WO2019109747A1 - Ohmic contact preparation method for gallium nitride electronic device - Google Patents

Ohmic contact preparation method for gallium nitride electronic device Download PDF

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WO2019109747A1
WO2019109747A1 PCT/CN2018/111613 CN2018111613W WO2019109747A1 WO 2019109747 A1 WO2019109747 A1 WO 2019109747A1 CN 2018111613 W CN2018111613 W CN 2018111613W WO 2019109747 A1 WO2019109747 A1 WO 2019109747A1
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ohmic contact
gallium nitride
titanium
electronic device
metal electrode
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PCT/CN2018/111613
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Chinese (zh)
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李国强
刘智崑
陈丁波
万利军
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华南理工大学
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H01L29/454—Ohmic electrodes on AIII-BV compounds on thin film AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes

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  • the present invention relates to the field of semiconductor technology, and in particular to a method for preparing an ohmic contact of a gallium nitride electronic device.
  • GaN Gallium nitride
  • Si silicon
  • the GaN heterojunction has a high electron mobility and an electron gas density. Therefore, GaN materials are widely used in the fields of high electron mobility transistor (HEMT), LED, optical detection and other electronic devices or optoelectronic devices.
  • HEMT high electron mobility transistor
  • Ohmic contact technology is one of the key technologies for implementing high performance GaN devices.
  • the method of ohmic contact preparation, the morphology and properties of the material directly affect the total conductance and total output power of the device.
  • the ideal ohmic contact preparation method should meet the following requirements: 1. Negligible contact resistance. 2.
  • the preparation process does not affect the electrical properties of the film. At the same time, the rapid preparation process is beneficial to the improvement of production efficiency in large-area production.
  • GaN HEMT the widely adopted standard preparation method is rapid high temperature annealing.
  • a Ti/Al/Ni/Au multilayer metal structure is used to deposit a metal on the surface of the semiconductor by evaporation or sputtering, and then annealed at a high temperature of 800 ° C to 900 ° C for 30 s to 180 s in a rapid annealing furnace to form an ohmic contact.
  • the ohmic contact of the GaN HEMT formed by this method can reach a contact resistance of 1 ⁇ mm or less.
  • this method still has shortcomings: the GaN HEMT increases resistance after annealing.
  • the ohmic contact method of the GaN HEMT has been reported as well as microwave heating and laser activation of dopant ions.
  • the microwave heating method achieves high temperature annealing by a mechanism in which a metal electrode and an AlGaN/GaN heterojunction absorb microwave energy. Although the ohmic contact of the GaN HEMT formed by this method has a low contact resistance, the film square resistance still has a significant rise after microwave heating.
  • the laser-activated doping method mainly uses the mechanism of ultraviolet laser pulse to irradiate GaN material to activate Si ions implanted into GaN to realize ohmic contact. Compared with the standard rapid high-temperature annealing, this method not only increases the two steps of Si ion implantation and laser activation, but also requires several steps such as photolithography and de-glue, which significantly increases the number of steps in the overall process. In addition, the ultraviolet laser pulse damages the GaN material that is not implanted with Si ions, thereby adversely affecting the square resistance of the film.
  • a method for preparing an ohmic contact of a gallium nitride electronic device wherein a titanium-containing metal electrode is scanned by a laser under a nitrogen atmosphere, and a chemical reaction of a titanium-containing metal electrode with nitrogen is initiated by a laser to form an ohmic contact of titanium nitride; a titanium metal per unit area
  • the total chemical reaction time of the electrode is less than 0.01 s.
  • the laser power density is 1 ⁇ 10 8 to 1 ⁇ 10 11 W/m 2
  • the beam scanning speed is 1 to 1000 mm/s.
  • the scan is a single scan.
  • the titanium-containing metal electrode includes a titanium metal layer and an oxidation preventing layer.
  • the titanium metal layer has a thickness of 1 nm to 100 nm.
  • the oxidation preventing layer is a gold layer or a platinum layer.
  • the oxidation preventing layer has a thickness of 5 nm to 100 nm.
  • the present invention is a highly accurate method of selecting a region in which the laser can be focused to 1 micron or less and irradiated only on the metal electrode without being irradiated onto the GaN film. Therefore, the present invention does not affect the electrical properties of the GaN thin film.
  • the present invention is a method for rapidly forming a low contact resistance.
  • the laser causes a local high temperature environment in a very short period of time.
  • a large number of vacancies are formed on the surface of the GaN to increase the carrier concentration, and on the other hand, a chemical reaction between titanium and nitrogen is initiated to form a low-resistance titanium nitride layer. Under this mechanism, the laser-swept titanium-containing metal layer is chemically converted into a titanium nitride electrode with low contact resistance.
  • the present invention has the following advantages and benefits:
  • the preparation method of the invention does not affect the electrical properties of the GaN film, the contact resistance is low, and the method has simple steps and requires less preparation time.
  • the invention can improve the total conductance and total output power of GaN electronic devices and optoelectronic devices, and is of great significance for realizing high performance GaN devices and improving production efficiency.
  • Figure 1 is a current-voltage test curve between two metal electrodes before laser-induced chemical reaction of an embodiment of the present invention.
  • FIG. 2 is a schematic view showing a method of preparing a ohmic contact by a laser-induced chemical reaction according to an embodiment of the present invention.
  • 3 is an electron micrograph of the surface of a metal electrode after laser-induced chemical reaction according to an embodiment of the present invention.
  • a sample of a device with a metal electrode (including substrate material 5, GaN HEMT heterojunction 4, titanium-containing metal electrode 3, nitrogen gas 2, laser in order from bottom to top) 1) Placed on a sample stage made of copper, and a continuous laser with a wavelength of 532 nm is used to align the metal electrode to initiate a chemical reaction, and the reaction gas is nitrogen.
  • the power of the laser is 3 W
  • the diameter of the beam is 5 ⁇ m
  • the scanning speed is 2 mm/s
  • the number of scanning passes is one. Under these conditions, the total chemical reaction time per unit area of the metal electrode is less than 0.01 s.
  • Figure 3 is an electron micrograph of the surface of a metal electrode after laser chemical reaction.
  • the effect of the laser is limited to an electrode material having a width of about 5 ⁇ m, that is, it does not affect the square resistance of the GaN film outside the electrode.
  • the current-voltage test curve between the two metal electrodes is shown in Figure 4. The current value is at mA level and the curve shows that the metal electrode is in ohmic contact after laser-induced chemical reaction. After the measurement by the TLM method, the contact resistance is less than 1 ⁇ mm.
  • the oxidation preventing layer may also be a platinum layer, and any other principles and principles without departing from the spirit of the present invention.
  • the changes, modifications, substitutions, combinations, and simplifications that are made below are equivalent substitutions and are included in the scope of the present invention.

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Abstract

An ohmic contact preparation method for a gallium nitride electronic device. In a nitrogen (2) atmosphere, a laser (1) is used to scan a titanium-containing metal electrode (3), and a chemical reaction of the titanium-containing metal electrode (3) and nitrogen (2) is initiated by means of the laser (1), so as to form an ohmic contact of titanium nitride, wherein the total chemical reaction time per unit area of the titanium-containing metal electrode is less than 0.01 s. The contact resistance of the obtained ohmic contact is small, the reaction time is short, and the electrical performance of a GaN thin film material is not affected. The present invention relates to a rapid ohmic contact preparation method for a gallium nitride device, which is of great significance in achieving a high-performance gallium nitride electronic device and improving the production efficiency.

Description

氮化镓电子器件的欧姆接触的制备方法Method for preparing ohmic contact of gallium nitride electronic device 技术领域Technical field
本发明涉及半导体技术领域，特别涉及氮化镓电子器件的欧姆接触的制备方法。The present invention relates to the field of semiconductor technology, and in particular to a method for preparing an ohmic contact of a gallium nitride electronic device.
背景技术Background technique
氮化镓(GaN)材料和硅(Si)相比，具有更大的禁带宽度。同时GaN异质结具有较高的电子迁移率和电子气密度。所以，目前GaN材料在高电子迁移率晶体管(HEMT)、LED、光探测等电子器件或光电子器件领域被广泛的应用。Gallium nitride (GaN) materials have a larger band gap than silicon (Si). At the same time, the GaN heterojunction has a high electron mobility and an electron gas density. Therefore, GaN materials are widely used in the fields of high electron mobility transistor (HEMT), LED, optical detection and other electronic devices or optoelectronic devices.
欧姆接触技术是实现高性能GaN器件的关键技术之一。欧姆接触制备的方法、材料的形貌与性能直接影响器件的总电导和总输出功率。理想的欧姆接触制备方法应该满足以下要求1.可忽略不计的接触电阻。2.制备过程不影响薄膜的电性能。同时快速的制备过程有利于大面积生产时生产效率的提高。Ohmic contact technology is one of the key technologies for implementing high performance GaN devices. The method of ohmic contact preparation, the morphology and properties of the material directly affect the total conductance and total output power of the device. The ideal ohmic contact preparation method should meet the following requirements: 1. Negligible contact resistance. 2. The preparation process does not affect the electrical properties of the film. At the same time, the rapid preparation process is beneficial to the improvement of production efficiency in large-area production.
以GaN HEMT为例，广泛采取的标准制备方法是快速高温退火。采用Ti/Al/Ni/Au多层金属结构，通过蒸发或者溅射的方式在半导体表面沉积金属，然后在快速退火炉用800℃-900℃的高温退火30s-180s，从而形成欧姆接触。采用该方法形成的GaN HEMT欧姆接触，接触电阻可以达到1Ωmm甚至更低。然而该方法仍有不足之处：GaN HEMT在退火后方阻上升。研究显示在高温800℃下退火会对AlGaN/GaN异质结产生不可逆的损害，(K.Shiojima et.al.The Japanese Society of Applied Physics,Vol.43,pp.100-105,2004)。Taking GaN HEMT as an example, the widely adopted standard preparation method is rapid high temperature annealing. A Ti/Al/Ni/Au multilayer metal structure is used to deposit a metal on the surface of the semiconductor by evaporation or sputtering, and then annealed at a high temperature of 800 ° C to 900 ° C for 30 s to 180 s in a rapid annealing furnace to form an ohmic contact. The ohmic contact of the GaN HEMT formed by this method can reach a contact resistance of 1 Ωmm or less. However, this method still has shortcomings: the GaN HEMT increases resistance after annealing. Studies have shown that annealing at a high temperature of 800 °C can cause irreversible damage to the AlGaN/GaN heterojunction (K. Shiojima et. al. The Japanese Society of Applied Physics, Vol. 43, pp. 100-105, 2004).
除了快速高温退火的方法，现已报道的GaN HEMT的欧姆接触的方法还有微波加热和激光激活掺杂离子的方法。In addition to the rapid high temperature annealing method, the ohmic contact method of the GaN HEMT has been reported as well as microwave heating and laser activation of dopant ions.
微波加热方法通过金属电极和AlGaN/GaN异质结吸收微波能量的机制从而实现高温退火。虽然采用该方法形成的GaN HEMT欧姆接触，接触电阻较低，但薄膜方阻在微波加热后仍有明显的上升。The microwave heating method achieves high temperature annealing by a mechanism in which a metal electrode and an AlGaN/GaN heterojunction absorb microwave energy. Although the ohmic contact of the GaN HEMT formed by this method has a low contact resistance, the film square resistance still has a significant rise after microwave heating.
激光激活掺杂离子方法主要利用紫外激光脉冲辐照GaN材料从而激活注入GaN的Si离子的机制实现欧姆接触。和标准的快速高温退火相比，该方法不仅增加了Si离子注入和激光激活两个步骤，而且其间需要增加光刻、去胶等若 干步骤，明显提高了总体工序的步骤数量、。除此之外，紫外激光脉冲会对未注入Si离子的GaN材料产生损伤，从而对薄膜的方阻产生负面影响。The laser-activated doping method mainly uses the mechanism of ultraviolet laser pulse to irradiate GaN material to activate Si ions implanted into GaN to realize ohmic contact. Compared with the standard rapid high-temperature annealing, this method not only increases the two steps of Si ion implantation and laser activation, but also requires several steps such as photolithography and de-glue, which significantly increases the number of steps in the overall process. In addition, the ultraviolet laser pulse damages the GaN material that is not implanted with Si ions, thereby adversely affecting the square resistance of the film.
综上所述，鉴于现有GaN器件欧姆接触制备方法仍存在不足之处从而降低了器件的性能，有必要发明一种方法，使得电极材料在形成欧姆接触后，不仅有较低的接触电阻，而且不会降低GaN薄膜的电性能。同时该方法步骤简单，所需要的制备时间也较短。In summary, in view of the existing GaN device ohmic contact preparation method still has deficiencies and thus the performance of the device, it is necessary to invent a method, so that the electrode material not only has a low contact resistance after forming an ohmic contact, Moreover, the electrical properties of the GaN film are not lowered. At the same time, the method has simple steps and the preparation time required is also short.
发明内容Summary of the invention
为了克服现有技术的上述缺点与不足，本发明的目的在于提供一种氮化镓电子器件的欧姆接触的制备方法，在极短的时间内就能实现性能良好的欧姆接触。In order to overcome the above disadvantages and deficiencies of the prior art, it is an object of the present invention to provide a method for preparing an ohmic contact of a gallium nitride electronic device, which can realize an ohmic contact with good performance in a very short time.
本发明的目的通过以下技术方案实现：The object of the invention is achieved by the following technical solutions:
氮化镓电子器件的欧姆接触的制备方法，在氮气氛围下，采用激光扫描含钛金属电极，通过激光引发含钛金属电极与氮气的化学反应，形成氮化钛欧姆接触；单位面积含钛金属电极的总化学反应时间小于0.01s。A method for preparing an ohmic contact of a gallium nitride electronic device, wherein a titanium-containing metal electrode is scanned by a laser under a nitrogen atmosphere, and a chemical reaction of a titanium-containing metal electrode with nitrogen is initiated by a laser to form an ohmic contact of titanium nitride; a titanium metal per unit area The total chemical reaction time of the electrode is less than 0.01 s.
所述激光功率密度为1×10 8～1×10 11W/m 2，光束扫描速度为1～1000mm/s。 The laser power density is 1 × 10 8 to 1 × 10 11 W/m 2 , and the beam scanning speed is 1 to 1000 mm/s.
所述扫描为单次扫描。The scan is a single scan.
所述含钛金属电极包括钛金属层和防氧化层。The titanium-containing metal electrode includes a titanium metal layer and an oxidation preventing layer.
所述钛金属层的厚度为1nm～100nm。The titanium metal layer has a thickness of 1 nm to 100 nm.
所述防氧化层为金层或铂层。The oxidation preventing layer is a gold layer or a platinum layer.
所述防氧化层的厚度为5nm～100nm。The oxidation preventing layer has a thickness of 5 nm to 100 nm.
本发明的原理如下：The principle of the invention is as follows:
首先本发明是一种高精度的选区制备方法，激光可聚焦到1微米甚至更小，仅辐照于金属电极之上，而不会照射到GaN薄膜上。因此，本发明不会对GaN薄膜的电性能产生影响。其次，本发明是一种可快速形成低接触电阻的方法。激光在极短的时间内导致局部的高温环境，一方面导致GaN表面形成大量的空位提高载流子浓度，另一方面引发了钛和氮气的化学反应，形成了低电阻的氮化钛层。在这个机制作用下，激光扫过的含钛的金属层就化学反应转变成低接触电阻的氮化钛电极。First of all, the present invention is a highly accurate method of selecting a region in which the laser can be focused to 1 micron or less and irradiated only on the metal electrode without being irradiated onto the GaN film. Therefore, the present invention does not affect the electrical properties of the GaN thin film. Secondly, the present invention is a method for rapidly forming a low contact resistance. The laser causes a local high temperature environment in a very short period of time. On the one hand, a large number of vacancies are formed on the surface of the GaN to increase the carrier concentration, and on the other hand, a chemical reaction between titanium and nitrogen is initiated to form a low-resistance titanium nitride layer. Under this mechanism, the laser-swept titanium-containing metal layer is chemically converted into a titanium nitride electrode with low contact resistance.
与现有技术相比，本发明具有以下优点和有益效果：Compared with the prior art, the present invention has the following advantages and benefits:
本发明的制备方法不会影响GaN薄膜的电性能，接触电阻较低，而且该方法步骤简单，所需要的制备时间也较短。本发明能够提升GaN电子器件和光电 器件的总电导和总输出功率，对于实现高性能GaN器件及提升生产效率具有重要的意义。The preparation method of the invention does not affect the electrical properties of the GaN film, the contact resistance is low, and the method has simple steps and requires less preparation time. The invention can improve the total conductance and total output power of GaN electronic devices and optoelectronic devices, and is of great significance for realizing high performance GaN devices and improving production efficiency.
附图说明DRAWINGS
图1为本发明的实施例的激光致化学反应前两个金属电极间的电流-电压测试曲线。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a current-voltage test curve between two metal electrodes before laser-induced chemical reaction of an embodiment of the present invention.
图2为本发明的实施例的激光致化学反应形成欧姆接触的制备方法的示意图。2 is a schematic view showing a method of preparing a ohmic contact by a laser-induced chemical reaction according to an embodiment of the present invention.
图3为本发明的实施例的激光致化学反应后金属电极的表面的电子显微镜照片。3 is an electron micrograph of the surface of a metal electrode after laser-induced chemical reaction according to an embodiment of the present invention.
图4为本发明的实施例的激光致化学反应后两个金属电极间的电流-电压测试曲线。4 is a current-voltage test curve between two metal electrodes after laser-induced chemical reaction of an embodiment of the present invention.
具体实施方式Detailed ways
下面结合实施例，对本发明作进一步地详细说明，但本发明的实施方式不限于此。The present invention will be further described in detail below with reference to the embodiments, but the embodiments of the present invention are not limited thereto.
实施例Example
本实施例的氮化镓电子器件的欧姆接触的制备方法如下：The method for preparing the ohmic contact of the gallium nitride electronic device of the present embodiment is as follows:
(1)采用光刻方法在GaN HEMT异质结材料上定义金属电极的结构形状；(1) defining a structural shape of the metal electrode on the GaN HEMT heterojunction material by photolithography;
(2)金属电极材料的沉积，采用电子束蒸发的方法依次沉积20nm的Ti金属层，20nm的Au金属层；(2) deposition of metal electrode material, depositing 20 nm Ti metal layer and 20 nm Au metal layer by electron beam evaporation;
(3)将带有金属电极的器件样品放在丙酮中超声，形成金属电极。在这个步骤后两个金属电极间的电流-电压测试曲线如图1所示，电流值在μA级，曲线显示金属电极在激光致化学反应前为肖脱基接触。(3) A sample of the device with a metal electrode was ultrasonically placed in acetone to form a metal electrode. The current-voltage test curve between the two metal electrodes after this step is shown in Figure 1. The current value is in the order of μA. The curve shows that the metal electrode is a Schottky contact before the laser-induced chemical reaction.
(4)激光致化学反应：如图2所示，将带有金属电极的器件样品(由下至上依次包括衬底材料5、GaN HEMT异质结4、含钛金属电极3、氮气2、激光1)放在铜制作的样品台上，用连续的波长为532nm的激光对准金属电极引发化学反应，反应气体为氮气。激光的功率为3W,光束的直径为5μm，扫描速度为2mm/s,扫描通过次数为1次。在这种条件下，单位面积金属电极的总化学反应时间小于0.01s。图3是激光致化学反应后金属电极的表面的电子显微镜照片。可见激光的效应被限制在约5μm宽度的电极材料上，也就说不会对电极外GaN薄膜的方阻产生影响。两个金属电极间的电流-电压测试曲线如图4所示。电流 值在mA级，曲线显示金属电极在激光致化学反应后为欧姆接触。通过TLM法测量计算后，其接触电阻小于1Ωmm。(4) Laser-induced chemical reaction: as shown in Fig. 2, a sample of a device with a metal electrode (including substrate material 5, GaN HEMT heterojunction 4, titanium-containing metal electrode 3, nitrogen gas 2, laser in order from bottom to top) 1) Placed on a sample stage made of copper, and a continuous laser with a wavelength of 532 nm is used to align the metal electrode to initiate a chemical reaction, and the reaction gas is nitrogen. The power of the laser is 3 W, the diameter of the beam is 5 μm, the scanning speed is 2 mm/s, and the number of scanning passes is one. Under these conditions, the total chemical reaction time per unit area of the metal electrode is less than 0.01 s. Figure 3 is an electron micrograph of the surface of a metal electrode after laser chemical reaction. It can be seen that the effect of the laser is limited to an electrode material having a width of about 5 μm, that is, it does not affect the square resistance of the GaN film outside the electrode. The current-voltage test curve between the two metal electrodes is shown in Figure 4. The current value is at mA level and the curve shows that the metal electrode is in ohmic contact after laser-induced chemical reaction. After the measurement by the TLM method, the contact resistance is less than 1 Ωmm.
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受所述实施例的限制，如防氧化层还可以为铂层，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited by the embodiments. For example, the oxidation preventing layer may also be a platinum layer, and any other principles and principles without departing from the spirit of the present invention. The changes, modifications, substitutions, combinations, and simplifications that are made below are equivalent substitutions and are included in the scope of the present invention.

Claims (7)

  1. 氮化镓电子器件的欧姆接触的制备方法，其特征在于，在氮气氛围下，采用激光扫描含钛金属电极，通过激光引发含钛金属电极与氮气的化学反应，形成氮化钛欧姆接触；单位面积含钛金属电极的总化学反应时间小于0.01s。A method for preparing an ohmic contact of a gallium nitride electronic device, characterized in that, under a nitrogen atmosphere, a titanium-containing metal electrode is scanned by a laser, and a chemical reaction of a titanium-containing metal electrode with nitrogen is induced by a laser to form an ohmic contact of titanium nitride; The total chemical reaction time of the area containing the titanium metal electrode is less than 0.01 s.
  2. 根据权利要求1所述的氮化镓电子器件的欧姆接触的制备方法，其特征在于，所述激光功率密度为1×10 8～1×10 11W/m 2，光束扫描速度为1～1000mm/s。 The method for preparing an ohmic contact of a gallium nitride electronic device according to claim 1, wherein the laser power density is 1×10 8 to 1×10 11 W/m 2 , and the beam scanning speed is 1 to 1000 mm. /s.
  3. 根据权利要求1或2所述的氮化镓电子器件的欧姆接触的制备方法，其特征在于，所述扫描为单次扫描。The method of preparing an ohmic contact of a gallium nitride electronic device according to claim 1 or 2, wherein the scanning is a single scan.
  4. 根据权利要求1所述的氮化镓电子器件的欧姆接触的制备方法，其特征在于，所述含钛金属电极包括钛金属层和防氧化层。The method of preparing an ohmic contact of a gallium nitride electronic device according to claim 1, wherein the titanium-containing metal electrode comprises a titanium metal layer and an oxidation preventing layer.
  5. 根据权利要求4所述的氮化镓电子器件的欧姆接触的制备方法，其特征在于，所述钛金属层的厚度为1nm～100nm。The method of producing an ohmic contact of a gallium nitride electronic device according to claim 4, wherein the titanium metal layer has a thickness of from 1 nm to 100 nm.
  6. 根据权利要求4所述的氮化镓电子器件的欧姆接触的制备方法，其特征在于，所述防氧化层为金层或铂层。The method of preparing an ohmic contact of a gallium nitride electronic device according to claim 4, wherein the oxidation preventing layer is a gold layer or a platinum layer.
  7. 根据权利要求4或6所述的氮化镓电子器件的欧姆接触的制备方法，其特征在于，所述防氧化层的厚度为5nm～100nm。The method of producing an ohmic contact of a gallium nitride electronic device according to claim 4 or 6, wherein the anti-oxidation layer has a thickness of 5 nm to 100 nm.
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