SG11202000515TA - Faraday shield and reaction chamber - Google Patents

Faraday shield and reaction chamber

Info

Publication number
SG11202000515TA
SG11202000515TA SG11202000515TA SG11202000515TA SG11202000515TA SG 11202000515T A SG11202000515T A SG 11202000515TA SG 11202000515T A SG11202000515T A SG 11202000515TA SG 11202000515T A SG11202000515T A SG 11202000515TA SG 11202000515T A SG11202000515T A SG 11202000515TA
Authority
SG
Singapore
Prior art keywords
reaction chamber
faraday shield
faraday
shield
chamber
Prior art date
Application number
SG11202000515TA
Other languages
English (en)
Inventor
Jiansheng Liu
Peng Chen
Wenzhang Wang
Dalei Chang
Kui Xu
Peijun Ding
Xinxian Jiang
Lu Zhang
Zhenning Su
Qiaoli Song
Qiang Jia
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of SG11202000515TA publication Critical patent/SG11202000515TA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32651Shields, e.g. dark space shields, Faraday shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
SG11202000515TA 2017-07-27 2018-05-18 Faraday shield and reaction chamber SG11202000515TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710623037.3A CN107301943A (zh) 2017-07-27 2017-07-27 法拉第屏蔽件及反应腔室
PCT/CN2018/087510 WO2019019780A1 (zh) 2017-07-27 2018-05-18 法拉第屏蔽件及反应腔室

Publications (1)

Publication Number Publication Date
SG11202000515TA true SG11202000515TA (en) 2020-02-27

Family

ID=60133317

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202000515TA SG11202000515TA (en) 2017-07-27 2018-05-18 Faraday shield and reaction chamber

Country Status (4)

Country Link
CN (1) CN107301943A (zh)
SG (1) SG11202000515TA (zh)
TW (1) TWI681436B (zh)
WO (1) WO2019019780A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107301943A (zh) * 2017-07-27 2017-10-27 北京北方华创微电子装备有限公司 法拉第屏蔽件及反应腔室
CN110660635B (zh) * 2018-06-29 2022-08-16 北京北方华创微电子装备有限公司 工艺腔室和半导体处理设备
CN113903649B (zh) * 2021-09-23 2024-04-12 北京北方华创微电子装备有限公司 半导体工艺设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US5763851A (en) * 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
US6518705B2 (en) * 1999-11-15 2003-02-11 Lam Research Corporation Method and apparatus for producing uniform process rates
CN102543645B (zh) * 2010-12-14 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 法拉第屏蔽及等离子体加工设备
CN105097401B (zh) * 2014-05-13 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种反应腔室及半导体加工设备
CN105655221B (zh) * 2014-11-12 2018-11-06 北京北方华创微电子装备有限公司 半导体加工设备
CN105789011B (zh) * 2014-12-24 2018-01-26 中微半导体设备(上海)有限公司 感应耦合型等离子体处理装置
US9767996B2 (en) * 2015-08-21 2017-09-19 Lam Research Corporation Application of powered electrostatic faraday shield to recondition dielectric window in ICP plasmas
CN207183209U (zh) * 2017-07-27 2018-04-03 北京北方华创微电子装备有限公司 法拉第屏蔽件及反应腔室
CN107301943A (zh) * 2017-07-27 2017-10-27 北京北方华创微电子装备有限公司 法拉第屏蔽件及反应腔室

Also Published As

Publication number Publication date
WO2019019780A1 (zh) 2019-01-31
CN107301943A (zh) 2017-10-27
TWI681436B (zh) 2020-01-01
TW201911362A (zh) 2019-03-16

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