WO2019019780A1 - 法拉第屏蔽件及反应腔室 - Google Patents

法拉第屏蔽件及反应腔室 Download PDF

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Publication number
WO2019019780A1
WO2019019780A1 PCT/CN2018/087510 CN2018087510W WO2019019780A1 WO 2019019780 A1 WO2019019780 A1 WO 2019019780A1 CN 2018087510 W CN2018087510 W CN 2018087510W WO 2019019780 A1 WO2019019780 A1 WO 2019019780A1
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WIPO (PCT)
Prior art keywords
slit
conductive ring
sub
ring body
faraday shield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/087510
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English (en)
French (fr)
Inventor
刘建生
陈鹏
王文章
常大磊
徐奎
丁培军
姜鑫先
张璐
苏振宁
宋巧丽
贾强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
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Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to SG11202000515TA priority Critical patent/SG11202000515TA/en
Publication of WO2019019780A1 publication Critical patent/WO2019019780A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus

Definitions

  • the present invention relates to the field of semiconductor manufacturing technology, and in particular to a Faraday shield and a reaction chamber.
  • the generated plasma contains a large amount of electrons, ions, excited atoms, molecules, and Active particles such as free radicals, which interact with the substrate to cause various physical and chemical reactions on the surface of the material, thereby changing the surface properties of the material.
  • ICP Inductive Coupled Plasma Emission Spectrometer
  • the ICP device includes a reaction chamber 1 on which a dielectric tube 3 is disposed.
  • a radio frequency coil 4 is disposed around the outer side of the dielectric tube 3, and is electrically connected to the upper radio frequency power source 6 through the upper matching unit 5, and the upper radio frequency power source 6 is used for loading radio frequency power to the radio frequency coil 4, and the electromagnetic field generated by the radio frequency coil 4 can pass.
  • the dielectric cylinder 3 is fed into the reaction chamber 1 to excite the process gas in the reaction chamber 1 to form a plasma.
  • a susceptor 9 is further disposed in the reaction chamber 1, which is electrically connected to the lower RF power source 8 through the lower matching device 7, and the lower RF power source 8 is used to load the RF negative bias to the susceptor 9 to attract the plasma. Etching the surface of the substrate.
  • a Faraday shield 10 is disposed around the inner side of the dielectric cylinder 3 for protecting the dielectric cylinder 3 from plasma etching while preventing residues deposited from the surface of the substrate from adhering to the inner wall of the dielectric cylinder 3, Thereby, the energy coupling efficiency of the dielectric cylinder 3 can be improved, and particle contamination in the reaction chamber 1 can be reduced.
  • the Faraday shield 10 is a ring body, and a slit 101 along the axial direction thereof is formed on the ring body, and the slit 101 extends from the upper end surface of the ring body to the lower end surface of the ring body and rings.
  • the body is completely broken, that is, the ring body is discontinuous in its circumferential direction, so that the Faraday shield 10 can be prevented from generating eddy current loss and heat generation.
  • the slit 101 is disposed along the axial direction of the ring body, as shown in Fig. 3, this enables only the magnetic field component A of the electromagnetic field generated by the radio frequency coil 4 in the axial direction of the ring body to The slit 101 is passed through, and the electric field component B of the electromagnetic field in the circumferential direction of the ring body is hard to pass through the slit 101 to be coupled to the reaction chamber, thereby causing low magnetic field coupling efficiency.
  • the lower magnetic field coupling efficiency often requires higher RF power to be applied to the RF coil 4 to achieve plasma ignition, maintain a certain processing rate, and use the upper electrode to individually illuminate to lower the substrate dielectric layer.
  • the present invention is directed to at least one of the technical problems existing in the prior art, and proposes a Faraday shield and a reaction chamber which can improve the total coupling efficiency of an electromagnetic field, thereby reducing the RF power that needs to be loaded to the RF coil.
  • a Faraday shield comprising a conductive ring body on which a slit is formed, and in a developed view of the conductive ring body, the slit is in the The length of the projection of the conductive ring in the axial direction is greater than zero, and the length of the projection of the slit in the circumferential direction of the conductive ring is greater than zero.
  • the slit includes a first sub-slot, and an angle between an axis of the conductive ring body in a developed view of the conductive ring body and an extending direction of the first sub-slot
  • the absolute value is greater than 0 degrees and less than 90 degrees.
  • an angle between an axis of the conductive ring body in a developed view of the conductive ring body and an extending direction of the first sub-slot is 45°.
  • the first sub-slot extends from the upper end surface of the conductive ring body to the lower end surface of the conductive ring body, so that the conductive ring body is completely disconnected in the circumferential direction thereof.
  • the slit further comprises a second sub-slit, in the unfolded view of the conductive ring body, a clip between the extending direction of the second sub-slot and the extending direction of the first sub-seam The angle is greater than 0 degrees.
  • the slit includes a first sub-slot and a second sub-slit, in a developed view of the conductive ring, a projection of an axis of the conductive ring and an extension direction of the first sub-slot
  • the angle between the two is equal to 90 degrees; the angle between the extending direction of the second sub-slot and the extending direction of the first sub-slot is greater than 0 degrees.
  • the second sub-slot extends from an upper end surface of the conductive ring body to a lower end surface of the conductive ring body such that the conductive ring body is completely disconnected in a circumferential direction thereof; or the second sub-opening The slit is between the upper end surface and the lower end surface of the conductive ring body without reaching the upper end surface and the lower end surface of the conductive ring body.
  • the second sub-slot is one or more, and in the case that the second sub-slot is plural, the plurality of second sub-slots extend along the direction of the first sub-slot Interval distribution.
  • first sub-slots are plural, and the plurality of first sub-slots are evenly distributed along a circumferential direction of the conductive ring body.
  • the conductive ring body is divided into N first regions and M second regions in a circumferential direction thereof, and the first region and the second region are interposed, wherein N and M are greater than or An integer equal to 1; at least two first sub-slots are disposed in each of the first regions, and the at least two first sub-slots are spaced apart along an axial interval of the conductive ring; At least two second sub-slots are disposed in the second region, and the at least two second sub-slits are spaced along the circumferential direction of the conductive ring.
  • the plurality of the first regions and the plurality of the second regions are evenly distributed along a circumference of the conductive ring body; for each of the first regions, the at least two first ones thereof The slits are evenly distributed; for each of the second regions, the at least two second sub-slits are evenly distributed.
  • the width of the first region in the circumferential direction of the conductive ring body is 50 to 200 mm.
  • the slit is formed as a meandering passage on a section obtained by cutting the slit in a plane perpendicular to the axis of the conductive ring.
  • each of L1, L2, L3, and L4 does not satisfy the condition that the straight line is at the upper left corner and the lower left of the slit
  • the positions other than the corner, the upper right corner, and the lower right corner are not tangent or intersect with S1 and S2, and are between S1 and S2;
  • S1 is a section line of the outer side of the slit
  • S2 is the slit a cut line of the inner side surface
  • L1 is a line connecting the upper right corner and the lower right corner of the slit
  • L2 is a line connecting the upper left corner and the lower right corner of the slit
  • L3 is the upper right corner connecting the slit
  • L4 is the straight line connecting the upper left corner and the lower left corner of the slit.
  • the meandering passage is formed by providing a blocking portion in the slit.
  • the barrier portions are two, respectively a first blocking portion and a second blocking portion, respectively disposed on the first end surface and the second end surface of the conductive ring body at the slit, wherein
  • the first blocking portion extends from the first end surface toward the second end surface and has a first gap from the second end surface; the second blocking portion faces the second end surface from the second end surface
  • the first end surface extends and has a second gap with the first end surface; the first barrier portion and the second blocking portion have a third gap in a radial direction of the conductive ring body;
  • the gap, the second gap, and the third gap constitute the meandering passage.
  • the slit is filled with a dielectric material.
  • the width of the slit is in the range of 2 to 10 mm.
  • the present invention also provides a reaction chamber including a dielectric cylinder, a Faraday shield and a radio frequency coil, the radio frequency coil being disposed around an outer side of the medium cylinder; the Faraday shield being disposed around the chamber
  • the inner side of the medium cylinder, and the Faraday shield is a Faraday shield according to any of the foregoing aspects.
  • the radio frequency coil adopts a cylindrical three-dimensional spiral coil whose winding wire is rectangular.
  • the axial spacing between any adjacent two winding wires of the cylindrical three-dimensional spiral coil is 6-10 mm.
  • reaction chamber is a pre-cleaning chamber.
  • the Faraday shield provided by the present invention comprises a conductive ring body, a slit is formed on the conductive ring body, and in the developed view of the conductive ring body, the slit is projected in the axial direction of the conductive ring body
  • the length is greater than zero, and the length of the projection of the slit in the circumferential direction of the conductive ring body is greater than zero for increasing the total coupling efficiency of the electromagnetic field by increasing the coupling efficiency of the electric field component in the circumferential direction of the conductive ring body.
  • the RF power that needs to be loaded to the RF coil can be reduced, that is, even if the lower RF power is loaded, the plasma ignition can be realized, a certain processing rate can be maintained, and the upper electrode can be separately illuminated to be used in the substrate dielectric layer. In the case of low-k materials, damage to the substrate dielectric layer is reduced. In addition, loading lower RF power can also avoid excessive temperature of the Faraday shield, thereby reducing the risk of particle contamination in the reaction chamber.
  • the invention provides a reaction chamber, which can reduce the RF power required to be loaded into the RF coil by using the above-mentioned Faraday shield provided by the present invention, thereby enabling plasma ignition to be maintained even if a lower RF power is loaded.
  • loading lower RF power can also avoid excessive temperature of the Faraday shield, thereby reducing the risk of particle contamination in the reaction chamber.
  • Figure 1 is a cross-sectional view of a conventional ICP device
  • FIG. 2 is a structural view of a conventional Faraday shield
  • Figure 3 is a partial structural view of a conventional Faraday shield
  • FIG. 4A is a structural view of a Faraday shield according to a first embodiment of the present invention.
  • FIG. 4B is a partial structural schematic view of a Faraday shield according to a first embodiment of the present invention.
  • FIG. 4C is a schematic partial structural view of another Faraday shield according to the first embodiment of the present invention.
  • 4D is a partial structural schematic view of another Faraday shield according to a first embodiment of the present invention.
  • 4E is a schematic partial structural view of the Faraday shield according to the first embodiment of the present invention.
  • Figure 5 is a partial structural view of a Faraday shield according to a second embodiment of the present invention.
  • Figure 6 is a side view of a Faraday shield according to a third embodiment of the present invention.
  • FIG. 7A is a radial cross-sectional view of a Faraday shield according to a fourth embodiment of the present invention.
  • Figure 7B is an enlarged view of the area I in Figure 7A;
  • Figure 8A is a partial enlarged view of a top view of a conductive ring body, showing L1 line and L2 line;
  • Figure 8B is a partial enlarged view of a top view of the conductive ring body shown in Figure 8A, showing the L3 line and the L4 line;
  • FIG. 8C is a partial enlarged view of a top view of the conductive ring body shown in FIG. 8A, showing a particle motion path;
  • Figure 8D is a partial enlarged view of a top view of a conductive ring body, showing the L1 line and the L2 line;
  • Figure 8E is a partial enlarged view of a top view of the conductive ring body shown in Figure 8D, showing the L3 line and the L4 line;
  • Figure 8F is a partial enlarged view of a top view of a conductive ring body, showing the L1 line and the L2 line;
  • Figure 8G is a partial enlarged view of a top view of the conductive ring body shown in Figure 8F, showing the L3 line and the L4 line;
  • Figure 9 is a cross-sectional view of a reaction chamber according to an embodiment of the present invention.
  • FIG. 10 is a structural diagram of a radio frequency coil used in an embodiment of the present invention.
  • FIG. 11 is a structural diagram of another radio frequency coil used in an embodiment of the present invention.
  • the width of the slit refers to the vertical between the two long sides of the slit. distance.
  • the width of the slit refers to the width of the first sub-slot; and when the slit includes the first sub-slot and the second sub-slit, the width of the slit.
  • the limitation is not only the limitation of the width of the first sub-slot, but also the width of the second sub-slot, that is, the width of each first sub-slit and the requirement of each second sub-slot
  • the widths each satisfy the numerical range of the width of the slit in each embodiment.
  • the present invention provides a Faraday shield comprising a conductive ring body, on which a slit is formed, in the developed view of the conductive ring body, a projection of the slit in the axial direction of the conductive ring body The length is greater than zero, and the length of the projection of the slit in the circumferential direction of the conductive ring body is greater than zero. In fact, this can also be understood as: in the developed view of the conductive ring body, the slit can be decomposed into a conductive ring. The component of the body axis and the component along the circumference of the conductive ring body.
  • the length of the projection due to the width of the slit in the length of the projection of the slit in the axial direction of the conductive ring is equal to zero
  • the length of the projection due to the width of the slit in the length of the projection of the slit in the circumferential direction of the conductive ring is equal to zero; in other words, the projection of the slit in the axial direction of the conductive ring is discussed and/or
  • the width of the slit should be regarded as zero, that is, the two long sides of the slit are considered to coincide.
  • the Faraday shield provided by the first embodiment of the present invention includes a conductive ring body 11 , and a slit is formed on the conductive ring body 11 , the slit includes a first sub-seam 111.
  • the first sub-slit 111 forms an angle a with the circumferential direction of the conductive ring body 11, and the axis of the first sub-slit 111 and the conductive ring body 11 is in the developed view.
  • An angle b is formed between the projection Z (the straight line Z in Fig.
  • the absolute value of b should be greater than 0 degrees and less than 90 degrees.
  • the projection length of the first sub-slit 111 in the axial direction of the conductive ring body 11 is La, and the first sub-slit 111 is in the circumferential direction of the conductive ring body 11.
  • the length of the projection is Lc, as can be clearly seen from Fig. 4B, both La and Lc are greater than zero.
  • the electromagnetic field generated by the radio frequency coil 13 surrounding the conductive ring body 11 can be divided into an axial magnetic field component A of the conductive ring body 11 and an electric field component B along the circumferential direction of the conductive ring body 11.
  • the sub-component of the magnetic field component A in the axial direction of the first sub-slit 111 along the axial direction of the conductive ring 11 can be fed into the reaction chamber through the first sub-slit 111
  • the sub-component of the electric field component B along the circumferential direction of the conductive ring body 11 in the oblique direction of the first sub-slit 111 can be fed into the reaction chamber through the first sub-slit 111.
  • Poynting vector refers to the energy flow density vector in an electromagnetic field, which represents the energy per unit time passing through a vertical unit area, in watts per meter.
  • E the electric field strength at a certain point in space
  • H the magnetic field strength
  • S the energy flow density of the electromagnetic field at that place
  • the layer is a low-k material, damage to the substrate dielectric layer is reduced.
  • loading lower RF power can also avoid excessive temperature of the Faraday shield, thereby reducing the risk of particle contamination in the reaction chamber.
  • an angle b formed between the first sub-slit 111 and the axis of the conductive ring 11 is 45°, which can maximize the length through the first sub-slit 111, thereby maximizing the flow density and thus maximizing The total coupling efficiency of the electromagnetic field is increased to a large extent.
  • the first sub-slit 111 is linear, but the present invention is not limited thereto.
  • the first sub-slot 111 may also be in the shape of a line or an arc. And so on, as long as the coupling efficiency of the electromagnetic field component in the circumferential direction of the conductive ring body 11 can be increased to achieve the purpose of increasing the total coupling efficiency of the electromagnetic field, for example, the axis of the conductive ring body 11 is in the conductive ring body.
  • the absolute value of the angle between the projection in the expanded view of 11 and the direction in which the first sub-slit 111 extends is greater than 0 degrees and less than 90 degrees.
  • the extending direction of the first sub-slit 111 refers to the direction of the line connecting the lower end of the first sub-slit 111 and the upper end thereof in the developed view of the conductive ring body 11.
  • the slit may further include a second sub-slot, and in the developed view of the conductive ring body 11, the extending direction of the second sub-slit and the extension of the first sub-slit 111
  • the angle between the directions is greater than 0 degrees. That is, as long as the slits having the extending direction different from the extending direction of the first sub-slit 111 are collectively referred to as the second sub-slit.
  • the number of the second sub-slits may be one or more, and the extending directions of the plurality of second sub-slits may be the same or different from each other.
  • the slit is further provided with a second sub-slot 112 on the basis of the first sub-slot 111, and the second sub-slot 112 is disposed along the axial direction of the conductive ring body 11. And intersecting with the first sub-slit 111 to form an angle c.
  • the length of the projection of the slit in the axial direction of the conductive ring body 11 is La
  • the length of the projection of the slit in the circumferential direction of the conductive ring body 11 is Lc.
  • both La and Lc are greater than zero.
  • the slit includes a first sub-slit 111 and a second sub-slot 112, and the coupling efficiency of the magnetic field component A can be further increased by the second sub-slot 112.
  • the first sub-slit 111 extends from the upper end surface of the conductive ring body 11 to the upper end surface of the conductive ring body 11 to completely disconnect the conductive ring body 11 to avoid eddy current loss in the conductive ring body 11. And fever.
  • the second sub-slot 112 does not extend to the upper end surface and the lower end surface of the conductive ring body 11 but between the two end faces, that is, the second sub-slit 112 does not completely disconnect the conductive ring body 11 to maintain The monolithic structure of the conductive ring body 11.
  • the width hw of the slit is in the range of 2 to 10 mm, preferably At 5-8mm.
  • the width hw of the slit refers to the width of the first sub-slit 111 and the second sub-slot 112, and the first sub-slit 111 and the The width of the two sub-slots 112 may be the same or different.
  • the dielectric material 12 may also be filled in the slit, such as ceramic. An electromagnetic field can be fed into the reaction chamber through the dielectric material 12.
  • the second sub-slot 112 is one, but the present invention is not limited thereto. In practical applications, as shown in FIG. 4E, the second sub-slot 112 may also be A plurality of the plurality of second sub-slots 112 are spaced apart along the extending direction (inclination direction) of the first sub-slit 111. Further, in the developed view of the conductive ring body shown in FIG. 4E, the length of projection of the slit in the axial direction of the conductive ring body 11 is La, and the length of projection of the slit in the circumferential direction of the conductive ring body 11 As Lc, it can be clearly seen from Fig. 4E that both La and Lc are greater than zero.
  • the second sub-slot 112 and the first sub-slot 111 cross each other, but the present invention is not limited thereto. In practical applications, the second sub-slot 112 and The first sub-slits 111 can also be separated from each other.
  • the first sub-slot may be one or more, and the plurality of first sub-slots are spaced and evenly distributed along the circumferential direction of the conductive ring 11 to ensure process uniformity. . It will be readily appreciated that the greater the number of first sub-slits and/or second sub-slits, the greater the overall coupling efficiency of the electromagnetic field.
  • a Faraday shield according to a second embodiment of the present invention includes a conductive ring body 21, and a slit is formed on the conductive ring body 21, the slit including two circumferential directions along the conductive ring body 21.
  • the first sub-slit 212 is extended, and the two first sub-slots 212 are spaced apart along the axial direction of the conductive ring 21.
  • the angle between the projection of the conductive ring body 21 in the developed view of the conductive ring body 21 and the extending direction of the first sub-slit 212 is 90°, so that the electric field in the circumferential direction of the conductive ring body 21 Component B can be fed into the reaction chamber through the first sub-slot 212.
  • the slit includes a second sub-slit 211 extending in the axial direction of the conductive ring body 21, and the second sub-slit 211 and the first sub-slot 212 cross each other. Since the second sub-slot 211 extends in the axial direction of the electroconductive ring body 21, it can feed the magnetic field component A in the axial direction of the electroconductive ring body 11 into the reaction chamber.
  • the length of the projection of the slit in the axial direction of the conductive ring body 21 is La, and the slit is in the circumferential direction of the conductive ring body 21.
  • the length of the projection is Lc, and both La and Lc are greater than zero.
  • the total coupling efficiency of the electromagnetic field can reduce the RF power that needs to be loaded to the RF coil, that is, even if the lower RF power is loaded, the plasma ignition can be realized, a certain processing rate can be maintained, and the upper electrode can be used separately.
  • loading lower RF power can also avoid excessive temperature of the Faraday shield, thereby reducing the risk of particle contamination in the reaction chamber.
  • the second sub-slit 211 extends from the upper end surface of the conductive ring body 11 to the upper end surface of the conductive ring body 11 and the conductive ring body 11 is completely broken to avoid eddy current loss in the conductive ring body 11 and heat.
  • each of the first sub-slots 212 does not extend to the upper end surface and the lower end surface of the conductive ring body 11 but between the two end faces, that is, the first sub-slit 212 is at both end faces of the conductive ring body 21.
  • the conductive ring body 21 is not completely broken, thereby maintaining the integral structure of the conductive ring body 11.
  • the first sub-slots 212 are two. However, the present invention is not limited thereto. In practical applications, the first sub-slots 212 may be one, or three or more, and multiple. The angle formed between the first sub-slit 212 and the axis of the conductive ring 21 may be the same or may be different.
  • a Faraday shield provided by a third embodiment of the present invention includes a conductive ring body 41 , and a plurality of first regions 411 and a plurality of second regions 412 are divided in a circumferential direction of the conductive ring body 41 . And the plurality of first regions 411 and the plurality of second regions 412 are disposed in phase, that is, the left and right sides of the first region 411 are the second region 412, and the left and right sides of the second region 412 are first. Area 411.
  • a first sub-slot 42 extending in the circumferential direction of the conductive ring body 41 is disposed in each of the first regions 411, and the first sub-slit 42 is at least two and along the axial direction of the conductive ring body 41 ( That is, the Y direction) shown in FIG. 6 is spaced apart;
  • a second sub-slit 43 extending in the axial direction of the conductive ring 41 is disposed in each of the second regions 412, and the second sub-slit 43 is at least Two, and are spaced apart along the circumferential direction of the conductive ring body 41 (i.e., the X direction shown in Fig. 6).
  • the length of projection of the slit in the axial direction of the conductive ring 41 is La
  • the length of projection of the slit in the circumferential direction of the conductive ring 41 is As Lc
  • both La and Lc are greater than zero.
  • the plurality of first regions 411 and the plurality of second regions 412 are evenly distributed along the circumferential direction of the conductive ring body 41. Moreover, for each of the first regions 411, the first sub-slits 42 are evenly distributed; for each of the second regions 412, the second sub-slits 43 are evenly distributed.
  • the width of the first region 411 in the circumferential direction of the conductive ring 41 is 50 to 200 mm to minimize eddy current.
  • the width of the first region 411 in the circumferential direction of the conductive ring 41 refers to the width of the first region 411 in the circumferential direction of the conductive ring 41 in the developed view of the conductive ring 41.
  • the Faraday shield provided by the fourth embodiment of the present invention is improved on the basis of the above first to third embodiments.
  • the projection of the slit on the inner ring wall of the conductive ring body on the outer ring wall of the conductive ring body and the opening The openings sewn on the outer ring wall of the conductive ring body completely coincide or partially overlap, in other words, in the top view of the conductive ring body, the slit extends in the thickness direction of the conductive ring body; in the fourth embodiment, the conductive ring body In the top view, the slit is configured in the form of a meandering channel.
  • the so-called meandering passage means that in the plan view of the conductive ring body, the slit extends in a direction not conforming to the thickness direction of the conductive ring body, but at a certain angle t to the thickness direction of the conductive ring body.
  • the blocking portion forms a meandering passage 34 between the outer ring wall of the conductive ring body 31 and the inner ring wall.
  • the extending direction of the meandering passage 34 is the extending direction of the slit, that is, the extending direction of the straight line l1, and the thickness direction of the conductive ring body 31 is the extending direction of the straight line l2, and the angle between the two is t.
  • Forming the tortuous path 34 can further prevent parts (such as the dielectric tube) located inside the Faraday shield from being corroded at the slit without affecting the coupling efficiency of the magnetic field.
  • the two blocking portions are respectively a first blocking portion 32 and a second blocking portion 33, which are respectively disposed at the first end surface 311 and the second end surface of the conductive ring body 31 at the slit.
  • the first end surface 311 and the second end surface 312 are two sections in which the conductive ring body 31 is broken by slits and opposed to each other.
  • the first blocking portion 32 extends from the first end surface 311 toward the second end surface 312 and has a first gap 321 between the second end surface 312 and the second end surface 312 .
  • the extending direction of the first blocking portion 32 is preferably the circumferential direction of the conductive ring body 31.
  • the second blocking portion 33 extends from the second end surface 312 toward the first end surface 311 and has a second gap 331 between the first end surface 311 and the first end surface 311 .
  • the third gap 341 is provided between the first blocking portion 32 and the second blocking portion 33 in the radial direction of the conductive ring body 31.
  • the first gap 321, the second gap 331, and the third gap 341 constitute the above-described meandering passage 34.
  • the above-mentioned blocking portion may adopt any other structure as long as the following design requirements can be met: that is, a labyrinth-shaped meandering channel can be formed in the radial direction of the conductive ring body 31 to avoid being located inside the Faraday shield member. The part is corroded by the presence of the slit.
  • the first sub-slot 111 has an arc shape, wherein S1 is a cutting line of the outer side surface of the first sub-slit 111, S2 is a cutting line of the inner side surface of the first sub-slit 111, and L1 is the first sub-opening of the connection.
  • a straight line of the upper right corner and the lower right corner of the slit 111 is a straight line connecting the upper left corner and the lower right corner of the first sub-slit 111, and L3 is a straight line connecting the upper right corner and the lower left corner of the first sub-slit 111, and L4 is a connection.
  • L1 only intersects the upper and lower ends of S2 (ie, the upper right corner and the lower right corner of the first sub-slit 111), and L1 is on the right side of S2 and not between S1 and S2;
  • the upper end point of S1 and the lower end point of S2 ie, the upper left corner and the lower right corner of the first sub-slit 111) intersect with point B in S2;
  • L3 is divided by the lower end point of S1 and the upper end point of S2 ( That is, the upper right corner and the lower left corner of the first sub-slit 111 intersect, and also intersect the point C in S2; the upper and lower ends of L4 and S1 (ie, the upper left corner of the first sub-slit 111) The lower left corner intersects.
  • L4 is no longer tangent to or intersects with S1 and S2 except for the upper and lower ends of S1 and is between S1 and S2, that is, in the upper left corner, the lower left corner, and the upper right except the first sub-slit 111 Outside the corner and the lower right corner, L4 does not have any intersection with the conductive ring body 31, so that the area between L4 and S2 in the first sub-slit 111 becomes the inner side and the outer side of the conductive ring body 31 in a straight line direction.
  • the through passages allow the particles inside the conductive ring body 31 to directly reach the outside of the conductive ring body 31 via the passage, and the dotted line arrow in FIG.
  • 8C shows that the particles inside the conductive ring body 31 are directly directly through the first sub-slit 111 A path to the outside of the conductive ring body 31 is reached. It can be seen that, in the first sub-slit 111 shown in FIG. 8A to FIG. 8C, the plasma inside the conductive ring body 11 can directly pass through the first sub-slit 111, that is, when the first sub-slot is used. 8A to 8C, it cannot block the plasma from passing through the first sub-slit 111 to the outside of the conductive ring 11 from the inner side of the conductive ring body 11, thereby causing the part located inside the Faraday shield ( For example, the dielectric cylinder is etched at the position of the first sub-slit 11 .
  • FIG. 8D and FIG. 8E in a partially enlarged view of the top view of the conductive ring body 11, that is, in a view in which the region of the first sub-slit 111 is cut by a plane perpendicular to the axis of the conductive ring body 11
  • the first sub-slit 111 is curved.
  • the meanings of S1, S2, L1, L2, L3, and L4 are the same as those of the corresponding symbols in the foregoing embodiment shown in Figs. 8A to 8C, and are not described herein again.
  • L1 and S2 intersect (ie, the upper right corner and the lower right corner of the first sub-slot 111), and L1 is on the right side of S2 and not between S1 and S2; L2 is divided by S1
  • the upper end point intersects with the lower end point of S2 (ie, the upper left corner and the lower right corner of the first sub-slit 111) and also intersects point B in S2;
  • L3 is divided by the lower end point of S1 and the upper end point of S2 (ie The intersection of the upper right corner and the lower left corner of the first sub-slit 111 intersects with the point C in S2;
  • L4 is divided by the upper and lower ends of S1 (ie, the upper left corner of the first sub-slit 111 and In the lower left corner, the intersection also intersects the points D1 and D2 in S2.
  • FIG. 8F and FIG. 8G in a partially enlarged view of a top view of the conductive ring body 11, that is, in a view obtained by cutting a region of the first sub-slit 111 with a plane perpendicular to the axis of the conductive ring body 11
  • the first sub-slit 111 is in the shape of a fold line.
  • the meanings of S1, S2, L1, L2, L3, and L4 are the same as those of the corresponding symbols in the foregoing embodiment shown in Figs. 8A to 8C, and are not described herein again.
  • L1 intersects with the upper and lower end points of S1 (ie, the upper right corner and the lower right corner of the first sub-slit 111), and also intersects with the A1 point in S1 and the A2 and A3 points in S2;
  • L2 In addition to intersecting the lower end point of S1 and the upper end point of S2 (ie, the upper left and lower right corners of the first sub-slit 111), it also intersects points B1 and B2 in S1 and points B3 and B4 in S2;
  • L3 In addition to intersecting the upper end point of S1 and the lower end point of S2 (ie, the upper right corner and the lower left corner of the first sub-slit 111), it also intersects C1 in S1 and C2 in S2;
  • L4 is divided by S2
  • the lower two endpoints ie, the upper left corner and the lower left corner of the first sub-slit 111) intersect with the D1 and D2 points in S1 and the D3 point in S2.
  • the slit is configured as a meandering passage in a form in which, in a plan view of the conductive ring body, each of L1, L2, L3, and L4 does not satisfy the condition that the straight line is apart from the slit
  • the positions other than the upper left corner, the lower left corner, the upper right corner, and the lower right corner are not tangent or intersect with S1 and S2, and are between S1 and S2.
  • the Faraday shield provided by the above various embodiments of the present invention includes a conductive ring body, and a slit is formed on the conductive ring body.
  • the slit is electrically conductive.
  • the length of the projection in the axial direction of the ring body is greater than zero, and the length of the projection of the slit in the circumferential direction of the conductive ring body is greater than zero for increasing the coupling efficiency of the magnetic field component in the circumferential direction of the conductive ring body by increasing the electromagnetic field
  • the RF power that needs to be loaded into the RF coil that is, enabling plasma ignition, maintaining a certain processing rate, and using the upper electrode even when loading lower RF power.
  • loading lower RF power can also avoid excessive temperature of the Faraday shield, thereby reducing the risk of particle contamination in the reaction chamber.
  • an embodiment of the present invention further provides a reaction chamber 201 in which a medium cylinder 203 is disposed in a sidewall 202 of the reaction chamber 201.
  • a radio frequency coil 204 is disposed around the outer side of the dielectric tube 203, and is electrically connected to the upper radio frequency power source 206 through the upper matching unit 207.
  • the upper radio frequency power source 206 is used to load the radio frequency power to the radio frequency coil 204, and the electromagnetic field generated by the radio frequency coil 204 can pass.
  • the dielectric cylinder 203 is fed into the reaction chamber 201 to excite the process gas in the reaction chamber 201 to form a plasma.
  • a susceptor 9 is further disposed in the reaction chamber 201, which is electrically connected to the lower RF power source 208 through the lower matching unit 209, and the lower RF power source 208 is used to load the RF negative bias to the susceptor 9 to attract the plasma. Etching the surface of the substrate.
  • a Faraday shield 210 is disposed around the inner side of the dielectric cylinder 203 for protecting the dielectric cylinder 203 from plasma etching, while preventing residues deposited from the surface of the substrate from adhering to the inner wall of the dielectric cylinder 203. Thereby, the energy coupling efficiency of the dielectric cylinder 203 can be improved, and particle contamination in the reaction chamber 201 can be reduced.
  • the Faraday shield 210 can be grounded or can be electrically suspended.
  • the above Faraday shield 201 employs the Faraday shield provided by the above various embodiments of the present invention.
  • the RF coil 204 is a cylindrical three-dimensional spiral coil, and forms a cross section of a winding wire of a cylindrical three-dimensional spiral coil.
  • the cross section is perpendicular to the winding wire.
  • the cross section of the axis) is circular.
  • the present invention is not limited thereto, and the winding wire may have other cross-sectional shapes.
  • the cross-sectional shape of the winding wire of the radio frequency coil 204' is rectangular, and the winding wire is wound.
  • the RF coil 204' extends up and down as shown in the figure to form a cylindrical three-dimensional spiral coil.
  • the width W of the winding wire (that is, the height of the single-twist winding wire in the vertical direction) is larger than the diameter of the winding wire having a cross-section of a circular cross section as shown in FIG. 9, so that the cross-sectional shape can be a rectangular winding.
  • the cross-sectional area of the wire is larger than the cross-sectional area of the wound wire having a circular cross-sectional shape.
  • the size of the parasitic capacitance between the cylindrical three-dimensional spiral coil and the Faraday shield is proportional to the cross-sectional area of the cylindrical three-dimensional spiral coil. Moreover, the smaller the parasitic capacitance, the weaker the capacitive coupling, and the weaker the electric field strength fed into the reaction chamber; conversely, the larger the parasitic capacitance, the stronger the capacitive coupling and thus the fed-in response The stronger the electric field strength in the chamber, the more the electric field strength is sufficient to achieve the plasma electric field priming.
  • the above-mentioned RF coil 204' can be increased.
  • Parasitic capacitance which enhances capacitive coupling, which in turn enhances the electric field strength fed into the reaction chamber.
  • the axial spacing d between any adjacent two winding winding lines of the cylindrical three-dimensional spiral coil formed by the rectangular winding wire is 6-10 mm, which can prevent the adjacent two winding winding lines. There is a sparking phenomenon due to the potential difference.
  • a cylindrical three-dimensional spiral coil composed of a winding wire having a rectangular cross-sectional shape has a thickness of 2-4 mm in the radial direction thereof.
  • the height hc of the cylindrical three-dimensional helical coil formed by the winding wire having a rectangular cross-sectional shape cannot exceed the height of the dielectric cylinder 203, that is, the upper end of the cylindrical three-dimensional spiral coil formed by the winding wire having a rectangular cross-sectional shape is lower than the medium.
  • the upper end of the barrel 203 has a lower end that is higher than the lower end of the medium barrel 203.
  • the above reaction chamber 201 may be a pre-cleaning chamber.
  • the frequency of the radio frequency power loaded to the above-described radio frequency coil 204 may be 2 MHz, 13.56 MHz or 60 MHz or the like.
  • the RF power formed by the pulse can also be loaded.
  • the frequency of the radio frequency power loaded to the above susceptor 9 may be 400 kHz, 2 MHz, 13.56 MHz, or 60 MHz, or the like.
  • the RF power formed by the pulse can also be loaded.
  • the RF power loaded to the susceptor 9 may not be applied.
  • the reaction chamber provided by the embodiment of the invention can reduce the RF power required to be loaded into the RF coil by using the above-mentioned Faraday shield provided by the above various embodiments of the present invention, thereby enabling plasma to be realized even if a lower RF power is loaded.
  • the body illuminates, maintains a certain processing rate, and uses the upper electrode to individually illuminate to reduce damage to the substrate dielectric layer when the substrate dielectric layer is a low-k material.
  • loading lower RF power can also avoid excessive temperature of the Faraday shield, thereby reducing the risk of particle contamination in the reaction chamber.

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Abstract

本发明提供一种法拉第屏蔽件及反应腔室，其包括导电环体，在所述导电环体上形成有开缝，在该导电环体的展开图中，该开缝在导电环体的轴向上的投影的长度大于零，以及该开缝在导电环体的周向上的投影的长度大于零，用以通过增加电磁场在导电环体的圆周方向上的电场分量的耦合效率，来增加该电磁场的总耦合效率。本发明提供的法拉第屏蔽件及反应腔室，其可以提高磁场耦合效率，从而可以降低需要向射频线圈加载的射频功率。

Description

法拉第屏蔽件及反应腔室 技术领域
本发明涉及半导体制造技术领域，具体地，涉及一种法拉第屏蔽件及反应腔室。
背景技术
在使用电感耦合等离子体(Inductive Coupled Plasma Emission Spectrometer，以下简称ICP)装置进行集成电路和MEMS器件的制造工艺的过程中，产生的等离子体中含有大量的电子、离子、激发态的原子、分子和自由基等活性粒子，这些活性粒子和衬底相互作用使材料表面发生各种物理和化学反应，从而使材料表面性能获得变化。
图1为现有的ICP装置的剖视图。请参阅图1，ICP装置包括反应腔室1，在该反应腔室1的侧壁2上设置有介质筒3。在介质筒3的外侧环绕设置有射频线圈4，其通过上匹配器5与上射频电源6电连接，上射频电源6用于向射频线圈4加载射频功率，由射频线圈4产生的电磁场能够通过介质筒3馈入至反应腔室1中，以激发反应腔室1中的工艺气体形成等离子体。并且，在反应腔室1中还设置有基座9，其通过下匹配器7和下射频电源8电连接，下射频电源8用于向基座9加载射频负偏压，以吸引等离子体刻蚀衬底表面。此外，在介质筒3的内侧环绕设置有法拉第屏蔽件10，用于保护介质筒3不被等离子体刻蚀，同时避免自衬底表面溅射出来的残留物附着在介质筒3的内壁上，从而可以提高介质筒3的能量耦合效率，减少反应腔室1内的颗粒污染。
图2为现有的法拉第屏蔽件的结构图。请参阅图2，法拉第屏蔽件10为环体，且在该环体上形成有沿其轴向的开缝101，该开缝101自环体的的上端面延伸至环体的下端面而环体完全断开，即，环体在其周向上是非连续 的，从而可以避免法拉第屏蔽件10产生涡流损耗和发热。
在上述法拉第屏蔽件10的结构中，由于开缝101沿环体的轴向设置，如图3所示，这使得只有由射频线圈4产生的电磁场在环体的轴向上的磁场分量A能够穿过开缝101，而该电磁场在环体的圆周方向上的电场分量B很难穿过开缝101而耦合至反应腔室，从而造成磁场耦合效率较低。而较低的磁场耦合效率往往需要向射频线圈4加载更高的射频功率，才能实现等离子体启辉，维持一定的处理速率，以及使用上电极单独启辉，以在基片介质层为low-k材料时，减少对该基片介质层的损伤。但是，向射频线圈4加载较高的射频功率会使法拉第屏蔽件10因涡流损耗的增加和离子轰击的增强而造成温度过高，从而增大了反应腔室1颗粒污染的风险。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种法拉第屏蔽件及反应腔室，其可以提高电磁场的总耦合效率，从而可以降低需要向射频线圈加载的射频功率。
为实现本发明的目的而提供一种法拉第屏蔽件，其包括导电环体，在所述导电环体上形成有开缝，并且在所述导电环体的展开图中，所述开缝在所述导电环体的轴向上的投影的长度大于零，以及所述开缝在所述导电环体的周向上的投影的长度大于零。
其中，所述开缝包括第一子开缝，且所述导电环体的轴线在所述导电环体的展开图中的投影与所述第一子开缝的延伸方向之间的夹角的绝对值大于0度且小于90度。
其中，所述导电环体的轴线在所述导电环体的展开图中的投影与所述第一子开缝的延伸方向之间的夹角为45°。
其中，所述第一子开缝自所述导电环体的上端面延伸至所述导电环体的下端面，使得所述导电环体在其周向上完全断开。
其中，所述开缝还包括第二子开缝，在所述导电环体的展开图中，所述第二子开缝的延伸方向与所述第一子开缝的延伸方向之间的夹角大于0度。
其中，所述开缝包括第一子开缝和第二子开缝，在所述导电环体的展开图中，所述导电环体的轴线的投影与所述第一子开缝的延伸方向之间的夹角等于90度；所述第二子开缝的延伸方向与所述第一子开缝的延伸方向之间的夹角大于0度。
其中，所述第二子开缝自所述导电环体的上端面延伸至所述导电环体的下端面，使得所述导电环体在其周向上完全断开；或者所述第二子开缝处于所述导电环体的上端面和下端面之间而未到达所述导电环体的上端面和下端面。
其中，所述第二子开缝与所述第一子开缝相互交叉。
其中，所述第二子开缝为一个或多个，在所述第二子开缝为多个的情况下，所述多个第二子开缝沿所述第一子开缝的延伸方向间隔分布。
其中，所述第一子开缝为多个，所述多个第一子开缝沿所述导电环体的周向均匀分布。
其中，所述导电环体在其周向上被划分为N个第一区域和M个第二区域，且所述第一区域和所述第二区域相间设置，其中，N和M均为大于或等于1的整数；在每个所述第一区域内设置有至少两个第一子开缝，且所述至少两个第一子开缝沿所述导电环体的轴向间隔分布；在每个所述第二区域内设置有至少两个第二子开缝，且所述至少两个第二子开缝沿所述导电环体的周向间隔分布。
其中，多个所述第一区域和多个所述第二区域沿所述导电环体的周向均匀分布；对于每一个所述第一区域而言，其中的所述至少两个第一子开缝均匀分布；对于每一个所述第二区域而言，其中的所述至少两个第二子开缝均匀分布。
其中，所述第一区域在所述导电环体的周向上的宽度为50～200mm。
其中，在以垂直于所述导电环体的轴线的平面对所述开缝进行剖切所得到的剖切面上，所述开缝被呈现为曲折通道。
其中，所述开缝呈现为这种形式的曲折通道，即，L1、L2、L3和L4中的每一条直线均不满足如下条件：即，该直线在除所述开缝的左上角、左下角、右上角和右下角之外的位置不与S1和S2相切或者相交，且处于S1和S2之间；其中，S1为所述开缝的外侧面的剖切线，S2为所述开缝的内侧面的剖切线，L1为连接所述开缝的右上角和右下角的直线，L2为连接所述开缝的左上角和右下角的直线，L3为连接所述开缝的右上角和左下角的直线，L4为连接所述开缝的左上角和左下角的直线。
其中，所述曲折通道通过在所述开缝中设置阻挡部而形成。
其中，所述阻挡部为两个，分别为第一阻挡部和第二阻挡部，二者分别设置在所述导电环体的在所述开缝处的第一端面和第二端面上，其中，所述第一阻挡部自所述第一端面朝向所述第二端面延伸，且与所述第二端面之间具有第一间隙；所述第二阻挡部自所述第二端面朝向所述第一端面延伸，且与所述第一端面之间具有第二间隙；所述第一阻挡部和第二阻挡部之间在所述导电环体的径向上具有第三间隙；所述第一间隙、第二间隙和第三间隙构成所述曲折通道。
其中，在所述开缝中填充有介质材料。
其中，所述开缝的宽度的取值范围在2～10mm。
作为另一个方面，本发明还提供一种反应腔室，其包括介质筒、法拉第屏蔽件和射频线圈，所述射频线圈环绕设置在所述介质筒的外侧；所述法拉第屏蔽件环绕设置在所述介质筒的内侧，并且，所述法拉第屏蔽件采用前述任一方案所述的法拉第屏蔽件。
其中，所述射频线圈采用缠绕线为矩形的圆柱立体式螺旋线圈。
其中，所述圆柱立体式螺旋线圈的任意相邻的两匝缠绕线之间的轴向间距为6-10mm。
其中，所述反应腔室为预清洗腔室。
本发明具有以下有益效果：
本发明提供的法拉第屏蔽件，其包括导电环体，在该导电环体上形成有开缝，并且在该导电环体的展开图中，该开缝在导电环体的轴向上的投影的长度大于零，以及该开缝在导电环体的周向上的投影的长度大于零，用以通过增加电磁场在导电环体的周向上的电场分量的耦合效率，来增加该电磁场的总耦合效率，从而可以降低需要向射频线圈加载的射频功率，即，即使加载较低的射频功率，也能够实现等离子体启辉，维持一定的处理速率，以及使用上电极单独启辉，以在基片介质层为low-k材料时，减少对该基片介质层的损伤。另外，加载较低的射频功率还可以避免法拉第屏蔽件的温度过高，从而减小了反应腔室颗粒污染的风险。
本发明提供的反应腔室，其通过采用本发明提供的上述法拉第屏蔽件，可以降低需要向射频线圈加载的射频功率，从而即使加载较低的射频功率，也能够实现等离子体启辉，维持一定的处理速率，以及使用上电极单独启辉，以在基片介质层为low-k材料时，减少对该基片介质层的损伤。另外，加载较低的射频功率还可以避免法拉第屏蔽件的温度过高，从而减小了反应腔室颗粒污染的风险。
附图说明
图1为现有的ICP装置的剖视图；
图2为现有的法拉第屏蔽件的结构图；
图3为现有的法拉第屏蔽件的局部结构图；
图4A为本发明第一实施例提供的法拉第屏蔽件的结构图；
图4B为本发明第一实施例提供的一种法拉第屏蔽件的展开图中的局部结构示意图；
图4C为本发明第一实施例提供的另一种法拉第屏蔽件的展开图中的局 部结构示意图；
图4D为本发明第一实施例提供的又一种法拉第屏蔽件的展开图中的局部结构示意图；
图4E为本发明第一实施例提供的法拉第屏蔽件的展开图中的再一种局部结构示意图；
图5为本发明第二实施例提供的法拉第屏蔽件的局部结构图；
图6为本发明第三实施例提供的法拉第屏蔽件的侧视图；
图7A为本发明第四实施例提供的法拉第屏蔽件的径向截面图；
图7B为图7A中I区域的放大图；
图8A为一种导电环体的俯视图的局部放大图，其中示出L1线和L2线；
图8B为图8A所示导电环体的俯视图的局部放大图，其中示出L3线和L4线；
图8C为图8A所示导电环体的俯视图的局部放大图，其中示出粒子运动路径；
图8D为一种导电环体的俯视图的局部放大图，其中示出L1线和L2线；
图8E为图8D所示导电环体的俯视图的局部放大图，其中示出L3线和L4线；
图8F为一种导电环体的俯视图的局部放大图，其中示出L1线和L2线；
图8G为图8F所示导电环体的俯视图的局部放大图，其中示出L3线和L4线；
图9为本发明实施例提供的反应腔室的剖视图；
图10为本发明实施例采用的一种射频线圈的结构图；
图11为本发明实施例采用的另一种射频线圈的结构图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来 对本发明提供的法拉第屏蔽件及反应腔室进行详细描述。
在对本发明提供的法拉第屏蔽件及反应腔室进行详细描述之前，首先对开缝的宽度进行如下定义：本申请中，开缝的宽度指的是该开缝的两个长边之间的垂直距离。当开缝仅包含第一子开缝时，开缝的宽度指的是第一子开缝的宽度；并且当开缝包含第一子开缝和第二子开缝时，开缝的宽度值的限制，既是对第一子开缝的宽度的限制，也是对第二子开缝的宽度的限制，也就是说，要求每一个第一子开缝的宽度和每一个第二子开缝的宽度各自均要满足各实施例中开缝的宽度的数值范围。
接下来对本发明提供的技术方案进行详细描述。本发明提供一种法拉第屏蔽件，包括导电环体，在所述导电环体上形成有开缝，在该导电环体的展开图中，该开缝在导电环体的轴向上的投影的长度大于零，并且该开缝在导电环体的周向上的投影的长度大于零，事实上这也可以理解为：在该导电环体的展开图中，该开缝能够被分解为沿导电环体轴向的分量以及沿导电环体周向的分量。需要说明的是，本申请中，无论开缝的宽度为多少，在该开缝在导电环体的轴向上的投影的长度中因该开缝的宽度所带来的投影的长度等于零，以及在该开缝在导电环体的周向上的投影的长度中因该开缝的宽度所带来的投影的长度等于零；换言之，在讨论开缝在导电环体的轴向上的投影和/或开缝在导电环体的周向上的投影时，该开缝的宽度应当视为零，即，该开缝的两个长边视为重合。
请一并参阅图4A和图4B，本发明第一实施例提供的法拉第屏蔽件，其包括导电环体11，在该导电环体11上形成有开缝，该开缝包括第一子开缝111。在图4B所示的导电环体的展开图中，第一子开缝111与导电环体11的周向之间形成夹角a，第一子开缝111与导电环体11的轴线在该展开图中的投影Z(图4B中的直线Z)之间形成夹角b，其中，b＝90-a，︱b︱＝︱90-a︱，b的绝对值应大于0度且小于90度。在图4B所示的导电环体的展开图中，第一子开缝111在导电环体11的轴向上的投影的长度为La，第 一子开缝111在导电环体11的周向上的投影的长度为Lc，从图4B中可以清晰地看出，La和Lc均大于零。由环绕在该导电环体11周围的射频线圈13产生的电磁场可以划分为导电环体11的轴向的磁场分量A和沿导电环体11的周向的电场分量B。通过采用上述第一子开缝111，沿导电环体11的轴向的磁场分量A在该第一子开缝111的倾斜方向上的子分量能够通过第一子开缝111馈入反应腔室内，同时沿导电环体11的周向的电场分量B在该第一子开缝111的倾斜方向上的子分量能够通过第一子开缝111馈入反应腔室内。
坡印廷矢量(Poynting vector)是指电磁场中的能流密度矢量，表示单位时间内通过垂直单位面积的能量，单位为瓦/(米)。假设空间中某一处的电场强度为E，磁场强度为H，则该处电磁场的能流密度为S＝E×H，方向由E和H按右手螺旋定则确定。该处电磁场的能流密度的大小为|S|＝|E||H|sinθ，其中，θ为E和H的夹角。
基于上述原理，若如现有技术中将开缝沿导电环体11的轴向设置，则E≈0，所以S≈0。假设上述第一子开缝111与导电环体11的轴线之间形成的夹角b为45°，则θ＝45°，代入上述公式为：|S|＝|E|cos45°×|H|sin45°×sin45°。由此可知，通过上述第一子开缝111的能流密度大于通过现有技术中沿导电环体11的轴向设置的开缝的能流密度，因此，本发明增加了电磁场的总耦合效率，从而降低需要向射频线圈13加载的射频功率，即，即使加载较低的射频功率，也能够实现等离子体启辉，维持一定的处理速率，以及使用上电极单独启辉，以在基片介质层为low-k材料时，减少对该基片介质层的损伤。另外，加载较低的射频功率还可以避免法拉第屏蔽件的温度过高，从而减小了反应腔室颗粒污染的风险。
优选的，该第一子开缝111与导电环体11的轴线之间形成的夹角b为45°，这可以使通过第一子开缝111的长度最大，从而能流密度最大，进而最大程度地增加了电磁场的总耦合效率。
需要说明的是，在本实施例中，第一子开缝111呈直线状，但是本发明并不局限于此，在实际应用中，第一子开缝111还可以呈折线状或者弧线状等等，只要能够增加电磁场在导电环体11的圆周方向上的磁场分量的耦合效率，以达到增加该电磁场的总耦合效率的目的即可，例如，使导电环体11的轴线在导电环体11的展开图中的投影与第一子开缝111的延伸方向之间的夹角的绝对值大于0度且小于90度。所谓第一子开缝111的延伸方向，指的是在导电环体11的展开图中，第一子开缝111的下端与其上端之间的连线的方向。
作为本实施例的一个优选方案，所述开缝还可以包括第二子开缝，并且在导电环体11的展开图中，第二子开缝的延伸方向与第一子开缝111的延伸方向之间的夹角大于0度。也就是说，只要是延伸方向与第一子开缝111的延伸方向不同的子开缝就统称为第二子开缝。第二子开缝的数量可以一个或多个，并且多个第二子开缝的延伸方向可以相同，也可以彼此不同。
例如，如图4C所示，上述开缝在上述第一子开缝111的基础上，还增设了第二子开缝112，该第二子开缝112沿导电环体11的轴向设置，且与第一子开缝111相互交叉，形成夹角c。在图4C所示的导电环体的展开图中，该开缝在导电环体11的轴向上的投影的长度为La，该开缝在导电环体11的周向上的投影的长度为Lc，从图4C中可以清晰地看出，La和Lc均大于零。本实施例中，开缝包括第一子开缝111和第二子开缝112，借助第二子开缝112，可以进一步增加上述磁场分量A的耦合效率。
在本实施例中，第一子开缝111自导电环体11的上端面延伸至导电环体11的上端面而使导电环体11完全断开，以避免在导电环体11中产生涡流损耗和发热。而且，第二子开缝112未延伸至导电环体11的上端面和下端面而是位于两个端面之间，即，第二子开缝112未将导电环体11完全断开，从而保持导电环体11的整体式结构。
为了在不影响磁场耦合效率的前提下，尽可能地避免位于法拉第屏蔽件 内侧的零件(例如介质筒)在开缝处被腐蚀，该开缝的宽度hw的取值范围在2～10mm，优选在5-8mm。对应于前述关于开缝的宽度的定义，本实施例中，开缝的宽度hw指的是上述第一子开缝111和第二子开缝112的宽度，且第一子开缝111和第二子开缝112的宽度可以相同，也可以不同。
如图4D所示，为了避免位于法拉第屏蔽件内侧的零件(例如介质筒)在开缝处被腐蚀，还可以在开缝中填充介质材料12，该介质材料12例如为陶瓷。电磁场可以透过该介质材料12馈入反应腔室。
需要说明的是，在本实施例中，第二子开缝112为一个，但是本发明并不局限于此，在实际应用中，如图4E所示，上述第二子开缝112还可以为多个，且多个第二子开缝112沿第一子开缝111的延伸方向(倾斜方向)间隔分布。并且，在图4E所示的导电环体的展开图中，该开缝在导电环体11的轴向上的投影的长度为La，该开缝在导电环体11的周向上的投影的长度为Lc，从图4E中可以清晰地看出，La和Lc均大于零。
还需要说明的是，在本实施例中，第二子开缝112与第一子开缝111相互交叉，但是，本发明并不局限于此，在实际应用中，第二子开缝112与第一子开缝111也可以相互分离。
还需要说明的是，在实际应用中，上述第一子开缝可以为一个或多个，且多个第一子开缝沿导电环体11的圆周方向间隔且均匀分布，以保证工艺均匀性。容易理解，第一子开缝和/或第二子开缝的数量越多，电磁场的总耦合效率越大。
请参阅图5，本发明第二实施例提供的法拉第屏蔽件，其包括导电环体21，在该导电环体21上形成有开缝，该开缝包括两个沿导电环体21的周向延伸的第一子开缝212，且两个第一子开缝212沿导电环形21的轴向间隔分布。并且，导电环体21的轴线在导电环体21的展开图中的投影与第一子开缝212的延伸方向之间的夹角为90°，从而使导电环体21的圆周方向上的电场分量B能够通过第一子开缝212馈入反应腔室内。
而且，上述开缝还包括沿导电环体21的轴向延伸的第二子开缝211，该第二子开缝211与第一子开缝212相互交叉。由于第二子开缝211沿导电环体21的轴向延伸，其能够将导电环体11的轴向上的磁场分量A馈入反应腔室内。
从图5所示的导电环体的展开图中可以清晰地看出，该开缝在导电环体21的轴向上的投影的长度为La，该开缝在导电环体21的周向上的投影的长度为Lc，且La和Lc均大于零。借助上述第一子开缝212和第二子开缝211，可以分别将上述电场分量B和磁场分量A馈入反应腔室内，这与现有技术只能馈入磁场分量A相比，增加了该电磁场的总耦合效率，从而可以降低需要向射频线圈加载的射频功率，即，即使加载较低的射频功率，也能够实现等离子体启辉，维持一定的处理速率，以及使用上电极单独启辉，以在基片介质层为low-k材料时，减少对该基片介质层的损伤。另外，加载较低的射频功率还可以避免法拉第屏蔽件的温度过高，从而减小了反应腔室颗粒污染的风险。
在本实施例中，第二子开缝211自导电环体11的上端面延伸至导电环体11的上端面而导电环体11完全断开，以避免在导电环体11中产生涡流损耗和发热。而且，每个第一子开缝212未延伸至导电环体11的上端面和下端面而是位于两个端面之间，即，第一子开缝212在导电环体21的两个端面之间未完全断开导电环体21，从而保持导电环体11的整体式结构。
在本实施例中，第一子开缝212为两个，但是，本发明并不局限于此，在实际应用中，第一子开缝212也可以为一个，或者三个以上，并且多个第一子开缝212与导电环体21的轴线之间形成的夹角可以相同，或者也可以不同。
请参阅图6，本发明第三实施例提供的法拉第屏蔽件，其包括导电环体41，且在导电环体41的圆周方向上划分有多个第一区域411和多个第二区域412，且多个第一区域411和多个第二区域412相间设置，也就是说，第 一区域411的左侧和右侧为第二区域412，第二区域412的左侧和右侧为第一区域411。并且，在每个第一区域411内设置有沿导电环体41的周向延伸的第一子开缝42，第一子开缝42为至少两个，且沿导电环体41的轴向(即，图6中示出的Y方向)间隔分布；在每个第二区域412内设置有沿导电环体41的轴向延伸的第二子开缝43，且第二子开缝43为至少两个，且沿导电环体41的周向(即，图6中示出的X方向)间隔分布。并且，在图6所示的导电环体的展开图中，该开缝在导电环体41的轴向上的投影的长度为La，该开缝在导电环体41的周向上的投影的长度为Lc，从图4E中可以清晰地看出，La和Lc均大于零。借助第一子开缝42和第二子开缝43，同样可以实现分别将上述电场分量B和磁场分量A馈入反应腔室内，从而增加了该电磁场的总耦合效率，进而可以降低需要向射频线圈加载的射频功率。
为了保证工艺均匀性，优选的，多个第一区域411和多个第二区域412沿导电环体41的周向均匀分布。并且，对于每一个第一区域411而言，其中的第一子开缝42皆均匀分布；对于每一个第二区域412而言，其中的第二子开缝43皆均匀分布。
优选的，第一区域411在导电环体41的周向上的宽度为50～200mm，以最大限度地降低涡流。所谓第一区域411在导电环体41的周向上的宽度，指的是在导电环体41的展开图中，第一区域411在导电环体41的周向上的宽度。
请一并参阅图7A和图7B，本发明第四实施例提供的法拉第屏蔽件，其在上述第一至第三实施例的基础上作了改进。具体地，在前述第一至第三实施例中，对于每一开缝而言，该开缝在导电环体的内环壁上的开口在导电环体的外环壁上的投影与该开缝在导电环体的外环壁上的开口完全重合或部分重合，换言之，在导电环体的俯视图中，该开缝沿导电环体的厚度方向延伸；第四实施例中，在导电环体的俯视图中，该开缝被构造成曲折通道的形式。所谓曲折通道，指的是在导电环体的俯视图中，该开缝的延伸方向不 是与导电环体的厚度方向一致，而是与导电环体的厚度方向呈一定角度t。
具体地，在导电环体31上，且在开缝中设置有阻挡部，该阻挡部使开缝在导电环体31的外环壁与内环壁之间形成曲折通道34。该曲折通道34的延伸方向为开缝的延伸方向，即，为直线l1的延伸方向，导电环体31的厚度方向为直线l2的延伸方向，二者之间的夹角为t。形成曲折通道34，可以在不影响磁场耦合效率的前提下，进一步避免位于法拉第屏蔽件内侧的零件(例如介质筒)在开缝处被腐蚀。
在本实施例中，上述阻挡部为两个，分别为第一阻挡部32和第二阻挡部33，二者分别设置在导电环体31的在开缝处的第一端面311和第二端面312上，第一端面311和第二端面312即为导电环体31被开缝断开、且彼此相对的两个断面。其中，第一阻挡部32自第一端面311朝向第二端面312延伸，且与第二端面312之间具有第一间隙321。第一阻挡部32的延伸方向优选为导电环体31的周向。第二阻挡部33自第二端面312朝向第一端面311延伸，且与第一端面311之间具有第二间隙331。第一阻挡部32和第二阻挡部33之间在导电环体31的径向上具有第三间隙341。第一间隙321、第二间隙331和第三间隙341构成上述曲折通道34。
在实际应用中，上述阻挡部还可以采用其他任意结构，只要能够满足下述设计要求即可：即，能够在导电环体31的径向上形成迷宫式的曲折通道，以避免位于法拉第屏蔽件内侧的零件因存在该开缝而被腐蚀。
下面结合图8A至图8G详细说明开缝被构造成何种曲折通道的图形时可以阻止导电环体内侧的粒子直接穿过该开缝到达导电环体外侧。
请参阅图8A至图8C，在导电环体11的俯视图的局部放大图中，即，在利用垂直于导电环体11轴线的平面对第一子开缝111所在区域进行剖切所得的视图中，第一子开缝111呈弧线状，其中S1为第一子开缝111的外侧面的剖切线，S2为第一子开缝111的内侧面的剖切线，L1为连接第一子开缝111的右上角和右下角的直线，L2为连接第一子开缝111的左上角和右 下角的直线，L3为连接第一子开缝111的右上角和左下角的直线，L4为连接第一子开缝111的左上角和左下角的直线。其中，L1仅与S2的上、下两个端点(即，第一子开缝111的右上角和右下角)相交，且L1处于S2的右侧而不处于S1和S2之间；L2除与S1的上端点和S2的下端点(即，第一子开缝111的左上角和右下角)相交外，还与S2中的B点相交；L3除与S1的下端点和S2的上端点(即，第一子开缝111的右上角和左下角)相交外，还与S2中的C点相交；L4与S1的上、下两个端点(即，第一子开缝111的左上角和左下角)相交。由于L4在除S1的上、下两个端点之外不再与S1和S2相切或者相交且处于S1和S2之间，即，在除第一子开缝111的左上角、左下角、右上角和右下角之外，L4与导电环体31没有任何交点，这样，第一子开缝111中的L4和S2之间的区域便成为使导电环体31的内侧区域和外侧区域沿直线方向贯通的通道，使得导电环体31内侧的粒子可经由该通道直接到达导电环体31外侧，图8C中的点划线箭头即示出导电环体31内侧的粒子经由第一子开缝111直接到达导电环体31外侧的路径。由此可见，图8A至图8C所示第一子开缝111，导电环体11内侧的等离子体可以直接穿过该第一子开缝111，也就是说，当第一子开缝采用图8A至图8C所示的构造时，其不能阻挡等离子体自导电环体11的内侧穿过该第一子开缝111而到达导电环体11的外侧，从而导致位于法拉第屏蔽件内侧的零件(例如介质筒)在该第一子开缝11的位置处被腐蚀。
请参阅图8D和图8E，在导电环体11的俯视图的局部放大图中，即，在利用垂直于导电环体11轴线的平面对第一子开缝111所在区域进行剖切所得的视图中，第一子开缝111呈弧线状。在该实施例中，S1、S2、L1、L2、L3和L4的意义与前述图8A至图8C所示实施例中的相应符号的意义相同，在此不再赘述。其中，L1与S2的上、下两个端点(即，第一子开缝111的右上角和右下角)相交，且L1处于S2的右侧而不处于S1和S2之间；L2除与S1的上端点和S2的下端点(即，第一子开缝111的左上角和右下 角)相交外，还与S2中的B点相交；L3除与S1的下端点和S2的上端点(即，第一子开缝111的右上角和左下角)相交外，还与S2中的C点相交；L4除与S1的上、下两个端点(即，第一子开缝111的左上角和左下角)相交外，还与S2中的D1和D2点相交。在L1、L2、L3和L4中，没有一条直线满足这样的条件：即，在除第一子开缝111的左上角和左下角之外不与S1和S2相切或者相交，且处于S1和S2之间(也就是说，在L1、L2、L3和L4中，没有一条直线在除第一子开缝111的左上角、左下角、右上角和右下角之外还存在与导电环体31相交的点)。这样，当第一子开缝采用图8D和图8E所示的构造时，其不存在能够使导电环体31的内侧区域和外侧区域沿直线方向贯通的通道(或者路径)，使得导电环体31内侧的粒子能够经由该通道(或者路径)而直接到达导电环体31外侧。
请参阅图8F和图8G，在导电环体11的俯视图的局部放大图中，即，在利用垂直于导电环体11轴线的平面对第一子开缝111所在区域进行剖切所得的视图中，第一子开缝111呈折线状。在该实施例中，S1、S2、L1、L2、L3和L4的意义与前述图8A至图8C所示实施例中的相应符号的意义相同，在此不再赘述。其中，L1除与S1的上、下两个端点(即，第一子开缝111的右上角和右下角)相交外，还与S1中的A1点及S2中的A2和A3点相交；L2除与S1的下端点和S2的上端点(即，第一子开缝111的左上角和右下角)相交外，还与S1中的B1和B2点及S2中的B3和B4点相交；L3除与S1的上端点和S2的下端点(即，第一子开缝111的右上角和左下角)相交外，还与S1中的C1点及S2中的C2相交；L4除与S2的上、下两个端点(即，第一子开缝111的左上角和左下角)相交外，还与S1中的D1点和D2点及S2中的D3点相交。在L1、L2、L3和L4中，没有一条直线满足这样的条件：即，在除第一子开缝111的左上角和左下角之外不与S1和S2相切或者相交，且处于S1和S2之间(也就是说，在L1、L2、L3和L4中，没有一条直线在除第一子开缝111的左上角、左下角、右上角和 右下角之外还存在与导电环体31相交的点)。这样，当第一子开缝采用图8F和图8G所示的构造时，其不存在能够使导电环体31的内侧区域和外侧区域沿直线方向贯通的通道(或者路径)，使得导电环体31内侧的粒子能够经由该通道(或者路径)而直接到达导电环体31外侧。
通过上面描述可以发现如下规律：在L1、L2、L3和L4中，只要有任何一条直线在除开缝的左上角、左下角、右上角和右下角之外的位置不与S1和S2相切或者相交且处于S1和S2之间，导电环体内侧的粒子就可以直接穿过该开缝到达导电环体外侧，也就是说，该开缝不能阻挡粒子自导电环体的内侧直接穿过该开缝而到达导电环体的外侧，从而导致位于法拉第屏蔽件内侧的零件(例如介质筒)在开缝处被腐蚀。优选地，将开缝构造成如下形式的曲折通道：即，在导电环体的俯视图中，L1、L2、L3和L4中的每一条直线均不满足这样的条件：即，该直线在除开缝的左上角、左下角、右上角和右下角之外的位置不与S1和S2相切或者相交，且处于S1和S2之间。
综上所述，本发明上述各个实施例提供的法拉第屏蔽件，其包括导电环体，且在该导电环体上形成有开缝，在该导电环体的展开图中，该开缝在导电环体的轴向上的投影的长度大于零，以及该开缝在导电环体的周向上的投影的长度大于零，用以通过增加电磁场在导电环体的圆周方向上的磁场分量的耦合效率，来增加该电磁场的总耦合效率，从而可以降低需要向射频线圈加载的射频功率，即，即使加载较低的射频功率，也能够实现等离子体启辉，维持一定的处理速率，以及使用上电极单独启辉，以在基片介质层为low-k材料时，减少对该基片介质层的损伤。另外，加载较低的射频功率还可以避免法拉第屏蔽件的温度过高，从而减小了反应腔室颗粒污染的风险。
作为另一个技术方案，如图9所示，本发明实施例还提供一种反应腔室201，在该反应腔室201的侧壁202中设置有介质筒203。在介质筒203的外侧环绕设置有射频线圈204，其通过上匹配器207与上射频电源206电连接，上射频电源206用于向射频线圈204加载射频功率，由射频线圈204产 生的电磁场能够通过介质筒203馈入至反应腔室201中，以激发反应腔室201中的工艺气体形成等离子体。并且，在反应腔室201中还设置有基座9，其通过下匹配器209和下射频电源208电连接，下射频电源208用于向基座9加载射频负偏压，以吸引等离子体刻蚀衬底表面。此外，在介质筒203的内侧环绕设置有法拉第屏蔽件210，用于保护介质筒203不被等离子体刻蚀，同时避免自衬底表面溅射出来的残留物附着在介质筒203的内壁上，从而可以提高介质筒203的能量耦合效率，减少反应腔室201内的颗粒污染。该法拉第屏蔽件210可以接地，或者也可以电位悬浮。
上述法拉第屏蔽件201采用本发明上述各个实施例提供的法拉第屏蔽件。
如图9所示，在本实施例中，射频线圈204为圆柱立体式螺旋线圈，形成圆柱立体式螺旋线圈的缠绕线的截面(本发明所述实施例中，该截面为垂直于该缠绕线的轴线的截面)为圆形。但是，本发明并不局限于此，缠绕线还可以采用其他横截面形状，优选的，如图10所示，射频线圈204’的缠绕线的截面的形状为矩形，且该缠绕线缠绕形成的射频线圈204’沿图中所示的上下延伸形成圆柱立体式螺旋线圈。并且，该缠绕线的宽度W(即，单匝缠绕线在竖直方向上高度)大于横截面为图9所示的截面为圆形的缠绕线的直径，从而可以使截面形状为矩形的缠绕线的截面面积大于截面形状为圆形的缠绕线的截面面积。
圆柱立体式螺旋线圈与法拉第屏蔽件之间的寄生电容的大小与该圆柱立体式螺旋线圈的横截面积成正比。而且，该寄生电容越小，则容性耦合越弱，从而馈入到的反应腔室中的电场强度越弱；反之，寄生电容越大，则容性耦合越强，从而馈入到的反应腔室中的电场强度越强，从而使电场强度足够实现等离子体电场启辉。基于该理论，通过将射频线圈204’采用缠绕线为矩形的圆柱立体式螺旋线圈，且使截面形状为矩形的缠绕线的截面面积大于截面形状为圆形的缠绕线的截面面积，可以增加上述寄生电容，从而可以增 强容性耦合，进而可以增强馈入到的反应腔室内的电场强度。
优选的，截面形状为矩形的缠绕线所形成的圆柱立体式螺旋线圈的任意相邻的两匝缠绕线之间的轴向间距d为6-10mm，这可以防止相邻的两匝缠绕线之间因存在电位差而出现打火现象。
在实际应用中，截面形状为矩形的缠绕线所构成的圆柱立体式螺旋线圈在其径向上的厚度为2-4mm。而且，截面形状为矩形的缠绕线所构成的圆柱立体式螺旋线圈的高度hc不能超过介质筒203的高度，即，截面形状为矩形的缠绕线所构成的圆柱立体式螺旋线圈的上端低于介质筒203的上端，且其下端高于介质筒203的下端。
在实际应用中，上述反应腔室201可以为预清洗腔室。在这种情况下，向上述射频线圈204加载的射频功率的频率可以为2MHz、13.56MHz或者60MHz等等。或者，也可以加载脉冲形成的射频功率。向上述基座9加载的射频功率的频率可以为400KHz、2MHz、13.56MHz或者60MHz等等。或者，也可以加载脉冲形成的射频功率。或者，也可以不向上述基座9加载的射频功率。
本发明实施例提供的反应腔室，其通过采用本发明上述各个实施例提供的上述法拉第屏蔽件，可以降低需要向射频线圈加载的射频功率，从而即使加载较低的射频功率，也能够实现等离子体启辉，维持一定的处理速率，以及使用上电极单独启辉，以在基片介质层为low-k材料时，减少对该基片介质层的损伤。另外，加载较低的射频功率还可以避免法拉第屏蔽件的温度过高，从而减小了反应腔室颗粒污染的风险。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (23)

  1. 一种法拉第屏蔽件，包括导电环体，在所述导电环体上形成有开缝，其特征在于，在所述导电环体的展开图中，所述开缝在所述导电环体的轴向上的投影的长度大于零，以及所述开缝在所述导电环体的周向上的投影的长度大于零。
  2. 根据权利要求1所述的法拉第屏蔽件，其特征在于，所述开缝包括第一子开缝，且所述导电环体的轴线在所述导电环体的展开图中的投影与所述第一子开缝的延伸方向之间的夹角的绝对值大于0度且小于90度。
  3. 根据权利要求2所述的法拉第屏蔽件，其特征在于，所述导电环体的轴线在所述导电环体的展开图中的投影与所述第一子开缝的延伸方向之间的夹角为45°。
  4. 根据权利要求2或3所述的法拉第屏蔽件，其特征在于，所述第一子开缝自所述导电环体的上端面延伸至所述导电环体的下端面，使得所述导电环体在其周向上完全断开。
  5. 根据权利要求4所述的法拉第屏蔽件，其特征在于，所述开缝还包括第二子开缝，在所述导电环体的展开图中，所述第二子开缝的延伸方向与所述第一子开缝的延伸方向之间的夹角大于0度。
  6. 根据权利要求1所述的法拉第屏蔽件，其特征在于，所述开缝包括第一子开缝和第二子开缝，在所述导电环体的展开图中，所述导电环体的轴线的投影与所述第一子开缝的延伸方向之间的夹角等于90度；所述第二子开缝的延伸方向与所述第一子开缝的延伸方向之间的夹角大于0度。
  7. 根据权利要求5或6所述的法拉第屏蔽件，其特征在于，所述第二子开缝自所述导电环体的上端面延伸至所述导电环体的下端面，使得所述导电环体在其周向上完全断开，或者
    所述第二子开缝处于所述导电环体的上端面和下端面之间而未到达所述导电环体的上端面和下端面。
  8. 根据权利要求7所述的法拉第屏蔽件，其特征在于，所述第二子开缝与所述第一子开缝相互交叉。
  9. 根据权利要求8所述的法拉第屏蔽件，其特征在于，所述第二子开缝为一个或多个，在所述第二子开缝为多个的情况下，所述多个第二子开缝沿所述第一子开缝的延伸方向间隔分布。
  10. 根据权利要求9所述的法拉第屏蔽件，其特征在于，所述第一子开缝为多个，所述多个第一子开缝沿所述导电环体的周向均匀分布。
  11. 根据权利要求6所述的法拉第屏蔽件，其特征在于，所述导电环体在其周向上被划分为N个第一区域和M个第二区域，且所述第一区域和所述第二区域相间设置，其中，N和M均为大于或等于1的整数；
    在每个所述第一区域内设置有至少两个第一子开缝，且所述至少两个第一子开缝沿所述导电环体的轴向间隔分布；
    在每个所述第二区域内设置有至少两个第二子开缝，且所述至少两个第二子开缝沿所述导电环体的周向间隔分布。
  12. 根据权利要求11所述的法拉第屏蔽件，其特征在于，多个所述第一区域和多个所述第二区域沿所述导电环体的周向均匀分布；
    对于每一个所述第一区域而言，其中的所述至少两个第一子开缝均匀分布；对于每一个所述第二区域而言，其中的所述至少两个第二子开缝均匀分布。
  13. 根据权利要求11所述的法拉第屏蔽件，其特征在于，所述第一区域在所述导电环体的周向上的宽度为50～200mm。
  14. 根据权利要求1所述的法拉第屏蔽件，其特征在于，在以垂直于所述导电环体的轴线的平面对所述开缝进行剖切所得到的剖切面上，所述开缝被呈现为曲折通道。
  15. 根据权利要求14所述的法拉第屏蔽件，其特征在于，所述开缝呈现为这种形式的曲折通道，即，L1、L2、L3和L4中的每一条直线均不满足如下条件：即，该直线在除所述开缝的左上角、左下角、右上角和右下角之外的位置不与S1和S2相切或者相交，且处于S1和S2之间；其中
    S1为所述开缝的外侧面的剖切线，S2为所述开缝的内侧面的剖切线，L1为连接所述开缝的右上角和右下角的直线，L2为连接所述开缝的左上角和右下角的直线，L3为连接所述开缝的右上角和左下角的直线，L4为连接所述开缝的左上角和左下角的直线。
  16. 根据权利要求15所述的法拉第屏蔽件，其特征在于，所述曲折通道通过在所述开缝中设置阻挡部而形成。
  17. 根据权利要求16所述的法拉第屏蔽件，其特征在于，所述阻挡部为两个，分别为第一阻挡部和第二阻挡部，二者分别设置在所述导电环体的在所述开缝处的第一端面和第二端面上，其中
    所述第一阻挡部自所述第一端面朝向所述第二端面延伸，且与所述第二 端面之间具有第一间隙；
    所述第二阻挡部自所述第二端面朝向所述第一端面延伸，且与所述第一端面之间具有第二间隙；
    所述第一阻挡部和第二阻挡部之间在所述导电环体的径向上具有第三间隙；
    所述第一间隙、第二间隙和第三间隙构成所述曲折通道。
  18. 根据权利要求1所述的法拉第屏蔽件，其特征在于，在所述开缝中填充有介质材料。
  19. 根据权利要求1所述的法拉第屏蔽件，其特征在于，所述开缝的宽度的取值范围在2～10mm。
  20. 一种反应腔室，包括介质筒、法拉第屏蔽件和射频线圈，所述射频线圈环绕设置在所述介质筒的外侧；所述法拉第屏蔽件环绕设置在所述介质筒的内侧，其特征在于，所述法拉第屏蔽件采用权利要求1-19任意一项所述的法拉第屏蔽件。
  21. 根据权利要求20所述的反应腔室，其特征在于，所述射频线圈采用缠绕线为矩形的圆柱立体式螺旋线圈。
  22. 根据权利要求21所述的反应腔室，其特征在于，所述圆柱立体式螺旋线圈的任意相邻的两匝缠绕线之间的轴向间距为6-10mm。
  23. 根据权利要求18所述的反应腔室，其特征在于，所述反应腔室为预清洗腔室。
PCT/CN2018/087510 2017-07-27 2018-05-18 法拉第屏蔽件及反应腔室 Ceased WO2019019780A1 (zh)

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