WO2019059728A3 - 서셉터 및 이를 포함하는 mocvd 장치 - Google Patents

서셉터 및 이를 포함하는 mocvd 장치 Download PDF

Info

Publication number
WO2019059728A3
WO2019059728A3 PCT/KR2018/011297 KR2018011297W WO2019059728A3 WO 2019059728 A3 WO2019059728 A3 WO 2019059728A3 KR 2018011297 W KR2018011297 W KR 2018011297W WO 2019059728 A3 WO2019059728 A3 WO 2019059728A3
Authority
WO
WIPO (PCT)
Prior art keywords
support surface
substrate
susceptor
same
present
Prior art date
Application number
PCT/KR2018/011297
Other languages
English (en)
French (fr)
Other versions
WO2019059728A2 (ko
Inventor
조광일
김남서
최성철
Original Assignee
주식회사 테스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020180109824A external-priority patent/KR102205613B1/ko
Application filed by 주식회사 테스 filed Critical 주식회사 테스
Priority to CN201880058624.5A priority Critical patent/CN111133128B/zh
Publication of WO2019059728A2 publication Critical patent/WO2019059728A2/ko
Publication of WO2019059728A3 publication Critical patent/WO2019059728A3/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 코팅층에 의해 지지면 상에서의 온도 편차를 감소시킨 서셉터 및 이를 포함하는 MOCVD 장치에 관한 것이다. 본 발명의 일 실시예에 따른 서셉터는, 기판과 접촉되면서 상기 기판을 지지하는 지지면 및 상기 지지면과 연결되는 측면을 가지고, 유도 코일에 의해 유도 가열됨으로써 상기 기판을 지지하면서 가열하도록 구성될 수 있다. 상기 서셉터는, 상기 유도 코일에 반응하여 유도 가열이 가능한 재질로 이루어지는 모재; 및 상기 모재의 일부 또는 전부의 표면에 코팅되어 상기 지지면의 일부 또는 전부를 형성하고, 상기 모재의 자기적 성질과 상이한 자기적 성질을 가지는 코팅층; 을 포함할 수 있다. 본 발명의 서셉터 및 이를 포함하는 MOCVD 장치에 따르면, 기판을 지지하는 지지면 상에서의 온도 불균일성을 감소시킴으로써, 기판 상에서의 보다 균일한 특성을 갖는 박막 성장이 가능하며, MOCVD 공정에 의해 성장된 기판을 사용하여 소자 제작 시 높은 수율을 얻을 수 있다. 또한, 본 발명의 MOCVD 장치에 따르면, 정확한 지지면 상의 온도를 측정할 수 있다.
PCT/KR2018/011297 2017-09-21 2018-09-21 서셉터 및 이를 포함하는 mocvd 장치 WO2019059728A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201880058624.5A CN111133128B (zh) 2017-09-21 2018-09-21 基座和具备该基座的mocvd装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20170122061 2017-09-21
KR10-2017-0122061 2017-09-21
KR10-2018-0109824 2018-09-13
KR1020180109824A KR102205613B1 (ko) 2017-09-21 2018-09-13 서셉터 및 이를 포함하는 mocvd 장치

Publications (2)

Publication Number Publication Date
WO2019059728A2 WO2019059728A2 (ko) 2019-03-28
WO2019059728A3 true WO2019059728A3 (ko) 2019-06-06

Family

ID=65811338

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2018/011297 WO2019059728A2 (ko) 2017-09-21 2018-09-21 서셉터 및 이를 포함하는 mocvd 장치

Country Status (2)

Country Link
CN (1) CN111133128B (ko)
WO (1) WO2019059728A2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113862780A (zh) * 2021-08-16 2021-12-31 西安电子科技大学芜湖研究院 一种应用于mocvd设备的可伸缩基座

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006012951A (ja) * 2004-06-23 2006-01-12 Sharp Corp 気相成長装置
JP2006070342A (ja) * 2004-09-03 2006-03-16 Sumitomo Electric Ind Ltd 気相成膜装置、サセプタおよび気相成膜方法
JP2009147170A (ja) * 2007-12-14 2009-07-02 Panasonic Corp 半導体装置の製造方法および半導体装置の製造装置
JP2009252969A (ja) * 2008-04-04 2009-10-29 Sumitomo Electric Ind Ltd サセプタおよび気相成長装置
JP2017022320A (ja) * 2015-07-14 2017-01-26 昭和電工株式会社 ウェハ支持台、ウェハ支持体、化学気相成長装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006012951A (ja) * 2004-06-23 2006-01-12 Sharp Corp 気相成長装置
JP2006070342A (ja) * 2004-09-03 2006-03-16 Sumitomo Electric Ind Ltd 気相成膜装置、サセプタおよび気相成膜方法
JP2009147170A (ja) * 2007-12-14 2009-07-02 Panasonic Corp 半導体装置の製造方法および半導体装置の製造装置
JP2009252969A (ja) * 2008-04-04 2009-10-29 Sumitomo Electric Ind Ltd サセプタおよび気相成長装置
JP2017022320A (ja) * 2015-07-14 2017-01-26 昭和電工株式会社 ウェハ支持台、ウェハ支持体、化学気相成長装置

Also Published As

Publication number Publication date
CN111133128A (zh) 2020-05-08
WO2019059728A2 (ko) 2019-03-28
CN111133128B (zh) 2022-04-12

Similar Documents

Publication Publication Date Title
PH12019500415A1 (en) Susceptor assembly and aerosol-generating article comprising the same
PH12021550599A1 (en) Susceptor assembly for inductively heating an aerosol-forming substrate
MX2018004535A (es) Articulo generador de aerosol, sistema generador de aerosol y metodo para fabricar un articulo generador de aerosol.
WO2020089180A3 (de) Beschichtungsvorrichtung, prozesskammer, sowie verfahren zum beschichten eines substrats und substrat beschichtet mit zumindest einer materialschicht
MY189668A (en) Apparatus for heating smokable material
MX2019011326A (es) Ensamblaje de susceptores multicapa para calentar por induccion un sustrato formador de aerosol.
TW200724705A (en) Film-forming device and film-forming method
WO2012125771A3 (en) Substrate support assembly for thin film deposition systems
EA033122B1 (ru) Способ получения подложки, покрытой набором, содержащим слой прозрачного проводящего оксида
MY192622A (en) Evaporation source
WO2012125469A3 (en) Off-angled heating of the underside of a substrate using a lamp assembly
JP2011139068A5 (ko)
PH12018501352A1 (en) Grain-oriented electrical steel sheet and method for manufacturing grain-oriented electrical steel sheet
WO2012058005A3 (en) Apparatus having improved substrate temperature uniformity using direct heating methods
WO2019059728A3 (ko) 서셉터 및 이를 포함하는 mocvd 장치
TW201612345A (en) Methods and apparatus for maintaining low non-uniformity over target life
MY177552A (en) A method of fabricating a resistive gas sensor device
BR112022003863A2 (pt) Elemento de aquecimento susceptor formado de material de memória de forma para dispositivo gerador de aerossol
PH12019500371A1 (en) A method of manufacturing an insulation layer on silicon carbide and a semiconductor device
WO2020072203A3 (en) A thin film treatment process
EP4252563A3 (en) Induction heater comprising central and peripheral susceptor
JP2014144880A5 (ko)
EP3939760A4 (en) PROCESS FOR PRODUCTION OF A NITRIDE CERAMIC SUBSTRATE AND NITRIDE CERAMIC BASE MATERIAL
WO2020212398A3 (en) Source arrangement, deposition apparatus and method for depositing source material
EP3993951A4 (en) TEMPERATURE REGULATED SUBSTRATE HOLDER AND POLISHING COMPONENTS

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18858058

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18858058

Country of ref document: EP

Kind code of ref document: A2