WO2018182571A1 - Lignes de polarisation de flux de courant commandé dans des dispositifs à bits quantiques - Google Patents
Lignes de polarisation de flux de courant commandé dans des dispositifs à bits quantiques Download PDFInfo
- Publication number
- WO2018182571A1 WO2018182571A1 PCT/US2017/024396 US2017024396W WO2018182571A1 WO 2018182571 A1 WO2018182571 A1 WO 2018182571A1 US 2017024396 W US2017024396 W US 2017024396W WO 2018182571 A1 WO2018182571 A1 WO 2018182571A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- center conductor
- quantum
- squid
- flux bias
- quantum circuit
- Prior art date
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Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/035—Measuring direction or magnitude of magnetic fields or magnetic flux using superconductive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Data Mining & Analysis (AREA)
- Mathematical Optimization (AREA)
- Pure & Applied Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Analysis (AREA)
- Software Systems (AREA)
- Evolutionary Computation (AREA)
- Computational Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Artificial Intelligence (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Selon certains modes de réalisation, la présente invention concerne de nouvelles configurations de ligne de polarisation de flux pour commander des fréquences de bits quantiques supraconducteurs. Une structure de ligne de polarisation de flux proposée donnée à titre d'exemple comprend une seule ligne de conducteur central formant deux boucles partielles. Une autre structure donnée à titre d'exemple comprend deux lignes de conducteur central entraînées séparément, chacune des deux lignes de conducteur central formant une boucle partielle respective. Une autre structure de ligne de polarisation de flux donné à titre d'exemple comprend une ligne de conducteur central unique divisée en deux lignes de conducteur central, chacune des deux lignes de conducteur central formant une boucle partielle respective et comprenant une boucle d'induction respective. De telles structures fournissent des améliorations par rapport à des lignes de polarisation de flux classiques dans la génération d'un champ magnétique qui peut accorder la fréquence d'un bit quantique avec un degré de commande suffisant tout en garantissant que le champ magnétique n'affecte pas sensiblement d'autres composants d'un circuit quantique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2017/024396 WO2018182571A1 (fr) | 2017-03-28 | 2017-03-28 | Lignes de polarisation de flux de courant commandé dans des dispositifs à bits quantiques |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2017/024396 WO2018182571A1 (fr) | 2017-03-28 | 2017-03-28 | Lignes de polarisation de flux de courant commandé dans des dispositifs à bits quantiques |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2018182571A1 true WO2018182571A1 (fr) | 2018-10-04 |
Family
ID=63676497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2017/024396 WO2018182571A1 (fr) | 2017-03-28 | 2017-03-28 | Lignes de polarisation de flux de courant commandé dans des dispositifs à bits quantiques |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2018182571A1 (fr) |
Cited By (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20190044051A1 (en) * | 2018-08-14 | 2019-02-07 | Intel Corporation | Vertical flux bias lines coupled to vertical squid loops in superconducting qubits |
| WO2020150348A1 (fr) | 2019-01-17 | 2020-07-23 | Yale University | Circuit josephson non linéaire |
| CN111731517A (zh) * | 2020-07-02 | 2020-10-02 | 北京卫星环境工程研究所 | 一种多层隔热组件内部放气泄放装置 |
| US10810506B1 (en) | 2020-03-02 | 2020-10-20 | International Business Machines Corporation | Qubit biasing scheme using non-volatile devices |
| US10847705B2 (en) | 2018-02-15 | 2020-11-24 | Intel Corporation | Reducing crosstalk from flux bias lines in qubit devices |
| US10910488B2 (en) | 2018-06-26 | 2021-02-02 | Intel Corporation | Quantum dot devices with fins and partially wrapped gates |
| US11011693B2 (en) | 2019-06-24 | 2021-05-18 | Intel Corporation | Integrated quantum circuit assemblies for cooling apparatus |
| US11038021B2 (en) | 2017-06-24 | 2021-06-15 | Intel Corporation | Quantum dot devices |
| US11063138B2 (en) | 2017-06-24 | 2021-07-13 | Intel Corporation | Quantum dot devices |
| US11114530B2 (en) | 2017-12-17 | 2021-09-07 | Intel Corporation | Quantum well stacks for quantum dot devices |
| US11158731B2 (en) | 2017-09-28 | 2021-10-26 | Intel Corporation | Quantum well stacks for quantum dot devices |
| KR20210131410A (ko) * | 2019-04-25 | 2021-11-02 | 인터내셔널 비지네스 머신즈 코포레이션 | 초전도 루프들을 위한 지속적인 자속 바이어싱 방법 |
| US11177912B2 (en) | 2018-03-06 | 2021-11-16 | Intel Corporation | Quantum circuit assemblies with on-chip demultiplexers |
| US11183564B2 (en) | 2018-06-21 | 2021-11-23 | Intel Corporation | Quantum dot devices with strain control |
| CN113761334A (zh) * | 2020-11-13 | 2021-12-07 | 北京沃东天骏信息技术有限公司 | 一种可视化推荐方法、装置、设备和存储介质 |
| US11322591B2 (en) | 2017-06-24 | 2022-05-03 | Intel Corporation | Quantum dot devices |
| US11335778B2 (en) | 2018-06-26 | 2022-05-17 | Intel Corporation | Quantum dot devices with overlapping gates |
| US11355623B2 (en) | 2018-03-19 | 2022-06-07 | Intel Corporation | Wafer-scale integration of dopant atoms for donor- or acceptor-based spin qubits |
| US11387324B1 (en) | 2019-12-12 | 2022-07-12 | Intel Corporation | Connectivity in quantum dot devices |
| US11417765B2 (en) | 2018-06-25 | 2022-08-16 | Intel Corporation | Quantum dot devices with fine-pitched gates |
| US11417755B2 (en) | 2018-01-08 | 2022-08-16 | Intel Corporation | Differentially strained quantum dot devices |
| US11424324B2 (en) | 2018-09-27 | 2022-08-23 | Intel Corporation | Multi-spacers for quantum dot device gates |
| US11450765B2 (en) | 2018-09-27 | 2022-09-20 | Intel Corporation | Quantum dot devices with diodes for electrostatic discharge protection |
| US11494682B2 (en) | 2017-12-29 | 2022-11-08 | Intel Corporation | Quantum computing assemblies |
| WO2022269121A1 (fr) * | 2021-06-22 | 2022-12-29 | Iqm Finland Oy | Circuit supraconducteur à éléments accordables par flux magnétiques et procédés de limitation de diaphonie de flux entre des éléments accordables par flux magnétiques dans des circuits supraconducteurs |
| US11557630B2 (en) | 2017-09-28 | 2023-01-17 | Intel Corporation | Quantum dot devices with selectors |
| US11616126B2 (en) | 2018-09-27 | 2023-03-28 | Intel Corporation | Quantum dot devices with passive barrier elements in a quantum well stack between metal gates |
| US11658212B2 (en) | 2019-02-13 | 2023-05-23 | Intel Corporation | Quantum dot devices with conductive liners |
| US11682701B2 (en) | 2019-03-27 | 2023-06-20 | Intel Corporation | Quantum dot devices |
| US11699747B2 (en) | 2019-03-26 | 2023-07-11 | Intel Corporation | Quantum dot devices with multiple layers of gate metal |
| US20230246321A1 (en) * | 2017-09-07 | 2023-08-03 | Amherst College | Loop Gap Resonators for Spin Resonance Spectroscopy |
| US11737376B2 (en) | 2017-12-11 | 2023-08-22 | Yale University | Superconducting nonlinear asymmetric inductive element and related systems and methods |
| US11749721B2 (en) | 2018-09-28 | 2023-09-05 | Intel Corporation | Gate walls for quantum dot devices |
| US11937516B2 (en) | 2020-03-04 | 2024-03-19 | International Business Machines Corporation | Fabrication of a flux bias line local heating device |
| US11957066B2 (en) | 2019-09-04 | 2024-04-09 | Intel Corporation | Stackable in-line filter modules for quantum computing |
| US11984886B2 (en) | 2023-11-07 | 2024-05-14 | Iqm Finland Oy | Superconducting circuit with magnetic-flux-tunable elements, and methods for minimizing flux crosstalk between magnetic flux-tunable elements in superconducting circuits |
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Cited By (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11063138B2 (en) | 2017-06-24 | 2021-07-13 | Intel Corporation | Quantum dot devices |
| US11038021B2 (en) | 2017-06-24 | 2021-06-15 | Intel Corporation | Quantum dot devices |
| US11721748B2 (en) | 2017-06-24 | 2023-08-08 | Intel Corporation | Quantum dot devices |
| US11721723B2 (en) | 2017-06-24 | 2023-08-08 | Intel Corporation | Quantum dot devices |
| US11322591B2 (en) | 2017-06-24 | 2022-05-03 | Intel Corporation | Quantum dot devices |
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