WO2019076079A1 - 通过多级结构设计制备高敏感度压阻式传感器的方法 - Google Patents

通过多级结构设计制备高敏感度压阻式传感器的方法 Download PDF

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WO2019076079A1
WO2019076079A1 PCT/CN2018/093045 CN2018093045W WO2019076079A1 WO 2019076079 A1 WO2019076079 A1 WO 2019076079A1 CN 2018093045 W CN2018093045 W CN 2018093045W WO 2019076079 A1 WO2019076079 A1 WO 2019076079A1
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basic
piezoresistive sensor
sensitivity
units
sensor
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PCT/CN2018/093045
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English (en)
French (fr)
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刘涛
段晓爽
罗姜姜
姚艳波
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苏州大学
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Priority to US16/314,820 priority Critical patent/US11120930B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/003—Apparatus or processes specially adapted for manufacturing resistors using lithography, e.g. photolithography
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
    • H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques

Definitions

  • the invention relates to a method for preparing a high-sensitivity piezoresistive sensor by multi-stage structure design, and belongs to the technical field of piezoresistive sensors.
  • a piezoresistive sensor is a sensor that converts a change in force into an electrical signal output by utilizing a characteristic that a piezoresistive material changes its resistance when subjected to stress.
  • Piezoresistive sensors are widely used for measurement and control of pressure, tension, pressure differential, and other physical quantities (such as level, acceleration, weight, strain, flow, vacuum) that can be converted into force changes.
  • Piezoresistive sensors can use metals and their oxides, semiconductor materials and carbon materials.
  • commercial piezoresistive sensors are mainly metal and silicon.
  • High sensitivity is mainly caused by stress/strain causing the disconnection/contact between the infrastructure units to cause changes in resistance and tunneling resistance.
  • the basic structural unit may be various metal nanoparticles, carbon nano materials, and metal-carbon nanotube composite nanoparticles.
  • the basic structural unit is a carbon nanotube, and the contact between the carbon nanotube and the carbon nanotube bundle under stress/strain / Disconnected to achieve high sensitivity, using platinum nanoparticles to deposit and fabricate nano-microcracks, the sensitivity of the sensor can reach 2000.
  • the object of the present invention is to provide a method for preparing a high-sensitivity piezoresistive sensor by multi-stage structure design.
  • the high-sensitivity piezoresistive sensor obtained by the method has the advantages of flexible design, simple fabrication, and the like, and various existing sensors.
  • the production method is well combined and universal.
  • the technical solution adopted by the present invention is: a method for preparing a high-sensitivity piezoresistive sensor by multi-stage structure design, comprising the following steps:
  • Step two forming a plurality of the first-level basic geometric units by array stacking to form a secondary geometric structure, and forming a contact connection region between adjacent basic geometric units, and the contact connection regions between the basic geometric units Composed of a plurality of basic structural units, the strength of the connection of the contact connection regions is adjusted by the number and arrangement of the basic structural units in the contact connection region;
  • the basic structural unit and the basic geometric unit are fabricated by photolithography, soft engraving, printing, spraying or in situ growth.
  • the basic structural unit and the basic geometric unit are fabricated by laser writing.
  • the substrate is a polyimide film having a film thickness of 10 to 2000 ⁇ m, and a preferred film thickness thereof is 100 to 150 ⁇ m.
  • the present invention has the following advantages and effects compared with the prior art:
  • the invention prepares a high-sensitivity piezoresistive sensor by multi-stage structure design, which adjusts the basic structural unit contact structure between basic geometric units by pattern design of basic geometric unit structure, and has the advantages of flexible design and simple production; There are various sensor manufacturing methods combined with good universality; the obtained sensor has ultra-high sensitivity.
  • the graphite piezoresistive sensor is obtained by laser writing polyimide, and four are designed. Different patterns of piezoresistive sensors realize multi-level contact structure design, so as to flexibly obtain piezoresistive sensors with different sensitivities, with sensitivity ranging from 1 to 10,000.
  • 1-1 is a microscopic electron micrograph 1 of a piezoresistive sensor obtained by the method of Embodiment 1 of the present invention
  • 1-2 is a microscopic electron mirror image 2 of a piezoresistive sensor obtained by the method of Embodiment 1 of the present invention
  • 2-1 is a microscopic electron micrograph 1 of a piezoresistive sensor obtained by the method of Embodiment 2 of the present invention
  • 3-1 is a microscopic electron micrograph 1 of a piezoresistive sensor obtained by the method of Embodiment 3 of the present invention.
  • 3-3 is a diagram showing changes in resistance of a piezoresistive sensor obtained in Embodiment 3 of the present invention under periodic strain;
  • a method for preparing a high-sensitivity piezoresistive sensor by multi-stage structure design comprising the following steps:
  • Step two forming a plurality of the first-level basic geometric units by array stacking to form a secondary geometric structure, and forming a contact connection region between adjacent basic geometric units, and the contact connection regions between the basic geometric units Composed of a plurality of basic structural units, the strength of the connection of the contact connection regions is adjusted by the number and arrangement of the basic structural units in the contact connection region;
  • Step 3 at least two places on the substrate to form a conductive paste to form an electrode of the piezoresistive sensor, and obtain a piezoresistive sensor.
  • the substrate is a polyimide film having a film thickness of 10 to 2000 ⁇ m, and a preferred film thickness thereof is 100 to 150 ⁇ m.
  • Embodiment 1 A method for preparing a high-sensitivity piezoresistive sensor by multi-stage structure design, using the multi-level contact design method of the present invention, firstly making the simplest contact form, laser carbonized line pattern, only basic structure Stacking and contact between units.
  • the single point obtained by the dot pattern is the basic geometric unit stacked by the basic structural unit, so that the dot pattern has a basic geometric unit and a basic geometric unit, which is a higher level of contact structure than the simple straight line pattern. Since the overlap between the basic geometric units receives the laser energy twice, the basic structural unit of the overlapping portion is weaker than other places, and it is easier to contact/disconnect under the action of external force, so the sensitivity is high.
  • the specific implementation is as follows:
  • the laser mode adopts the laser cutting mode, the cutting speed is 15mm/s, and the laser power is 8%;
  • Embodiment 2 A method for preparing a high-sensitivity piezoresistive sensor by multi-stage structure design, upgrading a basic structural unit stacking/contact structure to a basic geometric unit and a basic geometric unit stacking structure, and then designing a basic geometric unit According to the method, the contact between the basic geometric unit and the basic geometric unit is weaker, and the laser energy is changed, but the adjustment of the stacking state of the basic structural unit is achieved.
  • the specific implementation is as follows:
  • the laser mode is the scanning mode, the scanning speed is 100 mm/, the laser power is 37.5%, and the scanning interval is 150 mm;
  • the final measured sensitivity is about 100.
  • Embodiment 3 A method for preparing a high-sensitivity piezoresistive sensor by multi-stage structure design, the point contact is weaker than the line contact, so we design a stack structure of point contact between basic geometries, by the basic structure
  • the point where the unit is stacked is a first-level basic geometric unit, and the point-like basic geometric unit is arranged into a circle as a second-level basic geometric unit, and the point-circle secondary basic geometric unit array is formed into a surface to form a surface pattern, and then In the pattern, there is a first-order contact between the basic geometric units in the circle, and a contact between the two basic geometric units between the circle and the circle, thereby realizing a multi-level contact structure.
  • the point contact makes the contact portion weak, is easily broken/contacted by the stress/strain, and the multi-stage structure increases the contact point, increasing the chance of contact/disconnection of the contact point under stress/strain, thus
  • the multi-level contact design can greatly improve the sensitivity of the sensor.
  • the specific implementation is as follows:
  • the final measured sensitivity is about 500.
  • Example 4 A method for preparing a high-sensitivity piezoresistive sensor by a multi-stage structure design using a polyimide film commercially available from DuPont, having a film thickness of 125 ⁇ m, and drawing the pattern of FIG. 4 on an operation software
  • the elliptical portion is an uncarburized region, and the modulus of the carbonized region and the uncarburized region are different, a stress concentration region can be formed when the film is stretched, so that the contact portion is more easily broken/contacted, and the sensitivity of the sensor is improved.
  • the laser power is 8%
  • the scanning speed is 15mm/s
  • the sensitivity is up to 4000 when the scanning interval is 0.05mm.
  • Embodiment 5 A method for preparing a high-sensitivity piezoresistive sensor by multi-stage structure design, the multi-stage contact piezoresistive sensor prepared by laser writing can also be used for detecting high-frequency signals by monitoring water bath type and probe type
  • the ultrasonic signal is used to show that the circular-circular multi-level contact pattern sensor designed according to the method is adhered to the bottom of the plastic sample box, the sample box is placed in the water, and the ultrasonic wave is turned on while the change of the resistance is collected by the oscilloscope.
  • the results show that the signal amplitude of the water bath type ultrasonic is smaller than that of the probe type, indicating that the power of the former is small.
  • the frequency of the water bath and probe type ultrasound system are 20.07 KHz and 33.4 KHz, respectively.
  • Embodiment 6 A method for preparing a high-sensitivity piezoresistive sensor by multi-stage structure design, which simultaneously performs a stress test on a commercially available metal strain gauge and a multi-stage contact piezoresistive sensor designed according to the method, and two The sensors are respectively attached to the same steel frame with cantilever structure, placed in parallel, and a pressure of 0.125 MPa is applied at the same time, and the resistance changes of the two sensors are recorded. After repeated cycles of testing, the piezoresistive sensors change stably and reflect good.
  • the stability of the metal strain gauge is 0.1%, and the piezoresistive sensor changes by 500%.
  • the sensitivity of commercial metal strain gauges is about 2, which is used as a reference.
  • the sensitivity of multi-level contact piezoresistive sensors is 10,000.
  • the method for preparing a high-sensitivity piezoresistive sensor by multi-stage structure design adopts the pattern design of the basic geometric unit structure to adjust the basic structural unit contact structure between the basic bonding units, and has the advantages of flexible design and simple production; There are various sensor manufacturing methods combined with good universality; the sensor has ultra-high sensitivity.
  • the graphite piezoresistive sensor is obtained by laser writing polyimide, and four kinds of designs are designed.
  • the piezoresistive sensors of different patterns realize the design of multi-level contact structure, so as to flexibly obtain piezoresistive sensors with different sensitivities, and the sensitivity is 1 to 10000.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Measurement Of Force In General (AREA)

Abstract

本发明公开一种通过多级结构设计制备高敏感度压阻式传感器的方法，包括以下步骤：在基体上形成由基本结构单元组成的一级基本几何单元，所述一级基本几何单元是由若干个基本结构单元堆砌形成的二维或三维网络结构；将若干个所述一级基本几何单元通过阵列堆积组合形成二级几何结构，并形成位于相邻一级基本几何单元之间的接触连接区；在基体上至少两处点导电胶胶从而形成压阻式传感器的电极，获得压阻传感器。本发明方法获得的高敏感度压阻式传感器具有设计灵活、制作简便，与现有各种传感器制作方法结合良好，具有普适性。

Description

通过多级结构设计制备高敏感度压阻式传感器的方法 技术领域
本发明涉及一种通过多级结构设计制备高敏感度压阻式传感器的方法，属于压阻式传感器技术领域。
背景技术
压阻式传感器是利用压阻材料在应力作用时，其电阻会发生变化这一特性，将力的变化转换为电信号输出的一种传感器。压阻式传感器可广泛应用于压力、拉力、压力差和可以转变为力的变化的其他物理量(如液位、加速度、重量、应变、流量、真空度)的测量和控制。压阻式传感器可采用金属及其氧化物、半导体材料和碳材料等，目前商品化的压阻传感器主要为金属和硅两大类。敏感度(GF)是描述传感器性能的关键指标，定义为-电阻的相对变化量/应变(GF＝(ΔR/R)/ε)。
传统的金属应变片的敏感度较低，压阻敏感度只有1-2。提高敏感度的方法大致可分为两类：一是制备或利用具有对应力/应变变化非常敏感的固有电子带结构的新材料，例如本身具有压阻性能的半导体材料硅，多晶硅的敏感度大约为50，单晶硅材料其敏感度可达到200，将压阻材料的尺寸降低到微米甚至纳米级也可提高其敏感度，如CdS的单晶薄片CdS(GF～2970)、p-GaN(GF～260)、单根硅纳米线(GF～6000)以及碳纳米管(GF～200–2900)等；二是通过产生异质结构以形成颗粒状物质或复合材料。高敏感度主要来自于应力/应变引起基础结构单元之间断开/接触从而引起电阻和隧穿电阻的变化。基础结构单元可以是各种金属纳米粒子、碳纳米材料、金属-碳纳米管复合纳米粒子。比如在以聚二甲氧基硅氧烷为基体、碳纳米管为敏感元件的压阻传感器中，基础结构单元为碳纳米管，在应力/应变下，碳纳米管以及碳纳米管束之间接触/断开，从而实现高敏感度，利用铂纳米粒子沉积并制造纳米微裂纹，传感器的敏感度可达到2000。
现有商业化的传感器中，传统的金属基压阻传感器敏感度较低，而硅基压阻传感器敏感度高于金属基体，然而工艺要求高，设备投入大。同时二者敏感度受温度影响，存在着温漂。如何克服上述技术问题成为本领域技术人员努力的方向。
发明内容
本发明目的是提供一种通过多级结构设计制备高敏感度压阻式传感器的方法，此方法获 得的高敏感度压阻式传感器具有设计灵活、制作简便等优点，且与现有各种传感器制作方法结合良好，具有普适性。
为达到上述目的，本发明采用的技术方案是：一种通过多级结构设计制备高敏感度压阻式传感器的方法，包括以下步骤：
步骤一、在基体上首先形成由基本结构单元组成的一级基本几何单元，该一级基本几何单元是由若干个基本结构单元堆砌形成的二维或三维网络结构，所述基本结构单元为碳/石墨纳米粒子、金属纳米粒子或者半导体纳米粒子；
步骤二、将若干个所述一级基本几何单元通过阵列堆积组合形成二级几何结构，并形成位于相邻一级基本几何单元之间的接触连接区，基本几何单元相互之间的接触连接区由若干个基本结构单元组成，所述接触连接区连接的强弱通过接触连接区中基本结构单元的排列数量和排列方式调节；
步骤三、在基体上至少两处点导电胶从而形成压阻式传感器的电极，获得压阻传感器。
上述技术方案中进一步改进的方案如下：
1.上述方案中，所述基本结构单元和基本几何单元的制作方法为光刻、软刻、印刷、喷涂或者原位生长。
2.上述方案中，所述基本结构单元和基本几何单元的制作方法为激光书写。
3.上述方案中，所述基体为聚酰亚胺薄膜，膜厚10～2000μm，其中优选的薄膜厚度为100～150μm。
由于上述技术方案运用，本发明与现有技术相比具有下列优点和效果：
本发明通过多级结构设计制备高敏感度压阻式传感器，其通过基本几何单元结构的图案设计，调节基本几何单元之间的基本结构单元接触结构，具有设计灵活、制作简便的优点；与现有各种传感器制作方法结合良好，具有普适性；得到的传感器具有超高敏感度，在多级接触结构设计方案的指导下，利用激光书写聚酰亚胺获得石墨压阻传感器，设计了四种不同图案的压阻传感器实现多级接触结构的设计，从而灵活地获得不同敏感性的压阻传感器，敏感度为1～10000。
附图说明
附图1-1为采用本发明实施例1的方法获得的压阻式传感器的微观电镜图一；
附图1-2为采用本发明实施例1的方法获得的压阻式传感器的微观电镜图二；
附图2-1为采用本发明实施例2的方法获得的压阻式传感器的微观电镜图一；
附图2-2为采用本发明实施例2的方法获得的压阻式传感器的微观电镜图二；
附图3-1为采用本发明实施例3的方法获得的压阻式传感器的微观电镜图一；
附图3-2为本发明实施例3中对获得的压阻式传感器施加应变随时间的变化图；
附图3-3为本发明实施例3中获得的压阻传感器在周期应变下电阻的变化图；
附图4为采用本发明实施例4的方法获得的压阻式传感器的微观电镜图。
具体实施方式
下面结合实施例对本发明作进一步描述：
一种通过多级结构设计制备高敏感度压阻式传感器的方法，包括以下步骤：
步骤一、在基体上首先形成由基本结构单元组成的一级基本几何单元，该一级基本几何单元是由若干个基本结构单元堆砌形成的二维或三维网络结构，所述基本结构单元为碳/石墨纳米粒子、金属纳米粒子或者半导体纳米粒子；
步骤二、将若干个所述一级基本几何单元通过阵列堆积组合形成二级几何结构，并形成位于相邻一级基本几何单元之间的接触连接区，基本几何单元相互之间的接触连接区由若干个基本结构单元组成，所述接触连接区连接的强弱通过接触连接区中基本结构单元的排列数量和排列方式调节；
步骤三、在基体上至少两处点导电胶从而形成压阻式传感器的电极，获得压阻传感器。
上述基本结构单元和基本几何单元的制作方法为光刻、软刻、印刷、喷涂或者原位生长。
上述基本结构单元和基本几何单元的制作方法为激光书写。
上述基体为聚酰亚胺薄膜，膜厚10～2000μm，其中优选的薄膜厚度为100～150μm。
实施例1：一种通过多级结构设计制备高敏感度压阻式传感器的方法，采用本发明的多级接触设计方法，首先制作最简单的接触形式，激光碳化的线型图案，只有基本结构单元之间的堆砌、接触。
打点模式得到的单个点是由基本结构单元堆积成的基本几何单元，因此打点成线图案有了基本几何单元与基本几何单元的堆砌，是比单纯直线图案更高一级的接触结构。基本几何单元之间重叠的部分因为接受了两次激光能量，所以重叠部分的基本结构单元要比其他地方弱，在外力作用下就更容易接触/断开，因此敏感度高。具体实施如下：
(1)、采用从杜邦公司购得的聚酰亚胺薄膜，膜厚125μm，在激光操作软件上画出直线图案，长12mm；
(2)、设置激光参数：激光模式采用激光切割模式，切割速度15mm/s，激光功率8％；
(3)、调整激光的位置，在薄膜上原位碳化产生碳材料；
(4)、直线两端点银胶作为电极，制得压阻传感器，如图1-1；
(5)、用DMA进行拉伸测试，并同时记录其电阻变化，最终测得敏感度约为500。
改变参数，激光模式采用打点模式，激光速度15mm/s，激光功率8％，打点时间0.025S，打点间隔0.15mm，其他条件不变，制得的传感器敏感度可达100，如图1-2。
实施例2：一种通过多级结构设计制备高敏感度压阻式传感器的方法，将基本结构单元堆砌/接触结构升级为基本几何单元与基本几何单元的堆砌结构，接下来可以设计基本几何单元和基本几何单元之间的接触结构，根据本方法，基本几何单元与基本几何单元之间的接触越弱敏感度越高，此外，改变激光能量，可是实现对基本结构单元的堆砌状态的调节，具体实施如下：
(1)、采用从杜邦公司购得的聚酰亚胺薄膜，膜厚125μm，在激光操作软件上画出30*30mm矩形；
(2)、设置激光参数：激光模式为扫描模式，扫描速度100mm/，激光功率37.5％，扫描间隔150mm；
(3)、调整激光的位置，在薄膜上原位碳化产生碳材料；
(4)、在矩形四个角处点银胶作为电极，制得压阻传感器，如图2-1；
(5)、用DMA进行拉伸测试，并同时记录其电阻变化，最终测得敏感度约为100。
改变参数，扫描间隔为180mm，其他条件不变，制得的传感器敏感度可达300，如图2-2。保持扫描间隔180mm不变，将激光功率改为8％，扫描速度改为15mm/s，其敏感度可达1000。
实施例3：一种通过多级结构设计制备高敏感度压阻式传感器的方法，其点接触要比线接触更弱，因此我们设计基本几何结构之间的点接触的堆积结构，由基本结构单元堆积成的点为一级基本几何单元，将点状基本几何单元排列成圆圈视为二级基本几何单元，将点-圆二级基本几何单元阵列成面，形成面型图案，则在这个图案中，圆圈内有基本几何单元之间的一级接触，圆与圆之间是二级基本几何单元之间的接触，从而实现了多级接触结构。在这个结构中，点接触使接触部分较弱，容易受应力/应变影响而断开/接触，多级结构使得接触点增加，增大了应力/应变下接触点接触/断开的机会，因此，多级接触设计可以大大提高传感器的敏感度，具体实施如下：
(1)、采用从杜邦公司购得的聚酰亚胺薄膜，膜厚125μm，在操作软件上画出直径为0.5mm的圆，5*5阵列，阵列间距0.1mm；
(2)、设置激光参数：采用激光打点模式，激光功率8％，打点间隔150mm，打点时间0.013s；
(3)、调整激光的位置，在薄膜上原位碳化产生碳材料；
(4)、在图案四个角处点银胶作为电极，制得压阻传感器，如图3-1，
(5)、用DMA进行拉伸测试，并同时记录其电阻变化，最终测得敏感度约为500。
改变打点时间为0.025s，其他条件不变，制得的传感器敏感度可达1500。传感器在施加应变时的电阻反应如下图。
实施例4：一种通过多级结构设计制备高敏感度压阻式传感器的方法，其采用从杜邦公司购得的聚酰亚胺薄膜，膜厚125μm，在操作软件上画出图4的图形，其中椭圆部分是未碳化区域，利用碳化区域与未碳化区域的模量不同，在拉伸薄膜时可以形成应力集中区，使接触部分更容易断开/接触，提高传感器的敏感度，在条件为激光扫描，激光功率8％，扫描速度15mm/s，扫描间隔0.05mm时，其敏感度可达4000。
实施例5：一种通过多级结构设计制备高敏感度压阻式传感器的方法，其用激光书写制备的多级接触压阻传感器还可用于高频信号的检测，通过监测水浴式和探头式超声信号来展示，将按本方法设计的圆-圆多级接触图案传感器粘在塑料样品盒底部，将样品盒放在水中，打开超声的同时用示波器采集电阻的变化。结果显示水浴式超声的信号振幅比探头式小，说明前者功率较小。经过对采集数据的快速傅里叶变换，我们得到了水浴式和探头式超声仪的频率分别是20.07KHz和33.4KHz。
实施例6：一种通过多级结构设计制备高敏感度压阻式传感器的方法，其将市售的金属应变片与按本方法设计的多级接触压阻传感器同时进行压力测试，将两个传感器分别粘在同样的有悬臂梁结构的钢架上，平行放置，同时施加0.125MPa的压力，并记录下两个传感器的电阻变化，多次循环测试后，压阻传感器变化稳定，体现出良好的稳定性，金属应变片变化量为0.1％，压阻传感器的变化为500％。商业化的金属应变片的敏感度约为2，以此为参照，多级接触压阻传感器的敏感度达到了10000。
采用上述通过多级结构设计制备高敏感度压阻式传感器的方法，其通过基本几何单元结构的图案设计，调节基本结合单元之间的基本结构单元接触结构，具有设计灵活、制作简便；与现有各种传感器制作方法结合良好，具有普适性；得到传感器具有超高敏感度，在多级接触结构设计方案的指导下，利用激光书写聚酰亚胺获得石墨压阻传感器，设计了四种不同图案的压阻传感器实现多级接触结构的设计，从而灵活地获得不同敏感性的压阻传感器，敏感度为1～10000。
上述实施例只为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施，并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围之内。

Claims (5)

  1. 一种通过多级结构设计制备高敏感度压阻式传感器的方法，其特征在于：包括以下步骤：
    步骤一、在基体上首先形成由基本结构单元组成的一级基本几何单元，该一级基本几何单元是由若干个基本结构单元堆砌形成的二维或三维网络结构，所述基本结构单元为碳/石墨纳米粒子、金属纳米粒子或者半导体纳米粒子；
    步骤二、将若干个所述一级基本几何单元通过阵列堆积组合形成二级几何结构，并形成位于相邻一级基本几何单元之间的接触连接区，基本几何单元相互之间的接触连接区由若干个基本结构单元组成，所述接触连接区连接的强弱通过接触连接区中基本结构单元的排列数量和排列方式调节；
    步骤三、在基体上至少两处点导电胶从而形成压阻式传感器的电极，获得压阻传感器。
  2. 根据权利要求1所述的通过多级结构设计制备高敏感度压阻式传感器的方法，其特征在于：所述基本结构单元和基本几何单元的制作方法为光刻、软刻、印刷、喷涂或者原位生长。
  3. 根据权利要求1所述的通过多级结构设计制备高敏感度压阻式传感器的方法，其特征在于：所述基本结构单元和基本几何单元的制作方法为激光书写。
  4. 根据权利要求1所述的通过多级结构设计制备高敏感度压阻式传感器的方法，其特征在于：所述基体为聚酰亚胺薄膜，膜厚10～2000μm。
  5. 根据权利要求4所述的通过多级结构设计制备高敏感度压阻式传感器的方法，其特征在于：所述基体为聚酰亚胺薄膜厚度为100～150μm。
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