WO2019116853A1

WO2019116853A1 - Semiconductor device and method for manufacturing same

Info

Publication number: WO2019116853A1
Application number: PCT/JP2018/043172
Authority: WO
Inventors: 和明馬渡
Original assignee: 株式会社デンソー
Priority date: 2017-12-15
Filing date: 2018-11-22
Publication date: 2019-06-20
Also published as: JP6930412B2; JP2019109084A

Abstract

This semiconductor device is provided with a semiconductor chip (1) including a sensor portion (31) which outputs a signal corresponding to a physical quantity, and molded resin (6) covering a portion of the semiconductor chip, wherein a part of the semiconductor chip which protrudes from the molded resin is a protruding portion (3), an exposed portion (3a) of the protruding portion that is exposed from the molded resin includes a laser-removed region that is caused to be exposed from the molded resin by removing a part of the molded resin covering the protruding portion by laser irradiation, and a laser low-absorption material (7) having a absorption rate of the laser at most equal to 45% is disposed in the exposed portion of the laser-removed region.

Description

Semiconductor device and method of manufacturing the same

Cross-reference to related applications

This application is based on Japanese Patent Application No. 2017-240911 filed on Dec. 15, 2017, the contents of which are incorporated herein by reference.

The present disclosure relates to a semiconductor device including a semiconductor chip and a mold resin for sealing a part of the semiconductor chip, and a method of manufacturing the same.

Conventionally, in a semiconductor device of this type, a resin material covering a protrusion is partially removed by laser irradiation or the like for the purpose of stress relaxation in a protrusion protruding from a mold resin and removal of a resin burr in a semiconductor chip. The thing is done. As such a semiconductor device and its manufacturing method, for example, the one described in Patent Document 1 can be mentioned.

The semiconductor device described in Patent Document 1 is sealed in a mold resin together with a semiconductor chip including a sensor unit that outputs a signal according to a physical quantity, a mold resin, and a part of the semiconductor chip, and control of the semiconductor chip And a circuit chip for The semiconductor device has a structure in which a part of the semiconductor chip is covered with the mold resin, the remaining part is a protruding part protruding from the mold resin, and the semiconductor chip is cantilevered by the mold resin.

Here, in the semiconductor device of this type, with the formation of the mold resin, resin burrs are formed in the projecting portion of the semiconductor chip, and stress caused by the difference in linear expansion coefficient between the semiconductor chip and the mold resin is concentrated. To In order to solve these problems, it is performed to remove resin burrs formed on the projecting portions of the semiconductor chip and a resin material covering the projecting portions by laser irradiation or the like.

Further, in the semiconductor device of this type, the mold resin contains a filler such as SiO ₂ for the purpose of reducing the difference in linear expansion coefficient between the semiconductor chip and the mold resin and relieving stress at these interfaces. There is. As described above, when the mold resin is configured to include the filler, when removing the resin burr made of such a resin material, the filler does not pass through the laser in the laser irradiation and remains without being removed; Can reattach and contaminate the surface.

In the semiconductor device described in Patent Document 1, in order to prevent the problems as described above, a mold resin containing a filler is formed after covering a portion where resin burrs may occur with a fillerless resin not containing a filler in advance. . Thereafter, the fillerless resin is subjected to laser irradiation to remove the same, whereby the semiconductor device is obtained. Therefore, even if the mold resin is configured to include a filler, a semiconductor device in which the above-mentioned failure due to the filler is suppressed and a method of manufacturing the same are provided.

Patent No. 6090041

By the way, in this type of semiconductor device, the semiconductor chip may have a serial number, a wiring electrode, and the like formed on the surface of the protruding portion using a material such as Al. In such a case, when laser irradiation is performed in the vicinity of the protruding portion of the semiconductor chip, a material constituting the serial number or the like may be partially damaged by absorbing the laser and generating heat. However, the semiconductor device described in Patent Document 1 can not prevent damage to the projection due to such laser irradiation.

Further, in this semiconductor device, in addition to the resin material containing the filler in the manufacturing process, a fillerless resin to be disposed in a region to be irradiated with laser is separately required, and the cost is increased accordingly.

Furthermore, in the case of employing a process using a fillerless resin, when the fillerless resin is a hard material, the pressure for molding resin molding is excessive for the semiconductor chip through the hard fillerless resin when forming the molding resin. It will be transmitted to you. In such a case, due to the influence of the pressure transmitted excessively, the semiconductor chip may be left as an internal stress, which may lower the reliability.

An object of the present disclosure is to provide a semiconductor device in which damage on the surface of a protrusion is suppressed when removing a resin material in the protrusion protruding from a mold resin in a semiconductor chip, and a method of manufacturing the same. Another object of the present disclosure is to provide a semiconductor device having a configuration that can be easily manufactured without using a fillerless resin separately even though the mold resin includes the filler, and a method for manufacturing the semiconductor device.

In order to achieve the above object, a semiconductor device according to a first aspect of the present disclosure includes a semiconductor chip having a sensor unit that outputs a signal according to a physical quantity, and a mold resin that covers a part of the semiconductor chip. In such a configuration, a portion of the semiconductor chip that protrudes from the mold resin is a protrusion, and an exposed portion of the protrusion that is exposed from the mold resin is a portion of the mold resin that covers the protrusion irradiated with a laser As a result, the laser low absorption material including the laser removal area exposed from the mold resin is provided, and the exposed portion in the laser removal area has a laser absorption rate of 45% or less.

As a result, the semiconductor chip is a part of the projecting portion of the semiconductor chip that protrudes from the mold resin, and the portion exposed from the mold resin by the laser irradiation is made of the laser low absorption material, and the semiconductor chip resulting from the absorption of the laser Semiconductor device in which the damage of the

A semiconductor device according to a second aspect of the present disclosure includes a semiconductor chip having a sensor unit that outputs a signal according to a physical quantity, and a mold resin that covers a part of the semiconductor chip. In such a configuration, a portion of the semiconductor chip that protrudes from the mold resin is a protrusion, and the protrusion has a covering portion at least a part of which is covered with the mold resin, and the mold resin contains a filler. In the semiconductor chip, the normal direction to the one surface on which the covering portion is formed is the normal direction of one surface, the portion covering the covering portion in the mold resin is the thinning portion, and the filler is the normal direction on one surface of the thinning portion The particle diameter is larger than the thickness in the above, and is disposed in a portion different from the thinned portion.

As a result, while the mold resin is formed of the resin material containing the filler, the mold resin has a thinned portion in which the filler resin is not a filler-less portion, and a defect caused by the filler in the laser processing is suppressed. It becomes a semiconductor device.

A method of manufacturing a semiconductor device according to a third aspect of the present disclosure includes preparing a semiconductor chip having a sensor unit that outputs a signal according to a physical quantity, and forming a mold resin covering at least a part of the semiconductor chip. After preparing a mold to be used, setting a semiconductor chip in the mold, pouring a resin material for forming a mold resin and curing it to form a mold resin, and forming a mold resin, the semiconductor chip Among them, irradiating a part of the protrusion projecting from the mold resin with a laser to form an exposed part exposing the part from the mold resin. In such a method, when preparing a semiconductor chip, a laser low absorption material having an absorptivity of 45% or less is disposed in a portion covered by a portion of the molding resin which is irradiated and removed by the laser. Prepare a semiconductor chip.

Thereby, when removing a part of mold resin which covers a part of projection part which protrudes from mold resin among semiconductor chips by laser irradiation, the part covered with the mold resin of the said one part which is removed among semiconductor chips is It becomes a semiconductor chip comprised with laser low absorption material. Therefore, even if a part of the mold resin is irradiated with the laser to remove it, the portion of the semiconductor chip covered with the part of the mold resin is made of the laser low absorption material. Absorption is suppressed. Therefore, when removing a part of mold resin by laser irradiation, it is possible to manufacture a semiconductor device in which damage to the semiconductor chip is suppressed.

A method of manufacturing a semiconductor device according to a fourth aspect of the present disclosure includes preparing a semiconductor chip having a sensor unit that outputs a signal according to a physical quantity, and forming a mold resin covering at least a part of the semiconductor chip. Preparing a mold to be used. In such a manufacturing method, a semiconductor chip is set in a mold, and a resin material constituting a mold resin is poured and cured to form a mold resin, and to form a mold resin, a filler is contained. In preparing the die using the resin material and the portion of the semiconductor chip that protrudes from the mold resin after the formation of the mold resin as a protrusion, the gap between the die and the portion of the semiconductor chip that becomes the protrusion Prepare a mold smaller than the particle size of the filler.

Thereby, while forming mold resin using the resin material containing a filler, mold resin made into the part of a fillerless part can be formed, and the fault resulting from a filler at the time of laser processing A suppressed semiconductor device can be manufactured.

1 is a cross-sectional view showing a semiconductor device of a first embodiment. FIG. 7 is a top layout view showing a protrusion of a semiconductor chip and the vicinity thereof in the semiconductor device of the first embodiment. It is a figure which shows the laser irradiation process among the manufacturing processes of the semiconductor device of 1st Embodiment. It is a figure which shows an example of laser irradiation in the laser irradiation process following FIG. 3A. It is a figure which shows the absorptivity of Si with respect to a wavelength. Shows the absorption rate of SiO ₂ with respect to the wavelength. Shows the absorption rate the _Si 3 _{N 4} with respect to wavelength. It is a figure which shows the absorptivity of the resin material of the epoxy resin type with respect to a wavelength. It is sectional drawing which shows the semiconductor device of 2nd Embodiment. It is an expanded sectional view of the area | region shown with the broken line in FIG. It is a figure which shows an example of the particle size distribution of a filler. It is a figure shown about mold resin molding among manufacturing processes of a semiconductor device of a 2nd embodiment. It is a figure shown about mold resin molding among manufacturing processes of a semiconductor device in other embodiments. It is a figure shown about mold resin molding in the conventional semiconductor device using a metallic mold and a film.

Hereinafter, embodiments of the present disclosure will be described based on the drawings. In the following embodiments, parts that are the same as or equivalent to each other will be described with the same reference numerals.

First Embodiment
The semiconductor device S1 of the first embodiment will be described with reference to FIGS. 1 to 3 by taking as an example a case where it is applied as a pressure sensor.

2 shows an upper surface layout as viewed from the normal direction (hereinafter referred to as “one-plane normal direction”) side of the one surface 1a of the semiconductor chip 1 described later shown in FIG. The outline of the supported portion 2 covered with the mold resin 6 is indicated by a broken line by a dashed line. Further, in FIG. 2, in order to make the configuration easy to understand, a laser low absorption material to be described later is omitted while omitting a region covering a part of the semiconductor chip 1 among the semiconductor chip 1 and the molding resin 6 and other regions other than the vicinity thereof. Among them, only those separately disposed on the second substrate 12 among 7 are shown.

The semiconductor device S1 of the present embodiment includes, for example, as shown in FIG. 1, a semiconductor chip 1 having a sensor unit 31 that outputs a signal corresponding to a physical quantity, a wire 4, a lead frame 5, and a mold resin 6. Prepare. In the semiconductor device S1, the sensor unit 31 outputs an electrical signal according to the physical quantity, and the electrical signal is transmitted via a pad portion 123, a wire 4, and a lead frame 5 described later via circuit wiring (not shown) formed on the semiconductor chip 1. It is configured to be sequentially transmitted to the outside. The semiconductor device S1 of the present embodiment is applied, for example, as a pressure sensor that measures the pressure of intake air, engine oil, and the like in a vehicle such as an automobile.

In the semiconductor device S1, a semiconductor element (not shown) for controlling an electrical signal output from the sensor unit 31 is further disposed in the mold resin 6 and disposed between the semiconductor chip 1 and the lead frame 5. May be Thus, the configuration of the transmission path of the electrical signal output from the sensor unit 31 may be changed as appropriate.

As shown in FIG. 1, the semiconductor chip 1 has, for example, flat plate-like first and

second substrates

11 and 12 mainly made of a semiconductor material such as Si, and these

substrates

11 and 12 are It is made into the composition put together. As shown in FIG. 1, a part of the semiconductor chip 1 is mounted on the lead frame 5 and fixed by an adhesive such as silver paste or epoxy (not shown). In the present embodiment, as shown in FIG. 1, the semiconductor chip 1 is in a state of being partially covered and supported by the mold resin 6, that is, in a cantilever state.

In the following description, as shown in FIG. 1, a portion of the semiconductor chip 1 which is thickly covered and supported by the molding resin 6 is referred to as a “supported portion 2” and the remaining portion of the semiconductor chip 1, that is, the mold The portion protruding from the resin 6 to the opposite side of the supported portion 2 is referred to as a “projected portion 3”. Further, as shown in FIG. 2, a portion covering the portion of the mold resin 6 different from the projecting portion 3 is a “support portion 6a” and a portion covering a portion of the projecting portion 3 thinner than the supporting portion 6a. Is referred to as "thinned portion 6b". Furthermore, as shown in FIG. 2, the portion of the projecting portion 3 exposed from the mold resin 6 is “exposed portion 3 a”, and the portion of the projecting portion 3 covered by the thinned portion 6 b is “coated portion 3 b” It is called.

In the present embodiment, as shown in FIG. 2, in the semiconductor chip 1, absorption of a laser in a manufacturing process to be described later is performed on a part of one surface 1 a of the protrusion 3 opposite to the surface on which the sensor portion 31 is formed. A laser low absorption material 7 having a rate of 45% or less is disposed. In other words, a region covered by a part of the mold resin 6 which is removed by the laser processing of the semiconductor chip 1 during the period from the formation of the mold resin 6 in the manufacturing process to be described later to the laser processing Is mainly composed of the laser low absorption material 7.

Here, "the laser removal area is mainly composed of the laser low absorption material 7" means not only the case where the laser removal area is composed of only the laser low absorption material 7, but also the laser low absorption material. In addition to 7, it is the meaning also included when the unavoidable impurity, the foreign material, etc. are included.

The laser low absorption material 7 is, for example, a material having an absorptivity of 45% or less at a wavelength of 1.5 μm to 6 μm of a laser used for laser processing described later, specifically, Si, SiO ₂ , SiC, sapphire, GaN, GaAs And InP. The laser low absorption material 7 is not only used as, for example, the first substrate 11 or the second substrate 12 constituting the semiconductor chip 1, but also as a material separately disposed on the second substrate 12 as shown in FIG. Used. In the latter case, the laser low absorption material 7 covers a serial number or alignment mark (not shown) formed of a material such as Al on the surface 1 a of the protrusion 3 of the semiconductor chip 1 and protects the same. It is used as a membrane.

The semiconductor chip 1 is covered with a material having high adhesion to the mold resin 6 or a material that provides a stress relaxation effect, and the portion of the surface to which the laser is not irradiated during laser processing and the portion covered with the mold resin 6 is covered. It may be included. Examples of the material having high adhesion to the mold resin 6 include Si ₃ N ₄ and PIQ (Polyimide iso-indoloquinazo-linedione). Specifically, Si ₃ N ₄ or PIQ is disposed on a part or all of the surfaces of the supported portion 2 and the covering portion 3 b of the semiconductor chip 1, and the adhesion with the mold resin 6 is enhanced. May be

Further, the semiconductor chip 1 has an arbitrary semiconductor chip configuration except that the laser removal region is formed of the laser low absorption material 7, and the configuration other than the laser low absorption material 7 may be appropriately changed. Good.

As shown in FIG. 1, the first substrate 11 is bonded to the second substrate 12 such that one surface 11 a thereof faces the one surface 12 a side of the second substrate 12. The first substrate 11 has a first recess 111 recessed toward the first surface 11 a on the surface opposite to the first surface 11 a and has a thin portion 112 thinned by the formation of the first recess 111. The first substrate 11 is formed with a circuit wiring (not shown) extending from the thin portion 112 to the supported portion 2 side and a gauge resistor electrically connected to the first surface 11 a. The gauge resistance is formed, for example, on the thin-walled portion 112, and is deformed along with the deformation of the thin-walled portion 112, and its resistance value changes due to the piezoresistance effect.

As shown in FIG. 1, the second substrate 12 has a second recess 121 formed on one surface 12 a, and the second recess 121 is disposed so as to cover the thin portion 112. A pressure reference chamber 122 is formed by the space formed by the second recess 121 and the first substrate 11. The pressure reference chamber 122 is, for example, vacuum pressure, but may be atmospheric pressure. As described above, the sensor portion 31 is formed by the thin portion 112 of the first substrate 11 and the second concave portion 121 of the second substrate 12.

In the present embodiment, the sensor unit 31 is an element that detects pressure, and as shown in FIG. 1, the sensor unit 31 is formed in the protrusion 3 of the semiconductor chip 1. For example, when an external pressure is applied from a gas such as air or a liquid such as oil, the sensor unit 31 changes the resistance value of a gauge resistance (not shown) on the thin portion 112 and outputs an electrical signal according to the pressure. The electrical signal output from the sensor unit 31 is transmitted to the pad unit 123 of the semiconductor chip 1 through a circuit wiring (not shown) formed on the side of the first surface 11 a of the first substrate 11.

As shown in FIG. 1, the pad portion 123 is formed in a portion to be the supported portion 2 in the semiconductor chip 1 and is electrically connected to a not-shown circuit wiring on the first surface 11 a side of the first substrate 11. The pad portion 123 is made of, for example, a metal material such as Al, and as shown in FIG. 1, the inner wall of the through hole connecting one surface 12a of the second substrate 12 to the opposite surface 12b and a part of the opposite surface 12b. It is formed to cover.

The wire 4 is made of, for example, a metal material such as Au, and is connected to each of the pad portion 123 and the lead frame 5 by wire bonding as shown in FIG. 1 to electrically connect them.

The lead frame 5 is made of, for example, a metal material such as Cu, and as shown in FIG. 1, the semiconductor chip 1 is mounted on one surface and the other end opposite to the one end on which the semiconductor chip 1 is mounted. Are exposed from the mold resin 6.

The mold resin 6 is made of, for example, a resin material such as an epoxy resin, covers a part of the semiconductor chip 1, the wire 4 and a part of the lead frame 5, and is formed by transfer molding or the like.

The above is the basic configuration of the semiconductor device S1.

Next, an example of a method of manufacturing the semiconductor device S1 will be described with reference to FIGS. 3A and 3B. In FIG. 3A and FIG. 3B, as in FIG. 2, the sensor unit 31 is covered with the thinning portion 6b of the projecting portion 3 by the dashed-dotted line with an example of the portion irradiated with the laser in laser processing described later. The outline of the curved portion and the laser low absorption material 7 are shown by broken lines.

In the manufacturing process of the semiconductor device S1, an arbitrary semiconductor process can be adopted except that the laser low absorption material 7 is disposed in the portion to be the protruding portion 3 of the semiconductor chip 1, and therefore the laser low absorption material 7 is related. The steps other than the above are briefly described.

First, a semiconductor chip 1 is prepared, which is manufactured by an ordinary semiconductor process and in which the laser low absorption material 7 is disposed in a portion to be the protruding portion 3 which protrudes from the mold resin 6 later. For example, a vacuum film forming method such as vapor deposition or sputtering is performed using a mask (not shown) so as to cover a portion of the semiconductor chip 1 where the alignment mark or serial number is formed of Al in the region to be the projecting portion 3. Thus, the laser low absorption material 7 is formed.

Next, the end of the semiconductor chip 1 on the side to be the supported portion 2 is mounted on one surface of the lead frame 5 by, for example, soldering, and then the pad portion 123 of the semiconductor chip 1 and the lead frame 5 are bonded by wire bonding. Connect electrically. Then, for example, a mold (not shown) composed of an upper mold and a lower mold is prepared, and a work in which the semiconductor chip 1, the wire 4 and the lead frame 5 are integrated is set in the mold.

Subsequently, the resin material constituting the mold resin 6 is poured into the cavity of the mold and cured to form the mold resin 6 covering the semiconductor chip 1 and a part of the lead frame 5 and the wire 4.

When forming the mold resin 6, the resin material is prevented from flowing into at least the sensor portion 31 of the semiconductor chip 1. For example, another member such as a cover (not shown) which prepares a mold in which the region to be the protruding portion 3 in the opposite surface of the one surface 1a of the semiconductor chip 1 contacts the upper or lower die without a gap It may be possible to prepare it.

After forming the mold resin 6, the work is released from the mold. In the work after formation of the mold resin 6, as shown in FIG. 3A, a surplus portion (hereinafter referred to as "surplus resin 8") of the mold resin 6 covering the periphery of the protrusion 3 and the like in top view remains. Is removed by laser irradiation. Specifically, light having a wavelength at which the absorptivity of the material of the mold resin 6 is high and the absorptivity of Si mainly constituting the semiconductor chip 1 is 45% or less, for example, a wavelength of 1.5 μm to 6.0 μm Is used as a laser.

And the laser of such a wavelength is irradiated to the part which wants to remove the excessive resin 8, and this is removed. For example, when a region indicated by a two-dot chain line in FIG. 3A is irradiated with a laser, as shown in FIG. The process of this laser irradiation is repeated along the outer outline of the protrusion 3 in top view as shown by a two-dot chain line in FIG. 3B. When the excess resin 8 is removed by this laser irradiation step, the state shown in FIG. 2 is obtained. Thus, the semiconductor device S1 of the present embodiment can be manufactured.

Examples of the laser for removing the excess resin 8 include HoYAG (wavelength: about 1.5 μm) and ErYAG (wavelength: about 3 μm). The conditions for laser irradiation, such as energy density, pulse width and laser irradiation diameter, may be set appropriately as long as the excess resin 8 can be removed.

Next, a preferred wavelength range of the laser and the laser low absorption material 7 will be described with reference to FIGS. 4A to 4D.

The laser used to remove the excess resin 8 is light in a wavelength range that is well absorbed by the resin material that constitutes the mold resin 6 while not absorbed much by the laser low absorption material 7. Specifically, the wavelength of the laser is 90% or more in the range of 0.4 μm to 11 μm, as shown in FIG. From the viewpoint of removal, it may be in the range of 0.4 μm to 11 μm. On the other hand, as shown in FIG. 4A, the absorptivity of Si mainly constituting the semiconductor chip 1 is 45% or less within the range of 1.5 μm to 6 μm, and 0.4 μm to 1.5 μm and 6 μm. In the range beyond, it exceeds 45%. If the Si constituting the semiconductor chip 1 absorbs the laser excessively by more than 45%, damage due to heat generation may occur. From the viewpoint of preventing this, the wavelength of the laser is in the range of 1.5 μm to 6.0 μm. It is preferable that

For example, when the wavelength range of the laser is set to 1.5 μm to 6.0 μm, for the laser low absorption material 7, a material having an absorptivity of 45% or less in the range is selected. For example, as shown in FIG. 4B, SiO ₂ has an absorptivity of 45% or less in the range of 1.5 μm to 6.0 μm, so it can be said that it is preferable to use it as the laser low absorption material 7.

On the other hand, as shown in FIG. 4C, Si ₃ N ₄ used as the insulating film has a wavelength range in which the absorptivity exceeds 45% in the range of 1.5 μm to 6.0 μm. That is, Si ₃ N ₄ is a material which is not preferable to be used as the laser low absorption material 7 because Si ₃ N ₄ has a large absorption of light of a predetermined wavelength among lasers and may be damaged by heat generation.

The wavelength range of the laser for removing the excess resin 8 and the selection of the laser low absorption material 7 are performed from the above viewpoints. Although it has been described that the laser low absorption material 7 is preferably made of Si or SiO ₂ , it is preferable if the material has an absorptivity of 45% or less in the range of 1.5 μm to 6.0 μm. Not limited to this.

Next, an effect of forming the laser removal region of the semiconductor chip 1 with the laser low absorption material 7 will be described. In the following description, among the components of the conventional semiconductor device, those corresponding to the components of the semiconductor device S1 of the present embodiment are given the same reference numerals for convenience.

Among conventional semiconductor devices, there are semiconductor devices in which an alignment mark for alignment in the manufacturing process and a serial number of the semiconductor chip are imprinted on the surface of a portion corresponding to the protrusion 3 in the semiconductor chip 1. The serial number and the like are made of a material used in a normal semiconductor process, such as Al, but in the state of being exposed to the atmosphere, the serial number may peel off due to corrosion and the like, and thus can not be identified. In order to prevent such a situation, a material constituting a serial number or the like is usually covered with a material having corrosion resistance, for example, a material such as Si ₃ N ₄ .

However, if laser irradiation is performed on the semiconductor chip 1 having such a configuration for the purpose of removing the resin material, etc., the Si ₃ N ₄ covering the serial number etc. absorbs the laser and generates heat, and the serial number It may be destroyed every time. That is, when a material having a high absorptivity of the laser in the laser processing, for example, an absorptivity over 45% is disposed in the laser removal area, the semiconductor chip 1 may be damaged.

On the other hand, in the semiconductor device S1 of the present embodiment, since the laser removal region of the protrusion 3 is formed of the laser low absorption material 7 whose absorptivity of the laser is 45% or less, It is a structure that does not cause excessive absorption. As a result, the semiconductor device S1 can be prevented from damaging the semiconductor chip 1 in laser processing.

According to the present embodiment, the semiconductor chip 1 in which the laser removal region in the protrusion 3 is made of the laser low absorption material 7 is a semiconductor device in which damage to the semiconductor chip 1 due to laser irradiation is suppressed.

In addition, it is possible to manufacture a semiconductor device in which damage to the semiconductor chip 1 in laser processing is suppressed by preparing one of the semiconductor chips 1 in which the laser removal region is made of the laser low absorption material 7 and using this. .

Second Embodiment
The semiconductor device S2 of the second embodiment will be described with reference to FIGS. 5 to 8.

As shown in FIG. 5, in the semiconductor device S2 of the present embodiment, the mold resin 6 includes the resin 61 and the filler 62, and the filler 62 is disposed in the support portion 6a. In the semiconductor device S2, as shown in FIG. 6, the particle diameter of the filler 62 contained in the support portion 6a is larger than the thickness in the normal direction of one surface of the thinned portion 6b (hereinafter simply referred to as "thickness"). . The semiconductor device S2 is different from the first embodiment mainly in the above points. In the present embodiment, these differences will be mainly described.

In the present embodiment, the mold resin 6 includes a resin 61 and a filler 62, and a supporting portion 6a that covers and supports a portion other than the projecting portion 3 in the semiconductor device S2, and a portion of the projecting portion 3 It is comprised by the thin part 6b covered thinly. In addition, "covering thinly" here means covering with thickness thinner than the thickness of the part which covers the semiconductor chip 1 among the support parts 6a.

The resin 61 is, for example, an arbitrary resin material such as an epoxy resin.

The filler 62 has, for example, a spherical shape or a crushed shape, and is made of an inorganic material such as alumina or silica. The filler 62 is added, for example, for the purpose of adjusting the coefficient of linear expansion of the mold resin 6, the thermal conductivity, etc., and is distributed in the support portion 6a of the mold resin 6, as shown in FIG. As shown in FIG. 7, the filler 62 has a predetermined particle diameter range, for example, φ 50 μm to 200 μm, but a filler having a particle diameter larger than at least the thickness of the thinned portion 6 b is used. It is preferable that the filler 62 remove | eliminates the particle | grains whose particle size is smaller than the thickness of the thinning part 6b as shown in FIG. For example, when the thickness of the thinned portion 6 b is 50 μm, it is preferable that the filler 62 be used in which particles having a particle diameter of 50 μm or less are removed by filtration or the like. The reason for this will be described later in the description of the method of manufacturing the semiconductor device S2.

The thinned portion 6 b is mainly made of the resin 61. As shown in FIG. 6, when the thickness in the normal direction to one surface is t1 and the particle diameter of the filler 62 is t2, the thinned portion 6b has a relationship of t1 <t2. That is, the thickness of the thinned portion 6 b is less than the particle diameter of the filler 62.

Next, an example of a method of manufacturing the semiconductor device S2 will be described with reference to FIG. 8 except that the mold resin 6 includes the resin 61 and the filler 62 and the filler 62 is disposed in the support portion 6a. Is the same as in the first embodiment. Therefore, here, the process of forming the mold resin 6 containing the filler 62 will be mainly described.

A work in which the semiconductor chip 1, the wire 4 and the lead frame 5 are integrated is manufactured, and as shown in FIG. 8, a mold 200 for setting the work is prepared. Specifically, for example, as shown in FIG. 8, the first cavity 203 and the thinned portion 6b are formed by the upper mold 201 and the lower mold 202, and the supporting portion 6a of the mold resin 6 is formed. A mold 200 provided with a second cavity 204 is prepared.

Next, the resin material constituting the resin 61 and the filler 62 are prepared. At this time, the filler 62 having a particle diameter larger than the gap in the normal direction to one surface of the “upper mold 201” and the “upper die 201” in the one surface 1 a of the semiconductor chip 1 Prepare as. Then, as shown in FIG. 8, the material of the mold resin 6 is injected from the injection port (not shown) into the first cavity 203 and cured to form the mold resin 6.

At the time of forming the mold resin 6, the material of the mold resin 6 flows from the first cavity 203 side toward the second cavity 204 side. At this time, since the filler 62 has a particle diameter larger than the gap between the “boundary portion between the first cavity 203 and the second cavity 204” and the “semiconductor chip 1” in the upper mold 201, It can not enter the space on the second cavity 204 side. As a result, the filler 62 is disposed on the support portion 6 a of the mold resin 6 to be formed, but is not disposed on the thinned portion 6 b. In other words, while using the material containing the resin 61 and the filler 62, the mold resin 6 including the region partially made filler-less, that is, the thinned portion 6b is formed.

In addition, "fillerless" mentioned here is not only in the state where the filler 62 is not mixed at all, it is difficult to remove by filtration etc., and a factor such as part of the filler 62 is inevitable, etc. It is the meaning also including the state where the filler of a minute particle size exists.

Here, in the manufacturing method using the conventional fillerless resin separately, after a film made of the fillerless resin is formed on a part of the projecting portion 3 by dispenser coating, for example, the mold resin 6 is formed and the fillerless resin is laser-processed It is something to remove. However, when the film made of the fillerless resin is thickly formed, it is difficult for the laser at the time of the laser processing to reach a portion of the fillerless resin located on the protrusion 3 side, that is, a deep portion viewed from the surface of the fillerless resin. To be concerned. In addition, the temporary formation of the film made of the fillerless resin causes dimensional restriction in the subsequent step of forming the mold resin 6.

On the other hand, in the case of the method of manufacturing a semiconductor device according to the present embodiment, the portion containing the filler 62 and the portion without filler are simultaneously formed in the step of forming the mold resin 6, thus causing the above problem. There is no.

According to the present embodiment, the effects of the first embodiment can be obtained, and the thinning portion 6b selectively made filler-less in the mold resin 6 containing the filler 62 is provided, and a filler-free resin is separately used. Thus, the semiconductor device can be manufactured without manufacturing.

Further, by making the gap between the portion of the semiconductor chip 1 which constitutes the projecting portion 3 and the mold 200 smaller than the particle diameter of the filler 62 contained in the mold resin 6, the support portion 6a containing the filler 62 and Fillerless thinned portions 6b can be formed at one time. That is, since it is possible to selectively form the filler-free thinned portion 6b without separately using the filler-less resin, it is possible to manufacture a semiconductor device in which the laser removal region or the vicinity thereof is filler-less more easily than in the prior art. .

(Other embodiments)
Although the present disclosure has been described based on the examples, it is understood that the present disclosure is not limited to the examples and structures. The present disclosure also includes various modifications and variations within the equivalent range. In addition, various combinations and forms, and also other combinations and forms including only one element or more or less thereof are also within the scope and the scope of the present disclosure.

(1) In the first embodiment, the case where the thinning portion 6 b is made of the same resin material as the mold resin 6 has been described. However, for the purpose of relieving the molding pressure of the mold resin 6 on the semiconductor chip 1 and reducing the residual stress of the semiconductor chip 1, a thin film made of a low elasticity material is formed in advance to cover the portion to be the projecting portion 3 of the semiconductor chip 1. The semiconductor chip 1 may be used. Examples of the low elasticity material include polyacrylics, silicone resins and polyimides. In this case, for example, as shown in FIG. 9, it is conceivable to form the mold resin 6 using the semiconductor chip 1 on which the low elastic thin film 9 of the low elastic material is formed.

Here, as a conventional method of manufacturing a semiconductor device, as shown in FIG. 10, specifically, as shown in FIG. 9, a mold 400 and a film 500 including an upper mold 401 and a lower mold 402 are prepared. . The mold 400 includes a third cavity 403 forming the support portion 6 a of the molding resin 6 and a fourth cavity 404 for setting a portion to be the projecting portion 3 of the semiconductor chip 1. The film 500 is disposed along the inner wall of the upper mold 401, as shown in FIG. Then, the semiconductor chip 1 is set in the mold 400, and the pressure of mold alignment is applied to the portion of the semiconductor chip 1 exposed from the mold resin 6 through the film 500. As a result, transfer of the pressure for mold alignment of the mold 400 to the semiconductor chip 1 through the film 500 is relaxed, and the residual stress of the semiconductor chip 1 can be reduced. However, in this method, in addition to the mold 400, the film 500 is required separately.

Therefore, as shown in FIG. 9, when the semiconductor chip 1 is set in the mold 300 composed of the upper mold 301 and the lower mold 302 and the molds are aligned, the semiconductor chip 1 is in contact with, for example, the upper mold 301. The low elastic thin film 9 is formed. Thereby, the pressure due to the contact between the semiconductor chip 1 and the upper die 301 is relieved by the low elastic thin film 9. Therefore, even without using the film 500, it is possible to reduce the residual stress caused by the pressure of the mold alignment of the mold 300 being applied to the semiconductor chip 1 excessively, and the reliability in which the decrease in the reliability of the semiconductor chip 1 is suppressed. A highly reliable semiconductor device can be manufactured.

The low elastic thin film 9 may be partially or entirely removed by laser processing, or may be left as long as the thickness of the thin elastic film 9 has a small influence on the operation of the sensor unit 31, for example, 150 μm or less.

(2) In each of the above embodiments, an example in which one end of the semiconductor chip 1 is supported by the mold resin 6 and the other end is a free end is described as an example having a cantilever structure. However, the semiconductor chip 1 may be configured so as to be configured by the laser low absorption material 7 or separately disposed, and may not necessarily have a cantilever structure. Specifically, the semiconductor chip 1 has a structure in which one end and the other end are covered and supported by different mold resins 6, and a region between these mold resins 6 protrudes from the mold resin 6, that is, a structure It may be double-ended.

In this case, the portion of the semiconductor chip 1 covered by the mold resin 6 is the supported portion 2, and the remaining portion, that is, the portion protruding from the mold resin 6 corresponds to the protrusion 3.

(3) In each of the above embodiments, as shown in FIG. 2, a portion of the surface 1 a of the semiconductor chip 1 located on the back side of the sensor unit 31 (hereinafter referred to as “sensor back side”) is exposed from the mold resin 6 The example made into the part 3a was demonstrated. However, the sensor back side portion may be the covering portion 3 b. At this time, it is preferable that the thickness in the one surface normal direction of the thinned portion 6 b be, for example, 150 μm or less to such an extent that the operation of the sensor unit 31 is not affected. Conversely, all the protrusions 3 may be exposed from the mold resin 6.

(4) In each of the above embodiments, an example of removing a part of the mold resin 6, that is, the excess resin 8 by laser irradiation has been described. However, the present invention is not necessarily limited thereto. Good. In this case, instead of the laser low absorption material 7, a material having durability to the chemical solution used for the chemical treatment may be used. That is, in the semiconductor chip 1, an area which becomes a part of the exposed part 3 a by removing a part of the mold resin 6 in the projecting part 3, that is, an area where the mold resin removed is one of the mold resin 6 such as laser processing. A durable material may be disposed for the removal means of the part. Specifically, the durable material is the laser low absorption material 7 when the removal means is laser processing, and when the removal means is chemical treatment, the material is insoluble with respect to the chemical solution to be used. Or it is a chemical solution durable material which is hardly soluble. In the case of the chemical treatment, the mold resin removal area may be covered with the chemical durable material or may be made of the chemical durable material.

(5) In the second embodiment, the example in which the laser removal region of the semiconductor chip 1 is made of the laser low absorption material 7 and the mold resin 6 containing the filler 62 is partially made fillerless has been described. . However, in the case where the fillerless portion is left without performing the laser processing, the semiconductor chip 1 may be configured using a semiconductor chip that is not intentionally configured by the laser low absorption material 7 as a part thereof. . Even with such a configuration, while the mold resin 6 is configured to include the filler 62, the support portion 6a containing the filler 62 at one time and the thinned portion 6b of the fillerless at one time at the time of molding of the mold resin 6 collectively. Because it is formed, it can be manufactured more easily than in the prior art.

(6) In the above embodiments, the example in which the semiconductor chip 1 is a pressure sensor has been described. However, the present invention is not limited to this. The semiconductor chip 1 may be, for example, a magnetic sensor, an optical sensor, or another semiconductor sensor .

Claims

A semiconductor chip (1) having a sensor unit (31) for outputting a signal according to a physical quantity;
It is a semiconductor device provided with mold resin (6) which covers a part of said semiconductor chips,
A portion of the semiconductor chip that protrudes from the mold resin is a protrusion (3), and an exposed portion (3a) of the protrusion exposed from the mold resin is a portion of the mold resin that covers the protrusion A part is irradiated with a laser and removed to include a laser removal area exposed from the mold resin,
The semiconductor device in which the laser low absorption material (7) in which the absorptivity of the laser is 45% or less is disposed in the exposed portion in the laser removal area.
The semiconductor device according to claim 1, wherein the laser low absorption material has an absorptivity of 45% or less in a range of 1.5 μm to 6.0 μm.
The semiconductor device according to claim 2, wherein the laser low absorption material is any one of Si, SiO 2 , SiC, sapphire, GaN, GaAs and InP.
The protrusion has a covering portion (3b) at least a part of which is covered by the mold resin,
The mold resin contains a filler (62),
In the semiconductor chip, the normal direction to one surface on which the covering portion is formed is taken as a normal direction, and a portion covering the covering portion in the mold resin is used as a thinning portion (6b).
The particle size is larger than the thickness in the said 1 surface normal direction of the said thinning part, and the said filler is arrange | positioned in the part different from the said thinning part in any one of Claim 1 thru | or 3 Semiconductor device.
A semiconductor chip (1) having a sensor unit (31) for outputting a signal according to a physical quantity;
It is a semiconductor device provided with mold resin (6) which covers a part of said semiconductor chips,
In the semiconductor chip, a portion protruding from the mold resin is a protruding portion (3), and the protruding portion has a covering portion (3b) at least a part of which is covered by the molding resin.
The mold resin contains a filler (62),
In the semiconductor chip, the normal direction to one surface on which the covering portion is formed is taken as a normal direction, and a portion covering the covering portion in the mold resin is used as a thinning portion (6b).
The semiconductor device wherein the filler has a particle diameter larger than a thickness of the thinned portion in the one surface normal direction, and is disposed in a portion different from the thinned portion.
Preparing a semiconductor chip (1) having a sensor unit (31) for outputting a signal according to a physical quantity;
Preparing a mold (200) used to form a mold resin (6) covering at least a part of the semiconductor chip;
Setting the semiconductor chip in the mold, pouring a resin material constituting the mold resin into the mold resin, and curing the resin material to form the mold resin;
Exposed part (3a) which exposes the said part from the said mold resin by irradiating a part of protrusion part (3) which protrudes from the said mold resin among the said semiconductor chips after forming the said mold resin Forming, and
In preparing the semiconductor chip, a laser low absorption material (7) having an absorptivity of 45% or less is disposed in a portion of the mold resin which is covered by the portion irradiated and removed by the laser. A semiconductor device manufacturing method for preparing the semiconductor chip.
The method of manufacturing a semiconductor device according to claim 6, wherein a wavelength of the laser is in a range of 1.5 μm or more and 6.0 μm or less in forming the exposed portion.
In forming the mold resin, the resin material containing a filler (62) is used,
In preparing the mold, preparing the mold in which the gap between the mold and the portion to be the projecting portion after the formation of the mold resin in the semiconductor chip is smaller than the particle diameter of the filler. 8. A method of manufacturing a semiconductor device according to item 6 or 7.
Preparing a semiconductor chip (1) having a sensor unit (31) for outputting a signal according to a physical quantity;
Preparing a mold (200) used to form a mold resin (6) covering at least a part of the semiconductor chip;
Setting the semiconductor chip in the mold, pouring the resin material constituting the mold resin into the mold resin, and curing the resin material to form the mold resin.
In forming the mold resin, the resin material containing a filler (62) is used,
In preparing the mold with the portion protruding from the mold resin after the formation of the mold resin in the semiconductor chip as the projecting portion (3), it becomes the projection of the mold and the semiconductor chip A manufacturing method of a semiconductor device which prepares the above-mentioned metallic mold whose crevice with a part is smaller than the particle size of the filler.