WO2019034505A1 - Circuit d'activation d'un transistor de puissance à semi-conducteur - Google Patents

Circuit d'activation d'un transistor de puissance à semi-conducteur Download PDF

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Publication number
WO2019034505A1
WO2019034505A1 PCT/EP2018/071579 EP2018071579W WO2019034505A1 WO 2019034505 A1 WO2019034505 A1 WO 2019034505A1 EP 2018071579 W EP2018071579 W EP 2018071579W WO 2019034505 A1 WO2019034505 A1 WO 2019034505A1
Authority
WO
WIPO (PCT)
Prior art keywords
power semiconductor
circuit
semiconductor transistor
gate
current
Prior art date
Application number
PCT/EP2018/071579
Other languages
German (de)
English (en)
Inventor
Falko Friese
Peter Sinn
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2019034505A1 publication Critical patent/WO2019034505A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch

Definitions

  • Gate drive in particular so-called insulated gate bipolar transistors [IGBTs] and metal oxide semiconductor field effect transistors [MOSFETs] and other corresponding transistors
  • IGBTs insulated gate bipolar transistors
  • MOSFETs metal oxide semiconductor field effect transistors
  • Such push-pull output stages are usually connected to the control electrodes of the power semiconductor transistor.
  • the control electrodes are the gate and the emitter (also called source).
  • the Gegentaktendrun usually forms a circuit which is connected between a driver for driving the power semiconductor transistor and the
  • Power semiconductor transistor itself is arranged to be made of a
  • Driving signal of the driver to form a control voltage for driving the gate of the power semiconductor transistor.
  • Input voltage (eg -8 volts to turn off) can be switched.
  • the load current of the power semiconductor transistor can be measured and taken into account by the driver for driving the power semiconductor transistor.
  • the driver is set up so that it detects a short circuit based on the measured load current and a suitable one
  • Short-circuit shutdown initiates, if the load current exceeds a previously selected fixed threshold.
  • the load current is frequently set to a threshold which is twice to three times the highest expected regular operating current.
  • Operating current is here meant a current that can occur during normal operation of the power semiconductor transistor maximum.
  • the choice of the control voltage of the power semiconductor in the on state is subject to a conflict of goals.
  • the higher the control voltage is selected the lower the collector-emitter voltage (between the collector and the emitter of the power semiconductor transistor).
  • This collector-emitter voltage leads to a power loss in the power semiconductor transistor in the on state. Accordingly, power losses in the power semiconductor transistor (also called forward losses) can be reduced during normal operation of the power semiconductor transistor due to a high control voltage. This is desirable.
  • increases by a higher control voltage of the desaturation of the power semiconductor transistor increases the maximum short-circuit current that can occur. Ultimately, this leads to an increased load of the power semiconductor in the event of a short circuit. This is undesirable because the short-circuit protection should be designed so that the power semiconductor transistor should not be damaged by a short-circuit current occurring.
  • Described here are a circuit and an operating method for such a circuit with which the short-circuit current is limited, without increasing the forward losses of the power semiconductor during normal operation. This is achieved by a circuit for controlling a
  • Power semiconductor transistor comprising a drive stage, which for driving the gate of the power semiconductor transistor with a
  • Control voltage is set up and is connected to the gate and the emitter of the power semiconductor transistor, further comprising a
  • Protection circuit which is also adapted to drive the gate and is connected to the gate and the emitter of the power semiconductor transistor, and connected to the emitter of the power semiconductor transistor current sensor for determining a load current through the power semiconductor transistor, wherein an output of the current sensor of
  • Protection circuit is provided and the protection circuit is adapted to lower the control voltage at the gate when a load current through the power semiconductor transistor is greater than one
  • the circuit forms an intermediate assembly between a driver for operating a power semiconductor transistor and the
  • the circuit preferably has signal inputs to the input of signals from the driver and outputs for connecting the circuit to the power semiconductor transistor.
  • the circuit individually but also together with the
  • the power semiconductor transistor has a conventional structure with a gate (for applying a control voltage with which the power semiconductor transistor can be switched), an emitter and a collector.
  • the emitter is usually connected to a ground potential.
  • the emitter and the collector together also form the connections for the drive stage.
  • the drive stage and the protection circuit are connected in parallel between the emitter and the gate and thus can equally (both) influence the control voltage applied to the gate.
  • the protection circuit is configured to adapt the control voltage applied to the gate on the basis of the control voltage predetermined by the drive stage so as to influence the permeability of the power semiconductor transistor.
  • a current sensor Series with the power semiconductor transistor is arranged (preferably between the emitter and the reference potential, a current sensor, which by the Power semiconductor transistor can completely monitor current flowing.
  • the current sensor has an output. At this output, a signal is available which includes information about the load current flowing through the power semiconductor transistor. This output or the signal available at this output is provided to the protection circuit.
  • Protection circuitry is configured to lower the control voltage at the gate when a load current is greater than a threshold current.
  • control voltage can be largely independent of the requirements for the
  • the short-circuit current limit is now independent of the choice of control voltage through the additional
  • the protection circuit may also be referred to as a "clamping circuit.”
  • the protection circuit is the crucial element of the solution described here.
  • the current sensor serves the purpose of determining a load current applied to the power semiconductor transistor.
  • the current sensor can use any principle for determining a load current.
  • Power semiconductor transistor and the driver to certain input signals are detected.
  • this can be voltages to the Control electrodes are measured with increasing load current of the power semiconductor.
  • the protective circuit is set up so that it has no effects on the emitter and the gate of the power semiconductor transistor, provided that a load current measured by the current sensor is smaller than one
  • the protection circuit behaves at load currents below the threshold current preferred as a very high resistance, the behavior of the
  • the protective circuit has a transistor with which the control voltage at the gate can be reduced in dependence on a current measured by the current sensor.
  • a transistor in the protection circuit is preferably configured to establish a connection to a reference potential, via which the control voltage at the gate can be reduced.
  • the gate of this transistor is preferably via a circuit or via a logic with the current sensor or the output of
  • the power semiconductor transistor is an insulated gate bipolar transistor (IGBT).
  • IGBT insulated gate bipolar transistor
  • Insulated gate bipolar transistors are particularly suitable for switching high currents and are used, for example, in B-6 bridges in a motor vehicle with an electric drive to supply direct currents from an accumulator in
  • alternating currents in particular polyphase alternating currents
  • alternating currents in particular polyphase alternating currents
  • Polyphase AC currents from a charging infrastructure or a generator into DC currents for an accumulator.
  • the circuit described herein is also applicable when the power semiconductor transistor is a metal oxide field effect transistor (MOFSET) or any other voltage controlled transistor. Also particularly advantageous is when the drive stage in the manner of a
  • Push-pull output stage is designed, with which a control voltage between an upper input voltage and a lower input voltage for driving the gate can be provided.
  • a push-pull output stage makes it possible to
  • Push-pull output is often referred to as a "push-pull stage.”
  • a push-pull output is characterized in particular by the fact that they are low
  • the circuit also has a signal input, to which a driver module for driving the power semiconductor transistor can be connected via the circuit.
  • the circuit preferably has a signal output to which a
  • Driver module for driving the power semiconductor transistor can be connected via the circuit.
  • the signal input and the signal output can each transitions or
  • the signal input and the signal output respectively to comprise changeable connection points (for example plug-in connections) with which a connection of the circuit to different drivers is possible.
  • the protection circuit is preferably configured to determine whether there is a transient transient current or an increased load current and to trigger a lowering of the control voltage at the gate only when there is an increased load current.
  • any conceivable logic can be provided in the protection circuit which takes into account not only the magnitude of the current (measured by the current sensor) by the power semiconductor transistor, but additionally information from the course of the current (in particular from the course of the current increase, angle of the rising edge etc.).
  • any logic serving the purpose can be implemented from the available information with regard to the current through the power semiconductor transistor available at the output of the current sensor, to initiate appropriate measures for influencing the control voltage.
  • the protection circuit or the logic implemented in the protection circuit can also take into account further information or signal inputs in influencing the control voltage.
  • the circuit described can be used to control various aspects of the circuit described
  • the described circuit can, for. B.
  • inverters can also be used with inverters, DCDC converters, solid state relays, etc.
  • FIG. 2 a circuit described
  • FIG. 3 a time profile of gate voltage and load current of a
  • Fig. 1 shows a typical characteristic diagram of a power semiconductor transistor of the type of insulated gate bipolar transistor (IGBT).
  • the product of Ic and UCE represents the power loss experienced by the load current transmitted by the power semiconductor transistor.
  • Power semiconductor transistor can flow. The power loss of
  • Gate voltage UGE lower. Marked in the characteristic field are a desaturated region 22 and a saturated region 23, which are separated from a boundary line 21.
  • the current Ic is independent of a current IB flowing through the gate to the emitter, which is also called a base current.
  • the current Ic is proportional to the current IB flowing to the emitter via the gate. In the desaturated area is the
  • FIG. 2 schematically shows a circuit 1 described here, which is arranged between a driver module 14 for driving a power semiconductor transistor 2 and the power semiconductor transistor 2.
  • the circuit 2 comprises the drive circuit 3, which is designed here as a push-pull output stage and from a passing via a signal input 13 in the circuit 1
  • Input signal generates a control voltage 12 for the gate 4, which is between an upper input voltage 10 and a lower input voltage 11.
  • the power semiconductor transistor 2 has a gate 4, an emitter 5, and a collector 9.
  • the output of the drive stage 3 is connected to the gate 4 and configured to provide a voltage across the emitter 5 at the gate 4.
  • the emitter 5 is connected here to a ground potential 30.
  • Parallel to the drive stage 3, the protection circuit 6 is connected between the gate 4 and the emitter 5, which is set up to influence the control voltage 12 at the gate 4.
  • Power semiconductor transistor 2 is a current sensor 7 is connected, which has an output 8, to which a signal is available, which is representative of the current flowing through the power semiconductor transistor 2 current.
  • Protection circuit is adapted to take into account when influencing the control voltage 12, this signal from the current sensor 7.
  • the circuit 1 preferably has a signal input 13 via which the driver module 14 can pass signals for driving the power semiconductor transistor 2 to the circuit 1.
  • the driver module 14 preferably also has a signal input 15, via which signals from the circuit 1 can be transmitted back to the driver module 14.
  • signals may be representative of the operating state of the power semiconductor transistor 2.
  • a signal from the current sensor 7 (with a
  • FIG. 3 shows a time profile of currents and voltages in a described circuit 1 with a power semiconductor transistor 2.
  • a gate voltage curve and a load current profile are shown as they are in the control of a power semiconductor transistor with the here
  • a gate voltage waveform and a load current waveform are shown, as they set in a drive of a power semiconductor transistor without such a circuit.
  • the upper diagram shows, over the time axis 16 common to the two diagrams, 16 current curves 17.
  • the lower diagram shows 16 voltage curves 24 over the time axis.
  • a short circuit 25 is noted on the time axis.
  • the current profile with protection circuit 27 is reduced by the current reduction 31 compared with the current profile without protection circuit 26.
  • the short-circuit current is reduced here. This is achieved by the voltage curve with
  • Protective circuit 29 against the voltage curve without protection circuit 28 is reduced by the voltage reduction 32 in the event of a short circuit.
  • a lower saturation current is established in the diagram according to FIG. 1 and the short-circuit current is reduced (see upper diagram in FIG. 3).

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  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

L'invention concerne un circuit (1) d'activation d'un transistor de puissance à semi-conducteur (2), présentant un étage d'activation (3) qui est conçu pour l'activation de la grille (4) du transistor de puissance à semi-conducteur (2) incluant une tension de commande (12) et qui est à cet effet raccordé à la grille (4) et à l'émetteur (5) du transistor de puissance à semi-conducteur (2), et présentant par ailleurs un circuit de protection (6) qui est également conçu pour l'activation de la grille (4) et qui est à cet effet raccordé à la grille (4) et à l'émetteur (5), ainsi qu'un capteur de courant (7) raccordé à l'émetteur (5) du transistor de puissance à semi-conducteur (2) et permettant de déterminer un courant de charge, une sortie (8) du capteur de courant (7) étant fournie au circuit de protection (6), et le circuit de protection (6) étant conçu pour abaisser la tension de commande au niveau de la grille (4) si un courant de charge dépasse une valeur seuil de courant.
PCT/EP2018/071579 2017-08-15 2018-08-09 Circuit d'activation d'un transistor de puissance à semi-conducteur WO2019034505A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017214211.1 2017-08-15
DE102017214211.1A DE102017214211A1 (de) 2017-08-15 2017-08-15 Schaltung zur Ansteuerung eines Leistungshalbleitertransistors

Publications (1)

Publication Number Publication Date
WO2019034505A1 true WO2019034505A1 (fr) 2019-02-21

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PCT/EP2018/071579 WO2019034505A1 (fr) 2017-08-15 2018-08-09 Circuit d'activation d'un transistor de puissance à semi-conducteur

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DE (1) DE102017214211A1 (fr)
WO (1) WO2019034505A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0730347A2 (fr) * 1992-03-18 1996-09-04 Fuji Electric Co., Ltd. Dispositif semi-conducteur
US7463469B2 (en) * 2006-02-02 2008-12-09 Texas Instruments Incorporated System and method for current overload response with class D topology
EP2560283A1 (fr) * 2010-04-14 2013-02-20 Honda Motor Co., Ltd. Procédé de protection contre les courts-circuits
DE112013004659B4 (de) * 2012-09-24 2016-11-03 Toyota Jidosha Kabushiki Kaisha Halbleiteransteuerungsvorrichtung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0730347A2 (fr) * 1992-03-18 1996-09-04 Fuji Electric Co., Ltd. Dispositif semi-conducteur
US7463469B2 (en) * 2006-02-02 2008-12-09 Texas Instruments Incorporated System and method for current overload response with class D topology
EP2560283A1 (fr) * 2010-04-14 2013-02-20 Honda Motor Co., Ltd. Procédé de protection contre les courts-circuits
DE112013004659B4 (de) * 2012-09-24 2016-11-03 Toyota Jidosha Kabushiki Kaisha Halbleiteransteuerungsvorrichtung

Also Published As

Publication number Publication date
DE102017214211A1 (de) 2019-02-21

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