WO2018210102A1 - 用于激光退火工艺的工艺箱和激光退火装置 - Google Patents

用于激光退火工艺的工艺箱和激光退火装置 Download PDF

Info

Publication number
WO2018210102A1
WO2018210102A1 PCT/CN2018/084035 CN2018084035W WO2018210102A1 WO 2018210102 A1 WO2018210102 A1 WO 2018210102A1 CN 2018084035 W CN2018084035 W CN 2018084035W WO 2018210102 A1 WO2018210102 A1 WO 2018210102A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
area
tank
process box
box according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/084035
Other languages
English (en)
French (fr)
Inventor
王景帅
郝永志
吴嘉禄
李喆镐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Ordos Yuansheng Optoelectronics Co Ltd filed Critical BOE Technology Group Co Ltd
Publication of WO2018210102A1 publication Critical patent/WO2018210102A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof

Definitions

  • the present disclosure relates to the field of production of display products, and in particular to a process chamber and a laser annealing device for a laser annealing process
  • low temperature polysilicon transistor (LTPS TFT) technology Compared with amorphous silicon thin film transistors (a-Si TFTs), low temperature polysilicon transistor (LTPS TFT) technology has many advantages, such as high mobility and can be prepared at a lower temperature and substrate. Flexible choice, low preparation costs, etc. Since the excellent characteristics of the low-temperature polysilicon thin film transistor have obvious advantages in the display, it has become an important material in display production.
  • a-Si TFTs amorphous silicon thin film transistors
  • LTPS TFT low temperature polysilicon transistor
  • the present disclosure provides a process tank for a laser annealing process, including a tank body, the tank body forming an accommodation space, the tank body being provided with a light injection zone, a light exit zone and an air inlet, wherein the tank A portion of the body located in the light exiting region is formed of a light transmissive material and is provided with a plurality of air outlets.
  • the plurality of air outlets located in the light exiting region are arranged in a plurality of columns, each column having a direction along a length of the housing, and each of the columns includes a plurality of the air outlets.
  • the spacing between any adjacent two listed ports is greater than the spacing between adjacent two outlets in the same column.
  • the spacing between adjacent two air outlets in the same column is about 0.3 to 2 times the diameter of the air outlet.
  • the air outlet has a caliber of about 1 mm to 3 mm.
  • the total outlet area of all of the air outlets is between about 75% and 90% of the area of the light exit area.
  • the light transmissive material is Al 2 O 3 .
  • the air outlets in one of the plurality of columns and the air outlets in adjacent columns are aligned or staggered.
  • the outlet gas is circular.
  • the light injecting area is located at the top of the box, the light exiting area is located at the bottom of the box, and the light injecting area and the light emitting area are oppositely disposed.
  • the light injecting area is an opening disposed on the case.
  • the air inlets are disposed on two side walls in the length direction of the case.
  • the process tank further includes a cooling line disposed in the receiving space for containing a cooling fluid.
  • the cooling circuit is a bent structure having a plurality of bends.
  • a cooling structure is further disposed on the exterior of the casing for cooling the substrate located on the light exiting side of the casing.
  • the refrigeration structure includes a refrigeration box disposed outside the tank, a refrigerant disposed in the refrigeration box, and a pressure adjustment unit for adjusting air pressure in the refrigeration box, the refrigeration box A heat conducting layer is provided on one side for facing the substrate.
  • the present disclosure also provides a laser annealing apparatus including a gas source, a laser source, and a process tank.
  • the process box is the above process box provided by the present disclosure.
  • the gas source is in communication with an air inlet on the housing, and the laser source illuminates a laser toward a light incident region on the housing.
  • FIG. 1 is a schematic view showing a laser annealing process using a known process chamber
  • Figure 2 is a bottom plan view of the process box of Figure 1;
  • FIG. 3 is a schematic view of a laser annealing process performed by using the process box provided by the present disclosure
  • Figure 4 is a bottom plan view of the process box of Figure 3;
  • Fig. 5 is a schematic view showing a state in which a substrate is cooled by a cooling structure.
  • Reference numerals 10, known process box; 11, opening; 20, substrate; 30, box; 31, air inlet; 32, light injection area; 33, light exit area; 331, air outlet; Cooling line; 341, inlet of cooling line; 342, outlet of cooling line; 35, baffle; 36, concentration detector; 37, refrigeration box; 38, heat conducting layer; 391, motor; 392, piston; ,Temperature Sensor.
  • FIG. 1 is a schematic illustration of a laser annealing process using a known process chamber.
  • Figure 2 is a bottom plan view of the process box of Figure 1. As shown in FIG. 1 and FIG. 2, the top and bottom of the process box 10 are provided with openings 11, and the side walls of the two sides are provided with air inlets. During the process, the laser light emitted by the laser source is shot from the top opening 11 of the process box.
  • the process box is inserted into the substrate 20 from the bottom opening 11 and the substrate 20 is moved relative to the process box 10 so that the laser can scan the entire substrate 20.
  • nitrogen gas enters the process tank 10 from the gas inlet and is blown from the bottom opening 11 toward the substrate 20, so that the amorphous silicon on the substrate 20 is crystallized under a nitrogen atmosphere. Since the opening 11 is a completely open narrow opening, when nitrogen enters the process box 10 and is blown out from the bottom opening, there is a phenomenon that the middle air flow is strong and the air flow at both ends is weak, thereby causing uneven crystallization and generating a mother pull. (mura) phenomenon.
  • the present disclosure proposes a process chamber and a laser annealing apparatus for a laser annealing process to make the gas distribution of the process box more uniform.
  • a process tank for a laser annealing process is provided, which is specifically an excimer laser annealing process.
  • the process box includes a case 30, and an interior of the case 30 forms an accommodation space.
  • a light incident region 32 and a light exiting region 33 are disposed on the casing 30.
  • the casing 30 is also provided with an air inlet 31.
  • the portion of the casing 30 located at the light exiting area 33 is formed of a light transmissive material, i.e., is transparent to laser light for ELA.
  • a plurality of air outlets 331 are provided in the portion.
  • the portion of the casing 30 located in the light exiting area 33 is light transmissive, a plurality of air outlets 331 are provided in the portion. Therefore, when the amorphous silicon film layer on the substrate 20 under the process tank 30 is subjected to a laser annealing process, the laser light can be emitted from the large light emitting region 33, and the gas (for example, nitrogen gas) can be blown only from the gas outlet port 331. The gas is restricted by the gas outlet 331. Compared with the manner in which the gas is blown out from the completely open slit opening, the present disclosure can reduce the distribution of the gas under the process box by setting the distribution of the gas outlet 331 to distribute the gas more uniformly. A mura phenomenon occurs on the polysilicon film layer to improve the quality of the film layer.
  • the gas for example, nitrogen gas
  • the light incident area 32 is located at the top of the casing 30, and the light exiting area 33 is located at the bottom of the casing 30, and the light incident area 32 and the light exiting area 33 are disposed opposite each other.
  • the light injection zone 32 may be an opening disposed in the case 30.
  • the side walls of the casing 30 along both sides in the longitudinal direction thereof are provided with intake holes 31.
  • the plurality of air outlets 331 located in the light exiting area 33 are arranged in a plurality of columns, and each of the columns includes a plurality of air outlets 331.
  • Each of the listed ports 331 may be arranged along the length direction of the case 30. For example, the spacing between any two adjacent gas ports 331 is greater than the spacing between adjacent two gas outlets 331 in the same column.
  • the spacing between the adjacent two listed ports 331 can be regarded as the closest distance between the two listed ports, and the spacing between adjacent two outlets 331 in the same column can be regarded as between the two outlets 331. The closest distance.
  • the intensity of the laser light received on the substrate 20 is caused to slightly gradient in a direction perpendicular to the column extending direction. This intensity gradient contributes to the lateral growth of the grains in a direction perpendicular to the direction in which the columns extend.
  • the two listed ports 331 may be one-to-one aligned.
  • the nth air outlet in the first column is aligned with the nth air outlet 331 in the second column.
  • the air outlets in the two listed ports 331 are staggered.
  • the nth air outlet 331 in the first column corresponds to the position between the n-1th and n+1th air outlets 331 in the second column.
  • the spacing between adjacent two air outlets 331 in the same column may be about 0.3 to 2 times the diameter of the air outlet 331.
  • the diameter of the air outlet 331 is approximately 1 mm to 3 mm.
  • the air outlet 331 is, for example, circular, and the diameter of the air outlet 331 is the diameter of the air outlet.
  • the air outlet 331 may have a rectangular shape or other shape, and the diameter of the air outlet 331 is a dimension in any direction on the plane of the air outlet 331.
  • the total outlet area of all the air outlets 331 accounts for about 75% to 90% of the area of the light exiting area 33, for example, more than 80%, to facilitate the blowing of the gas.
  • the portion of the casing 30 located in the light exiting region 33 is made of Al 2 O 3 , so that the portion of the light exiting region 33 where the air outlet 331 is not provided has a high transparency, does not affect the emission of light, and is more resistant to high temperatures and prolongs the process. The life of the box.
  • the process tank of the present disclosure further includes a cooling line 34 disposed in the accommodating space.
  • the cooling line 34 is for accommodating a cooling fluid such as a coolant, thereby lowering the temperature inside the tank 30 and preventing thermal effect accumulation.
  • the cooling duct 34 is a bent structure having a plurality of bends, and can form a "bow" shape (as shown in FIG. 3) or a "W" shape structure, thereby increasing the cooling area and improving the cooling effect.
  • the inlet 341 and the outlet 342 of the cooling pipe 34 may be respectively disposed on the side walls of one side of the casing 30 in the width direction thereof.
  • the refrigerating structure may specifically include a refrigerating tank 37 disposed outside the casing 30, a refrigerant disposed in the refrigerating tank 37, and a pressure adjusting unit for adjusting the air pressure in the refrigerating tank 37.
  • a heat conducting layer 38 is provided on a side of the refrigeration box 37 for facing the substrate 20.
  • the pressure regulating unit may include a piston 392 disposed within the refrigeration box 37 and a motor 391 that moves the piston 392.
  • the refrigeration structure can also take other forms.
  • the relative movement direction of the substrate 20 and the process tank 30 and the relative arrangement position between the refrigeration structure and the casing 20 are related. As shown in Fig. 4, the refrigeration structure is disposed on the right side of the casing 30, and the substrate 20 is relatively moved with the casing 30 in the left-to-right direction in Fig. 4 during the process.
  • a temperature sensor 393 may be disposed outside the refrigeration box 37 of the refrigeration structure to monitor the ambient temperature at any time, thereby adjusting the cooling temperature of the refrigeration structure, and effectively cooling the substrate 20.
  • the process tank may also include a plurality of baffles 35 disposed within the tank 30 such that nitrogen is more evenly distributed within the tank 30.
  • a concentration detector 36 is also disposed in the casing 30 to detect the gas concentration in the tank 30.
  • a laser annealing apparatus including a gas source, a laser source, and the above-described process tank, the gas source being in communication with an air inlet 31 on the casing 30, the laser source being directed toward the casing 30 The light is incident on the area to illuminate the laser.
  • the gas source is a nitrogen source.
  • the above is a description of the process box and the laser annealing apparatus for the laser annealing process provided by the present disclosure. It can be seen that the light exiting area at the bottom of the process box is provided with an air outlet, so that the gas distribution of the blown gas can be more uniform.
  • a cooling pipe is arranged in the tank, so that the temperature inside the box can be lowered to prevent thermal effect accumulation; in addition, a cooling structure is arranged outside the box, so that the polysilicon film of the conversion layer can be The layer is rapidly cooled.
  • the laser annealing device adopts the above process box, when the amorphous silicon film layer on the substrate is laser annealed by the laser annealing process to be converted into a polysilicon film layer, the quality of the amorphous silicon film layer can be improved.

Landscapes

  • Recrystallisation Techniques (AREA)

Abstract

本公开提供一种用于激光退火工艺的工艺箱，包括箱体，所述箱体内部形成容纳空间，所述箱体设置有光线射入区、光线射出区和进气口，其中所述箱体的位于所述光线射出区的部分由透光材料形成并且设置有多个出气口。本公开还提供一种激光退火装置。

Description

用于激光退火工艺的工艺箱和激光退火装置
相关专利申请
本申请主张于2017年5月15日提交的中国专利申请No.201720534489.X的优先权，其全部内容通过引用结合于此。
技术领域
本公开涉及显示产品的制作领域，具体涉及用于激光退火工艺的工艺箱和激光退火装置
背景技术
与非晶硅薄膜晶体管(a-Si TFT)相比，低温多晶硅薄膜晶体管(Low Temperature Poly TFT，LTPS TFT)技术具备诸多优点，如迁移率很高，同时可以在较低温度条件下制备、基底选择灵活、制备成本较低等。由于低温多晶硅薄膜晶体管的优良特性在显示器中具备明显优势，因此已经成为显示生产中的重要材料。
本领域中期望进一步提高多晶硅膜层质量。
发明内容
本公开提供一种用于激光退火工艺的工艺箱，包括箱体，所述箱体内部形成容纳空间，所述箱体设置有光线射入区、光线射出区和进气口，其中所述箱体的位于所述光线射出区的部分由透光材料形成并且设置有多个出气口。
在一个或多个实施例中，位于光线射出区的多个出气口排列为多列，每列的方向为沿所述箱体的长度方向，并且每列包括多个所述出气口。
在一个或多个实施例中，任意相邻两列出气口之间的间距大于同一列中相邻两个出气口之间的间距。
在一个或多个实施例中，同一列中相邻两个出气口之间的间距为出气口的口径的大约0.3～2倍。
在一个或多个实施例中，所述出气口的口径为大约1mm～3mm。
在一个或多个实施例中，所有出气口的出口总面积占所述光线射 出区面积的大约75％～90％。
在一个或多个实施例中，所述透光材料为Al 2O 3。
在一个或多个实施例中，所述多列其中一列中的所述出气口和相邻列中的所述出气口对齐或交错设置。
在一个或多个实施例中，所述出口气为圆形。
在一个或多个实施例中，所述光线射入区位于所述箱体顶部，所述光线射出区位于箱体底部，并且所述光线射入区和所述光线射出区相对设置。
在一个或多个实施例中，所述光线射入区为设置在所述箱体上的开口。
在一个或多个实施例中，所述进气口布置在所述箱体的长度方向上的两个侧壁。
在一个或多个实施例中，所述工艺箱还包括设置在所述容纳空间中的冷却管路，所述冷却管路用于容纳冷却流体。
在一个或多个实施例中，所述冷却管路为具有多处弯折的弯折结构。
在一个或多个实施例中，所述箱体外部还设置有制冷结构，用于对位于所述箱体出光侧的基板进行冷却。
在一个或多个实施例中，所述制冷结构包括设置在所述箱体外部的制冷箱、设置在制冷箱内的制冷剂、用于调节制冷箱内气压的压力调节单元，所述制冷箱的用于朝向基板的一侧设置有导热层。
相应地，本公开还提供一种激光退火装置，包括气体源、激光源和工艺箱。所述工艺箱为本公开提供的上述工艺箱。所述气体源与所述箱体上的进气口连通，并且所述激光源朝向所述箱体上的光线射入区照射激光。
附图说明
附图是用来提供对本公开的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本公开，但并不构成对本公开的限制。在附图中：
图1是利用已知工艺箱进行激光退火工艺时的示意图；
图2是图1中的工艺箱的仰视图；
图3是利用本公开提供的工艺箱进行激光退火工艺时的示意图；
图4是图3中的工艺箱的仰视图；以及
图5是利用制冷结构对基板进行冷却时的示意图。
具体实施方式
以下结合附图对本公开的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本公开，并不用于限制本公开。
附图标记：10、已知工艺箱；11、开口；20、基板；30、箱体；31、进气口；32、光线射入区；33、光线射出区；331、出气口；34、冷却管路；341、冷却管路的入口；342、冷却管路的出口；35、挡板；36、浓度检测器；37、制冷箱；38、导热层；391、电机；392、活塞；393、温度传感器。
在低温多晶硅薄膜晶体管的制程中，需要形成一层多晶硅膜层，其中，多晶硅膜层的制作方法是通过准分子激光退火(excimer laser anneal，ELA)工艺将原本的非晶硅膜层转变成多晶硅膜层。图1是利用已知工艺箱进行激光退火工艺的示意图。图2是图1中的工艺箱的仰视图。如图1和图2所示，工艺箱10顶部和底部均设置有开口11，两侧的侧壁上设置有进气口，在工艺过程中，激光源发射的激光从工艺箱顶部开口11射入工艺箱，并从底部开口11射向下方的基板20，基板20与工艺箱10发生相对移动，使得激光能够对整个基板20进行扫描。在发射激光的过程中，氮气从进气口进入工艺箱10，并从底部开口11吹向基板20，使得基板20上的非晶硅在氮气环境下结晶。由于开口11为完全开放的狭长开口，因此，当氮气进入工艺箱10、再从底部开口吹出时，会出现中间气流较强、两端气流较弱的现象，从而造成结晶不均匀，产生母拉(mura)现象。
本公开提出了一种用于激光退火工艺的工艺箱和激光退火装置，以使工艺箱吹出的气体分布更均匀。
作为本公开的一方面，提供一种用于激光退火工艺的工艺箱，所述激光退火工艺具体为准分子激光退火工艺。如图3和图4所示，所述工艺箱包括箱体30，箱体30内部形成容纳空间。箱体30上设置有光线射入区32和光线射出区33。箱体30还设置设有进气口31。箱体 30位于光线射出区33的部分由透光材料形成，即，对于用于ELA的激光为透光的。该部分上设置有多个出气口331。
在本公开中，由于箱体30位于所述光线射出区33的部分为透光的，该部分上设置有多个出气口331。因此，对工艺箱30下方的基板20上的非晶硅膜层进行激光退火工艺时，激光可以从较大的光线射出区33射出，而气体(例如氮气)只能从出气口331吹出。气体受到出气口331的限制，与气体从完全开放的狭长开口吹出的方式相比，本公开可以通过设置出气口331的分布，使得吹出的气体分布得更均匀，从而减少工艺箱下方的基板形成的多晶硅膜层上出现母拉(mura)现象，提高膜层质量。
光线射入区32位于箱体30顶部，光线射出区33位于箱体30底部，且光线射入区32和光线射出区33相对设置。为了使得更多的光线进入工艺箱，提高光线利用率，光线射入区32可以为设置在箱体30上的开口。
箱体30沿其长度方向的两侧的侧壁(图3中的左右两个侧壁)上均设置有进气孔31。位于光线射出区33的多个出气口331排列为多列，并且每列包括多个出气口331。每一列出气口331可以沿箱体30的长度方向排列。例如，任意相邻两列出气口331之间的间距大于同一列中相邻两个出气口331之间的间距。相邻两列出气口331之间的间距可以看作两列出气口之间的最近距离，并且同一列中相邻两个出气口331之间的间距可以看作两个出气口331之间的最近距离。由于出气口331的光线透过率与出气口331之间部分的光线透过率存在一定的区别，因此，当同一列中相邻两个出气口331之间的间距较小且相邻两列之间的间距较大时，使得基板20上接收到的激光的强度在与列延伸方向垂直的方向上产生轻微梯度。这种强度梯度有助于晶粒在与列延伸方向垂直的方向上的横向生长。
在示例性实施例中，对于任意相邻两列出气口331，该两列出气口331可以为一一对齐。例如，第一列中的第n个出气口和第二列中的第n个出气口331对齐。当然，在其它实施例中，该两列出气口331中的出气口交错设置。例如，第一列中的第n个出气口331对应于第二列中的第n-1个和第n+1个出气口331之间的位置。
同一列中相邻两个出气口331之间的间距可以为出气口331的口 径的大约0.3～2倍。
具体地，出气口331的口径为大约1mm～3mm。出气口331例如为圆形，此时出气口331的口径为出气口的直径。当然，出气口331可以为矩形或其他形状，并且出气口331的口径为出气口331所在平面上的任意方向的尺寸。
进一步地，所有出气口331的出口总面积占光线射出区33面积的大约75％～90％，例如大于80％，以利于气体的吹出。
例如，箱体30位于光线射出区33的部分采用Al 2O 3制成，从而使得光线射出区33没有设置出气口331的部分透明度较高，不影响光线的射出，且更耐高温，延长工艺箱的使用寿命。
由于在工艺过程中，当基板20与工艺箱30之间的相对移动速度较慢时，激光源发射的相邻两束激光照射在基板30上会有较大的重叠，从而产生热量。热量反馈至箱体30内容易产生热效应堆积，进而使得氮气吹到基板20上时，影响转换成的多晶硅膜层的质量。为此，如图3所示，本公开的工艺箱还包括设置在所述容纳空间中的冷却管路34。冷却管路34用于容纳冷却液等冷却流体，从而降低箱体30内的温度，防止出现热效应堆积。
例如，冷却管路34为具有多处弯折的弯折结构，可以形成“弓”字形(如图3所示)结构，或者“W”字形结构，从而增大冷却面积，提高冷却效果。冷却管路34的入口341和出口342可以分别设置在箱体30的沿其宽度方向的一侧的侧壁上。
为了对基板20上转换成的多晶硅膜层快速冷却，箱体20外部还设置有制冷结构，用于对位于箱体20出光侧的基板20进行冷却。结合图4和图5所示，所述制冷结构具体可以包括设置在箱体30外部的制冷箱37、设置在制冷箱37内的制冷剂、用于调节制冷箱37内气压的压力调节单元，制冷箱37的用于朝向基板20的一侧设置有导热层38。在工艺过程中，对制冷箱37加压，使得制冷剂气化而吸收外界热量，从而起到冷却效果。压力调节单元可以包括设置在制冷箱37内的活塞392和带动活塞392运动的电机391。当然，制冷结构也可以采用其他形式。
应当理解的是，激光退火工艺中，基板20与工艺箱30的相对移动方向和制冷结构与箱体20之间的相对设置位置是相关的。如图4所 示，制冷结构设置在箱体30的右侧，在工艺过程中，基板20沿图4中的由左至右方向与箱体30发生相对移动。
如图4和图5所示，制冷结构的制冷箱37外部还可以设置有温度传感器393，以随时监测环境温度，从而调节制冷结构的制冷温度，对基板20进行有效冷却。
所述工艺箱还可以包括设置在箱体30内的多个挡板35，从而使得氮气在箱体30内分布得更均匀。箱体30内还设置有浓度检测器36，以检测箱体30内的气体浓度。
作为本公开的另一方面，提供一种激光退火装置，包括气体源、激光源和上述工艺箱，所述气体源与箱体30上的进气口31连通，激光源朝向箱体30上的光线射入区照射激光。例如，所述气体源为氮气源。
以上为对本公开提供的用于激光退火工艺的工艺箱和激光退火装置的描述，可以看出，所述工艺箱底部的光线射出区设置有出气口，从而可以使得吹出的气体分布的更均匀，提高基板上的多晶硅膜层质量；并且，由于任意相邻两列出气口之间的间距大于同一列中相邻两个出气口之间的间距，从而使得基板上接收到的激光产生轻微梯度，有助于晶粒横向生长；另外，箱体内设置有冷却管路，从而可以降低箱体内的温度，防止出现热效应堆积；另外，箱体外部还设置有制冷结构，从而可以对转换层的多晶硅膜层进行快速冷却。
由于激光退火装置采用上述工艺箱，因此利用激光退火工艺对基板上的非晶硅膜层进行激光退火以使其转换成多晶硅膜层时，可以提高非晶硅膜层的质量。
可以理解的是，以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式，然而本公开并不局限于此。对于本领域内的普通技术人员而言，在不脱离本公开的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本公开的保护范围。

Claims (17)

  1. 一种用于激光退火工艺的工艺箱，包括箱体，所述箱体内部形成容纳空间，所述箱体设置有光线射入区、光线射出区和进气口，其中所述箱体的位于所述光线射出区的部分由透光材料形成并且设置有多个出气口。
  2. 根据权利要求1所述的工艺箱，其中位于光线射出区的多个出气口排列为多列，每列的方向为沿所述箱体的长度方向，并且每列包括多个所述出气口。
  3. 根据权利要求2所述的工艺箱，其中任意相邻两列出气口之间的间距大于同一列中相邻两个出气口之间的间距。
  4. 根据权利要求2所述的工艺箱，其中同一列中相邻两个出气口之间的间距为出气口的口径的大约0.3～2倍。
  5. 根据权利要求1所述的工艺箱，其中所述出气口的口径为大约1mm～3mm。
  6. 根据权利要求1所述的工艺箱，其中所有出气口的出口总面积占所述光线射出区面积的大约75％～90％。
  7. 根据权利要求1所述的工艺箱，其中所述透光材料为Al 2O 3。
  8. 根据权利要求2所述的工艺箱，其中所述多列其中一列中的所述出气口和相邻列中的所述出气口对齐或交错设置。
  9. 根据权利要求1所述的工艺箱，其中所述出口气为圆形。
  10. 根据权利要求1至9中任意一项所述的工艺箱，其中所述光线射入区位于所述箱体顶部，所述光线射出区位于箱体底部，并且所述光线射入区和所述光线射出区相对设置。
  11. 根据权利要求1至9中任意一项所述的工艺箱，其中所述光线射入区为设置在所述箱体上的开口。
  12. 根据权利要求1至9中任意一项所述的工艺箱，其中所述进气口布置在所述箱体的长度方向上的两个侧壁。
  13. 根据权利要求1至9中任意一项所述的工艺箱，还包括设置在所述容纳空间中的冷却管路，所述冷却管路用于容纳冷却流体。
  14. 根据权利要求10所述的工艺箱，其中所述冷却管路为具有多处弯折的弯折结构。
  15. 根据权利要求1至9中任意一项所述的工艺箱，其中所述箱体外部还设置有制冷结构，用于对位于所述箱体出光侧的基板进行冷却。
  16. 根据权利要求12所述的工艺箱，其中所述制冷结构包括设置在所述箱体外部的制冷箱、设置在制冷箱内的制冷剂以及用于调节制冷箱内气压的压力调节单元，并且所述制冷箱的用于朝向基板的一侧设置有导热层。
  17. 一种激光退火装置，包括气体源、激光源和根据权利要求1至16中任意一项所述的工艺箱，其中所述气体源与所述箱体上的进气口连通，并且所述激光源朝向所述箱体上的光线射入区照射激光。
PCT/CN2018/084035 2017-05-15 2018-04-23 用于激光退火工艺的工艺箱和激光退火装置 Ceased WO2018210102A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201720534489.X 2017-05-15
CN201720534489.XU CN206727063U (zh) 2017-05-15 2017-05-15 用于激光退火工艺的工艺箱、激光退火装置

Publications (1)

Publication Number Publication Date
WO2018210102A1 true WO2018210102A1 (zh) 2018-11-22

Family

ID=60512063

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/084035 Ceased WO2018210102A1 (zh) 2017-05-15 2018-04-23 用于激光退火工艺的工艺箱和激光退火装置

Country Status (2)

Country Link
CN (1) CN206727063U (zh)
WO (1) WO2018210102A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN206727063U (zh) * 2017-05-15 2017-12-08 京东方科技集团股份有限公司 用于激光退火工艺的工艺箱、激光退火装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1519898A (zh) * 2003-01-23 2004-08-11 友达光电股份有限公司 激光退火装置及其应用
CN101034665A (zh) * 2007-04-13 2007-09-12 友达光电股份有限公司 激光退火装置及激光退火方法
JP2007288128A (ja) * 2006-03-23 2007-11-01 Ihi Corp レーザアニール装置
CN206727063U (zh) * 2017-05-15 2017-12-08 京东方科技集团股份有限公司 用于激光退火工艺的工艺箱、激光退火装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1519898A (zh) * 2003-01-23 2004-08-11 友达光电股份有限公司 激光退火装置及其应用
JP2007288128A (ja) * 2006-03-23 2007-11-01 Ihi Corp レーザアニール装置
CN101034665A (zh) * 2007-04-13 2007-09-12 友达光电股份有限公司 激光退火装置及激光退火方法
CN206727063U (zh) * 2017-05-15 2017-12-08 京东方科技集团股份有限公司 用于激光退火工艺的工艺箱、激光退火装置

Also Published As

Publication number Publication date
CN206727063U (zh) 2017-12-08

Similar Documents

Publication Publication Date Title
US11676818B2 (en) Laser irradiation apparatus and method for manufacturing semiconductor device
US9648790B2 (en) Heat exchanger assembly for an electronic display
US9010155B2 (en) Laser annealing apparatus
CN108010920A (zh) 一种显示面板、显示面板的制作方法及显示装置
KR102919904B1 (ko) 레이저 조사 장치, 및 반도체 장치의 제조 방법
US20110107970A1 (en) Heating unit and substrate processing apparatus having the same
US11810799B2 (en) Laser processing apparatus and laser processing method
US8486195B2 (en) Atomic layer deposition apparatus and method of fabricating atomic layer using the same
JP5063995B2 (ja) 熱処理装置
WO2018210102A1 (zh) 用于激光退火工艺的工艺箱和激光退火装置
US10927426B2 (en) Cooling equipment for continuous annealing furnace
CN107002232A (zh) 用于蒸发目的的坩锅组件
KR101084235B1 (ko) 비정질 실리콘 결정화 장치
CN104752278A (zh) 光照射设备
KR101862088B1 (ko) Ela 공정용 레이저 빔 조절 모듈
JP2018085472A (ja) レーザアニール装置
CN104741801A (zh) 光照射设备
CN108428620A (zh) 低温多晶硅及其产品、制备方法和制备装置、激光组件
CN107154348B (zh) 准分子激光退火工序用脱氧装置
JP7781175B2 (ja) レーザ照射装置、レーザ照射方法、及びディスプレイの製造方法
KR102611238B1 (ko) 가열 처리 장치
JP7291755B2 (ja) 加熱処理装置
CN114101902B (zh) 光学系统以及包括其的激光照射装置
JP2024067026A (ja) 基板処理装置
CN107706092A (zh) 一种准分子激光退火设备

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18802290

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 16-04-2020)

122 Ep: pct application non-entry in european phase

Ref document number: 18802290

Country of ref document: EP

Kind code of ref document: A1