WO2019050296A3 - 반도체 발광 소자 및 이의 제조방법 - Google Patents

반도체 발광 소자 및 이의 제조방법 Download PDF

Info

Publication number
WO2019050296A3
WO2019050296A3 PCT/KR2018/010420 KR2018010420W WO2019050296A3 WO 2019050296 A3 WO2019050296 A3 WO 2019050296A3 KR 2018010420 W KR2018010420 W KR 2018010420W WO 2019050296 A3 WO2019050296 A3 WO 2019050296A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
forming
semiconductor
semiconductor layers
layer
Prior art date
Application number
PCT/KR2018/010420
Other languages
English (en)
French (fr)
Other versions
WO2019050296A2 (ko
Inventor
박대석
설대수
Original Assignee
주식회사 세미콘라이트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 세미콘라이트 filed Critical 주식회사 세미콘라이트
Publication of WO2019050296A2 publication Critical patent/WO2019050296A2/ko
Publication of WO2019050296A3 publication Critical patent/WO2019050296A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

본 개시는, 반도체 발광 소자의 제조 방법에 있어서, 제1 도전성을 가지는 제1 반도체층, 전자와 정공의 재결합을 통해 빛을 생성하는 활성층 및 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층이 순차적으로 적층된 복수의 반도체층 사이에 절연 영역을 형성하여 제1 발광영역을 갖는 제1 발광부와 제2 발광영역을 갖는 제2 발광부로 분리하는 단계; 절연 영역 및 제2 반도체층의 적어도 일부분에 빛흡수 방지막을 형성하는 단계; 활성층 및 나머지 제2 반도체층의 일부를 메사 식각하여 빛흡수 방지막을 덮도록 투광성 도전막을 형성하는 단계; 이웃하는 제1 및 제2 발광부들을 전기적을 연결하는 연결 전극을 형성하는 단계; 복수의 반도체층 및 연결전극을 덮도록 반사층을 형성하는 단계; 그리고 반사층 위에 형성되어 복수의 반도체층과 전기적으로 연결되는 전극부를 형성하는 단계;를 포함하는 반도체 발광소자의 제조 방법에 관한 것이다.
PCT/KR2018/010420 2017-09-08 2018-09-06 반도체 발광 소자 및 이의 제조방법 WO2019050296A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020170115097A KR101928307B1 (ko) 2017-09-08 2017-09-08 반도체 발광 소자 및 이의 제조방법
KR10-2017-0115097 2017-09-08

Publications (2)

Publication Number Publication Date
WO2019050296A2 WO2019050296A2 (ko) 2019-03-14
WO2019050296A3 true WO2019050296A3 (ko) 2019-04-25

Family

ID=64671248

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2018/010420 WO2019050296A2 (ko) 2017-09-08 2018-09-06 반도체 발광 소자 및 이의 제조방법

Country Status (2)

Country Link
KR (1) KR101928307B1 (ko)
WO (1) WO2019050296A2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7319551B2 (ja) 2020-03-31 2023-08-02 日亜化学工業株式会社 発光装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090053435A (ko) * 2007-11-23 2009-05-27 삼성전기주식회사 모놀리식 발광다이오드 어레이 및 그 제조방법
KR101211108B1 (ko) * 2011-06-13 2012-12-11 한국광기술원 고전압 구동 발광다이오드 및 그 제조방법
JP2013046050A (ja) * 2011-08-22 2013-03-04 Lg Innotek Co Ltd 発光素子及び発光素子パッケージ
KR20160035102A (ko) * 2014-08-21 2016-03-31 주식회사 세미콘라이트 반도체 발광소자
KR20160126944A (ko) * 2016-10-19 2016-11-02 주식회사 세미콘라이트 반도체 발광소자

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090053435A (ko) * 2007-11-23 2009-05-27 삼성전기주식회사 모놀리식 발광다이오드 어레이 및 그 제조방법
KR101211108B1 (ko) * 2011-06-13 2012-12-11 한국광기술원 고전압 구동 발광다이오드 및 그 제조방법
JP2013046050A (ja) * 2011-08-22 2013-03-04 Lg Innotek Co Ltd 発光素子及び発光素子パッケージ
KR20160035102A (ko) * 2014-08-21 2016-03-31 주식회사 세미콘라이트 반도체 발광소자
KR20160126944A (ko) * 2016-10-19 2016-11-02 주식회사 세미콘라이트 반도체 발광소자

Also Published As

Publication number Publication date
WO2019050296A2 (ko) 2019-03-14
KR101928307B1 (ko) 2018-12-13

Similar Documents

Publication Publication Date Title
KR102098745B1 (ko) 유기발광 디스플레이 장치 및 그 제조방법
EP4235823A3 (en) Compact light emitting diode chip
WO2010036055A3 (ko) 3족 질화물 반도체 발광소자
WO2016064134A3 (en) Light emitting device and method of fabricating the same
WO2011126248A3 (en) Light emitting diode and method of fabricating the same
WO2013039344A3 (ko) 발광 다이오드 및 그것을 제조하는 방법
EP2360744A3 (en) Light emitting diode and method of manufacturing the same
JP2012060115A5 (ko)
WO2010011057A3 (ko) 반도체 발광소자 및 그 제조방법
WO2012044011A3 (en) Wafer level light emitting diode package and method of fabricating the same
EP2503603A3 (en) Light emitting device and method for manufacturing the same
JP2014508426A5 (ko)
EP2355177A3 (en) Light emitting device, method of manufacturing the same
EP2363895A3 (en) Light emitting device, method of manufacturing the same, light emitting device package
WO2012024647A3 (en) Photovoltaic cell on substrate
EP2362455A3 (en) Light emitting device, method of manufacturing the same, light emitting device package, and illumination system
GB201204670D0 (en) Optoelectronic device
EP2262014A3 (en) Light emitting device, light emitting device package and lighting system having the same
CN106062976A (zh) 用于制造半导体器件的方法和半导体器件
EP2355196A3 (en) Light emitting device package, method of manufacturing the same, and lighting system
US9564554B2 (en) Thin-film flip-chip light emitting diode having roughening surface and method for manufacturing the same
MY165848A (en) Parallel stacked symmetrical and differential inductor
WO2019050296A3 (ko) 반도체 발광 소자 및 이의 제조방법
KR20180123375A (ko) 마이크로 발광소자 및 그 제조 방법
WO2010098606A3 (en) Method for fabricating light emitting device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18854488

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18854488

Country of ref document: EP

Kind code of ref document: A2