WO2018199373A1 - Installation de traitement de gaz nocif utilisant un plasma micro-onde - Google Patents

Installation de traitement de gaz nocif utilisant un plasma micro-onde Download PDF

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Publication number
WO2018199373A1
WO2018199373A1 PCT/KR2017/004869 KR2017004869W WO2018199373A1 WO 2018199373 A1 WO2018199373 A1 WO 2018199373A1 KR 2017004869 W KR2017004869 W KR 2017004869W WO 2018199373 A1 WO2018199373 A1 WO 2018199373A1
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WO
WIPO (PCT)
Prior art keywords
plasma discharge
microwave
plasma
unit
harmful gas
Prior art date
Application number
PCT/KR2017/004869
Other languages
English (en)
Korean (ko)
Inventor
강경두
구민
이성룡
Original Assignee
주식회사 클린팩터스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020170057985A external-priority patent/KR101913721B1/ko
Application filed by 주식회사 클린팩터스 filed Critical 주식회사 클린팩터스
Publication of WO2018199373A1 publication Critical patent/WO2018199373A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

Definitions

  • the present invention relates to a noxious gas treatment facility using microwave plasma, and more particularly, by inducing a uniform plasma discharge in the plasma discharge space, it is possible to improve the removal rate of noxious substances in the noxious gas discharged from the process chamber and reduce costs. It relates to a harmful gas treatment facility using a microwave plasma that can be reduced.
  • gases called PFCs perfluorocarbons
  • CF4 perfluorocarbons
  • SF6 perfluorocarbons
  • C3F8 perfluorocarbons
  • a vacuum pump is installed to make the process chambers in a vacuum state, and to generate plasma discharge using microwaves, and to process the harmful gas using the same.
  • the technology to purify the harmful gas through the harmful gas treatment facility and release it to the atmosphere has been developed.
  • the conventional harmful gas treatment facility using the microwave plasma has a problem that the plasma is not uniformly and efficiently supplied to the plasma discharge space, the plasma discharge efficiency is lowered and the removal rate of the harmful substances is lowered.
  • the present invention is to provide a uniform and efficient microwave supply in the plasma discharge space to achieve a uniform plasma discharge to increase the removal rate of harmful substances in the harmful gas discharged from the process chamber, the microwave plasma can reduce the cost
  • An object of the present invention is to provide a hazardous gas treatment facility.
  • the present invention is a harmful gas treatment facility using a microwave plasma for processing harmful gas discharged from the process chamber, the microwave generating unit for generating a microwave, the microwave for transmitting and supplying the microwave generated in the microwave generating unit
  • Plasma discharge is installed in a pipe through which the harmful gas discharged from the transmission unit and the process chamber flows, and receives the microwaves from the microwave transmission unit to generate plasma discharge therein to decompose harmful substances in the harmful gas.
  • the plasma discharge unit is installed between the first pipe through which the harmful gas discharged from the process chamber flows and the second pipe through which the harmful gas flows toward the vacuum pump, In communication with one pipe and the second pipe
  • a plasma discharge chamber having a cylindrical plasma discharge space through which the noxious gas passes, and an inner space installed in the plasma discharge chamber to surround the outside of the plasma discharge space, and into which the microwave is introduced, are formed.
  • An antenna unit having a plurality of slots formed to be spaced apart from each other toward the plasma discharge space to release the microwaves introduced into the plasma discharge space, and installed in the plasma discharge chamber inside the antenna unit for the plasma discharge; It provides a harmful gas treatment facility using a microwave plasma including a shielding member for preventing the leakage of ions or electrons to the outside.
  • the harmful gas treatment facility using the microwave plasma according to the present invention has the following effects.
  • the antenna unit is formed to surround the plasma discharge space, and microwaves are supplied to the plasma discharge space through a plurality of slots, thereby achieving uniform and efficient plasma discharge in the plasma discharge space, thereby improving the treatment efficiency of harmful gases. Not only can it reduce costs, it is economical.
  • an optimal uniform distribution of incidence in the plasma discharge space can be obtained through the position adjusting unit which can adjust the position of the slot.
  • plasma discharge is started by reinforcing interference according to the direction of harmful gas flow
  • plasma discharge is spread by the fine particles in which harmful substances are decomposed, so that the decomposition power of harmful substances in harmful gases may be further improved.
  • FIG. 1 is a block diagram showing the configuration of a noxious gas treatment facility using a microwave plasma according to an embodiment of the present invention.
  • FIG. 2 is a front sectional view showing the configuration of the plasma discharge unit of FIG.
  • FIG. 3 is a plan sectional view taken along line III-III of FIG. 2.
  • FIG. 4 is a diagram illustrating an energy field with respect to a slot position when plasma discharge is generated by the antenna unit of FIG. 2.
  • FIG. 5 is a plan sectional view taken along the line VV of FIG. 2.
  • FIG. 6 is a front sectional view showing another embodiment of the antenna unit in the plasma discharge unit of FIG.
  • FIG. 7 is a perspective view illustrating the antenna unit of FIG. 2.
  • FIG. 8 is a perspective view illustrating another embodiment of the antenna unit of FIG. 7.
  • a noxious gas treatment facility (hereinafter referred to as a “hazardous gas treatment facility”) using microwave plasma according to an embodiment of the present invention is to treat noxious gas discharged from the process chamber 10.
  • the process chamber 10 is a process in which a variety of work processes of a semiconductor or a display is performed, and a process in which ashing, deposition, etching, photography, cleaning, and nitriding is performed, and various process gases and reaction gases
  • This process gas contains harmful substances such as carbon tetrafluoride (CF4) and nitrogen trifluoride (NF3).
  • Reference numeral 30 denotes a scrubbing facility.
  • the microwave generating unit 100 may include a configuration of a known magnetron as generating microwaves, and a detailed description thereof will be omitted.
  • the microwave transmitter 200 serves to transfer and supply microwaves generated by the microwave generator 100, and is connected to the plasma discharge unit 300 to connect the microwaves to the plasma discharge unit ( 300 feed to feed.
  • the microwave transmitter 200 may apply a coaxial cable or a waveguide.
  • the plasma discharge unit 300 is installed in a pipe through which the noxious gas discharged from the process chamber 10 flows, and receives the microwaves from the microwave transmitter 200 to generate plasma discharge therein. It serves to decompose harmful substances in the harmful gas.
  • the plasma discharge unit 300 is coupled to a vacuum chamber or a foreline, and includes a plasma discharge chamber 310, an antenna unit 320, and a shielding member 330. .
  • the plasma discharge chamber 310 has a first pipe 41 through which the harmful gas discharged from the process chamber 10 flows and a second pipe 42 through which the harmful gas flows toward the vacuum pump 20. It is installed between the first pipe 41 and the second pipe 42 in communication with the noxious gas passes through the plasma discharge space (1) is formed by the reinforcement interference is formed therein It is.
  • the plasma discharge space 1 may be formed in a cylindrical shape as shown in the drawing, but this may be in various forms such as a rectangular shape in one embodiment, the shape of the plasma discharge chamber 310 and the first Of course, it can be selected in various ways in consideration of the connection structure, the discharge characteristics of the pipe 41 and the second pipe (42).
  • the antenna unit 320 is installed in the plasma discharge chamber 310, and when microwaves are introduced from the microwave transmitter 200, the antenna unit 320 emits microwaves into the plasma discharge space 1 so that the plasma discharge space ( Plasma discharge is performed in 1).
  • the antenna unit 320 includes a tubular antenna unit body 321.
  • the antenna unit body 321 is disposed to surround the outside of the plasma discharge space 1 to correspond to a flow path of harmful gas when coupled to a foreline or a vacuum chamber. It is formed in an annular shape so as to enclose it so that microwaves are uniformly transferred to the plasma discharge space 1 therein.
  • the antenna unit body 321 has an internal space 322 into which the microwave is introduced, and an inlet 324 for introducing the microwave into the outer wall.
  • the antenna unit body 321 is formed with a plurality of slots 323 in which the microwaves of the internal space 322 are emitted on the inner wall facing the plasma discharge space 1.
  • the plurality of slots 323 are formed to be spaced apart from each other toward the plasma discharge space 1 to uniformly discharge the microwaves introduced into the plasma discharge space 1. Descriptions including various details of the slots 323 and various embodiments will be described later.
  • the shielding member 330 is installed in the plasma discharge chamber 310 so that the outer circumferential surface is spaced apart from the inner surface of the antenna unit 320 in a tubular shape, and ions or electrons for the plasma discharge leak to the outside. It prevents it from becoming.
  • the shielding member 330 is formed to correspond to the plasma discharge space 1, and should be able to transmit the microwave, so that various materials can be applied if it can achieve the above purpose, such as quartz (quartz) or ceramic material Do.
  • a lower end of the shielding member 330 may be fixed to a fitting portion 311 formed in the plasma discharge chamber 310 to fix its position.
  • the shielding member 330 is positioned in the plasma discharge chamber 310 such that the upper and lower ends of the shielding member 330 are tightly fitted to the inner surface of the plasma discharge chamber 310.
  • you can fix a variety of configurations are possible.
  • the plasma discharge unit 300 may include a tuner (not shown) installed in the plasma discharge chamber 310 to induce an optimal uniform distribution of incidence.
  • the tuner may be applied to various types such as inserting another dielectric material into the microwave or changing impedance by adjusting a space.
  • FIG. 4 illustrates an internal energy field (E-field) through which microwaves are transmitted through the slot 323.
  • E-field an internal energy field
  • the optimum uniform incidence distribution can be induced through the above-described tuner.
  • this has a problem in that manufacturing hassle and manufacturing cost increase to install a separate tuner, there is also a difficulty in the operation for the tuner control.
  • the plasma discharge unit 300 may allow the user to directly and intuitively adjust the position of the slot 323 through the position adjusting unit 340, thereby replacing the role of the tuner.
  • the antenna unit body 321 is coupled to rotate in the circumferential direction with respect to the plasma discharge chamber (310).
  • the position adjusting unit 340 is fixedly coupled to the antenna unit body 321 may rotate the antenna unit body 321 along the circumferential direction according to the operator's operation.
  • the user may change the positions of the slots 323 by rotating the antenna unit 320 along the circumferential direction through the position adjusting unit 340.
  • the position adjusting unit 340 includes a rotation lever 342 coupled to the antenna unit body 321.
  • One end of the rotary lever 342 is coupled to the antenna unit 320, and the other end of the rotary lever 342 passes through an arc-shaped positioning hole 344 formed in the plasma discharge chamber 310, and can be operated by an operator from the outside. It is exposed to the outside so that the user can rotate the antenna unit 320 by holding the other end.
  • the positioning hole 344 is preferably formed in consideration of this, since the microwave does not leak to the outside when the size is 1/4 or less of the microwave wavelength.
  • the noxious gas treatment facility may obtain an optimal uniform incident distribution in the plasma discharge space 1 by adjusting the position of the slot 323 through the position adjusting unit 340.
  • FIG. 6 is a view showing another embodiment of the antenna unit 320b.
  • the antenna unit 320b is not an antenna unit body 321 is formed as an integral tube, as shown in Figure 2, the antenna is located inside and outside the plasma discharge chamber 310, respectively separated from the inside The sub body 321a is included.
  • the antenna unit body 321a is located in the plasma discharge chamber 310 but has an inner wall 3212 located inward with respect to the plasma discharge space 1, and the inner wall 322 is formed. And an outer wall 3211 positioned on the outside to be spaced apart from the 3212.
  • the inner wall 3212 is erected in the plasma discharge chamber 310 in a cylindrical tube shape so as to surround the cylindrical plasma discharge space (1), the top and bottom are in close contact with the inner surface of the plasma discharge chamber (310). It is fitted.
  • the inner wall 3212 has a plurality of slots 323 formed therethrough to allow the introduced microwaves to be discharged into the plasma discharge space.
  • the outer wall 3211 is a cylindrical tube shape having a diameter larger than that of the inner wall 3212, and is spaced apart from the inner wall 3212 so as to stand in the plasma discharge chamber 310. 310 is in close contact with the inner surface.
  • the outer wall 3211 has an inlet 324 through which the microwave is supplied from the microwave transmitter 200.
  • the inlet 324 may be formed in one or a plurality, and may be formed in the middle of the outer wall 3211 or at the top or the bottom thereof as shown in the drawing, and the shape, number, and position thereof may effectively introduce microwaves. This can be done in various ways.
  • one end of the rotary lever 342a of the position adjusting unit 340a is fixedly coupled to the inner wall 3212 and the middle part of the rotary lever 342a is exposed from the plasma discharge chamber 310.
  • the slots 323 and 323a of the antenna units 320 and 320a will be described.
  • the antenna portions 320 and 320a of FIGS. 7 and 8 are shown in a straight tubular shape, but the antenna portions 320 and 320a are partially enlarged to show a straight line and the shape of the slots 323 and 323a. It is intended to make the diagram easier to understand.
  • the slots 323 are spaced apart from each other at equal intervals along the circumferential direction (lengthwise in the drawing) on the inner inner circumferential surface of the antenna unit body 321.
  • the slots 323 are formed to the inner upper end and the lower end of the antenna unit body 321, and are formed in a direction inclined with respect to the flow direction of the harmful gas.
  • the inclination angle of the slot 323 may be varied in consideration of the plasma discharge space 1 and the energy field.
  • the slots 323a are formed in a direction perpendicular to the flow direction of the noxious gas.
  • the slots 323a have a set length and are positioned in a zigzag manner different in height with respect to the flow direction of the noxious gas.
  • the length of the slot 323a may be varied in consideration of the plasma discharge space 1 and the energy field.
  • the slots 323 may be formed in a direction parallel to the flow direction of the harmful gas may be spaced apart along the circumferential direction of the antenna unit body 321.
  • the noxious gas treatment facility forms antenna units 320, 320a, and 320b to surround the plasma discharge space 1, and a plurality of slots 323, 323a are formed therein so that the microwave is discharged from the plasma discharge space 1.
  • According to the present invention can be used in the treatment facilities of harmful gases generated during the manufacture of semiconductors or displays.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Treating Waste Gases (AREA)
  • Plasma Technology (AREA)

Abstract

La présente invention concerne une installation de traitement de gaz nocif utilisant un plasma micro-onde, comprenant : une unité de génération de micro-ondes ; une unité de transmission de micro-ondes pour transmettre et fournir des micro-ondes générées dans l'unité de génération de micro-ondes ; et une unité de décharge de plasma qui est disposée dans un tuyau à travers lequel s'écoule un gaz nocif déchargé à partir d'une chambre de traitement, et qui reçoit les micro-ondes provenant de l'unité de transmission de micro-ondes de façon à générer une décharge de plasma à l'intérieur de celle-ci, ce qui permet de décomposer des matières dangereuses à l'intérieur du gaz nocif, l'unité de décharge de plasma comprenant : une chambre de décharge de plasma ayant un espace de décharge de plasma cylindrique à travers lequel passe le gaz nocif ; une unité d'antenne qui est disposée dans la chambre de décharge de plasma et agencée pour englober l'extérieur de l'espace de décharge de plasma, et qui a une pluralité de fentes pour décharger, vers l'espace de décharge de plasma, une micro-onde introduite à l'intérieur de celle-ci ; et un élément de blindage disposé dans la chambre de décharge de plasma interne de l'unité d'antenne. Par conséquent, une unité d'antenne est formée pour englober un espace de décharge de plasma et des micro-ondes sont fournies à l'espace de décharge de plasma à travers une pluralité de fentes, de telle sorte qu'une décharge de plasma uniforme et efficace soit formée à l'intérieur de l'espace de décharge de plasma, ce qui permet d'améliorer l'efficacité de traitement de gaz nocifs et de réduire les coûts de manière à être économique.
PCT/KR2017/004869 2017-04-26 2017-05-11 Installation de traitement de gaz nocif utilisant un plasma micro-onde WO2018199373A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2017-0053348 2017-04-26
KR20170053348 2017-04-26
KR1020170057985A KR101913721B1 (ko) 2017-04-26 2017-05-10 마이크로웨이브 플라즈마를 이용한 유해가스 처리설비
KR10-2017-0057985 2017-05-10

Publications (1)

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WO2018199373A1 true WO2018199373A1 (fr) 2018-11-01

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5537004A (en) * 1993-03-06 1996-07-16 Tokyo Electron Limited Low frequency electron cyclotron resonance plasma processor
JP2000299199A (ja) * 1999-04-13 2000-10-24 Plasma System Corp プラズマ発生装置およびプラズマ処理装置
KR100579760B1 (ko) * 2004-07-30 2006-05-15 전북대학교산학협력단 마이크로 웨이브를 이용한 휘발성 유기화합물 흡탈착장치
KR20130048577A (ko) * 2011-11-02 2013-05-10 (주)트리플코어스코리아 플라즈마 반응기 및 이를 이용한 가스스크러버
KR101611255B1 (ko) * 2015-11-24 2016-04-11 코어 플라즈마 테크놀로지 아이엔씨 유해가스 처리설비

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5537004A (en) * 1993-03-06 1996-07-16 Tokyo Electron Limited Low frequency electron cyclotron resonance plasma processor
JP2000299199A (ja) * 1999-04-13 2000-10-24 Plasma System Corp プラズマ発生装置およびプラズマ処理装置
KR100579760B1 (ko) * 2004-07-30 2006-05-15 전북대학교산학협력단 마이크로 웨이브를 이용한 휘발성 유기화합물 흡탈착장치
KR20130048577A (ko) * 2011-11-02 2013-05-10 (주)트리플코어스코리아 플라즈마 반응기 및 이를 이용한 가스스크러버
KR101611255B1 (ko) * 2015-11-24 2016-04-11 코어 플라즈마 테크놀로지 아이엔씨 유해가스 처리설비

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