WO2019035431A1 - Sealing resin composition, method for producing sealing resin composition, semiconductor device, and method for producing semiconductor device - Google Patents

Abstract

This sealing resin composition satisfies at least any of conditions (1)-(3) below: condition (1) an epoxy resin and an inorganic filler material are included, and the specific surface area of the inorganic filler material is not more than 3.28 m2/g; condition (2) an epoxy resin, an inorganic filler material, and a silane coupling agent including –NH2 or –SH are included; and condition (3) an epoxy resin and an inorganic filler material are included, and the crosslink density in a cured state is either 0.9 mol/cm3 or lower, or 1.0 mol/cm3 or higher.

Description

Sealing resin composition, method of manufacturing sealing resin composition, semiconductor device, and method of manufacturing semiconductor device

The present invention relates to a sealing resin composition, a method of manufacturing a sealing resin composition, a semiconductor device, and a method of manufacturing a semiconductor device.

The power semiconductor device is a kind of semiconductor device mainly used for control of voltage or frequency of electric power, direct current to alternating current, or conversion from alternating current to direct current, and is a source of power for electronic devices, motors, power generators and the like. It is used in various fields. For this reason, the semiconductor device (power semiconductor device) provided with the power semiconductor element is required to have electrical reliability that can withstand use under high voltage and large current conditions. For example, it is required that the leak current generated in a high temperature reverse bias test (High Temperature Reverse Bias, HTRB) be sufficiently small (see, for example, Patent Document 1).

Unexamined-Japanese-Patent No. 2017-45747

A resin composition containing an epoxy resin such as an epoxy resin is widely used as a sealing resin composition for sealing a power semiconductor element. In order to improve the electrical reliability of power semiconductor devices, studies are being conducted on resin compositions suitable for sealing power semiconductor elements from the viewpoint of glass transition temperature, impurity content, etc. There are some parts that can not be explained.
In view of the above circumstances, the present invention provides a sealing resin composition capable of producing a semiconductor device having excellent electrical reliability, a method of producing a sealing resin composition, and a semiconductor device and a method of producing a semiconductor device using the same. The purpose is to

Means for solving the above problems include the following embodiments.
The sealing resin composition containing a <1> epoxy resin and an inorganic filler, and the specific surface area of the said inorganic filler is 3.28 m < ² > / g or less.
The sealing resin composition as described in <1> whose dielectric relaxation value measured by frequency 0.001 Hz in <2> hardening | curing state is 20 or less.
<3> the epoxy resin, an inorganic filler, containing a silane coupling agent having an -NH ₂ or -SH, encapsulating resin composition.
The sealing resin composition as described in <3> whose dielectric relaxation value measured by frequency 0.001 Hz in <4> hardening | curing state is 13 or less.
<5> the epoxy resin contains an inorganic filler, or crosslink density in the cured state is 0.9 mol / cm ³ or less, or 1.0 mol / cm ³ or more, the resin composition for sealing object.
The sealing resin composition as described in <5> whose dielectric relaxation value measured by frequency 0.001 Hz in <6> hardening | curing state is 20 or less.
The sealing resin composition according to any one of <1> to <6>, which is used for sealing a <7> power semiconductor element.
The sealing resin composition according to any one of <1> to <7>, wherein a content of the inorganic filler is 70% by volume or more of the sealing resin composition.
<9> crosslink density in the cured state or at 0.9 mol / cm ³ or less, or 1.0 mol / cm comprising the ^three steps of controlling so that the above, one of <1> to <8> The manufacturing method of the resin composition for sealing of 1 item.
<10> A support, a semiconductor element disposed on the support, and the sealing resin composition according to any one of <1> to <8>, which seals the semiconductor element And a cured product.
<11> A semiconductor device including a step of disposing a semiconductor element on a support, and a step of sealing with the sealing resin composition according to any one of the above-mentioned semiconductor elements <1> to <8>. Manufacturing method.

ADVANTAGE OF THE INVENTION According to the present invention, a sealing resin composition and a method for producing a sealing resin composition capable of producing a semiconductor device excellent in electric reliability, and a semiconductor device and a method for producing a semiconductor device using the same are provided. .

It is the schematic which shows an example of a structure of a dielectric relaxation measuring apparatus. It is a scatter diagram which shows the correlation of the specific surface area of the inorganic filler contained in the resin composition for sealing produced in the Example (1st Embodiment), and a dielectric relaxation value (frequency 0.001 Hz). It is a scatter diagram which shows the correlation of the crosslinking density of the resin composition for sealing produced by the Example (3rd Embodiment), and a dielectric relaxation value. It is a scatter diagram which shows the correlation of the dielectric relaxation value (frequency 0.001 Hz) of the resin composition for sealing produced by the reference example, and a high temperature reverse bias test result. It is a scatter diagram which shows the correlation of the dielectric relaxation value (frequency 1 MHz) of the resin composition for sealing produced by the reference example, and a high temperature reverse bias test result.

Hereinafter, modes for carrying out the present invention will be described in detail. However, the present invention is not limited to the following embodiments. In the following embodiments, the constituent elements (including element steps and the like) are not essential unless otherwise specified. The same applies to numerical values and ranges thereof, and does not limit the present invention.

In the present disclosure, the term “step” includes, in addition to steps independent of other steps, such steps as long as the purpose of the step is achieved even if it can not be clearly distinguished from other steps. .
In the present disclosure, numerical values described before and after “to” are included in the numerical range indicated using “to” as the minimum value and the maximum value, respectively.
The upper limit value or the lower limit value described in one numerical value range may be replaced with the upper limit value or the lower limit value of the other stepwise description numerical value range in the numerical value range described stepwise in the present disclosure. . In addition, in the numerical range described in the present disclosure, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the example.
In the present disclosure, each component may contain a plurality of corresponding substances. When a plurality of substances corresponding to each component are present in the composition, the content or content of each component is the total content or content of the plurality of substances present in the composition unless otherwise specified. Means quantity.
In the present disclosure, particles corresponding to each component may contain a plurality of types. When there are a plurality of particles corresponding to each component in the composition, the particle diameter of each component means the value for the mixture of the plurality of particles present in the composition unless otherwise specified.

<Resin composition for sealing (first embodiment)>
The sealing resin composition of the present embodiment contains an epoxy resin and an inorganic filler, and the specific surface area of the inorganic filler is 3.28 m ² / g or less.

As a result of studies by the present inventors, the specific surface area of the inorganic filler contained in the sealing resin composition is correlated with the dielectric relaxation value measured at 0.001 Hz in the cured resin composition. It turned out that it is related. The reason for this is not necessarily clear, but it is assumed that the number of hydroxyl groups present on the surface of the inorganic filler changes in accordance with the specific surface area, which is responsible for the increase or decrease of the dielectric relaxation value measured at low frequencies. ing.

As a result of further investigation based on the above findings, the smaller the dielectric relaxation value measured at 0.001 Hz in the cured resin composition, the smaller the semiconductor device using this is in the high temperature reverse bias test. Leakage current was sufficiently small, and it was found that the electrical reliability was excellent.

In the present embodiment, the specific surface area of the inorganic filler is a value measured by the BET method.

The dielectric relaxation value measured in the cured state of the sealing resin composition in the present embodiment is a value measured by low-frequency dielectric measurement. From the viewpoint of the electrical reliability of the semiconductor device, the dielectric relaxation value measured at a frequency of 0.001 Hz is preferably 20 or less, more preferably 17 or less, and still more preferably 15 or less. Is particularly preferred.

The dielectric relaxation value measured in a cured state of the sealing resin composition is considered to decrease as the amount of the inorganic filler is large (for example, 70% by volume or more of the entire sealing resin composition). On the other hand, increasing the amount of the inorganic filler tends to cause problems such as difficulty in the kneading operation and deterioration of the dispersibility. According to this embodiment, the dielectric relaxation value measured at a frequency of 0.001 Hz can be controlled by adjusting the specific surface area of the inorganic filler. Therefore, the effect of improving the electrical reliability can be expected regardless of the increase in the amount of the inorganic filler.

The sealing resin composition of the present embodiment may contain the silane coupling agent defined in the second embodiment, and may satisfy the conditions of the crosslink density defined in the third embodiment.

<Resin composition for sealing (second embodiment)>
The sealing resin composition of the present embodiment contains an epoxy resin, an inorganic filler, and a silane coupling agent having —NH ₂ or —SH.
As a silane coupling agent having —NH ₂ , N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyl Trimethoxysilane, 3-aminopropyltriethoxysilane and the like can be mentioned.
Examples of the silane coupling agent having —SH include 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane and the like.
The coupling agent may be used in combination with a coupling agent other than a silane coupling agent having —NH ₂ or —SH.

As a result of studies by the present inventors, a sealing resin composition containing a silane coupling agent having -NH ₂ or -SH has a sealing resin composition containing a silane coupling agent having another functional group. It has been found that the dielectric relaxation value measured at a frequency of 0.001 Hz tends to be smaller than that of the object. The reason for this is not necessarily clear, but it is speculated that -NH ₂ or -SH is more reactive with the epoxy group of the epoxy resin than other functional groups, and has a greater effect of suppressing molecular motion of the epoxy resin. ing.

As a result of further investigation based on the above findings, the smaller the dielectric relaxation value measured at 0.001 Hz in the cured resin composition, the semiconductor device using the same occurs in a high temperature reverse bias test. It was found that the leakage current was sufficiently small and the electrical reliability was excellent.

The dielectric relaxation value measured in the cured state of the sealing resin composition in the present embodiment is a value measured by low-frequency dielectric measurement. From the viewpoint of the electrical reliability of the semiconductor device, the dielectric relaxation value measured at a frequency of 0.001 Hz of the sealing resin composition is preferably 20 or less, more preferably 15 or less, and 13 or less. Is more preferred. Further, the maximum value of the dielectric relaxation value obtained at a frequency of 0 Hz to 0.01 Hz is preferably 40 or less, more preferably 30 or less, and still more preferably 20 or less.

The dielectric relaxation value of the sealing resin composition is considered to decrease as the amount of the inorganic filler is large (for example, 70% by volume or more of the total of the sealing resin composition). On the other hand, increasing the amount of the inorganic filler tends to cause problems such as difficulty in the kneading operation and deterioration of the dispersibility. According to this embodiment, the dielectric relaxation value measured at a frequency of 0.001 Hz can be controlled by using a silane coupling agent having a specific substituent. Therefore, the effect of improving the electrical reliability can be expected regardless of the increase in the amount of the inorganic filler.

In addition, it is known that the dielectric loss tangent value of the resin composition for sealing falls by surface-treating an inorganic filler using the silane coupling agent which has a glycidyl group (for example, Unexamined-Japanese-Patent No. 9-194690) However, the contribution to the dielectric constant in the low frequency region has not been reported so far.

The sealing resin composition of the present embodiment may satisfy the conditions of the inorganic filler defined in the first embodiment, and may satisfy the conditions of the crosslink density defined in the third embodiment.

<Resin composition for sealing (third embodiment)>
Encapsulating resin composition of the present embodiment, an epoxy resin, containing an inorganic filler, the crosslinking density in the cured state is 0.9 mol / cm ³ or less or where 1.0 mol / cm ³ It is above.

The semiconductor device manufactured using the resin composition for sealing of this embodiment is excellent in electrical reliability. When this reason was examined, the crosslink density in the state which the resin composition for sealing hardened | cured material (Hereafter, it is also only called "crosslink density." The unit of crosslink density may also be called mol / cc.), An association was found between the dielectric relaxation values measured at a frequency of 0.001 Hz. Specifically, when the crosslinking density of the sealing resin composition is 0.9 mol / cm ³ or less, the dielectric relaxation value measured at a frequency of 0.001 Hz tends to increase as the crosslinking density increases, 1 It was found that in the range of 0 mol / cm ³ or more, the dielectric relaxation value measured at a frequency of 0.001 Hz tends to decrease as the crosslink density increases.

The reason why the crosslink density of the sealing resin composition is related to the dielectric relaxation value measured at a frequency of 0.001 Hz as described above is not necessarily clear, but the higher the crosslink density, the more the dipolar motion While it tends to be suppressed, it is presumed that the amount of dipole tends to increase as the crosslink density increases.

Furthermore, according to the study of the present inventors, a semiconductor device using a sealing resin composition having a sufficiently small dielectric relaxation value measured at a frequency of 0.001 Hz in a cured state is a leak generated in a high temperature reverse bias test. It was found that the current was sufficiently small and the electrical reliability was excellent.

From the above, the sealing resin composition of the present disclosure is a semiconductor excellent in electrical reliability as a result of the crosslink density being within a specific range and the dielectric relaxation value measured at a frequency of 0.001 Hz being suppressed to a small value. It is believed that the device can be manufactured.

In the present disclosure, the crosslink density of the sealing resin composition is a value calculated according to the following equation using the dynamic storage elastic modulus of the rubber region obtained by the dynamic viscoelasticity measurement device.

Formula: n = E '/ 3 RT
n: Crosslink density [mol / cm ³ ]
E ': dynamic storage elastic modulus [Pa]
R: Gas constant 8.31 [J / mol · K]
T: Absolute temperature [K]

The lower limit value of the crosslinking density of the sealing resin composition is not particularly limited, but is preferably 0.3 mol / cm ³ or more from the viewpoint of curability.
The upper limit of the crosslink density of the sealing resin composition is not particularly limited, but is preferably 3.0 mol / cm ³ or less from the viewpoint of temperature cycling.

The dielectric relaxation value measured in the cured state of the sealing resin composition in the present embodiment is a value measured by the low frequency side dielectric constant. From the viewpoint of the electrical reliability of the semiconductor device, the dielectric relaxation value measured at a frequency of 0.001 Hz in the cured state of the sealing resin composition is preferably 20 or less, and more preferably 16 or less. . In addition, the maximum value of the dielectric relaxation value measured at a frequency of 0 Hz to 0.01 Hz is preferably 40 or less, and more preferably 16 or less.

The dielectric relaxation value of the sealing resin composition is considered to decrease as much as the amount of the inorganic filler (for example, 70% by volume or more of the entire sealing resin composition). On the other hand, increasing the amount of the inorganic filler tends to cause problems such as difficulty in the kneading operation and deterioration of the dispersibility. According to the present disclosure, the dielectric relaxation value can be controlled by adjusting the crosslink density of the sealing resin composition. Therefore, the effect of improving the electrical reliability can be expected regardless of the increase in the amount of the inorganic filler.

The sealing resin composition of the present embodiment may satisfy the conditions of the inorganic filler defined in the first embodiment, and may contain the coupling agent defined in the second embodiment.

(Epoxy resin)
The kind in particular of the epoxy resin contained in the resin composition for closure is not restricted, but can be chosen from what is generally used for the resin composition for closure.
Specifically, at least one phenol selected from the group consisting of phenol compounds such as phenol, cresol, xylenol, resorcine, catechol, bisphenol A and bisphenol F and naphthol compounds such as α-naphthol, β-naphthol and dihydroxynaphthalene. Novolak type epoxy resin (phenol novolac type epoxy resin) obtained by epoxidizing a novolak resin obtained by condensation or cocondensation of an organic compound with an aliphatic aldehyde compound such as formaldehyde, acetaldehyde or propionaldehyde under an acidic catalyst Ortho cresol novolac type epoxy resin etc.) obtained by condensation or co-condensation of the above-mentioned phenolic compound with an aromatic aldehyde compound such as benzaldehyde or salicylaldehyde under an acid catalyst Triphenylmethane-type epoxy resin which is obtained by epoxidizing triphenylmethane-type phenol resin; epoxidized novolac resin obtained by cocondensing the above-mentioned phenol compound and naphthol compound with an aldehyde compound under an acid catalyst Copolymer type epoxy resin which is a diglycidyl ether such as bisphenol A, bisphenol F, etc. diphenylmethane type epoxy resin; biphenyl type epoxy resin which is a diglycidyl ether of an alkyl-substituted or unsubstituted biphenol; diglycidyl of a stilbene type phenol compound Ethers: stilbene type epoxy resins; diglycidyl ethers such as bisphenol S: sulfur atom-containing epoxy resins; butanediol, polyethylene glycol, polypropylene glycol, etc. Epoxy resins which are glycidyl ethers of coals; glycidyl ester type epoxy resins which are glycidyl esters of polyvalent carboxylic acid compounds such as phthalic acid, isophthalic acid and tetrahydrophthalic acid; bonded to nitrogen atoms such as aniline, diaminodiphenylmethane and isocyanuric acid Glycidyl amine type epoxy resin which is obtained by substituting the active hydrogen with glycidyl group; dicyclopentadiene type epoxy resin which is obtained by epoxidizing a co-condensed resin of dicyclopentadiene and a phenol compound; epoxidized olefin bond in the molecule Vinylcyclohexene diepoxide, 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, 2- (3,4-epoxy) cyclohexyl-5,5-spiro (3,4 Epoxy) Alicyclic epoxy resin such as cyclohexane-m-dioxane; paraxylylene modified epoxy resin which is a glycidyl ether of paraxylylene modified phenolic resin; metaxylylene modified epoxy resin which is a glycidyl ether of metaxylylene modified phenolic resin; glycidyl ether of terpene modified phenolic resin Terpene-modified epoxy resin; dicyclopentadiene-modified epoxy resin which is a glycidyl ether of dicyclopentadiene-modified phenolic resin; cyclopentadiene-modified epoxy resin which is a glycidyl ether of cyclopentadiene-modified phenolic resin; glycidyl of polycyclic aromatic ring-modified phenolic resin Polycyclic aromatic ring-modified epoxy resin which is ether; naphtha which is glycidyl ether of naphthalene ring-containing phenolic resin Len type epoxy resin; halogenated phenol novolac type epoxy resin; hydroquinone type epoxy resin; trimethylolpropane type epoxy resin; linear aliphatic epoxy resin obtained by oxidizing olefin bond with peroxy acid such as peracetic acid; phenol aralkyl resin And an aralkyl type epoxy resin which is obtained by epoxidizing an aralkyl type phenol resin such as a naphthol aralkyl resin; Further, epoxy resin of silicone resin, epoxy resin of acrylic resin, etc. may be mentioned as epoxy resin. These epoxy resins may be used alone or in combination of two or more.

The epoxy equivalent (molecular weight / epoxy group number) of the epoxy resin is not particularly limited. From the viewpoint of the balance of various properties such as moldability, reflow resistance and electrical reliability, it is preferably 100 g / eq to 1000 g / eq, and more preferably 150 g / eq to 500 g / eq.

Let the epoxy equivalent of an epoxy resin be a value measured by the method according to JISK7236: 2009.

When the epoxy resin is solid, its softening point or melting point is not particularly limited. The temperature is preferably 40 ° C. to 180 ° C. from the viewpoint of moldability and reflow resistance, and more preferably 50 ° C. to 130 ° C. from the viewpoint of handleability at the time of preparation of the sealing resin composition.

The melting point of the epoxy resin is a value measured by differential scanning calorimetry (DSC), and the softening point of the epoxy resin is a value measured by a method (ring and ball method) according to JIS K 7234: 1986.

The content of the epoxy resin in the sealing resin composition is preferably 0.5% by mass to 50% by mass, and more preferably 2% by mass to 30% from the viewpoint of strength, fluidity, heat resistance, moldability, etc. More preferably, it is%.

(Hardening agent)
The sealing resin composition may contain a curing agent. The type of curing agent is not particularly limited, and examples thereof include phenol curing agents, amine curing agents, acid anhydride curing agents, polymercaptan curing agents, polyaminoamide curing agents, isocyanate curing agents, blocked isocyanate curing agents, and the like. From the viewpoint of improving heat resistance, those having two or more phenolic hydroxyl groups in one molecule (phenol curing agent) are preferable.

Specifically as phenolic curing agents, polyhydric phenol compounds such as resorcin, catechol, bisphenol A, bisphenol F, and substituted or unsubstituted biphenols; phenol, cresol, xylenol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol And at least one phenolic compound selected from the group consisting of phenol compounds such as aminophenol and naphthol compounds such as .alpha.-naphthol, .beta.-naphthol, dihydroxynaphthalene and aldehydes such as formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde and salicylaldehyde Novolak-type phenol resin obtained by condensation or co-condensation with a compound under acidic catalyst; the above-mentioned phenolic compound, dimethoxy para Aralkyl type phenol resin such as phenolaralkyl resin, naphtholaralkyl resin, etc. synthesized from xylene, bis (methoxymethyl) biphenyl etc .; phenolic resin modified with paraxylylene or metaxylylene; melamine modified phenolic resin; terpene modified phenolic resin; Dicyclopentadiene-type phenolic resin and dicyclopentadiene-type naphthol resin synthesized from the compound and dicyclopentadiene by copolymerization; cyclopentadiene-modified phenolic resin; polycyclic aromatic ring-modified phenolic resin; biphenyl-type phenolic resin; Triphenylmethane-type phenol obtained by condensation or co-condensation of a compound with an aromatic aldehyde compound such as benzaldehyde or salicylaldehyde under an acidic catalyst Fats; including these two or more phenolic resin obtained by co-polymerization. These phenol curing agents may be used alone or in combination of two or more.

The functional group equivalent of the curing agent (hydroxyl equivalent in the case of a phenol curing agent) is not particularly limited. From the viewpoint of the balance of various properties such as moldability, reflow resistance, electrical reliability, etc., 70 g / eq to 1000 g / eq is preferable, and 80 g / eq to 500 g / eq is more preferable.

The functional group equivalent of the curing agent (hydroxyl equivalent in the case of a phenol curing agent) is a value measured by a method according to JIS K 0070: 1992.

When the curing agent is solid, its softening point or melting point is not particularly limited. From the viewpoint of moldability and reflow resistance, the temperature is preferably 40 ° C. to 180 ° C., and from the viewpoint of handleability at the time of production of the sealing resin composition, it is more preferably 50 ° C. to 130 ° C. .

The melting point or softening point of the curing agent is a value measured in the same manner as the melting point or softening point of the epoxy resin.

The compounding ratio of the epoxy resin and the curing agent is not particularly limited. From the viewpoint of reducing the amount of each unreacted component, the ratio of the number of functional groups of the curing agent to the number of epoxy groups of the epoxy resin (number of epoxy groups of epoxy resin / number of functional groups of curing agent) is in the range of 0.5 to 2.0. It is preferable to set as such, it is more preferable to set it in the range of 0.6 to 1.3, and it is further preferable to set it in the range of 0.8 to 1.2.

(Hardening accelerator)
The sealing resin composition may contain a curing accelerator. The type of curing accelerator is not particularly limited, and can be selected according to the type of epoxy resin, the desired properties of the sealing resin composition, and the like.
As the curing accelerator, diazabicycloalkenes such as 1,5-diazabicyclo [4.3.0] nonene-5 (DBN), 1,8-diazabicyclo [5.4.0] undecene-7 (DBU), etc. Cyclic amidine compounds such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-heptadecylimidazole; derivatives of the cyclic amidine compounds; phenol novolac salts of the cyclic amidine compounds or derivatives thereof; Of maleic anhydride, 1,4-benzoquinone, 2,5-toluquinone, 1,4-naphthoquinone, 2,3-dimethylbenzoquinone, 2,6-dimethylbenzoquinone, 2,3-dimethoxy-5-methyl-1 , 4-benzoquinone, 2,3-dimethoxy-1,4-benzoquinone, phenyl-1, Compounds having an intramolecular polarization formed by addition of compounds having a π bond such as quinone compounds such as -benzoquinone and diazophenylmethane; tetraphenyl borate salts of DBU, tetraphenyl borate salts of DBN, 2-ethyl-4- Cyclic amidinium compounds such as methylimidazole tetraphenylborate salt, N-methylmorpholine tetraphenylborate salt, etc .; pyridine, triethylamine, triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris (dimethylaminomethyl) phenol etc. Derivatives of the above-mentioned tertiary amine compounds; tetra-n-butylammonium acetate, tetra-n-butylammonium phosphate, tetraethylammonium acetate, tetra-n-hexyl benzoate Ammonium salt compounds such as ammonium sulfate and tetrapropylammonium hydroxide; triphenylphosphine, diphenyl (p-tolyl) phosphine, tris (alkylphenyl) phosphine, tris (alkoxyphenyl) phosphine, tris (alkyl alkoxyphenyl) phosphine, tris (Dialkylphenyl) phosphine, tris (trialkylphenyl) phosphine, tris (tetraalkylphenyl) phosphine, tris (dialkoxyphenyl) phosphine, tris (trialkoxyphenyl) phosphine, tris (tetraalkoxyphenyl) phosphine, trialkylphosphine, Tertiary phosphines such as dialkyl aryl phosphines and alkyl diaryl phosphines; complexes of the above tertiary phosphines with organic borons, etc. Sphin compounds; said tertiary phosphine or said phosphine compound and maleic anhydride, 1,4-benzoquinone, 2,5-toluquinone, 1,4-naphthoquinone, 2,3-dimethylbenzoquinone, 2,6-dimethylbenzoquinone, 2, Quinone compounds such as 3-dimethoxy-5-methyl-1,4-benzoquinone, 2,3-dimethoxy-1,4-benzoquinone, phenyl-1,4-benzoquinone, and compounds having a π bond such as diazophenylmethane A compound having an intramolecular polarization formed by addition; said tertiary phosphine or said phosphine compound and 4-bromophenol, 3-bromophenol, 2-bromophenol, 4-chlorophenol, 3-chlorophenol, 2-chlorophenol, 4-iodophenol, 3-iodophenol, 2-iodophenol , 4-bromo-2-methylphenol, 4-bromo-3-methylphenol, 4-bromo-2,6-dimethylphenol, 4-bromo-3,5-dimethylphenol, 4-bromo-2,6 Halogenated phenolic compounds such as 4-di-tert-butylphenol, 4-chloro-1-naphthol, 1-bromo-2-naphthol, 6-bromo-2-naphthol, 4-bromo-4'-hydroxybiphenyl etc. Later, a compound having an internal polarization obtained through the step of dehydrohalogenation; tetra-substituted phosphonium such as tetraphenyl phosphonium; tetra-substituted phosphonium having no phenyl group bonded to a boron atom such as tetra-p-tolylborate Tetra-substituted borate; salts of tetraphenylphosphonium and phenol compounds, etc. Be

When the sealing resin composition contains a curing accelerator, the amount thereof is 0.1 parts by mass to 100 parts by mass of the resin component (the total of the epoxy resin and the curing agent contained as necessary, and the same applies hereinafter) The amount is preferably 30 parts by mass, and more preferably 1 part by mass to 15 parts by mass. If the amount of the curing accelerator is 0.1 parts by mass or more with respect to 100 parts by mass of the resin component, it tends to be cured well in a short time. If the amount of the curing accelerator is 30 parts by mass or less with respect to 100 parts by mass of the resin component, the curing rate tends to be too fast to obtain a good molded product.

(Inorganic filler)
The kind in particular of the inorganic filler contained in the resin composition for closure is not restricted. Specifically, fused silica, crystalline silica, glass, alumina, calcium carbonate, zirconium silicate, calcium silicate, silicon silicate, silicon nitride, aluminum nitride, boron nitride, beryllia, zirconia, zircon, fosterite, steatite, spinel, mullite And inorganic materials such as titania, talc, clay and mica. You may use the inorganic filler which has a flame-retardant effect. Examples of the inorganic filler having a flame retardant effect include composite metal hydroxides such as aluminum hydroxide, magnesium hydroxide, a composite hydroxide of magnesium and zinc, zinc borate and the like.

Among the inorganic fillers, silica such as fused silica is preferable from the viewpoint of reducing the linear expansion coefficient, and alumina is preferable from the viewpoint of high thermal conductivity. The inorganic filler may be used alone or in combination of two or more.

The content of the inorganic filler in the sealing resin composition is not particularly limited. From the viewpoint of flowability and strength, the content is preferably 30% by volume to 90% by volume, and more preferably 50% by volume to 85% by volume, of the entire sealing resin composition. If the content of the inorganic filler is 30% by volume or more of the whole resin composition for sealing, properties such as the thermal expansion coefficient, thermal conductivity, and elastic modulus of the cured product tend to be further improved. When the content of the inorganic filler is 90% by volume or less of the whole of the sealing resin composition, the increase in viscosity of the sealing resin composition is suppressed, the flowability is further improved, and the moldability is better. Tend to

When the inorganic filler is particulate, its average particle size is not particularly limited. For example, the volume average particle diameter of the entire inorganic filler is preferably 0.2 μm to 10 μm, and more preferably 0.5 μm to 5 μm. When the volume average particle diameter is 0.2 μm or more, the increase in the viscosity of the sealing resin composition tends to be further suppressed. When the volume average particle diameter is 10 μm or less, the filling property in the narrow gap tends to be further improved. The volume average particle diameter of the inorganic filler can be measured as a volume average particle diameter (D50) by a laser scattering diffraction particle size distribution measuring apparatus.

(Coupling agent)
The sealing resin composition may contain a coupling agent. Examples of the coupling agent include known coupling agents such as epoxysilane, mercaptosilane, aminosilane, alkylsilane, ureidosilane, silane compounds such as vinylsilane, titanium compounds, aluminum chelate compounds, and aluminum / zirconium compounds. .

When the sealing resin composition contains a coupling agent, the amount of the coupling agent is preferably 0.05 parts by mass to 5 parts by mass with respect to 100 parts by mass of the inorganic filler. It is more preferable that the amount is about 2.5 parts by mass. When the amount of the coupling agent is 0.05 parts by mass or more with respect to 100 parts by mass of the inorganic filler, adhesion to the frame tends to be further improved. When the amount of the coupling agent is 5 parts by mass or less with respect to 100 parts by mass of the inorganic filler, the moldability of the package tends to be further improved.

(Ion exchanger)
The sealing resin composition may contain an ion exchanger. In particular, when the sealing resin composition is used as the sealing molding material, the ion exchanger may be included from the viewpoint of improving the moisture resistance and the high-temperature standing characteristics of the electronic component device provided with the element to be sealed. preferable. The ion exchanger is not particularly limited, and conventionally known ones can be used. Specific examples thereof include hydrotalcite compounds and hydrous oxides of at least one element selected from the group consisting of magnesium, aluminum, titanium, zirconium and bismuth. The ion exchangers may be used alone or in combination of two or more. Among them, hydrotalcite represented by the following general formula (A) is preferable.

Mg _(1-X) Al _X (OH) ₂ (CO ₃ ) _{X / 2} · mH ₂ O ... (A)
(0 <X ≦ 0.5, m is a positive number)

When the sealing resin composition contains an ion exchanger, the content thereof is not particularly limited as long as it is an amount sufficient to capture ions such as halogen ions. For example, the amount is preferably 0.1 parts by mass to 30 parts by mass, and more preferably 1 part by mass to 5 parts by mass with respect to 100 parts by mass of the resin component.

(Release agent)
The sealing resin composition may contain a release agent from the viewpoint of obtaining good releasability with the mold at the time of molding. The release agent is not particularly limited, and conventionally known ones can be used. Specific examples thereof include carnauba wax, higher fatty acids such as montanic acid and stearic acid, higher fatty acid metal salts, ester waxes such as montanic acid esters, and polyolefin waxes such as oxidized polyethylene and non-oxidized polyethylene. The mold release agent may be used alone or in combination of two or more.

When the sealing resin composition contains a release agent, the amount is preferably 0.01 parts by mass to 10 parts by mass, and more preferably 0.1 parts by mass to 5 parts by mass with respect to 100 parts by mass of the resin component. When the amount of the release agent is 0.01 parts by mass or more based on 100 parts by mass of the resin component, the releasability tends to be sufficiently obtained. If the amount is 10 parts by mass or less, better adhesion tends to be obtained.

(Flame retardants)
The sealing resin composition may contain a flame retardant. The flame retardant is not particularly limited, and conventionally known flame retardants can be used. Specifically, organic or inorganic compounds containing a halogen atom, an antimony atom, a nitrogen atom or a phosphorus atom, metal hydroxides and the like can be mentioned. The flame retardant may be used alone or in combination of two or more.

When the sealing resin composition contains a flame retardant, the amount thereof is not particularly limited as long as it is an amount sufficient to obtain a desired flame retardant effect. For example, the amount is preferably 1 part by mass to 30 parts by mass, and more preferably 2 parts by mass to 15 parts by mass with respect to 100 parts by mass of the resin component.

(Colorant)
The sealing resin composition may further contain a colorant. Examples of colorants include known colorants such as carbon black, organic dyes, organic pigments, titanium oxide, red lead, red iron oxide and the like. The content of the coloring agent can be appropriately selected according to the purpose and the like. The colorants may be used alone or in combination of two or more.

(Stress relaxation agent)
The sealing resin composition may contain a stress relaxation agent such as silicone oil or silicone rubber particles. By including a stress relaxation agent, warpage of the package and occurrence of package cracks can be further reduced. The stress relieving agent includes known stress relieving agents (flexible agents) generally used. Specifically, thermoplastic elastomers such as silicone, styrene, olefin, urethane, polyester, polyether, polyamide, and polybutadiene, NR (natural rubber), NBR (acrylonitrile-butadiene rubber), acrylic Core particles such as rubber particles such as rubber, urethane rubber and silicone powder, methyl methacrylate-styrene-butadiene copolymer (MBS), methyl methacrylate-silicone copolymer and methyl methacrylate-butyl acrylate copolymer The rubber particle etc. which have a structure are mentioned. The stress relaxation agents may be used alone or in combination of two or more.

(Preparation method of sealing resin composition)
The method for preparing the sealing resin composition is not particularly limited. As a general method, there is a method in which components of a predetermined blending amount are sufficiently mixed by a mixer or the like, then melt-kneaded by a mixing roll, an extruder or the like, cooled, and crushed. More specifically, for example, a method of uniformly stirring and mixing predetermined amounts of the above-mentioned components, kneading with a kneader, roll, extruder or the like which has been heated to 70 ° C. to 140 ° C. in advance, cooling and crushing Can be mentioned.

The sealing resin composition is preferably solid at normal temperature and normal pressure (for example, 25 ° C. and atmospheric pressure). The shape in the case where the sealing resin composition is solid is not particularly limited, and examples thereof include powder, particles, and tablets.

<Method of producing sealing resin composition>
Method of manufacturing the encapsulating resin composition of the present disclosure includes a step of controlling so that the crosslink density in the cured state is 0.9 mol / cm ³ or less or where 1.0 mol / cm ³ or more .

How crosslink density of the sealing resin composition is controlled to be 0.9 mol / cm ³ or less or 1.0 mol / cm ³ or more is not particularly limited. For example, the crosslink density can be controlled to be in the above range by changing the type, the content, and the like of each component contained in the sealing resin composition.

According to the said method, the resin composition for sealing which can manufacture the semiconductor device which is excellent in electrical reliability can be manufactured.
The details and the preferred embodiment of the sealing resin composition produced by the above method are as described above as the details and the preferred embodiment of the sealing resin composition of the present disclosure.

(Use of sealing resin composition)
The use in particular of the sealing resin composition is not restrict | limited, It can use for various semiconductor devices. As described above, the sealing resin composition of the present disclosure is excellent in the electrical reliability when used under high voltage and large current conditions. For this reason, although it is used suitably especially for sealing of a power semiconductor element, you may use for sealing of the semiconductor element used for a calculation, a memory, etc.

<Semiconductor device>
A semiconductor device of the present disclosure includes a support, a semiconductor element disposed on the support, and a cured product of the above-described sealing resin composition sealing the semiconductor element.

The type of support and semiconductor element used for the semiconductor device is not particularly limited, and those generally used for manufacturing the semiconductor device can be used. The semiconductor device of the present disclosure is excellent in electrical reliability when used under high voltage and large current conditions by using the above-described sealing resin composition for sealing a semiconductor element. Therefore, although it is particularly suitably used as a power semiconductor device, it may be a semiconductor device used for calculation, storage and the like.

<Method of Manufacturing Semiconductor Device>
The method of manufacturing a semiconductor device of the present disclosure includes the steps of: arranging a semiconductor element on a support; and sealing the semiconductor element with the sealing resin composition described above.

The method for carrying out each of the above steps is not particularly limited, and can be carried out by a general method. Further, the types of the support and the semiconductor element used in the manufacture of the semiconductor device are not particularly limited, and those generally used in the manufacture of the semiconductor device can be used. The manufacturing method of the semiconductor device of this indication manufactures the semiconductor device which is excellent in the electric reliability at the time of using on high voltage and a large electric current condition by using the resin composition for sealing mentioned above for sealing of a semiconductor element. it can. Therefore, the method is particularly suitable as a method of manufacturing a power semiconductor device, but it may be a method of manufacturing a semiconductor device used for calculation, storage, and the like.

Hereinafter, although the embodiment mentioned above is concretely described by an example, the scope of the present disclosure is not limited to these examples. In addition, unless there is particular notice, "part" and "%" are mass references.

First Embodiment
(Preparation of resin composition for sealing)
The following components were compounded in amounts shown in Table 1 (unit: mass part), roll kneading was carried out under conditions of kneading temperature 100 ° C., kneading time 10 minutes, and a sealing resin composition was prepared.

The details of each material described in the table are as follows.
Epoxy resin: A biphenylene skeleton-containing phenol aralkyl type epoxy resin having an epoxy equivalent of 241 and a softening point of 96 ° C. (Nippon Kayaku Co., Ltd., trade name CER-3000 L)
Curing agent: xylylene type phenol resin having a hydroxyl equivalent of 175 and a softening point of 70 ° C. (Meiwa Chemical Co., Ltd., trade name MEHC-7800 SS)
Hardening accelerator: Betaine-type adduct of triphenylphosphine and 1,4-benzoquinone
· Inorganic filler 1 ... spherical fused silica with an average particle diameter of 24.3 μm and a specific surface area of 2.86 m ² / g · inorganic filler 2 ... a spherical fused silica with an average particle shape of 0.13 μm and a specific surface area of 7.00 m ² / g・ Silane coupling agent ... γ-Glycidoxypropyltrimethoxysilane

(Measurement of dielectric relaxation value)
The prepared resin composition for sealing was cured to prepare a test piece for evaluation of dielectric relaxation value. Specifically, a molding resin composition is molded using a transfer molding machine under conditions of a mold temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 120 seconds, and then cured for 5 hours at 175 ° C. went. The size of the test piece was a disc having a diameter of 50 mm and a thickness of 1 mm.

The dielectric relaxation value was measured about the produced test piece. The measurement was performed using a dielectric relaxation measurement device comprising a combination of an impedance measurement device having a dielectric constant measurement interface as shown in FIG. 1 and a dynamic viscoelasticity measurement device. In FIG. 1, 1a indicates a dielectric constant measurement interface, 1b indicates an impedance measurement device, 2 indicates a dynamic viscoelasticity measurement device, and 2a indicates a measurement electrode. That is, in this dielectric relaxation measuring apparatus, the interface 1a for dielectric constant measurement connected and disposed on the impedance measuring apparatus 1b is connected to the dynamic viscoelasticity measuring apparatus 2, and measurement is performed on the dynamic viscoelasticity measuring apparatus 2 The electrode 2a is attached. Then, a sample to be measured is held between the measurement electrodes 2a to perform measurement.

As the interface 1a for permittivity measurement, a 1296 type permittivity measurement interface manufactured by Solartron, UK is used, and as the impedance measurement device 1b, a 1255B type impedance analyzer manufactured by Solartron, UK is used, and a dynamic viscoelasticity measuring device As (2), RSA manufactured by TA Instruments was used.
The measurement was performed to the low dielectric side (frequency: 0.0001 to 0.00001 Hz) according to the time-temperature conversion rule (WLF formula), and the final reaching dielectric constant was measured.

The relationship between the specific surface area of the inorganic filler and the dielectric relaxation value is shown in FIG. FIG. 2 is a scatter diagram in which the specific surface area (surface area per g, m ² ) of the inorganic filler contained in each sample is taken as the X coordinate and the dielectric relaxation value is taken as the Y coordinate. As shown in FIG. 2, a positive correlation was recognized between the specific surface area of the inorganic filler and the dielectric relaxation value measured at a frequency of 0.001 Hz.

Second Embodiment
The following components were compounded in amounts shown in Table 2 (unit: parts by mass), roll kneading was carried out under conditions of kneading temperature 100 ° C., kneading time 10 minutes, and a sealing resin composition was prepared.

The details of each component shown in the table are as follows.
Epoxy resin: A biphenylene skeleton-containing phenol aralkyl type epoxy resin having an epoxy equivalent of 241 and a softening point of 96 ° C. (Nippon Kayaku Co., Ltd., trade name CER-3000 L)
Curing agent: xylylene type phenol resin having a hydroxyl equivalent of 175 and a softening point of 70 ° C. (Meiwa Chemical Co., Ltd., trade name MEHC-7800 SS)
-Curing accelerator-Betaine type adduct of triphenylphosphine and 1,4-benzoquinone-Silane coupling agent 1-3-Mercaptopropyltrimethoxysilane-Silane coupling agent 2-3-Aminopropyltriethoxysilane-Silane Coupling agent 3 ... methyltrimethoxysilane · silane coupling agent 4 ... N-phenyl 3-aminopropyltrimethoxysilane · silane coupling agent 5 ... 3-glycidoxypropyltrimethoxysilane · coloring agent ... carbon black · Inorganic filler 1. Spherical fused silica with an average particle diameter of 24.3 μm and a specific surface area of 2.86 m ² / g Inorganic filler 2. Spherical fused silica with an average particle shape of 0.13 μm and a specific surface area of 7.00 m ² / g

Test pieces were produced in the same manner as in the first embodiment using the prepared resin composition for sealing, and the dielectric relaxation value was measured. The results are shown in Table 2.

As shown in Table 2, the sealing resin composition of the example using a silane coupling agent having -NH ₂ or -SH as a coupling agent used a silane coupling agent having another functional group. The dielectric relaxation value at 0.001 Hz was smaller than that of the sealing resin composition of the comparative example.

Third Embodiment
The following components were compounded in amounts shown in Table 3 (unit: parts by mass), roll kneading was performed under the conditions of a kneading temperature of 100 ° C. and a kneading time of 10 minutes to prepare a sealing resin composition.

The details of each component shown in the table are as follows.
Epoxy resin A: tetramethyl biphenol type solid epoxy resin (YX-4000H, Mitsubishi Chemical Corporation)
・ Epoxy resin B ... α-2,3-epoxy proxylphenyl-ω-hydropoly (n = 1-7) [2- (2,3-epoxypropoxy) benzylidene-2,3-epoxypropoxyphenylene (EPPN-501HY , Nippon Kayaku Co., Ltd.)
Epoxy resin C: Biphenyl novolac epoxy resin (NC-3000, Nippon Kayaku Co., Ltd.)
Epoxy resin D: O-cresol novolac glycidyl ether (N500P, DIC Corporation)
Epoxy resin E: Naphthalene-modified novolac epoxy resin having a softening point of 58 ° C. (HP-5000, DIC Corporation)
· Epoxy resin F: DCPD type epoxy resin (HP-7200, DIC Corporation)
· Epoxy resin G: Epoxy resin with a melting point of 107 ° C (EXA-5300, DIC Corporation)
・ Epoxy resin H: Dicyclopentadiene-dimethylol diglycyl ether (EP-HA01, ADEKA Co., Ltd.)
Hardener a: Phenolic resin (MEW-1800, Meiwa Kasei Co., Ltd.)
Hardener b: Polycondensate of phenol and p-xylene glycol dimethyl ether (MEH-7800, Meiwa Kasei Co., Ltd.)
Hardening accelerator: Betaine-type adduct of triphenylphosphine and 1,4-benzoquinone Coupling agent: 3- (phenylamino) propyltrimethoxysilane (KBM-573, Shin-Etsu Chemical Co., Ltd.)
Carbon: carbon black (MA-600, Mitsubishi Chemical Corporation)
· Inorganic filler ... Amorphous silicon dioxide (containing less than 5% of crystalline material) (FB-9454, Denka Co., Ltd.)

Test pieces were produced in the same manner as in the first embodiment using the prepared resin composition for sealing, and the dielectric relaxation value was measured. Furthermore, using the dynamic storage elastic modulus of the rubber region obtained by the dynamic viscoelasticity measurement device, the value calculated according to the following equation was taken as the crosslink density. In this example, RSA 3 manufactured by TA Instruments was used as a measurement device.
Formula: n = E '/ 3 RT
n: Crosslink density [mol / cm ³ ]
E ': dynamic storage elastic modulus [Pa]
R: Gas constant 8.31 [J / mol · K]
T: Absolute temperature [K]

The relationship between the crosslink density of the sealing resin composition and the dielectric relaxation value measured at a frequency of 0.001 Hz is shown in FIG. FIG. 3 is a scatter diagram in which the crosslink density (mol / cm ³ ) of the sealing resin composition is taken as the X coordinate, and the dielectric relaxation value measured at a frequency of 0.001 Hz is shown as the Y coordinate.

As shown in FIG. 3, when the crosslinking density of the sealing resin composition is 0.9 mol / cm ³ or less, a positive correlation is recognized between the crosslinking density and the dielectric relaxation value measured at a frequency of 0.001 Hz. It was done. Further, when the crosslink density of the sealing resin composition was 1.0 mol / cm ³ or more, a negative correlation was recognized between the crosslink density and the dielectric relaxation value measured at a frequency of 0.001 Hz.
Further, the crosslinking density of the sealing resin composition is dielectric relaxation values measured at frequencies 0.001Hz when it 0.9 mol / cm ³ or less or 1.0 mol / cm ³ or more was 20 or less.

<Reference example>
In order to investigate the relationship between the dielectric relaxation value measured at a frequency of 0.001 Hz with the resin composition for sealing cured and the electrical reliability of the semiconductor device manufactured using the resin composition for sealing, the following test Carried out.

(Preparation of resin composition for sealing)
The components shown below were blended at blending ratios (parts by mass) shown in Table 4, and roll kneading was performed under conditions of a kneading temperature of 80 ° C. and a kneading time of 10 minutes to prepare a sealing resin composition.

 

The details of each component shown in the table are as follows.
Epoxy resin A: polycondensate of α-hydroxyphenyl-ω-hydropoly (n = 1 to 7) (biphenyl dimethylene-hydroxyphenylene) with 1-chloro-2,3-epoxypropane (CER-3000 L, Japan Kayaku Co., Ltd.)
Epoxy resin B: reaction product of 2,2'-dimethyl-4,4'-dihydroxy-5,5'-di-tert-butyldiphenyl sulfide and chloromethyl oxirane (YSLV-120TE, Nippon Steel Sumikin Chemical Co., Ltd. )
Epoxy resin C: tetramethyl biphenol type solid epoxy resin (YX-4000, Mitsubishi Chemical Corporation)
· Epoxy resin D: mixture of α solid epoxy resin and 4,4'-biphenol type epoxy resin (YX-7399, Mitsubishi Chemical Corporation)
Hardener: Polycondensate of phenol and p-xylene glycol dimethyl ether (MEH-7800, Meiwa Kasei Co., Ltd.)
· Curing agent accelerator a '-... Triparatryl phosphine and 1,4-benzoquinone adduct · Curing agent accelerator b' ... Triphenyl phosphine and 1,4-benzoquinone adduct · Coupling agent a ... 3- (phenylamino) Propyltrimethoxysilane (KBM-573, Shin-Etsu Chemical Co., Ltd.)
・ Coupling agent b ... Methyltrimethoxysilane (KBM-13, Shin-Etsu Chemical Co., Ltd.)
・ Coupling agent c ... 3-glycidyloxypropyltrimethoxysilane (KBM-403, Shin-Etsu Chemical Co., Ltd.)
Coupling agent d: Diphenyldimethoxysilane (KBM-202SS, Shin-Etsu Chemical Co., Ltd.)
· Inorganic filler ... Amorphous silicon dioxide (containing less than 5% of crystalline material) (FB-9454, Denka Co., Ltd.)

(Measurement of dielectric relaxation value)
The dielectric relaxation value was measured in the same manner as in the first embodiment using the prepared sealing resin composition. The measurement was performed at a frequency of 0.001 Hz and a frequency of 1 MHz, respectively.

(High temperature reverse bias test)
A diode was die-bonded to a discrete package (TO-247) using a solder, and an Al wire was further bonded, and then sealed with a sealing resin composition to prepare an evaluation package. This package was placed in a high-temperature dryer, and a voltage was applied in consideration of the package thermal capacity obtained by the transient thermal analyzer (T3Ster). In this reference example, the temperature in the high-temperature dryer was 170 ° C., and the voltage was 1280 V. The package was left in a high-temperature dryer for 1000 hours with a voltage applied, and then removed. The leak current was measured using a Curve Tracer (CS-3200) manufactured by Iwasaki Communication Co., Ltd.

The measured dielectric relaxation values and the results of the high temperature reverse bias test are shown in Table 4, FIG. 4 and FIG.
FIG. 4 shows the leakage current in the high temperature reverse bias test with the measured value of the dielectric relaxation value (frequency 0.001 Hz) performed on a sample prepared from the sealing resin composition of Reference Examples 1 to 5 as the X coordinate. It is a scatter diagram which showed (micro | micron | mu) A as Y coordinate.
FIG. 5 shows measured values of dielectric relaxation value (frequency 1 MHz) of samples prepared from the sealing resin compositions of Reference Examples 2 to 5 as X coordinates, and leakage current (μA) in the high temperature reverse bias test. Is a scatter diagram showing Y as a Y coordinate.

As shown in FIG. 4, a positive correlation was recognized between the dielectric relaxation value measured at a frequency of 0.001 Hz and the leakage current (μA) in the high temperature reverse bias test.
Also, when the dielectric relaxation value measured at a frequency of 0.001 Hz was 20 or less, the result of the high temperature reverse bias test was good.

As shown in FIG. 5, no correlation was found between the dielectric relaxation value measured at a frequency of 1 MHz and the leakage current (μA) in the high temperature reverse bias test.

As mentioned above, according to the resin composition for sealing of this indication, it turned out that the semiconductor device which is excellent in electric reliability is producible.

The disclosures of Japanese patent applications 2017-156441, 2017-156442 and 2017-156443 are incorporated herein by reference in their entirety.
All documents, patent applications, and technical standards described herein are as specific and individually as individual documents, patent applications, and technical standards are incorporated by reference. Hereby incorporated by reference.

Claims (11)

1. The sealing resin composition which contains an epoxy resin and an inorganic filler and whose specific surface area of the said inorganic filler is 3.28 m < ² > / g or less.
2. The sealing resin composition according to claim 1, wherein a dielectric relaxation value measured at a frequency of 0.001 Hz in a cured state is 20 or less.
3. A sealing resin composition comprising an epoxy resin, an inorganic filler, and a silane coupling agent having -NH ₂ or -SH.
4. The sealing resin composition according to claim 3, wherein a dielectric relaxation value measured at a frequency of 0.001 Hz in a cured state is 13 or less.
5. An epoxy resin, containing an inorganic filler, or crosslink density in the cured state is 0.9 mol / cm ³ or less, or 1.0 mol / cm ³ or more, the sealing resin composition.
6. The sealing resin composition according to claim 5, wherein a dielectric relaxation value measured at a frequency of 0.001 Hz in a cured state is 20 or less.
7. The sealing resin composition according to any one of claims 1 to 6, which is used for sealing a power semiconductor element.
8. The sealing resin composition according to any one of claims 1 to 7, wherein a content of the inorganic filler is 70% by volume or more of the sealing resin composition.
9. Or crosslink density in the cured state is 0.9 mol / cm ³ or less, or 1.0 mol / cm comprising ³ the steps of controlling so that the above, in any one of claims 1 to 8 The manufacturing method of the resin composition for sealing as described.
10. 9. A cured product of a sealing resin composition according to any one of claims 1 to 8, which encapsulates a support, a semiconductor element disposed on the support, and the semiconductor element. And a semiconductor device.
11. A semiconductor device comprising: a step of disposing a semiconductor element on a support; and a step of sealing the semiconductor element with the sealing resin composition according to any one of claims 1 to 8. Method.

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