WO2018212625A1 - Dispositif à semi-conducteur et procédé de fabrication de dispositif à semi-conducteur - Google Patents

Dispositif à semi-conducteur et procédé de fabrication de dispositif à semi-conducteur Download PDF

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WO2018212625A1
WO2018212625A1 PCT/KR2018/005734 KR2018005734W WO2018212625A1 WO 2018212625 A1 WO2018212625 A1 WO 2018212625A1 KR 2018005734 W KR2018005734 W KR 2018005734W WO 2018212625 A1 WO2018212625 A1 WO 2018212625A1
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layer
electrode
conductive
semiconductor
disposed
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PCT/KR2018/005734
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English (en)
Korean (ko)
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성연준
김민성
김현주
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엘지이노텍 주식회사
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Priority claimed from KR1020170061751A external-priority patent/KR102402917B1/ko
Priority claimed from KR1020170063490A external-priority patent/KR102388795B1/ko
Priority claimed from KR1020170078844A external-priority patent/KR102299745B1/ko
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Publication of WO2018212625A1 publication Critical patent/WO2018212625A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • Embodiments relate to a semiconductor device and a method for manufacturing the semiconductor device including the same.
  • a semiconductor device including a compound such as GaN, AlGaN, etc. has many advantages, such as having a wide and easy-to-adjust band gap energy, and can be used in various ways as a light emitting device, a light receiving device, and various diodes.
  • light emitting devices such as light emitting diodes and laser diodes using semiconductors of Group 3-5 or Group 2-6 compound semiconductors have been developed through the development of thin film growth technology and device materials.
  • Various colors such as blue and ultraviolet light can be realized, and efficient white light can be realized by using fluorescent materials or combining colors.Low power consumption, semi-permanent lifespan, and fast response speed compared to conventional light sources such as fluorescent and incandescent lamps can be realized. It has the advantages of safety, environmental friendliness.
  • a light-receiving device such as a photodetector or a solar cell
  • a group 3-5 or 2-6 compound semiconductor material of a semiconductor the development of device materials absorbs light in various wavelength ranges to generate a photocurrent.
  • light in various wavelengths can be used from gamma rays to radio wavelengths. It also has the advantages of fast response speed, safety, environmental friendliness and easy control of device materials, making it easy to use in power control or microwave circuits or communication modules.
  • the semiconductor device may replace a light emitting diode backlight, a fluorescent lamp, or an incandescent bulb, which replaces a cold cathode tube (CCFL) constituting a backlight module of an optical communication means, a backlight of a liquid crystal display (LCD) display device.
  • CCFL cold cathode tube
  • LCD liquid crystal display
  • the light emitting device that emits light in the ultraviolet wavelength region can be used for curing, medical treatment, and sterilization by curing or sterilizing.
  • the ultraviolet light emitting device has a problem that it is difficult to implement a vertical type, and there is a problem that the light extraction efficiency is relatively low.
  • the embodiment provides a vertical ultraviolet light emitting device.
  • the embodiment provides a method of manufacturing an ultraviolet light emitting device having an easy LLO process.
  • the embodiment provides a semiconductor device having improved light extraction efficiency.
  • the embodiment provides a semiconductor device having excellent current spreading efficiency.
  • the embodiment provides a semiconductor device having a lower operating voltage.
  • the semiconductor device includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer.
  • a semiconductor structure including a plurality of recesses penetrating through the second conductivity type semiconductor layer and the active layer to a portion of the first conductivity type semiconductor layer;
  • a first electrode disposed inside the plurality of recesses and electrically connected to the first conductive semiconductor layer;
  • a second electrode electrically connected to the second conductive semiconductor layer;
  • a light absorption layer disposed at an edge of the semiconductor structure, wherein the light absorption layer is thicker than the second electrode.
  • the light absorption layer and the second electrode may include ITO.
  • the width of the light absorption layer may be shorter than the shortest distance from the outermost side of the first surface to the second electrode.
  • the light absorption layer may be disposed between the second conductivity type semiconductor layer and the first insulating layer.
  • the active layer may emit light in the ultraviolet wavelength range.
  • a method of manufacturing a semiconductor device includes forming a semiconductor structure by sequentially forming a main absorption layer, a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate; Forming a light absorption layer on the channel layer, wherein the semiconductor structure is disposed between the plurality of chip regions; Forming an electrode on the plurality of chip regions and the channel layer; And separating the substrate by irradiating a laser to the substrate, wherein the main absorption layer and the light absorption layer absorb the laser.
  • the method may further include separating the plurality of chip regions by cutting the channel layer after separating the substrate, wherein the separated chip regions may include a portion of the light absorption layer.
  • the channel layer may be etched to form a recess and a protrusion protruding from the bottom surface of the recess, and the protrusion may be disposed to surround the plurality of chip regions.
  • the yield of the vertical light emitting device can be improved.
  • the current dispersion efficiency is excellent, the light output can be improved.
  • the operating voltage can be lowered.
  • FIG. 1 is a conceptual diagram of a semiconductor device according to a first embodiment of the present invention
  • FIG. 2A is an enlarged view of a portion A of FIG. 1;
  • 2B is a plan view of a semiconductor device according to a first embodiment of the present disclosure
  • 4A to 4C are views illustrating a state in which a semiconductor device is damaged when a substrate is removed.
  • 5A to 5D are views for explaining a method of manufacturing a semiconductor device according to the first embodiment of the present invention.
  • FIG. 6 is a view illustrating a state in which a channel is formed between a plurality of semiconductor devices by mesa etching a semiconductor structure, and a light absorption layer is formed;
  • FIG. 7 is a view showing a state of removing a substrate from the semiconductor structure
  • FIG. 8 is a modification of FIG. 6,
  • FIG. 9 is a view illustrating a state in which a substrate is removed from a semiconductor structure in the structure of FIG. 8;
  • FIG. 10 is a conceptual diagram of a semiconductor device according to a second embodiment of the present disclosure.
  • 11A and 11B are views for explaining a configuration in which light output is improved according to a change in the number of recesses.
  • FIG. 12 is a plan view of a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 13 is a cross-sectional view taken along the line A-A of FIG. 12;
  • 15A is a view illustrating a state in which the third electrode absorbs ultraviolet light
  • 15B is a graph measuring reflectance of light of 280 nm wavelength band of various reflective layers
  • 16 is a view showing a state in which a recess is surrounded by a unit electrode
  • FIG. 17 is an enlarged view of a portion A of FIG. 12;
  • FIG. 20 is a plan view of a semiconductor device according to a third embodiment of the present disclosure.
  • FIG. 21 is a sectional view along the B-B direction in FIG. 20,
  • FIG. 22 is a cross-sectional view of a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 23 is an enlarged view of a portion B of FIG. 22;
  • FIG. 24 is a conceptual diagram of a semiconductor device according to a fifth embodiment of the present disclosure.
  • 25A is an enlarged view of portion A of FIG. 24;
  • 25B is an enlarged view of a portion of FIG. 25A;
  • FIG. 26 is a graph showing an aluminum composition in a thickness direction of a semiconductor device according to a fifth exemplary embodiment of the present invention.
  • 27A and 27B are views for explaining a configuration in which light output is improved according to a change in the number of recesses.
  • 29 is a plan view of a semiconductor device according to a sixth embodiment of the present invention.
  • FIG. 30 is a plan view of a semiconductor device according to a seventh embodiment of the present disclosure.
  • FIG. 31 is a plan view of a semiconductor device according to an eighth embodiment of the present disclosure.
  • FIG. 33 is a conceptual diagram of a semiconductor device according to a ninth embodiment of the present invention.
  • FIG. 34 is a top view of FIG. 33;
  • 35 is a conceptual diagram of a semiconductor device package according to an embodiment of the present disclosure.
  • 36 is a plan view of a semiconductor device package according to an embodiment of the present disclosure.
  • FIG. 37 is a modification of FIG. 36.
  • FIG. 1 is a conceptual diagram of a semiconductor device according to a first embodiment of the present invention
  • FIG. 2A is an enlarged view of a portion A of FIG. 1
  • FIG. 2B is a plan view of the semiconductor device according to the first embodiment of the present invention.
  • a semiconductor device in accordance with a first embodiment of the present invention includes a semiconductor structure 120 including a first conductive semiconductor layer 124, an active layer 126, and a second conductive semiconductor layer 127. ), A first electrode 142 electrically connected to the first conductive semiconductor layer 124, and a second electrode 246 electrically connected to the second conductive semiconductor layer 127.
  • the semiconductor structure 120 may output light in an ultraviolet wavelength band.
  • the semiconductor structure 120 may output light in the near ultraviolet wavelength band (UV-A), may output light in the far ultraviolet wavelength band (UV-B), or light in the deep ultraviolet wavelength band (UV-A).
  • C) can be output.
  • the wavelength range may be determined by the composition ratio of Al of the semiconductor structure 120.
  • the light (UV-A) in the near ultraviolet wavelength band may have a wavelength in the range of 320 nm to 420 nm
  • the light in the far ultraviolet wavelength band (UV-B) may have a wavelength in the range of 280 nm to 320 nm
  • deep ultraviolet light Light in the wavelength band (UV-C) may have a wavelength in the range of 100nm to 280nm.
  • the semiconductor structure 120 is disposed between the first conductive semiconductor layer 124, the second conductive semiconductor layer 127, and the first conductive semiconductor layer 124 and the second conductive semiconductor layer 127.
  • An active layer 126 is disposed between the first conductive semiconductor layer 124, the second conductive semiconductor layer 127, and the first conductive semiconductor layer 124 and the second conductive semiconductor layer 127.
  • the first conductive semiconductor layer 124 may be formed of a compound semiconductor such as a group III-V group or a group II-VI, and may be doped with a first dopant.
  • the first conductive semiconductor layer 124 is a semiconductor material having a composition formula of In x1 Al y1 Ga 1 -x1 -y1 N (0 ⁇ x1 ⁇ 1, 0 ⁇ y1 ⁇ 1, 0 ⁇ x1 + y1 ⁇ 1), for example For example, it may be selected from GaN, AlGaN, InGaN, InAlGaN and the like.
  • the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductive semiconductor layer 124 doped with the first dopant may be an n-type semiconductor layer.
  • the active layer 126 is disposed between the first conductive semiconductor layer 124 and the second conductive semiconductor layer 127.
  • the active layer 126 is a layer where electrons (or holes) injected through the first conductive semiconductor layer 124 meet holes (or electrons) injected through the second conductive semiconductor layer 127.
  • the active layer 126 transitions to a low energy level as electrons and holes recombine, and may generate light having an ultraviolet wavelength.
  • the active layer 126 may have any one of a single well structure, a multi well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum line structure, and the active layer 126. ) Is not limited thereto.
  • the second conductive semiconductor layer 127 may be formed of a compound semiconductor such as a III-V group or a II-VI group, and a second dopant may be doped into the second conductive semiconductor layer 127.
  • a second conductive semiconductor layer 127 is a semiconductor material having a compositional formula of In x5 Al y2 Ga 1 -x5- y2 N (0 ⁇ x5 ⁇ 1, 0 ⁇ y2 ⁇ 1, 0 ⁇ x5 + y2 ⁇ 1) or AlInN , AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of a material selected from.
  • the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba
  • the second conductive semiconductor layer 127 doped with the second dopant may be a p-type semiconductor layer.
  • the semiconductor structure 120 includes a plurality of recesses 128.
  • the plurality of recesses 128 may pass through the active layer 126 on the first surface 127G of the second conductivity type semiconductor layer 127 and may be disposed up to a portion of the first conductivity type semiconductor layer 124.
  • the first electrode 142 may be disposed in the recess 128 to be electrically connected to the first conductive semiconductor layer 124.
  • the first conductive layer 165 may be disposed in the plurality of recesses 128 to electrically connect the plurality of first electrodes 142.
  • the first insulating layer 131 may be disposed in the recess 128 to electrically insulate the first conductive layer 165 from the second conductive semiconductor layer 127 and the active layer 126.
  • the aluminum structure is increased in the semiconductor structure 120, current dispersing characteristics may be reduced in the semiconductor structure 120.
  • the amount of light emitted to the side of the active layer is increased compared to the GaN-based blue light emitting device (TM mode). This TM mode can occur mainly in ultraviolet semiconductor devices.
  • the ultraviolet semiconductor device may have poor current dissipation characteristics compared to the blue GaN semiconductor device. Accordingly, in the ultraviolet semiconductor device, it is necessary to dispose more first electrodes 142 than the blue GaN semiconductor device.
  • the second electrode 246 may be disposed on the first surface 127G of the second conductive semiconductor layer 127.
  • the second electrode 246 may include a transmissive electrode having relatively low ultraviolet light absorption.
  • the first electrode 142 and the second electrode 246 may be ohmic electrodes.
  • the first electrode 142 and the second electrode 246 are indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), and indium gallium zinc oxide (IGZO).
  • the light absorption layer 13 may be disposed at the outermost edge of the semiconductor device.
  • the light absorption layer 13 may absorb a laser beam irradiated to remove the substrate on which the semiconductor structure is grown. In some cases, the light absorption layer 13 may absorb light emitted from the active layer 126. Therefore, it may be desirable to minimize the area of the light absorption layer 13.
  • the light absorption layer 13 may be disposed between the second conductive semiconductor layer 127 and the first insulating layer 131.
  • the horizontal direction (X-axis direction) width L1 of the light absorption layer 13 may be smaller than the shortest distance L2 from the outermost side of the semiconductor device to the second electrode 246.
  • the light absorbing layer 13 may absorb the ultraviolet light generated by the active layer 126, the light extraction efficiency may decrease when the width of the light absorbing layer 13 increases. Therefore, the width of the light absorbing layer may be formed to be short so as not to overlap the semiconductor structure 120 in the thickness direction (Y direction). That is, the light absorption layer 13 may have a first width L11. However, the present invention is not limited thereto, and the light absorption layer 13 may further extend L12 into the inside of the semiconductor device to overlap the semiconductor structure 120 in the thickness direction. The extended portion L12 of the light absorption layer 13 may be formed by manufacturing tolerances or process margins.
  • the width L1 of the light absorption layer 13 may be 1 ⁇ m to 20 ⁇ m at the outermost side of the semiconductor device, but is not limited thereto.
  • the second electrode 246 may be advantageously formed thin so as not to absorb light generated by the active layer 126.
  • the thickness of the second electrode 246 may be 1 nm to 20 nm.
  • the light absorbing layer 13 is advantageously thick so as to absorb the growth substrate removal laser as much as possible.
  • the thickness of the light absorption layer 13 may be 15 nm to 100 nm.
  • the thickness d2 of the light absorption layer 13 may be thicker than the thickness d1 of the second electrode 246.
  • the light absorption layer 13 and the second electrode 246 may be conductive oxide electrodes such as ITO, but are not limited thereto.
  • the light absorption layer 13 may be applied without limitation as long as the energy band gap is smaller than the band gap of the laser for LLO.
  • the light absorption layer 13 and the second electrode 246 may be disposed on the bottom surface of the semiconductor structure 120. That is, the light absorption layer 13 and the second electrode 246 may be disposed on the same plane.
  • the light absorbing layer 13 and the second electrode 246 may be disposed on the bottom surface 127G of the second conductive semiconductor layer 127 of the semiconductor structure 120, but are not limited thereto.
  • the light absorption layer 13 may be disposed between the passivation layer 180 and the first insulating layer 131, and the outer end may be exposed to the outside.
  • the light absorption layer 13 may be disposed on the four side surfaces 13a, 13b, 13c, and 13d along the edge of the semiconductor device. That is, the light absorption layer 13 may be continuously disposed along the side surface of the semiconductor structure 120.
  • the present invention is not limited thereto, and the light absorbing layer 13 may include only the first light absorbing layer 13a disposed on the first side and the second light absorbing layer 13b disposed on the second side. That is, the light absorption layer 13 may be selectively disposed only on the required side.
  • the second conductive layer 150 may be electrically connected to the plurality of second electrodes 246.
  • the second conductive layer 150 may include a material having good adhesion to the first insulating layer 131.
  • the second conductive layer 150 may be made of at least one material selected from the group consisting of materials such as Cr, Al, Ti, Ni, Au, and alloys thereof, and may be formed of a single layer or a plurality of layers. Can be done.
  • the second electrode pad 166 may be disposed in one corner area of the semiconductor device.
  • the second electrode pad 166 may have a recessed portion and a convex portion at an upper surface thereof because the center portion is recessed. Wires (not shown) may be bonded to the recesses of the upper surface. Therefore, the adhesive area is widened, and the second electrode pad 166 and the wire may be more firmly bonded.
  • the second electrode pad 166 may function to reflect light, the closer the second electrode pad 166 is to the semiconductor structure 120, the light extraction efficiency may be improved.
  • the second electrode pad 166 may be higher than the active layer 126. Accordingly, the second electrode pad 166 may reflect light emitted in the horizontal direction of the device from the active layer 126 to the top to improve light extraction efficiency and to control the direction angle.
  • the second electrode pad 166 may be electrically connected to the second conductive layer 150 and the second electrode 246 through the first insulating layer 131.
  • the first insulating layer 131 may electrically insulate the first electrode 142 from the active layer 126 and the second conductive semiconductor layer 127. In addition, the first insulating layer 131 may cover the light absorption layer 13.
  • the first insulating layer 131 is SiO 2, SixOy, Si 3 N 4, Si x N y, SiO x N y, Al 2 O 3, TiO 2, can be at least one is selected and formed from the group consisting of AlN, etc. However, it is not limited thereto.
  • the first insulating layer 131 may be formed in a single layer or multiple layers.
  • the first insulating layer 131 may be a distributed Bragg reflector (DBR) having a multilayer structure including a Si oxide or a Ti compound.
  • DBR distributed Bragg reflector
  • the present invention is not limited thereto, and the first insulating layer 131 may include various reflective structures.
  • the second insulating layer 132 may electrically insulate the second conductive layer 150 from the first conductive layer 165.
  • the first conductive layer 165 may be electrically connected to the first electrode 142 through the second insulating layer 132.
  • the first conductive layer 165 and the bonding layer 160 may be disposed along the shape of the lower surface of the semiconductor structure 120 and the recess 128.
  • the first conductive layer 165 may be made of a material having excellent reflectance.
  • the first conductive layer 165 may include aluminum. When the first conductive layer 165 includes aluminum, the light emitting efficiency may be improved by reflecting light emitted from the active layer 126 upward.
  • the bonding layer 160 may comprise a conductive material.
  • the bonding layer 160 may include a material selected from the group consisting of gold, tin, indium, aluminum, silicon, silver, nickel, and copper, or an alloy thereof.
  • the bonding layer 160 may bond the substrate 170 and the semiconductor structure 120 during the LLO process.
  • the substrate 170 may be made of a conductive material.
  • the substrate 170 may include a metal or a semiconductor material.
  • the substrate 170 may be a metal having excellent electrical conductivity and / or thermal conductivity. In this case, heat generated during the operation of the semiconductor device may be quickly released to the outside.
  • the substrate 170 may include a material selected from the group consisting of silicon, molybdenum, silicon, tungsten, copper, and aluminum, or an alloy thereof.
  • the substrate 170 may electrically connect the first conductivity type semiconductor layer 124 and the external electrode.
  • the passivation layer 180 may be formed on the top and side surfaces of the semiconductor structure 120.
  • the passivation layer 180 may contact the first insulating layer 131 in a region adjacent to the second electrode 246 or under the second electrode 246.
  • Unevenness may be formed on the upper surface of the semiconductor structure 120. Such unevenness may improve the extraction efficiency of the light emitted from the semiconductor structure 120.
  • the unevenness may have a different average height according to the ultraviolet wavelength, and in the case of UV-C, the light extraction efficiency may be improved when the UV-C has a height of about 300 nm to 800 nm and an average of about 500 nm to 600 nm.
  • Figures 4a to 4c is a view showing a state in which the semiconductor device is damaged when removing the substrate.
  • a semiconductor structure 120 may be formed on a substrate 1 and divided into a plurality of chip regions 10 and a channel layer 12. Thereafter, a plurality of electrode layers M1 may be formed on the semiconductor structure 120 and the substrate 1 may be removed.
  • the laser can be irradiated to remove the substrate 1.
  • a main absorption layer P1 may be formed to absorb the laser.
  • the energy band gap of the laser is large, so that the laser may pass through the semiconductor structure 120 and damage the channel layer 12.
  • the electrode layer M1 may be a first conductive layer or a bonding layer, but is not limited thereto.
  • the chip region 10 since the chip region 10 includes a plurality of layers (eg, second electrodes) capable of partially absorbing the laser, the chip region 10 may be relatively less damaged than the channel layer 12.
  • the electrode layer M1 formed in the channel layer 12 is connected to the electrode layer M1 of the chip region 10. Therefore, when a peeling phenomenon occurs in the electrode layer M1 of the channel layer 12, the chip region 10 may be damaged. 4A to 4C, it can be seen that the channel layer 12 is damaged and thus the chip region 10 is damaged.
  • FIG. 5A to 5D illustrate a method of manufacturing a semiconductor device in accordance with a first embodiment of the present invention
  • FIG. 6 illustrates a method for forming a channel between a plurality of semiconductor devices by mesa etching a semiconductor structure, and a light absorption layer.
  • FIG. 7 is a view illustrating a state in which a substrate is formed, and FIG. 7 illustrates a state in which a substrate is removed from a semiconductor structure.
  • the main absorption layer P1, the first conductive semiconductor layer 124, the active layer 126, and the second conductive semiconductor layer 127 are sequentially formed on the substrate 1.
  • the main absorbing layer P1 the first conductive semiconductor layer 124, the active layer 126, and the second conductive semiconductor layer 127 are formed on the substrate 1.
  • the semiconductor structure 120 may be formed.
  • the substrate 1 may be formed of a material selected from sapphire (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto.
  • the main absorption layer P1 may be made of a material having a low Al composition to absorb the laser.
  • the main absorption layer P1 may be an AlGaN single layer or a superlattice structure.
  • the light absorption layer 13 may be formed on the channel layer 12.
  • the light absorbing layer 13 may include a material having an energy band gap sufficient to absorb the LLO laser.
  • the wavelength band of the LLO laser is not particularly limited.
  • the light absorbing layer 13 may be ITO, but is not limited thereto.
  • the light absorption layer 13 may have the same composition as the second electrode.
  • the forming of the electrode may include a first electrode 142, a second electrode 246, a first conductive layer 165, and a second conductive layer 150 in the plurality of chip regions 10 and the channel layer 12.
  • the conductive substrate 170 may be sequentially formed.
  • the separating of the substrate 1 may be performed by irradiating a laser to separate the substrate 1 from the semiconductor structure 120.
  • the main absorption layer P1 may be separated by absorbing a laser.
  • the light absorption layer 13 is additionally disposed in the channel layer 12, most of the laser beams passing through the main absorption layer P1 may be absorbed by the light absorption layer 13. Therefore, the electrode layers M1, 165, and 150 formed on the channel layer 12 do not absorb the laser, thereby improving the peeling phenomenon.
  • a plurality of chip regions 10 may be separated by mesa etching one surface of the semiconductor structure 120 from which the substrate 1 is removed.
  • a part of the light absorption layer 13 may be disposed inside the chip region 10.
  • the present invention is not limited thereto, and the semiconductor structure 120 may be etched such that the light absorption layer 13 does not overlap in the thickness direction.
  • the semiconductor structures 120 may be separated from each other to be separated into a plurality of semiconductor devices, and the passivation layer 180 may be formed on the semiconductor structures 120 and the light absorption layer 13. .
  • FIG. 8 is a modification of FIG. 6, and FIG. 9 is a view illustrating a state in which a substrate is removed from a semiconductor structure in the structure of FIG. 8.
  • the recess 11a and the protrusion 11b protruding from the bottom surface of the recess 11a may be included.
  • the protrusion 11b may be disposed to surround the plurality of chip regions 10. In this case, even when the electrode layer M1 of the channel layer 12 absorbs the laser and is peeled off, propagation to the chip region 10 by the protrusion 11b can be prevented. That is, the protrusion 11b may serve as a barrier to prevent the propagation of peeling.
  • the present invention is not limited thereto, and the light absorbing layer may be further formed thereon after the recess 11a and the protrusion 11b are formed.
  • FIG. 10 is a conceptual view illustrating a semiconductor device in accordance with a second embodiment of the present invention
  • FIGS. 11A and 11B are diagrams for describing a configuration in which light output is improved according to a change in the number of recesses.
  • a semiconductor device in accordance with a second embodiment of the present invention may include a semiconductor structure 120 including a first conductive semiconductor layer 124, an active layer 126, and a second conductive semiconductor layer 127. ), A first electrode 142 electrically connected to the first conductive semiconductor layer 124, and a second electrode 246 electrically connected to the second conductive semiconductor layer 127.
  • the semiconductor structure 120 is disposed between the first conductive semiconductor layer 124, the second conductive semiconductor layer 127, and the first conductive semiconductor layer 124 and the second conductive semiconductor layer 127.
  • An active layer 126 In this configuration, the content described in FIG. 1 may be applied as it is.
  • the semiconductor structure 120 includes a plurality of recesses 128.
  • the plurality of recesses 128 may pass through the active layer 126 on the first surface 127G of the second conductivity type semiconductor layer 127 and may be disposed up to a portion of the first conductivity type semiconductor layer 124.
  • the first electrode 142 may be disposed in the recess 128 to be electrically connected to the first conductive semiconductor layer 124.
  • the first conductive layer 165 may be disposed in the plurality of recesses 128 to electrically connect the plurality of first electrodes 142.
  • the first insulating layer 131 may be disposed in the recess 128 to electrically insulate the first conductive layer 165 from the second conductive semiconductor layer 127 and the active layer 126.
  • the first insulating layer 131 may include a first opening 21.
  • the first electrode 142 may be disposed in the first opening 21 of the first insulating layer 131 to be electrically connected to the first conductive semiconductor layer 124.
  • the first electrode 142 may be spaced apart from the side surface of the recess 128 to secure the yield and / or reliability of the semiconductor device.
  • the first insulating layer 131 may be disposed between the first electrode 142 and the side surface of the recess 128 in the recess 128 to ensure reliability of the semiconductor device.
  • the recess 128 is preferably disposed to have a diameter of 70 ⁇ m or less.
  • the diameter of the recess 128 may be a maximum diameter formed on the first surface 127G of the second conductivity-type semiconductor layer 127.
  • the GaN-based semiconductor structure 120 when the GaN-based semiconductor structure 120 emits ultraviolet rays, the GaN-based semiconductor structure 120 may include aluminum. When the aluminum composition of the semiconductor structure 120 is increased, current dispersing characteristics of the semiconductor structure 120 decrease. Can be. In addition, when the active layer 126 emits UV light including Al, the amount of light emitted to the side of the active layer 126 is increased compared to the GaN-based blue light emitting device (TM mode). This TM mode can occur mainly in ultraviolet semiconductor devices.
  • TM mode GaN-based blue light emitting device
  • Ultraviolet semiconductor devices have poor current dissipation characteristics compared to blue GaN-based semiconductor devices. Accordingly, in the ultraviolet semiconductor device, it is necessary to dispose relatively many first electrodes 142 as compared to the blue GaN-based semiconductor device.
  • the effective emission area P2 may be defined as an area up to a boundary point having a current density of 40% or less based on the current density at the center of the first electrode 142 having the highest current density.
  • the effective light emitting region P2 may be adjusted according to the level of the injection current and the composition of Al within a range of 40 ⁇ m from the center of the recess 128.
  • the low current density region P3 may have a low current density and may emit less light than the effective light emitting region P2. Accordingly, the light output may be improved by further disposing the first electrode 142 in the low current density region P3 having a low current density or by using a reflective structure.
  • a GaN-based semiconductor device emitting blue light has excellent current dispersing characteristics, and thus, it is preferable to minimize the area of the recess 128 and the first electrode 142. This is because the area of the active layer 126 decreases as the area of the recess 128 and the first electrode 142 increases.
  • the composition of aluminum is high and current dispersal characteristics are relatively low, even if the area of the active layer 126 is sacrificed, the area and / or the number of the first electrodes 142 are increased so that the low current density region P3 is increased. It may be desirable to reduce or reduce the number of reflection structures in the low current density region P3.
  • the recesses 128 when the number of the recesses 128 is increased to 48, the recesses 128 may be arranged in a zigzag without being disposed in a straight line in the horizontal and vertical directions. In this case, since the area of the low current density region P3 can be narrowed, most of the active layer 126 can participate in light emission.
  • the number of the recesses 128 is 70 to 110, the current may be more efficiently distributed, thereby lowering the operating voltage and improving the light output.
  • the number of the recesses 128 is preferably 70 or more in order to secure electrical and optical properties, and in order to secure the optical properties by securing the volume of the active layer 126. It is preferable to arrange at 110 or less.
  • the second electrode 246 may be disposed on the first surface 127G of the second conductive semiconductor layer 127.
  • the second electrode 246 may include a transmissive electrode having relatively low ultraviolet light absorption.
  • the first electrode 142 and the second electrode 246 may be ohmic electrodes.
  • the first electrode 142 and the second electrode 246 are indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), and indium gallium zinc oxide (IGZO).
  • the third electrode 247 may be disposed below the second electrode 246.
  • the third electrode 247 may be disposed between the second conductive layer 150 and the second electrode 246 to improve current injection efficiency.
  • the third electrode 247 may be a non-translucent electrode including a metal.
  • the third electrode 247 when the third electrode 247 is made of a material having high conductivity, the third electrode 247 may be a light transmissive electrode.
  • the third electrode 247 may be indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAO), indium gallium zinc oxide (IGZO), or indium gallium tin (IGTO).
  • the reflective layer 248 may cover a portion of the second electrode 246 and a portion of the third electrode 247. Accordingly, the reflective layer 248 may reflect light emitted from the active layer 126 to improve light extraction efficiency.
  • the reflective layer 248 may include an insulating material.
  • the reflective layer 248 may be configured of a first reflective layer having a first refractive index and a second reflective layer having a second refractive index.
  • the reflective layer 248 may be a distributed bragg reflector (DBR), but is not limited thereto.
  • the reflective layer 248 may have a structure in which a high refractive index layer and a low refractive index layer are repeatedly stacked.
  • the reflective layer 248 may be an insulating material such as HfOx, SixOy, SixNy, SiON, TiOx, or the like, and may include at least one or more thereof.
  • the second conductive layer 150 may be electrically connected to the plurality of third electrodes 247 through holes disposed in the reflective layer 248.
  • the second conductive layer 150 may include a material having good adhesion to the first insulating layer 131.
  • the second conductive layer 150 may be made of at least one material selected from the group consisting of materials such as Cr, Al, Ti, Ni, Au, and alloys thereof, and may be formed of a single layer or a plurality of layers. Can be done.
  • the second conductive layer 150 may contact the first insulating layer 131 in some regions.
  • a material having a good adhesion between the second conductive layer 150 and the first insulating layer 131 may be disposed during operation of the semiconductor device. The problem of deterioration of reliability due to heat can be improved.
  • the first insulating layer 131 may electrically insulate the first electrode 142 from the active layer 126 and the second conductive semiconductor layer 127. In addition, the first insulating layer 131 may electrically insulate the second conductive layer 150 from the first conductive layer 165.
  • the first insulating layer 131 may include a plurality of first openings 21 penetrating the recess 128, and the first electrode 142 may be disposed in the first opening 21.
  • the first insulating layer 131 may include a second opening 22 for electrically connecting the second electrode pad 166 and the second conductive layer 150. Widths of the first opening 21 and the second opening 22 may be different from each other.
  • the second electrode pad 166 may be electrically connected to the second conductive layer 150 and the second electrode 246 through the second opening 22 of the first insulating layer 131.
  • the width of the second opening 22 of the first insulating layer 131 may be 60% or more of the entire width of the second electrode pad 166 in order to secure electrical characteristics of the semiconductor device, and may emit light with respect to the area of the semiconductor device. It may be less than 95% to ensure efficiency.
  • the width of the second opening 22 is preferably 40 ⁇ m or more in order to secure electrical characteristics of the semiconductor device. Since the second electrode pad 166 is not a part contributing to light emission in the area of the upper surface of the semiconductor device, the second electrode pad 166 is preferably disposed so as to secure an area for a wire process and secure electrical characteristics of the semiconductor device.
  • the width of the second electrode pad 166 for the wire process is preferably disposed to be 40 ⁇ m or more in order to secure the electrical characteristics by the current injection of the semiconductor device. In addition, it is preferable to arrange so that the area of the non-light emitting area between the area of the semiconductor element and the area of the light emitting structure is minimized to 120 m or less.
  • At least one second electrode pad 166 may be disposed, and a width of the second electrode pad 166 may mean a width of a single second electrode pad 166.
  • the width of the second opening 22 is greater than 120 ⁇ m, the second conductive layer 150 may be exposed to the outside.
  • the width of the second opening 22 is preferably disposed to be 120 ⁇ m or less.
  • the second insulating layer 132 may electrically insulate the second conductive layer 150 from the first conductive layer 165.
  • the first conductive layer 165 may be electrically connected to the first electrode 142 through the second insulating layer 132.
  • the first conductive layer 165 and the bonding layer 160 may be disposed along the shape of the lower surface of the semiconductor structure 120 and the recess 128.
  • the first conductive layer 165 may be made of a material having excellent reflectance.
  • the first conductive layer 165 may include aluminum. When the first conductive layer 165 includes aluminum, the light emitting efficiency may be improved by reflecting light emitted from the active layer 126 upward.
  • the bonding layer 160 may comprise a conductive material.
  • the bonding layer 160 may include a material selected from the group consisting of gold, tin, indium, aluminum, silicon, silver, nickel, and copper, or an alloy thereof.
  • the bonding layer 160 may bond the substrate 170 and the semiconductor structure 120 during the LLO process.
  • the substrate 170 may be made of a conductive material.
  • the substrate 170 may include a metal or a semiconductor material.
  • the substrate 170 may be a metal having excellent electrical conductivity and / or thermal conductivity. In this case, heat generated during the operation of the semiconductor device may be quickly released to the outside.
  • the substrate 170 may include a material selected from the group consisting of silicon, molybdenum, silicon, tungsten, copper, and aluminum, or an alloy thereof.
  • the substrate 170 may electrically connect the first conductivity type semiconductor layer 124 and the external electrode.
  • the passivation layer 180 may be formed on the top and side surfaces of the semiconductor structure 120.
  • the passivation layer 180 may contact the first insulating layer 131 in a region adjacent to the second electrode 246 or under the second electrode 246.
  • Unevenness may be formed on the upper surface of the semiconductor structure 120. Such unevenness may improve the extraction efficiency of the light emitted from the semiconductor structure 120.
  • the unevenness may have a different average height according to the ultraviolet wavelength, and in the case of UV-C, the light extraction efficiency may be improved when the UV-C has a height of about 300 nm to 800 nm and an average of about 500 nm to 600 nm.
  • FIG. 12 is a plan view of a semiconductor device according to a second exemplary embodiment of the present invention
  • FIG. 13 is a cross-sectional view taken along line AA of FIG. 12
  • FIG. 14 is a cross-sectional view of a third electrode of the present invention
  • FIG. 15B is a graph illustrating reflectance of light with respect to light at 280 nm wavelength of various reflective layers.
  • the third electrode 247 may be disposed between adjacent recesses 128 in a plane.
  • the third electrode 247 may include a plurality of holes S1, and the plurality of recesses 128 may be disposed in the plurality of holes S1, respectively.
  • the plurality of holes S1 may have a polygonal shape or a circle shape such as a triangle, a rectangle, and a pentagon.
  • the present invention is not limited thereto, and the plurality of holes may have various shapes.
  • the first insulating layer 131 includes an extension part 131a extending to the first surface 127G of the second conductivity-type semiconductor layer 127, and the second electrode 246 may be formed of a second electrode 246.
  • the second conductive semiconductor layer 127 may be disposed on the first surface 127G.
  • the separation region W2 may be formed between the first insulating layer 131 and the second electrode 246, and the second conductive semiconductor layer 127 may be partially exposed through the separation region W2.
  • the reflective layer 248 may be disposed in the separation area W2 to contact the second conductive semiconductor layer 127. When the reflective layer 248 is in contact with the second conductivity type semiconductor layer 127, the reflective layer 248 is disposed to surround the second electrode 246, thereby preventing the separation between the second electrode 246 and the reflective layer 248. It can improve and the reliability of a semiconductor element can be ensured.
  • the third electrode 247 may be disposed below the second electrode 246. In addition, the third electrode 247 may be disposed between the second conductive layer 150 and the second electrode 246 to improve the current injection efficiency. If the second conductive layer 150 is directly connected to the second electrode 246 without the third electrode 247, since the reflective layer 248 is nonconductive, the thickness of the second electrode 246 is thick for sufficient current dispersion. You must lose. When the thickness of the second electrode 246 is increased, the optical characteristics of the semiconductor device may be degraded because the probability that the light emitted from the active layer 126 is absorbed by the second electrode 246 may be increased.
  • the second electrode 246 When the thickness of the second electrode 246 is less than 1 nm, the second electrode 246 may be difficult to be disposed properly, and thus the electrical characteristics may be degraded. When the thickness of the second electrode 246 exceeds 15 nm, the light absorption efficiency is increased and the light extraction efficiency of the semiconductor device is reduced. Can be.
  • the thickness of the third electrode 247 may be 200 nm to 1.0 ⁇ m, but is not limited thereto.
  • the reflective layer 248 may include a first hole 248a exposing a portion of the third electrode 247.
  • the exposed third electrode 247 may be electrically connected to the second conductive layer 150.
  • the width of the first hole 248a may be smaller than the width W1 of the third electrode 247.
  • a separation space may be formed between the third electrode 247 and the reflective layer 248 to reduce light extraction efficiency.
  • the third electrode 247 includes a first layer 247a including aluminum and a second layer 247b disposed between the second electrode 246 and the first layer 247a. can do.
  • the first layer 247a including Al may also function as a reflective layer that reflects ultraviolet light.
  • the adhesive force between Al and ITO may not be sufficient to suppress peeling phenomenon due to agglomeration, migration, etc. of heat or other materials generated during operation of the semiconductor device. Therefore, the second layer 247b may serve to adhere the first layer 247a to the second electrode 246.
  • the second layer 247b may include at least one of chromium (Cr) and titanium (Ti) nickel (Ni).
  • the third layer 247c may be disposed below the first layer 247a.
  • the third layer 247c may serve to prevent the atoms (aluminum) of the first layer 247a from being migrated to a neighboring layer or to bond with another layer.
  • the third layer 247c may include at least one of Ni, Ti, No, Pt, W, Au, and Ni.
  • the third electrode may reflect ultraviolet light including Al, but the light extraction efficiency may not be good because the second layer absorbs ultraviolet light. As shown in FIG. 15A, as the area of the third electrode 247 is wider, the absorption area of the second layer 247b may increase, thereby reducing light extraction efficiency.
  • the reflection efficiency may be improved by using the DBR reflective layer 248 having high reflectance of ultraviolet light.
  • the DBR reflective layer 248 having high reflectance of ultraviolet light. Referring to FIG. 15B, it can be seen that when the ITO light transmitting electrode is used as the second electrode and the DBR is used as the reflecting layer, the reflectance of 280 nm ultraviolet light is higher than that of the Al reflecting layer.
  • the DBR reflective layer 248 is non-conductive, the current injection area is small, so that the thickness of the second electrode 246 should be thick to increase the current dispersion efficiency.
  • the thickness of the second electrode 246 can be controlled to be thin by dispersing the current using the third electrode 247.
  • the third electrode 247 As the area of the third electrode 247 increases, current dispersion efficiency may be improved, but light extraction efficiency may decrease. That is, the current spreading efficiency and the light extraction efficiency may be in a trade-off relationship. Therefore, an appropriate area ratio of the third electrode 247 may be important.
  • the area ratio of the third electrode 247 and the reflective layer 248 may be 1: 0.8 to 1: 1.3 on the plane.
  • the area of the third electrode 247 and the reflective layer 248 may be the maximum area on the plane.
  • the area ratio When the area ratio is larger than 1: 0.8, the area of the reflective layer 248 may be increased to improve light extraction efficiency. When the area ratio is smaller than 1: 0.8 (eg, 1: 0.6), the area of the reflective layer 248 may be reduced, which may reduce light extraction efficiency.
  • the area ratio is smaller than 1: 1.3, sufficient area of the third electrode may be secured to improve current dispersion efficiency.
  • the area ratio is greater than 1: 1.3, the area of the third electrode 247 may be relatively reduced, which may reduce current dispersion efficiency.
  • An area ratio of the first surface 127G and the third electrode 247 of the second conductive semiconductor layer 127 may be 1: 0.3 to 1: 0.7.
  • the area ratio is greater than 1: 0.3, the area of the third electrode 247 may be wider to have sufficient current dispersion efficiency, and when the area ratio is controlled to be less than 1: 0.7, light absorption by the third electrode 247 may be improved. Can be.
  • the area ratio is smaller than 1: 0.3, the area of the third electrode 247 may be smaller, which may reduce current dispersion efficiency.
  • the area ratio is larger than 1: 0.7, the light absorption area of the third electrode 247 may be increased to decrease the light extraction efficiency.
  • An area ratio of the first surface 127G and the first electrode 142 of the second conductive semiconductor layer 127 may be 1: 0.08 to 1: 0.15.
  • the area ratio is greater than 1: 0.08, the area of the first electrode 142 may be wider to have sufficient current dispersion efficiency, and when the area ratio is controlled to be less than 1: 0.15, light absorption by the first electrode 142 may be improved. Can be.
  • the area ratio is smaller than 1: 0.08, the area of the first electrode 142 may be smaller, which may reduce current dispersion efficiency.
  • the area ratio is larger than 1: 0.7, the gap between the first electrodes 142 is narrowed, so that a sufficient area of the third electrode 247 cannot be secured. Therefore, the area of the third electrode 247 is narrowed, which may reduce current dispersion efficiency.
  • the area of the third electrode 247 may be smaller than the area of the second electrode 246.
  • the ratio W3: W1 of the width W3 of the second electrode 246 and the width W1 of the third electrode 247 disposed between the adjacent recesses 128 is 1: 0.4 to 1: 0.8.
  • the width ratio is smaller than 1: 0.4, the area of the third electrode may be smaller to reduce current dispersion efficiency.
  • the width ratio is larger than 0.8, the light absorption area of the third electrode 247 may be increased to decrease the light extraction efficiency. can do.
  • the inclination angle ⁇ 1 of the reflective layer 248 may be 20 degrees to 80 degrees.
  • the reflectance may be reduced because the thickness of the reflective layer 248 may not be maintained.
  • the inclination angle is greater than 80 degrees, it is difficult to form the second conductive layer 150 on the side of the reflective layer 248.
  • FIG. 16 is a view illustrating a recess surrounded by a unit electrode
  • FIG. 17 is an enlarged view of portion A of FIG. 12.
  • each recess 128 may be disposed in the unit electrode 247-1.
  • the third electrode 247 may be a collection of unit electrodes 247-1 surrounding each recess 128.
  • the unit electrode 247-1 may be integrally formed to share sidewalls, but is not limited thereto. In exemplary embodiments, the unit electrodes 247-1 may be spaced apart from each other.
  • the area ratio of the hole S1 partitioned by the recess 128 and the unit electrode 247-1 may be 1: 2.0 to 1: 5.0. If the area ratio is less than 1: 2.0, the area of the reflective layer 248 may be reduced to reduce light extraction efficiency. If the area ratio is larger than 1: 5.0, the area of the reflective electrode is reduced to increase the current instead of the area of the reflective layer 248 to increase the current. There is a problem of poor dispersion efficiency.
  • the distance d1 between the third electrode 247 and the side surface of the semiconductor structure 120 may be 1.0 ⁇ m to 10 ⁇ m.
  • the separation distance d1 is smaller than 1.0 ⁇ m, securing a process margin may be difficult.
  • the separation distance d1 is larger than 10 ⁇ m, the current dispersion efficiency at the side surface may decrease.
  • the present invention is not limited thereto, and the third electrode 247 may be formed to the side surface of the semiconductor structure 120.
  • FIG. 18 is a modification of FIG. 13, and FIG. 19 is a modification of the third electrode of the present invention.
  • the reflective layer 248 may extend into the recess 128 along the first insulating layer 131. According to this configuration, since the reflective layer 248 is disposed in the recess 128, the light emitted in the TM mode from the active layer 126 may be reflected upward.
  • the second insulating layer 132 may cover the extension 248a of the reflective layer 248 extending into the recess 128.
  • the third electrode 247 may include a plurality of end portions 247b extending to the side of the semiconductor structure 120, and an edge electrode 247-2 connecting the plurality of end portions 247b. It may include.
  • the edge electrode 247-2 may be continuously disposed along the edge of the semiconductor structure 120. Therefore, the current dispersion efficiency can be improved even in the edge region.
  • the present invention is not limited thereto, and the edge electrode 247-2 may be divided into a plurality of electrodes.
  • FIG. 20 is a plan view of a semiconductor device according to a third exemplary embodiment of the present invention
  • FIG. 21 is a cross-sectional view taken along the B-B direction of FIG. 20.
  • the semiconductor device may include a plurality of recesses 128 and a plurality of third electrodes 247 in plan view.
  • Each third electrode 247 is spaced apart from each other, and may have a structure surrounded by the plurality of recesses 128.
  • the third electrode 247 may be disposed at a position where some recesses 128 are omitted.
  • the diameter of the third electrode 247 may be larger than the diameter of the recess 128, but is not limited thereto. In exemplary embodiments, the diameter of the third electrode 247 may be equal to or smaller than the diameter of the recess 128. In addition, the planar shape of the third electrode 247 may be a polygonal shape.
  • the second conductive layer 150 and the second electrode 246 are electrically connected, whereas in the region where the third electrode 247 is not disposed.
  • the second electrode 246 and the third electrode 247 may be insulated by the reflective layer 248. Accordingly, the area of the reflective layer 248 may be increased to improve light extraction efficiency.
  • FIG. 22 is a cross-sectional view illustrating a semiconductor device in accordance with a fourth embodiment of the present invention
  • FIG. 23 is an enlarged view of direction B in FIG. 22.
  • a plurality of third electrodes 247 may be disposed between the neighboring first recesses 128 and the second recesses 128. That is, one third electrode 247 is not integrally formed between the neighboring first recess 128 and the second recess 128, but a plurality of third electrodes 247 may be disposed. . Thus, the current spreading efficiency can be further improved.
  • FIG. 24 is a conceptual view illustrating a semiconductor device in accordance with a fifth embodiment of the present invention
  • FIG. 25A is an enlarged view of portion A of FIG. 24, and
  • FIG. 25B is a partially enlarged view of FIG. 25A.
  • a semiconductor device may include a semiconductor structure 120 including a first conductive semiconductor layer 124, a second conductive semiconductor layer 127, and an active layer 126, and a first conductive layer.
  • the first electrode 142 is electrically connected to the type semiconductor layer 124
  • the second electrode 146 is electrically connected to the second conductive semiconductor layer 127.
  • the first conductive semiconductor layer 124, the active layer 126, and the second conductive semiconductor layer 127 may be disposed in the first direction (Y direction).
  • first direction (Y direction) which is the thickness direction of each layer, is defined as the vertical direction
  • second direction (X direction) perpendicular to the first direction (Y direction) is defined as the horizontal direction.
  • the basic structure of the semiconductor device may be applied with the features described with reference to FIG. 1.
  • the first insulating layer 131 may electrically insulate the first electrode 142 from the active layer 126 and the second conductive semiconductor layer 127. In addition, the first insulating layer 131 may electrically insulate the second electrode 146 and the second conductive layer 150 from the first conductive layer 165. In addition, the first insulating layer 131 may function to prevent side surfaces of the active layer 126 from being oxidized during the process of the semiconductor device.
  • the first insulating layer 131 may be formed by selecting at least one selected from the group consisting of SiO 2 , SixOy, Si 3 N 4, SixNy, SiO x Ny, Al 2 O 3 , TiO 2 , AlN, and the like, but is not limited thereto.
  • the first insulating layer 131 may be formed in a single layer or multiple layers.
  • the first insulating layer 131 may be a distributed Bragg reflector (DBR) having a multilayer structure including silver Si oxide or a Ti compound.
  • DBR distributed Bragg reflector
  • the present invention is not limited thereto, and the first insulating layer 131 may include various reflective structures.
  • the light extraction efficiency may be improved by reflecting the light L1 emitted toward the side from the active layer 126 upward. In this case, as the number of recesses 128 increases, the light extraction efficiency may be more effective.
  • the diameter W3 of the first electrode 142 may be 24 ⁇ m or more and 50 ⁇ m or less. If this range is satisfied, it may be advantageous for current dispersion, and a large number of first electrodes 142 may be disposed.
  • the diameter W3 of the first electrode 142 is greater than or equal to 24 ⁇ m, a sufficient amount of current injected into the first conductivity type semiconductor layer 124 can be ensured, and when the diameter is less than or equal to 50 ⁇ m, the first conductivity type semiconductor layer
  • the number of the plurality of first electrodes 142 disposed in the area of 124 can be sufficiently secured and the current dispersion characteristic can be secured.
  • the diameter W1 of the recess 128 may be 38 ⁇ m or more and 60 ⁇ m or less.
  • the diameter W1 of the recess 128 may be disposed under the second conductivity type semiconductor layer 127 to define the largest area of the recess 128.
  • the diameter W1 of the recess 128 may be a diameter of the recess 128 disposed on the bottom surface of the second conductive semiconductor layer 127.
  • the first electrode 142 is of a first conductivity type. It is possible to secure a process margin for securing an area for electrically connecting with the semiconductor layer 124, and when the thickness is 60 ⁇ m or less, it is possible to prevent the volume of the active layer 124 which decreases to arrange the first electrode 142. And the luminous efficiency may therefore deteriorate.
  • the inclination angle ⁇ 5 of the recess 128 may be 70 degrees to 90 degrees. If the area range is satisfied, it may be advantageous to form the first electrode 142 on the upper surface, and a large number of recesses 128 may be formed.
  • the area of the active layer 124 removed may increase, but the area in which the first electrode 142 is disposed may be smaller. Therefore, the current injection characteristic can be lowered, and the luminous efficiency can be lowered. Therefore, the area ratio of the first electrode 142 and the second electrode 146 may be adjusted by using the inclination angle ⁇ 5 of the recess 128.
  • the thickness d2 of the first electrode 142 may be thinner than the thickness d3 of the first insulating layer 131, and may have a distance d4 of 0 ⁇ m to 4 ⁇ m from the first insulating layer 131. Can be.
  • the gap-fill characteristic of the second insulating layer 132 may be improved by having the separation distance d4 from the first insulating layer 131.
  • the separation distance d4 between the first electrode 142 and the first insulating layer 131 may be 0 ⁇ m or more and 4 ⁇ m or less.
  • the width of the first insulating layer 131 disposed on the upper surface of the recess 128 may be secured.
  • the secured width of the first insulating layer 131 may provide a current blocking layer function, thereby ensuring reliability of the semiconductor device.
  • the upper surface 143 of the recess 128 may include a first region d5, a second insulating layer 132, and a first conductive semiconductor in contact with the first insulating layer 131 and the first conductive semiconductor layer 124.
  • the second region d4 may contact the layer 124, and the third region d6 may contact the first electrode layer 142 and the first conductive semiconductor layer 124.
  • the third region d6 may be equal to the width W3 of the first electrode 142.
  • the first insulating layer 142 and the second insulating layer 132 are made of the same material, the first insulating layer 142 and the second insulating layer 132 may not be separated from each other by physical and / or chemical bonding. It may be.
  • the sum of the width of the first region d5 and the width of the second region d4 may be defined as the width of the first region d5 or the width of the second region d4.
  • the third region d6 is narrowed and the first region is narrowed.
  • the third region d6 may be widened.
  • the width of the first region d5 may be 5 ⁇ m to 14 ⁇ m.
  • the thickness is 5 ⁇ m or more, the process margin for securing the first region d5 can be secured, and the reliability of the semiconductor device can be improved because the first region d5 can be secured.
  • the recess 128 has a diameter W1 and an inclination angle ⁇ 5 of the recess, the width W3 of the first electrode layer 142 may be reduced, thereby deteriorating an electrical characteristic.
  • the width of the third region d6 may be determined by adjusting the width of the first region d5 and the width of the second region d4 in order to uniformize the current distribution of the semiconductor device and to ensure current injection characteristics. .
  • the area in which the second electrode 146 may be disposed may be reduced.
  • the ratio between the total area of the first electrode 142 and the total area of the second electrode 246 can be determined, and the recesses for optimizing the current density by matching the density of electrons and holes can be determined.
  • the width of 128 and / or the total area of the recess 128 can be freely designed within this range.
  • the thickness of the second electrode 146 may be thinner than the thickness of the first insulating layer 131. Therefore, the step coverage characteristics of the second conductive layer 150 and the second insulating layer 132 surrounding the second electrode 146 can be secured, and the reliability of the semiconductor device can be improved.
  • the second electrode 146 may have a first separation distance S2 of 1 ⁇ m to 4 ⁇ m from the first insulating layer 131. When the separation distance is 1 ⁇ m or more, the process margin of the process of disposing the second electrode 146 between the first insulating layers 131 can be ensured, thereby improving the electrical characteristics, optical characteristics, and reliability of the semiconductor device. Can be. When the separation distance is 4 ⁇ m or less, the entire area in which the second electrode 146 may be disposed may be secured, and operating voltage characteristics of the semiconductor device may be improved.
  • the second conductive layer 150 may cover the second electrode 146. Accordingly, the second electrode pad 166, the second conductive layer 150, and the second electrode 146 may form one electrical channel.
  • the second conductive layer 150 completely surrounds the second electrode 146 and may be in contact with the side surface and the top surface of the first insulating layer 131.
  • the second conductive layer 150 is made of a material having good adhesion to the first insulating layer 131, and at least one material selected from the group consisting of materials such as Cr, Al, Ti, Ni, Au, and the like. It may be made of an alloy, and may be made of a single layer or a plurality of layers.
  • the thermal and electrical reliability of the second electrode 146 may be improved.
  • it may have a reflection function to reflect the light emitted between the first insulating layer 131 and the second electrode 146 to the top.
  • the second conductive layer 150 may be disposed at a first separation distance S2 between the first insulating layer 131 and the second electrode 146.
  • the second conductive layer 150 may contact the side and top surfaces of the second electrode 146 and the side and top surfaces of the first insulating layer 131 at the first separation distance S1.
  • a region where the second conductive layer 150 and the second conductive semiconductor layer 126 contact each other to form a Schottky junction within the first separation distance S2 may be disposed, and a current is formed by forming a Schottky junction. Dispersion can be facilitated.
  • the present invention is not limited thereto, and the resistance between the second conductive layer 150 and the second conductive semiconductor layer 126 is higher than the resistance between the second electrode 146 and the second conductive semiconductor layer 126. It can be arranged freely within this larger configuration.
  • the second insulating layer 132 may electrically insulate the second electrode 146 and the second conductive layer 150 from the first conductive layer 165.
  • the first conductive layer 165 may be electrically connected to the first electrode 142 through the second insulating layer 132.
  • the second insulating layer 132 and the first insulating layer 131 may be formed of the same material or may be formed of different materials.
  • the first conductive semiconductor layer 124 may have a 1-2 conductive semiconductor layer 124b having a relatively low Al composition and a 1-1 conductive semiconductor layer 124a having a relatively high Al composition. have.
  • the composition of Al in the first-first layer 124a may be 60% to 70%, and the composition of Al in the 1-2 type conductive semiconductor layer 124b may be 40% to 50%.
  • the composition of Al may be lower than that of the well layer.
  • the 1-2 conductive semiconductor layer 124b is disposed adjacent to the active layer 126. Therefore, the first-second conductivity type semiconductor layer 124b having a relatively low Al composition may be electrically connected to the first electrode 142, and the first-second conductivity type semiconductor layer 124b may be the first electrode 142. ) Can be contacted.
  • the first electrode 142 may be disposed in the 1-2 conductive semiconductor layer 124b. That is, the recess 128 is preferably formed up to the region of the 1-2 conductive semiconductor layer 124b. This is because the first-first conductive semiconductor layer 124a has a high Al composition and relatively low current dispersion characteristics. Accordingly, the ohmic may be formed by contacting the first conductive layer 124b with the first electrode 142 in the recess 128.
  • the structure described with reference to FIG. 1 may be applied to the second conductive layer 150, the second electrode 146, the second electrode pad 166, the bonding layer 160, and the conductive substrate 170.
  • FIG. 26 is a graph illustrating an aluminum composition in a thickness direction of a semiconductor device according to some example embodiments of the present inventive concept.
  • the second conductivity-type semiconductor layer 127 of the semiconductor device includes aluminum in the surface layer in contact with the second electrode 246.
  • the GaN thin film absorbs most of light having an ultraviolet wavelength, thereby deteriorating optical characteristics. Therefore, in the embodiment, it is necessary to adjust the aluminum composition of the second conductive semiconductor layer 127 so that ohmic contact with the second electrode is possible without the GaN thin film.
  • the first conductive semiconductor layer 124, the active layer 126, and the second conductive semiconductor layer 127 may be AlGaN or AlN. However, it is not necessarily limited thereto.
  • the active layer 126 has a plurality of well layers 126a and a barrier layer 126b, and an electron blocking layer 129 may be disposed between the active layer 126 and the second conductive semiconductor layer 127.
  • the electron blocking layer 129 may have an aluminum composition of 50% to 90%.
  • the aluminum composition of the blocking layer 129 is less than 50%, the height of the energy barrier for blocking electrons may be insufficient, and the light emitted from the active layer 126 may be absorbed by the blocking layer 129, and the aluminum composition may be 90%. Exceeding the% may deteriorate the electrical characteristics of the semiconductor device.
  • the electron blocking layer 129 may include a first-first section 129a and a first-second section 129b. As the first-first section 129a approaches the blocking layer 129, the aluminum composition may increase.
  • the aluminum composition of the first-first section 129a may be 80% to 100%. Therefore, the first-first section 129a of the electron blocking layer 129 may be a portion having the highest Al content in the semiconductor structure.
  • the first-first section 129a may be AlGaN or AlN. Alternatively, the first-first section 129a may be a superlattice layer in which AlGaN and AlN are alternately arranged.
  • the thickness of the first-first section 129a may be about 0.1 nm to 4 nm.
  • the first conductivity-type semiconductor layer 124 is composed of an n-type semiconductor
  • the second conductivity-type semiconductor layer 127 is composed of a p-type semiconductor
  • the second conductivity-type semiconductor in the first conductivity-type semiconductor layer 127 is formed.
  • the thickness of the first-first section 129a may be 0.1 nm or more.
  • the thickness of the first-first section 129a may be less than or equal to 4 nm to ensure hole injection efficiency from the second conductivity-type semiconductor layer 127 to the active layer 126.
  • the present invention is not limited thereto, and holes are formed from the second conductive semiconductor layer 127 to the active layer 126 rather than a function of blocking electron movement from the first conductive semiconductor layer 127 to the second conductive semiconductor layer 127.
  • the thickness of the first-first section (129a) may be disposed less than 0.1nm.
  • the blocking efficiency of electrons moving from the first conductivity type semiconductor layer 124 to the second conductivity type semiconductor layer 127 is ensured rather than the hole injection efficiency from the second conductivity type semiconductor layer 127 to the active layer 126.
  • the thickness of the first-first section 129a may exceed 4 nm.
  • the thickness of the first-first section 129-a is disposed to be 0.1 nm or more and 4 nm or less, but the numerical ranges mentioned above should be selectively secured to either the electronic blocking function or the hole injection function. You may escape.
  • the first-second section 129b may include an undoped section.
  • the first-second section 129b may serve to prevent the dopant from being dispersed in the active layer 126.
  • the second conductive semiconductor layer 127 may include a 2-1 conductive semiconductor layer 127a and a 2-2 conductive semiconductor layer 127b.
  • the 2-1 conductivity type semiconductor layer 127a may be a surface area in direct contact with the second electrode 146.
  • the second-second conductive semiconductor layer 127b may be disposed between the electron blocking layer 129 and the second-first conductive semiconductor layer 127a.
  • the aluminum composition of the second-first conductive semiconductor layer 127a may be lower than that of the well layer 126a.
  • the well layer 126a may be a well layer having the lowest Al composition among the plurality of well layers. If the aluminum composition of the 2-1 conductive semiconductor layer 127a is higher than that of the well layer 126a, the resistance between the 2-1 conductive semiconductor layer 127a and the second electrode 146 becomes high. There is a problem that sufficient ohmic is not achieved and current injection efficiency is lowered.
  • the average aluminum composition of the 2-1 conductive semiconductor layer 127a may be 1% to 35%, or 1% to 10%. If it is greater than 35%, sufficient ohmic may not be achieved with the second electrode, and if the composition is smaller than 1%, there is a problem of absorbing light because it is almost close to the GaN composition.
  • the thickness of the 2-1 conductive semiconductor layer 127a may be 1 nm to 10 nm.
  • the 2-1 conductivity type semiconductor layer 127a may absorb ultraviolet light because the composition of aluminum is low for ohmic. Therefore, it may be advantageous in terms of light output to control the thickness of the second-first conductivity-type semiconductor layer 127a as thin as possible.
  • the thickness of the 2-1 conductive semiconductor layer 127a is controlled to 1 nm or less, it is difficult to significantly reduce the aluminum composition.
  • the thickness is greater than 10 nm, the amount of light absorbed may be so large that the light output efficiency may be reduced.
  • the thickness of the second-second conductive semiconductor layer 127b may be greater than 10 nm and smaller than 100 nm.
  • the thickness of the second conductivity-type semiconductor layer 127b may be 25 nm.
  • the resistance may increase in the horizontal direction, thereby decreasing current injection efficiency.
  • the thickness of the second conductivity-type semiconductor layer 127b is greater than 100 nm, the resistance may increase in the vertical direction, thereby lowering the current injection efficiency.
  • the thickness of the 2-1 conductive semiconductor layer 127a may be smaller than the thickness of the 2-2 conductive semiconductor layer 127b.
  • the thickness ratio of the 2-1 conductive semiconductor layer 127a and the 2-2 conductive semiconductor layer 127b may be 1: 5 to 1:50.
  • the thickness ratio is smaller than 1: 5
  • the thickness of the 2-1 conductive semiconductor layer 127a may be too thick, thereby lowering the light output efficiency.
  • the thickness ratio is greater than 1:50
  • the thickness of the 2-1 conductive semiconductor layer 127a may be too thin. Therefore, it may be difficult to lower to the desired aluminum composition range within the thin thickness range. Thus, ohmic reliability may be lowered.
  • the aluminum composition of the second-conductive semiconductor layer 127b may be higher than that of the well layer 126a.
  • the aluminum composition of the well layer 126a may be about 30% to 50% to generate ultraviolet light. If the aluminum composition of the 2-2 conductivity type semiconductor layer 127b is lower than that of the well layer 126a, the light extraction efficiency may be reduced because the 2-2 conductivity type semiconductor layer 127b absorbs light. Can be.
  • the average aluminum composition of the second conductivity-type semiconductor layer 127b may be greater than 40% and less than 80%. If the aluminum composition of the second conductive semiconductor layer 127b is less than 40%, there is a problem of absorbing light, and if greater than 80%, the current injection efficiency is deteriorated. For example, the average aluminum composition of the second-second conductive semiconductor layer 127b may be 50%.
  • the second-2 conductivity type semiconductor layer 127b may become smaller as the aluminum composition moves away from the active layer 126 in some sections 127c.
  • the aluminum reduction width of the 2-1 conductivity type semiconductor layer 127a may be greater than the aluminum reduction width of the portion 127c of the 2-2 conductivity type semiconductor layer 127b. That is, the change rate of Al composition of the 2-1 conductivity type semiconductor layer 127a in the thickness direction may be greater than the change rate of Al composition of the 2-2 conductivity type semiconductor layer 127b.
  • the aluminum composition should be higher than that of the well layer 126a, so that the decrease may be relatively slow.
  • the 2-1 conductivity type semiconductor layer 127a has a small thickness and a large variation in the aluminum composition, the decrease in the aluminum composition may be relatively large.
  • the lowest point of aluminum in the second conductivity type semiconductor layer 127 may be a point where the 2-1 conductivity type semiconductor layer 127a contacts the second electrode.
  • the aluminum composition may be 1% to 10%. When the aluminum composition is less than 1%, the amount of light absorption may be increased. When the aluminum composition is greater than 10%, the ohmic characteristics may be deteriorated.
  • the lowest point of aluminum in the second conductivity-type semiconductor layer 127 may be the point closest to the electron blocking layer 129.
  • the aluminum composition of the electron blocking layer 129 may be 50% to 90%. Therefore, the maximum aluminum composition of the second conductivity-type semiconductor layer 127 may be 50% to 90%.
  • the aluminum composition change in the thickness direction of the second conductivity-type semiconductor layer 127 may be 1% to 90%, or 10% to 90%.
  • the lowest aluminum composition and the highest aluminum composition ratio of the second conductivity-type semiconductor layer 127 may be 1: 5 to 1:90.
  • FIG. 27A and 27B are views for explaining a configuration in which light output is improved according to a change in the number of recesses
  • FIG. 28 is a plan view of a semiconductor device according to a fifth embodiment of the present invention
  • FIG. 29 is a view of the present invention
  • 30 is a plan view of the semiconductor device according to the sixth embodiment
  • FIG. 30 is a plan view of the semiconductor device according to the seventh embodiment
  • FIG. 31 is a plan view of the semiconductor device according to the eighth embodiment of the present invention
  • FIG. 32 Is a graph measuring the light output and the WPE of the semiconductor device according to the fifth to eighth embodiments.
  • the GaN-based semiconductor structure 120 when the GaN-based semiconductor structure 120 emits ultraviolet rays, the GaN-based semiconductor structure 120 may include aluminum. When the aluminum composition of the semiconductor structure 120 is increased, current dispersal characteristics of the semiconductor structure 120 decrease. Can be. In addition, when the active layer 126 emits UV light including Al, the amount of light emitted to the side of the active layer 126 is increased compared to the GaN-based blue light emitting device (TM mode). This TM mode can occur mainly in ultraviolet semiconductor devices.
  • TM mode GaN-based blue light emitting device
  • Ultraviolet semiconductor devices have poor current dissipation characteristics compared to blue GaN-based semiconductor devices. Accordingly, in the ultraviolet semiconductor device, it is necessary to dispose relatively many first electrodes 142 as compared to the blue GaN-based semiconductor device.
  • the current is distributed only to the neighboring points of the first electrodes 142, and the current density may be sharply lowered at a long distance. Therefore, the effective light emitting area P2 can be narrowed.
  • the effective emission area P2 may be defined as an area up to a boundary point having a current density of 40% or less based on the current density at the center of the first electrode 142 having the highest current density.
  • the effective light emitting region P2 may be adjusted according to the level of the injection current and the composition of Al within a range of 40 ⁇ m from the center of the recess 128.
  • the low current density region P3 may have a low current density and may emit less light than the effective light emitting region P2. Accordingly, the light output may be improved by further disposing the first electrode 142 in the low current density region P3 having a low current density or by using a reflective structure.
  • a GaN-based semiconductor device emitting blue light has excellent current dispersing characteristics, and thus, it is preferable to minimize the area of the recess 128 and the first electrode 142. This is because the area of the active layer 126 decreases as the area of the recess 128 and the first electrode 142 increases.
  • the composition of aluminum is high and current dispersal characteristics are relatively low, even if the area of the active layer 126 is sacrificed, the area and / or the number of the first electrodes 142 are increased so that the low current density region P3 is increased. It may be desirable to reduce or reduce the number of reflection structures in the low current density region P3.
  • the recesses 128 when the number of the recesses 128 is increased to 48, the recesses 128 may be arranged in a zigzag fashion without being disposed in a straight line in the horizontal and vertical directions. In this case, since the area of the low current density region P3 can be narrowed, most of the active layer 126 can participate in light emission.
  • Table 1 shows the total area (ISO area) of the semiconductor structures of Examples 1 to 4, the area (second area) of the p-omic electrode, the area (first area) of the n-omic electrode, the area ratio, and the number of recesses. was measured.
  • the semiconductor structure area may be a horizontal maximum cross-sectional area including the recess area.
  • the area of the first electrode may be the area of the n-ohmic electrode that increases as the number of the recesses 128 increases based on 100% of the area of the semiconductor structure.
  • the area of the second electrode may be the area of the p-omic electrode that decreases as the number of recesses 128 increases based on 100% of the area of the semiconductor structure.
  • Table 2 below measured the semiconductor structure area (ISO area), the recess area, the area of the second conductivity type semiconductor layer, the area of the first conductive layer, and the area of the second electrode pad of Examples 1 to 4.
  • the recess area is the total area of the recess that increases as the number of recesses increases based on the maximum area 100% of the semiconductor structure.
  • the area of each recess may be the maximum area in the thickness direction.
  • the area of the second conductivity type semiconductor layer is the total area of the second conductivity type semiconductor layer that decreases as the number of recesses increases based on 100% of the area of the semiconductor structure.
  • the first conductive layer area is the total area of the first conductive layer that decreases as the number of recesses increases based on 100% of the semiconductor structure.
  • the second electrode pad is designed to have a predetermined area regardless of the number of recesses based on 100% of the semiconductor structure.
  • the size of the semiconductor device, the recess, and the size of the first electrode were the same.
  • the diameter of the recess 128 is equally manufactured to 56 ⁇ m
  • the diameter of the first electrode is equal to 42 ⁇ m.
  • the first area where the plurality of first electrodes 142 contact the first conductivity type semiconductor layer 124 may be 4.9% or more and 8.6% or less of the horizontal maximum cross-sectional area of the semiconductor structure 120.
  • the first area of the plurality of first electrodes 142 is 4.9% or more, sufficient current injection characteristics can be secured, so that light output can be secured.
  • the areas of the active layer and the second electrode are secured. The operating voltage characteristic and the light output can be improved.
  • the total area of the plurality of recesses 128 may be 16% or more and 24.6% or less of the horizontal maximum cross-sectional area of the semiconductor structure 120. If the total area of the recess 128 does not satisfy the above condition, it is difficult to control the total area of the first electrode 142 to 4.9% or more and 8.6% or less.
  • the semiconductor structure 120 is configured based on AlGaN, since the resistance of the semiconductor structure 120 is high, the current injection characteristic injected from the outside into the semiconductor structure 120 and the current dispersion characteristic in the semiconductor structure 120 are It may be lower than the GaN-based semiconductor structure 120.
  • the total area of the recess is 16% or more of the horizontal maximum cross-sectional area of the semiconductor structure 120, it is possible to secure electrical characteristics by current injection and current dispersion characteristics, and when the 24.6% or less active layer 126 emits light. ) To secure the optical characteristics such as light output.
  • the second area where the second electrode 246 contacts the second conductive semiconductor layer 127 may be 41.9% or more and 62.6% or less of the maximum horizontal cross-sectional area of the semiconductor structure 120.
  • the second area may be a total area where the second electrode 246 contacts the second conductive semiconductor layer 127.
  • the second area for securing an operating voltage characteristic of the semiconductor device and securing an injection efficiency of holes for injecting holes into the semiconductor structure 120 may be 42% or more of the horizontal maximum cross-sectional area of the semiconductor structure 120. .
  • the second area is the semiconductor. It may be 62.6% or less of the maximum horizontal cross-sectional area of the structure 120.
  • the current dispersion efficiency may be relatively lowered. Therefore, it is necessary to widen the contact area of the second electrode to improve the current dispersion efficiency.
  • the sixth embodiment (# 2) having 96 number of recesses 128 based on 100% of the light output of the fifth embodiment (# 1) having 79 recesses 128 ) Has a 4% improvement in light output over the first embodiment.
  • the seventh embodiment (# 3) in which the number of recesses was increased to 116 the light output was improved by 3% compared to the fifth embodiment.
  • the eighth embodiment (# 4) in which the number of recesses is increased to 137 it can be seen that the light output is reduced rather than the seventh embodiment.
  • the power conversion efficiency (Wall-Plug Efficiency) also shows the same tendency as the light output.
  • the power conversion efficiency may be output power / input power.
  • the horizontal dotted line E1 may be a desired WPE criterion, but is not limited thereto.
  • the first area and the second area have an inverse relationship. That is, when the number of recesses is increased to increase the number of first electrodes, the area of the second electrode is reduced. In the fifth and eighth embodiments, the first area or the second area is excessively reduced, and as a result, the light output is deteriorated.
  • the ratio (first area: second area) of the first area where the plurality of first electrodes contact the first conductive semiconductor layer and the second area where the second electrode contacts the second conductive semiconductor layer is 1; Greater than 4.87 and less than 1: 12.7.
  • the second area with respect to the first area can be sufficiently secured. Accordingly, the current injection characteristic by the second electrode is improved to secure a balance between electrons and holes injected into the active layer 126. In addition, the current injection characteristics of the semiconductor device can be improved.
  • Example 8 since the second area is only about 41.9%, a balance between electrons and holes injected into the active layer 126 may not be secured, and current injection characteristics of the semiconductor device may deteriorate. As a result, the light output of the semiconductor element can be reduced.
  • the area ratio may be adjusted smaller than 1: 12.7 to secure the first area relative to the second area.
  • the area ratio is adjusted to be smaller than 1: 12.7, the current injection characteristic by the first electrode may be improved and the balance between electrons and holes injected into the active layer 126 may be secured, thereby improving current injection characteristics of the semiconductor device. For example, in Example 1, since the first area is only about 4.9%, the current injection efficiency may decrease.
  • an area ratio of the horizontal maximum area and the recess of the semiconductor structure may be greater than 1: 0.16 and less than 1: 0.246.
  • the area ratio is larger than 1: 0.16, a sufficient first area may be secured to improve current injection characteristics by the first electrode.
  • the area ratio is smaller than 1: 0.246, the second area may be secured to improve current injection characteristics.
  • FIG. 33 is a conceptual view illustrating a semiconductor device in accordance with a ninth embodiment, and FIG. 34 is a plan view of FIG. 33.
  • the above-described configuration may be applied to the light emitting structure 120 as it is.
  • the plurality of recesses 128 may pass through the second conductivity-type semiconductor layer 127 and the active layer 126 to be disposed up to a portion of the first conductivity-type semiconductor layer 124.
  • the first electrode 142 may be disposed on the top surface of the recess 128 to be electrically connected to the first conductive semiconductor layer 124.
  • the second electrode 146 may be formed under the second conductive semiconductor layer 127.
  • the second electrode 146 may be electrically connected to the 2-1 conductive type semiconductor layer 127a.
  • the average composition of the 2-1 conductive semiconductor layer 127a in contact with the second electrode 146 is 10% to 35%, the ohmic connection may be easily performed.
  • the thickness of the 2-1 conductive semiconductor layer 127a is greater than 1 nm and smaller than 10 nm, the amount of light absorption may be small.
  • the second electrode 146 is a metal oxide such as ITO
  • the 2-1 conductive semiconductor layer 127a may be in contact with oxygen. Accordingly, aluminum disposed on the surface of the 2-1 conductivity type semiconductor layer 127a may react with oxygen to form aluminum oxide.
  • nitrides such as NO or oxides of Ga 2 O 3 may be further formed.
  • the second electrode pad 166 may be disposed in one corner region of the semiconductor device.
  • the second electrode pad 166 may have a recessed portion and a convex portion at an upper surface thereof because the center portion thereof is recessed. Wires (not shown) may be bonded to the recesses of the upper surface. Therefore, the adhesive area is widened, and the second electrode pad 166 and the wire may be more firmly bonded.
  • the first insulating layer 131 may electrically insulate the first electrode 142 from the active layer 126 and the second conductive semiconductor layer 127. In addition, the first insulating layer 131 may electrically insulate the second electrode 146 and the second conductive layer 150 from the first conductive layer 165.
  • the semiconductor device may include a side reflector Z1 disposed at an edge thereof.
  • the side reflector Z1 may be formed by protruding the second conductive layer 150, the first conductive layer 165, and the substrate 170 in a thickness direction (Y-axis direction). Referring to FIG. 34, the side reflector Z1 may be disposed along an edge of the semiconductor device to surround the light emitting structure.
  • the second conductive layer 150 of the side reflector Z1 may protrude higher than the active layer 126 to reflect upwardly the light emitted from the active layer 126. Therefore, the light emitted in the horizontal direction (X-axis direction) can be upwardly reflected by the TM mode at the outermost part without forming a separate reflective layer.
  • An inclination angle of the side reflector Z1 may be greater than 90 degrees and smaller than 145 degrees.
  • the inclination angle may be an angle between the second conductive layer 150 and the horizontal plane (XZ plane). When the angle is smaller than 90 degrees or larger than 145 degrees, the efficiency of reflecting light moving toward the side upwards may be inferior.
  • FIG. 35 is a conceptual diagram of a semiconductor device package according to an embodiment of the present disclosure
  • FIG. 36 is a plan view of a semiconductor device package according to an embodiment of the present disclosure
  • FIG. 37 is a modification of FIG. 36.
  • the semiconductor device package may be disposed on the body 2 having the groove 3, the semiconductor device 1 disposed on the body 2, and the body 2 to be electrically connected to the semiconductor device 1. It may include a pair of lead frames (5a, 5b) to be connected.
  • the semiconductor device 1 may include all of the above configurations.
  • the body 2 may include a material or a coating layer that reflects ultraviolet light.
  • the body 2 may be formed by stacking a plurality of layers 2a, 2b, 2c, 2d, and 2e.
  • the plurality of layers 2a, 2b, 2c, 2d, and 2e may be the same material or may include different materials.
  • the groove 3 may be wider as it is farther from the semiconductor device, and a step 3a may be formed on the inclined surface.
  • the light transmitting layer 4 may cover the groove 3.
  • the light transmitting layer 4 may be made of glass, but is not limited thereto.
  • the light transmitting layer 4 is not particularly limited as long as it is a material that can effectively transmit ultraviolet light.
  • the inside of the groove 3 may be an empty space.
  • the semiconductor device 10 may be disposed on the first lead frame 5a and connected to the second lead frame 5b by a wire.
  • the second lead frame 5b may be disposed to surround side surfaces of the first lead frame.
  • the lead frame may include first to fifth lead frames 5a, 5b, 5c, 5d, and 5e.
  • the first semiconductor element 10a may be disposed on the first lead frame 5a and connected to the second lead frame 5b by a wire.
  • the second semiconductor device 10b may be disposed on the second lead frame 5b and connected to the third lead frame 5c by wires.
  • the third semiconductor device 10c may be disposed on the third lead frame 5c and connected to the fourth lead frame 5d by a wire.
  • the fourth semiconductor device 10d may be disposed on the fourth lead frame 5d and may be connected to the fifth lead frame 5e by a wire.
  • the semiconductor device may be applied to various kinds of light emitting devices.
  • the light emitting device may be a concept including a sterilizing device, a curing device, an exposure device, a lighting device, and a display device and a vehicle lamp. That is, the semiconductor device may be applied to various electronic devices disposed in a case to provide light.
  • the sterilization apparatus may include a semiconductor device according to the embodiment to sterilize a desired region.
  • the sterilizer may be applied to household appliances such as water purifiers, air conditioners and refrigerators, but is not necessarily limited thereto. That is, the sterilization apparatus can be applied to all the various products (eg, medical devices) requiring sterilization.
  • the water purifier may be provided with a sterilizing device according to the embodiment to sterilize the circulating water.
  • the sterilization apparatus may be disposed at a nozzle or a discharge port through which water circulates to irradiate ultraviolet rays.
  • the sterilization apparatus may include a waterproof structure.
  • the curing apparatus includes a semiconductor device according to an embodiment to cure various kinds of liquids.
  • Liquids can be the broadest concept that includes all of the various materials that cure when irradiated with ultraviolet light.
  • the curing apparatus may cure various kinds of resins.
  • the curing device may be applied to cure a cosmetic product such as a nail polish.
  • the exposure apparatus may transfer a desired pattern to the photosensitive film by placing a mask on which a desired pattern is formed on a sample coated with a photo-resist, which is a material reacting with light, and irradiating ultraviolet rays.
  • a photo-resist which is a material reacting with light, and irradiating ultraviolet rays.
  • semiconductor devices, circuit boards (PCBs), and display panels which are embedded as main components of electronic devices, may form fine circuit patterns using photolithography techniques in an exposure process.

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Abstract

Dans un mode de réalisation, l'invention concerne un dispositif à semi-conducteur comprenant : une structure semi-conductrice comprenant une première couche semi-conductrice conductrice, une seconde couche semi-conductrice conductrice, une couche active disposée entre la première couche semi-conductrice conductrice et la seconde couche semi-conductrice conductrice, et une pluralité d'évidements pénétrant dans la seconde couche semi-conductrice conductrice et la couche active de manière à être disposés jusqu'à une partie d'une région de la première couche semi-conductrice conductrice; une première électrode disposée à l'intérieur de la pluralité d'évidements de manière à être électroconnectée à la première couche semi-conductrice conductrice; une seconde électrode connectée électriquement à la seconde couche semi-conductrice conductrice; et une couche d'absorption de lumière disposée sur le bord de la structure semi-conductrice, la couche d'absorption de lumière et la seconde électrode étant disposées sur la surface inférieure de la structure semi-conductrice, et la couche d'absorption de lumière étant plus épaisse que la seconde électrode.
PCT/KR2018/005734 2017-05-18 2018-05-18 Dispositif à semi-conducteur et procédé de fabrication de dispositif à semi-conducteur WO2018212625A1 (fr)

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