WO2018210102A1 - Armoire pour réaliser un procédé de recuit au laser, et dispositif de recuit au laser - Google Patents

Armoire pour réaliser un procédé de recuit au laser, et dispositif de recuit au laser Download PDF

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Publication number
WO2018210102A1
WO2018210102A1 PCT/CN2018/084035 CN2018084035W WO2018210102A1 WO 2018210102 A1 WO2018210102 A1 WO 2018210102A1 CN 2018084035 W CN2018084035 W CN 2018084035W WO 2018210102 A1 WO2018210102 A1 WO 2018210102A1
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WO
WIPO (PCT)
Prior art keywords
light
area
tank
process box
box according
Prior art date
Application number
PCT/CN2018/084035
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English (en)
Chinese (zh)
Inventor
王景帅
郝永志
吴嘉禄
李喆镐
Original Assignee
京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
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Application filed by 京东方科技集团股份有限公司, 鄂尔多斯市源盛光电有限责任公司 filed Critical 京东方科技集团股份有限公司
Publication of WO2018210102A1 publication Critical patent/WO2018210102A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

Definitions

  • the present disclosure relates to the field of production of display products, and in particular to a process chamber and a laser annealing device for a laser annealing process
  • low temperature polysilicon transistor (LTPS TFT) technology Compared with amorphous silicon thin film transistors (a-Si TFTs), low temperature polysilicon transistor (LTPS TFT) technology has many advantages, such as high mobility and can be prepared at a lower temperature and substrate. Flexible choice, low preparation costs, etc. Since the excellent characteristics of the low-temperature polysilicon thin film transistor have obvious advantages in the display, it has become an important material in display production.
  • a-Si TFTs amorphous silicon thin film transistors
  • LTPS TFT low temperature polysilicon transistor
  • the present disclosure provides a process tank for a laser annealing process, including a tank body, the tank body forming an accommodation space, the tank body being provided with a light injection zone, a light exit zone and an air inlet, wherein the tank A portion of the body located in the light exiting region is formed of a light transmissive material and is provided with a plurality of air outlets.
  • the plurality of air outlets located in the light exiting region are arranged in a plurality of columns, each column having a direction along a length of the housing, and each of the columns includes a plurality of the air outlets.
  • the spacing between any adjacent two listed ports is greater than the spacing between adjacent two outlets in the same column.
  • the spacing between adjacent two air outlets in the same column is about 0.3 to 2 times the diameter of the air outlet.
  • the air outlet has a caliber of about 1 mm to 3 mm.
  • the total outlet area of all of the air outlets is between about 75% and 90% of the area of the light exit area.
  • the light transmissive material is Al 2 O 3 .
  • the air outlets in one of the plurality of columns and the air outlets in adjacent columns are aligned or staggered.
  • the outlet gas is circular.
  • the light injecting area is located at the top of the box, the light exiting area is located at the bottom of the box, and the light injecting area and the light emitting area are oppositely disposed.
  • the light injecting area is an opening disposed on the case.
  • the air inlets are disposed on two side walls in the length direction of the case.
  • the process tank further includes a cooling line disposed in the receiving space for containing a cooling fluid.
  • the cooling circuit is a bent structure having a plurality of bends.
  • a cooling structure is further disposed on the exterior of the casing for cooling the substrate located on the light exiting side of the casing.
  • the refrigeration structure includes a refrigeration box disposed outside the tank, a refrigerant disposed in the refrigeration box, and a pressure adjustment unit for adjusting air pressure in the refrigeration box, the refrigeration box A heat conducting layer is provided on one side for facing the substrate.
  • the present disclosure also provides a laser annealing apparatus including a gas source, a laser source, and a process tank.
  • the process box is the above process box provided by the present disclosure.
  • the gas source is in communication with an air inlet on the housing, and the laser source illuminates a laser toward a light incident region on the housing.
  • FIG. 1 is a schematic view showing a laser annealing process using a known process chamber
  • Figure 2 is a bottom plan view of the process box of Figure 1;
  • FIG. 3 is a schematic view of a laser annealing process performed by using the process box provided by the present disclosure
  • Figure 4 is a bottom plan view of the process box of Figure 3;
  • Fig. 5 is a schematic view showing a state in which a substrate is cooled by a cooling structure.
  • Reference numerals 10, known process box; 11, opening; 20, substrate; 30, box; 31, air inlet; 32, light injection area; 33, light exit area; 331, air outlet; Cooling line; 341, inlet of cooling line; 342, outlet of cooling line; 35, baffle; 36, concentration detector; 37, refrigeration box; 38, heat conducting layer; 391, motor; 392, piston; ,Temperature Sensor.
  • FIG. 1 is a schematic illustration of a laser annealing process using a known process chamber.
  • Figure 2 is a bottom plan view of the process box of Figure 1. As shown in FIG. 1 and FIG. 2, the top and bottom of the process box 10 are provided with openings 11, and the side walls of the two sides are provided with air inlets. During the process, the laser light emitted by the laser source is shot from the top opening 11 of the process box.
  • the process box is inserted into the substrate 20 from the bottom opening 11 and the substrate 20 is moved relative to the process box 10 so that the laser can scan the entire substrate 20.
  • nitrogen gas enters the process tank 10 from the gas inlet and is blown from the bottom opening 11 toward the substrate 20, so that the amorphous silicon on the substrate 20 is crystallized under a nitrogen atmosphere. Since the opening 11 is a completely open narrow opening, when nitrogen enters the process box 10 and is blown out from the bottom opening, there is a phenomenon that the middle air flow is strong and the air flow at both ends is weak, thereby causing uneven crystallization and generating a mother pull. (mura) phenomenon.
  • the present disclosure proposes a process chamber and a laser annealing apparatus for a laser annealing process to make the gas distribution of the process box more uniform.
  • a process tank for a laser annealing process is provided, which is specifically an excimer laser annealing process.
  • the process box includes a case 30, and an interior of the case 30 forms an accommodation space.
  • a light incident region 32 and a light exiting region 33 are disposed on the casing 30.
  • the casing 30 is also provided with an air inlet 31.
  • the portion of the casing 30 located at the light exiting area 33 is formed of a light transmissive material, i.e., is transparent to laser light for ELA.
  • a plurality of air outlets 331 are provided in the portion.
  • the portion of the casing 30 located in the light exiting area 33 is light transmissive, a plurality of air outlets 331 are provided in the portion. Therefore, when the amorphous silicon film layer on the substrate 20 under the process tank 30 is subjected to a laser annealing process, the laser light can be emitted from the large light emitting region 33, and the gas (for example, nitrogen gas) can be blown only from the gas outlet port 331. The gas is restricted by the gas outlet 331. Compared with the manner in which the gas is blown out from the completely open slit opening, the present disclosure can reduce the distribution of the gas under the process box by setting the distribution of the gas outlet 331 to distribute the gas more uniformly. A mura phenomenon occurs on the polysilicon film layer to improve the quality of the film layer.
  • the gas for example, nitrogen gas
  • the light incident area 32 is located at the top of the casing 30, and the light exiting area 33 is located at the bottom of the casing 30, and the light incident area 32 and the light exiting area 33 are disposed opposite each other.
  • the light injection zone 32 may be an opening disposed in the case 30.
  • the side walls of the casing 30 along both sides in the longitudinal direction thereof are provided with intake holes 31.
  • the plurality of air outlets 331 located in the light exiting area 33 are arranged in a plurality of columns, and each of the columns includes a plurality of air outlets 331.
  • Each of the listed ports 331 may be arranged along the length direction of the case 30. For example, the spacing between any two adjacent gas ports 331 is greater than the spacing between adjacent two gas outlets 331 in the same column.
  • the spacing between the adjacent two listed ports 331 can be regarded as the closest distance between the two listed ports, and the spacing between adjacent two outlets 331 in the same column can be regarded as between the two outlets 331. The closest distance.
  • the intensity of the laser light received on the substrate 20 is caused to slightly gradient in a direction perpendicular to the column extending direction. This intensity gradient contributes to the lateral growth of the grains in a direction perpendicular to the direction in which the columns extend.
  • the two listed ports 331 may be one-to-one aligned.
  • the nth air outlet in the first column is aligned with the nth air outlet 331 in the second column.
  • the air outlets in the two listed ports 331 are staggered.
  • the nth air outlet 331 in the first column corresponds to the position between the n-1th and n+1th air outlets 331 in the second column.
  • the spacing between adjacent two air outlets 331 in the same column may be about 0.3 to 2 times the diameter of the air outlet 331.
  • the diameter of the air outlet 331 is approximately 1 mm to 3 mm.
  • the air outlet 331 is, for example, circular, and the diameter of the air outlet 331 is the diameter of the air outlet.
  • the air outlet 331 may have a rectangular shape or other shape, and the diameter of the air outlet 331 is a dimension in any direction on the plane of the air outlet 331.
  • the total outlet area of all the air outlets 331 accounts for about 75% to 90% of the area of the light exiting area 33, for example, more than 80%, to facilitate the blowing of the gas.
  • the portion of the casing 30 located in the light exiting region 33 is made of Al 2 O 3 , so that the portion of the light exiting region 33 where the air outlet 331 is not provided has a high transparency, does not affect the emission of light, and is more resistant to high temperatures and prolongs the process. The life of the box.
  • the process tank of the present disclosure further includes a cooling line 34 disposed in the accommodating space.
  • the cooling line 34 is for accommodating a cooling fluid such as a coolant, thereby lowering the temperature inside the tank 30 and preventing thermal effect accumulation.
  • the cooling duct 34 is a bent structure having a plurality of bends, and can form a "bow" shape (as shown in FIG. 3) or a "W" shape structure, thereby increasing the cooling area and improving the cooling effect.
  • the inlet 341 and the outlet 342 of the cooling pipe 34 may be respectively disposed on the side walls of one side of the casing 30 in the width direction thereof.
  • the refrigerating structure may specifically include a refrigerating tank 37 disposed outside the casing 30, a refrigerant disposed in the refrigerating tank 37, and a pressure adjusting unit for adjusting the air pressure in the refrigerating tank 37.
  • a heat conducting layer 38 is provided on a side of the refrigeration box 37 for facing the substrate 20.
  • the pressure regulating unit may include a piston 392 disposed within the refrigeration box 37 and a motor 391 that moves the piston 392.
  • the refrigeration structure can also take other forms.
  • the relative movement direction of the substrate 20 and the process tank 30 and the relative arrangement position between the refrigeration structure and the casing 20 are related. As shown in Fig. 4, the refrigeration structure is disposed on the right side of the casing 30, and the substrate 20 is relatively moved with the casing 30 in the left-to-right direction in Fig. 4 during the process.
  • a temperature sensor 393 may be disposed outside the refrigeration box 37 of the refrigeration structure to monitor the ambient temperature at any time, thereby adjusting the cooling temperature of the refrigeration structure, and effectively cooling the substrate 20.
  • the process tank may also include a plurality of baffles 35 disposed within the tank 30 such that nitrogen is more evenly distributed within the tank 30.
  • a concentration detector 36 is also disposed in the casing 30 to detect the gas concentration in the tank 30.
  • a laser annealing apparatus including a gas source, a laser source, and the above-described process tank, the gas source being in communication with an air inlet 31 on the casing 30, the laser source being directed toward the casing 30 The light is incident on the area to illuminate the laser.
  • the gas source is a nitrogen source.
  • the above is a description of the process box and the laser annealing apparatus for the laser annealing process provided by the present disclosure. It can be seen that the light exiting area at the bottom of the process box is provided with an air outlet, so that the gas distribution of the blown gas can be more uniform.
  • a cooling pipe is arranged in the tank, so that the temperature inside the box can be lowered to prevent thermal effect accumulation; in addition, a cooling structure is arranged outside the box, so that the polysilicon film of the conversion layer can be The layer is rapidly cooled.
  • the laser annealing device adopts the above process box, when the amorphous silicon film layer on the substrate is laser annealed by the laser annealing process to be converted into a polysilicon film layer, the quality of the amorphous silicon film layer can be improved.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention concerne une armoire pour réaliser un procédé de recuit au laser comprenant un corps d'armoire. Un espace de logement est formé à l'intérieur du corps d'armoire. Le corps d'armoire a une zone d'entrée de lumière, une zone de sortie de lumière et une entrée d'air. Une partie du corps d'armoire au niveau de la zone de sortie de lumière est formée d'un matériau optiquement transmissif et comporte de multiples sorties d'air. L'invention concerne également un dispositif de recuit au laser.
PCT/CN2018/084035 2017-05-15 2018-04-23 Armoire pour réaliser un procédé de recuit au laser, et dispositif de recuit au laser WO2018210102A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201720534489.X 2017-05-15
CN201720534489.XU CN206727063U (zh) 2017-05-15 2017-05-15 用于激光退火工艺的工艺箱、激光退火装置

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WO2018210102A1 true WO2018210102A1 (fr) 2018-11-22

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WO (1) WO2018210102A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN206727063U (zh) * 2017-05-15 2017-12-08 京东方科技集团股份有限公司 用于激光退火工艺的工艺箱、激光退火装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1519898A (zh) * 2003-01-23 2004-08-11 友达光电股份有限公司 激光退火装置及其应用
CN101034665A (zh) * 2007-04-13 2007-09-12 友达光电股份有限公司 激光退火装置及激光退火方法
JP2007288128A (ja) * 2006-03-23 2007-11-01 Ihi Corp レーザアニール装置
CN206727063U (zh) * 2017-05-15 2017-12-08 京东方科技集团股份有限公司 用于激光退火工艺的工艺箱、激光退火装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1519898A (zh) * 2003-01-23 2004-08-11 友达光电股份有限公司 激光退火装置及其应用
JP2007288128A (ja) * 2006-03-23 2007-11-01 Ihi Corp レーザアニール装置
CN101034665A (zh) * 2007-04-13 2007-09-12 友达光电股份有限公司 激光退火装置及激光退火方法
CN206727063U (zh) * 2017-05-15 2017-12-08 京东方科技集团股份有限公司 用于激光退火工艺的工艺箱、激光退火装置

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