WO2018189237A1 - Composant émetteur de rayonnement - Google Patents

Composant émetteur de rayonnement Download PDF

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Publication number
WO2018189237A1
WO2018189237A1 PCT/EP2018/059280 EP2018059280W WO2018189237A1 WO 2018189237 A1 WO2018189237 A1 WO 2018189237A1 EP 2018059280 W EP2018059280 W EP 2018059280W WO 2018189237 A1 WO2018189237 A1 WO 2018189237A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor chip
radiation
carrier
emitting
converter
Prior art date
Application number
PCT/EP2018/059280
Other languages
German (de)
English (en)
Inventor
Ivar Tangring
Tamas Lamfalusi
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2018189237A1 publication Critical patent/WO2018189237A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials

Definitions

  • the present invention relates to a radiation-emitting component.
  • the invention further relates to a method for producing a radiation-emitting component.
  • a conventional radiation-emitting component may comprise egg ⁇ NEN carrier, one arranged on the carrier radiation-emitting semiconductor chip and an arranged on the support and surrounding the semiconductor chip converter for radiation conversion.
  • the semiconductor chip may be a volume emitter, which is designed to emit a primary blue light radiation. With the help of the converter, the primary light radiation can be at least partially converted. In this way, a white light radiation can be generated.
  • a mirror can be provided inside or outside the semiconductor chip. By means of the mirror, the primary light radiation can be reflected in the direction of the front side of the semiconductor chip.
  • radiation absorption in the semiconductor chip may occur. This applies in particular to the primary light radiation radiated back in the direction of the mirror and reflected back on it and passing through the semiconductor chip. Because of the semicon ⁇ ter and contact layers of the semiconductor chip mainly the primary light radiation can be absorbed. One consequence of this is a loss of luminous efficacy.
  • the object of the present invention is to provide an improved radiation-emitting component and a drive Ver ⁇ for making an improved radiation-emitting device. This problem is solved by the features of the independent Pa ⁇ tentance. Further advantageous embodiments of the invention are specified in the dependent claims.
  • a radiation-emitting component has a carrier, a radiation-emitting semiconductor chip arranged on a front side of the carrier and a converter for radiation conversion surrounding the semiconductor chip.
  • the semiconductor chip is a volume emitter designed for all-round radiation emission.
  • the semiconductor chip is electrically connected to the carrier at a rear side with the aid of metallic contact elements.
  • the contact elements serve as spacers, so that there is a gap between the back side of the semiconductor chip and the front side of the carrier.
  • the convergence ⁇ ter the semiconductor chip to surround on all sides and is arranged in the space between the semiconductor chip and the carrier.
  • the radiation-emitting component has a volume-emitting semiconductor chip arranged on a carrier, which is designed for all-round radiation emission.
  • a semiconductor chip can emit light radiation over all sides of the semiconductor chip, including the backside. Only those locations of the rear side on which the semiconductor chip by means of metallic contact elements with the carrier is electrically connected may be covered, so that there can be no radiation ⁇ emission over the back at these locations.
  • the metallic contact elements used in the region of the rear side of the radiation-emitting semiconductor chip are used for the electrical connection between the semiconductor chip and the carrier, and serve as spacers. In this way, a gap is formed laterally and between the contact elements between the rear side of the semiconductor chip and the opposite front side of the carrier.
  • the radiation-emitting component has a converter for radiation conversion, which surrounds the semiconductor chip on all sides.
  • the converter to all radiation-emitting side of the semiconductor chip borders, including the back, and be ⁇ is also found in the existing between the semiconductor chip and the carrier space. In this way, an all-round radiation conversion can be effected.
  • the gap can be completely filled with the converter.
  • the semiconductor chip can radiate a primary light radiation on all sides.
  • the primary light radiation can be at least partially converted with the help of the half ⁇ conductor chip on all sides enclosing converter on all chip sides, so at least partially in one or more conversion radiation, also referred to as secondary light radiation (s), converted ⁇ the.
  • This is associated with a local extraction of the primary light radiation on all sides of the chip, so that an internal absorption or reabsorption of the primary light radiation in the semiconductor chip can be suppressed.
  • a conversion radiation can, in contrast to the primary light radiation, be subject to a significantly lower absorption in the semiconductor chip.
  • due to the gap between the semiconductor chip and the carrier, which contains the converter a lower absorption of light radiation on the carrier can be effected.
  • the radiation characterized mediate device by an efficient operation with a high light output.
  • the metallic contact elements on the rear side of the semiconductor chip are used for the connection between the radiation-emitting semiconductor chip and the carrier. This is more stable than the usual in conventional ⁇ conventional components use of bonding wires. By omitting bond wires, absorption losses occurring on such bond wires can furthermore be avoided.
  • the output from the radiation-emitting semiconductor chip primary light radiation can, for example, be a blue light ⁇ radiation.
  • the primary light radiation can be converted with the aid of the converter into one or more conversion radiations, for example from the yellow, green and / or red spectral range. In this way, for example, a white light radiation can be generated.
  • the radiation-emitting semiconductor chip may be an LED chip (Light Emitting Diode).
  • the semiconductor chip has a radiation-transmissive chip substrate of, for example, sapphire and a chip substrate which is transparent to the chip. Substrate arranged semiconductor layer sequence with a akti ⁇ ven zone for generating radiation on.
  • the semiconductor layer sequence can be arranged on a carrier-facing rear side of the chip substrate.
  • all sides of the radiation-emitting semiconductor chips are at least 50% strah ⁇ lung permeable.
  • a proportion or area fraction of at least 50% of the radiation emission can be available from each side of the semiconductor chip.
  • the primary light radiation can be delivered ⁇ rich from each side of the semiconductor chip over a range or proceedingsnbe here, occupies which at least 50% of each respective chip side.
  • An emission of the primary light radiation only over a partial area of a page can apply at least to the rear side of the radiation-emitting semiconductor chip. This may be as described above arise from the fact that sites of the back, is on which the semiconductor chip by means of metallic contact elements with the carrier electrically connected, are covered, so that in these places no Strah ⁇ lung emission can take place on the back. However, the remaining sides of the semiconductor chip can be wholly or substantially wholly to emit radiation available, so that the primary light radiation entire respective side from ⁇ can be given over the entire or substantially.
  • the radiation-emitting semiconductor chip has a rectangular shape and thus chip six sides, that is adjacent to the rear one of the front and rear opposite sides of the four lateral edges ⁇ .
  • the converter can be adjacent to the six sides of the semiconductor chip. During operation of the radiation-emitting component, the semiconductor chip can emit the primary light radiation over all six sides, and the converter can at least partially convert the primary light radiation emitted by the six sides.
  • the semiconductor chip is designed for omnidirectional radiation emission, so that light emission can also take place via the rear side of the semiconductor chip facing the carrier.
  • the semiconductor chip does not have a mirror used for the reflection of radiation such as a metallic mirror layer on its back side ⁇ .
  • the semiconductor chip used is a low-cost volume-emitting sapphire chip, and not an expensive volume-emitting mirror-equipped flip-chip.
  • the semiconductor chip can only be mounted on the carrier in the manner of a flip chip. As a result, the radiation-emitting component can be produced inexpensively.
  • the carrier of the radiation-emitting component carrying the semiconductor chip has metallic conductor structures to which the semiconductor chip is electrically connected. Via the conductor structures, the semiconductor chip can be supplied with electrical energy during operation of the radiation-emitting component.
  • the metallic conductor structures of the carrier may be freely accessible on a rear side of the carrier opposite the front side. At this point, the conductor structures can form back contact surfaces.
  • the radiation-emitting component is suitable for surface mounting (SMT, Surface Mounting Technology).
  • the front side of the carrier is designed to be reflective or highly reflective.
  • the carrier may, for example, be a ladder frame based carrier having a metallic lead frame partially enclosed with a reflective plastic material. It is also possible to use a ceramic carrier provided with metallic conductor structures. In this embodiment, the ceramic carrier may additionally have a reflective plastic layer on the front side.
  • the carrier can, for example, have a cavity serving as a reflector on the front side, within which the semiconductor chip and the converter are arranged on the carrier.
  • a design can be realized for example ei ⁇ nem lead frame-based carrier.
  • the radiation-emitting semiconductor chip may be soldered onto the carrier, so that the semiconductor chip and the carrier are connected via a solder.
  • the metallic contact elements with the aid of which the semiconductor chip is connected to the carrier and which serve as spacers, can be components of the carrier and / or components of the semiconductor chip. In this context, the following embodiments may be considered.
  • the carrier has on the front side protruding contact portions of metallic conductor structures through which the contact elements or at least a part of the contact elements is formed.
  • the semiconductor chip can have corresponding contact surfaces on the rear side, which are electrically connected to protruding contact sections of the carrier.
  • the carrier may have corresponding contact surfaces on the front side, which are electrically connected to protruding chip contacts of the semiconductor chip.
  • the metallic contact elements may be formed by contact sections of the carrier which project on the front side and by chip contacts of the semiconductor chip projecting on the rear side.
  • the protruding contact portions of the carrier and the protruding chip contacts of the semi ⁇ conductor chip may be electrically connected together.
  • the electrical connection between the joining partners can be realized using a soldering process, so that the connection is made in each case via a solder or a layer of a solder.
  • a soldering process so that the connection is made in each case via a solder or a layer of a solder.
  • Such a connection can be generated reproducibly and can be characterized by a low thermal resistance, which favors efficient cooling of the semiconductor chip.
  • the solder layer having a small thickness, for ⁇ In game having a thickness in a range of lym to 2ym be formed exclusively. This allows a height of between the
  • Semiconductor chip and the carrier gap can be set with high accuracy. Also, during operation of the radiation-emitting component, only a slight absorption of light radiation on the solder can occur.
  • the metallic contact elements have a reflective metallic coating. This may be, for example, a silver coating. In this embodiment, absorption of light radiation at the contact elements can be suppressed during operation of the radiation-emitting component.
  • the metallic contact elements may have a sockeiförmige shape and seen in plan view, for example, have a circular contour. Also possible is another contour such as a rectangular or square contour. Furthermore, the contact elements can have sailed ⁇ hen an elongated shape in plan view. It possible that the Radiation-emitting semiconductor chip is connected by means of two of ⁇ spaced apart contact elements with the carrier. Alternatively, a larger number of contact elements, for example three contact elements, may be provided for connecting the semiconductor chip to the carrier. Such embodiments may be dependent on a soldering process used to connect the semiconductor chip to the carrier.
  • the contact elements can have such La ⁇ teral dimensions that an efficient thermal connection of the semiconductor chip to the carrier is possible, and the semiconductor chip can also return a large part of the primary light radiation.
  • the provided using the metal contact elements gap Zvi ⁇ rule the radiation-emitting semiconductor chip and the carrier has a height of at least 10ym. In this way, a large part of the operation of the radiation-emitting
  • Component be given over the back of the semiconductor chip ⁇ given primary light radiation using the converter arranged in the gap, so that it can no longer be absorbed in the semiconductor chip.
  • the gap between the semiconductor chip and the carrier may also have a height of at least 30ym or 40ym. In a further embodiment, the gap between the semiconductor chip and the carrier has a height of at least 50 ⁇ m.
  • the converter can be reliably introduced into the gap in the course of producing the radiation-emitting component.
  • the converter has a radiation-transmissive base material and phosphor particles contained therein.
  • the base material also called Matrixmate ⁇ rial, may be a plastic material such as a silicone material. This embodiment favors a cost-effective production of the radiation-emitting component. It is possible that the converter comprises one type of phosphor particles or mixtures of different types of phosphor particles. Furthermore, the converter can be designed such that the primary light radiation of the radiation-emitting semiconductor chip is converted differently in different regions of the converter.
  • the converter has a sedimented conversion layer adjacent to the radiation-emitting semiconductor chip and to the carrier.
  • This Kon ⁇ version layer which may be generated by sedimentation of phosphor ⁇ particles, may have a high concentration of phosphor particles.
  • the converter has a first and a second conversion layer.
  • the first Kon ⁇ version layer is disposed in the space between the semiconductor chip and the carrier and adjacent to the back of the semiconductor chip.
  • the second conversion layer adjoins a front side opposite the rear side and to lateral side edges of the semiconductor chip.
  • the first and second conversion layer for generating radiation ⁇ Licher conversion differed formed.
  • the first and second conversion layers may have a radiation-transmissive base material and phosphor particles contained therein.
  • the first and / or second conversion layer Kgs ⁇ NEN a kind of phosphor particles, or mixtures of different types of phosphor particles.
  • the two conversion layers can have a different material expression in the form of different types of phosphor particles.
  • the two conversion layers can be matched to one another such that a re-absorption of a conversion radiation generated in the operation of the radiation-emitting component with the aid of the first conversion layer can be suppressed in the second conversion layer.
  • the first conversion ⁇ layer for generating at least a first, for example red conversion radiation, and the second conversion layer for generating at least a second shorter wavelength conversion radiation, for example, be a yellow, green or yellow-green conversion radiation is formed.
  • an efficient mode of operation of the radiation-emitting component can be further promoted.
  • the gap between the semiconductor chip and the carrier can be completely filled with the first Konversi ⁇ onstik.
  • the second conversion layer which may adjoin the first conversion layer, may optionally be realized in the form of the above-described sedimented conversion layer.
  • the radiation-emitting component may be a single-chip component with a single radiation-emitting semiconductor chip arranged on the carrier.
  • the component has at least one further radiation-emitting semiconductor chip arranged on the front side of the carrier.
  • the further semiconductor chip can likewise be a volume emitter designed for all-round emission of radiation and can be electrically connected to the carrier at the rear side facing the carrier with the aid of further metallic contact elements. These may serve as spacers, whereby a gap between the back of the further semiconductor chip and the front of the carrier may be present.
  • the converter can surround the further semiconductor chip on all sides and be arranged in the intermediate space between the further semiconductor chip and the carrier.
  • the radiation-emitting component as a multi-chip device characteristics as discussed above with respect to a semiconductor chip, may come with respect to the at least one further semiconductor chip or on all semiconductor chips in the multi-chip device to at ⁇ application. For example, one or more of the following configurations and details may be present.
  • the semiconductor chip can be thermally connected in a i ⁇ ver manner with the support.
  • the contact elements may be realized in the form offindste ⁇ Henden at the front contact portions of the metallic conductor structures of the carrier and / or in the form ofnostiste ⁇ Henden at the back of the chip contacts of the semiconductor chip. From the rear sides of the semiconductor chips, in each case a proportion of at least 80% of the radiation emission can be available.
  • the gaps between the semiconductor chips and the carrier may each have a height of at least 10ym,
  • the converter may comprise a radiation-permeable base material and therein contained ⁇ ne phosphor particles.
  • the converter can also have a sedimented conversion layer adjacent to the semiconductor chips and to the carrier.
  • the converter may further comprise first and second conversion coatings Konversi ⁇ onstik which are adapted to generate different conversion radiations.
  • the first conversions Onstiken can be arranged in the spaces between the semiconductor chips and the carrier and adjacent to the back ⁇ sides of the semiconductor chips.
  • the second layer may ⁇ conversion to the front sides and lateral soflan- ken adjacent the semiconductor chips. If the carrier has a cavity at the front side, the semiconductor chips and the converter within the cavity on the carrier is arranged ⁇ can be.
  • the radiation-emitting semiconductor chip and the at least one further radiation-emitting semiconductor chip and all the semiconductor chips in the multi-chip device are mutually electrically connected ⁇ ver.
  • a series connection or a parallel connection of the semiconductor chips is possible. This can be realized by a coordinated design of metallic conductor structures of the carrier.
  • a method for producing a radiation-emitting component comprises providing a carrier and arranging a radiation-emitting semiconductor chip on a front side of the carrier.
  • the semi ⁇ conductor chip is excluded for all-round radiation emission imaginary volume emitters.
  • the semiconductor chip is electrically connected to the carrier at the rear side facing the carrier by means of metallic contact elements. Due to the contact elements, there is a gap between the back side of the semiconductor chip and the front side of the carrier. Further provided is a
  • the converter surrounds the semiconductor chip on all sides and is arranged in the intermediate space between the semiconductor chip and the carrier.
  • the radiation-emitting component produced with the aid of the method can have the above-described structure or a NEN structure according to one or more of the embodiments described above. Therefore, features and details described above can be applied in a similar manner for the herstel ⁇ regulatory procedure. Likewise, features and details mentioned below may also find application for the radiation-emitting device.
  • the provided carrier has on the front side protruding contact portions of metallic conductor structures, by which at least part of the contact elements is formed.
  • the radiation-emitting semiconductor chip can for this purpose have corresponding contact surfaces on the rear side of the carrier are electrically connected which cut in the arranging of the half ⁇ semiconductor chip on the carrier with protruding contact distances.
  • the semiconductor chip has on the rear side protruding chip contacts, through which at least a part of the contact elements is formed.
  • the carrier can for this purpose have corresponding contact surfaces on the front side, which are electrically connected at the placing of the half ⁇ semiconductor chip on the carrier with protruding chip contacts of the semiconductor chip.
  • the contact elements are formed by protruding on the front of the carrier and contact portions by protruding on the back of the chip contacts half ⁇ semiconductor chip.
  • the Maisab ⁇ sections and chip contacts in the arrangement of the semiconductor chip can be electrically connected to each other on the carrier.
  • the arrangement of the radiation-emitting semiconductor chip on the carrier can be carried out by means of a soldering process.
  • the respective joining partners of the embodiments described above can be connected to one another with the aid of a soldering agent.
  • the soldering offers the opportunity to realize an electrical connection with a high reproduction ⁇ ibility. Also, such a connection have a low thermal resistance.
  • the soldering can be carried out such that in each case a thin layer of solder is formed between the joining partners. For example, a layer thickness in a range from lym to 2ym is possible. In this manner, a height of the intermediate ⁇ space between the semiconductor chip and the carrier with a high accuracy can be set. Also, only a small absorption of light radiation on the solder can occur during operation of the radiation-emitting component.
  • the radiation-emitting semiconductor chip or the carrier with egg ⁇ nem solder can be provided, and the semiconductor chip may be formed using a heated bonding head (Bond Head) are placed on the carrier to solder the semiconductor chip to the carrier.
  • the semiconductor chip or the carrier may be provided with a eutectic solder and an adhesive, and the semiconductor chip may be disposed on the carrier. Subsequently, an oven process may be performed to solder the semiconductor chip to the carrier and evaporate the adhesive.
  • the connection of the semiconductor chip to the carrier can be carried out using two contact elements.
  • a larger number of Kunststoffele ⁇ elements for example three contact elements, kom ⁇ men to place the application of the semiconductor chip for the furnace process in a mechanically stable on the support and a self-alignment of the semiconductor chip on the carrier in the furnace process to be ⁇ favorable.
  • the second variant can also be carried out with the aid of two contact elements which, in view of the stable placement and the self-alignment of the semiconductor chip, can have a shape matched thereto, seen in plan view, for example an elongate shape.
  • providing the converter comprises applying a radiation-transmissive Base material with phosphor particles contained therein on the carrier after arranging the semiconductor chip on the carrier. This configuration enables a cost-Her ⁇ position of the radiation-emitting component.
  • the application of the phosphor particles containing Grundma ⁇ terials on the support can be performed in different ways and Wei ⁇ se.
  • a molding process molding process
  • Another possible process is a Dosie ⁇ ren using a dispenser (dispensing).
  • Base material on the carrier can also be introduced into the intermediate space between the semiconductor chip and the carrier.
  • a height of at least 50 ⁇ m can be provided for the intermediate space.
  • a sedimentation of phosphor particles takes place, so that a sedimented conversion layer adjacent to the radiation-emitting semiconductor chip and to the carrier is formed.
  • the converter has a first and a second conversion layer, which are designed to generate different conversion radiations for generating .
  • the providing of the converter comprises providing the radiation-emitting semiconductor chip with the first conversion coating on the back of the semiconductor chip prior to placing the semi ⁇ semiconductor chip on the carrier.
  • the arranging of the semiconductor chip on the carrier causes the first conversion layer to be contained in the gap between the semiconductor chip and the carrier.
  • the provision of the converter further comprises forming the second conversion layer on the carrier after arranging the semiconductor chip on the carrier. This is done such that the second conversion layer is adjacent to one of the rear opposite front and la teral ⁇ side edges of the semiconductor chip.
  • the first and second conversion layer may be such alsei ⁇ Nander tuned to a reabsorption a conversion radiation generated by the first conversion layer can be suppressed in the second conversion layer during operation of the device under Strahlungsemit ⁇ animal. Furthermore, the aforementioned embodiment can be more reliable
  • the semiconductor chip can be provided with the first conversion layer such that the first conversion layer is located laterally and between the chip contacts on the back side of the semiconductor chip and terminates flush with the chip contacts.
  • the provided carrier may optionally have a cavity at the front.
  • the arrangement of the radiation-emitting semiconductor chip and the provision of the converter can take place within the cavity of the carrier.
  • the radiation-emitting semiconductor chip is designed such that in each case a proportion of at least 50% of the radiation emission is available from all sides of the semiconductor chip . It can hereby be dispensed over a range of at least 50% of each respective chip side of the primary light radiation from each of the semiconductor chip side ⁇ semiconductor chip.
  • At least one further radiation-emitting semiconductor chip on the front side is te of the carrier arranged.
  • the white ⁇ tere semiconductor chip can also be a trained to everyone's radiation emission volume emitters.
  • the further semiconductor chip can also be electrically connected to the carrier at the rear side facing the carrier with the aid of further metallic contact elements. Due to the contact elements, there may be a gap between the rear side of the further semiconductor chip and the front side of the carrier. The provision of the converter can take place such that the converter surrounds the further semiconductor chip on all sides and is arranged in the intermediate space between the further semiconductor chip and the carrier.
  • a continuous carrier or carrier assembly for a plurality of components may be provided, and a plurality of volumenemittierende semiconductor chips can be arranged on the carrier and electrically connected by means of metallic contact members with the support, due to the contact elements in each case an intermediate space Zvi ⁇ rule the semiconductor chips and the Carrier may be present.
  • the converter can be provided on the carrier in such a way that the converter surrounds the semiconductor chips on all sides and is arranged in each case in the intermediate spaces between the semiconductor chips and the carrier.
  • the continuous support may have several such cavities, and within each cavity may be arranged at least a semiconductor chip ⁇ and a converter are provided.
  • the component composite can be separated into separate radiation-emitting components.
  • FIGS. 1 to 3 show a method sequence for producing a radiation-emitting component on the basis of lateral sectional views, wherein a volume-emitting semiconductor chip is arranged on a ladder frame-based carrier with projecting contact sections and subsequently a converter surrounding the semiconductor chip on all sides is formed on the carrier;
  • Figures 4 to 6 a further process flow for the manufacture ⁇ development of a radiation-emitting device based on time-sectional views, wherein a volumenemittierender semiconductor chip with protruding chip contacts is disposed on a lead frame-based carrier and successor neighborhood a is formed the semiconductor chip on all sides surrounding converter on the support;
  • Figures 7 to 9 arranged in a further process flow for the manufacture ⁇ development of a radiation-emitting component based on the lateral cross-sectional views, wherein a volumenemittierender semiconductor chip that protruding chip contacts has ⁇ and which is verse ⁇ hen with a first conversion coating on a lead frame-based carrier and subsequently forming a second conversion layer surrounding the semiconductor chip on the carrier;
  • FIG. 10 shows an enlarged view of a converter comprising a base material and phosphor particles
  • FIG. 11 is an enlarged side sectional view of a contact portion or a chip contact with a reflective BeSchichtung.
  • FIG. 12 shows a side sectional view of a further radiation-emitting component which has a conversion layer formed by sedimentation;
  • Figure 13 is a side sectional view of another
  • a radiation-emitting component which has a ladder frame-based carrier with a cavity
  • FIG. 14 is a side sectional view of a further radiation-emitting component with a carrier frame-based carrier with a cavity which has a conversion layer formed by sedimentation;
  • FIGS. 15 to 17 show a further method sequence for producing a radiation-emitting component based on lateral sectional views, wherein a volume-emitting semiconductor chip with projecting chip contacts is arranged on a ceramic carrier and subsequently a converter surrounding the semiconductor chip on all sides is formed on the carrier;
  • Figures 18 to 20 are perspective views of semiconductor chips and carriers for realizing single-chip devices having different arrangements and shapes of contact elements of the semiconductor chips and carriers;
  • FIGS. 21 and 22 show further top views of semiconductor chips and carriers for realizing multichip Components, wherein the carriers are designed to enable electrical connection of the semiconductor chips.
  • the components 100 have (at least) a volume-emitting semiconductor chip 140, a carrier 110, 118 and a converter 160 for radiation conversion.
  • the semiconductor chip 140 and the converter 160 are on the carrier 110, arranged ⁇ 118th
  • the semiconductor chip 140 is designed for all-round radiation emission and is surrounded on all sides by the converter 160.
  • the semiconductor chip 140 is electrically and thermally connected to the carrier 110, 118.
  • the contact elements 125, 155 may be components of the carrier 110, 118 and / or the semiconductor chip ⁇ 140.
  • the contact elements 125, 155 serve the same time ⁇ as spacers so that a gap 210 between the semiconductor chip 140 and the carrier 110, 118 is located upstream, is arranged in which the converter 160th
  • a coherent component composite can be produced and subsequently separated into separate components 100.
  • Sin ⁇ ne part of the figures can illustrate a section of the manufacturing composite in the range of one of the manufactured components 100, and conditions shown here may be present many times repeatedly in the composite. Also, the following description may apply to all of the components 100 fabricated together in the composite.
  • FIGS. 1 to 3 show a method for producing a radiation-emitting component 100 on the basis of sectional side views.
  • This may be a surface-mountable single-chip component 100.
  • a radiation-emitting semiconductor chip 140 and a conductor-frame-based carrier 110 are provided.
  • the carrier 110 has a metallic lead frame with conductor structures 120 and a white reflective plastic material 130 partially enclosing the lead frame.
  • the lead frame may comprise two metallic conductor structures 120th
  • the metallic lead frame, and thus the conductor patterns 120 of the carrier 110 may for example be of copper manufactured ⁇ det and additionally a metallic coating aufwei ⁇ sen, as will be explained in more detail below.
  • the reflective plastic material 130 may be, for example, an epoxy material in which reflective particles such as TiO 2 particles may be contained (not shown).
  • the support 110 has a substantially planar shape with a substantially flat front face 111 and a front 111 counteracted put flat back 112.
  • the front side 111 of the Trä ⁇ gers 110 which for mounting of the semiconductor chip 140 is vorgese ⁇ hen, is essentially formed by the reflective plastic ⁇ material 130. That way, the front can be 111 be highly reflective.
  • the carrier has contact elements 110 in the form of two clearlycircste ⁇ immediate contact portions 125th
  • the contact portions 125 are components of the conductor structures 120 and project out of the plastic material 130.
  • the radiation-emitting semiconductor chip 140 has, as shown in Figure 1, a front side 141, a pre ⁇ the side 141 opposite backside 142 and 142 extending to the rear lateral Be ⁇ tenflanken 145 on the front side of the 141st
  • the semiconductor chip 140 may have a cuboid shape with a total of six sides, and thus with four side edges 145.
  • the semiconductor chip 140 On the rear side 142, the semiconductor chip 140 has two metallic chip contacts 150.
  • the chip contacts 150 which may be formed for example of gold or aluminum ⁇ minium, serve as cathode and anode, and form metallic contact surfaces of the semiconductor chip 140.
  • On the chip contacts 150 of the semiconductor chip may be contacted 140 and supplied with electric power. Contrary to the representation in Figure 1 and the following figures, the chip contacts 150 may have a much smaller vertical extension in comparison with the projecting contact portions 125 of the support 110, and therefore exist in Wesent ⁇ union as flat contact elements.
  • the semiconductor chip 140 is a volume emitter designed for all-round radiation emission. In operation, the
  • Semiconductor chip 140 a primary light radiation from all sides, ie from the front side 141, the side edges 145 and emit the back 142 (not shown).
  • the primary light radiation can be a blue light radiation.
  • the semiconductor chip 140 may be a light emitting diode chip (LED, Light Emitting Diode), not shown constituents such as a radiation-transmissive chip substrate of, for example Sa ⁇ phir and a rear side arranged on the chip substrate the semiconductor layer sequence having with an active zone for Strah ⁇ lung generation.
  • the chip substrate may form the front side 141 and the side flanks 145 or a substantial part of the side flanks 145 of the semiconductor chip 140.
  • the chip contacts 150 may be arranged on the backside semiconductor layer sequence.
  • the semiconductor chip 140 is formed on its rear side 142 without a mirror provided for targeted radiation reflection.
  • the semiconductor chip 140 may be a low cost, volume-emitting, sapphire chip and may not be an expensive volume-emitting and mirrored flip-chip.
  • the semiconductor chip 140 is arranged on the front side 111 of the carrier 110 and electrically connected to the conductor structures 120 of the carrier 110.
  • the semiconductor chip 140 with its rear side 142 faces the carrier 110.
  • the electrical connection is made on the rear side 142 of the semiconductor chip 140 with the aid of the chip contacts 150 and the protruding contact portions 125 of the carrier 110.
  • a soldering process Ver ⁇ use of a brazing material, not shown, is performed via which the chip contacts 150 with one of the con- be electrically connected 125 bar sections.
  • the protruding contact sections 125 of the carrier 110 as spacers serve as spacers. NEN.
  • the contact portions 125 of the support 110 may have a relation to the plastic material 130 Rushste ⁇ rising (vertical) thickness or height of, for example, at least 50ym, so that the space 210 may have a height of at least 50ym.
  • a converter 160 for radiation conversion enclosing the semiconductor chip 140 is further provided on the front side 111 of the carrier 110. This is done in such a way that the converter 160 the semiconductor chip 140 surrounds on all sides, ie at all chip ⁇ pages 141, 142, 145 is adjacent, and the gap 210 between the semiconductor chip 140 and the support 110 completely fills.
  • the converter 160 is provided to convert the output from the semiconductor chip 140 in operation primary light ⁇ radiation at least partly, so Wenig ⁇ least partially convert it to one or more conversion radiations.
  • the converter 160 may, for example, be designed to generate one or more conversion radiations from the yellow, green and / or red spectral range. In this way, the radiation Bauele ⁇ ment 100 can, for example, emit a white light radiation.
  • the converter 160 may comprise a radiation-transmissive basic mate rial ⁇ and embedded therein and the radiation conversion be ⁇ acting phosphor particles, is explained in more detail below.
  • the base material containing the phosphor particles may be absorbed by performing a molding process (molding process)
  • the phosphor particles may have a grain size in a range from 10ym to 20ym.
  • the above height for the gap 210 of at least 50ym makes it possible with such a grain size to reliably introduce the base material containing phosphor particles into the gap 210 between the semiconductor chip 140 and the carrier 110.
  • a common conductor frame-based carrier 110 or carrier composite can be provided, which can have two conductor structures 120 for each of the components 100.
  • the conductor structures 120 of the various components 100 may initially be connected to one another via metallic connection structures of the conductor frame.
  • a plurality of radiation-emitting semiconductor chip 140 may be mon ⁇ advantage on the support 110, and can then an all semiconductor ⁇ chips 140 on all sides surrounding and all gaps 210 between the semiconductor chip 140 and the carrier 110 from ⁇ filling converters formed on the substrate 110160 become.
  • the manufactured in this manner component composite 100 can isolated with the example shown in Figure 3 Structure in separate radiation-Bauele ⁇ mente ⁇ to. This can be done for example by sawing.
  • the common carrier 110 and converter 160 can be severed and thereby distributed to the individual components 100.
  • the connecting structures of the lead frame can also cut through the ⁇ so that the conductor structures 120 are no longer connected with the individual devices 100 via metallic material of the lead frame (not shown respectively).
  • ⁇ device 100 is suitable for surface mounting (SMT, Surface Mounting Technology).
  • SMT Surface Mounting Technology
  • the component 100 can be removed with the aid of the rear contact surfaces 122 of the
  • Support 110 for example, by soldering to contact surfaces of another device, such as a printed circuit board, are electrically connected (not shown).
  • the semiconductor chip 140 can radiate a primary light radiation on all sides, al ⁇ over all chip sides 141, 142, 145.
  • the primary light radiation can be at least partially converted by means of the converter 160 surrounding the semiconductor chip 140 on all sides of the chip 141, 142, 145 and thereby extracted locally. In this way, a reabsorption of the primary light radiation in the semiconductor chip 140 can be largely suppressed.
  • a conversion radiation generated with the aid of the converter 160 may be subject to a significantly lower absorption in the semiconductor chip 140. It is also advantageous that a slight absorption of light radiation on the carrier 110 can be achieved between the semiconductor chip 140 and the carrier 110 by means of the gap 210 containing the converter 160. As a result, the radiation-emitting device 100 can be operated with a high luminous efficiency and ef ⁇ ficiency. This can also be favored by the reflective front 111 of the carrier 110.
  • the radiation-emitting semiconductor chip 140 can be efficiently thermally connected to the support 110 serving as a heat sink. In this way, efficient cooling of the semiconductor chip can be achieved in the operation of 140 strah ⁇ development emitting device 100th This promotes efficient operation and makes possible a long service life of the device 100.
  • the radiation-emitting device 100 can be made in this to ⁇ connection further such that projects from the rear side 142 of the radiation-emitting semiconductor chip 140, a proportion of at least 80% to the back radiation ⁇ emission are available, despite the presence in this area and over the chip contacts 150 and contact cut 125 prepared compound. For example, a share in the range of 90% is possible.
  • the Kon ⁇ bar sections 125 and chip contacts 150 may have such lateral From ⁇ measurements that an efficient thermal Anbin--making of the semiconductor chip is possible 140 to the carrier 110 and the semiconductor chip 140 may emit a large portion of the primary light radiation also at the back.
  • the remaining uncovered sides 141, 145 of the semiconductor chip 140 can be completely available for radiation emission, so that the primary light radiation can be emitted over the entire area of the respective side 141, 145.
  • soldering process performed during chip assembly can also prove beneficial. As a result, an electrical and thermal connection with a high reproducibility can be realized, which can also be characterized by a low thermal resistance. Furthermore, the soldering process can be carried out in such a way that the connection of the joining partners, ie in the present case of the chip contacts 150 and contact sections 125, is produced in each case via a thin solder layer having a layer thickness in a range of, for example, lym to 2ym. In this way, the height of the interim ⁇ rule space 210 between the semiconductor chip 140 and the carrier 110 can be set with high accuracy. It can also 100 le ⁇ diglich come in the operation of the radiation-emitting component in a low absorption of light radiation to the solder. Further possible details with regard to soldering are explained in more detail below.
  • FIGS. 4 to 6 show a further method for producing a radiation-emitting component 100 on the basis of side sectional views.
  • This component 100 may also be a surface-mountable single-chip component 100.
  • a volume emitting semiconductor chip 140 and a ladder frame based carrier 110 are provided.
  • the carrier 110 has a lead frame with two conductor structures 120 and a reflective plastic material 130.
  • loading of the carrier 110 sits a planar shape with a flat front face 111 and a flat rear side 112.
  • the conductor patterns 120 different to the above-described process flow are not on the front side 111 out but end flush with the plastic material 130 from.
  • the front side 111 is substantially formed by the reflective plastic material 130, so that the front side 111 can be highly reflective.
  • the front-side contact surfaces 121 are by themselves by the carrier
  • the semiconductor chip 140 shown in FIG. 4 has contact elements in the form of two metallic chip contacts 155, which project clearly on the rear side 142. Apart from this, the above information applies to the semiconductor chip 140 of FIG. 4 in a corresponding manner.
  • the semiconductor chip 140 is formed for all-round radiation emission.
  • the semiconductor chip 140 may be a light-emitting diode chip, and components (not shown) may be used. le as having a radiation-transmissive chip substrate and a back disposed on the chip substrate Halbleiterschich ⁇ ten hail having an active zone for generating radiation.
  • the rear chip contacts 155, which serve as cathode and anode may be arranged on the semiconductor layer sequence on ⁇ .
  • the semiconductor chip 140 may be realized in the form of a low-cost sapphire chip.
  • the design of the semiconductor chip 140 shown in Figure 4 can be realized by first surface are present ⁇ chip contacts by means of one or more metal deposition making processes reinforced metallic or thickened. For example, it is possible to carry out at least one electroplating process and / or at least one electroless plating process.
  • the metallic thickening can be carried out at the wafer level during the production of the semiconductor chip 140, ie in a state in which the semiconductor chip 140 is still connected to further semiconductor chips 140 in the form of a wafer. Subsequently, the wafer can be separated into separate semiconductor chip 140 with protruding chip contacts 155 (not shown in each case).
  • the semiconductor chip 140 is arranged on the front side 111 of the carrier 110 and electrically connected to the conductor structures 120 of the carrier 110.
  • the electrical connection is made on the rear side 142 of the semiconductor chip 140 with the aid of the chip contacts 155 and the front-side contact surfaces
  • the protruding chip contacts 155 of the semiconductor chip 140 serve as spacers, so that after chip mounting laterally and between the chip contacts 155 there is a gap 210 between the rear side 142 of the semiconductor chip 140 and the front side 111 of the carrier 110 is present.
  • the chip contacts 155 of the half ⁇ semiconductor chip 140 may be at least 50ym ⁇ play a (vertical) thickness of, for, so that the space 210 may have a height of at least 50ym.
  • a half- ⁇ semiconductor chip 140 enclosing converter 160 To prepare the radiation-emitting component 100 is hereinafter referred to, as shown in Figure 6, a half- ⁇ semiconductor chip 140 enclosing converter 160 floodge- provides for radiation conversion on the front side 111 of the carrier 110 which surrounds the semiconductor chip 140 on all sides and also the gap 210 between the semiconductor chip 140 and the carrier 110 fills.
  • a radiation-transmissive base material having contained therein ⁇ luminous material particles may be applied by performing a forming process on the substrate 110 (not shown).
  • the method of FIGS. 4 to 6 can be used for the composite production of a plurality of components 100 by mounting a plurality of semiconductor chips 140 on a common carrier 110, forming a converter 160 surrounding all semiconductor chips 140 on the carrier 110, and then thereafter present component composite in separate construction ⁇ elements 100 is isolated (not shown).
  • the radiation-emitting component 100 of Figure 6 ⁇ made light in a corresponding manner, an operation with high luminous efficiency ⁇ . Because with the help of the semiconductor chip 140 on all sides surrounding converter 160 which in operation of the semi ⁇ conductor chip 140 emitted on all sides primary radiation can be extracted close to the location. Also, due to the space 210 filled with the converter 160, a small amount of radiation absorption on the carrier 110 can be effected. With the aid of the protruding chip contacts 155, the semiconductor chip 140 can be efficiently thermally connected to the support 110 serving as a heat sink. From the back 142 of the
  • a proportion of at least 80 ⁇ 6, for example 90%, of the rear-side radiation emission may be available to semiconductor chips 140, despite the fact that they can be transmitted via the chip contact in this area. 155 and contact surfaces 121 between the semiconductor chip 140 and the carrier 110.
  • FIGS. 7 to 9 show, on the basis of side sectional views, a further method for producing a radiation-emitting component 100.
  • This method is based on the method explained above with reference to FIGS. 4 to 6, and differs therefrom in that one of two different conversion layers 161, 162 constructed converter 160 is provided.
  • a volume-emitting and all-round radiation emission semiconductor chip 140 and a lead frame-based carrier 110 are provided.
  • the carrier 110 has the above-described shape with a flat front side 111, at which contact surfaces 121 of conductor structures 120 of the carrier 110 are accessible.
  • the semiconductor chip 140 has the structure described above with chip contacts 155 projecting on the rear side 142. In contrast to the method sequence of FIGS.
  • the semiconductor chip 140 additionally has a first conversion layer 161 arranged on the rear side 142.
  • the Konversi ⁇ onstik 161 is located laterally between the chip contacts 155 to the back 142 of the semiconductor chip 140 and is flush with the chip contacts 155 from.
  • the first conversion layer 161 may have a strahlungs tellläs ⁇ Siges base material and phosphor particles contained therein. Further, the conversion layer 161 may be formed on the wafer level thereof during manufacturing of the semiconductor chip 140, that is, in a state where the semiconductor chip 140 is still connected to other semiconductor chips 140 in the form of a wafer.
  • the phosphor particles is provided with a base material, for example, un ⁇ ter using a blade or by means of spray coating on the wafer may be deposited and planarized after curing. Subsequently, the wafer can be separated into separate semiconductor chips 140, which each have a conversion layer 161 on the reverse side (not shown in each case).
  • the semiconductor chip 140 After providing the carrier 110 and the semiconductor chip 140 provided with the conversion layer 161, the semiconductor chip 140, as shown in FIG. 8, is mounted on the front side 111 of the carrier 110. For this purpose, a soldering process is performed, in which the chip contacts 155 are electrically connected to a respective one of the contact surfaces 121 of the carrier 110 using a solder, not shown.
  • the chip contacts 155 serve as distance holder, so that a gap 210 between the back 142 of the semiconductor chip 140 and the front 111 of the Trä ⁇ gers is provided 110th Since the semiconductor chip 140 additionally has ⁇ back side, the conversion layer 161 is achieved by the chip assembly, that in the space 210, the first conversion layer is included 161st In this process variant, the space 210 is thus fills ⁇ ver, unlike the above-described process flows not only after the chip mounting with conversion material. Therefore, for the chip contacts 155 and for the interspace 210, a height smaller than the above indications can be provided, for example of at least 10 ⁇ m.
  • the second conversion layer 162 adjoins the front side 141 and side edges 145 of the semiconductor chip 140 and to the first conversion layer 161.
  • the second conversion layer 162 may also comprise a radiation-transmissive base material and phosphor particles contained therein, and may be formed on the carrier 110 by performing a molding process (not shown). It is envisaged that with the aid of the two conversion layers 161, 162 different conversion ⁇ radiation can be generated. For this purpose, the conversion layers 161, 162 with different types of
  • Phosphor particles are produced.
  • the method of FIGS. 7 to 9 can be used to fabricate a plurality of components 100 by mounting a plurality of semiconductor chips 140 provided with a first conversion layer 161 on a common carrier 110, forming a second conversion layer 162 surrounding the semiconductor chips 140 on the carrier 110 , And the then present component composite in separate construction ⁇ elements 100 is isolated (not shown).
  • the radiation-emitting component 100 of Figure 9 made ⁇ light in a corresponding manner, an operation with high luminous efficiency ⁇ since the sides meetge ⁇ surrounded by the semiconductor chip 140 primary radiation with the help of the semiconductor chip 140 on all sides surrounding and from the two conversion layers 161, 162 constructed converter 160 at least partially converted and thereby can be extracted locally.
  • Fer ⁇ ner may be due to the space containing the conversion layer 161 210 a (er) e absorption of light radiation on the carrier 110 causes.
  • the semiconductor chip 140 may be efficiently thermally attached to the carrier 110.
  • the configuration of the converter 160 from the two conversion layers 161, 162 enables the width ⁇ reindeer, losses in the form of an absorption Konversionsstrah- lung to be reduced.
  • the two conversion layers 161 may be 162 matched to each other, the two conversion layers 161, that a reabsorption 161 conversion radiation generated can be suppressed in the second conversion layer 162 a in the operation of Strahlungsemit ⁇ animal forming device 100 using the first conversion ⁇ layer.
  • the first conversion layer 161 for generating a first conversion radiation and the second conversion layer 162 for generating a short-wave ⁇ ren second conversion radiation are formed.
  • the first conversion radiation may be, for example, a red light radiation.
  • the second conversion radiation can be, for example, a yellow, green or yellow-green light radiation.
  • the converter 160 has a radiation-transmissive base material 260 and phosphor particles 261 embedded therein for Strah ⁇ lung conversion on.
  • the base material 260 may be, for example, a silicone material. It may be contained ten one kind of fluorescent particles ⁇ 261 or a mixture of different types of phosphor particles 261 in the base material 260th Also, in an embodiment of the converter 160 with different conversion layers, as described above, a mixture of phosphor Parti ⁇ angles for at least one conversion layer may be provided.
  • FIG. 11 shows an enlarged detail of a possible embodiment which can be provided for conductor structures 120 or protruding contact portions 125 of a carrier of the radiation-emitting components 100 described here.
  • the contact section 125 shown in FIG. 11 has a reflective metallic coating 255 on the outside.
  • the coating 255 may be formed, for example, Sil ⁇ calc.
  • the coating 255 may be made by performing a galvanic or electroless chemical metal deposition process. With the help of Be ⁇ coating 255 during operation of the associated radiation-emitting device 100, absorption of light can be suppressed.
  • An embodiment with a reflective coating 255 for suppressing absorption losses can be considered correspondingly for protruding chip contacts 155 of a semiconductor chip 140.
  • FIG. 12 shows a side sectional view of a further radiation-emitting component 100.
  • the production of this component 100 is similar to the method explained with reference to FIGS. 7 to 9.
  • a volume-emitting semiconductor chip 140 designed for all-round radiation emission, which chip contact 155 protrudes on the rear side 142 and which is connected to an ner first conversion layer 161 is mounted on a support 110.
  • a half- ⁇ semiconductor chip 140 surrounding second conversion coating is formed on the front side 111 of the carrier 110 162, so that a state corresponding to FIG 9 may be present.
  • the second Kon ⁇ version layer 162 has a radiation-transparent base ⁇ material and contained therein phosphor particles.
  • the forming of the second conversion layer 162 on the Trä ⁇ ger 110 is such that the second conversion layer 162 is not (yet) cured.
  • the base material containing the phosphor particles can be applied to the carrier 110, for example by metering with the aid of a dispenser (dispensing).
  • a Se ⁇ dimentieren place of phosphor particles whereby the phosphor particles can be concentrated adjacent the semiconductor chip 140 and to the support 110th Only then can the curing take place.
  • This situation is illustrated in FIG. 12 by means of a second conversion layer 165 adjoining the semiconductor chip 140 and the carrier 110 and formed by the sedimentation, and by means of a further layer 166 covering this layer 165.
  • the sedimented conversion layer 165 has a high concentration of phosphor particles.
  • the phosphor particles may be densely packed and partially in contact.
  • the other layer 166 can no or ge ⁇ rings (and hence negligible) portion of luminescent material particles have (not shown respectively) in contrast to this.
  • the component 100 shown in FIG. 12 can likewise be manufactured in combination with further components 100 by mounting a plurality of semiconductor chips 140 provided with a first conversion layer 161 on a common carrier 110, forming a second conversion layer 162 surrounding the semiconductor chips 140 on the carrier 110 , a sedimentation of phosphor particles to form a ner sedimented second conversion layer 165 is carried out, and the then present component composite in separate construction ⁇ elements 100 is isolated (not shown).
  • the radiation-emitting component 100 of Figure 12 made ⁇ light in a corresponding manner, an operation with high luminous efficiency ⁇ since the sides meetge ⁇ surrounded by the semiconductor chip 140 primary radiation with the help of the semiconductor chip 140 on all sides enclosing and the two conversion layers 161, 165 and the further Layer 166 having converter 160 at least partially converted and thereby localized ex ⁇ trahiert can be. Furthermore, the conversion ⁇ layers 161, 165 be formed such that a re- can be suppressed absorption of a generated by the first conversion layer 161 in the second conversion radiation conversion layer 165th The sedimented and therefore concentrated configuration of the second conversion layer 165 also allows effective heat ⁇ line and thereby cooling of phosphor particles, which favors the life of the device 100.
  • FIG 13 shows a side sectional view of a wide ⁇ ren radiation-emitting component 100.
  • This Bauele ⁇ element 100 has a structure similar to the device 100 of Figure 6, but with the difference that the ladder frame-based carrier 110 a formed by the Kunststoffma- TERIAL 130 front Cavity 115 having sloping side walls.
  • the cavity 115 serves as a reflector of the radiation-emitting component 100.
  • the radiation-emitting semiconductor chip 140 and the converter 160 are arranged on the carrier 110.
  • the semiconductor chip 140 is mounted on the carrier 110 within the cavity 115, and subsequently a converter 160 surrounding the semiconductor chip 140 on all sides and filling the cavity 115 is formed on the carrier 110.
  • a radiation-transmissive basic material are deposited therein with fluorescent particles using a dispenser on the support 110 and nachfol ⁇ quietly cured.
  • the device 100 may also be fabricated in conjunction with other devices 100 by providing a common ladder frame based carrier 110 having a plurality of cavities 115, disposing semiconductor chips 140 in the cavities 115 on the carrier 110, providing the cavities 115 with a converter 160, and the component array thereafter present is separated into separate components 100 (not shown in each case).
  • the device 100 of Figure 13 may be modified such ⁇ the that at least one characteristic of one or more of the components 100 discussed above is used.
  • a configuration with contact sections 125 projecting on the front side 111 may be provided for the support 110, and a configuration with contact areas or areal chip contacts 150 may be provided for the semiconductor chip 140.
  • a further modification consists in realizing the converter 160 with a first conversion layer 161 adjoining the rear side 142 of the semiconductor chip 140 and with a second conversion layer 162 enclosing the semiconductor chip 140 (not shown in each case).
  • Another possible modification provides the ge in Figure 14 showed ⁇ radiation-emitting component 100. whose Her ⁇ position is similar to the device 100 of FIG.
  • a radiation-emitting device 100 can be realized not only with a ladder-frame-based carrier 110, but alternatively with another carrier.
  • FIGS. 15 to 17 show a side view of a further method for producing a radiation-emitting component 100.
  • This component 100 may also be a surface-mountable component
  • Be a single chip device 100 Be a single chip device 100.
  • a volume-emitting and all-round radiation emission semiconductor chip 140 and a carrier 118 are provided.
  • the semiconductor chip 140 has the structure explained above with the chip contacts 155 projecting on the rear side 142.
  • the carrier 118 shown in FIG. 15 is a ceramic carrier 118 which has metallic conductor structures 120 and a ceramic material 135 partially enclosing the conductor structures 120.
  • the carrier 118 may have two conductor structures 120.
  • the conductor structures 120 may be formed of copper, for example, and may additionally have a metallic coating. Another
  • the layer 137 may be, for example, a printed layer of a solder resist. Alternatively, the layer 137 may be a white silicon layer formed in a molding process (not shown).
  • the carrier 118 has a flat front side 111 and a substantially flat rear side 112.
  • the front side 111 is essentially formed by the reflective layer 137 and can therefore be highly reflective.
  • the conductor structures 120 have front-side conductor sections, which terminate flush with the reflective layer 137 and form frontal and freely accessible contact surfaces 121 at this point.
  • the conductor structures 120 furthermore have rear conductor sections which form rear contact surfaces 122.
  • the front and back conductor portions are connected to each other by means of through-contacting portions extending through the carrier 118.
  • a semiconductor chip 140 enclosing converter is subsequently, as shown in Figure 17, 160
  • 160 is subsequently, as shown in Figure 17, 160
  • ⁇ represents, for radiation conversion on the front side 111 of the carrier 118 which surrounds the semiconductor chip 140 on all sides and also the gap 210 between the semiconductor chip 140 and the carrier 118 fills.
  • a radiation-permeable base material having contained therein ⁇ luminous material particles by means of a molding process can be applied to the carrier 118th
  • the device 100 may also be manufactured in the United ⁇ waistband with further components 100 by a plurality of semiconductor chips are arranged 140 on a common ceramic substrate 118, an all semiconductor chips 140 surrounding converter is formed on the substrate 118.
  • the component 100 can be distinguished by an efficient mode of operation with high luminous efficacy and an efficient thermal connection of the semiconductor chip 140 to the support 118 serving as a heat sink.
  • the radiation-emitting device 100 of FIG. 17 may be modified such that at least one feature of one or more of the previously discussed devices 100 is used.
  • the converter 160 may be a to the back 142 of the semiconductor chip 140 adjacent the first ⁇ conversion layer 161 and be realized with a half- ⁇ semiconductor chip 140 enclosing the second conversion layer 162nd
  • An embodiment of the converter 160 with a conversion layer 165 adjoining the semiconductor chip 140 and the carrier 118 and formed by sedimenting phosphor particles is also possible.
  • a further possible modification consists in designing the carrier 118 to have an embodiment with the front side 111 protruding Contact sections 125, and provide for the semiconductor chip 140 a design with flat chip contacts 150 (not shown).
  • the chip mounting is performed by performing a soldering process.
  • the contact elements used in the respective processes 121, 125, 150, 155 of the carrier 110, 118 or the semiconductor ⁇ chips 140 may be provided with a solder, and the semiconductor chip 140, with the aid of a heated bonding head (bonding head) be arranged on the support 110, 118 and thereby soldered onto these.
  • An alternative approach be ⁇ is in it to provide the contact elements 121, 125, 150, 155 of the Trä ⁇ gers 110, 118 or the semiconductor chip 140 with a eutectic solder and with an adhesive, at ⁇ closing the semiconductor chip 140 on the support 110, 118 and subsequently perform a furnace process to solder the semiconductor chip 140 onto the carrier 110, 118 and evaporate the adhesive (not shown).
  • a furnace process to solder the semiconductor chip 140 onto the carrier 110, 118 and evaporate the adhesive (not shown).
  • different configurations with respect to the contact elements 121, 125, 150, 155 may be provided.
  • possible embodiments are explained in detail, which can come to the obi ⁇ gen method to avert respect.
  • Figures 18 to 20 show top views of semiconductor chips 140 and carriers 110, 118 for realizing single chip components, including a description of possible embodiments of the contact elements 121, 125, 150, 155.
  • the semiconductor chip 140 is depending ⁇ wells the rear side 142, and with respect to the carriers 110, 118, respectively, the front side 111 thereof is depicted.
  • the carrier 110, 118 are also the contours of the back conductor sections and thus the back contact surfaces
  • the carrier 110, 118 and the semiconductor chip 140 each have two contact elements 121, 125, 150, 155 with circular contours.
  • the ⁇ se configuration can occur when the first-mentioned soldering process used, in which the semiconductor chip 140 by means of a bonding head on the carrier 110, is placed 118th
  • the carrier 110, 118 and the semiconductor chip 140 each have three contact elements 121, 125, 150, 155 with circular contours.
  • two contact elements 121, 125, 150, 155 are used which have a rectangular elongate shape.
  • 20, may be provided with respect to the second-mentioned eutectic soldering process for mechanically stably placing the semiconductor chip 140 on the carrier 110, 118 and for self-aligning the semiconductor chip 140 on the carrier 110, 118 in the oven process can.
  • Multichip device 100 with two semiconductor chips 140 explained in more detail. These components 100 can be realized in a corresponding manner with the aid of the methods explained above, by 100, two semiconductor die 140 on a carrier 110, located 118 and both the semiconductor chips 140 ⁇ enclosing converter 160 is provided per device.
  • FIG. 21 shows an overview of a carrier 110, 118 provided for carrying two semiconductor chips 140 and of one of the semiconductor chips 140, including a representation of their contact elements 121, 125, 150, 155.
  • the contours of the rear side are additionally shown Ladder sections and thus contact surfaces 122 indicated by dashed lines, which are connected via fürheft istsabterrorisme with the overlying contact elements 121, 125.
  • the mounting positions of the semiconductor chips 140 on the carrier 110, 118 are hatched hinted ⁇ tet.
  • the semiconductor chips 140 can be connected in parallel by means of the carrier 110, 118.
  • Figure 22 shows a plan view of an intended for carrying two semiconductor chips 140 and carrier 118 of egg ⁇ nem of the semiconductor chips 140, wherein also the contacts ⁇ ELEMENTS 121, 125, 150, are shown 155th
  • the carrier 118 the rear-side contact surfaces 122 and the mounting positions of the semiconductor chips 140 are additionally indicated.
  • a ceramic support 118 is used, since such a support form a high design freedom unit with respect to front wiring.
  • the carrier 118 is presently configured such that le ⁇ diglich the vorhande in Figure 21 top right and bottom left ⁇ NEN contact elements 121, 125 cuts through fürnapssab- with the located thereunder rear conductor portions and contact surfaces 122 are electrically connected.
  • the other, top left and bottom right existing contact elements 121, 125 are connected to each other via a metallic connecting web 220.
  • This Dodgeele- elements 121, 125 and the connecting web 220 are le ⁇ diglich at the front of the carrier 118 and have no electrical connection to the back Maisabschnit ⁇ th.
  • the semiconductor chip 140 may be connected in series 118 using the carrier be ,
  • multi-chip devices may be realized with carriers configured to support a larger number of electrically connected semiconductor chips 140.
  • a carrier with rectifste ⁇ Henden contact portions 125 as explained with reference to FIGS 1 to 3, there is the possibility that sol ⁇ che contact portions 125 trained from the same material are det as the other conductor sections of the associated
  • the contact cuts 125 may be formed with an additional reflective metallic coating 255. Furthermore, it is possible to produce projecting contact cuts 125 of a carrier by firstly reinforcing or reinforcing metallically on the front side, flush and thus not protruding conductor structures 120 of the carrier (cf., for example, the carrier shown in FIG thickened. For this purpose, one or more metal deposition processes, al ⁇ so at least one galvanic deposition process and / or at least one electroless chemical deposition process can be performed. Furthermore, the possibility exists for producing a
  • Radiation-emitting device 100 to use a support with projecting at the front contact portions 125, and then (at least) to install or solder a radiation-emitting semiconductor chip 140 with protruding on the back of the chip contacts 155.
  • providing a converter 160 after a chip mounting may involve applying a
  • the light ⁇ material particles can be reliably introduced containing basic material in the gap 210 between the respective semiconductor chip and the carrier, a height can be provided at least 50ym for the gap 210th Unless fluorescent particles are used, which is opposite to the above grain size (10ym to 20ym) has a smaller grain size be ⁇ sitting, for example in a range from 5ym to 10ym, may also have a smaller height in relation to the gap 210, for example, a height of at least 30ym or 40ym, come to ⁇ apply.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un composant émetteur de rayonnement. Le composant émetteur de rayonnement présente un support, une puce semi-conductrice émettrice de rayonnement disposée sur le côté avant du support, et un convertisseur qui entoure la puce semi-conductrice et sert à convertir le rayonnement. La puce semi-conductrice est un émetteur volumique conçu pour émettre du rayonnement de tous côtés. La puce semi-conductrice est connectée électriquement au support, au niveau d'un côté arrière orienté vers le support, à l'aide d'éléments de contact métalliques. Les éléments de contact servent d'éléments d'espacement de sorte qu'un interstice est formé entre le côté arrière de la puce semi-conductrice et le côté avant du support. Le convertisseur entoure la puce semi-conductrice de tous côtés et est disposé dans l'interstice entre la puce semi-conductrice et le support. L'invention concerne également un procédé de fabrication d'un élément émetteur de rayonnement.
PCT/EP2018/059280 2017-04-11 2018-04-11 Composant émetteur de rayonnement WO2018189237A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017107834.7A DE102017107834A1 (de) 2017-04-11 2017-04-11 Strahlungsemittierendes bauelement
DE102017107834.7 2017-04-11

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WO2018189237A1 true WO2018189237A1 (fr) 2018-10-18

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WO2021185598A1 (fr) * 2020-03-18 2021-09-23 Osram Opto Semiconductors Gmbh Boîtier pour composant semi-conducteur optoélectronique et composant semi-conducteur optoélectronique

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Publication number Priority date Publication date Assignee Title
CN113037227B (zh) * 2021-03-12 2023-03-03 北京无线电测量研究所 一种p波段超宽带发射模块
DE102022102493A1 (de) 2022-02-02 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelementgehäuse und verfahren

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