DE102012217623A1 - Optoelectronic semiconductor device i.e. LED package, has optoelectronic semiconductor chip arranged at bottom of recess on plastic carrier and copper electrical conductor embedded in plastic substrate - Google Patents

Abstract

The device (100) has a plastic substrate (200) with a bowl-shaped recess (210), and an optoelectronic semiconductor chip (300) i.e. LED chip, arranged at bottom (211) of the recess on the plastic substrate. A copper electrical conductor is embedded in the plastic substrate. The recess comprises an optical reflective coating (213), and the semiconductor chip is electrically disconnected from reflective coating. An electrical conducting wire (340) is arranged between the semiconductor chip and an upper contact surface (235) of the device.

Description

The present invention relates to an optoelectronic semiconductor device according to claim 1.

Electronic components with three-dimensional injection-molded circuit carriers are known as Molded Interconnect Devices (MID) from the prior art. Such components have injection-molded plastic carrier, are applied to the metallic interconnects and pads. Also optoelectronic devices in MID technology are known. For example, there are light-emitting diodes (LED packages) with optical reflector in MID technology.

An object of the present invention is to provide an optoelectronic semiconductor device. This object is achieved by an optoelectronic semiconductor component with the features of claim 1. Preferred developments are specified in the dependent claims.

An optoelectronic semiconductor device comprises a plastic carrier having a bowl-shaped recess. The optoelectronic semiconductor component further comprises an optoelectronic semiconductor chip, which is arranged on a bottom of the recess on the plastic carrier. In this case, an electrically conductive through-hole is embedded in the plastic carrier. Advantageously, the electrically conductive through-contact of this optoelectronic semiconductor component can provide an electrically conductive connection between an upper side and a lower side of the plastic carrier. As a result, provision can advantageously be made for provision of metallization arranged on an outer surface of the plastic carrier. As a result, a risk of unintentional setting up of an optoelectronic semiconductor component during solder mounting of the optoelectronic semiconductor component (tombstoning) can advantageously be reduced. Advantageously, the electrically conductive through-contact can also be used to dissipate waste heat produced by the optoelectronic semiconductor chip. This advantageously makes it possible to operate the optoelectronic semiconductor chip with higher power. Due to the arrangement of the optoelectronic semiconductor chip at the bottom of the depression, the optoelectronic semiconductor chip is advantageously protected against mechanical damage.

In one embodiment of the optoelectronic semiconductor component, the depression has an optically reflective coating. Advantageously, the recess with the optically reflective coating forms an optical reflector, which increases a beam strength of the optoelectronic semiconductor component.

In one embodiment of the optoelectronic semiconductor device, the semiconductor chip is electrically separated from the reflective coating. Advantageously, the embedded in the plastic carrier, electrically conductive contact of the optoelectronic semiconductor device can be used for electrical contacting of the optoelectronic semiconductor chip. The reflective coating then does not have to serve for electrical contacting of the optoelectronic semiconductor chip. This makes it possible to galvanically separate the semiconductor chip from the reflective coating. This makes it possible to optimize the material of the reflective coating for optimal spectral reflection. A consideration of electrical properties or a good electrical contactability of the material of the reflective coating is not required. For example, the reflective coating may comprise silver, resulting in a good spectral reflectance of the reflective coating and low manufacturing costs.

In one embodiment of the optoelectronic semiconductor component, an inner contact surface is arranged at the bottom of the depression. In this case, the optoelectronic semiconductor chip is arranged on the inner contact surface. In this case, the inner contact surface and the optically reflective coating on different materials. Advantageously, the material of the reflective coating can thereby be optimized for optimal spectral reflection, while the material of the inner contact surface can be optimized for good electrical contactability.

In one embodiment of the optoelectronic semiconductor component, a rear side of the plastic carrier has a first electrical contact surface and a second electrical contact surface. Advantageously, the optoelectronic semiconductor device is thereby suitable for surface mounting by means of a reflow soldering method in SMT technology.

In one embodiment of the optoelectronic semiconductor component, a through contact establishes an electrically conductive connection between the bottom of the recess and the first electrical contact surface. Advantageously, the optoelectronic semiconductor chip of the optoelectronic semiconductor component can thereby be electrically contacted via the first electrical contact area and the electrically conductive through contact.

In one embodiment of the optoelectronic semiconductor component, the plastic carrier has an upper electrical contact surface. Advantageously, the upper electrical contact surface then provides a second polarity contact for contacting the optoelectronic semiconductor chip.

In one embodiment of the optoelectronic semiconductor component, an electrically conductive wire is arranged between the semiconductor chip and the upper contact surface. Advantageously, the upper contact surface then serves for electrical contacting of the optoelectronic semiconductor chip.

In one embodiment of the optoelectronic semiconductor device, a via makes an electrically conductive connection between the upper contact surface and the second contact surface. Advantageously, the optoelectronic semiconductor chip can thereby be electrically contacted via the second contact area and the electrically conductive through-contact.

In an embodiment of the optoelectronic semiconductor component, an outer surface of the plastic carrier has an outer metallization, which produces an electrically conductive connection between the reflective coating and the first contact surface or between the upper contact surface and the second contact surface. Advantageously, only an electrically conductive through-contact must be embedded in the plastic carrier of this optoelectronic semiconductor component. The electrically conductive through-contact then mediates an electrically conductive connection to the optoelectronic semiconductor chip. A second electrically conductive connection to the optoelectronic semiconductor chip is produced via the outer metallization.

In one embodiment of the optoelectronic semiconductor component, the optoelectronic semiconductor chip has a first electrical connection surface on an upper side and a second electrical connection surface on an underside. Advantageously, such an optoelectronic semiconductor chip is particularly simple and inexpensive to produce and can be connected in a simple manner with a arranged at the bottom of the dish-shaped recess of the plastic carrier contact surface and arranged on an upper surface of the plastic carrier upper electrical contact surface.

In one embodiment of the optoelectronic semiconductor device, the optoelectronic semiconductor chip is an LED chip. The optoelectronic semiconductor component then forms an LED package.

In one embodiment of the optoelectronic semiconductor component, the electrically conductive through-contact has copper. Advantageously, a copper-containing electrically conductive via has high electrical and thermal conductivities.

In one embodiment of the optoelectronic semiconductor component, the plastic carrier is produced by an injection molding process. Advantageously, the plastic carrier is thereby obtainable very inexpensively and can have a complex three-dimensional geometry.

The above-described characteristics, features, and advantages of this invention, as well as the manner in which they will be achieved, will become clearer and more clearly understood in connection with the following description of the embodiments, which will be described in detail in conjunction with the drawings. Shown schematically in each case:

1 a perspective view of an optoelectronic semiconductor device according to a first embodiment;

2 a section through the optoelectronic semiconductor device according to the first embodiment;

3 a section through an optoelectronic semiconductor device according to a second embodiment; and

4 a section through an optoelectronic semiconductor device according to a third embodiment.

1 shows a slightly schematic perspective view of an optoelectronic semiconductor device 100 according to a first embodiment. 2 shows a schematic representation of a section through the optoelectronic semiconductor device 100 according to the first embodiment. The optoelectronic semiconductor device 100 may in particular be a light-emitting diode component (LED package).

The optoelectronic semiconductor device 100 comprises an optoelectronic semiconductor chip 300 , The optoelectronic semiconductor chip 300 may be in particular an LED chip. The optoelectronic semiconductor chip 300 has a top 301 and one of the top 301 opposite bottom 302 on. At the top 301 of the optoelectronic semiconductor chip 300 is a first electrical connection surface 310 formed of the optoelectronic semiconductor chip. On the bottom 302 of the optoelectronic semiconductor chip 300 is a second electrical connection surface 320 of the optoelectronic semiconductor chip 300 educated.

About the first electrical connection surface 310 and the second electrical connection surface 320 can the optoelectronic semiconductor chip 300 be subjected to an electrical voltage, whereby the optoelectronic semiconductor chip 300 is excited to emission of electromagnetic radiation. The electromagnetic radiation may in particular be visible or infrared light. The optoelectronic semiconductor chip is preferred 300 designed so that the electromagnetic radiation passes through the top 301 from the optoelectronic semiconductor chip 300 is decoupled. The optoelectronic semiconductor chip 300 However, it can also be designed such that the electromagnetic radiation is the optoelectronic semiconductor chip 300 leaves in all spatial directions.

The optoelectronic semiconductor device 100 includes a plastic carrier 200 , The plastic carrier 200 has an electrically insulating material. The plastic carrier 200 is preferably produced by means of an injection molding process (mold process).

The plastic carrier 200 has a substantially cuboid basic shape with an upper side 201 and one of the top 201 opposite back 202 on. At the top 201 of the plastic carrier 200 is a bowl-shaped depression 210 formed, extending from the top 201 in the interior of the plastic carrier 200 extends. The bowl-shaped depression 210 has a floor 211 on. Between the top 201 of the plastic carrier 200 and the floor 211 the bowl-shaped depression 210 the diameter of the bowl-shaped depression narrows 210 continuously. The bowl-shaped depression 210 has over its entire length preferably an approximately circular disk-shaped cross-section. Thus, both the opening of the bowl-shaped recess 210 at the top 201 of the plastic carrier 200 as well as the ground 211 the bowl-shaped depression 210 preferably formed at least approximately circular disc-shaped. The top 201 of the plastic carrier and the bottom 211 the bowl-shaped depression 210 are through a wall 212 the bowl-shaped depression 210 connected, which has a lateral surface of the bowl-shaped recess 210 forms. The bowl-shaped depression 210 can be formed approximately frusto-conical overall. The wall 212 However, as in 1 and 2 shown between the top 201 of the plastic carrier 200 and the floor 211 the bowl-shaped depression 210 be slightly curved.

On the ground 211 the bowl-shaped depression 210 of the plastic carrier 200 is a first upper contact surface 230 arranged. The first upper contact surface 230 has an electrically conductive material, for example a metal. Preferably, the first upper contact surface 230 a material that is well suited for electrical contact. In one embodiment, the first upper contact surface 230 Gold up.

On the wall 212 the bowl-shaped depression 210 of the plastic carrier 200 is an optically reflective coating 213 arranged. The optically reflective coating 213 has a material suitable for the optoelectronic semiconductor chip 300 emitted electromagnetic radiation has good optical reflection properties. For example, the optically reflective coating 213 a metal, such as silver.

The on the wall 212 the bowl-shaped depression 210 arranged optically reflective coating 213 can be from the bottom 211 the bowl-shaped depression 210 arranged first upper contact surface 230 separately, in particular also galvanically separated. This allows the optically reflective coating 213 and the first upper contact surface 230 made of different materials. However, it is of course also possible, the optically reflective coating 213 and the first upper contact surface 230 coherent and / or form of the same material.

The optically reflective coating 213 on the wall 212 the bowl-shaped depression 210 causes electromagnetic radiation that the optoelectronic semiconductor chip 300 in directions other than vertical leaves upward, is deflected in an upward direction. Lateral light is emitted at the optically reflective coating 213 reflected. This increases an effective beam strength of the optoelectronic semiconductor device 100 ,

The bottom 302 of the optoelectronic semiconductor chip 300 is on the first upper contact surface 230 on the ground 211 the bowl-shaped depression 210 arranged. By means of an electrically conductive conductive adhesive 330 is the second electrical connection surface 320 on the bottom 302 of the optoelectronic semiconductor chip 300 electrically conductive with the first upper contact surface 230 connected. Instead of a conductive adhesive 330 Of course, a solder or other electrically conductive connection could be provided.

The plastic carrier 200 of the optoelectronic semiconductor device 100 points at its top 201 a recess 220 on top, which has a recess at the top 201 forms. The recess 220 is the bowl-shaped depression 210 adjacent and formed with this contiguous. At the bottom of the recess 220 is a second upper contact surface 235 arranged. The second upper one contact area 235 has an electrically conductive material. For example, the second upper contact surface 235 have the same material as the first upper contact surface 230 ,

The first electrical connection surface 310 at the top 301 of the optoelectronic semiconductor chip 300 is over a bonding wire 340 electrically conductive with the second upper contact surface 235 at the bottom of the recess 220 of the plastic carrier 200 connected. As the optoelectronic semiconductor chip 300 in the bowl-shaped depression 210 and the second upper contact surface 235 in the recess 220 is arranged, the bonding wire runs 240 over its entire length below the top 201 of the plastic carrier 200 and is thereby advantageously protected against mechanical damage from environmental influences. However, it is also possible to provide the recess 220 to renounce. In this case, the second upper contact surface 235 at the top 201 of the plastic carrier 200 arranged.

At the back 202 of the plastic carrier 200 of the optoelectronic semiconductor device 100 are a first lower contact surface 240 and a second lower contact surface 245 arranged. The first lower contact surface 240 and the second lower contact surface 245 each have an electrically conductive material, preferably a metal. The first lower contact surface 240 and the second lower contact surface 245 are electrically isolated from each other. The lower contact surface 240 . 245 are intended to be electrically connected to a circuit carrier by means of a reflow soldering process. The optoelectronic semiconductor device 100 thereby forms an SMT component suitable for surface mounting.

In the plastic carrier 200 of the optoelectronic semiconductor device 100 are a first contact 250 and a second via 255 embedded. The first contact 250 and the second via 255 have an electrically conductive material, which is preferably also good thermal conductivity. For example, the first via 250 and the second via 255 each having copper. The through contacts 250 . 255 can also be called vias (vertical interconnect access). The through contacts 250 . 255 are preferred already in the production of the plastic carrier 200 by means of an injection molding process in the plastic carrier 200 cast.

The first contact 250 extends between the ground 211 the bowl-shaped depression 210 and the back 202 of the plastic carrier 200 through the plastic carrier 200 , The first contact 250 forms an electrically conductive connection between the ground 211 the bowl-shaped depression 210 of the plastic carrier 200 arranged first upper contact surface 230 and the one on the back 202 of the plastic carrier 200 arranged first lower contact surface 240 ,

The second contact 255 extends between the bottom of the recess 220 and the back 202 of the plastic carrier 200 through the plastic carrier 200 , The second contact 255 provides an electrically conductive connection between the bottom of the recess 220 arranged second upper contact surface 235 and the one on the back 202 of the plastic carrier 200 arranged second lower contact surface 245 ago.

Thus, the first lower contact surface 240 of the optoelectronic semiconductor device 100 over the first contact 250 , the first upper contact surface 230 and the conductive adhesive 330 with the second electrical connection surface 320 of the optoelectronic semiconductor chip 300 connected. The second lower contact surface 245 of the optoelectronic semiconductor device 100 is over the second via 255 , the second upper contact surface 235 and the bonding wire 340 with the first electrical connection surface 310 of the optoelectronic semiconductor chip 300 connected.

The first contact 250 also serves to during operation of the optoelectronic semiconductor device 100 through the optoelectronic semiconductor chip 300 produced waste heat from the optoelectronic semiconductor chip 300 dissipate. The waste heat flows from the optoelectronic semiconductor chip 300 over the first upper contact surface 230 and the first via 250 to the first lower contact surface 240 , From there, the heat can flow away.

An advantage of the optoelectronic semiconductor device 100 is that on the side surfaces of the plastic carrier 200 no metallization must be provided. As a result, there is no risk that the optoelectronic semiconductor component 100 during a surface mounting unintentionally straightens (tombstoning effect).

In an alternative embodiment of an optoelectronic semiconductor component not shown in the figures, instead of the optoelectronic semiconductor chip 300 provided with two arranged on opposite surfaces pads an optoelectronic semiconductor chip with two arranged on the bottom pads. In this embodiment, two separate upper contact surfaces are arranged at the bottom of the bowl-shaped recess of the plastic carrier, which are each electrically connected to one of the pads of the optoelectronic semiconductor chip in combination.

One of these upper contact surfaces is electrically conductively connected via a first through-contact embedded in the plastic carrier to a first lower contact surface on the rear side of the plastic carrier. The second of the upper contact surfaces at the bottom of the bowl-shaped depression may be connected via an embedded in the plastic carrier second contact electrically conductively connected to a second lower contact surface on the back of the plastic carrier.

Alternatively, the second upper contact surface may be connected via a bonding wire to a further contact surface arranged on the upper side of the plastic carrier. This further contact surface can then in turn be connected via an embedded in the plastic carrier through contact with a arranged on the back of the plastic carrier of the optoelectronic semiconductor device second lower contact surface.

3 shows a schematic sectional view of an optoelectronic semiconductor device 1100 according to a second embodiment. The optoelectronic semiconductor device 1100 has correspondences with the optoelectronic semiconductor device 100 of the 1 and 2 on. Corresponding components are therefore provided with the same reference numerals and will not be described again in detail below.

Instead of the plastic carrier 200 has the optoelectronic semiconductor device 1100 a plastic carrier 1200 on. Instead of the second upper contact surface 235 is in the recess 220 of the plastic carrier 1200 a second upper contact surface 1235 arranged. Instead of the second lower contact surface 245 is at the back 202 of the plastic carrier 1200 a second lower contact surface 1245 arranged. The second upper contact surface 1235 and the second lower contact surface 1245 are electrically conductive and may have the same materials as the second upper contact surface 235 and the second lower contact surface 245 of the optoelectronic semiconductor device 100 ,

One the top 201 of the plastic carrier 1200 with the back 202 of the plastic carrier 1200 of the optoelectronic semiconductor device 1100 connecting side surface of the plastic carrier 1200 has an outer metallization 1255 on. The outer metallization 1255 is both with the second upper contact surface 1235 as well as with the second lower contact surface 1245 connected and thereby provides an electrically conductive connection between the second upper contact surface 1235 and the second lower contact surface 1245 ago. The second contact 255 omitted in the case of the optoelectronic semiconductor component 1100 ,

4 shows a schematic representation of an optoelectronic semiconductor device 2100 according to a third embodiment. The optoelectronic semiconductor device 2100 has agreement with the optoelectronic semiconductor device 100 of the 1 and 2 on. Corresponding components are therefore provided with the same reference numerals and will not be described again in detail below.

Instead of the plastic carrier 200 has the optoelectronic semiconductor device 2100 a plastic carrier 2200 on. On the ground 211 the bowl-shaped depression 210 of the plastic carrier 2200 is instead of the first upper contact surface 230 a first upper contact surface 2230 arranged. On the wall 212 the bowl-shaped depression 210 of the plastic carrier 2200 is instead of the optically reflective coating 213 an optically reflective coating 2213 arranged. The optically reflective coating 2213 is electrically conductive with the first upper contact surface 2230 connected. The optically reflective coating is preferred 2213 and the first upper contact surface 2230 integrally formed. At the back 202 of the plastic carrier 2200 of the optoelectronic semiconductor device 1200 is instead of the first lower contact surface 240 a first lower contact surface 2240 arranged.

At one the top 201 with the back 202 of the plastic carrier 2200 connecting side surface of the plastic carrier 2200 is an exterior metallization 2250 arranged. The outer metallization 2250 has an electrically conductive material. About the outer metallization 2250 is the optically reflective coating 2213 electrically conductive with the first lower contact surface 2240 connected. Thus, there is the optically reflective coating 2213 and the outer metallization 2250 also an electrically conductive connection between the first upper contact surface 2230 on the ground 211 the bowl-shaped depression 210 and the first lower contact surface 2240 at the back 202 of the plastic carrier 2200 , The embedded first contact 250 not applicable to the plastic carrier 2200 of the optoelectronic semiconductor device 2100 ,

The invention has been further illustrated and described with reference to the preferred embodiments. However, the invention is not limited to the disclosed examples. Rather, other variations may be deduced therefrom by those skilled in the art without departing from the scope of the invention.

LIST OF REFERENCE NUMBERS

100

Optoelectronic semiconductor device

200

Plastic carrier

201

top

202

back

210

bowl-shaped depression

211

ground

212

wall

213

optically reflective coating

220

recess

230

first upper contact surface

235

second upper contact surface

240

first lower contact surface

245

second lower contact surface

250

first contact

255

second contact

300

Optoelectronic semiconductor chip

301

top

302

bottom

310

first electrical connection surface

320

second electrical connection surface

330

conductive adhesive

340

bonding wire

1100

 Optoelectronic semiconductor device

1200

 Plastic carrier

1235

 second upper contact surface

1245

 second lower contact surface

1255

 external metallization

2100

 Optoelectronic semiconductor device

2200

 Plastic carrier

2213

 optically reflective coating

2230

 first upper contact surface

2240

 first lower contact surface

2250

 external metallization

Claims (14)

Optoelectronic semiconductor component ( 100 . 1100 . 2100 ) with a plastic carrier ( 200 . 1200 . 2200 ), which has a bowl-shaped depression ( 210 ), and an optoelectronic semiconductor chip ( 300 ) sitting on a floor ( 211 ) of the depression ( 210 ) on the plastic carrier ( 200 . 1200 . 2200 ), wherein an electrically conductive through contact ( 250 . 255 ) in the plastic carrier ( 200 . 1200 . 2200 ) is embedded. Optoelectronic semiconductor component ( 100 . 1100 . 2100 ) according to claim 1, wherein the recess ( 210 ) an optically reflective coating ( 213 . 2213 ) having. Optoelectronic semiconductor component ( 100 . 1100 ) according to claim 2, wherein the semiconductor chip ( 300 ) electrically from the reflective coating ( 213 ) is disconnected. Optoelectronic semiconductor component ( 100 . 1100 ) according to claim 3, wherein at the bottom ( 211 ) of the depression ( 210 ) an inner contact surface ( 230 ), wherein the optoelectronic semiconductor chip ( 300 ) on the inner contact surface ( 230 ), wherein the inner contact surface ( 230 ) and the optically reflective coating ( 213 . 2213 ) have different materials. Optoelectronic semiconductor component ( 100 . 1100 . 2100 ) according to one of the preceding claims, wherein a rear side ( 202 ) of the plastic carrier ( 200 . 1200 . 2200 ) a first electrical contact surface ( 240 . 2240 ) and a second electrical contact surface ( 245 . 1245 ) having. Optoelectronic semiconductor component ( 100 . 1100 ) according to claim 5, wherein a through contact ( 250 ) an electrically conductive connection between the ground ( 211 ) of the depression ( 210 ) and the first electrical contact surface ( 240 ). Optoelectronic semiconductor component ( 100 . 1100 . 2100 ) according to one of the preceding claims, wherein the plastic carrier ( 200 . 1200 . 2200 ) an upper electrical contact surface ( 235 . 1235 ) having. Optoelectronic semiconductor component ( 100 . 1100 . 2100 ) according to claim 7, wherein an electrically conductive wire ( 340 ) between the semiconductor chip ( 300 ) and the upper contact surface ( 235 . 1235 ) is arranged. Optoelectronic semiconductor component ( 100 . 2100 ) according to one of claims 5 and 6 and one of claims 7 and 8, wherein a through contact ( 255 ) an electrically conductive connection between the upper contact surface ( 235 ) and the second contact surface ( 245 . 1245 ). Optoelectronic semiconductor component ( 1100 . 2100 ) according to claim 5 and any one of claims 2 and 7, wherein an outer surface of the plastic carrier ( 1200 . 2200 ) an outer metallization ( 1255 . 2250 ) having an electrically conductive connection between the reflective coating ( 2213 ) and the first contact surface ( 2240 ) or between the upper contact surface ( 1235 ) and the second contact surface ( 1245 ). Optoelectronic semiconductor component ( 100 . 1100 . 2100 ) according to one of the preceding Claims, wherein the semiconductor chip ( 300 ) on a top side ( 301 ) a first electrical connection surface ( 310 ) and on a lower side ( 302 ) a second electrical connection surface ( 320 ) having. Optoelectronic semiconductor component ( 100 . 1100 . 2100 ) according to one of the preceding claims, wherein the semiconductor chip ( 300 ) is an LED chip. Optoelectronic semiconductor component ( 100 . 1100 . 2100 ) according to one of the preceding claims, wherein the through contact ( 250 . 255 ) Copper has. Optoelectronic semiconductor component ( 100 . 1100 . 2100 ) according to one of the preceding claims, wherein the plastic carrier ( 200 . 1200 . 2200 ) is produced by an injection molding process.

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