WO2019124730A1 - Light-emitting diode package and light-emitting module comprising same - Google Patents

Light-emitting diode package and light-emitting module comprising same Download PDF

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Publication number
WO2019124730A1
WO2019124730A1 PCT/KR2018/013441 KR2018013441W WO2019124730A1 WO 2019124730 A1 WO2019124730 A1 WO 2019124730A1 KR 2018013441 W KR2018013441 W KR 2018013441W WO 2019124730 A1 WO2019124730 A1 WO 2019124730A1
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WO
WIPO (PCT)
Prior art keywords
lead frame
light emitting
emitting diode
connecting portion
connection
Prior art date
Application number
PCT/KR2018/013441
Other languages
French (fr)
Korean (ko)
Inventor
김지호
Original Assignee
서울반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020180133807A external-priority patent/KR20190074200A/en
Application filed by 서울반도체주식회사 filed Critical 서울반도체주식회사
Priority to CN201880005501.5A priority Critical patent/CN110383513B/en
Priority to DE212018000299.1U priority patent/DE212018000299U1/en
Publication of WO2019124730A1 publication Critical patent/WO2019124730A1/en
Priority to US16/818,699 priority patent/US11316076B2/en
Priority to US17/711,452 priority patent/US20220223762A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a light emitting diode package and a light emitting module including the same.
  • a light emitting diode package is used as a light source in various fields such as a backlight light source of a display device.
  • a light emitting diode package used as a backlight light source can be roughly divided into a top light emitting diode package and a side view light emitting diode package.
  • the side view light emitting diode package is used in an edge type backlight module, and light is incident on the side of the light guide plate.
  • a light emitting diode package used in an edge type backlight module needs to narrowly emit light in the thickness direction of the light guide plate, that is, in the up and down direction, and to emit light widely in the lateral direction along the edge of the light guide member do.
  • the side view light emitting diode package used in the backlight module has a generally long shape in one direction.
  • both polarity terminal portions are formed on one side. Therefore, the terminals of both polarities have a narrow area and are located close to each other, thereby causing a problem that contact failure occurs between the probe and the terminal during the test.
  • the conventional side view light emitting diode package has a thin and long shape with a bipolar connection portion located on the lower surface. Therefore, it is difficult to secure a sufficient area for electrical connection with an external configuration such as a backlight circuit board or the like.
  • Another object of the present invention is to provide a light emitting diode package in which only one polarity terminal portion is formed on both sides of a package substrate so that probes contacting the polarity terminal portions can be prevented from being shorted together.
  • Another problem to be solved by the present invention is to provide a reliable light emitting module, which is an accurate classification process of a light emitting diode package.
  • a light emitting diode package including a body portion, a first lead frame, and a second lead frame.
  • the body portion has a cavity in its upper portion and has an elongated shape in one direction.
  • the first lead frame is coupled to the bottom of the body portion, and includes a first mounting portion exposed at the cavity, a first terminal portion exposed at one side of the body portion, and a first connection portion exposed at a lower surface of the body portion.
  • the second leadframe is laterally spaced from the first leadframe and joined to the bottom of the body.
  • the second lead frame includes a second mounting portion exposed to the cavity, a second terminal portion exposed at the other side of the body portion along one direction, and a second connection portion exposed at a lower surface of the body portion.
  • the first connecting portion includes a 1-1 connecting portion extending from the first terminal portion and a 1-2 connecting portion extending from the part of the 1-1 connecting portion along the one direction toward the second terminal portion.
  • the second connection portion includes a second-second connection portion extending from the second terminal portion and a second-second connection portion extending from the portion of the second-first connection portion toward the first terminal portion along one direction.
  • a light emitting module including the circuit board and the light emitting diode package mounted on the circuit board.
  • the light emitting diode package emits light on one side of the light guide plate.
  • the light emitting diode package and the light emitting module including the light emitting diode package have only one polarity terminal portion on both sides of the package substrate, so that the terminal portion has a large area to prevent the contact failure between the probe and the terminal portion .
  • the light emitting diode package can prevent the probes contacting the terminal portions of both polarities from being shorted together.
  • the package substrate can prevent the contact failure between the terminal portion and the probe and the short-circuit between the probes, so that the reliability of the reliable light emitting diode package sorting process can be improved.
  • FIG. 1 to 3 are views showing an example of a package substrate according to a first embodiment of the present invention.
  • FIG 4 and 5 are views showing an example of a package substrate according to a second embodiment of the present invention.
  • 6 to 8 are diagrams for explaining a light emitting diode package according to an embodiment of the present invention.
  • FIG 9 and 10 are views showing an LED package according to another embodiment of the present invention.
  • FIG. 11 is an exemplary view illustrating a light emitting module according to an embodiment of the present invention.
  • FIGS. 12 to 21 are illustrations showing a package substrate according to a third embodiment of the present invention.
  • 22 to 24 illustrate an LED package according to another embodiment of the present invention.
  • the light emitting diode package includes a body portion, a first lead frame, and a second lead frame.
  • the body portion has a cavity in its upper portion and has an elongated shape in one direction.
  • the first lead frame is coupled to the bottom of the body portion, and includes a first mounting portion exposed at the cavity, a first terminal portion exposed at one side of the body portion, and a first connection portion exposed at a lower surface of the body portion.
  • the second leadframe is laterally spaced from the first leadframe and joined to the bottom of the body.
  • the second lead frame includes a second mounting portion exposed to the cavity, a second terminal portion exposed at the other side of the body portion along one direction, and a second connection portion exposed at a lower surface of the body portion.
  • the first connecting portion includes a 1-1 connecting portion extending from the first terminal portion and a 1-2 connecting portion extending from the part of the 1-1 connecting portion along the one direction toward the second terminal portion.
  • the second connection portion includes a second-second connection portion extending from the second terminal portion and a second-second connection portion extending from the portion of the second-first connection portion toward the first terminal portion along one direction.
  • the 1-2 connecting portion and the 2-2 connecting portion are arranged parallel to each other.
  • At least one of the first connecting portion and the second connecting portion crosses a center line perpendicular to one direction.
  • a part of the 1-1 connection part has a larger width than the other part, and a part of the 1-1 connection part includes a part extending from the first terminal part. Further, another part of the 1-1 connecting portion includes a portion where the 1-2 connecting portion extends.
  • a part of the second-1 connection part has a larger width than the other part, and a part of the second-1 connection part includes a part extending from the second terminal part. Further, another portion of the second-second connecting portion includes a portion where the second-second connecting portion extends.
  • the cavity of the body increases in width from the lower part to the upper part.
  • the first lead frame may further include a first through hole passing through the first lead frame. Further, a part of the body portion is located in the first through hole.
  • the width of the upper portion of the first through hole is smaller than the width of the lower portion.
  • the second lead frame may further include a second through hole passing through the second lead frame. Further, a part of the body portion is located in the second through hole.
  • the width of the upper portion of the second through hole is smaller than the width of the lower portion.
  • the first lead frame may further include a first groove portion which is a groove formed concavely on the upper surface.
  • the first groove portion may be filled with the body portion.
  • the second lead frame may further include a second groove portion which is a groove formed concavely on the upper surface.
  • the second groove portion is filled with the body portion.
  • the separation distance between the 1-2 connection portion and the 2-1 connection portion and the separation distance between the 2-2 connection portion and the 1-1 connection portion may be larger than the separation distance between the 1-2 connection portion and the 2-2 connection portion.
  • the distance between the 1-2 connecting portion and the 2-1 connecting portion and the distance between the 2-2 connecting portion and the 1-1 connecting portion are set to be the distance between the 1-2 connecting portion and the side surface of the body portion, May be smaller than the separation distance between the side surfaces of the body portion.
  • the first mounting portion and the second mounting portion may have a long structure along one direction.
  • the light emitting diode package may further include a light emitting diode chip disposed in the cavity of the body portion and electrically connected to the first mounting portion and the second mounting portion, and a sealing member filled in the cavity to surround the light emitting diode chip.
  • the light emitting diode chip includes an elongated substrate in one direction, a light emitting structure, a first bump pad, and a second bump pad.
  • the light emitting structure includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially stacked from the bottom surface of the substrate.
  • the first bump pad is electrically connected to the first conductive semiconductor layer.
  • the second bump pad is laterally spaced apart from the first bump pad and is electrically connected to the second conductive semiconductor layer.
  • the first bump pad and the second bump pad are elongated along one direction of the substrate. Further, the first bump pad is located above the first mounting portion, and the second bump pad is located above the second mounting portion.
  • a light emitting module comprising a circuit board and a light emitting diode package mounted on the circuit board.
  • the light emitting diode package emits light on one side of the light guide plate.
  • the circuit board includes a first region in which a light emitting diode package is disposed and a circuit pattern is formed on an upper surface thereof, and a second region perpendicular to the first region.
  • the light emitting module is connected to the circuit board of the first area of the circuit board by the first connecting part and the second connecting part located on the lower surface of the light emitting diode package. Further, the light emitting module faces one side of the light guide plate with the upper surface on which light is emitted from the light emitting diode package.
  • the light emitting diode package may be plural.
  • FIG. 1 to 3 are views showing an example of a package substrate according to a first embodiment of the present invention.
  • FIG. 1 is a cross-sectional view of a package substrate according to a first embodiment
  • FIG. 2 is a bottom plan view of a package substrate according to the first embodiment
  • FIG. 3 is a top plan view of the package substrate according to the first embodiment.
  • the package substrate 100 includes a first lead frame 110, a second lead frame 120, and a body portion 130.
  • the body 130 surrounds the first lead frame 110 and the second lead frame 120 and supports the first lead frame 110 and the second lead frame 120 so as to be spaced apart from each other.
  • the body portion 130 is formed of a thermosetting resin.
  • the body portion 130 has an elongated shape along one direction.
  • the body portion 130 includes side surfaces including long sides in one direction and side surfaces including short sides in the other direction.
  • the body portion 130 may be in the form of a rectangle having two long sides facing each other and two short sides facing each other.
  • a cavity 131 in which a light emitting diode chip (not shown) is received, is formed on an upper portion of the body portion 130.
  • the cavity 131 has a tapered structure having a larger width from the lower part to the upper part.
  • the cavity 131 is not limited to this, and the cavity 131 may have a structure in which the widths of the upper portion and the lower portion are the same.
  • the first lead frame 110 and the second lead frame 120 are coupled to the bottom of the body portion 130.
  • the first lead frame 110 and the second lead frame 120 are disposed to be laterally spaced from each other in the body portion 130 and insulated from each other by the body portion 130.
  • the first lead frame 110 includes a first mounting portion 111, a first groove portion 112, a first terminal portion 113, and a first connecting portion 114.
  • a first mounting portion 111 and a first groove portion 112 are formed on an upper surface of the first lead frame 110.
  • the first trench 112 is half-etched on the top surface of the first lead frame 110 and is formed in a concave structure from the top surface.
  • the first groove portion 112 is filled with the body portion 130.
  • the bonding area between the body part 130 and the first lead frame 110 is increased by the first trench 112 and the bonding force between the first lead frame 110 and the body part 130 is improved.
  • the penetration path from the side of the first body part 130 to the inside of the cavity 131 is increased by the first groove part 112 to prevent foreign substances such as moisture from penetrating into the cavity 131 have.
  • the first mounting portion 111 is exposed in the cavity 131.
  • the first mounting portion 111 is a portion where the light emitting diode chip (not shown) is mounted on the first lead frame 110 and is electrically connected.
  • the first trench 112 is formed along the periphery of the first mounting portion 111. Therefore, the first mounting portion 111 protrudes upward from the first groove portion 112 filled with the body portion 130, so that the first mounting portion 111 is exposed from the bottom surface of the cavity 131.
  • the first mounting portion 111 may be formed long along one side including a long side of the body portion 130.
  • the side surface of the first lead frame 110 protrudes outward from one side of the body portion 130.
  • the first terminal portion 113 includes a side surface of the first lead frame 110 exposed at one side of the body portion 130. That is, the first terminal portion 113 is a side surface of the first lead frame 110 protruding from one side of the body portion 130.
  • One side of the body part 130 is one side including a short side of the body part 130.
  • the first connection part 114 is exposed on the lower surface of the body part 130.
  • the first connection part 114 is a part electrically connected to an external component such as a circuit board.
  • the first connection part 114 includes a 1-1 connection part 115 and a 1-2 connection part 116.
  • the 1-1 connection portion 115 is connected to the first terminal portion 113. According to the present embodiment, since the 1-1 connection portion 115 extends from the first terminal portion 113, it may have the same or similar width as the first terminal portion 113. 1 to 3, since the first terminal portion 113 is a side surface protruding from one side of the body portion 130 in the first lead frame 110, 1 < / RTI > That is, the 1-1 connection portion 115 is not limited to the body portion 130 but has a large area extending to an outer region of the body portion 130.
  • the 1-2 connecting portion 116 extends from a part of the 1-1 connecting portion 115 and is formed in a long structure. At this time, the 1-2 connection portion 116 extends in the direction of the second terminal portion 123 located in the direction opposite to the first terminal portion 113 in the 1-1 connection portion 115. Referring to FIG. 3, the 1-2 connecting portion 116 has a smaller width than the 1-1 connecting portion 115.
  • the first connection unit 114 is divided into the 1-1 connection unit 115 and the 1-2 connection unit 116 for convenience of description, and they are integrally connected to each other.
  • the second lead frame 120 includes a second mounting portion 121, a second groove portion 122, a second terminal portion 123, and a second connecting portion 124.
  • a second mounting portion 121 and a second groove portion 122 are formed on the upper surface of the second lead frame 120.
  • the second trench 122 is half-etched of the second lead frame 120 and is formed in a concave structure from the top surface.
  • the second groove portion 122 is filled with the body portion 130.
  • the bonding area between the body part 130 and the second lead frame 120 is increased by the second groove part 122 and the bonding force between the second lead frame 120 and the body part 130 is improved.
  • the second groove portion 122 increases the path for the foreign substance such as moisture to penetrate into the cavity 131.
  • the first groove 112 and the second groove 122 are located outside the cavity 131 of the body 130.
  • the first groove portion 112 and the second groove portion 122 do not necessarily have to be located outside the cavity 131.
  • the positions of the first groove portion 112 and the second groove portion 122 can be changed as needed.
  • the second mounting portion 121 is exposed in the cavity 131.
  • the second mounting portion 121 is a portion where the light emitting diode chip (not shown) is mounted on the second lead frame 120 and is electrically connected.
  • a second groove portion 122 is formed along the periphery of the second mounting portion 121.
  • the second mounting portion 121 protrudes upward from the second groove portion 122 filled with the body portion 130 and is exposed at the bottom surface of the cavity 131.
  • the second mounting portion 121 may be formed long along the other side including the long side of the body portion 130.
  • the second mounting portion 121 thus formed is disposed to be laterally spaced apart from the first mounting portion 111.
  • first mounting portion 111 and the second mounting portion 121 are spaced apart from each other, but the present invention is not limited thereto.
  • the structure of the first mounting portion 111 and the second mounting portion 121 may be changed according to the structure of the light emitting diode chip to be accommodated in the cavity 131.
  • the side surface of the second lead frame 120 protrudes outward from the other side including the short side of the body part 130.
  • the second terminal portion 123 includes a side surface of the second lead frame 120 exposed from the other side of the body portion 130. In other words, the second terminal portion 123 is a side surface of the second lead frame 120 protruding from the other side of the body portion 130.
  • the first terminal portion 113 protrudes from one side of the body portion 130 and is formed along one side of the body portion 130.
  • the second terminal portion 123 protrudes from the other side of the body portion 130 and is formed along the other side of the body portion 130.
  • the first terminal portion 113 and the second terminal portion 123 formed to protrude laterally from one side surface and the other side surface of the body portion 130 can reflect light.
  • a part of the light from the backlight unit toward the light guide plate (not shown) can be reflected by the light guide plate and directed toward the circuit board (not shown).
  • the package substrate 100 of this embodiment when the package substrate 100 of this embodiment is applied to the backlight unit, the light directed toward the circuit board is reflected by the first terminal portion 113 and the second terminal portion 123 protruding to the outside, Lt; / RTI > That is, the package substrate 100 according to the present embodiment prevents the light reflected by the light guide plate from being absorbed between the package and the package, and reflects the light to be incident on the light guide plate.
  • the package substrate 100 according to the embodiment of the present invention is applied to the backlight unit, and it is possible to prevent the occurrence of a dark spot on the light guide plate between the package and the package.
  • the terminal portions are all disposed, and each of the terminal portions is formed to have a narrow width. That is, the area of the terminal portion of the conventional package substrate is not sufficient. Therefore, in a sorting process for distinguishing a defective product and a good product from a package substrate or a light emitting diode package, a defective product may be discriminated as a defective product due to poor contact between the probe and the terminal portion.
  • the package substrate 100 may be configured such that the first terminal portion 113 and the second terminal portion 123 are electrically connected to each other through a probe when the package substrate 100 or the LED package is tested Can be used as a part.
  • the first terminal portion 113 since only the first terminal portion 113 is disposed on one side of the body portion 130, the first terminal portion 113 can be formed in a wide area.
  • the second terminal portion 123 since only the second terminal portion 123 is disposed on the other side of the body portion 130, the second terminal portion 123 can be formed in a wide area. Since the package substrate 100 has only one terminal portion on one side of the body portion 130, it has a larger area than the terminal portion of the package substrate conventionally.
  • the package substrate 100 of the embodiment of the present invention since the area of the terminal portion in contact with the probe is sufficient, the contact failure between the probe and the terminal portion can be prevented. Thereby preventing errors in the test including the sorting process performed on the package substrate or the light emitting diode package, thereby improving the test reliability.
  • the second connection part 124 is exposed at the lower surface of the body part 130.
  • the second connection portion 124 includes the second-first connection portion 125 and the second-second connection portion 126.
  • the second-second connecting portion 125 is connected to the second terminal portion 123. According to this embodiment, since the second-second connecting portion 125 extends from the second terminal portion 123, it may have the same or similar width as the second terminal portion 123. Like the 1-1 connection portion 115, the 2-1 connection portion 125 is not limited within the body portion 130 but may be formed in a wide area extending to the outer region of the body portion 130 .
  • the second-second connecting portion 126 extends from a part of the second-first connecting portion 125 and is formed in a long structure. At this time, the second-second connecting portion 126 extends from the second-first connecting portion 125 toward the first terminal portion 113. Referring to FIG. 3, the second-second connecting portion 126 has a smaller width than the second-type connecting portion 125.
  • the 1-2 connecting portion 116 and the 2-2 connecting portion 126 are disposed in parallel with each other. Also, at least one of the first-second connecting portion 116 and the second-second connecting portion 126 crosses a center line perpendicular to one direction.
  • connection portion is located in the inner region of the body portion and is formed in a narrow and narrow structure.
  • the package substrate 100 according to the embodiment of the present invention has a large width and has a first connecting portion 115 and a second connecting portion 125 extending to the outer region of the body portion 130, And a long second 1-2 connection portion 116 and a second-second connection portion 126. Therefore, the package substrate 100 according to the embodiment of the present invention has a wider area than that of the conventional package substrate, so that stable and reliable electrical connection with the external structure is possible.
  • the package substrate 100 of the present invention since the package substrate 100 of the present invention has only one terminal portion of one polarity per side, it is easy to stably electrically connect to the external structure through the side surface.
  • the package substrate 100 of the present invention includes a first connection part 114 and a second connection part 124 located on the lower surface and a first terminal part 113 and a second terminal part 123 formed on the side surface, For example. That is, the package substrate 100 is electrically connectable with the external configuration through a wider area including a lower surface and a side surface.
  • both terminals of both polarities are located on both sides of the package substrate. Therefore, when the probes are in contact with the terminals of both polarities on one side, they can be short-circuited. Since the package substrate 100 according to the embodiment of the present invention has only one terminal of polarity on one side, it can be prevented that the probe is short-circuited when the terminal contacts the terminals of both polarities.
  • the strength of the central portion of the package substrate 100 since at least one of the first connecting portion 114 and the second connecting portion 124 crosses a center line perpendicular to one direction, the strength of the central portion of the package substrate 100 .
  • the 1-1 connection portion 115 and the 2-1 connection portion 125 are formed so that a part thereof has a larger width than the other part.
  • the portion having a large width at the 1-1 connection portion 115 includes a portion extending from the first terminal portion 113 and the portion having a large width at the 2-1 connection portion 125 includes the second terminal portion 123, As shown in FIG.
  • the portion having a small width at the 1-1 connecting portion 115 includes a portion at which the 1-2 connecting portion 116 extends, and a portion having a small width at the 2-1 connecting portion 125 includes a portion -2 connection portion 126 is extended.
  • first extended portion 117 and the second extended portion 127 describe a portion of the 1-1 connecting portion 115 and the 2-1 connecting portion 125, . 2, the first connecting part 114 and the other part of the second connecting part 124 except for the first extending part 117 and the second extending part 127 are both connected to the first extending part 117 and the second connecting part 124, 2 extension portion 127 of the first embodiment.
  • the side surfaces of the first extension portion 117 and the second extension portion 127 are cut in a separation process for separating a plurality of lead frames connected to each other.
  • the cutting edge swings one side of each of the first and second leadframes 110 and 120 A burr may occur. That is, the first extension portion 117 and the second extension portion 127 prevent the portion other than the first extension portion 117 and the second extension portion 127 from contacting the cutting edge in the lead frame separation process It is possible to prevent occurrence of burrs.
  • the first extension portion 117 and the second extension portion 127 are connected to the first terminal portion 113 and the second terminal portion 123 so that a part thereof protrudes from both sides of the body portion 130. Accordingly, the first extension portion 117 and the second extension portion 127 can also function to reflect light together with the first terminal portion 113 and the second terminal portion 123. [ As described above, the first extension portion 117 and the second extension portion 127 can be formed so as to prevent burrs in the lead frame separation process and to have a width capable of reflecting as much light as possible.
  • the separation distance between the 1-2 connection 116 and the 2-1 connection 125, the 2-2 connection 126, and the 1-1 connection 115 is the first 2 connection portion 116 and the second-second connection portion 126.
  • the 1-1 connecting portion 115 and the 2-1 connecting portion 125 have a large area, when the package substrate 100 is bonded to the external structure, a large amount of adhesive is applied. At this time, when the amount of the adhesive increases, the adhesive flows to the outer region of the 1-1 connection portion 115 and the 2-1 connection portion 125 when the package substrate 100 is pressed in an external configuration Can come out. At this time, the 1-1 connection portion 115 and the 2-2 connection portion 126 may be electrically connected to each other, or the 2-1 connection portion 125 and the 1-2 connection portion 116 may be electrically connected to each other.
  • the second-second connecting portion 116 and the second-second connecting portion 126 are formed on the basis of the separation distance to the extent that the second- 1 connection section 125 and the 2-2 connection section 126 and the 1-1 connection section 115 must have a greater distance from each other.
  • the second-first connecting portion 116, the second-second connecting portion 125, the second-second connecting portion 126, and the first connecting portion 115 are separated from each other by too large a distance, The size increases. Accordingly, in order to prevent the package substrate 100 from becoming larger or longer, the second-first connecting portion 116, the second-second connecting portion 125, the second-second connecting portion 126, The distance between the second-second connecting portion 126 and the side surface of the body portion 130 should be smaller than the distance between the first-second connecting portion 116 and the side surface of the body portion 130.
  • FIG 4 and 5 are views showing an example of a package substrate according to a second embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of the package substrate according to the second embodiment
  • FIG. 5 is a bottom plan view of the package substrate according to the second embodiment.
  • the package substrate 200 according to the second embodiment has a first through hole 211 formed in the first lead frame 210 and a second through hole 211 formed in the second lead frame 220 A through hole 221 is formed.
  • the first through hole 211 is formed between the first groove portion 112 of the first lead frame 210 and the first terminal portion 113 and is formed to penetrate from the upper surface to the lower surface of the first lead frame 210 .
  • the second through hole 221 is formed between the second groove part 122 and the second terminal part 123 of the second lead frame 220 and penetrates from the upper surface to the lower surface of the second lead frame 220 .
  • the first through hole 211 passing through the first lead frame 210 and the second through hole 221 passing through the second lead frame 220 are filled with the body portion 130.
  • the bonding areas between the first lead frame 210 and the second lead frame 220 and the body part 130 are increased by the first through holes 211 and the second through holes 221 to improve the bonding force between the first and second lead frames 220 and 220 .
  • the first through holes 211 and the second through holes 221 may have a stepped structure in which the upper and lower portions have the same width or the widths of the upper portion and the lower portion are different from each other.
  • the first through holes 211 and the second through holes 221 may have a top width smaller than a bottom width as shown in FIG.
  • the body portion 130 filled in the lower portion of the first through hole 211 is hooked on the upper portion of the first through hole 211 having a small width, so that the body portion 130 is fixed to the first lead frame 210 .
  • the upper portion of the second through hole 221 is narrower than the lower portion of the second through hole 221, the body portion 130 may be fixed to the second lead frame 220.
  • the package substrate 200 having the first through holes 211 and the second through holes 221 having the above-described structure has the body portion 130, the first lead frame 210 and the second lead frame 220, More robust coupling between the two is possible.
  • 6 to 8 are diagrams for explaining a light emitting diode package according to an embodiment of the present invention.
  • FIG. 6 is an exemplary view illustrating a light emitting diode package according to an embodiment of the present invention.
  • 7 is a bottom plan view of the light emitting diode chip mounted on the light emitting diode package, and
  • FIG. 8 is a sectional view of the light emitting diode chip.
  • the light emitting diode package 300 includes a package substrate 200, a light emitting diode chip 400, and a sealing member 310.
  • the package substrate 200 shown in Fig. 6 is the package substrate of the second embodiment.
  • the package substrate 200 is not limited to the package substrate of the second embodiment, and may be the package substrate of the first embodiment.
  • the light emitting diode chip 400 is disposed in the cavity 131 of the package substrate 200.
  • the light emitting diode chip 400 may have a structure in which bump pads (not shown) having both polarities are formed on the lower surface.
  • the bump pad of the light emitting diode chip 400 may have a structure corresponding to the first mounting portion 111 and the second mounting portion 121 of the package substrate 200.
  • a light emitting diode chip 400 includes a substrate 410, a light emitting structure 420, an ohmic reflective layer 430, a first insulating layer 440, A second pad metal layer 452, a second insulating layer 460, a first bump pad 470, and a second bump pad 480.
  • the light emitting diode chip 400 having the above-described structure has a long structure in one direction with a lower edge and a shorter edge.
  • the long side is the longer side of the lower frame, and the shorter side is the shorter side than the long side.
  • the substrate 410 is not particularly limited as long as the substrate can grow the gallium nitride-based semiconductor layer.
  • the substrate 410 may be a sapphire substrate, a gallium nitride substrate, a SiC substrate, or the like, and may be a patterned sapphire substrate.
  • the substrate 410 has a rectangular shape with long sides and short sides.
  • a light emitting structure 420 is formed under the substrate 410.
  • the light emitting structure 420 includes a first conductive semiconductor layer 421, an active layer 422, and a second conductive semiconductor layer 423.
  • the first conductive semiconductor layer 421 is formed under the substrate 410.
  • the first conductive semiconductor layer 421 may be a layer grown on the substrate 410 and may be a gallium nitride semiconductor layer.
  • the first conductivity type semiconductor layer 421 may be an n-type impurity, for example, a silicon-doped gallium nitride semiconductor layer.
  • a mesa M is disposed under the first conductive semiconductor layer 421.
  • the mesa M may be located in the region of the first conductivity type semiconductor layer 421. Accordingly, the edge regions of the first conductivity type semiconductor layer can be exposed to the outside without being covered by the mesa M.
  • the mesa M may include a part of the first conductivity type semiconductor layer 421.
  • the mesa M includes a second conductivity type semiconductor layer 423 and an active layer 422.
  • the active layer 422 is formed under the first conductivity type semiconductor layer 421 and the second conductivity type semiconductor layer 423 is formed under the active layer 422.
  • the active layer 422 may have a single quantum well structure or a multiple quantum well structure.
  • the composition and thickness of the well layer in the active layer 422 determine the wavelength of the generated light. In particular, by controlling the composition of the well layer, it is possible to provide an active layer that generates ultraviolet light, blue light or green light.
  • the second conductivity type semiconductor layer 423 may be a p-type impurity, for example, a gallium nitride-based semiconductor layer doped with Mg.
  • the first conductive semiconductor layer 421 and the second conductive semiconductor layer 423 may each be a single layer, but the present invention is not limited thereto.
  • the first conductivity type semiconductor layer 421 and the second conductivity type semiconductor layer 423 may be multilayered or may include a superlattice layer.
  • the first conductivity type semiconductor layer 421, the active layer 422 and the second conductivity type semiconductor layer 423 may be formed by a known method such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) And may be formed on the substrate 410 by being grown.
  • MOCVD metal organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • the mesa M has a side inclined so that the area becomes narrower as the distance from the first conductivity type semiconductor layer 421 decreases.
  • the layers covering the side surfaces of the mesa M can be stably formed.
  • the mesa M may have an elongated rectangular shape along the shape of the substrate 410 and may include a groove exposing the first conductive semiconductor layer 421 along the longitudinal direction of the substrate 410 .
  • the groove can pass the center of the mesa M along the long side of the substrate 410 at the short side center of the mesa M adjacent to one side short side of the substrate as shown in Fig.
  • the length of the groove is shorter than the length of the long side of the mesa (M), so that the other short side of the mesa (M) is spaced from the groove.
  • the ohmic reflective layer 430 is formed under the second conductive type semiconductor layer 423 and is in contact with the second conductive type semiconductor layer 423.
  • the ohmic reflective layer 430 may be disposed over substantially the entire region of the mesa in the mesa (M) upper region. 8, the ohmic reflective layer 430 is not arranged to cover the entire mesa M upper region.
  • the ohmic reflective layer 430 may cover more than 80% of the mesa M upper region. Further, the ohmic reflective layer 430 may cover 90% or more of the upper region of the mesa M.
  • An ohmic oxide layer may be further formed to cover the mesa M in the vicinity of the ohmic reflective layer 430 in the upper region of the mesa M.
  • an ohmic oxide layer (not shown) is disposed around the ohmic reflective layer 430, the ohmic contact region is widened, so that the forward voltage of the light emitting diode can be lowered.
  • the ohmic reflective layer 430 may include a reflective metal layer. Accordingly, the OMR reflective layer 430 can reflect light that is generated in the active layer 422 and proceeds to the OMR reflective layer 430 to be directed to the substrate 410.
  • the ohmic reflective layer 430 may be formed of a single metal layer or may include an ohmic layer and a reflective layer.
  • the ohmic layer may be formed of a metal such as Ni
  • the reflective layer may be formed of a metal having high reflectance such as Ag or Al.
  • the ohmic reflective layer 430 may include a barrier layer.
  • the barrier layer may be composed of Ni, Ti, and Au.
  • the ohmic reflective layer may be a stacked structure of Ni / Ag / Ni / Ti / Ni / Ti / Au / Ti.
  • the ohmic reflective layer 430 may include a transparent oxide layer that is in ohmic contact with the second conductive semiconductor layer 423, an insulating layer that covers the transparent oxide layer but has an opening that exposes the transparent oxide layer, And a metal reflection layer which is connected to the transparent oxide layer through the opening of the insulating layer.
  • the first insulating layer 440 covers the mesa M and the ohmic reflective layer 430.
  • the first insulating layer 440 may cover the mesa M side.
  • the first insulating layer 440 may cover a part of the first conductivity type semiconductor layer 421 exposed from the side of the mesa M.
  • the first insulating layer 440 thus formed exposes the first conductivity type semiconductor layer 421 located along the periphery of the mesa M.
  • At least one opening 441 for exposing the OMR layer 430 is formed in the first insulating layer 440.
  • the opening 441 formed in the first insulating layer 440 is formed below the mesa M where the second pad metal layer 452 is to be formed later.
  • the second pad metal layer 452 and the second conductivity type semiconductor layer 423 are connected through the opening 441 and electrically connected to each other.
  • the first insulating layer 440 may be formed of a single layer of SiO2 or Si3N4. However, the first insulating layer 440 is not limited thereto.
  • the first insulating layer 440 may have a multilayer structure including a silicon nitride film and a silicon oxide film, and may include a distributed Bragg reflector in which a silicon oxide film and a titanium oxide film are alternately laminated.
  • the first pad metal layer 451 is formed under the first insulating layer 440 and a part of the first conductive semiconductor layer 421 exposed by the first insulating layer 440.
  • the first pad metal layer 451 is insulated from the mesa M and the ohmic reflective layer 430 by a first insulating layer 440.
  • the first pad metal layer 451 thus formed is in contact with the first conductivity type semiconductor layer 421 and is electrically connected to each other.
  • the second pad metal layer 452 is formed on the lower portion of the first insulating layer 440 having the opening 441 and the opening 441 and is spaced apart from the first pad metal layer 451.
  • the second pad metal layer 452 thus formed is electrically connected to the ohmic reflective layer 430 through the opening 441.
  • the first pad metal layer 451 and the second pad metal layer 452 may be formed together with the same material in the same process.
  • the first pad metal layer 451 and the second pad metal layer 452 may include an ohmic reflective layer such as an Al layer and the ohmic reflective layer may be formed under an adhesive layer such as Ti, Cr, or Ni. Further, a protective layer of a single layer or a multiple layer structure such as Ni, Cr, Au or the like may be formed under the ohmic reflective layer.
  • the first pad metal layer 451 and the second pad metal layer 452 may have a multi-layer structure of Cr / Al / Ni / Ti / Ni / Ti / Au / Ti.
  • the second insulating layer 460 is formed to cover the first pad metal layer 451 and the second pad metal layer 452.
  • the second insulating layer 460 may cover the first conductive semiconductor layer 421 exposed along the periphery of the mesa M. [ At this time, the second insulating layer 460 may expose the first conductive type semiconductor layer 421 located at the edge of the substrate 410.
  • the second insulating layer 460 includes a first opening 461 for exposing the first pad metal layer 451 and a second opening 462 for exposing the second pad metal layer 452.
  • the first opening 461 and the second opening 462 may be disposed in the lower region of the mesa M.
  • the first opening 461 and the second opening 462 of the second insulating layer 460 are spaced apart from each other, and are formed long along the long side of the substrate 410. At least one of the first opening 461 and the second opening 462 may be formed to cross the center line C.
  • the center line C is a line passing through the center of the lower surface, parallel to the shorter sides of the lower surface of the light emitting diode chip 400 or the substrate 410. That is, the center line C is a line extending from the center to the long side of both the short sides of the light emitting diode chip. 7, both the first opening 461 and the second opening 462 are formed to cross the center line C.
  • the second insulating layer 460 may be formed of a single layer of SiO 2 or Si 3 N 4, but is not limited thereto.
  • the second insulating layer 460 may have a multilayer structure including a silicon nitride film and a silicon oxide film, and may include a distributed Bragg reflector in which a silicon oxide film and a titanium oxide film are alternately laminated.
  • the first bump pad 470 and the second bump pad 480 are formed on the first pad metal layer 451 and the second pad metal layer 452 respectively and are formed to protrude downward from the second insulating layer 460 .
  • the first bump pad 470 is formed under the first pad metal layer 451 exposed by the first opening 461 of the second insulating layer 460.
  • the first bump pad 470 thus formed is electrically connected to the first conductive type semiconductor layer 421 through the first pad metal layer 451.
  • the second bump pad 480 is formed below the second pad metal layer 452 exposed by the second opening 462 of the second insulating layer 460.
  • the second bump pad 480 thus formed is electrically connected to the second conductive semiconductor layer 423 through the second pad metal layer 452 and the ohmic reflective layer 430.
  • the second pad metal layer 452 may be omitted. At this time, the second bump pad 480 may directly contact the ohmic reflective layer 430.
  • the lower portions of the first bump pad 470 and the second bump pad 480 may be formed to have a greater width than the upper portion to cover a portion of the lower surface of the second insulating layer 460 .
  • the first bump pad 470 and the second bump pad 480 thus formed are formed to cover the lower surface of the second insulating layer 460 so that the first bump pad 470 and the second bump pad 480 can have a large adhesion area adhered to the external structure. Therefore, a reliable connection between the light emitting diode chip 400 and the external configuration is possible.
  • the light emitting diode chip 400 includes the first bump pad 470 and the second bump pad 480 covering the lower surface of the second insulating layer 460.
  • the structure of the light emitting diode chip 400 is not limited thereto.
  • the first bump pad 470 and the second bump pad 480 are defined on the first pad metal layer 451 exposed by the first opening 461 and the second opening 462, can do.
  • the first bump pad 470 and the second bump pad 480 are formed along the first opening 461 and the second opening 462 of the second insulating layer 460. Accordingly, the first bump pad 470 is disposed along one long side of the light emitting diode chip 400.
  • the second bump pads 480 are arranged long along the other long sides of the light emitting diode chip 400. That is, the first bump pads 470 and the second bump pads 480 are spaced apart from each other in the transverse direction and arranged long along both long sides of the LED chip 400. Referring to FIG. 7, both the first bump pad 470 and the second bump pad 480 have a length that crosses the center line C.
  • the first bump pad 470 and the second bump pad 480 are formed of a conductive material.
  • the first bump pad 470 and the second bump pad 480 may be formed of a single metal layer made of Au or TiN, or a multilayered metal layer in which an Au layer and a TiN layer are laminated.
  • the material of the first bump pad 470 and the second bump pad 480 is not limited thereto, and may be formed of any of the conductive metals.
  • the light emitting diode chip 400 can prevent a problem of bending or breaking on the basis of the center line .
  • both the first bump pad 470 and the second bump pad 480 are formed to cross the center line C, but the structure of the first bump pad 470 and the second bump pad 480 May be changed according to the structure of the first mounting portion 111 and the second mounting portion 121 of the package substrate 200.
  • the light emitting diode chip 400 is electrically connected to the package substrate 200 through the conductive adhesive agent between the bump pads of the light emitting diode chip 400 and the first and second mounting portions 111 and 121 of the package substrate 200 ).
  • the light emitting diode chip 400 may include a first mounting portion 111 and a second mounting portion formed by a long bump pad 470 and a second bump pad 480 formed on the package substrate 200, 121 to the package substrate 200 and then adhered thereto.
  • the sealing member 310 is filled in the cavity 131 of the package substrate 200 to cover the light emitting diode chip 400.
  • the sealing member 310 seals the cavity 131 to prevent moisture, dust, etc. from penetrating into the inside of the LED package 300 from the outside.
  • the sealing member 310 may be formed of an epoxy resin or a silicone resin.
  • the sealing member 310 may further include a phosphor or a diffusing agent capable of changing the wavelength of light of the light emitting diode chip 400, if necessary.
  • the light emitting diode package 300 Since the first lead frame 210 and the second lead frame 220 are formed so as to cross the center line C, the light emitting diode package 300 according to the present embodiment is improved in strength do. Therefore, even if the light emitting diode package 300 is formed in a long structure, it can be prevented from being bent or broken, thereby improving the reliability of the product on which the light emitting diode package 300 and the light emitting diode package 300 are mounted.
  • FIG 9 and 10 are views showing an LED package according to another embodiment of the present invention.
  • 9 is a cross-sectional view of a light emitting diode package according to another embodiment.
  • 10 is a top plan view of a light emitting diode package according to another embodiment.
  • the light emitting diode package 500 includes a package substrate 200, a light emitting diode chip 400, a zener diode chip 520, and a sealing member 310.
  • the package substrate 530 has a structure in which a first zener connecting portion 511 and a second zener connecting portion 512 are further formed on the package substrate 100 of Figs. 1 to 3 of the first embodiment.
  • the package substrate 530 may have a structure in which a first zener connecting portion 511 and a second zener connecting portion 512 are further formed on the package substrate (200 in Figs. 4 and 5) of the second embodiment.
  • the first zener connecting portion 511 is formed on the upper surface of the first lead frame 540.
  • the first zener connecting portion 511 is located between the first groove 112 of the first lead frame 540 and the cavity 131 of the body portion 130.
  • the second zener connecting portion 512 is formed on the upper surface of the second lead frame 550.
  • the second jener coupling part 512 is positioned between one end of the second mounting part 121 of the second lead frame 550 in the direction in which the first terminal part 113 is formed and the cavity 131 of the body part 130 .
  • first zener connecting portion 511 and the second zener connecting portion 512 are formed to be laterally spaced from each other.
  • the Zener diode chip 520 is mounted on the first and second Zener connection portions 511 and 512 formed as described above and the first and second Zener connection portions 511 and 512 are connected to the Zener diode chip 520 At this time, the Zener diode chip 520 is connected in parallel to the LED chip 400.
  • the light emitting diode package 500 may include a light emitting diode chip 400 as well as a zener diode chip 520 mounted therein so that the light emitting diode chip 400 and the zener diode chip 520 are connected to the same lead And are electrically connected by a frame. Therefore, it is possible to prevent the LED chip 400 and the Zener diode chip 520 from being short-circuited by the external environment when they are separately packaged and then connected through a separate circuit board.
  • the light emitting diode package 500 according to the embodiment of the present invention is smaller in area consumption than when the light emitting diode chip 400 and the zener diode chip 520 are individually packaged, .
  • FIG. 11 is an exemplary view illustrating a light emitting module according to an embodiment of the present invention.
  • the light emitting module 10 includes a circuit board 11 and a light emitting diode package 300.
  • the light emitting diode package 300 is a light emitting diode package according to the embodiment illustrated in FIG.
  • the light emitting diode package 300 is described in detail with reference to FIG.
  • the light emitting diode package 300 is mounted on the circuit board 11.
  • a wiring electrically connected to the mounted light emitting diode package 300 is formed on the circuit board 11.
  • the circuit board 11 may be a printed circuit board or a flexible printed circuit board having wiring on the insulating layer.
  • the circuit board 11 may be a metal substrate on which wiring is formed in an insulating layer formed on the surface of the metal layer.
  • the circuit board 11 may be a synthetic resin substrate such as resin or glass epoxy, or a ceramic substrate.
  • the circuit board 11 may be formed by selecting one or more of EMC (Epoxy Mold Compound), PI (polyimide), ceramic, graphene, glass synthetic fiber and combinations thereof.
  • the circuit board 11 is divided into a first region 12 and a second region 13.
  • the light emitting diode package 300 is mounted.
  • the light emitting diode package 300 is electrically connected to the wiring of the circuit board 11 by being mounted on the first region 12.
  • the first region 12 is disposed to face a side surface of the light guide plate 20 through which light emitted from the light emitting diode package 300 is incident.
  • the second region 13 is folded perpendicularly to the first region 12. That is, the second region 13 is formed to protrude from the first region 12 toward the light guide plate 20.
  • a plurality of light emitting diode packages (300) are disposed in the first region (12) of the circuit board (11).
  • the plurality of light emitting diode packages 300 are arranged side by side in the longitudinal direction of the first region 12.
  • the light emitting diode package 300 includes a package substrate (not shown) and a light emitting diode chip (not shown) mounted on the package substrate.
  • the light emitting diode package 300 according to the embodiment of the present invention has a long structure in one direction. Terminal portions are disposed on both sides of the light emitting diode package 300, and only one polarity terminal portion is located on one side.
  • a light emitting diode package 300 is connected to a terminal portion on a lower surface thereof, and a connection portion having a long portion is disposed. That is, the connection portion of the light emitting diode package 300 has a large area including a portion connected to the terminal portion and a long portion formed at the portion. Therefore, since the light emitting diode package 300 is connected to the circuit board 11 through a large area, reliable electrical connection with the circuit board 11 is possible.
  • connection portion is exposed on the lower surface, and light is emitted through the upper surface. That is, the lower surface of the light emitting diode package 300 is an adhesive surface, and the upper surface is a light emitting surface.
  • the circuit board 11 has a structure in which the first region 12 and the second region 13 are perpendicular to each other. When the light emitting diode package 300 of this embodiment is adhered to the first region 12 of the circuit board 11 by such a structure of the circuit board 11, 20 facing each other. Therefore, the light emitted from the light emitting surface of the light emitting diode package 300 is incident into the light pipe 20 through the incident surface of the light pipe 20.
  • the light emitting module 10 of the present invention is formed by bending the lead frame so as to be positioned on the side of the light emitting diode package for the sake of side view by the light emitting diode package 300 and the circuit board 11 no need.
  • the first terminal portion 113 and the second terminal portion 123 are formed to protrude from both sides of the LED package 300.
  • the first terminal portion 113 is formed to protrude along one side of the LED package 300.
  • the second terminal portion 123 is formed to protrude along the other side of the LED package 300.
  • a part of the light emitted from the plurality of light emitting diode packages 300 is reflected by the light guide plate 20 and directed to the circuit board 11. [ If the light reflected by the light guide plate 20 passes between the plurality of light emitting diode packages and is absorbed by the circuit board 11, a dark spot appears on the light emitting surface of the light guide plate. However, in the light emitting module 10 of the present embodiment, light directed toward the circuit board 11 is reflected by the first terminal portion 113 and the second terminal portion 123 protruding from both sides of the LED package 300, (20).
  • the light emitting module 10 reflects light directed between the plurality of light emitting diode packages 300 so as not to be absorbed by the circuit board 11, so that a dark spot is generated in the light pipe by the plurality of light emitting diode packages 300 Can be prevented.
  • FIGS. 22 to 24 are illustrations showing a package substrate according to a third embodiment of the present invention.
  • 22 to 24 are views illustrating an LED package according to another embodiment of the present invention.
  • the light emitting diode package of FIGS. 22 to 24 is a light emitting diode package to which the package substrate according to the third embodiment is applied.
  • 12 to 14 are illustrations of a lead frame of a package substrate according to the third embodiment.
  • 15 is a plan view of the package substrate according to the third embodiment.
  • 16 is a bottom view of the package substrate according to the third embodiment.
  • 17 is a side view of the package substrate according to the second embodiment.
  • 18 to 21 are sectional views of the package substrate according to the third embodiment.
  • the package substrate 600 includes a first lead frame 610, a second lead frame 620, and a body portion 630.
  • a lower portion of the body portion 630 surrounds the first lead frame 610 and the second lead frame 620 and a cavity 631 is formed on the upper portion of the body portion 630.
  • the first lead frame 610 and the second lead frame 620 are disposed to be laterally spaced from each other in the body portion 630 and are insulated from each other by the body portion 630.
  • the first lead frame 610 includes a first mounting portion 611, a first groove portion 612, a first zener connecting portion 661, a first terminal portion 613, 1 connection 614 and a first projection 619.
  • the second lead frame 620 includes a second mounting portion 621, a second groove portion 622, a second zener connecting portion 662, a second terminal portion 623, a second connecting portion 624, (629).
  • FIG. 12 shows the outer shapes of the upper and lower portions of the first lead frame 610 and the second lead frame 620. As shown in Fig.
  • solid lines indicate the outer shapes of the first lead frame 610 and the second lead frame 620 seen from above. That is, the solid line in FIG. 12 corresponds to the plan view of the first lead frame 610 and the second lead frame 620 shown in FIG. 12, the dotted lines indicate the outer shapes of the lower portions of the first lead frame 610 and the second lead frame 620 that are invisible at the upper portion. That is, the solid line connecting with the dotted line and the dotted line in FIG. 12 corresponds to the rear view of the first lead frame 610 and the second lead frame 620 shown in FIG.
  • the shadow patterned portions of the first lead frame 610 and the second lead frame 620 are half-etched on the upper surface.
  • the half-etched portion of the upper surface of the first lead frame 610 corresponds to the first trench 612. As shown in FIG. 13, the first trench 612 is formed around the first mounting portion 611.
  • the half-etched portion of the upper surface of the second lead frame 620 corresponds to the second trench 622.
  • the second trench 622 is formed around the second mounting portion 621.
  • the shadow patterned portions in the first lead frame 610 and the second lead frame 620 are half-etched portions at the bottom.
  • the lower portion of the first lead frame 610 is connected to the portion of the second lead frame 620 facing the second-second connecting portion 626 and the first connecting portion 615 excluding the first terminal portion 613, -2 connection portion 616 and the first-third connection portion 618 in the short axis direction. A part of the lower portion of the plurality of first protrusions 619 is exposed by this half-etching.
  • first lead frame 610 is partially half-etched between the first and second connection portions 616 and 618, which are separated from each other.
  • the half-etched portion at one side between the first-second connecting portion 616 and the first-third connecting portion 618 is a part of the lower portion of the first mounting portion 611.
  • the first lead frame 610 has a structure in which a portion of the lower portion of the first mounting portion 611 is half-etched to form the third groove portion 650.
  • the third trench 650 may be filled with the body portion 630 to improve the adhesion between the first lead frame 610 and the body portion 630.
  • the half-etched portion at the other side between the first-second connecting portion 616 and the first-third connecting portion 618 corresponds to a portion of the lower portion of one of the plurality of first protruding portions 619.
  • one side is the side facing the second lead frame 620, and the other side is the opposite side of the one side.
  • the first connecting portion 616 and the first connecting portion 618 are separated from each other but the upper portion is connected to the first mounting portion 611 and the first protruding portion 619 .
  • a spacing space 640 is formed between the first mounting portion 611 and the first protruding portion 619 so that the first-second connecting portion 616 and the first-third connecting portion 618 are spaced apart from each other .
  • the first lead frame 610 has a structure in which a through hole is formed between the first mounting portion 610 and the first projection 619. As shown in FIG. 20, in the spacing space 640, The adhesion between the first lead frame 610 and the second lead frame 620 and the body portion 630 can be improved.
  • the first through hole 641 is half-etched in the lower portion, and has a larger diameter than the upper portion.
  • the first burr prevention portion 645 is formed by half-etching the lower surface of the first lead frame 610 at the side edge of the first lead frame 610 located in the minor axis direction.
  • a first terminal portion 613 is positioned between the two first burr prevention portions 645.
  • the half-etched portions of the lower surface of the second lead frame 620 correspond to the second protrusion 629, the second through hole 642, and the second burr prevention portion 646.
  • the lower portion of the second lead frame 620 is connected to the portion facing the first lead frame 610 and the second-first connecting portion 625 and the second-second connecting portion 626 except for the second terminal portion 623 in the minor axis direction As shown in FIG. By this half-etching, a part of the lower portion of the plurality of second projecting portions 629 is exposed.
  • the second through hole 642 is half-etched in the lower portion thereof to have a larger diameter than the upper portion.
  • the second burr prevention portion 646 is formed by half-etching the lower surface of the second lead frame 620 at the side edge of the second lead frame 620 located in the minor axis direction.
  • a second terminal portion 623 is located between the two second burr prevention portions 646.
  • the first burr prevention portion 645 and the second burr prevention portion 646 are formed in a manner such that when dicing is performed to separate a plurality of package substrates or light emitting diode packages connected to each other, burr < / RTI > occurs.
  • the thickness of the first lead frame 610 and the second lead frame 620 may be the same as the width of the LED chip mounted on the package substrate 600.
  • the thicknesses of the first lead frame 610 and the second lead frame 620 are distances from the upper surface to the lower surface without the etched portions.
  • the width of the light emitting diode chip is a distance between both sides of the light emitting diode in the long axis direction.
  • the thickness d6 of the first lead frame 610 and the second lead frame 620 may be 250 ⁇ ⁇
  • the width of the light emitting diode chip mounted on the package substrate 600 may be 250 ⁇ ⁇ .
  • the total thickness of the package substrate 600 may be 700 ⁇ ⁇ , and the total width may be 7000 ⁇ ⁇ .
  • the total thickness of the package substrate 600 is set such that the first connection portion 614 of the first lead frame 610 and the second connection portion 624 of the second lead frame 620 are exposed on the lower surface of the body portion 630, To the upper surface of the body portion 630 where the cavity 631 is formed.
  • the overall width of the package substrate 600 is set such that the first terminal portion 613 of the first lead frame 610 is exposed to the second terminal portion 623 of the second lead frame 620 from a side of the exposed body portion 630, Is the distance to the other side of the exposed body portion 630.
  • the total thickness and overall width of the light emitting diode package (700 of FIGS. 22 to 24) in which the light emitting diode chip is mounted on the package substrate 600 and the sealing member is filled in the cavity 631 are also the same as those of the package substrate 600.
  • a first mounting portion 611, a first groove portion 612, and a first zener connecting portion 661 are formed on an upper surface of the first lead frame 610.
  • a second mounting portion 621, a second groove portion 622, and a second zener connecting portion 662 are formed on the upper surface of the second lead frame 620.
  • the first mounting portion 611, the second mounting portion 621, the first zener connecting portion 661 and the second zener connecting portion 662 are connected to each other through the cavity 631 of the package substrate 600 And is exposed to the outside.
  • the first groove portion 612 is formed along the rim of the first mounting portion 611 and the second groove portion 622 is formed along the rim of the second mounting portion 621. That is, the first groove portion 612 is formed so as to surround the first mounting portion 611, and the second groove portion 622 is formed so as to surround the second mounting portion 621. In other words, a first groove portion 612 or a second groove portion 612 is formed under the exposed portion of the body portion 630 around the first mounting portion 611 and the second mounting portion 621 at the bottom of the cavity 631, (Not shown).
  • the first groove portion 612 and the second groove portion 622 are formed so that the first mounting portion 611 and the first zener connecting portion 661 are separated from each other and the second groove portion 622 is formed between the second mounting portion 621 and the second zener connecting portion 662).
  • the light emitting diode chip 710 is mounted on the first mounting portion 611 and the second mounting portion 621, and the first mounting portion 611 and the second mounting portion 611 621 and the light emitting diode chip 710 are electrically connected to each other.
  • the first and second zener connecting portions 661 and 662 are electrically connected to the zener diode chip 720.
  • the bump pads 711 of the light emitting diode chip 710 are disposed on the first mounting portion 611 and the second mounting portion 621, respectively.
  • the size of the first mounting portion 611 and the second mounting portion 621 and the distance between the first mounting portion 611 and the second mounting portion 621 are different from each other with respect to the bump pads 711 of the light emitting diode chip 710 Size and the distance between the bump pads 711. That is, the distance d1 and the size between the first mounting portion 611 and the second mounting portion 621 may be substantially the same as the distance and the size between both the bump pads of the light emitting diode chip 710. 22, when the light emitting diode chip 710 is mounted on the package substrate 600, the first mounting portion 611 and the second mounting portion 621 are covered with the first mounting portion 611 and the second mounting portion 621.
  • the first mounting portion 611 and the second mounting portion 621 are not exposed to the outside but the first mounting portion 611 and the second mounting portion 621 are limited to the size of the bump pads of the light emitting diode chip 710 It is not.
  • the first mounting portion 611 and the second mounting portion 621 are formed on the light emitting diode chip 710 so as to apply a large amount of the conductive adhesive agent 730 to improve adhesion between the light emitting diode chip 710 and the package substrate 600.
  • the bump pads may be formed to have an area larger than that of the bump pads. In this case, even if the light emitting diode chip 710 is mounted on the package substrate 600, the first mounting portion 611 and the second mounting portion 621 can be exposed to the outside.
  • the distance d1 between the first mounting portion 611 and the second mounting portion 621 is 250 mu m.
  • the distance d2 between the first mounting portion 611 and one inner wall of the body portion 630 and the distance d3 between the second mounting portion 621 and the other inner wall of the body portion 630 are determined by the size of the light emitting diode package, Is determined in consideration of the luminous efficiency.
  • the inner wall of the body portion 630 is an inner wall forming the cavity 631, and the inner wall and the inner wall are inner walls facing each other located in the minor axis direction of the body portion 630.
  • the size of the light emitting diode package becomes large. Also, if d2 and d3 are too small, the distance between the light emitting diode chip 710 and the inner wall of the body portion 630 becomes too short. In this case, the light emitted from the side of the light emitting diode chip 710 may be reflected by the inner wall of the body portion 630 and re-incident on the light emitting diode chip 710. Accordingly, the light emitting efficiency of the light emitting diode package is reduced.
  • the light emitting diode chip 710 is mounted so that the bump pads 711 are offset in one direction.
  • the first mounting portion 611 and the second mounting portion 621 are also formed to be offset in one direction for the accurate connection between the LED chip 710 and the package substrate 600.
  • d2 is 130 ⁇ ⁇ and d3 is 120 ⁇ ⁇ .
  • d2 and d3 are not limited to have different values, and the values of d2 and d3 may be the same or different depending on the position of the bump pads 711. [ For example, d2 and d3 may all be 130 ⁇ ⁇ or 120 ⁇ ⁇ .
  • the first terminal portion 613 of the first lead frame 610 protrudes from one side located in the longitudinal direction of the body portion 630. That is, the first terminal portion 613 protrudes from one side of a short length of the body portion 630.
  • the second terminal portion 623 of the second lead frame 620 protrudes from the other short side of the body portion 630 located in the longitudinal direction of the body portion 630.
  • the protrusion distance d4 of each of the first lead frame 610 and the second lead frame 620 may be 200 mu m.
  • the upper width of the first terminal portion 613 and the upper width of the second terminal portion 623 are the same as the width of the other side of the body portion 630.
  • the width is the distance between both sides facing each other located in the minor axis direction of the package substrate 600.
  • the first lead frame 610 has a plurality of first protrusions 619 formed on one long side of the body portion 630 in the short axis direction.
  • One side of the first lead frame 610 on which the first protrusion 619 is formed is a side opposite to the other long side facing the second lead frame 620.
  • the plurality of first projections 619 are arranged side by side along one side of the first lead frame 610 and are spaced apart from each other.
  • Each of the first protrusions 619 is formed by half-etching a portion of the first lead frame 610 connected to one side of the long length of the first lead frame 610. Therefore, each of the first projections 619 protrudes in the lateral direction from the upper surface of the first lead frame 610 as shown in Figs. 20 and 21.
  • the lower portion of the first protrusion 619 of the concave structure half-etched in the first lead frame 610 is filled with the body portion 630.
  • the first protrusion 619 of the first lead frame 610 is exposed at one side of the long length of the body portion 630 as shown in Fig.
  • the second lead frame 620 has a plurality of second protrusions 629 formed on one long side of the body portion 630 in the short axis direction.
  • One side of the second lead frame 620 on which the second protrusion 629 is formed is a side opposite to the other long side facing the first lead frame 610.
  • the plurality of second projections 629 are arranged side by side along one side of the second lead frame 620 and are spaced apart from each other.
  • Each of the second projections 629 is formed by etching a lower portion of a portion of the second lead frame 620 that is connected to one side of the long length.
  • each second projection 629 protrudes laterally from the upper surface of the second lead frame 620 as shown in Figs. 20 and 21.
  • the lower portion of the second protrusion 629 of the concave structure half-etched in the second lead frame 620 is filled with the body portion 630.
  • the second projection 629 of the second lead frame 620 is exposed at the other long side of the body portion 630.
  • the first lead frame 610 and the second lead frame 620 of the present embodiment increase the bonding area of the first lead frame 610 and the second lead frame 620 to the body portion 630 by the first projections 619 and the second projections 629.
  • the body portion 630 has a structure in which the upper edge is half-etched on one side or the other side positioned in the major axis direction. This is an electrode mark 637 indicating the electrode direction of the package substrate 600.
  • the electrode mark 637 may be positioned above the lead frame connected to any one of the positive and negative electrodes of the external power source of the package substrate 600.
  • first connection portion 614 of the first lead frame 610 and the second connection portion 624 of the second lead frame 620 are exposed from the lower surface of the body portion 630.
  • the first connection portion 614 is divided into a 1-1 connection portion 615, a 1-2 connection portion 616 and a 1-3 connection portion 618.
  • the second connection portion 624 is divided into a 2-1 connection portion 625 and a second-second connection unit 626, respectively.
  • the 1-1 connection portion 615 extends from the first terminal portion 613 and is connected to the 1-2 connection portion 616. That is, the 1-1 connection portion 615 is not limited to the body portion 630 but has a large area extending to an outer region of the body portion 630.
  • the 1-2 connecting portion 616 extends from a portion of the 1-1 connecting portion 615 and has a smaller width than the 1-1 connecting portion 615.
  • the second connection portion 616 has a structure elongated in the other lateral direction of the body portion 630.
  • the 1-3 connection 618 is spaced apart from the 1-2 connection 616 and located between the 1-2 connection 616 and the 2-1 connection 625.
  • the first-third connecting portion 618 is spaced apart from the first-second connecting portion 616.
  • the upper portion of the 1-2 connecting portion 616 and the 1-3 connecting portion 618 are partially connected. That is, the lower portion corresponding to the first-second connecting portion 616 and the first-third connecting portion 618 in the first lead frame 610 and a part of the upper portion thereof are spaced apart from each other.
  • the first lead frame 610 a part of the upper portion of the first-second connecting portion 616 and the first-third connecting portion 618 is connected to each other by the first mounting portion 611 and the first protruding portion 619 have.
  • the spaced space between the first and second connection portions 616 and 618 is filled with the body portion 630.
  • the bonding area between the first lead frame 610 and the body portion 630 is increased, and the bonding force is improved.
  • the resin which is the material of the body portion 630, can flow well between the first lead frame 610 and the second lead frame 620. Accordingly, the airtightness between the body 630 and the first lead frame 610 and the second lead frame 620 can be improved.
  • air, gas, or the like generated in the packaging process or generated after packaging in the cavity 631 of the light emitting diode package (700 in FIGS. 22 to 24) through the portion having the spacing space at the upper portion of the first lead frame 610 May be discharged to the outside.
  • the second-second connecting portion 625 extends from the second terminal portion 623 and is connected to the second-second connecting portion 626. Further, the second-second connecting portion 626 extends from a portion of the second-one connecting portion 625, and has a width smaller than that of the second-one connecting portion 625.
  • the second-second connecting portion 626 has a structure elongated in the other lateral direction of the body portion 630.
  • all the corner portions of the first lead frame 610 and the second lead frame 620 are formed to have a curvature. Since the first lead frame 610 and the second lead frame 620 are formed so that the corner portions have a curvature, the adhesion area with the body portion 630 increases, and the adhesion can be improved.
  • the resin forming the body portion can not flow to the inside of the corner, and a space may be formed between the lead frame and the body portion 630.
  • the resin forming the body portion 630 flows to the inside of the corners and can be completely filled in this embodiment. Therefore, the airtightness between the first lead frame 610 and the second lead frame 620 and the body portion 630 can be improved in the package substrate 600 according to the present embodiment.
  • two first through holes 641 are formed in the first lead frame 610 and two second through holes 642 are formed in the second lead frame 620.
  • the first through hole 641 is located at the 1-1 connection portion 615 and is formed to penetrate from the upper surface to the lower surface of the first lead frame 610.
  • the second through hole 642 is formed to penetrate from the upper surface to the lower surface of the second lead frame 620 when the second through hole 642 is located at the second-first connecting portion 625.
  • the two first through holes 641 and the second through holes 642 are filled with the body portion 630 so that the adhesive force between the first lead frame 610 and the second lead frame 620 and the body portion 630 .
  • the first through hole 641 and the second through hole 642 may be formed to have a size that can be formed by at least the injection process of the first lead frame 610 and the second lead frame 620 .
  • the two first through holes 641 and the second through holes 642 may be formed as large as possible in the 1-1 connection portion 615 and the 2-1 connection portion 625.
  • the airtightness with the body portion 630 can be improved. That is, the first through hole 641 and the second through hole 642 are formed in a size that takes into account the injection process of the first lead frame 610 and the second lead frame 620, the adhesive force with the body portion 630, As shown in FIG.
  • the first through-hole 641 and the second through-hole 642 may have a diameter d5 of 300 mu m.
  • the first curved surface A and the second curved surface B of the first lead frame 610 and the second lead frame 620 have different curvatures.
  • the first curved surface A of the first lead frame 610 is a portion to which the 1-1 connection portion 615 and the 1-2 connection portion 616 are connected and the second curved surface A of the second lead frame 620, And faces the edge of the connection portion 626.
  • the first curved surface A of the second lead frame 620 is a curved surface portion to which the second-second connecting portion 625 and the second-second connecting portion 626 are connected, 1-3 connection portion 618 of FIG.
  • the first connecting portion 614 of the first lead frame 610 and the second connecting portion 624 of the second lead frame 620 are portions in contact with the conductive adhesive.
  • the conductive adhesive is applied to the first connecting portion 614 and the second connecting portion 624
  • the body portion 630 may be formed of a metal.
  • the first curved surface A of the first lead frame 610 should be spaced as far as possible from the edge of the second-second connecting portion 626 of the facing second lead frame 620.
  • the first curved surface A of the second lead frame 620 should be as far as possible from the edge of the first-third connecting portion 618 of the first lead frame 610 facing each other. Therefore, the first curved surface A of the first lead frame 610 and the second lead frame 620 has a small curvature so as to be spaced as far as possible from the edges of the other lead frames facing each other.
  • the second curved surface B of the first lead frame 610 is a curved surface portion that is the same as the first terminal portion 613 in the 1-1 connection portion 615 and becomes smaller.
  • the second curved surface B of the second lead frame 620 is a curved surface portion having the same width as the second terminal portion 623 in the second-first connecting portion 625 and becoming smaller.
  • the first curved surface B of the first lead frame 610 and the second curved surface B of the second lead frame 620 are all adjacent to the side surface of the body portion 630 located in the minor axis direction.
  • Both side surfaces of the body portion 630 located in the minor axis direction have a smaller junction area with the first lead frame 610 and the second lead frame 620 than the center portion of the body portion 630.
  • the first curved surface B of the first lead frame 610 and the second curved surface B of the second lead frame 620 adjacent to both sides of the body portion 630 is larger than the curved surface B of the body portion 630 in order to increase the area of contact with the body portion 630 And is formed to have a curvature. Since the first curved surface B of the first lead frame 610 and the second curved surface B of the second lead frame 620 have a large curvature, the body portion 630 can be brought into close contact with the entire second curved surface B.
  • the first lead frame 610 and the second lead frame 620 and the body portion 630 are formed by the second curved surface B having a large curvature of the first lead frame 610 and the second lead frame 620. [ ) Is improved.
  • the light emitting diode package to which the package substrate 600 is applied is excellent in hermeticity and can prevent gas, moisture, dust, etc. from penetrating from the outside to the inside.
  • the first lead frame 610 and the second lead frame 620 can be prevented from being short-circuited by the conductive adhesive agent and improving the adhesive force and adhesion between the first lead frame 610 and the body portion 630, B are formed to have a larger curvature than the first curved surface A relatively.
  • FIG. 18 is a cross-sectional view (E1-E2) of the package substrate 600 according to the third embodiment of the present invention taken along the major axis.
  • Fig. 19 is another sectional view (E3-E4) of the package substrate 600 according to the third embodiment of the present invention, taken along the major axis.
  • 20 is a cross-sectional view (E5-E6) of the package substrate 600 according to the third embodiment of the present invention cut in the minor axis direction.
  • a groove 635 is formed on the upper portion of the inner wall of the body portion 630.
  • the groove 635 is formed in the direction of the outer wall of the body portion 630 from the inner wall of the body portion 630.
  • the groove 635 thus formed is formed between the upper surface of the body portion 630 and the inner wall forming the cavity 631. That is, the upper part of the package substrate 600 is a multi-stepped structure having a recessed corner connecting the upper surface and the inner wall of the body part 630 by the grooves 635.
  • the groove 635 is formed on the inner wall positioned in the longitudinal direction of the body portion 630, but the position where the groove 635 is formed is not limited thereto.
  • the groove 635 may be formed on the entire inner wall of the body portion 630.
  • the sealing member When the sealing member (not shown) is filled in the cavity 631 or when the decay of the sealing member is expanded due to a change in temperature or the like, the sealing member may overflow in the cavity 631 of the body portion 630 . At this time, the sealing member that fills and overflows the cavity 631 is located in the groove 635. Therefore, it is possible to prevent the sealing member from covering the upper surface of the body portion 630 by the groove 635.
  • the inclination? 2 of the inner wall positioned in the minor axis direction is smaller than the slope? 1 of the inner wall positioned in the major axis direction in the body portion 630.
  • the slope is the angle between the bottom of the cavity 631 and the inner wall This is the slope. That is, the inner wall positioned in the short axis direction of the body portion 630 is formed so as to be steeper than the inner wall positioned in the longitudinal direction.
  • the distance between the light emitting diode chip 710 and the inner wall is shorter in the shorter axis direction than in the longer axis direction. That is, the distance between the inner wall of the body portion 630 located in the minor axis direction and the side surface of the light emitting diode chip 710 is short. Therefore, the inclination of the inner wall of the body portion 630 located in the minor axis direction should be considered in the limited short axis direction of the body portion 630 and that the body portion 630 is formed by an injection process. Further, the light emitted from the side of the light emitting diode chip 710 must be reflected upward of the package substrate 600.
  • the inner wall of the body portion 630 located in the minor axis direction prevents the light emitted from the side of the light emitting diode chip 710 from being reflected by the inner wall of the body portion 630 and re-entering the light emitting diode chip 710 Should be able to.
  • the inclination [alpha] 2 of the inner wall of the body portion 630 located in the minor axis direction needs to be taken into consideration, such as the distance from the light emitting diode chip 710, the injection process,
  • the inner wall of the body portion 630 located in the major axis direction is larger in distance from the light emitting diode chip 710 than in the minor axis direction. That is, a sufficient space is formed between the inner wall of the body portion 630 located in the major axis direction and the light emitting diode chip 710. Therefore, the inclination? 1 of the inner wall of the body portion 630 located in the major axis direction is set such that the light from the LED chip 710 does not enter the light emitting diode chip 710 again but toward the upper direction of the package substrate 600 Should be considered.
  • the inclination? 1 of the inner wall positioned in the major axis direction in the body portion 630 is 147 ⁇ and the inclination? 2 of the inner wall located in the minor axis direction is 122 ⁇ .
  • the thus formed light emitting diode package 700 can prevent light from the light emitting diode chip 710 from being reflected on the inner wall and re-entering into the light emitting diode chip 710, thereby minimizing optical loss of the light emitting diode package .
  • 22 to 24 illustrate an LED package according to another embodiment of the present invention.
  • 22 is a top plan view of a light emitting diode package according to another embodiment.
  • 23 is a sectional view (F1-F2) of the light emitting diode package of Fig.
  • 24 is another sectional view (F3-F4) of the light emitting diode package of Fig.
  • the light emitting diode package 700 includes a package substrate 600, a light emitting diode chip 710, a zener diode chip 720 and a sealing member 750.
  • the package substrate 600 is a package substrate according to the third embodiment described with reference to FIGS. 12 to 21.
  • FIG. 12 to 21 is a package substrate according to the third embodiment described with reference to FIGS. 12 to 21.
  • Bump pads 711 are located below the light emitting diode chip 710.
  • the bump pads 711 of the light emitting diode chip 710 include a bump pad electrically connected to the n-type semiconductor layer in the light emitting diode chip 710 and a bump pad electrically connected to the p-type semiconductor layer.
  • the light emitting diode chip 710 is disposed on the first mounting portion 611 and the second mounting portion 621.
  • a conductive adhesive agent 730 is positioned between the first mounting portion 611 and the second mounting portion 621 and the bump pads 711.
  • the light emitting diode chip 710 is fixed on the first mounting portion 611 and the second mounting portion 621 by the conductive adhesive 730 and the first mounting portion 611 and the second mounting portion 621 And is electrically connected.
  • the conductive adhesive 730 is a solder.
  • the zener diode chip 720 is disposed on the second zener connecting portion 662 and connected to the second zener connecting portion 662 by a wire. At this time, the bump pads 721 electrically connected to the inside of the zener diode chip 720 may be located on the upper and lower portions of the zener diode chip 720, respectively.
  • a conductive adhesive 730 may be placed between the bumper pad 721 of the zener diode chip 720 and the second zener connecting portion 662.
  • the zener diode chip 720 is fixed to the upper portion of the second zener connecting portion 662 by the conductive adhesive 730 and is electrically connected to the second zener connecting portion 662.
  • the first mounting portion 611 and the first zener connecting portion 661 are formed on the first lead frame 610 and are electrically connected to each other.
  • the second mounting portion 621 and the second zener connecting portion 662 are formed on the second lead frame 620 and are electrically connected to each other.
  • the light emitting diode chip 710 and the zener diode chip 720 are electrically connected in parallel.
  • the cavity 631 of the package substrate 600 on which the light emitting diode chip 710 and the zener diode chip 720 are disposed is filled with the sealing member 750.

Abstract

The present invention relates to a light-emitting diode package and a light-emitting module comprising the same. According to one embodiment of the present invention, the light-emitting diode package comprises: a body part having a cavity at the upper part thereof and having a long shape in one direction; and a first lead frame and a second lead frame which are coupled to the bottom of the body part and spaced apart from each other in a transverse direction. The first lead frame comprises: a first mounting part exposed in the cavity; a first terminal part exposed on one side surface of the body part; and a first connection part exposed on the lower surface of the body part. The second lead frame comprises: a second mounting part exposed in the cavity; a second terminal part exposed on the other side surface of the body part along a one-side direction; and a second connection part exposed on the lower surface of the body part.

Description

발광 다이오드 패키지 및 이를 포함하는 발광 모듈Light emitting diode package and light emitting module including the same
본 발명은 발광 다이오드 패키지 및 이를 포함하는 발광 모듈에 관한 것이다.The present invention relates to a light emitting diode package and a light emitting module including the same.
일반적으로 발광 다이오드 패키지는 디스플레이 장치의 백라이트 광원 등 다양한 분야에서 광원으로 사용되고 있다. 특히, 백라이트 광원으로 사용되는 발광 다이오드 패키지는 크게 탑형 발광 다이오드 패키지와 사이드뷰 발광 다이오드 패키지로 분류할 수 있다. 사이드뷰 발광 다이오드 패키지는 에지(Edge) 타입의 백라이트 모듈에 사용되어 도광판의 측면으로 광을 입사한다.In general, a light emitting diode package is used as a light source in various fields such as a backlight light source of a display device. Particularly, a light emitting diode package used as a backlight light source can be roughly divided into a top light emitting diode package and a side view light emitting diode package. The side view light emitting diode package is used in an edge type backlight module, and light is incident on the side of the light guide plate.
에지(Edge) 타입의 백라이트 모듈에 사용되는 발광 다이오드 패키지는 일반적으로, 도광판의 두께 방향, 즉 상하 방향으로는 좁게 광을 방출할 필요가 있으며, 도광편의 가장자리를 따라 측면 방향으로는 넓게 광을 방출한다. 이를 위해, 이 백라이트 모듈에 사용되는 사이드뷰 발광 다이오드 패키지는 대체로 일측 방향으로 기다란 형상을 갖는다.Generally, a light emitting diode package used in an edge type backlight module needs to narrowly emit light in the thickness direction of the light guide plate, that is, in the up and down direction, and to emit light widely in the lateral direction along the edge of the light guide member do. To this end, the side view light emitting diode package used in the backlight module has a generally long shape in one direction.
한편, 종래의 사이드뷰 발광 다이오드 패키지의 경우, 한 측면에 양 극성의 단자부가 모두 형성된다. 따라서, 양 극성의 단자는 좁은 면적을 가지며, 서로 근접하게 위치하게 되어, 테스트 시 프로브와 단자 간의 접촉 불량이 발생하는 문제가 발생한다.On the other hand, in the conventional side view light emitting diode package, both polarity terminal portions are formed on one side. Therefore, the terminals of both polarities have a narrow area and are located close to each other, thereby causing a problem that contact failure occurs between the probe and the terminal during the test.
또한, 종래의 사이드뷰 발광 다이오드 패키지는 하면에 위치하는 양 극성의 접속부가 얇고 기다란 형상을 갖는다. 따라서, 발광 다이오드 패키지는 백라이트의 회로 기판 등과 같은 외부 구성과의 전기적 연결을 위한 충분한 면적을 확보하기 어렵다.In addition, the conventional side view light emitting diode package has a thin and long shape with a bipolar connection portion located on the lower surface. Therefore, it is difficult to secure a sufficient area for electrical connection with an external configuration such as a backlight circuit board or the like.
본 발명이 해결하고자 하는 과제는 패키지 기판의 양 측면에 각각 한 극성의 단자부만을 형성하여 단자부가 넓은 면적을 갖도록 하여 프로브와 단자부 간의 접촉 불량을 방지할 수 있는 발광 다이오드 패키지를 제공하는데 있다.SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting diode package capable of preventing a contact failure between a probe and a terminal portion by forming only terminal portions of one polarity on both sides of a package substrate to have a wide area.
본 발명이 해결하고자 하는 다른 과제는 패키지 기판의 양 측면에 각각 한 극성의 단자부만을 형성하여 양 극성의 단자부에 접촉되는 프로브들이 서로 합선되는 것을 방지할 수 있는 발광 다이오드 패키지를 제공하는데 있다.Another object of the present invention is to provide a light emitting diode package in which only one polarity terminal portion is formed on both sides of a package substrate so that probes contacting the polarity terminal portions can be prevented from being shorted together.
본 발명의 해결하고자 하는 또 다른 과제는 단자부와 프로브 간의 접촉 불량 및 프로브들 간의 합선을 방지하여 정확한 분류 공정을 수행할 수 있는 발광 다이오드 패키지를 제공하는데 있다.It is another object of the present invention to provide a light emitting diode package which can prevent a faulty contact between a terminal portion and a probe and a short circuit between probes to perform an accurate classification process.
본 발명이 해결하고자 하는 또 다른 과제는 발광 다이오드 패키지의 정확한 분류 공정으로, 신뢰성 있는 발광 모듈을 제공하는 데 있다.Another problem to be solved by the present invention is to provide a reliable light emitting module, which is an accurate classification process of a light emitting diode package.
본 발명의 일 실시 예에 따르면, 몸체부, 제1 리드 프레임 및 제2 리드 프레임을 포함하는 발광 다이오드 패키지가 제공된다. 몸체부는 상부에 캐비티를 가지며 일 방향으로 기다란 형상을 가진다. 제1 리드 프레임은 몸체부의 바닥에 결합되고, 캐비티에서 노출된 제1 실장부, 몸체부의 일 측면에서 노출된 제1 단자부 및 몸체부의 하면에 노출된 제1 접속부를 포함한다. 제2 리드 프레임은 제1 리드 프레임으로부터 횡 방향으로 이격되어 몸체부의 바닥에 결합된다. 또한, 제2 리드 프레임은 캐비티에 노출된 제2 실장부, 일측 방향을 따라 몸체부의 타 측면에서 노출된 제2 단자부 및 몸체부의 하면에 노출된 제2 접속부를 포함한다. 여기서, 제1 접속부는 제1 단자부에서 연장된 제1-1 접속부 및 제1-1 접속부의 일부에서 일 방향을 따라 제2 단자부측으로 연장된 제1-2 접속부를 포함한다. 또한, 제2 접속부는 제2 단자부에서 연장된 제2-1 접속부 및 제2-1 접속부의 일부에서 일 방향을 따라 제1 단자부측으로 연장된 제2-2 접속부를 포함한다.According to an embodiment of the present invention, there is provided a light emitting diode package including a body portion, a first lead frame, and a second lead frame. The body portion has a cavity in its upper portion and has an elongated shape in one direction. The first lead frame is coupled to the bottom of the body portion, and includes a first mounting portion exposed at the cavity, a first terminal portion exposed at one side of the body portion, and a first connection portion exposed at a lower surface of the body portion. The second leadframe is laterally spaced from the first leadframe and joined to the bottom of the body. The second lead frame includes a second mounting portion exposed to the cavity, a second terminal portion exposed at the other side of the body portion along one direction, and a second connection portion exposed at a lower surface of the body portion. Here, the first connecting portion includes a 1-1 connecting portion extending from the first terminal portion and a 1-2 connecting portion extending from the part of the 1-1 connecting portion along the one direction toward the second terminal portion. The second connection portion includes a second-second connection portion extending from the second terminal portion and a second-second connection portion extending from the portion of the second-first connection portion toward the first terminal portion along one direction.
본 발명의 다른 실시 예에 따르면, 회로 기판 및 회로 기판 상에 실장된 상기 발광 다이오드 패키지를 포함하는 발광 모듈이 제공된다. 여기서, 발광 다이오드 패키지는 도광판의 일 측면을 광을 방출한다.According to another embodiment of the present invention, there is provided a light emitting module including the circuit board and the light emitting diode package mounted on the circuit board. Here, the light emitting diode package emits light on one side of the light guide plate.
본 발명의 실시 예에 따르면, 발광 다이오드 패키지 및 이를 포함하는 발광 모듈은 패키지 기판의 양 측면에 각각 한 극성의 단자부만을 형성하여 단자부가 넓은 면적을 갖도록 하여 프로브와 단자부 간의 접촉 불량을 방지할 수 있다. 이에 따라, 발광 다이오드 패키지는 양 극성의 단자부에 접촉되는 프로브들이 서로 합선되는 것을 방지할 수 있다. 또한, 패키지 기판은 단자부와 프로브 간의 접촉 불량 및 프로브들 간의 합선을 방지하여 신뢰성 있는 발광 다이오드 패키지의 분류 공정의 신뢰성이 향상될 수 있다.According to the embodiment of the present invention, the light emitting diode package and the light emitting module including the light emitting diode package have only one polarity terminal portion on both sides of the package substrate, so that the terminal portion has a large area to prevent the contact failure between the probe and the terminal portion . Thus, the light emitting diode package can prevent the probes contacting the terminal portions of both polarities from being shorted together. In addition, the package substrate can prevent the contact failure between the terminal portion and the probe and the short-circuit between the probes, so that the reliability of the reliable light emitting diode package sorting process can be improved.
도 1 내지 도 3은 본 발명의 제1 실시 예에 따른 패키지 기판을 나타낸 예시도이다.1 to 3 are views showing an example of a package substrate according to a first embodiment of the present invention.
도 4 및 도 5는 본 발명의 제2 실시 예에 따른 패키지 기판을 나타낸 예시도이다.4 and 5 are views showing an example of a package substrate according to a second embodiment of the present invention.
도 6 내지 도 8은 본 발명의 일 실시 예에 따른 발광 다이오드 패키지를 설명하기 위한 예시도이다.6 to 8 are diagrams for explaining a light emitting diode package according to an embodiment of the present invention.
도 9 및 도 10은 본 발명의 다른 실시 예에 따른 발광 다이오드 패키지를 나타낸 예시도이다.9 and 10 are views showing an LED package according to another embodiment of the present invention.
도 11은 본 발명의 실시 예에 따른 발광 모듈을 나타낸 예시도이다.11 is an exemplary view illustrating a light emitting module according to an embodiment of the present invention.
도 12 내지 도 21은 본 발명의 제3 실시 예에 따른 패키지 기판을 나타낸 예시도이다.12 to 21 are illustrations showing a package substrate according to a third embodiment of the present invention.
도 22 내지 도 24는 본 발명의 또 다른 실시 예에 따른 발광 다이오드 패키지를 나타낸 예시도이다.22 to 24 illustrate an LED package according to another embodiment of the present invention.
이하, 첨부한 도면들을 참고하여 본 발명의 실시 예들을 상세히 설명하기로 한다. 다음에 소개되는 실시 예들은 당업자에게 본 발명의 사상이 충분히 전달될 수 있도록 하기 위한 예시로서 제공되는 것이다. 따라서, 본 발명은 이하 설명되는 실시 예들에 한정되지 않고 다른 형태로 구체화될 수도 있다. 그리고, 도면들에 있어서, 구성요소의 폭, 길이, 두께 등은 편의를 위하여 과장되어 표현될 수 있다. 명세서 전체에 걸쳐서 동일한 참고번호들은 동일한 구성요소들을 나타내고 유사한 참고번호는 대응하는 유사한 구성요소를 나타낸다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, and the like of the components may be exaggerated for convenience. Like numbers refer to like elements throughout the specification and like reference numerals represent corresponding like elements.
본 발명의 일 실시 예에 따르면, 발광 다이오드 패키지는 몸체부, 제1 리드 프레임 및 제2 리드 프레임을 포함한다. 상기 몸체부는 상부에 캐비티를 가지며 일 방향으로 기다란 형상을 가진다. 제1 리드 프레임은 몸체부의 바닥에 결합되고, 캐비티에서 노출된 제1 실장부, 몸체부의 일 측면에서 노출된 제1 단자부 및 몸체부의 하면에 노출된 제1 접속부를 포함한다. 제2 리드 프레임은 제1 리드 프레임으로부터 횡 방향으로 이격되어 몸체부의 바닥에 결합된다. 또한, 제2 리드 프레임은 캐비티에 노출된 제2 실장부, 일측 방향을 따라 몸체부의 타 측면에서 노출된 제2 단자부 및 몸체부의 하면에 노출된 제2 접속부를 포함한다. 여기서, 제1 접속부는 제1 단자부에서 연장된 제1-1 접속부 및 제1-1 접속부의 일부에서 일 방향을 따라 제2 단자부측으로 연장된 제1-2 접속부를 포함한다. 또한, 제2 접속부는 제2 단자부에서 연장된 제2-1 접속부 및 제2-1 접속부의 일부에서 일 방향을 따라 제1 단자부측으로 연장된 제2-2 접속부를 포함한다.According to an embodiment of the present invention, the light emitting diode package includes a body portion, a first lead frame, and a second lead frame. The body portion has a cavity in its upper portion and has an elongated shape in one direction. The first lead frame is coupled to the bottom of the body portion, and includes a first mounting portion exposed at the cavity, a first terminal portion exposed at one side of the body portion, and a first connection portion exposed at a lower surface of the body portion. The second leadframe is laterally spaced from the first leadframe and joined to the bottom of the body. The second lead frame includes a second mounting portion exposed to the cavity, a second terminal portion exposed at the other side of the body portion along one direction, and a second connection portion exposed at a lower surface of the body portion. Here, the first connecting portion includes a 1-1 connecting portion extending from the first terminal portion and a 1-2 connecting portion extending from the part of the 1-1 connecting portion along the one direction toward the second terminal portion. The second connection portion includes a second-second connection portion extending from the second terminal portion and a second-second connection portion extending from the portion of the second-first connection portion toward the first terminal portion along one direction.
제1-2 접속부와 제2-2 접속부는 서로 평행하게 배치된다.The 1-2 connecting portion and the 2-2 connecting portion are arranged parallel to each other.
또한, 제1 접속부 및 제2 접속부 중 적어도 하나는 일 방향에 수직한 중심선을 가로지른다.Further, at least one of the first connecting portion and the second connecting portion crosses a center line perpendicular to one direction.
발광 다이오드 패키지에서 제1-1 접속부의 일부는 다른 일부보다 큰 폭을 가지되, 제1-1 접속부의 일부는 제1 단자부로부터 연장되는 부분을 포함한다. 또한, 제1-1 접속부의 다른 일부는 제1-2 접속부가 연장되는 부분을 포함한다.In the light emitting diode package, a part of the 1-1 connection part has a larger width than the other part, and a part of the 1-1 connection part includes a part extending from the first terminal part. Further, another part of the 1-1 connecting portion includes a portion where the 1-2 connecting portion extends.
발광 다이오드 패키지에서 제2-1 접속부의 일부는 다른 일부보다 큰 폭을 가지되, 제2-1 접속부의 일부는 제2 단자부로부터 연장되는 부분을 포함한다. 또한, 제2-1 접속부의 다른 일부는 제2-2 접속부가 연장되는 부분을 포함한다.In the light emitting diode package, a part of the second-1 connection part has a larger width than the other part, and a part of the second-1 connection part includes a part extending from the second terminal part. Further, another portion of the second-second connecting portion includes a portion where the second-second connecting portion extends.
몸체부의 캐비티는 하부에서 상부로 갈수록 폭이 커진다.The cavity of the body increases in width from the lower part to the upper part.
제1 리드 프레임은 제1 리드 프레임을 관통하는 제1 관통홀을 더 포함할 수 있다. 또한, 몸체부의 일부는 제1 관통홀 내에 위치한다.The first lead frame may further include a first through hole passing through the first lead frame. Further, a part of the body portion is located in the first through hole.
제1 관통홀은 상부의 폭이 하부의 폭보다 작다.The width of the upper portion of the first through hole is smaller than the width of the lower portion.
제2 리드 프레임은 제2 리드 프레임을 관통하는 제2 관통홀을 더 포함할 수 있다. 또한, 몸체부의 일부는 제2 관통홀 내에 위치한다.The second lead frame may further include a second through hole passing through the second lead frame. Further, a part of the body portion is located in the second through hole.
제2 관통홀은 상부의 폭이 하부의 폭보다 작다.The width of the upper portion of the second through hole is smaller than the width of the lower portion.
제1 리드 프레임은 상면에서 오목하게 형성된 홈인 제1 홈부를 더 포함할 수 있다.The first lead frame may further include a first groove portion which is a groove formed concavely on the upper surface.
제1 홈부는 몸체부로 채워질 수 있다.The first groove portion may be filled with the body portion.
제2 리드 프레임은 상면에서 오목하게 형성된 홈인 제2 홈부를 더 포함할 수 있다.The second lead frame may further include a second groove portion which is a groove formed concavely on the upper surface.
제2 홈부는 몸체부로 채워진다.The second groove portion is filled with the body portion.
제1-2 접속부와 제2-1 접속부 간의 이격 거리 및 2-2 접속부와 제1-1 접속부 간의 이격 거리 거리는 제1-2 접속부와 제2-2 접속부 간의 이격 거리보다 클 수 있다. 또한, 제1-2 접속부와 제2-1 접속부 간의 이격 거리 및 2-2 접속부와 제1-1 접속부 간의 이격 거리 거리는 제1-2 접속부와 몸체부의 측면 간의 이격 거리 및 제2-2 접속부와 몸체부의 측면 간의 이격 거리보다 작을 수 있다.The separation distance between the 1-2 connection portion and the 2-1 connection portion and the separation distance between the 2-2 connection portion and the 1-1 connection portion may be larger than the separation distance between the 1-2 connection portion and the 2-2 connection portion. The distance between the 1-2 connecting portion and the 2-1 connecting portion and the distance between the 2-2 connecting portion and the 1-1 connecting portion are set to be the distance between the 1-2 connecting portion and the side surface of the body portion, May be smaller than the separation distance between the side surfaces of the body portion.
제1 실장부 및 제2 실장부는 일 방향을 따라 길게 형성된 구조일 수 있다.The first mounting portion and the second mounting portion may have a long structure along one direction.
발광 다이오드 패키지는 몸체부의 캐비티에 배치되어 제1 실장부 및 제2 실장부와 전기적으로 연결되는 발광 다이오드 칩, 및 발광 다이오드 칩을 둘러싸도록 캐비티에 충전된 밀봉 부재를 더 포함할 수 있다.The light emitting diode package may further include a light emitting diode chip disposed in the cavity of the body portion and electrically connected to the first mounting portion and the second mounting portion, and a sealing member filled in the cavity to surround the light emitting diode chip.
발광 다이오드 칩은 일 방향으로 기다란 형상의 기판, 발광 구조체, 제1 범프 패드 및 제2 범프 패드를 포함한다. 발광 구조체는 기판 하면에서부터 제1 도전성 반도체층, 활성층 및 제2 도전성 반도체층이 차례대로 적층되어 있다. 또한, 제1 범프 패드는 제1 도전성 반도체층와 전기적으로 연결된다. 또한, 제2 범프 패드는 제1 범프 패드와 횡방향으로 이격되되며, 제2 도전성 반도체층과 전기적으로 연결된다. 또한, 제1 범프 패드 및 제2 범프 패드는 기판의 일 방향을 따라 길게 형성되다. 또한, 제1 범프 패드는 제1 실장부 상부에 위치하고, 제2 범프 패드는 제2 실장부 상부에 위치한다.The light emitting diode chip includes an elongated substrate in one direction, a light emitting structure, a first bump pad, and a second bump pad. The light emitting structure includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially stacked from the bottom surface of the substrate. Also, the first bump pad is electrically connected to the first conductive semiconductor layer. Also, the second bump pad is laterally spaced apart from the first bump pad and is electrically connected to the second conductive semiconductor layer. In addition, the first bump pad and the second bump pad are elongated along one direction of the substrate. Further, the first bump pad is located above the first mounting portion, and the second bump pad is located above the second mounting portion.
본 발명의 다른 실시 예에 따르면, 회로 기판 및 회로 기판 상에 실장된 발광 다이오드 패키지를 포함하는 발광 모듈이 제공된다. 여기서, 발광 다이오드 패키지는 도광판의 일 측면을 광을 방출한다.According to another embodiment of the present invention, there is provided a light emitting module comprising a circuit board and a light emitting diode package mounted on the circuit board. Here, the light emitting diode package emits light on one side of the light guide plate.
회로 기판은 발광 다이오드 패키지가 배치되며 상면에 회로 패턴이 형성된 제1 영역 및 제1 영역에 수직한 제2 영역을 포함한다.The circuit board includes a first region in which a light emitting diode package is disposed and a circuit pattern is formed on an upper surface thereof, and a second region perpendicular to the first region.
발광 모듈은 발광 다이오드 패키지의 하면에 위치하는 제1 접속부 및 제2 접속부는 회로 기판의 제1 영역의 회로 기판과 접속된다. 또한, 발광 모듈은 발광 다이오드 패키지에서 광이 방출되는 상면이 도광판의 일 측면을 마주한다.The light emitting module is connected to the circuit board of the first area of the circuit board by the first connecting part and the second connecting part located on the lower surface of the light emitting diode package. Further, the light emitting module faces one side of the light guide plate with the upper surface on which light is emitted from the light emitting diode package.
발광 다이오드 패키지는 복수개 일 수 있다.The light emitting diode package may be plural.
이하 도면을 참고하여 구체적으로 설명한다.Hereinafter, the present invention will be described in detail with reference to the drawings.
도 1 내지 도 3은 본 발명의 제1 실시 예에 따른 패키지 기판을 나타낸 예시도이다.1 to 3 are views showing an example of a package substrate according to a first embodiment of the present invention.
도 1은 제1 실시 예에 따른 패키지 기판의 단면도이며, 도 2는 제1 실시 예에 따른 패키지 기판의 하부 평면도이며, 도 3은 제1 실시 예에 따른 패키지 기판의 상부 평면도를 나타낸다.FIG. 1 is a cross-sectional view of a package substrate according to a first embodiment, FIG. 2 is a bottom plan view of a package substrate according to the first embodiment, and FIG. 3 is a top plan view of the package substrate according to the first embodiment.
도 1 내지 도 3을 참고하면, 제1 실시 예에 따른 패키지 기판(100)은 제1 리드 프레임(110), 제2 리드 프레임(120) 및 몸체부(130)를 포함한다.1 to 3, the package substrate 100 according to the first embodiment includes a first lead frame 110, a second lead frame 120, and a body portion 130.
몸체부(130)는 제1 리드 프레임(110) 및 제2 리드 프레임(120)을 둘러싸면서 제1 리드 프레임(110) 및 제2 리드 프레임(120)이 서로 이격되어 배치되도록 이들을 지지한다. 예를 들어, 몸체부(130)는 열경화성 수지로 형성된다. The body 130 surrounds the first lead frame 110 and the second lead frame 120 and supports the first lead frame 110 and the second lead frame 120 so as to be spaced apart from each other. For example, the body portion 130 is formed of a thermosetting resin.
몸체부(130)는 일 방향을 따라 기다란 형상을 갖는다. 따라서, 몸체부(130)는 일 방향으로 긴 변을 포함하는 측면과 타 방향으로 짧은 변을 포함하는 측면을 포함한다. 예를 들면, 몸체부(130)는 하면이 서로 마주보는 두개의 긴 변과 서로 마주보는 두 개의 짧은 변을 포함하는 직사각형 형태일 수 있다. 몸체부(130)의 상부에는 발광 다이오드 칩(미도시)이 수용되는 캐비티(131)가 형성되어 있다. 도 1을 참고하면, 캐비티(131)는 하부에서 상부로 갈수록 폭이 커지는 테이퍼(taper) 구조이다. 그러나 캐비티(131)는 이에 한정되는 것은 아니며, 상부와 하부의 폭이 동일한 구조로 형성된 것일 수도 있다.The body portion 130 has an elongated shape along one direction. Thus, the body portion 130 includes side surfaces including long sides in one direction and side surfaces including short sides in the other direction. For example, the body portion 130 may be in the form of a rectangle having two long sides facing each other and two short sides facing each other. A cavity 131, in which a light emitting diode chip (not shown) is received, is formed on an upper portion of the body portion 130. Referring to FIG. 1, the cavity 131 has a tapered structure having a larger width from the lower part to the upper part. However, the cavity 131 is not limited to this, and the cavity 131 may have a structure in which the widths of the upper portion and the lower portion are the same.
제1 리드 프레임(110) 및 제2 리드 프레임(120)은 몸체부(130)의 바닥에 결합된다. 또한, 제1 리드 프레임(110) 및 제2 리드 프레임(120)은 몸체부(130) 내에서 서로 횡 방향으로 이격되도록 배치되며, 몸체부(130)에 의해서 서로 절연된다.The first lead frame 110 and the second lead frame 120 are coupled to the bottom of the body portion 130. The first lead frame 110 and the second lead frame 120 are disposed to be laterally spaced from each other in the body portion 130 and insulated from each other by the body portion 130.
제1 리드 프레임(110)은 제1 실장부(111), 제1 홈부(112), 제1 단자부(113)및 제1 접속부(114)를 포함한다. The first lead frame 110 includes a first mounting portion 111, a first groove portion 112, a first terminal portion 113, and a first connecting portion 114.
제1 리드 프레임(110)의 상면에는 제1 실장부(111)와 제1 홈부(112)가 형성된다. 제1 홈부(112)는 제1 리드 프레임(110)의 상면이 하프 에칭된 것으로 상면으로부터 오목한 구조로 형성된다. 제1 홈부(112)는 몸체부(130)로 채워진다. 제1 홈부(112)에 의해서 몸체부(130)와 제1 리드 프레임(110)의 접합 면적이 증가하여, 제1 리드 프레임(110)과 몸체부(130) 간의 결합력이 향상된다. 또한, 제1 홈부(112)에 의해서 제1 몸체부(130)의 측면에서 캐비티(131) 내부까지의 침투 경로가 증가하여, 수분 등의 외부 물질이 캐비티(131) 내로 침투하는 것을 방지할 수 있다. A first mounting portion 111 and a first groove portion 112 are formed on an upper surface of the first lead frame 110. The first trench 112 is half-etched on the top surface of the first lead frame 110 and is formed in a concave structure from the top surface. The first groove portion 112 is filled with the body portion 130. The bonding area between the body part 130 and the first lead frame 110 is increased by the first trench 112 and the bonding force between the first lead frame 110 and the body part 130 is improved. The penetration path from the side of the first body part 130 to the inside of the cavity 131 is increased by the first groove part 112 to prevent foreign substances such as moisture from penetrating into the cavity 131 have.
제1 실장부(111)는 캐비티(131) 내에서 노출된다. 제1 실장부(111)는 제1 리드 프레임(110)에서 발광 다이오드 칩(미도시)이 실장되고, 전기적으로 연결되는 부분이다. 제1 실장부(111)의 둘레를 따라 제1 홈부(112)가 형성된다. 따라서, 제1 실장부(111)는 몸체부(130)가 채워진 제1 홈부(112)보다 상부로 돌출되므로 캐비티(131)의 바닥면에서 노출된다. 도 3을 참고하면, 제1 실장부(111)는 몸체부(130)의 긴 변을 포함하는 일 측면을 따라 길게 형성될 수 있다.The first mounting portion 111 is exposed in the cavity 131. The first mounting portion 111 is a portion where the light emitting diode chip (not shown) is mounted on the first lead frame 110 and is electrically connected. The first trench 112 is formed along the periphery of the first mounting portion 111. Therefore, the first mounting portion 111 protrudes upward from the first groove portion 112 filled with the body portion 130, so that the first mounting portion 111 is exposed from the bottom surface of the cavity 131. Referring to FIG. 3, the first mounting portion 111 may be formed long along one side including a long side of the body portion 130.
제1 리드 프레임(110)의 측면은 몸체부(130)의 일 측면에서 외부로 돌출된다. 제1 단자부(113)는 몸체부(130)의 일 측면에서 노출된 제1 리드 프레임(110)의 측면을 포함한다. 즉, 제1 단자부(113)은 제1 리드 프레임(110)에서 몸체부(130)의 일 측면에서 돌출된 부분의 측면이다. 여기서, 몸체부(130)의 일 측면은 몸체부(130)의 짧은 변을 포함하는 한 측면이다. The side surface of the first lead frame 110 protrudes outward from one side of the body portion 130. The first terminal portion 113 includes a side surface of the first lead frame 110 exposed at one side of the body portion 130. That is, the first terminal portion 113 is a side surface of the first lead frame 110 protruding from one side of the body portion 130. One side of the body part 130 is one side including a short side of the body part 130.
제1 접속부(114)는 몸체부(130)의 하면에서 노출된다. 제1 접속부(114)는 회로 기판 등의 외부 구성부와 전기적으로 연결되는 부분이다. 제1 접속부(114)는 제1-1 접속부(115) 및 제1-2 접속부(116)를 포함한다. The first connection part 114 is exposed on the lower surface of the body part 130. The first connection part 114 is a part electrically connected to an external component such as a circuit board. The first connection part 114 includes a 1-1 connection part 115 and a 1-2 connection part 116. [
제1-1 접속부(115)는 제1 단자부(113)와 연결된다. 본 실시 예에서 따르면, 제1-1 접속부(115)는 제1 단자부(113)에서 연장되므로, 제1 단자부(113)와 동일하거나 유사한 크기의 폭을 가질 수 있다. 도 1 내지 도 3을 참고하면, 제1 단자부(113)는 제1 리드 프레임(110)에서 몸체부(130)의 일측면에서 돌출된 부분의 측면이므로, 제1-1 접속부(115)는 제1 리드 프레임(110)의 돌출된 부분의 하면도 포함한다. 즉, 제1-1 접속부(115)는 몸체부(130) 영역에 한정되어 위치하는 것이 아니라 몸체부(130) 외부 영역까지 연장되어 있는 넓은 면적으로 이루어진다.The 1-1 connection portion 115 is connected to the first terminal portion 113. According to the present embodiment, since the 1-1 connection portion 115 extends from the first terminal portion 113, it may have the same or similar width as the first terminal portion 113. 1 to 3, since the first terminal portion 113 is a side surface protruding from one side of the body portion 130 in the first lead frame 110, 1 < / RTI > That is, the 1-1 connection portion 115 is not limited to the body portion 130 but has a large area extending to an outer region of the body portion 130.
제1-2 접속부(116)는 제1-1 접속부(115)의 일부에서 연장되며, 긴 구조로 형성된다. 이때, 제1-2 접속부(116)는 제1-1 접속부(115)에서 제1 단자부(113)의 반대 방향에 위치하는 제2 단자부(123) 방향으로 연장된다. 도 3을 참고하면, 제1-2 접속부(116)는 제1-1 접속부(115)보다 얇은 폭을 갖는다.The 1-2 connecting portion 116 extends from a part of the 1-1 connecting portion 115 and is formed in a long structure. At this time, the 1-2 connection portion 116 extends in the direction of the second terminal portion 123 located in the direction opposite to the first terminal portion 113 in the 1-1 connection portion 115. Referring to FIG. 3, the 1-2 connecting portion 116 has a smaller width than the 1-1 connecting portion 115.
본 실시 예을 설명할 때, 제1 접속부(114)를 제1-1 접속부(115)와 제1-2 접속부(116)로 구분한 것은 설명의 편의를 위한 것으로 이들은 서로 연결된 일체형이다. The first connection unit 114 is divided into the 1-1 connection unit 115 and the 1-2 connection unit 116 for convenience of description, and they are integrally connected to each other.
제2 리드 프레임(120)은 제2 실장부(121), 제2 홈부(122), 제2 단자부(123)및 제2 접속부(124)를 포함한다. The second lead frame 120 includes a second mounting portion 121, a second groove portion 122, a second terminal portion 123, and a second connecting portion 124.
제2 리드 프레임(120)의 상면에는 제2 실장부(121)와 제2 홈부(122)가 형성된다. 제2 홈부(122)는 제2 리드 프레임(120)의 하프 에칭된 것으로 상면으로부터 오목한 구조로 형성된다. 제2 홈부(122)는 몸체부(130)로 채워진다. 제2 홈부(122)에 의해서 몸체부(130)와 제2 리드 프레임(120)의 접합 면적이 증가하여, 제2 리드 프레임(120)과 몸체부(130) 간의 결합력이 향상된다. 또한, 제1 홈부(112)와 마찬가지로 제2 홈부(122)에 의해 수분 등의 외부 물질이 캐비티(131) 내로 침투하기 위한 경로가 증가된다.A second mounting portion 121 and a second groove portion 122 are formed on the upper surface of the second lead frame 120. The second trench 122 is half-etched of the second lead frame 120 and is formed in a concave structure from the top surface. The second groove portion 122 is filled with the body portion 130. The bonding area between the body part 130 and the second lead frame 120 is increased by the second groove part 122 and the bonding force between the second lead frame 120 and the body part 130 is improved. Also, as in the case of the first groove portion 112, the second groove portion 122 increases the path for the foreign substance such as moisture to penetrate into the cavity 131. [
도 1을 참고하면, 제1 홈부(112) 및 제2 홈부(122)는 몸체부(130)의 캐비티(131) 외부에 위치한다. 그러나 제1 홈부(112) 및 제2 홈부(122)가 반드시 캐비티(131) 외부에 위치해야만 하는 것은 아니다. 제1 홈부(112) 및 제2 홈부(122)의 위치는 필요에 따라 변경될 수 있다.Referring to FIG. 1, the first groove 112 and the second groove 122 are located outside the cavity 131 of the body 130. However, the first groove portion 112 and the second groove portion 122 do not necessarily have to be located outside the cavity 131. The positions of the first groove portion 112 and the second groove portion 122 can be changed as needed.
제2 실장부(121)는 캐비티(131) 내에서 노출된다. 제2 실장부(121)는 제2 리드 프레임(120)에서 발광 다이오드 칩(미도시)이 실장되고, 전기적으로 연결되는 부분이다. 제2 실장부(121)의 둘레를 따라 제2 홈부(122)가 형성된다. 따라서, 제2 실장부(121)는 몸체부(130)가 채워진 제2 홈부(122)보다 상부로 돌출되어 캐비티(131)의 바닥면에서 노출된다. 도 3을 참고하면, 제2 실장부(121)는 몸체부(130) 긴 변을 포함하는 타 측면을 따라 길게 형성될 수 있다. 이와 같이 형성된 제2 실장부(121)는 제1 실장부(111)와 횡 방향으로 이격되도록 배치된다.The second mounting portion 121 is exposed in the cavity 131. The second mounting portion 121 is a portion where the light emitting diode chip (not shown) is mounted on the second lead frame 120 and is electrically connected. And a second groove portion 122 is formed along the periphery of the second mounting portion 121. The second mounting portion 121 protrudes upward from the second groove portion 122 filled with the body portion 130 and is exposed at the bottom surface of the cavity 131. Referring to FIG. 3, the second mounting portion 121 may be formed long along the other side including the long side of the body portion 130. The second mounting portion 121 thus formed is disposed to be laterally spaced apart from the first mounting portion 111. [
본 발명의 실시 예에서, 제1 실장부(111)와 제2 실장부(121)가 서로 이격되어 길게 형성된 구조인 것을 예시로 설명하고 있지만, 이에 한정되는 것은 아니다. 제1 실장부(111) 및 제2 실장부(121)의 구조는 캐비티(131)에 수용될 발광 다이오드 칩의 구조에 따라 변경될 수 있다.In the embodiment of the present invention, the first mounting portion 111 and the second mounting portion 121 are spaced apart from each other, but the present invention is not limited thereto. The structure of the first mounting portion 111 and the second mounting portion 121 may be changed according to the structure of the light emitting diode chip to be accommodated in the cavity 131.
제2 리드 프레임(120)의 측면은 몸체부(130)의 짧은 변을 포함하는 타 측면에서 외부로 돌출된다. 제2 단자부(123)는 몸체부(130)의 타 측면에서 노출된 제2 리드 프레임(120)의 측면을 포함한다. 즉, 제2 단자부(123)은 제2 리드 프레임(120)에서 몸체부(130)의 타 측면에서 돌출된 부분의 측면이다. The side surface of the second lead frame 120 protrudes outward from the other side including the short side of the body part 130. [ The second terminal portion 123 includes a side surface of the second lead frame 120 exposed from the other side of the body portion 130. In other words, the second terminal portion 123 is a side surface of the second lead frame 120 protruding from the other side of the body portion 130.
도면에 도시된 바와 같이, 제1 단자부(113)는 몸체부(130)의 일 측면에서 돌출되며, 몸체부(130)의 일측면을 따라 형성된다. 또한, 제2 단자부(123)는 몸체부(130)의 타 측면에서 돌출되며, 몸체부(130)의 타 측면을 따라 형성된다.As shown in the figure, the first terminal portion 113 protrudes from one side of the body portion 130 and is formed along one side of the body portion 130. The second terminal portion 123 protrudes from the other side of the body portion 130 and is formed along the other side of the body portion 130.
이와 같이, 몸체부(130)의 일 측면 및 타 측면에서 측 방향으로 돌출되도록 형성된 제1 단자부(113) 및 제2 단자부(123)는 광을 반사시킬 수 있다. As described above, the first terminal portion 113 and the second terminal portion 123 formed to protrude laterally from one side surface and the other side surface of the body portion 130 can reflect light.
백라이트 유닛에서 도광판(미도시)을 향하는 광의 일부는 도광판에 의해서 반사되어 회로 기판(미도시)을 향할 수 있다. 이때, 백라이트 유닛에 본 실시 예의 패키지 기판(100)이 적용되면, 외부로 돌출된 제1 단자부(113) 및 제2 단자부(123)에 의해서 회로 기판을 향하는 광이 반사되어 다시 도광판(미도시)에 입사될 수 있다. 즉, 본 실시 예에 따른 패키지 기판(100)은 도광판에서 반사된 광이 패키지와 패키지 사이로 흡수되는 것을 방지하고 다시 도광판으로 입사되도록 반사시킨다. 따라서, 본 발명의 실시 예에 따른 패키지 기판(100)이 백라이트 유닛에 적용되며, 패키지와 패키지 사이에 의해서 도광판에 암점이 발생하는 것을 방지할 수 있다.종래에는 패키지 기판의 한 측면에 양 극성의 단자부가 모두 배치되어 있어, 각각의 단자부는 좁은 폭을 갖도록 형성될 수 밖에 없다. 즉, 종래의 패키지 기판은 단자부의 면적이 충분하지 않았다. 따라서, 패키지 기판 또는 발광 다이오드 패키지의 불량품과 우량품을 판별하는 분류 공정에서 프로브와 단자부 간의 접촉 불량으로 우량품이 불량품으로 판별되는 경우도 발생한다.A part of the light from the backlight unit toward the light guide plate (not shown) can be reflected by the light guide plate and directed toward the circuit board (not shown). At this time, when the package substrate 100 of this embodiment is applied to the backlight unit, the light directed toward the circuit board is reflected by the first terminal portion 113 and the second terminal portion 123 protruding to the outside, Lt; / RTI > That is, the package substrate 100 according to the present embodiment prevents the light reflected by the light guide plate from being absorbed between the package and the package, and reflects the light to be incident on the light guide plate. Accordingly, the package substrate 100 according to the embodiment of the present invention is applied to the backlight unit, and it is possible to prevent the occurrence of a dark spot on the light guide plate between the package and the package. The terminal portions are all disposed, and each of the terminal portions is formed to have a narrow width. That is, the area of the terminal portion of the conventional package substrate is not sufficient. Therefore, in a sorting process for distinguishing a defective product and a good product from a package substrate or a light emitting diode package, a defective product may be discriminated as a defective product due to poor contact between the probe and the terminal portion.
본 발명의 실시 예에 따른 패키지 기판(100)은 제1 단자부(113) 및 제2 단자부(123)를 패키지 기판(100) 또는 발광 다이오드 패키지를 테스트 할 때 프로브(probe)를 통해 전류가 인가되는 부분으로 이용할 수 있다. 본 실시 예에 따르면, 몸체부(130)의 일 측면에는 제1 단자부(113)만 배치되므로, 제1 단자부(113)는 넓은 면적으로 형성될 수 있다. 또한, 몸체부(130)의 타 측면에는 제2 단자부(123)만 배치되므로, 제2 단자부(123)는 넓은 면적으로 형성될 수 있다. 패키지 기판(100)은 몸체부(130)의 한 측면에 하나의 단자부만 형성되므로, 종래에 패키지 기판의 단자부보다 큰 면적을 갖는다.The package substrate 100 according to the embodiment of the present invention may be configured such that the first terminal portion 113 and the second terminal portion 123 are electrically connected to each other through a probe when the package substrate 100 or the LED package is tested Can be used as a part. According to the present embodiment, since only the first terminal portion 113 is disposed on one side of the body portion 130, the first terminal portion 113 can be formed in a wide area. In addition, since only the second terminal portion 123 is disposed on the other side of the body portion 130, the second terminal portion 123 can be formed in a wide area. Since the package substrate 100 has only one terminal portion on one side of the body portion 130, it has a larger area than the terminal portion of the package substrate conventionally.
따라서, 본 발명의 실시 예의 패키지 기판(100)은 프로브가 접촉하는 단자부의 면적이 충분하므로, 프로브와 단자부 간의 접촉 불량을 방지할 수 있다. 이에 따라 패키지 기판 또는 발광 다이오드 패키지에 수행되는 분류 공정을 포함하는 테스트의 오류를 방지하여, 테스트 신뢰성을 향상시킬 수 있다.Therefore, in the package substrate 100 of the embodiment of the present invention, since the area of the terminal portion in contact with the probe is sufficient, the contact failure between the probe and the terminal portion can be prevented. Thereby preventing errors in the test including the sorting process performed on the package substrate or the light emitting diode package, thereby improving the test reliability.
제2 접속부(124)는 몸체부(130)의 하면에서 노출된다. 제2 접속부(124)는 제2-1 접속부(125) 및 제2-2 접속부(126)를 포함한다. The second connection part 124 is exposed at the lower surface of the body part 130. The second connection portion 124 includes the second-first connection portion 125 and the second-second connection portion 126.
제2-1 접속부(125)는 제2 단자부(123)와 연결된다. 본 실시 예에 따르면, 제2-1 접속부(125)는 제2 단자부(123)에서 연장되므로, 제2 단자부(123)와 동일하거나 유사한 크기의 폭을 가질 수 있다. 또한, 제2-1 접속부(125) 역시 제1-1 접속부(115)와 마찬가지로, 몸체부(130) 영역 내에 한정되어 위치하는 것이 아니라 몸체부(130)의 외부 영역까지 연장되어 있는 넓은 면적으로 이루어 진다.The second-second connecting portion 125 is connected to the second terminal portion 123. According to this embodiment, since the second-second connecting portion 125 extends from the second terminal portion 123, it may have the same or similar width as the second terminal portion 123. Like the 1-1 connection portion 115, the 2-1 connection portion 125 is not limited within the body portion 130 but may be formed in a wide area extending to the outer region of the body portion 130 .
제2-2 접속부(126)는 제2-1 접속부(125)의 일부에서 연장되며, 긴 구조로 형성된다. 이때, 제2-2 접속부(126)는 제2-1 접속부(125)에서 제1 단자부(113) 방향으로 연장된다. 도 3을 참고하면, 제2-2 접속부(126)는 제2-1 접속부(125)보다 얇은 폭을 갖는다.The second-second connecting portion 126 extends from a part of the second-first connecting portion 125 and is formed in a long structure. At this time, the second-second connecting portion 126 extends from the second-first connecting portion 125 toward the first terminal portion 113. Referring to FIG. 3, the second-second connecting portion 126 has a smaller width than the second-type connecting portion 125.
도 2를 참고하면, 제1-2 접속부(116)와 제2-2 접속부(126)는 서로 평행하게 배치된다. 또한, 제1-2 접속부(116)와 제2-2 접속부(126) 중 적어도 하나는 일 방향에 수직한 중심선을 가로지른다. Referring to FIG. 2, the 1-2 connecting portion 116 and the 2-2 connecting portion 126 are disposed in parallel with each other. Also, at least one of the first-second connecting portion 116 and the second-second connecting portion 126 crosses a center line perpendicular to one direction.
종래의 패키지 기판은 접속부가 몸체부의 내부 영역에 한정되어 위치하고, 폭이 좁은 긴 구조로 형성된다. 그러나 본 발명의 실시 예에 따른 패키지 기판(100)은 큰 폭을 가지며, 몸체부(130)의 외부 영역까지 연장된 제1-1 접속부(115) 및 제2-1 접속부(125)와 길이가 긴 제1-2 접속부(116) 및 제2-2 접속부(126)를 포함한다. 따라서, 본 발명의 실시 예에 따른 패키지 기판(100)은 종래의 패키지 기판에 비해 접속부가 넓은 면적으로 이루어지므로, 외부 구성와의 안정적이고 신뢰성 있는 전기적 연결이 가능하다.In the conventional package substrate, the connection portion is located in the inner region of the body portion and is formed in a narrow and narrow structure. However, the package substrate 100 according to the embodiment of the present invention has a large width and has a first connecting portion 115 and a second connecting portion 125 extending to the outer region of the body portion 130, And a long second 1-2 connection portion 116 and a second-second connection portion 126. Therefore, the package substrate 100 according to the embodiment of the present invention has a wider area than that of the conventional package substrate, so that stable and reliable electrical connection with the external structure is possible.
또한, 본 발명의 패키지 기판(100)은 한 측면당 한 극성의 단자부만 형성되어 있으므로, 측면을 통한 외부 구성과의 안정적인 전기적 연결이 용이하다. 또한, 본 발명의 패키지 기판(100)은 하면에 위치한 제1 접속부(114) 및 제2 접속부(124)와 측면에 형성된 제1 단자부(113) 및 제2 단자부(123)를 모두 외부 구성부와의 전기적 연결에 이용할 수 있다. 즉, 패키지 기판(100)은 하면과 측면을 포함하는 더 넓은 면적을 통해 외부 구성과 전기적 연결이 가능하다.In addition, since the package substrate 100 of the present invention has only one terminal portion of one polarity per side, it is easy to stably electrically connect to the external structure through the side surface. The package substrate 100 of the present invention includes a first connection part 114 and a second connection part 124 located on the lower surface and a first terminal part 113 and a second terminal part 123 formed on the side surface, For example. That is, the package substrate 100 is electrically connectable with the external configuration through a wider area including a lower surface and a side surface.
또한, 종래에는 패키지 기판의 양 측면에 각각 양 극성의 단자가 모두 위치한다. 따라서, 양 단자가 서로 가까이 위치하므로 프로브가 한 측면에서 양 극성의 단자와 접촉할 때, 합선이 될 수 있다. 본 발명의 실시 예에 따른 패키지 기판(100)은 한 측면에 한 극성의 단자만 위치하므로, 프로브가 양 극성의 단자와 접촉할 때, 합선되는 것을 방지할 수 있다.Conventionally, both terminals of both polarities are located on both sides of the package substrate. Therefore, when the probes are in contact with the terminals of both polarities on one side, they can be short-circuited. Since the package substrate 100 according to the embodiment of the present invention has only one terminal of polarity on one side, it can be prevented that the probe is short-circuited when the terminal contacts the terminals of both polarities.
또한, 본 발명의 실시 예에 따른 패키지 기판(100)은 제1 접속부(114)와 제2 접속부(124) 중 적어도 하나가 일 방향에 수직한 중심선을 가로지르므로 패키지 기판(100) 중앙부의 강도를 강화 시킬 수 있다.In the package substrate 100 according to the embodiment of the present invention, since at least one of the first connecting portion 114 and the second connecting portion 124 crosses a center line perpendicular to one direction, the strength of the central portion of the package substrate 100 .
본 발명의 실시 예에 따르면, 제1-1 접속부(115) 및 제2-1 접속부(125)는 일부가 다른 일부보다 큰 폭을 갖도록 형성된다. 제1-1 접속부(115)에서 큰 폭을 갖는 일부는 제1 단자부(113)로부터 연장된 부분을 포함하며, 제2-1 접속부(125)에서 큰 폭을 갖는 일부는 제2 단자부(123)로부터 연장된 부분을 포함한다. 또한, 제1-1 접속부(115)에서 작은 폭을 갖는 일부는 제1-2 접속부(116)가 연장되는 부분을 포함하며, 제2-1 접속부(125)에서 작은 폭을 갖는 일부는 제2-2 접속부(126)가 연장되는 부분을 포함한다.According to the embodiment of the present invention, the 1-1 connection portion 115 and the 2-1 connection portion 125 are formed so that a part thereof has a larger width than the other part. The portion having a large width at the 1-1 connection portion 115 includes a portion extending from the first terminal portion 113 and the portion having a large width at the 2-1 connection portion 125 includes the second terminal portion 123, As shown in FIG. The portion having a small width at the 1-1 connecting portion 115 includes a portion at which the 1-2 connecting portion 116 extends, and a portion having a small width at the 2-1 connecting portion 125 includes a portion -2 connection portion 126 is extended.
설명의 편의를 위해서 제1-1 접속부(115)와 제2-1 접속부(125)에서 일부가 큰 폭을 갖도록 확장된 부분을 제1 확장부(117) 및 제2 확장부(127)로 설명하도록 한다. 도 2를 참고하면, 제1 확장부(117)와 제2 확장부(127)를 제외한 제1 접속부(114)와 제2 접속부(124)의 다른 부분은 모두 제1 확장부(117)와 제2 확장부(127)의 내측 영역에 위치한다.For convenience of explanation, the first extended portion 117 and the second extended portion 127 describe a portion of the 1-1 connecting portion 115 and the 2-1 connecting portion 125, . 2, the first connecting part 114 and the other part of the second connecting part 124 except for the first extending part 117 and the second extending part 127 are both connected to the first extending part 117 and the second connecting part 124, 2 extension portion 127 of the first embodiment.
제1 확장부(117) 및 제2 확장부(127)의 측면은 서로 연결되어 있는 복수의 리드 프레임을 개별적으로 분리하는 분리 공정에서 컷팅(Cutting)되는 부분이다. 제1 확장부(117) 및 제2 확장부(127)가 없다면, 리드 프레임을 분리하는 공정 중에 컷팅날이 제1 리드 프레임(110)과 제2 리드 프레임(120) 각각의 한 측면을 스치면서 버(burr)가 발생할 수 있다. 즉, 제1 확장부(117)와 제2 확장부(127)는 리드 프레임의 분리 공정에서 제1 확장부(117)와 제2 확장부(127) 이외에 부분이 컷팅날과 접촉하는 것을 방지하여 버가 발생하는 것을 방지할 수 있다.The side surfaces of the first extension portion 117 and the second extension portion 127 are cut in a separation process for separating a plurality of lead frames connected to each other. In the absence of the first extension 117 and the second extension 127, during the process of separating the leadframe, the cutting edge swings one side of each of the first and second leadframes 110 and 120 A burr may occur. That is, the first extension portion 117 and the second extension portion 127 prevent the portion other than the first extension portion 117 and the second extension portion 127 from contacting the cutting edge in the lead frame separation process It is possible to prevent occurrence of burrs.
또한, 제1 확장부(117) 및 제2 확장부(127)는 제1 단자부(113) 및 제2 단자부(123)와 연결되어 일부가 몸체부(130)의 양 측면에서 돌출된다. 따라서, 제1 확장부(117) 및 제2 확장부(127)도 제1 단자부(113) 및 제2 단자부(123)와 더불어 광을 반사시키는 역할을 할 수 있다. 이와 같이, 제1 확장부(117) 및 제2 확장부(127)는 리드 프레임의 분리 공정에서 버가 발생하는 것을 방지하며, 최대한 많은 광을 반사시킬 수 있는 폭을 갖도록 형성될 수 있다.The first extension portion 117 and the second extension portion 127 are connected to the first terminal portion 113 and the second terminal portion 123 so that a part thereof protrudes from both sides of the body portion 130. Accordingly, the first extension portion 117 and the second extension portion 127 can also function to reflect light together with the first terminal portion 113 and the second terminal portion 123. [ As described above, the first extension portion 117 and the second extension portion 127 can be formed so as to prevent burrs in the lead frame separation process and to have a width capable of reflecting as much light as possible.
또한, 본 발명의 실시 예에 따르면, 제1-2 접속부(116)와 제2-1 접속부(125) 및 2-2 접속부(126)와 제1-1 접속부(115) 간의 이격 거리 거리는 제1-2 접속부(116)와 제2-2 접속부(126) 간의 이격 거리보다 크다.Also, according to the embodiment of the present invention, the separation distance between the 1-2 connection 116 and the 2-1 connection 125, the 2-2 connection 126, and the 1-1 connection 115 is the first 2 connection portion 116 and the second-second connection portion 126. [0064]
제1-1 접속부(115)와 제2-1 접속부(125)는 큰 면적을 가지므로, 패키지 기판(100)이 외부 구성과의 접착될 때, 많은 양의 접착제가 도포된다. 이때, 접착제의 양이 많아지면, 패키지 기판(100)을 외부 구성에 실장한 상태로 가압하였을 때, 접착제가 제1-1 접속부(115)와 제2-1 접속부(125)의 바깥 영역으로 흘러 나올 수 있다. 이때, 제1-1 접속부(115)와 제2-2 접속부(126)가 서로 통전되거나 제2-1 접속부(125)와 제1-2 접속부(116)가 서로 통전될 수 있다. 따라서, 이를 방지하기 위해서 제1-2 접속부(116)와 제2-2 접속부(126)가 접착제에 의해서 통전되지 않을 정도의 이격 거리를 기준으로 하여 제1-2 접속부(116)와 제2-1 접속부(125) 및 2-2 접속부(126)와 제1-1 접속부(115)는 이보다 큰 이격 거리를 가져야 한다.Since the 1-1 connecting portion 115 and the 2-1 connecting portion 125 have a large area, when the package substrate 100 is bonded to the external structure, a large amount of adhesive is applied. At this time, when the amount of the adhesive increases, the adhesive flows to the outer region of the 1-1 connection portion 115 and the 2-1 connection portion 125 when the package substrate 100 is pressed in an external configuration Can come out. At this time, the 1-1 connection portion 115 and the 2-2 connection portion 126 may be electrically connected to each other, or the 2-1 connection portion 125 and the 1-2 connection portion 116 may be electrically connected to each other. Accordingly, in order to prevent this, the second-second connecting portion 116 and the second-second connecting portion 126 are formed on the basis of the separation distance to the extent that the second- 1 connection section 125 and the 2-2 connection section 126 and the 1-1 connection section 115 must have a greater distance from each other.
그러나 제1-2 접속부(116)와 제2-1 접속부(125) 및 2-2 접속부(126)와 제1-1 접속부(115)가 너무 큰 이격 거리를 가지게 되면, 패키지 기판(100)의 크기가 커진다. 따라서, 패키지 기판(100)이 커지거나 길어지는 것을 방지하기 위해서 제1-2 접속부(116)와 제2-1 접속부(125) 및 2-2 접속부(126)와 제1-1 접속부(115) 간의 이격 거리 거리는 제1-2 접속부(116)와 몸체부(130)의 측면 간의 이격 거리 및 제2-2 접속부(126)와 몸체부(130)의 측면 간의 이격 거리보다 작아야 할 것이다.However, if the second-first connecting portion 116, the second-second connecting portion 125, the second-second connecting portion 126, and the first connecting portion 115 are separated from each other by too large a distance, The size increases. Accordingly, in order to prevent the package substrate 100 from becoming larger or longer, the second-first connecting portion 116, the second-second connecting portion 125, the second-second connecting portion 126, The distance between the second-second connecting portion 126 and the side surface of the body portion 130 should be smaller than the distance between the first-second connecting portion 116 and the side surface of the body portion 130.
도 4 및 도 5는 본 발명의 제2 실시 예에 따른 패키지 기판을 나타낸 예시도이다.4 and 5 are views showing an example of a package substrate according to a second embodiment of the present invention.
도 4는 제2 실시 예에 따른 패키지 기판의 단면도이며, 도 5는 제2 실시 예에 따른 패키지 기판의 하부 평면도이다.4 is a cross-sectional view of the package substrate according to the second embodiment, and FIG. 5 is a bottom plan view of the package substrate according to the second embodiment.
제2 실시 예에 따른 패키지 기판(200)에 대한 설명에서, 제1 실시 예에 따른 패키지 기판(도 1 내지 도 3의 100)과 동일한 구성부에 대한 설명은 생략하고, 차이점 위주로 설명하도록 한다.In the description of the package substrate 200 according to the second embodiment, description of the same components as those of the package substrate 100 according to the first embodiment (100 in Figs. 1 to 3) will be omitted, and differences will be mainly described.
도 4 및 도 5를 참고하면, 제2 실시 예에 따른 패키지 기판(200)은 제1 리드 프레임(210)에 제1 관통홀(211)이 형성되며, 제2 리드 프레임(220)에 제2 관통홀(221)이 형성된다.4 and 5, the package substrate 200 according to the second embodiment has a first through hole 211 formed in the first lead frame 210 and a second through hole 211 formed in the second lead frame 220 A through hole 221 is formed.
제1 관통홀(211)은 제1 리드 프레임(210)의 제1 홈부(112)와 제1 단자부(113) 사이에 형성되며, 제1 리드 프레임(210)의 상면에서 하면까지 관통하도록 형성된다. 또한, 제2 관통홀(221)은 제2 리드 프레임(220)의 제2 홈부(122)와 제2 단자부(123) 사이에 형성되며, 제2 리드 프레임(220)의 상면에서 하면까지 관통하도록 형성된다.The first through hole 211 is formed between the first groove portion 112 of the first lead frame 210 and the first terminal portion 113 and is formed to penetrate from the upper surface to the lower surface of the first lead frame 210 . The second through hole 221 is formed between the second groove part 122 and the second terminal part 123 of the second lead frame 220 and penetrates from the upper surface to the lower surface of the second lead frame 220 .
제1 리드 프레임(210)을 관통하는 제1 관통홀(211)과 제2 리드 프레임(220)을 관통하는 제2 관통홀(221)은 몸체부(130)로 채워진다. 제1 관통홀(211) 및 제2 관통홀(221)에 의해서 제1 리드 프레임(210) 및 제2 리드 프레임(220)과 몸체부(130) 간의 접합 면적이 증가하여 서로 간의 결합력이 향상된다.The first through hole 211 passing through the first lead frame 210 and the second through hole 221 passing through the second lead frame 220 are filled with the body portion 130. The bonding areas between the first lead frame 210 and the second lead frame 220 and the body part 130 are increased by the first through holes 211 and the second through holes 221 to improve the bonding force between the first and second lead frames 220 and 220 .
제1 관통홀(211) 및 제2 관통홀(221)은 상부와 하부가 동일한 폭을 갖거나 상부와 하부의 폭이 서로 다른 단차 구조일 수 있다.The first through holes 211 and the second through holes 221 may have a stepped structure in which the upper and lower portions have the same width or the widths of the upper portion and the lower portion are different from each other.
예를 들면, 제1 관통홀(211) 및 제2 관통홀(221)은 도 4에 도시된 바와 같이 상부 폭이 하부 폭보다 작은 형태일 수 있다. 이 경우, 제1 관통홀(211)의 하부에 채워진 몸체부(130)가 폭이 작은 제1 관통홀(211)의 상부에 걸려, 몸체부(130)가 제1 리드 프레임(210)에 고정될 수 있다. 또한, 제2 관통홀(221)이 상부가 하부보다 폭이 작은 경우, 몸체부(130)가 제2 리드 프레임(220)에 고정될 수 있다. 따라서, 이와 같은 구조의 제1 관통홀(211) 및 제2 관통홀(221)을 갖는 패키지 기판(200)은 몸체부(130)와 제1 리드 프레임(210) 및 제2 리드 프레임(220) 간의 더 견고한 결합이 가능하다. For example, the first through holes 211 and the second through holes 221 may have a top width smaller than a bottom width as shown in FIG. In this case, the body portion 130 filled in the lower portion of the first through hole 211 is hooked on the upper portion of the first through hole 211 having a small width, so that the body portion 130 is fixed to the first lead frame 210 . When the upper portion of the second through hole 221 is narrower than the lower portion of the second through hole 221, the body portion 130 may be fixed to the second lead frame 220. Accordingly, the package substrate 200 having the first through holes 211 and the second through holes 221 having the above-described structure has the body portion 130, the first lead frame 210 and the second lead frame 220, More robust coupling between the two is possible.
도 6 내지 도 8은 본 발명의 일 실시 예에 따른 발광 다이오드 패키지를 설명하기 위한 예시도이다.6 to 8 are diagrams for explaining a light emitting diode package according to an embodiment of the present invention.
도 6은 본 발명의 일 실시 예에 따른 발광 다이오드 패키지를 나타낸 예시도이다. 또한, 도 7은 발광 다이오드 패키지에 실장되는 발광 다이오드 칩의 하부 평면도이며, 도 8은 발광 다이오드 칩의 단면도이다.6 is an exemplary view illustrating a light emitting diode package according to an embodiment of the present invention. 7 is a bottom plan view of the light emitting diode chip mounted on the light emitting diode package, and FIG. 8 is a sectional view of the light emitting diode chip.
일 실시 예에 따른 발광 다이오드 패키지(300)는 패키지 기판(200), 발광 다이오드 칩(400) 및 밀봉 부재(310)를 포함한다.The light emitting diode package 300 according to one embodiment includes a package substrate 200, a light emitting diode chip 400, and a sealing member 310.
도 6에 도시된 패키지 기판(200)은 제2 실시 예의 패키지 기판이다. 그러나 패키지 기판(200)은 제2 실시 예의 패키지 기판으로 한정되는 것은 아니며, 제1 실시 예의 패키지 기판도 될 수 있다. 발광 다이오드 칩(400)은 패키지 기판(200)의 캐비티(131)에 배치된다. 발광 다이오드 칩(400)은 하면에 양 극성의 범프 패드(미도시)가 형성된 구조일 수 있다. 또한, 발광 다이오드 칩(400)의 범프 패드는 패키지 기판(200)의 제1 실장부(111) 및 제2 실장부(121)와 대응하는 구조일 수 있다.The package substrate 200 shown in Fig. 6 is the package substrate of the second embodiment. However, the package substrate 200 is not limited to the package substrate of the second embodiment, and may be the package substrate of the first embodiment. The light emitting diode chip 400 is disposed in the cavity 131 of the package substrate 200. The light emitting diode chip 400 may have a structure in which bump pads (not shown) having both polarities are formed on the lower surface. The bump pad of the light emitting diode chip 400 may have a structure corresponding to the first mounting portion 111 and the second mounting portion 121 of the package substrate 200.
도 7 및 도 8을 참고하면, 일 실시 예에 따른 발광 다이오드 칩(400)은 기판(410), 발광 구조체(420), 오믹 반사층(430), 제1 절연층(440), 제1 패드 금속층(451), 제2 패드 금속층(452), 제2 절연층(460), 제1 범프 패드(470) 및 제2 범프 패드(480)를 포함한다. 상기의 구성을 포함하는 발광 다이오드 칩(400)은 하부 테두리가 긴 변과 짧은 변을 갖는 일 방향으로 긴 구조이다. 여기서, 긴 변은 하부 테두리 중 길이가 긴 변이며, 짧은 변은 긴 변에 비해 길이가 짧은 변이다.7 and 8, a light emitting diode chip 400 according to one embodiment includes a substrate 410, a light emitting structure 420, an ohmic reflective layer 430, a first insulating layer 440, A second pad metal layer 452, a second insulating layer 460, a first bump pad 470, and a second bump pad 480. The first pad layer 451, the second pad metal layer 452, the second insulating layer 460, The light emitting diode chip 400 having the above-described structure has a long structure in one direction with a lower edge and a shorter edge. Here, the long side is the longer side of the lower frame, and the shorter side is the shorter side than the long side.
기판(410)은 질화갈륨계 반도체층을 성장시킬 수 있는 기판이면 특별히 제한되지 않는다. 예를 들어, 기판(410)은 사파이어 기판, 질화갈륨 기판, SiC 기판 등 다양할 수 있으며, 패터닝된 사파이어 기판일 수 있다. 기판(410)은 긴 변 및 짧은 변을 가지는 직사각형 형상을 가진다.The substrate 410 is not particularly limited as long as the substrate can grow the gallium nitride-based semiconductor layer. For example, the substrate 410 may be a sapphire substrate, a gallium nitride substrate, a SiC substrate, or the like, and may be a patterned sapphire substrate. The substrate 410 has a rectangular shape with long sides and short sides.
기판(410) 하부에는 발광 구조체(420)가 형성된다. 발광 구조체(420)는 제1 도전형 반도체층(421), 활성층(422), 제2 도전형 반도체층(423)을 포함한다.A light emitting structure 420 is formed under the substrate 410. The light emitting structure 420 includes a first conductive semiconductor layer 421, an active layer 422, and a second conductive semiconductor layer 423.
제1 도전형 반도체층(421)은 기판(410) 하부에 형성된다. 제1 도전형 반도체층(421)은 기판(410) 상에서 성장된 층일 수 있으며, 질화갈륨계 반도체층일 수 있다. 제1 도전형 반도체층(421)은 n형 불순물, 예컨대 Si이 도핑된 질화갈륨계 반도체층일 수 있다. 여기서, 제1 도전형 반도체층(421)이 기판(410)과 구별되는 것으로 설명하지만, 기판(410) 질화갈륨 기판인 경우, 이들 사이의 경계는 명확하게 구별되지 않을 수 있다. The first conductive semiconductor layer 421 is formed under the substrate 410. The first conductive semiconductor layer 421 may be a layer grown on the substrate 410 and may be a gallium nitride semiconductor layer. The first conductivity type semiconductor layer 421 may be an n-type impurity, for example, a silicon-doped gallium nitride semiconductor layer. Although the first conductive semiconductor layer 421 is described as being distinguished from the substrate 410, the boundary between the first conductive semiconductor layer 421 and the substrate 410 may not be clearly distinguished.
제1 도전형 반도체층(421) 하부에 메사(M)가 배치된다. 메사(M)는 제1 도전형 반도체층(421) 영역 내에 위치할 수 있다. 따라서, 제1 도전형 반도체층의 가장자리 영역들은 메사(M)에 의해 덮이지 않고 외부에 노출될 수 있다. 또한, 메사(M)는 제1 도전형 반도체층(421)의 일부를 포함할 수 있다.A mesa M is disposed under the first conductive semiconductor layer 421. The mesa M may be located in the region of the first conductivity type semiconductor layer 421. Accordingly, the edge regions of the first conductivity type semiconductor layer can be exposed to the outside without being covered by the mesa M. In addition, the mesa M may include a part of the first conductivity type semiconductor layer 421.
메사(M)는 제2 도전형 반도체층(423)과 활성층(422)을 포함한다. 활성층(422)은 제1 도전형 반도체층(421) 하부에 형성되며, 제2 도전형 반도체층(423)은 활성층(422) 하부에 형성된다. 활성층(422)은 단일 양자우물 구조 또는 다중 양자우물 구조를 가질 수 있다. 활성층(422) 내에서 우물층의 조성 및 두께는 생성되는 광의 파장을 결정한다. 특히, 우물층의 조성을 조절함으로써 자외선, 청색광 또는 녹색광을 생성하는 활성층을 제공할 수 있다.The mesa M includes a second conductivity type semiconductor layer 423 and an active layer 422. The active layer 422 is formed under the first conductivity type semiconductor layer 421 and the second conductivity type semiconductor layer 423 is formed under the active layer 422. The active layer 422 may have a single quantum well structure or a multiple quantum well structure. The composition and thickness of the well layer in the active layer 422 determine the wavelength of the generated light. In particular, by controlling the composition of the well layer, it is possible to provide an active layer that generates ultraviolet light, blue light or green light.
제2 도전형 반도체층(423)은 p형 불순물, 예컨대 Mg이 도핑된 질화갈륨계 반도체층일 수 있다. The second conductivity type semiconductor layer 423 may be a p-type impurity, for example, a gallium nitride-based semiconductor layer doped with Mg.
제1 도전형 반도체층(421) 및 제2 도전형 반도체층(423)은 각각 단일층일 수 있으나, 이에 한정되는 것은 아니다. 제1 도전형 반도체층(421) 및 제2 도전형 반도체층(423)은 다중층일 수도 있으며, 초격자층을 포함할 수도 있다. The first conductive semiconductor layer 421 and the second conductive semiconductor layer 423 may each be a single layer, but the present invention is not limited thereto. The first conductivity type semiconductor layer 421 and the second conductivity type semiconductor layer 423 may be multilayered or may include a superlattice layer.
제1 도전형 반도체층(421), 활성층(422) 및 제2 도전형 반도체층(423)은 금속유기화학 기상 성장법(MOCVD) 또는 분자선 에피택시(MBE)와 같은 공지의 방법을 이용하여 챔버 내에서 기판(410)에 성장되어 형성될 수 있다.The first conductivity type semiconductor layer 421, the active layer 422 and the second conductivity type semiconductor layer 423 may be formed by a known method such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) And may be formed on the substrate 410 by being grown.
메사(M)는 제1 도전형 반도체층(421)으로부터 멀어질수록 면적이 좁아지도록 경사진 측면을 가진다. 이에 따라, 메사(M)의 측면을 덮는 층들을 안정하게 형성할 수 있다.The mesa M has a side inclined so that the area becomes narrower as the distance from the first conductivity type semiconductor layer 421 decreases. Thus, the layers covering the side surfaces of the mesa M can be stably formed.
한편, 메사(M)는 기판(410)의 형상을 따라 기다란 직사각형 형상을 가질 수 있으며, 기판(410)의 길이 방향을 따라 제1 도전형 반도체층(421)을 노출시키는 그루브를 포함할 수 있다. 그루브는 도 7에 도시한 바와 같이, 기판의 일측 짧은 변에 인접한 메사(M)의 짧은 변 중앙에서 기판(410) 긴 변을 따라 메사(M)의 중심을 지날 수 있다. 그루브의 길이는 메사(M)의 긴 변의 길이보다 짧으며, 따라서, 메사(M)의 타짧은 변은 그루브로부터 이격된다.The mesa M may have an elongated rectangular shape along the shape of the substrate 410 and may include a groove exposing the first conductive semiconductor layer 421 along the longitudinal direction of the substrate 410 . The groove can pass the center of the mesa M along the long side of the substrate 410 at the short side center of the mesa M adjacent to one side short side of the substrate as shown in Fig. The length of the groove is shorter than the length of the long side of the mesa (M), so that the other short side of the mesa (M) is spaced from the groove.
오믹 반사층(430)은 제2 도전형 반도체층(423) 하부에 형성되어, 제2 도전형 반도체층(423)과 접촉된다. 오믹 반사층(430)은 메사(M) 상부 영역에서 메사의 거의 전 영역에 걸쳐 배치될 수 있다. 도 8을 참고하면, 오믹 반사층(430)이 메사(M) 상부 영역 전체를 덮도록 배치되지는 않는다. 예를 들어, 오믹 반사층(430)은 메사(M) 상부 영역의 80% 이상을 덮을 수 있다. 더 나아가 오믹 반사층(430)은 메사(M) 상부 영역의 90% 이상을 덮을 수 있다. 본 도면에서는 미도시 되었지만, 메사(M) 상부 영역에서 오믹 반사층(430)의 주변의 메사(M)를 덮도록 오믹 산화물층(미도시)이 더 형성될 수 있다. 오믹 반사층(430)의 주위에 오믹 산화물층(미도시)을 배치된 경우, 오믹 콘택 영역이 넓어지므로 발광 다이오드의 순방향 전압을 낮출 수 있다.The ohmic reflective layer 430 is formed under the second conductive type semiconductor layer 423 and is in contact with the second conductive type semiconductor layer 423. The ohmic reflective layer 430 may be disposed over substantially the entire region of the mesa in the mesa (M) upper region. 8, the ohmic reflective layer 430 is not arranged to cover the entire mesa M upper region. For example, the ohmic reflective layer 430 may cover more than 80% of the mesa M upper region. Further, the ohmic reflective layer 430 may cover 90% or more of the upper region of the mesa M. An ohmic oxide layer (not shown) may be further formed to cover the mesa M in the vicinity of the ohmic reflective layer 430 in the upper region of the mesa M. When an ohmic oxide layer (not shown) is disposed around the ohmic reflective layer 430, the ohmic contact region is widened, so that the forward voltage of the light emitting diode can be lowered.
오믹 반사층(430)은 반사성을 갖는 금속층을 포함할 수 있다. 따라서, 오믹 반사층(430)은 활성층(422)에서 생성되어 오믹 반사층(430)으로 진행하는 광을 반사시켜 기판(410)을 향하도록 할 수 있다. 예를 들어, 오믹 반사층(430)은 단일 금속층으로 형성되거나 오믹층과 반사층을 포함할 수 있다. 예를 들어, 오믹층으로는 Ni과 같은 금속으로 이루어질 수 있으며, 반사층은 Ag 또는 Al과 같이 반사율이 높은 금속으로 이루어질 수 있다. 또한, 오믹 반사층(430)은 장벽층을 포함할 수 있다. 장벽층은 Ni, Ti, 및 Au로 이루어질 수 있다. 예를 들어, 오믹 반사층은 Ni/Ag/Ni/Ti/Ni/Ti/Au/Ti의 적층 구조로 이루어질 수 있다.The ohmic reflective layer 430 may include a reflective metal layer. Accordingly, the OMR reflective layer 430 can reflect light that is generated in the active layer 422 and proceeds to the OMR reflective layer 430 to be directed to the substrate 410. For example, the ohmic reflective layer 430 may be formed of a single metal layer or may include an ohmic layer and a reflective layer. For example, the ohmic layer may be formed of a metal such as Ni, and the reflective layer may be formed of a metal having high reflectance such as Ag or Al. In addition, the ohmic reflective layer 430 may include a barrier layer. The barrier layer may be composed of Ni, Ti, and Au. For example, the ohmic reflective layer may be a stacked structure of Ni / Ag / Ni / Ti / Ni / Ti / Au / Ti.
다른 실시예에 있어서, 오믹 반사층(430)은 제2 도전형 반도체층(423)에 오믹 접촉하는 투명 산화물층, 투명 산화물층을 덮되 투명 산화물층을 노출시키는 개구부를 갖는 절연층 및 상기 절연층을 덮고 절연층의 개구부를 통해 투명 산화물층에 접속하는 금속 반사층을 포함할 수도 있다. 이와 같은 구조에 의해 전방향 반사기(omnidirectional reflector)가 제공될 수 있다.In another embodiment, the ohmic reflective layer 430 may include a transparent oxide layer that is in ohmic contact with the second conductive semiconductor layer 423, an insulating layer that covers the transparent oxide layer but has an opening that exposes the transparent oxide layer, And a metal reflection layer which is connected to the transparent oxide layer through the opening of the insulating layer. With this structure, an omnidirectional reflector can be provided.
한편, 제1 절연층(440)은 메사(M) 및 오믹 반사층(430)을 덮는다. 또한, 제1 절연층(440)은 메사(M) 측면을 덮을 수 있다. 이때, 제1 절연층(440)은 메사(M) 측면에서 노출된 제1 도전형 반도체층(421)의 일부를 덮을 수 있다. 이와 같이 형성된 제1 절연층(440)은 메사(M)의 둘레를 따라 위치하는 제1 도전형 반도체층(421)을 노출시킨다.On the other hand, the first insulating layer 440 covers the mesa M and the ohmic reflective layer 430. In addition, the first insulating layer 440 may cover the mesa M side. At this time, the first insulating layer 440 may cover a part of the first conductivity type semiconductor layer 421 exposed from the side of the mesa M. The first insulating layer 440 thus formed exposes the first conductivity type semiconductor layer 421 located along the periphery of the mesa M. [
또한, 제1 절연층(440)에는 오믹 반사층(430)을 노출시키는 적어도 하나의 개구부(441)가 형성된다. 제1 절연층(440)에 형성된 개구부(441)는 추후 제2 패드 금속층(452)이 형성될 메사(M) 하부에 형성된다. 이 개구부(441)를 통해서, 제2 패드 금속층(452)과 제2 도전형 반도체층(423)이 접속되어, 서로 전기적으로 연결된다.In addition, at least one opening 441 for exposing the OMR layer 430 is formed in the first insulating layer 440. The opening 441 formed in the first insulating layer 440 is formed below the mesa M where the second pad metal layer 452 is to be formed later. The second pad metal layer 452 and the second conductivity type semiconductor layer 423 are connected through the opening 441 and electrically connected to each other.
제1 절연층(440)은 SiO2 또는 Si3N4의 단일층으로 형성될 수 있다. 그러나 제1 절연층(440)은 이에 한정되는 것은 아니다. 예를 들어, 제1 절연층(440)은 실리콘 질화막과 실리콘 산화막을 포함하는 다층 구조로 형성될 수 있으며, 실리콘 산화막과 타이타늄 산화막을 교대로 적층한 분포 브래그 반사기를 포함할 수도 있다.The first insulating layer 440 may be formed of a single layer of SiO2 or Si3N4. However, the first insulating layer 440 is not limited thereto. For example, the first insulating layer 440 may have a multilayer structure including a silicon nitride film and a silicon oxide film, and may include a distributed Bragg reflector in which a silicon oxide film and a titanium oxide film are alternately laminated.
제1 패드 금속층(451)은 제1 절연층(440) 하부 및 제1 절연층(440)에 의해서 노출된 제1 도전형 반도체층(421) 일부의 하부에 형성된다. 제1 패드 금속층(451)은 제1 절연층(440)에 의해 메사(M) 및 오믹 반사층(430)으로부터 절연된다. 이와 같이 형성된 제1 패드 금속층(451)은 제1 도전형 반도체층(421)과 접촉되며, 서로 전기적으로 연결된다.The first pad metal layer 451 is formed under the first insulating layer 440 and a part of the first conductive semiconductor layer 421 exposed by the first insulating layer 440. The first pad metal layer 451 is insulated from the mesa M and the ohmic reflective layer 430 by a first insulating layer 440. The first pad metal layer 451 thus formed is in contact with the first conductivity type semiconductor layer 421 and is electrically connected to each other.
제2 패드 금속층(452)은 개구부(441)가 형성된 제1 절연층(440)의 하부 및 개구부(441)에 형성되되, 제1 패드 금속층(451)으로부터 이격되도록 형성된다. 이와 같이 형성된 제2 패드 금속층(452)은 개구부(441)를 통해서 오믹 반사층(430)에 전기적으로 접속된다.The second pad metal layer 452 is formed on the lower portion of the first insulating layer 440 having the opening 441 and the opening 441 and is spaced apart from the first pad metal layer 451. The second pad metal layer 452 thus formed is electrically connected to the ohmic reflective layer 430 through the opening 441.
제1 패드 금속층(451)과 제2 패드 금속층(452)은 동일 공정에서 동일 재료로 함께 형성될 수 있다. 제1 패드 금속층(451) 및 제2 패드 금속층(452)은 Al층과 같은 오믹 반사층을 포함할 수 있으며, 오믹 반사층은 Ti, Cr 또는 Ni 등의 접착층 하부에 형성될 수 있다. 또한, 오믹 반사층 하부에 Ni, Cr, Au 등의 단층 또는 복합층 구조의 보호층이 형성될 수 있다. 예를 들어, 제1 패드 금속층(451) 및 제2 패드 금속층(452)은 Cr/Al/Ni/Ti/Ni/Ti/Au/Ti의 다층 구조로 이루어질 수 있다. The first pad metal layer 451 and the second pad metal layer 452 may be formed together with the same material in the same process. The first pad metal layer 451 and the second pad metal layer 452 may include an ohmic reflective layer such as an Al layer and the ohmic reflective layer may be formed under an adhesive layer such as Ti, Cr, or Ni. Further, a protective layer of a single layer or a multiple layer structure such as Ni, Cr, Au or the like may be formed under the ohmic reflective layer. For example, the first pad metal layer 451 and the second pad metal layer 452 may have a multi-layer structure of Cr / Al / Ni / Ti / Ni / Ti / Au / Ti.
제2 절연층(460)은 제1 패드 금속층(451) 및 제2 패드 금속층(452)을 덮도록 형성된다. 제2 절연층(460)은 메사(M)의 둘레를 따라 노출된 제1 도전형 반도체층(421)을 덮을 수 있다. 이때, 제2 절연층(460)은 기판(410)의 가장자리에 위치한 제1 도전형 반도체층(421)을 노출시킬 수 있다.The second insulating layer 460 is formed to cover the first pad metal layer 451 and the second pad metal layer 452. The second insulating layer 460 may cover the first conductive semiconductor layer 421 exposed along the periphery of the mesa M. [ At this time, the second insulating layer 460 may expose the first conductive type semiconductor layer 421 located at the edge of the substrate 410.
제2 절연층(460)은 제1 패드 금속층(451)을 노출시키는 제1 개구부(461) 및 제2 패드 금속층(452)을 노출시키는 제2 개구부(462)를 포함한다. 제1 개구부(461) 및 제2 개구부(462)는 메사(M) 하부 영역에 배치될 수 있다. The second insulating layer 460 includes a first opening 461 for exposing the first pad metal layer 451 and a second opening 462 for exposing the second pad metal layer 452. The first opening 461 and the second opening 462 may be disposed in the lower region of the mesa M. [
도 7을 참고하면, 제2 절연층(460)의 제1 개구부(461) 및 제2 개구부(462)는 서로 이격되며, 기판(410)의 긴 변을 따라 길게 형성된다. 또한, 제1 개구부(461) 및 제2 개구부(462) 중 적어도 하나는 중심선(C)를 가로지르도록 형성될 수 있다. 여기서, 중심선(C)은 발광 다이오드 칩(400) 또는 기판(410)의 하면의 짧은 변과 평행하며, 하면의 중심을 지나가는 선이다. 즉, 중심선(C)은 발광 다이오드 칩의 양 짧은 변 사이의 중심에서 긴 변으로 이어지는 선이다. 도 7에서는 제1 개구부(461) 및 제2 개구부(462)가 모두 중심선(C)을 가로지르도록 형성된다.Referring to FIG. 7, the first opening 461 and the second opening 462 of the second insulating layer 460 are spaced apart from each other, and are formed long along the long side of the substrate 410. At least one of the first opening 461 and the second opening 462 may be formed to cross the center line C. [ Here, the center line C is a line passing through the center of the lower surface, parallel to the shorter sides of the lower surface of the light emitting diode chip 400 or the substrate 410. That is, the center line C is a line extending from the center to the long side of both the short sides of the light emitting diode chip. 7, both the first opening 461 and the second opening 462 are formed to cross the center line C. [
제2 절연층(460)은 SiO2 또는 Si3N4의 단일층으로 형성될 수 있으나 이에 한정되는 것은 아니다. 예를 들어, 제2 절연층(460)은 실리콘 질화막과 실리콘 산화막을 포함하는 다층 구조를 가질 수도 있으며, 실리콘 산화막과 타이타늄 산화막을 교대로 적층한 분포브래그 반사기를 포함할 수도 있다.The second insulating layer 460 may be formed of a single layer of SiO 2 or Si 3 N 4, but is not limited thereto. For example, the second insulating layer 460 may have a multilayer structure including a silicon nitride film and a silicon oxide film, and may include a distributed Bragg reflector in which a silicon oxide film and a titanium oxide film are alternately laminated.
제1 범프 패드(470) 및 제2 범프 패드(480)은 각각 제1 패드 금속층(451) 및 제2 패드 금속층(452) 상에 형성되며, 제2 절연층(460)보다 하부 방향으로 돌출되도록 형성된다. The first bump pad 470 and the second bump pad 480 are formed on the first pad metal layer 451 and the second pad metal layer 452 respectively and are formed to protrude downward from the second insulating layer 460 .
제1 범프 패드(470)는 제2 절연층(460)의 제1 개구부(461)에 의해 노출된 제1 패드 금속층(451) 하부에 형성된다. 이와 같이 형성된 제1 범프 패드(470)는 제1 패드 금속층(451)을 통해 제1 도전형 반도체층(421)과 전기적으로 연결된다.The first bump pad 470 is formed under the first pad metal layer 451 exposed by the first opening 461 of the second insulating layer 460. The first bump pad 470 thus formed is electrically connected to the first conductive type semiconductor layer 421 through the first pad metal layer 451.
제2 범프 패드(480)는 제2 절연층(460)의 제2 개구부(462)에 의해 노출된 제2 패드 금속층(452) 하부에 형성된다. 이와 같이 형성된 제2 범프 패드(480)는 제2 패드 금속층(452) 및 오믹 반사층(430)을 통해 제2 도전형 반도체층(423)과 전기적으로 연결된다. 제2 패드 금속층(452)는 생략될 수 있다. 이때, 제2 범프 패드(480)는 오믹 반사층(430)에 직접 접촉할 수 있다.The second bump pad 480 is formed below the second pad metal layer 452 exposed by the second opening 462 of the second insulating layer 460. The second bump pad 480 thus formed is electrically connected to the second conductive semiconductor layer 423 through the second pad metal layer 452 and the ohmic reflective layer 430. The second pad metal layer 452 may be omitted. At this time, the second bump pad 480 may directly contact the ohmic reflective layer 430.
도 8에 도시된 바와 같이, 제1 범프 패드(470) 및 제2 범프 패드(480)의 하부는 제2 절연층(460)의 하면의 일부분을 덮도록 상부보다 넓은 폭을 갖도록 형성될 수 있다. 이와 같이 형성된 제1 범프 패드(470)와 제2 범프 패드(480)는 하부가 제2 절연층(460)의 하면을 덮도록 형성함으로써, 외부 구성과 접착되는 큰 접착 면적을 가질 수 있다. 따라서, 발광 다이오드 칩(400)과 외부 구성 간의 신뢰성 있는 연결이 가능하다.8, the lower portions of the first bump pad 470 and the second bump pad 480 may be formed to have a greater width than the upper portion to cover a portion of the lower surface of the second insulating layer 460 . The first bump pad 470 and the second bump pad 480 thus formed are formed to cover the lower surface of the second insulating layer 460 so that the first bump pad 470 and the second bump pad 480 can have a large adhesion area adhered to the external structure. Therefore, a reliable connection between the light emitting diode chip 400 and the external configuration is possible.
본 실시 예에서는 발광 다이오드 칩(400)이 제2 절연층(460)의 하면을 덮는 제1 범프 패드(470)와 제2 범프 패드(480)를 포함하는 구조로 설명하였다. 그러나 발광 다이오드 칩(400)의 구조는 이에 한정되는 것은 아니다. 예를 들어, 제1 범프 패드(470) 및 제2 범프 패드(480)는 의 제1 개구부(461) 및 제2 개구부(462)에 의해 노출된 제1 패드 금속층(451) 상에 한정되어 위치할 수 있다. 제1 범프 패드(470) 및 제2 범프 패드(480)는 제2 절연층(460)의 제1 개구부(461) 및 제2 개구부(462)를 따라 형성된다. 따라서, 제1 범프 패드(470)는 발광 다이오드 칩(400)의 일 긴 변을 따라 길게 배치된다. 또한, 제2 범프 패드(480)는 발광 다이오드 칩(400)의 타 긴 변을 따라 길게 배치된다. 즉, 제1 범프 패드(470) 및 제2 범프 패드(480)는 횡방향으로 서로 이격되어 발광 다이오드 칩(400)의 양 긴 변을 따라 길게 배치된다. 도 7을 참고하면, 제1 범프 패드(470) 및 제2 범프 패드(480)는 모두 중심선(C)을 가로지를 정도의 길이를 갖는다. In the present embodiment, the light emitting diode chip 400 includes the first bump pad 470 and the second bump pad 480 covering the lower surface of the second insulating layer 460. However, the structure of the light emitting diode chip 400 is not limited thereto. For example, the first bump pad 470 and the second bump pad 480 are defined on the first pad metal layer 451 exposed by the first opening 461 and the second opening 462, can do. The first bump pad 470 and the second bump pad 480 are formed along the first opening 461 and the second opening 462 of the second insulating layer 460. Accordingly, the first bump pad 470 is disposed along one long side of the light emitting diode chip 400. In addition, the second bump pads 480 are arranged long along the other long sides of the light emitting diode chip 400. That is, the first bump pads 470 and the second bump pads 480 are spaced apart from each other in the transverse direction and arranged long along both long sides of the LED chip 400. Referring to FIG. 7, both the first bump pad 470 and the second bump pad 480 have a length that crosses the center line C.
제1 범프 패드(470) 및 제2 범프 패드(480)는 전도성 물질로 형성된다. 예를 들어, 제1 범프 패드(470) 및 제2 범프 패드(480)는 Au 또는 TiN으로 이루어진 단일 금속층으로 형성되거나, Au층과 TiN층이 적층된 다층 금속층일 수 있다. 이는 일 실시 예일 뿐, 제1 범프 패드(470) 및 제2 범프 패드(480)의 재질이 이에 한정되는 것은 아니며, 전도성 금속 중 어느 것으로도 형성될 수 있다.The first bump pad 470 and the second bump pad 480 are formed of a conductive material. For example, the first bump pad 470 and the second bump pad 480 may be formed of a single metal layer made of Au or TiN, or a multilayered metal layer in which an Au layer and a TiN layer are laminated. The material of the first bump pad 470 and the second bump pad 480 is not limited thereto, and may be formed of any of the conductive metals.
종래에는 직사각형 테두리를 갖는 발광 다이오드 칩은 두 개의 범프 패드가 각각 중심선의 양쪽에 각각 형성된다. 이와 같이 형성된 발광 다이오드 칩은 중심보다 양쪽에 금속 밀도가 더 높다. 따라서, 기다란 형상의 발광 다이오드 칩은 중심선을 기준으로 잘 휘어지거나 부러지는 문제점이 발생한다.Conventionally, in a light emitting diode chip having a rectangular rim, two bump pads are formed on both sides of the center line, respectively. The light emitting diode chip thus formed has metal densities higher on both sides than the center. Therefore, a problem arises that the light emitting diode chip having a long shape is bent or broken with respect to the center line.
그러나, 본 실시 예에 따른 발광 다이오드 칩(400)은 제1 범프 패드(470)와 제2 범프 패드(480)가 중심선을 가로지르도록 형성되므로, 중심선을 기준으로 휘어지거나 부러지는 문제를 방지할 수 있다.However, since the first bump pad 470 and the second bump pad 480 are formed so as to cross the center line, the light emitting diode chip 400 according to the present embodiment can prevent a problem of bending or breaking on the basis of the center line .
본 실시 예에서, 제1 범프 패드(470)와 제2 범프 패드(480)가 모두 중심선(C)을 가로지르도록 형성되지만, 제1 범프 패드(470)와 제2 범프 패드(480)의 구조는 패키지 기판(200)의 제1 실장부(111) 및 제2 실장부(121)의 구조에 따라 변경될 수 있다.In this embodiment, both the first bump pad 470 and the second bump pad 480 are formed to cross the center line C, but the structure of the first bump pad 470 and the second bump pad 480 May be changed according to the structure of the first mounting portion 111 and the second mounting portion 121 of the package substrate 200. [
발광 다이오드 칩(400)의 범프 패드와 패키지 기판(200)의 제1 실장부(111) 및 제2 실장부(121) 사이에 전도성 접착제를 개재하여, 발광 다이오드 칩(400)을 패키지 기판(200)에 고정시킬 수 있다. 예를 들어, 발광 다이오드 칩(400)은 길게 형성된 제1 범프 패드(470) 및 제2 범프 패드(480)가 패키지 기판(200)에서 길게 형성된 제1 실장부(111) 및 제2 실장부(121)에 대응하도록 패키지 기판(200)에 실장된 후 접착될 수 있다. 밀봉 부재(310)는 패키지 기판(200)의 캐비티(131)에 채워져 발광 다이오드 칩(400)을 덮는다. 밀봉 부재(310)는 캐비티(131)를 밀봉하여 외부로부터 수분, 먼지 등이 발광 다이오드 패키지(300)의 내부로 침투하는 것을 방지한다. 밀봉 부재(310)는 에폭시 수지 또는 실리콘 수지로 형성될 수 있다. 또한, 밀봉 부재(310)에는 필요에 따라 발광 다이오드 칩(400)의 광의 파장을 변환시킬 수 있는 형광체 또는 확산제를 더 포함할 수 있다.The light emitting diode chip 400 is electrically connected to the package substrate 200 through the conductive adhesive agent between the bump pads of the light emitting diode chip 400 and the first and second mounting portions 111 and 121 of the package substrate 200 ). For example, the light emitting diode chip 400 may include a first mounting portion 111 and a second mounting portion formed by a long bump pad 470 and a second bump pad 480 formed on the package substrate 200, 121 to the package substrate 200 and then adhered thereto. The sealing member 310 is filled in the cavity 131 of the package substrate 200 to cover the light emitting diode chip 400. The sealing member 310 seals the cavity 131 to prevent moisture, dust, etc. from penetrating into the inside of the LED package 300 from the outside. The sealing member 310 may be formed of an epoxy resin or a silicone resin. In addition, the sealing member 310 may further include a phosphor or a diffusing agent capable of changing the wavelength of light of the light emitting diode chip 400, if necessary.
본 실시 예에 따른 발광 다이오드 패키지(300)는 긴 구조로 형성되지만, 제1 리드 프레임(210) 및 제2 리드 프레임(220)이 중심선(C)을 가로지르도록 형성되므로, 중심부의 강도가 향상된다. 따라서, 발광 다이오드 패키지(300)가 긴 구조로 형성되어도 휘어지거나 부러지는 것을 방지하여, 발광 다이오드 패키지(300) 및 발광 다이오드 패키지(300)가 장착된 제품의 신뢰성을 향상시킬 수 있다.Since the first lead frame 210 and the second lead frame 220 are formed so as to cross the center line C, the light emitting diode package 300 according to the present embodiment is improved in strength do. Therefore, even if the light emitting diode package 300 is formed in a long structure, it can be prevented from being bent or broken, thereby improving the reliability of the product on which the light emitting diode package 300 and the light emitting diode package 300 are mounted.
도 9 및 도 10은 본 발명의 다른 실시 예에 따른 발광 다이오드 패키지를 나타낸 예시도이다.9 and 10 are views showing an LED package according to another embodiment of the present invention.
도 9는 다른 실시 예에 따른 발광 다이오드 패키지의 단면도이다. 또한, 도 10은 다른 실시 예에 따른 발광 다이오드 패키지의 상부 평면도이다.9 is a cross-sectional view of a light emitting diode package according to another embodiment. 10 is a top plan view of a light emitting diode package according to another embodiment.
도 9 및 도 10을 참고하면 다른 실시 예에 따른 발광 다이오드 패키지(500)는 패키지 기판(200), 발광 다이오드 칩(400), 제너 다이오드 칩(520) 및 밀봉 부재(310)를 포함한다.9 and 10, the light emitting diode package 500 according to another embodiment includes a package substrate 200, a light emitting diode chip 400, a zener diode chip 520, and a sealing member 310.
패키지 기판(530)은 제1 실시 예의 패키지 기판(도 1 내지 도 3의 100)에 제1 제너 연결부(511) 및 제2 제너 연결부(512)가 더 형성된 구조이다. 또는 패키지 기판(530)은 제2 실시 예의 패키지 기판(도 4 및 도 5의 200)에 제1 제너 연결부(511) 및 제2 제너 연결부(512)가 더 형성된 구조일 수 있다.The package substrate 530 has a structure in which a first zener connecting portion 511 and a second zener connecting portion 512 are further formed on the package substrate 100 of Figs. 1 to 3 of the first embodiment. Alternatively, the package substrate 530 may have a structure in which a first zener connecting portion 511 and a second zener connecting portion 512 are further formed on the package substrate (200 in Figs. 4 and 5) of the second embodiment.
제1 제너 연결부(511)는 제1 리드 프레임(540)의 상면에 형성된다. 제1 제너 연결부(511)는 제1 리드 프레임(540)의 제1 홈부(112)와 몸체부(130)의 캐비티(131) 사이에 위치한다.The first zener connecting portion 511 is formed on the upper surface of the first lead frame 540. The first zener connecting portion 511 is located between the first groove 112 of the first lead frame 540 and the cavity 131 of the body portion 130.
제2 제너 연결부(512)는 제2 리드 프레임(550)의 상면에 형성된다. 제2 제너 연결부(512)는 제2 리드 프레임(550)의 제2 실장부(121)에서 제1 단자부(113)가 형성된 방향의 일단과 몸체부(130)의 캐비티(131) 사이에 위치한다. The second zener connecting portion 512 is formed on the upper surface of the second lead frame 550. The second jener coupling part 512 is positioned between one end of the second mounting part 121 of the second lead frame 550 in the direction in which the first terminal part 113 is formed and the cavity 131 of the body part 130 .
따라서, 제1 제너 연결부(511)와 제2 제너 연결부(512)는 서로 횡방향으로 이격되도록 형성된다.Accordingly, the first zener connecting portion 511 and the second zener connecting portion 512 are formed to be laterally spaced from each other.
이와 같이 형성된 제1 제너 연결부(511) 및 제2 제너 연결부(512)에 제너 다이오드 칩(520)이 실장되고, 제1 제너 연결부(511) 및 제2 제너 연결부(512)는 제너 다이오드 칩(520)과 전기적으로 연결된다., 이때, 제너 다이오드 칩(520)은 발광 다이오드 칩(400)과 병렬 연결된다.The Zener diode chip 520 is mounted on the first and second Zener connection portions 511 and 512 formed as described above and the first and second Zener connection portions 511 and 512 are connected to the Zener diode chip 520 At this time, the Zener diode chip 520 is connected in parallel to the LED chip 400.
본 발명의 실시 예에 따른 발광 다이오드 패키지(500)는 내부에 발광 다이오드 칩(400)뿐만 아니라 제너 다이오드 칩(520)을 실장하여, 발광 다이오드 칩(400)과 제너 다이오드 칩(520)이 동일한 리드 프레임에 의해 전기적으로 연결된다. 따라서, 발광 다이오드 칩(400)과 제너 다이오드 칩(520)이 개별적으로 패키징된 후 별도의 회로 기판을 통해서 연결될 때보다 외부 환경에 의해서 단락되는 것을 방지할 수 있다. 또한, 본 발명의 실시 예에 따른 발광 다이오드 패키지(500)는 발광 다이오드 칩(400)과 제너 다이오드 칩(520)이 개별적으로 패키징될 때보다 면적 소모가 작아, 광량 증가 또는 제품의 소형화가 가능하다.The light emitting diode package 500 according to the embodiment of the present invention may include a light emitting diode chip 400 as well as a zener diode chip 520 mounted therein so that the light emitting diode chip 400 and the zener diode chip 520 are connected to the same lead And are electrically connected by a frame. Therefore, it is possible to prevent the LED chip 400 and the Zener diode chip 520 from being short-circuited by the external environment when they are separately packaged and then connected through a separate circuit board. The light emitting diode package 500 according to the embodiment of the present invention is smaller in area consumption than when the light emitting diode chip 400 and the zener diode chip 520 are individually packaged, .
도 11은 본 발명의 실시 예에 따른 발광 모듈을 나타낸 예시도이다.11 is an exemplary view illustrating a light emitting module according to an embodiment of the present invention.
도 11을 참고하면, 실시 예에 따른 발광 모듈(10)은 회로 기판(11) 및 발광 다이오드 패키지(300)를 포함한다. 여기서 발광 다이오드 패키지(300)는 도 6에서 설명한 일 실시 예에 따른 발광 다이오드 패키지이다. 발광 다이오드 패키지(300)에 대한 자세한 설명은 도 6을 참고하도록 한다.Referring to FIG. 11, the light emitting module 10 according to the embodiment includes a circuit board 11 and a light emitting diode package 300. Here, the light emitting diode package 300 is a light emitting diode package according to the embodiment illustrated in FIG. The light emitting diode package 300 is described in detail with reference to FIG.
회로 기판(11)에는 발광 다이오드 패키지(300)가 실장된다. 또한, 회로 기판(11)에는 실장된 발광 다이오드 패키지(300)와 전기적으로 연결되는 배선이 형성된다. 예를 들어, 회로 기판(11)은 절연층에 배선이 형성된 인쇄회로기판 또는 연성 인쇄회로기판일 수 있다. 또는 회로 기판(11)은 금속층 표면에 형성된 절연층에 배선이 형성된 금속 기판일 수 있다. 또는 회로 기판(11)은 레진, 글래스 에폭시 등의 합성 수지 기판이거나 세라믹 기판일 수 있다. 또는 회로 기판(11)은 EMC(Epoxy Mold Compound), PI(polyimide), 세라믹, 그래핀, 유리합성섬유 및 이들의 조합들 중 어느 하나 이상을 선택하여 이루어지는 것일 수 있다.The light emitting diode package 300 is mounted on the circuit board 11. [ In addition, a wiring electrically connected to the mounted light emitting diode package 300 is formed on the circuit board 11. For example, the circuit board 11 may be a printed circuit board or a flexible printed circuit board having wiring on the insulating layer. Or the circuit board 11 may be a metal substrate on which wiring is formed in an insulating layer formed on the surface of the metal layer. Alternatively, the circuit board 11 may be a synthetic resin substrate such as resin or glass epoxy, or a ceramic substrate. Or the circuit board 11 may be formed by selecting one or more of EMC (Epoxy Mold Compound), PI (polyimide), ceramic, graphene, glass synthetic fiber and combinations thereof.
회로 기판(11)은 제1 영역(12) 및 제2 영역(13)으로 구분된다. The circuit board 11 is divided into a first region 12 and a second region 13. [
제1 영역(12)에는 발광 다이오드 패키지(300)가 실장된다. 발광 다이오드 패키지(300)는 제1 영역(12)에 실장됨으로써 회로 기판(11)의 배선과 전기적으로 연결된다. 제1 영역(12)은 발광 다이오드 패키지(300)에서 방출되는 광이 입사되는 도광판(20)의 측면과 마주보도록 배치된다.In the first region 12, the light emitting diode package 300 is mounted. The light emitting diode package 300 is electrically connected to the wiring of the circuit board 11 by being mounted on the first region 12. The first region 12 is disposed to face a side surface of the light guide plate 20 through which light emitted from the light emitting diode package 300 is incident.
제2 영역(13)은 제1 영역(12)에 수직하게 접혀있다. 즉, 제2 영역(13)은 제1 영역(12)에서 도광판(20)을 향해 돌출되도록 형성된다.The second region 13 is folded perpendicularly to the first region 12. That is, the second region 13 is formed to protrude from the first region 12 toward the light guide plate 20.
회로 기판(11)의 제1 영역(12)에는 복수의 발광 다이오드 패키지(300)가 배치된다. 복수의 발광 다이오드 패키지(300)는 제1 영역(12)의 길이 방향으로 나란히 배치된다.A plurality of light emitting diode packages (300) are disposed in the first region (12) of the circuit board (11). The plurality of light emitting diode packages 300 are arranged side by side in the longitudinal direction of the first region 12.
발광 다이오드 패키지(300)는 패키지 기판(미도시) 및 패키지 기판에 실장된 발광 다이오드 칩(미도시)을 포함한다. 본 발명의 실시 예에 따른 발광 다이오드 패키지(300)는 일 방향으로 길게 형성된 구조이다. 발광 다이오드 패키지(300)의 의 양 측면에는 단자부가 배치되되, 한 측면에는 한 극성의 단자부만 위치한다. 또한, 발광 다이오드 패키지(300)의 하면에는 단자부와 연결되며, 일부분이 길게 형성된 접속부가 배치된다. 즉, 발광 다이오드 패키지(300)의 접속부는 단자부와 연결된 일부분과 이 일부분에서 길게 형성된 부분을 포함하는 넓은 면적으로 이루어진다. 따라서, 발광 다이오드 패키지(300)는 회로 기판(11)과 넓은 면적을 통해서 접속되므로, 회로 기판(11)과의 신뢰성 있는 전기적 연결이 가능하다.The light emitting diode package 300 includes a package substrate (not shown) and a light emitting diode chip (not shown) mounted on the package substrate. The light emitting diode package 300 according to the embodiment of the present invention has a long structure in one direction. Terminal portions are disposed on both sides of the light emitting diode package 300, and only one polarity terminal portion is located on one side. A light emitting diode package 300 is connected to a terminal portion on a lower surface thereof, and a connection portion having a long portion is disposed. That is, the connection portion of the light emitting diode package 300 has a large area including a portion connected to the terminal portion and a long portion formed at the portion. Therefore, since the light emitting diode package 300 is connected to the circuit board 11 through a large area, reliable electrical connection with the circuit board 11 is possible.
본 실시 예의 발광 다이오드 패키지(300)는 하면에 접속부가 노출되며, 상면을 통해서 광이 방출된다. 즉, 발광 다이오드 패키지(300)는 하면이 접착면이며, 상면은 발광면이다. 회로 기판(11)은 제1 영역(12)과 제2 영역(13)이 수직한 구조를 갖는다. 회로 기판(11)의 이와 같은 구조에 의해서 본 실시 예의 발광 다이오드 패키지(300)를 회로 기판(11)의 제1 영역(12)에 접착시켰을 때, 발광 다이오드 패키지(300)의 발광면이 도광판(20)의 입사면인 일 측면을 마주하게 배치할 수 있다. 따라서, 발광 다이오드 패키지(300)의 발광면에서 방출된 광은 도광판(20)의 입사면을 통해 도광판(20) 내부로 입사된다.In the light emitting diode package 300 of this embodiment, the connection portion is exposed on the lower surface, and light is emitted through the upper surface. That is, the lower surface of the light emitting diode package 300 is an adhesive surface, and the upper surface is a light emitting surface. The circuit board 11 has a structure in which the first region 12 and the second region 13 are perpendicular to each other. When the light emitting diode package 300 of this embodiment is adhered to the first region 12 of the circuit board 11 by such a structure of the circuit board 11, 20 facing each other. Therefore, the light emitted from the light emitting surface of the light emitting diode package 300 is incident into the light pipe 20 through the incident surface of the light pipe 20.
본 발명의 발광 모듈(10)은 상기와 같은 발광 다이오드 패키지(300) 및 회로 기판(11)에 의해서 사이드뷰를 구현을 위해 리드 프레임을 발광 다이오드 패키지의 측면에 위치하도록 구부리는 등의 성형을 할 필요가 없다. The light emitting module 10 of the present invention is formed by bending the lead frame so as to be positioned on the side of the light emitting diode package for the sake of side view by the light emitting diode package 300 and the circuit board 11 no need.
또한, 도면에 도시된 바와 같이, 제1 단자부(113) 및 제2 단자부(123)는 발광 다이오드 패키지(300)의 양 측면에서 돌출되도록 형성된다. 제1 단자부(113)는 발광 다이오드 패키지(300)의 일 측면을 따라 돌출되도록 형성된다. 또한, 제2 단자부(123)는 발광 다이오드 패키지(300)의 타 측면을 따라 돌출되도록 형성된다.In addition, as shown in the figure, the first terminal portion 113 and the second terminal portion 123 are formed to protrude from both sides of the LED package 300. The first terminal portion 113 is formed to protrude along one side of the LED package 300. The second terminal portion 123 is formed to protrude along the other side of the LED package 300.
복수의 발광 다이오드 패키지(300)에서 방출된 광 중에서 일부는 도광판(20)에 의해서 반사되어 회로 기판(11)을 향한다. 만약, 도광판(20)에서 반사된 광이 복수의 발광 다이오드 패키지 사이를 통과하여 회로 기판(11)에 흡수되면, 도광판의 출사면에 암점이 발생한다. 그러나 본 실시 예의 발광 모듈(10)은 발광 다이오드 패키지(300)의 양 측면에서 돌출된 제1 단자부(113) 및 제2 단자부(123)에 의해서 회로 기판(11)을 향하는 광이 반사되어 다시 도광판(20)에 입사될 수 있다. 따라서, 발광 모듈(10)은 복수의 발광 다이오드 패키지(300) 사이를 향하는 광이 회로 기판(11)에 흡수되지 않도록 반사시키므로, 복수의 발광 다이오드 패키지(300) 사이에 의해서 도광판에 암점이 발생하는 것을 방지할 수 있다.A part of the light emitted from the plurality of light emitting diode packages 300 is reflected by the light guide plate 20 and directed to the circuit board 11. [ If the light reflected by the light guide plate 20 passes between the plurality of light emitting diode packages and is absorbed by the circuit board 11, a dark spot appears on the light emitting surface of the light guide plate. However, in the light emitting module 10 of the present embodiment, light directed toward the circuit board 11 is reflected by the first terminal portion 113 and the second terminal portion 123 protruding from both sides of the LED package 300, (20). Accordingly, the light emitting module 10 reflects light directed between the plurality of light emitting diode packages 300 so as not to be absorbed by the circuit board 11, so that a dark spot is generated in the light pipe by the plurality of light emitting diode packages 300 Can be prevented.
도 12 내지 도 21은 본 발명의 제3 실시 예에 따른 패키지 기판을 나타낸 예시도이다. 또한, 도 22 내지 도 24는 본 발명의 또 다른 실시 예에 따른 발광 다이오드 패키지를 나타낸 예시도이다. 여기서, 도 22 내지 도 24의 발광 다이오드 패키지는 제3 실시 예에 따른 패키지 기판이 적용된 발광 다이오드 패키지이다.12 to 21 are illustrations showing a package substrate according to a third embodiment of the present invention. 22 to 24 are views illustrating an LED package according to another embodiment of the present invention. Here, the light emitting diode package of FIGS. 22 to 24 is a light emitting diode package to which the package substrate according to the third embodiment is applied.
도 12 내지 도 14는 제3 실시 예에 따른 패키지 기판의 리드 프레임의 예시도이다. 도 15는 제3 실시 예에 따른 패키지 기판의 평면도이다. 도 16은 제3 실시 예에 따른 패키지 기판의 저면도이다. 도 17은 제2 실시 예에 따른 패키지 기판의 측면도이다. 또한, 도 18 내지 도 21은 제3 실시 예에 따른 패키지 기판의 단면도이다.12 to 14 are illustrations of a lead frame of a package substrate according to the third embodiment. 15 is a plan view of the package substrate according to the third embodiment. 16 is a bottom view of the package substrate according to the third embodiment. 17 is a side view of the package substrate according to the second embodiment. 18 to 21 are sectional views of the package substrate according to the third embodiment.
제3 실시 예에 따른 패키지 기판(600)에 대한 설명은 이전 실시 예의 패키지 기판과 동일한 구성부에 대한 설명은 생략하거나 간단하게 설명하고, 차이점 위주로 설명하도록 한다.The description of the package substrate 600 according to the third embodiment will be omitted or briefly explained, and the differences will be mainly described.
제3 실시 예에 따른 패키지 기판(600)은 제1 리드 프레임(610), 제2 리드 프레임(620) 및 몸체부(630)를 포함한다.The package substrate 600 according to the third embodiment includes a first lead frame 610, a second lead frame 620, and a body portion 630.
몸체부(630)의 하부는 제1 리드 프레임(610) 및 제2 리드 프레임(620)을 둘러싸며, 몸체부(630)의 상부에는 캐비티(631)가 형성되어 있다. 제1 리드 프레임(610) 및 제2 리드 프레임(620)은 몸체부(630) 내에서 서로 횡 방향으로 이격되도록 배치되며, 몸체부(630)에 의해서 서로 절연된다. 도 12 내지 도 14에 도시된 바와 같이, 제1 리드 프레임(610)은 제1 실장부(611), 제1 홈부(612), 제1 제너 연결부(661), 제1 단자부(613), 제1 접속부(614) 및 제1 돌출부(619)를 포함한다. 또한, 제2 리드 프레임(620)은 제2 실장부(621), 제2 홈부(622), 제2 제너 연결부(662), 제2 단자부(623), 제2 접속부(624) 및 제2 돌출부(629)를 포함한다.A lower portion of the body portion 630 surrounds the first lead frame 610 and the second lead frame 620 and a cavity 631 is formed on the upper portion of the body portion 630. The first lead frame 610 and the second lead frame 620 are disposed to be laterally spaced from each other in the body portion 630 and are insulated from each other by the body portion 630. 12 to 14, the first lead frame 610 includes a first mounting portion 611, a first groove portion 612, a first zener connecting portion 661, a first terminal portion 613, 1 connection 614 and a first projection 619. The second lead frame 620 includes a second mounting portion 621, a second groove portion 622, a second zener connecting portion 662, a second terminal portion 623, a second connecting portion 624, (629).
도 12는 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 상부와 하부의 외부 모양을 도시한 것이다. 12 shows the outer shapes of the upper and lower portions of the first lead frame 610 and the second lead frame 620. As shown in Fig.
도 12에서 실선은 상부에서 보이는 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 외부 모양을 나타낸 것이다. 즉, 도 12의 실선은 도 13에 도시된 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 평면도에 해당된다. 또한, 도 12에서 점선은 상부에 가려져 보이지 않는 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 하부의 외부 모양을 나타낸 것이다. 즉, 도 12의 점선 및 점선과 이어지는 실선은 도 14에 도시된 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 배면도에 해당된다.12, solid lines indicate the outer shapes of the first lead frame 610 and the second lead frame 620 seen from above. That is, the solid line in FIG. 12 corresponds to the plan view of the first lead frame 610 and the second lead frame 620 shown in FIG. 12, the dotted lines indicate the outer shapes of the lower portions of the first lead frame 610 and the second lead frame 620 that are invisible at the upper portion. That is, the solid line connecting with the dotted line and the dotted line in FIG. 12 corresponds to the rear view of the first lead frame 610 and the second lead frame 620 shown in FIG.
도 13을 참고하면, 제1 리드 프레임(610) 및 제2 리드 프레임(620)에서 음영 패턴 처리된 부분은 상면에서 하프 에칭된 부분이다. Referring to FIG. 13, the shadow patterned portions of the first lead frame 610 and the second lead frame 620 are half-etched on the upper surface.
제1 리드 프레임(610)의 상면에서 하프 에칭된 부분은 제1 홈부(612)에 해당된다. 도 13에 도시된 바와 같이 제1 홈부(612)는 제1 실장부(611)의 주변에 형성된다.The half-etched portion of the upper surface of the first lead frame 610 corresponds to the first trench 612. As shown in FIG. 13, the first trench 612 is formed around the first mounting portion 611.
또한, 제2 리드 프레임(620)의 상면에서 하프 에칭된 부분은 제2 홈부(622)에 해당된다. 도 14에 도시된 바와 같이, 제2 홈부(622)는 제2 실장부(621)의 주변에 형성된다. 도 14를 참고하면, 제1 리드 프레임(610) 및 제2 리드 프레임(620)에서 음영 패턴 처리된 부분은 하면에서 하프 에칭된 부분이다.In addition, the half-etched portion of the upper surface of the second lead frame 620 corresponds to the second trench 622. As shown in Fig. 14, the second trench 622 is formed around the second mounting portion 621. As shown in Fig. Referring to FIG. 14, the shadow patterned portions in the first lead frame 610 and the second lead frame 620 are half-etched portions at the bottom.
제1 리드 프레임(610)의 하부는 제2 리드 프레임(620)의 제2-2 접속부(626)를 마주하는 부분과 제1 단자부(613)를 제외한 제1-1 접속부(615), 제1-2 접속부(616) 및 제1-3 접속부(618)의 단축 방향에 위치한 외측 테두리를 따라 하프 에칭된다. 이와 같은 하프 에칭에 의해서 복수의 제1 돌출부(619)의 하부의 일부가 노출된다.The lower portion of the first lead frame 610 is connected to the portion of the second lead frame 620 facing the second-second connecting portion 626 and the first connecting portion 615 excluding the first terminal portion 613, -2 connection portion 616 and the first-third connection portion 618 in the short axis direction. A part of the lower portion of the plurality of first protrusions 619 is exposed by this half-etching.
또한, 제1 리드 프레임(610)의 하부는 서로 분리된 하면인 제1-2 접속부(616)와 제1-3 접속부(618) 사이의 일부가 하프 에칭된다. In addition, the lower part of the first lead frame 610 is partially half-etched between the first and second connection portions 616 and 618, which are separated from each other.
제1-2 접속부(616)와 제1-3 접속부(618) 사이의 일 측에서 하프 에칭된 부분은 제1 실장부(611)의 하부의 일부이다. 이 부분의 단면을 살펴보면, 도 18에 도시된 바와 같이, 제1 리드 프레임(610)은 제1 실장부(611)의 하부의 일부가 하프 에칭되어 제3 홈부(650)부가 형성된 구조가 된다. 제3 홈부(650)는 몸체부(630)가 채워져, 제1 리드 프레임(610)과 몸체부(630) 간의 접착력을 향상시킬 수 있다.The half-etched portion at one side between the first-second connecting portion 616 and the first-third connecting portion 618 is a part of the lower portion of the first mounting portion 611. As shown in FIG. 18, the first lead frame 610 has a structure in which a portion of the lower portion of the first mounting portion 611 is half-etched to form the third groove portion 650. The third trench 650 may be filled with the body portion 630 to improve the adhesion between the first lead frame 610 and the body portion 630.
또한, 제1-2 접속부(616)와 제1-3 접속부(618) 사이의 타 측에서 하프 에칭된 부분은 복수의 제1 돌출부(619) 중 하나의 하부의 일부에 해당된다. 여기서, 일 측은 제2 리드 프레임(620)과 마주하는 측부이며, 타 측은 일측의 반대 방향의 측부이다.The half-etched portion at the other side between the first-second connecting portion 616 and the first-third connecting portion 618 corresponds to a portion of the lower portion of one of the plurality of first protruding portions 619. Here, one side is the side facing the second lead frame 620, and the other side is the opposite side of the one side.
따라서, 제1-2 접속부(616)와 제1-3 접속부(618)은 서로 분리되어 있지만, 그 상부는 제1 실장부(611)와 하나의 제1 돌출부(619)에 의해서 서로 연결되어 있다. 이와 같은 구조에 의해서 제1 실장부(611)와 제1 돌출부(619) 사이에서 제1-2 접속부(616)와 제1-3 접속부(618)가 이격되어 있는 이격 공간(640)이 형성된다. 즉, 제1 리드 프레임(610)은 제1 실장부(610)와 제1 돌출부(619) 사이에 관통 구멍이 형성된 구조가 된다.도 20에 도시된 바와 같이, 이격 공간(640)에 몸체부(630)가 채워짐에 따라, 제1 리드 프레임(610) 및 제2 리드 프레임(620)과 몸체부(630) 간의 접착력을 향상시킬 수 있다.The first connecting portion 616 and the first connecting portion 618 are separated from each other but the upper portion is connected to the first mounting portion 611 and the first protruding portion 619 . With such a structure, a spacing space 640 is formed between the first mounting portion 611 and the first protruding portion 619 so that the first-second connecting portion 616 and the first-third connecting portion 618 are spaced apart from each other . That is, the first lead frame 610 has a structure in which a through hole is formed between the first mounting portion 610 and the first projection 619. As shown in FIG. 20, in the spacing space 640, The adhesion between the first lead frame 610 and the second lead frame 620 and the body portion 630 can be improved.
또한, 제1 관통홀(641)은 하부가 하프 에칭되어 상부보다 더 큰 직경을 갖는 구조가 된다.In addition, the first through hole 641 is half-etched in the lower portion, and has a larger diameter than the upper portion.
또한, 제1 버 방지부(645)는 제1 리드 프레임(610)의 단축 방향에 위치한 측면의 모서리가 제1 리드 프레임(610)의 하면에서 하프 에칭되어 형성된다. 두 개의 제1 버 방지부(645) 사이에는 제1 단자부(613)가 위치한다. The first burr prevention portion 645 is formed by half-etching the lower surface of the first lead frame 610 at the side edge of the first lead frame 610 located in the minor axis direction. A first terminal portion 613 is positioned between the two first burr prevention portions 645.
제2 리드 프레임(620)의 하면에서 하프 에칭된 부분은 제2 돌출부(629), 제2 관통홀(642) 및 제2 버 방지부(646)에 해당된다. The half-etched portions of the lower surface of the second lead frame 620 correspond to the second protrusion 629, the second through hole 642, and the second burr prevention portion 646.
제2 리드 프레임(620)의 하부는 제1 리드 프레임(610)을 마주하는 부분과 제2 단자부(623)를 제외한 제2-1 접속부(625) 및 제2-2 접속부(626)의 단축 방향에 위치한 외측 테두리를 따라 하프 에칭된다. 이와 같은 하프 에칭에 의해서 복수의 제2 돌출부(629)의 하부의 일부가 노출된다.The lower portion of the second lead frame 620 is connected to the portion facing the first lead frame 610 and the second-first connecting portion 625 and the second-second connecting portion 626 except for the second terminal portion 623 in the minor axis direction As shown in FIG. By this half-etching, a part of the lower portion of the plurality of second projecting portions 629 is exposed.
또한, 제2 관통홀(642)은 하부가 하프 에칭되어 상부보다 더 큰 직경을 갖는 구조가 된다.In addition, the second through hole 642 is half-etched in the lower portion thereof to have a larger diameter than the upper portion.
또한, 제2 버 방지부(646)는 제2 리드 프레임(620)의 단축 방향에 위치한 측면의 모서리가 제2 리드 프레임(620)의 하면에서 하프 에칭되어 형성된다. 두 개의 제2 버 방지부(646) 사이에는 제2 단자부(623)가 위치한다. The second burr prevention portion 646 is formed by half-etching the lower surface of the second lead frame 620 at the side edge of the second lead frame 620 located in the minor axis direction. A second terminal portion 623 is located between the two second burr prevention portions 646.
제1 버 방지부(645) 및 제2 버 방지부(646)는 서로 연결된 복수의 패키지 기판 또는 발광 다이오드 패키지를 서로 분리하기 위해 다이싱(dicing)이 수행될 때, 절단면의 모서리 부분에서 버(burr)가 발생하는 것을 방지하기 위한 것이다.The first burr prevention portion 645 and the second burr prevention portion 646 are formed in a manner such that when dicing is performed to separate a plurality of package substrates or light emitting diode packages connected to each other, burr < / RTI > occurs.
제1 리드 프레임(610) 및 제2 리드 프레임(620)의 두께(도 18의 d6)는 패키지 기판(600)에 실장되는 발광 다이오드 칩의 폭과 동일한 크기일 수 있다. 여기서, 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 두께는 에칭된 부분이 없는 상면에서 하면까지의 거리이다. 또한, 발광 다이오드 칩의 폭은 발광 다이오드의 장축 방향에 위치한 양 측면 간의 거리이다. 예를 들어, 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 두께(d6)는 250㎛이고, 패키지 기판(600)에 실장되는 발광 다이오드 칩의 폭도 250㎛일 수 있다. The thickness of the first lead frame 610 and the second lead frame 620 (d6 in FIG. 18) may be the same as the width of the LED chip mounted on the package substrate 600. Here, the thicknesses of the first lead frame 610 and the second lead frame 620 are distances from the upper surface to the lower surface without the etched portions. The width of the light emitting diode chip is a distance between both sides of the light emitting diode in the long axis direction. For example, the thickness d6 of the first lead frame 610 and the second lead frame 620 may be 250 占 퐉, and the width of the light emitting diode chip mounted on the package substrate 600 may be 250 占 퐉.
또한, 예를 들어, 패키지 기판(600)의 전체 두께는 700㎛이고, 전체 너비는 7000㎛일 수 있다. 여기서, 패키지 기판(600)의 전체 두께는 제1 리드 프레임(610)의 제1 접속부(614) 및 제2 리드 프레임(620)의 제2 접속부(624)가 노출되는 몸체부(630)의 하면에서 캐비티(631)가 형성된 몸체부(630)의 상면까지의 거리이다. 또한, 패키지 기판(600)의 전체 너비는 제1 리드 프레임(610)의 제1 단자부(613)가 노출된 몸체부(630)일 측면에서 제2 리드 프레임(620)의 제2 단자부(623)이 노출된 몸체부(630)의 타 측면까지의 거리이다. 패키지 기판(600)에 발광 다이오드 칩이 실장되고 캐비티(631)에 밀봉 부재가 채워진 발광 다이오드 패키지(도 22 내지 도 24의 700)의 전체 두께 및 전체 너비 역시 패키지 기판(600)과 동일하다. Also, for example, the total thickness of the package substrate 600 may be 700 占 퐉, and the total width may be 7000 占 퐉. The total thickness of the package substrate 600 is set such that the first connection portion 614 of the first lead frame 610 and the second connection portion 624 of the second lead frame 620 are exposed on the lower surface of the body portion 630, To the upper surface of the body portion 630 where the cavity 631 is formed. The overall width of the package substrate 600 is set such that the first terminal portion 613 of the first lead frame 610 is exposed to the second terminal portion 623 of the second lead frame 620 from a side of the exposed body portion 630, Is the distance to the other side of the exposed body portion 630. The total thickness and overall width of the light emitting diode package (700 of FIGS. 22 to 24) in which the light emitting diode chip is mounted on the package substrate 600 and the sealing member is filled in the cavity 631 are also the same as those of the package substrate 600.
제1 리드 프레임(610)의 상면에는 제1 실장부(611), 제1 홈부(612) 및 제1 제너 연결부(661)가 형성된다. 또한, 제2 리드 프레임(620)의 상면에는 제2 실장부(621), 제2 홈부(622) 및 제2 제너 연결부(662)가 형성된다.A first mounting portion 611, a first groove portion 612, and a first zener connecting portion 661 are formed on an upper surface of the first lead frame 610. A second mounting portion 621, a second groove portion 622, and a second zener connecting portion 662 are formed on the upper surface of the second lead frame 620.
도 15를 참고하면, 제1 실장부(611), 제2 실장부(621), 제1 제너 연결부(661) 및 제2 제너 연결부(662)는 패키지 기판(600)의 캐비티(631)를 통해 외부로 노출된다. 15, the first mounting portion 611, the second mounting portion 621, the first zener connecting portion 661 and the second zener connecting portion 662 are connected to each other through the cavity 631 of the package substrate 600 And is exposed to the outside.
제1 홈부(612)는 제1 실장부(611)의 테두리를 따라 형성되며, 제2 홈부(622)는 제2 실장부(621)의 테두리를 따라 형성된다. 즉, 제1 홈부(612)는 제1 실장부(611)를 둘러싸도록 형성되며, 제2 홈부(622)는 제2 실장부(621)를 둘러싸도록 형성된다. 다시 말해서, 캐비티(631)의 바닥에서 제1 실장부(611)와 제2 실장부(621)의 주변의 몸체부(630)가 노출된 부분의 하부에는 제1 홈부(612) 또는 제2 홈부(622)가 형성되어 있다. 이와 같이 형성된 제1 홈부(612)는 제1 실장부(611)와 제1 제너 연결부(661)가 구분되도록 하며, 제2 홈부(622)는 제2 실장부(621)와 제2 제너 연결부(662)가 구분되도록 한다. The first groove portion 612 is formed along the rim of the first mounting portion 611 and the second groove portion 622 is formed along the rim of the second mounting portion 621. That is, the first groove portion 612 is formed so as to surround the first mounting portion 611, and the second groove portion 622 is formed so as to surround the second mounting portion 621. In other words, a first groove portion 612 or a second groove portion 612 is formed under the exposed portion of the body portion 630 around the first mounting portion 611 and the second mounting portion 621 at the bottom of the cavity 631, (Not shown). The first groove portion 612 and the second groove portion 622 are formed so that the first mounting portion 611 and the first zener connecting portion 661 are separated from each other and the second groove portion 622 is formed between the second mounting portion 621 and the second zener connecting portion 662).
도 22 내지 도 24에 도시된 바와 같이, 제1 실장부(611) 및 제2 실장부(621)에는 발광 다이오드 칩(710)이 실장되고, 제1 실장부(611) 및 제2 실장부(621)와 발광 다이오드 칩(710)이 전기적으로 연결된다. 또한, 제1 제너 연결부(661) 및 제2 제너 연결부(662)는 제너 다이오드 칩(720)과 전기적으로 연결된다. 발광 다이오드 칩(710)의 범프 패드들(711)은 각각 제1 실장부(611) 및 제2 실장부(621) 상에 배치된다. 22 to 24, the light emitting diode chip 710 is mounted on the first mounting portion 611 and the second mounting portion 621, and the first mounting portion 611 and the second mounting portion 611 621 and the light emitting diode chip 710 are electrically connected to each other. The first and second zener connecting portions 661 and 662 are electrically connected to the zener diode chip 720. The bump pads 711 of the light emitting diode chip 710 are disposed on the first mounting portion 611 and the second mounting portion 621, respectively.
제1 실장부(611) 및 제2 실장부(621)의 크기 및 제1 실장부(611)와 제2 실장부(621) 사이의 거리는 발광 다이오드 칩(710)의 범프 패드들(711)의 크기 및 범프 패드들(711) 간의 거리에 대응한다. 즉, 제1 실장부(611) 및 제2 실장부(621) 사이의 간격(d1) 및 크기는 발광 다이오드 칩(710)의 양 범프 패드 간의 간격 및 크기와 실질적으로 동일할 수도 있다. 이 경우, 도 22에 도시된 바와 같이, 발광 다이오드 칩(710)이 패키지 기판(600)에 실장되면, 제1 실장부(611) 및 제2 실장부(621)를 덮어, 제1 실장부(611) 및 제2 실장부(621)가 외부로 노출되지 않 다만, 제1 실장부(611) 및 제2 실장부(621)의 크기가 발광 다이오드 칩(710)의 범프 패드들의 크기로 한정되는 것은 아니다. 제1 실장부(611) 및 제2 실장부(621)는 발광 다이오드 칩(710)과 패키지 기판(600) 간의 접착력 향상을 위해 많은 양의 전도성 접착제(730)가 도포되도록 발광 다이오드 칩(710)의 범프 패드들보다 큰 면적을 갖도록 형성될 수 있다. 이 경우, 발광 다이오드 칩(710)이 패키지 기판(600)에 실장되어도, 제1 실장부(611) 및 제2 실장부(621)가 외부로 노출될 수 있다. The size of the first mounting portion 611 and the second mounting portion 621 and the distance between the first mounting portion 611 and the second mounting portion 621 are different from each other with respect to the bump pads 711 of the light emitting diode chip 710 Size and the distance between the bump pads 711. That is, the distance d1 and the size between the first mounting portion 611 and the second mounting portion 621 may be substantially the same as the distance and the size between both the bump pads of the light emitting diode chip 710. 22, when the light emitting diode chip 710 is mounted on the package substrate 600, the first mounting portion 611 and the second mounting portion 621 are covered with the first mounting portion 611 and the second mounting portion 621. In this case, The first mounting portion 611 and the second mounting portion 621 are not exposed to the outside but the first mounting portion 611 and the second mounting portion 621 are limited to the size of the bump pads of the light emitting diode chip 710 It is not. The first mounting portion 611 and the second mounting portion 621 are formed on the light emitting diode chip 710 so as to apply a large amount of the conductive adhesive agent 730 to improve adhesion between the light emitting diode chip 710 and the package substrate 600. [ The bump pads may be formed to have an area larger than that of the bump pads. In this case, even if the light emitting diode chip 710 is mounted on the package substrate 600, the first mounting portion 611 and the second mounting portion 621 can be exposed to the outside.
예를 들어, 제1 실장부(611) 및 제2 실장부(621) 사이의 간격(d1)은 250㎛이다.For example, the distance d1 between the first mounting portion 611 and the second mounting portion 621 is 250 mu m.
제1 실장부(611)와 몸체부(630)의 일 내벽 간의 거리(d2) 및 제2 실장부(621)와 몸체부(630)의 타 내벽 간의 거리(d3)는 발광 다이오드 패키지의 크기 및 발광 효율을 고려해서 정해진다. 여기서, 몸체부(630)의 내벽은 캐비티(631)를 이루는 내벽으로 상기 일 내벽 및 타 내멱은 몸체부(630)의 단축 방향에 위치한 서로 마주하는 내벽이다.The distance d2 between the first mounting portion 611 and one inner wall of the body portion 630 and the distance d3 between the second mounting portion 621 and the other inner wall of the body portion 630 are determined by the size of the light emitting diode package, Is determined in consideration of the luminous efficiency. The inner wall of the body portion 630 is an inner wall forming the cavity 631, and the inner wall and the inner wall are inner walls facing each other located in the minor axis direction of the body portion 630.
d2 및 d3가 너무 크면, 발광 다이오드 패키지의 크기가 커진다. 또한, d2 및 d3가 너무 작으면, 발광 다이오드 칩(710)과 몸체부(630)의 내벽과의 거리가 너무 짧아진다. 이 경우, 발광 다이오드 칩(710)의 측면에서 방출된 광이 몸체부(630)의 내벽에서 반사되어 발광 다이오드 칩(710)으로 재입사될 수 있다. 따라서, 발광 다이오드 패키지의 발광 효율이 감소하게 된다. 본 실시 예의 패키지 기판(600)에는 범프 패드들(711)이 일 측 방향으로 치우치도록 형성된 발광 다이오드 칩(710)이 실장된다. 따라서, 발광 다이오드 칩(710)과 패키지 기판(600)의 정확한 접속을 위해 제1 실장부(611) 및 제2 실장부(621) 역시 일 측 방향으로 치우치도록 형성된다. 예를 들어, d2는 130㎛이고 d3는 120㎛이다. 그러나 d2 및 d3는 서로 다른 수치를 갖는 것으로 한정되는 것이 아니며, 범프 패드들(711)의 위치에 따라 d2와 d3의 수치가 동일하거나 다를 수 있다. 예를 들어, d2 및 d3는 모두 130㎛ 또는 120㎛이 될 수도 있다.If d2 and d3 are too large, the size of the light emitting diode package becomes large. Also, if d2 and d3 are too small, the distance between the light emitting diode chip 710 and the inner wall of the body portion 630 becomes too short. In this case, the light emitted from the side of the light emitting diode chip 710 may be reflected by the inner wall of the body portion 630 and re-incident on the light emitting diode chip 710. Accordingly, the light emitting efficiency of the light emitting diode package is reduced. In the package substrate 600 of this embodiment, the light emitting diode chip 710 is mounted so that the bump pads 711 are offset in one direction. Accordingly, the first mounting portion 611 and the second mounting portion 621 are also formed to be offset in one direction for the accurate connection between the LED chip 710 and the package substrate 600. For example, d2 is 130 占 퐉 and d3 is 120 占 퐉. However, d2 and d3 are not limited to have different values, and the values of d2 and d3 may be the same or different depending on the position of the bump pads 711. [ For example, d2 and d3 may all be 130 占 퐉 or 120 占 퐉.
제1 리드 프레임(610)의 제1 단자부(613)는 몸체부(630)의 장축 방향에 위치한 일 측면으로부터 돌출된다. 즉, 제1 단자부(613)는 몸체부(630)의 짧은 길이의 일 측면에서 돌출된다. 또한, 제2 리드 프레임(620)의 제2 단자부(623)는 몸체부(630)의 장축 방향에 위치한 짧은 길이의 타 측면에서 돌출된다. 예를 들어, 제1 리드 프레임(610) 및 제2 리드 프레임(620) 각각의 돌출 거리(d4)는 200㎛일 수 있다.The first terminal portion 613 of the first lead frame 610 protrudes from one side located in the longitudinal direction of the body portion 630. That is, the first terminal portion 613 protrudes from one side of a short length of the body portion 630. The second terminal portion 623 of the second lead frame 620 protrudes from the other short side of the body portion 630 located in the longitudinal direction of the body portion 630. For example, the protrusion distance d4 of each of the first lead frame 610 and the second lead frame 620 may be 200 mu m.
제1 단자부(613) 상부 폭 및 제2 단자부(623)의 상부 폭은 몸체부(630)의 타 측면의 폭과 동일하다. 여기서, 폭은 패키지 기판(600)의 단축 방향에 위치한 서로 마주하는 양 측면 간의 거리이다.The upper width of the first terminal portion 613 and the upper width of the second terminal portion 623 are the same as the width of the other side of the body portion 630. Here, the width is the distance between both sides facing each other located in the minor axis direction of the package substrate 600.
제1 리드 프레임(610)은 몸체부(630)의 단축 방향에 위치한 긴 길이의 일 측면에는 복수의 제1 돌출부(619)가 형성되어 있다. 여기서, 제1 돌출부(619)가 형성된 제1 리드 프레임(610)의 일 측면은 제2 리드 프레임(620)과 마주하는 긴 길이의 타 측면과 대향하는 면이다.The first lead frame 610 has a plurality of first protrusions 619 formed on one long side of the body portion 630 in the short axis direction. One side of the first lead frame 610 on which the first protrusion 619 is formed is a side opposite to the other long side facing the second lead frame 620.
복수의 제1 돌출부(619)는 제1 리드 프레임(610)의 일 측면을 따라 나란히 위치하며, 서로 이격된다. 각각의 제1 돌출부(619)는 제1 리드 프레임(610)의 긴 길이의 일 측면과 연결된 부분이 하면에서 하프 에칭되어 형성된다. 따라서, 각각의 제1 돌출부(619)는 도 20 및 도 21에 도시된 바와 같이 제1 리드 프레임(610)의 상면에서 측부 방향으로 돌출된다. 또한, 제1 리드 프레임(610)에서 하프 에칭되어 오목한 구조의 제1 돌출부(619)의 하부는 몸체부(630)로 채워진다.The plurality of first projections 619 are arranged side by side along one side of the first lead frame 610 and are spaced apart from each other. Each of the first protrusions 619 is formed by half-etching a portion of the first lead frame 610 connected to one side of the long length of the first lead frame 610. Therefore, each of the first projections 619 protrudes in the lateral direction from the upper surface of the first lead frame 610 as shown in Figs. 20 and 21. Fig. In addition, the lower portion of the first protrusion 619 of the concave structure half-etched in the first lead frame 610 is filled with the body portion 630.
제1 리드 프레임(610)의 제1 돌출부(619)는 도 17에 도시된 바와 같이 몸체부(630)의 긴 길이의 일 측면에서 노출된다.The first protrusion 619 of the first lead frame 610 is exposed at one side of the long length of the body portion 630 as shown in Fig.
제2 리드 프레임(620)은 몸체부(630)의 단축 방향에 위치한 긴 길이의 일 측면에는 복수의 제2 돌출부(629)가 형성되어 있다. 여기서, 제2 돌출부(629)가 형성된 제2 리드 프레임(620)의 일 측면은 제1 리드 프레임(610)과 마주하는 긴 길이의 타 측면과 대향하는 면이다.The second lead frame 620 has a plurality of second protrusions 629 formed on one long side of the body portion 630 in the short axis direction. One side of the second lead frame 620 on which the second protrusion 629 is formed is a side opposite to the other long side facing the first lead frame 610.
복수의 제2 돌출부(629)는 제2 리드 프레임(620)의 일 측면을 따라 나란히 위치하며, 서로 이격된다. 각각의 제2 돌출부(629)는 제2 리드 프레임(620)의 긴 길이의 일 측면과 연결된 부분의 하부가 에칭되어 형성된다. 따라서, 각각의 제2 돌출부(629)는 도 20 및 도 21에 도시된 바와 같이 제2 리드 프레임(620)의 상면에서 측부 방향으로 돌출되다. 또한, 제2 리드 프레임(620)에서 하프 에칭되어 오목한 구조의 제2 돌출부(629)의 하부는 몸체부(630)로 채워진다.The plurality of second projections 629 are arranged side by side along one side of the second lead frame 620 and are spaced apart from each other. Each of the second projections 629 is formed by etching a lower portion of a portion of the second lead frame 620 that is connected to one side of the long length. Thus, each second projection 629 protrudes laterally from the upper surface of the second lead frame 620 as shown in Figs. 20 and 21. Fig. In addition, the lower portion of the second protrusion 629 of the concave structure half-etched in the second lead frame 620 is filled with the body portion 630.
제2 리드 프레임(620)의 제2 돌출부(629)는 몸체부(630)의 긴 길이의 타 측면에서 노출된다.The second projection 629 of the second lead frame 620 is exposed at the other long side of the body portion 630.
본 실시 예의 제1 리드 프레임(610) 및 제2 리드 프레임(620)은 제1 돌출부(619) 및 제2 돌출부(629)에 의해서 몸체부(630)와의 접합 면적이 증가한다. The first lead frame 610 and the second lead frame 620 of the present embodiment increase the bonding area of the first lead frame 610 and the second lead frame 620 to the body portion 630 by the first projections 619 and the second projections 629. [
몸체부(630)는 장축 방향에 위치한 일 측면 또는 타 측면 중 어느 하나에는 상부 모서리가 하프 에칭된 구조를 갖는다. 이는 패키지 기판(600)의 전극 방향을 나타내는 전극 마크(637)이다. 전극 마크(637)는 패키지 기판(600)의 외부 전원의 양극 및 음극 중 어느 하나와 연결되는 리드 프레임의 상부에 위치할 수 있다.The body portion 630 has a structure in which the upper edge is half-etched on one side or the other side positioned in the major axis direction. This is an electrode mark 637 indicating the electrode direction of the package substrate 600. The electrode mark 637 may be positioned above the lead frame connected to any one of the positive and negative electrodes of the external power source of the package substrate 600.
도 16을 참고하면, 몸체부(630)의 하면에서 제1 리드 프레임(610)의 제1 접속부(614) 및 제2 리드 프레임(620)의 제2 접속부(624)가 노출된다. 제1 접속부(614)는 제1-1 접속부(615), 제1-2 접속부(616) 및 제1-3 접속부(618)로 구분되며, 제2 접속부(624)는 제2-1 접속부(625) 및 제2-2 접속부(626)로 구분된다.16, the first connection portion 614 of the first lead frame 610 and the second connection portion 624 of the second lead frame 620 are exposed from the lower surface of the body portion 630. As shown in FIG. The first connection portion 614 is divided into a 1-1 connection portion 615, a 1-2 connection portion 616 and a 1-3 connection portion 618. The second connection portion 624 is divided into a 2-1 connection portion 625 and a second-second connection unit 626, respectively.
제1-1 접속부(615)는 제1 단자부(613)에서 연장되어 제1-2 접속부(616)와 연결된다. 즉, 제1-1 접속부(615)는 몸체부(630) 영역에 한정되어 위치하는 것이 아니라 몸체부(630) 외부 영역까지 연장되어 있는 넓은 면적으로 이루어진다.The 1-1 connection portion 615 extends from the first terminal portion 613 and is connected to the 1-2 connection portion 616. That is, the 1-1 connection portion 615 is not limited to the body portion 630 but has a large area extending to an outer region of the body portion 630.
제1-2 접속부(616)는 제1-1 접속부(615)의 일부에서 연장되며, 제1-1 접속부(615)보다 얇은 폭을 갖는다. 제1-2 접속부(616)는 몸체부(630)의 타 측면 방향으로 길게 연장된 구조를 갖는다. The 1-2 connecting portion 616 extends from a portion of the 1-1 connecting portion 615 and has a smaller width than the 1-1 connecting portion 615. [ The second connection portion 616 has a structure elongated in the other lateral direction of the body portion 630.
제1-3 접속부(618)는 제1-2 접속부(616)와 이격되어, 제1-2 접속부(616)와 제2-1 접속부(625) 사이에 위치한다. 제1-3 접속부(618)는 제1-2 접속부(616)와 이격되어 있다. 그러나 제1 리드 프레임(610)에서 제1-2 접속부(616)와 제1-3 접속부(618)의 상부 부분은 일부분이 연결되어 있다. 즉, 제1 리드 프레임(610)에서 제1-2 접속부(616) 및 제1-3 접속부(618)에 해당하는 하부과 그 상부의 일부는 서로 이격되어 있다. 그러나 제1 리드 프레임(610)에서 제1-2 접속부(616) 및 제1-3 접속부(618)의 상부의 일부는 제1 실장부(611) 및 제1 돌출부(619)에 의해서 서로 연결되어 있다. 제1 리드 프레임(610)에서 제1-2 접속부(616)와 제1-3 접속부(618) 사이의 이격된 공간은 몸체부(630)로 채워진다. 이와 같은 구조에 의해서, 제1 리드 프레임(610)와 몸체부(630) 간의 접합 면적이 증가하여 접합력이 향상된다. 또한, 몸체부(630)의 재료인 수지가 제1 리드 프레임(610) 및 제2 리드 프레임(620) 사이에 잘 흐르도록 할 수 있다. 이에 따라 몸체부(630)와 제1 리드 프레임(610) 및 제2 리드 프레임(620) 간의 기밀성을 향상시킬 수 있다. 또한, 제1 리드 프레임(610)의 상부에서 이격 공간을 갖는 부분을 통해서, 발광 다이오드 패키지(도 22 내지 도 24의 700)의 캐비티(631)에 패키징 공정 시 주입되거나 패키징 후에 발생한 공기, 가스 등이 외부로 배출될 수도 있다. The 1-3 connection 618 is spaced apart from the 1-2 connection 616 and located between the 1-2 connection 616 and the 2-1 connection 625. The first-third connecting portion 618 is spaced apart from the first-second connecting portion 616. However, in the first lead frame 610, the upper portion of the 1-2 connecting portion 616 and the 1-3 connecting portion 618 are partially connected. That is, the lower portion corresponding to the first-second connecting portion 616 and the first-third connecting portion 618 in the first lead frame 610 and a part of the upper portion thereof are spaced apart from each other. However, in the first lead frame 610, a part of the upper portion of the first-second connecting portion 616 and the first-third connecting portion 618 is connected to each other by the first mounting portion 611 and the first protruding portion 619 have. In the first lead frame 610, the spaced space between the first and second connection portions 616 and 618 is filled with the body portion 630. With this structure, the bonding area between the first lead frame 610 and the body portion 630 is increased, and the bonding force is improved. In addition, the resin, which is the material of the body portion 630, can flow well between the first lead frame 610 and the second lead frame 620. Accordingly, the airtightness between the body 630 and the first lead frame 610 and the second lead frame 620 can be improved. Further, air, gas, or the like generated in the packaging process or generated after packaging in the cavity 631 of the light emitting diode package (700 in FIGS. 22 to 24) through the portion having the spacing space at the upper portion of the first lead frame 610 May be discharged to the outside.
제2-1 접속부(625)는 제2 단자부(623)에서 연장되어 제2-2 접속부(626)와 연결된다. 또한, 제2-2 접속부(626)는 제2-1 접속부(625)의 일부에서 연장되며, 제2-1 접속부(625)보다 얇은 폭을 갖는다. 제2-2 접속부(626)는 몸체부(630)의 타 측면 방향으로 길게 연장된 구조를 갖는다.The second-second connecting portion 625 extends from the second terminal portion 623 and is connected to the second-second connecting portion 626. Further, the second-second connecting portion 626 extends from a portion of the second-one connecting portion 625, and has a width smaller than that of the second-one connecting portion 625. The second-second connecting portion 626 has a structure elongated in the other lateral direction of the body portion 630.
본 실시 예에 따르면, 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 모든 모서리 부분은 곡률을 갖도록 형성된다. 제1 리드 프레임(610) 및 제2 리드 프레임(620)은 모서리 부분이 곡률을 갖도록 형성되므로, 몸체부(630)와의 접착 면적이 증가하여 접착력이 향상될 수 있다. 리드 프레임의 모서리가 직각인 경우에는 몸체부를 이루는 수지가 모서리의 안쪽까지 흐르지 못하여, 리드 프레임과 몸체부(630) 사이에 공간이 생길 수 있다. 그러나 본 실시 예에서는 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 모서리가 곡률을 가지므로, 몸체부(630)를 이루는 수지가 모서리 안쪽까지 흘러 완전히 채워질 수 있다. 따라서, 본 실시 예에 따른 패키지 기판(600)은 제1 리드 프레임(610) 및 제2 리드 프레임(620)과 몸체부(630) 사이의 기밀성이 향상될 수 있다.According to the present embodiment, all the corner portions of the first lead frame 610 and the second lead frame 620 are formed to have a curvature. Since the first lead frame 610 and the second lead frame 620 are formed so that the corner portions have a curvature, the adhesion area with the body portion 630 increases, and the adhesion can be improved. When the corner of the lead frame is at right angles, the resin forming the body portion can not flow to the inside of the corner, and a space may be formed between the lead frame and the body portion 630. However, since the corners of the first lead frame 610 and the second lead frame 620 have a curvature, the resin forming the body portion 630 flows to the inside of the corners and can be completely filled in this embodiment. Therefore, the airtightness between the first lead frame 610 and the second lead frame 620 and the body portion 630 can be improved in the package substrate 600 according to the present embodiment.
본 실시 예에서는 제1 리드 프레임(610)에는 2개의 제1 관통홀(641)이 형성되어 있으며, 제2 리드 프레임(620)에도 2개의 제2 관통홀(642)이 형성되어 있다.In the present embodiment, two first through holes 641 are formed in the first lead frame 610 and two second through holes 642 are formed in the second lead frame 620.
제1 관통홀(641)은 제1-1 접속부(615)에 위치하며 제1 리드 프레임(610)의 상면에서 하면까지 관통하도록 형성된다. 또한, 제2 관통홀(642)은 제2-1 접속부(625)에 위치하면, 제2 리드 프레임(620)의 상면에서 하면까지 관통하도록 형성된다.The first through hole 641 is located at the 1-1 connection portion 615 and is formed to penetrate from the upper surface to the lower surface of the first lead frame 610. The second through hole 642 is formed to penetrate from the upper surface to the lower surface of the second lead frame 620 when the second through hole 642 is located at the second-first connecting portion 625.
2개의 제1 관통홀(641) 및 제2 관통홀(642)은 몸체부(630)로 채워져, 제1 리드 프레임(610) 및 제2 리드 프레임(620)과 몸체부(630) 간의 접착력이 향상된다.The two first through holes 641 and the second through holes 642 are filled with the body portion 630 so that the adhesive force between the first lead frame 610 and the second lead frame 620 and the body portion 630 .
본 실시 예에 따르면, 제1 관통홀(641) 및 제2 관통홀(642)은 최소한 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 사출 공정으로 형성될 수 있는 정도의 크기를 갖도록 형성된다. 또한, 2개의 제1 관통홀(641) 및 제2 관통홀(642)은 제1-1 접속부(615) 및 제2-1 접속부(625) 내에서 가능하면 크게 형성될 수 있다. 제1 관통홀(641) 및 제2 관통홀(642)이 크게 형성될 수록 몸체부(630)와의 기밀성이 향상될 수 있다. 즉, 제1 관통홀(641) 및 제2 관통홀(642)은 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 사출 공정, 몸체부(630)와의 접착력 및 기밀성을 모두 고려한 크기로 형성될 수 있다. 예를 들어, 제1 관통홀(641) 및 제2 관통홀(642)은 300㎛의 직경(d5)을 가질 수 있다.The first through hole 641 and the second through hole 642 may be formed to have a size that can be formed by at least the injection process of the first lead frame 610 and the second lead frame 620 . The two first through holes 641 and the second through holes 642 may be formed as large as possible in the 1-1 connection portion 615 and the 2-1 connection portion 625. As the first through holes 641 and the second through holes 642 are formed larger, the airtightness with the body portion 630 can be improved. That is, the first through hole 641 and the second through hole 642 are formed in a size that takes into account the injection process of the first lead frame 610 and the second lead frame 620, the adhesive force with the body portion 630, As shown in FIG. For example, the first through-hole 641 and the second through-hole 642 may have a diameter d5 of 300 mu m.
또한, 도 16을 참고하면, 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 제1 곡면(A)과 제2 곡면(B)는 서로 다른 곡률을 갖는다.Referring to FIG. 16, the first curved surface A and the second curved surface B of the first lead frame 610 and the second lead frame 620 have different curvatures.
제1 리드 프레임(610)의 제1 곡면(A)은 제1-1 접속부(615)와 제1-2 접속부(616)가 연결되는 부분으로, 제2 리드 프레임(620)의 제2-2 접속부(626)의 모서리와 마주한다. 또한, 제2 리드 프레임(620)의 제1 곡면(A)은 제2-1 접속부(625)와 제2-2 접속부(626)가 연결되는 곡면 부분으로, 제1 리드 프레임(610)의 제1-3 접속부(618)의 모서리와 마주한다.The first curved surface A of the first lead frame 610 is a portion to which the 1-1 connection portion 615 and the 1-2 connection portion 616 are connected and the second curved surface A of the second lead frame 620, And faces the edge of the connection portion 626. The first curved surface A of the second lead frame 620 is a curved surface portion to which the second-second connecting portion 625 and the second-second connecting portion 626 are connected, 1-3 connection portion 618 of FIG.
제1 리드 프레임(610)의 제1 접속부(614) 및 제2 리드 프레임(620)의 제2 접속부(624)는 전도성 접착제와 접촉하는 부분이다. 이때, 제1 곡면(A)은 제1 접속부(614) 및 제2 접속부(624)에서 갑자기 폭이 작아지는 부분이기 때문에, 다른 부분보다 전도성 접착제가 제1 접속부(614) 및 제2 접속부(624)의 내측에서 몸체부(630) 쪽으로 퍼질 가능성이 많다. 제1 접속부(614)와 접촉하는 전도성 접착제가 퍼져 제2 접속부(624)와 접촉하거나 제2 접속부(624)와 접촉하는 전도성 접착제가 퍼져 제1 접속부(614)와 접촉하게 되면, 제1 리드 프레임(610)과 제2 리드 프레임(620)은 서로 단락될 수 있다. 이를 방지하기 위해서 제1 리드 프레임(610)의 제1 곡면(A)은 마주하는 제2 리드 프레임(620)의 제2-2 접속부(626)의 모서리와 최대한 이격되어야 한다. 또한, 제2 리드 프레임(620)의 제1 곡면(A)은 마주하는 제1 리드 프레임(610)의 제1-3 접속부(618)의 모서리와 최대한 이격되어야 한다. 따라서, 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 제1 곡면(A)은 마주하는 다른 리드 프레임의 모서리와 가능한 멀리 이격되도록 하기 위해서 작은 곡률을 갖는다.The first connecting portion 614 of the first lead frame 610 and the second connecting portion 624 of the second lead frame 620 are portions in contact with the conductive adhesive. At this time, since the first curved surface A is a portion where the width suddenly decreases in the first connecting portion 614 and the second connecting portion 624, the conductive adhesive is applied to the first connecting portion 614 and the second connecting portion 624 The body portion 630 may be formed of a metal. When a conductive adhesive in contact with the first connection portion 614 spreads to contact the second connection portion 624 or a conductive adhesive that contacts the second connection portion 624 spreads to come in contact with the first connection portion 614, The first lead frame 610 and the second lead frame 620 may be shorted to each other. In order to prevent this, the first curved surface A of the first lead frame 610 should be spaced as far as possible from the edge of the second-second connecting portion 626 of the facing second lead frame 620. In addition, the first curved surface A of the second lead frame 620 should be as far as possible from the edge of the first-third connecting portion 618 of the first lead frame 610 facing each other. Therefore, the first curved surface A of the first lead frame 610 and the second lead frame 620 has a small curvature so as to be spaced as far as possible from the edges of the other lead frames facing each other.
제1 리드 프레임(610)의 제2 곡면(B)은 제1-1 접속부(615)에서 폭이 제1 단자부(613)와 동일하다가 작아지는 곡면 처리된 부분이다. 또한, 제2 리드 프레임(620)의 제2 곡면(B)은 제2-1 접속부(625)에서 폭이 제2 단자부(623)와 동일하다가 작아지는 곡면 처리된 부분이다. 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 제2 곡면(B)은 모두 단축 방향에 위치한 몸체부(630)의 측면에 인접해 있다.The second curved surface B of the first lead frame 610 is a curved surface portion that is the same as the first terminal portion 613 in the 1-1 connection portion 615 and becomes smaller. The second curved surface B of the second lead frame 620 is a curved surface portion having the same width as the second terminal portion 623 in the second-first connecting portion 625 and becoming smaller. The first curved surface B of the first lead frame 610 and the second curved surface B of the second lead frame 620 are all adjacent to the side surface of the body portion 630 located in the minor axis direction.
단축 방향에 위치한 몸체부(630)의 양 측면은 몸체부(630)의 중심 부분보다 제1 리드 프레임(610) 및 제2 리드 프레임(620)과의 접합 면적이 작다. 따라서, 몸체부(630)의 양 측면과 인접한 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 제2 곡면(B)은 몸체부(630)와 의 접합 면적이 증가하도록 하기 위해서 큰 곡률을 갖도록 형성된다. 또한, 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 제2 곡면(B)이 큰 곡률을 가지므로, 몸체부(630)가 제2 곡면(B) 전체와 밀착될 수 있다. 따라서, 제1 리드 프레임(610) 및 제2 리드 프레임(620)의 큰 곡률을 갖는 제2 곡면(B)에 의해서 제1 리드 프레임(610) 및 제2 리드 프레임(620)과 몸체부(630) 간의 접합력 및 밀착력이 향상된다. 이와 같은 패키지 기판(600)이 적용된 발광 다이오드 패키지는 밀폐성이 우수하여 가스, 수분, 먼지 등이 외부에서 내부로 침투하는 것을 방지할 수 있다.Both side surfaces of the body portion 630 located in the minor axis direction have a smaller junction area with the first lead frame 610 and the second lead frame 620 than the center portion of the body portion 630. The first curved surface B of the first lead frame 610 and the second curved surface B of the second lead frame 620 adjacent to both sides of the body portion 630 is larger than the curved surface B of the body portion 630 in order to increase the area of contact with the body portion 630 And is formed to have a curvature. Since the first curved surface B of the first lead frame 610 and the second curved surface B of the second lead frame 620 have a large curvature, the body portion 630 can be brought into close contact with the entire second curved surface B. The first lead frame 610 and the second lead frame 620 and the body portion 630 are formed by the second curved surface B having a large curvature of the first lead frame 610 and the second lead frame 620. [ ) Is improved. The light emitting diode package to which the package substrate 600 is applied is excellent in hermeticity and can prevent gas, moisture, dust, etc. from penetrating from the outside to the inside.
이와 같이, 본 실시 예에 따르면, 제1 리드 프레임(610) 및 제2 리드 프레임(620)은 전도성 접착제에 의한 단락 방지 및 몸체부(630)와의 접착력 및 밀착력 향상을 고려하여, 제2 곡면(B)이 상대적으로 제1 곡면(A)보다 큰 곡률을 갖도록 형성된다.The first lead frame 610 and the second lead frame 620 can be prevented from being short-circuited by the conductive adhesive agent and improving the adhesive force and adhesion between the first lead frame 610 and the body portion 630, B are formed to have a larger curvature than the first curved surface A relatively.
또한, 도 18은 본 발명의 제3 실시 예에 따른 패키지 기판(600)을 장축 방향으로 절단한 단면도(E1-E2)이다. 도 19는 본 발명의 제3 실시 예에 따른 패키지 기판(600)을 장축 방향으로 절단한 다른 단면도(E3-E4)이다. 또한, 도 20은 본 발명의 제3 실시 예에 따른 패키지 기판(600)을 단축 방향으로 절단한 단면도(E5-E6)이다.18 is a cross-sectional view (E1-E2) of the package substrate 600 according to the third embodiment of the present invention taken along the major axis. Fig. 19 is another sectional view (E3-E4) of the package substrate 600 according to the third embodiment of the present invention, taken along the major axis. 20 is a cross-sectional view (E5-E6) of the package substrate 600 according to the third embodiment of the present invention cut in the minor axis direction.
도 15 및 도 18을 참고하면, 몸체부(630)의 내벽의 상부에는 홈(635)이 형성된다. 홈(635)은 몸체부(630)의 내벽에서 몸체부(630)의 외벽 방향으로 형성된다. 이와 같이 형성된 홈(635)은 몸체부(630)의 상면과 캐비티(631)를 이루는 내벽 사이에 형성된다. 즉, 패키지 기판(600)의 상부는 홈(635)에 의해서 몸체부(630)의 상면과 내벽을 연결하는 모서리가 움푹 들어간 다단 구조가 된다.Referring to FIGS. 15 and 18, a groove 635 is formed on the upper portion of the inner wall of the body portion 630. The groove 635 is formed in the direction of the outer wall of the body portion 630 from the inner wall of the body portion 630. The groove 635 thus formed is formed between the upper surface of the body portion 630 and the inner wall forming the cavity 631. That is, the upper part of the package substrate 600 is a multi-stepped structure having a recessed corner connecting the upper surface and the inner wall of the body part 630 by the grooves 635.
도 15에서는 홈(635)이 몸체부(630)의 장축 방향에 위치한 내벽에 형성된 것으로 도시되었으나, 홈(635)이 형성되는 위치는 이에 한정되는 것은 아니다. 예를 들어, 홈(635)은 몸체부(630)의 전체 내벽에 형성될 수도 있다. 15, the groove 635 is formed on the inner wall positioned in the longitudinal direction of the body portion 630, but the position where the groove 635 is formed is not limited thereto. For example, the groove 635 may be formed on the entire inner wall of the body portion 630.
캐비티(631)의 내부에 밀봉 부재(미도시)를 채울 때나 온도 등의 변화로 밀봉 부재의 부패가 팽창하게 되면, 밀봉 부재가 몸체부(630)의 캐비티(631)에서 넘치는 경우가 발생할 수 있다. 이때, 캐비티(631)를 채우고 넘친 밀봉 부재는 홈(635)에 위치하게 된다. 따라서, 홈(635)에 의해서 밀봉 부재가 몸체부(630)의 상면을 덮는 것을 방지할 수 있다.When the sealing member (not shown) is filled in the cavity 631 or when the decay of the sealing member is expanded due to a change in temperature or the like, the sealing member may overflow in the cavity 631 of the body portion 630 . At this time, the sealing member that fills and overflows the cavity 631 is located in the groove 635. Therefore, it is possible to prevent the sealing member from covering the upper surface of the body portion 630 by the groove 635. [
도 18 및 도 20을 비교하면, 몸체부(630)는 단축 방향에 위치한 내벽의 기울기(α2)가 장축 방향에 위치한 내벽의 기울기(α1) 보다 작다 여기서, 기울기는 캐비티(631)의 바닥과 내벽이 이루는 기울기이다. 즉, 몸체부(630)의 단축 방향에 위치한 내벽이 장축 방향에 위치한 내벽보다 더 가파르도록 형성된다.18 and 20, the inclination? 2 of the inner wall positioned in the minor axis direction is smaller than the slope? 1 of the inner wall positioned in the major axis direction in the body portion 630. Here, the slope is the angle between the bottom of the cavity 631 and the inner wall This is the slope. That is, the inner wall positioned in the short axis direction of the body portion 630 is formed so as to be steeper than the inner wall positioned in the longitudinal direction.
또한, 도 22 내지 도 24를 참고하면, 패키지 기판(600)에 발광 다이오드 칩(710)을 실장하였을 때, 발광 다이오드 칩(710)과 내벽 간의 거리가 장축 방향 보다 단축 방향에서 더 짧다. 즉, 단축 방향에 위치한 몸체부(630)의 내벽과 발광 다이오드 칩(710)의 측면 사이 거리가 짧다. 따라서, 단축 방향에 위치한 몸체부(630)의 내벽의 기울기는 몸체부(630)의 한정된 단축 방향의 폭과 몸체부(630)가 사출 공정으로 형성된다는 점이 고려되어야 한다. 또한, 발광 다이오드 칩(710)의 측면에서 방출된 광은 패키지 기판(600)의 상부 방향으로 반사되어야 한다. 따라서, 단축 방향에 위치한 몸체부(630)의 내벽은 발광 다이오드 칩(710)의 측면에서 방출된 광이 몸체부(630)의 내벽에서 반사되어 발광 다이오드 칩(710)에 재입사되는 것을 방지할 수 있어야 한다. 이와 같이, 단축 방향에 위치한 몸체부(630)의 내벽의 기울기(α2)는 발광 다이오드 칩(710)과의 거리, 사출 공정 및 광의 재입사 문제 등을 고려되어야 한다.22 to 24, when the light emitting diode chip 710 is mounted on the package substrate 600, the distance between the light emitting diode chip 710 and the inner wall is shorter in the shorter axis direction than in the longer axis direction. That is, the distance between the inner wall of the body portion 630 located in the minor axis direction and the side surface of the light emitting diode chip 710 is short. Therefore, the inclination of the inner wall of the body portion 630 located in the minor axis direction should be considered in the limited short axis direction of the body portion 630 and that the body portion 630 is formed by an injection process. Further, the light emitted from the side of the light emitting diode chip 710 must be reflected upward of the package substrate 600. Accordingly, the inner wall of the body portion 630 located in the minor axis direction prevents the light emitted from the side of the light emitting diode chip 710 from being reflected by the inner wall of the body portion 630 and re-entering the light emitting diode chip 710 Should be able to. As described above, the inclination [alpha] 2 of the inner wall of the body portion 630 located in the minor axis direction needs to be taken into consideration, such as the distance from the light emitting diode chip 710, the injection process,
장축 방향에 위치한 몸체부(630)의 내벽은 발광 다이오드 칩(710)과의 거리가 단축 방향보다 크다. 즉, 장축 방향에 위치한 몸체부(630)의 내벽과 발광 다이오드 칩(710) 사이에는 충분한 공간이 형성되어 있다. 따라서, 장축 방향에 위치한 몸체부(630)의 내벽의 기울기(α1)는 발광 다이오드 칩(710)의 광이 발광 다이오드 칩(710)으로 재입사 되지 않고 패키지 기판(600)의 상부 방향을 향하도록 고려되어야 한다.The inner wall of the body portion 630 located in the major axis direction is larger in distance from the light emitting diode chip 710 than in the minor axis direction. That is, a sufficient space is formed between the inner wall of the body portion 630 located in the major axis direction and the light emitting diode chip 710. Therefore, the inclination? 1 of the inner wall of the body portion 630 located in the major axis direction is set such that the light from the LED chip 710 does not enter the light emitting diode chip 710 again but toward the upper direction of the package substrate 600 Should be considered.
예를 들어, 몸체부(630)에서 장축 방향에 위치한 내벽의 기울기(α1)는 147°이고, 단축 방향에 위치한 내벽의 기울기(α2)는 122°이다.For example, the inclination? 1 of the inner wall positioned in the major axis direction in the body portion 630 is 147 占 and the inclination? 2 of the inner wall located in the minor axis direction is 122 占.
이와 같이 형성된 발광 다이오드 패키지(700)는 발광 다이오드 칩(710)의 광이 내벽에 반사되어 발광 다이오드 칩(710)으로 재입사되는 것을 방지할 수 있어, 발광 다이오드 패키지의 광 손실을 최소화할 수 있다.The thus formed light emitting diode package 700 can prevent light from the light emitting diode chip 710 from being reflected on the inner wall and re-entering into the light emitting diode chip 710, thereby minimizing optical loss of the light emitting diode package .
도 22 내지 도 24는 본 발명의 또 다른 실시 예에 따른 발광 다이오드 패키지를 나타낸 예시도이다.22 to 24 illustrate an LED package according to another embodiment of the present invention.
도 22는 또 다른 실시 예에 따른 발광 다이오드 패키지의 상부 평면도이다. 또한, 도 23은 도 22의 발광 다이오드 패키지의 단면도(F1-F2) 이다. 또한, 도 24는 도 22의 발광 다이오드 패키지의 다른 단면도(F3-F4)이다.22 is a top plan view of a light emitting diode package according to another embodiment. 23 is a sectional view (F1-F2) of the light emitting diode package of Fig. 24 is another sectional view (F3-F4) of the light emitting diode package of Fig.
발광 다이오드 패키지(700)는 패키지 기판(600), 발광 다이오드 칩(710), 제너 다이오드 칩(720) 및 밀봉 부재(750)를 포함한다. 여기서, 패키지 기판(600)은 도 12 내지 도 21을 통해 설명한 제3 실시 예에 따른 패키지 기판이다.The light emitting diode package 700 includes a package substrate 600, a light emitting diode chip 710, a zener diode chip 720 and a sealing member 750. Here, the package substrate 600 is a package substrate according to the third embodiment described with reference to FIGS. 12 to 21. FIG.
발광 다이오드 칩(710)의 하부에는 범프 패드(711)들이 위치한다. 여기서 발광 다이오드 칩(710)의 범프 패드들(711)은 발광 다이오드 칩(710) 내부의 n형 반도체층과 전기적으로 연결되는 범프 패드와 p형 반도체층과 전기적으로 연결되는 범프 패드를 포함한다.Bump pads 711 are located below the light emitting diode chip 710. The bump pads 711 of the light emitting diode chip 710 include a bump pad electrically connected to the n-type semiconductor layer in the light emitting diode chip 710 and a bump pad electrically connected to the p-type semiconductor layer.
발광 다이오드 칩(710)은 제1 실장부(611) 및 제2 실장부(621) 상에 배치된다. 이때, 제1 실장부(611) 및 제2 실장부(621)와 범프 패드들(711) 사이에는 전도성 접착제(730)가 위치한다. 발광 다이오드 칩(710)은 전도성 접착제(730)에 의해서 제1 실장부(611) 및 제2 실장부(621) 상에 고정되며, 제1 실장부(611) 및 제2 실장부(621)와 전기적으로 연결된다. 예를 들어, 전도성 접착제(730)는 솔더(Solder)이다. The light emitting diode chip 710 is disposed on the first mounting portion 611 and the second mounting portion 621. At this time, a conductive adhesive agent 730 is positioned between the first mounting portion 611 and the second mounting portion 621 and the bump pads 711. The light emitting diode chip 710 is fixed on the first mounting portion 611 and the second mounting portion 621 by the conductive adhesive 730 and the first mounting portion 611 and the second mounting portion 621 And is electrically connected. For example, the conductive adhesive 730 is a solder.
제너 다이오드 칩(720)은 제2 제너 연결부(662) 상에 배치되며, 제2 제너 연결부(662)와 와이어로 연결된다. 이때, 제너 다이오드 칩(720)의 상부 및 하부에 각각 제너 다이오드 칩(720)의 내부와 전기적으로 연결되는 범프 패드들(721)이 위치할 수 있다.The zener diode chip 720 is disposed on the second zener connecting portion 662 and connected to the second zener connecting portion 662 by a wire. At this time, the bump pads 721 electrically connected to the inside of the zener diode chip 720 may be located on the upper and lower portions of the zener diode chip 720, respectively.
제너 다이오드 칩(720)의 범프 패드(721)와 제2 제너 연결부(662) 사이에 전도성 접착제(730)가 위치할 수 있다. 따라서, 제너 다이오드 칩(720)은 전도성 접착제(730)에 의해서 제2 제너 연결부(662)의 상부에 고정되며, 제2 제너 연결부(662)와 전기적으로 연결된다.A conductive adhesive 730 may be placed between the bumper pad 721 of the zener diode chip 720 and the second zener connecting portion 662. The zener diode chip 720 is fixed to the upper portion of the second zener connecting portion 662 by the conductive adhesive 730 and is electrically connected to the second zener connecting portion 662. [
제1 실장부(611)와 제1 제너 연결부(661)는 제1 리드 프레임(610)에 형성된 것으로 서로 전기적으로 연결된다. 또한, 제2 실장부(621)와 제2 제너 연결부(662)는 제2 리드 프레임(620)에 형성된 것으로 서로 전기적으로 연결된다. The first mounting portion 611 and the first zener connecting portion 661 are formed on the first lead frame 610 and are electrically connected to each other. The second mounting portion 621 and the second zener connecting portion 662 are formed on the second lead frame 620 and are electrically connected to each other.
따라서, 본 실시 예의 발광 다이오드 패키지(700)는 발광 다이오드 칩(710)과 제너 다이오드 칩(720)이 전기적으로 병렬 연결된다. Therefore, in the light emitting diode package 700 of this embodiment, the light emitting diode chip 710 and the zener diode chip 720 are electrically connected in parallel.
발광 다이오드 칩(710)과 제너 다이오드 칩(720)이 배치된 패키지 기판(600)의 캐비티(631)에는 밀봉 부재(750)가 채워진다.The cavity 631 of the package substrate 600 on which the light emitting diode chip 710 and the zener diode chip 720 are disposed is filled with the sealing member 750.
위에서 설명한 바와 같이 본 발명에 대한 구체적인 설명은 첨부된 도면을 참고한 실시 예에 의해서 이루어졌지만, 상술한 실시 예는 본 발명의 바람직한 예를 들어 설명하였을 뿐이므로, 본 발명이 실시 예에만 국한되는 것으로 이해돼서는 안 되며, 본 발명의 권리범위는 후술하는 청구범위 및 그 등가개념으로 이해되어야 할 것이다.Although the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It should be understood that the scope of the present invention is to be understood as the scope of the following claims and their equivalents.

Claims (25)

  1. 상부에 캐비티를 가지며 일 방향으로 기다란 형상의 몸체부;An elongated body portion having a cavity in its upper portion and extending in one direction;
    상기 몸체부의 바닥에 결합되고, 상기 캐비티에서 노출된 제1 실장부, 상기 몸체부의 길이가 짧은 일 측면에서 노출된 제1 단자부 및 상기 몸체부의 하면에 노출된 제1 접속부를 포함하는 제1 리드 프레임; 및A first lead frame coupled to the bottom of the body and including a first mounting portion exposed from the cavity, a first terminal exposed at one side of the body having a shorter length, and a first connection exposed at a lower surface of the body, ; And
    상기 제1 리드 프레임으로부터 횡 방향으로 이격되어 상기 몸체부의 바닥에 결합되고, 상기 캐비티에 노출된 제2 실장부, 상기 몸체부의 길이가 짧은 타 측면에서 노출된 제2 단자부 및 상기 몸체부의 하면에 노출된 제2 접속부를 포함하는 제2 리드 프레임; 을 포함하고,A second mounting portion exposed in the cavity, a second terminal portion exposed on the other side of the body portion, and a second terminal portion exposed on the bottom surface of the body portion, A second lead frame including a second connection portion connected to the first lead frame; / RTI >
    상기 제1 접속부는 상기 제1 단자부에서 연장된 제1-1 접속부 및 상기 제1-1 접속부의 일부에서 상기 일 방향을 따라 상기 제2 단자부측으로 연장되며 상기 제1-1 접속부보다 작은 폭의 제1-2 접속부를 포함하며,The first connecting portion includes a first connecting portion extending from the first terminal portion and a second connecting portion extending from the portion of the first connecting portion along the first direction toward the second terminal portion, 1-2 connection,
    상기 제2 접속부는 상기 제2 단자부에서 연장된 제2-1 접속부 및 상기 제2-1 접속부의 일부에서 상기 일 방향을 따라 상기 제1 단자부측으로 연장되며 상기 제2-1 접속부보다 작은 폭의 제2-2 접속부를 포함하는 발광 다이오드 패키지.The second connecting portion includes a second-1 connecting portion extending from the second terminal portion, and a second connecting portion extending from the portion of the second-1 connecting portion along the one direction toward the first terminal portion, A light emitting diode package comprising a 2-2 connection.
  2. 청구항 1에 있어서,The method according to claim 1,
    상기 제1-2 접속부는 상기 제1-1 접속부와 상기 제2-1 접속부 사이에 위치하고,And the second 1-2 connecting portion is located between the 1-1 connecting portion and the 2-1 connecting portion,
    상기 제2-2 접속부는 상기 제2-1 접속부와 상기 제1-1 접속부 사이에 위치하는 발광 다이오드 패키지.And the second-second connecting portion is located between the second-first connecting portion and the first connecting portion.
  3. 청구항 1에 있어서,The method according to claim 1,
    상기 제1 접속부는 상기 제1-2 접속부와 상기 제2-1 접속부 사이에 위치하는 제1-3 접속부를 더 포함하는 제1-3 접속부를 더 포함하는 발광 다이오드 패키지.The light emitting diode package of claim 1, wherein the first connecting portion further comprises a third connecting portion including a third connecting portion located between the first connecting portion and the second connecting portion.
  4. 청구항 1에 있어서,The method according to claim 1,
    상기 몸체부의 상기 캐비티는 하부에서 상부로 갈수록 폭이 커지는 발광 다이오드 패키지.Wherein the cavity of the body portion has a larger width as it goes from the lower portion to the upper portion.
  5. 청구항 4에 있어서,The method of claim 4,
    상기 캐비티는 상기 몸체부의 서로 마주보는 한 쌍의 길이가 긴 내벽과 서로 마주보는 한 쌍의 길이가 짧은 내벽으로 둘러싸인 일 방향으로 기다란 형상이며,The cavity has an elongated shape in one direction surrounded by a pair of long inner walls facing each other of the body and a pair of short inner walls facing each other,
    상기 캐비티의 바닥면을 기준으로 상기 길이가 긴 내벽의 기울기는 상기 길이가 짧은 내벽의 기울기보다 작은 발광 다이오드 패키지.Wherein a slope of the long inner wall is smaller than a slope of the short inner wall with respect to a bottom surface of the cavity.
  6. 청구항 1에 있어서,The method according to claim 1,
    상기 몸체부의 상기 캐비티를 이루는 내벽의 상부에는 홈이 더 형성된 발광 다이오드 패키지.And a groove is further formed on an upper portion of an inner wall of the cavity of the body portion.
  7. 청구항 1에 있어서,The method according to claim 1,
    상기 제1 리드 프레임 및 상기 제2 리드 프레임은 상면에서 하면까지 관통하며, 내부에 상기 몸체부가 채워지는 관통홀을 더 포함하는 발광 다이오드 패키지.Wherein the first lead frame and the second lead frame further include a through hole penetrating from a top surface to a bottom surface and filled with the body portion.
  8. 청구항 6에 있어서,The method of claim 6,
    상기 관통홀은 상부의 폭이 하부의 폭보다 작은 발광 다이오드 패키지.Wherein the through hole has an upper width smaller than a lower width.
  9. 청구항 1에 있어서,The method according to claim 1,
    상기 제1 리드 프레임 및 상기 제2 리드 프레임은 상면에서 오목하게 형성된 홈인 홈부를 더 포함하며,The first lead frame and the second lead frame may further include a groove, which is a groove recessed from the upper surface,
    상기 홈부는 상기 제1 실장부 및 상기 제2 실장부의 테두리를 따라 형성되고, Wherein the groove portion is formed along an edge of the first mounting portion and the second mounting portion,
    상기 몸체부는 상기 홈부를 덮는 발광 다이오드 패키지.And the body portion covers the groove portion.
  10. 청구항 1에 있어서,The method according to claim 1,
    상기 제1-2 접속부와 상기 제2-1 접속부 간의 이격 거리 및 상기 2-2 접속부와 상기 제1-1 접속부 간의 이격 거리 거리는,The distance between the second-second connecting portion and the second-first connecting portion, and the distance between the second connecting portion and the first-
    상기 제1-2 접속부와 상기 제2-2 접속부 간의 이격 거리보다 크며, And a distance between the second connecting portion and the second connecting portion is greater than a distance between the connecting portion and the connecting portion,
    상기 제1-2 접속부와 상기 몸체부의 측면 간의 이격 거리 및 상기 제2-2 접속부와 상기 몸체부의 측면 간의 이격 거리보다 작은 발광 다이오드 패키지.And the distance between the second-second connecting portion and the side surface of the body portion is smaller than the distance between the second-second connecting portion and the side surface of the body portion.
  11. 청구항 1에 있어서,The method according to claim 1,
    상기 몸체부의 상기 캐비티에 배치되어 상기 제1 실장부 및 상기 제2 실장부와 전기적으로 연결되는 발광 다이오드 칩; 및A light emitting diode chip disposed in the cavity of the body portion and electrically connected to the first mounting portion and the second mounting portion; And
    상기 발광 다이오드 칩을 둘러싸도록 상기 캐비티에 충전된 밀봉 부재;를 더 포함하는 발광 다이오드 패키지.And a sealing member filled in the cavity to surround the light emitting diode chip.
  12. 청구항 11에 있어서,The method of claim 11,
    상기 발광 다이오드 칩은,The light emitting diode chip includes:
    일 방향으로 기다란 형상의 기판;An elongated substrate in one direction;
    상기 기판 하면에서부터 제1 도전성 반도체층, 활성층 및 제2 도전성 반도체층이 차례대로 적층된 발광 구조체;A light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially stacked from the bottom surface of the substrate;
    상기 제1 도전성 반도체층와 전기적으로 연결된 제1 범프 패드; 및A first bump pad electrically connected to the first conductive semiconductor layer; And
    상기 제1 범프 패드와 횡방향으로 이격되되며, 상기 제2 도전성 반도체층과 전기적으로 연결된 제2 범프 패드;를 포함하며,And a second bump pad spaced laterally from the first bump pad and electrically connected to the second conductive semiconductor layer,
    상기 제1 범프 패드 및 상기 제2 범프 패드는 상기 기판의 일 방향을 따라 길게 형성되며,Wherein the first bump pad and the second bump pad are elongated along one direction of the substrate,
    상기 제1 범프 패드는 상기 제1 실장부 상부에 위치하고, 상기 제2 범프 패드는 상기 제2 실장부 상부에 위치하는 발광 다이오드 패키지.Wherein the first bump pad is located above the first mounting portion and the second bump pad is located above the second mounting portion.
  13. 청구항 12에 있어서,The method of claim 12,
    상기 제1 범프 패드와 상기 제2 범프 패드 간의 이격 거리는 상기 제1 실장부와 상기 제2 실장부 간의 이격 거리와 동일한 발광 다이오드 패키지.Wherein a distance between the first bump pad and the second bump pad is equal to a distance between the first mounting portion and the second mounting portion.
  14. 청구항 11에 있어서,The method of claim 11,
    상기 캐비티에 배치되어 상기 제너 다이오드 칩을 더 포함하며,Further comprising the zener diode chip disposed in the cavity,
    상기 제1 리드 프레임 및 상기 제2 리드 프레임은 상기 캐비티에 노출되며 상기 제너 다이오드 칩과 전기적으로 연결되는 제너 연결부를 더 포함하고,Wherein the first lead frame and the second lead frame further include a zener connection portion exposed to the cavity and electrically connected to the zener diode chip,
    상기 제너 다이오드 칩은 상기 제1 리드 프레임 및 상기 제1 리드 프레임에 의해서 상기 발광 다이오드 칩과 병렬 연결되는 발광 다이오드 패키지.Wherein the Zener diode chip is connected in parallel with the LED chip by the first lead frame and the first lead frame.
  15. 청구항 12에 있어서,The method of claim 12,
    상기 제1 리드 프레임 및 상기 제2 리드 프레임의 상면에서 하면까지의 거리는 상기 발광 다이오드 칩의 길이가 긴 두 측면 사이의 거리와 동일한 발광 다이오드 패키지.Wherein a distance from an upper surface to a lower surface of the first lead frame and the second lead frame is equal to a distance between two longer sides of the LED chip.
  16. 청구항 1에 있어서,The method according to claim 1,
    상기 제1 접속부 및 상기 제2 접속부의 최대 폭은 상기 몸체부의 최대 폭과 동일한 발광 다이오드 패키지.Wherein a maximum width of the first connection portion and the second connection portion is equal to a maximum width of the body portion.
  17. 청구항 1에 있어서,The method according to claim 1,
    상기 제1 리드 프레임은 상기 제1 단자부와 연결된 하부의 모서리가 하프 에칭되어 곡면으로 형성되며,The first lead frame has a bottom surface connected to the first terminal portion and half-etched to form a curved surface,
    상기 제2 리드 프레임은 상기 제2 단자부와 연결된 하부의 모서리가 하프 에칭되어 곡면으로 형성된 발광 다이오드 패키지.And the second lead frame has a bottom surface connected to the second terminal portion and half-etched to form a curved surface.
  18. 청구항 9에 있어서,The method of claim 9,
    상기 제1 리드 프레임 및 상기 제2 리드 프레임 중 적어도 하나의 측면에서 돌출되는 적어도 하나의 돌출부를 더 포함하며,Further comprising at least one protrusion protruding from at least one side of the first lead frame and the second lead frame,
    상기 돌출부는 상기 몸체부의 길이가 긴 측면에서 노출되는 발광 다이오드 패키지.Wherein the projecting portion is exposed on a long side of the body portion.
  19. 청구항 18에 있어서,19. The method of claim 18,
    상기 홈부는 상기 제1 실장부 또는 상기 제2 실장부와 상기 돌출부 사이에 형성된 발광 다이오드 패키지.And the groove portion is formed between the first mounting portion or the second mounting portion and the protruding portion.
  20. 청구항 18항에 있어서,The method of claim 18,
    상기 돌출부는 복수개이고, The plurality of protrusions are provided,
    상기 홈부는 상기 복수의 돌출부 사이에 형성되며,Wherein the groove portion is formed between the plurality of projections,
    상기 복수의 돌출부는 상기 홈부에 의해서 서로 이격되는 발광 다이오드 패키지.And the plurality of protrusions are spaced apart from each other by the groove.
  21. 청구항 1에 있어서,The method according to claim 1,
    상기 제1 리드 프레임 및 상기 제2 리드 프레임은,And the first lead frame and the second lead frame are connected to each other,
    상기 제1-1 접속부 또는 상기 제2-1 접속부가 상기 제1-2 접속부 또는 상기 제2-2 접속부와 연결되어 이루어지며, 상기 2-2 접속부 또는 상기 1-2 접속부와 마주하는 제1 곡면; 및The first 1-1 connection portion or the 2-1 connection portion is connected to the 1-2 connection portion or the 2-2 connection portion, and the first curved surface facing the 2-2 connection portion or the 1-2 connection portion ; And
    제1 단자부 또는 제2 단자부와 연결되어 연결되어 큰 폭을 갖는 영역과 상기 제1-2 접속부 또는 상기 제2-2 접속부와 연결되어 상대적으로 작은 폭을 갖는 영역을 연결하는 제2 곡면;을 포함하며,And a second curved surface connected to the first terminal portion or the second terminal portion to connect the region having a large width and the region having a relatively small width connected to the first or second connection portion or the second- In addition,
    상기 제2 곡면은 상기 제1 곡면보다 큰 곡률을 갖는 발광 다이오드 패키지.And the second curved surface has a larger curvature than the first curved surface.
  22. 회로 기판;A circuit board;
    도광판; 및A light guide plate; And
    상기 회로 기판 상에 실장된 청구항 1 내지 청구항 22의 어느 한 항의 발광 다이오드 패키지를 적어도 하나 포함하며,At least one light emitting diode package according to any one of claims 1 to 22 mounted on the circuit board,
    상기 발광 다이오드 패키지는 상기 도광판의 일 측면으로 광을 방출하는 발광 모듈.And the light emitting diode package emits light to one side of the light guide plate.
  23. 청구항 22에 있어서,23. The method of claim 22,
    상기 회로 기판은 상기 발광 다이오드 패키지가 배치되며 상면에 회로 패턴이 형성된 제1 영역 및 상기 제1 영역에 수직한 제2 영역을 포함하는 발광 모듈.Wherein the circuit board includes a first region in which the light emitting diode package is disposed and a circuit pattern is formed on an upper surface thereof, and a second region perpendicular to the first region.
  24. 청구항 23에 있어서,24. The method of claim 23,
    상기 발광 다이오드 패키지의 하면에 위치하는 상기 제1 접속부 및 상기 제2 접속부는 상기 회로 기판의 제1 영역의 상기 회로 기판과 접속되며,The first connection portion and the second connection portion located on the lower surface of the LED package are connected to the circuit board of the first region of the circuit board,
    상기 발광 다이오드 패키지에서 광이 방출되는 상면은 상기 도광판의 일 측면을 마주하는 발광 모듈.And an upper surface of the light emitting diode package on which light is emitted faces one side of the light guide plate.
  25. 청구항 18에 있어서,19. The method of claim 18,
    상기 제1 리드 프레임은 상기 제1 리드 프레임을 관통하는 이격 공간을 더 포함하며, Wherein the first lead frame further comprises a spaced space through the first lead frame,
    상기 이격 공간은 상기 제1 리드 프레임의 돌출부와 제1 실장부 사이에 형성된 발광 다이오드 패키지.Wherein the spacing space is formed between the projection of the first lead frame and the first mounting portion.
PCT/KR2018/013441 2017-12-19 2018-11-07 Light-emitting diode package and light-emitting module comprising same WO2019124730A1 (en)

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CN201880005501.5A CN110383513B (en) 2017-12-19 2018-11-07 Light emitting diode package and light emitting module including the same
DE212018000299.1U DE212018000299U1 (en) 2017-12-19 2018-11-07 LED housing and light emitting module with this housing
US16/818,699 US11316076B2 (en) 2017-12-19 2020-03-13 Light emitting diode package and light emitting module including the same
US17/711,452 US20220223762A1 (en) 2017-12-19 2022-04-01 Light emitting diode package and light emitting module including the same

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KR1020180133807A KR20190074200A (en) 2017-12-19 2018-11-02 Light emitting diode package and light emitting module including the sam

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KR20060069739A (en) * 2004-12-18 2006-06-22 박종만 Package for light emitting device
US20070145403A1 (en) * 2005-12-27 2007-06-28 Kabushiki Kaisha Toshiba Luminescent device and method for manufacturing the same
US9048394B2 (en) * 2013-01-29 2015-06-02 Advanced Optoelectronic Technology, Inc. Light emitting diode package with oxidation-resistant metal coating layer
KR20140132516A (en) * 2013-05-08 2014-11-18 엘지이노텍 주식회사 Light emitting device, lightr emitting module and lighting system
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