WO2019033535A1 - 一种蒸镀机台装置 - Google Patents

一种蒸镀机台装置 Download PDF

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Publication number
WO2019033535A1
WO2019033535A1 PCT/CN2017/106788 CN2017106788W WO2019033535A1 WO 2019033535 A1 WO2019033535 A1 WO 2019033535A1 CN 2017106788 W CN2017106788 W CN 2017106788W WO 2019033535 A1 WO2019033535 A1 WO 2019033535A1
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WIPO (PCT)
Prior art keywords
chamber
vacuum
atmospheric pressure
cavity
sub
Prior art date
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Ceased
Application number
PCT/CN2017/106788
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English (en)
French (fr)
Inventor
蒋谦
陈永胜
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US15/579,625 priority Critical patent/US20190055641A1/en
Publication of WO2019033535A1 publication Critical patent/WO2019033535A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Definitions

  • the present invention relates to a manufacturing process apparatus, and more particularly to an evaporation machine apparatus.
  • OLED Organic Light Emitting Diode
  • LCD Organic Light Emitting Diode
  • PDP plasma
  • Coating technology can be roughly divided into physical vapor deposition and chemical vapor deposition.
  • the former mainly performs film deposition by physical phenomena, while the latter mainly performs film deposition by means of chemical reaction.
  • physical vapor deposition is more vapor deposited ( Evaporation ) and sputtering ) is the current mainstream.
  • What these two technologies have in common is the deposition of thin films in the form of physical phenomena.
  • the principle is generally to deposit a film by heating the object to be vapor-deposited and using the saturated vapor pressure of the vapor-deposited material at a high temperature (close to its melting point).
  • the vapor deposition technique is widely used, and an organic electroluminescence element which is one of the mainstream of display elements can be used to form an organic layer by an evaporation technique.
  • the current vapor deposition technology still has problems in that it is difficult to produce a large-area element, the material is easily deteriorated by high temperature, the thickness of the vapor deposition film is uneven, and the material utilization rate is low.
  • OLED film is prepared by vacuum evaporation, and heated in a vacuum environment / A metal material, which is sublimated by heat, forms a patterned organic/metal film on the surface of the substrate through a patterned metal mask.
  • OLEDs with multilayer films can be formed by continuous deposition of a variety of materials Structure.
  • Machine maintenance including filler material, anti-board replacement, replacement of crystal oscillator, etc.
  • jobs 3 and 5 after setting the process menu, the machine can be executed automatically; but jobs 1 , 2 and 4 Manual work is required for the operator to participate. Efficient operation (manufacturing device and product operation) and other operations of the vapor deposition machine production line (1, 2, 4 above) ) conflict, the longer the other work time, the shorter the effective work time.
  • the vacuum evaporation step requires the use of an Array process substrate, and the surface of the Array substrate is exposed to red (R ), the green (G), blue (B) sub-pixel corresponding to the anode pattern, and an insulating layer exists between each sub-pixel and the immediately adjacent sub-pixel;
  • a precision mask is required to deposit the luminescent layer of the OLED, typically red (R), green (G), and blue (B) sub-pixels, each One precision mask is required for one sub-pixel.
  • the precision mask compensation debugging operation can be such that after the fine mask is evaporated into a film, the position of the film formation pattern covers the anode of the sub-pixel, and the anode is located at the center of the film formation pattern. Avoid color mixing effects.
  • the existing method of compensating the debugging operation of the precision mask has the following three shortcomings:
  • the above metal mask compensation method occupies the coating chamber of the evaporation device, and usually each of the evaporation devices has 3-5 A fine pattern is formed into a film cavity, and the metal mask is debugged by the above compensation method, so that the vacuum evaporation whole line cannot perform normal product operation, and the machine must wait for the metal mask to be debugged before the normal product manufacturing operation can be started;
  • the above metal mask compensation method must use an evaporation film-forming material (usually an organic material), and each mask must be debugged.
  • evaporation film-forming material usually an organic material
  • each mask must be debugged.
  • the substrate can be debugged; usually there are 3 sets of masks for each product, each mask contains 3-5 masks, and each product has 9 ⁇ 15 precision metal masks; therefore, each Product needs to be debugged 27 ⁇ 75 substrates. Because the cost of film forming materials for vapor deposition is high, each new product needs to waste a large amount of vapor deposition film forming materials;
  • Figure 1 is a comparison file 1 Schematic diagram of a precision metal mask compensation device disclosed in "Precision Metal Mask Compensation Method and Apparatus", the apparatus comprising at least two substrate cleaning unit 1 and a main vacuum chamber 2 And a vacuum chamber 3, the vacuum chamber includes five vacuum evaporation film forming chambers and a metal mask compensation compensation chamber 4, wherein the metal mask compensates the debugging chamber as a vacuum environment;
  • Comparison document 1 The partial modification of the evaporation machine can realize the compensation test of the metal mask using a special light source, but the above-mentioned modified machine has the following disadvantages:
  • the existing vacuum evaporation machine not only takes time, affects the normal working time of the machine, reduces the efficiency of the entire process, and wastes raw materials and increases operating costs.
  • the invention provides an evaporation machine platform device, which solves the problem of the transition time between the normal operation of the existing vapor deposition machine and the metal mask compensation test operation.
  • the invention provides An evaporation machine device, the device comprising at least two substrate cleaning unit, an atmospheric pressure chamber and a vacuum chamber assembly;
  • the atmospheric pressure chamber includes a normal pressure metal mask compensation test chamber and an atmospheric pressure metal mask loading chamber.
  • the atmospheric pressure metal mask compensation test chamber is provided with a alignment system in which the metal mask is aligned with the substrate, and the atmospheric pressure metal mask compensates a lower portion of the cavity of the test cavity Have a light source;
  • the atmospheric pressure chamber is disposed between the substrate cleaning unit and the vacuum chamber assembly.
  • the atmospheric pressure chamber further includes a first atmospheric pressure chamber, a second atmospheric pressure chamber, a third atmospheric pressure chamber, and a fourth atmospheric pressure chamber.
  • the first atmospheric pressure chamber is for baking the substrate
  • the second atmospheric pressure chamber is for cooling the substrate
  • the third atmospheric pressure chamber is for flipping the substrate
  • the fourth atmospheric pressure chamber For temporarily storing the substrate
  • the first atmospheric pressure chamber, the second atmospheric pressure chamber and the third atmospheric pressure chamber accommodate at least twenty sheets of the substrate.
  • the atmospheric pressure metal mask compensation test chamber is used to load a piece of the substrate and a metal mask during operation.
  • the atmospheric pressure metal mask compensation test chamber is disposed in an atmospheric environment, and the atmospheric pressure metal mask compensates for gas in the test chamber as nitrogen or air.
  • the atmospheric pressure metal mask loading chamber includes a first atmospheric pressure loading chamber and a second atmospheric pressure loading chamber;
  • the first atmospheric pressure loading chamber includes a substrate cassette, at least one of the substrates is loaded in the substrate cassette, and the second atmospheric pressure loading chamber includes a metal mask card, and the metal mask is jammed. At least one piece of the metal mask is loaded inside.
  • the first atmospheric pressure loading chamber in the vertical direction, is located on an upper side of the second atmospheric pressure loading chamber, the first atmospheric pressure loading chamber and the second atmospheric pressure A spacer is disposed between the loading chambers.
  • a first connection cavity is disposed between the atmospheric pressure chamber and the vacuum chamber assembly.
  • the first connection cavity is for switching between an atmospheric environment and a vacuum environment, the first connection cavity housing a piece of the substrate.
  • the vacuum chamber assembly includes a first vacuum chamber and a second vacuum chamber
  • the first vacuum chamber includes a first vacuum chamber first sub-cavity, a first vacuum chamber second sub-cavity, a first vacuum chamber third sub-cavity, a first vacuum chamber fourth sub-chamber, and a first a fifth sub-cavity of the vacuum chamber and a sixth sub-cavity of the first vacuum chamber;
  • the first sub-cavity of the first vacuum chamber is a plasma processing chamber
  • the second sub-cavity of the first vacuum chamber the third sub-cavity of the first vacuum chamber
  • the fourth sub-cavity of the first vacuum chamber Form a membrane cavity for the common layer.
  • the fifth sub-cavity of the first vacuum chamber is a precision pattern film forming cavity, and the fifth sub-cavity of the first vacuum chamber is used for loading one piece of the substrate and one piece during operation.
  • the first vacuum chamber sixth sub-cavity includes a first vacuum loading chamber and a second vacuum loading chamber, the first vacuum loading chamber being located on an upper side of the second vacuum loading chamber in a vertical direction;
  • the first vacuum loading chamber and the second vacuum loading chamber are configured to load the metal mask card cassette
  • the bottom layer of the second vacuum loading chamber is used to load the substrate.
  • the second vacuum chamber includes a first vacuum chamber first sub-cavity, a second vacuum chamber second sub-cavity, a second vacuum chamber third sub-cavity, and a second vacuum chamber. a fourth sub-cavity, a fifth sub-cavity of the second vacuum chamber, and a sixth sub-cavity of the second vacuum chamber;
  • the second sub-cavity of the second vacuum chamber, the second sub-cavity of the second vacuum chamber, and the third sub-cavity of the second vacuum chamber are the precision pattern film forming chamber
  • the second The sixth sub-chamber of the vacuum chamber includes a third vacuum loading chamber and a fourth vacuum loading chamber, the third vacuum loading chamber being located on an upper side of the fourth vacuum loading chamber in a vertical direction;
  • the third vacuum loading chamber and the fourth vacuum loading chamber are for loading the metal mask cassette.
  • the invention also provides an evaporation machine device, the device comprising at least two substrate cleaning machine units, an atmospheric pressure chamber and a vacuum chamber assembly;
  • the atmospheric pressure chamber comprises a normal pressure metal mask compensation test chamber and an atmospheric pressure metal mask loading chamber;
  • the atmospheric pressure chamber is disposed between the substrate cleaning unit and the vacuum chamber assembly.
  • the atmospheric pressure chamber further includes a first atmospheric pressure chamber, a second atmospheric pressure chamber, a third atmospheric pressure chamber and a fourth atmospheric pressure chamber.
  • the first atmospheric pressure chamber is for baking the substrate
  • the second atmospheric pressure chamber is for cooling the substrate
  • the third atmospheric pressure chamber is for flipping the substrate
  • the fourth atmospheric pressure chamber For temporarily storing the substrate
  • the first atmospheric pressure chamber, the second atmospheric pressure chamber and the third atmospheric pressure chamber accommodate at least twenty sheets of the substrate.
  • the atmospheric pressure metal mask compensation test chamber is used to load a piece of the substrate and a metal mask during operation.
  • the atmospheric pressure metal mask compensation test chamber is disposed in an atmospheric environment, and the atmospheric pressure metal mask compensates for gas in the test chamber as nitrogen or air.
  • the atmospheric pressure metal mask loading chamber includes a first atmospheric pressure loading chamber and a second atmospheric pressure loading chamber;
  • the first atmospheric pressure loading chamber includes a substrate cassette, at least one of the substrates is loaded in the substrate cassette, and the second atmospheric pressure loading chamber includes a metal mask card, and the metal mask is jammed. At least one piece of the metal mask is loaded inside.
  • the first atmospheric pressure loading chamber is located on an upper side of the second atmospheric pressure loading chamber, and a partition plate is disposed between the first atmospheric pressure loading chamber and the second atmospheric pressure loading chamber .
  • a first connection cavity is disposed between the atmospheric pressure chamber and the vacuum chamber assembly.
  • the first connection cavity is for switching between an atmospheric environment and a vacuum environment, the first connection cavity housing a piece of the substrate.
  • the vacuum chamber assembly includes a first vacuum chamber and a second vacuum chamber
  • the first vacuum chamber includes a first vacuum chamber first sub-cavity, a first vacuum chamber second sub-cavity, a first vacuum chamber third sub-cavity, a first vacuum chamber fourth sub-chamber, and a first a fifth sub-cavity of the vacuum chamber and a sixth sub-cavity of the first vacuum chamber;
  • the first sub-cavity of the first vacuum chamber is a plasma processing chamber
  • the second sub-cavity of the first vacuum chamber the third sub-cavity of the first vacuum chamber
  • the fourth sub-cavity of the first vacuum chamber Form a membrane cavity for the common layer.
  • the fifth sub-cavity of the first vacuum chamber is a precision pattern forming cavity, and the fifth sub-cavity of the first vacuum chamber is used for loading one piece of the substrate and one piece of the metal mask during operation;
  • the first vacuum chamber sixth sub-cavity includes a first vacuum loading chamber and a second vacuum loading chamber, the first vacuum loading chamber being located on an upper side of the second vacuum loading chamber in a vertical direction;
  • the first vacuum loading chamber and the second vacuum loading chamber are configured to load the metal mask card cassette
  • the bottom layer of the second vacuum loading chamber is used to load the substrate.
  • the second vacuum chamber includes a first vacuum chamber first sub-cavity, a second vacuum chamber second sub-cavity, a second vacuum chamber third sub-cavity, a second vacuum chamber fourth sub-chamber, and a second a fifth sub-cavity of the vacuum chamber and a sixth sub-cavity of the second vacuum chamber;
  • the second sub-cavity of the second vacuum chamber, the second sub-cavity of the second vacuum chamber, and the third sub-cavity of the second vacuum chamber are the precision pattern film forming chamber
  • the second The sixth sub-chamber of the vacuum chamber includes a third vacuum loading chamber and a fourth vacuum loading chamber, the third vacuum loading chamber being located on an upper side of the fourth vacuum loading chamber in a vertical direction;
  • the third vacuum loading chamber and the fourth vacuum loading chamber are for loading the metal mask cassette.
  • the present invention provides an atmospheric pressure chamber between the substrate cleaning machine unit and the vacuum chamber assembly, the atmospheric pressure chamber including an atmospheric pressure metal mask compensation test chamber and Pressing a metal mask loading chamber to enable the vapor deposition machine to directly enter the atmospheric pressure chamber during conversion between normal operation and the metal mask compensation test operation
  • the substrate does not need to wait for the mutual conversion between the atmospheric environment and the vacuum environment of a certain cavity, shortening the compensation time of the metal mask compensation test, and prolonging the effective operation of the vapor deposition machine
  • the time to manufacture the product or make the device can improve the efficiency of the vapor deposition line, and at the same time save the vacuum resources of the machine.
  • Figure 1 is a schematic structural view of a precision metal mask compensation device in Comparative Document 1;
  • FIG. 2 is a schematic structural view of an apparatus for an evaporation machine according to a preferred embodiment of the present invention
  • FIG. 3 is a running time diagram of an evaporation machine device in the prior art
  • Figure 4 is a running time diagram of a precision metal mask compensation device in Comparative Document 1 ;
  • Figure 5 is a timing chart showing the operation of an evaporation machine apparatus according to a preferred embodiment of the present invention.
  • the present invention is directed to an existing vapor deposition machine apparatus.
  • a certain cavity in the vapor deposition machine needs to perform an atmospheric environment and a vacuum environment.
  • the conversion between them not only delays the time for the steaming machine to operate efficiently, but also wastes the vacuum resources of the machine, and the like, and proposes an evaporation machine device, which can improve the defect.
  • FIG. 2 is a schematic structural view of an apparatus for vapor deposition apparatus according to a preferred embodiment of the present invention, the apparatus of the vapor deposition apparatus comprising at least two substrate cleaning machine units 10, an atmospheric pressure chamber 20, and a vacuum chamber assembly.
  • the number of the substrate cleaning machine units 10 is four. In the actual production line, more of the substrate cleaning machine units 10 can be disposed according to requirements.
  • the atmospheric pressure chamber 20 includes a normal pressure metal mask compensation test chamber 205 and an atmospheric pressure metal mask loading chamber 206, wherein the atmospheric pressure chamber 20 is disposed on the substrate cleaning unit and the vacuum Between the chamber assemblies;
  • the atmospheric pressure metal mask compensation test chamber 205 can only load one piece of the substrate and one metal mask plate in each operation; the atmospheric pressure metal mask compensation compensation chamber 205 is provided with the metal a aligning system for aligning the reticle with the substrate, wherein the atmospheric pressure metal reticle compensates a lower portion of the cavity of the test chamber 205 with a light source;
  • the atmospheric pressure metal mask compensation test chamber 205 is disposed at atmospheric pressure, and the gas in the chamber is nitrogen or air;
  • the atmospheric pressure metal mask loading chamber 206 includes a first atmospheric pressure loading chamber and a second atmospheric pressure loading chamber;
  • the first atmospheric pressure loading chamber includes a substrate cassette, and at least one of the substrates is loaded in the substrate cassette.
  • the substrate cassette is loaded with 1 to 5 pieces of the substrate, and the substrate may be loaded. a plurality of the substrate;
  • the second atmospheric loading chamber includes a metal mask card, wherein the metal mask is loaded with at least one piece of the metal mask, preferably, the substrate is inside the cassette Loading 1 ⁇ 10 pieces of the substrate, and loading more of the substrate;
  • the first atmospheric pressure loading chamber is located on an upper side of the second atmospheric pressure loading chamber, and a partition plate is disposed between the first atmospheric pressure loading chamber and the second atmospheric pressure loading chamber ;
  • the atmospheric pressure chamber 20 further includes a first atmospheric pressure chamber 201, a second atmospheric pressure chamber 202, a third atmospheric pressure chamber 203, and a fourth atmospheric pressure chamber 204.
  • the first atmospheric chamber 201 is for baking the substrate
  • the second atmospheric chamber 202 is for cooling the substrate
  • the third atmospheric chamber 203 is for turning the substrate
  • the fourth The atmospheric pressure 204 cavity is used for temporarily storing the substrate; wherein the first atmospheric pressure chamber 201, the second atmospheric pressure chamber 202, and the third atmospheric pressure chamber 203 accommodate at least twenty sheets of the substrate.
  • a first connection cavity 207 is disposed between the atmospheric pressure chamber 20 and the vacuum chamber assembly, and the first connection cavity 207 is used for conversion between an atmospheric environment and a vacuum environment, the first The connection cavity 207 houses a piece of the substrate.
  • the vacuum chamber assembly includes a first vacuum chamber 30 and a second vacuum chamber 40;
  • the first vacuum chamber 30 includes a first vacuum chamber first sub-cavity 301, a first vacuum chamber second sub-cavity 302, a first vacuum chamber third sub-cavity 303, and a first vacuum chamber. a four sub-cavity 304, a first vacuum chamber fifth sub-cavity 305 and a first vacuum chamber sixth sub-chamber 306;
  • first sub-cavity 301 of the first vacuum chamber is a plasma processing chamber
  • the first vacuum chamber second sub-cavity 302, the first vacuum chamber third sub-cavity 303, and the first vacuum chamber fourth sub-cavity 304 are common layer film forming cavities, and the number of common layer forming cavities Can be 2 or 4, depending on the needs of the OLED panel manufacturer;
  • the fifth sub-cavity 305 of the first vacuum chamber is a precision pattern forming cavity, and the fifth sub-cavity 305 of the first vacuum chamber is used for loading one piece of the substrate and one piece of the metal mask when working;
  • the first vacuum chamber sixth sub-cavity 306 includes a first vacuum loading chamber and a second vacuum loading chamber, the first vacuum loading chamber being located on an upper side of the second vacuum loading chamber in a vertical direction;
  • the first vacuum loading chamber and the second vacuum loading chamber are configured to load the metal mask card cassette, wherein a bottom layer of the second vacuum loading chamber is used to load the substrate;
  • the second vacuum chamber 40 includes a second vacuum chamber first sub-cavity 401, a second vacuum chamber second sub-cavity 402, a second vacuum chamber third sub-cavity 403, and a second vacuum chamber fourth sub-portion a cavity 404, a second vacuum chamber fifth sub-cavity 405 and a second vacuum chamber sixth sub-cavity 406;
  • the second vacuum chamber first sub-cavity 401, the second vacuum chamber second sub-cavity 402, and the second vacuum chamber third sub-cavity 403 are the precision pattern film forming chambers.
  • the second vacuum chamber sixth sub-cavity 406 includes a third vacuum loading chamber and a fourth vacuum loading chamber, the third vacuum loading chamber being located on an upper side of the fourth vacuum loading chamber in a vertical direction;
  • the third vacuum loading chamber and the fourth vacuum loading chamber are for loading the metal mask cassette.
  • the substrate for performing the precision metal mask compensation test operation is the substrate A, and the steps include:
  • the substrate A is cleaned in the substrate cleaning machine unit 10, then baked in the first atmospheric chamber 201, and then sent to the second atmospheric chamber 202 for cooling, and finally the first portion is temporarily stored.
  • the first metal mask is transferred from the atmospheric pressure metal mask loading chamber 206 into the atmospheric pressure metal mask compensation test chamber 205;
  • the substrate A is moved from the second atmospheric chamber 202 into the atmospheric pressure metal mask compensation test chamber 205, and the light source in the test chamber 205 is compensated by the atmospheric pressure metal mask to illuminate the substrate A;
  • the steps for making a product/device operation are described below, wherein the product substrate is different from the mask debug substrate, and is referred to herein as substrate B.
  • the steps include:
  • the substrate B is cleaned in the substrate cleaning machine unit 10, then baked in the first atmospheric chamber 201, and then sent to the second atmospheric chamber 202 for cooling, and finally the first portion is temporarily stored.
  • the substrate B is taken out from the second atmospheric chamber 202, and after being turned over by the third atmospheric chamber 203, the first connecting chamber 207 converted by the atmospheric environment-vacuum environment is moved into the The first sub-cavity 301 of the first vacuum chamber is subjected to surface treatment;
  • the substrate B is taken out from the first sub-cavity 301 of the first vacuum chamber, and passes through the first sub-cavity 302 of the first vacuum chamber, the third sub-cavity 303 of the first vacuum chamber, and the first a vacuum chamber fourth sub-cavity 304, forming a film in the first vacuum chamber second sub-cavity 302, the first vacuum chamber third sub-cavity 303, the first vacuum chamber fourth sub-cavity 304, and finally Moving the substrate B into the bottom layer of the second vacuum loading chamber;
  • the vapor chamber vacuum chamber assembly can be further increased in series to further supplement the cavity.
  • Figure 3 is a running time diagram of a conventional vapor deposition machine.
  • the OLED mass production machine usually needs to continuously produce 144 hours (6 days), and then maintain for 1 day; as shown in Figure 3, C1 is the theory.
  • the machine running time chart shows that 1 ⁇ 7 represents the first day to the 7th day, and the machine maintenance and maintenance work (marked as D) is performed on the 7th day; after the machine is maintained, it is usually required to perform vapor deposition film formation.
  • D machine maintenance and maintenance work
  • the time taken is related to the number of evaporation sources, and the correction film thickness usually requires at least 1 day;
  • Machine maintenance work takes 1 day, calculated by 28 days per month.
  • the monthly effective operation time of the evaporation machine is 4 times.
  • the effective working time (production or device operation) C is 5 days, total 20 Day/month, the following will be based on this runtime analysis machine running;
  • the effective working time of the monthly steaming machine is 16 days, as shown in C2 in Figure 3.
  • a photochromic retardation material that irradiates the surface of the substrate with ultraviolet light through a precision mask is used to leave a pattern corresponding to the mask on the surface of the substrate, and the pattern after discoloration on the substrate is measured. Calculate the compensation value of the precision mask; in addition, in order to achieve high-efficiency mask compensation and debugging, add one cavity, and separately perform metal mask compensation and debugging;
  • All film forming chambers can be directly fabricated into product/device operations after undergoing film thickness correction A; during the production of the product/device, the metal mask compensates for the debugging chamber, and the film forming chamber continues to operate after 6 days. During the maintenance operation, the metal mask compensation debugging operation is performed synchronously, which can prolong the effective working time of the vapor deposition machine and improve the utilization rate of the machine;
  • the cavity must be configured with a vacuum pump.
  • the vacuum pump is a dry pump, a molecular pump or a cold pump;
  • FIG. 5 is a timing chart of a vapor deposition machine apparatus according to a preferred embodiment of the present invention.
  • the operation mode of the vapor deposition machine is M1 in FIG. 5, after all the vapor deposition film forming chambers undergo film thickness correction, the process begins. 6 days of effective work;
  • the atmospheric pressure metal mask compensates the test chamber 205 in a waiting state; and when the film forming chamber starts the maintenance operation, the atmospheric pressure metal mask compensation test operation can be started simultaneously;
  • the atmospheric pressure metal mask compensates for the substrate in the test chamber 205 to be quickly moved into the atmospheric pressure metal mask loading chamber 206 after being illuminated by the light source. Then, open the door and directly take out the substrate for measurement;
  • the time consumed by the metal mask compensation test operation in M1 in FIG. 5 is necessarily shorter than the process in FIG. 4 (less than the original time 1/2); wherein the width of the M1 job B in FIG. 4 represents the time consumed, the shadow The part represents the time of compression, and the actual B job time is white;
  • the present invention provides an evaporation apparatus apparatus, the apparatus comprising at least two substrate cleaning unit, an atmospheric pressure chamber, and a vacuum chamber assembly; wherein the substrate cleaning unit and the vacuum chamber assembly Between the atmospheric pressure chambers, the atmospheric pressure chamber includes an atmospheric pressure metal mask compensation test chamber and an atmospheric pressure metal mask loading chamber, so that the evaporation machine is in normal operation and the metal mask
  • the vapor deposition machine device can directly perform the metal mask compensation test operation in the atmospheric pressure chamber, and the substrate does not need to wait for the atmosphere of a certain cavity-vacuum environment
  • the mutual conversion greatly shortens the compensation time of the metal mask compensation test, and prolongs the time of the effective operation of the vapor deposition machine (making the product or manufacturing the device), improves the working efficiency of the vapor deposition line, and also saves The machine vacuum resources.

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种蒸镀机台装置，其包括至少两个基板清洗机单元（10）、常压腔体（20）以及真空腔集合体；常压腔体（20）包括常压金属掩膜板补偿测试腔（205）和常压金属掩膜板装载腔（206），其中，常压金属掩膜板补偿测试腔（205）内设置有金属掩膜板与基板进行对位的对位系统，常压金属掩膜板补偿测试腔（205）的腔体下部设置有光源；常压腔体（20）设置于基板清洗机单元（10）与真空腔集合体之间。

Description

一种蒸镀机台装置 技术领域
本发明涉及一种制造工艺设备，特别涉及一种蒸镀机台装置。
背景技术
OLED （ Organic Light Emitting Diode ，有机发光二极管）器件由于自发光、全固态、宽视角、响应快等优点，在平板显示产品中有巨大应用前景，甚至被认为是继 LCD 、 PDP （ plasma display panel ，等离子）之后的新一代的平板显示产品。
镀膜技术大致可分为物理气相沉积以及化学气相沉积。前者主要是通过物理现象进行薄膜沉积，而后者主要是以化学反应的方式进行薄膜沉积。其中，物理气相沉积更以蒸镀（ evaporation ）及溅镀（ sputtering ）为目前的主流。此两种技术的共同点就是以物理现象的方式来进行薄膜沉积。就蒸镀而言，其原理大抵是借着对被蒸镀物体进行加热，并利用被蒸镀物在高温（接近其熔点）时所具备的饱和蒸气压，来进行薄膜的沉积。
蒸镀技术的应用广泛，如作为显示元件主流之一的有机电激发光元件便可采用蒸镀技术来制作有机层。然而，现行蒸镀技术仍然存在难以制作大面积元件、材料容易因高温劣化、蒸镀膜厚不均、材料利用率低等问题。
采用真空蒸镀技术制备 OLED 薄膜，真空环境中加热有机 / 金属材料，材料受热升华，通过具有图案的金属掩膜板，在基板表面形成具有一定形状的有机 / 金属薄膜。经历多种材料的连续沉积成膜，即可形成具有多层薄膜的 OLED 结构。
通常情况，真空蒸镀机台有 5 种作业：
（ 1 ）机台维护（含填充料，防着板更换，更换晶振片等）；
（ 2 ）薄膜厚度校正作业；
（ 3 ）制作 OLED 器件作业；
（ 4 ）精密掩膜板补偿调试作业；
（ 5 ）制作产品作业。
其中，作业 3 和 5 ，在设定完制程菜单后，机台可以自动执行；但是作业 1 ， 2 和 4 需要作业人员参与，进行手动作业。蒸镀机台产线有效的作业（制作器件和产品作业）和其它作业（上述作业 1 ， 2 ， 4 ）冲突，其它作业时间越长，有效作业时间就越短。
上述作业 4 精密掩膜板补偿调试作业内容如下：
制造彩色显示面板，真空蒸镀环节需要使用 Array 制程后基板， Array 基板表面露出红（ R ），绿（ G ），蓝（ B ）子像素对应的阳极图案，同时各个子像素和周围紧邻子像素之间存在绝缘层；
需要使用精密型掩膜板沉积 OLED 的发光层，通常红（ R ），绿（ G ），蓝（ B ）子像素，每 1 个子像素都需要 1 张精密型掩膜板。精密掩膜板补偿调试作业可以使得，精细掩膜板蒸镀成膜后，成膜图案的位置覆盖子像素阳极，并且阳极位于成膜图案的中央， 避免发生混色效应。
而现有精密掩膜板补偿调试作业的方法方法存在以下 3 个缺点：
（ 1 ）上述金属掩膜板补偿方法占用蒸镀设备镀膜腔体，通常每台蒸镀设备有 3-5 个精细图案成膜腔，采用上述补偿方法调试金属掩膜板，使得真空蒸镀整条线无法进行正常产品作业，机台必须等待金属掩膜板调试作业结束后，才能开始正常产品制造作业；
（ 2 ）上述金属掩膜板补偿方法必须使用蒸镀成膜材料（通常为有机材料），而且每张掩膜板必须调试 3-5 片基板才能完成调试作业；通常每一款产品有 3 套掩模板，每套掩模板包含 3-5 片掩膜板，每款产品共 9~15 片精密型金属掩膜板；因此，每款产品需要调试 27~75 片基板。因为蒸镀用成膜材料价格高昂，所以每款新产品需要浪费大量蒸镀成膜材料；
（ 3 ）上述金属掩膜板补偿方法速度慢，因为对于每 1 张金属掩模版需要经历：材料升温 & 速率稳定，蒸镀成膜，膜图案测量过程，蒸镀成膜速率一般 0.5~2Å/s ，成膜厚度 500~1500Å ，单片玻璃成膜消耗时间 15min ；考虑上述补偿调试玻璃用量（ 27-75 片），每款新产品调试掩膜板需要消耗 400~1000min 。
图 1 所述为对比文件 1 《一种精密型金属掩膜板补偿方法和设备》中所公布的一种精密型金属掩膜板补偿设备的结构示意图，所述设备包括至少两个基板清洗机单元 1 、主真空腔体 2 以及辅真空腔体 3 ，所述真空腔体包括五个真空蒸镀成膜腔和一个金属掩膜板补偿调试腔体 4 ，其中所述金属掩膜板补偿调试腔体为真空环境；
对比文件 1 对蒸镀机台做局部改造，可以实现利用特殊光源进行金属掩膜板补偿测试，但是上述改造过后的机台还有以下缺点：
（ 1 ）浪费真空资源：对比文件 1 中的所述蒸镀机台在进行所述金属掩膜板补偿调试作业时，因为不需要蒸镀薄膜，所以实际上不需要在真空环境中进行。
（ 2 ）基板传送时间长：所述 基板从大气环境 - 真空环境之间相互输送时，必定有某一个腔体需要经历：进片、破真空、取片、抽真空或等待下次进片的动作，耽误了所述蒸镀机台有效作业的时间。
因此，现有的真空蒸镀机台不仅耗时，影响机台正常工作时间，降低了整个制程的效率，并且浪费原材料，增加了运营成本。
 技术问题
本发明提供一种蒸镀机台装置，以解决现有蒸镀机台正常作业与金属掩膜板补偿测试作业之间转换用时长的问题。
技术解决方案
为实现上述目的， 本发明提供的技术方案如下：
本发明提供了 一种蒸镀机台装置，所述装置包括至少两个基板清洗机单元、常压腔体以及真空腔集合体；
所述常压腔体包括常压金属掩膜板补偿测试腔和常压金属掩膜板装载腔，
其中，所述常压金属掩膜板补偿测试腔内设置有所述金属掩膜板与所述基板进行对位的对位系统，所述常压金属掩膜板补偿测试腔的腔体下部设置有光源；
所述常压腔体设置于所述基板清洗机单元与所述真空腔集合体之间。
根据本发明一优选实施例，所述常压腔体还包括第一常压腔、第二常压腔、第三常压腔及第四常压腔，
所述第一常压腔用于烘烤所述基板，所述第二常压腔用于冷却所述基板，所述第三常压腔用于翻转所述基板，所述第四常压腔用于暂存所述基板；
其中，所述第一常压腔、所述第二常压腔以及所述第三常压腔容纳至少二十片所述基板。
根据本发明一优选实施例，所述常压金属掩膜板补偿测试腔用于在作业时装载一片所述基板和一片金属掩膜板。
根据本发明一优选实施例，所述常压金属掩膜板补偿测试腔配置在大气环境中，所述常压金属掩膜板补偿测试腔腔内的气体为氮气或空气。
根据本发明一优选实施例，所述常压金属掩膜板装载腔包括第一常压装载腔和第二常压装载腔；
所述第一常压装载腔包括基板卡匣，所述基板卡匣内装载至少一片所述基板，所述第二常压装载腔包括金属掩膜板卡匣，所述金属掩膜板卡匣内装载至少一片所述金属掩膜板。
根据本发明一优选实施例，在竖直方向上，所述第一常压装载腔位于所述第二常压装载腔的上侧，所述第一常压装载腔和所述第二常压装载腔之间设置有隔离板。
根据本发明一优选实施例，在所述常压腔体与所述真空腔集合体之间设置有第一连接腔体，
所述第一连接腔体用于大气环境和真空环境之间的转换，所述第一连接腔体容纳一片所述基板。
根据本发明一优选实施例，所述真空腔集合体包括第一真空腔体和第二真空腔体；
所述第一真空腔体包括第一真空腔体第一子腔、第一真空腔体第二子腔、第一真空腔体第三子腔、第一真空腔体第四子腔、第一真空腔体第五子腔以及第一真空腔体第六子腔；
所述第一真空腔体第一子腔为等离子体处理腔，所述第一真空腔体第二子腔、所述第一真空腔体第三子腔以及第一真空腔体第四子腔为共同层成膜腔。
根据本发明一优选实施例，所述第一真空腔体第五子腔为精密图案成膜腔，所述第一真空腔体第五子腔用于在作业时装载一片所述基板和一片所述金属掩膜板；
所述第一真空腔体第六子腔包括第一真空装载腔和第二真空装载腔，在竖直方向上，所述第一真空装载腔位于所述第二真空装载腔的上侧；
所述第一真空装载腔和所述第二真空装载腔用于装载所述金属掩膜板卡匣，
其中，所述第二真空装载腔的底层用于装载所述基板。
根据本发明一优选实施例，所述第二真空腔体包括第二真空腔体第一子腔、第二真空腔体第二子腔、第二真空腔体第三子腔、第二真空腔体第四子腔、第二真空腔体第五子腔以及第二真空腔体第六子腔；
其中，所述第二真空腔体第一子腔、所述第二真空腔体第二子腔以及所述第二真空腔体第三子腔为所述精密图案成膜腔，所述第二真空腔体第六子腔包括第三真空装载腔和第四真空装载腔，在竖直方向上，所述第三真空装载腔位于所述第四真空装载腔的上侧；
所述第三真空装载腔和所述第四真空装载腔用于装载所述金属掩膜板卡匣。
本发明还提出了一种蒸镀机台装置，所述装置包括至少两个基板清洗机单元、常压腔体以及真空腔集合体；
其中，所述常压腔体包括常压金属掩膜板补偿测试腔和常压金属掩膜板装载腔；
所述常压腔体设置于所述基板清洗机单元与所述真空腔集合体之间。
根据本发明一优选实施例， 所述常压腔体还包括第一常压腔、第二常压腔、第三常压腔及第四常压腔，
所述第一常压腔用于烘烤所述基板，所述第二常压腔用于冷却所述基板，所述第三常压腔用于翻转所述基板，所述第四常压腔用于暂存所述基板；
其中，所述第一常压腔、所述第二常压腔以及所述第三常压腔容纳至少二十片所述基板。
根据本发明一优选实施例， 所述常压金属掩膜板补偿测试腔用于在作业时装载一片所述基板和一片金属掩膜板。
根据本发明一优选实施例， 所述常压金属掩膜板补偿测试腔配置在大气环境中，所述常压金属掩膜板补偿测试腔腔内的气体为氮气或空气。
根据本发明一优选实施例， 所述常压金属掩膜板装载腔包括第一常压装载腔和第二常压装载腔；
所述第一常压装载腔包括基板卡匣，所述基板卡匣内装载至少一片所述基板，所述第二常压装载腔包括金属掩膜板卡匣，所述金属掩膜板卡匣内装载至少一片所述金属掩膜板。
根据本发明一优选实施例， 在竖直方向上，所述第一常压装载腔位于所述第二常压装载腔的上侧，所述第一常压装载腔和所述第二常压装载腔之间设置有隔离板。
根据本发明一优选实施例， 在所述常压腔体与所述真空腔集合体之间设置有第一连接腔体，
所述第一连接腔体用于大气环境和真空环境之间的转换，所述第一连接腔体容纳一片所述基板。
根据本发明一优选实施例， 所述真空腔集合体包括第一真空腔体和第二真空腔体；
所述第一真空腔体包括第一真空腔体第一子腔、第一真空腔体第二子腔、第一真空腔体第三子腔、第一真空腔体第四子腔、第一真空腔体第五子腔以及第一真空腔体第六子腔；
所述第一真空腔体第一子腔为等离子体处理腔，所述第一真空腔体第二子腔、所述第一真空腔体第三子腔以及第一真空腔体第四子腔为共同层成膜腔。
根据本发明一优选实施例， 所述第一真空腔体第五子腔为精密图案成膜腔，所述第一真空腔体第五子腔用于在作业时装载一片所述基板和一片所述金属掩膜板；
所述第一真空腔体第六子腔包括第一真空装载腔和第二真空装载腔，在竖直方向上，所述第一真空装载腔位于所述第二真空装载腔的上侧；
所述第一真空装载腔和所述第二真空装载腔用于装载所述金属掩膜板卡匣，
其中，所述第二真空装载腔的底层用于装载所述基板。
根据本发明一优选实施例， 所述第二真空腔体包括第二真空腔体第一子腔、第二真空腔体第二子腔、第二真空腔体第三子腔、第二真空腔体第四子腔、第二真空腔体第五子腔以及第二真空腔体第六子腔；
其中，所述第二真空腔体第一子腔、所述第二真空腔体第二子腔以及所述第二真空腔体第三子腔为所述精密图案成膜腔，所述第二真空腔体第六子腔包括第三真空装载腔和第四真空装载腔，在竖直方向上，所述第三真空装载腔位于所述第四真空装载腔的上侧；
所述第三真空装载腔和所述第四真空装载腔用于装载所述金属掩膜板卡匣。
 有益效果
本发明的有益效果： 相比于现有技术，本发明通过在所述基板清洗机单元与所述真空腔集合体之间设置常压腔体，所述常压腔体包括常压金属掩膜板补偿测试腔和常压金属掩膜板装载腔，使得所述蒸镀机台在正常作业与所述金属掩膜板补偿测试作业之间的转换时，所述蒸镀机台装置能直接在所述常压腔体中进行金属掩膜板补偿测试作业，所述基板无需等待某一腔体的大气环境与真空环境之间的相互转换，缩短了金属掩膜板补偿测试作业时间，延长蒸镀机台的有效作业（制作产品或制作器件）的时间，达到提高蒸镀线工作效率的目的，同时可以节省机台真空资源。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图 1 为对比文件 1 中 一种精密型金属掩膜板补偿设备的结构示意图 ；
图 2 为本发明优选实施例一种蒸镀机台装置的结构示意图；
图 3 为现有技术中 一种蒸镀机台装置的运行时间图 ；
图 4 为对比文件 1 中 一种精密型金属掩膜板补偿设备 的运行时间图 ；
图 5 为本发明优选实施例 一种蒸镀机台装置的运行时间图 。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如 [ 上 ] 、 [ 下 ] 、 [ 前 ] 、 [ 后 ] 、 [ 左 ] 、 [ 右 ] 、 [ 内 ] 、 [ 外 ] 、 [ 侧面 ] 等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有的蒸镀机台装置，在进行正常作业与所述金属掩膜板补偿测试作业之间的切换时，所述蒸镀机台中的某一腔体需要进行大气环境与真空环境之间的转换，不仅耽误了所述蒸镀机台有效作业的时间，同时浪费了机台的真空资源等问题，而提出了一种蒸镀机台装置，本实施例能够改善该缺陷。
图2所示为本发明优选实施例一种蒸镀机台装置的结构示意图，所述蒸镀机台装置包括至少两个基板清洗机单元10、常压腔体20以及真空腔集合体。
如图2所示，在本实施例中，所述基板清洗机单元10为四个，在实际产线中，根据需求可以配置更多的所述基板清洗机单元10。
所述常压腔体20包括常压金属掩膜板补偿测试腔205和常压金属掩膜板装载腔206，其中，所述常压腔体20设置于所述基板清洗机单元与所述真空腔集合体之间；
所述常压金属掩膜板补偿测试腔205在每次作业时，只能装载一片所述基板和一片金属掩膜板；所述常压金属掩膜板补偿测试腔205内设置有所述金属掩膜板与所述基板进行对位的对位系统，所述常压金属掩膜板补偿测试腔205的腔体下部设置有光源；
另外，所述常压金属掩膜板补偿测试腔205配置在大气压力中，并且，腔内的气体为氮气或空气；
所述常压金属掩膜板装载腔206包括第一常压装载腔和第二常压装载腔；
其中，所述第一常压装载腔包括基板卡匣，所述基板卡匣内装载至少一片所述基板，优选的，所述基板卡匣内装载1~5片所述基板，也可以装载更多的所述基板；所述第二常压装载腔包括金属掩膜板卡匣，所述金属掩膜板卡匣内装载至少一片所述金属掩膜板，优选的，所述基板卡匣内装载1~10片所述基板，也可以装载更多的所述基板；
在竖直方向上，所述第一常压装载腔位于所述第二常压装载腔的上侧，所述第一常压装载腔和所述第二常压装载腔之间设置有隔离板；
所述常压腔体20还包括第一常压腔201、第二常压腔202、第三常压腔203及第四常压腔204，
所述第一常压腔201用于烘烤所述基板，所述第二常压腔202用于冷却所述基板，所述第三常压腔203用于翻转所述基板，所述第四常压204腔用于暂存所述基板；其中，所述第一常压腔201、所述第二常压腔202以及所述第三常压腔203容纳至少二十片所述基板。
在所述常压腔体20与所述真空腔集合体之间设置有第一连接腔体207，所述第一连接腔体207用于大气环境和真空环境之间的转换，所述第一连接腔体207容纳一片所述基板。
所述真空腔集合体包括第一真空腔体30和第二真空腔体40；
其中，所述第一真空腔体30包括第一真空腔体第一子腔301、第一真空腔体第二子腔302、第一真空腔体第三子腔303、第一真空腔体第四子腔304、第一真空腔体第五子腔305以及第一真空腔体第六子腔306；
其中，所述第一真空腔体第一子腔301为等离子体处理腔；
所述第一真空腔体第二子腔302、所述第一真空腔体第三子腔303以及第一真空腔体第四子腔304为共同层成膜腔，共同层成膜腔的数量可以为2或4个，根据OLED面板生产厂商的需求而决定；
所述第一真空腔体第五子腔305为精密图案成膜腔，所述第一真空腔体第五子腔305用于作业时装载一片所述基板和一片所述金属掩膜板；
所述第一真空腔体第六子腔306包括第一真空装载腔和第二真空装载腔，在竖直方向上，所述第一真空装载腔位于所述第二真空装载腔的上侧；所述第一真空装载腔和所述第二真空装载腔用于装载所述金属掩膜板卡匣，其中，所述第二真空装载腔的底层用于装载所述基板；
所述第二真空腔体40包括第二真空腔体第一子腔401、第二真空腔体第二子腔402、第二真空腔体第三子腔403、第二真空腔体第四子腔404、第二真空腔体第五子腔405以及第二真空腔体第六子腔406；
其中，所述第二真空腔体第一子腔401、所述第二真空腔体第二子腔402以及所述第二真空腔体第三子腔403为所述精密图案成膜腔，所述第二真空腔体第六子腔406包括第三真空装载腔和第四真空装载腔，在竖直方向上，所述第三真空装载腔位于所述第四真空装载腔的上侧；
所述第三真空装载腔和所述第四真空装载腔用于装载所述金属掩膜板卡匣。
下面将介绍所述金属掩膜板补偿调试作业的步骤，其中，进行精密型金属掩膜板补偿测试作业的所述基板为基板A，所述步骤包括：
S110 、将所述基板A在所述基板清洗机单元10中清洗，然后经所述第一常压腔201烘烤后，输送至所述第二常压腔202内冷却，最后暂存在所述第二常压腔202中；
S120 、将第一片金属掩膜板从所述常压金属掩膜板装载腔206中移入常压金属掩膜板补偿测试腔205；
S130 、从所述第二常压腔202中将所述基板A移入常压金属掩膜板补偿测试腔205中，并利用常压金属掩膜板补偿测试腔205内的光源照射所述基板A；
S140 、将经过光源照射的所述基板A移入所述第一常压装载腔中，将所述第一片金属掩膜板移入所述第二常压装载腔中；
S150 、将第二片金属掩膜板从所述常压金属掩膜板装载腔206中移入常压金属掩膜板补偿测试腔205，将第二片所述基板A经所述第三常压腔203翻转后移入所述常压金属掩膜板装载腔206中进行光源照射基板作业，进行循环作业；
S160 、当所述第一常压装载腔中所述基板A装满后，打开所述第一常压装载腔中的腔门，去除基板测量。
下面将介绍制作产品/器件作业的步骤，其中，产品基板与掩膜板调试基板不同，此处命名为基板B，所述步骤包括：
S210 、将所述基板B在所述基板清洗机单元10中清洗，然后经所述第一常压腔201烘烤后，输送至所述第二常压腔202内冷却，最后暂存在所述第二常压腔202中；
S220 、从所述第二常压腔202中将所述基板B取出，经所述第三常压腔203翻转后，通过大气环境-真空环境转换的所述第一连接腔207，移入至所述第一真空腔第一子腔301进行表面处理；
S230 、将所述第一真空腔第六子腔306的第一真空装载腔和第二真空装载腔中的所述金属掩膜板分别移入至所述第一真空腔第二子腔302、所述第一真空腔第三子腔303、所述第一真空腔第四子腔304中；
S240 、将所述基板B从所述第一真空腔第一子腔301中取出，分别经过所述第一真空腔第二子腔302、所述第一真空腔第三子腔303、所述第一真空腔第四子腔304，在所述第一真空腔第二子腔302、所述第一真空腔第三子腔303、所述第一真空腔第四子腔304内成膜，最后将所述基板B移入至所述第二真空装载腔底层；
S250 、将所述第二真空腔第六子腔406的第三真空装载腔和第四真空装载腔中的所述金属掩膜板分别移入至所述第二真空腔第一子腔401、所述第二真空腔第二子腔402、所述第二真空腔第三子腔403、所述第二真空腔第四子腔404以及所述第二真空腔第五子腔405中；
S260 、将所述基板B从所述第二真空装载腔底层中取出，分别经过所述第二真空腔第一子腔401、第二真空腔第二子腔402、所述第二真空腔第三子腔403、所述第二真空腔第四子腔404、第二真空腔第五子腔404，在所述第二真空腔第一子腔401、第二真空腔第二子腔402、所述第二真空腔第三子腔403、所述第二真空腔第四子腔404、第二真空腔第五子腔405内成膜，最后将所述基板B移入至所述第四真空装载腔底层。
优选的，如果上述蒸镀腔真空腔集合体的腔体数量不足，仍然可以以串联的方法增加蒸镀腔真空腔集合，进一步补充腔体。
图3为传统的一种蒸镀机台装置的运行时间图，在理论上，OLED量产机台通常需要连续生产144小时（6天），然后维护保养1天；如图3中C1为理论机台运行时间图所示，其中1~7代表第1天~第7天，第7天进行机台维护保养作业（标记为D）；由于机台维护保养之后，通常需要进行蒸镀成膜，并用椭偏仪校正薄膜厚度（标记为A），占用的时间和蒸发源的数量相关，而校正薄膜厚度作业通常需要至少1天；
机台维护作业需要占用1天，以每月28天时间计算，蒸镀机台每月有效作业次数为4次，每次有效作业时间（制作产品或制作器件作业）C为5天，共20天/月，以下将基于此运行时间分析机台运行；
当考虑金属掩膜板补偿调试作业时（标记为B），因为金属掩膜板调试作业占用精细成膜腔，进行金属掩膜板调试作业时无法进行产品或器件制作，因此实际上单次的有效作业时长更会变短，理论上每月蒸镀机台的有效作业时间为16天，如图3中C2所示。
图4为对比文件1《一种精密型金属掩膜板补偿方法和设备》中一种蒸镀机台设备运行时间图，
对比文件中通过采用一种采用紫外光透过精密型掩膜板照射基板表面的光致变色延迟材料，使得基板表面留下与掩膜板对应的图案，通过测量基板上变色后的图案，并计算精密型掩膜板的补偿值；除此之外，为了实现高效率的进行掩膜板补偿调试，增加1个腔体，单独进行金属掩膜板补偿调试作业；
所有成膜腔在经历膜厚度校正A之后，可以直接进行制作产品/器件作业；在制作产品/器件作业期间，金属掩膜板补偿调试腔处于等待状态，当成膜腔连续作业6天后并开始进行维护保养作业期间，同步进行金属掩膜板补偿调试作业，这样可以延长蒸镀机台有效作业时间，提高机台的利用率；
但是，由于所述金属掩膜板补偿调试腔和紧邻的腔体都处于真空环境，所以腔体必须配置真空泵，优选的，所述真空泵为干泵、分子泵或冷泵；
最重要的是，当金属掩膜板补偿调试腔内的基板从大气环境-真空环境之间相互输入时，必定有某一个腔体需要经历：进片、破真空、取片、抽真空或等待下次进片的动作；不仅耽误了所述蒸镀机台有效作业的时间，同时浪费了机台的真空资源等问题。
图5位本发明优选实施例一种蒸镀机台装置运行时间图，所述蒸镀机台运行方式为图5中M1时，在所有蒸镀成膜腔经历膜厚校正后，开始进行为期6天的有效作业；
其中，在有效作业期间，所述常压金属掩膜板补偿测试腔205处于等待状态；而当成膜腔开始维护保养作业时，能同步开始所述常压金属掩膜板补偿测试作业；
由于所述常压金属掩膜板装载腔206的存在，所述常压金属掩膜板补偿测试腔205内的基板经光源照射后，可以迅速移入所述常压金属掩膜板装载腔206中，然后打开腔门直接取出基板进行测量；
因此，图5中M1内金属掩膜板补偿测试作业消耗的时间必然比图4中的过程更短（小于原时间1/2）；其中，图4中M1作业B宽度代表消耗的时间，阴影部分代表被压缩的时间，实际B作业的时间为白色部分；
如图5中M2所示，当正常有效作业在第3天停止时，立即进行掩膜板补偿调试作业，做完后再开始正常有效作业；同时，也可以在成膜腔进行维护保养的期间，同步进行金属掩膜板补偿调试作业；因为金属掩膜板补偿调试作业的时间被大大缩短，因此当产线需要应急进行掩膜板补偿调试作业，产线可以迅速切换作业，缩短了金属掩膜板补偿测试作业时间，延长了蒸镀机台的有效作业时间。
本发明提出了一种蒸镀机台装置，所述装置包括至少两个基板清洗机单元、常压腔体以及真空腔集合体；其中，所述基板清洗机单元与所述真空腔集合体之间设置常压腔体，所述常压腔体包括常压金属掩膜板补偿测试腔和常压金属掩膜板装载腔，使得所述蒸镀机台在正常作业与所述金属掩膜板补偿测试作业之间的转换时，所述蒸镀机台装置能直接在所述常压腔体中进行金属掩膜板补偿测试作业，所述基板无需等待某一腔体的大气环境-真空环境之间的相互转换，大大缩短了金属掩膜板补偿测试作业时间，并延长了蒸镀机台的有效作业（制作产品或制作器件）的时间，提高了蒸镀线的工作效率，同时也节省了机台真空资源。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种蒸镀机台装置，其包括至少两个基板清洗机单元、常压腔体以及真空腔集合体；
    所述常压腔体包括常压金属掩膜板补偿测试腔和常压金属掩膜板装载腔，
    其中，所述常压金属掩膜板补偿测试腔内设置有金属掩膜板与基板进行对位的对位系统，所述常压金属掩膜板补偿测试腔的腔体下部设置有光源；
    所述常压腔体设置于所述基板清洗机单元与所述真空腔集合体之间。
  2. 根据权利要求1所述的装置，其中，所述常压腔体还包括第一常压腔、第二常压腔、第三常压腔及第四常压腔，
    所述第一常压腔用于烘烤所述基板，所述第二常压腔用于冷却所述基板，所述第三常压腔用于翻转所述基板，所述第四常压腔用于暂存所述基板；
    其中，所述第一常压腔、所述第二常压腔以及所述第三常压腔容纳至少二十片所述基板。
  3. 根据权利要求1所述的装置，其中，所述常压金属掩膜板补偿测试腔用于在作业时装载一片所述基板和一片所述金属掩膜板。
  4. 根据权利要求1所述的装置，其中，所述常压金属掩膜板补偿测试腔配置在大气环境中，所述常压金属掩膜板补偿测试腔腔内的气体为氮气或空气。
  5. 根据权利要求1所述的装置，其中，所述常压金属掩膜板装载腔包括第一常压装载腔和第二常压装载腔；
    所述第一常压装载腔包括基板卡匣，所述基板卡匣内装载至少一片所述基板，所述第二常压装载腔包括金属掩膜板卡匣，所述金属掩膜板卡匣内装载至少一片所述金属掩膜板。
  6. 根据权利要求5所述的装置，其中，在竖直方向上，所述第一常压装载腔位于所述第二常压装载腔的上侧，所述第一常压装载腔和所述第二常压装载腔之间设置有隔离板。
  7. 根据权利要求1所述的装置，其中，在所述常压腔体与所述真空腔集合体之间设置有第一连接腔体，
    所述第一连接腔体用于大气环境和真空环境之间的转换，所述第一连接腔体容纳一片所述基板。
  8. 根据权利要求1所述的装置，其中，所述真空腔集合体包括第一真空腔体和第二真空腔体；
    所述第一真空腔体包括第一真空腔体第一子腔、第一真空腔体第二子腔、第一真空腔体第三子腔、第一真空腔体第四子腔、第一真空腔体第五子腔以及第一真空腔体第六子腔；
    所述第一真空腔体第一子腔为等离子体处理腔，所述第一真空腔体第二子腔、所述第一真空腔体第三子腔以及第一真空腔体第四子腔为共同层成膜腔。
  9. 根据权利要求8所述的装置，其中，所述第一真空腔体第五子腔为精密图案成膜腔，所述第一真空腔体第五子腔用于在作业时装载一片所述基板和一片所述金属掩膜板；
    所述第一真空腔体第六子腔包括第一真空装载腔和第二真空装载腔，在竖直方向上，所述第一真空装载腔位于所述第二真空装载腔的上侧；
    所述第一真空装载腔和所述第二真空装载腔用于装载所述金属掩膜板卡匣，
    其中，所述第二真空装载腔的底层用于装载所述基板。
  10. 根据权利要求8所述的装置，其中，所述第二真空腔体包括第二真空腔体第一子腔、第二真空腔体第二子腔、第二真空腔体第三子腔、第二真空腔体第四子腔、第二真空腔体第五子腔以及第二真空腔体第六子腔；
    其中，所述第二真空腔体第一子腔、所述第二真空腔体第二子腔以及所述第二真空腔体第三子腔为所述精密图案成膜腔，所述第二真空腔体第六子腔包括第三真空装载腔和第四真空装载腔，在竖直方向上，所述第三真空装载腔位于所述第四真空装载腔的上侧；
    所述第三真空装载腔和所述第四真空装载腔用于装载所述金属掩膜板卡匣。
  11. 一种蒸镀机台装置，其包括至少两个基板清洗机单元、常压腔体以及真空腔集合体；
    其中，所述常压腔体包括常压金属掩膜板补偿测试腔和常压金属掩膜板装载腔；
    所述常压腔体设置于所述基板清洗机单元与所述真空腔集合体之间。
  12. 根据权利要求1所述的装置，其中，所述常压腔体还包括第一常压腔、第二常压腔、第三常压腔及第四常压腔，
    所述第一常压腔用于烘烤所述基板，所述第二常压腔用于冷却所述基板，所述第三常压腔用于翻转所述基板，所述第四常压腔用于暂存所述基板；
    其中，所述第一常压腔、所述第二常压腔以及所述第三常压腔容纳至少二十片所述基板。
  13. 根据权利要求1所述的装置，其中，所述常压金属掩膜板补偿测试腔用于在作业时装载一片所述基板和一片金属掩膜板。
  14. 根据权利要求1所述的装置，其中，所述常压金属掩膜板补偿测试腔配置在大气环境中，所述常压金属掩膜板补偿测试腔腔内的气体为氮气或空气。
  15. 根据权利要求1所述的装置，其中，所述常压金属掩膜板装载腔包括第一常压装载腔和第二常压装载腔；
    所述第一常压装载腔包括基板卡匣，所述基板卡匣内装载至少一片所述基板，所述第二常压装载腔包括金属掩膜板卡匣，所述金属掩膜板卡匣内装载至少一片所述金属掩膜板。
  16. 根据权利要求15所述的装置，其中，在竖直方向上，所述第一常压装载腔位于所述第二常压装载腔的上侧，所述第一常压装载腔和所述第二常压装载腔之间设置有隔离板。
  17. 根据权利要求1所述的装置，其中，在所述常压腔体与所述真空腔集合体之间设置有第一连接腔体，
    所述第一连接腔体用于大气环境和真空环境之间的转换，所述第一连接腔体容纳一片所述基板。
  18. 根据权利要求1所述的装置，其中，所述真空腔集合体包括第一真空腔体和第二真空腔体；
    所述第一真空腔体包括第一真空腔体第一子腔、第一真空腔体第二子腔、第一真空腔体第三子腔、第一真空腔体第四子腔、第一真空腔体第五子腔以及第一真空腔体第六子腔；
    所述第一真空腔体第一子腔为等离子体处理腔，所述第一真空腔体第二子腔、所述第一真空腔体第三子腔以及第一真空腔体第四子腔为共同层成膜腔。
  19. 根据权利要求18所述的装置，其中，所述第一真空腔体第五子腔为精密图案成膜腔，所述第一真空腔体第五子腔用于在作业时装载一片所述基板和一片所述金属掩膜板；
    所述第一真空腔体第六子腔包括第一真空装载腔和第二真空装载腔，在竖直方向上，所述第一真空装载腔位于所述第二真空装载腔的上侧；
    所述第一真空装载腔和所述第二真空装载腔用于装载所述金属掩膜板卡匣，
    其中，所述第二真空装载腔的底层用于装载所述基板。
  20. 根据权利要求18所述的装置，其中，所述第二真空腔体包括第二真空腔体第一子腔、第二真空腔体第二子腔、第二真空腔体第三子腔、第二真空腔体第四子腔、第二真空腔体第五子腔以及第二真空腔体第六子腔；
    其中，所述第二真空腔体第一子腔、所述第二真空腔体第二子腔以及所述第二真空腔体第三子腔为所述精密图案成膜腔，所述第二真空腔体第六子腔包括第三真空装载腔和第四真空装载腔，在竖直方向上，所述第三真空装载腔位于所述第四真空装载腔的上侧；
    所述第三真空装载腔和所述第四真空装载腔用于装载所述金属掩膜板卡匣。
PCT/CN2017/106788 2017-08-16 2017-10-19 一种蒸镀机台装置 Ceased WO2019033535A1 (zh)

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