WO2019112253A1 - Masque de dépôt et son procédé de fabrication - Google Patents

Masque de dépôt et son procédé de fabrication Download PDF

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Publication number
WO2019112253A1
WO2019112253A1 PCT/KR2018/015062 KR2018015062W WO2019112253A1 WO 2019112253 A1 WO2019112253 A1 WO 2019112253A1 KR 2018015062 W KR2018015062 W KR 2018015062W WO 2019112253 A1 WO2019112253 A1 WO 2019112253A1
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WIPO (PCT)
Prior art keywords
metal plate
depth
peak intensity
region
maximum value
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PCT/KR2018/015062
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English (en)
Korean (ko)
Inventor
곽정민
김해식
백지흠
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엘지이노텍 주식회사
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Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020227027739A priority Critical patent/KR102621183B1/ko
Priority to KR1020207015990A priority patent/KR102435341B1/ko
Priority to KR1020227039180A priority patent/KR20220154846A/ko
Priority to CN201880078596.3A priority patent/CN111433932B/zh
Priority to CN202410059773.0A priority patent/CN117998943A/zh
Priority to KR1020227027745A priority patent/KR102542819B1/ko
Publication of WO2019112253A1 publication Critical patent/WO2019112253A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C23F1/04—Chemical milling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

Definitions

  • the present invention relates to a deposition mask capable of improving deposition efficiency by uniformly formed through-holes in the deposition of OLED pixels, and a method of manufacturing the same.
  • Display devices are used in various devices. For example, display devices are used not only for small devices such as smart phones and tablet PCs, but also for large devices such as TVs, monitors, public displays (PDs) and the like. Particularly, in recent years, there is an increasing demand for ultrahigh resolution UHD (UHD, UHD) of about 500 PPI (pixel per inch) or higher, and high resolution display devices are being applied to small devices and large devices. Accordingly, there is a growing interest in techniques for implementing low power and high resolution.
  • UHD ultrahigh resolution UHD
  • PPI pixel per inch
  • a commonly used display device can be roughly divided into an LCD (Liquid Crystal Display) and an OLED (Organic Light Emitting Diode) according to a driving method.
  • LCD Liquid Crystal Display
  • OLED Organic Light Emitting Diode
  • An LCD is a display device driven using a liquid crystal.
  • the LCD has a structure in which a light source including a cold cathode fluorescent lamp (CCFL) or a light emitting diode (LED) is disposed under the liquid crystal. And is driven by adjusting the amount of light emitted from the light source using the liquid crystal disposed.
  • CCFL cold cathode fluorescent lamp
  • LED light emitting diode
  • the OLED is a display device which is driven using organic materials, and a separate light source is not required, and the organic material itself can function as a light source and can be driven with low power.
  • OLEDs are attracting attention as a display device capable of expressing an infinite contrast ratio, having a response speed that is about 1000 times faster than that of an LCD, and excellent viewing angle, thereby being able to replace an LCD.
  • the organic material contained in the light emitting layer in the OLED can be deposited on the substrate by a deposition mask called a fine metal mask (FMM), and the deposited organic material corresponds to a pattern formed on the deposition mask Pattern to form a pixel.
  • the deposition mask includes through holes formed at positions corresponding to the pixel patterns, and red, green, and blue organic materials can be deposited on the substrate through the through holes. have.
  • a pixel pattern can be formed on the substrate.
  • the vapor deposition mask may be made of a metal plate made of iron (Fe) and nickel (Ni) alloy.
  • the vapor deposition mask can be made of an iron-nickel alloy called invar.
  • the vapor deposition mask may include a through-hole for depositing an organic material as described above, and the through-hole may be formed by an etching process.
  • the etching process for forming the through holes may be a process for etching the surface of the metal plate.
  • the surface of the metal plate may include materials in various states, and the etching characteristics may vary depending on the materials.
  • the surface material of the metal plate may vary according to the atomic concentration contained in the surface of the metal plate, so that the surface of the metal plate may not be uniformly etched. Accordingly, there is a problem that the characteristics such as the diameter, the shape, and the depth of the through holes formed on the surface of the metal plate are not uniform, thereby reducing the amount of organic substances passing through the through holes, thereby lowering the deposition efficiency .
  • the organic material deposited on the substrate is also not uniform, resulting in a problem of poor deposition.
  • the embodiments are directed to a method for improving both the thickness and the quality of the oxide film of the metal plate to improve the adhesion between the metal plate and the photoresist and to improve the etching quality of the through hole.
  • Embodiments provide an evaporation mask capable of controlling the atomic concentration at a depth of about 50 nm or less from the surface of the metal plate formed on the surface and controlling the thickness of the oxide film formed on the surface of the metal plate and a method for manufacturing the same .
  • the embodiment is intended to provide a vapor deposition mask having uniform through holes.
  • the embodiment is to provide a vapor deposition mask which can uniformly form a small-sized hole and a large-sized hole and improve the uniformity and accuracy of the small hole and the through hole communicating with the opposite hole, and a method for manufacturing the same.
  • the embodiment relates to a metal plate of an iron (Fe) -nickel alloy used for manufacturing an evaporation mask for OLED pixel deposition, wherein a maximum value of the iron (Fe) atom concentration in a depth region of 15 nm from the surface of the metal plate
  • the maximum value of the concentration of nickel (Ni) atoms is 25at% or less
  • the maximum value of the concentration of oxygen (O) atoms is 55at% to 65at%.
  • the embodiment is directed to an evaporation mask including an iron (Fe) -nickel (Ni) alloy metal material for OLED pixel deposition, wherein the evaporation mask comprises a deposition region for deposition and a non- Wherein the deposition area includes a plurality of effective areas and a non-effective area other than the effective areas, wherein the effective area includes a plurality of small surface holes formed on one surface of the metal material, A plurality of through holes formed to communicate with the face-to-face holes, and an island portion formed on the other face of the metal material and positioned between the through holes, wherein the non-evaporated region, Or at least one of the island portions has a maximum value of the iron (Fe) atom concentration in the depth region from the surface of the metallic material to 15 nm is 40 at% or less, The maximum value of nickel (Ni) atom concentration is 25at% or less, and the maximum value of oxygen (O) atom concentration is 55at% to 65at%.
  • the deposition area includes a pluralit
  • the present invention also relates to a method of manufacturing an evaporation mask for OLED pixel deposition, comprising the steps of preparing a metal plate, surface-treating the metal plate, disposing a first photoresist layer on one surface of the metal plate, Patterning the first photoresist layer, forming a first groove on one side of the metal plate through an open portion of the patterned first photoresist layer, forming a first groove on the other side of the metal plate, Disposing a photoresist layer, patterning the second photoresist layer, forming a second groove through the open portion of the patterned second photoresist layer, and forming the first groove and the second groove in communication Thereby forming a through-hole.
  • the embodiment can improve both the thickness and the quality of the oxide film of the metal plate to improve the quality of the vapor deposition mask.
  • the deposition mask according to the embodiment may include an oxide film having an oxygen atom concentration of 5 at% or more, and the thickness of the oxide film may be about 40 nm or more from the surface.
  • the surface may include iron oxide and nickel hydroxide.
  • the mask for vapor deposition according to the embodiment can form the through holes precisely and uniformly. Accordingly, it is possible to uniformly deposit an OLED pixel pattern having a resolution of 400 PPI or more and an ultrahigh resolution of 800 PPI or more.
  • FIG. 1 is a sectional view of a metal plate according to an embodiment.
  • FIG. 2 is a graph showing an X-ray elemental analysis of the surface of a metal plate, which is a base material of the vapor deposition mask according to the embodiment.
  • FIGS. 3 to 4 are graphs showing the analysis of iron (Fe) characteristics of the surface of the metal plate using X-ray element analysis.
  • 5 to 6 are graphs showing graphs of analysis of nickel (Ni) characteristics on the surface of a metal plate using X-ray element analysis.
  • FIG. 7 to 9 are conceptual diagrams illustrating a process of depositing an organic material on a substrate using the deposition mask according to the embodiment.
  • FIG. 10 is a plan view of a vapor deposition mask according to an embodiment.
  • FIG. 11 is a plan view showing an effective part of the vapor deposition mask according to the embodiment.
  • FIG. 12 is a photomicrograph of the effective portion of the vapor deposition mask according to the embodiment viewed from a plane.
  • FIG 13 is another plan view of the vapor deposition mask according to the embodiment.
  • FIG. 14 is a cross-sectional view taken along the line A-A 'in FIG. 11 or 12 and a cross-sectional view taken along the line B-B' in FIG.
  • 16 is a view showing a manufacturing process of a vapor deposition mask according to an embodiment.
  • 17 and 18 are views showing a deposition pattern formed through the deposition mask according to the embodiment.
  • 19 is a graph showing an X-ray elemental analysis of the surface of a metal plate according to a comparative example.
  • FIG. 20 is a graph showing graphs for comparing surface iron (Fe) characteristics of the metal sheet according to the examples and the comparative examples.
  • FIG. 21 is a graph showing graphs for comparing surface nickel (Fe) characteristics of a metal plate according to Examples and Comparative Examples.
  • FIG. 21 is a graph showing graphs for comparing surface nickel (Fe) characteristics of a metal plate according to Examples and Comparative Examples.
  • 22 and 23 are photomicrographs taken from a plane view of a small-sized hole of an evacuation mask according to Examples and Comparative Examples.
  • each layer (film), area, pattern or structure may be referred to as being “on” or “under / under quot; under " includes all that is formed directly or through another layer.
  • the criteria for top / bottom or bottom / bottom of each layer are described with reference to the drawings.
  • the vapor deposition mask can be manufactured using a metal plate as a raw material. Before describing the vapor deposition mask, the metal plate will be described first.
  • FIG. 1 is a cross-sectional view of a metal plate 10 which is a raw material of a mask for vapor deposition 100 according to an embodiment.
  • the metal plate 10 may include a metal material.
  • the metal plate 10 may include a nickel (Ni) alloy.
  • the metal plate 10 may include iron (Fe) and nickel (Ni) alloy. More specifically, the metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr).
  • the metal plate 10 may include about 60% to about 65% by weight of the iron, and the nickel may include about 35% to about 40% by weight.
  • the metal plate 10 may include about 63.5 wt% to about 64.5 wt% of iron, and the nickel may include about 35.5 wt% to about 36.5 wt%.
  • the content, weight and% by weight of the metal sheet 10 can be determined by selecting a specific area a * b on the plane of the metal sheet 10 and measuring a specimen a * b corresponding to the thickness t of the metal sheet 10, b * t) is sampled and dissolved in strong acid, etc., and the weight% of each component is examined.
  • the examples are not limited thereto and the content can be confirmed by various methods.
  • the metal plate 10 may include a small amount of carbon, silicon, sulfur, phosphorus, manganese, titanium, cobalt, copper, May further include at least one or more elements of silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb).
  • a small amount may mean not more than 1% by weight.
  • the metal plate 10 may include Invar.
  • the Invar is an alloy including iron and nickel and is a low thermal expansion alloy having a thermal expansion coefficient close to zero. That is, since the Invar has a very small thermal expansion coefficient, it is used in precision parts such as masks and precision instruments. Therefore, the vapor deposition mask manufactured using the metal plate 10 can have improved reliability, can prevent deformation, and can also increase the lifetime.
  • the metal plate 10 including the iron-nickel alloy described above can be manufactured by a cold rolling method.
  • the metal plate 10 can be formed through melting, forging, hot rolling, normalizing, primary cold rolling, primary annealing, secondary cold rolling and secondary annealing, have. Alternatively, it may have a thickness of 30 mu m or less through an additional thickness reduction process other than the above processes.
  • the metal plate 10 may have a rectangular shape.
  • the metal plate 10 may have a rectangular shape having a major axis and a minor axis, and may have a thickness of about 30 ⁇ or less.
  • the metal plate 10 may include an outer portion SP including a surface and an inner portion other than the outer portion SP.
  • the surface may refer to one surface of the metal plate 10 and a surface of the other surface.
  • the outer portion SP can mean a depth of about 30 nm or less from each surface.
  • the atomic concentration of the outer portion SP of the metal plate 10 may be different from the atomic concentration of the inner portion IP of the metal plate 10.
  • the metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr) atoms.
  • the outer portion including the surface of the metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr) atoms.
  • the type and atomic concentration of atoms contained in the metal plate 10 can be confirmed by X-ray photoelectron spectroscopy (XPS).
  • X-ray elemental analysis method is one of electron spectroscopy methods, and an element can be analyzed using an X-ray source.
  • photoelectrons are emitted to the outside of the material, and the kinetic energy thereof reflects the magnitude of the binding energy at the original position of the atoms constituting the material, And so on.
  • the maximum value in the content to be described later may mean the maximum value among the atom concentrations measured using the above X-ray element analysis method.
  • the component according to the atomic concentration and depth of the metal plate 10 was analyzed using an XPS equipment (manufactured by ULVAL-PHI).
  • the X-ray incident angle was 90 degrees and the photoelectron take-in angle was 40 degrees.
  • the atomic concentration according to the depth of the outer portion SP of the metal plate 10 can be known.
  • the X axis in the figure denotes a sputter time (Min) and the Y axis denotes atom concentration (atom%).
  • the sputtering time of 0.5 minutes may mean that the surface of the metal plate 10 is sputtered for 0.5 minutes, and may be measured at a depth of about 5 nm from the surface.
  • the sputtering time of 1 minute may mean that the surface of the metal plate 10 is sputtered for 1 minute, and may be measured at a depth of about 10 nm from the surface.
  • the XPS instrument can measure the atomic concentration contained within the range of 0.4 nm to about 5 nm from the measurement point described above, so that when the measurement point is about 10 nm from the surface, the atom from about 10 nm depth to about 15 nm depth
  • the concentration can be analyzed. That is, when a specific point is measured, the atomic concentration can be analyzed from the measurement point to a depth of about +5 nm.
  • the atom concentration of the metal plate 10 may be defined as a first region from a depth of about 5 nm to a depth of about 10 nm based on the surface of the metal plate 10, A depth from a depth of about 10 nm to a depth of about 15 nm may be defined as a second area, and a depth from about 15 nm to about 20 nm may be defined as a third area.
  • a fourth region from a depth of about 20 nm to a depth of about 25 nm may be defined as a fourth region with respect to a surface of the metal plate 10 and a region from a depth of about 25 nm to a depth of about 30 nm And a sixth region from a depth of about 30 nm to a depth of about 35 nm based on the surface can be defined.
  • a region from a depth of about 35 nm to a depth of about 40 nm may be defined as a seventh region with respect to the surface of the metal plate 10.
  • a region from a depth of about 40 nm to a depth of about 45 nm as the surface may be defined as an eighth region
  • a ninth region from a depth of about 45 nm to a depth of about 50 nm based on the surface can be defined.
  • the atomic concentration of iron contained in the outer portion SP of the metal plate 10 may vary depending on the depth.
  • the maximum value of the iron atom concentration in the outer portion SP of the metal plate 10 may be about 60 at% or less.
  • the maximum value of the iron atom concentration in the depth range from the surface of the metal plate 10 to about 40 nm may be about 60 at% or less.
  • the surface of the metal plate 10 When the surface of the metal plate 10 is sputtered for 0.5 minutes, it means that the surface of the metal plate 10 is sputtered to about 5 nm from the surface of the metal plate 10.
  • the sputtering may be performed at about 5 nm from the start point of sputtering, Atomic concentrations at depths of up to 5 nm can be analyzed. That is, the iron atom concentration value from the surface to about 10 nm or less can be known.
  • the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 10 nm may be about 30 at% or less.
  • the maximum value of the iron atom concentration at a depth of about 5 nm to about 10 nm, for example, at the depth of the first region, relative to the surface may be about 30 at% or less. More specifically, the maximum value of the iron atom concentration from about 5 nm depth to about 10 nm depth (first region) from the surface can be about 25 at% to about 30 at%.
  • the surface of the metal plate 10 When the surface of the metal plate 10 is sputtered for 1 minute, it means that the surface of the metal plate 10 is sputtered to about 10 nm from the surface of the metal plate 10.
  • the sputtering can be performed at about 10 nm from the start point of sputtering, Atomic concentrations at depths of up to 5 nm can be analyzed. That is, the iron atom concentration value from the depth of about 10 nm to the depth of about 15 nm (second area) from the surface can be known.
  • the maximum value of the iron atom concentration in the depth range from the surface of the metal plate 10 to about 15 nm may be about 40 at% or less.
  • the maximum value of the iron atom concentration at a depth of about 10 nm to about 15 nm, for example at the depth of the second region, relative to the surface can be about 40 at% or less. More specifically, the maximum value of the iron atom concentration from a depth of about 10 nm to a depth of about 15 nm (second region) can be about 30 at% to about 40 at%. More specifically, the maximum value of the iron atom concentration from a depth of about 10 nm to a depth of about 15 nm (second region) from the surface may be about 32 at% to about 38 at%. More specifically, the maximum value of the iron atom concentration from a depth of about 10 nm to a depth of about 15 nm (second region) from the surface may be about 33 at% to about 36 at% or less.
  • the surface of the metal plate 10 is sputtered for 1.5 minutes, it means that the surface of the metal plate 10 is sputtered to about 15 nm from the surface of the metal plate 10.
  • the sputtering can be performed at about 15 nm from the start point of sputtering, Atomic concentrations at depths of up to 5 nm can be analyzed. That is, the iron atom concentration value from a depth of about 15 nm to a depth of about 20 nm (third area) from the surface can be known.
  • the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 20 nm may be about 45 at% or less.
  • the maximum value of the iron atom concentration at a depth from about 15 nm to about 20 nm, e.g., at a depth of the third region, relative to the surface can be about 45 at% or less. More specifically, the maximum value of the iron atom concentration from a depth of about 15 nm to a depth of about 20 nm (third region) from the surface may be about 40 at% to about 45 at%.
  • the surface of the metal plate 10 When the surface of the metal plate 10 is sputtered for 2 minutes, it means that the surface of the metal plate 10 is sputtered to about 20 nm from the surface of the metal plate 10, and from the starting point of about 20 nm after sputtering, Atomic concentrations at depths of up to 5 nm can be analyzed. That is, the iron atom concentration value from the depth of about 20 nm to the depth of about 25 nm (fourth region) from the surface can be known. The maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 25 nm may be about 55 at% or less.
  • the maximum value of the iron atom concentration at a depth from about 20 nm to about 25 nm, for example, at the depth of the fourth region, relative to the surface can be about 55 at% or less. More specifically, the maximum value of the iron atom concentration from a depth of about 20 nm to a depth of about 25 nm (fourth region) from the surface may be about 45 at% to about 55 at%. More specifically, the maximum value of the iron atom concentration from a depth of about 20 nm to a depth of about 25 nm (fourth region) from the surface can be about 47 at% to about 50 at%.
  • the surface of the metal plate 10 is sputtered for 2.5 minutes, it means that the surface of the metal plate 10 is sputtered to about 25 nm from the surface of the metal plate 10.
  • the sputtering can be performed at about 25 nm from the start point of sputtering, Atomic concentrations at depths of up to 5 nm can be analyzed. That is, the iron atom concentration value from the depth of about 25 nm to the depth of about 30 nm (the fifth region) from the surface can be known.
  • the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 30 nm may be about 55 at% or less.
  • the maximum value of the iron atom concentration at a depth of about 25 nm to about 30 nm, e.g., at a depth of the fifth region, relative to the surface can be about 55 at% or less. More specifically, the maximum value of the iron atom concentration from about 25 nm depth to about 30 nm depth (fifth region) from the surface can be about 50 at% to about 55 at%.
  • the surface of the metal plate 10 is sputtered for 3 minutes, it means that the surface of the metal plate 10 is sputtered to about 30 nm from the surface of the metal plate 10.
  • the sputtering can be performed from the starting point point Atomic concentrations at depths of up to about 5 nm can be analyzed. That is, the iron atom concentration value from the depth of about 30 nm to the depth of about 35 nm (sixth region) from the surface can be known.
  • the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 35 nm may be about 55 at% or less.
  • the maximum value of the iron atom concentration at a depth from about 30 nm to about 35 nm, e.g., at a depth of the sixth region, relative to the surface may be about 55 at% or less. More specifically, the maximum value of the iron atom concentration from about 30 nm depth to about 35 nm depth (sixth region) from the surface can be about 50 at% to about 55 at%.
  • the iron atom concentration in the outer portion SP of the metal plate 10 may vary.
  • the iron atom concentration at the outer portion SP of the metal plate 10 may gradually increase as it is deeper from the surface.
  • the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 15 nm is larger than the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 10 nm .
  • the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 20 nm is larger than the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 15 nm .
  • the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 25 nm is larger than the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 20 nm .
  • the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 30 nm is larger than the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 25 nm .
  • the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 35 nm is larger than the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 30 nm . That is, the iron atom concentration may gradually increase as the depth of the outer portion SP of the metal plate 10 increases.
  • the nickel atom concentration according to the surface depth of the metal plate 10 will be described.
  • the concentration of nickel atoms contained in the outer portion SP of the metal plate 10 may vary depending on the depth.
  • the maximum value of the nickel atom concentration in the outer portion SP of the metal plate 10 may be about 40 at% or less.
  • the maximum value of the nickel atom concentration in the depth region from the surface of the metal plate 10 to about 40 nm can be about 40 at% or less.
  • the maximum value of the nickel atom concentration in the depth region from the surface of the metal plate 10 to about 10 nm may be about 10 at% or less.
  • the maximum value of the nickel atom concentration at a depth of about 5 nm to about 10 nm, for example, at a depth of the first region, relative to the surface may be about 10 at% or less. More specifically, the maximum value of the nickel atom concentration from about 5 nm depth to about 10 nm depth (first region) from the surface can be about 5 at% to about 10 at%.
  • the maximum value of the nickel atom concentration in the depth region from the surface of the metal plate 10 to about 15 nm may be about 25 at% or less.
  • the maximum value of the nickel atom concentration at a depth from about 10 nm to about 15 nm, e.g., at a depth of the second region, relative to the surface can be about 25 at% or less.
  • the maximum value of the nickel atom concentration from about 10 nm depth to about 15 nm depth (second region) from the surface can be between 15 at% and about 25 at%.
  • the maximum value of the concentration of nickel atoms from about 10 nm depth to about 15 nm depth (second region) from the surface can be about 18 at% to about 22 at%.
  • the maximum value of the nickel atom concentration in the depth region from the surface of the metal plate 10 to about 20 nm may be about 40 at% or less.
  • the maximum value of the nickel atom concentration at a depth of about 15 nm to about 20 nm, e.g., at a depth of the third region, relative to the surface can be about 40 at% or less.
  • the maximum value of the nickel atom concentration from a depth of about 15 nm to a depth of about 20 nm (third region) from the surface may be about 35 at% or less.
  • the maximum value of the nickel atom concentration from about 15 nm depth to about 20 nm depth (third region) from the surface can be about 30 at% to about 35 at%.
  • the maximum value of the nickel atom concentration in the depth region from the surface of the metal plate 10 to about 25 nm may be about 40 at% or less.
  • the maximum value of the nickel atom concentration at a depth of about 25 nm from the surface can be about 35 at% or less.
  • the maximum value of the nickel atom concentration at a depth from about 20 nm depth to about 25 nm relative to the surface, such as a depth of the fourth region may be less than about 35 at%.
  • the maximum value of the concentration of nickel atoms from a depth of about 20 nm to a depth of about 25 nm (fourth region) from the surface can be about 30 at% to about 35 at%.
  • the maximum value of the nickel atom concentration in the depth region from the surface of the metal plate 10 to about 30 nm may be about 40 at% or less.
  • the maximum value of the nickel atom concentration at a depth of about 30 nm or less from the surface may be about 30 at% to about 38 at%.
  • the maximum value of the nickel atom concentration at a depth of about 25 nm to about 30 nm, e.g., at a depth of the fifth region, relative to the surface may be about 30 at% to about 38 at%. More specifically, the maximum value of the nickel atom concentration from about 25 nm depth to about 30 nm depth (fifth region) from the surface can be about 33 at% to about 37 at%.
  • the maximum value of the nickel atom concentration in the depth region from the surface of the metal plate 10 to about 35 nm may be about 40 at% or less.
  • the maximum value of the nickel atom concentration at a depth of about 35 nm from the surface can be about 30 at% to about 38 at%.
  • the maximum value of the nickel atom concentration at a depth of from about 30 nm depth to about 35 nm relative to the surface, such as a depth of the sixth region may be about 30 at% to about 38 at%.
  • the maximum value of the concentration of nickel atoms from about 30 nm depth to about 35 nm depth (sixth region) from the surface can be about 33 at% to about 36 at%.
  • the concentration of nickel atoms in the outer portion SP of the metal plate 10 may vary.
  • the maximum value of the nickel atom concentration in the depth region from the surface of the metal plate 10 to about 15 nm is larger than the maximum value of the nickel atom concentration in the depth region from the surface of the metal plate 10 to about 10 nm .
  • the maximum value of the nickel atom concentration in the depth region from the surface of the metal plate 10 to about 20 nm is larger than the maximum value of the nickel atom concentration in the depth region from the surface of the metal plate 10 to about 15 nm . That is, the nickel atom concentration may gradually increase as the depth of the nickel atom from the surface of the metal plate 10 reaches about 20 nm or less.
  • the concentration of oxygen atoms contained in the outer portion SP of the metal plate 10 may be different depending on the depth.
  • the maximum value of the oxygen atom concentration in the outer portion SP of the metal plate 10 may be about 55 at% or more.
  • the maximum value of the oxygen atom concentration in the depth region from the surface of the metal plate 10 to about 40 nm may be about 55 at% or more.
  • the maximum value of the oxygen atom concentration in the depth region from the surface of the metal plate 10 to about 10 nm may be about 65 at% or less.
  • the maximum value of the oxygen atom concentration at a depth of about 5 nm to about 10 nm, for example, at a depth of the first region, based on the surface of the metal plate 10 may be about 65 at% or less. More specifically, the maximum value of the oxygen atom concentration from about 5 nm depth to about 10 nm depth (first region) from the surface can be about 55 at% to about 65 at%.
  • the maximum value of the oxygen atom concentration in the depth region from the surface of the metal plate 10 to about 15 nm may be about 65 at% or less.
  • the maximum value of the oxygen atom concentration at a depth of about 15 nm from the surface can be about 55 at% to about 65 at%.
  • the maximum value of the oxygen atom concentration at a depth of about 10 nm to about 15 nm, for example, at a depth of the second region, based on the surface of the metal plate 10 may be about 65 at% or less.
  • the maximum value of the oxygen atom concentration from a depth of about 10 nm to a depth of about 15 nm (second region) from the surface may be about 40 at% or more.
  • the maximum value of the oxygen atom concentration from about 10 nm depth to about 15 nm depth (second region) from the surface can be about 40 at% to about 65 at%. More specifically, the maximum value of the oxygen atom concentration from about 10 nm depth to about 15 nm depth (second region) from the surface can be about 40 at% to about 45 at%.
  • the maximum value of the oxygen atom concentration in the depth region from the surface of the metal plate 10 to about 20 nm may be about 65 at% or less.
  • the maximum value of the oxygen atom concentration at a depth of about 15 nm to about 20 nm, for example, at a depth of the third region, based on the surface of the metal plate 10 may be about 65 at% or less.
  • the maximum value of the oxygen atom concentration from a depth of about 15 nm to a depth of about 20 nm (third region) from the surface may be about 20 at% or more. More specifically, the maximum value of the oxygen atom concentration from about 15 nm depth to about 20 nm depth (third region) from the surface can be about 20 at% to about 50 at%. More specifically, the maximum value of the oxygen atom concentration from about 15 nm depth to about 20 nm depth (third region) from the surface can be about 22 at% to about 27 at%.
  • the maximum value of the oxygen atom concentration in the depth region from the surface of the metal plate 10 to about 25 nm may be about 65 at% or less.
  • the maximum value of the oxygen atom concentration at a depth of about 20 nm to about 25 nm, for example, at a depth of the fourth region, based on the surface of the metal plate 10 may be about 65 at% or less.
  • the maximum value of the oxygen atom concentration from a depth of about 20 nm from the surface to a depth of about 25 nm (fourth area) may be about 10 at% or more.
  • the maximum value of the oxygen atom concentration from a depth of about 20 nm to a depth of about 25 nm (fourth region) from the surface may be about 10 at% to about 30 at%. More specifically, the maximum value of the oxygen atom concentration from a depth of about 20 nm to a depth of about 25 nm (fourth region) from the surface may be about 15 at% to about 20 at%.
  • the maximum value of the oxygen atom concentration in the depth region from the surface of the metal plate 10 to about 30 nm may be about 65 at% or less.
  • a depth of about 25 nm to about 30 nm from the surface of the metal plate 10, for example, the maximum value of the oxygen atom concentration in the fifth region may be about 65 at% or less.
  • the maximum value of the oxygen atom concentration from a depth of about 25 nm to a depth of about 30 nm (fifth region) from the surface may be about 10 at% or more. More specifically, the maximum value of the oxygen atom concentration from about 25 nm depth to about 30 nm depth (fifth region) from the surface can be about 10 at% to about 30 at%. More specifically, the maximum value of the oxygen atom concentration from about 25 nm depth to about 30 nm depth (fifth region) from the surface can be about 10 at% to about 15 at%.
  • the maximum value of the oxygen atom concentration in the depth region from the surface of the metal plate 10 to about 35 nm may be about 65 at% or less.
  • the maximum value of the oxygen atom concentration at a depth of about 30 nm to about 35 nm, for example, at a depth of the sixth region, based on the surface of the metal plate 10 may be about 65 at% or less.
  • the maximum value of the oxygen atom concentration from a depth of about 30 nm to a depth of about 35 nm (sixth region) from the surface may be about 5 at% or more.
  • the maximum value of the oxygen atom concentration from a depth of about 30 nm to a depth of about 35 nm (sixth region) from the surface may be about 5 at% to about 15 at%. More specifically, the maximum value of the oxygen atom concentration from about 30 nm depth to about 35 nm depth (sixth region) from the surface can be about 5 at% to about 10 at%.
  • the maximum value of the oxygen atom concentration in the depth region from the surface of the metal plate 10 to about 50 nm may be about 65 at% or less.
  • the maximum value of the oxygen atom concentration at the depth of the region 9 may be about 65 at% or less.
  • the maximum value of the oxygen atom concentration at the depths of the seventh to ninth regions may be about 10 at% or less. More specifically, the maximum value of the oxygen atom concentration at the depth of the seventh to ninth regions may be about 5 at% to about 10 at%.
  • the oxygen atom concentration in the outer portion SP of the metal plate 10 may have a maximum value in a depth region from the surface to about 15 nm. In detail, it may have a maximum value at a depth of about 8 nm to about 12 nm from the surface.
  • the oxygen atom concentration at the outer portion SP of the metal plate 10 may vary.
  • the maximum value of the oxygen atoms in the depth region from the surface of the metal plate 10 to about 10 nm is the maximum value of the oxygen atoms in the depth region from the depth of about 10 nm to about 15 nm from the surface of the metal plate 10 .
  • the maximum value of the oxygen atoms in the depth region from the depth of about 10 nm to about 15 nm from the surface of the metal plate 10 is less than the oxygen amount in the depth region from about 15 nm to about 20 nm from the surface of the metal plate 10 Can be greater than the maximum value of the atom.
  • the maximum value of the oxygen atoms in the depth region from the depth of about 15 nm to about 20 nm from the surface of the metal plate 10 is the oxygen concentration in the depth region from about 20 nm to about 25 nm from the surface of the metal plate 10 Can be greater than the maximum value of the atom.
  • the maximum value of the oxygen atoms in the depth region from the depth of about 20 nm to about 25 nm from the surface of the metal plate 10 is the maximum value of the oxygen in the depth region from about 25 nm to about 30 nm from the surface of the metal plate 10 Can be greater than the maximum value of the atom.
  • the maximum value of the oxygen atoms in the depth region from the depth of about 25 nm to about 30 nm from the surface of the metal plate 10 is the maximum value of the oxygen in the depth region from about 30 nm depth to about 35 nm from the surface of the metal plate 10 Can be greater than the maximum value of the atom.
  • the maximum value of the oxygen atoms in the depth region from the depth of about 30 nm to about 35 nm from the surface of the metal plate 10 is the maximum value of oxygen in the depth region from about 35 nm depth to about 40 nm from the surface of the metal plate 10 Can be greater than the maximum value of the atom.
  • the maximum value of the oxygen atoms in the depth region from the depth of about 35 nm to about 40 nm from the surface of the metal plate 10 is the oxygen concentration in the depth region from about 40 nm depth to about 45 nm from the surface of the metal sheet 10 Can be greater than the maximum value of the atom.
  • the maximum value of the oxygen atoms in the depth region from the depth of about 40 nm to about 45 nm from the surface of the metal plate 10 is the oxygen concentration in the depth region from about 45 nm to about 50 nm from the surface of the metal plate 10 Can be greater than the maximum value of the atom. That is, the oxygen atom concentration may gradually decrease from the depth of about 5 nm or more from the surface of the metal plate 10 to the depth.
  • the carbon atom concentration according to the surface depth of the metal plate 10 will be described with reference to Fig. Referring to FIG. 2, the carbon atom concentration included in the outer portion SP of the metal plate 10 may vary depending on the depth.
  • the maximum value of the carbon atom concentration in the depth region from the surface of the metal plate 10 to about 10 nm may be about 35 at% or less.
  • the maximum value of the carbon atom concentration at a depth of about 5 nm to about 10 nm, for example, at a depth of the first region, based on the surface of the metal plate 10 may be about 35 at% or less.
  • the maximum value of the carbon atom concentration from a depth of about 5 nm to a depth of about 10 nm (first region) from the surface may be about 10 at% or less.
  • the maximum value of the carbon atom concentration in the depth region from the surface of the metal plate 10 to about 15 nm may be about 35 at% or less.
  • the maximum value of the carbon atom concentration at a depth of about 10 nm to about 15 nm, for example, at a depth of the second region, relative to the surface may be about 35 at% or less.
  • the maximum value of the carbon atom concentration from a depth of about 10 nm to a depth of about 15 nm (second region) from the surface may be about 5 at% or less.
  • the maximum value of the carbon atom concentration in the depth region from the surface of the metal plate 10 to about 20 nm may be about 35 at% or less.
  • the maximum value of the carbon atom concentration at a depth of about 15 nm to about 20 nm, for example, at a depth of the third region, based on the surface may be about 35 at% or less. More specifically, the maximum value of the carbon atom concentration from a depth of about 15 nm to a depth of about 20 nm (third region) from the surface may be about 5 at% or less.
  • the carbon atom concentration in the outer portion SP of the metal plate 10 may vary.
  • the maximum value of the carbon atom concentration in the depth region of about 10 nm or less from the surface of the metal plate 10 is a value of the carbon atom concentration in the depth region from about 10 nm to about 15 nm from the surface of the metal plate 10 May be greater than the maximum value.
  • the maximum value of the carbon atom concentration in the depth region from the depth of about 10 nm to about 15 nm from the surface of the metal plate 10 is preferably the depth of the depth region from about 15 nm to about 20 nm from the surface of the metal plate 10 May be greater than the maximum value of the carbon atom concentration. That is, the carbon atom concentration can be gradually reduced as the depth of the carbon atom is increased from the surface of the metal plate 10 to about 20 nm or less.
  • the outer portion SP of the metal plate 10 may include an oxide film.
  • the outer portion SP may comprise an oxide film containing an oxide.
  • the outer portion SP may include an oxide film having an oxygen atom concentration of 5 at% or more. That is, a portion having an oxygen atom concentration of 5 at% or more can be defined as an oxide film, and the oxide film can have a thickness of about 40 nm or more from the surface of the metal plate 10.
  • FIGS. 3 to 4 are graphs showing the analysis of iron (Fe) characteristics on the surface of the deposition mask according to the embodiment using the X-ray element analysis method.
  • FIG. 3 is a graph showing binding energy and intensity (c / s) for each sputtering cycle
  • FIG. 4 is a graph showing the relationship between binding energy and intensity Fig. 3 is an exploded view of the graph of Fig.
  • one cycle means sputtering for 0.5 minutes
  • the first one means sputtering for 0.5 minutes (min)
  • the signal intensity is not an absolute value
  • one of the measured total binding energies Means the relative value of binding energy.
  • the one-time sputtering by the X-ray elemental analysis may mean sputtering to a depth of about 5 nm or less from the surface of the metal plate 10, and the sputtering may be performed at a depth of about 0.4 nm to about 5 nm It may mean measuring the elements contained in the region.
  • the first turn can analyze an element included in a depth of about 5 nm to about 10 nm (first region) from the surface of the metal plate 10.
  • the third time means that the sputtering is performed for 1.5 minutes, and the element included in the region from the depth of 15 nm to the depth of about 20 nm (the third region) based on the surface of the metal plate 10 can be analyzed.
  • the orbital describes peak values in the binding energy range of about 705 eV to about 725 eV.
  • the peak value for the above-described coupling energy range changes according to the sputtering cycle in the outer portion SP of the metal plate 10.
  • FIG. It can be seen that the peak value with respect to the coupling energy range changes as the surface of the metal plate 10 becomes deeper and the material contained in the outer portion SP differs depending on the depth.
  • the orbitals when Fe metal is included, the orbitals can have a peak intensity intensity at a binding energy of about 706.7 eV.
  • the orbital when pure iron is included, the orbital may have a peak intensity value in a first range defined by a binding energy range of about 706.4 eV to about 707 eV.
  • iron oxide Fe 2 O 3
  • the orbitals can have a peak intensity intensity at a binding energy of about 710.8 eV.
  • the orbital may have a peak intensity value in a second range defined by a binding energy range of about 710.5 eV to about 711.1 eV.
  • the outer portion SP of the metal plate 10 may include an oxide film including an oxide.
  • the outer part SP may comprise iron oxide (Fe 2 O 3 ).
  • the amount of iron oxide may vary depending on the surface depth at the outer portion SP.
  • the metal plate 10 can measure the intensity (c / s) value of the X-ray element analysis method such as a peak intensity value (c / s, XPS Counting rate) changes.
  • each offset may have a peak intensity value in the first range.
  • the peak intensity value for the first range may gradually increase as the offset increases. That is, the peak intensity value for the first range may gradually increase as it is deeper from the surface at the outer portion SP of the metal plate.
  • the pure iron may have a maximum peak intensity value in each sputtering cycle. That is, the pure iron may have a maximum peak intensity value in the depth region according to the rotation. In one example, the pure iron may have a first peak intensity that is a maximum peak intensity value in three sputtering cycles. In detail, the pure iron may have a first peak intensity which is a maximum peak value in a depth region (third region) from about 15 nm depth to about 20 nm from the surface.
  • the iron oxide may have an orbital having a binding energy range from about 710.5 eV to about 711.1 eV, e.g., a peak intensity value in the second range.
  • each offset may have a peak intensity value in the second range.
  • the peak intensity value for the second range may gradually increase as the offset increases.
  • the peak intensity value for the second range may gradually increase from the surface of the metal plate 10 to a depth of about 25 nm or less.
  • the peak intensity value for the second range is defined as the depth of the third region (depth region from about 15 nm to about 20 nm) in the second region (from about 10 nm depth to about 15 nm depth) Can be increased rapidly. That is, the ratio of iron oxide can increase rapidly as the depth of the surface reaches about 20 nm from the surface.
  • the iron oxide may have a maximum peak intensity value in each sputtering cycle. That is, the iron oxide may have a maximum peak intensity value in the depth region according to the rotation.
  • the iron oxide may have a second peak intensity which is a maximum peak intensity value in three sputtering cycles.
  • the iron oxide may have a second peak intensity which is a maximum peak value in a depth region (third region) from about 15 nm depth to about 20 nm from the surface.
  • the concentration of oxygen atoms and the concentration of iron atoms vary rapidly as the depth from the second region to the third region of the metal plate 10 increases Able to know.
  • the peak intensity value of each of the pure iron (Fe metal) and the iron oxide (Fe 2 O 3 ) increases from the second region of the metal plate 10 to the third region It can be seen that it changes abruptly.
  • embodiments may have a second peak intensity for the second range and a third peak intensity for the first range.
  • the first peak intensity for the second peak intensity may be less than or equal to about 0.5. If the ratio of the first peak intensity to the second peak intensity exceeds 0.7, it may mean that the proportion of iron oxide (Fe 2 O 3 ) contained in the outer portion SP of the metal plate 10 is low . In detail, the oxygen content in the outer part SP is low, which means that the ratio of iron oxide (Fe 2 O 3 ) is low and the proportion of iron (Fe metal) is high.
  • the small-sized hole V1 and the large-sized hole V2 formed on one surface and the other surface of the metal plate 10 may not be uniformly formed, and thereby the small-sized hole V1 and the large- And the diameter and the like of the through holes TH communicating with each other are not uniform, so that deposition failure may occur.
  • the orbitals describe peak values in the binding energy range of about 850 eV to about 870 eV.
  • the peak value for the above-described coupling energy range changes according to the number of sputtering cycles in the outer part SP of the metal plate 10. It can be seen that the peak value with respect to the coupling energy range changes as the surface of the metal plate 10 becomes deeper and the material contained in the outer portion SP differs depending on the depth.
  • the orbitals when containing pure nickel (Ni metal), can have peak intensity intensity at a bond energy of about 852.6 eV. Specifically, when pure nickel is included, the orbital may have a peak intensity value in a third range defined by a bonding energy range of about 852.3 eV to about 852.9 eV. Also, if nickel hydroxide (Ni (OH) 2 ) is included, the orbitals can have a peak intensity intensity at a bond energy of about 856.2 eV. Specifically, when nickel hydroxide is included, the orbital may have a peak intensity value in a second range defined by a binding energy range of about 855.9 eV to about 856.5 eV.
  • the outer portion SP of the metal plate 10 may comprise a hydroxide.
  • the outer part SP may comprise nickel hydroxide (Ni (OH) 2 ).
  • the amount of nickel hydroxide may vary depending on the depth of the surface in the outer portion (SP).
  • the signal intensity (c / s) value of the X-ray element analysis method for example, the peak intensity value (c / s, XPS counting rate) have.
  • each offset may have a peak intensity value in the third range.
  • the peak intensity value for the third range may gradually increase as the offset increases. That is, the peak intensity value for the third range may gradually increase as it is deeper from the surface at the outer portion SP of the metal plate.
  • the peak intensity value for the third range may gradually increase as the depth is deepened.
  • the peak intensity value for the third range may increase sharply as it deepens from the second area of the metal plate 10 to the third area. That is, the ratio of the pure nickel may increase rapidly as the depth of the second region of the metal plate 10 deepens into the third region.
  • the pure nickel may have a maximum peak intensity value in each sputtering cycle. That is, the pure nickel may have a maximum peak intensity value in the depth region according to the rotation.
  • the pure nickel may have a third peak intensity which is a maximum peak intensity value in three sputtering cycles.
  • the pure nickel may have a third peak intensity which is a maximum peak value in a depth region (third region) from a depth of about 15 nm to about 20 nm from the surface.
  • the nickel hydroxide may have an orbital having a binding energy range from about 855.9 eV to about 856.5 eV, e.g., a peak intensity value in the fourth range.
  • each offset may have a peak intensity value in the fourth range.
  • the peak intensity value for the fourth range may gradually increase as the offset increases.
  • the peak intensity value for the fourth range may gradually increase as the depth of the outer portion SP of the metal plate 10 increases.
  • the peak intensity value for the fourth range may gradually increase from a depth of about 10 nm or more from the surface of the outer portion SP to a depth thereof.
  • the peak intensity value for the fourth range may increase sharply as it deepens from the second area to the third area of the metal plate 10. That is, the proportion of nickel hydroxide may increase rapidly as the depth from the second region to the third region increases from the surface.
  • the nickel hydroxide may have a maximum peak intensity value in each sputtering cycle. That is, the nickel hydroxide may have a maximum peak intensity value in the depth region according to the rotation. In one example, the nickel hydroxide may have a fourth peak intensity that is a maximum peak intensity value in three sputtering cycles. In detail, the nickel hydroxide may have a fourth peak intensity which is a maximum peak value in a depth region (third region) from about 15 nm depth to about 20 nm from the surface.
  • the concentration of oxygen atoms and the concentration of nickel atoms change rapidly from the second region of the metal plate 10 to the third region .
  • Table 2 it can be seen that the amount of the pure nickel (Ni metal) and the nickel hydroxide (Ni (OH) 2 ) abruptly changes from the second region to the third region.
  • embodiments may have a fourth peak intensity for the fourth range and a third peak intensity for the third range.
  • the third peak intensity for the fourth peak intensity may be about 1.1 or less.
  • the fourth peak intensity for the fourth peak intensity may be about 1.05 or less.
  • the oxygen content of the outer portion SP of the metal plate 10 is low when the ratio of the third peak intensity to the fourth peak intensity exceeds about 1.3.
  • it may mean that the oxygen content in the outer part SP is low and the ratio of nickel hydroxide (Ni (OH) 2 ) is low and the proportion of nickel (Ni metal) is high.
  • the ratio of the nickel hydroxide contained in the outer portion SP is low, so that the small-sized hole V1 and the large-sized hole V2 formed on one surface and the other surface of the metal sheet 10 may not be uniformly formed,
  • the shape and the diameter of the through hole TH communicating with the small hole V1 and the small hole V2 are not uniform and the deposition defect may occur.
  • the atomic concentration of the metal plate 10 may vary depending on the depth.
  • the atomic concentration of the outer portion SP of the metal plate 10 may change as it is deeper from the surface.
  • the maximum value of the oxygen atom concentration at a depth of about 30 nm or less from the surface that is the outer portion (SP) may be about 55 at% or more. That is, the outer portion SP of the metal plate 10 including the surface may contain a large amount of oxygen.
  • the first peak intensity which is the maximum peak value in the first range with a binding energy of 706.4 eV to 707 eV at a specific depth from the surface of the metal plate 10
  • the second peak intensity which is the maximum peak value.
  • the third peak intensity which is the maximum peak value in the third range where the bonding energy is 852.3 eV to 852.9 eV at a specific depth from the surface of the metal plate 10
  • the outer portion SP of the metal plate 10 may include oxides and hydroxides.
  • the outer part SP may include iron oxide (Fe 2 O 3 ) and nickel hydroxide (Ni (OH) 2 ), and iron oxide and nickel hydroxide may be included in the above- The etch factor can be improved.
  • the thickness of the oxide film formed on the surface of the metal plate 10, which is the base material of the mask for vapor deposition 100, can be controlled and the quality can be improved. Further, the adhesion between the metal plate and the photoresist layer can be improved, and the one surface and the other surface of the metal plate 10 can be prevented from being overetched in the etching process for forming the small-surface voids V1 and V2. In addition, it is possible to prevent the photoresist layer from being peeled off by the above etching during the etching process.
  • the vapor deposition mask 100 according to the embodiment can be manufactured from the metal plate 10 described above.
  • the region where the etching is not proceeded in the deposition mask 100 may include an outer portion SP including a surface corresponding to the metal plate 10 and an inner portion other than the outer portion SP.
  • the vapor deposition mask 100 according to the embodiment will be described with reference to the drawings.
  • FIG. 7 to 9 are conceptual diagrams illustrating a process of depositing an organic material on the substrate 300 using the deposition mask 100 according to the embodiment.
  • FIG. 7 is a view showing an organic substance deposition apparatus including an evaporation-use mask 100 according to an embodiment
  • FIG. 8 is a view showing a state where the evaporation-use mask 100 according to the embodiment is stretched to be mounted on the mask frame 200
  • Fig. 10 is a view showing a plurality of deposition patterns formed on the substrate 300 through a plurality of through holes of the deposition mask 100.
  • the organic substance deposition apparatus may include an evaporation mask 100, a mask frame 200, a substrate 300, an organic material deposition container 400, and a vacuum chamber 500.
  • the vapor deposition mask 100 may include a metal.
  • the vapor deposition mask 100 may have the same composition as the metal plate 10 described above.
  • the vapor deposition mask 100 may be invar including iron (Fe) and nickel (Ni). More specifically, the vapor deposition mask 100 comprises Invar, which contains about 63.5 wt.% To about 64.5 wt.% Iron (Fe) and about 35.5 wt.% To about 36.5 wt.% Nickel .
  • the deposition mask 100 may include an effective portion for deposition, and the effective portion may include a plurality of through holes TH.
  • the vapor deposition mask 100 may be a substrate for an evaporation mask including a plurality of through holes TH. At this time, the through holes may be formed to correspond to patterns to be formed on the substrate.
  • the through hole TH may be formed not only in the effective area located at the center of the effective part but also in the outer area surrounding the effective area located at the outer part of the effective part.
  • the vapor deposition mask 100 may include an ungrooved portion other than the effective portion including a deposition region. The through hole may not be located in the non-affluent portion
  • the mask frame 200 may include openings.
  • the plurality of through holes of the vapor deposition mask 100 may be disposed on a region corresponding to the opening. Accordingly, the organic material supplied to the organic material deposition container 400 can be deposited on the substrate 300.
  • the vapor deposition mask 100 may be disposed and fixed on the mask frame 200. For example, the deposition mask 100 may be tensioned with a predetermined tensile force and welded and fixed on the mask frame 200.
  • the vapor deposition mask 100 may be stretched in directions opposite to each other at an edge disposed at the outermost periphery of the vapor deposition mask 100.
  • the vapor deposition mask 100 may be pulled in a direction opposite to the one end of the vapor deposition mask 100 and the other end opposite to the one end in the longitudinal direction of the vapor deposition mask 100.
  • One end and the other end of the vapor deposition mask 100 may be arranged parallel to each other.
  • One end of the vapor deposition mask 100 may be one of four side surfaces disposed at the outermost side of the vapor deposition mask 100.
  • the vapor deposition mask 100 may be tensioned with a tensile force of about 0.1 kgf to about 2 kgf.
  • the vapor deposition mask 100 can be tensioned with a force of about 0.4 kgf to about 1.5 kgf. Accordingly, the tensile-wearing mask 100, which has been stretched, can be mounted on the mask frame 200.
  • the vapor deposition mask 100 may fix the vapor deposition mask 100 to the mask frame 200 by welding the unaffected portion of the vapor deposition mask 100.
  • a part of the vapor deposition mask 100 disposed outside the mask frame 200 may be removed by cutting or the like.
  • the substrate 300 may be a substrate used for manufacturing a display device.
  • the substrate 300 may be a substrate 300 for organic material deposition for OLED pixel patterns.
  • Organic patterns of red, green, and blue may be formed on the substrate 300 to form pixels that are three primary colors of light. That is, RGB patterns may be formed on the substrate 300.
  • a white organic pattern may be formed in addition to the red, green, and blue organic patterns. That is, a WRGB pattern may be formed on the substrate 300.
  • the organic material deposition container 400 may be a crucible. An organic material may be disposed inside the crucible.
  • the organic material may be deposited on the substrate 100.
  • the vapor deposition mask 100 may include a first surface 101 and a second surface 102 opposite to the first surface.
  • the one face 101 of the vapor deposition mask 100 may include a small hole V1 and the other face 102 of the vapor deposition mask 100 may include a facing hole V2.
  • the through hole TH may be communicated with a communication part CA through which the boundary between the small-sized hole V1 and the facing hole V2 is connected.
  • the vapor deposition mask 100 may include a first etching surface ES1 in the small hole V1.
  • the vapor deposition mask 100 may include a second etching surface ES2 in the facing surface V2.
  • the first etched surface ES1 in the small hole V1 and the second etched surface ES2 in the opposing hole V2 can communicate with each other to form a through hole.
  • the first etching surface ES1 in one small hole V1 can form one through hole in communication with the second etching surface ES2 in one facing hole V2.
  • the width of the face-to-face V2 may be greater than the width of the small-plane hole V1.
  • the width of the small-hole (V1) may be measured at the one surface (101), and the width of the facing hole (V2) may be measured at the other surface (102).
  • the small-sized hole (V1) may be disposed toward the substrate 300.
  • the small-sized hole V1 may be disposed close to the substrate 300. Accordingly, the small hole V1 may have a shape corresponding to the deposition material, that is, the deposition pattern DP.
  • the facing surface (V2) may be disposed toward the organic material deposition container (400). Accordingly, the face-to-face V2 can accommodate the organic material supplied from the organic material deposition container 400 in a wide width, and the small-sized hole V2, which is wider than the face- A fine pattern can be formed on the substrate 300 quickly.
  • the deposition mask 100 is a plan view of the vapor deposition mask 100 according to the embodiment.
  • the deposition mask 100 may include a deposition area DA and a non-deposition area NDA.
  • the deposition region DA may be a region for forming a deposition pattern.
  • the deposition region DA may include an effective portion for forming a deposition pattern.
  • the deposition area DA may include a pattern area and a non-pattern area.
  • the pattern region may be a region including a small-plane hole V1, a large-diameter hole V2, a through hole TH and an island portion IS, and the non-pattern region may include a small- ), The through hole (TH), and the island portion (IS).
  • the deposition region DA may include an effective portion including a valid region and an outer region, which will be described later, and a non-affinity portion not including deposition. Therefore, the valid portion may be the pattern region, and the non-affinity portion may be the non-pattern region.
  • one deposition mask 100 may include a plurality of deposition areas DA.
  • the deposition area DA of the embodiment may include a plurality of effective portions capable of forming a plurality of deposition patterns.
  • the valid part may include a plurality of valid areas AA1, AA2, and AA3.
  • the plurality of valid areas AA1, AA2, and AA3 may be disposed in the central area of the valid part.
  • the plurality of valid areas AA1, AA2, and AA3 may include a first valid area AA1, a second valid area AA2, and a third valid area AA3.
  • one deposition area DA may be a first valid part including a first valid area AA1 and a first outer area OA1 surrounding the first valid area AA1.
  • one deposition area DA may be a second effective part including a second effective area AA2 and a second outer area OA2 surrounding the second effective area AA2.
  • one deposition area DA may be a third effective part including a third effective area AA3 and a third outer area OA3 surrounding the third effective area AA3.
  • any one of the plurality of deposition regions included in the deposition mask 100 may be for forming one display device.
  • the single mask for vapor deposition 100 can include a plurality of effective portions, so that a plurality of display devices can be formed at the same time. Therefore, the vapor deposition mask 100 according to the embodiment can improve the process efficiency.
  • a plurality of effective portions included in one deposition mask 100 may be a part for forming one display device.
  • the plurality of valid portions may be for preventing deformation due to the load of the mask.
  • the plurality of valid areas AA1, AA2, and AA3 may be spaced apart from each other.
  • the plurality of effective areas AA1, AA2, and AA3 may be spaced apart from each other in the major axis direction of the deposition mask 100.
  • the deposition area DA may include a plurality of isolation areas IA1 and IA2 included in one deposition mask 100. [ Separation regions IA1 and IA2 may be disposed between adjacent effective portions. The isolation regions IA1 and IA2 may be spaced apart from a plurality of effective portions.
  • a second isolation region IA2 is formed between the second outer region OA2 surrounding the second effective region AA2 and the third outer region OA3 surrounding the third effective region AA3.
  • the adjacent effective portions can be distinguished from each other by the separation regions IA1 and IA2, and one mask for supporting the vapor can support the plurality of effective portions.
  • the deposition mask 100 may include a non-deposition region NDA on both sides of the deposition region DA in the longitudinal direction.
  • the deposition mask 100 according to the embodiment may include the non-deposition area NDA on both sides in the horizontal direction of the deposition area DA.
  • the non-deposition region NDA of the deposition mask 100 may be a region not involved in deposition.
  • the non-deposition area NDA may include frame fixing areas FA1 and FA2 for fixing the deposition mask 100 to the mask frame 200.
  • the non-deposition region NDA may include half etching portions HF1 and HF2 and an open portion.
  • the deposition region DA may be a region for forming a deposition pattern
  • the non-deposition region NDA may be a region not involved in deposition.
  • a surface treatment layer different from the material of the metal plate 10 may be formed in the deposition region DA of the deposition mask 100, and a surface treatment layer may not be formed in the non-deposition region NDA.
  • a surface treatment layer different from the material of the metal plate 10 may be formed on only one of the one surface 101 of the mask 1 100 or the other surface 102 opposite to the one surface 101.
  • a surface treatment layer different from the material of the metal plate 10 may be formed only on a part of one surface of the vapor deposition mask 100.
  • the entire surface and / or part of the deposition mask 100 may include a surface treatment layer having a lower etching rate than the material of the metal plate 10, The etching factor can be improved. Accordingly, the vapor deposition mask 100 of the embodiment can form a through hole having a small size with high efficiency.
  • the vapor deposition mask 100 of the embodiment may have a resolution of 400 PPI or more.
  • the deposition mask 100 can form a deposition pattern having a high resolution of 500 PPI or more with high efficiency.
  • the surface treatment layer may include an element different from the material of the metal plate 10, or may include a metal material having a different composition of the same element.
  • the manufacturing process of the evaporation mask will be described in detail.
  • the non-deposition region NDA may include half etching portions HF1 and HF2.
  • the non-deposition area NDA of the deposition mask 100 may include a first half-etching area HF1 on one side of the deposition area DA, And a second half-etching portion HF2 on the other side opposite to the one side.
  • the first half etching part HF1 and the second half etching part HF2 may be regions where grooves are formed in the depth direction of the deposition mask 100.
  • the first half etching part HF1 and the second half etching part HF2 can have a groove portion having a thickness of about 1/2 of the thickness of the deposition mask so that stress can be dispersed when the deposition mask 100 is stretched have.
  • the half etching portions HF1 and HF2 are preferably formed symmetrically with respect to the center of the evaporation mask 100 in the X-axis direction or in the Y-axis direction. This makes it possible to uniformly control the tensile force in both directions.
  • the half-etching portions HF1 and HF2 may be formed in various shapes.
  • the half etching portions HF1 and HF2 may include a semicircular groove portion.
  • the grooves may be formed on at least one of the one surface 101 of the vapor deposition mask 100 and the other surface 102 opposite to the one surface 101.
  • the half-etched portions HF1 and HF2 may be formed on one surface 101 corresponding to the small-hole surface V1. Accordingly, the half-etching portions HF1 and HF2 can be formed simultaneously with the small-plane hole V1, thereby improving the process efficiency.
  • the half-etching portions HF1 and HF2 can disperse stress that may be caused by a difference in size between facing faces V2.
  • the embodiment is not limited thereto, and the half-etching portions HF1 and HF2 may have a rectangular shape.
  • the first half-etching portion HF1 and the second half-etching portion HF2 may have a rectangular or square shape. Accordingly, the vapor deposition mask 100 can effectively disperse the stress.
  • the half-etching portions HF1 and HF2 may include a curved surface and a flat surface.
  • the plane of the first half-etching part HF1 may be disposed adjacent to the first effective area AA1 and the plane may be disposed horizontally with the longitudinal end of the evaporation mask 100.
  • the curved surface of the first half-etching part HF1 may be convex toward one end in the longitudinal direction of the evaporation mask 100.
  • the curved surface of the first half-etching part HF1 may be formed so that a half of the length of the mask in the vertical direction corresponds to the radius of the semicircular shape.
  • the plane of the second half-etching part HF2 may be disposed adjacent to the third effective area AA3, and the plane may be disposed horizontally with respect to the longitudinal direction end of the deposition mask 100 have.
  • the curved surface of the second half-etching portion HF2 may be convex toward the other end in the longitudinal direction of the deposition mask 100.
  • the curved surface of the second half-etching portion HF2 may be formed so that a half of the length of the mask in the vertical direction corresponds to the radius of the semicircular surface.
  • the half etching portions HF1 and HF2 can be formed at the same time when forming the small-plane hole V1 or the facing hole V2. This can improve process efficiency.
  • the grooves formed on one surface 101 and the other surface 102 of the evaporation mask 100 may be offset from each other. Whereby the half etching portions HF1 and HF2 may not penetrate.
  • the deposition mask 100 may include four half-etching portions.
  • the half etching portions HF1 and HF2 may include even-numbered half etching portions HF1 and HF2, so that the stress can be more efficiently dispersed.
  • the half-etching portions HF1 and HF2 may be further formed on the unaffected portion UA of the deposition region DA.
  • the half-etching portions HF1 and HF2 may be disposed in a plurality of the non-fluxing portions UA dispersed in all or a part of the UA to disperse the stress in tension of the vapor deposition mask 100.
  • the deposition mask 100 according to the embodiment may include a plurality of half-etching portions.
  • the deposition mask 100 according to the embodiment includes the half-etching portions HF1 and HF2 only in the non-deposition region NDA, but is not limited thereto.
  • the deposition region DA and the non- NDA) may further include a plurality of half-etching portions. Accordingly, the stress of the vapor deposition mask 100 can be uniformly dispersed.
  • the non-deposition area NDA may include frame fixing areas FA1 and FA2 for fixing the deposition mask 100 to the mask frame 200.
  • a first frame fixing area FA1 may be formed on one side of the deposition area DA and a second frame fixing area FA2 may be formed on the other side opposite to the one side of the deposition area DA .
  • the first frame fixing area FA1 and the second frame fixing area FA2 may be areas fixed to the mask frame 200 by welding.
  • the frame fixing areas FA1 and FA2 are disposed between the half etching portions HF1 and HF2 of the non-deposition region NDA and the effective portions of the deposition region DA adjacent to the half etching portions HF1 and HF2.
  • the first frame fixing area FA1 is formed in the first half etching portion HF1 of the non-deposition region NDA and the first half etching portion HF2 of the deposition region DA adjacent to the first half etching portion HF1.
  • the second frame fixing area FA2 may be formed in the second half etching portion HF2 of the non-deposition region NDA and the second half etching portion HF2 of the deposition region DA adjacent to the second half etching portion HF2.
  • the deposition mask 100 may include semicircular openings at both ends in the horizontal direction X.
  • the non-deposition area NDA of the vapor deposition mask 100 may include one semicircular open part at each end in the horizontal direction.
  • the non-deposition area NDA of the vapor deposition mask 100 may include an open part having a center in the vertical direction Y on one side in the horizontal direction.
  • the non-deposition area NDA of the vapor deposition mask 100 may include an open part whose center is opened in the vertical direction on the opposite side to the one side in the horizontal direction. That is, both ends of the vapor-deposition mask 100 may include open portions at half the length in the vertical direction.
  • both ends of the vapor deposition mask 100 may be shaped like a horse hoof.
  • the curved surface of the open portion may be directed to the half-etching portions HF1 and HF2. Accordingly, the opening portions located at both ends of the deposition mask 100 are spaced apart from the first half-etching portions HF1 and HF2 or the second half-etching portions HF1 and HF2 and the vertical direction length of the deposition mask 100 The separation distance may be the shortest at a half of the distance.
  • the vertical length d1 of the first half-etching portion HF1 or the second half-etching portion HF2 may correspond to the length d2 of the open portion in the vertical direction. Accordingly, when the vapor deposition mask 100 is stretched, the stress can be evenly dispersed, and the wave deformation of the vapor deposition mask 100 can be reduced. Therefore, the vapor deposition mask 100 according to the embodiment can have a uniform through-hole, and the deposition efficiency of the pattern can be improved.
  • the half-etching portions HF1 and HF2 may be further formed in the non-affinity portion UA of the deposition region DA.
  • the half-etching portion may be disposed in a plurality of the non-legible portions UA dispersed in all or a part of the non-legible portion UA in order to disperse the stress during tensioning of the vapor-deposition mask 100.
  • the half etching portions HF1 and HF2 may also be formed in the peripheral areas of the frame fixing areas FA1 and FA2 and / or the frame fixing areas FA1 and FA2. Accordingly, when the deposition mask 100 (see FIG. 1) is formed when the deposition mask 100 is fixed to the mask frame 200, and / or when depositing the deposition material after fixing the deposition mask 100 to the mask frame 200 Can be uniformly dispersed. Accordingly, the vapor deposition mask 100 can be maintained to have a uniform through-hole.
  • the vapor deposition mask 100 may include a plurality of effective portions spaced apart in the longitudinal direction and a non-effective portion (UA) other than the effective portion.
  • the deposition area DA may include a plurality of effective parts and a non-effective part UA other than the effective part.
  • the plurality of valid portions may include a first valid portion, a second valid portion, and a third valid portion.
  • the first valid area may include a first valid area AA1 and a first outer area OA1 surrounding the first valid area AA1.
  • the second valid area may include a second valid area AA2 and a second outer area OA2 surrounding the second valid area AA2.
  • the third valid part may include a third effective area AA3 and a third outer area OA3 surrounding the third valid area AA3.
  • the effective part may include a plurality of small hole holes V1 formed on one surface of the deposition mask 100, a plurality of facing holes V2 formed on the other surface opposite to the one surface, And a plurality of through holes (TH) formed by a connecting portion (CA) to which a boundary of the first electrode (V2) is connected.
  • the effective regions AA1, AA2, and AA3 may include an island portion IS for supporting a plurality of through holes TH.
  • the island portion IS may be positioned between adjacent through holes TH of the plurality of through holes TH. That is, the areas other than the through holes TH in the effective areas AA1, AA2, and AA3 of the vapor deposition mask 100 may be the island portions IS.
  • the island portion IS may refer to a portion of the effective portion of the deposition mask 100 that is not etched on one side 101 or the other side 102.
  • the island portion IS may be an unetched region between the through hole and the through hole at the other surface 1021 where the facing surface V2 of the effective portion of the vapor deposition mask 100 is formed. Therefore, the island portion IS may be disposed parallel to one surface 101 of the deposition mask 100.
  • the island portion IS may be disposed on the same plane as the other surface 102 of the deposition mask 100.
  • the island portion IS may be the same thickness as at least a portion of the unaffected portion UA on the other side 102 of the vapor deposition mask 100.
  • the island portion IS may have the same thickness as the unetched portion of the non-affinity portion 102 on the other side 102 of the deposition mask 100. Accordingly, the deposition uniformity of the subpixel can be improved through the deposition mask 100.
  • the island portion IS may be disposed in a plane parallel to the other surface 102 of the deposition mask 100.
  • the parallel plane means that the other surface 102 of the deposition mask 100 in which the island portion IS is disposed by the etching process around the island portion IS and the other surface 102 of the non- 100 may have a height difference of ⁇ 1 ⁇ m or less on the other surface 102.
  • the island portion (IS) may have a polygonal shape.
  • the island portion IS may have a curved shape. That is, the island portion IS may have a polygonal or curved shape when viewed from the other side 102 of the mask-wearing mask 100 in a plan view.
  • the upper surface of the island portion IS may have a polygonal or curvilinear shape. That is, the island portion IS may have a planar shape in the form of a polygonal or curved shape.
  • the curved graphic shape may be a polygon having a plurality of sides and an inner angle, and may have a shape having at least one side curve.
  • the island portion IS when viewed in a plane, may include a plurality of curves, and the curves may be curved shapes. That is, the upper surface of the island portion IS may have a polygonal shape or a curved shape by an etching process for forming a facing surface V1.
  • the vapor deposition mask 100 includes outer areas OA1, OA2, and OA3 disposed around the effective areas AA1, AA2, and AA3 and disposed outside the effective areas AA1, AA2, and AA3 can do.
  • the effective area AA may be an inner area of the plurality of through holes when the outer peripheries of the outermost through holes for depositing the organic material are connected.
  • the non-directivity unit (UA) may be an area outside the outermost perforations of the outermost through holes for depositing the organic material among the plurality of through holes.
  • the ineffective portion (UA) may be an outer region of the outermost region (OA) when the outer peripheries of the outermost perforations are connected.
  • the non-ineffective portion UA includes a region excluding the effective portion including the effective regions AA1, AA2 and AA3 of the deposition region DA, the outer regions OA1, OA2 and OA3 surrounding the effective region, Area (NDA).
  • the first valid area AA1 may be located in the first outer area OA1.
  • the first effective area AA1 may include a plurality of through holes TH for forming an evaporation material.
  • the first outer area OA1 surrounding the outer periphery of the first effective area AA1 may include a plurality of through holes.
  • the plurality of through holes included in the first outer area OA1 are for reducing etching failure of the through holes TH located at the outermost part of the first effective area AA1. Accordingly, the vapor deposition mask 100 according to the embodiment can improve the uniformity of the plurality of through holes TH located in the effective regions AA1, AA2, and AA3, and can improve the quality of the vapor deposition pattern Can be improved.
  • the shape of the through hole TH in the first effective area AA1 may correspond to the shape of the through hole in the first outer area OA1. Accordingly, the uniformity of the through hole TH included in the first effective area AA1 can be improved.
  • the shape of the through hole TH of the first effective area AA1 and the shape of the through hole of the first outer area OA1 may be circular.
  • the embodiment is not limited to this, and the through hole TH may have various shapes such as a diamond pattern and an elliptical pattern.
  • the second valid area AA2 may be located in the second outer area OA2.
  • the second valid area AA2 may have a shape corresponding to the first valid area AA1.
  • the second outer area OA2 may have a shape corresponding to the first outer area OA1.
  • the second outer area OA2 may further include two through holes in the horizontal direction and the vertical direction from the through holes located at the outermost of the second effective area AA2.
  • two through holes may be arranged in a row in the horizontal direction at the upper and lower positions of the through holes located at the outermost of the second effective area AA2.
  • two through holes may be arranged in a line in the vertical direction on the left side and the right side of the through hole located at the outermost side of the second effective area AA2.
  • the plurality of through holes included in the second outer region OA2 are for reducing the etching failure of the through holes located at the outermost portion of the effective portion. Accordingly, the vapor deposition mask according to the embodiment can improve the uniformity of the plurality of through holes located in the effective portion, thereby improving the quality of the vapor deposition pattern manufactured through the mask.
  • the third valid area AA3 may be included in the third outer area OA3.
  • the third effective area AA3 may include a plurality of through holes for forming a deposition material.
  • the third outer area OA3 surrounding the outer periphery of the third effective area AA3 may include a plurality of through holes.
  • the third valid area AA3 may have a shape corresponding to the first valid area AA1.
  • the third outer area OA3 may have a shape corresponding to the first outer area OA1.
  • the through holes TH included in the effective areas AA1, AA2, and AA3 may have a shape partially corresponding to the through holes included in the outer areas OA1, OA2, and OA3.
  • the through holes included in the effective areas AA1, AA2, and AA3 may have different shapes from the through holes located at the edge portions of the outer areas OA1, OA2, and OA3. Accordingly, it is possible to control the difference in stress depending on the position of the deposition mask 100.
  • FIGS. 11 and 12 are plan views showing an effective region of the deposition mask 100 according to the embodiment
  • FIG. 13 is another plan view of the deposition mask according to the embodiment.
  • FIGS. 11 to 13 are plan views of any one of the first effective area AA1, the second effective area AA2 and the third effective area AA3 of the vapor deposition mask 100 according to the embodiment.
  • 11 and 12 illustrate the shape of the through hole TH and the arrangement between the through holes TH.
  • the vapor deposition mask 100 according to the embodiment has the through holes TH ).
  • the vapor deposition mask 100 may include a plurality of through holes TH.
  • the through holes TH may be arranged in a line or may be staggered according to the direction.
  • the through holes TH may be arranged in a row in the vertical axis and the horizontal axis, and may be arranged in a row in the vertical axis or the horizontal axis.
  • the vapor deposition mask 100 may include a plurality of through holes TH.
  • the plurality of through holes TH may have a circular shape.
  • the diameter Cx in the horizontal direction of the through hole TH and the diameter Cy in the vertical direction can correspond to each other.
  • the through holes TH may be arranged in a line according to the direction.
  • the through holes TH may be arranged in a row in the vertical axis and the horizontal axis.
  • the first through hole TH1 and the second through hole TH2 may be arranged in a line on the horizontal axis and the third through hole TH1 and the fourth through hole TH4 may be arranged in a line on the horizontal axis. have.
  • the first through hole TH1 and the third through hole TH3 may be arranged in a row on the vertical axis and the second through hole TH2 and the fourth through hole TH4 may be arranged in a row on the horizontal axis. have.
  • the island portions IS are positioned between the two adjacent through holes TH in the diagonal direction, can do. That is, the island portion IS may be positioned between two adjacent through holes TH located in diagonal directions with respect to each other.
  • the island portion IS may be disposed between the first through hole TH1 and the fourth through hole TH4.
  • the island portion IS may be disposed between the second through hole TH2 and the third through hole TH3.
  • the island portion IS may be positioned in the inclination angle direction of about +45 degrees and the inclination angle direction of about -45 degrees, respectively, based on the horizontal axis crossing the two adjacent through holes.
  • the direction of the inclination angle of about +/- 45 may mean the diagonal direction between the abscissa and the ordinate, and the inclination angle in the diagonal direction may be measured on the same plane of the abscissa and the ordinate.
  • another vapor deposition mask 100 may include a plurality of through holes.
  • the plurality of through holes may have an elliptical shape.
  • the diameter Cx in the horizontal direction of the through hole TH and the diameter Cy in the vertical direction may be different from each other.
  • the diameter Cx in the horizontal direction of the through hole may be larger than the diameter Cy in the vertical direction.
  • the embodiment is not limited to this, and the through-hole may have a rectangular shape, an octagonal shape, or a rounded octagonal shape.
  • the through holes TH may be arranged in a line in one axis of the longitudinal axis or in the transverse axis and may be staggered in the other axis.
  • the first through hole TH1 and the second through hole TH2 may be arranged in a line on the abscissa axis and the third through hole TH1 and the fourth through hole TH4 may be arranged in the first through hole TH1. And the second through hole (TH2), respectively.
  • two adjacent through holes TH1, TH2 may be located between the island portions IS.
  • the island portion IS may be positioned between the three through holes TH1, TH2, and TH3 positioned adjacent to each other.
  • the two through holes TH1 and TH2 among the three adjacent through holes TH1 and TH2 are through holes arranged in a line and the other through hole TH3 is adjacent to the one in the direction corresponding to the in- Hole, which can be disposed in an area between the two through-holes TH1 and TH2.
  • the island portion IS may be disposed between the first through hole TH1, the second through hole TH2, and the third through hole TH3. Alternatively, the island portion IS may be disposed between the second through hole TH2, the third through hole TH3, and the fourth through hole TH4.
  • the deviation between the diameters Cx in each horizontal direction between the vertexes TH and the deviation between the diameters Cy in the vertical direction can be realized at about 2% to about 10%. That is, when the size deviation between the adjacent holes of one reference hole is about 2% to about 10%, the uniformity of the deposition can be ensured.
  • the size variation between the reference hole and the adjacent holes may be about 4% to about 9%.
  • the size variation between the reference hole and the adjacent holes may be about 5% to about 7%.
  • the size variation between the reference hole and the adjacent holes may be about 2% to about 5%.
  • the size deviation between the reference hole and the adjacent holes is less than about 2%, the occurrence rate of moiré in the OLED panel after deposition can be increased.
  • the size deviation between the reference hole and the adjacent holes exceeds about 10%, the incidence of color unevenness in the OLED panel after deposition can be increased.
  • the mean deviation of the through-hole diameters may be +/- 5 mu m.
  • the mean deviation of the through-hole diameter may be +/- 3 mu m.
  • the mean deviation of the through-hole diameters may be +/- 1 mu m.
  • Embodiments can improve the deposition efficiency by realizing the size deviation within the range of ⁇ 3 ⁇ m between the reference hole and the adjacent holes.
  • the island portion IS in FIGS. 11 to 13 denotes an un-etched surface between the through holes TH at the other surface of the deposition mask 100 in which the facing surface V2 of the effective area AA is formed .
  • the island portion IS is formed on the other side of the non-etched vapor deposition mask 100 excluding the second etching surface ES2 and the through hole TH located in the facing area in the effective region AA of the vapor deposition mask.
  • the deposition mask 100 of the embodiment may be for high resolution to ultra high resolution OLED pixel deposition having a resolution of 400 PPI or more and 400 PPI to 800 PPI or more in detail.
  • the deposition mask 100 of the embodiment may be for forming a deposition pattern having a high resolution of Full-HD (High Definition) having a resolution of 400 PPI or more.
  • the vapor deposition mask 100 of the embodiment may be for OLED pixel deposition with a number of pixels in the horizontal and vertical directions of 1920 * 1080 or more and 400 PPI or more. That is, one effective area included in the deposition mask 100 of the embodiment may be for forming a pixel number of 1920 * 1080 or more.
  • the deposition mask 100 of the embodiment may be for forming a deposition pattern having a high resolution of QHD (Quad High Definition) having a resolution of 500PPI or more.
  • the deposition mask 100 of the embodiment may be for OLED pixel deposition with a number of pixels in the horizontal and vertical directions of 2560 * 1440 or more and 530 PPI or more.
  • the number of pixels per inch can be 530 PPI or more based on a 5.5 inch OLED panel. That is, one effective area included in the deposition mask 100 of the embodiment may be for forming a pixel number of 2560 * 1440 or more.
  • the deposition mask 100 of the embodiment may be for forming an ultra high resolution deposition pattern of UHD (Ultra High Definition) having a resolution of 700 PPI or more.
  • the vapor deposition mask 100 of the embodiment forms a vapor deposition pattern having a resolution of UHD (Ultra High Definition) for deposition of OLED pixels of 794 PPI or more and having a number of pixels of 3840 * 2160 or more in the horizontal and vertical directions . ≪ / RTI >
  • the diameter of the through hole (TH) may be a width between the communicating portions (CA).
  • the diameter of the through hole TH can be measured at the point where the end of the etched surface in the small-hole V1 meets the end of the etched surface in the opposite surface V2.
  • the measuring direction of the diameter of the through hole TH may be any one of a horizontal direction, a vertical direction, and a diagonal direction.
  • the diameter of the through-hole TH measured in the horizontal direction may be 33 ⁇ or less.
  • the diameter of the through-hole TH measured in the horizontal direction may be 33 ⁇ or less.
  • the diameter of the through-hole TH may be an average value of values measured in the horizontal direction, the vertical direction, and the diagonal direction, respectively.
  • the vapor deposition mask 100 can realize a QHD resolution.
  • the diameter of the through hole TH may be about 15 ⁇ to about 33 ⁇ .
  • the diameter of the through hole TH may be about 19 ⁇ ⁇ to about 33 ⁇ ⁇ .
  • the diameter of the through hole TH may be about 20 ⁇ to about 27 ⁇ . If the diameter of the through hole TH is greater than about 33 ⁇ , it may be difficult to realize a resolution of 500 PPI or more.
  • the diameter of the through-hole TH is less than about 15 mu m, deposition failure may occur.
  • the pitch between adjacent two through holes TH among the plurality of through holes in the horizontal direction may be about 48 ⁇ ⁇ or less.
  • the pitch between adjacent two through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 ⁇ to about 48 ⁇ .
  • the pitch between two neighboring through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 ⁇ to about 35 ⁇ .
  • the interval may mean the interval P1 between the center of the two adjacent first through holes TH1 and the center of the second through holes TH2 in the horizontal direction.
  • the spacing may mean the distance P2 between the center of the two adjacent first island portions and the center of the second island portion in the horizontal direction.
  • the center of the island portion IS may be the center on the un-etched side between the four through-holes TH adjacent in the horizontal direction and the vertical direction.
  • the center of the island portion IS may be located adjacent to the first through-hole TH1 and the second through-hole TH2 adjacent to each other in the vertical direction
  • the pitch between adjacent two through holes TH among the plurality of through holes in the horizontal direction may be about 48 ⁇ ⁇ or less.
  • the pitch between adjacent two through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 ⁇ to about 48 ⁇ .
  • the pitch between two neighboring through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 ⁇ to about 35 ⁇ .
  • the interval may mean the interval P1 between the center of the two adjacent first through holes TH1 and the center of the second through holes TH2 in the horizontal direction.
  • the interval may mean the interval (P2) between the center of the two adjacent first island portions and the center of the second island portion in the horizontal direction.
  • the center of the island portion IS may be the center of the unexposed face between one through-hole and two through-holes adjacent in the vertical direction.
  • the center of the island portion IS may be centered on the unexposed face between the two through holes and one through hole adjacent in the vertical direction. That is, the center of the island portion (IS) is the center of the non-etched opposite surface between the adjacent three through holes, and the adjacent three through holes may mean that a triangular shape can be formed when the center is the center.
  • the measuring direction of the distance between the two through-holes (TH) adjacent to the measurement direction of the diameter of the through-hole (TH) may be the same.
  • the distance between the through holes TH may be measured by measuring the distance between the two through holes TH adjacent to each other in the horizontal direction or the vertical direction.
  • the deposition mask 100 according to the embodiment can deposit OLED pixels having a resolution of 400 PPI or more.
  • the vapor deposition mask 100 according to the embodiment has a resolution of 500PPI or more as the diameter of the through hole TH is about 33 ⁇ ⁇ or less and the pitch between the through holes TH is about 48 ⁇ ⁇ or less OLED pixels can be deposited. More specifically, a green organic material having a resolution of 500 PPI or more can be deposited. That is, the QHD resolution can be realized by using the deposition mask 100 according to the embodiment.
  • the diameter of the through hole (TH) and the distance between the through holes (TH) may be a size for forming green subpixels.
  • the diameter of the through hole TH can be measured based on a green (G) pattern.
  • the green (G) pattern requires a larger number of red (R) patterns and blue (B) patterns because the recognition rate through the time is low, and the spacing between the through holes (TH) (B) pattern.
  • the deposition mask 100 may be an OLED deposition mask for implementing a QHD display pixel.
  • the deposition mask 100 may be for depositing at least one subpixel of red (R), first green (G1), blue (B), and second green (G2).
  • the deposition mask 100 may be for depositing red (R) sub-pixels.
  • the deposition mask 100 may be for depositing a blue (B) sub-pixel.
  • the deposition mask 100 may be for simultaneously forming a first green (G1) subpixel and a second green (G2) subpixel.
  • the pixel arrangement of the organic light emitting display may be arranged in the order of 'red (R) - first green (G1) - blue (B) - second green (G2)' (RGBG).
  • R 'red
  • G1 first green
  • B blue
  • G2 second green
  • the red R - the first green G1 can form one pixel RG
  • the blue B - the second green G2 can form another pixel BG.
  • the vapor deposition mask 100 according to the present invention may be required.
  • the diameter of the through hole TH may be about 20 ⁇ ⁇ or less in the horizontal direction in the vapor deposition mask 100 according to the embodiment. Accordingly, the deposition mask 100 according to the embodiment can implement UHD resolution.
  • the vapor deposition mask 100 according to the embodiment may have a resolution of 800 PPI class as the diameter of the through hole TH is about 20 ⁇ m or less and the interval between the through holes is about 32 ⁇ m or less OLED pixels can be deposited. That is, UHD resolution can be realized by using the deposition mask according to the embodiment.
  • the diameter of the through hole and the distance between the through holes may be a size for forming a green sub-pixel.
  • the deposition mask may be an OLED deposition mask for implementing a UHD display pixel.
  • FIG. 14 is a diagram showing overlapping sections of respective sections to explain height differences and sizes between a section in the direction of A-A 'and a section in the direction of B-B' in FIGS. 11 and 12.
  • FIG. 14 is a diagram showing overlapping sections of respective sections to explain height differences and sizes between a section in the direction of A-A 'and a section in the direction of B-B' in FIGS. 11 and 12.
  • the A-A 'direction is a transverse cross section that crosses the central region between the two first through-holes TH1 and TH3 adjacent in the vertical direction. That is, the cross section in the direction A-A 'may not include the through hole TH.
  • the transverse section in the direction A-A ' may be located between the etching surface ES2 in the facing face and the etching surface ES2 in the facing surface, and the island portion IS, which is the other surface of the deposition mask, is not etched. Accordingly, the island portion IS may include a surface parallel to an un-etched surface of the deposition mask. Alternatively, the island portion IS may include a surface that is the same as or parallel to the unmasked surface of the deposition mask 100.
  • B-B 'direction is a transverse cross section that crosses the center of each of the first through holes TH1 and the second through holes TH2 adjacent in the horizontal direction. That is, the cross-section in the direction of B-B 'may include a plurality of through holes TH.
  • One rib (RB) may be positioned between the adjacent third through hole (TH3) and the fourth through hole (TH4) in the direction of B-B '.
  • Another rib RB may be positioned between the fourth through hole TH4 and the fourth through hole in the horizontal direction and between the fifth through hole located in the opposite direction to the third through hole TH3.
  • One through hole (TH) may be positioned between the one rib and the other rib. That is, one through hole TH may be positioned between two ribs RB adjacent to each other in the horizontal direction.
  • the cross section in the direction of B-B ' may be a rib RB which is an area where the etching surface ES2 in the facing face and the etching surfaces ES2 in the adjacent facing face are connected to each other.
  • the rib (RB) may be a region to which the boundaries of two adjacent facing balls are connected. Since the ribs RB are etched, the ribs RB may be thinner than the island portions IS.
  • the width of the island portion IS may be about 2 ⁇ or more. That is, the width of the portion remaining unetched at the other surface in the direction parallel to the other surface may be about 2 ⁇ or more.
  • the entire volume of the mask for vapor deposition 100 can be increased.
  • the vapor deposition mask 100 having such a structure can secure sufficient rigidity against the tensile force applied in the organic material deposition process or the like and can be advantageous to maintain the uniformity of the through holes.
  • FIG. 15 is a cross-sectional view taken along the line B-B 'of FIG. 11 or 12. Referring to Fig. 15, a cross-sectional view taken along the line B-B 'in Figs. 11 and 12 and a cross-section of the rib RB in the effective region and an enlarged view of the through hole TH between the ribs RB in Fig. 14 do.
  • the thickness of the vapor deposition mask 100 may be different from the thickness of the uneffective portion UA in which the through hole TH is formed in the effective region AA and the unetched portion UA.
  • the thickness of the rib (RB) may be smaller than the thickness of the unetched unaffected portion (UA).
  • the thickness of the unaffected portion UA of the vapor deposition mask 100 may be greater than the thickness of the effective regions AA1, AA2, and AA3.
  • the island portion IS may be an unetched region, and the island portion IS may correspond to a maximum thickness of the unaffected portion UA to the non-deposited region NDA.
  • the vapor deposition mask 100 may have a maximum thickness of about 30 mu m or less in the unaffected portion UA to the non-deposition region NDA.
  • the maximum thickness of the island portion IS may be about 30 ⁇ m or less and the thickness of the effective regions AA 1, AA 2, and AA 3 except for the island portion IS may be less than the thickness of the non- Can be small.
  • the vapor deposition mask 100 may have a maximum thickness of about 25 mu m or less in the unaffected portion UA to the non-vapor deposition region NDA.
  • the deposition mask of an embodiment may have a maximum thickness of about 15 [mu] m to about 25 [mu] m in the unglued or non-deposited regions.
  • the maximum thickness of the island portion IS may be about 15 ⁇ ⁇ to about 25 ⁇ ⁇ .
  • the thickness of the metal plate 10 which is the source of the deposition mask 100, becomes thick, It may be difficult to form the hole TH.
  • the maximum thickness of the non-fatigued portion (UA) to the non-deposited region (NDA) of the vapor deposition mask (100) is less than about 15 mu m, the thickness of the metal plate is small, .
  • the maximum thickness (T3) measured at the center of the rib (RB) may be about 15 mu m or less.
  • the maximum thickness T3 measured at the center of the rib (RB) may be about 7 ⁇ ⁇ to about 10 ⁇ ⁇ .
  • the maximum thickness T3 measured at the center of the rib (RB) may be about 6 ⁇ ⁇ to about 9 ⁇ ⁇ .
  • the maximum thickness (T3) measured at the center of the rib (RB) exceeds about 15 mu m, it may be difficult to form an OLED deposition pattern having a high resolution of 500 PPI or more. Further, when the maximum thickness T3 measured at the center of the rib (RB) is less than about 6 mu m, uniform formation of the deposition pattern may be difficult.
  • the height H1 of the small hole of the vapor deposition mask 100 may be about 0.2 to about 0.4 times the maximum thickness T3 measured at the center of the rib RB.
  • the maximum thickness T3 measured at the center of the rib RB is about 7 ⁇ m to about 9 ⁇ m
  • the height H 1 between one surface of the vapor deposition mask 100 and the communication portion is about 1.4 Mu m to about 3.5 mu m.
  • the height H1 of the small hole of the vapor deposition mask 100 may be about 3.5 mu m or less.
  • the height of the small hole V1 may be about 0.1 mu m to about 3.4 mu m.
  • the height of the small hole V1 of the vapor deposition mask 100 may be about 0.5 mu m to about 3.2 mu m.
  • the height of the small hole V1 of the vapor deposition mask 100 may be about 1 [mu] m to about 3 [mu] m.
  • the height may be measured in the direction of thickness measurement of the vapor deposition mask 100, that is, the depth direction, and the height from one surface of the vapor deposition mask 100 to the communication portion may be measured. (X direction) and the vertical direction (y direction) described above in the plan views of Figs. 10 to 14 in the z axis direction at 90 degrees, respectively.
  • a deposition defect may occur due to a shadow effect in which the evaporation material spreads to a region larger than the area of the through hole in the OLED deposition .
  • the pore size W1 at one surface of the evaporation mask 100 where the small-sized hole V1 is formed may be larger than the pore size W2 at the communicating portion.
  • the difference between the pore size W1 on one surface of the evaporation mask 100 and the pore size W2 on the communicating portion may be about 0.01 ⁇ m to about 1.1 ⁇ m.
  • the difference between the pore size W1 on one surface of the evaporation mask and the pore size W2 on the communicating portion may be about 0.03 ⁇ m to about 1.1 ⁇ m.
  • the difference between the pore size W1 on one surface of the evaporation mask and the pore size W2 on the communicating portion may be about 0.05 ⁇ m to about 1.1 ⁇ m.
  • one end E1 of the face-to-face V2 may refer to a position where a rib RB, which is a boundary of the second inner side surface ES2 in the face-to-face V2, is located.
  • One end (E2) of the communication part may mean the end of the through hole (TH).
  • the inclination angle? 1 connecting one end E1 of the face-to-face V2 and one end E2 of the communication portion may be 40 to 55 degrees. Accordingly, a high-resolution deposition pattern of 400 PPI or higher and 500 PPI or higher in detail can be formed, and the island portion IS may be present on the other surface 102 of the deposition mask 100.
  • FIG. 16 is a view showing a manufacturing process of the deposition mask 100 according to the embodiment.
  • the manufacturing process of the vapor deposition mask 100 includes the steps of preparing a metal plate 10, forming a through hole in the metal plate 10 using a photoresist layer, And removing the resist layer to form an evaporation mask including the through-hole.
  • the metal plate 10 may be manufactured by a cold rolling method.
  • the metal plate 10 may be formed through melting, forging, hot rolling, normalizing, cold rolling and annealing.
  • the metal plate 10 may include a nickel (Ni) alloy.
  • the metal plate 10 may include iron (Fe) and nickel (Ni) alloy. More specifically, the metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr).
  • the metal plate 10 may include about 60% to about 65% by weight of the iron, and the nickel may include about 35% to about 40% by weight.
  • the metal plate 10 may include about 63.5 wt% to about 64.5 wt% of iron, and the nickel may include about 35.5 wt% to about 36.5 wt%.
  • the metal plate 10 may include a small amount of carbon, silicon, sulfur, phosphorus, manganese, titanium, cobalt, copper, May further include at least one or more elements of silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb).
  • a small amount may mean not more than 1% by weight. That is, the metal plate 10 may include Invar.
  • the step of preparing the metal plate 10 may further include a step of reducing the thickness according to the thickness of the metal plate 10 to be targeted.
  • the thickness reducing step may be a step of rolling or etching the metal plate 10 that has undergone the rolling process to form a required thickness.
  • a metal plate 10 having a thickness of about 30 ⁇ may be required to manufacture an evaporation mask for realizing a resolution of 400 PPI or more, and in order to manufacture an evaporation mask for realizing a resolution of 500 PPI or more, A metal plate 10 having a thickness of about 30 ⁇ to about 30 ⁇ may be required and a metal plate 10 having a thickness of about 15 ⁇ to about 20 ⁇ may be required to manufacture an evaporation mask capable of achieving a resolution of 800 PPI or higher.
  • the step of preparing the metal plate 10 may further include the step of surface-treating.
  • the surface-treating step may be a step of rearranging the atoms contained in the surface of the metal plate 10.
  • the step may be to rearrange the atoms of the outer part SP.
  • the atomic concentration of the outer portion SP may be changed by the surface-treating step.
  • the concentration of atoms contained in the depth of about 50 nm or less from the surface of the metal plate 10 may change through the above steps.
  • the thickness of the oxide film formed on the surface of the metal plate 10 may vary through the above steps.
  • the content of the material formed on the surface of the metal plate 10 may vary through the above steps.
  • the surface treatment step may be a surface treatment step for improving the etch factor.
  • the nickel alloy such as invar may have a high etching rate at the beginning of the etching, and the etching factor of the small-molecule-side void (V1) and / or the opposite-side void (V2) may be lowered.
  • one side and the other side of the metal plate 10 may be etched in the process of forming the small-sized hole V1 and / or the facing hole V2.
  • the photoresist layer can be peeled off by the above etching during the etching. Therefore, it may be difficult to form the penetrating hole TH of a small size and the through hole TH at a uniform position.
  • a surface treatment layer for improving the etch factor can be formed on the surface of the metal plate 10.
  • the surface treatment layer may be an etch barrier layer having an etching rate lower than that of the inner portion IP of the metal plate 10.
  • the surface treatment layer may have an atomic concentration different from that of the internal portion IP as described above.
  • the surface treatment layer may have a crystal plane and a crystal structure different from the inner portion IP of the metal plate 10.
  • the surface treatment layer may have a corrosion potential different from that of the metal plate 10.
  • the surface treatment layer may have different corrosion current or corrosion potential from the metal plate 10.
  • the surface-treating step may be a step of acid-treating the surface of the metal plate 10 and then performing heat treatment. Treating the metal plate 10 at a temperature of about 250 ° C to about 300 ° C for about 250 seconds to about 350 seconds.
  • the surface-treating step may be a step of heat-treating the metal plate 10 at a temperature of 270 ° C to about 290 ° C for about 280 seconds to about 320 seconds.
  • the surface treating step may be a step of heat treating at a temperature of about 280 DEG C for about 300 seconds.
  • the surface-treating step may be performed in an atmospheric environment.
  • the included atoms of the metal plate 10 may be rearranged by the surface-treating step.
  • the atomic concentration of iron, nickel, oxygen, etc. of the outer portion SP of the metal plate 10 can be changed by the surface-treating step, and the thickness of the oxide film formed on the surface can be controlled.
  • the maximum value of the iron (Fe) atom concentration may be about 40 at% or less at a depth of about 15 nm or less from the surface of the metal plate 10 by the surface treatment step
  • the maximum value of the atomic concentration can be about 25at% or less
  • the maximum value of the oxygen (O) atomic concentration can be about 55at% to about 65at%.
  • the surface-treating step may be a step of forming a surface treatment layer on one surface and / or both surfaces, the whole surface and / or the effective surface of the metal plate 10. Accordingly, it is possible to prevent the one surface and the other surface of the metal plate 10 from being etched in the process of forming the small-surface holes V1 and the large-surface holes V2 by the etching process. In addition, it is possible to prevent the photoresist layer from being peeled off by the above etching during the etching process.
  • the step of forming the through holes may include forming a first groove for forming a small-sized hole V1 on one surface of the metal plate 10, forming a first groove for forming a small-sized hole V2 on the other surface of the metal plate 10, And forming a second groove to form the through-hole.
  • a photoresist layer may be disposed on one side of the metal plate 10 to form a small-sized hole V1 in the metal plate 10.
  • the patterned first photoresist layer PR1 may be disposed on one surface of the metal plate 10 by exposing and developing the photoresist layer.
  • the other surface opposite to the one surface of the metal plate 10 may be provided with an etch lower layer such as a coating layer or a film layer for preventing etching.
  • a first groove may be formed on one surface of the metal plate 10 by etching through the open portion of the first photoresist layer PR1.
  • the open portion of the first photoresist layer PR1 may be exposed to an etchant or the like so that etching may occur at an open portion of the one surface of the metal plate 10 where the first photoresist layer PR1 is not disposed .
  • the step of forming the first groove may be a step of etching the metal plate 10 having a thickness (T1) of about 20 mu m to about 30 mu m until it is about half thickness.
  • the depth of the first groove formed through this step may be about 10 ⁇ to 15 ⁇ . That is, the thickness (T2) of the metal plate measured at the center of the first groove formed after this step may be about 10 ⁇ ⁇ to about 15 ⁇ ⁇ .
  • the step of forming the first groove may be an anisotropic etching or a semi-additive process (SAP).
  • the step may use an anisotropic etching or semi-addition method to half-etch the metal plate 10 through the open portion of the first photoresist layer PR.
  • the grooves formed through the half-etching can have an etching speed (direction b) in the depth direction higher than the speed in the side etching (direction a) rather than isotropic etching.
  • the etching factor of the small-plane hole (V1) may be 2.0 to 3.0.
  • the etch factor of the small-hole (V1) may be 2.1 to 3.0.
  • the etch factor of the small-hole (V1) may be 2.2 to 3.0.
  • the etching factor is the depth (B) of the etched SOF / the width A of the photoresist layer extending in the direction of the center of the through hole TH extending from the island portion IS of the SOF B / A).
  • A is an average value of the width of one side of the photoresist layer protruding on the one face and the width of the other side opposite to the one side.
  • the first photoresist layer PR1 may be removed. That is, the first photoresist layer PR1 may be removed before forming the second photoresist layer PR2.
  • one side of the metal plate 10 may be provided with an etch stop layer such as a coating layer or a film layer for preventing etching.
  • a protective layer may be formed on the side of the small-sized hole V1 so that the small-sized hole V1 is not affected by the etching solution used for forming the facing hole V2.
  • a photoresist layer may be disposed on the other surface of the metal plate 10 to form a facing surface V2.
  • the patterned second photoresist layer PR2 may be disposed on the other surface of the metal plate 10 by exposing and developing the photoresist layer.
  • a patterned second photoresist layer PR2 having an open portion for forming a facing surface V2 may be disposed on the other surface of the metal plate 10.
  • the open portion of the second photoresist layer PR2 may be exposed to an etchant or the like so that etching may occur at an open portion of the other surface of the metal plate 10 where the second photoresist layer PR2 is not disposed.
  • the other surface of the metal plate 10 may be etched by anisotropic etching or isotropic etching.
  • the groove on one surface of the metal plate 10 is connected to the facing surface V2 to form a through hole.
  • the second photoresist layer PR2 may be removed. Accordingly, a face-to-face (V2) formed on the one face, a face-face hole (V1) formed on the face opposite to the face face, a facing face (V2) And the through hole (TH) formed by the through hole (TH).
  • the step of forming the through hole may include forming a second groove for forming the facing hole (V2) after the step of forming the first groove for forming the small-sized hole (V1) Forming step.
  • a first groove for forming the small-sized hole V1 may be formed by a roll-to-roll process.
  • a first groove for forming the small-sized hole V1 may be formed on the base material of the metal plate 10 by a roll-to-roll process.
  • the base material of the metal plate 10 may be cut into a shape corresponding to the metal plate 10, and a second groove for forming the facing surface V2 may be formed on the metal plate 10.
  • the step of forming the through-hole may include forming a first groove for forming the small-sized hole V1 after the step of forming the second groove for forming the facing hole V2, Forming a hole.
  • the deposition mask 100 formed through the above steps may include the same material as the metal plate 10.
  • the region of the deposition mask 100 where the surface is not etched may include a material having the same composition as the outer portion SP of the metal plate 10.
  • the island portion IS of the vapor deposition mask 100 may include a material having the same composition as the outer portion SP of the metal plate 10. More specifically, the area of the island portion (IS), the non-fatigued portion (UA), and the non-deposited region (NDA) of the deposition mask (100) May comprise a material of the same composition as the outer part (SP).
  • the vapor deposition mask 100 formed through the above steps may have a maximum thickness at the center of the ribs RB that is smaller than the maximum thickness at the non-effective areas not subjected to etching.
  • the maximum thickness at the center of the rib (RB) may be about 15 microns.
  • the maximum thickness at the center of the rib (RB) may be less than about 10 ⁇ ⁇ .
  • the maximum thickness in the ineffective area of the deposition mask 100 may be from about 20 [mu] m to about 30 [mu] m, and may be from about 15 [mu] m to about 25 [ That is, the maximum thickness of the vapor deposition mask 100 in the ineffective area may correspond to the thickness of the metal plate 10 prepared in the step of preparing the metal plate 10.
  • 17 and 18 are views showing a deposition pattern formed through the deposition mask according to the embodiment.
  • the vapor deposition mask 100 may have a height H1 between one surface of the vapor deposition mask 100 in which the small hole V1 is formed and the connecting portion thereof is about 3.5 ⁇ m or less.
  • the height H1 may be about 0.1 [mu] m to about 3.4 [mu] m.
  • the height H1 may be about 0.5 [mu] m to about 3.2 [mu] m.
  • the height H1 may be about 1 [mu] m to about 3 [mu] m.
  • the distance between one surface 101 of the deposition mask 100 and the substrate on which the deposition pattern is disposed can be as short as possible, and the deposition defect due to the shadow effect can be reduced.
  • the R, G, and B patterns using the deposition mask 100 according to the embodiment it is possible to prevent the deposition of different deposition materials in the region between two adjacent patterns.
  • the patterns are formed in the order of R, G, and B from the left as shown in FIG. 18, the R pattern and the G pattern are prevented from being deposited in the region between the R pattern and the G pattern by a shadow effect .
  • the atomic concentration of the outer portion SP of the vapor deposition mask 100 and the atomic concentration of the inner portion IP may be different.
  • the outer portion SP may include an oxide film having an oxygen atom concentration of 5 at% or more, and the thickness of the oxide film may be about 40 nm or more from the surface.
  • the outer portion SP of the vapor deposition mask 100 is a portion where the etching process such as half etching is not performed and may correspond to the outer portion SP of the metal plate 10 described above.
  • the outer portion SP of the deposition mask 100 may refer to an area of the deposition area DA and the non-deposition area NDA where the etching process is not performed.
  • the outer portion SP may be at least one of a non-deposition region (NDA), or a non-dielectric portion (UA) or an island portion (IS). More specifically, the outer part SP in the deposition area DA may be a surface on which a non-fatigue part (UA) or an island part (IS) is formed in which one surface of the deposition mask 100 is not etched , And a surface of the other side of the vapor deposition mask 100 on which the small hole V1 is not formed. That is, the deposition mask 100 according to the embodiment may include an oxide film having an oxygen atom concentration of 5 at% or more, and the thickness of the oxide film may be about 40 nm or more from the surface.
  • the one surface and the other surface of the metal plate 10 from being overetched in the process of manufacturing the vapor deposition mask 100, and the through holes TH can be formed uniformly and precisely. Therefore, the organic material can be uniformly deposited, and the quality of the deposition can be improved.
  • An invar metal plate having a thickness of about 30 ⁇ and containing about 63.5 wt% to about 64.5 wt% of iron and containing about 35.5 wt% to about 36.5 wt% of nickel was prepared.
  • One surface and the other surface of the metal plate were subjected to acid treatment, and the metal plate was surface-treated for about 300 seconds in an atmosphere of about 280 ° C.
  • the atomic concentration and composition of each metal layer were analyzed from the surface of the metal plate surface-treated using an XPS equipment (manufactured by ULVAL-PHI).
  • the X-ray incident angle is 90 degrees and the photoelectron take-in angle is 40 degrees.
  • An invar metal plate having a thickness of about 30 ⁇ and containing about 63.5 wt% to about 64.5 wt% of iron and containing about 35.5 wt% to about 36.5 wt% of nickel was prepared.
  • One surface and the other surface of the metal plate were subjected to acid treatment and the metal plate was surface-treated for about 720 seconds in an atmosphere of about 180 ° C.
  • Atomic concentrations and components were analyzed from the surface of the metal plate surface-treated using the same XPS equipment (manufactured by ULVAL-PHI) as in the examples.
  • FIG. 2 is a diagram showing the surface atom concentration of the metal plate 10 according to the embodiment
  • FIG. 19 is a diagram showing the surface atom concentration of the metal plate 10 according to the comparative example.
  • the maximum value of the oxygen atom concentration in the depth region from the surface of the metal plate 10 to about 50 nm or less may be about 65 at% or less.
  • the maximum value of the oxygen atom concentration in the depth region from the surface to about 50 nm may be about 55 at% to about 65 at%.
  • the maximum value of the oxygen atom concentration at a depth (first region) of about 5 nm to about 10 nm from the surface may be about 55 at% to about 65 at%.
  • the maximum value of the oxygen atom concentration at a depth (second region) of about 10 nm to about 15 nm from the surface may be about 40 at% to about 65 at%.
  • the maximum value of the oxygen atom concentration at a depth of about 15 nm to about 20 nm (third region) from the surface may be about 20 at% to about 50 at%.
  • the maximum value of the oxygen atom concentration at a depth of about 20 nm to about 25 nm (fourth region) from the surface may be about 10 at% to about 30 at%.
  • the maximum value of the oxygen atom concentration at a depth of about 25 nm to about 30 nm from the surface (fifth region) may be about 10 at% to about 20 at%.
  • the maximum value of the oxygen atom concentration at a depth of about 30 nm to about 35 nm from the surface (sixth region) may be about 5 at% to about 15 at%.
  • the maximum value of the oxygen atom concentration in the depth region from the surface to about 50 nm can be about 55 at% or less.
  • the maximum value of the oxygen atom concentration in the depth region from the surface to about 50 nm may be about 50 at% to about 55 at%.
  • the maximum value of the oxygen atom concentration at a depth (first region) of about 5 nm to about 10 nm from the surface may be about 40 at% to about 45 at%.
  • the maximum value of the oxygen atom concentration in the depth (second region) from about 10 nm to about 15 nm from the surface may be about 15 at% to about 25 at%.
  • the maximum value of the oxygen atom concentration at a depth of about 15 nm to about 20 nm (third region) from the surface may be about 10 at% to about 20 at%.
  • the maximum value of the oxygen atom concentration at a depth of about 20 nm to about 25 nm (fourth region) from the surface may be about 5 at% to about 15 at%.
  • the maximum value of the oxygen atom concentration at a depth of about 25 nm to about 30 nm from the surface (fifth region) may be about 5 at% to about 10 at%.
  • the maximum value of the oxygen atom concentration at a depth of about 30 nm to about 35 nm from the surface (sixth region) may be about 5 at% to about 10 at%.
  • an oxide film having an oxygen concentration of about 5 at% or more may be formed on the surface of the metal plate 10 according to the embodiment, and the oxide film may have a thickness of about 40 nm or more from the surface of the metal plate 10.
  • FIG. 20 is a graph showing graphs for comparing surface iron (Fe) characteristics of the metal sheet according to the examples and the comparative examples.
  • 20 is a view of data measured at a depth corresponding to the above-described three times with data measured by XPS on the metal plate according to the embodiment and the metal plate 10 according to the comparative example. That is, FIG. 20 is an analysis of the characteristics of iron (Fe) contained in depths of about 15 nm to about 20 nm from the surfaces of the metal plates of Examples and Comparative Examples.
  • the signal intensity in FIG. 20 is not an absolute number, but a relative value relative to the specific binding energy range measured.
  • the metal plate according to Examples and Comparative Examples has a signal intensity value (c / s, XPS counting rate) corresponding to binding energy at a depth of about 15 nm to about 20 nm from the surface Lt; / RTI >
  • the metal plates according to the Examples and Comparative Examples can have a peak strength value for pure Fe in the first range, which is a bonding energy range of about 706.4 eV to about 707 eV, and can have a peak strength value of about 710.5 eV to about 711.1 (Fe 2 O 3 ) in the second range, which is the bonding energy range of the iron oxide (Fe 2 O 3 ).
  • the metal plates according to Examples and Comparative Examples can have a first peak intensity which is a maximum peak intensity value for pure iron at a depth of about 20 nm from a depth of about 15 nm from the surface, And a second peak intensity that is a maximum peak intensity value for iron oxide (Fe 2 O 3 ).
  • the metal plate according to an embodiment may have the first peak intensity for the second peak intensity of about 0.7 or less.
  • the first peak intensity is 5615 and the second peak intensity is 13357.5. Accordingly, the first peak intensity for the second peak intensity may be about 0.42.
  • the first peak intensity with respect to the second peak intensity may be larger than that of the embodiment.
  • the first peak intensity is 11817.5 and the second peak intensity is 13362.5. Accordingly, the first peak intensity for the second peak intensity may be about 0.88. That is, it can be seen that the ratio of iron oxide contained in the outer region of the metal plate according to the comparative example is significantly lower than that of the metal plate according to the embodiment.
  • 21 is a graph showing graphs for comparing surface nickel (Fe) characteristics of a metal plate according to Examples and Comparative Examples.
  • 21 is a graph showing data obtained by measuring the metal plate 10 according to the embodiment and the metal plate 10 according to the comparative example using XPS, at a depth corresponding to the above-described three times. That is, FIG. 21 is an analysis of the characteristics of nickel (Fe) contained in the depths of about 15 nm to about 20 nm from the surfaces of the metal plates of Examples and Comparative Examples.
  • the signal intensity in FIG. 21 is not an absolute number, but a relative value relative to the specific binding energy range measured.
  • the metal plate according to Examples and Comparative Examples has a signal intensity value (c / s, XPS counting rate) corresponding to binding energy at a depth of about 15 nm to about 20 nm from the surface Lt; / RTI >
  • the metal sheet according to the Examples and Comparative Examples can have a peak strength value for pure nickel (Ni metal) in the third range, which is a bonding energy range of about 852.3 eV to about 852.9 eV, and has a peak energy value of about 855.9 eV to about 856.5 eV (Ni (OH) < 2 >) in the fourth range, which is the binding energy range of the Ni (OH) 2- eV.
  • the metal plates according to Examples and Comparative Examples can have a third peak intensity as a maximum peak intensity value for pure nickel at a depth of about 20 nm from a depth of about 15 nm from the surface, And a fourth peak intensity that is a maximum peak intensity value for nickel hydroxide (Ni (OH) 2 ).
  • the third peak intensity with respect to the fourth peak intensity may be about 1.3 or less.
  • the third peak intensity for the fourth peak intensity may be about 1.1 or less.
  • the third peak intensity is 15170 and the fourth peak intensity is 14845. Accordingly, the third peak intensity for the fourth peak intensity may be about 1.02.
  • the third peak intensity with respect to the fourth peak intensity may be larger than that of the embodiment.
  • the third peak intensity is 25035 and the fourth peak intensity is 16352.5. Accordingly, the third peak intensity for the fourth peak intensity may be about 1.53. That is, the ratio of the nickel hydroxide included in the outer region of the metal plate according to the comparative example may be significantly lower than that of the metal plate according to the embodiment.
  • FIGS. 22 and 23 are photographs of micrographs taken from the plane of a small-sized hole of an evaporation mask according to Examples and Comparative Examples.
  • FIG. 22 and Fig. 23 show the result of forming a small-sized hole (V1) with a metal plate according to Examples and Comparative Examples, and observing its surface with a microscope.
  • the metal plate according to the embodiment can form an oxide film having an oxygen concentration of 5 at% or more on the surface, and the thickness of the oxide film can be about 40 nm or more.
  • the comparative example as shown in FIG. 23, it can be seen that the shape of the small hole formed by over-etching the surface of the metal plate can be uneven and is connected to the adjacent small hole.
  • the embodiment can change the surface atom concentration of the metal plate 10 and control the thickness of the formed oxide film. Accordingly, the thickness of the oxide film formed on the surface of the metal plate 10 can be controlled and the quality can be improved. Therefore, the adhesion between the metal plate 10 and the photoresist layer for forming the photoresist layer such as the small hole V1 and the large hole V2 can be improved, the etching factor can be improved, and the small hole V1 and / It is possible to prevent the metal plate 10 from being over-etched in the etching process for forming the facing surface V2. Therefore, it is possible to uniformly and precisely form the through-holes TH formed by the small-sized holes V1 and the large-sized holes V2. In the case of depositing organic materials by using the vapor deposition mask 100 according to the embodiment, It is possible to uniformly deposit the organic material on the substrate and to minimize the deposition defect.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Conformément à un mode de réalisation, la présente invention concerne une plaque métallique d'un alliage de fer (Fe)-nickel utilisée dans la fabrication d'un masque de dépôt pour un dépôt de pixels de diode électroluminescente organique (DELO), une valeur maximale d'une concentration d'atomes de fer (Fe) étant de 40 % atomique ou moins, une valeur maximale d'une concentration d'atomes de nickel (Ni) étant de 25 % atomique ou moins, et une valeur maximale d'une concentration d'atomes d'oxygène (O) allant de 55 % atomique à 65 % atomique dans une région de profondeur de 15 nm à partir de la surface du matériau métallique. De plus, conformément à un mode de réalisation, la présente invention concerne un masque de dépôt comprenant un matériau métallique à base d'alliage de fer (Fe)-nickel (Ni) pour un dépôt de pixels de DELO, le masque de dépôt comprenant une région de dépôt pour un dépôt et une région de non-dépôt autre que la région de dépôt, la région de dépôt comprenant une pluralité de parties effectives et de parties non effectives autres que les parties effectives, la partie effective comprenant une pluralité de trous de petite surface qui sont formés sur une surface du matériau métallique, une pluralité de trous de grande surface qui sont formés sur l'autre surface opposée à la première surface du matériau métallique, une pluralité de trous traversants qui font communiquer les trous de petite surface avec les trous de grande surface, et une partie d'îlot qui est formée sur l'autre surface du matériau métallique et est positionnée entre les trous traversants, au moins l'une de la région de non-dépôt, de la partie non effective et de la partie d'îlot ayant une valeur maximale de la concentration d'atomes de fer (Fe) de 40 % atomique ou moins, une valeur maximale de la concentration de nickel (Ni) de 25 % atomique ou moins, et une valeur maximale de la concentration d'atomes d'oxygène (O) de 55 % atomique à 65 % atomique au niveau d'une région de profondeur de 15 nm à partir de la surface du matériau métallique. De plus, conformément à un mode de réalisation, la présente invention concerne un procédé de fabrication d'un masque de dépôt pour un dépôt de pixels de DELO, et le procédé comprend une étape de préparation d'une plaque métallique, une étape de traitement des surfaces de la plaque métallique, une étape de dépôt d'une première couche de résine photosensible sur une surface de la plaque métallique et de formation de motifs sur la première couche de résine photosensible, une étape de formation d'une première rainure sur une surface de la plaque métallique à travers une partie ouverte de la première couche de résine photosensible à motifs, une étape de dépôt d'une seconde couche de résine photosensible sur l'autre surface opposée à la première surface de la plaque métallique et de formation de motifs sur la seconde couche de résine photosensible, une étape de formation d'une seconde rainure à travers une partie ouverte de la seconde couche de résine photosensible à motifs et de formation d'un trou traversant faisant communiquer la première rainure avec la seconde rainure.
PCT/KR2018/015062 2017-12-07 2018-11-30 Masque de dépôt et son procédé de fabrication WO2019112253A1 (fr)

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KR1020227027739A KR102621183B1 (ko) 2017-12-07 2018-11-30 증착용 마스크 및 이의 제조 방법
KR1020207015990A KR102435341B1 (ko) 2017-12-07 2018-11-30 증착용 마스크 및 이의 제조 방법
KR1020227039180A KR20220154846A (ko) 2017-12-07 2018-11-30 금속판, 증착용 마스크 및 이의 제조 방법
CN201880078596.3A CN111433932B (zh) 2017-12-07 2018-11-30 沉积掩模及其制造方法
CN202410059773.0A CN117998943A (zh) 2017-12-07 2018-11-30 沉积掩模及其制造方法
KR1020227027745A KR102542819B1 (ko) 2017-12-07 2018-11-30 증착용 마스크 및 이의 제조 방법

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KR20160146901A (ko) * 2015-02-10 2016-12-21 다이니폰 인사츠 가부시키가이샤 증착 마스크의 제조 방법, 증착 마스크를 제작하기 위해 사용되는 금속판 및 그 제조 방법
KR20170096373A (ko) * 2016-02-16 2017-08-24 엘지이노텍 주식회사 금속판, 증착용마스크 및 이를 이용한 oled 패널
KR20170112673A (ko) * 2016-04-01 2017-10-12 엘지이노텍 주식회사 증착용마스크 및 이를 이용한 oled 패널
KR20170112810A (ko) * 2016-04-01 2017-10-12 엘지이노텍 주식회사 금속판, 증착용마스크 및 이를 이용한 oled 패널

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JP2003064451A (ja) * 2001-06-11 2003-03-05 Hitachi Ltd 複合傾斜合金板とその製造方法およびこの複合傾斜合金板を用いたシャドウマスクを備えたカラー陰極線管
JP5626491B1 (ja) 2014-03-06 2014-11-19 大日本印刷株式会社 金属板、金属板の製造方法、および金属板を用いて蒸着マスクを製造する方法

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Publication number Priority date Publication date Assignee Title
JP2014133932A (ja) * 2013-01-11 2014-07-24 Dainippon Printing Co Ltd 蒸着マスクの製造方法
KR20160146901A (ko) * 2015-02-10 2016-12-21 다이니폰 인사츠 가부시키가이샤 증착 마스크의 제조 방법, 증착 마스크를 제작하기 위해 사용되는 금속판 및 그 제조 방법
KR20170096373A (ko) * 2016-02-16 2017-08-24 엘지이노텍 주식회사 금속판, 증착용마스크 및 이를 이용한 oled 패널
KR20170112673A (ko) * 2016-04-01 2017-10-12 엘지이노텍 주식회사 증착용마스크 및 이를 이용한 oled 패널
KR20170112810A (ko) * 2016-04-01 2017-10-12 엘지이노텍 주식회사 금속판, 증착용마스크 및 이를 이용한 oled 패널

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KR20220118557A (ko) 2022-08-25
KR102542819B1 (ko) 2023-06-14
CN117998943A (zh) 2024-05-07
KR20220154846A (ko) 2022-11-22
CN111433932A (zh) 2020-07-17
KR102621183B1 (ko) 2024-01-05
KR20200078625A (ko) 2020-07-01
CN111433932B (zh) 2024-02-09
KR20220116364A (ko) 2022-08-22
KR102435341B1 (ko) 2022-08-24

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