WO2019052954A1 - Composant optoélectronique et procédé de fabrication d'un composant optoélectronique - Google Patents

Composant optoélectronique et procédé de fabrication d'un composant optoélectronique Download PDF

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Publication number
WO2019052954A1
WO2019052954A1 PCT/EP2018/074330 EP2018074330W WO2019052954A1 WO 2019052954 A1 WO2019052954 A1 WO 2019052954A1 EP 2018074330 W EP2018074330 W EP 2018074330W WO 2019052954 A1 WO2019052954 A1 WO 2019052954A1
Authority
WO
WIPO (PCT)
Prior art keywords
converter
particles
converter material
optoelectronic component
layer
Prior art date
Application number
PCT/EP2018/074330
Other languages
German (de)
English (en)
Inventor
Daniel Bichler
Dajana DURACH
Norbert BÖNISCH
Original Assignee
Osram Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Gmbh filed Critical Osram Gmbh
Publication of WO2019052954A1 publication Critical patent/WO2019052954A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil

Definitions

  • An optoelectronic component is specified.
  • An object to be solved is to provide an optoelectronic device with a reduced absorption of
  • Another object to be solved is to provide a method of manufacturing such a device.
  • this includes
  • optoelectronic component an optoelectronic
  • the optoelectronic semiconductor chip emits during normal operation
  • Primary radiation For example, at least 30% or at least 50% or at least 70% of the radiation emitted by the semiconductor chip is coupled out via the upper side.
  • the primary radiation is preferably around
  • a semiconductor chip is understood here and below as a separately manageable and electrically contactable element.
  • a semiconductor chip is produced in particular by singulation from a wafer composite.
  • a semiconductor chip preferably comprises exactly one originally contiguous region of the elements grown in the wafer composite
  • the semiconductor layer sequence of the semiconductor chip is preferably formed coherently.
  • the optoelectronic semiconductor chip comprises a
  • the lateral extent of the semiconductor chip measured parallel to the main extension direction of the active layer, is for example at most 1% or at most 5% greater than the lateral extent of the active layer.
  • Semiconductor chip for example, still includes the
  • the semiconductor chip thus comprises in particular a
  • the semiconductor layer sequence is based for example on a III-V
  • Compound semiconductor material is, for example, a nitride compound semiconductor material such as Al n In] __ n _ m Ga m N, or a phosphide compound semiconductor material such as Al n In] __ n _ m Ga m P, or a Arsenide compound semiconductor material such as Al n In ] __ n _ m Ga m As or Al n In ] __ n _ m Ga m AsP, where each 0 -S n ⁇ 1, 0 -S m ⁇ 1 and m + n ⁇ 1 is. It can the
  • the semiconductor layer sequence is preferably based on AlInGaN.
  • the active layer of the semiconductor layer sequence contains in particular at least one pn junction and / or at least one quantum well structure and can, for example, in
  • the semiconductor chip preferably comprises one, in particular exactly one, coherent active layer.
  • this includes
  • the optoelectronic component a converter element on the top.
  • the converter element is used in normal operation for the conversion of the primary radiation.
  • Converter element can for full conversion of the primary radiation or for partial conversion of the primary radiation
  • the converter element is, for example, in direct contact with the top side.
  • the converter element can make the top at least 80% or at least 90%
  • the converter element can also partially or completely cover lateral surfaces of the semiconductor chip extending transversely to the upper side.
  • the converter element On the upper side, the converter element has, for example, a thickness, measured perpendicularly to the upper side, of at least 5 ⁇ m or at least 10 ⁇ m or at least 20 ⁇ m or at least 50 ⁇ m or at least 70 ⁇ m. Alternatively or additionally, the thickness is, for example, at most 200 ym or
  • the converter element comprises a multiplicity of particles of a first converter material.
  • Particles are understood to be, in particular, microscopically small solids which do not react with one another directly via covalent or ionic or
  • particle has one in each spatial direction
  • the first converter material is in particular an inorganic converter material.
  • the first converter material is exclusively in the form of
  • the first converter material has a first emission spectrum.
  • the first emission spectrum lies at least partially in the visible and / or near infrared spectral range.
  • the first converter material thus converts the primary radiation during normal operation, by causing the
  • the spectrum emitted by excitation of the first converter material and subsequent transition to a lower energetic state from the first converter material is the first emission spectrum.
  • the first emission spectrum has a proportion, preferably a major proportion, in the
  • Emission spectrum understood. A measured during the operation of the device emission spectrum of a
  • Converter material may be of its theoretical
  • Emission spectrum differ, if the primary radiation is not sufficient to excite all excitation states of the converter material.
  • the measured emission spectrum is thus
  • At least 60% or at least 65% or at least 70% or at least 75% or at least 80% or at least 85% or at least 90% or at least 95% or at least 99% of all particles of the first converter material have a geometric
  • the stated percentages of all particles of the first converter material have a geometrical equivalent diameter of at least 20 nm or at least 50 nm or at least 100 nm or at least 250 nm or at least 500 nm.
  • the remaining particles of the first converter material may have larger geometric equivalent diameters or smaller geometric equivalent diameters.
  • the geometric shapes of particles of a converter material deviate from a spherical shape.
  • the particles have an irregular surface and / or are elongated or edged.
  • the particle has a surface or a volume or a projection surface.
  • This surface or volume or projection surface is set equal to the surface or volume or
  • Projection surface of a sphere The diameter of this sphere is the geometric equivalent diameter.
  • the surface or the volume or the projection surface of the particles can be determined in different ways. For example, light microscopy,
  • sedimentation analytical method Depending on how large the individual particles are, these measuring methods are more or less suitable for determining the surface or the volume or the projection surface of the particles.
  • this includes
  • optoelectronic component an optoelectronic
  • the converter element comprises a plurality of particles of a first Converter material.
  • the first converter material is for
  • Converter material have a geometric
  • the present invention is based inter alia on the finding that optoelectronic components with a
  • Leave converter in plan view of the converter element often a colored visual impression, which can be perceived as disturbing. For example
  • Spectral range is the blue spectral component of the ambient light and convert it into yellow and or green light. Consequently, the converter element appears yellowish to greenish to an observer.
  • the particle sizes of at least one converter material are reduced to such an extent that these particles increasingly scatter ambient light.
  • Ambient light which strikes the converter element is then preferably already scattered before an increased
  • the particles of the first converter material together have a mass fraction of all converter materials used in the component of at least 1% by weight or at least 5% by weight or at least 10% or at least 30% by weight or at least 50% by weight.
  • the intended operation of the device at least 5% or at least 10% or at least 20% or at least 50% of the primary radiation emitted by the semiconductor chip is converted by the particles from the first converter material.
  • this includes
  • Converter element a plurality of particles of a second converter material.
  • the second converter material is set up to convert the primary radiation and has a second emission spectrum.
  • the second converter material may be different from the first converter material.
  • the second converter material is preferably an inorganic converter material.
  • the emission spectrum of the second converter material is preferably partially or predominantly in the visible and / or near infrared spectral range between 350 nm and 3000 nm inclusive or between 350 nm and 800 nm inclusive or between 800 nm and 3000 nm inclusive.
  • the second emission spectrum may be different from the first
  • Emission spectrum be different.
  • the two emission spectra then have a different one
  • the main wavelength of the second converter material is opposite to the main wavelength of the first converter material shifted by at least 20 nm or at least 50 nm or at least 100 nm red.
  • the second converter material may also be present in the form of a ceramic, in particular in the form of a ceramic layer.
  • a converter material is, for example, by a particular chemical formula, such as
  • Converter material has a geometric equivalent diameter of at most 30 ym or at most 25 ym or at most 20 ym or at most 15 ym.
  • at least 80% or at least 85% or at least 90% or at least 95% of all particles from the first converter material are distributed in a first converter layer, in particular distributed homogeneously. That is, the particles from the first
  • Converter material is accumulated or accumulated in a first converter layer.
  • the first converter layer are preferably less than 10% or less than 5% or less than 1% of all particles of the second converter material and / or another converter material arranged.
  • the first converter layer runs, for example, in
  • the first converter layer may be as a separate or
  • prefabricated layer to be applied to the semiconductor chip. It may, however, the intrinsic in the first converter layer, as explained later in the later
  • At least 80% or at least 85% or at least 90% or at least 95% of all particles from the second converter material are distributed in a second converter layer, in particular distributed homogeneously.
  • the particles of the second converter material are thus also accumulated or accumulated in a second converter layer.
  • the second converter layer are
  • the second converter layer preferably runs essentially parallel to the upper side of the semiconductor chip.
  • the second converter layer may be applied to the semiconductor chip as a prefabricated or separate layer. However, the second converter layer can also be produced intrinsically during the production process.
  • the first converter layer has, for example, a thickness, measured perpendicularly to the top side of the semiconductor chip, of at least 5 ⁇ m or at least 10 ⁇ m or at least 20 ⁇ m. Alternatively or additionally, the thickness of the first
  • Converter layer at most 100 ym or at most 80 ym or at most 50 ym.
  • the second converter layer can
  • ⁇ For example, have a thickness between 5 ym and 150 ym inclusive.
  • Converter layer disposed between the first converter layer and the semiconductor chip.
  • the first converter layer and the second converter layer may be separate layers, between which an interface is formed.
  • the interface is
  • the first converter layer with the second converter layer can also be produced in one piece or in one piece.
  • both the first one includes
  • Converter layer and the second converter layer a matrix material into which the particles from the
  • Converter materials are embedded.
  • the matrix material can transition from the first converter layer into the second converter layer without interruption and without any interfaces. That is, in particular the matrix material of the first Converter layer may be formed integrally with the matrix material of the second converter layer.
  • the first converter layer preferably forms a
  • At least 70% or at least 80% or at least 90% of the first is
  • At least 70% or at least 80% or at least 90% of the first is
  • At least 70% or at least 80% or at least 90% of the second is
  • At least 70% or at least 80% or at least 90% of the second is
  • the semiconductor chip is set up so that the spectrum of the primary radiation is at least 70% or at least 80% or at least 90% in a wavelength range between 300 nm and 500 nm inclusive, preferably between 380 nm and 500 nm inclusive ,
  • the semiconductor chip thus preferably emits in the blue spectral range or in the UV range.
  • this includes
  • Converter element a matrix material into which the particles of the first converter material and / or from the second
  • Matrix material the particles of the converter material or the converter materials are preferably deterministic, that is random, distributed.
  • the matrix material may include or consist of, for example, silicone, in particular a clear silicone, or siloxane or glass or resin or epoxide.
  • Converter material by at least 0.5 or at least 0.8 or at least 1.0 or at least 1.5 from the refractive index for visible light of the matrix material. The higher the
  • Refractive index difference between the particles of the first converter material and the matrix material is the stronger is the scattering of light when hitting the particles of the first converter material.
  • the semiconductor chip and the converter element are selected such that the component as a whole emits white light with a color temperature of between 1500 K and 8000 K inclusive.
  • the light emitted by the device has a color location in the CIE standard color chart with the coordinates (0.3 x 0.35, 0.29 ⁇ y ⁇ 0.36).
  • Example are both the particles from the first
  • Converter material homogeneously distributed in the entire converter element.
  • the particles of the first converter material and the particles of the second converter material may, for example, in a common and integrally formed
  • the first one is based
  • Converter material comprises, for example, a rare-earth-doped garnet, such as yttrium aluminum garnet, or YAG for short, or a luthetium aluminumtrium garnet, or LuYAG, for short.
  • the first converter material may be doped with an activator, for
  • the second converter material is based on a nitride or a garnet.
  • the second converter material includes a
  • the alkaline earth metal is, for example, barium or calcium or strontium.
  • the second converter material can be used with a rare one
  • Earth ion such as Eu2 +
  • Converter material is a semiconductor material. The particles from the second converter material are then
  • the flashlight comprises an optoelectronic component described here.
  • the flashlight is therefore a so-called flash LED. All in connection with the optoelectronic device disclosed features are therefore also for the
  • Flash light revealed and vice versa The flash is, for example, set up for taking pictures.
  • the flash is suitable for use in one
  • Digital camera or a mobile phone Digital camera or a mobile phone.
  • the radiation sensor serves in particular for receiving a radiation emitted by the component and reflected at an object.
  • the system is a heart rate monitor.
  • the component then preferably emits radiation in the near infrared range.
  • a method for producing an optoelectronic component is specified.
  • the method is suitable for producing an optoelectronic component described here. All in connection with the optoelectronic device disclosed features are therefore also for the method for producing a
  • the method comprises a step A) in which particles of a first
  • the matrix material are distributed.
  • the matrix material may be a liquefied silicone, in particular
  • Converter material arranged for the conversion of a primary radiation and has a first emission spectrum, which lies at least partially in the visible and / or near infrared spectral range.
  • At least 60% of all particles of the first converter material have one
  • geometric equivalent diameter between 20 nm and 2.2 ym inclusive.
  • the method comprises a step B), in which the mixture of the matrix material and the particles introduced therein from the first
  • Converter material on an upper side of a semiconductor chip is applied.
  • the mixture can be, for example, by potting (volume casting) on the semiconductor chip
  • the mixture is preferably applied directly to the semiconductor chip.
  • the semiconductor chip is formed by applying the mixture, for example, from the mixture, so that the semiconductor chip is embedded in the mixture.
  • the method comprises a step C) in which the mixture of the matrix material and the particles introduced therein from the first
  • Converter material is cured to a converter element. After curing, the converter element during normal operation of the device is preferred
  • the mixture may cure at room temperature.
  • the curing can be accelerated, for example, by heating the mixture to temperatures above room temperature.
  • the method comprises a step AI), which is carried out before step B), and in which particles of a second converter material are introduced into the matrix material.
  • step AI which is carried out before step B
  • particles of a second converter material are introduced into the matrix material.
  • the particles of the second converter material together with the particles of the first converter material in the
  • the second emission spectrum lies at least partially in the
  • At least 60% of all particles of the second converter material have a geometric equivalent diameter of at least 2.2 ym.
  • the larger particles from the second converter material within the liquid or viscous matrix material sink faster than the smaller particles from the first converter material.
  • the longer one delays the curing of the matrix material the stronger the separation of the particles of the first converter material and the second converter material due to the different
  • the sedimentation can be accelerated by various means, for
  • step C) at least 80% of all particles are from the first
  • Distributed converter material in the first converter layer preferably homogeneously distributed.
  • step C) at least 80% of all particles are from the second
  • the mixture of the matrix material and the particles is therefore only cured when such a first
  • Converter layer and have formed such a second converter layer.
  • the second is
  • Converter layer between the first converter layer and the semiconductor chip in particular wipe the first
  • Figures 1 and 2 show two embodiments of a
  • FIGS. 4A and 4B show positions in an exemplary embodiment of a method for producing an optoelectronic component.
  • FIG. 1 shows a first exemplary embodiment of an optoelectronic component 100.
  • Optoelectronic component 100 comprises a carrier 6, for example a ceramic carrier. On an underside of the carrier 6 contact elements 51, 52 are attached. Via the contact elements 51, 52, the optoelectronic component 100 is electrically contacted. In the unassembled state of the optoelectronic component 100, the contact elements 51, 52 are exposed on the underside of the device 100.
  • Device 100 to a surface mountable device.
  • the contact elements 51, 52 are for example over
  • a semiconductor chip for example an AlInGaN-based semiconductor chip,
  • the semiconductor chip 1 may be a so-called flip-chip.
  • the semiconductor chip 1 is electrically conductively connected, for example, to the pads of the carrier 6.
  • the semiconductor chip 1 comprises an upper side 10, which is the
  • Carrier 6 is turned away. Over the top 10 becomes
  • Semiconductor chips 1 at least 30% of the radiation emitted by the semiconductor chip 1 radiation decoupled.
  • the semiconductor chip 1 emits in normal operation, for example, light in the blue spectral range.
  • the semiconductor chip 1 is of a converter element 2
  • the converter element 2 forms in particular a
  • the converter element 2 is in direct contact with the top side 10 of the semiconductor chip 1 and with side surfaces of the semiconductor chip 1.
  • the converter element 2 comprises a matrix material 23 in which particles of a first converter material 21 and of a second converter material 22 are distributed are.
  • Matrix material 23 is, for example, a
  • Silicone in particular a clear silicone.
  • Converter material 21 and the second converter material 22 are here exclusively in the form of particles distributed and embedded in the matrix material 23.
  • Converter material have a geometric
  • the first converter material 21 is, for example, YAG or LuYAG, for example with a cerium doping.
  • the first converter material 21 is configured to emit the blue light of the Semiconductor chips 1 partly to convert yellow and / or green light.
  • the particles of the second converter material 22 are larger than the particles selected from the first converter material 21.
  • at least 80% of all particles of the second converter material 22 have a geometric
  • the particles from the second converter material 22 have less light-scattering effect than the particles from the first converter material 21.
  • the second converter material 22 is based, for example, on a nitride.
  • the second converter material 22 is configured, for example, for the blue light of the semiconductor chip 1 or the yellow or green light of the first
  • Convert converter 21 partly into red and / or orange light.
  • Semiconductor device 100 emerging light is a mixed light emitted from the semiconductor chip 1 blue
  • Mixed radiation can in particular white light with a
  • Color temperature be between 1500 K and 8000 K inclusive.
  • the particles are from the first
  • Particles of the first converter material 21 and the particles of the second converter material 22 is not or only
  • the converter element 2 comprises a first converter layer 210 and a second converter layer 220. At least 80% of all particles from the first converter material 21 and at most 5% of all particles from the second
  • Converter material 22 are arranged in the first converter layer 210. At least 80% of all particles from the second converter material 22 and at most 5% of all particles from the first converter material 21 are in the second
  • Converter layer 220 is arranged.
  • the first converter layer 210 has, for example, a thickness of at least 5 ⁇ m.
  • the second converter layer 220 has, for example, a thickness of between 5 ym and 100 ym inclusive.
  • the second converter layer 220 is arranged between the upper side 10 of the semiconductor chip 1 and the first converter layer 210.
  • Such an arrangement is particularly advantageous for an efficient scattering of ambient light striking the converter element 2.
  • the ambient light predominantly strikes the first converter layer 210 first and can not penetrate deep into the converter element 2 due to the high scattering on the particles from the first converter material 21. Consequently, even little of the ambient light is absorbed and converted by the particles of the first converter material 21 and the particles of the second converter material 22.
  • the converter element 2 appears substantially white to an observer.
  • the scattering power of particles is shown graphically.
  • the y-axis shows the scattering power in free units.
  • the diameter of the particles for example the geometric equivalent diameter, is shown on the x-axis.
  • the solid line stands for the
  • FIG. 4A shows a first position in a method for producing an optoelectronic component. As described in connection with FIGS. 1 and 2, a semiconductor chip 1 is applied to a carrier 6. On the semiconductor chip 1 is a mixture of a matrix material 23 with particles introduced therein from a first
  • the mixture is in a liquid or
  • FIG. 4B shows, for example, the optoelectronic component 100 of FIG. 2.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

Selon au moins un mode de réalisation, l'invention concerne un composant optoélectronique (100) qui comprend une puce semi-conductrice (1) optoélectronique pourvue d'une face supérieure (10) qui émet un rayonnement primaire en fonctionnement normal. Le composant comprend en outre un élément convertisseur (2) sur la face supérieure pour la conversion du rayonnement primaire. L'élément convertisseur comprend une pluralité de particules en un premier matériau (21) convertisseur. Le premier matériau convertisseur sert à la conversion du rayonnement primaire et comporte un premier spectre d'émission qui se trouve au moins partiellement dans la plage spectrale visible et/ou infrarouge proche. Au moins 60 % de toutes les particules provenant du premier matériau convertisseur comportent un diamètre équivalent géométrique compris entre 20 nm et 2,2 µm inclus.
PCT/EP2018/074330 2017-09-13 2018-09-10 Composant optoélectronique et procédé de fabrication d'un composant optoélectronique WO2019052954A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017121185.3 2017-09-13
DE102017121185.3A DE102017121185A1 (de) 2017-09-13 2017-09-13 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements

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Publication Number Publication Date
WO2019052954A1 true WO2019052954A1 (fr) 2019-03-21

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CN110676363A (zh) * 2019-08-22 2020-01-10 有研稀土新材料股份有限公司 一种光学装置

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DE102018119462A1 (de) * 2018-08-09 2020-02-13 Osram Opto Semiconductors Gmbh Sichtbares licht und ir-strahlung emittierendes optoelektronisches bauelement
DE102019125411A1 (de) * 2019-09-20 2021-03-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements

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WO2014023617A1 (fr) * 2012-08-08 2014-02-13 Osram Opto Semiconductors Gmbh Elément semi-conducteur optoélectronique, plaquette de moyen de conversion et procédé de fabrication d'une plaquette de moyen de conversion
WO2014139834A1 (fr) * 2013-03-12 2014-09-18 Osram Opto Semiconductors Gmbh Composant optoélectronique et procédé de fabrication d'un composant optoélectronique
US20170166807A1 (en) * 2015-12-15 2017-06-15 Sharp Kabushiki Kaisha Phosphor containing particle, and light emitting device and phosphor containing sheet using the same
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DE102011079721A1 (de) * 2011-07-25 2013-01-31 Osram Gesellschaft mit beschränkter Haftung Led-lichtquelle
EP2988340B1 (fr) * 2014-08-18 2017-10-11 Seoul Semiconductor Co., Ltd. Conditionnement de diode électroluminescente et procédé de fabrication correspondant

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US20080231170A1 (en) * 2004-01-26 2008-09-25 Fukudome Masato Wavelength Converter, Light-Emitting Device, Method of Producing Wavelength Converter and Method of Producing Light-Emitting Device
WO2014023617A1 (fr) * 2012-08-08 2014-02-13 Osram Opto Semiconductors Gmbh Elément semi-conducteur optoélectronique, plaquette de moyen de conversion et procédé de fabrication d'une plaquette de moyen de conversion
WO2014139834A1 (fr) * 2013-03-12 2014-09-18 Osram Opto Semiconductors Gmbh Composant optoélectronique et procédé de fabrication d'un composant optoélectronique
US20170166807A1 (en) * 2015-12-15 2017-06-15 Sharp Kabushiki Kaisha Phosphor containing particle, and light emitting device and phosphor containing sheet using the same
DE202017001826U1 (de) * 2016-04-06 2017-07-11 Nichia Corporation Lichtemittierendes Bauelement

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110676363A (zh) * 2019-08-22 2020-01-10 有研稀土新材料股份有限公司 一种光学装置

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