WO2018210284A1 - 一种光伏装置、金属导线网络层状结构及其制造方法 - Google Patents

一种光伏装置、金属导线网络层状结构及其制造方法 Download PDF

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WO2018210284A1
WO2018210284A1 PCT/CN2018/087189 CN2018087189W WO2018210284A1 WO 2018210284 A1 WO2018210284 A1 WO 2018210284A1 CN 2018087189 W CN2018087189 W CN 2018087189W WO 2018210284 A1 WO2018210284 A1 WO 2018210284A1
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Prior art keywords
metal wire
main gate
wire network
strip
bonding
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PCT/CN2018/087189
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English (en)
French (fr)
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王运方
霍艳寅
代凤玉
曹志峰
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北京铂阳顶荣光伏科技有限公司
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Publication of WO2018210284A1 publication Critical patent/WO2018210284A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/044—PV modules or arrays of single PV cells including bypass diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present application relates to the field of solar cell modules, and in particular, to a photovoltaic device, a metal wire network layered structure, and a method of fabricating the same.
  • the photovoltaic module consists of several cells in series.
  • a bypass diode is connected in parallel to each of the photovoltaic modules, so that when a certain cell on the photovoltaic module exhibits a hot spot effect, The current value at both ends of the cell increases, so that the bypass diode connected in parallel with the cell is turned on, and the two ends of the cell are short-circuited by the bypass diode to stop the hot spot effect of the cell, thereby maximizing the maximum Reduce the effects of the hot spot effect.
  • the purpose of the application is to provide a photovoltaic device, a metal wire network layered structure and a manufacturing method thereof, and the metal wire network and the solar cell panel can be rolled into a roll for use in a roll-to-roll process in a flexible solar energy production process.
  • the metal wire network is compositely connected to the solar panel.
  • the present application provides a metal wire network layered structure, including:
  • the metal conductive network includes a plurality of first main gate lines, and the plurality of first main gate lines are disposed in parallel with each other;
  • the diode strip includes a strip layer and a bonding conductive layer attached to one side of the strip layer, the bonding conductive layer includes a plurality of bonding segments, and the bonding segment corresponds to a first main gate line ;
  • the strip layer comprises a plurality of diodes, a joint of the adjacent diodes is bonded to a bonding section, and a sub-strip is formed between adjacent bonding sections, and each sub-strip passes through the bonding sections at both ends thereof and corresponding Two first main gate lines are connected, and the two first main gate lines are adjacent.
  • the two adjacent first main gate lines include M second main gate lines, and the M second main gate lines are disposed in parallel with each other, and the length of the first main gate lines is greater than The length of the second main gate line or the length of the first main gate line is equal to the length of the second main gate line, and M is an integer greater than or equal to 1.
  • the strip layer further comprises a plurality of metal foil sheets
  • An adjacent two diodes are connected by the metal foil, the metal foil comprising a connecting portion, the diode being connected to the connecting portion, the connecting portion having a width greater than a width of other portions of the metal foil.
  • the metal wire network further includes: a plurality of fine gate lines disposed in parallel with each other, and each of the plurality of first main gate lines is perpendicular to each of the plurality of fine gate lines .
  • it also includes:
  • a protective film is disposed on the other side of the strip layer.
  • the material of the protective film is an insulating material, which is a polyterephthalic plastic, a sarin resin or a trinitrophenol.
  • the protective film has a thickness greater than or equal to 0.1 mm and less than or equal to 0.3 mm.
  • the bonding segment is a conductive tape.
  • the conductive tape is located at an intermediate position between two adjacent diodes, and the conductive tape has a thickness greater than or equal to 0.1 mm and less than or equal to 0.5 mm.
  • it also includes:
  • Release paper the release paper being disposed on the bonding section.
  • the release paper is silicone oil paper, and the release paper has a thickness greater than or equal to 0.5 mm and less than or equal to 1 mm.
  • the present application provides a photovoltaic device comprising the metal wire network layer structure of any one of the first aspect or the first aspect;
  • a main cell sheet is disposed between two adjacent first main gate lines in the metal wire network layer structure, the main cell sheet includes N series sub-cell sheets, and two adjacent sub-cell sheets pass through The two main gate lines are connected, and N is an integer greater than or equal to 1.
  • the present application provides a method for fabricating a metal wire network layer structure, the method comprising:
  • the metal wire network including a plurality of first main gate lines, the plurality of first main gate lines being disposed in parallel with each other;
  • the diode strip comprising a strip layer and a bonded conductive layer attached to one side of the strip layer, the bonded conductive layer comprising a plurality of bonding segments, the bonding segments corresponding to a a first main gate line;
  • the strip layer comprises a plurality of diodes, a joint of adjacent diodes is bonded to a bonding section, and a sub-strip is formed between adjacent bonding sections;
  • Each of the sub-strips is connected to the corresponding two first main gate lines through the bonding segments at both ends thereof, the two first main gate lines being adjacent.
  • the method further includes:
  • a main cell is disposed between two adjacent first main gate lines in the metal wire network, the main cell includes N series sub-cells, and two adjacent sub-cells are connected by a second main gate line.
  • N is an integer greater than or equal to 1.
  • the present application provides a metal wire network layer structure, which can be used for assembling electrical connection of a flexible solar panel, and is suitable for integral forming of a panel and a circuit and a component of a roll-to-roll process, thereby improving production efficiency and production. stability.
  • the metal wire network layered structure in the form of a roll package of the present application is used for the solar photovoltaic module, especially in the production process of the flexible photovoltaic module, and functions as a bypass diode.
  • diodes and package packages Mainly used in the "roll-to-roll” production process, especially in the production process of "bus bar” and "bypass diode” in the flexible solar energy production process.
  • the application solves the problem that a single diode is difficult to be integrated into the chip during the production process of the photovoltaic module, which simplifies the production process and improves the production efficiency.
  • FIG. 1 is a schematic diagram of a layered structure of a metal wire network according to an embodiment of the present application.
  • FIG. 2 is a schematic diagram showing another layered structure of a metal wire network according to an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a diode strip according to an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a photovoltaic device according to an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a photovoltaic device according to an embodiment of the present application.
  • FIG. 6 is a flow chart of a method for manufacturing a metal wire network layered structure according to an embodiment of the present application.
  • FIG. 7 is a schematic diagram of a tiled photovoltaic component and a diode strip provided by an embodiment of the present application.
  • an embodiment of the present application provides a metal wire network layer structure, including: a metal wire network a and a diode strip b;
  • the metal conductive network a includes a plurality of first main gate lines 1 , and a plurality of first main gate lines 1 are arranged in parallel with each other;
  • the diode strip b comprises a strip layer 2 and a bonded conductive layer 3 attached to one side of the strip layer 2, the bonded conductive layer 3 comprises a plurality of bonding segments 31, and the bonding segment 31 corresponds to a first main gate line 1 ;
  • the strip layer 2 comprises a plurality of diodes 21, a junction of adjacent diodes 21 is bonded to a bonding section 31, and a sub-strip c is formed between adjacent bonding sections 31, and each sub-strip c is adhered through both ends thereof.
  • the junction 31 is connected to the corresponding two first main gate lines 1, which are adjacent to each other.
  • each sub-strip c includes two adjacent bonding segments 31 and a diode 21 between the two adjacent bonding segments 31.
  • the plurality of first main gate lines 1 are equally spaced.
  • the two adjacent first main gate lines 1 include M second main gate lines 4, and the M second main gate lines 4 are disposed in parallel with each other.
  • the length of the first main gate lines 1 may be greater than The length of the two main gate lines 4 or the length of the first main gate line 1 is equal to the length of the second main gate line 4, and M is an integer greater than or equal to zero.
  • the metal conductive network a includes two main gate lines of the first main gate line 1 and the second main gate line 4, and each of the main gate lines in the metal conductive network a is parallel and equally spaced.
  • the metal conductive network a includes a plurality of fine gate lines 5 arranged in parallel with each other, and each of the fine gate lines 5 is perpendicular to each of the first main gate lines 1 and each of the second main gate lines 4. .
  • the manner in which the sub-strip c is connected to the corresponding two first main gate lines 1 through the bonding segments 31 at both ends thereof is as follows:
  • the length of the first main gate line 1 is greater than the length of the second main gate line 4, and the first main gate line 1 includes a protrusion 11 extending beyond the boundary of the metal wire network a; for each sub-strip c, A bonding section 31 of the sub-strip c is pasted on the projection 11 of a first main grid line 1 in the metal wire network a, and the other bonding section 31 of the sub-strip c is pasted in the metal wire network On the protrusion 11 of the other first main gate line 1 in a, the one first main gate line 1 and the other first main gate line 1 are adjacent to each other, so that the sub-strip c is passed through both ends thereof The bonding section 31 is connected to the corresponding two first main gate lines 1.
  • the length of the first main gate line 1 is equal to the length of the second main gate line 4, and the diode strip is located on the metal wire network a for each sub-strip c on the diode strip
  • a bonding section 31 of the sub-strip c is pasted on a first main grid line 1 in the metal wire network a, and the other bonding section 31 of the sub-strip c is pasted in the metal wire network a
  • the one first main gate line 1 and the other first main gate line 1 are adjacent to each other, so that the sub-strip c is passed through the bonding sections 31 at both ends thereof.
  • the two first main gate lines 1 are connected.
  • the strip layer 2 further comprises a plurality of metal foils 22;
  • the two adjacent diodes 21 are connected by a metal foil 22, and the metal foil 22 includes a connecting portion 221, and the diode 21 is connected to the connecting portion 221, and the width of the connecting portion 221 is larger than the width of other portions of the metal foil 22.
  • the material of the metal foil 22 may be copper, iron, aluminum, copper alloy, iron alloy or aluminum alloy.
  • the thickness of the metal foil 22 may be greater than or equal to 0.3 mm and less than or equal to 0.8 mm.
  • the metal foil 22 may have a thickness of 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm, or 0.8 mm, or the like.
  • the diode strip b may further include a protective film 6 disposed on the other side of the strip bonding layer 3 opposite to the conductive layer 3.
  • the material of the protective film 6 may be an insulating material.
  • the protective film 6 has an insulating function.
  • the material of the protective film 6 may be polyethylene terephthalic plastic (PET), sarin resin or trinitrophenol (PC).
  • PET polyethylene terephthalic plastic
  • PC trinitrophenol
  • the thickness of the protective film 6 may be greater than or equal to 0.1 mm and less than or equal to 0.3 mm.
  • the thickness of the protective film 6 may be 0.1 mm, 0.2 mm or 0.3 mm or the like.
  • the bonding section 31 may be located intermediate the two adjacent diodes 21.
  • the bonding section 31 may be a conductive tape.
  • the conductive tape may have a thickness greater than or equal to 0.1 mm and less than or equal to 0.5 mm.
  • the conductive tape may have a thickness of 0.1 mm, 0.2 mm, 0.3 mm, 0.4 mm, or 0.5 mm, or the like.
  • the diode strip may further include a release paper 7 disposed on the bonding section 31.
  • the release paper 7 may be silicone paper, and the thickness of the release paper 7 may be greater than or equal to 0.5 mm and less than or equal to 1 mm.
  • the release paper 7 may have a thickness of 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm or 1 mm, or the like.
  • each bonding segment 31 of the bonding conductive layer 3 corresponds to a release paper 7, and the length of each bonding segment 31 may be equal to the length of its corresponding release paper 7, and the release paper 7 may Covered on its corresponding bonding section 31. or,
  • the length of the release paper 7 is equal to the length of the strip layer 2, and the release paper 7 covers one side of the entire strip layer 2 and the respective bonding sections 31 on the one side.
  • a groove for accommodating the diode 21 is formed inside the release paper 7.
  • a recess that can accommodate the diode 21 is formed to protect the diode 21.
  • the metal wire network layer structure can form a roll structure, which is provided with an insulating function protective film 6, a metal wire network a and a strip layer 1, and a bonded conductive layer in this order from top to bottom. 3. Peelable release paper 7.
  • the material of the protective film 6 having an insulating function may be a sarin resin having a thickness of 0.2 mm;
  • the material of the metal foil 22 in the diode strip b may be copper, and the metal foil 22 may have a thickness of 0.15 mm and a width of 0.2 mm.
  • the strip layer 2 of the diode strip b is formed by sequentially connecting a plurality of chip diodes 11 and metal foils 22, and each of the diodes 21 is embedded and soldered between the two metal foils 22, and the diodes 21 are oriented in the same polarity. Both ends of 21 are respectively connected to the first main gate line 1.
  • a main battery panel 8 is disposed between two adjacent first main gate lines 1.
  • the main battery panel 8 includes N sub-cell sheets 81 connected in series, and N is an integer greater than or equal to 1, adjacent.
  • the two sub-cells 81 are connected by a second main gate line 4, and one of the sub-strips c is connected to a first main gate line 1 and the other of the sub-strips c is bonded.
  • the metal wire network of the prefabricated diode in the form of a roll package is used for a solar photovoltaic module.
  • the hot spot effect of the battery chip cannot generate electricity, the current generated by the other battery cells flows out from the diode, so that the solar component continues to generate electricity, not because A problem occurs in a certain battery chip, and the power generation circuit is unreasonable.
  • Its main features are prefabricated diodes and package packages. Mainly used in the "roll-to-roll” production process, especially in the production process of "bus bar” and "bypass diode” in the flexible solar energy production process.
  • the application solves the problem that a single diode is difficult to be integrated into the chip during the production process of the photovoltaic module, which simplifies the production process and improves the production efficiency.
  • an embodiment of the present application provides a photovoltaic device comprising the layered structure of a metal wire network according to any of the above embodiments;
  • a main battery sheet 8 is disposed between two adjacent first main gate lines 1 in the metal wire network layer structure, and the main battery sheet 8 includes N series sub-cell sheets, and two adjacent sub-cell sheets 81 pass through The two main gate lines 4 are connected, and N is an integer greater than or equal to one.
  • an embodiment of the present application provides a method for manufacturing a metal wire network layer structure, where the method includes:
  • Step 401 Form a metal wire network a, the metal wire network a includes a plurality of first main gate lines 1, and a plurality of first main gate lines 1 are disposed in parallel with each other.
  • the length of the metal wire network a may be several meters, several tens of meters, several hundred meters or several kilometers, etc., so the metal wire network a can be wound into a metal wire network roll.
  • Step 402 Forming a diode strip b comprising a strip layer 2 and a bonding conductive layer 3 attached to one side of the strip layer 2, the bonding conductive layer 3 comprising a plurality of bonding segments 31, the bonding The segment 31 corresponds to a first main gate line 1; the strip layer 2 comprises a plurality of diodes 21, a junction of adjacent diodes 21 is bonded to a bonding segment 31, and a sub-strip c is formed between adjacent bonding segments.
  • the length of the diode strip b can be several meters, several tens of meters, several hundred meters or several kilometers, etc., so the diode strip b can be wound into a diode strip roll.
  • Step 403 The metal wire network a is laid on the workbench, and the diode strip b is laid on the metal wire network a.
  • the length of the workbench is usually several meters or tens of meters, etc.
  • the entire roll of metal wire network a can be directly laid at work.
  • the entire roll of diode strips b are laid on the projections 11 of each of the first main gate lines 1 of the metal wire network a, or, referring to Fig. 2, the entire roll of diode strips b Tiled on the metal wire network a.
  • a part of the metal wire network a can be pulled out from the metal wire network roll and laid on the workbench, from the diode strip. Pulling out a part of the diode strip b in the tape roll is laid on the photovoltaic module, that is, referring to FIG. 1, the diode strip b may be laid on the protruding portion 11 of the first main gate line 1 of the metal wire network a, or Referring to Figure 2, the diode strips b are laid flat on the metal wire network a.
  • Step 404 Connect each sub-strip through the bonding segments at both ends thereof to the corresponding two first main gate lines, and the two first main gate lines are adjacent.
  • the metal wire network layer structure on the workbench can be rolled up, and then rolled from the metal wire network. A part of the metal wire network a is pulled out and a part of the diode strip b is pulled out from the diode strip roll, and is fabricated into a metal wire network layered structure in the manner of 401 to 403 above.
  • the diode strip can be placed on the metal wire network, and for any diode on the diode strip, a bonding segment connected to one end of the diode is pasted on the first wire of the metal wire network. On the gate line, a bonding segment connected to the other end of the diode is pasted on another first main gate line on the metal wire network, and the one first main gate line is adjacent to the other first main gate line.

Abstract

本申请公开了一种光伏装置、金属导线网络层状结构及其制造方法，所述结构包括金属导线网络和二极管条带；所述金属导电网络包括若干第一主栅线，所述若干第一主栅线相互平行设置；所述二极管条带包括条带层和贴合在所述条带层一侧的粘结导电层，所述粘结导电层包括若干粘结段，所述粘结段对应一第一主栅线；所述条带层包括若干二极管，相邻二极管的连接处粘结一粘结段，相邻粘结段之间形成一子条带，每一子条带通过其两端的粘结段与对应的两个第一主栅线连接，所述两个第一主栅线相邻。该结构用于柔性太阳能电池板的组装电连接，适用于卷对卷工艺的电池板与线路和元器件的一体成型，提高了生产效率和生产的稳定性。

Description

一种光伏装置、金属导线网络层状结构及其制造方法
本申请要求于2017年5月16日提交中国国家知识产权局、申请号为201710341265.1、发明名称为“一种带有电子元器件的金属导线网络层状结构”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及太阳能电池组件技术领域，特别是涉及一种光伏装置、金属导线网络层状结构及其制造方法。
背景技术
随着人们生活的发展，光伏组件的应用越来越广泛。在实际应用中，光伏组件由若干片电池片串联组成。在使用过程中，可能出现一个或一组电池片发生热斑效应，导致该一个或一组电池片所在的局部区域烧毁，以至于形成暗斑、焊点融化、封装材料老化、玻璃炸裂和/或焊带腐蚀等永久性破坏，给光伏组件的安全性和可靠性造成极大的隐患。
为了提高光伏组件的安全性和可靠性，在生产出光伏组件后，给光伏组件中的每个电池片并联一个旁路二极管，这样当光伏组件上的某一个电池片出现热斑效应时，该电池片两端的电流值增加，使得与该电池片并联的旁路二极管导通，通过该旁路二极管将该电池片的两端短路，停止该电池片继续发生热斑效应，从而可最大限度的减小热斑效应的影响。
目前在给光伏组件中的每个电流片并联一个旁路二极管时，使用一根导线将该旁路二极管的一端与该电池片的一端连接，使用另一根导线将该旁路二极管的另一端与该电池片的另一端连接，这种生产方式效率低，消耗大量的人力成本，不能满足目前太阳能光伏组件连续化生产的要求。
发明内容
本申请的目的在于提供一种光伏装置、金属导线网络层状结构及其制造方法，金属导线网络与太阳能电池板进行复合连接可以卷成卷，用于柔性太阳能生产过程中卷对卷工艺，将该金属导线网络与太阳能电池板进行复合连接。
第一方面，本申请提供了一种金属导线网络层状结构，包括：
金属导线网络和二极管条带；
所述金属导电网络包括若干第一主栅线，所述若干第一主栅线相互平行设置；
所述二极管条带包括条带层和贴合在所述条带层一侧的粘结导电层，所述粘结导电层包括若干粘结段，所述粘结段对应一第一主栅线；
所述条带层包括若干二极管，相邻二极管的连接处粘结一粘结段，相邻粘结段之间形成一子条带，每一子条带通过其两端的粘结段与对应的两个第一主栅线连接，所述两个第一主栅线相邻。
可选的，所述相邻的两个第一主栅线之间包括M个第二主栅线，所述M个第二主栅线相互平行设置，所述第一主栅线的长度大于所述第二主栅线的长度或所述第一主栅线的长度等于所述第二主栅线的长度，M为大于或等于1的整数。
可选的，所述条带层还包括多个金属箔片；
相邻两个二极管之间通过所述金属箔片连接，所述金属箔片包括连接部，所述二极管与所述连接部连接，所述连接部的宽度大于金属箔片其他部分的宽度。
可选的，金属导线网络还包括：多根相互平行设置的细栅线，多根第一主栅线中的每根第一主栅线与多根细栅线中的每根细栅线垂直。
可选的，还包括：
保护膜，保护膜设置在所述条带层的另一侧面上。
可选的，所述保护膜的材料为绝缘材料，其为聚对苯二甲酸类塑料、沙林树脂或三硝基苯酚。
可选的，所述保护膜的厚度大于或等于0.1毫米且小于或等于0.3毫米。
可选的，所述粘结段为导电胶带。
可选的，所述导电胶带位于相邻的两个二极管之间的中间位置，所述导电胶带的厚度大于或等于0.1毫米且小于或等于0.5毫米。
可选的，还包括：
离型纸，所述离型纸设置在所述粘结段上。
可选的，所述离型纸为硅油纸，所述离型纸的厚度大于或等于0.5毫米且小于或等于1毫米。
第二方面，本申请提供了一种光伏装置，所述光伏装置包括第一方面或第一方面中的任一种可选的所述的金属导线网络层状结构；
在所述金属导线网络层状结构中的相邻两根第一主栅线之间设有主电池片，所述主电池片包括N个串联的子电池片，相邻两个子电池片通过第二主栅线连接，N为大于或等于1的整数。
第三方面，本申请提供了一种金属导线网络层状结构的制造方法，所述方法包括：
形成金属导线网络，所述金属导线网络包括若干第一主栅线，所述若干第一主栅线相互平行设置；
形成二极管条带，所述二极管条带包括条带层和贴合在所述条带层一侧的粘结导电层，所述粘结导电层包括若干粘结段，所述粘结段对应一第一主栅线；所述条带层包括若干二极管，相邻二极管的连接处粘结一粘结段，相邻粘结段之间形成一子条带；
将每一子条带通过其两端的粘结段与对应的两个第一主栅线连接，所述两个第一主栅线相邻。
可选的，所述将每一子条带通过其两端的粘结段与对应的两个第一主栅线连接之后，还包括：
在金属导线网络中相邻的两个第一主栅线之间设置主电池片，所述主电池 片包括N个串联的子电池片，相邻两个子电池片通过第二主栅线连接，N为大于或等于1的整数。
本申请提供一种金属导线网络层状结构，该结构可用于柔性太阳能电池板的组装电连接，适用于卷对卷工艺的电池板与线路和元器件的一体成型，提高了生产效率和生产的稳定性。本申请的卷状封装形式的金属导线网络层状结构用于太阳能光伏组件，特别是柔性光伏组件的生产制作过程中，起到旁路二极管的作用，当电池片出现热斑效应不能发电时，让其它电池片所产生的电流从二极管流出，使太阳能组件继续发电，不会因为某一片电池片出现问题而产生发电电路不通的情况。其主要特点是含有二极管、卷装封装。主要用于“卷到卷”生产工艺中，尤其是在柔性太阳能生产过程中的“汇流栅线”、“旁路二极管”的生产工艺。本申请解决了光伏组件生产过程中，单个二极管难以并入芯片之间的问题，简化了生产工艺，提升了生产效率。
附图说明
图1是本申请实施例提供了一种金属导线网络层状结构示意图。
图2是本申请实施例提供了另一种金属导线网络层状结构示意图。
图3是本申请实施例提供了一种二极管条带的结构示意图。
图4是本申请实施例提供了一种光伏装置的结构示意图。
图5是本申请实施例提供了一种光伏装置的结构示意图。
图6是本申请实施例提供了一种金属导线网络层状结构的制造方法流程图。
图7是本申请实施例提供的平铺光伏组件和二极管条带的示意图。
具体实施方式
为使本申请的目的、技术方案及优点更加清楚、明确，以下参照附图并举实施例对本申请作进一步阐述。
参见图1、图2和图3，本申请实施例提供了一种金属导线网络层状结构，包括：金属导线网络a和二极管条带b；
金属导电网络a包括若干第一主栅线1，若干第一主栅线1相互平行设置；
二极管条带b包括条带层2和贴合在条带层2一侧的粘结导电层3，粘结 导电层3包括若干粘结段31，粘结段31对应一第一主栅线1；
条带层2包括若干二极管21，相邻二极管21的连接处粘结一粘结段31，相邻粘结段31之间形成一子条带c，每一子条带c通过其两端的粘结段31与对应的两个第一主栅线1连接，该两个第一主栅线1相邻。
参见图1和2，每个子条带c包括两个相邻的粘结段31和位于该两个相邻的两个粘结段31之间的二极管21。
可选的，该若干第一主栅线1等间隔设置。
可选的，相邻的两个第一主栅线1之间包括M个第二主栅线4，M个第二主栅线4相互平行设置，第一主栅线1的长度可以大于第二主栅线4的长度或第一主栅线1的长度等于第二主栅线4的长度，M为大于或等于0的整数。
所以该金属导电网络a包括第一主栅线1和第二主栅线4两种主栅线，且金属导电网络a中的各主栅线相互平行且等间隔设置。
当M为0时，即相邻的两个第一主栅线1之间不存在第二主栅线4。
可选的，参见图1或2，金属导电网络a包括若干相互平行设置的细栅线5，每个细栅线5与每个第一主栅线1和每个第二主栅线4垂直。
可选的，子条带c通过其两端的粘结段31与对应的两个第一主栅线1连接的方式有如下两种方式，分别为：
第一种方式，第一主栅线1的长度大于第二主栅线4的长度，第一主栅线1包括伸出金属导线网络a边界的突出部11；对于每个子条带c，该子条带c中的一个粘结段31粘贴在金属导线网络a中的一个第一主栅线1的突出部11上，该子条带c中的另一个粘结段31粘贴在金属导线网络a中的另一个第一主栅线1的突出部11上，该一个第一主栅线1和该另一个第一主栅线1相邻，如此实现将该子条带c通过其两端的粘结段31与对应的两个第一主栅线1连接。
参见图2，在第二种方式中，第一主栅线1的长度等于第二主栅线4的长度，二极管条带位于金属导线网络a上，对于二极管条带上的每个子条带c，该子条带c中的一个粘结段31粘贴在金属导线网络a中的一个第一主栅线1上，该子条带c中的另一个粘结段31粘贴在金属导线网络a中的另一个第一主栅线1上，该一个第一主栅线1和该另一个第一主栅线1相邻，如此实现将该子条带c通过其两端的粘结段31与对应的两个第一主栅线1连接。
可选的，参见图1和2，条带层2还包括多个金属箔片22；
相邻两个二极管21之间通过金属箔片22连接，金属箔片22包括连接部221，二极管21与连接部221连接，连接部221的宽度大于该金属箔片22其他部分的宽度。
可选的，金属箔片22的材料可以为铜、铁、铝、铜合金、铁合金或铝合金等材料。
可选的，金属箔片22的厚度可以大于或等于0.3毫米且小于或等于0.8毫米。例如，金属箔片22的厚度可以为0.3毫米、0.4毫米、0.5毫米、0.6毫米、0.7毫米或0.8毫米等。
参见图3，该二极管条带b还可以包括：保护膜6，保护膜6设置在条带层2的相对粘结导电层3的另一侧面上。
可选的，保护膜6的材料可以为绝缘材料。保护膜6具有绝缘功能。
可选的，保护膜6的材料可以为聚对苯二甲酸类塑料(Polyethylene terephthclcte，PET)、沙林树脂或三硝基苯酚(PC)等。
可选的，保护膜6的厚度可以大于或等于0.1毫米且小于或等于0.3毫米。例如，保护膜6的厚度可以为0.1毫米、0.2毫米或0.3毫米等。
可选的，参见图1和2，粘结段31可以位于相邻的两个二极管21之间的中间位置。
可选的，粘结段31可以为导电胶带。
可选的，导电胶带的厚度可以大于或等于0.1毫米且小于或等于0.5毫米。例如，导电胶带的厚度可以为0.1毫米、0.2毫米、0.3毫米、0.4毫米或0.5毫米等。
可选的，参见图3，该二极管条带还可以包括离型纸7，离型纸7设置在粘结段31上。
可选的，离型纸7可以为硅油纸，离型纸7的厚度可以大于或等于0.5毫米且小于或等于1毫米。例如，离型纸7的厚度可以为0.5毫米、0.6毫米、0.7毫米、0.8毫米、0.9毫米或1毫米等。
可选的，粘结导电层3中的每个粘结段31对应一个离型纸7，且每个粘结段31的长度可以等于其对应的离型纸7的长度，离型纸7可以覆盖在其对应的粘结段31上。或者，
离型纸7的长度等于条带层2的长度，离型纸7覆盖整个条带层2的一侧和位于该一侧上的各粘结段31。
可选的，在离型纸7的长度等于条带层2的长度的情况下，离型纸7内部形成可容纳二极管21的凹槽。当外部压力发生形变时，形成可容纳二极管21的凹槽，以对二极管21产生保护作用。
接下来以一个具体实施例，来描述上述金属导线网络层状结构。参见图1，该金属导线网络层状结构能够形成卷状结构，该层状封装结构由上至下依次设置有绝缘功能的保护膜6、金属导线网络a和条带层1、粘结导电层3、可剥离离型纸7。
具有绝缘功能的保护膜6的材料可以为沙林树脂，其厚度为0.2mm；
二极管条带b中的金属箔片22的材料可以为铜，金属箔片22的厚度可以为0.15mm，宽度可以为0.2mm。
二极管条带b的条带层2由多个片状二极管11和金属箔片22依次串联而成，每一个二极管21嵌入焊接在两片金属箔片22之间，二极管21极性朝向一致，二极管21的两端分别与第一主栅线1连接。
参见图4和图5，相邻两个第一主栅线1之间设置主电池片8，主电池片8包括N个串联的子电池片81，N为大于或等于1的整数，相邻的两个子电池片81通过第二主栅线4连接，将子条带c中的一个粘结段31与一个第一主栅线1连接，将该子条带c中的另一个粘结段31与另一个第一主栅线1连接，该一个第一主栅线1和该另一个第一主栅线1相邻，实现该子条带c中的一个二极管21与该主电池片8并联；当该主电池片8中的某个电池片出现热斑效应或者其他故障时，该主电池片8的电阻变大，该二极管21导通，该主电池片8两端的电流从该二极管21流过，从而绕过出现故障的该主电池片8，保护整个发电电路。
该卷状封装形式的预制二极管的金属导线网络用于太阳能光伏组件，当电池片出现热斑效应不能发电时，让其它电池片所产生的电流从二极管流出，使太阳能组件继续发电，不会因为某一片电池片出现问题而产生发电电路不通的情况。其主要特点是含有预制二极管、卷装封装。主要用于“卷到卷”生产工艺中，尤其是在柔性太阳能生产过程中的“汇流栅线”、“旁路二极管”的生产工艺。本申请解决了光伏组件生产过程中，单个二极管难以并入芯片之间的问题，简化了生产工艺，提升了生产效率。
参见图4和5，本申请实施例提供了一种光伏装置，包括上述任一实施例 所述的金属导线网络层状结构；
在金属导线网络层状结构中的相邻两根第一主栅线1之间设有主电池片8，主电池片8包括N个串联的子电池片，相邻两个子电池片81通过第二主栅线4连接，N为大于或等于1的整数。
参见图6，本申请实施例提供了一种金属导线网络层状结构的制造方法，所述方法包括：
步骤401：形成金属导线网络a，金属导线网络a包括若干第一主栅线1，若干第一主栅线1相互平行设置。
其中，金属导线网络a的长度可以是几米、几十米，几百米或几千米等，所以金属导线网络a可以卷成金属导线网络卷。
步骤402：形成二极管条带b，二极管条带b包括条带层2和贴合在条带层2一侧的粘结导电层3，粘结导电层3包括若干粘结段31，该粘结段31对应一第一主栅线1；条带层2包括若干二极管21，相邻二极管21的连接处粘结一粘结段31，相邻粘结段之间形成一子条带c。
其中，二极管条带b的长度可以是几米、几十米，几百米或几千米等，所以二极管条带b可以卷成二极管条带卷。
步骤403：将金属导线网络a平铺在工作台上，将二极管条带b平铺在金属导线网络a上。
工作台的长度通常为几米或几十米等，当二极管条带b的长度和金属导线网络a的长度均小于或等于工作台的长度时，可以直接将整卷金属导线网络a平铺在工作台上；然后参见图1，将整卷二极管条带b平铺在金属导线网络a的每个第一主栅线1的突出部11上，或者，参见图2，将整卷二极管条带b平铺在金属导线网络a上。
参见图7，当二极管条带b的长度和金属导线网络a的长度均大于工作台的长度时，可以从金属导线网络卷中拉出一部分金属导线网络a平铺在工作台上，从二极管条带卷中拉出一部分二极管条带b平铺在光伏组件上，即参见图1，可以将二极管条带b平铺在金属导线网络a的第一主栅线1的突出部11上，或者，参见图2，将二极管条带b平铺在金属导线网络a上。
步骤404：将每一子条带通过其两端的粘结段与对应的两个第一主栅线连接，两个第一主栅线相邻。
可选的，当将工作台上的二极管条带b与金属导线网络a制造成金属导线网络层状结构后，可以卷起工作台上的金属导线网络层状结构，然后再从金属导线网络卷中拉出一部分金属导线网络a和从二极管条带卷中拉出一部分二极管条带b，并按上述401至403的方式制造成金属导线网络层状结构。
在本申请实施例中，可以将二极管条带放置在金属导线网络上，对于二极管条带上的任一个二极管，将与该二极管一端相连的粘结段粘贴在金属导线网络上的一个第一主栅线上，将与该二极管另一端相连的粘结段粘贴在金属导线网络上的另一个第一主栅线上，该一个第一主栅线和该另一个第一主栅线相邻，从而可以实现连续化生成，通过连续化生成可以提高生成效率，减小人力成本的消耗。
以上实施例仅用于对本申请进行具体说明，其并不对本申请的保护范围起到任何限定作用，本申请的保护范围由权利要求确定。根据本领域的公知技术和本申请所公开的技术方案，可以推导或联想出许多变型方案，所有这些变型方案，也应认为是本申请的保护范围。

Claims (14)

  1. 一种金属导线网络层状结构，其特征在于，包括：
    金属导线网络和二极管条带；
    所述金属导电网络包括若干第一主栅线，所述若干第一主栅线相互平行设置；
    所述二极管条带包括条带层和贴合在所述条带层一侧的粘结导电层，所述粘结导电层包括若干粘结段，所述粘结段对应一第一主栅线；
    所述条带层包括若干二极管，相邻二极管的连接处粘结一粘结段，相邻粘结段之间形成一子条带，每一子条带通过其两端的粘结段与对应的两个第一主栅线连接，所述两个第一主栅线相邻。
  2. 如权利要求1所述的金属导线网络层状结构，其特征在于，所述相邻的两个第一主栅线之间包括M个第二主栅线，所述M个第二主栅线相互平行设置，所述第一主栅线的长度大于所述第二主栅线的长度或所述第一主栅线的长度等于所述第二主栅线的长度，M为大于或等于1的整数。
  3. 如权利要求1所述的金属导线网络层状结构，其特征在于，所述条带层还包括多个金属箔片；
    相邻两个二极管之间通过所述金属箔片连接，所述金属箔片包括连接部，所述二极管与所述连接部连接，所述连接部的宽度大于金属箔片其他部分的宽度。
  4. 如权利要求1-3中任一项所述的金属导线网络层状结构，其特征在于，金属导线网络还包括：多根相互平行设置的细栅线，多根第一主栅线中的每根第一主栅线与多根细栅线中的每根细栅线垂直。
  5. 如权利要求1-3中任一项所述的金属导线网络层状结构，其特征在于，还包括：
    保护膜，保护膜设置在所述条带层的另一侧面上。
  6. 如权利要求5所述的金属导线网络层状结构，其特征在于，所述保护膜的材料为绝缘材料，其为聚对苯二甲酸类塑料、沙林树脂或三硝基苯酚。
  7. 如权利要求6所述的金属导线网络层状结构，其特征在于，所述保护膜的厚度大于或等于0.1毫米且小于或等于0.3毫米。
  8. 如权利要求1所述的金属导线网络层状结构，其特征在于，所述粘结段为导电胶带。
  9. 如权利要求8所述的金属导线网络层状结构，其特征在于，所述导电胶带位于相邻的两个二极管之间的中间位置，所述导电胶带的厚度大于或等于0.1毫米且小于或等于0.5毫米。
  10. 如权利要求1所述的金属导线网络层状结构，其特征在于，还包括：
    离型纸，所述离型纸设置在所述粘结段上。
  11. 如权利要求10所述的金属导线网络层状结构，其特征在于，所述离型纸为硅油纸，所述离型纸的厚度大于或等于0.5毫米且小于或等于1毫米。
  12. 一种光伏装置，其特征在于，所述光伏装置包括如权利要求1至11任一项权利要求所述的金属导线网络层状结构；
    在所述金属导线网络层状结构中的相邻两根第一主栅线之间设有主电池片，所述主电池片包括N个串联的子电池片，相邻两个子电池片通过第二主栅线连接，N为大于或等于1的整数。
  13. 一种金属导线网络层状结构的制造方法，其特征在于，所述方法包括：
    形成金属导线网络，所述金属导线网络包括若干第一主栅线，所述若干第一主栅线相互平行设置；
    形成二极管条带，所述二极管条带包括条带层和贴合在所述条带层一侧的粘结导电层，所述粘结导电层包括若干粘结段，所述粘结段对应一第一主栅线；所述条带层包括若干二极管，相邻二极管的连接处粘结一粘结段，相邻粘结段 之间形成一子条带；
    将每一子条带通过其两端的粘结段与对应的两个第一主栅线连接，所述两个第一主栅线相邻。
  14. 如权利要求13所述的方法，其特征在于，所述将每一子条带通过其两端的粘结段与对应的两个第一主栅线连接之后，还包括：
    在金属导线网络中相邻的两个第一主栅线之间设置主电池片，所述主电池片包括N个串联的子电池片，相邻两个子电池片通过第二主栅线连接，N为大于或等于1的整数。
PCT/CN2018/087189 2017-05-16 2018-05-16 一种光伏装置、金属导线网络层状结构及其制造方法 WO2018210284A1 (zh)

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CN206961840U (zh) * 2017-05-16 2018-02-02 北京汉能薄膜发电技术有限公司 金属导线网络层状结构

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CN103489945A (zh) * 2012-06-13 2014-01-01 金坛正信光伏电子有限公司 汇流聚能型网状旁路太阳能电池
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