WO2018169762A1 - Procédé et système de décollement d'une paire support-pièce temporairement collée par adhésif - Google Patents

Procédé et système de décollement d'une paire support-pièce temporairement collée par adhésif Download PDF

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Publication number
WO2018169762A1
WO2018169762A1 PCT/US2018/021634 US2018021634W WO2018169762A1 WO 2018169762 A1 WO2018169762 A1 WO 2018169762A1 US 2018021634 W US2018021634 W US 2018021634W WO 2018169762 A1 WO2018169762 A1 WO 2018169762A1
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WO
WIPO (PCT)
Prior art keywords
carrier
adhesive
workpiece
wire
blade
Prior art date
Application number
PCT/US2018/021634
Other languages
English (en)
Inventor
Chunbin Zhang
Original Assignee
Didrew Technology (Bvi) Limited
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Filing date
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Application filed by Didrew Technology (Bvi) Limited filed Critical Didrew Technology (Bvi) Limited
Publication of WO2018169762A1 publication Critical patent/WO2018169762A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/6839—Separation by peeling using peeling wedge or knife or bar

Definitions

  • Embodiments of this disclosure relate generally to bonding and debonding of carrier-workpiece pairs.
  • various embodiments of methods of debonding temprorarily bonded carrier-workpiece pairs are disclosed.
  • a workpiece needs to be thinned or processed with the support of a carrier to make the workpiece mechanically stable.
  • the workpiece can be temporarily bonded to the carrier using adhesives.
  • the workpiece needs to be debonded or separated from the carrier, and cleaned of any residue adhesives.
  • the workpiece can be a semiconductor wafer or device wafer on which thousands of chips are finally made.
  • WLP Wafer-level packaging
  • Thin wafers offer the benefits of improved heat dissipation, three-dimensional (3D) stacking, reduced resistance, and substrate flexibility.
  • TSV through silicon via
  • wafers need to be thinned to less than 100 microns ( ⁇ ). The thinning process needs to be high throughput and low cost to be suitable for volume production.
  • Wafer thinning is primarily achieved by mechanical grinding (back-grinding), polishing, and chemical etching.
  • Thin wafers, especially ultra-thin wafers are very unstable, and more susceptible to stress than traditional thick wafers.
  • thin wafers may be easily broken and warped. Therefore, temporary bonding to a rigid support carrier is required.
  • Thinned device wafers need to be supported for use on the backside in grinding process and subsequent processes such as photolithography, etching, plating, vacuum deposition, reactive ion etching, and so on.
  • the present disclosure provides novel methods of debonding or separating a temporarily adhesive-bonded carrier-workpiece pair with the use of a combination of chemical and mechanical methods.
  • the methods can be used for processing various workpieces of different shapes such as round, rectangle, or square shapes, of different materials such as silicon, gallium arsenide, sapphire, glass, metal, of different thicknesses, in various applications where the workpieces can be optical lenses, semiconductors, liquid crystal displays (LCD), solar panels, and so on.
  • the method is particularly useful for debonding temporarily adhesive-bonded semiconductor wafers in three-dimensional integrated circuit (3D-IC) semiconductor wafer level packaging.
  • 3D-IC three-dimensional integrated circuit
  • the methods provided by this disclosure can advantageously enhance process efficiency, simplify procedures, provide high wafer throughput, and reduce or eliminate defects such as device wafer breakage and internal device damage.
  • the method can greatly increase the range of selection of polymeric adhesives for the use of temporary workpiece bonding and debonding.
  • the use of recyclable polymer adhesive such as thermoplastics is of particular benefit as it can greatly lower the overall cost.
  • a method of debonding a temporarily bonded carrier-workpiece pair comprises exposing the carrier-workpiece pair in an environment containing a chemical solvent capable of dissolving the adhesive, and exerting a cutting or wedging action to the adhesive with a mechanical component to separate the workpiece from the carrier.
  • the carrier-workpiece pair may be immersed in a chemical solvent capable of dissolving the adhesive.
  • the carrier-workpiece pair may be sprayed with a chemical solvent capable of dissolving the adhesive.
  • the cutting or wedge action may be exerted with a wire or blade by moving the carrier-workpiece pair and/or the wire or blade relative to each other.
  • the wire or blade may be in reciprocating saw motion during the moving of the carrier-workpiece pair and/or the wire or blade relative to each other.
  • the wire or blade may be made of a metal, a metal alloy, a metal coated with a polymer, a polymer, a natural product such as fiber, cloth, cotton, or ceramics, or a composite of different materials as long the materials do not damage the surface of the workpiece or carrier.
  • the wire or blade may have a profile of a triangle, a polygon, a circle, an oval, a rectangle, or a square in cross-section transverse the length of the wire or blade or have a profile of a saw tooth in cross-section along a length of the wire or blade.
  • a method of debonding a temporarily bonded carrier-workpiece pair comprises exerting a cutting or wedging action to the adhesive in the carrier-workpiece pair with a wire or blade, and applying a lubricant to the carrier-workpiece pair while the cutting or wedging action is exerted to the adhesive with the wire or blade.
  • the cutting or wedge action may be exerted with a wire or blade by moving the carrier-workpiece pair and/or the wire or blade relative to each other.
  • the wire or blade may be in reciprocating saw motion during the moving of the carrier-workpiece pair and/or the wire or blade relative to each other.
  • the wire or blade may be made of a metal, a metal alloy, a metal coated with a polymer, a polymer, a natural product such as fiber, cloth, cotton, or ceramics, or a composite of different materials as long the materials do not damage the surface of the workpiece or carrier.
  • the workpiece in the carrier- workpiece pair may be a device wafer having a thickness of less than 100 microns, or less than 60 microns, or less than 30 microns.
  • a method of debonding a temporarily bonded carrier-workpiece pair comprises holding in place a carrier-workpiece pair temporarily bonded with an adhesive, and applying a stream of a liquid solvent to the adhesive to debond the carrier-workpiece pair.
  • the liquid solvent is capable of dissolving the adhesive.
  • the stream of the liquid solvent is applied at a pressure ranging from 60 to 10000 pounds per square inch (psi), preferably 300 to 3000 psi.
  • the stream of the liquid solvent can be applied to the adhesive in the form of a needle, a fan, a blade, or any combination thereof.
  • the stream of the liquid solvent can be applied with a pump system allowing the stream of the liquid solvent to move in three dimensions (X-Y-Z) relative to the adhesive at a linear or nonlinear velocity.
  • the liquid solvent can be heated to a temperature below its flashpoint before applying a stream of the liquid solvent to the adhesive.
  • the carrier-workpiece pair is temporarily bonded with a layer of a thermoplastic polymer adhesive.
  • the workpiece can be a semiconductor wafer, an optical lens, quartz, a sapphire wafer, display glass, a liquid crystal display, a thin metal plate, a thin membrane, or a film.
  • the carrier can be perforated, and the stream of the liquid solvent can be applied to the adhesive from the backside of the carrier.
  • FIG. 1 schematically illustrates a process of temporarily bonding and debonding a carrier-workpiece pair according to embodiments of the disclosure.
  • FIG. 2 schematically illustrates a method of debonding a temporarily bonded carrier-workpiece pair according to an exemplary embodiment of the disclosure.
  • FIG. 3 schematically illustrates a method of debonding a temporarily bonded carrier-workpiece pair according to another exemplary embodiment of the disclosure.
  • FIG. 4 schematically illustrates a method of debonding a temporarily bonded carrier-workpiece pair according to a further exemplary embodiment of the disclosure.
  • FIG. 5 shows profiles of exemplary mechanical components in cross- section transverse the length of the mechanical components which can be used in the debonding method according to embodiments of the disclosure.
  • FIG. 6 shows profiles of exemplary mechanical components in cross- section along the length of the mechanical components which can be used in the debonding method according to embodiments of the disclosure.
  • FIG. 7 schematically illustrates a method of debonding a temporarily bonded carrier-workpiece pair according to a further exemplary embodiment of the disclosure.
  • temporary bonding refers to embodiments where the bonding between a carrier and a workpiece is temporary and will be removed upon completion of one or more processing steps on the workpiece.
  • FIG. 1 schematically illustrates a process 100 of temporarily bonding and debonding a carrier-workpiece pair according to embodiments of the disclosure.
  • a carrier 102 can be coated with an adhesive 106 at step 150.
  • a workpiece 104 which may have been applied with a protective layer (not shown), can be temporarily bonded with the adhesive-coated carrier 102 at step 152, forming a temporarily bonded carrier-workpiece pair 110.
  • the temporarily bonded carrier-workpiece pair 110 can be formed by contacting the workpiece 104 facedown with the adhesive-coated carrier 102 under vacuum or pressure.
  • the workpiece 104 which is supported by the carrier 102 through the bonding of the adhesive 106, can be then thinned and/or further processed from the backside, as shown at step 154. Once the thinning and/or other processing are completed, the workpiece 104 can be debonded, or separated, from the carrier 102, as shown at step 156. The workpiece 104 and carrier 102 can be then cleaned at step 158.
  • the workpiece 104 can be a semiconductor device wafer, an optical lens, quartz, a sapphire wafer, display glass, an LED crystal, a thin metal plate, a thin membrane, a film, or the like.
  • the workpiece 104 can be made of silicon, polysilicon, silicon oxide, silicon-germanium, silicon nitride, gallium arsenide, gallium nitride, gallium phosphide, alumina titanium carbide, or silicon carbon.
  • the workpiece 104 can also be metals such as copper, aluminum, steel, gold, tungsten, tantalum, low K dielectrics, metal nitrides, metal alloys, silicides, and any combination thereof. Indeed, any suitable workpiece made of any materials in any form can be used in the method of this disclosure.
  • the carrier 102 can be any suitable carrier that has sufficient mechanical strength.
  • the carrier 102 can be made of the same material as that of the workpiece 104.
  • the carrier 102 can be made of silicon, glass, etc.
  • the carrier 102 can be applied with a certain degree of pulling force to facilitate separation of the carrier from the workpiece.
  • Suitable adhesives 106 that can be used in the temporary bonding process include thermoplastic polymers. Polymers of slight crosslinking and still solvable in a solvent may still be used. In some embodiments, thermoplastic polymeric adhesives are preferred because they can be recycled and reused after post debonding reclaim treatment, and therefore the total cost of the whole bonding and debonding process can be greatly reduced. Any suitable polymers can be used so long they meet the specifications as required by the processing conditions such as low outgassing, film uniformity, solubility in solvents, temperature tolerance, etc.
  • the polymers can be polyimides, rubbers, cyclic olefins, polyacrylates, poly methyl methacrylate, polyurethanes, polycarbonates, polyethylene terephthalate, cellulose, polyesters, polystyrenes, epoxies, silicones, polyamides, polysulfones, etc. or combination thereof.
  • Photoresists such as those manufactured by JSR Corporation of Japan and AZ series photoresists manufactured by AZ Electronic Materials (Merck) of Germany can also be used.
  • the polymers can be used in formulations which contain polymers as binders and other fillers and additives such as antioxidants, plasticizers. In some embodiments, single polymers are preferred for ease of recycling and reuse of the polymers.
  • the polymeric adhesives 106 can be applied to the carrier 102 using spin coating, spray coating, slot coating, knife coating, and other available coating techniques from solutions.
  • the polymeric adhesives 106 can also be applied in dry film lamination.
  • the adhesives 106 should form as uniform films as possible. Bonding of a workpiece such as a device wafer to a carrier wafer coated with adhesives can be accomplished with bonders commercially available from e.g. EVG of Austria, Suss MicroTec of Germany, Tokyo Electron Ltd. of Japan, and other companies, or inhouse made bonders.
  • the thickness of the polymer adhesive coated on the carrier may range from 1 to 500 microns.
  • the adhesive bonded carrier-workpiece pair 110 such as a device wafer- carrier wafer pair can be safely subjected to thinning such as back-grinding and chemical- mechanical polishing (CMP).
  • thinning such as back-grinding and chemical- mechanical polishing (CMP).
  • CMP chemical- mechanical polishing
  • a device wafer 104 may be thinned to have a thickness of less than 100 microns. In some applications, a device wafer 104 may be thinned to have a thickness of less than 60 microns or even 30 microns.
  • TSV through silicon via
  • DRIE deep reactive-ion etching
  • metal and dielectric deposition patterning such as photolithography, via etching, plasma ashing, bonding pads, passivating, annealing, and any combinations thereof.
  • the debonding step 156 can be critical. It is desirable that the debonding step is high throughput, defect less, damage less, and cost effective.
  • the present disclosure provides a chemical and mechanical debonding (CMDB) method, which can enhance process efficiency, simplify procedures, provide high wafer throughput, and reduce or eliminate defects such as device wafer breakage and internal device damage.
  • CMDB chemical and mechanical debonding
  • the debonding method provided by the disclosure also greatly increases the range of selection of polymeric adhesives for use in temporary bonding and debonding as a result of solvent use.
  • the use of recyclable thermoplastics is of particular benefit as it can greatly lower the overall cost.
  • the disclosed debonding method allows separation of the workpiece from the carrier and cleaning to be combined into one integrated step to provide high throughput and lower costs.
  • a temporarily adhesive- bonded carrier-workpiece pair can be debonded or separated using a combination of chemical and mechanical means.
  • the carrier-workpiece pair temporarily bonded with an adhesive can be exposed in an environment containing a chemical solvent capable of dissolving the adhesive.
  • a mechanical component may exert a cutting or wedging action to the adhesive to separate the workpiece from the carrier.
  • the carrier-workpiece pair temporarily bonded with the adhesive may be exposed to the chemical solvent by immersing the carrier-workpiece pair in the solvent, or by spraying the carrier-workpiece pair with the solvent.
  • the mechanical component can be a wire, filament, or blade with a suitable cross-sectional profile.
  • the chemical solvent or solvents used can be a single solvent or a combination of several solvents.
  • the selection of solvents may be dictated by the use of polymer adhesives.
  • the selection of a solvent to a particular polymer generally can be based on the "like dissolves like" principal. Solubility parameter is a factor to consider for selection of a solvent or combination of solvent mixtures.
  • the solvent can also be in the form of a formulation. Many of stripping solutions used in the microelectronics industry can be used.
  • Suitable solvents include n-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), ethyl lactate ethyl acetate, butyl acetate, methyl ethyl ketone (MEK), propylene glycol methyl ethylene acetate (PGMEA), acetone, cyclopentenone, tetrahydrofuran (THF), dimethyl acetamide, hydrocarbons, cyclic hydrocarbons, or strippers made of these solvents as main components.
  • NMP n-methylpyrrolidone
  • DMSO dimethyl sulfoxide
  • MEK methyl ethyl ketone
  • PMEA propylene glycol methyl ethylene acetate
  • acetone acetone
  • cyclopentenone tetrahydrofuran
  • THF tetrahydrofuran
  • dimethyl acetamide hydrocarbons
  • cyclic hydrocarbons or strippers made of these solvents as
  • NMP can be used if polyimide type polymer "durimide” made by Fujifilm Holdings Corporation is used as the temporary bonding adhesive.
  • Water-containing solvents water content between 0 to 100 percent
  • water content can also be used for environmental considerations so long they can carry the adhesive away during chemical and mechanical debonding.
  • the mechanical mode may dictate the overall speed of debonding. High throughput is desirable for volume production in 3D-IC manufacturing.
  • the cutting or wedge action can be exerted by a mechanical component such as a thin wire, thin filament, thin blade, or thin saw.
  • the mechanical component or components should be thin so it they do not cause mechanical damage to the workpiece such as the device wafer during debonding.
  • the wire, filament, or blade can be made of synthetic polymers, natural polymers, metals, ceramics, or combination thereof.
  • An example of the mechanical component is a metal wire coated with polymers.
  • Metal wires, filaments, or blades can be made of copper, gold, silver, stainless steel, tungsten, etc.
  • the thickness of the wire, filament, or blade is preferably less than 5 mm, more preferably less than 1 mm.
  • the outer surface of the wire, filament, or blade is coated with polymers to avoid scratching or damaging of the surfaces of the workpiece and/or the carrier during mechanical movement.
  • the polymers should be selected to not affect the chemical solvents for dissolving the adhesive.
  • Examples of polymer wires include dental floss or filaments made of Nylon (polyamide), and Teflon.
  • the wires, filaments, and blades can be made of other polymers such as polypropylene, silk, cotton, and other fluorinated polymers.
  • FIG. 5 shows profiles of exemplary mechanical components in cross- section transverse the length of the mechanical components which can be used in the debonding method according to embodiments of the disclosure.
  • the wire, filament, blades, or saw may have various suitable profiles in cross-section transverse the length of the components, such as a triangular, polygonal, circular, oval, rectangular, or square shape.
  • Other regular or irregular profiles in cross-section transverse the length of the mechanical component can also be used so long it gives cutting or wedging action to the carrier-workpiece pair without any detrimental effects.
  • FIG. 6 shows profiles of exemplary mechanical components in cross- section along the length of the mechanical components which can be used in the debonding method according to embodiments of the disclosure.
  • the wire, filament, or blade may have a profile of a saw tooth in cross-section along a length of the component.
  • Other regular or irregular profiles in cross-section along the length of mechanical component may also be used.
  • the mechanical component such as a wire, filament, or blaze exerts a cutting or wedging action to the adhesive between the carrier and the workpiece as the carrier-workpiece pair and/or the mechanical component move relative to each other.
  • the mechanical component may be moved towards the stationary carrier- workpiece pair to exert a cutting or wedging action to the adhesive, or the carrier- workpiece pair may be moved towards the stationary mechanical component while exerting a cutting or wedging action to the adhesive.
  • both the carrier- workpiece pair and the mechanical component may be moved simultaneously towards each other to increase the speed of the debonding process.
  • the mechanical component such as a wire, filament, or blade may be in a reciprocating saw motion during the relative moving of the carrier-workpiece pair and the mechanical component. The moving direction of the mechanical component should be tangential to the surface of the workpiece and/or the carrier to avoid scratching or damaging of the workpiece and/or the carrier.
  • FIG. 2 schematically illustrates a method 200 of debonding a temporarily bonded carrier-workpiece pair 210 according to an embodiment of the disclosure.
  • the temporarily bonded carrier-workpiece pair 210 may include a carrier wafer 202 and a device wafer 204 temporarily bonded by a layer of an adhesive 206.
  • the device wafer 204 may be a thinned device wafer having a thickness of e.g. less than 100 microns, or less than 60 microns.
  • the carrier wafer 202 may be made of e.g. silicon, glass, etc.
  • the adhesive 206 that temporarily bonds the carrier wafer 202 and the device wafer 204 may be a thermoplastic polymer.
  • the adhesive-bonded carrier wafer-device wafer pair 210 may be immersed in a solvent 212 in a container 214, exposing the carrier wafer-device wafer pair 210 to the solvent 212 capable of dissolving the adhesive 206.
  • a thin wire or blade 216 which can be held at the two ends of the wire or blade, can be aimed at the adhesive 206 between the carrier wafer 202 and the device wafer 204.
  • the thin wire or blade 216 can be caused to move in a direction across or parallel to the surface of the carrier wafer 202, as indicated by arrows 218.
  • carrier wafer-device wafer pair 210 may be caused to move against the thin wire or blade 216.
  • the thin wire or blade 216 may be moved in a reciprocating saw motion mode, as indicated by arrows 220.
  • the reciprocating saw motion may create a turbulent flow during adhesive dissolution by the solvent. This can greatly increase the debonding speed.
  • FIG. 3 schematically illustrates a method 300 of debonding a temporarily bonded carrier-workpiece pair 310 according to another embodiment of the disclosure.
  • temporarily bonded carrier-workpiece pair 310 may include a carrier wafer 302 and device wafer 304 temporarily bonded by an adhesive 306.
  • the device wafer 304 may be a thinned device wafer having a thickness of e.g. less than 100 microns, or less than 60 microns.
  • the carrier wafer 302 may be made of e.g. silicon, glass, etc.
  • the adhesive 306 that temporarily bonds the carrier wafer 302 and the device wafer 304 may be a thermoplastic polymer.
  • FIG. 3 on the left shows a view of a cross-section of the carrier wafer-device wafer pair 310 positioned in a vertical orientation whereas on the right shows a view from the side of the carrier wafer 302.
  • the adhesive-bonded carrier wafer-device wafer pair 310 is exposed to a solvent spray 312 capable of dissolving the adhesive 306.
  • the solvent spray 312 may continuously apply to an edge portion of the carrier wafer-device wafer pair 310, allowing the adhesive 306 to be exposed to the solvent.
  • a thin wire or blade 316 which can be held at the two ends of the wire or blade, can be aimed at the adhesive 306 between the carrier wafer 302 and the device wafer 304.
  • the thin wire or blade 316 can be caused to move in a direction across or parallel to the surface of the carrier wafer 302, as indicated by arrows 318.
  • carrier wafer-device wafer pair 310 may be caused to move against the thin wire or blade 316.
  • the thin wire or blade 316 may be applied a reciprocating saw motion to the adhesive, as indicated by arrows 320.
  • the reciprocating saw motion may create a turbulent flow during adhesive dissolution by the solvent. This can greatly increase the debonding speed.
  • the pressure of the solvent spray may range from 0 to 3000 psi.
  • the solvents can also act as adhesive removers. While the solvent can be sprayed under a high pressure, spraying under high pressure is not required. In some embodiments for environmental considerations, water-containing solvents (water content between 0 to 100 percent) can be used so long they can carry the adhesive away during chemical and mechanical debonding.
  • FIG. 4 schematically illustrates a method of debonding a temporarily bonded carrier-workpiece pair 410 according to a further embodiment of the disclosure.
  • temporarily bonded carrier-workpiece pair 410 may include a carrier wafer 402 and a device wafer 404 temporarily bonded by a layer of adhesive 406.
  • the device wafer 404 may be a thinned device wafer having a thickness of e.g. less than 100 microns, or less than 60 microns.
  • the carrier wafer 402 may be made of e.g. silicon, glass, etc.
  • the adhesive 406 that temporarily bonds the carrier wafer 402 and the device wafer 404 may be a thermoplastic polymer.
  • FIG. 4 on the left shows a view of a cross-section of the carrier wafer-device wafer pair 410 positioned in a vertical orientation whereas on the right shows a view from the side of the carrier wafer 402.
  • the carrier wafer-device wafer pair 410 may not be exposed to a chemical solvent capable of dissolving the adhesive. Instead, a lubricant such as water or any other suitable lubricant such as glycerine, mineral oil, or the like may be applied along the edges of the carrier wafer -device wafer pair 410.
  • a thin wire or blade 416 which can be held at the two ends of the wire or blade, can be aimed at the adhesive 406 between the carrier wafer 402 and the device wafer 404, and caused to move in a direction across or parallel to the surface of the carrier wafer 402, as indicated by arrows 418, exerting a cutting or wedging action to the adhesive 406.
  • the carrier wafer-device wafer pair 410 may be caused to move against the thin wire or blade 416.
  • the thin wire or blade 416 may be applied a reciprocating saw motion, as indicated by arrows 420.
  • a lubricant such as water can be applied to carry the adhesive away or cool down the carrier wafer -device wafer 410 and/or the thin wire or blade 416.
  • a temporarily adhesive- bonded carrier-workpiece pair is debonded or separated using high-pressure solvent streams or sprays.
  • the carrier-workpiece pair temporarily bonded with an adhesive can be held in place using any suitable means.
  • a stream of a liquid solvent is applied to the adhesive at a high pressure ranging from 60 to 10000 pounds per square inch (psi) to debond the carrier-workpiece pair.
  • the liquid solvent is capable of dissolving the adhesive.
  • the solvent or solvents used can be any suitable solvent or solvents described above in conjunction with the chemical mechanical debonding method.
  • FIG. 7 schematically illustrates a method 500 of debonding a temporarily bonded carrier-workpiece pair 510 according to an embodiment of the disclosure.
  • the temporarily bonded carrier-workpiece pair 510 may include a carrier wafer 502 and a device wafer 504 temporarily bonded by a layer of an adhesive 506.
  • the device wafer 504 may be a thinned device wafer having a thickness of e.g. less than 100 microns, or less than 60 microns.
  • the carrier wafer 502 may be made of e.g. silicon, glass, etc.
  • the adhesive 506 that temporarily bonds the carrier wafer 502 and the device wafer 504 may be a thermoplastic polymer adhesive.
  • FIG. 7 on the top shows a view of a cross-section of the carrier wafer- device wafer pair 510 held in place e.g. in a horizontal orientation.
  • the carrier wafer- device wafer pair 510 may also be held in place in other suitable orientations.
  • the device wafer 504 can be held in place by a vacuum chuck, frame, or mechanical pins.
  • the carrier wafer can also be held by a vacuum chuck, frame, or mechanical pins. It should be understood that in order to separate the carrier wafer 502 from the device wafer 504, the carrier wafer 502 should not be held too tightly to negatively affect separation.
  • the carrier wafer 502 is held with a slight pulling force at the back to facilitate the separation of carrier wafer 502 from the device wafer 504. As the separation propagates to certain degree, the carrier wafer 502 is detached from the device wafer 504, physically (no adhesive to connect the two).
  • a stream of liquid solvent 508 can be applied to the adhesive 506 to debond the carrier wafer-device wafer pair 510.
  • the stream of liquid solvent 508 is applied to the adhesive 506 via a pump system including a nozzle 512 coupled to a pump via a pipe (not shown).
  • a high-pressure generating pump can be used so that the stream of liquid solvent 508 flowing out of the nozzle 512 provides a high pressure.
  • the pressure of the stream of liquid solvent is defined as the operating pressure of the pump.
  • the stream of the liquid solvent 508 is applied to the adhesive at a pressure ranging from 60 to 10000 pounds per square inch (psi). In some preferred embodiments, the pressure of the solvent stream is more than 500 psi to effect fast debonding.
  • the high-pressure stream of liquid solvent 508 can be applied in the form of a needle, blade, fan, or any combination thereof through the use of a suitable nozzle.
  • the stream of the liquid solvent 508 can be targeted to the adhesive 506 in a certain angle e.g. ranging from 0 to 80 degrees with respect to the layer of the adhesive.
  • the carrier wafer 502 can be perforated so that the high-pressure solvent stream or spray can be applied at the backside of the carrier wafer.
  • the nozzle 512 of the pump system can move so that the high-pressure solvent stream 508 can be applied to the adhesive 506 in a particular fashion such as in a scanning fashion.
  • the nozzle can move in a vibrational mode or in a three-dimensional (X-Y-Z) mode to allow the solvent stream move accordingly.
  • the nozzle can move at a linear speed or nonlinear speed. Moving the nozzle and thus the solvent stream can maximize or increase debonding speed.
  • the solvent can also be heated to a temperature below its flash point for fast removal of the adhesive.
  • FIG. 7 on the bottom shows that a high-pressure solvent stream or spray may continue after the device wafer 504 has been debonded or separated from the carrier wafer 502, to remove residual adhesives from the device wafer 504 and/or carrier wafer 502, or to clean the device wafer 504 and/or carrier wafer 502.
  • the same nozzle 512 can be used.
  • a different nozzle can be used to more completely clean the device wafer.
  • Different spray nozzles can be used for rinsing and cleaning.
  • the device wafer 504 can then be dried and removed to continue to the next operation.
  • the nozzle or tools for high-pressure solvent debonding the carrier wafer- device wafer pair 510 can also be used for cleaning the carrier wafer 502 and/or the device wafer 504 so that the debonding and cleaning can be combined in one tool. As such, the footprint of debonding and cleaning tools in a wafer fab can be greatly reduced.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Lors du décollement d'une paire support-pièce temporairement collée par adhésif avec une combinaison de procédés chimiques et mécaniques, des solvants ou des produits chimiques sont utilisés pour éliminer les adhésifs principalement par dissolution, et un fil mince, un filament ou une lame sont utilisés pour exercer une action de coupe ou d'enfoncement de coin entre le support et la pièce. Les deux procédés sont utilisés ensemble pendant le processus de décollement. Dans la paire support-pièce, la pièce peut être une tranche de semi-conducteur qui a été amincie et traitée. Le support et la pièce sont collés temporairement à l'aide d'un adhésif soluble dans un produit chimique ou un solvant sélectionné. Le procédé de décollement chimique et mécanique (CMDB) peut être réalisé par immersion dans le solvant ou pulvérisation de solvant pour assurer un décollement à haut débit. Les adhésifs dissous peuvent être recyclés et réutilisés ultérieurement, ce qui abaisse le coût global du processus de collage et de décollement.
PCT/US2018/021634 2017-03-15 2018-03-08 Procédé et système de décollement d'une paire support-pièce temporairement collée par adhésif WO2018169762A1 (fr)

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US201762601196P 2017-03-15 2017-03-15
US62/601,196 2017-03-15
US201762601289P 2017-03-17 2017-03-17
US62/601,289 2017-03-17

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CN109950267A (zh) * 2019-03-26 2019-06-28 德淮半导体有限公司 图像传感器的制作方法
CN109950267B (zh) * 2019-03-26 2021-03-30 德淮半导体有限公司 图像传感器的制作方法

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