WO2018201588A1 - 有机发光二极管组件及其制备方法、显示面板 - Google Patents

有机发光二极管组件及其制备方法、显示面板 Download PDF

Info

Publication number
WO2018201588A1
WO2018201588A1 PCT/CN2017/089461 CN2017089461W WO2018201588A1 WO 2018201588 A1 WO2018201588 A1 WO 2018201588A1 CN 2017089461 W CN2017089461 W CN 2017089461W WO 2018201588 A1 WO2018201588 A1 WO 2018201588A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light emitting
transport layer
cathode
electron transport
Prior art date
Application number
PCT/CN2017/089461
Other languages
English (en)
French (fr)
Inventor
张育楠
史婷
Original Assignee
深圳市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US15/552,779 priority Critical patent/US20180323398A1/en
Publication of WO2018201588A1 publication Critical patent/WO2018201588A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

Definitions

  • the present invention relates to the field of organic light emitting diode display, and in particular to an organic light emitting diode assembly, a method for fabricating the same, and a display panel.
  • OLED Organic Light Emitting Diodes
  • the technical problem to be solved by the present invention is to provide an organic light emitting diode assembly, a preparation method thereof, and a display panel, which can improve the color gamut and stability of the OLED device and prolong the service life of the OLED device.
  • another technical solution adopted by the present invention is to provide a method for fabricating an organic light emitting diode assembly, the method comprising: forming a cathode layer on a substrate; and backing the substrate with a cathode layer by inkjet printing Forming an electron transport layer including a quantum dot material; forming a light-emitting layer on a side opposite to the cathode layer of the electron transport layer; forming a hole transport layer on a side opposite to the cathode layer of the light-emitting layer; and using a vacuum evaporation method on the hole transport layer A metal layer having a high power function formed on the side opposite to the cathode layer serves as an anode layer.
  • an organic light emitting diode assembly including: an anode layer, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode which are sequentially disposed. a layer, wherein the anode layer is a metal layer of high power function; the electron transport layer comprises a quantum dot material.
  • another technical solution adopted by the present invention is to provide an organic light emitting diode display panel, which includes the above organic light emitting diode assembly.
  • the invention has the beneficial effects that, different from the prior art, the present invention provides an organic light emitting diode assembly using a metal layer with a high power function as an anode layer, and the metal chemical activity of these high power functions. Lower, can improve the stability of the electrode, and thus extend the OLED The life of the device.
  • the electron transport layer of the OLED assembly is doped with a quantum dot material, and the quantum dot luminescent material has a concentrated luminescence spectrum and high color purity, which can improve the color gamut of the OLED display.
  • FIG. 1 is a schematic structural view of an embodiment of an organic light emitting diode assembly of the present invention
  • FIG. 2 is a schematic structural view of an embodiment of an organic light emitting diode display panel of the present invention
  • FIG. 3 is a schematic structural view of an embodiment of an electronic device according to the present invention.
  • FIG. 4 is a schematic flow chart of an embodiment of a method for fabricating an organic light emitting diode device of the present invention.
  • FIG. 1 is a schematic structural view of an embodiment of an organic light emitting diode assembly of the present invention.
  • the organic light emitting diode assembly of this embodiment includes an anode layer 105, a hole transport layer 104, a light emitting layer 103, an electron transport layer 102, and a cathode layer 101 disposed in sequence; wherein the anode layer 105 is a metal layer of high power function;
  • the transport layer 102 includes quantum dot material.
  • the driving modes of OLED displays are classified into passive matrix driving (PM-OLED) and active matrix driving (AM-OLED); active driving is divided into amorphous silicon thin film transistors (a-Si TFT).
  • a-Si TFT Technology and low temperature poly-Si TFT (LTPS TFT) technology; TFT is further divided into a P-type TFT and an n-type TFT, wherein the P-type TFT provides holes to the OLED device through the drain electrode, and is connected to the anode of the OLED.
  • the n-type TFT supplies electrons to the OLED device through the drain electrode and is connected to the cathode of the OLED.
  • the TFT for controlling the OLED is usually fabricated on the anode side, which requires the TFT to be p-type, but the a-Si TFT having a simple and mature fabrication process has low carrier mobility in a-Si, and The hole mobility is much lower than the electron mobility, so the a-Si TFT can only be prepared as an n-type TFT, thereby limiting the application of the a-Si TFT in the OLED device.
  • the OLED device must be connected to the drain of the n-type TFT, that is, the cathode of the OLED device is connected to the drain of the n-type TFT, that is, the OLED device.
  • An inverted structure having a bottom electrode as a cathode. The use of an inverted OLED device structure enables an excellent performance n-type TFT to be applied to an AMOLED pixel circuit, which increases the design of the AMOLED driver circuit design and reduces the cost.
  • Pour The structured OLED device can be fabricated as a top emitting device with a top exit and a bottom emitting device with a bottom exit.
  • ITO glass Indium Tin Oxides (ITO) glass is often used as an anode in a commonly-structured OLED device, but in an inverted structure device, a metal electrode is generally selected as an anode, and an existing OLED device generally uses a low-power function metal ( For example, Mg, Ca, Li, and Cs are used as electrodes. However, the chemical reactivity of these metals is high, which makes the device performance easy to degrade and fail, and also increases the process control difficulty in mass production of OLED devices.
  • a metal electrode is generally selected as an anode
  • an existing OLED device generally uses a low-power function metal ( For example, Mg, Ca, Li, and Cs are used as electrodes.
  • Mg, Ca, Li, and Cs are used as electrodes.
  • the chemical reactivity of these metals is high, which makes the device performance easy to degrade and fail, and also increases the process control difficulty in mass production of OLED devices.
  • the cathode of the organic light emitting diode assembly of the present application is a bottom electrode adjacent to the substrate, that is, the organic light emitting diode assembly adopts an inverted structure in which the bottom electrode is a cathode, and a metal layer with a high power function is selected as the anode layer 105, for example: Gold (Au), silver (Ag), platinum (Pt), copper (Cu), iridium (Ir) or a mixture of the above metals, etc., these metals have relatively low activity, which can improve the stability of the electrode of the OLED device, further It is beneficial to improve the stability and service life of OLED devices.
  • Quantum Dot refers to a granular material whose three-dimensional size is on the order of nanometers, which obeys the quantum size effect, that is, its properties change regularly with the size; for example, the luminescence spectrum of QD is mainly determined by the particle size of QD. Control, the adjustment of the luminescence spectrum can be achieved by changing the particle size of the QD; therefore, the quantum dot luminescent material has the advantages of concentrated luminescence spectrum and high color purity.
  • the electron transport layer 102 in the organic light emitting diode module of the present application is doped with a quantum dot material, and the color gamut of the OLED display can be greatly improved by utilizing the characteristics of concentrated luminescence spectrum and high color purity.
  • the material of the quantum dot may be a II-VI quantum dot material, a III-V quantum dot material, a I-III-VI quantum dot material, or a mixture of different quantum dot materials; wherein, the II-VI group
  • the quantum dot material refers to a compound formed by the element of Group II and the element of Group VI, and the III-V quantum dot material and the I-III-VI quantum dot material are similar.
  • the quantum dot material may be ZnCdSe 2, CdSe, CdTe, CuInS 2, in one or more ZnCuInS 3.
  • nanoparticles of zinc oxide (ZnO) or titanium oxide (TiOx) may be used as the material of the electron transport layer 102; the mass content of the quantum dot material in the electron transport layer 102 is greater than 0 and less than or equal to 20%, For example, 0.5%, 5%, 10%, 15%, 20%, and the like.
  • the organic light emitting diode assembly of the present application further includes a hole injection.
  • the organic light emitting diode assembly of the present application further includes a hole injection. Into the layer, the electron injection layer, and the like.
  • FIG. 2 is a schematic structural diagram of an embodiment of an organic light emitting diode display panel according to the present invention.
  • the organic light emitting diode display panel of the embodiment includes: a substrate 201, a cover plate 203, and an organic light emitting diode assembly 202 between the substrate 201 and the cover plate 203; wherein the structure of the organic light emitting diode assembly 202 is the same as that in the above embodiment, I will not repeat them here.
  • the OLED display panel is used for a head-mounted display, an MP3 display, a television, a mobile phone display, and the like.
  • FIG. 3 is a schematic structural diagram of an embodiment of an electronic device according to the present invention.
  • the electronic device in this embodiment includes a controller 301 and an organic light emitting diode display panel 302.
  • the controller 301 is coupled to the organic light emitting diode display panel 302.
  • the organic light emitting diode display panel 302 is the same as in the above embodiment, and is no longer Narration.
  • Electronic devices are mobile phones, televisions, MP3s, VR glasses, and the like.
  • FIG. 4 is a schematic flow chart of an embodiment of a method for fabricating an organic light emitting diode device according to the present invention. The method includes:
  • ITO is selected as the cathode layer, and the cathode layer is formed by magnetron sputtering; the film thickness of the obtained cathode layer is 20 nm to 200 nm, for example, 20 nm, 50 nm, 100 nm, 150 nm, 200 nm, or the like. In other embodiments, other materials may be selected as the cathode, and other methods may be used to prepare the cathode layer.
  • S402 Forming an electron transport layer including a quantum dot material between the cathode layer and the light emitting layer.
  • ZnO is selected as the material of the electron transport layer
  • CdSe is selected as the quantum dot material to be doped in the electron transport layer
  • the electron transport layer is formed by the inkjet printing method.
  • a solution of a nanoparticle solution of ZnO and a solution of a CdSe quantum dot is separately prepared, and a suitable additive is added to the above solution to satisfy the requirements of inkjet printing, and the film thickness of the obtained electron transport layer is obtained by inkjet printing.
  • 1 nm to 100 nm for example, 1 nm, 10 nm, 40 nm, 70 nm, 100 nm, and the like.
  • other materials may also be selected as the electron transport layer material, and other methods may be used to prepare the electron transport layer.
  • poly 9,9-dioctylfluorene is selected as the light-emitting layer material, and the light-emitting layer is formed by an inkjet printing method, and the obtained light-emitting layer has a film thickness of 1 nm to 100 nm, for example, 1 nm, 15 nm, 50 nm, 80 nm, 100 nm. Wait.
  • other materials may also be selected as the light-emitting layer material, and other methods may be used to prepare the light-emitting layer.
  • molybdenum oxide MoO 3
  • a hole transport layer is formed by a vapor deposition film formation method, and the film thickness of the obtained hole transport layer is 0.5 nm to 50 nm, for example, 0.5 nm, 5 nm, 15 nm, 30 nm, 50 nm, and the like.
  • other materials may also be selected as the hole transport layer material, and other methods may be used to prepare the hole transport layer.
  • S405 forming a metal layer of a high power function as an anode layer.
  • silver (Ag) is used as the anode layer material, and the anode layer is formed by a vacuum evaporation method, and the obtained anode layer has a film thickness of 10 nm to 2000 nm, for example, 10 nm, 100 nm, 500 nm, 1200 nm, 2000 nm, or the like.
  • other materials may also be selected as the anode layer, and other methods may be used to prepare the anode layer.
  • the present invention provides an organic light emitting diode assembly using a metal layer of a high power function as an anode layer. These high power functions have low chemical reactivity and can improve electrode stability and thus extend The lifetime of OLED devices.
  • the electron transport layer of the OLED assembly is doped with a quantum dot material, and the quantum dot luminescent material has a concentrated luminescence spectrum and high color purity, which can improve the color gamut of the OLED display.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种有机发光二极管组件（202）及其制备方法、显示面板（302），涉及有机发光二极管显示领域。所述有机发光二极管组件（202）包括：依序设置的阳极层（105）、空穴传输层（104）、发光层（103）、电子传输层（102）和阴极层（101），其中，阳极层（105）为高功率函数的金属层；电子传输层（102）包括量子点材料。通过上述方式能够提高电极的稳定性，进而延长OLED器件的使用寿命，提高OLED显示器的色域。

Description

有机发光二极管组件及其制备方法、显示面板 【技术领域】
本发明涉及有机发光二极管显示领域，特别是涉及一种有机发光二极管组件及其制备方法、显示面板。
【背景技术】
有机发光二极管(Organic Light Emitting Diodes，OLED)作为新一代平板显示器件，具有自发光、广视角、对比度高、反应速度快、耗电低等优势，有望成为下一代主流平板显示技术，是目前平板显示技术中受到关注最多的技术之一。本申请的发明人在长期的研发中发现，现有技术中OLED器件还存在色域低、稳定性差、寿命短等问题。
【发明内容】
本发明主要解决的技术问题是提供一种有机发光二极管组件及其制备方法、显示面板，能够提高OLED器件的色域、稳定性，延长OLED器件的使用寿命。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种有机发光二极管组件的制备方法，该方法包括：在基板上形成阴极层；利用喷墨打印法在阴极层背对基板一侧形成包括量子点材料的电子传输层；在电子传输层背对阴极层一侧形成发光层；在发光层背对阴极层一侧形成空穴传输层；利用真空蒸镀法在空穴传输层背对阴极层一侧形成高功率函数的金属层作为阳极层。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种有机发光二极管组件，该有机发光二极管组件包括：依序设置的阳极层、空穴传输层、发光层、电子传输层和阴极层，其中，阳极层为高功率函数的金属层；电子传输层包括量子点材料。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种有机发光二极管显示面板，该显示面板包括上述有机发光二极管组件。
本发明的有益效果是：区别于现有技术的情况，本发明提供一种有机发光二极管组件，该有机发光二极管组件选用高功率函数的金属层作为阳极层，这些高功率函数的金属化学活泼性较低，能够提高电极的稳定性，进而延长OLED 器件的使用寿命。另外，该有机发光二极管组件的电子传输层掺杂有量子点材料，量子点发光材料的发光光谱集中，色纯度高，能够提高OLED显示器的色域。
【附图说明】
图1是本发明有机发光二极管组件一实施方式的结构示意图；
图2是本发明有机发光二极管显示面板一实施方式的结构示意图；
图3是本发明电子设备一实施方式的结构示意图；
图4是本发明有机发光二极管组件的制备方法一实施方式的流程示意图。
【具体实施方式】
为使本发明的目的、技术方案及效果更加清楚、明确，以下参照附图并举实施例对本发明进一步详细说明。
请参阅图1，图1是本发明有机发光二极管组件一实施方式的结构示意图。该实施方式中有机发光二极管组件包括依序设置的阳极层105、空穴传输层104、发光层103、电子传输层102和阴极层101；其中，阳极层105为高功率函数的金属层；电子传输层102包括量子点材料。
OLED显示器的驱动方式分为无源驱动(Passive Matrix Driving，PM-OLED)与有源驱动(Active Matrix Driving，AM-OLED)；有源驱动又分为非晶硅薄膜晶体管(a-Si TFT)技术和低温多晶硅(Low temperature poly-Si TFT，LTPS TFT)技术；TFT又分为P型TFT和n型TFT，其中，P型TFT通过漏电极向OLED器件提供空穴，与OLED的阳极相连，n型TFT通过漏电极向OLED器件提供电子，与OLED的阴极相连。
在有源驱动中，控制OLED的TFT通常制作于阳极一侧，这就要求TFT必须是p型，但是制作工艺简单成熟的a-Si TFT由于a-Si中载流子迁移率很低，且其空穴迁移率比电子迁移率低很多，因此a-Si TFT只能制备成n型TFT，进而限制了a-Si TFT在OLED器件中的应用。若想选用n型TFT控制OLED，为了保证其工作在饱和区，必须将OLED器件接到n型TFT的漏极，即将OLED器件的阴极与n型TFT的漏极相接，也就是说OLED器件具有底电极为阴极的倒置结构。采用倒置型OLED器件结构能够使性能优越的n型TFT应用于AMOLED像素电路，增加了AMOLED驱动电路设计的选择、且降低成本。倒 置结构的OLED器件可以制作成顶部出光的顶发射器件和底部出光的底发射器件。
在通常结构的OLED器件中常常用氧化铟锡(Indium Tin Oxides，ITO)玻璃作为阳极，但是在倒置结构的器件中，一般选用金属电极作为阳极，现有OLED器件一般选用低功率函数的金属(如Mg，Ca，Li，Cs)作为电极，然而这些金属的化学活泼性较高，使得器件性能容易退化失效，也增加了OLED器件量产时的工艺控制难度。
在一实施方式中，本申请有机发光二极管组件的阴极为靠近基板的底电极，即有机发光二极管组件采用底电极为阴极的倒置结构，并选用高功率函数的金属层作为阳极层105，例如：金(Au)、银(Ag)、铂(Pt)、铜(Cu)、铱(Ir)或上述金属的混合物等，这些金属的活泼性相对较低，能够提高OLED器件电极的稳定性，进一步有利于提高OLED器件的稳定性和使用寿命。
半导体材料从体相逐渐减小至一定临界尺寸(1～20纳米)后，其载流子的波动性变得显著，运动将受限，导致动能的增加，相应的电子结构从体相连续的能级结构变成准分裂的不连续，这一现象称作量子尺寸效应。量子点(Quantum Dot，QD)是指三维尺寸均在纳米量级的颗粒材料，其遵守量子尺寸效应，即其性质随尺寸呈现规律性变化；例如QD的发光光谱主要由QD的粒径大小来控制，可以通过改变QD的粒径来实现发光光谱的调节；因此，量子点发光材料具有发光光谱集中，色纯度高的优点。
在一实施方式中，本申请的有机发光二极管组件中的电子传输层102掺杂有量子点材料，利用其发光光谱集中，色纯度高的性能，能够大幅度提高OLED显示器的色域。
其中，量子点的材质可以是II-VI族量子点材料，III-V族量子点材料，I-III-VI族量子点材料，还可以是不同量子点材料的混合物；其中，II-VI族量子点材料是指，第II族的元素与第VI族的元素所形成的化合物，III-V族量子点材料和I-III-VI族量子点材料则同理。具体地，量子点材料可以是ZnCdSe2，CdSe，CdTe，CuInS2，ZnCuInS3中的一种或多种。
在一实施方式中，可以采用氧化锌(ZnO)或氧化钛(TiOx)的纳米粒子作为电子传输层102材料；量子点材料在电子传输层102中的质量含量为大于0且小于等于20％，例如0.5％、5％、10％、15％、20％等。
可选地，在其他实施方式中，本申请的有机发光二极管组件还包括空穴注 入层，电子注入层等。
请参阅图2，图2是本发明有机发光二极管显示面板一实施方式的结构示意图。该实施方式中有机发光二极管显示面板包括：基板201、盖板203以及位于基板201与盖板203之间的有机发光二极管组件202；其中有机发光二极管组件202的结构与上述实施例中的相同，在此不再赘述。有机发光二极管显示面板用于头戴显示器、MP3显示屏、电视、手机显示屏等。
请参阅图3，图3是本发明电子设备一实施方式的结构示意图。该实施方式中电子设备包括：控制器301及有机发光二极管显示面板302，控制器301耦接有机发光二极管显示面板302；其中有机发光二极管显示面板302与上述实施例中的相同，在此不再赘述。电子设备为手机、电视、MP3、VR眼镜等。
请参阅图4，图4是本发明有机发光二极管组件的制备方法一实施方式的流程示意图。该方法包括：
S401：在基板上形成阴极层。
其中，选用ITO作为阴极层，并利用磁控溅射法形成阴极层；所得阴极层的膜厚度为20nm～200nm，例如20nm、50nm、100nm、150nm、200nm等。在其他实施方式中，也可以选用其他材料作为阴极，也可以选用其他方法制备阴极层。
S402：在阴极层与发光层之间形成包括量子点材料的电子传输层。
其中，选用ZnO作为电子传输层材料，选用CdSe作为量子点材料掺杂在电子传输层中，利用喷墨打印法形成电子传输层。具体地，分别制备ZnO的纳米颗粒溶液和CdSe量子点的溶液，并向上述溶液中加入合适的添加剂使其满足喷墨打印的要求，通过喷墨打印成膜，所得电子传输层的膜厚度为1nm～100nm，例如1nm、10nm、40nm、70nm、100nm等。在其他实施方式中，也可以选用其他材料作为电子传输层材料，也可以选用其他方法制备电子传输层。
S403：形成发光层。
其中，选用聚9，9-二辛基芴(PFO)作为发光层材料，利用喷墨打印法形成发光层，所得发光层的膜厚度为1nm～100nm，例如1nm、15nm、50nm、80nm、100nm等。在其他实施方式中，也可以选用其他材料作为发光层材料，也可以选用其他方法制备发光层。
S404：在发光层与阳极层之间形成空穴传输层。
其中，选用氧化钼(MoO3)作为空穴传输层材料，利用蒸镀成膜法形成空 穴传输层，所得空穴传输层的膜厚度为0.5nm～50nm，例如0.5nm、5nm、15nm、30nm、50nm等。在其他实施方式中，也可以选用其他材料作为空穴传输层材料，也可以选用其他方法制备空穴传输层。
S405：形成高功率函数的金属层作为阳极层。
其中，选用银(Ag)作为阳极层材料，利用真空蒸镀方法形成阳极层，所得阳极层的膜厚度为10nm～2000nm，例如10nm、100nm、500nm、1200nm、2000nm等。在其他实施方式中，也可以选用其他材料作为阳极层，也可以选用其他方法制备阳极层。
综上，本发明提供一种有机发光二极管组件，该有机发光二极管组件选用高功率函数的金属层作为阳极层，这些高功率函数的金属化学活泼性较低，能够提高电极的稳定性，进而延长OLED器件的使用寿命。另外，该有机发光二极管组件的电子传输层掺杂有量子点材料，量子点发光材料的发光光谱集中，色纯度高，能够提高OLED显示器的色域。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (17)

  1. 一种有机发光二极管组件的制备方法，其中，包括：
    在基板上形成阴极层；
    利用喷墨打印法在所述阴极层背对所述基板一侧形成包括量子点材料的电子传输层；
    在所述电子传输层背对所述阴极层一侧形成发光层；
    在所述发光层背对所述阴极层一侧形成空穴传输层；
    利用真空蒸镀法在所述空穴传输层背对所述阴极层一侧形成高功率函数的金属层作为阳极层。
  2. 根据权利要求1所述的方法，其中，所述在基板上形成阴极层包括：利用磁控溅射法形成所述阴极层。
  3. 根据权利要求1所述的方法，其中，所述阴极层的膜厚度为20nm～200nm。
  4. 根据权利要求1所述的方法，其中，所述电子传输层的膜厚度为1nm～100nm。
  5. 根据权利要求1所述的方法，其中，所述在所述电子传输层背对所述阴极层一侧形成发光层包括：利用喷墨打印法形成所述发光层。
  6. 根据权利要求1所述的方法，其中，所述发光层的膜厚度为1nm～100nm。
  7. 根据权利要求1所述的方法，其中，所述在所述发光层背对所述阴极层一侧形成空穴传输层包括：利用蒸镀成膜法形成所述空穴传输层。
  8. 根据权利要求1所述的方法，其中，所述空穴传输层的膜厚度为0.5nm～50nm。
  9. 根据权利要求1所述的方法，其中，所述阳极层的膜厚度为10nm～2000nm。
  10. 一种有机发光二极管组件，包括依序设置的阳极层、空穴传输层、发光层、电子传输层和阴极层，其中，
    所述阳极层为高功率函数的金属层；
    所述电子传输层包括量子点材料。
  11. 根据权利要求10所述的组件，其中，所述高功率函数的金属层为银、金层。
  12. 根据权利要求10所述的组件，其中，所述量子点材料在所述电子传输层 中的质量含量为大于0且小于等于20％。
  13. 根据权利要求10所述的组件，其中，所述阴极为靠近基板的底电极。
  14. 一种有机发光二极管显示面板，其中，包括：基板、盖板以及位于所述基板与所述盖板之间的有机发光二极管组件；
    其中，所述有机发光二极管组件包括依序设置的阳极层、空穴传输层、发光层、电子传输层和阴极层，其中，所述阳极层为高功率函数的金属层，所述电子传输层包括量子点材料。
  15. 根据权利要求14所述的显示面板，其中，所述高功率函数的金属层为银、金层。
  16. 根据权利要求14所述的显示面板，其中，所述量子点材料在所述电子传输层中的质量含量为大于0且小于等于20％。
  17. 根据权利要求14所述的显示面板，其中，所述阴极为靠近基板的底电极。
PCT/CN2017/089461 2017-05-02 2017-06-22 有机发光二极管组件及其制备方法、显示面板 WO2018201588A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/552,779 US20180323398A1 (en) 2017-05-02 2017-06-22 Organic light emitting diode assembly, manufacturing method thereof, and display panel

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710302070.6A CN106972110A (zh) 2017-05-02 2017-05-02 有机发光二极管组件及其制备方法、显示面板和电子设备
CN201710302070.6 2017-05-02

Publications (1)

Publication Number Publication Date
WO2018201588A1 true WO2018201588A1 (zh) 2018-11-08

Family

ID=59331903

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/089461 WO2018201588A1 (zh) 2017-05-02 2017-06-22 有机发光二极管组件及其制备方法、显示面板

Country Status (2)

Country Link
CN (1) CN106972110A (zh)
WO (1) WO2018201588A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113130788B (zh) * 2019-12-31 2022-04-12 Tcl科技集团股份有限公司 复合材料、薄膜、量子点发光二极管
CN115347127A (zh) * 2021-05-14 2022-11-15 Tcl科技集团股份有限公司 量子点发光器件及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102903854A (zh) * 2012-09-27 2013-01-30 电子科技大学 一种白光有机电致发光器件及其制备方法
US20130087827A1 (en) * 2011-10-11 2013-04-11 Hon Hai Precision Industry Co., Ltd. Organic light-emitting diode and method of making same
CN103165816A (zh) * 2011-12-14 2013-06-19 海洋王照明科技股份有限公司 一种倒置顶发射有机电致发光二极管及其制备方法
CN103730584A (zh) * 2013-12-27 2014-04-16 北京京东方光电科技有限公司 一种显示面板及显示装置
CN105845836A (zh) * 2016-04-07 2016-08-10 上海大学 倒置白光量子点薄膜电致发光器件及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103311446A (zh) * 2012-03-06 2013-09-18 海洋王照明科技股份有限公司 倒置顶发射有机电致发光器件及其制备方法
CN103000813B (zh) * 2012-10-23 2015-09-09 京东方科技集团股份有限公司 发光二极管及其制备方法
CN106098956A (zh) * 2016-07-14 2016-11-09 Tcl集团股份有限公司 一种qled及其制备方法
CN106450013B (zh) * 2016-10-11 2019-11-26 Tcl集团股份有限公司 Qled器件

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130087827A1 (en) * 2011-10-11 2013-04-11 Hon Hai Precision Industry Co., Ltd. Organic light-emitting diode and method of making same
CN103165816A (zh) * 2011-12-14 2013-06-19 海洋王照明科技股份有限公司 一种倒置顶发射有机电致发光二极管及其制备方法
CN102903854A (zh) * 2012-09-27 2013-01-30 电子科技大学 一种白光有机电致发光器件及其制备方法
CN103730584A (zh) * 2013-12-27 2014-04-16 北京京东方光电科技有限公司 一种显示面板及显示装置
CN105845836A (zh) * 2016-04-07 2016-08-10 上海大学 倒置白光量子点薄膜电致发光器件及其制备方法

Also Published As

Publication number Publication date
CN106972110A (zh) 2017-07-21

Similar Documents

Publication Publication Date Title
CN106972115B (zh) Oled显示面板的制作方法及oled显示面板
TW577176B (en) Structure of thin-film transistor, and the manufacturing method thereof
WO2017161615A1 (zh) 量子点发光器件及其制备方法及液晶显示装置
WO2017160410A1 (en) Quantum dot spacing for high efficiency quantum dot led displays
WO2019209411A1 (en) Micro light-emitting diode display driver architecture and pixel structure
US10566390B2 (en) Series connected quantum dot light-emitting device, panel and display device
JP2007073311A (ja) 発光素子
CN103400943B (zh) 有源矩阵有机发光二极管面板及其制作方法
US11489131B2 (en) Display panel and method of manufacturing thereof
WO2019148748A1 (zh) 一种显示面板和显示装置
Li et al. 80‐1: Invited Paper: Developing AMQLED technology for display applications
JP2013249537A (ja) 酸化物半導体スパッタリング用ターゲット、これを用いた薄膜トランジスタの製造方法
CN109545990B (zh) 电致发光器件及其制备方法和应用
WO2018201588A1 (zh) 有机发光二极管组件及其制备方法、显示面板
Baek et al. Optimum Design Configuration of Thin‐Film Transistors and Quantum‐Dot Light‐Emitting Diodes for Active‐Matrix Displays
US8304979B2 (en) Light emitting device having inorganic luminescent particles in inorganic hole transport material
US20180323398A1 (en) Organic light emitting diode assembly, manufacturing method thereof, and display panel
Kim et al. 80‐2: AMQLED Display with Solution‐Processed Oxide TFT Backplane
US11152588B2 (en) OLED light emitting device and OLED display device having a smoothing layer
JP2014103113A (ja) 有機発光素子用基板、その製造方法、及びこれを具備する有機発光装置
KR101405257B1 (ko) 산화물 반도체 스퍼터링용 타겟, 및 이를 이용한 박막 트랜지스터 제조방법
CN103943754A (zh) 一种电致发光器件及其制备方法和显示装置
WO2024044873A1 (zh) 发光器件及其制备方法、显示面板、显示装置
KR101893992B1 (ko) 5성분계 물질로 이루어진 액티브층을 갖는 박막 트랜지스터 및 이를 구비하는 디스플레이 장치
CN106981578A (zh) 一种倒置结构有机发光二极管及其制备方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 15552779

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17908477

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17908477

Country of ref document: EP

Kind code of ref document: A1