WO2018194548A1 - Détection de domaines magnétiques dans des matériaux magnétiques - Google Patents

Détection de domaines magnétiques dans des matériaux magnétiques Download PDF

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Publication number
WO2018194548A1
WO2018194548A1 PCT/US2017/027949 US2017027949W WO2018194548A1 WO 2018194548 A1 WO2018194548 A1 WO 2018194548A1 US 2017027949 W US2017027949 W US 2017027949W WO 2018194548 A1 WO2018194548 A1 WO 2018194548A1
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Prior art keywords
magnetic
spin
sensing
measurement head
spin valve
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PCT/US2017/027949
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English (en)
Inventor
Dmitri E. Nikonov
Sasikanth Manipatruni
Ian A. Young
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Intel Corporation
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Priority to PCT/US2017/027949 priority Critical patent/WO2018194548A1/fr
Publication of WO2018194548A1 publication Critical patent/WO2018194548A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/038—Measuring direction or magnitude of magnetic fields or magnetic flux using permanent magnets, e.g. balances, torsion devices
    • G01R33/0385—Measuring direction or magnitude of magnetic fields or magnetic flux using permanent magnets, e.g. balances, torsion devices in relation with magnetic force measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors

Definitions

  • Embodiments described herein generally relate to the field of electronic devices and, more particularly, sensing of magnetic domains in magnetic materials.
  • CMOS Complementary Metal-Oxide
  • MOSFETs Metal- Oxide-Semiconductor Field-Effect Transistors
  • MESO logic requires means to analyze magnetic materials utilized in the fabrication of such logic.
  • conventional technology does not allow for efficient and effective sensing of magnetic states in materials, thus complicating the development of new logic devices.
  • Figure 1 is an illustration of a system for sensing of magnetic materials according to an embodiment
  • Figure 2 is an illustration of a pattern of magnetization in a magnetic material with magnetic domains and domain walls
  • Figure 3 is an illustration of domain walls for magnetic domains
  • Figure 4 is an illustration of a conventional mechanism including a magnetic force microscope for sensing of magnetic materials
  • Figures 5A and 5B are illustrations of a magnetic sensing apparatus including a magnetic read head according to an embodiment
  • Figure 6 is an illustration of a non-local spin valve for a magnetic sensing element according to an embodiment
  • Figures 7A and 7B are illustrations of a measurement head for a single axis magnetic sensing system including a single spin valve with angle control according to an embodiment
  • Figure 8 is an illustration of a measurement head for a multiple axis magnetic sensing system including multiple spin valves according to an embodiment
  • Figure 9 is an illustration of a process for sensing of magnetic materials according to an embodiment.
  • Embodiments described herein are generally directed to sensing of magnetic domains in magnetic materials.
  • Magnetic domain refers to a region within a magnetic material in which the magnetization is approximately in a uniform direction, i.e., the magnetic moments of the atoms in the region are aligned with each other in a particular direction.
  • Domain wall refers to an interface or boundary region in a magnetic material between magnetic domains.
  • domain wall includes any type of interface between magnetic domains, including Block, Neel and intermediate domain walls, which are illustrated in Figure 3 as described below.
  • CMOS complementary metal-oxide-semiconductor
  • MEO Magneto-Electric Spin Orbit
  • PMA perpendicular magnetic anisotropy
  • optical methods such as stimulated Brillouin scattering (SBS) utilizing the interaction of light wave and material waves in a medium
  • SBS stimulated Brillouin scattering
  • magnetic force microscopy is capable of registering the out-of-plane direction of magnetization.
  • magnetic force microscopy has a small image field that is determined by possible piezoelectric shifts of a cantilever, and is not capable of detecting magnetic fields in all directions.
  • an apparatus and process for sensing of magnetic domains in magnetic materials includes the following:
  • the apparatus includes mechanical positioning capabilities similar to a magnetic read head for hard disk drives (HDD).
  • HDD hard disk drives
  • the apparatus includes one or more spin valves, wherein the one or more spin valves may include one or more non-local spin valves ( LSVs).
  • LSVs non-local spin valves
  • a non-local spin valve includes two ferromagnetic layers that are displaced along their plane relative to each other, in contrast to a local spin valve in which the ferromagnetic layers are separated by a non-magnetic material layer.
  • switching of magnetization by stray fields of domain walls is sensed via change of resistance in a NLSV.
  • One or more spin valves are contained in a measurement head in order to sense magnetization in multiple directions, such as providing angle control for spin valve or providing multiple spin valves to sense along each of the three axes, allowing sensing of both in-plane and out of plane magnetism.
  • the apparatus is capable of imaging varying types of domain walls, such as the Bloch, Neel and intermediate domain walls illustrated in Figure 3.
  • Figure 1 is an illustration of a system for sensing of magnetic materials according to an embodiment.
  • the system for sensing magnetic materials 100 (which may include a magnetometer, magnetic metrology system, or other magnetic sensing system) includes a mechanical positioning mechanism 140 and a measurement head 150 for use in the
  • the mechanical positioning mechanism 140 includes components similar to a hard disk drive positioning apparatus (such a motor and other actuator elements) for movement of the measurement head to sense the magnetic material 180.
  • the measurement head 150 (which may be referred to as a read head) includes one or more spin valves, which may include one or more non-local spin valves 155 (such as illustrated in Figures 6, 7 A, 7B, and 8), for the sensing of magnetization.
  • the one or more non-local spin valves 155 are implemented to sense
  • magnetization of the magnetic material 180 in multiple direction such as along each of three axes.
  • the implementation of the one or more non-local spin values may be as illustrated in, for example, Figures 7 A, 7B, and 8.
  • the system 100 may include, but is not limited to, elements such as a processor or controller 1 10 to control the magnetic sensing operation; a memory to provide data storage 1 15 for the processor or controller 1 10; firmware 120 such as stored in a flash memory or nonvolatile memory to provide instructions for the metrology apparatus or system 100; and input/output (I/O) unit 125 for the transmission and reception of data; a display 130 to display data relating to sensing of the magnetic material 180.
  • elements such as a processor or controller 1 10 to control the magnetic sensing operation
  • a memory to provide data storage 1 15 for the processor or controller 1 10
  • firmware 120 such as stored in a flash memory or nonvolatile memory to provide instructions for the metrology apparatus or system 100
  • input/output (I/O) unit 125 for the transmission and reception of data
  • a display 130 to display data relating to sensing of the magnetic material 180.
  • the sensing of magnetization utilizing an embodiment of a measurement head is not limited to a flat material such as a blanket film.
  • the measurement head may be utilized to, for example, sense magnetization in patterned nanopillars on chip, wherein the nanopillars store bits of information as the direction of magnetization.
  • the distribution of magnetization in the nanopillars is not uniform, and requires measurement in multiple dimensions.
  • embodiments are not limited to magnetic sensing for metrology purposes, and also include, for example, magnetic of magnetic material for data operations, such as sensing of multi-bit data in a storage medium through use of sensing of magnetism in multiple directions.
  • Figure 2 is an illustration of a pattern of magnetization in a magnetic material with magnetic domains and domain walls.
  • Figure 2 illustrates a typical pattern of domain walls for out-of-plane magnetization in a magnetic material 200.
  • the magnetic material 200 includes a first domain 210, the magnetic moments of the atoms in the first domain 210 being aligned in a first direction, and a second domain 230, the magnetic moments of the atoms in the second domain 230 being aligned in a second, different direction.
  • the magnetic material 200 further includes a domain wall 220 representing an interface between the first domain 210 and the second domain 230 in which the magnetic direction transitions between the direction of the first domain 210 and the direction of the second domain 230.
  • the magnetization of the domain wall 220 may align in any direction in the transition between the first domain 210 and the second domain 230.
  • a metrology apparatus or system provides sensing in multiple dimensions to provide accurate metrology of the magnetic material 200.
  • Figure 3 is an illustration of domain walls for magnetic domains. Any two magnetic domains are separated by a domain wall where the direction of magnetization gradually changes from the direction in the first domain to the direction in the second domain. As illustrated in Figure 3, a domain wall 330 exists between a first magnetic domain 310 and a second magnetic domain 320. Depending on the character and direction of change of magnetization, domain walls are classified into Bloch domain walls 350, wherein the magnetic moment rotates around an axis that is perpendicular to the plane of the domain wall, Neel domain walls 370, wherein the magnetic moment rotates around an axis that is parallel to the plane of the domain wall, and intermediate walls 360, wherein the magnetization at rotates at some angle ⁇ between the Bloch and Neel domain wall cases.
  • Bloch domain walls 350 wherein the magnetic moment rotates around an axis that is perpendicular to the plane of the domain wall
  • Neel domain walls 370 wherein the magnetic moment rotates around an axis that is parallel to the plane of the domain wall
  • Characterization of domain walls is essential in the design of magnetic memory and spin logic. For this reason, efficient and accurate detection of domain walls is extremely important for technology and product development. However, as the domain walls and direction of magnetization may vary, as shown in Figure 3, detection may be required in any direction.
  • domain walls are detected utilizing spin valves, which may include one or more non-local spin values (NLSVs).
  • a non-local spin valve contains a fixed nanomagnet (also known as a reference nanomagnet) and a free nanomagnet. The magnetization in the free nanomagnet is switched in response to the magnetic field created by magnetic domains and domain walls in the sensed medium. Relative directions of magnetization in the non-local spin valve result in different resistances between the two nanomagnets. When a current is passed through one of the nanomagnets, it produces voltage dependent on that resistance. The voltage is then sensed as a measure of magnetization in the medium.
  • FIG 4 is an illustration of a conventional mechanism including a magnetic force microscope for sensing of magnetic materials.
  • a metrology instrument includes a magnetic force microscope 400 with a magnetic tip 405, the magnetic tip 405 being illustrated as a core (non-magnetic) material 410 that is coated by a magnetic material 415.
  • the magnetic tip 405 of the magnetic force microscope 400 is utilized to sense magnetization of a flat magnetic sample 450, the magnetic sample 450 including multiple magnetic domains, such as the illustrated magnetic domains 460, 470, and 480, with domain walls between the magnetic domains, such as the illustrated domain wall 465 between magnetic domains 460 and 470, and domain wall 475 between magnetic domains 470 and 480.
  • Figure 4 is not drawn to scale, and in particular Figure 4 is not intended to illustrate the relative sizes of the magnetic domains and domain walls.
  • the magnetic force microscope 400 is only capable of sensing magnetization in the out-of-plane direction, the plane being the surface of the magnetic sample 450.
  • the magnetization direction of the magnetic domains out of the surface of the plane, as in magnetic domains 460 and 480, and into the surface of the plane, as in magnetic domain 470 may be sensed, but the magnetic force microscope 400 cannot provide information regarding the magnetization direction in the domain wall regions (such direction being in-plane directions in this example).
  • the magnetic force microscope would not be capable of imaging in- plane magnetization domains, which are not illustrated in Figure 4.
  • the magnetic force microscope 400 and magnetic tip 405 have a very small imaging field, the field being determined by piezoelectric shifts of a cantilever.
  • the path of the cantilever 430 for the sensing of the particular magnetic sample 450 is shown in Figure 4.
  • the out-of-plane magnetic domains 460, 470, and 480 are sensed, but the in-plane domain walls 465 and 470 are not sensed.
  • the time and cost of sensing is high because of the potential need to provide many passes over the magnetic sample 450 to fully map the magnetic domains and domain walls, and further the sensing operation is limited to out- of-plane magnetization.
  • a magnetic sensing apparatus or system in contrast to the magnetic force microscope 400 illustrated in Figure 4, is capable of registering projections of magnetization in multiple directions, while further providing a wide imaging field to allow for more efficient sensing of a magnetic sample.
  • Figures 5A and 5B are illustrations of a magnetic sensing apparatus including a magnetic read head according to an embodiment.
  • the widely-used read heads for magnetic hard drives contain sensors that register stray fields of magnetization at the domain walls between sectors of the magnetic disc.
  • the concept of a mechanical positioning mechanism of a hard disk drive read head or similar apparatus is applied in a magnetic sensing apparatus, wherein the use of such a mechanical positioning mechanism enables the scanning of a significantly wider area than the magnetic force microscope 400 illustrated in Figure 4 would allow.
  • an apparatus or system is capable of scanning of tens of cm 2 (square centimeters) of area.
  • a magnetic sensing apparatus 500 (which may include a metrology apparatus or system) includes a spin valve sensor mechanism contained within a magnetic read head to sense magnetization of a magnetic material 570.
  • the magnetic material 570 includes a first magnetic domain 572 with a first magnetism direction, a second magnetic domain 574 with a second magnetism direction, and a domain wall 576 between the first and second magnetic domains.
  • the magnetic sensing apparatus 500 includes a soft magnetic shield 510, permanent magnets 520 on either side of a spin valve sensor mechanism 505, a resistance of the spin valve sensor mechanism 505 varying with the sensed magnetism of the magnetic material 570.
  • the spin valve sensor mechanism 505 includes one or more spin valve sensors, which may include one or more non-local spin valve sensors. As shown in Figure 5B, the soft magnetic shield exists on either side of the spin valve sensor mechanism 505, with only one side illustrated in Figure 5 A.
  • the magnetic sensing apparatus 500 further includes a mechanism for measuring a resistance of the spin valve sensor mechanism 505, the mechanism shown as, for example, a contacts 525 and 530 on either side of the spin valve sensor mechanism 505, a current source 535 connected to the contacts such that a certain current I will flow through the spin valve sensor mechanism 505, depending on the resistance, and a voltage amplifier 550 to amplify a voltage signal generated due to the varying resistance of the one or more non-local spin valves of the spin valve sensor mechanism 505.
  • Figure 5A illustrates a single voltage amplifier 550
  • the magnetic sensing apparatus 500 includes a voltage measurement capability for each of a plurality of non-local spin valves.
  • the voltage measurements may be analyzed such as by combining the measurements into a vector to determine magnetism in multiple dimensions.
  • the magnetic sensing mechanism is capable of detecting magnetic fields in multiple directions through use of one or more spin valve elements.
  • the apparatus includes one or more non-local spin valves (NLSVs) (including two FM layers that are displaced along their plane relative to each other).
  • NLSVs non-local spin valves
  • a non-local spin valve may be constructed as illustrated in Figure 6.
  • one or more non-local spin valves are utilized to provide improved selectivity of switching of a single FM layer, rather than both FM layers, of the spin valve.
  • Figure 6 is an illustration of a non-local spin valve for a magnetic sensing element according to an embodiment.
  • a spin valve is a device including two or more conducting magnetic materials, wherein the electrical resistance of the spin valve can change between two values depending on the relative alignment of the magnetization in the layers, the resistance change occurring as a result of the Giant Magnetoresi stive effect.
  • a magnetic sensing element includes one or more non-local spin valves.
  • a non-local spin valve 600 includes a first free ferromagnetic layer 610 adjacent to a metal (which may be ruthenium or tantalum) layer 630 and a second fixed ferromagnetic layer 620 adjacent to an antiferromagnetic layer 625, the antiferromagnetic layer 625 acting via the surface exchange effect to lower the energy of magnetization in 620 pointing in one specific direction, thereby effectively fixing its magnetization direction, with the ferromagnetic layers 610 and 620 being connected by copper interconnect 615.
  • the spin valve illustrated in Figure 6 is a non-local spin valve, the ferromagnetic layers are displaced along their plane relative to each other.
  • the magnetizations of ferromagnetic layers of the device align in one of two directions ("up” or “down” in this illustration) depending on an external magnetic field. Due to the difference in magnetic energy, the free ferromagnetic layer 610 will switch at a lower applied magnetic field strength than the fixed ferromagnetic layer 620, thus creating either a low-resistance state in which the magnetic directions are aligned or a high-resistance state in which the magnetic directions are unaligned.
  • This difference in magnetizations is sensed via conducting current through one of the magnets, e.g. 620, by applying voltage between electrodes 635 and 615. As a result, spin polarized electrons drift along 615 towards the magnet 610. This process induces a difference of potentials that can be sensed as positive or negative voltage change between electrodes 615 and 645.
  • Figures 7A and 7B are illustrations of a measurement head for a single axis magnetic sensing system including a single spin valve with angle control according to an embodiment.
  • a measurement head 700 for a magnetic sensing system includes a single spin valve 710 (shown at a first angle), which may include a non-local spin valve 600 as illustrated in Figure 6.
  • the non-local spin valve 710 allows sensing of magnetization in one selected direction, wherein, as the measurement head is scanned over a chip or other magnetic material, the stray field of magnetization can flip the direction of a free ferromagnetic layer 720 (adjacent to a metal layer 725) while the magnetization of a fixed ferromagnetic layer 730 (fixed by the proximity to an antiferromagnetic layer 735) remains unchanged. As a result the resistance of the LS V changes, thus allowing for sensing of magnetic fields.
  • the measurement head includes angle control for the non-local spin valve, with Figure 7B further illustrating the measurement head 700 with non-local spin valve 710 in a second location.
  • the measurement head allows for switching the non-local spin valve to two or more angles in relation to a magnetic material, thus allowing for detection of magnetic fields in multiple axes.
  • the magnetometer may provide for switching the angle between two or more angles during the sensing of a magnetic material to allow for expanding magnetic sensing, including sensing of domain walls between magnetic domains.
  • Figure 8 is an illustration of a measurement head for a multiple axis magnetic sensing system including multiple spin valves according to an embodiment.
  • a measurement head 800 for a magnetic sensing system includes multiple spin valves, which may include non-local spin valves 600 as illustrated in Figure 6.
  • the measurement head includes at least a first non-local spin valve aligned in a first direction and a second non-local spin valve aligned in a second, different direction.
  • the measurement head 800 includes a first non-local spin valve 810 aligned along a first axis, a second non-local spin valve 820 aligned along a second axis, and a third non-local spin valve 830 aligned along a third axis.
  • each of the non-local spin valves is fabricated in a single chip.
  • each of the three non-local spin valves is aligned along a different axis, thus allowing for sensing of magnetization in any direction, i.e., in three dimensions.
  • the magnetometer can register all three projections of magnetization in a magnetic material, including sensing of domain walls of any type between magnetic domains.
  • Figure 9 is an illustration of a process for sensing of magnetic materials according to an embodiment.
  • a process for sensing of magnetic materials 900 includes the following:
  • the magnetic sensing system includes a magnetic sensing apparatus 500 as illustrated in Figures 5 A and 5B.
  • the measurement head including one or more spin valves, such as the non-local spin valve 600 illustrated in Figure 6.
  • the measurement head includes a single non-local spin valve, such as measurement head 700 with non-local spin valve 710 with angle control as illustrated in Figures 7 A and 7B.
  • the measurement head includes multiple non-local spin valves, such as measurement head 800 with three non-local spin valves, each aligned with a different axis.
  • the domain walls may include Bloch domain walls 350, Neel domain walls 370, and intermediate walls 360, as illustrated in Figure 3.
  • an apparatus includes a measurement head to sense magnetism of a magnetic material; and one or more spin valves, the one or more spin valves being contained in the measurement head. In some embodiments, the one or more spin valves to provide for sensing of magnetism of the magnetic material in multiple directions.
  • the measurement head includes a single spin valve. In some embodiments, the measurement head further includes an angle control mechanism to change an angle of the single spin valve in relation to the magnetic material. In some embodiments, the measurement head includes a plurality of spin valves, including at least a first spin valve aligned in a first direction and a second spin valve aligned in a second, different direction.
  • the plurality of spin valves includes the first spin valve aligned along a first axis, the second spin valve aligned along a second axis, and a third spin valve aligned along a third axis.
  • each of the plurality of spin valves is contained in a single chip.
  • the measurement head is capable of sensing Bloch domain walls, Neel domain walls, and intermediate domain walls.
  • the one or more spin valves include one or more non-local spin valves.
  • a magnetic sensing system includes a processor or controller; a measurement head for sensing of magnetism of a magnetic material; one or more spin valves contained in the measurement head; and a mechanical positioning mechanism to be controlled by the processor or controller to position the measurement head in relation to the magnetic material.
  • the measurement head includes one or more spin valves for sensing of magnetism in multiple directions.
  • the measurement head includes a single spin valve. In some embodiments, the measurement head further includes an angle control mechanism to change an angle of the single spin valve in relation to the magnetic material.
  • the measurement head includes a plurality of spin valves, including at least a first spin valve aligned in a first direction and a second spin valve aligned in a second, different direction.
  • the plurality of spin valves includes the first spin valve aligned along a first axis, the second spin valve aligned along a second axis, and a third spin valve aligned along a third axis.
  • each of the plurality of spin valves is contained in a single chip.
  • the system further includes a mechanism for measuring a resistance of the one or more spin valves.
  • a method includes receiving a magnetic material for sensing by a magnetic sensing system; scanning the magnetic material with a measurement head of the magnetic sensing system, the measurement head including one or more spin valves; and sensing magnetization of the magnetic material in multiple directions by measuring resistance of each of the one or more spin valves of the measurement head.
  • the method further includes sensing domain walls between magnetic domains in the magnetic material using results of the magnetic sensing.
  • identifying domain walls between magnetic domains in the magnetic material includes sensing Bloch domain walls, Neel domain walls, and intermediate domain walls,
  • the measurement head includes a single spin valve, and wherein scanning the magnetic material with the measurement head includes setting an angle control mechanism to set an angle of the single spin valve in relation to the magnetic material.
  • the measurement head includes a plurality of spin valves, including at least a first spin valve aligned in a first direction and a second spin valve aligned in a second, different direction.
  • the plurality of spin valves includes the first spin valve aligned along a first axis, the second spin valve aligned along a second axis, and a third spin valve aligned along a third axis, and wherein sensing magnetization of the magnetic material in multiple directions includes sensing magnetism in each of the three axes.
  • Various embodiments may include various processes. These processes may be performed by hardware components or may be embodied in computer program or machine- executable instructions, which may be used to cause a general-purpose or special-purpose processor or logic circuits programmed with the instructions to perform the processes.
  • the processes may be performed by a combination of hardware and software.
  • Portions of various embodiments may be provided as a computer program product, which may include a computer-readable medium having stored thereon computer program instructions, which may be used to program a computer (or other electronic devices) for execution by one or more processors to perform a process according to certain embodiments.
  • the computer-readable medium may include, but is not limited to, magnetic disks, optical disks, read-only memory (ROM), random access memory (RAM), erasable programmable read-only memory (EPROM), electrically-erasable programmable read-only memory (EEPROM), magnetic or optical cards, flash memory, or other type of computer-readable medium suitable for storing electronic instructions.
  • embodiments may also be downloaded as a computer program product, wherein the program may be transferred from a remote computer to a requesting computer.
  • element A may be directly coupled to element B or be indirectly coupled through, for example, element C.
  • a component, feature, structure, process, or characteristic A “causes” a component, feature, structure, process, or characteristic B, it means that "A” is at least a partial cause of "B” but that there may also be at least one other component, feature, structure, process, or characteristic that assists in causing "B.”
  • the specification indicates that a component, feature, structure, process, or characteristic "may”, “might”, or “could” be included, that particular component, feature, structure, process, or characteristic is not required to be included. If the specification or claim refers to "a” or “an” element, this does not mean there is only one of the described elements.
  • An embodiment is an implementation or example.
  • Reference in the specification to "an embodiment,” “one embodiment,” “some embodiments,” or “other embodiments” means that a particular feature, structure, or characteristic described in connection with the embodiments is included in at least some embodiments, but not necessarily all embodiments.
  • the various appearances of "an embodiment,” “one embodiment,” or “some embodiments” are not necessarily all referring to the same embodiments. It should be appreciated that in the foregoing description of exemplary embodiments, various features are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various novel aspects. This method of disclosure, however, is not to be interpreted as reflecting an intention that the claimed

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Abstract

Des modes de réalisation de l'invention concernent généralement la détection de domaines magnétiques dans des matériaux magnétiques. Un mode de réalisation d'un appareil comprend une tête de mesure pour détecter le magnétisme d'un matériau magnétique ; et une ou plusieurs vannes de spin, la ou les vannes de spin étant contenues dans la tête de mesure. La ou les vannes de spin sont destinées à permettre la détection du magnétisme du matériau magnétique dans de multiples directions.
PCT/US2017/027949 2017-04-17 2017-04-17 Détection de domaines magnétiques dans des matériaux magnétiques WO2018194548A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5561368A (en) * 1994-11-04 1996-10-01 International Business Machines Corporation Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate
WO2005101377A1 (fr) * 2004-04-02 2005-10-27 Tdk Corporation Stabilisateur pour tête à magnétorésistance dans un mode actuel perpendiculaire à plan et méthode de fabrication
US20140021571A1 (en) * 2011-04-06 2014-01-23 Xiaofeng Lei Single-chip bridge-type magnetic field sensor and preparation method thereof
US20140292322A1 (en) * 2013-03-29 2014-10-02 Tdk Corporation Magnetic sensor with reduced effect of interlayer coupling magnetic field
JP2016095138A (ja) * 2014-11-12 2016-05-26 Tdk株式会社 磁気センサ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5561368A (en) * 1994-11-04 1996-10-01 International Business Machines Corporation Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate
WO2005101377A1 (fr) * 2004-04-02 2005-10-27 Tdk Corporation Stabilisateur pour tête à magnétorésistance dans un mode actuel perpendiculaire à plan et méthode de fabrication
US20140021571A1 (en) * 2011-04-06 2014-01-23 Xiaofeng Lei Single-chip bridge-type magnetic field sensor and preparation method thereof
US20140292322A1 (en) * 2013-03-29 2014-10-02 Tdk Corporation Magnetic sensor with reduced effect of interlayer coupling magnetic field
JP2016095138A (ja) * 2014-11-12 2016-05-26 Tdk株式会社 磁気センサ

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