WO2019019867A1 - 散热元件及其制备方法和igbt模组 - Google Patents

散热元件及其制备方法和igbt模组 Download PDF

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WO2019019867A1
WO2019019867A1 PCT/CN2018/093956 CN2018093956W WO2019019867A1 WO 2019019867 A1 WO2019019867 A1 WO 2019019867A1 CN 2018093956 W CN2018093956 W CN 2018093956W WO 2019019867 A1 WO2019019867 A1 WO 2019019867A1
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aluminum
heat dissipating
aluminum layer
heat
ceramic
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English (en)
French (fr)
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宫清
林信平
徐强
刘成臣
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BYD Co Ltd
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BYD Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

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  • the present disclosure relates to the field of heat sink technology, and in particular, to a heat dissipating component, a method of fabricating the same, and an IGBT module.
  • IGBT Insulated Gate Bipolar Transistor
  • IGBT chips are composite full-control voltage-driven power semiconductor device composed of a bipolar transistor and an insulated gate field effect transistor, which is widely used in various electronic devices.
  • high-current electronic devices such as inverters
  • IGBT chips are subjected to higher currents, and the amount of heat generated during operation is increasing.
  • the existing IGBT chip is directly packaged by vacuum soldering technology.
  • the package process includes three process steps: preparation of ceramic aluminum or ceramic copper-clad thermal conductor, treatment of aluminum-silicon carbon heat-dissipating body, and ceramic-coated aluminum or ceramic copper-clad thermal conductor. The step of soldering with the aluminum silicon carbon heat sink body.
  • the welding step Currently, vacuum welding technology is generally used in the art. Not only the process is complicated, the production cycle is long, bubbles are generated during the welding process, or the solder layer is uneven, and the solder layer is formed into voids having different shapes and sizes. The voids in the solder layer cause current-intensive effects, resulting in thermal breakdown, poor thermal conduction, etc., resulting in a decrease in package yield and a shortened service life.
  • An object of the present disclosure is to provide a heat dissipating component which has a good heat conduction effect, a simple structure, and a low processing process.
  • the present disclosure provides a heat dissipating component including a heat conductor and a heat dissipating body, the heat conductor being a ceramic aluminum coated heat conductor; the heat dissipating body being an aluminum silicon carbon heat dissipating body 1 At least one of the ceramic aluminum-clad heat conductors is integrally molded by aluminizing on the silicon-carbon heat-dissipating body 1.
  • the present disclosure further provides another heat dissipating component, the heat dissipating component includes a heat conductor and a heat dissipating body, the heat conductor is a ceramic aluminum coated heat conductor; the heat dissipating body is an aluminum silicon carbon heat dissipating body 1 , the aluminum silicon carbon
  • the heat dissipation body 1 includes a silicon carbide porous skeleton 10 and an aluminum layer coated on the surface of the silicon carbide porous skeleton 10;
  • the ceramic aluminum covered thermal conductor includes a ceramic insulating plate 2 and opposite surfaces provided on the ceramic insulating plate 2 a first aluminum layer 3 and a second aluminum layer 4; the first aluminum layer 3 is integrated with an aluminum layer coated on the surface of the silicon carbide porous frame 10, and the ceramic insulating plate 2 will be the second aluminum
  • the layer 4 is isolated from the first aluminum layer 3.
  • the heat dissipating component of the present disclosure has fewer voids than the heat dissipating component obtained by vacuum welding, and the heat dissipating component has higher strength, higher yield and longer service life.
  • the heat dissipating component has a thinner aluminum layer, which improves the heat conduction efficiency of the heat dissipating component; the lower hardness of the aluminum improves the thermal shock resistance of the heat dissipating component, and the bonding surface between the layers of the heat dissipating component provided by the present disclosure has no gap. It has higher joint strength and heat transfer efficiency.
  • the present disclosure also provides a method for preparing a heat dissipating component, the method comprising the following steps:
  • the silicon carbide porous skeleton 10 and the ceramic insulating sheet 2 are loaded into the mold 9, and the outer surface of the silicon carbide porous skeleton 10 and the inner wall of the ceramic insulating sheet 2 and the mold 9 have a first gap 6,
  • the ceramic insulating plate 2 and the inner wall of the mold 9 have a second gap 7; the first gap 6 and the second gap 7 communicate with each other;
  • the silicon carbide porous skeleton 10 after the surface is coated with aluminum forms an aluminum silicon carbon heat dissipation body 1 , and a part of the aluminum metal in the first gap 6 and the second gap 7 is removed by etching, so that the a first aluminum layer 3 is formed in the first gap 6, a second aluminum layer 4 is formed in the second gap 7, and the ceramic insulating sheet 2 isolates the second aluminum layer 4 from the first aluminum layer 3. .
  • the heat dissipating component preparation method provided by the present disclosure integrally produces a ceramic aluminum-clad thermal conductor by melting molten aluminum liquid or aluminum alloy liquid, and connects the ceramic aluminum-clad thermal conductor with the aluminum silicon carbon heat-dissipating body, and vacuum welding technology is adopted.
  • the preparation of the medium-ceramic aluminum-clad thermal conductor, the treatment of the aluminum-silicon carbon heat-dissipating body, and the welding of the ceramic-coated aluminum heat conductor and the aluminum-silicon carbon heat-dissipating body are combined into one step, which shortens the production cycle of the heat-dissipating component.
  • the present disclosure also provides a heat dissipating component prepared by the above method.
  • the present disclosure also provides an IGBT module including an IGBT circuit board and a heat dissipating component as described above.
  • FIG. 1 is a cross-sectional view showing the structure of a heat dissipating member
  • Figure 2 is a top plan view of a heat dissipating component having a ceramic insulating plate.
  • FIG 3 is a cross-sectional view of an aluminizing mold and its internal structure.
  • a first aspect of the present disclosure provides a heat dissipating component including a heat conductor and a heat dissipating body.
  • the heat conductor is a ceramic aluminum-clad heat conductor; the heat dissipation body is an aluminum silicon carbon heat dissipation body 1 .
  • the aluminum silicon carbon heat dissipating body 1 is integrally molded with one or more ceramic aluminum covered heat conductors by aluminizing.
  • the heat dissipating component of the present disclosure has fewer voids than the heat dissipating component obtained by vacuum welding, and the heat dissipating component has higher strength, higher yield and longer service life.
  • the heat dissipating component has a thinner aluminum layer, which improves the heat conduction efficiency of the heat dissipating component.
  • the lower hardness of the aluminum layer formed by the present application improves the thermal shock resistance of the heat dissipating component.
  • the bonding surface between the layers of the heat dissipating component provided by the present disclosure has no gap and has higher connection strength and heat conduction efficiency.
  • the aluminum silicon carbon heat dissipation body 1 includes a silicon carbide porous skeleton 10.
  • the aluminum silicon carbon heat dissipating body 1 includes a silicon carbide porous bobbin 10 and aluminum integrally bonded to the surface and inside of the silicon carbide porous bobbin 10 by integral molding.
  • the silicon carbide porous skeleton 10 is formed into an integrated structure with an aluminum layer by aluminizing, and the aluminum layer is coated on the surface of the silicon carbide porous skeleton 10.
  • the structural strength of the aluminum-silicon carbon heat-dissipating body 1 and its connection strength with the ceramic-coated aluminum heat conductor are enhanced.
  • the ceramic aluminum-clad heat conductor includes a ceramic insulating plate 2 and a first aluminum layer 3 formed on opposite surfaces of the ceramic insulating plate 2 and a second aluminum layer 4, and the first aluminum layer 3 is adjacent to the aluminum silicon carbon heat dissipation body 1 and combined with the aluminum silicon carbon heat dissipation body 1.
  • the first aluminum layer 3 is integrated with the aluminum layer on the surface of the aluminum silicon carbon heat dissipation body 1.
  • the ceramic aluminum-clad heat conductor comprises a ceramic insulating plate 2 and a first aluminum layer 3 and a second aluminum layer 4 disposed on opposite surfaces of the ceramic insulating plate 2, and the ceramic insulation
  • the first aluminum layer 3 integrally formed of the plate 2 by aluminizing is attached to the aluminum silicon carbon heat dissipation body 1.
  • the ceramic insulating sheet 2 isolates the second aluminum layer 4 from the first aluminum layer 3.
  • the first aluminum layer 3 is connected to the aluminum silicon carbon heat dissipating body 1 and the ceramic insulating plate 2, and the first aluminum layer 3 is integrated with the aluminum connecting the surface of the aluminum silicon carbon heat dissipating body 1 so as to be connected to the ceramic insulating board 2 and
  • the aluminum layer between the silicon carbide porous skeletons 10 has no voids and has better joint strength.
  • the second aluminum layer 4 may be etched to form a circuit for connecting one or more IGBT chips.
  • the surface of the aluminum silicon carbon heat dissipating body 1 to which the first aluminum layer 3 is joined is a flat surface.
  • the ceramic insulating plate 2 is one of an alumina ceramic plate, a toughened alumina ceramic plate, an aluminum nitride ceramic plate or a silicon nitride ceramic plate.
  • the flat surface of the aluminum silicon carbon heat dissipating body 1 facilitates the connection between the first aluminum layer 3 and the aluminum silicon carbon heat dissipating body 1 and is not easy to generate a gap.
  • the ceramic plate selected from the above materials has a lower density and a higher hardness, and has the use of an extended heat dissipation original.
  • the first aluminum layer 3 and the second aluminum layer 4 are respectively a pure aluminum layer or an aluminum alloy layer.
  • the first aluminum layer 3 has a thickness of 0.02 to 0.15 mm
  • the ceramic insulating plate 2 has a thickness of 0.25 to 1 mm
  • the second aluminum layer 4 has a thickness of 0.2 to 1.0 mm.
  • the hardness of the aluminum layer or the aluminum alloy layer formed by the present application is lower than that of the metal layer formed by welding, and the thermal shock resistance is superior, and the aluminum layer of the above thickness and the ceramic insulating plate 2 of the above thickness can improve the ceramic.
  • the heat dissipation efficiency and structural strength of the aluminum-clad thermal conductor prolong the service life.
  • the ceramic insulating plate 2 may be provided in one number with respect to the same piece of the aluminum silicon carbon heat dissipating body 1.
  • a first aluminum layer 3 and a second aluminum layer 4 are respectively disposed on two opposite surfaces of the ceramic insulating plate 2.
  • the number of the ceramic insulating plates 2 is plural, and the number of the first aluminum layers 3 and the second aluminum layers 4 are respectively insulated from the ceramics, with respect to the same aluminum-silicon heat-dissipating body 1.
  • the number of boards 2 is the same. That is, the first aluminum layer 3 and the second aluminum layer 4 are respectively disposed on the opposite surfaces of each of the ceramic insulating sheets 2.
  • the different ceramic insulating sheets 2 and the first aluminum layer 3 and the second aluminum layer 4 disposed thereon can satisfy different heat dissipation design requirements.
  • the aluminum silicon carbon heat dissipating body 1 is further provided with one or more heat dissipating columns 5.
  • One end of the heat dissipation column 5 is fixedly connected to the aluminum silicon carbon heat dissipation body 1 , and the other end of the heat dissipation column 5 is a free end.
  • the heat dissipation column 5 can further conduct heat emitted by the IGBT module to improve heat dissipation efficiency.
  • the heat dissipating post 5 and the ceramic aluminum clad heat conductor are respectively disposed on opposite surfaces of the aluminum silicon carbon heat dissipating body 1.
  • the heat dissipation column 5 is at least one of an aluminum column, an aluminum alloy column, and an aluminum copper-clad column; the heat dissipation column 5 adopts the above structure to simplify the production process and shorten the production cycle.
  • the heat dissipation post 5 is integrally formed on the aluminum silicon carbon heat dissipation body 1 by aluminizing.
  • the integral molding described herein means that the first metal layer 3, the second metal layer 4, the aluminum layer on the surface of the aluminum silicon carbon heat dissipation body 1 and the aluminum layer of the heat dissipation column 5 are simultaneously formed by the same material, and the A metal layer 3, an aluminum layer on the surface of the aluminum silicon carbon heat dissipating body 1 and an aluminum layer of the heat dissipating post 5 are integrated.
  • the heat-insulating column 5, the aluminum-silicon carbon heat-dissipating body 1 and the first metal layer 3 have a higher connection strength, which enhances the structural strength of the heat-dissipating element and prolongs the service life. At the same time, heat transfer efficiency is higher.
  • a second aspect of the present disclosure provides a method of fabricating a heat dissipating component. As shown in FIG. 3, the method includes the following steps:
  • the silicon carbide porous skeleton 10 and the ceramic insulating plate 2 are loaded into the mold 9, and a first gap 6 is formed between the silicon carbide porous skeleton 10 and the ceramic insulating sheet 2, and the ceramic insulating sheet 2 is There is a second gap 7 between the walls of the aluminizing mold 9.
  • the first void 6 includes a gap between the silicon carbide porous skeleton 10 and the side wall of the mold 9, and an aluminum layer for forming the surface of the silicon carbide porous skeleton 10. Thereby, an aluminum silicon carbon heat dissipation body 1 is formed.
  • the first gap 6 and the second gap 7 are in communication with each other.
  • the first metal layer 3, the second metal layer 4, and the metal layer on the surface of the aluminum-silicon heat-dissipating body 1 formed in steps S1 and S2 are integrally formed.
  • the heat dissipating component preparation method provided by the present disclosure integrally produces a ceramic aluminum-clad thermal conductor by molten aluminum liquid or aluminum alloy liquid, and integrally connects the ceramic aluminum-clad thermal conductor with the heat dissipating body, and vacuum welding
  • the preparation of the ceramic aluminum-clad thermal conductor, the treatment of the heat-dissipating body, and the welding of the ceramic-coated aluminum heat conductor and the heat-dissipating body are combined into one step, which shortens the production cycle of the heat-dissipating component.
  • the integrated structure of the metal aluminum layer has higher heat dissipation efficiency, stronger structural strength and better resistance to thermal shock.
  • the pressure casting condition includes: the temperature of the preheating mold 9 is 500-700 ° C; the temperature of the molten aluminum liquid is 500-700 ° C, the pressure of vacuuming is 50-100 Pa, pressurized The pressure is 4-10 MPa.
  • the molten aluminum liquid is pure aluminum or an aluminum alloy.
  • the pressure aluminizing integral molding under the conditions can reduce the voids in the first aluminum layer 3, the second aluminum layer 4, the metal layer on the surface of the aluminum silicon carbon heat dissipation body 1 and the metal layer of the heat dissipation column 5, thereby improving the production quality and the yield rate. .
  • At least one outwardly projecting columnar recess 8 is formed on an inner surface of the aluminizing mold 9, and the columnar recess 8 is adapted to form at least one connected to the silicon carbide porous bobbin 10. Heat sink 5 .
  • the method can complete the connection of the heat dissipating post 5 to the aluminum layer on the surface of the aluminum silicon carbon heat dissipating body 1 at one time, avoiding the subsequent soldering of the heat dissipating post 5, and improving the connection stability between the heat dissipating post 5 and the aluminum silicon carbon heat dissipating body 1.
  • the heat dissipation column 5 and the aluminum layer on the surface of the aluminum silicon carbon heat dissipation body 1 and the first metal layer 3 are integrated, which increases the structural strength and heat dissipation efficiency of the heat dissipation original.
  • the ceramic insulating plate 2 is an alumina ceramic plate, a toughened alumina ceramic plate, an aluminum nitride ceramic plate or a silicon nitride ceramic plate;
  • the first aluminum layer 3 has a thickness of 0.02 ⁇ 0.15mm
  • the ceramic insulating plate 2 has a thickness of 0.25 to 1 mm
  • the second aluminum layer 4 has a thickness of 0.2 to 1 mm;
  • the ceramic plate of the above material has a lower density and a higher hardness, and is used for extended use. Lifetime; the use of the thickness of the aluminum layer and the ceramic insulating plate 2 may improve the efficiency and structural strength of the ceramic aluminum-clad thermal conductor and prolong the service life.
  • the above different ceramic insulating sheets 2 and the first aluminum layer 3 and the second aluminum layer 4 are arranged to meet different heat dissipation design requirements.
  • the etching may employ various methods conventionally used by those skilled in the art, and the parameters may be conventionally used parameters, for example, the etching operation includes sequential filming, exposure, development, etching, film removal, and water washing. step.
  • the effect of the etching is to remove the connection portion between the first metal layer 3 and the second metal layer 4 in the intermediate product formed in steps S1 and S2 to isolate the first metal layer 3 and the second metal layer 4 from each other.
  • a third aspect of the present disclosure provides a heat dissipating member prepared according to the production method of the second aspect of the present disclosure.
  • a fourth aspect of the present disclosure provides an IGBT module including an IGBT circuit board and a heat dissipating component as described above.
  • This embodiment is for explaining a method of preparing a heat dissipating member.
  • a silicon carbide porous skeleton 10 having a thickness of 4.5 mm, a length of 215 mm, a width of 110 mm, and an alumina ceramic insulating sheet 2 having a thickness of 0.38 mm, a length of 207 mm, and a width of 77 mm are loaded into the mold 9, and the The silicon carbide porous skeleton 10 and the ceramic insulating sheet 2 have a first gap 6 of 0.1 mm and the ceramic insulating sheet 2 and the wall of the aluminizing mold 9 have a second gap 7 of 0.5 mm. There is also a third gap 8 between the wall of the aluminizing mold 9 and the silicon carbide porous skeleton 10 for forming the heat dissipation column 5.
  • the third gap 8 has a comb shape, and the tooth protrusions having a length of 8 mm are used to form the heat dissipation posts 5, and each of the tooth protrusions is spaced apart from each other by 0.8 mm.
  • the silicon carbide porous skeleton 10 and the side wall of the mold 9 have corresponding voids for forming an aluminum layer on the surface of the aluminum silicon carbon heat dissipation body 1.
  • the silicon carbide porous skeleton 10 forms aluminum-silicon heat-dissipating body 1 with aluminum bonded to the surface and the inside thereof.
  • the film is etched, a part of the aluminum metal in the first gap 6 and the second gap 7 is removed, so that the remaining aluminum metal in the first gap 6 forms a first aluminum layer 3 having a thickness of 0.1 mm.
  • the remaining aluminum metal in the two voids 7 forms a second aluminum layer 4 having a thickness of 0.5 mm, and the ceramic insulating sheet 2 isolates the second aluminum layer 4 from the first aluminum layer 3; the first aluminum The layer 3 and the second aluminum layer 4 have a distance of 5 mm from the edge of the ceramic insulating plate 2.
  • This embodiment is for explaining a method of preparing a heat dissipating member.
  • a silicon carbide porous skeleton 10 having a thickness of 4.5 mm, a length of 215 mm, a width of 110 mm, and a toughened alumina ceramic insulating sheet 2 having a thickness of 0.32 mm, a length of 207 mm, and a width of 77 mm are placed in the aluminizing mold 9, And having a first gap 6 of 0.1 mm between the silicon carbide porous skeleton 10 and the ceramic insulating sheet 2 and a second gap of 0.5 mm between the ceramic insulating sheet 2 and the wall of the aluminizing mold 9 7; a third gap 8 is formed between the wall of the aluminizing die 9 and the silicon carbide porous skeleton 10 for forming the heat dissipation column 5; the third gap 8 has a comb shape, and the tooth length is 8 mm.
  • the protrusions are used to form the heat dissipating post 5, and each of the flutes is spaced apart from each other by 0.8 mm.
  • the silicon carbide porous skeleton 10 and the side wall of the mold 9 have corresponding voids for forming an aluminum layer on the surface of the aluminum silicon carbon heat dissipation body 1.
  • the silicon carbide porous skeleton 10 forms aluminum-silicon heat-dissipating body 1 with aluminum bonded to the surface and the inside thereof.
  • the remaining aluminum metal in the first gap 6 forms a first aluminum layer 3 having a thickness of 0.1 mm.
  • the remaining aluminum metal in the two voids 7 forms three second aluminum layers 4 spaced apart from each other by a thickness of 0.5 mm, and the ceramic insulating sheet 2 isolates the second aluminum layer 4 from the first aluminum layer 3;
  • the second aluminum layers 4 have a spacing of 5 mm from each other; the first aluminum layer 3 and the second aluminum layer 4 have a distance of 5 mm from the edge of the ceramic insulating sheet 2.
  • This embodiment is for explaining a method of preparing a heat dissipating member.
  • a silicon carbide porous skeleton 10 having a thickness of 4.5 mm, a length of 215 mm, a width of 110 mm, and two alumina ceramic insulating sheets 2 having a thickness of 0.38 mm, a length of 101 mm, and a width of 77 mm are loaded into the aluminizing mold 9, wherein Two alumina ceramic insulating sheets 2 are spaced apart from each other, and have a first gap 6 of 0.1 mm between the silicon carbide porous skeleton 10 and the ceramic insulating sheet 2, and the ceramic insulating sheet 2 and the aluminizing mold There is a second gap 7 between the walls of 9; a gap of 5 mm between the two ceramic insulating plates 2; and a third gap 8 between the wall of the aluminizing mold 9 and the porous silicon carbide skeleton 10,
  • the heat dissipation column 5 is formed; the third gap 8 has a comb shape, and the tooth protrusions having a length of 8 mm are used
  • the silicon carbide porous skeleton 10 forms aluminum-silicon heat-dissipating body 1 with aluminum bonded to the surface and the inside thereof.
  • first aluminum layer 3 having a thickness of 0.1 mm.
  • the remaining aluminum metal in the two voids 7 forms two second aluminum layers 4 having a thickness of 0.5 mm spaced apart from each other, and the ceramic insulating sheet 2 isolates the second aluminum layer 4 from the first aluminum layer 3;
  • the first aluminum layer 3 and the second aluminum layer 4 have a distance of 5 mm from the edge of the ceramic insulating plate 2.
  • the silicon carbide particles are mixed with the aluminum powder and then subjected to cold press forming, hot pressing, annealing and heat preservation to obtain an aluminum silicon carbon heat dissipating body.
  • the ceramic copper-clad thermal conductor is preheated by SnPbAg solder under a hydrogen atmosphere at 185 ° C, and soldered to the aluminum silicon carbon heat dissipation body at 265 ° C to obtain the comparative heat dissipating component; the ceramic copper clad heat conductor comprises a thickness of 0.32 mm.
  • the obtained heat dissipating component was placed in an ice water mixture, and after 30 minutes, the heat dissipating component was taken out from the ice water mixture (continuously adding ice cubes and kept at 0 ° C environment), and the heat dissipating was allowed to stand at room temperature for 10 minutes.
  • the component was placed in a 150 ° C oven, and the heat dissipating component was taken out of the oven after being held at 150 ° C for 30 minutes.
  • the IGBT was again placed in the ice water mixture with the heat sink base plate (continuously adding ice In the block, which maintains the 0°C environment, the above process is a cycle.
  • the above-mentioned cold heat and impact resistance properties were measured for each of the 20 heat dissipating components in each group, and the aluminum layer of the sample to be measured was observed every 20 cycles (appearance detection, such as cracking and peeling), when to be determined Stopping the test of the sample to be tested when there is a significant crack in the aluminum layer of the sample, stopping the test, recording the number of times of the above-mentioned cycles experienced before, and the 20 heat-receiving elements to be determined in each group are subjected to the test in the test. The number of cycles was averaged, and the measurement results of the above-described respective groups of heat dissipating elements are shown in Table 1.

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Abstract

公开了散热元件及其制备方法和IGBT模组；所述散热元件包括导热体和散热本体，所述导热体为陶瓷覆铝导热体；所述散热本体为铝硅碳散热本体；所述铝硅碳散热本体上通过渗铝一体成型地结合有至少一个陶瓷覆铝导热体；还公开了上述散热元件的制备方法及含有上述散热元件的IGBT模组。

Description

散热元件及其制备方法和IGBT模组 技术领域
本公开涉及散热器技术领域，具体地，涉及散热元件及其制备方法和IGBT模组。
背景技术
IGBT(Insulated Gate Bipolar Transistor)是一种由双极型三极管和绝缘栅型场效应管组成的复合全控型电压驱动式功率半导体器件，广泛应用于各种电子设备上。随着变频器等高电流电子设备的发展，对于IGBT芯片的性能提出了更高的要求，IGBT芯片承受更高的电流，其工作时产生的热量不断增加。现有IGBT芯片直接封装采用真空焊接技术，封装的过程共包括3个工艺步骤：陶瓷覆铝或陶瓷覆铜导热体的制备、铝硅碳散热本体的处理和陶瓷覆铝或陶瓷覆铜导热体与铝硅碳散热本体之间焊接的步骤。所述焊接步骤本领域目前通常采用真空焊接技术，不仅工艺复杂，生产周期长，焊接过程中产生气泡或者焊料层不均匀都会使焊层形成形状大小不同的空洞。焊层中的空洞会引发电流密集效应导致热电击穿、热传导不良等，使其封装良品率下降，并且使用寿命缩短。
因此亟需一种新的散热装置克服现有技术中真空焊接的缺陷，得到热传导效果和稳定性更好的散热装置。
发明内容
本公开的目的是提供一种散热元件，该散热元件具有良好的热传导效果，结构简单，加工工艺难度低。
为了实现上述目的，本公开提供一种散热元件，所述散热元件包括导热体和散热本体，所述导热体为陶瓷覆铝导热体；所述散热本体为铝硅碳散热本体1，所述铝硅碳散热本体1上通过渗铝一体成型地结合有至少一个所述陶瓷覆铝导热体。
本公开还提供了另一种散热原件，所述散热元件包括导热体和散热本体，所述导热体为陶瓷覆铝导热体；所述散热本体为铝硅碳散热本体1，所述铝硅碳散热本体1包括碳化硅多孔骨架10和包覆在碳化硅多孔骨架10表面的铝层；所述陶瓷覆铝导热体包括陶瓷绝缘板2和设置在所述陶瓷绝缘板2的相对的两个表面上的第一铝层3和第二铝层4；所述第一 铝层3与包覆在碳化硅多孔骨架10表面的铝层为一体结构，所述陶瓷绝缘板2将所述第二铝层4与所述第一铝层3隔离。
通过上述技术方案，本公开所述的散热元件与真空焊接得到的散热元件相比金属层具有更少的空洞，散热元件的强度更高，良品率更高，延长了使用寿命。该散热元件具有更薄的铝层，提高了散热元件的导热效率；铝的硬度较低提高了散热元件的耐冷热冲击性能，本公开提供的散热元件各层面之间的结合面无空隙，具有更高的连接强度和热传导效率。
本公开还提供了一种散热元件的制备方法，该方法包括如下步骤：
S1.将碳化硅多孔骨架10和陶瓷绝缘板2装入模具9，并使得所述碳化硅多孔骨架10的外表面与所述陶瓷绝缘板2和模具9的内壁之间具有第一空隙6，所述陶瓷绝缘板2与所述模具9的内壁之间具有第二空隙7；所述第一空隙6和第二空隙7相互连通；
S2.在压力铸渗条件下，向被预热的所述模具9内注入熔融铝液以填充至所述第一空隙6和所述第二空隙7中并进行抽真空和加压，然后进行冷却脱模；
S3.表面包覆有铝后的所述碳化硅多孔骨架10形成铝硅碳散热本体1，通过蚀刻去除所述第一空隙6和所述第二空隙7中的部分铝金属，以使得所述第一空隙6中形成第一铝层3，所述第二空隙7中形成第二铝层4，且所述陶瓷绝缘板2将所述第二铝层4与所述第一铝层3隔离。
通过上述技术方案，本公开提供的散热元件制备方法通过熔融的铝液或者铝合金液一体成型生产陶瓷覆铝导热体并将陶瓷覆铝导热体与铝硅碳散热本体连接起来，将真空焊接技术中陶瓷覆铝导热体的制备、铝硅碳散热本体的处理和陶瓷覆铝导热体与铝硅碳散热本体的焊接3个步骤合为一个步骤，缩短了散热元件的生产周期。
本公开还提供了上述方法制备得到的散热元件。
本公开还提供了一种IGBT模组，该IGBT模组包括IGBT电路板和如上所述的散热元件。
本公开的其他特征和优点将在随后的具体实施方式部分予以详细说明。
附图说明
附图是用来提供对本公开的进一步理解，并且构成说明书的一部分，与下面的具体实 施方式一起用于解释本公开，但并不构成对本公开的限制。在附图中：
图1是散热元件结构剖视图。
图2是具有一块陶瓷绝缘板的散热元件俯视图。
图3是渗铝模具及其内部结构剖视图。
附图标记说明
1    铝硅碳散热本体          2     陶瓷绝缘板
3    第一铝层                4     第二铝层
5    散热柱                  6     第一空隙
7    第二空隙                8     第三空隙
9    渗铝模具                10    碳化硅多孔骨架
具体实施方式
以下结合附图对本公开的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本公开，并不用于限制本公开。
如图1所示，本公开第一方面提供了一种散热元件，该散热元件包括导热体和散热本体。所述导热体为陶瓷覆铝导热体；所述散热本体为铝硅碳散热本体1。所述铝硅碳散热本体1上通过渗铝一体成型地结合有一个或多个陶瓷覆铝导热体。
通过上述技术方案，本公开所述的散热元件与真空焊接得到的散热元件相比金属层具有更少的空洞，散热元件的强度更高，良品率更高，延长了使用寿命。该散热元件具有更薄的铝层，提高了散热元件的导热效率。本申请形成的铝层的硬度较低提高了散热元件的耐冷热冲击性能，本公开提供的散热元件各层面之间的结合面无空隙，具有更高的连接强度和热传导效率。
根据本公开第一方面，所述铝硅碳散热本体1包括碳化硅多孔骨架10。具体地，铝硅碳散热本体1包括碳化硅多孔骨架10和通过渗铝一体成型的结合在所述碳化硅多孔骨架10表面和内部的铝。所述碳化硅多孔骨架10通过渗铝与铝层形成一体化结构，所述铝层包覆在所述碳化硅多孔骨架10的表面。从而增强所述铝硅碳散热本体1的结构强度及其与陶瓷覆铝导热体的连接强度。
根据本公开第一方面，如图1-2所示，所述陶瓷覆铝导热体包括陶瓷绝缘板2和形成在所述陶瓷绝缘板2的相对的两个表面上的第一铝层3和第二铝层4，且所述第一铝层3邻近所述铝硅碳散热本体1并与所述铝硅碳散热本体1结合。具体的，所述第一铝层3与铝硅碳散热本体1表面的铝层结合为一体。换句话说，所述陶瓷覆铝导热体包括陶瓷绝缘板2和设置于所述陶瓷绝缘板2的相对的两个表面上的第一铝层3和第二铝层4，并且所述陶瓷绝缘板2通过渗铝一体成型的所述第一铝层3连接在所述铝硅碳散热本体1上。所述陶瓷绝缘板2将所述第二铝层4与所述第一铝层3隔离。所述第一铝层3连接铝硅碳散热本体1和陶瓷绝缘板2，所述第一铝层3与连接铝硅碳散热本体1表面的铝结合为一体，这样连接在陶瓷绝缘板2和碳化硅多孔骨架10之间的铝层没有空洞，具有更好的连接强度。所述第二铝层4上可以蚀刻形成电路，用于连接一个或多个IGBT芯片。
根据本公开第一方面，所述铝硅碳散热本体1与所述第一铝层3相连接的表面为平整表面。所述陶瓷绝缘板2为氧化铝陶瓷板、增韧氧化铝陶瓷板、氮化铝陶瓷板或氮化硅陶瓷板中的一种。所述铝硅碳散热本体1平整表面有利于第一铝层3与铝硅碳散热本体1之间的连接，不易产生缝隙。选用上述材质的陶瓷板具有较低的密度和较高的硬度，有利用延长散热原件的使用寿命。
根据本公开第一方面，所述第一铝层3和所述第二铝层4分别为纯铝层或铝合金层。所述第一铝层3的厚度为0.02～0.15mm，所述陶瓷绝缘板2的厚度为0.25～1mm，所述第二铝层4的厚度为0.2～1.0mm。本申请形成的铝层或铝合金层的硬度相比焊接形成的金属层的硬度较低，耐冷热冲击性能更优越，同时采用上述厚度的铝层和上述厚度的陶瓷绝缘板2能够提高陶瓷覆铝导热体的散热效率与结构强度，延长使用寿命。
根据本公开第一方面，相对于同一块所述铝硅碳散热本体1，所述陶瓷绝缘板2的设置数量可以为一个。所述陶瓷绝缘板2两个相对表面上分别设置有第一铝层3和第二铝层4。
或者，相对于同一块所述铝硅碳散热本体1，所述陶瓷绝缘板2的设置数量为多个，所述第一铝层3和第二铝层4的设置数量分别与所述陶瓷绝缘板2的数量相同。也就是说，每个陶瓷绝缘板2的两个相对表面上分别设置有第一铝层3和第二铝层4。
当所述陶瓷绝缘板2为多个时，不同的陶瓷绝缘板2与其上设置的第一铝层3和第二铝层4可以满足不同的散热设计需求。
根据本公开第一方面，如1所示，所述铝硅碳散热本体1上还设置有一个或多个散热 柱5。所述散热柱5的一端与铝硅碳散热本体1固定连接，散热柱5的另一端为自由端。所述散热柱5可以进一步传导IGBT模组所散发出的热量，提高散热效率。
根据本公开第一方面，所述散热柱5与所述陶瓷覆铝导热体分别设置在所述铝硅碳散热本体1的相对的两个表面上。所述散热柱5为铝柱、铝合金柱和铝覆铜柱中的至少一种；所述散热柱5采用上述结构可以简化生产工艺，缩短生产周期。
根据本公开第一方面，所述散热柱5通过渗铝一体成型地连接在所述铝硅碳散热本体1上。这里所述的一体成型是指所述第一金属层3、第二金属层4、铝硅碳散热本体1表面的铝层和散热柱5的铝层采用相同的材料同时成型，且所述第一金属层3、铝硅碳散热本体1表面的铝层和散热柱5的铝层为一个整体。一体成型的散热柱5、铝硅碳散热本体1和第一金属层3之间的连接强度更高，增强散热原件整体的结构强度，延长使用寿命。同时热传导效率更高。
本公开第二方面提供了一种散热元件的制备方法，如图3所示，该方法包括如下步骤：
S1.将碳化硅多孔骨架10和陶瓷绝缘板2装入模具9，并使得所述碳化硅多孔骨架10与所述陶瓷绝缘板2之间具有第一空隙6，所述陶瓷绝缘板2与所述渗铝模具9的壁之间具有第二空隙7。
S2.在压力铸渗条件下，将熔融铝液加入被预热的所述模具9内并填充至所述第一空隙6和所述第二空隙7中并且进行抽真空和加压的操作，然后进行冷却脱模。
S3.通过蚀刻去除所述第一空隙6和所述第二空隙7之间连接部分铝金属，以使得所述第一空隙6中的剩余铝金属形成第一铝层3而所述第二空隙7中的剩余铝金属形成第二铝层4，且所述陶瓷绝缘板2将所述第二铝层4与所述第一铝层3隔离。
在上述方法中，应当理解的是，如图3所示，第一空隙6包括所述碳化硅多孔骨架10与模具9侧壁之间的空隙，用于形成碳化硅多孔骨架10表面的铝层，从而形成铝硅碳散热本体1。所述第一空隙6和第二空隙7互相连通。这样步骤S1和S2所形成的第一金属层3、第二金属层4和铝硅碳散热本体1表面的金属层为一体结构。
通过上述技术方案，本公开提供的散热元件制备方法通过熔融的铝液或者铝合金液一体成型生产陶瓷覆铝导热体，并将陶瓷覆铝导热体与散热本体一体成型地连接起来，将真空焊接技术中陶瓷覆铝导热体的制备、散热本体的处理和陶瓷覆铝导热体与散热本体的焊 接3个步骤合为一个步骤，缩短了散热元件的生产周期。同时，一体结构的金属铝层散热效率更高，结构强度更强，耐冷热冲击性能更好。
根据本公开第二方面，所述压力铸渗条件包括：预热模具9的温度为500-700℃；熔融铝液的温度为500-700℃，抽真空的压力为50-100Pa，加压的压力为4-10MPa。所述熔融铝液为纯铝或铝合金。所述条件下进行压力渗铝一体成型可以减少第一铝层3、第二铝层4、铝硅碳散热本体1表面的金属层以及散热柱5金属层中的空洞，提高生产质量与良品率。
根据本公开第二方面，所述渗铝模具9的一个内表面上形成有至少一个向外突出的柱状凹陷8，所述柱状凹陷8适于形成与所述碳化硅多孔骨架10相连的至少一个散热柱5。换句话说，所述碳化硅多孔骨架10的下部与所述渗铝模具9的内壁之间还具有第三空隙8，所述第三空隙8用于形成至少一个散热柱5。所述方法可以使散热柱5形成与铝硅碳散热本体1表面的铝层连接一次完成，避免后续焊接散热柱5，提高了散热柱5与铝硅碳散热本体1之间的连接稳固性。同时，散热柱5与铝硅碳散热本体1表面的铝层以及第一金属层3为一个整体，增加了散热原件的结构强度和散热效率。
根据本公开第二方面，所述陶瓷绝缘板2为氧化铝陶瓷板、增韧氧化铝陶瓷板、氮化铝陶瓷板或氮化硅陶瓷板；所述第一铝层3的厚度为0.02～0.15mm，所述陶瓷绝缘板2的厚度为0.25～1mm，所述第二铝层4的厚度为0.2～1mm；上述材质的陶瓷板具有较低的密度和较高的硬度，有利用延长使用寿命；采用所述厚度的铝层与陶瓷绝缘板2可能提高陶瓷覆铝导热体的效率与结构强度，延长使用寿命。
上述不同的陶瓷绝缘板2与第一铝层3和第二铝层4的设置可以满足不同的散热设计需求。
根据本公开第二方面，蚀刻可以采用本领域技术人员常规使用的各种方法，参数可以为常规使用的参数，例如蚀刻的操作包括依次进行的贴膜、曝光、显影、腐蚀、去膜和水洗的步骤。所述蚀刻的作用是去除步骤S1和S2形成的中间产品中的第一金属层3和第二金属层4之间连接部分，以使第一金属层3和第二金属层4相互隔离。
本公开第三方面提供了根据本公开第二方面所述的制备方法制备得到的散热元件。
本公开第四方面提供了一种IGBT模组，该IGBT模组包括IGBT电路板和如上所述的散热元件。
下面通过实施例进一步说明本公开，但是本公开并不因此受到任何限制。
实施例1
本实施例用于说明散热元件的制备方法。
将厚度为4.5mm、长为215mm、宽为110mm的碳化硅多孔骨架10和1个厚度为0.38mm、长为207mm、宽为77mm的氧化铝陶瓷绝缘板2装入模具9，并使得所述碳化硅多孔骨架10与所述陶瓷绝缘板2之间具有0.1mm的第一空隙6且所述陶瓷绝缘板2与所述渗铝模具9的壁之间具有0.5mm第二空隙7。所述渗铝模具9壁与碳化硅多孔骨架10之间还具有第三空隙8，用于形成散热柱5。所述第三空隙8呈梳齿状，所述长为8mm的齿状突起用于形成散热柱5，所述每个齿状突起彼此之间的间隔为0.8mm。所述碳化硅多孔骨架10与模具9的侧壁之间具有相应的空隙用于形成铝硅碳散热本体1表面的铝层。
预热所述渗铝模具9使其温度为600℃，向所述渗铝模具9中加入700℃的熔融铝液，抽真空至渗铝模具9内压力为80Pa，然后加压至压力为7Mpa，待所述铝液冷却至室温定型后脱模，所述碳化硅多孔骨架10与结合在其表面和内部的铝形成铝硅碳散热本体1。
贴膜后蚀刻去除所述第一空隙6和所述第二空隙7中的部分铝金属，使得所述第一空隙6中的剩余铝金属形成厚度为0.1mm的第一铝层3而所述第二空隙7中的剩余铝金属形成厚度为0.5mm的第二铝层4，且所述陶瓷绝缘板2将所述第二铝层4与所述第一铝层3隔离；所述第一铝层3和第二铝层4与陶瓷绝缘板2的边缘之间具有5mm的距离。
蚀刻完成后得到本实施例所述的散热元件。
实施例2
本实施例用于说明散热元件的制备方法。
将厚度为4.5mm、长为215mm、宽为110mm的碳化硅多孔骨架10和1个厚度为0.32mm、长为207mm、宽为77mm的增韧氧化铝陶瓷绝缘板2装入渗铝模具9，并使得所述碳化硅多孔骨架10与所述陶瓷绝缘板2之间具有0.1mm的第一空隙6且所述陶瓷绝缘板2与所述渗铝模具9的壁之间具有0.5mm第二空隙7；所述渗铝模具9壁与碳化硅多孔骨架10之间还具有第三空隙8，用于形成散热柱5；所述第三空隙8呈梳齿状，所述长为8mm的齿状突起用于形成散热柱5，所述每个齿状突起彼此之间的间隔为0.8mm。所述碳化硅多孔骨架10与模具9的侧壁之间具有相应的空隙用于形成铝硅碳散热本体1表面的铝层。
预热所述渗铝模具9使其温度为600℃，向所述渗铝模具9中加入700℃的熔融铝液， 抽真空至渗铝模具9内压力为80Pa，然后加压至压力为7Mpa，待所述铝液冷却至室温定型后脱模，所述碳化硅多孔骨架10与结合在其表面和内部的铝形成铝硅碳散热本体1。
贴膜后蚀刻去除所述第一空隙6和所述第二空隙7中的部分铝金属，使得所述第一空隙6中的剩余铝金属形成厚度为0.1mm的第一铝层3而所述第二空隙7中的剩余铝金属形成3个彼此间隔的厚度为0.5mm的第二铝层4，且所述陶瓷绝缘板2将所述第二铝层4与所述第一铝层3隔离；所述第二铝层4彼此之间具有5mm的间隔；所述第一铝层3和第二铝层4与陶瓷绝缘板2的边缘之间具有5mm的距离。
蚀刻完成后得到本实施例所述的散热元件。
实施例3
本实施例用于说明散热元件的制备方法。
将厚度为4.5mm、长为215mm、宽为110mm的碳化硅多孔骨架10和2个厚度为0.38mm、长为101mm、宽为77mm的氧化铝陶瓷绝缘板2装入渗铝模具9，其中的2个氧化铝陶瓷绝缘板2彼此间隔，并使得所述碳化硅多孔骨架10与所述陶瓷绝缘板2之间具有0.1mm的第一空隙6且所述陶瓷绝缘板2与所述渗铝模具9的壁之间具有0.5mm第二空隙7；所述2个陶瓷绝缘板2之间具有5mm的间隔；所述渗铝模具9壁与碳化硅多孔骨架10之间还具有第三空隙8，用于形成散热柱5；所述第三空隙8呈梳齿状，所述长为8mm的齿状突起用于形成散热柱5，所述每个齿状突起彼此之间的间隔为0.8mm。所述碳化硅多孔骨架10与模具9的侧壁之间具有相应的空隙用于形成铝硅碳散热本体1表面的铝层。
预热所述渗铝模具9使其温度为600℃，向所述渗铝模具9中加入700℃的熔融铝液，抽真空至渗铝模具9内压力为80Pa，然后加压至压力为7Mpa，待所述铝液冷却至室温定型后脱模，所述碳化硅多孔骨架10与结合在其表面和内部的铝形成铝硅碳散热本体1。
贴膜后蚀刻去除所述第一空隙6和所述第二空隙7中的部分铝金属，使得所述第一空隙6中的剩余铝金属形成厚度为0.1mm的第一铝层3而所述第二空隙7中的剩余铝金属形成2个彼此间隔的厚度为0.5mm的第二铝层4，且所述陶瓷绝缘板2将所述第二铝层4与所述第一铝层3隔离；所述第一铝层3和第二铝层4与陶瓷绝缘板2的边缘之间具有5mm的距离。
蚀刻完成后得到本实施例所述的散热元件。
对比例1
将碳化硅颗粒与铝粉混合后经过冷压成型、热压、退火和保温制备得到铝硅碳散热本体。
将陶瓷覆铜导热体采用SnPbAg焊料于氢气气氛下185℃预热，265℃焊接至所述铝硅碳散热本体制备得到本对比例散热元件；所述陶瓷覆铜导热体包括厚度为0.32mm的增韧氧化铝陶瓷绝缘板，和位于其相对的两个表面上的厚度为0.3mm铜片，所述铜片氧化焊接于所述陶瓷绝缘板的相对的两个表面上。
测试实施例1
对实施例1-3与对比例1中得到的散热元件进行冷热循环试验。
将获得的散热元件放入冰水混合物中，30分钟后将所述散热元件从冰水混合物(持续添加冰块，保持0℃环境)中拿出，在室温下放置10分钟后将所述散热元件放入150℃烘箱中，在150℃中保持30分钟后将所述散热元件从烘箱中取出，在室温下放置10分钟后将所述IGBT用散热底板再次放入冰水混合物(持续添加冰块，保持0℃环境)中，上述过程为一个循环。对每组中的20个散热元件分别进行上述的耐冷耐热抗冲击性能测定，每20个所述循环观察一次待测定样品的铝层情况(外观检测，例如裂纹和脱落情况)，当待测定样品铝层出现明显裂纹有脱落倾向时停止对该待测定样品停止试验，记录其之前所经历的上述循环的次数，并且对每组中的20个待测定散热元件在试验中所经历的所述循环的次数求平均数，上述的各组散热元件的测定结果如表1所示。
表1
100次循环后外观 耐冷热冲击次数
实施例1 良好 200
实施例2 良好 500
实施例3 良好 200
对比例1 线路槽出现裂纹 100
经表1中实施例1-3与对比例1比较可以看出，本公开制备得到的散热元件具有更优 越的耐冷热冲击性能，具有更高的连接强度和热传导效率。
以上结合附图详细描述了本公开的优选实施方式，但是，本公开并不限于上述实施方式中的具体细节，在本公开的技术构思范围内，可以对本公开的技术方案进行多种简单变型，这些简单变型均属于本公开的保护范围。
另外需要说明的是，在上述具体实施方式中所描述的各个具体技术特征，在不矛盾的情况下，可以通过任何合适的方式进行组合。为了避免不必要的重复，本公开对各种可能的组合方式不再另行说明。
此外，本公开的各种不同的实施方式之间也可以进行任意组合，只要其不违背本公开的思想，其同样应当视为本公开所公开的内容。

Claims (22)

  1. 一种散热元件，所述散热元件包括导热体和散热本体，其特征在于，
    所述导热体为陶瓷覆铝导热体；
    所述散热本体为铝硅碳散热本体(1)，所述铝硅碳散热本体(1)上通过渗铝一体成型地结合有至少一个所述陶瓷覆铝导热体。
  2. 根据权利要求1所述的散热元件，其中，所述铝硅碳散热本体(1)为表面包覆有铝层的碳化硅多孔骨架(10)。
  3. 根据权利要求2所述的散热元件，其中，所述铝层是通过渗铝一体成型结合在所述碳化硅多孔骨架(12)表面的。
  4. 根据权利要求1-3任一项所述的散热元件，其中，所述陶瓷覆铝导热体包括陶瓷绝缘板(2)和通过渗铝一体成型形成在所述陶瓷绝缘板(2)的相对的两个表面上的第一铝层(3)和第二铝层(4)，且所述第一铝层(3)邻近所述铝硅碳散热本体(1)并与所述铝硅碳散热本体(1)结合，所述陶瓷绝缘板(2)将所述第二铝层(4)与所述第一铝层(3)隔离。
  5. 一种散热元件，所述散热元件包括导热体和散热本体，其特征在于，
    所述导热体为陶瓷覆铝导热体；
    所述散热本体为铝硅碳散热本体(1)，所述铝硅碳散热本体(1)包括碳化硅多孔骨架(10)和包覆在碳化硅多孔骨架(10)表面的铝层；
    所述陶瓷覆铝导热体包括陶瓷绝缘板(2)和设置在所述陶瓷绝缘板(2)的相对的两个表面上的第一铝层(3)和第二铝层(4)；
    所述第一铝层(3)与包覆在碳化硅多孔骨架(10)表面的铝层为一体结构，所述陶瓷绝缘板(2)将所述第二铝层(4)与所述第一铝层(3)隔离。
  6. 根据权利要求4或5所述的散热元件，其中，所述铝硅碳散热本体(1)的与所述 第一铝层(3)相连接的表面为平整表面。
  7. 根据权利要求4至6中任意一项所述的散热元件，其中，所述陶瓷绝缘板(2)为氧化铝陶瓷板、增韧氧化铝陶瓷板、氮化铝陶瓷板或氮化硅陶瓷板中的一种。
  8. 根据权利要求4-7任一项所述的散热元件，其中，所述第一铝层(3)和所述第二铝层(4)分别为纯铝层或铝合金层。
  9. 根据权利要求4-8任一项所述的散热元件，其中，所述第一铝层(3)的厚度为0.02～0.15mm，所述陶瓷绝缘板(2)的厚度为0.25～1mm，所述第二铝层(4)的厚度为0.2～1.0mm。
  10. 根据权利要求1-4和6-9中任一项所述的散热元件，其中，所述铝硅碳散热本体(1)上还设置有至少一个散热柱(5)；所述散热柱(5)的一端与铝硅碳散热本体(1)固定连接，散热柱(5)的另一端为自由端。
  11. 根据权利要求5所述的散热原件，其特征在于：
    铝硅碳散热本体(1)还包括至少一个散热柱(5)，所述散热柱(5)与第一铝层(3)以及包覆在碳化硅多孔骨架(10)表面的铝层为一体结构。
  12. 根据权利要求10或11所述的散热元件，其中，所述散热柱(5)与所述陶瓷覆铝导热体分别设置在所述铝硅碳散热本体(1)的相对的两个表面上。
  13. 根据权利要求10至12中任意一项所述的散热元件，其中，所述散热柱(5)为铝柱、铝合金柱和铝覆铜柱中的至少一种。
  14. 根据权利要求10-13任一项所述的散热元件，其中，所述散热柱(5)通过渗铝一体成型地连接在所述铝硅碳散热本体(1)上。
  15. 一种散热元件的制备方法，其特征在于，所述方法包括如下步骤：
    S1.将碳化硅多孔骨架(10)和陶瓷绝缘板(2)装入模具(9)，并使得所述碳化硅多孔骨架(10)的外表面与所述陶瓷绝缘板(2)和模具(9)的内壁之间具有第一空隙(6)，所述陶瓷绝缘板(2)与所述模具(9)的内壁之间具有第二空隙(7)；所述第一空隙(6)和第二空隙(7)相互连通；
    S2.在压力铸渗条件下，向被预热的所述模具(9)内注入熔融铝液以填充至所述第一空隙(6)和所述第二空隙(7)中并进行抽真空和加压，然后进行冷却脱模；
    S3.表面包覆有铝后的所述碳化硅多孔骨架(10)形成铝硅碳散热本体(1)，通过蚀刻去除所述第一空隙(6)和所述第二空隙(7)中的部分铝金属，以使得所述第一空隙(6)中形成第一铝层(3)，所述第二空隙(7)中形成第二铝层(4)，且所述陶瓷绝缘板(2)将所述第二铝层(4)与所述第一铝层(3)隔离。
  16. 根据权利要求15所述的方法，其中，所述压力铸渗条件包括：所述预热的温度为500-700℃，所述熔融铝液的温度为500-700℃，所述抽真空的压力为50-100Pa，所述加压的压力为4-10MPa，所述熔融铝液为纯铝或铝合金。
  17. 根据权利要求15或16所述的方法，其中，所述模具(9)的一个内表面上形成有至少一个向外突出的柱状凹陷(8)，所述柱状凹陷(8)适于形成与所述碳化硅多孔骨架(10)相连的至少一个散热柱(5)。
  18. 根据权利要求15-17任一项所述的方法，其中，所述陶瓷绝缘板(2)为氧化铝陶瓷板、增韧氧化铝陶瓷板、氮化铝陶瓷板或氮化硅陶瓷板中的一种。
  19. 根据权利要求15-18任一项所述的方法，其中，所述第一铝层(3)的厚度为0.02～0.15mm，所述陶瓷绝缘板(2)的厚度为0.25～1mm，所述第二铝层(4)的厚度为0.2～1mm。
  20. 根据权利要求15所述的方法，其中，所述蚀刻包括依次进行的贴膜、曝光、显影、腐蚀、去膜和水洗的步骤。
  21. 权利要求15-20中任意一项所述的方法制备得到的散热元件。
  22. 一种IGBT模组，其中，所述IGBT模组包括IGBT电路板和散热元件，所述散热元件为权利要求1-14和21中任意一项所述的散热元件。
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