WO2019001069A1 - 一种显示基板及显示装置 - Google Patents

一种显示基板及显示装置 Download PDF

Info

Publication number
WO2019001069A1
WO2019001069A1 PCT/CN2018/081886 CN2018081886W WO2019001069A1 WO 2019001069 A1 WO2019001069 A1 WO 2019001069A1 CN 2018081886 W CN2018081886 W CN 2018081886W WO 2019001069 A1 WO2019001069 A1 WO 2019001069A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
display substrate
layer
threshold
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/081886
Other languages
English (en)
French (fr)
Inventor
梁志凡
张伟
曾诚
何宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Chengdu BOE Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US16/328,326 priority Critical patent/US11251409B2/en
Publication of WO2019001069A1 publication Critical patent/WO2019001069A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80517—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means

Definitions

  • the present disclosure relates to the field of display technology, and in particular to a display substrate and a display device.
  • OLED Organic Light-Emitting Diode
  • OLED devices have many advantages such as low power consumption, high contrast, wide viewing angle, etc., and are currently widely used as display devices.
  • the OLED device uses an organic light-emitting material to form an organic light-emitting layer. When electrons and holes are combined in the organic light-emitting layer, the organic light-emitting layer emits light, thereby realizing the display function of the OLED device.
  • the top-emitting OLED device comprises a transparent cathode, an organic functional layer and a high reflectivity anode.
  • the high reflectivity anode can improve the luminous efficiency of the OLED device, but the ambient light around the display device is also reflected by the high reflectivity anode when it is illuminated on the OLED device. The stronger the ambient light, the more the high reflectivity anode reflects back. Strong, the display contrast of OLED devices is degraded, seriously affecting the user experience.
  • a filter film is disposed on the top-emitting OLED device to absorb part of the ambient light, but the light of the wavelength corresponding to the filter film is not absorbed, and the light of the part of the wavelength is still transmitted through the filter film by the high reflectivity anode. When the ambient light is strong, the display contrast will still be degraded.
  • the transparent cathode can be set as a black cathode with a relatively high ambient light absorption rate, but the cathode with a relatively high light absorption rate absorbs the ambient light and absorbs the light emitted by the OLED device, thereby causing the OLED.
  • the luminous efficiency of the device is seriously degraded.
  • the technical problem to be solved by the present disclosure is to provide a display substrate and a display device capable of ensuring display contrast of a display device while ensuring luminous efficiency of the OLED device.
  • At least one embodiment of the present disclosure provides a display substrate including a first electrode structure, an organic light emitting layer, and a second electrode structure, which are sequentially disposed on a substrate, the display substrate further comprising: light emitting on the display substrate a filter film on the side, wherein a light absorption rate of the first electrode structure or the second electrode structure is greater than a first threshold.
  • the second electrode structure when the light absorption rate of the second electrode structure located on the light exiting side of the display substrate is greater than a first threshold, from a direction close to the organic light emitting layer to a direction away from the organic light emitting layer,
  • the second electrode structure includes: a second transparent electrode film; a phase difference layer, the phase difference layer has an thickness of an odd multiple of a half wavelength of visible light; and the light absorbing layer has a light reflectance lower than that of the light absorbing layer
  • the second threshold and the light absorption rate of the light emitted to the organic light-emitting layer is less than a third threshold.
  • the display substrate includes a green pixel region, a red pixel region, and a blue pixel region.
  • the display substrate further includes the light absorbing layer away from the organic a reflective absorbing film on one side of the luminescent layer, the reflective absorbing film being capable of forming a microcavity with the second transparent electrode film, and the reflectance of the reflective absorbing film is less than a fourth threshold, and light absorbing the ambient light The rate is greater than the fifth threshold.
  • the second electrode structure further includes a light-assisted layer on the light-emitting side of the display substrate for improving the light-emitting efficiency of the display substrate.
  • the first electrode structure comprises: a first transparent electrode film; a phase difference layer, the phase difference layer has an thickness of an odd multiple of a half wavelength of visible light; and the reflective film has a light reflectance greater than a sixth Threshold.
  • the first electrode structure further includes: a light absorbing layer between the first transparent electrode film and the phase difference layer, wherein the light absorbing layer has a light reflectance lower than a second threshold and a light absorption rate less than a third threshold, the reflected light at the interface between the light absorbing layer and the phase difference layer and the light reflected back by the reflective film through the phase difference layer are The light absorbing layer interferes.
  • the phase difference layer is made of Alq 3 , MoO 3 , LiF, or MgF 2 .
  • the light absorbing layer is made of Alq 3 doped Ag.
  • the reflective absorbing film is made of Al, Cr or AgMg.
  • the first electrode structure is an anode and the second electrode structure is a cathode, the first threshold being 40% or 45%.
  • the second threshold is 30% and the third threshold is 15%.
  • the fourth threshold is 20% and the fifth threshold is 1.5%.
  • the reflective absorbing film has a reflectance of from 2% to 20% and a light absorption of from 1.5% to 15%.
  • the photo-assisted layer is made of an inorganic or organic material such as ZnSe, LiF, or the like.
  • the sixth threshold is 90%.
  • Embodiments of the present disclosure also provide a display device including the display substrate as described above.
  • Embodiments of the present disclosure have the following advantageous effects: in the above solution, an electrode structure having a strong light absorptivity is combined with a filter film, and ambient light is mostly absorbed after passing through the filter film, and then passed through the electrode structure. Further absorption of ambient light, since the filter film has absorbed most of the ambient light, the light absorption rate of the electrode structure does not have to be set too high, so that the reflectivity of the display substrate to ambient light can be required, thereby ensuring the OLED device. The luminous efficiency will hardly decrease.
  • FIG. 1 is a schematic structural view of a display substrate according to an embodiment of the present disclosure
  • FIG. 2 is a schematic diagram of a cathode structure of a red sub-pixel and a blue sub-pixel according to an embodiment of the present disclosure
  • FIG. 3 is a schematic view showing a cathode structure of a green sub-pixel according to an embodiment of the present disclosure
  • FIG. 4 is a schematic diagram showing a light absorption curve of a cathode structure of a red sub-pixel and a blue sub-pixel according to an embodiment of the present disclosure
  • FIG. 5 is a schematic diagram showing a transmittance curve of a cathode structure of a red sub-pixel and a blue sub-pixel according to an embodiment of the present disclosure
  • FIG. 6 is a schematic diagram of a light absorption curve of a cathode structure of a green sub-pixel according to an embodiment of the present disclosure
  • FIG. 7 is a schematic diagram showing a transmittance curve of a cathode structure of a green sub-pixel according to an embodiment of the present disclosure
  • FIG. 8 is a schematic diagram of a cathode structure of a red sub-pixel and a blue sub-pixel according to an embodiment of the present disclosure
  • FIG. 9 is a schematic diagram of a cathode structure of a green sub-pixel according to an embodiment of the present disclosure.
  • FIG. 10 is a schematic view showing an anode structure according to another embodiment of the present disclosure.
  • Figure 11 is a schematic view showing the structure of an anode according to another embodiment of the present disclosure.
  • S1 is a light absorption curve of the light emitted from the display substrate by the cathode structure of the blue sub-pixel and the red sub-pixel
  • S2 is the red light absorption curve of the cathode structure of the red sub-pixel to ambient light
  • S3 is the light absorption curve of the cathode structure of blue sub-pixels to ambient light
  • S4 is a light transmittance curve of the cathode structure of the blue sub-pixel and the red sub-pixel emitting light to the display substrate
  • S5 is the light absorption curve of the cathode structure of the green sub-pixel to ambient light
  • S6 is a light absorption curve of the light emitted from the cathode structure of the green sub-pixel to the display substrate
  • S7 is a light transmittance curve of the cathode structure of the green sub-pixel emitting light to the display substrate
  • the embodiments of the present disclosure are directed to the problem that the luminous efficiency of the OLED device is not high in the related art, and provide an OLED display device and a display device capable of ensuring display contrast of the display device while ensuring luminous efficiency of the OLED device.
  • An embodiment of the present disclosure provides a display substrate including a first electrode structure, an organic light emitting layer, and a second electrode structure, which are sequentially disposed on a substrate, the display substrate further comprising: a filter film on a light emitting side of the display substrate Wherein the light absorption rate of the first electrode structure or the second electrode structure is greater than a first threshold.
  • the light absorption rate of the first electrode structure to ambient light needs to be greater than 40%, that is, the light absorption rate of the first electrode structure is greater than the first
  • the first threshold is 40%; or the absorption rate of light by the second electrode structure needs to be greater than 45%, and the light absorption rate of light emitted from the OLED needs to be less than 30%, that is, the light in the second electrode structure
  • the first threshold is 45%.
  • the electrode structure having a strong light absorptivity is combined with the filter film, and the ambient light is mostly absorbed after passing through the filter film, and then further absorbed by the electrode structure through the electrode structure, due to the filtering.
  • the film has absorbed most of the ambient light. Therefore, the light absorption rate of the electrode structure does not have to be set too high, so that the reflectance of the display substrate to ambient light can be required, thereby ensuring that the luminous efficiency of the OLED device hardly decreases.
  • the filter film and the electrode structure can be made thin, it is easier to realize a flexible display.
  • the structure of the first electrode structure and the second electrode structure are relatively simple, and can be composed of only a few thin films, which is easy to implement in the process; in addition, the filter film technology is very mature in the display industry, so the implementation cost is very low. .
  • the second electrode structure when the light absorption rate of the second electrode structure located on the light exiting side of the display substrate is greater than a first threshold, from a direction close to the organic light emitting layer to a direction away from the organic light emitting layer,
  • the second electrode structure includes: a second transparent electrode film; a phase difference layer, the phase difference layer has an thickness of an odd multiple of a half wavelength of visible light, and the phase difference layer may be Alq 3 , MoO 3 , LiF or A material such as MgF 2 ; a light absorbing layer, wherein the light absorbing layer has a light reflectance lower than a second threshold and the light absorptivity is less than a third threshold, the second threshold may be 30%, and the third threshold may be 15%.
  • the ambient light is reflected on the upper and lower surfaces of the phase difference layer.
  • the optical thickness of the phase difference layer is an odd multiple of the half wavelength ⁇ /2 of the light
  • the two reflected lights are interferometrically canceled, and the reflected light is maximized by the light absorbing layer.
  • absorb Although the light absorbing layer has a high light absorption rate, it can absorb a large amount of ambient light, but absorbs light emitted from the organic light-emitting layer to cause light emission efficiency of the OLED, so that the light absorption rate of the light absorbing layer cannot be too high, specifically, light absorption.
  • the light absorption rate of the layer is 5%-15%, and the light reflectance is 5%-30%.
  • a film having a low reflectance and a low light absorption coefficient such as a thin film of Alq 3 doped Ag as a light absorbing layer, and light absorption.
  • the thickness of the layer can range from 10 nanometers to 200 nanometers.
  • the display substrate includes a green pixel region, a red pixel region, and a blue pixel region.
  • the display substrate further includes the light absorbing layer away from the organic a reflective absorbing film on one side of the luminescent layer, the reflective absorbing film being capable of forming a microcavity with the second transparent electrode film, and the reflectance of the reflective absorbing film is less than a fourth threshold, and the fourth threshold may be 20 %, the light absorption rate is greater than the fifth threshold, and the fifth threshold may be 1.5%.
  • a reflective absorbing film is additionally provided in the green pixel region, and a weak microcavity is formed between the reflective absorbing film and the electrode film to increase light absorption, specifically, reflection absorption.
  • the reflectance of the film is 2%-20%, and the light absorptivity is 1.5%-15%.
  • a thin metal material having a high light absorption coefficient such as Al, Cr, AgMg or the like can be used as the reflection absorbing film, and the thickness of the reflection absorbing film can be used. It can be from 1 nanometer to 30 nanometers.
  • the second electrode structure further includes a light-assisting layer on the light-emitting side of the display substrate for improving the light-emitting efficiency of the display substrate, and the light-assisted layer can improve the light-emitting efficiency of the display substrate.
  • the thickness of the light-assisted layer may be from 10 nm to 200 nm, and is used for adjusting the absorptance and reflectance of the second electrode structure for ambient light and OLED light emission.
  • the light-assisted layer may be inorganic or organic such as ZnSe or LiF. material.
  • the light absorption rate of the first electrode structure on the non-light-emitting side of the display substrate is greater than a first threshold, from a direction close to the organic light-emitting layer to a direction away from the organic light-emitting layer.
  • the first electrode structure comprises: a first transparent electrode film; a phase difference layer, wherein the thickness of the phase difference layer is an odd multiple of a half wavelength of visible light; and the reflective film, the light reflectance of the reflective film is greater than a sixth threshold.
  • the sixth threshold can be 90%.
  • the light reflectance of the reflective film is 90%-100%; the reflected light at the interface between the first transparent electrode film and the phase difference layer interferes with the light reflected by the reflective film by the phase difference layer, and finally is A transparent electrode film is absorbed in a large amount.
  • the first electrode structure further includes: a light absorbing layer between the first transparent electrode film and the phase difference layer, wherein the light absorbing layer has a light reflectance lower than a second threshold and a light absorption rate less than a third threshold, the reflected light at the interface between the light absorbing layer and the phase difference layer and the light reflected back by the reflective film through the phase difference layer are The light absorbing layer interferes, and the reflected light at the interface between the light absorbing layer and the phase difference layer interferes with the light reflected by the reflective film by the phase difference layer. Finally, it is absorbed by the light absorbing layer in a large amount.
  • the light absorbing layer has a high light absorption rate, it can absorb a large amount of ambient light, but absorbs the light emitted from the organic luminescent layer to cause the light emission efficiency of the OLED to be low, and the light absorbing rate of the light absorbing layer cannot be too high.
  • the light absorbing layer has a light absorptivity of 5% to 15%, and a light reflectance of 5% to 30%, and a film having a low reflectance and a low light absorption coefficient such as an Alq 3 doped Ag film can be used.
  • the light absorbing layer may have a thickness of 10 nm to 200 nm.
  • the technical solution of the present disclosure specifically has two implementation manners, one implementation manner is that the light absorption rate of the anode of the display substrate is relatively high, and another implementation manner is that the light absorption rate of the cathode of the display substrate is relatively high. .
  • the present invention is described in the following with reference to the accompanying drawings. It is understood that the specific embodiments described herein are only used to illustrate and explain the present disclosure.
  • the light absorption rate of the cathode structure located on the light-emitting side of the display substrate is relatively high, and the light absorption rate of the anode structure can be designed to be relatively low (need to be less than 10%).
  • the light reflectance is relatively high (higher is required) At 90%).
  • the method of manufacturing the display substrate of the present embodiment includes the steps of: cleaning the substrate 1 on which the array circuit is formed, and drying. Then, the substrate 1 is placed in a chamber of high vacuum, the anode structure 11 is vapor-deposited, the organic functional layer 2 is vapor-deposited, and the organic functional layer 2 is vapor-deposited, and then the cathode structure 3 is vapor-deposited.
  • 2 is a schematic view showing a cathode structure of a red sub-pixel and a blue sub-pixel
  • FIG. 3 is a schematic view showing a cathode structure of a green sub-pixel.
  • the transparent cathode film 6 having a thickness of 5 nm to 30 nm is first deposited, for example, a translucent AgMg composite cathode film, Ag. Cathode film, etc.
  • the phase difference layer 7 and the light absorbing layer 8 are sequentially vapor-deposited on the red sub-pixel and the blue sub-pixel using a mask, wherein the phase difference layer 7 is made of Alq 3 , MoO 3 , LiF or MgF 2 , and the light absorbing layer is used. Alq 3 is doped with Ag. The light is reflected on the upper and lower surfaces of the phase difference layer 7.
  • the optical thickness of the phase difference layer is an odd multiple of the half wavelength ⁇ /2 of the light
  • the two reflected lights are interfered by each other, and the reflected light is maximized by the light absorbing layer 8. Absorbed.
  • the thickness of the light absorbing layer 8 is from 10 nm to 200 nm, and the reflectance of the light absorbing layer 8 cannot be too high. Too high ambient light will be reflected back while the light emitted by the OLED will be reflected and then absorbed by the cathode structure, resulting in The reflection of ambient light is high and the efficiency of OLED light emission is low.
  • the absorption coefficient of the light absorbing layer is high, it can absorb a large amount of ambient light, but it absorbs the light emitted by the OLED, which causes the light-emitting efficiency of the OLED to be low. Therefore, a film having a low reflectance, a low light absorption coefficient of 5% to 30%, and an absorption ratio of 5% to 15%, such as an Alq 3 doped Ag film, can be used as the light absorbing layer 8.
  • the specific process is to first evaporate a transparent cathode film 6 having a thickness of 5 nm to 30 nm, such as a translucent AgMg composite cathode film, an Ag cathode film, or the like. Then, the retardation layer 7, the light absorbing layer 8, and the reflection absorbing film 9 are sequentially vapor-deposited on the green sub-pixels using a mask.
  • the phase difference layer 7 is made of Alq 3 , MoO 3 , LiF or MgF 2
  • the light absorbing layer is made of Alq 3 doped Ag. The light is reflected on the upper and lower surfaces of the phase difference layer 7.
  • the optical thickness of the phase difference layer is an odd multiple of the half wavelength ⁇ /2 of the light
  • the two reflected lights are interfered by each other, and the reflected light is maximized by the light absorbing layer 8. Absorbed.
  • the thickness of the light absorbing layer 8 is from 10 nm to 200 nm, and the reflectance of the light absorbing layer 8 cannot be too high. Too high ambient light will be reflected back while the light emitted by the OLED will be reflected and then absorbed by the cathode structure, resulting in The reflection of ambient light is high and the efficiency of OLED light emission is low.
  • the absorption coefficient of the light absorbing layer is high, it can absorb a large amount of ambient light, but it absorbs the light emitted by the OLED, which causes the light-emitting efficiency of the OLED to be low. Therefore, a film having a low reflectance and a low light absorption coefficient such as an Alq 3 doped Ag film can be used as the light absorbing layer 8.
  • the thickness of the reflection-absorbing film 9 is from 1 nm to 30 nm, and a weak microcavity is formed between the reflection-absorbing film 9 and the transparent cathode film 6, so that light absorption is increased.
  • the reflectance of the reflection-absorbing film 9 is not too high, and the reason is the same as that of the light-absorbing layer 8, and therefore a thin metal material having a high light absorption coefficient such as Al, Cr, AgMg or the like is generally used.
  • the thin film encapsulation layer 4 and the filter film 5 are formed.
  • FIG. 4 is the absorption of light by the cathode structure of the red sub-pixel and the blue sub-pixel.
  • FIG. 5 is a schematic diagram of the transmittance curve of the cathode structure of the red sub-pixel and the blue sub-pixel
  • FIG. 6 is a schematic diagram of the absorption curve of the cathode structure of the green sub-pixel
  • FIG. 7 is a green sub-pixel. Schematic diagram of the transmission curve of the cathode structure to light.
  • S1 is a light absorption curve of the light emitted from the cathode structure of the blue sub-pixel and the red sub-pixel to the display substrate, and the absorption rate of the light emitted from the display substrate at the blue light of 460 nm is 14.8%, and the red light at 630 nm is opposite.
  • the absorptance of light emitted from the display substrate was 22.1%.
  • the cathode structure has a light absorption rate curve for ambient light, and the absorption rate of ambient blue light at 460 nm reaches 63.9%.
  • S4 is a light transmittance curve of the light emitted from the cathode structure of the blue sub-pixel and the red sub-pixel to the display substrate, the transmittance of the light of 460 nm emitted from the display substrate is 61%, and the red light of 620 nm emitted from the display substrate The transmittance is 69.5%, and the dark red light at 630 nm is 68.8%.
  • S5 is a light absorption curve of the cathode structure of the green sub-pixel to ambient light, and the green light absorption rate to the environment of 530 nm reaches 47.2%.
  • S6 is a light absorption curve of light emitted from the cathode structure of the green sub-pixel to the display substrate, and the absorption at 530 nm is as low as 18.1%.
  • S7 is a light transmittance curve of the cathode structure of the green sub-pixel emitting light to the display substrate at 530 nm. The maximum can reach 65.9%.
  • the absorption rate of the cathode structure to ambient light will not reach 90%, but the absorption of the cathode structure with the filter film can make the overall reflectivity of the OLED display substrate reach the requirement.
  • a light auxiliary layer 10 may be added on the cathode structure, and the thickness of the light auxiliary layer 10 is 10 nm to 200. Nano, used to adjust the absorption and reflectivity of the cathode structure for ambient light and light emitted by the OLED.
  • the light absorption rate of the anode structure on the non-light-emitting side of the display substrate is relatively high, and the light absorption rate design of the cathode structure is relatively low (need to be less than 20%). High (requires more than 50%).
  • the method of manufacturing the display substrate of the present embodiment includes the steps of: cleaning the substrate 1 having the circuit, and then drying. Then, the substrate 1 is placed in a chamber of high vacuum, the anode structure 11 is vapor-deposited, the organic functional layer 2 is vapor-deposited, and the organic functional layer 2 is vapor-deposited, and then the cathode structure 3 is vapor-deposited.
  • phase difference layer 7 having an optical multiple of an odd multiple of a half wavelength ⁇ /2 of optical thickness is deposited.
  • the material of the phase difference layer 7 may be selected from an organic material such as Alq 3 or an inorganic material such as LiF or MgF 2 .
  • a transparent anode film 13 having a thickness of 10 nm to 40 nm is evaporated, and Al, Cr, Ag, etc. can be used as the material of the transparent anode film 13.
  • the organic function is sequentially evaporated on the top.
  • the thin film encapsulation layer 4 and the filter film 5 are formed.
  • a light absorbing layer 8 and a reflection at the interface between the light absorbing layer 8 and the phase difference layer 7 may be formed between the transparent anodic film 12 and the phase difference layer 7.
  • the light reflected by the reflective film 12 between the light and the transmission phase difference layer 7 interferes with the light absorbing layer 8 and is absorbed by the light absorbing layer 8.
  • the present disclosure combines a cathode structure or an anode structure having a high light absorptivity with a filter film, and it is easier to achieve reflection of ambient light by the OLED display substrate by using an electrode structure or a filter film having a higher light absorptivity alone. It is easy to achieve flexibility and less loss of light extraction efficiency.
  • the above embodiment is merely for exemplifying the composition of the electrode structure, and the electrode structure is composed in various ways, and is not limited to the above embodiment.
  • Embodiments of the present disclosure also provide a display device including the display substrate as described above.
  • the display device may be any product or component having a display function, such as a television, a display, a digital photo frame, a mobile phone, a tablet computer, etc., wherein the display device further includes a flexible circuit board, a printed circuit board, and a backboard.
  • the display device may also include other related electronic circuits or originals such as power and drive circuits and the like.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本公开提供了一种显示基板及显示装置。所述显示基板包括依次位于衬底基板上的第一电极结构、有机发光层和第二电极结构，所述显示基板还包括：位于所述显示基板出光侧的滤光膜，其中，所述第一电极结构或所述第二电极结构的光吸收率大于第一阈值。

Description

一种显示基板及显示装置
相关申请的交叉引用
本申请主张在2017年6月28日在中国提交的中国专利申请号No.201710505815.9的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示技术领域，特别是指一种显示基板及显示装置。
背景技术
OLED(Organic Light-Emitting Diode，有机发光二极管)器件具有低能耗、对比度高、视角广等诸多优点，是目前受到广泛关注的一种显示器件。OLED器件采用有机发光材料制作有机发光层，当有电子和空穴在有机发光层中结合时，有机发光层发光，从而实现OLED器件的显示功能。
其中，顶发射OLED器件包括透明阴极、有机功能层、高反射率阳极三部分。高反射率阳极可以提高OLED器件的发光效率，但是显示装置周围的环境光照射在OLED器件上时也会被高反射率阳极反射回去，环境光越强，高反射率阳极反射回去的光也越强，OLED器件的显示对比度下降，严重影响用户的体验。
在顶发射OLED器件上设置滤光膜可以吸收部分环境光，但是与滤光膜相对应波长的光并不会被吸收，这部分波长的光仍会透过滤光膜被高反射率阳极反射，当环境光较强时，显示对比度依然会下降地比较严重。
为了保证屏幕的对比度，可以将透明阴极设置为对环境光吸收率比较高的黑色阴极，但光吸收率比较高的阴极在吸收环境光的同时也会吸收OLED器件发出来的光，从而造成OLED器件的发光效率严重下降。
发明内容
本公开要解决的技术问题是提供一种显示基板及显示装置，能够在保证OLED器件的发光效率的同时，保证显示装置的显示对比度。
一方面，本公开至少一个实施例提供一种显示基板，包括依次位于衬底基板上的第一电极结构、有机发光层和第二电极结构，所述显示基板还包括：位于所述显示基板出光侧的滤光膜，其中，所述第一电极结构或所述第二电极结构的光吸收率大于第一阈值。
在一些可选的实施例中，在位于所述显示基板出光侧的第二电极结构的光吸收率大于第一阈值时，从靠近所述有机发光层到远离所述有机发光层的方向上，所述第二电极结构依次包括：第二透明电极薄膜；位相差层，所述位相差层的厚度为可见光的半波长的奇数倍；光吸收层，所述光吸收层的光反射率低于第二阈值且对所述有机发光层发出光的光吸收率小于第三阈值。
在一些可选的实施例中，所述显示基板包括绿色像素区域、红色像素区域和蓝色像素区域，在所述绿色像素区域，所述显示基板还包括位于所述光吸收层远离所述有机发光层的一侧的反射吸收薄膜，所述反射吸收薄膜能够与所述第二透明电极薄膜之间形成微腔，且所述反射吸收薄膜的反射率小于第四阈值，对环境光的光吸收率大于第五阈值。
在一些可选的实施例中，所述第二电极结构还包括位于所述显示基板出光侧的用于提高所述显示基板的出光效率的光辅助层。
在一些可选的实施例中，在位于所述显示基板非出光侧的第一电极结构的光吸收率大于第一阈值时，从靠近所述有机发光层到远离所述有机发光层的方向上，所述第一电极结构依次包括：第一透明电极薄膜；位相差层，所述位相差层的厚度为可见光的半波长的奇数倍；反射薄膜，所述反射薄膜的光反射率大于第六阈值。
在一些可选的实施例中，所述第一电极结构还包括：位于所述第一透明电极薄膜和所述位相差层之间的光吸收层，所述光吸收层的光反射率低于第二阈值且光吸收率小于第三阈值，所述光吸收层与所述位相差层之间界面上的反射光与透过所述位相差层被所述反射薄膜反射回来的光在所述光吸收层发生干涉。
在一些可选的实施例中，所述位相差层采用Alq 3、MoO 3、LiF或MgF 2制成。
在一些可选的实施例中，所述光吸收层采用Alq 3掺杂Ag制成。
在一些可选的实施例中，所述反射吸收薄膜采用Al、Cr或AgMg制成。
在一些可选的实施例中，第一电极结构为阳极，第二电极结构为阴极，所述第一阈值为40％或45％。
在一些可选的实施例中，第二阈值为30％，第三阈值为15％。
在一些可选的实施例中，第四阈值为20％，第五阈值为1.5％。
在一些可选的实施例中，反射吸收薄膜的反射率为2％-20％，光吸收率为1.5％-15％。
在一些可选的实施例中，光辅助层采用ZnSe、LiF等无机或有机材料。
在一些可选的实施例中，第六阈值为90％。
本公开实施例还提供了一种显示装置，包括如上所述的显示基板。
本公开的实施例具有以下有益效果：上述方案中，将具有较强光吸收率的电极结构与滤光膜相结合，环境光在经过滤光膜后大部分会被吸收，然后再通过电极结构对环境光进一步吸收，由于滤光膜已经吸收大部分的环境光，因此，电极结构的光吸收率不必设置的太高就可以使得显示基板对环境光的反射率达到要求，从而可以保证OLED器件的发光效率几乎不会下降。
附图说明
图1为本公开一实施例显示基板的结构示意图；
图2为本公开一实施例红色子像素和蓝色子像素的阴极结构示意图；
图3为本公开一实施例绿色子像素的阴极结构示意图；
图4为本公开实施例红色子像素和蓝色子像素的阴极结构对光的吸收率曲线示意图；
图5为本公开实施例红色子像素和蓝色子像素的阴极结构对光的透过率曲线示意图；
图6为本公开实施例绿色子像素的阴极结构对光的吸收率曲线示意图；
图7为本公开实施例绿色子像素的阴极结构对光的透过率曲线示意图；
图8为本公开一实施例红色子像素和蓝色子像素的阴极结构示意图；
图9为本公开一实施例绿色子像素的阴极结构示意图；
图10为本公开另一实施例阳极结构示意图；
图11为本公开另一实施例阳极结构示意图。
附图标记
1基板   2有机功能层   3阴极结构   4薄膜封装层
5滤光膜   6透明阴极薄膜   7位相差层   8光吸收层
9反射吸收薄膜   10光辅助层   11阳极结构
12反射薄膜   13透明阳极薄膜
S1为蓝色子像素和红色子像素的阴极结构对显示基板发出光的光吸收率曲线
S2为红色子像素的阴极结构对环境光的光吸收率曲线
S3为蓝色子像素的阴极结构对环境光的光吸收率曲线
S4为蓝色子像素和红色子像素的阴极结构对显示基板发出光的光透过率曲线
S5为绿色子像素的阴极结构对环境光的光吸收率曲线
S6为绿色子像素的阴极结构对显示基板发出光的光吸收率曲线
S7为绿色子像素的阴极结构对显示基板发出光的光透过率曲线
具体实施方式
为使本公开的实施例要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。
本公开的实施例针对相关技术中OLED器件的发光效率不高的问题，提供一种OLED显示器件及显示装置，能够在保证OLED器件的发光效率的同时，保证显示装置的显示对比度。
本公开实施例提供一种显示基板，包括依次位于衬底基板上的第一电极结构、有机发光层和第二电极结构，所述显示基板还包括：位于所述显示基板出光侧的滤光膜，其中，所述第一电极结构或所述第二电极结构的光吸收率大于第一阈值。
具体地，在第一电极结构为阳极时，第二电极结构为阴极时，所述第一电极结构对环境光的光吸收率需要大于40％，即在第一电极结构的光吸收率大于第一阈值时，第一阈值为40％；或所述第二电极结构对光的吸收率需要 大于45％，而对OLED发出光的光吸收率需要小于30％，即在第二电极结构的光吸收率大于第一阈值时，第一阈值为45％。
本实施例中，将具有较强光吸收率的电极结构与滤光膜相结合，环境光在经过滤光膜后大部分会被吸收，然后再通过电极结构对环境光进一步吸收，由于滤光膜已经吸收大部分的环境光，因此，电极结构的光吸收率不必设置的太高就可以使得显示基板对环境光的反射率达到要求，从而可以保证OLED器件的发光效率几乎不会下降。
由于滤光膜和电极结构都可以做到很薄，因此比较容易实现柔性显示。第一电极结构和第二电极结构的结构均比较简单，可以只由数层很薄的薄膜构成，在工艺上很容易实现；另外滤光膜技术在显示行业已经非常成熟，因此实现成本很低。
在一些可选的实施例中，在位于所述显示基板出光侧的第二电极结构的光吸收率大于第一阈值时，从靠近所述有机发光层到远离所述有机发光层的方向上，所述第二电极结构依次包括：第二透明电极薄膜；位相差层，所述位相差层的厚度为可见光的半波长的奇数倍，所述位相差层可以采用Alq 3、MoO 3、LiF或MgF 2等材料制成；光吸收层，所述光吸收层的光反射率低于第二阈值且光吸收率小于第三阈值，第二阈值可以为30％，第三阈值可以为15％。环境光在位相差层的上下表面反射，当位相差层的光学厚度为光的半波长λ/2的奇数倍时，两束反射光发生干涉相消，反射光会被光吸收层最大限度地吸收。光吸收层的光吸收率高虽然可以吸收大量的环境光，但是又会吸收有机发光层发出的光造成OLED的出光效率低下，因此光吸收层的光吸收率不能太高，具体地，光吸收层的光吸收率为5％-15％，光反射率为5％-30％，可以采用Alq 3掺杂Ag的薄膜等反射率较低光吸收系数不高的薄膜作为光吸收层，光吸收层的厚度可以为10纳米到200纳米。
在一些可选的实施例中，所述显示基板包括绿色像素区域、红色像素区域和蓝色像素区域，在所述绿色像素区域，所述显示基板还包括位于所述光吸收层远离所述有机发光层的一侧的反射吸收薄膜，所述反射吸收薄膜能够与所述第二透明电极薄膜之间形成微腔，且所述反射吸收薄膜的反射率小于第四阈值，第四阈值可以为20％，光吸收率大于第五阈值，第五阈值可以为 1.5％。因为光吸收层对绿光的吸收较少，因此，在绿色像素区域还增加设置了反射吸收薄膜，反射吸收薄膜与电极薄膜之间形成弱的微腔，使光吸收增加，具体地，反射吸收薄膜的反射率为2％-20％，光吸收率为1.5％-15％，可以采用光吸收系数较高的薄的金属材料比如Al、Cr、AgMg等作为反射吸收薄膜，反射吸收薄膜的厚度可以为1纳米到30纳米。
在一些可选的实施例中，所述第二电极结构还包括位于所述显示基板出光侧的用于提高所述显示基板的出光效率的光辅助层，光辅助层能够提高显示基板的出光效率，光辅助层的厚度可以为10纳米到200纳米，用于调节第二电极结构对环境光与OLED所发光的吸收率和反射率，具体地，光辅助层可以采用ZnSe、LiF等无机或有机材料。
在一些可选的实施例中，位于所述显示基板非出光侧的第一电极结构的光吸收率大于第一阈值，从靠近所述有机发光层到远离所述有机发光层的方向上，所述第一电极结构依次包括：第一透明电极薄膜；位相差层，所述位相差层的厚度为可见光的半波长的奇数倍；反射薄膜，所述反射薄膜的光反射率大于第六阈值，第六阈值可以为90％。具体地，反射薄膜的光反射率为90％-100％；在第一透明电极薄膜与位相差层界面上的反射光与透过位相差层被反射薄膜反射回来的光形成干涉，最后被第一透明电极薄膜大量吸收。
在一些可选的实施例中，所述第一电极结构还包括：位于所述第一透明电极薄膜和所述位相差层之间的光吸收层，所述光吸收层的光反射率低于第二阈值且光吸收率小于第三阈值，所述光吸收层与所述位相差层之间界面上的反射光与透过所述位相差层被所述反射薄膜反射回来的光在所述光吸收层发生干涉，在光吸收层与位相差层界面上的反射光与透过位相差层被反射薄膜反射回来的光形成干涉。最后被光吸收层大量吸收，光吸收层的光吸收率高虽然可以吸收大量的环境光，但是又会吸收有机发光层发出的光造成OLED的出光效率低下，光吸收层的光吸收率不能太高，具体地，光吸收层的光吸收率为5％-15％，光反射率为5％-30％，可以采用Alq 3掺杂Ag的薄膜等反射率较低光吸收系数不高的薄膜作为光吸收层，光吸收层的厚度可以为10纳米到200纳米。
本公开的技术方案具体有两种实现方式，一种实现方式是将显示基板的 阳极的光吸收率设计的比较高，另外一种实现方式是将显示基板的阴极的光吸收率设计的比较高。下面结合附图对这两种实现方式进行介绍，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本公开，并不用于限制本公开。
实施方式一
本实施方式是将位于显示基板的出光侧的阴极结构的光吸收率设计的比较高，而阳极结构的光吸收率可以设计的比较低(需要低于10％)光反射率比较高(需要高于90％)。如图1所示，本实施方式的显示基板的制作方法包括以下步骤：将形成有阵列电路的基板1清洗干净后，烘干。然后将基板1放入高真空的腔室中，蒸镀阳极结构11，蒸镀有机功能层2，蒸镀完有机功能层2后，开始蒸镀阴极结构3。其中，图2所示为红色子像素和蓝色子像素的阴极结构的示意图，图3为绿色子像素的阴极结构的示意图。
对于红色子像素和蓝色子像素的阴极结构来说，如图2所示，制作过程为先蒸镀厚度为5纳米到30纳米的透明阴极薄膜6，例如半透明的AgMg复合阴极薄膜、Ag阴极薄膜等。然后使用掩模板在红色子像素和蓝色子像素上依次蒸镀位相差层7和光吸收层8，其中，位相差层7采用Alq 3、MoO 3、LiF或MgF 2制成，光吸收层采用Alq 3掺杂Ag制成。光在位相差层7的上下表面反射，当位相差层的光学厚度为光的半波长λ/2的奇数倍时，两束反射光发生干涉相消，反射光会被光吸收层8最大限度地吸收。光吸收层8的厚度为10纳米到200纳米，光吸收层8的反射率不能太高，太高环境光就会被反射回去同时OLED发射的光也会被反射然后被阴极结构吸收，造成对环境光的反射高并且OLED出光效率低下，光吸收层的吸收系数高虽然可以吸收大量的环境光，但是又会吸收OLED发射的光造成OLED的出光效率低下。因此Alq 3掺杂Ag薄膜等反射率较低光吸收系数不高5％-30％的光反射率、吸收率为5％-15％的薄膜可以作为光吸收层8。
对于绿色子像素的阴极结构来说，如图3所示，具体过程为先蒸镀厚度为5纳米到30纳米的透明阴极薄膜6，例如半透明的AgMg复合阴极薄膜、Ag阴极薄膜等。然后使用掩模板在绿色子像素上依次蒸镀位相差层7、光吸收层8和反射吸收薄膜9。其中，位相差层7采用Alq 3、MoO 3、LiF或MgF 2 制成，光吸收层采用Alq 3掺杂Ag制成。光在位相差层7的上下表面反射，当位相差层的光学厚度为光的半波长λ/2的奇数倍时，两束反射光发生干涉相消，反射光会被光吸收层8最大限度地吸收。光吸收层8的厚度为10纳米到200纳米，光吸收层8的反射率不能太高，太高环境光就会被反射回去同时OLED发射的光也会被反射然后被阴极结构吸收，造成对环境光的反射高并且OLED出光效率低下，光吸收层的吸收系数高虽然可以吸收大量的环境光，但是又会吸收OLED发射的光造成OLED的出光效率低下。因此Alq 3掺杂Ag薄膜等反射率较低光吸收系数不高的薄膜可以作为光吸收层8。反射吸收薄膜9的厚度为1纳米到30纳米，通过反射吸收薄膜9与透明阴极薄膜6之间形成弱的微腔，使光吸收增加。但是反射吸收薄膜9的反射率不能太高，其原因与光吸收层8一样，因此一般采用光吸收系数较高的薄的金属材料比如Al、Cr、AgMg等。
制作完阴极结构后，制作薄膜封装层4和滤光膜5。
对红色子像素、蓝色子像素和绿色子像素的阴极结构的性能进行模拟，模拟结果如图4-图7所示，图4为红色子像素和蓝色子像素的阴极结构对光的吸收率曲线示意图，图5为红色子像素和蓝色子像素的阴极结构对光的透过率曲线示意图，图6为绿色子像素的阴极结构对光的吸收率曲线示意图，图7为绿色子像素的阴极结构对光的透过率曲线示意图。其中，S1为蓝色子像素和红色子像素的阴极结构对显示基板发出光的光吸收率曲线，在460nm的蓝光处对显示基板发出光的吸收率为14.8％，在630nm的红光处对显示基板发出光的吸收率为22.1％。S2为红色子像素的阴极结构对环境光的光吸收率曲线，对630nm的环境深红光的吸收率为52.3％，对620nm的环境红光的吸收率为53.6％；S3为蓝色子像素的阴极结构对环境光的光吸收率曲线，对460nm处的环境蓝光的吸收率达到63.9％。S4为蓝色子像素和红色子像素的阴极结构对显示基板发出光的光透过率曲线，对显示基板发出的460nm的光的透过率达到61％，对显示基板发出的620nm的红光的透过率为69.5％，630nm的深红光68.8％。S5为绿色子像素的阴极结构对环境光的光吸收率曲线，对530nm的环境绿光吸收率达到47.2％。S6为绿色子像素的阴极结构对显示基板发出光的光吸收率曲线，在530nm处的吸收低至18.1％S7为绿色子 像素的阴极结构对显示基板发出光的光透过率曲线，在530nm处最高可达到65.9％。
为了保证阴极结构对OLED发射光的吸收率低，因此阴极结构对环境光的吸收率不会达到90％，但阴极结构配合滤光膜的吸收可以使OLED显示基板的整体反射率达到要求。
在一些可选的实施例中，如图8和图9所示，在蒸镀完阴极结构后，可在阴极结构上面增加一层光辅助层10，光辅助层10的厚度为10纳米到200纳米，用于调节阴极结构对环境光与OLED所发射光的吸收率和反射率。
实施方式二
本实施方式是将位于显示基板的非出光侧的阳极结构的光吸收率设计的比较高，而阴极的结构的光吸收率设计的比较低(需要低于20％)光透过率设计的比较高(需要高于50％)。如图1所示，本实施方式的显示基板的制作方法包括以下步骤：将有电路的基板1清洗干净后，烘干。然后将基板1放入高真空的腔室中，蒸镀阳极结构11，蒸镀有机功能层2，蒸镀完有机功能层2后，开始蒸镀阴极结构3。
如图10所示，在制作阳极结构11时，首先在基板1上制作一层反射薄膜12，然后蒸镀一层厚度为光学厚度为光的半波长λ/2的奇数倍的位相差层7，位相差层7的材料可选择Alq 3等有机材料，也可以选择LiF、MgF 2等无机材料。然后再蒸镀一层厚度为10纳米至40纳米的透明阳极薄膜13，Al、Cr、Ag等可以作为透明阳极薄膜13的材料，阳极结构11制作完成后，然后在上面开始依次蒸镀有机功能层2，阴极结构3。然后制作薄膜封装层4和滤光膜5。
在一些可选的实施例中，如图11所示，还可以在透明阳极薄膜12和位相差层7之间制作光吸收层8，光吸收层8与位相差层7之间界面上的反射光与透过位相差层7被反射薄膜12反射回来的光在光吸收层8发生干涉，被光吸收层8吸收。
本公开将光吸收率较高的阴极结构或阳极结构与滤光膜相结合，相比于单独使用光吸收率较高的电极结构或者滤光膜降低OLED显示基板对环境光的反射更容易达到要求，容易实现柔性，出光效率损失少。上述实施例仅是 为了举例说明电极结构的组成，电极结构的组成方式有多种，并不局限于上述实施例。
本公开实施例还提供了一种显示装置，包括如上所述的显示基板。所述显示装置可以为：电视、显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件，其中，所述显示装置还包括柔性电路板、印刷电路板和背板。所述显示装置还可以包括其它相关的电子电路或原件，例如电源和驱动电路等。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
以上所述是本公开的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开所述原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本公开的保护范围。

Claims (16)

  1. 一种显示基板，包括依次位于衬底基板上的第一电极结构、有机发光层和第二电极结构，所述显示基板还包括：位于所述显示基板出光侧的滤光膜，其中，所述第一电极结构或所述第二电极结构的光吸收率大于第一阈值。
  2. 根据权利要求1所述的显示基板，其中，在位于所述显示基板出光侧的第二电极结构的光吸收率大于第一阈值时，从靠近所述有机发光层到远离所述有机发光层的方向上，所述第二电极结构依次包括：
    第二透明电极薄膜；
    位相差层，所述位相差层的厚度为可见光的半波长的奇数倍；
    光吸收层，所述光吸收层的光反射率低于第二阈值且对所述有机发光层发出光的光吸收率小于第三阈值。
  3. 根据权利要求2所述的显示基板，其中，所述显示基板包括绿色像素区域、红色像素区域和蓝色像素区域，在所述绿色像素区域，所述显示基板还包括位于所述光吸收层远离所述有机发光层的一侧的反射吸收薄膜，所述反射吸收薄膜能够与所述第二透明电极薄膜之间形成微腔，且所述反射吸收薄膜的反射率小于第四阈值，对环境光的光吸收率大于第五阈值。
  4. 根据权利要求2所述的显示基板，其中，所述第二电极结构还包括位于所述显示基板出光侧的用于提高所述显示基板的出光效率的光辅助层。
  5. 根据权利要求1所述的显示基板，其中，位于所述显示基板非出光侧的第一电极结构的光吸收率大于第一阈值，从靠近所述有机发光层到远离所述有机发光层的方向上，所述第一电极结构依次包括：
    第一透明电极薄膜；
    位相差层，所述位相差层的厚度为可见光的半波长的奇数倍；
    反射薄膜，所述反射薄膜的光反射率大于第六阈值。
  6. 根据权利要求5所述的显示基板，其中，所述第一电极结构还包括：
    位于所述第一透明电极薄膜和所述位相差层之间的光吸收层，所述光吸收层的光反射率低于第二阈值且光吸收率小于第三阈值，所述光吸收层与所述位相差层之间界面上的反射光与透过所述位相差层被所述反射薄膜反射回 来的光在所述光吸收层发生干涉。
  7. 根据权利要求2或5所述的显示基板，其中，
    所述位相差层采用Alq 3、MoO 3、LiF或MgF 2制成。
  8. 根据权利要求2或6所述的显示基板，其中，
    所述光吸收层采用Alq 3掺杂Ag制成。
  9. 根据权利要求3所述的显示基板，其中，
    所述反射吸收薄膜采用Al、Cr或AgMg制成。
  10. 根据权利要求1所述的显示基板，其中，第一电极结构为阳极，第二电极结构为阴极，所述第一阈值为40％或45％。
  11. 根据权利要求2所述的显示基板，其中，第二阈值为30％，第三阈值为15％。
  12. 根据权利要求3所述的显示基板，其中，第四阈值为20％，第五阈值为1.5％。
  13. 根据权利要求3所述的显示基板，其中，反射吸收薄膜的反射率为2％-20％，光吸收率为1.5％-15％。
  14. 根据权利要求4所述的显示基板，其中，光辅助层采用ZnSe、LiF等无机或有机材料。
  15. 根据权利要求5所述的显示基板，其中，第六阈值为90％。
  16. 一种显示装置，包括如权利要求1-15中任一项所述的显示基板。
PCT/CN2018/081886 2017-06-28 2018-04-04 一种显示基板及显示装置 Ceased WO2019001069A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/328,326 US11251409B2 (en) 2017-06-28 2018-04-04 Display substrate and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710505815.9A CN107195797B (zh) 2017-06-28 2017-06-28 一种显示基板及显示装置
CN201710505815.9 2017-06-28

Publications (1)

Publication Number Publication Date
WO2019001069A1 true WO2019001069A1 (zh) 2019-01-03

Family

ID=59881479

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/081886 Ceased WO2019001069A1 (zh) 2017-06-28 2018-04-04 一种显示基板及显示装置

Country Status (3)

Country Link
US (1) US11251409B2 (zh)
CN (1) CN107195797B (zh)
WO (1) WO2019001069A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110940342A (zh) * 2019-12-09 2020-03-31 湖北信永辉电子科技有限公司 一种新型导航仪及其自清洁式触摸屏
US11253819B2 (en) 2020-05-14 2022-02-22 Saudi Arabian Oil Company Production of thin film composite hollow fiber membranes
US12116326B2 (en) 2021-11-22 2024-10-15 Saudi Arabian Oil Company Conversion of hydrogen sulfide and carbon dioxide into hydrocarbons using non-thermal plasma and a catalyst

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107195797B (zh) * 2017-06-28 2019-11-01 京东方科技集团股份有限公司 一种显示基板及显示装置
CN110911581B (zh) 2019-11-14 2021-05-07 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制作方法及电子设备
CN112635694A (zh) * 2021-01-18 2021-04-09 深圳市华星光电半导体显示技术有限公司 Oled显示面板

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1866573A (zh) * 2005-05-20 2006-11-22 Lg.菲利浦Lcd株式会社 具有吸光金属纳米颗粒层的显示器件
CN102714281A (zh) * 2009-11-05 2012-10-03 韩国科学技术院 黑色有机发光二极管器件
CN103915468A (zh) * 2012-12-31 2014-07-09 乐金显示有限公司 有机发光二极管显示器及其制造方法
CN105590948A (zh) * 2014-11-06 2016-05-18 三星显示有限公司 有机发光装置及其制造方法
CN107195797A (zh) * 2017-06-28 2017-09-22 京东方科技集团股份有限公司 一种显示基板及显示装置
CN107546334A (zh) * 2016-06-28 2018-01-05 三星显示有限公司 包括防反射层的显示装置
CN107799563A (zh) * 2016-08-31 2018-03-13 乐金显示有限公司 具有微腔结构的显示装置及用于形成显示装置的方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6411019B1 (en) * 1999-07-27 2002-06-25 Luxell Technologies Inc. Organic electroluminescent device
US6750609B2 (en) * 2001-08-22 2004-06-15 Xerox Corporation OLEDs having light absorbing electrode
CA2411683A1 (en) * 2002-11-13 2004-05-13 Luxell Technologies Inc. Oled with contrast enhancement features
CN1280925C (zh) 2003-01-17 2006-10-18 友达光电股份有限公司 降低外界光线反射的有机发光二极管及其制程
DE10393385T5 (de) 2003-06-13 2005-08-25 Fuji Electric Holdings Co., Ltd., Kawasaki Organische EL-Vorrichtung und organische EL-Tafel
KR100852115B1 (ko) 2007-03-07 2008-08-13 삼성에스디아이 주식회사 유기 발광 디스플레이 장치
KR101434361B1 (ko) * 2007-10-16 2014-08-26 삼성디스플레이 주식회사 백색 유기 전계 발광소자 및 이를 이용한 컬러 디스플레이장치
CN101540374A (zh) * 2009-04-22 2009-09-23 南京邮电大学 增加顶发射型有机发光二极管对比度的结构
KR101114253B1 (ko) * 2009-11-23 2012-03-05 국민대학교산학협력단 블랙 마이크로캐비티를 포함하는 유기발광다이오드
CN102034935B (zh) * 2010-09-27 2012-07-04 南京邮电大学 高对比度顶发光型有机发光二极管
CN102270750A (zh) * 2011-07-26 2011-12-07 昆山维信诺显示技术有限公司 有机电致发光器件、显示设备及制备方法
CN102969454A (zh) * 2012-12-06 2013-03-13 吉林大学 一种具有带通滤光膜的高对比度顶发射绿光有机电致发光器件
CN103474450A (zh) 2013-09-11 2013-12-25 京东方科技集团股份有限公司 一种显示面板及其制造方法、显示装置
CN105206758A (zh) * 2014-06-04 2015-12-30 群创光电股份有限公司 有机发光二极管显示器
US9680132B1 (en) * 2015-11-30 2017-06-13 Industrial Technology Research Institute Display device and optical film
CN106784388B (zh) * 2017-01-18 2018-08-10 云南大学 一种高对比度有机发光二极管及其设计方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1866573A (zh) * 2005-05-20 2006-11-22 Lg.菲利浦Lcd株式会社 具有吸光金属纳米颗粒层的显示器件
CN102714281A (zh) * 2009-11-05 2012-10-03 韩国科学技术院 黑色有机发光二极管器件
CN103915468A (zh) * 2012-12-31 2014-07-09 乐金显示有限公司 有机发光二极管显示器及其制造方法
CN105590948A (zh) * 2014-11-06 2016-05-18 三星显示有限公司 有机发光装置及其制造方法
CN107546334A (zh) * 2016-06-28 2018-01-05 三星显示有限公司 包括防反射层的显示装置
CN107799563A (zh) * 2016-08-31 2018-03-13 乐金显示有限公司 具有微腔结构的显示装置及用于形成显示装置的方法
CN107195797A (zh) * 2017-06-28 2017-09-22 京东方科技集团股份有限公司 一种显示基板及显示装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110940342A (zh) * 2019-12-09 2020-03-31 湖北信永辉电子科技有限公司 一种新型导航仪及其自清洁式触摸屏
US11253819B2 (en) 2020-05-14 2022-02-22 Saudi Arabian Oil Company Production of thin film composite hollow fiber membranes
US12116326B2 (en) 2021-11-22 2024-10-15 Saudi Arabian Oil Company Conversion of hydrogen sulfide and carbon dioxide into hydrocarbons using non-thermal plasma and a catalyst

Also Published As

Publication number Publication date
US20210296620A1 (en) 2021-09-23
CN107195797A (zh) 2017-09-22
CN107195797B (zh) 2019-11-01
US11251409B2 (en) 2022-02-15

Similar Documents

Publication Publication Date Title
WO2019001069A1 (zh) 一种显示基板及显示装置
KR101773087B1 (ko) 블랙 매트릭스 함유 ｎｄ 필름을 구비한 유기 발광 표시 장치
US10446798B2 (en) Top-emitting WOLED display device
CN103647026B (zh) 全彩化顶发射oled器件及其制备方法
TWI617023B (zh) 顯示裝置與光學膜
US20240049580A1 (en) Display panel and display device
CN100525565C (zh) 平板显示器及其制造方法
CN109817832A (zh) 一种oled显示基板及其制备方法、显示装置
CN107134536B (zh) 有机发光二极管及其制造方法、显示面板、显示装置
US10038159B2 (en) Organic electroluminescent device structure and manufacturing for the same
CN105140247A (zh) 有机发光二极管阵列基板、制造方法及使用其的显示器
CN113437241A (zh) 显示基板、显示装置及显示基板的制备方法
CN108598279B (zh) Oled显示基板及其制作方法、显示装置
CN110265441A (zh) 一种显示面板及其显示装置
US11631827B2 (en) Electroluminescent display panel comprising plurality of pixels forming plurality of standing waves and manufacturing method thereof
CN104185331B (zh) 发光元件、显示设备和照明设备
US11251407B2 (en) Display panel having an optical coupling layer and manufacturing method thereof electroluminescent device and display device
CN114068662A (zh) 显示面板及显示装置
CN111477762A (zh) 显示面板及其制备方法、电致发光显示装置
KR102115001B1 (ko) 유기전계발광 표시장치 및 그 제조 방법
US20200168833A1 (en) Organic light-emitting device and electrode thereof
WO2017173692A1 (zh) Oled显示面板及其制备方法
CN110890476B (zh) 显示面板、显示装置
CN206610812U (zh) 有机发光二极管显示装置
KR102310005B1 (ko) 광학 필름 및 이를 구비하는 유기전계발광 표시장치

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18824233

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18824233

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 28-05-2020)

122 Ep: pct application non-entry in european phase

Ref document number: 18824233

Country of ref document: EP

Kind code of ref document: A1