WO2019120913A1 - Semiconductor component having an opening for optical monitoring - Google Patents

Semiconductor component having an opening for optical monitoring Download PDF

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Publication number
WO2019120913A1
WO2019120913A1 PCT/EP2018/082863 EP2018082863W WO2019120913A1 WO 2019120913 A1 WO2019120913 A1 WO 2019120913A1 EP 2018082863 W EP2018082863 W EP 2018082863W WO 2019120913 A1 WO2019120913 A1 WO 2019120913A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor
opening
solder
component
semiconductor component
Prior art date
Application number
PCT/EP2018/082863
Other languages
German (de)
French (fr)
Inventor
Matthias Lausmann
Guenter Gera
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2019120913A1 publication Critical patent/WO2019120913A1/en

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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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Definitions

  • the invention relates to a semiconductor device.
  • the semiconductor device has electrical connections which are each designed for soldering to a circuit carrier.
  • the semiconductor device has a semiconductor, in particular a semiconductor chip.
  • the semiconductor component also has a connection surface, wherein a plurality of electrical connections are formed on the connection surface. The connections each have one for soldering,
  • the semiconductor component has at least one opening which extends between the contact surface and a surface of the semiconductor component which is opposite to the connection surface.
  • the breakthrough is designed such that a soldering point in the region of the terminal through the opening can be optically detected from the outside.
  • the semiconductor device has a substrate, wherein the semiconductor is connected to the substrate, in particular solder-bonded.
  • the at least one aperture is formed in the substrate.
  • the substrate is formed for example by a printed circuit board.
  • the printed circuit board preferably has an electrically insulating layer, in particular prepreg layer, and an electrically conductive layer, in particular
  • the printed circuit board is formed by a multi-layer multilayer printed circuit board having at least two electrically conductive layers and at least two electrically insulating layers.
  • DBC Direct-Bonded-Copper
  • AMB Active Metal Brazed
  • LTCC LTCC circuit carrier
  • the semiconductor device has a
  • Molded body wherein the semiconductor is embedded in the mold body.
  • the breakthrough is preferably formed in the mold body in this embodiment.
  • the semiconductor device is a caseless semiconductor, in particular bare die.
  • the breakthrough is in the
  • the semiconductor in particular semiconductor material formed.
  • the semiconductor itself can be optically controlled immediately after soldering. In case of failure, the component can be sorted out, so that further manufacturing steps can be omitted.
  • LGA land grid array
  • QFN QFN semiconductor component
  • such an electrical connection on the component itself can be visually checked for its correct soldering, in particular by a detection device.
  • the breakthrough has a
  • Breakthrough wall wherein on the breakthrough wall of the opening a metal layer is formed.
  • a metal layer is formed on the breakthrough wall of the opening.
  • Breakthrough is so advantageous wettable by solder.
  • the aperture towards the contact surface has a decreasing, preferably along a thickness extension of
  • Semiconductor device evenly decreasing diameter. More preferably, through the opening with decreasing diameter is a cone,
  • the breakthrough thus formed preferably has a trapezoidal longitudinal sectional shape.
  • the trapezoidal shape may be stepped in a variant, so that the breakthrough forms a kind of stepped pyramidal shape. This allows the solder up to at least one
  • Rising pyramid stage after which the solder flow can be stopped with decreasing capillary effect at one stage.
  • the capillary action can be formed only up to a certain longitudinal extent of the opening, so that the liquefied solder can not completely fill the opening.
  • only a certain part of the solder can be sucked out of the soldering location by means of the opening so that the soldering point can advantageously not be sucked empty.
  • Breakthrough be formed by a funnel, which on the funnel mouth, and so on Electromagnetic jets striking the soldering spot - in the manner of a
  • Concave mirror - can reflect, and so an optical inspection, in particular by an inspection device, can facilitate.
  • a breakthrough opening which points to the pad, be very small
  • the funnel mouth may have a mouth diameter between one tenth and three tenths of a millimeter, whereas the funnel opening to a top of the semiconductor device have a larger diameter can, for example, between half a millimeter and a millimeter, so that the Lotstelle can be easily detected from the outside.
  • a ratio of the opening diameter is preferably between 1: 2 and 1: 4.
  • a diameter of the opening is smaller than a thickness extension of the
  • the invention also relates to a contact arrangement with a semiconductor component according to the above-described type.
  • the contact arrangement also has a circuit carrier, which is solder-connected to the semiconductor component by means of a solder.
  • the semiconductor device has a between the
  • solder in particular the solder connection between the circuit carrier and the semiconductor component, can be detected by groping, in particular by means of a stylus tip.
  • the invention also relates to a method for detecting a solder joint.
  • electromagnetic radiation is transmitted through an opening in a component, in particular a semiconductor component, through at least as far as a connection area of the component and electromagnetic radiation reflected by the solder connection is detected.
  • a component in particular a semiconductor component
  • electromagnetic radiation reflected by the solder connection is detected.
  • Dependence of the detected reflected beams generates a quality signal that indicates the presence and / or nature of the solder connection
  • the electronic component is advantageous, in particular
  • the circuit carrier need not have any further through openings for optical control, so that a space can be saved on the circuit board and so for example is available for electronic components.
  • the opening is funnel-shaped.
  • the electromagnetic radiation is sent to a funnel mouth of the aperture where it meets a solder joint.
  • the beams reflected by the solder connection experience a beam deflection on one wall of the opening, in particular on a metal layer formed there, by further reflection.
  • the quality signal can thus be additionally generated as a function of the rays reflected at the breakthrough wall, in particular the metal layer.
  • the optical control can thus be based on a larger spot or beam spot than in the case of a cylindrical breakthrough.
  • FIG. 1 shows an exemplary embodiment of a contact arrangement 1 comprising a semiconductor component and a solder-connected to the semiconductor component
  • Circuit carrier and a method for optically detecting the solder connection by means of a detection device.
  • FIG. 1 shows an exemplary embodiment of a contact arrangement 1 and a method for optically detecting a soldering location.
  • FIG. 1 also shows a detection device 2 for detecting a
  • Lot medical which comprises a transmitter 3 for electromagnetic radiation and a receiver 4 for reflected electromagnetic radiation.
  • the detection device 2 also has a processing unit 5, in particular a microprocessor or a microcontroller, which is electrically connected on the input side to the receiver 4 and on the output side to the transmitter 3.
  • the transmitter 3 is formed, for example, by a luminescence diode or by a laser, in particular a semiconductor laser.
  • the transmitter 3 is designed to generate electromagnetic beams 36 as a function of a control signal generated by the processing unit 5 and to transmit these on the output side to an object, in this embodiment an electronic component 7, for example a semiconductor component.
  • the transmitter 3 has, for example, a light-emitting diode or a semiconductor laser.
  • Electromagnetic beams reflected by the component 7, of which an electromagnetically reflected beam 37 is shown by way of example, can be detected by the detector 4 and an image data set representing the object, in particular the component 7, or an image signal can be generated by the detector 4 which can be received by the processing unit 5.
  • the processing unit 5 is designed to detect at least one breakthrough in the image data set and to determine a reflectance for the electromagnetic radiation in the region of the detected breakthrough and
  • electromagnetic rays are, for example, infrared rays,
  • Ultraviolet rays or visible light rays A wavelength of the beams is for example between 200 nanometers and 1300 nanometers, in the visible wavelength range preferably between 400 and 800 nanometers.
  • FIG. 1 also shows a circuit carrier 9, which is solder-connected to the component 7 by means of a solder 15.
  • the circuit carrier 9 has an electrically conductive layer, in this embodiment a solder connection 12, and another solder connection 13.
  • the solder connections 12 and 13 are formed, for example, by a solder pad or by a conductor track.
  • the component 7 has a substrate, which in this exemplary embodiment comprises two prepreg layers 34 and 35 which enclose a semiconductor chip 33 between one another.
  • the semiconductor chip 33 is thus laminated between the prepreg layers 34 and 35.
  • the component 7 may have further layers in addition to the layers 34 and 35 shown in FIG.
  • the component 7 has a connection surface 40 which is connected to the
  • Circuit carrier 9 is turned around.
  • the component 7 has on the connection surface a plurality of electrical connections, of which one connection 18 and one connection 19 are shown by way of example.
  • the electrical connection 19 is designed for solder bonding to a solder pad 13 of the circuit carrier 9.
  • the Lotstelle of the terminal 19 is formed in this embodiment incorrectly, one with the Lotpad 13th
  • connection 18 is solder-connected to the solder pad 12 of the circuit carrier 9 by means of a solder 15.
  • a trained for soldering contact surface 42 of the terminal 18 faces the circuit substrate 9 and is solder-bonded with the solder 15 materially.
  • the component 7 has an opening 22, which extends from a side opposite the connection surface 40 along a thickness extension 30 of the component 7 through to the contact surface 43 of the connection 19.
  • the defective Lotstelle can through the opening 22, which in this Embodiment is cylindrical, are optically detected, for example, by the detection device. 2
  • the component 7 also has an opening 21 which extends from the side of the component 7 opposite the connection surface 40 to the contact surface 42 and through the electrical connection 18, so that the solder 15 can be sucked into the opening 21 by means of a capillary effect and there as in the opening 21 solidified solder 15 'can be detected by the detection device 2.
  • the transmitter 3 an electromagnetic beam, in particular the
  • the detection device 2 has in this embodiment, an image display unit 6, in particular a display, which
  • Input side is connected to the processing unit 5.
  • Detection device 2 shows in the display the part of the component 7 representing data set, the connection, in particular a
  • the processing unit 5 is formed in the image data set the solidified solder 15 '- for example, depending on a
  • Reflection value for the electromagnetic radiation 36 - to detect and reproduce the detection result by means of the image display unit 6 visible.
  • the detection device 2 has the soldering point in the region of the connection 18, in particular a rim 41 of the opening 21, which encloses in a view of the component 7 the solidified in the opening 21 solder 15 ', by means of the beam 36 and in dependence of the reflected beam 36th ' detected.
  • the detection device 2, in particular the image display unit 6, in this embodiment exemplifies the breakthrough edge 4T and the solidified solder 15 ".
  • the electrical connection 18 is in this embodiment by means of an electrically conductive via connection, which is formed by a formed on an inner wall of the opening 21 metal layer 24 or metal sleeve, with the opposite surface of the pad 40 of the device 7 and there connected to an electrically conductive layer 28.
  • the metal layer is, for example, a copper layer, a tin layer, a silver layer or a gold layer.
  • the electrically conductive layer 28 encloses the opening 21 and is formed in this embodiment by a conductor track. The electrically conductive layer 28 thus connects the electrical connection 18 with the side of the component 7 opposite the connection surface 40 and is electrically connected to the semiconductor chip 33 by means of at least one or more micro-via connections.
  • Both the breakthrough 21, as well as the breakthrough 22 and openings for the micro-via connections such as the exemplified micro via 38, and another exemplified micro via 39, which by means of another electrically conductive layer and a metallization of the Breakthrough 22 is connected to the terminal 19 can, for example, by means of laser drilling or by means
  • micro via's such as the micro via 38 and the micro via 39, each have a diameter of, for example
  • the breakthrough 21 has, for example, a diameter between 0.1 millimeter and one millimeter.
  • the semiconductor component 7 can also have further microvias which are arranged on a side of the semiconductor 33 facing away from the microvias 38 and 39 and electrically connect, for example, the semiconductor 33 to the circuit carrier 9, for example via a Other with the electrical connection 18 and / or with the electrical connection 19 other conductive layer, comparable to the aforementioned conductive layer 28. Basically, then in a fault-free solder connection of the electrical connections 18 and 19 with the circuit substrate 9 and the semiconductor 33 with electrically the
  • Circuit substrate 9 connected due to the previously described existing electrical connection of the electrical connections 18 and / or 19 with the semiconductor 33 by means of one of the above-mentioned electrically conductive layers and the micro vias 39, 39th
  • the metal layer 24 on the inner wall of the aperture 21 may be formed, for example, by electroplating in a common plating step to create the micro via. That way that can
  • FIG. 1 also shows a component 8 which is shown in sections and which, like the component 7, may have a semiconductor component in the interior or on a surface of the component 8.
  • the component 8 has an opening 20, which in this case
  • Embodiment to an electrical connection 17 tapers toward, and is funnel-shaped or truncated cone shaped.
  • the opening 20 can be produced, for example, by means of laser drilling and by means of circular movements of a laser beam during laser drilling in the component 8.
  • the electrical connection 17 is in this embodiment by means of a solder 16 with an electrically conductive layer 1 1, in particular a solder pad of a circuit substrate 10, solder-connected.
  • the solder 16 could be sucked into the breakthrough 20 in a liquefied form.
  • the opening 20 is flared funnel-shaped to a side 17 of the component 8 opposite the connection 17, so that the capillary effect, which sucks the liquefied solder into the opening 20, is effective only up to a longitudinal section 29 of the opening 20.
  • only a predetermined part of the soldering agent 16 can thus be removed from the soldering point.
  • the aperture 20 has on an inner wall on a metal layer 23 which is formed reflective in this embodiment.
  • the metal layer 23 can thus form an electrically conductive via connection, which connects a conductor track of the component 8 to the electrical connection 17.
  • the metal layer 23 may additionally advantageously a reflector for the
  • electromagnetic radiation for example the electromagnetic beam 36, generated by the transmitter 3, whereby a detection of the correct solder connection, in particular a detection of the solidified in the opening 20 solder 16 'can be facilitated by means of the detection device 2.
  • the opening 20 has, in the region of the connection 17, a smaller diameter 31 than a diameter 32 at a funnel opening, formed by a breakthrough edge 26 on a surface of the device 8, which is opposite to the electrical connection 17.
  • Electromagnetic beams for detecting the solidified solder 16 ' can thus easily enter the opening 20 from mutually different angles of incidence and from the solidified one
  • Solder 16 'reflected beams 36' can easily escape from the opening 20 again and additionally be reflected on the metal layer 23 on the inner wall, which causes a good optical detectability of the solidified solder 16 '.
  • the diameter 32 of the opening 20 of the opposite side to the electrical connection 17 has a smaller dimension than a
  • Thickness extension 30 of the device 8 which is penetrated by the opening 20.
  • Figure 1 also shows - shown in phantom - a variant of the device 7, wherein the opening 21 is funnel-shaped, which is represented by the dashed lines shown breakthrough wall 25, which extends from the electrical connection 18 to a breakthrough edge 27 of the funnel-shaped
  • the image display unit 6 also shows - shown in dashed lines - the variant of the component 7 with the funnel-shaped opening 25, wherein the breakthrough edge 27 'is reproduced by way of example.
  • the trace 28 is shown by the image display unit as reproduced trace 28 '.

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Abstract

The invention relates to a semiconductor component. The semiconductor component comprises electrical connections which are each designed for soldering to a circuit carrier. The semiconductor component has a semiconductor, in particular a semiconductor chip. The semiconductor component also has a connection surface, wherein a plurality of electrical connections are formed on the connection surface. The connections each have a contact surface designed for soldering, in particular reflow soldering. According to the invention, the semiconductor component has at least one opening, which extends between the contact surface and a surface of the semiconductor component opposite the connection surface. The opening is designed in such a way that a soldering joint in the region of the connection can be optically recorded from outside through the opening.

Description

Beschreibung  description
Titel title
Halbleiterbauteil mit einem Durchbruch zur optischen Kontrolle Semiconductor device with a breakthrough for optical control
Stand der Technik State of the art
Die Erfindung betrifft ein Halbleiterbauteil. Das Halbleiterbauteil weist elektrische Anschlüsse auf, welche jeweils zum Verlöten mit einem Schaltungsträger ausgebildet sind. Das Halbleiterbauteil weist einen Halbleiter, insbesondere einen Halbleiter-Chip, auf. Das Halbleiterbauteil weist auch eine Anschlussfläche auf, wobei an der Anschlussfläche eine Mehrzahl elektrischer Anschlüsse ausgebildet sind. Die Anschlüsse weisen jeweils eine zum Verlöten, The invention relates to a semiconductor device. The semiconductor device has electrical connections which are each designed for soldering to a circuit carrier. The semiconductor device has a semiconductor, in particular a semiconductor chip. The semiconductor component also has a connection surface, wherein a plurality of electrical connections are formed on the connection surface. The connections each have one for soldering,
insbesondere Reflow-Verlöten ausgebildete Kontaktfläche auf. in particular reflow soldering formed contact surface.
Aus der JP1 1 121648A ist ein BGA-Halbleiterbauteil bekannt, welches mit einer Leiterplatte verlötet werden kann, wobei die Leiterplatte wenigstens ein From JP1 1 121648A a BGA semiconductor device is known, which can be soldered to a circuit board, wherein the circuit board at least one
Durchgangsloch aufweist, welches mit einer Position eines zweiten elektrischen Anschlusses übereinstimmt, sodass ein geschmolzener Zustand eines elektrischen Verbindungsmittels durch das Durchgangsloch von einer Rückseite der Leiterplatte bestätigt werden kann. Through hole having a position of a second electrical connection matches, so that a molten state of an electrical connection means can be confirmed through the through hole from a back of the circuit board.
Offenbarung der Erfindung Disclosure of the invention
Erfindungsgemäß weist das Halbleiterbauteil wenigstens einen Durchbruch auf, welcher sich zwischen der Kontaktfläche und einer zur Anschlussfläche gegenüberliegenden Oberfläche des Halbleiterbauteils erstreckt. Der Durchbruch ist derart ausgebildet, dass eine Lotstelle im Bereich des Anschlusses durch den Durchbruch hindurch von außen optisch erfasst werden kann. Dadurch kann das Halbleiterbauteil vorteilhaft selbst einer automatisierten optischen Kontrolle, auch AOI-lnspektion (AOI = Automatische-Optische- Inspektion) genannt, unterzogen werden. According to the invention, the semiconductor component has at least one opening which extends between the contact surface and a surface of the semiconductor component which is opposite to the connection surface. The breakthrough is designed such that a soldering point in the region of the terminal through the opening can be optically detected from the outside. As a result, the semiconductor device itself can advantageously undergo an automatic optical control, also called AOI inspection (AOI = Automatic Optical Inspection).
In einer bevorzugten Ausführungsform weist das Halbleiterbauteil ein Substrat auf, wobei der Halbleiter mit dem Substrat verbunden ist, insbesondere lötverbunden ist. Bevorzugt ist der wenigstens eine Durchbruch in dem Substrat ausgebildet. Das Substrat ist beispielsweise durch eine Leiterplatte gebildet. Die Leiterplatte weist bevorzugt eine elektrisch isolierende Schicht, insbesondere Prepreg-Schicht und eine elektrisch leitfähige Schicht, insbesondere In a preferred embodiment, the semiconductor device has a substrate, wherein the semiconductor is connected to the substrate, in particular solder-bonded. Preferably, the at least one aperture is formed in the substrate. The substrate is formed for example by a printed circuit board. The printed circuit board preferably has an electrically insulating layer, in particular prepreg layer, and an electrically conductive layer, in particular
Kupferschicht auf. Die Leiterplatte ist in einer anderen Ausführungsform durch eine mehrschichtig ausgebildete Multilayer-Leiterplatte mit wenigstens zwei elektrisch leitfähigen Schichten und wenigstens zwei elektrisch isolierenden Schichten gebildet. Das Substrat kann in einer anderen Ausführungsform ein keramischer Schaltungsträger sein, beispielsweise ein DBC-Schaltungsträger (DBC = Direct-Bonded-Copper), ein AMB-Schaltungsträger (AMB = Active-Metal- Brazed), ein LTCC-Schaltungsträger (LTCC = Low-Temperature-Cofired- Ceramics) oder ein HTCC-Schaltungsträger (HTCC = High-Temperature-Cofired- Ceramics) oder ein IMS-Substrat (IMS = Insulated-Metal-Substrate). Copper layer on. In another embodiment, the printed circuit board is formed by a multi-layer multilayer printed circuit board having at least two electrically conductive layers and at least two electrically insulating layers. In another embodiment, the substrate may be a ceramic circuit carrier, for example a DBC circuit carrier (DBC = Direct-Bonded-Copper), an AMB circuit carrier (AMB = Active Metal Brazed), an LTCC circuit carrier (LTCC). Temperature-Cofired-Ceramics) or an HTCC-circuit carrier (HTCC = High-Temperature-Cofired-Ceramics) or an IMS-substrate (IMS = Insulated-Metal-Substrates).
In einer bevorzugten Ausführungsform weist das Halbleiterbauteil einen In a preferred embodiment, the semiconductor device has a
Moldkörper auf, wobei der Halbleiter in den Moldkörper eingebettet ist. Der Durchbruch ist in dieser Ausführungsform bevorzugt in dem Moldkörper ausgebildet. Vorteilhaft kann eine Kontrolle der Lotverbindung an dem Molded body, wherein the semiconductor is embedded in the mold body. The breakthrough is preferably formed in the mold body in this embodiment. Advantageously, a control of the solder joint on the
Halbleiterbauteil selbst durch den Moldkörper hindurch erfolgen, so dass das Halbleiterbauteil selbst bereits ein Kontrollmittel zur Lotstellenkontrolle aufweist. Semiconductor component itself through the mold body through, so that the semiconductor device itself already has a control means for Lotstellenkontrolle.
In einer bevorzugten Ausführungsform ist das Halbleiterbauteil ein gehäuseloser Halbleiter, insbesondere Bare-Die. Bevorzugt ist der Durchbruch in dem In a preferred embodiment, the semiconductor device is a caseless semiconductor, in particular bare die. Preferably, the breakthrough is in the
Halbleiter, insbesondere Halbleitermaterial ausgebildet. Vorteilhaft kann so der Halbleiter selbst unmittelbar nach dem Verlöten optisch kontrolliert werden. Im Fehlerfall kann das Bauteil aussortiert werden, so dass weitere Fertigungsschritte entfallen können. Das Halbleiterbauteil ist in einer bevorzugten Ausführungsform ein LGA-Bauteil (LGA = Land-Grid-Array), oder ein QFN-Halbleiterbauteil (QFN) = Quad-Flat-No- leads). Vorteilhaft kann so ein elektrischer Anschluss am Bauteil selbst auf seine korrekte Verlötung hin insbesondere durch eine Erfassungsvorrichtung, optisch überprüft werden. Semiconductor, in particular semiconductor material formed. Advantageously, the semiconductor itself can be optically controlled immediately after soldering. In case of failure, the component can be sorted out, so that further manufacturing steps can be omitted. In a preferred embodiment, the semiconductor component is an LGA component (LGA = land grid array), or a QFN semiconductor component (QFN) = quad-flat no-leads). Advantageously, such an electrical connection on the component itself can be visually checked for its correct soldering, in particular by a detection device.
In einer bevorzugten Ausführungsform weist der Durchbruch eine In a preferred embodiment, the breakthrough has a
Durchbruchwand auf, wobei an der Durchbruchwand des Durchbruchs eine Metallschicht ausgebildet ist. Vorteilhaft kann in dem Durchbruch so verflüssigtes Lotmittel leicht in den Durchbruch - insbesondere durch Kapillarwirkung einer durch den Durchbruch gebildeten Kapillare - hineingezogen werden. Der Breakthrough wall, wherein on the breakthrough wall of the opening a metal layer is formed. Advantageously, in the breakthrough so liquefied solder easily in the breakthrough - especially by capillary action of a capillary formed by the breakthrough - be drawn. The
Durchbruch ist so vorteilhaft von Lotmittel benetzbar ausgebildet. Breakthrough is so advantageous wettable by solder.
In einer bevorzugten Ausführungsform weist der Durchbruch zur Kontaktfläche hin einen abnehmenden, bevorzugt entlang einer Dickenerstreckung des In a preferred embodiment, the aperture towards the contact surface has a decreasing, preferably along a thickness extension of
Halbleiterbauteils gleichmäßig abnehmenden Durchmesser auf. Weiter bevorzugt ist durch den Durchbruch mit abnehmendem Durchmesser ein Kegel, Semiconductor device evenly decreasing diameter. More preferably, through the opening with decreasing diameter is a cone,
insbesondere Spitzkegel, gebildet. Der so ausgebildete Durchbruch weist bevorzugt eine trapezförmige Längsschnittform auf. Die Trapezform kann in einer Variante gestuft ausgebildet sein, so dass der Durchbruch eine Art gestufte Pyramidenform bildet. Dadurch kann das Lot bis zu wenigstens einer in particular pointed cone, formed. The breakthrough thus formed preferably has a trapezoidal longitudinal sectional shape. The trapezoidal shape may be stepped in a variant, so that the breakthrough forms a kind of stepped pyramidal shape. This allows the solder up to at least one
Pyramidenstufe aufsteigen, wonach der Lotfluss mit abnehmenden Kapillareffekt bei einer Stufe gestoppt werden kann. Dadurch kann vorteilhaft eine optische Kontrolle bei einer so vorbestimmten Lotfüllung im Durchbruch erleichtert werden. Rising pyramid stage, after which the solder flow can be stopped with decreasing capillary effect at one stage. As a result, it is advantageously possible to facilitate an optical check in the case of a so-predetermined solder filling in the breakthrough.
Vorteilhaft kann mittels eines so ausgebildeten Durchbruchs die Kapillarwirkung nur bis zu einer bestimmten Längenerstreckung des Durchbruchs ausgebildet sein, sodass das verflüssigte Lotmittel den Durchbruch nicht vollständig ausfüllen kann. Vorteilhaft kann so nur ein bestimmter Teil des Lotmittels von der Lotstelle mittels des Durchbruchs abgesaugt werden, sodass die Lotstelle vorteilhaft nicht leergesaugt werden kann. Advantageously, by means of an aperture formed in this way, the capillary action can be formed only up to a certain longitudinal extent of the opening, so that the liquefied solder can not completely fill the opening. Advantageously, only a certain part of the solder can be sucked out of the soldering location by means of the opening so that the soldering point can advantageously not be sucked empty.
Weiter vorteilhaft kann durch den so ausgebildeten, konisch geformten Further advantageously, by the thus formed, conically shaped
Durchbruch ein Trichter gebildet sein, welcher auf die Trichtermündung, und so auf die Lotstelle treffende elektromagnetische Strahlen - nach Art eines Breakthrough be formed by a funnel, which on the funnel mouth, and so on Electromagnetic jets striking the soldering spot - in the manner of a
Hohlspiegels - reflektieren kann, und so eine optische Inspektion, insbesondere durch eine Inspektionsvorrichtung, erleichtern kann. Concave mirror - can reflect, and so an optical inspection, in particular by an inspection device, can facilitate.
Es wurde nämlich erkannt, dass die Lotstelle mittels des so gebildeten Trichters, insbesondere Spiegeltrichters, aus zueinander verschiedenen  It was in fact recognized that the soldering point by means of the funnel thus formed, in particular Spiegeltrichters, from each other
Betrachtungswinkeln her leicht erfasst werden kann. Vorteilhaft kann nämlich mit der so gebildeten Ausführungsform des Durchbruchs eine Durchbruchöffnung, welche zur Anschlussfläche hinweist, sehr klein sein, beispielsweise kann die Trichtermündung einen Mündungsdurchmesser zwischen einem Zehntel und drei Zehntel Millimetern aufweisen, wogegen die Trichteröffnung zu einer Oberseite des Halbleiterbauteils hin einen größeren Durchmesser aufweisen kann, beispielsweise zwischen einem halben Millimeter und einem Millimeter, sodass die Lotstelle leicht von außen her erfasst werden kann. Bevorzugt beträgt ein Verhältnis der Öffnungsdurchmesser zwischen 1 :2 und 1 :4. Viewing angle ago can be easily detected. Advantageously, namely with the thus formed embodiment of the aperture, a breakthrough opening, which points to the pad, be very small, for example, the funnel mouth may have a mouth diameter between one tenth and three tenths of a millimeter, whereas the funnel opening to a top of the semiconductor device have a larger diameter can, for example, between half a millimeter and a millimeter, so that the Lotstelle can be easily detected from the outside. A ratio of the opening diameter is preferably between 1: 2 and 1: 4.
In einer bevorzugten Ausführungsform des Halbleiterbauteils ist ein Durchmesser des Durchbruchs kleiner ausgebildet als eine Dickenerstreckung des In a preferred embodiment of the semiconductor device, a diameter of the opening is smaller than a thickness extension of the
Schaltungsträgers. Vorteilhaft kann so eine hohe Anschlussdichte von Circuit carrier. Advantageously, such a high connection density of
zueinander benachbart angeordneten Anschlüssen gebildet sein. be formed adjacent to each other arranged terminals.
Die Erfindung betrifft auch eine Kontaktanordnung mit einem Halbleiterbauteil gemäß der vorbeschriebenen Art. Die Kontaktanordnung weist dabei auch einen Schaltungsträger auf, welcher mit dem Halbleiterbauteil mittels eines Lotmittels lötverbunden ist. Das Halbleiterbauteil weist eine sich zwischen dem The invention also relates to a contact arrangement with a semiconductor component according to the above-described type. The contact arrangement also has a circuit carrier, which is solder-connected to the semiconductor component by means of a solder. The semiconductor device has a between the
Schaltungsträger und dem Halbleiterbauteil erstreckende Lotverbindung auf, welche durch den Durchbruch hindurch insbesondere optisch erfasst werden kann. In einer anderen Ausführungsform kann das Lotmittel, insbesondere die Lotverbindung zwischen dem Schaltungsträger und dem Halbleiterbauteil, tastend, insbesondere mittels einer Tastspitze, erfasst werden. Circuit substrate and the semiconductor device extending solder connection, which can be detected by the breakthrough in particular optically. In another embodiment, the solder, in particular the solder connection between the circuit carrier and the semiconductor component, can be detected by groping, in particular by means of a stylus tip.
Die Erfindung betrifft auch ein Verfahren zum Erfassen einer Lotverbindung.The invention also relates to a method for detecting a solder joint.
Bei dem Verfahren werden elektromagnetische Strahlen durch einen Durchbruch in einem Bauteil, insbesondere Halbleiterbauteil, hindurch wenigstens bis hin zu einer Anschlussfläche des Bauteils gesendet und von der Lotverbindung reflektierte elektromagnetische Strahlen erfasst. Weiter wird bei dem Verfahren in Abhängigkeit der erfassten reflektierten Strahlen ein Qualitätssignal erzeugt, das ein Vorhandensein und/oder eine Beschaffenheit der Lotverbindung In the method, electromagnetic radiation is transmitted through an opening in a component, in particular a semiconductor component, through at least as far as a connection area of the component and electromagnetic radiation reflected by the solder connection is detected. Next is in the process in Dependence of the detected reflected beams generates a quality signal that indicates the presence and / or nature of the solder connection
repräsentiert. Vorteilhaft ist das elektronische Bauteil, insbesondere represents. The electronic component is advantageous, in particular
Halbleiterbauteil so auf eine optische Verbindungskontrolle bereits vorbereitet. Vorteilhaft braucht der Schaltungsträger so keine weiteren Durchgangsöffnungen zur optischen Kontrolle aufweisen, so dass ein Platz auf dem Schaltungsträger eingespart werden kann und so beispielsweise für elektronische Komponenten zur Verfügung steht. Semiconductor component already prepared for optical connection control. Advantageously, the circuit carrier need not have any further through openings for optical control, so that a space can be saved on the circuit board and so for example is available for electronic components.
In einer bevorzugten Variante des Verfahrens ist der Durchbruch trichterförmig ausgebildet. Die elektromagnetischen Strahlen werden auf eine Trichtermündung des Durchbruchs gesendet und treffen dort auf eine Lotverbindung. Die von der Lotverbindung reflektierten Strahlen erfahren an einer Wand des Durchbruchs, insbesondere an einer dort ausgebildeten Metallschicht, durch weitere Reflexion eine Strahlumlenkung. Das Qualitätssignal kann so zusätzlich in Abhängigkeit der an der Durchbruchwand, insbesondere der Metallschicht, reflektierten Strahlen erzeugt werden. Die optische Kontrolle kann so basierend auf einem größeren Leuchtfleck oder Strahlenfleck erfolgen als bei zylinderförmigem Durchbruch. In a preferred variant of the method, the opening is funnel-shaped. The electromagnetic radiation is sent to a funnel mouth of the aperture where it meets a solder joint. The beams reflected by the solder connection experience a beam deflection on one wall of the opening, in particular on a metal layer formed there, by further reflection. The quality signal can thus be additionally generated as a function of the rays reflected at the breakthrough wall, in particular the metal layer. The optical control can thus be based on a larger spot or beam spot than in the case of a cylindrical breakthrough.
Die Erfindung wird nun im Folgenden anhand von Figuren und weiteren The invention will now be described below with reference to figures and others
Ausführungsbeispielen beschrieben. Weitere vorteilhafte Ausführungsvarianten ergeben sich aus einer Kombination der in den abhängigen Ansprüchen und den in den Figuren beschriebenen Merkmalen. Embodiments described. Further advantageous embodiments result from a combination of the features described in the dependent claims and in the figures.
Figur 1 zeigt ein Ausführungsbeispiel für eine Kontaktanordnung 1 umfassend ein Halbleiterbauteil und einen mit dem Halbleiterbauteil lotverbundenen FIG. 1 shows an exemplary embodiment of a contact arrangement 1 comprising a semiconductor component and a solder-connected to the semiconductor component
Schaltungsträger und ein Verfahren zum optischen Erfassen der Lotverbindung mittels einer Erfassungsvorrichtung. Circuit carrier and a method for optically detecting the solder connection by means of a detection device.
Figur 1 zeigt ein Ausführungsbeispiel für eine Kontaktanordnung 1 und ein Verfahren zum optischen Erfassen einer Lotstelle. FIG. 1 shows an exemplary embodiment of a contact arrangement 1 and a method for optically detecting a soldering location.
Figur 1 zeigt auch eine Erfassungsvorrichtung 2 zum Erfassen einer FIG. 1 also shows a detection device 2 for detecting a
Lotverbindung, welche einen Sender 3 für elektromagnetische Strahlen und einen Empfänger 4 für reflektierte elektromagnetische Strahlen aufweist. Die Erfassungsvorrichtung 2 weist auch eine Verarbeitungseinheit 5, insbesondere einen Mikroprozessor oder einen Mikrocontroller, auf, welche eingangsseitig mit dem Empfänger 4 und ausgangsseitig mit dem Sender 3 elektrisch verbunden ist. Der Empfänger 4 ist beispielsweise durch einen CCD-Detektor (CCD = Charge-Coupled-Device) gebildet. Der Sender 3 ist beispielsweise durch eine Lumineszenz-Diode oder durch einen Laser, insbesondere Halbleiter-Laser, gebildet. Lotverbindung, which comprises a transmitter 3 for electromagnetic radiation and a receiver 4 for reflected electromagnetic radiation. The detection device 2 also has a processing unit 5, in particular a microprocessor or a microcontroller, which is electrically connected on the input side to the receiver 4 and on the output side to the transmitter 3. The receiver 4 is formed for example by a CCD detector (CCD = charge-coupled device). The transmitter 3 is formed, for example, by a luminescence diode or by a laser, in particular a semiconductor laser.
Der Sender 3 ist ausgebildet, in Abhängigkeit eines von der Verarbeitungseinheit 5 erzeugten Steuersignals elektromagnetische Strahlen 36 zu erzeugen und diese ausgangsseitig auf ein Objekt, in diesem Ausführungsbeispiel ein elektronisches Bauelement 7, beispielsweise ein Halbleiter-Bauelement, zu senden. Der Sender 3 weist beispielsweise eine Lumineszenzdiode oder einen Halbleiterlaser auf. Von dem Bauelement 7 reflektierte elektromagnetische Strahlen, von denen ein elektromagnetisch reflektierter Strahl 37 beispielhaft gezeigt ist, können von dem Detektor 4 erfasst werden und von dem Detektor 4 ein das Objekt, insbesondere das Bauteil 7, repräsentierender Bilddatensatz oder ein Bildsignal erzeugt werden, welcher beziehungsweise welches von der Verarbeitungseinheit 5 empfangen werden kann. The transmitter 3 is designed to generate electromagnetic beams 36 as a function of a control signal generated by the processing unit 5 and to transmit these on the output side to an object, in this embodiment an electronic component 7, for example a semiconductor component. The transmitter 3 has, for example, a light-emitting diode or a semiconductor laser. Electromagnetic beams reflected by the component 7, of which an electromagnetically reflected beam 37 is shown by way of example, can be detected by the detector 4 and an image data set representing the object, in particular the component 7, or an image signal can be generated by the detector 4 which can be received by the processing unit 5.
Die Verarbeitungseinheit 5 ist ausgebildet, in dem Bilddatensatz wenigstens einen Durchbruch zu erfassen und im Bereich des erfassten Durchbruchs einen Reflexionsgrad für die elektromagnetischen Strahlen zu ermitteln und in The processing unit 5 is designed to detect at least one breakthrough in the image data set and to determine a reflectance for the electromagnetic radiation in the region of the detected breakthrough and
Abhängigkeit des Reflexionsgrades, insbesondere einer Strahlstärke der reflektierten Strahlen, ein Ausgangssignal zu erzeugen, welches eine Qualität einer Lotverbindung im Bereich des Durchbruchs entspricht. Die Dependence of the reflectance, in particular a beam intensity of the reflected beams, to produce an output signal which corresponds to a quality of a solder connection in the region of the aperture. The
elektromagnetischen Strahlen sind beispielsweise Infrarotstrahlen, electromagnetic rays are, for example, infrared rays,
Ultraviolettstrahlen oder sichtbare Lichtstrahlen. Eine Wellenlänge der Strahlen beträgt beispielsweise zwischen 200 Nanometer und 1300 Nanometer, im sichtbaren Wellenlängenbereich bevorzugt zwischen 400 und 800 Nanometer. Ultraviolet rays or visible light rays. A wavelength of the beams is for example between 200 nanometers and 1300 nanometers, in the visible wavelength range preferably between 400 and 800 nanometers.
Figur 1 zeigt auch einen Schaltungsträger 9, welcher mit dem Bauelement 7 mittels eines Lotmittels 15 lotverbunden ist. Der Schaltungsträger 9 weist eine elektrisch leitfähige Schicht, in diesem Ausführungsbeispiel einen Lotanschluss 12, und einen weiteren Lotanschluss 13 auf. Die Lotanschlüsse 12 und 13 sind beispielsweise durch ein Lotpad oder durch eine Leiterbahn gebildet. FIG. 1 also shows a circuit carrier 9, which is solder-connected to the component 7 by means of a solder 15. The circuit carrier 9 has an electrically conductive layer, in this embodiment a solder connection 12, and another solder connection 13. The solder connections 12 and 13 are formed, for example, by a solder pad or by a conductor track.
Das Bauelement 7 weist in diesem Ausführungsbeispiel ein Substrat auf, welches in diesem Ausführungsbeispiel zwei Prepreg-Schichten 34 und 35 umfasst, welche einen Halbleiter-Chip 33 zwischeneinander einschließen. Der Halbleiter-Chip 33 ist so zwischen die Prepreg-Schichten 34 und 35 einlaminiert. Das Bauteil 7 kann neben den in Figur 1 dargestellten Schichten 34 und 35 noch weitere Schichten aufweisen. Das Bauteil 7 kann beispielsweise durch ein SiP (SiP = System-In-Package) gebildet sein, ein BGA-Bauteil oder ein LGA-Bauteil. In this exemplary embodiment, the component 7 has a substrate, which in this exemplary embodiment comprises two prepreg layers 34 and 35 which enclose a semiconductor chip 33 between one another. The semiconductor chip 33 is thus laminated between the prepreg layers 34 and 35. The component 7 may have further layers in addition to the layers 34 and 35 shown in FIG. The component 7 can be formed, for example, by a SiP (SiP = system-in-package), a BGA component or an LGA component.
Das Bauteil 7 weist eine Anschlussfläche 40 auf, welche zu dem The component 7 has a connection surface 40 which is connected to the
Schaltungsträger 9 hingewandt ist. Das Bauteil 7 weist an der Anschlussfläche eine Mehrzahl von elektrischen Anschlüssen auf, von denen ein Anschluss 18 und ein Anschluss 19 beispielhaft dargestellt sind. Circuit carrier 9 is turned around. The component 7 has on the connection surface a plurality of electrical connections, of which one connection 18 and one connection 19 are shown by way of example.
Der Anschluss 18, welcher in diesem Ausführungsbeispiel durch eine elektrisch leitfähige Schicht, insbesondere Kupferschicht, gebildet ist, weist eine The terminal 18, which is formed in this embodiment by an electrically conductive layer, in particular copper layer, has a
Kontaktfläche 41 zum Lötverbinden mit dem Lotpad 12 des Schaltungsträgers 9 auf. Der elektrische Anschluss 19 ist zum Lötverbinden mit einem Lotpad 13 des Schaltungsträgers 9 ausgebildet. Die Lotstelle des Anschlusses 19 ist in diesem Ausführungsbeispiel fehlerhaft ausgebildet, ein mit dem Lotpad 13 Contact surface 41 for Lötverbinden with the solder pad 12 of the circuit substrate 9 on. The electrical connection 19 is designed for solder bonding to a solder pad 13 of the circuit carrier 9. The Lotstelle of the terminal 19 is formed in this embodiment incorrectly, one with the Lotpad 13th
verschmolzenes Lotmittel 14 kontaktiert dabei den Anschluss 19 nicht, sodass sich zwischen dem Lotmittel 14 und dem Anschluss 19 ein Spalt erstreckt. fused solder 14 does not contact the terminal 19, so that a gap extends between the solder 14 and the terminal 19.
Der elektrische Anschluss 18 ist - anders als der Anschluss 19 - mittels eines Lotmittels 15 mit dem Lotpad 12 des Schaltungsträgers 9 lotverbunden. Eine zum Verlöten ausgebildete Kontaktfläche 42 des Anschlusses 18 weist zum Schaltungsträger 9 hin und ist mit dem Lotmittel 15 stoffschlüssig lotverbunden. Unlike the connection 19, the electrical connection 18 is solder-connected to the solder pad 12 of the circuit carrier 9 by means of a solder 15. A trained for soldering contact surface 42 of the terminal 18 faces the circuit substrate 9 and is solder-bonded with the solder 15 materially.
Das Bauelement 7 weist einen Durchbruch 22 auf, welcher sich von einer zur Anschlussfläche 40 entgegengesetzten Seite entlang einer Dickenerstreckung 30 des Bauelements 7 hindurch bis zur Kontaktfläche 43 des Anschlusses 19 erstreckt. Die defekte Lotstelle kann durch den Durchbruch 22, welcher in diesem Ausführungsbeispiel zylinderförmig ausgebildet ist, optisch erfasst werden, beispielsweise durch die Erfassungsvorrichtung 2. The component 7 has an opening 22, which extends from a side opposite the connection surface 40 along a thickness extension 30 of the component 7 through to the contact surface 43 of the connection 19. The defective Lotstelle can through the opening 22, which in this Embodiment is cylindrical, are optically detected, for example, by the detection device. 2
Das Bauelement 7 weist auch einen Durchbruch 21 auf, welcher sich von der zur Anschlussfläche 40 entgegengesetzten Seite des Bauelements 7 bis hin zur Kontaktfläche 42 und durch den elektrischen Anschluss 18 hindurch erstreckt, sodass das Lotmittel 15 in den Durchbruch 21 mittels eines Kapillareffekts hineingesaugt werden kann und dort als in dem Durchbruch 21 erstarrtes Lotmittel 15‘ von der Erfassungsvorrichtung 2 erfasst werden kann. Dazu kann der Sender 3 einen elektromagnetischen Strahl, insbesondere den The component 7 also has an opening 21 which extends from the side of the component 7 opposite the connection surface 40 to the contact surface 42 and through the electrical connection 18, so that the solder 15 can be sucked into the opening 21 by means of a capillary effect and there as in the opening 21 solidified solder 15 'can be detected by the detection device 2. For this purpose, the transmitter 3, an electromagnetic beam, in particular the
elektromagnetischen Strahl 36, durch den Durchbruch 21 senden, welcher dort auf das erstarrte Lotmittel 15‘ treffen kann. Ein von dem erstarrten Lotmittel 15‘ reflektierter elektromagnetischer Strahl 36‘ kann dann von dem Detektor 4 erfasst werden. Die Erfassungsvorrichtung 2 weist in diesem Ausführungsbeispiel auch eine Bildwiedergabeeinheit 6, insbesondere ein Display auf, welches electromagnetic beam 36, send through the opening 21, which there can meet the solidified solder 15 '. An electromagnetic beam 36 'reflected by the solidified solder 15' can then be detected by the detector 4. The detection device 2 has in this embodiment, an image display unit 6, in particular a display, which
eingangsseitig mit der Verarbeitungseinheit 5 verbunden ist. Die Input side is connected to the processing unit 5. The
Erfassungsvorrichtung 2 zeigt in dem Display den Teil des das Bauelement 7 repräsentierenden Datensatzes, der den Anschluss, insbesondere einen Detection device 2 shows in the display the part of the component 7 representing data set, the connection, in particular a
Oberflächenbereich des Bauelements 7, im Bereich des Durchbruchs 21 repräsentiert. Die Verarbeitungseinheit 5 ist ausgebildet, in dem Bilddatensatz das erstarrte Lotmittel 15‘ - beispielsweise in Abhängigkeit eines Surface region of the device 7, represented in the region of the opening 21. The processing unit 5 is formed in the image data set the solidified solder 15 '- for example, depending on a
Reflexionswertes für die elektromagnetischen Strahlen 36 - zu erfassen und das Erfassungsergebnis mittels der Bildwiedergabeeinheit 6 sichtbar wiederzugeben.Reflection value for the electromagnetic radiation 36 - to detect and reproduce the detection result by means of the image display unit 6 visible.
Die Erfassungsvorrichtung 2 hat die Lotstelle im Bereich des Anschlusses 18, insbesondere einen Rand 41 des Durchbruchs 21 , welcher in einer Aufsicht auf das Bauteil 7 das in dem Durchbruch 21 erstarrte Lotmittel 15‘ umschließt, mittels des Strahls 36 und in Abhängigkeit des reflektierten Strahls 36’ erfasst. Die Erfassungsvorrichtung 2, insbesondere die Bildwiedergabeeinheit 6, gibt in diesem Ausführungsbeispiel den Durchbruchrand 4T, und das erstarrte Lotmittel 15“ beispielhaft wieder. The detection device 2 has the soldering point in the region of the connection 18, in particular a rim 41 of the opening 21, which encloses in a view of the component 7 the solidified in the opening 21 solder 15 ', by means of the beam 36 and in dependence of the reflected beam 36th ' detected. The detection device 2, in particular the image display unit 6, in this embodiment exemplifies the breakthrough edge 4T and the solidified solder 15 ".
Der elektrische Anschluss 18 ist in diesem Ausführungsbeispiel mittels einer elektrisch leitfähigen Via-Verbindung, welche durch eine an einer Innenwand des Durchbruchs 21 ausgebildeten Metallschicht 24 oder Metallhülse gebildet ist, mit der zur Anschlussfläche 40 gegenüberliegenden Seite des Bauelements 7 und dort mit einer elektrisch leitfähigen Schicht 28 verbunden. Die Metallschicht ist beispielsweise eine Kupferschicht, eine Zinnschicht, eine Silberschicht oder eine Goldschicht. Die elektrisch leitfähige Schicht 28 umschließt den Durchbruch 21 und ist in diesem Ausführungsbeispiel durch eine Leiterbahn gebildet. Die elektrisch leitfähige Schicht 28 verbindet so den elektrischen Anschluss 18 mit der zu der Anschlussfläche 40 gegenüberliegenden Seite des Bauelements 7 und ist mittels wenigstens einer oder mehreren Mikro-Via-Verbindungen mit dem Halbleiter-Chip 33 elektrisch verbunden. Sowohl der Durchbruch 21 , als auch der Durchbruch 22 und Durchbrüche für die Mikro-Via-Verbindungen wie das beispielhaft bezeichnete Mikro-Via 38, und ein weiteres beispielhaft bezeichnetes Mikro-Via 39, welches mittels einer weiteren elektrisch leitfähigen Schicht und über eine Metallisierung des Durchbruchs 22 mit dem Anschluss 19 verbunden ist, können jeweils beispielsweise mittels Laserbohren oder mittels The electrical connection 18 is in this embodiment by means of an electrically conductive via connection, which is formed by a formed on an inner wall of the opening 21 metal layer 24 or metal sleeve, with the opposite surface of the pad 40 of the device 7 and there connected to an electrically conductive layer 28. The metal layer is, for example, a copper layer, a tin layer, a silver layer or a gold layer. The electrically conductive layer 28 encloses the opening 21 and is formed in this embodiment by a conductor track. The electrically conductive layer 28 thus connects the electrical connection 18 with the side of the component 7 opposite the connection surface 40 and is electrically connected to the semiconductor chip 33 by means of at least one or more micro-via connections. Both the breakthrough 21, as well as the breakthrough 22 and openings for the micro-via connections such as the exemplified micro via 38, and another exemplified micro via 39, which by means of another electrically conductive layer and a metallization of the Breakthrough 22 is connected to the terminal 19 can, for example, by means of laser drilling or by means
mechanischem Bohren erzeugt sein. Die Mikro-Via's wie das Mikro-Via 38 und das Mikro-Via 39 weisen jeweils beispielsweise einen Durchmesser von be generated mechanical drilling. The micro via's, such as the micro via 38 and the micro via 39, each have a diameter of, for example
150 Mikrometer auf. Der Durchbruch 21 weist beispielsweise einen Durchmesser zwischen 0,1 Millimeter und einem Millimeter auf. 150 microns. The breakthrough 21 has, for example, a diameter between 0.1 millimeter and one millimeter.
Das Halbleiterbauteil 7 kann zusätzlich oder alternativ zu den in Figur 1 dargestellten Mikrovias noch weitere Mikrovias aufweisen, die auf einer zu den Mikrivias 38 und 39 abgewandten Seite des Halbleiters 33 angeordnet sind und beispielsweise den Halbleiter 33 mit dem Schaltungsträger 9 elektrisch verbinden, beispielsweise über eine andere mit dem elektrischen Anschluss 18 und/oder mit dem elektrischen Anschluss 19 anderen leitfähigen Schicht, vergleichbar zu den bereits genannten leitfähigen Schicht 28. Grundsätzlich ist dann bei einer fehlerfreien Lotverbindung der elektrischen Anschlüsse 18 und 19 mit dem Schaltungsträger 9 auch der Halbleiter 33 elektrisch mit dem  In addition or as an alternative to the microvias shown in FIG. 1, the semiconductor component 7 can also have further microvias which are arranged on a side of the semiconductor 33 facing away from the microvias 38 and 39 and electrically connect, for example, the semiconductor 33 to the circuit carrier 9, for example via a Other with the electrical connection 18 and / or with the electrical connection 19 other conductive layer, comparable to the aforementioned conductive layer 28. Basically, then in a fault-free solder connection of the electrical connections 18 and 19 with the circuit substrate 9 and the semiconductor 33 with electrically the
Schaltungsträger 9 verbunden aufgrund der zuvor beschriebenen bestehenden elektrischen Verbindung der elektrischen Anschlüsse 18 und/oder 19 mit dem Halbleiter 33 mittels einer der ebenso zuvor genannten elektrisch leitfähigen Schichten und den Micro-Vias 39, 39. Circuit substrate 9 connected due to the previously described existing electrical connection of the electrical connections 18 and / or 19 with the semiconductor 33 by means of one of the above-mentioned electrically conductive layers and the micro vias 39, 39th
Die Metallschicht 24 an der Innenwand des Durchbruchs 21 kann beispielsweise mittels Galvanisierung in einem gemeinsamen Galvanisierungsschritt zum Erzeugen der Mikro-Via's erzeugt werden. Auf diese Weise kann das The metal layer 24 on the inner wall of the aperture 21 may be formed, for example, by electroplating in a common plating step to create the micro via. That way that can
Bauelement 7, insbesondere die Durchbrüche 21 und 22, zur optischen Kontrolle der Lotstellen durch die Erfassungsvorrichtung 2 aufwandsgünstig bereitgestellt werden. Component 7, in particular the openings 21 and 22, for optical control the Lotstellen be provided by the detection device 2 low cost.
Figur 1 zeigt auch ein Bauelement 8, welches abschnittsweise dargestellt ist und welches wie das Bauelement 7, ein Halbleiterbauteil im Inneren oder an einer Oberfläche des Bauelements 8 aufweisen kann. FIG. 1 also shows a component 8 which is shown in sections and which, like the component 7, may have a semiconductor component in the interior or on a surface of the component 8.
Das Bauelement 8 weist einen Durchbruch 20 auf, welcher in diesem The component 8 has an opening 20, which in this
Ausführungsbeispiel zu einem elektrischen Anschluss 17 hin verjüngt, und so trichterförmig oder stumpfkegelförmig ausgebildet ist. Der Durchbruch 20 kann beispielsweise mittels Laserbohren und mittels kreisenden Bewegungen eines Laserstrahls beim Laserbohren in dem Bauelement 8 erzeugt werden. Embodiment to an electrical connection 17 tapers toward, and is funnel-shaped or truncated cone shaped. The opening 20 can be produced, for example, by means of laser drilling and by means of circular movements of a laser beam during laser drilling in the component 8.
Der elektrische Anschluss 17 ist in diesem Ausführungsbeispiel mittels eines Lotmittels 16 mit einer elektrisch leitfähigen Schicht 1 1 , insbesondere einem Lotpad eines Schaltungsträgers 10, lotverbunden. Das Lotmittel 16 konnte in einer verflüssigten Form in den Durchbruch 20 hineingesaugt werden. Der Durchbruch 20 ist zu einer zum Anschluss 17 gegenüberliegenden Seite des Bauelements 8 trichterförmig aufgeweitet, sodass der Kapillareffekt, welcher das verflüssigte Lotmittel in den Durchbruch 20 hineinsaugt, nur bis hin zu einem Längsabschnitt 29 des Durchbruchs 20 wirksam ist. Vorteilhaft kann so nur ein vorbestimmter Teil des Lotmittels 16 von der Lotstelle abgeführt werden. The electrical connection 17 is in this embodiment by means of a solder 16 with an electrically conductive layer 1 1, in particular a solder pad of a circuit substrate 10, solder-connected. The solder 16 could be sucked into the breakthrough 20 in a liquefied form. The opening 20 is flared funnel-shaped to a side 17 of the component 8 opposite the connection 17, so that the capillary effect, which sucks the liquefied solder into the opening 20, is effective only up to a longitudinal section 29 of the opening 20. Advantageously, only a predetermined part of the soldering agent 16 can thus be removed from the soldering point.
Der Durchbruch 20 weist an einer Innenwand eine Metallschicht 23 auf, welche in diesem Ausführungsbeispiel reflektierend ausgebildet ist. Die Metallschicht 23 kann so eine elektrisch leitfähige Via-Verbindung ausbilden, welche eine Leiterbahn des Bauelements 8 mit dem elektrischen Anschluss 17 verbindet. Die Metallschicht 23 kann zusätzlich vorteilhaft einen Reflektor für die The aperture 20 has on an inner wall on a metal layer 23 which is formed reflective in this embodiment. The metal layer 23 can thus form an electrically conductive via connection, which connects a conductor track of the component 8 to the electrical connection 17. The metal layer 23 may additionally advantageously a reflector for the
elektromagnetischen Strahlen, beispielsweise den elektromagnetischen Strahl 36, erzeugt von dem Sender 3, bilden, wodurch ein Erfassen der korrekten Lotverbindung, insbesondere ein Erfassen des in dem Durchbruch 20 erstarrten Lotmittels 16‘ mittels der Erfassungsvorrichtung 2 erleichtert werden kann. electromagnetic radiation, for example the electromagnetic beam 36, generated by the transmitter 3, whereby a detection of the correct solder connection, in particular a detection of the solidified in the opening 20 solder 16 'can be facilitated by means of the detection device 2.
Der Durchbruch 20 weist im Bereich des Anschlusses 17 einen kleineren Durchmesser 31 auf, als einen Durchmesser 32 an einer Trichtermündung, gebildet durch einen Durchbruchrand 26 an einer Oberfläche des Bauelements 8, welche zu dem elektrischen Anschluss 17 gegenüberliegt. Die The opening 20 has, in the region of the connection 17, a smaller diameter 31 than a diameter 32 at a funnel opening, formed by a breakthrough edge 26 on a surface of the device 8, which is opposite to the electrical connection 17. The
elektromagnetischen Strahlen zum Erfassen des erstarrten Lotmittels 16‘ wie der elektromagnetische Strahl 36 können so leicht in den Durchbruch 20 aus zueinander verschiedenen Einfallswinkeln einfallen und von dem erstarrtenElectromagnetic beams for detecting the solidified solder 16 ', such as the electromagnetic beam 36, can thus easily enter the opening 20 from mutually different angles of incidence and from the solidified one
Lotmittel 16‘ reflektierte Strahlen 36‘ können leicht aus dem Durchbruch 20 wieder austreten und zusätzlich dazu an der Metallschicht 23 an der Innenwand reflektiert werden, was eine gute optische Erfassbarkeit des erstarrten Lotmittels 16‘ bewirkt. Solder 16 'reflected beams 36' can easily escape from the opening 20 again and additionally be reflected on the metal layer 23 on the inner wall, which causes a good optical detectability of the solidified solder 16 '.
Der Durchmesser 32 des Durchbruchs 20 der zum elektrischen Anschluss 17 gegenüberliegenden Seite weist eine kleinere Abmessung auf, als eine The diameter 32 of the opening 20 of the opposite side to the electrical connection 17 has a smaller dimension than a
Dickenerstreckung 30 des Bauelements 8, welches von dem Durchbruch 20 durchsetzt ist. Thickness extension 30 of the device 8, which is penetrated by the opening 20.
Figur 1 zeigt auch - gestrichelt dargestellt - eine Variante des Bauelements 7, bei dem der Durchbruch 21 trichterförmig ausgebildet ist, was durch die gestrichelt dargestellte Durchbruchwand 25 dargestellt ist, welche sich von dem elektrischen Anschluss 18 bis hin zu einem Durchbruchrand 27 des trichterförmigen Figure 1 also shows - shown in phantom - a variant of the device 7, wherein the opening 21 is funnel-shaped, which is represented by the dashed lines shown breakthrough wall 25, which extends from the electrical connection 18 to a breakthrough edge 27 of the funnel-shaped
Durchbruchs erstreckt. Die Bildwiedergabeeinheit 6 zeigt auch - gestrichelt dargestellt - die Variante des Bauteils 7 mit dem trichterförmigen Durchbruch 25, wobei der Durchbruchrand 27‘ beispielhaft wiedergegeben ist. Die Leiterbahn 28 ist von der Bildwiedergabeeinheit als wiedergegebene Leiterbahn 28‘ gezeigt. Breakthrough extends. The image display unit 6 also shows - shown in dashed lines - the variant of the component 7 with the funnel-shaped opening 25, wherein the breakthrough edge 27 'is reproduced by way of example. The trace 28 is shown by the image display unit as reproduced trace 28 '.

Claims

Ansprüche claims
1. Halbleiterbauteil (7, 8) mit zum Verlöten mit einem Schaltungsträger (9, 10) ausgebildeten elektrischen Anschlüssen (17, 18, 19), wobei das Halbleiterbauteil (7, 8) einen Halbleiter (33), insbesondere 1. Semiconductor component (7, 8) with soldering to a circuit carrier (9, 10) formed electrical terminals (17, 18, 19), wherein the semiconductor device (7, 8) comprises a semiconductor (33), in particular
Halbleiterchip und eine Anschlussfläche (40) aufweist, wobei an der Semiconductor chip and a pad (40), wherein at the
Anschlussfläche (40) eine Mehrzahl elektrische Anschlüsse (17, 18, 19) ausgebildet sind, welche jeweils eine zum Verlöten ausgebildete Kontaktfläche (42, 43) aufweisen, dadurch gekennzeichnet, dass das Halbleiterbauteil (7, 8) wenigstens einen Durchbruch (20, 21 , 22) aufweist, welcher sich zwischen der Kontaktfläche (42, 43) und einer zur Anschlussfläche (40) gegenüberliegenden Oberfläche des Halbleiterbauteils (7, 8) erstreckt und derart ausgebildet ist, dass eine Lotstelle (14, 15, 16) im Bereich des Connection surface (40) a plurality of electrical terminals (17, 18, 19) are formed, each having a formed for soldering contact surface (42, 43), characterized in that the semiconductor device (7, 8) at least one opening (20, 21 , 22), which extends between the contact surface (42, 43) and a surface of the semiconductor component (7, 8) opposite the connection surface (40) and is designed such that a soldering location (14, 15, 16) in the region of
Anschlusses (17, 18, 19) durch den Durchbruch (20, 21 , 22) hindurch von außen optisch erfasst werden kann. Terminal (17, 18, 19) through the opening (20, 21, 22) can be optically detected from the outside.
2. Halbleiterbauteil (7, 8) nach Anspruch 1 , dadurch gekennzeichnet, dass das Halbleiterbauteil (7, 8) ein Substrat (34, 35) aufweist, wobei der Halbleiter (33) mit dem Substrat (34, 35) verbunden ist, wobei der wenigstens eine Durchbruch (20, 21 , 22) in dem Substrat (34, 35) ausgebildet ist. Second semiconductor device (7, 8) according to claim 1, characterized in that the semiconductor device (7, 8) comprises a substrate (34, 35), wherein the semiconductor (33) to the substrate (34, 35) is connected, wherein the at least one aperture (20, 21, 22) is formed in the substrate (34, 35).
3. Halbleiterbauteil (7, 8) nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass das Halbleiterbauteil (7, 8) einen Moldkörper aufweist, und der Halbleiter (33) in den Moldkörper eingebettet ist, wobei der Durchbruch (20, 21 , 22) in dem Moldkörper ausgebildet ist. 3. Semiconductor component (7, 8) according to claim 1 or 2, characterized in that the semiconductor component (7, 8) has a mold body, and the semiconductor (33) is embedded in the mold body, wherein the opening (20, 21, 22 ) is formed in the mold body.
4. Halbleiterbauteil (7, 8) nach Anspruch 3, dadurch gekennzeichnet, dass das Halbleiterbauteil (7, 8) ein gehäuseloser Halbleiter, insbesondere Bare-Die ist, wobei der Durchbruch (20, 21 , 22) in dem Halbleiter (33) ausgebildet ist. 4. The semiconductor device (7, 8) according to claim 3, characterized in that the semiconductor device (7, 8) is a caseless semiconductor, in particular bare die, wherein the aperture (20, 21, 22) formed in the semiconductor (33) is.
5. Halbleiterbauteil (7, 8) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der Durchbruch (20, 21 , 22) zur Kontaktfläche (42, 43) hin einen abnehmenden Durchmesser (31 , 32) aufweist. 5. Semiconductor component (7, 8) according to one of the preceding claims, characterized in that the opening (20, 21, 22) to the contact surface (42, 43) towards a decreasing diameter (31, 32).
6. Halbleiterbauteil (7, 8) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das an einer Durchbruchwand des Durchbruchs (20, 21 , 22) eine insbesondere reflektierend ausgebildete Metallschicht (23, 24) ausgebildet ist. 6. The semiconductor device (7, 8) according to any one of the preceding claims, characterized in that on a breakthrough wall of the opening (20, 21, 22) is formed in particular a reflective metal layer (23, 24).
7. Halbleiterbauteil (7, 8) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass ein Durchmesser (31 , 32) des Durchbruchs kleiner ist als eine Dickenerstreckung (30) des Schaltungsträgers (34, 35). 7. Semiconductor component (7, 8) according to one of the preceding claims, characterized in that a diameter (31, 32) of the aperture is smaller than a thickness extension (30) of the circuit carrier (34, 35).
8. Kontaktanordnung (1 ) mit einem Halbleiterbauteil (7, 8) gemäß einem der vorhergehenden Ansprüche, wobei das Halbleiterbauteil (7, 8) mit einem Schaltungsträger (9, 10) 8. Contact arrangement (1) with a semiconductor component (7, 8) according to one of the preceding claims, wherein the semiconductor component (7, 8) is provided with a circuit carrier (9, 10).
lötverbunden ist, und eine Lotverbindung (14, 15, 16) zwischen dem Schaltungsträger (9, 10) und dem Halbleiterbauteil (7, 8) durch den Durchbruch (20, 21 , 22) hindurch insbesondere optisch erfasst werden kann. solder jointed, and a solder joint (14, 15, 16) between the Circuit carrier (9, 10) and the semiconductor device (7, 8) through the opening (20, 21, 22) through in particular can be optically detected.
9. Verfahren zum Erfassen einer Lotverbindung (14, 15, 16), bei dem 9. A method for detecting a solder joint (14, 15, 16), in which
elektromagnetische Strahlen (36) durch einen Durchbruch (20, 21 , 22) in einemelectromagnetic radiation (36) through an opening (20, 21, 22) in one
Halbleiterbauteil (7, 8) hindurch wenigstens bis hin zu einer Kontaktfläche (42, 43) des Bauteils (7, 8) gesendet werden und von der Lotverbindung (14, 15, 16) reflektierte elektromagnetische Strahlen (36’) erfasst werden und in Abhängigkeit eines von den erfassten reflektierten Strahlen (36’) ein Qualitätssignal erzeugt, wird, das ein Vorhandensein und/oder eine Beschaffenheit der LotverbindungSemiconductor component (7, 8) through at least up to a contact surface (42, 43) of the component (7, 8) are sent and from the solder connection (14, 15, 16) reflected electromagnetic radiation (36 ') are detected and in dependence one of the detected reflected beams (36 ') produces a quality signal, the presence and / or nature of the solder connection
(14, 15, 16) repräsentiert. (14, 15, 16).
10. Verfahren nach Anspruch 9, bei dem der Durchbruch (20) trichterförmig ausgebildet ist und die 10. The method of claim 9, wherein the opening (20) is funnel-shaped and the
elektromagnetischen Strahlen (36) auf eine Trichtermündung (26) des electromagnetic radiation (36) on a funnel mouth (26) of the
Durchbruchs (20) gesendet werden und dort auf die Lotverbindung (16) treffen und die von der Lotverbindung (16) reflektierten Strahlen (36’) an einer Breakthrough (20) are sent and meet there on the solder connection (16) and the of the solder connection (16) reflected beams (36 ') on a
Trichterförmigen Durchbruchwand (23) eine Strahlumlenkung erfahren, und das Qualitätssignal zusätzlich in Abhängigkeit der an der Durchbruchwand (23) reflektierten Strahlen (36’) erzeugt wird. Funnel-shaped breakthrough wall (23) undergo a beam deflection, and the quality signal in addition depending on the at the breakthrough wall (23) reflected beams (36 ') is generated.
PCT/EP2018/082863 2017-12-21 2018-11-28 Semiconductor component having an opening for optical monitoring WO2019120913A1 (en)

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CN114206534A (en) * 2020-04-02 2022-03-18 Tdk电子股份有限公司 Electrical soldered connection, sensor with soldered connection and method for producing

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