WO2018205361A1 - 一种蒸镀装置 - Google Patents

一种蒸镀装置 Download PDF

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Publication number
WO2018205361A1
WO2018205361A1 PCT/CN2017/089609 CN2017089609W WO2018205361A1 WO 2018205361 A1 WO2018205361 A1 WO 2018205361A1 CN 2017089609 W CN2017089609 W CN 2017089609W WO 2018205361 A1 WO2018205361 A1 WO 2018205361A1
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WIPO (PCT)
Prior art keywords
substrate
vapor deposition
vapor
fixing member
hole
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/CN2017/089609
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English (en)
French (fr)
Inventor
夏存军
邹新
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Publication date
Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to US15/566,712 priority Critical patent/US10629853B2/en
Publication of WO2018205361A1 publication Critical patent/WO2018205361A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C13/00—Means for manipulating or holding work, e.g. for separate articles
    • B05C13/02—Means for manipulating or holding work, e.g. for separate articles for particular articles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention relates to the field of semiconductor manufacturing, and more particularly to an evaporation apparatus.
  • AMOLEDs Active matrix organic light-emitting diodes
  • the mainstream preparation method of AMOLED full-color display is thermal evaporation and precision mask method, but this method has a more difficult challenge. It is easy to mix colors when red, green and blue are evaporated by precision mask. phenomenon.
  • the color mixing phenomenon is mainly caused by the alignment process of the vapor deposition device. During the alignment process of the vapor deposition device, the incoming vapor deposition substrate is only supported by the fixture at a position of about 30 mm around, so that the vapor deposition substrate will be due to gravity.
  • the mainstream practice now is to use small substrates to reduce such problems.
  • the small substrate has a small amount of sag and a small amount of sag to overcome the color mixing problem, but this is disadvantageous for a large-sized substrate, high algebra to reduce cost, and improve yield.
  • the object of the present invention is to provide an evaporation device, which improves the alignment accuracy of the vapor deposition substrate and the mask plate, and solves the color mixture caused by the alignment deviation between the vapor deposition substrate and the mask plate during the alignment process, thereby affecting the color. Quality technical problems.
  • the present invention provides an evaporation apparatus comprising a main chamber and at least one sub-chamber communicating with the main chamber through a valve; wherein the sub-chamber includes an adsorption platen, an adsorption tube, and a fixing member.
  • the fixing member is disposed above the adsorption platen;
  • the adsorption tube adsorbs the substrate to be vapor-deposited onto the adsorption platen through the fixing member and the adsorption platen, and the substrate to be vapor-deposited and the mask are The plate is aligned, and the substrate to be vapor-deposited and the mask plate are fixed by the fixing member;
  • a first through hole is disposed on the adsorption platen, and a second through hole is disposed on the fixing member, wherein the first through hole is in one-to-one correspondence with the second through hole, so that the adsorption tube passes through the The first through hole and the second through hole adsorb the substrate to be evaporated;
  • the surface of the adsorption platen is flat.
  • the first through hole and the second through hole are both plural and are disposed at equal intervals.
  • the sub-chamber further includes a substrate holder and a mask plate holder; the substrate holder is for mounting the substrate to be vapor-deposited, and the mask plate holder is used to mount the mask Membrane plate.
  • the substrate holder and the mask plate holder are movable in the sub-chamber.
  • the fixing member is a magnet.
  • a pump is further provided in the sub-chamber for evacuating the sub-chamber.
  • the fixing member is movably disposed on the adsorption platen.
  • the mask is a metal mask.
  • the present invention also provides an evaporation apparatus comprising a main chamber and at least one sub-chamber communicating with the main chamber through a valve; wherein the sub-chamber includes an adsorption platen, an adsorption tube, and a fixing member.
  • the fixing member is disposed above the adsorption platen;
  • the adsorption tube adsorbs the substrate to be vapor-deposited onto the adsorption platen through the fixing member and the adsorption platen, and the substrate to be vapor-deposited and the mask are The plate is aligned, and the substrate to be vapor-deposited and the mask plate are fixed by the fixing member.
  • the adsorption platen is provided with a first through hole
  • the fixing member is provided with a second through hole
  • the first through hole corresponds to the second through hole. So that the adsorption tube adsorbs the substrate to be vapor-deposited through the first through hole and the second through hole.
  • the first through hole and the second through hole are both plural and are disposed at equal intervals.
  • the surface of the adsorption platen is flat.
  • the sub-chamber further includes a substrate holder and a mask plate holder; the substrate holder is for mounting the substrate to be vapor-deposited, and the mask plate holder is used to mount the mask Membrane plate.
  • the substrate holder and the mask plate holder are movable in the sub-chamber.
  • the fixing member is a magnet.
  • a pump is further provided in the sub-chamber for evacuating the sub-chamber.
  • the fixing member is movably disposed on the adsorption platen.
  • the mask is a metal mask.
  • a sub-chamber that communicates with the main chamber is provided, and an adsorption platen, an adsorption tube, and a fixing member are disposed in the sub-chamber, and when the vapor-deposited substrate is vapor-deposited, the adsorption tube is fixed.
  • the adsorption platen adsorbs the substrate to be vapor-deposited onto the adsorption platen, aligns the substrate to be vapor-deposited with the mask plate, and fixes the substrate to be vapor-deposited and the mask plate through the fixing member, thereby improving
  • the alignment accuracy of the vapor-deposited substrate and the mask is to avoid color mixing and improve color quality.
  • FIG. 1 is a schematic structural view of a vapor deposition device according to a preferred embodiment of the present invention.
  • 2A-2E are schematic diagrams showing various states of the working process of the vapor deposition device according to a preferred embodiment of the present invention.
  • FIG. 3 is another schematic structural view of a vapor deposition device according to a preferred embodiment of the present invention.
  • FIG. 1 is a schematic structural diagram of a vapor deposition apparatus according to a preferred embodiment of the present invention.
  • the vapor deposition apparatus includes a main chamber 11 and a sub-chamber 10 communicating with the main chamber 11 through a valve 6; wherein the sub-chamber 10 is provided with a pump (not shown). It is used for vacuuming the vapor deposition device.
  • the pump in this embodiment may be a dry pump, a cold pump or a molecular pump or the like.
  • a molecular pump and a dry pump may be disposed in the sub-chamber 10 to evacuate the vapor deposition device; or A cold pump and a dry pump are provided in the sub-chamber 10, and the high vacuum of the sub-chamber 10 can also be achieved.
  • valve 6 When the vapor deposition device is in operation, the valve 6 is first opened, and after the vacuuming device is evacuated, the valve 6 is closed, and the alignment operation of the substrate 9 to be vapor-deposited and the mask 5 is completed in the sub-chamber 10.
  • the vapor deposition device of the present invention is different from the prior art in that the vapor deposition device of the present invention performs the leveling operation on the vapor deposition substrate 9 in the sub-chamber 10 to prevent the substrate 9 to be vaporized from sagging due to its own gravity.
  • the substrate to be vapor-deposited 9 and the mask 5 are deviated during the alignment process.
  • the sub-chamber 10 in the vapor deposition device of the preferred embodiment includes a substrate holder 3, a mask plate holder 4, a suction platen 2, a suction tube 7, and a fixing member 8.
  • the substrate holder 3 is used for mounting the substrate 9 to be vapor-deposited;
  • the mask plate holder 4 is used for mounting the mask plate 5;
  • the adsorption platen 2 and the adsorption tube 7 are both for leveling operation of the vapor-deposited substrate 9;
  • the adsorption tube 7 adsorbs the substrate 9 to be vapor-deposited onto the adsorption platen 2 through the fixing member 8 and the adsorption platen 2, and the substrate to be vapor-deposited is to be evaporated.
  • 9 is aligned with the mask 5, and the substrate 9 to be vapor-deposited and the mask 5 are fixed by the fixing member 8.
  • the fixing member 8 is disposed above the adsorption table 2, and the substrate holder 3 and the mask holder 4 are movably disposed in the sub-chamber 10 so that evaporation is performed.
  • the adsorption platen 2, the substrate 9 to be vapor-deposited, and the mask plate 5 have a certain distance, so that the alignment of the substrate 9 to be vapor-deposited and the mask plate 5 is not affected by the action of the fixing member 8.
  • a first through hole 13 is disposed on the adsorption platen 2
  • a second through hole 14 is disposed on the fixing member 8.
  • the first through hole 13 and the second through hole 14 are in one-to-one correspondence, so that the adsorption tube 7 passes
  • the first through hole 13 and the second through hole 14 adsorb the substrate 9 to be vapor-deposited, and are leveled on the surface of the adsorption platen 2 by the adsorption force of the adsorption tube 7.
  • the surface of the adsorption platen 2 is flat, providing a flattened flattening interface for the substrate 9 to be vapor-deposited.
  • the first through hole 13 and the second through hole 14 are both disposed at equal intervals, so that after the substrate to be vapor-deposited 9 is adsorbed onto the adsorption platen 2, the adsorption tube 7 can be steamed.
  • the plated substrate 9 applies a uniform force to flatten the substrate 9 to be vapor-deposited.
  • the fixing member 8 is a magnet
  • the masking plate 5 is a metal mask.
  • the substrate to be vapor-deposited 9 and the mask 5 can be fixed by the magnetic force of the magnet and the metal.
  • the vapor deposition apparatus of the preferred embodiment places some components in the main chamber 11, such as the evaporation source 12, to reduce the volume of the subchamber 10, thereby shortening the time during which the subchamber 10 is evacuated.
  • FIG. 2A-2E are schematic diagrams showing various states of the working process of the vapor deposition apparatus according to a preferred embodiment of the present invention.
  • the substrate 9 to be vapor-deposited is placed on the substrate holder 3 by the alignment mark 1, the mask plate 5 is placed on the mask plate holder 4, and the valve 6 is opened.
  • the sub-chamber 10 and the main chamber 11 are evacuated by a pump.
  • the valve 6 is closed, a certain amount of nitrogen gas is introduced into the sub-chamber 10, and the substrate 9 to be vapor-deposited is adsorbed onto the adsorption platen 2 by the adsorption tube 7, and is carried out on the adsorption platen 2. Leveling operation.
  • the substrate 9 to be vapor-deposited and the masking plate 5 are aligned by the fixing member 8.
  • FIG. 3 is another schematic structural diagram of a vapor deposition apparatus according to a preferred embodiment of the present invention.
  • the vapor deposition apparatus of the preferred embodiment includes two sub-chambers 20 and one main chamber 21, wherein the two sub-chambers 20 each work independently, and the structure and operation of each sub-chamber The process is shown in FIG. 2A-2E, and details are not described herein. For details, refer to the description of only one sub-chamber structure.
  • two sub-chambers can be disposed in the evaporation device, and during the evaporation process, one sub-chamber is in the alignment process, and the other sub-chamber is in the evaporation process, thereby further saving the beat. Improve efficiency.
  • the structure of the two sub-chambers 20 is the same as that of the sub-chamber shown in FIG. 1 and will not be described herein. For details, refer to the above description.
  • a sub-chamber that communicates with the main chamber is provided, and an adsorption platen, an adsorption tube, and a fixing member are disposed in the sub-chamber, and when the vapor-deposited substrate is vapor-deposited, the adsorption tube is fixed.
  • the adsorption platen adsorbs the substrate to be vapor-deposited onto the adsorption platen, aligns the substrate to be vapor-deposited with the mask plate, and fixes the substrate to be vapor-deposited and the mask plate through the fixing member, thereby improving
  • the alignment accuracy of the vapor-deposited substrate and the mask is to avoid color mixing and improve color quality.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

提供一种蒸镀装置，包括主腔室(11)以及至少一个通过阀门(6)与主腔室(11)相通的副腔室(10)；其中，副腔室(10)包括吸附台板(2)、吸附管(7)以及固定件(8)，对待蒸镀基板（9）进行蒸镀时，吸附管(7)通过固定件(8)以及吸附台板(2)将待蒸镀基板(9)吸附至吸附台板(2)上，将待蒸镀基板(9)与掩膜板(5)进行对位，并通过固定件(8)固定待蒸镀基板(9)与掩膜板(5)。

Description

一种蒸镀装置 技术领域
本发明涉及半导体制程领域，尤其涉及一种蒸镀装置。
 背景技术
有源矩阵有机发光二极管（AMOLED）具有高对比、宽视角、响应速度快等，越来越受到人们的重视。而AMOLED全彩显示器较主流的制备方式是热蒸镀加精密掩膜板法，但该方法有较艰巨的一项挑战就是红、绿、蓝三色用精密掩膜板蒸镀时容易有混色现象。混色现象主要来源于蒸镀装置对位过程中引起的，在蒸镀装置对位过程中，传入的蒸镀基板只有周边30毫米左右的位置有治具承接，这样蒸镀基板由于重力原因会下垂，对位时精密掩膜板与蒸镀基板要不停的接触分离等动作来实现精密对位，在此接触分离对位过程中，容易对蒸镀基板产生缺陷、蒸镀基板自身重力作用对精密掩膜板产生变形而引起的对位偏差等最终结果是混色影响色质。
现在主流做法是采用小基板来降低这样的问题。小基板因重量小而下垂量少来克服混色问题，但这样不利于大尺寸基板、高代数来降低成本的使用及良率的提高等。
故，有必要提供一种蒸镀装置，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种蒸镀装置，提高蒸镀基板与掩膜板的对位精度，以解决蒸镀基板与掩膜板在对位过程中由于对位偏差造成的混色，进而影响色质的技术问题。
 技术解决方案
本发明提供一种蒸镀装置，其包括主腔室以及至少一个通过阀门与所述主腔室相通的副腔室；其中，所述副腔室包括吸附台板、吸附管以及固定件，所述固定件设于所述吸附台板上方；
对待蒸镀基板进行蒸镀时，所述吸附管通过所述固定件以及所述吸附台板将所述待蒸镀基板吸附至所述吸附台板上，将所述待蒸镀基板与掩膜板进行对位，并通过所述固定件固定所述待蒸镀基板与所述掩膜板；
所述吸附台板上设有第一通孔，所述固定件上设有第二通孔，所述第一通孔与所述第二通孔一一对应，以使得所述吸附管通过所述第一通孔与所述第二通孔吸附所述待蒸镀基板；
所述吸附台板表面平整。
在本发明的蒸镀装置中，所述第一通孔与所述第二通孔均为多个，且均等间距设置。
在本发明的蒸镀装置中，所述副腔室还包括基板夹具以及掩膜板夹具；所述基板夹具用于安装所述待蒸镀基板，所述掩膜板夹具用于安装所述掩膜板。
在本发明的蒸镀装置中，所述基板夹具以及所述掩膜板夹具均可移动的设置在所述副腔室内。
在本发明的蒸镀装置中，所述固定件为磁铁。
在本发明的蒸镀装置中，所述副腔室内还设有泵，用于对所述副腔室进行抽真空处理。
在本发明的蒸镀装置中，所述固定件可移动的设置在所述吸附台板上。
在本发明的蒸镀装置中，所述掩膜板为金属掩膜板。
本发明还提供一种蒸镀装置，包括主腔室以及至少一个通过阀门与所述主腔室相通的副腔室；其中，所述副腔室包括吸附台板、吸附管以及固定件，所述固定件设于所述吸附台板上方；
对待蒸镀基板进行蒸镀时，所述吸附管通过所述固定件以及所述吸附台板将所述待蒸镀基板吸附至所述吸附台板上，将所述待蒸镀基板与掩膜板进行对位，并通过所述固定件固定所述待蒸镀基板与所述掩膜板。
在本发明的蒸镀装置中，所述吸附台板上设有第一通孔，所述固定件上设有第二通孔，所述第一通孔与所述第二通孔一一对应，以使得所述吸附管通过所述第一通孔与所述第二通孔吸附所述待蒸镀基板。
在本发明的蒸镀装置中，所述第一通孔与所述第二通孔均为多个，且均等间距设置。
在本发明的蒸镀装置中，所述吸附台板表面平整。
在本发明的蒸镀装置中，所述副腔室还包括基板夹具以及掩膜板夹具；所述基板夹具用于安装所述待蒸镀基板，所述掩膜板夹具用于安装所述掩膜板。
在本发明的蒸镀装置中，所述基板夹具以及所述掩膜板夹具均可移动的设置在所述副腔室内。
在本发明的蒸镀装置中，所述固定件为磁铁。
在本发明的蒸镀装置中，所述副腔室内还设有泵，用于对所述副腔室进行抽真空处理。
在本发明的蒸镀装置中，所述固定件可移动的设置在所述吸附台板上。
在本发明的蒸镀装置中，所述掩膜板为金属掩膜板。
 有益效果
本发明的蒸镀装置，通过设置一与主腔室相通的副腔室，并在副腔室中设置吸附台板、吸附管以及固定件，对待蒸镀基板进行蒸镀时，吸附管通过固定件以及吸附台板将待蒸镀基板吸附至吸附台板上，将待蒸镀基板与掩膜板进行对位，并通过固定件固定所述待蒸镀基板与所述掩膜板，从而提高待蒸镀基板与掩膜板的对位精度，避免混色现象，提高色质。
 附图说明
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
图1为本发明优选实施例提供的蒸镀装置的结构示意图；
图2A-2E为本发明优选实施例提供的蒸镀装置工作过程各个状态示意图；
图3为本发明优选实施例提供的蒸镀装置的另一种结构示意图。
 本发明的最佳实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
参阅图1，图1为本发明优选实施例提供的蒸镀装置的结构示意图。如图1所示，该蒸镀装置包括主腔室11以及一个通过阀门6与主腔室11相通的副腔室10；其中，该副腔室10中设有泵（图中未标示），用于对所述蒸镀装置进行抽真空处理。优选的，本实施例中的泵可为干泵、冷泵或者分子泵等。进一步的，由于副腔室10的真空度要求较高，为实现副腔室10的高真空度，可在副腔室10中设置分子泵和干泵，对蒸镀装置进行抽真空处理；或者在副腔室10中设置冷泵和干泵，同样可以实现副腔室10的高真空度。
该蒸镀装置工作时，首先打开该阀门6，对蒸镀装置进行抽真空处理后，关闭该阀门6，在副腔室10中完成待蒸镀基板9与掩膜板5的对位操作。
本发明的蒸镀装置与现有技术的区别在于，本发明的蒸镀装置通过在副腔室10中先对待蒸镀基板9进行拉平操作，避免待蒸镀基板9由于本身的重力作用下垂，使得待蒸镀基板9与掩膜板5在对位过程中出现偏差。
具体的，本优选实施例的蒸镀装置中的副腔室10包括：基板夹具3、掩膜板夹具4、吸附台板2、吸附管7以及固定件8。其中，基板夹具3用于安装待蒸镀基板9；掩膜板夹具4用于安装掩膜板5；吸附台板2以及吸附管7均用于对待蒸镀基板9进行拉平操作；固定件8用于固定对位完成后的待蒸镀基板9与掩膜板5。
本优选实施例的蒸镀装置，对待蒸镀基板9进行蒸镀时，吸附管7通过固定件8以及吸附台板2将待蒸镀基板9吸附至吸附台板2上，将待蒸镀基板9与掩膜板5进行对位，并通过固定件8固定待蒸镀基板9与掩膜板5。
特别的，本优选实施例中将固定件8设置在吸附台板2上方，同时可将基板夹具3和掩膜板夹具4可移动的设置在该副腔室10内，以使得在进行蒸镀前，该吸附台板2、待蒸镀基板9以及掩膜板5具有一定间距，从而不会因为该固定件8的作用，影响待蒸镀基板9和掩膜板5的对位。
另外，在吸附台板2上设置有第一通孔13，在固定件8上设置有第二通孔14，第一通孔13与第二通孔14一一对应，以使得吸附管7通过第一通孔13与第二通孔14吸附待蒸镀基板9，并在所述吸附管7的吸附力的作用下，在吸附台板2表面进行拉平作用。本优选实施例中，该吸附台板2表面平整，为待蒸镀基板9提供平整的拉平界面。
本优选实施例中，该第一通孔13与第二通孔14均为多个，且均等间距设置，以使得待蒸镀基板9吸附至吸附台板2上后，吸附管7可对待蒸镀基板9施加均匀的力，将待蒸镀基板9拉平。
优选的，该固定件8为磁铁，该掩膜板5为金属掩膜板。这样使得该待蒸镀基板9与掩膜板5可在磁铁以及金属的磁力作用下固定。
本优选实施例的蒸镀装置将一些部件放置于主腔室内11，如：蒸发源12，以此来减小副腔室10的体积，进而缩短副腔室10抽真空的时间。
下面对本优选实施例的蒸镀装置的工作过程进行详细描述。参阅图2A-2E，图2A-2E为本发明优选实施例提供的蒸镀装置工作过程各个状态示意图。
如图2A所示，该蒸镀装置工作时，通过对位标志1，将待蒸镀基板9放置在基板夹具3上，将掩膜板5放置在掩膜板夹具4上，打开阀门6，通过泵对副腔室10和主腔室11进行抽真空处理。
如图2B、2C所示，关闭阀门6，往副腔室10中通入一定量的氮气，利用吸附管7将待蒸镀基板9吸附至吸附台板2上，在吸附台板2上进行拉平操作。
接着，如图2D所示，将掩膜板5与待蒸镀基板9进行对位后用固定件8固定对位后的待蒸镀基板9与掩膜板5。
最后，如图2E所示，抽真空至副腔室10与主腔室11真空度一致后，打开阀门6，使得位于主腔室11内的蒸发源12对待蒸镀基板9进行蒸镀。
参阅图3，图3为本发明优选实施例提供的蒸镀装置的另一种结构示意图。如图3所示，本优选实施例的蒸镀装置包括两个副腔室20以及一个主腔室21，其中，两个副腔室20各自独立工作，并且每个副腔室的结构以及工作过程均如图2A-2E所示，在此不做赘述，具体可参照上述只有一个副腔室结构的描述。本实施例可在蒸镀装置中设置两个副腔室，并且可实现在蒸镀工艺过程中：一个副腔室处于对位过程，另一个副腔室处于蒸镀过程，从而进一步节省节拍，提高效率。
两个副腔室20的结构均与图1中所示副腔室的结构一致，在此不做赘述，具体可参照上述描述。
本发明的蒸镀装置，通过设置一与主腔室相通的副腔室，并在副腔室中设置吸附台板、吸附管以及固定件，对待蒸镀基板进行蒸镀时，吸附管通过固定件以及吸附台板将待蒸镀基板吸附至吸附台板上，将待蒸镀基板与掩膜板进行对位，并通过固定件固定所述待蒸镀基板与所述掩膜板，从而提高待蒸镀基板与掩膜板的对位精度，避免混色现象，提高色质。
综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (18)

  1. 一种蒸镀装置，其包括主腔室以及至少一个通过阀门与所述主腔室相通的副腔室；其中，所述副腔室包括吸附台板、吸附管以及固定件，所述固定件设于所述吸附台板上方；
    对待蒸镀基板进行蒸镀时，所述吸附管通过所述固定件以及所述吸附台板将所述待蒸镀基板吸附至所述吸附台板上，将所述待蒸镀基板与掩膜板进行对位，并通过所述固定件固定所述待蒸镀基板与所述掩膜板；
    所述吸附台板上设有第一通孔，所述固定件上设有第二通孔，所述第一通孔与所述第二通孔一一对应，以使得所述吸附管通过所述第一通孔与所述第二通孔吸附所述待蒸镀基板；
    所述吸附台板表面平整。
  2. 根据权利要求1所述的蒸镀装置，其中所述第一通孔与所述第二通孔均为多个，且均等间距设置。
  3. 根据权利要求1所述的蒸镀装置，其中所述副腔室还包括基板夹具以及掩膜板夹具；所述基板夹具用于安装所述待蒸镀基板，所述掩膜板夹具用于安装所述掩膜板。
  4. 根据权利要求3所述的蒸镀装置，其中所述基板夹具以及所述掩膜板夹具均可移动的设置在所述副腔室内。
  5. 根据权利要求1所述的蒸镀装置，其中所述固定件为磁铁。
  6. 根据权利要求1所述的蒸镀装置，其中所述副腔室内还设有泵，用于对所述副腔室进行抽真空处理。
  7. 根据权利1所述的蒸镀装置，其中所述固定件可移动的设置在所述吸附台板上。
  8. 根据权利要求1所述的蒸镀装置，其中所述掩膜板为金属掩膜板。
  9. 一种蒸镀装置，其包括主腔室以及至少一个通过阀门与所述主腔室相通的副腔室；其中，所述副腔室包括吸附台板、吸附管以及固定件，所述固定件设于所述吸附台板上方；
    对待蒸镀基板进行蒸镀时，所述吸附管通过所述固定件以及所述吸附台板将所述待蒸镀基板吸附至所述吸附台板上，将所述待蒸镀基板与掩膜板进行对位，并通过所述固定件固定所述待蒸镀基板与所述掩膜板。
  10. 根据权利要求9所述的蒸镀装置，其中所述吸附台板上设有第一通孔，所述固定件上设有第二通孔，所述第一通孔与所述第二通孔一一对应，以使得所述吸附管通过所述第一通孔与所述第二通孔吸附所述待蒸镀基板。
  11. 根据权利要求10所述的蒸镀装置，其中所述第一通孔与所述第二通孔均为多个，且均等间距设置。
  12. 根据权利要求9所述的蒸镀装置，其中所述吸附台板表面平整。
  13. 根据权利要求9所述的蒸镀装置，其中所述副腔室还包括基板夹具以及掩膜板夹具；所述基板夹具用于安装所述待蒸镀基板，所述掩膜板夹具用于安装所述掩膜板。
  14. 根据权利要求13所述的蒸镀装置，其中所述基板夹具以及所述掩膜板夹具均可移动的设置在所述副腔室内。
  15. 根据权利要求9所述的蒸镀装置，其中所述固定件为磁铁。
  16. 根据权利要求9所述的蒸镀装置，其中所述副腔室内还设有泵，用于对所述副腔室进行抽真空处理。
  17. 根据权利要求9所述的蒸镀装置，其中所述固定件可移动的设置在所述吸附台板上。
  18. 根据权利要求9所述的蒸镀装置，其中所述掩膜板为金属掩膜板。
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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106939408B (zh) * 2017-05-08 2019-09-13 武汉华星光电技术有限公司 一种蒸镀装置
CN110997974A (zh) * 2017-08-21 2020-04-10 堺显示器制品株式会社 蒸镀装置、蒸镀方法以及有机el显示装置的制造方法
CN107904566B (zh) * 2017-12-15 2025-04-11 京东方科技集团股份有限公司 一种蒸镀载板及蒸镀装置
JP7220030B2 (ja) * 2018-07-25 2023-02-09 株式会社ジャパンディスプレイ マスクユニットの製造装置
CN109055898B (zh) * 2018-09-29 2020-09-22 浙江环迪工贸有限公司 一种薄膜蒸镀装置
KR102755070B1 (ko) * 2019-11-20 2025-01-14 캐논 톡키 가부시키가이샤 성막장치
CN110993615A (zh) * 2019-11-28 2020-04-10 信利(仁寿)高端显示科技有限公司 一种tft基板的离子注入方法和制作方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0317259A (ja) * 1989-06-14 1991-01-25 Mitsubishi Electric Corp 物質蒸気発生装置
CN102011088A (zh) * 2010-12-01 2011-04-13 东莞宏威数码机械有限公司 掩膜板吸附结构及掩膜板贴合的方法
CN103981491A (zh) * 2014-04-30 2014-08-13 京东方科技集团股份有限公司 一种蒸镀装置
CN104120399A (zh) * 2014-08-04 2014-10-29 熊丹 真空镀膜装置及其真空镀膜方法
CN105514301A (zh) * 2016-01-21 2016-04-20 武汉华星光电技术有限公司 蒸镀装置及蒸镀方法
CN105648400A (zh) * 2014-12-03 2016-06-08 四川虹视显示技术有限公司 金属掩膜板对位装置
CN106939408A (zh) * 2017-05-08 2017-07-11 武汉华星光电技术有限公司 一种蒸镀装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4545504B2 (ja) * 2004-07-15 2010-09-15 株式会社半導体エネルギー研究所 膜形成方法、発光装置の作製方法
US7292427B1 (en) * 2004-10-12 2007-11-06 Kla-Tencor Technologies Corporation Pin lift chuck assembly for warped substrates
CN102686764B (zh) * 2009-12-28 2014-06-04 株式会社爱发科 成膜装置以及成膜方法
WO2012053402A1 (ja) * 2010-10-19 2012-04-26 シャープ株式会社 蒸着装置、蒸着方法、並びに、有機エレクトロルミネッセンス表示装置の製造方法
JP2014065959A (ja) * 2012-09-27 2014-04-17 Hitachi High-Technologies Corp 蒸着装置、および、蒸着装置における基板設置方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0317259A (ja) * 1989-06-14 1991-01-25 Mitsubishi Electric Corp 物質蒸気発生装置
CN102011088A (zh) * 2010-12-01 2011-04-13 东莞宏威数码机械有限公司 掩膜板吸附结构及掩膜板贴合的方法
CN103981491A (zh) * 2014-04-30 2014-08-13 京东方科技集团股份有限公司 一种蒸镀装置
CN104120399A (zh) * 2014-08-04 2014-10-29 熊丹 真空镀膜装置及其真空镀膜方法
CN105648400A (zh) * 2014-12-03 2016-06-08 四川虹视显示技术有限公司 金属掩膜板对位装置
CN105514301A (zh) * 2016-01-21 2016-04-20 武汉华星光电技术有限公司 蒸镀装置及蒸镀方法
CN106939408A (zh) * 2017-05-08 2017-07-11 武汉华星光电技术有限公司 一种蒸镀装置

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