WO2019103570A1 - Cellule solaire à contact sélectif de support et son procédé de fabrication - Google Patents

Cellule solaire à contact sélectif de support et son procédé de fabrication Download PDF

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Publication number
WO2019103570A1
WO2019103570A1 PCT/KR2018/014694 KR2018014694W WO2019103570A1 WO 2019103570 A1 WO2019103570 A1 WO 2019103570A1 KR 2018014694 W KR2018014694 W KR 2018014694W WO 2019103570 A1 WO2019103570 A1 WO 2019103570A1
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WO
WIPO (PCT)
Prior art keywords
layer
charge
solar cell
tunnel passivation
tunnel
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PCT/KR2018/014694
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English (en)
Korean (ko)
Inventor
이준신
박철민
안시현
한상욱
박수영
Original Assignee
성균관대학교산학협력단
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Publication of WO2019103570A1 publication Critical patent/WO2019103570A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a charge selective junction type solar cell and a manufacturing method of such a charge selective junction type solar cell.
  • the barrier height of the nitride film is important in the collection and blocking of charges and holes since the silicon oxide film has a neutral characteristic in general. However, since the thin film is thin in the tunneling oxide film, the recombination rate can be increased in charge collection have.
  • the role of the barrier of electrons and holes is the charge barrier due to the barrier height of the silicon oxide film, but since the thickness is thin, there is a problem that recombination may occur through the silicon oxide film due to the tunneling mechanism sufficiently.
  • the conventional silicon oxide film grown by thermal oxidation has a problem that productivity is deteriorated due to a long process time due to thermal stress and low growth rate in the wafer due to a high temperature process.
  • the present invention relates to the fabrication and characterization of charge selective junction solar cells using oxide film formation through plasma growth.
  • the charge polarity in the thin film is controlled through optimization of the plasma process conditions to perform charge blocking by utilizing the charge effect in addition to the barrier height.
  • a charge selective junction solar cell includes: a silicon substrate; A first tunnel passivation layer located on the front surface of the silicon substrate and capable of passing charges through tunneling; A second tunnel passivation layer located on a rear surface of the silicon substrate and capable of passing charges through tunneling; A hole selection junction layer located on the first tunnel passivation layer; An electron selection junction layer located on the second tunnel passivation layer; A first transparent conductive layer disposed on the hole-selective bonding layer; And a second transparent conductive layer positioned on the electron selection junction layer.
  • Each of the first and second tunnel passivation layers is a silicon oxide film, and the first and second tunnel passivation layers are silicon oxide films formed by a plasma oxidation growth method.
  • charge polarities within the first and second tunnel passivation layers are controlled by plasma processing conditions wherein the first tunnel passivation layer has an internal charge polarity negative and the second tunnel passivation layer has an internal charge polarity This represents the positive.
  • a method of manufacturing a charge selective junction solar cell includes: preparing a silicon substrate; Forming a first tunnel passivation layer on the front surface of the silicon substrate through which charge can pass through tunneling; Forming a second tunnel passivation layer on the back surface of the silicon substrate through which tunneling can be conducted; Forming a hole-selective bonding layer on the first tunnel passivation layer; Forming an electron-selective bonding layer on the second tunnel passivation layer; Forming a first transparent conductive layer on the hole-selective bonding layer; And forming a second transparent conductive layer on the electron selection junction layer.
  • Each of the first and second tunnel passivation layers is a silicon oxide film, and the first and second tunnel passivation layers are silicon oxide films formed by a plasma oxidation growth method.
  • charge polarities within the first and second tunnel passivation layers are controlled by plasma processing conditions wherein the first tunnel passivation layer has an internal charge polarity negative and the second tunnel passivation layer has an internal charge polarity This represents the positive.
  • a silicon oxide film (SiOx) having an excellent passivation effect and having a tunnel effect through thickness control is formed, and furthermore, the charge polarity in the thin film is controlled to effectively collect electrons and holes, Structure.
  • the characteristics of the silicon solar cell can be improved by controlling the surface passivation property and the charge polarity compared to the silicon nitride film used conventionally.
  • the present invention relates to a method and apparatus for controlling the polarity (positive or negative) of the charge in a thin film of an oxide film through optimization of process conditions in the process of manufacturing a very thin silicon oxide film having a tunneling characteristic in a manufacturing process of a carrier selective contact type (ESCL) and Hole Selective Contact Layer (HSCL), thereby improving the output characteristics of the charge selective junction type solar cell by increasing the charge collection rate in the electron selective contact layer (ESCL) and the hole selective contact layer It is a technology that can be made.
  • a carrier selective contact type (ESCL) and Hole Selective Contact Layer (HSCL)
  • FIG. 1 is a structural view of a charge selective junction type solar cell using surface passivation and charge polarity control in a tunneling oxide thin film according to an embodiment of the present invention.
  • FIG. 1 is a structural view of a charge selective junction type solar cell using surface passivation and charge polarity control in a tunneling oxide thin film according to an embodiment of the present invention.
  • a charge selective junction solar cell includes a silicon substrate 10; A first tunnel passivation layer (21) located on the front surface of the silicon substrate and capable of passing charges through tunneling; A second tunnel passivation layer 22 located on the back surface of the silicon substrate and capable of passing charges through tunneling; A hole selective bonding layer (31) located on the first tunnel passivation layer; An electron selection junction layer (32) located on the second tunnel passivation layer; A first transparent conductive layer (41) located on the hole selection junction layer; And a second transparent conductive layer (42) located on the electron selection junction layer.
  • the silicon substrate 10 may be formed of a crystalline silicon material.
  • a monocrystalline or polycrystalline silicon wafer may be used as the silicon substrate 10.
  • the first tunnel passivation layer 21 is disposed on the front surface of the silicon substrate and the second tunnel passivation layer 22 is disposed on the rear surface of the silicon substrate. However, this is the front / rear face in the case of FIG. 1, which may be mutually exchanged.
  • the first and second tunnel passivation layers 21 and 22 may be formed of an insulating material capable of tunneling charges.
  • the first and second tunnel passivation layers 21 and 22 are preferably formed of silicon oxide such as SiOx.
  • the silicon oxide film formed by the plasma oxidation growth method is used for the first and second tunnel passivation layers.
  • the charge polarity inside the first and second tunnel passivation layers can be controlled by plasma process conditions. Specifically, it is possible to control the charge polarity inside the silicon oxide film by varying the plasma power and the temperature.
  • the first tunnel passivation layer controls the internal charge polarity to be negative, and the second tunnel passivation layer controls the internal charge polarity to be positive.
  • the charge collection rate in the hole selection junction layer 31 and the electron selection junction layer 32 can be increased, and ultimately, the output of the charge selective junction type solar cell can be improved.
  • the hole selection junction layer 31 and the electron selection junction layer 32 may be formed of a thin film of various materials.
  • a p-type thin film such as VOx, MoOx, or the like is used
  • an n-type thin film is used.
  • Such a bonding layer may be deposited using deposition equipment such as PECVD, ALD, or MOCVD, or may be crystallized by heat treatment after depositing an amorphous layer when using a silicon thin film.
  • the first transparent conductive layer 41 is located on the hole selective bonding layer 31 and functions as an anti-reflective layer, and may be formed of a transparent conductive oxide (TCO).
  • TCO transparent conductive oxide
  • the first transparent conductive layer 41 may transfer charge to the first metal electrode 51.
  • the second transparent conductive layer 42 is disposed on the electron selective bonding layer 32 and may be formed of a transparent conductive oxide (TCO).
  • TCO transparent conductive oxide
  • the second transparent conductive layer 42 may be formed of the same material as the first transparent conductive layer 41, or may be formed of another material.
  • the second transparent conductive layer 42 may transfer the supplied charge to the second metal electrode 52.
  • the first metal electrode 51 is located on the first transparent conductive layer 41 and can be in electrical contact with the first transparent conductive layer 41.
  • the first metal electrode 51 includes a plurality of finger electrodes extending in one direction and a plurality of bus bars (not shown) extending in a direction crossing the finger electrodes and electrically connecting the plurality of finger electrodes Electrodes.
  • the first metal electrode 180 may be formed of a metal such as Ag, Cu, Ni, Sn, Zn, In, Ti, And may be formed of a conductive metal.
  • the second metal electrode 52 is disposed on the upper front layer and is formed of a metal such as aluminum, nickel, copper, silver, tin, zinc, indium, , Titanium (Ti), gold (Au), or the like.
  • the second metal electrode includes a plurality of finger electrodes extending in one direction and a plurality of bus bar electrodes extending in a direction crossing the finger electrodes and electrically connecting the plurality of finger electrodes can do.
  • the first and second metal electrodes 51 and 52 may be formed on the first and second transparent conductive layers, respectively, through a screen printing process.
  • FIG. 2 shows an energy diagram of a charge selective junction solar cell according to an embodiment of the present invention. Electron and hole reflections are caused by the charge-controlled tunneling passivation layer, thereby reducing the electron-hole recombination and increasing the charge collection rate in the hole-selective bonding layer 31 and the electron selective bonding layer 32, respectively And can ultimately improve the output of the charge-selective junction solar cell.
  • FIG. 3 illustrates the difference between the capacitance-voltage characteristic and the flat-band voltage of the charge-selective junction solar cell according to an embodiment of the present invention.
  • the charge-selective junction solar cell according to an embodiment of the present invention has been described so far. Hereinafter, a method of manufacturing such a charge-selective junction solar cell will be described. Repeated descriptions will be omitted for the parts overlapping with those described above.
  • FIG. 4 shows a flowchart of a method of manufacturing a charge-selective junction type solar cell according to an embodiment of the present invention.
  • a method of manufacturing a charge selective junction solar cell includes: preparing a silicon substrate (S 410); Forming a first tunnel passivation layer on the front surface of the silicon substrate through which tunneling can pass; Forming a second tunnel passivation layer on the rear surface of the silicon substrate through which tunneling may pass; Forming a hole selective bonding layer on the first tunnel passivation layer (S440); Forming (S 450) an electron selective bonding layer on the second tunnel passivation layer; Forming a first transparent conductive layer on the hole-selective bonding layer (S460); And forming a second transparent conductive layer on the electron selective bonding layer (S 470).
  • step S 410 a silicon substrate is prepared.
  • steps S 420 and S 430 a first tunnel passivation layer and a second tunnel passivation layer are formed on the front and back surfaces of the silicon substrate through tunneling, respectively. Steps S 420 and S 430 may be performed simultaneously, or may be performed simultaneously.
  • Each of the first and second tunnel passivation layers is a silicon oxide layer, and the first and second tunnel passivation layers are formed by a plasma oxidation growth method.
  • 5 is a schematic view of a process for forming first and second tunnel passivation layers.
  • a plasma process is used in the PECVD chamber and the plasma process conditions are controlled to form a charge controlled SiOx layer. Specifically, it is possible to control the charge polarity inside the silicon oxide film by varying the plasma power and the temperature.
  • the charge polarity inside the first and second tunnel passivation layers can be controlled by plasma processing conditions.
  • the first tunnel passivation layer can be controlled so that the internal charge polarity is negative, and the second tunnel passivation layer can be controlled so that the internal charge polarity is positive.
  • an electron selective bonding layer is formed on the hole-selective bonding layer and the second tunnel passivation layer, respectively, on the first tunnel passivation layer.
  • a bonding layer may be deposited using deposition equipment such as PECVD, ALD, or MOCVD, or may be crystallized by heat treatment after depositing an amorphous layer when using a silicon thin film.
  • a first transparent conductive layer is formed on the hole-selective bonding layer and a second transparent conductive layer is formed on the electron selective bonding layer, respectively.
  • the first and second transparent conductive layers may be formed by respectively depositing a conductive transparent oxide.
  • FIG. 5 is a comparison of thin films used for surface passivation of SiOx and general silicon solar cells fabricated according to one embodiment of the present invention. As shown in FIG. 5, it was confirmed that the interface trap density (D it ) of SiO x prepared according to the present invention is lower than that of other silicon nitride films and alumina.
  • FIG. 6 shows a design result of a TCAD device for a characteristic change of a solar cell according to a charge effect in an n-type solar cell.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne une technologie dans laquelle, dans le procédé de fabrication d'une cellule solaire à contact sélectif de support, la polarité (positive, négative) de charges électriques dans un film d'oxyde de silicium très mince ayant des caractéristiques d'effet tunnel peut être contrôlée par optimisation des conditions de traitement pendant la croissance du film d'oxyde, à travers lequel l'efficacité de collecte de charge dans une couche de contact sélectif d'électrons (ESCL) et dans couche de contact sélectif de trous (HSCL) peut être augmentée, de telle sorte que les caractéristiques de sortie de la cellule solaire à contact sélectif de support peuvent être améliorées.
PCT/KR2018/014694 2017-11-27 2018-11-27 Cellule solaire à contact sélectif de support et son procédé de fabrication WO2019103570A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020170159588A KR20190061325A (ko) 2017-11-27 2017-11-27 전하 선택 접합형 태양전지 및 이의 제조 방법
KR10-2017-0159588 2017-11-27

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WO2019103570A1 true WO2019103570A1 (fr) 2019-05-31

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KR102243251B1 (ko) 2019-07-18 2021-04-26 충남대학교산학협력단 후면 전극 전하 선택 접합형 태양 전지 제조 방법
KR102311190B1 (ko) 2019-11-27 2021-10-13 한국과학기술연구원 전하 선택 접합 태양전지 및 이의 제조방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110130191A (ko) * 2010-05-27 2011-12-05 주성엔지니어링(주) 태양전지 및 그 제조방법
JP2012234847A (ja) * 2009-09-08 2012-11-29 Kaneka Corp 結晶シリコン系太陽電池
WO2015140145A1 (fr) * 2014-03-19 2015-09-24 Institut Für Solarenergieforschung Gmbh Interfaces polymère conducteur/silicium au côté arrière de cellules solaires
JP2015532787A (ja) * 2012-08-31 2015-11-12 シレボ， インコーポレイテッド 基板内に浅いカウンタードーピング層を含むトンネリング接合太陽電池
KR101626248B1 (ko) * 2015-01-09 2016-05-31 고려대학교 산학협력단 실리콘 태양전지 및 이의 제조 방법
KR20160085121A (ko) * 2015-01-07 2016-07-15 엘지전자 주식회사 태양 전지

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012234847A (ja) * 2009-09-08 2012-11-29 Kaneka Corp 結晶シリコン系太陽電池
KR20110130191A (ko) * 2010-05-27 2011-12-05 주성엔지니어링(주) 태양전지 및 그 제조방법
JP2015532787A (ja) * 2012-08-31 2015-11-12 シレボ， インコーポレイテッド 基板内に浅いカウンタードーピング層を含むトンネリング接合太陽電池
WO2015140145A1 (fr) * 2014-03-19 2015-09-24 Institut Für Solarenergieforschung Gmbh Interfaces polymère conducteur/silicium au côté arrière de cellules solaires
KR20160085121A (ko) * 2015-01-07 2016-07-15 엘지전자 주식회사 태양 전지
KR101626248B1 (ko) * 2015-01-09 2016-05-31 고려대학교 산학협력단 실리콘 태양전지 및 이의 제조 방법

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