WO2019043451A1 - Compound usable as n-type semiconductor - Google Patents

Compound usable as n-type semiconductor Download PDF

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WO2019043451A1
WO2019043451A1 PCT/IB2018/000977 IB2018000977W WO2019043451A1 WO 2019043451 A1 WO2019043451 A1 WO 2019043451A1 IB 2018000977 W IB2018000977 W IB 2018000977W WO 2019043451 A1 WO2019043451 A1 WO 2019043451A1
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group
hydrocarbon group
carbon atoms
formula
carbon
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PCT/IB2018/000977
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Japanese (ja)
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WO2019043451A8 (en
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若宮淳志
倉田崇
今西良樹
田中光
萩谷一号
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東洋紡株式会社
国立大学法人京都大学
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D519/00Heterocyclic compounds containing more than one system of two or more relevant hetero rings condensed among themselves or condensed with a common carbocyclic ring system not provided for in groups C07D453/00 or C07D455/00
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Definitions

  • the present invention relates to a compound that can be used as an n-type semiconductor.
  • Organic semiconductor materials are one of the most important materials in the organic electronics field, and can be classified into electron donating p-type semiconductor materials and electron accepting n-type semiconductor materials.
  • Various semiconductor devices can be manufactured by appropriately combining p-type semiconductor materials and n-type semiconductor materials, and such devices are, for example, excitons (excitons formed by recombination of electrons and holes).
  • excitons excitons formed by recombination of electrons and holes.
  • organic thin film solar cells that convert light into electric power
  • organic thin film transistors that control the amount of current and voltage.
  • Patent Document 1 discloses a p-type organic semiconductor in which the following formula (1x) and the following formulas (c1) to (c31) are combined (in addition, the followings such as T 1 , T 2 , B 1 , B 2 etc.
  • the symbols in the formula (1x) and the symbols in the following formulas (c1) to (c31) such as R 30 to R 60 are all based on the definition of Patent Document 1, and the same as in the description of the compounds of the present invention Even when the symbol is used, the meaning of the symbol in the compounds of the present invention follows the contents defined herein).
  • the compound used as the raw material of said Formula (1x) is a compound developed for the first time by the said patent document 1, and it is desirable to raise the versatility and to acquire the merit by a scale-up. For example, if it can be used as a material having characteristics different from those of Patent Document 1, particularly as an n-type semiconductor, it is expected that the versatility of the structure of Formula (1x) will be significantly enhanced.
  • the present invention was made in view of the above circumstances, and an object thereof is to provide a compound suitable for an n-type semiconductor having the above formula (1x) as its partial structure.
  • Another preferred object of the present invention is to provide a compound useful for an n-type semiconductor that expresses a high open circuit voltage (Voc).
  • the present invention which can achieve the above object is as follows. [1] One or more of the first divalent organic group represented by the following formula (1) and the second divalent organic group selected from the following formulas (2a) and (2b) And a compound characterized in that the first divalent organic group and the second divalent organic group are alternately arranged.
  • T 1 and T 2 are each independently An alkoxy group; A thioalkoxy group; A thiophene ring optionally substituted with a hydrocarbon group or an organosilyl group; A thiazole ring optionally substituted with a hydrocarbon group or an organosilyl group; or It represents a phenyl group which may be substituted by a hydrocarbon group, an alkoxy group, a thioalkoxy group, an organosilyl group, a halogen atom or a trifluoromethyl group.
  • B 1 and B 2 each represent a thiophene ring which may be substituted by a hydrocarbon group, a thiazole ring which may be substituted by a hydrocarbon group, or an ethynylene group.
  • R 31 to R 34 each independently represent a hydrogen atom, a hydrocarbon group having 6 to 30 carbon atoms, or * -Si (R 40 ) 3 .
  • R 40 represents an aliphatic hydrocarbon group having 1 to 20 carbon atoms or an aromatic hydrocarbon group having 6 to 10 carbon atoms, and a plurality of R 40 s may be the same or different.
  • each of T 1 and T 2 is a group represented by any one of the following formulas (t1) to (t5).
  • R 13 to R 14 each independently represent a hydrocarbon group having 6 to 30 carbon atoms.
  • R 15a to R 16a each independently represent a hydrocarbon group having 6 to 30 carbon atoms, or * -Si (R 18 ) 3 .
  • R 15b to R 16b independently represents a hydrogen atom, a hydrocarbon group having a carbon number of 6 to 30, or * -Si (R 18 ) 3 .
  • R 17a represents a hydrocarbon group having 6 to 30 carbon atoms, * -O-R 19 , * -S-R 20 , * -Si (R 18 ) 3 , a halogen atom, or * -CF 3 .
  • R 17b represents a hydrogen atom, a hydrocarbon group having 6 to 30 carbon atoms, * -O-R 19 , * -S-R 20 , * -Si (R 18 ) 3 , a halogen atom, or * -CF 3 .
  • R 18 represents an aliphatic hydrocarbon group having 1 to 20 carbon atoms or an aromatic hydrocarbon group having 6 to 10 carbon atoms, and a plurality of R 18 s may be the same or different.
  • R 19 to R 20 each independently represent a hydrocarbon group having 6 to 30 carbon atoms. * Represents a bond.
  • [3] The compound according to [1] or [2], wherein each of B 1 and B 2 is a group represented by any one of the following formulas (b1) to (b3). [In the formulas (b1) to (b3), R 21a , R 21b and R 22 each independently represent a hydrogen atom or a hydrocarbon group having 6 to 30 carbon atoms.
  • the compound of the present invention is suitable for an n-type semiconductor while having the formula (1) as its partial structure, and in particular shows good characteristics in terms of open circuit voltage (Voc).
  • n-Type Semiconductor Compound The compound of the present invention which can be used as an n-type semiconductor is a first divalent organic group represented by the following formula (1) (hereinafter sometimes referred to as “benzobisthiazole type organic group”) And at least one second divalent organic group (hereinafter sometimes referred to as "perylene / naphthalenediimide type organic group”) selected from the following formulas (2a) and (2b), and It is characterized in that the first divalent organic group and the second divalent organic group are alternately arranged.
  • T 1 and T 2 are each independently An alkoxy group; A thioalkoxy group; A thiophene ring optionally substituted with a hydrocarbon group or an organosilyl group; A thiazole ring optionally substituted with a hydrocarbon group or an organosilyl group; or It represents a phenyl group which may be substituted by a hydrocarbon group, an alkoxy group, a thioalkoxy group, an organosilyl group, a halogen atom or a trifluoromethyl group.
  • B 1 and B 2 each represent a thiophene ring which may be substituted by a hydrocarbon group, a thiazole ring which may be substituted by a hydrocarbon group, or an ethynylene group.
  • R 31 to R 34 each independently represent a hydrogen atom, a hydrocarbon group having 6 to 30 carbon atoms, or * -Si (R 40 ) 3 .
  • R 40 represents an aliphatic hydrocarbon group having 1 to 20 carbon atoms or an aromatic hydrocarbon group having 6 to 10 carbon atoms, and a plurality of R 40 s may be the same or different.
  • the organosilyl group means a monovalent group in which one or more hydrocarbon groups are substituted on Si atoms, and the number of hydrocarbon groups substituted on Si atoms is two or more. Is preferable, and three are more preferable.
  • the benzobisthiazole organic group (formula (1)) one type may be used, or two or more types may be used in combination.
  • the perylene / naphthalenediimide type organic groups (formulas (2a) and (2b)) may be used alone or in combination of two or more.
  • the benzobisthiazole type organic group and the perylene / naphthalenediimide type organic group each need to be one or more, and when the benzobisthiazole type organic group is represented by A and the perylene / naphthalenediimide type organic group is represented by B,
  • the weight average molecular weight (in terms of styrene) of the n-type organic semiconductor is, for example, 10,000 or more, preferably 15,000 or more, and more preferably 20,000 or more. Further, the upper limit is not particularly limited, but when it can be measured, it may be, for example, 1,000,000 or less, or 500,000 or less.
  • the energy level of LUMO (lowest unoccupied orbital) of the n-type semiconductor compound is, for example, -3.5 eV or less, preferably -4.0 eV or less, more preferably -4.2 eV or less.
  • the lower limit of LUMO can be set as appropriate, and may be, for example, about -4.5 eV.
  • T 1 and T 2 may be the same or different from each other However, it is preferable that they are the same from the viewpoint of easy production.
  • T 1 and T 2 are preferably groups represented by the following formulas (t1) to (t5).
  • a group represented by the following formula (t1) is preferable, and as the thioalkoxy group, a group represented by the following formula (t2) is preferable, and hydrocarbon As a thiophene ring which may be substituted by a group or an organosilyl group, a group represented by the following formula (t3) is preferable, and as a thiazole ring which may be substituted by a hydrocarbon group or an organosilyl group, a following formula The group represented by t4) is preferable, and a hydrocarbon group, an alkoxy group, a thioalkoxy group, an organosilyl group, a halogen atom, or a phenyl group which may be substituted with a trifluoromethyl group is a group represented by the following formula (t5) The group represented by) is preferable.
  • T 1 and T 2 are groups represented by the following formulas (t1) to (t5), light of
  • R 13 to R 14 each independently represent a hydrocarbon group having 6 to 30 carbon atoms.
  • R 15a to R 16a each independently represent a hydrocarbon group having 6 to 30 carbon atoms, or * -Si (R 18 ) 3 .
  • Each of R 15b to R 16b independently represents a hydrogen atom, a hydrocarbon group having a carbon number of 6 to 30, or * -Si (R 18 ) 3 .
  • R 17a represents a hydrocarbon group having 6 to 30 carbon atoms, * -O-R 19 , * -S-R 20 , * -Si (R 18 ) 3 , a halogen atom, or * -CF 3 .
  • R 17b represents a hydrogen atom, a hydrocarbon group having 6 to 30 carbon atoms, * -O-R 19 , * -S-R 20 , * -Si (R 18 ) 3 , a halogen atom, or * -CF 3 .
  • R 18 represents an aliphatic hydrocarbon group having 1 to 20 carbon atoms or an aromatic hydrocarbon group having 6 to 10 carbon atoms, and a plurality of R 18 s may be the same or different.
  • R 19 to R 20 each independently represent a hydrocarbon group having 6 to 30 carbon atoms. * Represents a bond. ]
  • a hydrocarbon group having a carbon number of 6 to 30 of R 13 , R 14 , R 15a , R 15b , R 16a , R 16b , R 17a , R 17b , R 19 , and R 20 Is preferably a branched hydrocarbon group, more preferably a branched saturated hydrocarbon group.
  • the hydrocarbon group of R 13 , R 14 , R 15a , R 15b , R 16a , R 16b , R 17a , R 17b , R 19 and R 20 has a branch to increase the solubility in an organic solvent
  • the n-type semiconductor compound of the present invention can obtain appropriate crystallinity.
  • the carbon number of the hydrocarbon group of R 13 , R 14 , R 15a , R 15b , R 16a , R 16b , R 17a , R 17b , R 19 and R 20 is preferably 8 to 25, and more preferably Is 8 to 20, and more preferably 8 to 16.
  • R 13, R 14, R 15a , R 15b, R 16a, R 16b, R 17a, the hydrocarbon groups of R 17b, R 19, 6 to 30 carbon atoms represented by R 20 is, for example, n- hexyl Alkyl group having 6 carbon atoms such as a group; alkyl group having 7 carbon atoms such as n-heptyl group; n-octyl group, 1-n-butylbutyl group, 1-n-propylpentyl group, 1-ethylhexyl group, 2- Ethylhexyl group, 3-ethylhexyl group, 4-ethylhexyl group, 1-methylheptyl group, 2-methylheptyl group, 6-methylheptyl group, 2,4,4-trimethylpentyl group, 2,5-dimethylhexyl group, etc.
  • N-nonyl group 1-n-propylhexyl group, 2-n-propylhexyl group, 1-ethylheptyl group, 2-ethylheptyl group, 1-methyl group
  • An alkyl group having 9 carbon atoms such as octyl group, 2-methyloctyl group, 6-methyloctyl group, 2,3,3,4-tetramethylpentyl group, 3,5,5-trimethylhexyl group; n-decyl group 1-n-pentylpentyl group, 1-n-butylhexyl group, 2-n-butylhexyl group, 1-n-propylheptyl group, 1-ethyloctyl group, 2-ethyloctyl group, 1-methylnonyl group, An alkyl group having 10 carbon atoms such as 2-methylnonyl group and 3,7-dimethyloctyl group; n-undecyl group, 1-
  • alkyl group having 8 to 20 carbon atoms is preferably an alkyl group having 8 to 20 carbon atoms, more preferably an alkyl group having 8 to 16 carbon atoms, still more preferably a branched alkyl group having 8 to 16 carbon atoms, and particularly preferably 2-ethylhexyl.
  • the n-type semiconductor compound of the present invention can be used as an organic solvent Solubility is improved and it has appropriate crystallinity.
  • aliphatic carbonization of R 18 The carbon number of the hydrogen group is preferably 1 to 18, and more preferably 1 to 8.
  • Examples of the aliphatic hydrocarbon group of R 18 include a methyl group, an ethyl group, an isopropyl group, a tert-butyl group, an isobutyl group, an octyl group and an octadecyl group.
  • the carbon number of the aromatic hydrocarbon group of R 18 is preferably 6 to 8, more preferably 6 to 7, and particularly preferably 6.
  • the aromatic hydrocarbon group R 18, for example, phenyl group.
  • R 18 an aliphatic hydrocarbon group is preferable, an aliphatic hydrocarbon group having a branch is more preferable, and an isopropyl group is particularly preferable.
  • the plurality of R 18 may be the same or different, but are preferably the same.
  • R 15a , R 15b , R 16a , R 16b , R 17a and R 17b are a group represented by * -Si (R 18 ) 3
  • the n-type semiconductor compound of the present invention has solubility in an organic solvent improves.
  • R 17a and R 17b are halogen atoms
  • any of fluorine, chlorine, bromine and iodine can be used.
  • T 1 and T 2 may be electron donating or may be electron withdrawing.
  • Examples of the electron donating T 1 and T 2 include the above (t 1), (t 2) and (t 3), and among (t 5), the group R 17 a is a hydrocarbon group having 6 to 30 carbon atoms, * —O -R 19, or * also include those which are -S-R 20.
  • Examples of the electron withdrawing T 1 and T 2 include the above (t 4), and among the (t 5), those in which R 17 a is a halogen atom or * -CF 3 are also included.
  • T 1 and T 2 are represented by Formulas (t1), (t3), and (t5) from the viewpoint that the planarity of the entire benzobisthiazole organic group represented by Formula (1) is improved.
  • the group is more preferable, the group represented by the formula (t3) is more preferable, and the groups represented by the following formulas (t3-1) to (t3-16) are particularly preferable.
  • * represents a bond.
  • B 1 and B 2 may be identical to or different from each other, but from the viewpoint of easy production, they are identical. Is preferred.
  • B 1 and B 2 are each preferably a group represented by any one of the following formulas (b1) to (b3).
  • B 1 and B 2 are groups represented by the following formulas (b1) to (b3), the planarity of the obtained n-type semiconductor compound is good, and the photoelectric conversion efficiency can be further improved.
  • R 21a , R 21b and R 22 each independently represent a hydrogen atom or a hydrocarbon group having 6 to 30 carbon atoms.
  • the symbol * represents a bond, and in particular the symbol * on the left represents a bond bonded to the benzene ring of the benzobisthiazole structure.
  • R 21a, R 21b examples of the hydrocarbon group having 6 to 30 carbon atoms
  • the group exemplified as the hydrocarbon group having 6 to 30 carbon atoms can be preferably used.
  • R 21a , R 21b and R 22 each may be a hydrogen atom or a hydrocarbon group, and may have 6 to 30 carbon atoms because solubility and crystallinity are improved and photoelectric conversion efficiency may be further enhanced. Are more preferred.
  • B 1 and B 2 groups represented by formulas (b1) and (b2) are more preferable.
  • B 1 and B 2 groups represented by the formulas (b1) and (b2)
  • interaction between S atoms and N atoms occurs in the benzobisthiazole type organic group (1) to further improve the planarity Do.
  • B 1 and B 2 groups represented by the following formulas (b1-1) to (b3-1) are preferable.
  • * represents a bond, and * on the left side bonds to the benzene ring of benzobisthiazole.
  • Examples of the benzobisthiazole organic group represented by the formula (1) include groups represented by the following formulas (1-1) to (1-48).
  • R 31 and R 32 may be the same as or different from each other, but are preferably the same from the viewpoint of easy production.
  • R 33 and R 34 may be the same as or different from each other, but are preferably the same from the viewpoint of easy production.
  • * -Si (R 40 ) 3 represented by R 31 to R 34 a group exemplified as the above-mentioned * -Si (R 18 ) 3 can be preferably used, and as R 40, it is exemplified as the above R 18 Groups can be preferably used.
  • R 31 to R 34 may be a hydrogen atom or a hydrocarbon group, and have good solubility and crystallinity, and may further enhance the photoelectric conversion efficiency, and thus have a carbon number of 6 to 30. Groups are more preferred.
  • the perylene diimide type organic group (2a) has a total of two bonds on the carbon atom constituting the naphthalene ring which is a partial structure of the perylene diimide, and specifically, the sign is given by the following formula Two of carbon a, carbon b, carbon c, carbon d, carbon e, carbon f, carbon g, and carbon h have a bond.
  • the selection of two carbon atoms having a bond is not particularly limited, and a combination of one selected from carbons a to d and one selected from carbons e to f (a line connecting two nitrogen atoms of the perylene diimide structure A combination having one bond on each side); two selected from carbon a to d or two selected from carbon e to h (two on one side of a line connecting two nitrogen atoms in the perylene diimide structure) And any combination of two bonding hands), but in order to ensure appropriate planarity in the molecule, it is a combination of one selected from carbon a to d and one selected from carbon e to f. Preferably there.
  • the naphthalene diimide type organic group (2b) also has a total of two bonds on the carbon atom constituting the naphthalene ring which is a partial structure of the naphthalene diimide, and specifically, the sign is given by the following formula Two of carbon i, carbon j, carbon k, and carbon L have a bond.
  • the selection of two carbon atoms having a bond is not particularly limited, and a combination of one selected from carbon i and k and one selected from carbon k and L (a line connecting two nitrogen atoms of a naphthalene diimide structure) Combination that will have one bonding hand on both sides); Combination of carbon i and j or combination of carbon k and L (having two bonding hands on one side of a line connecting two nitrogen atoms of a naphthalene diimide structure In order to secure appropriate planarity in the molecule, it is preferable to use a combination of one selected from carbons i and j and one selected from carbons k and L.
  • Such combinations include (i) a combination of carbon i and k or a combination of carbon j and carbon L, (ii) a combination of carbon i and L or a combination of carbon j and carbon k, from the viewpoint of production ii) A combination of carbon i and L or a combination of carbon j and carbon k is preferred.
  • Examples of the perylene diimide type organic group represented by the formula (2a) include groups represented by the following formulas (2a-1) to (2a-8).
  • Examples of the naphthalenediimide organic group represented by the formula (2b) include groups represented by the following formulas (2b-1) to (2b-8).
  • the n-type semiconductor compound is a benzobisthiazole-type raw material represented by the following formula (4) or formula (5), and a perylene / naphthalene diimide-type raw material represented by the following formula (6) or formula (7) And a coupling reaction.
  • T 1, T 2, B 1, B 2 are identical to those in the formula (1).
  • R 1 to R 4 each independently represent an aliphatic hydrocarbon group having 1 to 6 carbon atoms, a hydroxyl group, an alkoxy group having 1 to 6 carbon atoms, or an aryloxy group having 6 to 10 carbon atoms.
  • M 1 and M 2 each independently represent a boron atom or a tin atom.
  • R 1 and R 2 may form a ring with M 1
  • R 3 and R 4 may form a ring with M 2 .
  • m and n each represent an integer of 1 or 2; When m and n are 2, plural R 1 s and R 3 s may be the same or different.
  • R 31 to R 34 are the same as the aforementioned formulas (2a) and (2b).
  • Y 1 to Y 4 each independently represent a halogen atom, preferably a chlorine atom or a bromine atom, and more preferably a bromine atom.
  • Each of —Y 1 and —Y 2 in Formula (6) is bonded to a carbon atom forming a naphthalene ring in Formula (6).
  • Each of —Y 3 and —Y 4 in Formula (7) is bonded to a carbon atom forming a naphthalene ring in Formula (7).
  • B 1, B 2 is a hydrocarbon group A thiophene ring (preferably a group represented by the formula (b1)) which may be substituted by or a thiazole ring optionally substituted by a hydrocarbon group (preferably represented by the formula (b2)
  • a hydrocarbon group preferably represented by the formula (b2)
  • B 1 and B 2 are ethynylene groups (preferably, a group represented by the formula (b3))
  • 3,4,9,10-perylenetetracarboxylic dianhydride represented by the formula (8) or 1,4,5,8-naphthalenetetracarboxylic dianhydride represented by the formula (9) (these are Halogenated (especially brominated) aromatic rings of Tokyo Chemical Industry Co., Ltd., Sigma-Aldrich Co., etc.), and if necessary purification (recrystallization, column chromatography), etc.
  • the corresponding amine compounds (NH 2 -R 31 , NH 2 -R 32 , NH 2 -R 33 , NH 2 -R, etc. are produced after dihalo precursors (8x), (9x) etc.
  • an amine compound (NH 2 -R 31 , NH 2 -R 32 , NH 2 -R 33 , NH 2 -R 34 ) (wherein, R 31 to R) 34 may be produced by treatment with (as described above) to produce diimidized compounds (8y), (9y) and the like, followed by halogenation (especially bromination).
  • -Y 1 to -Y 4 and R 31 to R 34 are as defined above.
  • the molar ratio of the benzobisthiazole type raw material to the perylene / naphthalene diimide type raw material is, for example, in the range of 1:99 to 99: 1, preferably in the range of 20:80 to 80:20, and 40:60. More preferably, it is in the range of ⁇ 60: 40.
  • the compound of the present invention obtained as described above is excellent in acceptor property and is useful as an n-type semiconductor, for example, as an n-type semiconductor material in organic electroluminescence, organic thin film solar cells, organic thin film transistors, etc.
  • the use of is expected.
  • the n-type semiconductor compound of the present invention when used as an acceptor material, it exhibits an open voltage (Voc) equivalent to that of a conventional acceptor material PCBM (C61) (phenyl C61 -butyric acid methyl ester), It shows excellent possibilities.
  • p-type semiconductors examples include poly-3-hexylthiophene (generally called “P3HT”), poly-p-phenylenevinylene, and poly- Alkoxy-p-phenylenevinylene, poly-9,9-dialkylfluorene, poly-p-phenylenevinylene and the like can be mentioned, and a donor-acceptor type semiconductor material is also included.
  • P3HT poly-3-hexylthiophene
  • P3HT poly-p-phenylenevinylene
  • poly- Alkoxy-p-phenylenevinylene poly-9,9-dialkylfluorene
  • poly-p-phenylenevinylene and the like examples of p-type semiconductors (donor materials) to be combined
  • P3HT poly-3-hexylthiophene
  • P3HT poly-p-phenylenevinylene
  • Alkoxy-p-phenylenevinylene poly-9,9-dialkylfluorene
  • a donor-acceptor type semiconductor material for example, Poly ( ⁇ 4,8-bis [(2-ethylhexyl) oxy] benzo [1,2-b: 4,5-b '] dithiophene-2,6-diyl ⁇ ⁇ 3-fluoro-2-[(2- Ethylhexyl) carbonyl] thieno [3,4-b] thiophenediyl ⁇ ) (commonly called PTB7), poly [1- (6- ⁇ 4,8-bis [(2-ethylhexyl) oxy] -6-methylbenzo [1,1] 2-b: 4,5-b ′] dithiophen-2-yl ⁇ ⁇ 3-fluoro-4-methylthieno [3,4-b] thiophen-2-yl ⁇ -1-octanone) (generally called PBDTTT-CF) , Poly [(4,8-di (2-ethylhexyloxy) benzo [1,2-b: 4,5-b '
  • the donor material and the acceptor material (n-type semiconductor) of the present invention become a photovoltaic part of a solar cell by being in contact with each other.
  • the mode of contact can be set as appropriate, and a layer containing a donor material and a layer containing an acceptor material may be stacked, or a mixed layer containing a donor material and an acceptor material may be used.
  • each characteristic of the material obtained by the following example was evaluated as follows. 1) Weight average molecular weight (Mw), number average molecular weight (Mn) The compound to be evaluated is dissolved in a mobile phase solvent (chloroform) to a concentration of 0.5 g / L, gel permeation chromatography (GPC) measurement is performed under the following conditions, and polystyrene is used as a standard sample based on a calibration curve. The number average molecular weight and the weight average molecular weight of the compound to be evaluated were calculated by converting the value. The GPC conditions in the measurement are as follows.
  • UV-visible absorption spectrum A compound to be evaluated is dissolved in chloroform so as to have a concentration of 0.03 g / L, and an ultraviolet-visible spectroscope (manufactured by Shimadzu Corporation, "UV-2450", “UV-3150"), And ultraviolet visible absorption spectrum measurement was performed using the cell of 1 cm of optical path lengths.
  • Ionization potential highest occupied molecular orbital (HOMO) energy level
  • the target compound to be evaluated was deposited on a glass substrate to a thickness of 50 nm to 100 nm. About this film
  • LUMO Lowest unoccupied orbital energy level
  • the LUMO level is determined from the energy gap (HOMO-LUMO) determined by the peak rising wavelength on the long wavelength side of the UV-visible absorption spectrum and the HOMO energy level determined by the ionization potential The
  • Photoelectric conversion characteristic 1 (donor: P3HT) Poly (3-hexylthiophene) (P3HT) was used as a donor material and a compound to be evaluated as an acceptor material, and these were dissolved in chlorobenzene so that the total concentration and donor material: acceptor material ratio in the table below could be obtained.
  • 1, 8- diiodo octane it was made to melt
  • the resulting solution was passed through a 0.45 ⁇ m filter to form a mixed solution.
  • a glass substrate on which ITO was formed was subjected to ozone UV treatment to perform surface treatment, and then PEDOT-PSS (poly (3,4-ethylenedioxythiophene) -poly (styrenesulfonic acid)) was applied by a spin coater. .
  • PEDOT-PSS poly (3,4-ethylenedioxythiophene) -poly (styrenesulfonic acid)
  • a spin coater was applied by a spin coater.
  • a mixed solution of the above donor material and acceptor material was formed into a film by a spin coater and dried (* 1).
  • an ethanol solution about 0.3 v%) of tetraisopropyl orthotitanate was spin-coated to prepare a film converted to titanium oxide by moisture in the atmosphere.
  • aluminum as an electrode was vapor deposited to form a device.
  • Photoelectric conversion characteristic 2 (donor: PTB7) Poly ⁇ 4, 8-bis [(2-ethylhexyl) oxy) benzo [1,2-b: 4,5-b '] dithiophene-2,6-diyl-lt-alt-3-fluoro-2-[( 2-Ethylhexyl) carbonyl] thieno [3,4-b] thiophene-4,6-diyl ⁇ (PTB7) is used as a donor material, and a compound to be evaluated is used as an acceptor material, and the total concentration in the following manner and the donor material are: It was dissolved in chlorobenzene so as to obtain the acceptor material ratio.
  • a mixed solution of the above donor material and acceptor material was formed into a film by a spin coater and heated at 110 ° C. for 15 minutes. Then, an ethanol solution (about 0.3 v%) of tetraisopropyl orthotitanate was spin-coated to prepare a film converted to titanium oxide by moisture in the atmosphere. Thereafter, aluminum as an electrode was vapor deposited to form a device. Jsc (short circuit current density), Voc (open circuit voltage), FF (curve factor), photoelectricity using a solar simulator (CEP 2000, AM 1.5 G filter, radiation intensity 100 mW / cm 2 , spectrometer manufactured) as the obtained device The conversion efficiency ⁇ was determined.
  • the obtained photoelectric conversion device exhibits a high Voc (open circuit voltage), indicating that it can be used as an organic thin film solar cell.
  • the compounds of the present invention can be used as n-type semiconductors.
  • Such compounds include, for example, organic electroluminescence that emits light by the action of excitons (excitons) formed by recombination of electrons and holes, an organic thin film solar cell that converts light into electric power, and the amount of current and voltage. It can be used for controlling organic thin film transistors and the like.

Abstract

A compound characterized by comprising at least one of each of a first divalent organic group represented by formula (1), and a second divalent organic group selected from formula (2a) and formula (2b), wherein the first divalent organic group and the second divalent organic group are aligned in an alternating manner.

Description

n型半導体として使用可能な化合物Compounds that can be used as n-type semiconductors
 本発明はn型半導体として使用可能な化合物に関するものである。 The present invention relates to a compound that can be used as an n-type semiconductor.
 有機半導体材料は、有機エレクトロニクス分野において最も重要な材料の1つであり、電子供与性のp型半導体材料や電子受容性のn型半導体材料に分類することができる。p型半導体材料やn型半導体材料を適切に組合せることにより様々な半導体素子を製造することができ、このような素子は、例えば、電子と正孔が再結合して形成する励起子(エキシトン)の作用により発光する有機エレクトロルミネッセンスや、光を電力に変換する有機薄膜太陽電池、電流量や電圧量を制御する有機薄膜トランジスタに応用されている。 Organic semiconductor materials are one of the most important materials in the organic electronics field, and can be classified into electron donating p-type semiconductor materials and electron accepting n-type semiconductor materials. Various semiconductor devices can be manufactured by appropriately combining p-type semiconductor materials and n-type semiconductor materials, and such devices are, for example, excitons (excitons formed by recombination of electrons and holes). And organic thin film solar cells that convert light into electric power, and organic thin film transistors that control the amount of current and voltage.
 特許文献1には、下記式(1x)と下記式(c1)~(c31)とを組み合わせたp型有機半導体が開示されている(なおT、T、B、B等の下記式(1x)中の記号、及びR30~R60等の下記式(c1)~(c31)中の記号は、いずれも特許文献1の定義に基づいており、本発明の化合物の説明で同じ記号を使用した場合であっても、本発明の化合物での記号の意味は本明細書で定義された内容に従う)。
Figure JPOXMLDOC01-appb-C000004
Figure JPOXMLDOC01-appb-C000005
Patent Document 1 discloses a p-type organic semiconductor in which the following formula (1x) and the following formulas (c1) to (c31) are combined (in addition, the followings such as T 1 , T 2 , B 1 , B 2 etc. The symbols in the formula (1x) and the symbols in the following formulas (c1) to (c31) such as R 30 to R 60 are all based on the definition of Patent Document 1, and the same as in the description of the compounds of the present invention Even when the symbol is used, the meaning of the symbol in the compounds of the present invention follows the contents defined herein).
Figure JPOXMLDOC01-appb-C000004
Figure JPOXMLDOC01-appb-C000005
国際公開第2015/122321号パンフレットInternational Publication No. 2015/122321 brochure
 前記式(1x)の原料となる化合物は、前記特許文献1で初めて開発された化合物であり、その汎用性を高めてスケールアップによるメリットを得ることが望ましい。例えば、前記特許文献1とは異なる特性を有する材料、特にn型半導体として使用できれば、式(1x)の構造の汎用性が著しく高まることが期待される。例えば、有機薄膜太陽電池のアクセプター材料(n型半導体材料)としての応用を考えた場合、短絡電流密度(Jsc)と開放電圧(Voc)、曲線因子(FF)の積「η=開放電圧(Voc)×短絡電流密度(Jsc)×曲線因子(FF)」で算出される光電変換効率ηが高い事が最も望ましく、これを達成するにはまず開放電圧(Voc)に優れた材料開発が望まれる。従来のアクセプター材料としては、PCBM(C61)(フェニルC61−酪酸メチルエステル)が知られており、該PCBM(C61)と同等の開放電圧(Voc)を達成できる事も課題として挙げられる。 The compound used as the raw material of said Formula (1x) is a compound developed for the first time by the said patent document 1, and it is desirable to raise the versatility and to acquire the merit by a scale-up. For example, if it can be used as a material having characteristics different from those of Patent Document 1, particularly as an n-type semiconductor, it is expected that the versatility of the structure of Formula (1x) will be significantly enhanced. For example, when the application as an acceptor material (n-type semiconductor material) of an organic thin film solar cell is considered, the product “η = open circuit voltage (Voc) of short circuit current density (Jsc), open circuit voltage (Voc), curve factor (FF) It is most desirable that the photoelectric conversion efficiency η calculated by: short circuit current density (Jsc) x curve factor (FF) is high, and in order to achieve this, material development with excellent open circuit voltage (Voc) is desired . As a conventional acceptor material, PCBM (C61) (phenyl C61 -butyric acid methyl ester) is known, and it can be mentioned as a problem that an open circuit voltage (Voc) equivalent to that of the PCBM (C61) can be achieved.
 本発明は上記の様な事情に着目してなされたものであって、その目的は、前記式(1x)をその部分構造として有するn型半導体に適した化合物を提供することにある。また本発明の好ましい目的は、高い開放電圧(Voc)を発現するn型半導体に有用な化合物を提供することにある。 The present invention was made in view of the above circumstances, and an object thereof is to provide a compound suitable for an n-type semiconductor having the above formula (1x) as its partial structure. Another preferred object of the present invention is to provide a compound useful for an n-type semiconductor that expresses a high open circuit voltage (Voc).
 上記目的を達成し得た本発明は、以下の通りである。
 [1] 下記式(1)で表される第1の2価の有機基と、下記式(2a)及び式(2b)から選ばれる第2の2価の有機基とをそれぞれ1つ以上有し、かつ第1の2価の有機基と第2の2価の有機基が交互に並ぶことを特徴とする化合物。
Figure JPOXMLDOC01-appb-C000006
[式中、
 T、Tは、それぞれ独立に、
 アルコキシ基;
 チオアルコキシ基;
 炭化水素基もしくはオルガノシリル基で置換されていてもよいチオフェン環;
 炭化水素基もしくはオルガノシリル基で置換されていてもよいチアゾール環;または、
 炭化水素基、アルコキシ基、チオアルコキシ基、オルガノシリル基、ハロゲン原子、もしくはトリフルオロメチル基で置換されていてもよいフェニル基を示す。
 B、Bは、炭化水素基で置換されていてもよいチオフェン環、炭化水素基で置換されていてもよいチアゾール環、または、エチニレン基を示す。
 R31~R34は、それぞれ独立に、水素原子、炭素数6~30の炭化水素基、または*−Si(R40を示す。
 R40は、炭素数1~20の脂肪族炭化水素基、または炭素数6~10の芳香族炭化水素基を示し、複数のR40は、同一でも異なっていてもよい。
 式(2a)及び(2b)中の*−は式(1)の有機基との結合手を表し、その片端は式(2a)又は式(2b)の部分構造であるナフタレン環を形成する炭素原子と結合する。]
 [2] T、Tが、それぞれ、下記式(t1)~(t5)のいずれかで表される基である[1]に記載の化合物。
Figure JPOXMLDOC01-appb-C000007
[式(t1)~(t5)中、
 R13~R14は、それぞれ独立に、炭素数6~30の炭化水素基を示す。
 R15a~R16aは、それぞれ独立に、炭素数6~30の炭化水素基、または*−Si(R18を示す。
 R15b~R16bは、それぞれ独立に、水素原子、炭素数6~30の炭化水素基、または*−Si(R18を示す。
 R17aは、炭素数6~30の炭化水素基、*−O−R19、*−S−R20、*−Si(R18、ハロゲン原子、または*−CFを示す。
 R17bは、水素原子、炭素数6~30の炭化水素基、*−O−R19、*−S−R20、*−Si(R18、ハロゲン原子、または*−CFを示す。
 R18は、炭素数1~20の脂肪族炭化水素基、または炭素数6~10の芳香族炭化水素基を示し、複数のR18は、同一でも異なっていてもよい。
 R19~R20は、それぞれ独立に、炭素数6~30の炭化水素基を示す。
 *は結合手を表す。]
 [3] B、Bが、それぞれ、下記式(b1)~(b3)のいずれかで表される基である[1]または[2]に記載の化合物。
Figure JPOXMLDOC01-appb-C000008
[式(b1)~(b3)中、R21a、R21b、R22は、それぞれ独立に、水素原子または炭素数6~30の炭化水素基を表す。*は結合手を表し、特に左側の*は、ベンゾビスチアゾール構造のベンゼン環に結合する結合手を表すものとする。]
 [4] [1]~[3]のいずれかに記載の化合物を含むn型半導体。
 [5] ドナー材料と、[1]~[3]のいずれかに記載の化合物を含むアクセプター材料とが接触した光発電部を有する太陽電池。
The present invention which can achieve the above object is as follows.
[1] One or more of the first divalent organic group represented by the following formula (1) and the second divalent organic group selected from the following formulas (2a) and (2b) And a compound characterized in that the first divalent organic group and the second divalent organic group are alternately arranged.
Figure JPOXMLDOC01-appb-C000006
[In the formula,
T 1 and T 2 are each independently
An alkoxy group;
A thioalkoxy group;
A thiophene ring optionally substituted with a hydrocarbon group or an organosilyl group;
A thiazole ring optionally substituted with a hydrocarbon group or an organosilyl group; or
It represents a phenyl group which may be substituted by a hydrocarbon group, an alkoxy group, a thioalkoxy group, an organosilyl group, a halogen atom or a trifluoromethyl group.
B 1 and B 2 each represent a thiophene ring which may be substituted by a hydrocarbon group, a thiazole ring which may be substituted by a hydrocarbon group, or an ethynylene group.
R 31 to R 34 each independently represent a hydrogen atom, a hydrocarbon group having 6 to 30 carbon atoms, or * -Si (R 40 ) 3 .
R 40 represents an aliphatic hydrocarbon group having 1 to 20 carbon atoms or an aromatic hydrocarbon group having 6 to 10 carbon atoms, and a plurality of R 40 s may be the same or different.
* In the formulas (2a) and (2b) represents a bond with the organic group of the formula (1), and one end thereof is carbon forming a naphthalene ring which is a partial structure of the formula (2a) or the formula (2b) Bond to an atom. ]
[2] The compound according to [1], wherein each of T 1 and T 2 is a group represented by any one of the following formulas (t1) to (t5).
Figure JPOXMLDOC01-appb-C000007
[In the formulas (t1) to (t5),
R 13 to R 14 each independently represent a hydrocarbon group having 6 to 30 carbon atoms.
R 15a to R 16a each independently represent a hydrocarbon group having 6 to 30 carbon atoms, or * -Si (R 18 ) 3 .
Each of R 15b to R 16b independently represents a hydrogen atom, a hydrocarbon group having a carbon number of 6 to 30, or * -Si (R 18 ) 3 .
R 17a represents a hydrocarbon group having 6 to 30 carbon atoms, * -O-R 19 , * -S-R 20 , * -Si (R 18 ) 3 , a halogen atom, or * -CF 3 .
R 17b represents a hydrogen atom, a hydrocarbon group having 6 to 30 carbon atoms, * -O-R 19 , * -S-R 20 , * -Si (R 18 ) 3 , a halogen atom, or * -CF 3 .
R 18 represents an aliphatic hydrocarbon group having 1 to 20 carbon atoms or an aromatic hydrocarbon group having 6 to 10 carbon atoms, and a plurality of R 18 s may be the same or different.
R 19 to R 20 each independently represent a hydrocarbon group having 6 to 30 carbon atoms.
* Represents a bond. ]
[3] The compound according to [1] or [2], wherein each of B 1 and B 2 is a group represented by any one of the following formulas (b1) to (b3).
Figure JPOXMLDOC01-appb-C000008
[In the formulas (b1) to (b3), R 21a , R 21b and R 22 each independently represent a hydrogen atom or a hydrocarbon group having 6 to 30 carbon atoms. The symbol * represents a bond, and in particular the symbol * on the left represents a bond bonded to the benzene ring of the benzobisthiazole structure. ]
[4] An n-type semiconductor comprising the compound according to any one of [1] to [3].
[5] A solar cell having a photovoltaic part in contact with a donor material and an acceptor material containing a compound according to any one of [1] to [3].
 本発明の化合物は、式(1)をその部分構造として有しつつ、n型半導体に適しており、特に開放電圧(Voc)の点で良好な特性を示す。 The compound of the present invention is suitable for an n-type semiconductor while having the formula (1) as its partial structure, and in particular shows good characteristics in terms of open circuit voltage (Voc).
 1.n型半導体化合物
 n型半導体として使用し得る本発明の化合物は、下記式(1)で表される第1の2価の有機基(以下、「ベンゾビスチアゾール型有機基」という場合がある)と、下記式(2a)及び式(2b)から選ばれる第2の2価の有機基(以下、「ペリレン/ナフタレンジイミド型有機基」という場合がある)とをそれぞれ1つ以上有し、かつ第1の2価の有機基と第2の2価の有機基が交互に並ぶことを特徴とする。
1. n-Type Semiconductor Compound The compound of the present invention which can be used as an n-type semiconductor is a first divalent organic group represented by the following formula (1) (hereinafter sometimes referred to as “benzobisthiazole type organic group”) And at least one second divalent organic group (hereinafter sometimes referred to as "perylene / naphthalenediimide type organic group") selected from the following formulas (2a) and (2b), and It is characterized in that the first divalent organic group and the second divalent organic group are alternately arranged.
Figure JPOXMLDOC01-appb-C000009
Figure JPOXMLDOC01-appb-C000009
[式中、
 T、Tは、それぞれ独立に、
 アルコキシ基;
 チオアルコキシ基;
 炭化水素基もしくはオルガノシリル基で置換されていてもよいチオフェン環;
 炭化水素基もしくはオルガノシリル基で置換されていてもよいチアゾール環;または、
 炭化水素基、アルコキシ基、チオアルコキシ基、オルガノシリル基、ハロゲン原子、もしくはトリフルオロメチル基で置換されていてもよいフェニル基を示す。
 B、Bは、炭化水素基で置換されていてもよいチオフェン環、炭化水素基で置換されていてもよいチアゾール環、または、エチニレン基を示す。
 R31~R34は、それぞれ独立に、水素原子、炭素数6~30の炭化水素基、または*−Si(R40を示す。
 R40は、炭素数1~20の脂肪族炭化水素基、または炭素数6~10の芳香族炭化水素基を示し、複数のR40は、同一でも異なっていてもよい。
 式(2a)及び式(2b)中の*−は式(1)の有機基との結合手を表し、その片端は式(2a)又は式(2b)の部分構造であるナフタレン環を形成する炭素原子と結合する。]
[In the formula,
T 1 and T 2 are each independently
An alkoxy group;
A thioalkoxy group;
A thiophene ring optionally substituted with a hydrocarbon group or an organosilyl group;
A thiazole ring optionally substituted with a hydrocarbon group or an organosilyl group; or
It represents a phenyl group which may be substituted by a hydrocarbon group, an alkoxy group, a thioalkoxy group, an organosilyl group, a halogen atom or a trifluoromethyl group.
B 1 and B 2 each represent a thiophene ring which may be substituted by a hydrocarbon group, a thiazole ring which may be substituted by a hydrocarbon group, or an ethynylene group.
R 31 to R 34 each independently represent a hydrogen atom, a hydrocarbon group having 6 to 30 carbon atoms, or * -Si (R 40 ) 3 .
R 40 represents an aliphatic hydrocarbon group having 1 to 20 carbon atoms or an aromatic hydrocarbon group having 6 to 10 carbon atoms, and a plurality of R 40 s may be the same or different.
In the formulas (2a) and (2b), *-represents a bond with the organic group of the formula (1), and one end thereof forms a naphthalene ring which is a partial structure of the formula (2a) or the formula (2b) Bond to a carbon atom. ]
 なお、本明細書において、オルガノシリル基は、Si原子に1個以上の炭化水素基が置換した1価の基を意味するものとし、Si原子に置換する炭化水素基の数は、2個以上であることが好ましく、3個であることがさらに好ましい。
 ベンゾビスチアゾール型有機基(式(1))は、1種を用いてもよく、2種以上を組み合わせて用いてもよい。またペリレン/ナフタレンジイミド型有機基(式(2a)、(2b))は、1種のみでもよく、2種以上を組み合わせて用いてもよい。
 ベンゾビスチアゾール型有機基とペリレン/ナフタレンジイミド型有機基とは、それぞれ1つ以上あればよく、前記ベンゾビスチアゾール型有機基をA、前記ペリレン/ナフタレンジイミド型有機基をBで表した場合、例えば、A−B、A−B−A、B−A−B、A−B−A−B、A−B−A−B−A、B−A−B−A−B等で表される化合物であってもよく、繰り返し数がさらに多い高分子化合物であってもよい。n型有機半導体の重量平均分子量(スチレン換算)は、例えば、1万以上、好ましくは1.5万以上、より好ましくは2万以上である。また上限は特に限定されないが、測定可能な場合は、例えば、100万以下であってもよく、50万以下であってもよい。
 n型半導体化合物のLUMO(最低空軌道)のエネルギー準位は、例えば、−3.5eV以下、好ましくは−4.0eV以下、より好ましくは−4.2eV以下である。なおLUMOの下限は適宜設定でき、例えば、−4.5eV程度でもよい。
In the present specification, the organosilyl group means a monovalent group in which one or more hydrocarbon groups are substituted on Si atoms, and the number of hydrocarbon groups substituted on Si atoms is two or more. Is preferable, and three are more preferable.
As the benzobisthiazole organic group (formula (1)), one type may be used, or two or more types may be used in combination. The perylene / naphthalenediimide type organic groups (formulas (2a) and (2b)) may be used alone or in combination of two or more.
The benzobisthiazole type organic group and the perylene / naphthalenediimide type organic group each need to be one or more, and when the benzobisthiazole type organic group is represented by A and the perylene / naphthalenediimide type organic group is represented by B, For example, A-B, A-B-A, B-A-B, A-B-A-B, A-B-A-B-A, B-A-B-A-B, etc. It may be a compound, or may be a polymer compound having a larger number of repetitions. The weight average molecular weight (in terms of styrene) of the n-type organic semiconductor is, for example, 10,000 or more, preferably 15,000 or more, and more preferably 20,000 or more. Further, the upper limit is not particularly limited, but when it can be measured, it may be, for example, 1,000,000 or less, or 500,000 or less.
The energy level of LUMO (lowest unoccupied orbital) of the n-type semiconductor compound is, for example, -3.5 eV or less, preferably -4.0 eV or less, more preferably -4.2 eV or less. The lower limit of LUMO can be set as appropriate, and may be, for example, about -4.5 eV.
 1.1 ベンゾビスチアゾール型有機基
 前記n型半導体化合物を構成する式(1)で表されるベンゾビスチアゾール型有機基では、T、Tは互いに同一であっても異なっていてもよいが、製造が容易である観点からは、同一であることが好ましい。
 式(1)で表されるベンゾビスチアゾール構造単位においては、T、Tは、それぞれ、下記式(t1)~(t5)で表される基であることが好ましい。具体的には、T、Tのアルコキシ基としては、下記式(t1)で表される基が好ましく、チオアルコキシ基としては、下記式(t2)で表される基が好ましく、炭化水素基もしくはオルガノシリル基で置換されていてもよいチオフェン環としては下記式(t3)で表される基が好ましく、炭化水素基もしくはオルガノシリル基で置換されていてもよいチアゾール環としては下記式(t4)で表される基が好ましく、炭化水素基、アルコキシ基、チオアルコキシ基、オルガノシリル基、ハロゲン原子、もしくは、トリフルオロメチル基で置換されていてもよいフェニル基としては、下記式(t5)で表される基が好ましい。T、Tが下記式(t1)~(t5)で表される基であると、短波長の光を吸収することができるとともに、高い平面性を有することから効率的にπ−πスタッキングが形成されるため、より一層光電変換効率を高めることができる。
1.1 Benzobisthiazole Type Organic Group In the benzobisthiazole type organic group represented by the formula (1) constituting the n-type semiconductor compound, T 1 and T 2 may be the same or different from each other However, it is preferable that they are the same from the viewpoint of easy production.
In the benzobisthiazole structural unit represented by the formula (1), T 1 and T 2 are preferably groups represented by the following formulas (t1) to (t5). Specifically, as the alkoxy group of T 1 and T 2 , a group represented by the following formula (t1) is preferable, and as the thioalkoxy group, a group represented by the following formula (t2) is preferable, and hydrocarbon As a thiophene ring which may be substituted by a group or an organosilyl group, a group represented by the following formula (t3) is preferable, and as a thiazole ring which may be substituted by a hydrocarbon group or an organosilyl group, a following formula The group represented by t4) is preferable, and a hydrocarbon group, an alkoxy group, a thioalkoxy group, an organosilyl group, a halogen atom, or a phenyl group which may be substituted with a trifluoromethyl group is a group represented by the following formula (t5) The group represented by) is preferable. When T 1 and T 2 are groups represented by the following formulas (t1) to (t5), light of a short wavelength can be absorbed, and since it has high planarity, efficient π-π stacking Therefore, the photoelectric conversion efficiency can be further enhanced.
Figure JPOXMLDOC01-appb-C000010
Figure JPOXMLDOC01-appb-C000010
[式(t1)~(t5)中、
 R13~R14は、それぞれ独立に、炭素数6~30の炭化水素基を示す。
 R15a~R16aは、それぞれ独立に、炭素数6~30の炭化水素基、または*−Si(R18を示す。
 R15b~R16bは、それぞれ独立に、水素原子、炭素数6~30の炭化水素基、または*−Si(R18を示す。
 R17aは、炭素数6~30の炭化水素基、*−O−R19、*−S−R20、*−Si(R18、ハロゲン原子、または*−CFを示す。
 R17bは、水素原子、炭素数6~30の炭化水素基、*−O−R19、*−S−R20、*−Si(R18、ハロゲン原子、または*−CFを示す。
 R18は、炭素数1~20の脂肪族炭化水素基、または炭素数6~10の芳香族炭化水素基を示し、複数のR18は、同一でも異なっていてもよい。
 R19~R20は、それぞれ独立に、炭素数6~30の炭化水素基を示す。
 *は結合手を表す。]
[In the formulas (t1) to (t5),
R 13 to R 14 each independently represent a hydrocarbon group having 6 to 30 carbon atoms.
R 15a to R 16a each independently represent a hydrocarbon group having 6 to 30 carbon atoms, or * -Si (R 18 ) 3 .
Each of R 15b to R 16b independently represents a hydrogen atom, a hydrocarbon group having a carbon number of 6 to 30, or * -Si (R 18 ) 3 .
R 17a represents a hydrocarbon group having 6 to 30 carbon atoms, * -O-R 19 , * -S-R 20 , * -Si (R 18 ) 3 , a halogen atom, or * -CF 3 .
R 17b represents a hydrogen atom, a hydrocarbon group having 6 to 30 carbon atoms, * -O-R 19 , * -S-R 20 , * -Si (R 18 ) 3 , a halogen atom, or * -CF 3 .
R 18 represents an aliphatic hydrocarbon group having 1 to 20 carbon atoms or an aromatic hydrocarbon group having 6 to 10 carbon atoms, and a plurality of R 18 s may be the same or different.
R 19 to R 20 each independently represent a hydrocarbon group having 6 to 30 carbon atoms.
* Represents a bond. ]
 上記式(t1)~(t5)において、R13、R14、R15a、R15b、R16a、R16b、R17a、R17b、R19、R20の炭素数6~30の炭化水素基としては、分岐を有する炭化水素基であることが好ましく、より好ましくは分岐鎖状飽和炭化水素基である。R13、R14、R15a、R15b、R16a、R16b、R17a、R17b、R19、R20の炭化水素基は、分岐を有することにより、有機溶剤への溶解度を上げることができ、本発明のn型半導体化合物は適度な結晶性を得ることができる。R13、R14、R15a、R15b、R16a、R16b、R17a、R17b、R19、R20の炭化水素基の炭素数は、大きいほど有機溶剤への溶解度を向上させることができるが、大きくなり過ぎると、ペリレン/ナフタレンジイミド型有機基をカップリング反応によって結合する時の反応性が低下するため、n型半導体化合物の合成が困難となる。そのため、R13、R14、R15a、R15b、R16a、R16b、R17a、R17b、R19、R20の炭化水素基の炭素数は、好ましくは8~25であり、より好ましくは8~20であり、さらに好ましくは8~16である。 In the above formulas (t1) to (t5), a hydrocarbon group having a carbon number of 6 to 30 of R 13 , R 14 , R 15a , R 15b , R 16a , R 16b , R 17a , R 17b , R 19 , and R 20 Is preferably a branched hydrocarbon group, more preferably a branched saturated hydrocarbon group. The hydrocarbon group of R 13 , R 14 , R 15a , R 15b , R 16a , R 16b , R 17a , R 17b , R 19 and R 20 has a branch to increase the solubility in an organic solvent Thus, the n-type semiconductor compound of the present invention can obtain appropriate crystallinity. The larger the carbon number of the hydrocarbon group of R 13 , R 14 , R 15a , R 15b , R 16a , R 16b , R 17a , R 17b , R 19 and R 20 , the better the solubility in organic solvents can be improved However, if it is too large, the reactivity of the perylene / naphthalenediimide type organic group is reduced by the coupling reaction, which makes it difficult to synthesize an n-type semiconductor compound. Therefore, the carbon number of the hydrocarbon group of R 13 , R 14 , R 15a , R 15b , R 16a , R 16b , R 17a , R 17b , R 19 and R 20 is preferably 8 to 25, and more preferably Is 8 to 20, and more preferably 8 to 16.
 R13、R14、R15a、R15b、R16a、R16b、R17a、R17b、R19、R20で表される炭素数6~30の炭化水素基としては、例えば、n−ヘキシル基等の炭素数6のアルキル基;n−ヘプチル基等の炭素数7のアルキル基;n−オクチル基、1−n−ブチルブチル基、1−n−プロピルペンチル基、1−エチルヘキシル基、2−エチルヘキシル基、3−エチルヘキシル基、4−エチルヘキシル基、1−メチルヘプチル基、2−メチルヘプチル基、6−メチルヘプチル基、2,4,4−トリメチルペンチル基、2,5−ジメチルヘキシル基等の炭素数8のアルキル基;n−ノニル基、1−n−プロピルヘキシル基、2−n−プロピルヘキシル基、1−エチルヘプチル基、2−エチルヘプチル基、1−メチルオクチル基、2−メチルオクチル基、6−メチルオクチル基、2,3,3,4−テトラメチルペンチル基,3,5,5−トリメチルヘキシル基等の炭素数9のアルキル基;n−デシル基、1−n−ペンチルペンチル基、1−n−ブチルヘキシル基、2−n−ブチルヘキシル基、1−n−プロピルヘプチル基、1−エチルオクチル基、2−エチルオクチル基、1−メチルノニル基、2−メチルノニル基、3,7−ジメチルオクチル基等の炭素数10のアルキル基;n−ウンデシル基、1−n−ブチルヘプチル基、2−n−ブチルヘプチル基、1−n−プロピルオクチル基、2−n−プロピルオクチル基、1−エチルノニル基、2−エチルノニル基等の炭素数11のアルキル基;n−ドデシル基、1−n−ペンチルヘプチル基、2−n−ペンチルヘプチル基、1−n−ブチルオクチル基、2−n−ブチルオクチル基、1−n−プロピルノニル基、2−n−プロピルノニル基等の炭素数12のアルキル基;n−トリデシル基、1−n−ペンチルオクチル基、2−n−ペンチルオクチル基、1−n−ブチルノニル基、2−n−ブチルノニル基、1−メチルドデシル基、2−メチルドデシル基等の炭素数13のアルキル基;n−テトラデシル基、1−n−ヘプチルヘプチル基、1−n−ヘキシルオクチル基、2−n−ヘキシルオクチル基、1−n−ペンチルノニル基、2−n−ペンチルノニル基等の炭素数14のアルキル基;n−ペンタデシル基、1−n−ヘプチルオクチル基、1−n−ヘキシルノニル基、2−n−ヘキシルノニル基等の炭素数15のアルキル基;n−ヘキサデシル基、2−n−ヘキシルデシル基、1−n−オクチルオクチル基、1−n−ヘプチルノニル基、2−n−ヘプチルノニル基等の炭素数16のアルキル基;n−ヘプタデシル基、1−n−オクチルノニル基等の炭素数17のアルキル基;n−オクタデシル基、1−n−ノニルノニル基等の炭素数18のアルキル基;n−ノナデシル基等の炭素数19のアルキル基;n−エイコシル基、2−n−オクチルドデシル基等の炭素数20のアルキル基;n−ヘンエイコシル基等の炭素数21のアルキル基;n−ドコシル基等の炭素数22のアルキル基;n−トリコシル基等の炭素数23のアルキル基;n−テトラコシル基、2−n−デシルテトラデシル基等の炭素数24のアルキル基;等が挙げられる。好ましくは炭素数8~20のアルキル基であり、より好ましくは炭素数8~16のアルキル基であり、さらに好ましくは炭素数8~16の分岐鎖状アルキル基であり、特に好ましくは2−エチルヘキシル基、3,7−ジメチルオクチル基、、2−n−ブチルオクチル基、2−n−ヘキシルデシル基、2−n−オクチルドデシル基、2−n−デシルテトラデシル基である。R13、R14、R15a、R15b、R16a、R16b、R17a、R17b、R19、R20が上記の基であると、本発明のn型半導体化合物は、有機溶剤への溶解度が向上し、適度な結晶性を有する。 R 13, R 14, R 15a , R 15b, R 16a, R 16b, R 17a, the hydrocarbon groups of R 17b, R 19, 6 to 30 carbon atoms represented by R 20 is, for example, n- hexyl Alkyl group having 6 carbon atoms such as a group; alkyl group having 7 carbon atoms such as n-heptyl group; n-octyl group, 1-n-butylbutyl group, 1-n-propylpentyl group, 1-ethylhexyl group, 2- Ethylhexyl group, 3-ethylhexyl group, 4-ethylhexyl group, 1-methylheptyl group, 2-methylheptyl group, 6-methylheptyl group, 2,4,4-trimethylpentyl group, 2,5-dimethylhexyl group, etc. N-nonyl group, 1-n-propylhexyl group, 2-n-propylhexyl group, 1-ethylheptyl group, 2-ethylheptyl group, 1-methyl group An alkyl group having 9 carbon atoms, such as octyl group, 2-methyloctyl group, 6-methyloctyl group, 2,3,3,4-tetramethylpentyl group, 3,5,5-trimethylhexyl group; n-decyl group 1-n-pentylpentyl group, 1-n-butylhexyl group, 2-n-butylhexyl group, 1-n-propylheptyl group, 1-ethyloctyl group, 2-ethyloctyl group, 1-methylnonyl group, An alkyl group having 10 carbon atoms such as 2-methylnonyl group and 3,7-dimethyloctyl group; n-undecyl group, 1-n-butylheptyl group, 2-n-butylheptyl group, 1-n-propyloctyl group, An alkyl group having 11 carbon atoms such as 2-n-propyl octyl group, 1-ethyl nonyl group, 2-ethyl nonyl group; n-dodecyl group, 1-n-pentyl heptyl group, 2-n-pentyl group An alkyl group having 12 carbon atoms such as heptyl group, 1-n-butyl octyl group, 2-n-butyl octyl group, 1-n-propyl nonyl group, 2-n-propyl nonyl group; n-tridecyl group, 1- an alkyl group having 13 carbon atoms, such as n-pentyloctyl group, 2-n-pentyloctyl group, 1-n-butyl nonyl group, 2-n-butyl nonyl group, 1-methyldodecyl group, 2-methyldodecyl group; n- Alkyl group having 14 carbon atoms, such as tetradecyl group, 1-n-heptylheptyl group, 1-n-hexyl octyl group, 2-n-hexyl octyl group, 1-n-pentyl nonyl group, 2-n-pentyl nonyl group An alkyl group having 15 carbon atoms such as n-pentadecyl group, 1-n-heptyloctyl group, 1-n-hexylnonyl group, 2-n-hexylnonyl group; n-hexadecyl group; 2- An alkyl group having 16 carbon atoms such as -hexyldecyl group, 1-n-octyloctyl group, 1-n-heptylnonyl group, 2-n-heptylnonyl group; carbon such as n-heptadecyl group or 1-n-octylnonyl group An alkyl group having a carbon number of 18 such as n-octadecyl group, 1-n-nonyl nonyl group; an alkyl group having 19 carbon atoms such as n-nonadecyl group; n-eikosyl group, 2-n-octyldodecyl group An alkyl group having 20 carbon atoms such as a group; an alkyl group having 21 carbon atoms such as an n-heneicosyl group; an alkyl group having 22 carbon atoms such as an n-docosyl group; an alkyl group having 23 carbon atoms such as an n-tricosyl group; -C24 alkyl groups such as tetracosyl group, 2-n-decyl tetradecyl group and the like; and the like. It is preferably an alkyl group having 8 to 20 carbon atoms, more preferably an alkyl group having 8 to 16 carbon atoms, still more preferably a branched alkyl group having 8 to 16 carbon atoms, and particularly preferably 2-ethylhexyl. Group, 3,7-dimethyloctyl group, 2-n-butyloctyl group, 2-n-hexyldecyl group, 2-n-octyldodecyl group, 2-n-decyltetradecyl group. When R 13 , R 14 , R 15a , R 15b , R 16a , R 16b , R 17a , R 17b , R 19 and R 20 are the groups described above, the n-type semiconductor compound of the present invention can be used as an organic solvent Solubility is improved and it has appropriate crystallinity.
 上記式(t1)~(t5)中、R15a、R15b、R16a、R16b、R17a、R17bの*−Si(R18で表される基において、R18の脂肪族炭化水素基の炭素数は、好ましくは1~18であり、より好ましくは1~8である。R18の脂肪族炭化水素基としては、メチル基、エチル基、イソプロピル基、tert−ブチル基、イソブチル基、オクチル基、オクタデシル基が挙げられる。R18の芳香族炭化水素基の炭素数は、好ましくは6~8であり、より好ましくは6~7であり、特に好ましくは6である。R18の芳香族炭化水素基としては、例えば、フェニル基が挙げられる。中でも、R18としては、脂肪族炭化水素基が好ましく、分岐を有する脂肪族炭化水素基がより好ましく、イソプロピル基が特に好ましい。複数のR18は、同一でも異なっていてもよいが、同一であることが好ましい。R15a、R15b、R16a、R16b、R17a、R17bが*−Si(R18で表される基であると、本発明のn型半導体化合物は、有機溶剤への溶解度が向上する。 In the groups represented by R 15a , R 15b , R 16a , R 16b , R 17a and R 17b in * -Si (R 18 ) 3 in the above formulas (t1) to (t5), aliphatic carbonization of R 18 The carbon number of the hydrogen group is preferably 1 to 18, and more preferably 1 to 8. Examples of the aliphatic hydrocarbon group of R 18 include a methyl group, an ethyl group, an isopropyl group, a tert-butyl group, an isobutyl group, an octyl group and an octadecyl group. The carbon number of the aromatic hydrocarbon group of R 18 is preferably 6 to 8, more preferably 6 to 7, and particularly preferably 6. The aromatic hydrocarbon group R 18, for example, phenyl group. Among them, as R 18 , an aliphatic hydrocarbon group is preferable, an aliphatic hydrocarbon group having a branch is more preferable, and an isopropyl group is particularly preferable. The plurality of R 18 may be the same or different, but are preferably the same. When R 15a , R 15b , R 16a , R 16b , R 17a and R 17b are a group represented by * -Si (R 18 ) 3 , the n-type semiconductor compound of the present invention has solubility in an organic solvent improves.
 上記式(t1)~(t5)中、R15a、R15b、R16a、R16b、R17a、R17bの*−Si(R18で表される基としては、具体的には、トリメチルシリル基、エチルジメチルシリル基、イソプロピルジメチルシリル基、トリイソプロピルシリル基、tert−ブチルジメチルシリル基、トリエチルシリル基、トリイソブチルシリル基、トリプロピルシリル基、トリブチルシリル基、ジメチルフェニルシリル基、メチルジフェニルシリル基等のアルキルシリル基;トリフェニルシリル基、tert−ブチルジフェニルシリル基等のアリールシリル基;等が挙げられる。中でも、アルキルシリル基が好ましく、トリメチルシリル基、トリイソプロピルシリル基が特に好ましい。 Specific examples of the group represented by * -Si (R 18 ) 3 of R 15 a , R 15 b , R 16 a , R 16 b , R 17 a and R 17 b in the above formulas (t1) to (t5) include Trimethylsilyl, ethyldimethylsilyl, isopropyldimethylsilyl, triisopropylsilyl, tert-butyldimethylsilyl, triethylsilyl, triisobutylsilyl, tripropylsilyl, tributylsilyl, dimethylphenylsilyl, methyl diphenyl And alkylsilyl groups such as silyl group; arylsilyl groups such as triphenylsilyl group and tert-butyldiphenylsilyl group; and the like. Among them, an alkylsilyl group is preferable, and a trimethylsilyl group and a triisopropylsilyl group are particularly preferable.
 上記式(t5)中、R17a、R17bがハロゲン原子である場合、フッ素、塩素、臭素、ヨウ素のいずれも用いることができる。 In the above formula (t5), when R 17a and R 17b are halogen atoms, any of fluorine, chlorine, bromine and iodine can be used.
 T、Tは、電子供与性であってもよく、電子吸引性であってもよい。
 電子供与性のT、Tとしては、前記(t1)、(t2)、(t3)が挙げられ、(t5)のうち基R17aが炭素数6~30の炭化水素基、*−O−R19、又は*−S−R20であるものも含まれる。電子吸引性のT、Tとしては、前記(t4)が挙げられ、(t5)のうちR17aがハロゲン原子、または*−CFであるものも含まれる。
T 1 and T 2 may be electron donating or may be electron withdrawing.
Examples of the electron donating T 1 and T 2 include the above (t 1), (t 2) and (t 3), and among (t 5), the group R 17 a is a hydrocarbon group having 6 to 30 carbon atoms, * —O -R 19, or * also include those which are -S-R 20. Examples of the electron withdrawing T 1 and T 2 include the above (t 4), and among the (t 5), those in which R 17 a is a halogen atom or * -CF 3 are also included.
 T、Tとしては、式(1)で表されるベンゾビスチアゾール型有機基の全体として平面性が良好になる観点から、式(t1)、(t3)、(t5)で表される基がより好ましく、式(t3)で表される基がさらに好ましく、下記式(t3−1)~(t3−16)で表される基が特に好ましい。式中、*は結合手を表す。 T 1 and T 2 are represented by Formulas (t1), (t3), and (t5) from the viewpoint that the planarity of the entire benzobisthiazole organic group represented by Formula (1) is improved. The group is more preferable, the group represented by the formula (t3) is more preferable, and the groups represented by the following formulas (t3-1) to (t3-16) are particularly preferable. In the formula, * represents a bond.
Figure JPOXMLDOC01-appb-C000011
Figure JPOXMLDOC01-appb-C000011
Figure JPOXMLDOC01-appb-C000012
Figure JPOXMLDOC01-appb-C000012
 また、式(1)で表されるベンゾビスチアゾール型有機基では、B、Bは互いに同一であってもよいし、異なっていてもよいが、製造が容易である観点からは、同一であることが好ましい。式(1)で表される構造単位においては、B、Bが、それぞれ、下記式(b1)~(b3)のいずれかで表される基であることが好ましい。B、Bが下記式(b1)~(b3)で表される基であると、得られるn型半導体化合物の平面性が良好であり、光電変換効率をより一層向上することができる。 In the benzobisthiazole organic group represented by the formula (1), B 1 and B 2 may be identical to or different from each other, but from the viewpoint of easy production, they are identical. Is preferred. In the structural unit represented by the formula (1), B 1 and B 2 are each preferably a group represented by any one of the following formulas (b1) to (b3). When B 1 and B 2 are groups represented by the following formulas (b1) to (b3), the planarity of the obtained n-type semiconductor compound is good, and the photoelectric conversion efficiency can be further improved.
Figure JPOXMLDOC01-appb-C000013
Figure JPOXMLDOC01-appb-C000013
[式(b1)~(b3)中、R21a、R21b、R22は、それぞれ独立に、水素原子または炭素数6~30の炭化水素基を表す。*は結合手を表し、特に左側の*は、ベンゾビスチアゾール構造のベンゼン環に結合する結合手を表すものとする。] [In the formulas (b1) to (b3), R 21a , R 21b and R 22 each independently represent a hydrogen atom or a hydrocarbon group having 6 to 30 carbon atoms. The symbol * represents a bond, and in particular the symbol * on the left represents a bond bonded to the benzene ring of the benzobisthiazole structure. ]
 R21a、R21b、R22の炭素数6~30の炭化水素基としては、R13、R14、R15a、R15b、R16a、R16b、R17a、R17b、R19、R20の炭素数6~30の炭化水素基として例示した基を好ましく用いることができる。
 R21a、R21b、R22は水素原子でも炭化水素基でもよく、溶解性や結晶性が良好となること、および、より一層光電変換効率を高められる可能性があることから炭素数6~30の炭化水素基がより好ましい。
R 21a, R 21b, examples of the hydrocarbon group having 6 to 30 carbon atoms R 22, R 13, R 14 , R 15a, R 15b, R 16a, R 16b, R 17a, R 17b, R 19, R 20 The group exemplified as the hydrocarbon group having 6 to 30 carbon atoms can be preferably used.
R 21a , R 21b and R 22 each may be a hydrogen atom or a hydrocarbon group, and may have 6 to 30 carbon atoms because solubility and crystallinity are improved and photoelectric conversion efficiency may be further enhanced. Are more preferred.
 また、式(1)で表されるベンゾビスチアゾール型有機基では、式(1)で表される有機基全体として平面性に優れるとともに、得られるn型半導体化合物全体としても平面性に優れる観点から、B、Bとしては、式(b1)、(b2)で表される基がより好ましい。B、Bが式(b1)、(b2)で表される基であると、ベンゾビスチアゾール型有機基(1)中でS原子とN原子の相互作用が生じ、平面性がさらに向上する。B、Bとしては、具体的には、下記式(b1−1)~(b3−1)で表される基が好ましい。ただし、式中、*は結合手を表し、左側の*がベンゾビスチアゾールのベンゼン環に結合するものとする。 Moreover, in the benzobisthiazole type organic group represented by Formula (1), while it is excellent in planarity as the whole organic group represented by Formula (1), it is a viewpoint which is excellent in planarity also as the whole n-type semiconductor compound obtained. From these, as B 1 and B 2 , groups represented by formulas (b1) and (b2) are more preferable. When B 1 and B 2 are groups represented by the formulas (b1) and (b2), interaction between S atoms and N atoms occurs in the benzobisthiazole type organic group (1) to further improve the planarity Do. Specifically as B 1 and B 2 , groups represented by the following formulas (b1-1) to (b3-1) are preferable. However, in the formula, * represents a bond, and * on the left side bonds to the benzene ring of benzobisthiazole.
Figure JPOXMLDOC01-appb-C000014
Figure JPOXMLDOC01-appb-C000014
 式(1)で表されるベンゾビスチアゾール型有機基としては、例えば、下記式(1−1)~(1−48)で表される基が挙げられる。 Examples of the benzobisthiazole organic group represented by the formula (1) include groups represented by the following formulas (1-1) to (1-48).
Figure JPOXMLDOC01-appb-C000015
Figure JPOXMLDOC01-appb-C000015
Figure JPOXMLDOC01-appb-C000016
Figure JPOXMLDOC01-appb-C000016
Figure JPOXMLDOC01-appb-C000017
Figure JPOXMLDOC01-appb-C000017
Figure JPOXMLDOC01-appb-C000018
Figure JPOXMLDOC01-appb-C000018
Figure JPOXMLDOC01-appb-C000019
Figure JPOXMLDOC01-appb-C000019
Figure JPOXMLDOC01-appb-C000020
Figure JPOXMLDOC01-appb-C000020
 1.2 ペリレン/ナフタレンジイミド型有機基
 前記ベンゾビスチアゾール型有機基(式(1))は、ペリレン/ナフタレンジイミド型有機基(式(2a)、(2b))と交互に並ぶことで、n型半導体化合物を構成し得る。
 式(2a)、(2b)中、R31~R34で示される炭素数6~30の炭化水素基としては、R13、R14、R15a、R15b、R16a、R16b、R17a、R17b、R19、R20の炭素数6~30の炭化水素基として例示した基を好ましく用いることができる。R31及びR32は互いに同一であってもよいし、異なっていてもよいが、製造が容易である観点から、同一であることが好ましい。R33及びR34は互いに同一であってもよいし、異なっていてもよいが、製造が容易である観点から、同一であることが好ましい。
 R31~R34で示される*−Si(R40としては、前記*−Si(R18として例示した基を好ましく用いることができ、R40としては、前記R18として例示した基を好ましく用いることができる。
 R31~R34は水素原子でも炭化水素基でもよく、溶解性や結晶性が良好となること、および、より一層光電変換効率を高められる可能性があることから炭素数6~30の炭化水素基がより好ましい。
1.2 Perylene / Naphthalenediimide Type Organic Group The above benzobisthiazole type organic group (formula (1)) is alternately arranged with perylene / naphthalene diimide type organic groups (formula (2a), (2b)) to obtain n Type semiconductor compounds.
In the formulas (2a) and (2b), examples of the hydrocarbon group having 6 to 30 carbon atoms represented by R 31 to R 34 include R 13 , R 14 , R 15a , R 15b , R 16a , R 16b and R 17a And groups exemplified as hydrocarbon groups of 6 to 30 carbon atoms, R 17b , R 19 and R 20 can be preferably used. R 31 and R 32 may be the same as or different from each other, but are preferably the same from the viewpoint of easy production. R 33 and R 34 may be the same as or different from each other, but are preferably the same from the viewpoint of easy production.
As * -Si (R 40 ) 3 represented by R 31 to R 34 , a group exemplified as the above-mentioned * -Si (R 18 ) 3 can be preferably used, and as R 40, it is exemplified as the above R 18 Groups can be preferably used.
R 31 to R 34 may be a hydrogen atom or a hydrocarbon group, and have good solubility and crystallinity, and may further enhance the photoelectric conversion efficiency, and thus have a carbon number of 6 to 30. Groups are more preferred.
 ペリレンジイミド型有機基(2a)は、該ペリレンジイミドの部分構造であるナフタレン環を構成する炭素原子上に合計で2つの結合手を有しており、具体的には下記式で符号を付した炭素a、炭素b、炭素c、炭素d、炭素e、炭素f、炭素g、及び炭素hのうち2つが結合手を有する。結合手を有する2つの炭素原子の選択は特に限定されず、炭素a~dから選ばれる1つと、炭素e~fから選ばれる1つとの組み合わせ(ペリレンジイミド構造の2つの窒素原子を結ぶ線の両側に1つずつ結合手を有することになる組み合わせ);炭素a~dから選ばれる2つ又は炭素e~hから選ばれる2つ(ペリレンジイミド構造の2つの窒素原子を結ぶ線の片側に2つの結合手を有することになる組み合わせ)のいずれでもよいが、分子中に適度な平面性を確保するため、炭素a~dから選ばれる1つと、炭素e~fから選ばれる1つとの組み合わせであるのが好ましい。中でも炭素a及びbから選ばれる1つと炭素g及びhから選ばれる1つとの組み(又は炭素c及びdから選ばれる1つと炭素e及びfから選ばれる1つとの組み)などの様に、2つの結合手が異なるナフタレン環に存在するものが好ましく、こうした組み合わせには、(i)炭素c、fの組み、炭素b、gの組み、(ii)炭素c、eの組み、炭素b、hの組み、炭素a、gの組み、炭素d、fの組み、(iii)炭素a,hの組み、炭素d、eの組みなどが含まれ、製造の観点から、(i)炭素c、fの組み、炭素b、gの組みが特に好ましい。
Figure JPOXMLDOC01-appb-C000021
The perylene diimide type organic group (2a) has a total of two bonds on the carbon atom constituting the naphthalene ring which is a partial structure of the perylene diimide, and specifically, the sign is given by the following formula Two of carbon a, carbon b, carbon c, carbon d, carbon e, carbon f, carbon g, and carbon h have a bond. The selection of two carbon atoms having a bond is not particularly limited, and a combination of one selected from carbons a to d and one selected from carbons e to f (a line connecting two nitrogen atoms of the perylene diimide structure A combination having one bond on each side); two selected from carbon a to d or two selected from carbon e to h (two on one side of a line connecting two nitrogen atoms in the perylene diimide structure) And any combination of two bonding hands), but in order to ensure appropriate planarity in the molecule, it is a combination of one selected from carbon a to d and one selected from carbon e to f. Preferably there. Such as a combination of one selected from carbon a and b with one selected from carbon g and h (or a combination of one selected from carbon c and d and one selected from carbon e and f) It is preferable that two bonds are present in different naphthalene rings, and such combinations include (i) a combination of carbon c and f, a combination of carbon b and g, (ii) a combination of carbon c and e, carbon b and h , A pair of carbon a and g, a pair of carbon d and f, (iii) a pair of carbon a and h, a pair of carbon d and e, etc., and from the viewpoint of production, (i) carbon c and f A combination of carbon b and g is particularly preferred.
Figure JPOXMLDOC01-appb-C000021
 ナフタレンジイミド型有機基(2b)も、該ナフタレンジイミドの部分構造であるナフタレン環を構成する炭素原子上に合計で2つの結合手を有しており、具体的には下記式で符号を付した炭素i、炭素j、炭素k、及び炭素Lのうち2つが結合手を有する。結合手を有する2つの炭素原子の選択は特に限定されず、炭素i及びkから選ばれる1つと、炭素k及びLから選ばれる1つとの組み合わせ(ナフタレンジイミド構造の2つの窒素原子を結ぶ線の両側に1つずつ結合手を有することになる組み合わせ);炭素iとjの組み合わせ又は炭素kとLの組み合わせ(ナフタレンジイミド構造の2つの窒素原子を結ぶ線の片側に2つの結合手を有することになる組み合わせ)のいずれでもよいが、分子中に適度な平面性を確保するため、炭素i及びjから選ばれる1つと、炭素k及びLから選ばれる1つとの組み合わせであるのが好ましい。こうした組み合わせには、(i)炭素iとkの組み合わせ又は炭素jと炭素Lの組み合わせ、(ii)炭素iとLの組み合わせ又は炭素jと炭素kの組み合わせが挙げられ、製造の観点から、(ii)炭素iとLの組み合わせ又は炭素jと炭素kの組み合わせが好ましい。
Figure JPOXMLDOC01-appb-C000022
The naphthalene diimide type organic group (2b) also has a total of two bonds on the carbon atom constituting the naphthalene ring which is a partial structure of the naphthalene diimide, and specifically, the sign is given by the following formula Two of carbon i, carbon j, carbon k, and carbon L have a bond. The selection of two carbon atoms having a bond is not particularly limited, and a combination of one selected from carbon i and k and one selected from carbon k and L (a line connecting two nitrogen atoms of a naphthalene diimide structure) Combination that will have one bonding hand on both sides); Combination of carbon i and j or combination of carbon k and L (having two bonding hands on one side of a line connecting two nitrogen atoms of a naphthalene diimide structure In order to secure appropriate planarity in the molecule, it is preferable to use a combination of one selected from carbons i and j and one selected from carbons k and L. Such combinations include (i) a combination of carbon i and k or a combination of carbon j and carbon L, (ii) a combination of carbon i and L or a combination of carbon j and carbon k, from the viewpoint of production ii) A combination of carbon i and L or a combination of carbon j and carbon k is preferred.
Figure JPOXMLDOC01-appb-C000022
 式(2a)で表されるペリレンジイミド型有機基としては、例えば、下記式(2a−1)~(2a−8)で表される基が挙げられる。 Examples of the perylene diimide type organic group represented by the formula (2a) include groups represented by the following formulas (2a-1) to (2a-8).
Figure JPOXMLDOC01-appb-C000023
Figure JPOXMLDOC01-appb-C000023
 式(2b)で表されるナフタレンジイミド型有機基としては、例えば、下記式(2b−1)~(2b−8)で表される基が挙げられる。 Examples of the naphthalenediimide organic group represented by the formula (2b) include groups represented by the following formulas (2b-1) to (2b-8).
Figure JPOXMLDOC01-appb-C000024
Figure JPOXMLDOC01-appb-C000024
2.製造方法
 前記n型半導体化合物は、下記式(4)又は式(5)で表されるベンゾビスチアゾール型原料と、下記式(6)又は式(7)で表されるペリレン/ナフタレンジイミド型原料とをカップリング反応させる事によって製造できる。
2. Production Method The n-type semiconductor compound is a benzobisthiazole-type raw material represented by the following formula (4) or formula (5), and a perylene / naphthalene diimide-type raw material represented by the following formula (6) or formula (7) And a coupling reaction.
Figure JPOXMLDOC01-appb-C000025
Figure JPOXMLDOC01-appb-C000025
[式中、T、T、B、Bは、前記式(1)と同じである。R~Rは、それぞれ独立に、炭素数1~6の脂肪族炭化水素基、水酸基、炭素数1~6のアルコキシ基、または、炭素数6~10のアリールオキシ基を表す。M、Mは、それぞれ独立に、ホウ素原子または錫原子を表す。R、Rは、Mとともに環を形成していてもよく、R、Rは、Mとともに環を形成していてもよい。m、nは、それぞれ、1または2の整数を表す。また、m、nが2のとき、複数のR、Rは、それぞれ同一でも、異なっていてもよい。] Wherein, T 1, T 2, B 1, B 2 are identical to those in the formula (1). R 1 to R 4 each independently represent an aliphatic hydrocarbon group having 1 to 6 carbon atoms, a hydroxyl group, an alkoxy group having 1 to 6 carbon atoms, or an aryloxy group having 6 to 10 carbon atoms. M 1 and M 2 each independently represent a boron atom or a tin atom. R 1 and R 2 may form a ring with M 1 , and R 3 and R 4 may form a ring with M 2 . m and n each represent an integer of 1 or 2; When m and n are 2, plural R 1 s and R 3 s may be the same or different. ]
Figure JPOXMLDOC01-appb-C000026
Figure JPOXMLDOC01-appb-C000026
[式中、R31~R34は、前記式(2a)、(2b)と同じである。Y~Yは、それぞれ独立に、ハロゲン原子を表し、好ましくは塩素原子又は臭素原子であり、より好ましくは臭素原子である。
 式(6)の−Y、−Yは、いずれも式(6)中のナフタレン環を形成する炭素原子に結合する。
 式(7)の−Y、−Yは、いずれも式(7)中のナフタレン環を形成する炭素原子に結合する。]
[Wherein, R 31 to R 34 are the same as the aforementioned formulas (2a) and (2b). Y 1 to Y 4 each independently represent a halogen atom, preferably a chlorine atom or a bromine atom, and more preferably a bromine atom.
Each of —Y 1 and —Y 2 in Formula (6) is bonded to a carbon atom forming a naphthalene ring in Formula (6).
Each of —Y 3 and —Y 4 in Formula (7) is bonded to a carbon atom forming a naphthalene ring in Formula (7). ]
 なおベンゾビスチアゾール型原料として式(4)化合物及び式(5)化合物のいずれを用いるかはB、Bの種類に応じて決定するのが好ましく、B、Bが、炭化水素基で置換されていてもよいチオフェン環(好ましくは、式(b1)で表される基)、または、炭化水素基で置換されていてもよいチアゾール環(好ましくは、式(b2)で表される基)である場合、式(5)の化合物を用いることが好ましく、B、Bが、エチニレン基(好ましくは、式(b3)で表される基)である場合、式(4)の化合物を用いることが好ましい。 Note is preferably determined depending on the type of B 1, B 2 or use any of the benzobisthiazole feedstock as formula (4) compound and formula (5) Compound, B 1, B 2 is a hydrocarbon group A thiophene ring (preferably a group represented by the formula (b1)) which may be substituted by or a thiazole ring optionally substituted by a hydrocarbon group (preferably represented by the formula (b2) When it is a group, it is preferable to use a compound of the formula (5), and when B 1 and B 2 are ethynylene groups (preferably, a group represented by the formula (b3)), It is preferred to use a compound.
 カップリング反応の詳細は、国際公開第2015/122321号パンフレットに記載の内容に従って適宜設定できる。
 また式(4)化合物及び式(5)化合物は、国際公開第2015/122321号パンフレットに記載の方法に従って適宜製造できる。
The details of the coupling reaction can be set as appropriate according to the contents described in WO 2015/122321.
Moreover, a formula (4) compound and a formula (5) compound can be suitably manufactured according to the method as described in an international publication 2015/122321 pamphlet.
 式(6)化合物及び式(7)化合物は、Chem.Commun.,2008,0,6034−6036、Org.Lett.,2010,12,228−231、Org.Lett.,2008,10,5333−5336などに記載の方法に従って適宜製造できる。また式(8)に示される3,4,9,10−ペリレンテトラカルボン酸二無水物又は式(9)に示される1,4,5,8−ナフタレンテトラカルボン酸二無水物(これらは、東京化成工業株式会社、シグマアルドリッチ社などから購入可能である)の芳香族環をハロゲン化(特に臭素化)し、必要に応じて精製(再結晶、カラムクロマトグラフィー)などを行って不純物(異性体)を除去することでジハロ前駆体(8x)、(9x)などを製造した後、対応するアミン化合物(NH−R31、NH−R32、NH−R33、NH−R34)(式中、R31~R34は、前記と同じ)でイミド化することによっても製造できる。さらに下記式(8)又は(9)に示される原料をアミン化合物(NH−R31、NH−R32、NH−R33、NH−R34)(式中、R31~R34は、前記と同じ)で処理してジイミド化体(8y)、(9y)などを製造した後、ハロゲン化(特に臭素化)することで製造してもよい。
Figure JPOXMLDOC01-appb-C000027
Figure JPOXMLDOC01-appb-C000028
[式中、−Y~−Y及びR31~R34は、前記と同じである。]
 なお式(6)化合物の中には、Luminescence Technology Corp.から購入可能なものもある。式(7)化合物の中には、東京化成工業株式会社から購入可能なものもある。
 ベンゾビスチアゾール型原料と、ペリレン/ナフタレンジイミド型原料のモル比は、例えば、1:99~99:1の範囲であり、20:80~80:20の範囲であることが好ましく、40:60~60:40の範囲であることがより好ましい。
Compounds of formula (6) and compounds of formula (7) are disclosed in Chem. Commun. , 2008, 0, 6034-6036, Org. Lett. , 2010, 12, 228-231, Org. Lett. , 2008, 10, 5333-5336, etc. can be suitably produced according to the method described in the like. In addition, 3,4,9,10-perylenetetracarboxylic dianhydride represented by the formula (8) or 1,4,5,8-naphthalenetetracarboxylic dianhydride represented by the formula (9) (these are Halogenated (especially brominated) aromatic rings of Tokyo Chemical Industry Co., Ltd., Sigma-Aldrich Co., etc.), and if necessary purification (recrystallization, column chromatography), etc. The corresponding amine compounds (NH 2 -R 31 , NH 2 -R 32 , NH 2 -R 33 , NH 2 -R, etc. are produced after dihalo precursors (8x), (9x) etc. are produced by removing the 34 ) (wherein R 31 to R 34 are as defined above) can also be produced by imidization. Further, as a raw material represented by the following formula (8) or (9), an amine compound (NH 2 -R 31 , NH 2 -R 32 , NH 2 -R 33 , NH 2 -R 34 ) (wherein, R 31 to R) 34 may be produced by treatment with (as described above) to produce diimidized compounds (8y), (9y) and the like, followed by halogenation (especially bromination).
Figure JPOXMLDOC01-appb-C000027
Figure JPOXMLDOC01-appb-C000028
[Wherein, -Y 1 to -Y 4 and R 31 to R 34 are as defined above. ]
Among the compounds of the formula (6), Luminescence Technology Corp. Some are available for purchase. Some of the compounds of formula (7) can be purchased from Tokyo Chemical Industry Co., Ltd.
The molar ratio of the benzobisthiazole type raw material to the perylene / naphthalene diimide type raw material is, for example, in the range of 1:99 to 99: 1, preferably in the range of 20:80 to 80:20, and 40:60. More preferably, it is in the range of ̃60: 40.
 3.用途
 以上の様にして得られる本発明の化合物は、アクセプター性に優れており、n型半導体として有用であり、例えば、有機エレクトロルミネッセンス、有機薄膜太陽電池、有機薄膜トランジスタなどでのn型半導体材料としての使用が期待される。特に有機薄膜太陽電池では、本発明のn型半導体化合物をアクセプター材料として用いると、従来のアクセプター材料であるPCBM(C61)(フェニルC61−酪酸メチルエステル)と同等の開放電圧(Voc)を示し、優れた可能性を示している。
3. The compound of the present invention obtained as described above is excellent in acceptor property and is useful as an n-type semiconductor, for example, as an n-type semiconductor material in organic electroluminescence, organic thin film solar cells, organic thin film transistors, etc. The use of is expected. In particular, in an organic thin film solar cell, when the n-type semiconductor compound of the present invention is used as an acceptor material, it exhibits an open voltage (Voc) equivalent to that of a conventional acceptor material PCBM (C61) (phenyl C61 -butyric acid methyl ester), It shows excellent possibilities.
 本発明のn型半導体化合物を有機太陽電池に用いる場合、組み合わせるp型半導体(ドナー材料)としては、例えば、ポリ−3−ヘキシルチオフェン(通称「P3HT」)、ポリ−p−フェニレンビニレン、ポリ−アルコキシ−p−フェニレンビニレン、ポリ−9,9−ジアルキルフルオレン、ポリ−p−フェニレンビニレンなどが挙げられ、ドナー−アクセプター型半導体材料も含まれる。ドナー−アクセプター型半導体材料としては、例えば、
 ポリ({4,8−ビス[(2−エチルヘキシル)オキシ]ベンゾ[1,2−b:4,5−b’]ジチオフェン−2,6−ジイル}{3−フルオロ−2−[(2−エチルヘキシル)カルボニル]チエノ[3,4−b]チオフェンジイル})(通称、PTB7)、ポリ[1−(6−{4,8−ビス[(2−エチルヘキシル)オキシ]−6−メチルベンゾ[1,2−b:4,5−b’]ジチオフェン−2−イル}{3−フルオロ−4−メチルチエノ[3,4−b]チオフェン−2−イル}−1−オクタノン)(通称、PBDTTT−CF)、ポリ[(4,8−ジ(2−エチルヘキシルオキシ)ベンゾ[1,2−b:4,5−b’]ジチオフェン)−2,6−ジイル−alt−((5−オクチルチエノ[3,4−c]ピロール−4,6−ジオン)−1,3−ジイル)(通称、PBDTTPD)などのベンゾジアジアゾール−2,6−ジイル基を有するドナー−アクセプター型ポリマー;
 ポリ[(4,4’−ビス(2−エチルヘキシル)ジチエノ[3,2−b:2’,3’−d]シロール)−2,6−ジイル−alt−(2,1,3−ベンゾチアジアゾール)−4,7−ジイル](通称、PSBTBT)、ポリ[N−9’’−ヘプタデカニル−2,7−カルバゾール−アルト−5,5−(4’,7’−ジ−2−チエニル−2’,1’,3’−ベンゾチアジアゾール)](通称、PCDTBT)などの2,1,3−ベンゾチアジアゾール−4,7−ジイル基を有するドナー−アクセプター型ポリマーなどが挙げられる。
Figure JPOXMLDOC01-appb-C000029
When the n-type semiconductor compound of the present invention is used in an organic solar cell, examples of p-type semiconductors (donor materials) to be combined include poly-3-hexylthiophene (generally called “P3HT”), poly-p-phenylenevinylene, and poly- Alkoxy-p-phenylenevinylene, poly-9,9-dialkylfluorene, poly-p-phenylenevinylene and the like can be mentioned, and a donor-acceptor type semiconductor material is also included. As a donor-acceptor type semiconductor material, for example,
Poly ({4,8-bis [(2-ethylhexyl) oxy] benzo [1,2-b: 4,5-b '] dithiophene-2,6-diyl} {3-fluoro-2-[(2- Ethylhexyl) carbonyl] thieno [3,4-b] thiophenediyl}) (commonly called PTB7), poly [1- (6- {4,8-bis [(2-ethylhexyl) oxy] -6-methylbenzo [1,1] 2-b: 4,5-b ′] dithiophen-2-yl} {3-fluoro-4-methylthieno [3,4-b] thiophen-2-yl} -1-octanone) (generally called PBDTTT-CF) , Poly [(4,8-di (2-ethylhexyloxy) benzo [1,2-b: 4,5-b ′] dithiophene) -2,6-diyl-alt-((5-octylthieno [3,4 -C] pyrrole-4,6-dione) -1,3 Diyl) (aka, PBDTTPD) donor having benzodioxazole thiadiazole-2,6-diyl group, such as - acceptor polymer;
Poly [(4,4'-bis (2-ethylhexyl) dithieno [3,2-b: 2 ', 3'-d] silole) -2,6-diyl-alt- (2,1,3-benzothiadiazole ) -4,7-diyl] (commonly called PSBTBT), poly [N-9 ′ ′-heptadecanyl-2,7-carbazole-alto-5,5- (4 ′, 7′-di-2-thienyl-2] Donor-acceptor type polymers having a 2,1,3-benzothiadiazole-4,7-diyl group such as ', 1', 3'-benzothiadiazole)] (generally called PCDTBT) and the like can be mentioned.
Figure JPOXMLDOC01-appb-C000029
 前記ドナー材料と、本発明のアクセプター材料(n型半導体)とは、互いに接触することで太陽電池の光発電部となる。接触の態様は適宜設定でき、ドナー材料を含む層とアクセプター材料とを含む層を積層してもよく、ドナー材料とアクセプター材料を含む混合した層であってもよい。 The donor material and the acceptor material (n-type semiconductor) of the present invention become a photovoltaic part of a solar cell by being in contact with each other. The mode of contact can be set as appropriate, and a layer containing a donor material and a layer containing an acceptor material may be stacked, or a mixed layer containing a donor material and an acceptor material may be used.
 本願は、2017年8月31日に出願された日本国特許出願第2017−167917号に基づく優先権の利益を主張するものである。2017年8月31日に出願された日本国特許出願第2017−167917号の明細書の全内容が、本願に参考のため援用される。 The present application claims the benefit of priority based on Japanese Patent Application No. 2017-167917 filed on August 31, 2017. The entire content of the specification of Japanese Patent Application No. 2017-167917 filed on August 31, 2017 is incorporated herein by reference.
 以下、実施例を挙げて本発明をより具体的に説明するが、本発明はもとより下記実施例によって制限を受けるものではなく、前・後記の趣旨に適合し得る範囲で適当に変更を加えて実施することも勿論可能であり、それらはいずれも本発明の技術的範囲に包含される。 EXAMPLES Hereinafter, the present invention will be more specifically described by way of examples. However, the present invention is of course not limited by the following examples, and appropriate modifications may be made as long as the present invention can be applied to the purpose. Of course, implementation is also possible, and all of them are included in the technical scope of the present invention.
 なお以下の例で得られた材料の各特性は、以下の様にして評価した。
 1)重量平均分子量(Mw)、数平均分子量(Mn)
 評価対象化合物を0.5g/Lの濃度となるように移動相溶媒(クロロホルム)に溶解して、下記条件でゲル浸透クロマトグラフィ(GPC)測定を行い、ポリスチレンを標準試料として作成した較正曲線に基づいて換算することによって、評価対象化合物の数平均分子量、重量平均分子量を算出した。測定におけるGPC条件は、下記の通りである。
 移動相:クロロホルム
 流速 :0.6mL/min
 装置 :HLC−8320GPC(東ソー社製)
 カラム:TSKgel(登録商標)、SuperHM−H’2 + TSKgel(登録商標)、SuperH2000(東ソー社製)
In addition, each characteristic of the material obtained by the following example was evaluated as follows.
1) Weight average molecular weight (Mw), number average molecular weight (Mn)
The compound to be evaluated is dissolved in a mobile phase solvent (chloroform) to a concentration of 0.5 g / L, gel permeation chromatography (GPC) measurement is performed under the following conditions, and polystyrene is used as a standard sample based on a calibration curve. The number average molecular weight and the weight average molecular weight of the compound to be evaluated were calculated by converting the value. The GPC conditions in the measurement are as follows.
Mobile phase: Chloroform flow rate: 0.6 mL / min
Device: HLC-8320GPC (made by Tosoh Corporation)
Column: TSKgel (registered trademark), SuperHM-H'2 + TSKgel (registered trademark), SuperH 2000 (manufactured by Tosoh Corporation)
 2)紫外可視吸収スペクトル
 0.03g/Lの濃度になる様に評価対象化合物をクロロホルムに溶解し、紫外・可視分光装置(島津製作所社製、「UV−2450」、「UV−3150」)、および光路長1cmのセルを用いて紫外可視吸収スペクトル測定を行った。
2) Ultraviolet-visible absorption spectrum A compound to be evaluated is dissolved in chloroform so as to have a concentration of 0.03 g / L, and an ultraviolet-visible spectroscope (manufactured by Shimadzu Corporation, "UV-2450", "UV-3150"), And ultraviolet visible absorption spectrum measurement was performed using the cell of 1 cm of optical path lengths.
 3)イオン化ポテンシャル(最高被占軌道(HOMO)エネルギー準位)
 ガラス基板上に評価対象化合物を50nm~100nmの厚みになるように成膜した。この膜について、常温常圧下、紫外線光電子分析装置(理研計器社製、「AC−3」)によりイオン化ポテンシャル(HOMOエネルギー準位)を測定した。
3) Ionization potential (highest occupied molecular orbital (HOMO) energy level)
The target compound to be evaluated was deposited on a glass substrate to a thickness of 50 nm to 100 nm. About this film | membrane, ionization potential (HOMO energy level) was measured by the ultraviolet-ray photoelectric analysis apparatus (The Riken Keiki Co., Ltd. make, "AC-3") under normal temperature normal pressure.
 4)最低空軌道(LUMO)エネルギー準位
 紫外可視吸収スペクトルの長波長側のピーク立ち上がり波長によって求まるエネルギーギャップ(HOMO−LUMO)と、イオン化ポテンシャルによって求まるHOMOエネルギー準位とからLUMOの準位を求めた。
4) Lowest unoccupied orbital (LUMO) energy level The LUMO level is determined from the energy gap (HOMO-LUMO) determined by the peak rising wavelength on the long wavelength side of the UV-visible absorption spectrum and the HOMO energy level determined by the ionization potential The
 5)光電変換特性1(ドナー:P3HT)
 ポリ(3−ヘキシルチオフェン)(P3HT)をドナー材料、評価対象化合物をアクセプター材料として用い、これらを下記表中の合計濃度かつドナー材料:アクセプター材料比となる様にクロロベンゼンに溶解させた。また1,8−ジヨードオクタンを用いる場合(用いるか否かは下記表中に記載)は、濃度0.02mL/mLとなるように前記クロロベンゼンに溶解させた。得られた溶液を0.45μmのフィルターに通して混合溶液とした。
 ITOが成膜されたガラス基板をオゾンUV処理して表面処理を行った後に、PEDOT−PSS(ポリ(3,4−エチレンジオキシチオフェン)−ポリ(スチレンスルホン酸))をスピンコーターで塗布した。次に、上記のドナー材料・アクセプター材料の混合溶液をスピンコーターで成膜して乾燥した(※1)。その上に、オルトチタン酸テトライソプロピルのエタノール溶液(約0.3v%)をスピンコートして雰囲気中の水分により酸化チタンに変換した膜を作製した。その後、電極であるアルミニウムを蒸着してデバイスとした。
 得られたデバイスにソーラーシミュレーター(CEP2000、AM1.5Gフィルター、放射強度100mW/cm、分光計器製)を用いて、Jsc(短絡電流密度)、Voc(開放電圧)、FF(曲線因子)を求めた。また下記式に基づいて光電変換効率ηを求めた。
 光電変換効率η=開放電圧(Voc)×短絡電流密度(Jsc)×曲線因子(FF)
 ※1 乾燥条件:アクセプター材料がP−THDT−DBTH−EH−PDI(実施例1)、又はPCBM(C61)(比較例1)の時は、110℃、15分。アクセプター材料がP−THDT−DBTH−EH−NDI(実施例2)の時は、室温、減圧条件。
5) Photoelectric conversion characteristic 1 (donor: P3HT)
Poly (3-hexylthiophene) (P3HT) was used as a donor material and a compound to be evaluated as an acceptor material, and these were dissolved in chlorobenzene so that the total concentration and donor material: acceptor material ratio in the table below could be obtained. Moreover, when 1, 8- diiodo octane was used (it describes in the following table whether to use), it was made to melt | dissolve in the said chlorobenzene so that it might become density | concentration 0.02 mL / mL. The resulting solution was passed through a 0.45 μm filter to form a mixed solution.
A glass substrate on which ITO was formed was subjected to ozone UV treatment to perform surface treatment, and then PEDOT-PSS (poly (3,4-ethylenedioxythiophene) -poly (styrenesulfonic acid)) was applied by a spin coater. . Next, a mixed solution of the above donor material and acceptor material was formed into a film by a spin coater and dried (* 1). Then, an ethanol solution (about 0.3 v%) of tetraisopropyl orthotitanate was spin-coated to prepare a film converted to titanium oxide by moisture in the atmosphere. Thereafter, aluminum as an electrode was vapor deposited to form a device.
Calculate Jsc (short circuit current density), Voc (open circuit voltage), and FF (curve factor) using a solar simulator (CEP 2000, AM 1.5 G filter, radiation intensity 100 mW / cm 2 , spectrometer manufactured by the obtained device) The Further, the photoelectric conversion efficiency η was determined based on the following equation.
Photoelectric conversion efficiency η = open circuit voltage (Voc) × short circuit current density (Jsc) × curve factor (FF)
* 1 Drying conditions: When the acceptor material is P-THDT-DBTH-EH-PDI (Example 1) or PCBM (C61) (Comparative Example 1), 110 ° C., 15 minutes. When the acceptor material is P-THDT-DBTH-EH-NDI (Example 2), room temperature, reduced pressure conditions.
 6)光電変換特性2(ドナー:PTB7)
 ポリ{4、8−ビス[(2−エチルヘキシル)オキシ)ベンゾ[1,2−b:4,5−b’]ジチオフェン−2,6−ジイル−lt−alt−3−フルオロ−2−[(2−エチルヘキシル)カルボニル]チエノ[3,4−b]チオフェン−4,6−ジイル}(PTB7)をドナー材料、評価対象化合物をアクセプター材料として用い、これらを下記様中の合計濃度かつドナー材料:アクセプター材料比となる様にクロロベンゼンに溶解させた。また1,8−ジヨードオクタンを用いる場合(用いるか否かは下記表中に記載)は、濃度0.02mL/mLとなるように前記クロロベンゼンに溶解させた。得られた溶液を0.45μmのフィルターに通して混合溶液とした。
 ITOが成膜されたガラス基板をオゾンUV処理して表面処理を行った後に、PEDOT−PSS(ポリ(3,4−エチレンジオキシチオフェン)−ポリ(スチレンスルホン酸))をスピンコーターで塗布した。次に、上記のドナー材料・アクセプター材料の混合溶液をスピンコーターで成膜して110℃で15分間加熱した。その上に、オルトチタン酸テトライソプロピルのエタノール溶液(約0.3v%)をスピンコートして雰囲気中の水分により酸化チタンに変換した膜を作製した。その後、電極であるアルミニウムを蒸着してデバイスとした。
 得られたデバイスにソーラーシミュレーター(CEP2000、AM1.5Gフィルター、放射強度100mW/cm、分光計器製)を用いて、Jsc(短絡電流密度)、Voc(開放電圧)、FF(曲線因子)、光電変換効率ηを求めた。
6) Photoelectric conversion characteristic 2 (donor: PTB7)
Poly {4, 8-bis [(2-ethylhexyl) oxy) benzo [1,2-b: 4,5-b '] dithiophene-2,6-diyl-lt-alt-3-fluoro-2-[( 2-Ethylhexyl) carbonyl] thieno [3,4-b] thiophene-4,6-diyl} (PTB7) is used as a donor material, and a compound to be evaluated is used as an acceptor material, and the total concentration in the following manner and the donor material are: It was dissolved in chlorobenzene so as to obtain the acceptor material ratio. Moreover, when 1, 8- diiodo octane was used (it describes in the following table whether to use), it was made to melt | dissolve in the said chlorobenzene so that it might become density | concentration 0.02 mL / mL. The resulting solution was passed through a 0.45 μm filter to form a mixed solution.
A glass substrate on which ITO was formed was subjected to ozone UV treatment to perform surface treatment, and then PEDOT-PSS (poly (3,4-ethylenedioxythiophene) -poly (styrenesulfonic acid)) was applied by a spin coater. . Next, a mixed solution of the above donor material and acceptor material was formed into a film by a spin coater and heated at 110 ° C. for 15 minutes. Then, an ethanol solution (about 0.3 v%) of tetraisopropyl orthotitanate was spin-coated to prepare a film converted to titanium oxide by moisture in the atmosphere. Thereafter, aluminum as an electrode was vapor deposited to form a device.
Jsc (short circuit current density), Voc (open circuit voltage), FF (curve factor), photoelectricity using a solar simulator (CEP 2000, AM 1.5 G filter, radiation intensity 100 mW / cm 2 , spectrometer manufactured) as the obtained device The conversion efficiency η was determined.
 実施例1
 P−THDT−DBTH−EH−PDI
Figure JPOXMLDOC01-appb-C000030
Example 1
P-THDT-DBTH-EH-PDI
Figure JPOXMLDOC01-appb-C000030
 20mLフラスコに、2,6−ビス[5−(2−ヘキシルデシル)チオフェン−2−イル]−4,8−ビス(5−トリメチルスタンニルチオフェン−2−イル)−ベンゾ[1,2−d;4,5−d’]ビスチアゾール(DTH−DBTH−HDTH−DSM、100mg、0.077mmol)(国際公開第2015/122321号パンフレットの実施例19の方法に準じて製造されたもの)、N,N−ビス(2−エチルヘキシル)−1,7−ジブロモ−3,4,9,10−ペリレンジイミド(EH−PDI−DB、60mg、0.077mmol)(Luminescence Technology Corp.より購入)、トリス(ジベンジリデンアセトン)ジパラジウム(0)−クロロホルム付加体(Pd(dba)・CHCl)(3mg、2.9μmol)、トリス(2−メトキシフェニル)ホスフィン(P(2MeO−Ph))(5mg、13.1μmol)およびクロロベンゼン(Cl−Ph)(8.0mL)を加え130℃で24時間反応した。反応終了後、メタノール(30mL)に反応液を加えて析出した固体をろ取して、得られた固体をソックスレー洗浄(メタノール、アセトン、ヘキサン)した。次いでソックスレー抽出(クロロホルム)することでP−THDT−DBTH−EH−PDIが101mg(83%)で黒色固体として得られた。
 得られた目的化合物の分子量、紫外可視スペクトル、HOMOエネルギー準位、LUMOエネルギー準位を調べた結果を下記表1に示す。
 また得られた目的化合物を用いた光電変換特性1(ドナー:P3HT)及び光電変換特性2の結果(ドナー:PTB7)の結果を下記表1に示す。
In a 20 mL flask, 2,6-bis [5- (2-hexyldecyl) thiophen-2-yl] -4,8-bis (5-trimethylstannylthiophen-2-yl) -benzo [1,2-d 4,5-d ′] bisthiazole (DTH-DBTH-HDTH-DSM, 100 mg, 0.077 mmol) (manufactured according to the method of Example 19 of WO 2015/122321 pamphlet), N N-bis (2-ethylhexyl) -1,7-dibromo-3,4,9,10-perylenediimide (EH-PDI-DB, 60 mg, 0.077 mmol) (purchased from Luminescence Technology Corp.), tris Dibenzylideneacetone) dipalladium (0) -chloroform adduct (Pd 2 (dba) 3 · CHCl 3 3 ) (3 mg, 2.9 μmol), tris (2-methoxyphenyl) phosphine (P (2MeO-Ph) 3 ) (5 mg, 13.1 μmol) and chlorobenzene (Cl-Ph) (8.0 mL) were added to 130 ° C. Reacted for 24 hours. After completion of the reaction, the reaction solution was added to methanol (30 mL), and the precipitated solid was collected by filtration, and the obtained solid was washed by Soxhlet (methanol, acetone, hexane). Next, Soxhlet extraction (chloroform) gave 101 mg (83%) of P-THDT-DBTH-EH-PDI as a black solid.
The molecular weight, ultraviolet-visible spectrum, HOMO energy level, and LUMO energy level of the obtained target compound were examined. The results are shown in Table 1 below.
Further, the results of photoelectric conversion characteristic 1 (donor: P3HT) and photoelectric conversion characteristic 2 (donor: PTB 7) using the obtained target compound are shown in Table 1 below.
 実施例2
P−THDT−DBTH−EH−NDI
Figure JPOXMLDOC01-appb-C000031
Example 2
P-THDT-DBTH-EH-NDI
Figure JPOXMLDOC01-appb-C000031
 20mLフラスコに、2,6−ビス[5−(2−ヘキシルデシル)チオフェン−2−イル]−4,8−ビス(5−トリメチルスタンニルチオフェン−2−イル)−ベンゾ[1,2−d;4,5−d’]ビスチアゾール(DTH−DBTH−HDTH−DSM、100mg、0.077mmol)(国際公開第2015/122321号パンフレットの実施例19の方法に準じて製造されたもの)、N,N−ジ(2−エチルヘキシル)−2,6−ジブロモ−1,4,5,8−ナフタレンジイミド(EH−NDI−DB、50mg、0.077mmol)(東京化成工業株式会社より購入)、トリス(ジベンジリデンアセトン)ジパラジウム(0)−クロロホルム付加体(Pd(dba)・CHCl)(3mg、2.9μmol)、トリス(2−メトキシフェニル)ホスフィン(P(2MeO−Ph))(5mg、13.1μmol)およびクロロベンゼン(Cl−Ph)(8.0mL)を加え130℃で24時間反応した。反応終了後、メタノール(30mL)に反応液を加えて析出した固体をろ取して、得られた固体をソックスレー洗浄(メタノール、アセトン、ヘキサン)した。次いでソックスレー抽出(クロロホルム)することでP−THDT−DBTH−EH−NDIが93mg(83%)で黒色固体として得られた。
 得られた目的化合物の分子量、紫外可視スペクトル、HOMOエネルギー準位、LUMOエネルギー準位を調べた結果を下記表1に示す。
 また得られた目的化合物を用いた光電変換特性1(ドナー:P3HT)の結果を下記表1に示す。
In a 20 mL flask, 2,6-bis [5- (2-hexyldecyl) thiophen-2-yl] -4,8-bis (5-trimethylstannylthiophen-2-yl) -benzo [1,2-d 4,5-d ′] bisthiazole (DTH-DBTH-HDTH-DSM, 100 mg, 0.077 mmol) (manufactured according to the method of Example 19 of WO 2015/122321 pamphlet), N N-di (2-ethylhexyl) -2,6-dibromo-1,4,5,8-naphthalenediimide (EH-NDI-DB, 50 mg, 0.077 mmol) (purchased from Tokyo Chemical Industry Co., Ltd.), tris (dibenzylideneacetone) dipalladium (0) - chloroform adduct (Pd 2 (dba) 3 · CHCl 3) (3mg, 2.9μmol), tri (2-methoxyphenyl) phosphine (P (2MeO-Ph) 3 ) (5mg, 13.1μmol) and chlorobenzene (Cl-Ph) (8.0 mL) for 24 hours at 130 ° C. added. After completion of the reaction, the reaction solution was added to methanol (30 mL), and the precipitated solid was collected by filtration, and the obtained solid was washed by Soxhlet (methanol, acetone, hexane). Then, Soxhlet extraction (chloroform) gave 93 mg (83%) of P-THDT-DBTH-EH-NDI as a black solid.
The molecular weight, ultraviolet-visible spectrum, HOMO energy level, and LUMO energy level of the obtained target compound were examined. The results are shown in Table 1 below.
The results of photoelectric conversion characteristic 1 (donor: P3HT) using the obtained target compound are shown in Table 1 below.
 比較例1
 ポリ(3−ヘキシルチオフェン)(P3HT)をドナー材料、PCBM(C61)(フェニルC61−酪酸メチルエステル)をアクセプター材料として用いて、光電変換特性1を調べた。結果を下記表1に示す。
Comparative Example 1
Photoelectric conversion characteristics 1 were investigated using poly (3-hexylthiophene) (P3HT) as a donor material and PCBM (C61) (phenyl C61-butyric acid methyl ester) as an acceptor material. The results are shown in Table 1 below.
Figure JPOXMLDOC01-appb-T000032
Figure JPOXMLDOC01-appb-T000032
 上記表より明らかな様に、実施例のアクセプター材料を用いると、得られる光電変換素子は高いVoc(開放電圧)を示し、有機薄膜太陽電池としての利用可能性がある事が示された。 As apparent from the above table, when the acceptor material of the example is used, the obtained photoelectric conversion device exhibits a high Voc (open circuit voltage), indicating that it can be used as an organic thin film solar cell.
 本発明の化合物は、n型半導体として使用可能である。このような化合物は、例えば、電子と正孔が再結合して形成する励起子(エキシトン)の作用により発光する有機エレクトロルミネッセンス、光を電力に変換する有機薄膜太陽電池、電流量や電圧量を制御する有機薄膜トランジスタなどに利用できる。 The compounds of the present invention can be used as n-type semiconductors. Such compounds include, for example, organic electroluminescence that emits light by the action of excitons (excitons) formed by recombination of electrons and holes, an organic thin film solar cell that converts light into electric power, and the amount of current and voltage. It can be used for controlling organic thin film transistors and the like.

Claims (5)

  1.  下記式(1)で表される第1の2価の有機基と、下記式(2a)及び式(2b)から選ばれる第2の2価の有機基とをそれぞれ1つ以上有し、かつ第1の2価の有機基と第2の2価の有機基が交互に並ぶことを特徴とする化合物。
    Figure JPOXMLDOC01-appb-C000001
    [式中、
     T、Tは、それぞれ独立に、
     アルコキシ基;
     チオアルコキシ基;
     炭化水素基もしくはオルガノシリル基で置換されていてもよいチオフェン環;
     炭化水素基もしくはオルガノシリル基で置換されていてもよいチアゾール環;または、
     炭化水素基、アルコキシ基、チオアルコキシ基、オルガノシリル基、ハロゲン原子、もしくはトリフルオロメチル基で置換されていてもよいフェニル基を示す。
     B、Bは、炭化水素基で置換されていてもよいチオフェン環、炭化水素基で置換されていてもよいチアゾール環、または、エチニレン基を示す。
     R31~R34は、それぞれ独立に、水素原子、炭素数6~30の炭化水素基、または*−Si(R40を示す。
     R40は、炭素数1~20の脂肪族炭化水素基、または炭素数6~10の芳香族炭化水素基を示し、複数のR40は、同一でも異なっていてもよい。
     式(2a)及び式(2b)中の*−は式(1)の有機基との結合手を表し、その片端は式(2a)又は式(2b)の部分構造であるナフタレン環を形成する炭素原子と結合する。]
    And one or more of a first divalent organic group represented by the following formula (1) and a second divalent organic group selected from the following formulas (2a) and (2b), and A compound characterized in that a first divalent organic group and a second divalent organic group are alternately arranged.
    Figure JPOXMLDOC01-appb-C000001
    [In the formula,
    T 1 and T 2 are each independently
    An alkoxy group;
    A thioalkoxy group;
    A thiophene ring optionally substituted with a hydrocarbon group or an organosilyl group;
    A thiazole ring optionally substituted with a hydrocarbon group or an organosilyl group; or
    It represents a phenyl group which may be substituted by a hydrocarbon group, an alkoxy group, a thioalkoxy group, an organosilyl group, a halogen atom or a trifluoromethyl group.
    B 1 and B 2 each represent a thiophene ring which may be substituted by a hydrocarbon group, a thiazole ring which may be substituted by a hydrocarbon group, or an ethynylene group.
    R 31 to R 34 each independently represent a hydrogen atom, a hydrocarbon group having 6 to 30 carbon atoms, or * -Si (R 40 ) 3 .
    R 40 represents an aliphatic hydrocarbon group having 1 to 20 carbon atoms or an aromatic hydrocarbon group having 6 to 10 carbon atoms, and a plurality of R 40 s may be the same or different.
    In the formulas (2a) and (2b), *-represents a bond with the organic group of the formula (1), and one end thereof forms a naphthalene ring which is a partial structure of the formula (2a) or the formula (2b) Bond to a carbon atom. ]
  2.  T、Tが、それぞれ、下記式(t1)~(t5)のいずれかで表される基である請求項1に記載の化合物。
    Figure JPOXMLDOC01-appb-C000002
    [式(t1)~(t5)中、
     R13~R14は、それぞれ独立に、炭素数6~30の炭化水素基を示す。
     R15a~R16aは、それぞれ独立に、炭素数6~30の炭化水素基、または*−Si(R18を示す。
     R15b~R16bは、それぞれ独立に、水素原子、炭素数6~30の炭化水素基、または*−Si(R18を示す。
     R17aは、炭素数6~30の炭化水素基、*−O−R19、*−S−R20、*−Si(R18、ハロゲン原子、または*−CFを示す。
     R17bは、水素原子、炭素数6~30の炭化水素基、*−O−R19、*−S−R20、*−Si(R18、ハロゲン原子、または*−CFを示す。
     R18は、炭素数1~20の脂肪族炭化水素基、または炭素数6~10の芳香族炭化水素基を示し、複数のR18は、同一でも異なっていてもよい。
     R19~R20は、それぞれ独立に、炭素数6~30の炭化水素基を示す。
     *は結合手を表す。]
    2. The compound according to claim 1 , wherein T 1 and T 2 are each a group represented by any one of the following formulas (t1) to (t5).
    Figure JPOXMLDOC01-appb-C000002
    [In the formulas (t1) to (t5),
    R 13 to R 14 each independently represent a hydrocarbon group having 6 to 30 carbon atoms.
    R 15a to R 16a each independently represent a hydrocarbon group having 6 to 30 carbon atoms, or * -Si (R 18 ) 3 .
    Each of R 15b to R 16b independently represents a hydrogen atom, a hydrocarbon group having a carbon number of 6 to 30, or * -Si (R 18 ) 3 .
    R 17a represents a hydrocarbon group having 6 to 30 carbon atoms, * -O-R 19 , * -S-R 20 , * -Si (R 18 ) 3 , a halogen atom, or * -CF 3 .
    R 17b represents a hydrogen atom, a hydrocarbon group having 6 to 30 carbon atoms, * -O-R 19 , * -S-R 20 , * -Si (R 18 ) 3 , a halogen atom, or * -CF 3 .
    R 18 represents an aliphatic hydrocarbon group having 1 to 20 carbon atoms or an aromatic hydrocarbon group having 6 to 10 carbon atoms, and a plurality of R 18 s may be the same or different.
    R 19 to R 20 each independently represent a hydrocarbon group having 6 to 30 carbon atoms.
    * Represents a bond. ]
  3.  B、Bが、それぞれ、下記式(b1)~(b3)のいずれかで表される基である請求項1または2に記載の化合物。
    Figure JPOXMLDOC01-appb-C000003
    [式(b1)~(b3)中、R21a、R21b、R22は、それぞれ独立に、水素原子または炭素数6~30の炭化水素基を表す。*は結合手を表し、特に左側の*は、ベンゾビスチアゾール構造のベンゼン環に結合する結合手を表すものとする。]
    3. The compound according to claim 1 , wherein B 1 and B 2 are each a group represented by any one of the following formulas (b1) to (b3).
    Figure JPOXMLDOC01-appb-C000003
    [In the formulas (b1) to (b3), R 21a , R 21b and R 22 each independently represent a hydrogen atom or a hydrocarbon group having 6 to 30 carbon atoms. The symbol * represents a bond, and in particular the symbol * on the left represents a bond bonded to the benzene ring of the benzobisthiazole structure. ]
  4.  請求項1~3のいずれかに記載の化合物を含むn型半導体。 An n-type semiconductor comprising the compound according to any one of claims 1 to 3.
  5.  ドナー材料と、請求項1~3のいずれかに記載の化合物を含むアクセプター材料とが接触した光発電部を有する太陽電池。 A solar cell comprising a photovoltaic part in contact with a donor material and an acceptor material comprising the compound according to any one of claims 1 to 3.
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