic structural view of a magnetron sputtering cathode system according to an embodiment of the present invention
  • FIG. 2 is a partial structural schematic view of a magnetron sputtering cathode system according to an embodiment of the present invention
  • FIG. 3 is a schematic structural view of an E-type magnetic element of an electromagnetic system unit of a magnetron sputtering cathode system according to an embodiment of the present invention
  • FIG. 4 is a plan view of a magnetron sputtering cathode system according to an embodiment of the present invention.
  • Magnetron sputtering cathode system 10 target 11, sputtering surface 112, electromagnetic system unit 12, magnetic member 121, coil 122, first electromagnetic system unit 123, second electromagnetic system unit 124, support plate 15, sliding track 152
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first” or “second” may include one or more of the described features either explicitly or implicitly.
  • the meaning of "a plurality" is two or more unless specifically defined otherwise.
  • the terms “installation”, “connected”, and “connected” should be understood broadly, and may be a fixed connection, for example, or They are detachable or integrally connected; they can be mechanically connected, they can be electrically connected or can communicate with each other; they can be connected directly or indirectly through an intermediate medium, which can be internal or two components of two components. Interaction relationship.
  • an intermediate medium which can be internal or two components of two components. Interaction relationship.
  • the "on" or “below” of the second feature may include direct contact of the first and second features, and may also include the first sum, unless otherwise specifically defined and defined.
  • the second feature is not in direct contact but through additional features between them.
  • the first feature “above”, “above” and “above” the second feature includes the first feature directly above and above the second feature, or merely indicating that the first feature level is higher than the second feature.
  • the first feature “below”, “below” and “below” the second feature includes the first feature directly below and below the second feature, or merely indicating that the first feature level is less than the second feature.
  • a magnetron sputtering cathode system 10 of an embodiment of the present invention includes a target 11 and a plurality of electromagnetic system units 12 disposed on one side of the target 11.
  • Each of the electromagnetic system units 12 operates independently and is capable of producing different magnetic effects, with the magnetic field lines of the electromagnetic system unit 12 passing through the sputtering surface 112 of the target 11.
  • magnetron sputtering is a physical Vapor Deposition (PVD) technology used in a sputter coating process to prepare various materials such as metals, semiconductors, and insulators.
  • the working principle of the magnetron sputtering cathode system 10 is: placing the magnetron sputtering cathode system 10 in an argon gas (or other low pressure inert gas) environment, and applying sufficient between the magnetron sputtering cathode system 10 and the anode substrate. The voltage forms an electric field of a certain intensity.
  • the electrons fly toward the substrate under the action of the electric field and collide with the argon atoms of the argon gas to ionize the argon atoms to generate argon ions and new electrons.
  • the new electrons fly toward the substrate, and the argon ions
  • the high-energy bombardment of the sputtering surface 112 of the target 11 under the action of an electric field causes the target 11 to be sputtered.
  • Neutral target atoms or molecules in the sputtered particles are deposited on the substrate to complete the coating of the substrate.
  • the magnetron sputtering cathode system 10 Since the magnetron sputtering cathode system 10 is subjected to high-speed sputtering at a low pressure, the ionization rate of argon gas or other low-pressure inert gas must be effectively increased to ensure the quality of the sputter coating, and thus the magnetron sputtering cathode system 10 is introduced.
  • the magnetic field uses the magnetic field to constrain the charged particles to increase the plasma density to increase the sputtering rate.
  • the magnetron sputtering cathode system 10 of an embodiment of the present invention includes a plurality of electromagnetic system units 12, each of which operates independently and is capable of generating different magnetic effects, thereby enabling separate control of magnetic fields acting on different regions of the target 11. Improve the quality of the coating and ensure that the equipment is fully loaded.
  • the target 11 may be a planar target, more specifically a circular planar target or a rectangular planar target having a certain thickness.
  • the target 11 may be made of a metal material such as aluminum, copper, iron, titanium, nickel, magnesium, chromium, zinc, silver, cobalt, or the like, or nickel chrome, nickel iron, nickel cobalt, nickel zirconium, nickel aluminum, nickel copper, etc.
  • a meta-alloy material or made of a multi-alloy material such as cobalt iron boron, copper indium gallium, copper indium gallium or the like; or made of a ceramic material, which is not limited herein.
  • the plurality of electromagnetic system units 12 are arranged in the same polarity, and the plurality of electromagnetic system units 12 are disposed in parallel and equidistantly with one side of the sputtering surface 112 of the target 11.
  • the sputtering surface 112 of the target 11 includes a plurality of strip-shaped regions, and the plurality of electromagnetic system units 12 respectively correspond to a plurality of regions of the sputtering surface 112 to be capable of generating magnetic effects on respective regions of the sputtering surface 112.
  • the electromagnetic system unit 12 can adjust the magnetic force effect acting on the region 11 according to the thickness of the target 11 of each region.
  • the magnetic effect includes the magnetic field strength, the action position and the magnetic field direction.
  • the spacing between the target 11 of the region and the electromagnetic system unit 12 corresponding to the region increases, and further
  • the electromagnetic system unit 12 corresponding to the region is adjusted online to increase the magnetic field strength acting on the region, so that the film thickness is uniform and the coating quality is improved.
  • the current magnetron sputtering system using permanent magnets has a utilization rate of only about 20% for the target, and the utilization rate of the magnetron sputtering cathode system 10 of the embodiment of the present invention for the target 11 is at least 40% or more, which is greatly improved.
  • the utilization rate of the target 11 is obtained.
  • each electromagnetic system unit 12 includes a magnetic component 121 and a coil 122 that surrounds at least a portion of the magnetic component 121.
  • the electromagnetic system unit 12 generates magnetism after the coil 122 is energized.
  • the number of turns of the coil 122 can be matched to the power of the electromagnetic system unit 12.
  • the magnetic member 121 may be made of soft iron, such as a ferrosilicon alloy or a soft ferrite.
  • the magnetic member 121 made of soft iron can be demagnetized immediately after the coil 122 is de-energized, so that the strength of the magnetic field generated by the electromagnetic system unit 12 can be changed in time by changing the magnitude of the current flowing through the coil 122.
  • the magnetron sputtering cathode system 10 further includes a power source and a controller coupled to the power source.
  • the power supply is connected to the coil 122, and the controller is used to control the current flowing through the coil 122.
  • the magnetic field generated by the electromagnetic system unit 12 can be controlled by controlling the current flowing through the coil 122.
  • the intensity of the magnetic field generated by the electromagnetic system unit 12 can be adjusted by controlling the magnitude of the current flowing through the coil 122.
  • the direction of the current flowing through the coil 122 can control the direction of the magnetic field generated by the electromagnetic system unit 12.
  • the controller controls the power source to flow through the current in the coil 122 of the electromagnetic system unit 12 corresponding to the region to increase the strength of the magnetic field acting on the region, so that the film thickness is uniform.
  • the coils 122 of the respective electromagnetic system units 12 are respectively connected to the power source through separate circuits to achieve independent control of the current in the coils 122 of the respective electromagnetic system units 12.
  • the magnetic component 121 includes an E-type magnetic element (as shown in Figure 3) or a U-shaped (i.e., hoof-type) magnetic element.
  • the magnetic member 121 is made E-shaped or U-shaped to be more easily magnetized.
  • the number of the E-type magnetic elements or the U-shaped magnetic elements may be plural, and the magnetic member 121 is stacked by the plurality of E-type magnetic elements or the U-shaped magnetic elements in the first direction, wherein the first direction is multiple The direction of wiring between the electromagnetic system units 12. Since the magnetron sputtering cathode system 10 performs high-speed sputtering at a low pressure, it is necessary to effectively increase the ionization rate of argon gas or other low-pressure inert gas to ensure the quality of the sputter coating.
  • a plurality of E-shaped magnetic elements or U-shaped magnetic elements stacked in the first direction increase the magnetic field strength of the electromagnetic system unit 12, and the charged particles are restrained by the magnetic field, so that the argon ions can carry sufficient energy when hitting the target 11 to make the target Sputtering of the material 11 avoids a decrease in the radius of operation of the electron spiral when the magnetic field strength is small, thereby correspondingly reducing the probability of collision with the argon atoms, resulting in a decrease in the sputter deposition rate.
  • each of the electromagnetic system units 12 includes an S pole and an N pole on both sides of the S pole.
  • the N pole of the first electromagnetic system unit 123 is adjacent to the N pole of the second electromagnetic system unit 124
  • the line connecting the N pole of the first electromagnetic system unit 123 and the N pole of the second electromagnetic system unit 124 is perpendicular to each electromagnetic system unit 12.
  • the magnetron sputtering cathode system 10 further includes a support plate 15 opposite the target 11.
  • a plurality of electromagnetic system units 12 are spaced apart from each other on the support plate 15 in a first direction, and a plurality of electromagnetic system units 12 are located between the target 11 and the support plate 15.
  • the support plate 15 is parallel to the sputtering surface 112, and the shape of the support plate 15 may correspond to the shape of the target 11.
  • the first direction that is, the connection direction between the plurality of electromagnetic system units 12
  • the longitudinal direction of the support plate 15 is the longitudinal direction of the support plate 15.
  • a plurality of electromagnetic system units 12 may be disposed on the support plate 15 in parallel and equally spaced along the first direction.
  • the magnetron sputtering cathode system 10 further includes a drive member that is coupled to the support plate 15.
  • the driving member is for driving the support plate 15 to move in the second direction, and the second direction is perpendicular to the sputtering surface 112. Still taking the support plate 15 as a rectangular shape, the second direction is a direction perpendicular to the support plate 15.
  • the thickness of the target 11 will gradually decrease during magnetron sputtering until the target 11 is broken down or completely depleted, resulting in a distance between the target 11 and the electromagnetic system unit 12 that will follow the target.
  • the thickness of the material 11 is changed to change (specifically, gradually becomes larger), so that the magnetic effect of the target 11 is weakened, and the rate and number of sputtered particles are reduced, which in turn causes the deposition rate to be slow, which affects the coating efficiency.
  • the operator usually adjusts the deposition time according to the amount of change in the distance between the target 11 and the electromagnetic system unit 12, that is, in the process of magnetron sputtering, the problem of slowing of the deposition rate is overcome by prolonging the deposition time.
  • this approach increases the difficulty for the operator to write process parameters.
  • the driving member can drive the support plate 15 to move toward or away from the target 11 according to the distance between the target 11 and the electromagnetic system unit 12, so that the distance between the target 11 and the electromagnetic system unit 12 is magnetic.
  • the predetermined value is maintained during the controlled sputtering process, so that the deposition rate can be increased, thereby ensuring the coating efficiency.
  • the distance between the target 11 and the electromagnetic system unit 12 is the distance between the sputtering surface 112 of the target 11 and the support plate 15, and the predetermined value refers to a process result corresponding to obtaining a desired film uniformity, deposition rate, and the like. distance.
  • the driving member can be a servo motor or a stepping motor. In other embodiments, the driving member can also be used to drive the support plate 15 to move in the first direction and/or the third direction, which is not limited herein.
  • the magnetron sputtering cathode system 10 further includes a plurality of retractable connectors 17 respectively corresponding to the plurality of electromagnetic system units 12, one end of each of the connectors 17 being disposed on the support The other end of the board 15 is connected to the electromagnetic system unit 12.
  • the electromagnetic system unit 12 is disposed on the support plate 15 via a connector 17.
  • the telescopic direction of the connector 17 is a second direction, and the connector 17 drives the electromagnetic system unit 12 to move toward or away from the target 11.
  • the driving member drives the supporting plate 15 to drive the plurality of electromagnetic system units 12 to move toward or away from the target 11 according to the distance between the target 11 and the electromagnetic system unit 12, and the connecting member 17 according to the target 11 of a certain region.
  • the thickness alone drives the electromagnetic system unit 12 corresponding to the region to move toward or away from the target 11 to achieve fine-tuning of the sub-region of the distance between the target 11 and the electromagnetic system unit 12.
  • the connecting member 17 includes a push rod 171 and a cylinder 172 .
  • One end of the push rod 171 is disposed in the cylinder 172 , and the other end of the push rod 171 and the electromagnetic system unit 12 . connection.
  • the cylinder 172 is used to drive the push rod 171 to move in the second direction to drive the electromagnetic system unit 12 to move toward or away from the target 11.
  • the connecting member 17 is a driving motor
  • the connecting member 17 includes a stator 173 and a telescopic mover 174.
  • One end of the mover 174 is disposed in the stator 173.
  • the other end of the sub-174 is connected to the electromagnetic system unit 12.
  • the stator 173 is used to drive the mover 174 to telescope in the second direction to drive the electromagnetic system unit 12 to move toward or away from the target 11.
  • the driving motor can be a magnetostrictive motor or a piezoelectric motor.
  • the magnetron sputtering cathode system 10 further includes a plurality of connectors 17 corresponding to the plurality of electromagnetic system units 12, respectively.
  • the support plate 15 includes a plurality of slide rails 152 spaced apart in a first direction, and each of the slide rails 152 extends in a third direction.
  • a plurality of sliding rails 152 correspond to the plurality of electromagnetic system units 12.
  • One end of each of the connectors 17 is slidably disposed on the slide rail 152, and the other end is coupled to the electromagnetic system unit 12.
  • the third direction may be the width direction of the support plate 15, and the third direction is perpendicular to the first direction.
  • the connecting member 17 may be the above-mentioned connector having a telescopic function or a connector having no telescopic function.
  • the connector 17 is slidable in the third direction along the slide rail 152.
  • the region includes a plurality of sub-regions distributed along the third direction (in this case, the plurality of sub-regions correspond to one electromagnetic system unit 12), one of which
  • the spacing between the target 11 of the sub-region and the electromagnetic system unit 12 corresponding to the region is increased, thereby acting on The magnetic field strength of the sub-region is weakened, the sputtering rate is decreased, and the film thickness is decreased, and the motor (or other driving device) of the magnetron sputtering cathode system 10 drives the connecting member 17 along the sliding track 152 (ie, in the third direction).
  • the connecting member 17 when the connecting member 17 is a retractable connecting member, the connecting member 17 can also move toward the target 11 (ie, in the second direction) as needed to further reduce the target 11 of the sub-region and correspond to the region.
  • the spacing between the electromagnetic system units 12 increases the strength of the magnetic field acting on the sub-regions, resulting in a uniform film thickness.
  • the magnetron sputtering cathode system 10 may further include a thickness measurer for detecting the thickness of the target 11, and the thickness measurer may be an eddy current sensor.
  • a "computer-readable medium” can be any apparatus that can contain, store, communicate, propagate, or transport a program for use in an instruction execution system, apparatus, or device, or in conjunction with the instruction execution system, apparatus, or device.
  • computer readable media include the following: electrical connections (control methods) having one or more wires, portable computer disk cartridges (magnetic devices), random access memory (RAM), Read only memory (ROM), erasable editable read only memory (EPROM or flash memory), fiber optic devices, and portable compact disk read only memory (CDROM).
  • the computer readable medium may even be a paper or other suitable medium on which the program can be printed, as it may be optically scanned, for example by paper or other medium, followed by editing, interpretation or, if appropriate, other suitable The method is processed to obtain the program electronically and then stored in computer memory.
  • portions of the embodiments of the invention may be implemented in hardware, software, firmware or a combination thereof.
  • multiple steps or methods may be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system.
  • a suitable instruction execution system For example, if implemented in hardware, as in another embodiment, it can be implemented by any one or combination of the following techniques well known in the art: having logic gates for implementing logic functions on data signals. Discrete logic circuits, application specific integrated circuits with suitable combinational logic gates, programmable gate arrays (PGAs), field programmable gate arrays (FPGAs), etc.
  • each functional unit in each embodiment of the present invention may be integrated into one processing module, or each unit may exist physically separately, or two or more units may be integrated into one module.
  • the above integrated modules can be implemented in the form of hardware or in the form of software functional modules.
  • the integrated modules, if implemented in the form of software functional modules and sold or used as stand-alone products, may also be stored in a computer readable storage medium.
  • the above mentioned storage medium may be a read only memory, a magnetic disk or an optical disk or the like.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un système (10) cathodique de pulvérisation au moyen de magnétron, le système (10) cathodique de pulvérisation au moyen de magnétron comprenant une cible (12) et une pluralité d'unités de système électromagnétique (14) disposées sur un côté de la cible (12). Chaque unité de système électromagnétique (14) fonctionne indépendamment et peut générer différents effets magnétiques et les lignes de champ magnétique de l'unité de système électromagnétique (14) passent à travers une surface de pulvérisation (122) de la cible (12).
PCT/CN2017/118593 2017-12-26 2017-12-26 Système cathodique de pulvérisation au moyen de magnétron WO2019127006A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/CN2017/118593 WO2019127006A1 (fr) 2017-12-26 2017-12-26 Système cathodique de pulvérisation au moyen de magnétron
CN201780092148.4A CN110770364A (zh) 2017-12-26 2017-12-26 磁控溅射阴极系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2017/118593 WO2019127006A1 (fr) 2017-12-26 2017-12-26 Système cathodique de pulvérisation au moyen de magnétron

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WO2019127006A1 true WO2019127006A1 (fr) 2019-07-04

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102102185A (zh) * 2009-12-22 2011-06-22 北京北方微电子基地设备工艺研究中心有限责任公司 磁控溅射源、磁控溅射装置及其方法
CN103046009A (zh) * 2011-10-13 2013-04-17 鸿富锦精密工业（深圳）有限公司 平面磁控溅射阴极
CN203144509U (zh) * 2013-01-28 2013-08-21 京东方科技集团股份有限公司 一种磁控溅射用磁场源装置
CN105112871A (zh) * 2015-09-17 2015-12-02 京东方科技集团股份有限公司 一种靶材溅射装置及其溅射靶材的方法
CN107779836A (zh) * 2017-12-08 2018-03-09 合肥鑫晟光电科技有限公司 一种磁控溅射装置及其磁场分布调节方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102102185A (zh) * 2009-12-22 2011-06-22 北京北方微电子基地设备工艺研究中心有限责任公司 磁控溅射源、磁控溅射装置及其方法
CN103046009A (zh) * 2011-10-13 2013-04-17 鸿富锦精密工业（深圳）有限公司 平面磁控溅射阴极
CN203144509U (zh) * 2013-01-28 2013-08-21 京东方科技集团股份有限公司 一种磁控溅射用磁场源装置
CN105112871A (zh) * 2015-09-17 2015-12-02 京东方科技集团股份有限公司 一种靶材溅射装置及其溅射靶材的方法
CN107779836A (zh) * 2017-12-08 2018-03-09 合肥鑫晟光电科技有限公司 一种磁控溅射装置及其磁场分布调节方法

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