WO2018161833A1 - 半控型器件驱动节流装置 - Google Patents

半控型器件驱动节流装置 Download PDF

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Publication number
WO2018161833A1
WO2018161833A1 PCT/CN2018/077707 CN2018077707W WO2018161833A1 WO 2018161833 A1 WO2018161833 A1 WO 2018161833A1 CN 2018077707 W CN2018077707 W CN 2018077707W WO 2018161833 A1 WO2018161833 A1 WO 2018161833A1
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Prior art keywords
transistor
controlled device
semi
capacitor
semiconductor switch
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PCT/CN2018/077707
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English (en)
French (fr)
Inventor
郭桥石
Original Assignee
广州市金矢电子有限公司
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Priority claimed from CN201710677645.2A external-priority patent/CN107733411B/zh
Application filed by 广州市金矢电子有限公司 filed Critical 广州市金矢电子有限公司
Publication of WO2018161833A1 publication Critical patent/WO2018161833A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors

Definitions

  • the semi-controlled device driving throttle device of the invention is used in a driving circuit of a semi-controlled device, and is particularly suitable for use in a driving circuit of a semi-controlled device such as a thyristor, having a controlless dead zone or a control blind zone.
  • a semi-controlled device such as a thyristor, having a controlless dead zone or a control blind zone.
  • the throttle device with good throttling effect.
  • thyristors half-controlled devices
  • resistive, inductive or capacitive loads In order to reduce the driving power of thyristors, there has been a reduction in the market.
  • the related technology for driving energy consumption such as the patent number: ZL201110430747.7, the patent name is: trigger energy-saving device and thyristor switch
  • the disclosed working principle is: the voltage detecting circuit detects that the voltage across the main circuit of the thyristor is greater than that of the thyristor
  • the on-state voltage generally 1.1 to 1.5V, the original file is defined as the on-voltage drop
  • the control electronic switch is turned on
  • the drive signal drives the thyristor through the electronic switch
  • the voltage detection circuit detects when the thyristor is turned on, and controls the electron The switch is cut off.
  • the voltage detection circuit must detect that the voltage across the main circuit of the thyristor is greater than the on-state voltage of the thyristor, and then control the conduction of the electronic switch. Since the hysteresis provides the thyristor drive signal, the drive dead zone has been objectively present, and the thyristor obtains the drive signal from its trigger pole. There is a certain response time for the thyristor conduction output. Theoretically, there is no blind zone drive control for the thyristor. See the voltage waveform diagram at both ends when the thyristor using this technology is turned on (see Figure 1). It can be seen that there is a lot of thyristor on-state voltage. Voltage spikes.
  • the object of the present invention is to solve the deficiencies of the existing thyristor drive control and provide a semi-controlled device with a thyristor and the like, which has a non-conducting dead zone or a small dead zone and a throttling effect. Device.
  • a semi-controlled device driving throttle device includes a first capacitor, a first semiconductor switch, a discharge switch, and a voltage detecting unit, wherein the voltage detecting unit is connected to both ends of the half-controlled device to be driven, and the voltage detecting unit
  • the output signal is transmitted to the control end of the first semiconductor switch through the first capacitor, the discharge switch is connected to the first capacitor for discharging the first capacitor, and the first semiconductor switch is connected in series in the driving circuit of the semi-controlled device, the first semiconductor The switch is turned on when the potential difference between the two ends of the half-controlled device is less than the on-state voltage of the half-controlled device, and the first semiconductor switch is turned off after the half-controlled device is turned on.
  • a semi-controlled device driving a throttling device wherein a potential difference between a first semiconductor switch and a half-controlled device is less than an on-state voltage of the semi-controlled device, and a direction of a potential difference between the two ends of the semi-controlled device satisfies a half control
  • the device is turned on in the turn-on voltage direction, and the first semiconductor switch is turned off after the half-controlled device is turned on.
  • a semi-controlled device drives a throttling device, and the semi-controlled device is a unidirectional thyristor or a bidirectional thyristor.
  • a semi-controlled device drives a throttling device, and the energy for controlling the conduction of the discharge switch is provided by the first capacitor.
  • a semi-controlled device drives a throttling device. After the half-controlled device completes the conduction process, when the voltage across the half-controlled device is less than the on-state voltage of the semi-controlled switch, the discharge switch discharges the first capacitor.
  • a semi-controlled device driving throttling device for driving no-blind or low-blind region driving throttling control of a semi-controlled device the two ends of the semi-controlled device being two ends of a main circuit of a semi-controlled device, a semi-controlled type
  • the current through the first semiconductor switch is greater than the minimum drive current required to drive the semiconductor device to conduct.
  • a semi-controlled device drives a throttling device.
  • the first semiconductor switch is connected to a current source, and the DC source is used as a working power source.
  • a semi-controlled device drives a throttling device, and the discharge switch is composed of a transistor and a resistor.
  • a semi-controlled device drives a throttling device, the discharge switch is a third transistor, and the third transistor is connected to the first capacitor for discharging the first capacitor.
  • a semi-controlled device driving a throttle device further includes a first diode and a second current limiting component, wherein a collector of the third transistor is connected to a base of the third transistor through the second current limiting component, and the third transistor The base is connected to the emitter of the third transistor through the first diode, and the two ends of the first capacitor are respectively connected to the collector of the third transistor and the emitter of the third transistor, and the output signal of the voltage detecting unit passes the first two The pole tube and the first capacitor are transmitted to the control end of the first semiconductor switch.
  • a semi-controlled device drives a throttling device, and the second current limiting component is a resistor.
  • a semi-controlled device drives a throttling device, and the voltage detecting unit is composed of a transistor and a resistor.
  • a semi-controlled device drives a throttling device, wherein the first semiconductor switch is a first transistor, the control end of the first transistor is a base of the first transistor, the first semiconductor switch is connected to a current source, and the DC source is used as a working power source, DC The current output from the source is passed through the emitter of the first transistor, the collector of the first transistor, to the trigger pole of the semi-controlled device.
  • a semi-controlled device drives a throttling device, and the voltage detecting unit includes a second transistor and a first current limiting component.
  • a semi-controlled device drives a throttling device, a base of the second transistor is connected to a first end of the semi-controlled device through a first current limiting component, and a collector of the second transistor passes through the first capacitor and the first semiconductor switch The control terminal is connected, and the emitter of the second transistor is connected to the third end of the semi-controlled device.
  • a semi-controlled device driving a throttling device further includes a fourth transistor and a fifth transistor, wherein an emitter of the second transistor is connected to a base of the fourth transistor, and a base of the second transistor is connected to an emitter of the fourth transistor
  • the collector of the second transistor is connected to the control terminal of the first semiconductor switch through a first capacitor
  • the base of the fifth transistor is connected to the collector of the fourth transistor
  • the collector of the fifth transistor is connected to the emitter of the second transistor
  • the emitter of the fifth transistor is connected to the control terminal of the first semiconductor switch through the first capacitor.
  • a semi-controlled device drives a throttling device, and the first current limiting component is a resistor or a capacitor.
  • a half-controlled device driving throttle device includes a first capacitor C1, a first semiconductor switch Q1, and a control switch OPT1 (for controlling the zero-cross conduction of the semi-controlled device S1, and selecting according to requirements)
  • the discharge switch A, the voltage detecting unit B, the voltage detecting unit B are connected to both ends of the half-controlled device S1 to be driven, and the output signal of the voltage detecting unit B is transmitted to the control of the first semiconductor switch Q1 through the first capacitor C1.
  • the discharge switch A is connected to the first capacitor C1 for discharging the first capacitor C1.
  • the first semiconductor switch Q1 and the control switch OPT1 are connected in series in the driving circuit of the semi-controlled device S1, and the driving signal of the semi-controlled device S1.
  • the first semiconductor switch Q1 is less than the on-state voltage of the semi-controlled device S1 when the potential difference between the two terminals S1 is smaller than the on-state voltage of the semi-controlled device S1.
  • the first semiconductor switch Q1 is turned off after the half-controlled device S1 is turned on.
  • Working principle providing a control signal for controlling the control switch OPT1 to be turned on, the first semiconductor switch Q1 has a potential difference between the half-controlled device S1 and the on-state voltage of the semi-controlled device SCR1 is turned on, when the half-controlled device S1 is at both ends
  • the voltage reaches its on-state voltage the semi-controlled device S1 is turned on, and the first semiconductor switch Q1 is turned off after the semi-controlled device S1 is turned on (the first capacitor C1 is fully charged), and the throttling region or the low dead region throttling driving is achieved.
  • the discharge switch A discharges the first capacitor C1, ready for the next working process.
  • the half-controlled device By using the semi-controlled device of the present invention to drive the throttling device, the half-controlled device has a high dv/dt (voltage change rate) at both ends from the cut-off to the conduction interval, and the on-state voltage of the semi-controlled device after being turned on
  • the physical characteristics of the relatively stable value and the voltage across the capacitor cannot be abrupt, which can greatly reduce the design requirements of the circuit and reduce the cost of the circuit.
  • it has the advantages of low driving energy consumption, no or small driving blind zone, and the first use of the discharge switch. Capacitor discharge greatly improves the throttling effect.
  • Figure 1 shows the voltage waveforms at both ends of a half-controlled device driven by the prior art.
  • FIG. 2 is a circuit schematic diagram of an embodiment of a half-controlled device driving throttle device of the present invention.
  • FIG. 3 is a schematic circuit diagram of the second embodiment of the driving control device of the semi-controlled device of the present invention.
  • FIG. 4 is a schematic circuit diagram of a third embodiment of a half-controlled device driving throttle device of the present invention.
  • FIG. 2 One embodiment of the semi-controlled device driving throttle device of the present invention is shown in FIG. 2:
  • a semi-controlled device driving throttle device comprises a first capacitor C1, a first semiconductor switch Q1, a control switch OPT1 (for controlling a zero-controlled conduction of a semi-controlled device S1, and selecting according to requirements), a discharge switch A, a voltage
  • the detecting unit B, the voltage detecting unit B is connected to both ends (first anode, second anode) of the half-controlled device S1 (bidirectional thyristor) to be driven, and the output signal of the voltage detecting unit B is transmitted to the first capacitor C1 to
  • the control terminal of the first semiconductor switch Q1 the discharge switch A is connected to the first capacitor C1 for discharging the first capacitor C1
  • the first semiconductor switch Q1 and the control switch OPT1 are connected in series in the driving circuit of the semi-controlled device S1, half
  • the driving signal of the control device S1 (inputted by the J4 port) is sequentially transmitted to the control (trigger) pole of the semi-controlled device S1 through the first semiconductor switch Q1 and the control switch OPT
  • the first semiconductor switch Q1 is a first transistor Q1
  • the control terminal of the first transistor Q1 is the base of the first transistor Q1
  • the first semiconductor switch Q1 is connected to the DC source
  • the DC source is used as the working power source of the device of the present invention, the DC source
  • the output current is transmitted to the trigger pole of the semi-controlled device S1 through the emitter of the first transistor Q1, the collector of the first transistor Q1, and the control switch OPT1.
  • the discharge switch A is a third transistor Q3, and the third transistor Q3 is connected to the first capacitor C1 for discharging the first capacitor C1, and further includes a first diode D1 and a second current limiting element R2 (resistance),
  • the collector of the three transistor Q3 is connected to the base of the third transistor Q3 through the second current limiting element R2, and the base of the third transistor Q3 is connected to the emitter of the third transistor Q3 through the first diode D1, the first capacitor
  • the two ends of C1 are respectively connected to the collector of the third transistor Q3 and the emitter of the third transistor Q3, and the output signal of the voltage detecting unit B is transmitted to the first semiconductor switch Q1 through the first diode D1 and the first capacitor C1.
  • the energy for controlling the conduction of the discharge switch A is provided by the first capacitor C1.
  • the third transistor Q3 is a field effect transistor, the second current limiting element R2 can be omitted.
  • the voltage detecting unit B includes a second transistor Q2, a first current limiting element R1 (resistor, a capacitor may also be used), a fourth transistor Q4, a fifth transistor Q5, and a base of the second transistor Q2 passes through the first current limiting element.
  • R1 is connected to the first end (second anode) of the semi-controlled device S1
  • the collector of the second transistor Q2 is connected to the control end of the first semiconductor switch Q1 through the first diode D1 and the first capacitor C1
  • second The emitter of the transistor Q2 is connected to the third terminal (first anode) of the half-controlled device S1; the emitter of the second transistor Q2 is connected to the base of the fourth transistor Q4, and the base of the second transistor Q2 is connected to the fourth transistor.
  • the emitter of Q4 is connected, the base of the fifth transistor Q5 is connected to the collector of the fourth transistor Q4, the collector of the fifth transistor Q5 is connected to the emitter of the second transistor Q2, and the emitter of the fifth transistor Q5 is passed through the first
  • the capacitor C1 is connected to the control terminal of the first semiconductor switch Q1.
  • the J4 port of the first semiconductor switch is connected to the current source, and the DC source serves as a working power supply, and provides a control signal for controlling the conduction of the switch OPT1, and the output signal of the voltage detecting unit B passes through the first diode D1, the first The capacitor C1 controls the potential difference between the two terminals of the first semiconductor switch Q1 at the half-controlled device S1 to be smaller than the on-state voltage of the semi-controlled device S1, and the direction of the potential difference between the two ends of the semi-controlled device S1 satisfies the half-controlled device.
  • the control switch OPT1 does not obtain the conduction control signal, if the voltage across the half-controlled device S1 is high, the first capacitor C1 is in a fully charged state, the first semiconductor switch Q1 is turned off, and the control switch OPT1 is turned on.
  • the signal is low, the first semiconductor switch Q1 can be turned on only when the voltage across the half-controlled device S1 is low, so as to achieve the purpose of driving the semi-controlled device S1 with accurate zero-crossing.
  • FIG. 3 The second embodiment of the semi-controlled device driving throttle device of the present invention is shown in FIG. 3:
  • a semi-controlled device driving throttle device comprises a first capacitor C1, a first semiconductor switch Q1, a control switch OPT1 (for controlling a zero-controlled conduction of a semi-controlled device S1, and selecting according to requirements), a discharge switch A, a voltage
  • the detecting unit B, the voltage detecting unit B is connected to both ends (anode, cathode) of the half-controlled device S1 (single thyristor) to be driven, and the output signal of the voltage detecting unit B is transmitted to the first semiconductor through the first capacitor C1.
  • the control terminal of the switch Q1, the discharge switch A is connected to the first capacitor C1 for discharging the first capacitor C1
  • the first semiconductor switch Q1 and the control switch OPT1 are connected in series in the driving circuit of the semi-controlled device S1, the semi-controlled device
  • the driving signal of S1 (inputted by J4 port) is sequentially transmitted to the control (trigger) pole of the semi-controlled device S1 through the first semiconductor switch Q1 and the control switch OPT1, and the potential of the first semiconductor switch Q1 is at both ends of the semi-controlled device S1.
  • the first semiconductor switch Q1 is turned off after the half-controlled device S1 is turned on.
  • the first semiconductor switch Q1 is a first transistor Q1
  • the control terminal of the first transistor Q1 is the base of the first transistor Q1
  • the first semiconductor switch Q1 is connected to the DC source
  • the DC source is used as the working power source of the device of the present invention, the DC source
  • the output current is transmitted to the trigger pole of the semi-controlled device S1 through the emitter of the first transistor Q1, the collector of the first transistor Q1, and the control switch OPT1.
  • the discharge switch A is a third transistor Q3, and the third transistor Q3 is connected to the first capacitor C1 for discharging the first capacitor C1, and further includes a first diode D1 and a second current limiting element R2 (resistance),
  • the collector of the three transistor Q3 is connected to the base of the third transistor Q3 through the second current limiting element R2, and the base of the third transistor Q3 is connected to the emitter of the third transistor Q3 through the first diode D1, the first capacitor
  • the two ends of C1 are respectively connected to the collector of the third transistor Q3 and the emitter of the third transistor Q3, and the output signal of the voltage detecting unit B is transmitted to the first semiconductor switch Q1 through the first diode D1 and the first capacitor C1.
  • the energy for controlling the conduction of the discharge switch A is provided by the first capacitor C1.
  • the third transistor Q3 is a field effect transistor, the second current limiting element R2 can be omitted.
  • the voltage detecting unit B includes a second transistor Q2 and a first current limiting element R1 (resistor, a capacitor may also be used. When a capacitor is used, the capacitor needs to be connected to a discharge loop, such as the base of the second transistor Q2 of the voltage detecting unit B.
  • the pole and the emitter are connected to a diode, the base of the second transistor Q2 is connected to the first end (anode) of the semi-controlled device S1 through the first current limiting element R1, and the collector of the second transistor Q2 is passed through the first diode
  • the tube D1 the first capacitor C1 is connected to the control end of the first semiconductor switch Q1
  • the emitter of the second transistor Q2 is connected to the third end (cathode) of the semi-controlled device S1; when the control switch OPT1 does not receive the conduction control signal
  • the control switch OPT1 does not receive the conduction control signal
  • the J4 port of the first semiconductor switch is connected to the current source, and the DC source serves as a working power supply, and provides a control signal for controlling the conduction of the switch OPT1, and the output signal of the voltage detecting unit B passes through the first diode D1, the first The capacitor C1 controls the potential difference between the first semiconductor switch Q1 and the half-controlled device S1 to be smaller than the on-state voltage of the half-controlled device S1, and the direction of the potential difference between the two ends of the semi-controlled device S1 satisfies the half-controlled device S1.
  • the half-controlled device S1 When the voltage is turned on, the half-controlled device S1 is turned on when the voltage across the semi-controlled device S1 reaches its on-state voltage, and the first semiconductor switch Q1 is turned on after the half-controlled device S1 is turned on (the first capacitor C1 fully charged) cut-off, to achieve no dead zone or low dead zone throttling drive, after the semi-controlled device S1 is turned on, the voltage of the two-terminal device S1 is lower than the on-state voltage of the semi-controlled switch S1, the discharge switch A discharges the first capacitor C1 and prepares for the next working process.
  • the control switch OPT1 does not obtain the conduction control signal, if the forward voltage is higher at both ends of the semi-controlled device S1, the first capacitor C1 is in a fully charged state, the first semiconductor switch Q1 is turned off, and when the control switch OPT1 is turned on.
  • the first semiconductor switch Q1 can be turned on only when the voltage across the half-controlled device S1 is low, and the purpose of driving the semi-controlled device S1 with accurate zero-crossing is achieved.
  • the energy for controlling the conduction of the discharge switch A is provided by the first capacitor C1, and has the advantages of simple circuit, high stability, low power consumption, and low cost.
  • FIG. 4 The third embodiment of the semi-controlled device driving throttle device of the present invention is shown in FIG. 4:
  • a semi-controlled device driving throttle device comprises a first capacitor C1, a first semiconductor switch Q1, a control switch OPT1 (for controlling a zero-controlled conduction of a semi-controlled device S1, and selecting according to requirements), a discharge switch A, a voltage
  • the detecting unit B, the voltage detecting unit B is connected to both ends (anode, cathode) of the half-controlled device S1 (single thyristor) to be driven, and the output signal of the voltage detecting unit B is transmitted to the first semiconductor through the first capacitor C1.
  • the control terminal of the switch Q1, the discharge switch A is connected to the first capacitor C1 for discharging the first capacitor C1
  • the first semiconductor switch Q1 and the control switch OPT1 are connected in series in the driving circuit of the semi-controlled device S1, the semi-controlled device
  • the driving signal of S1 (inputted by J4 port) is sequentially transmitted to the control (trigger) pole of the semi-controlled device S1 through the first semiconductor switch Q1 and the control switch OPT1, and the potential of the first semiconductor switch Q1 is at both ends of the semi-controlled device S1.
  • the first semiconductor switch Q1 is turned off after the half-controlled device S1 is turned on.
  • the first semiconductor switch Q1 is a first transistor Q1
  • the control terminal of the first transistor Q1 is the base of the first transistor Q1
  • the first semiconductor switch Q1 is connected to the DC source
  • the DC source is used as the working power source of the device of the present invention, the DC source
  • the output current is transmitted to the trigger pole of the semi-controlled device S1 through the emitter of the first transistor Q1, the collector of the first transistor Q1, and the control switch OPT1.
  • the discharge switch A is a third transistor Q3.
  • the third transistor Q3 is connected to the first capacitor C1 for discharging the first capacitor C1, and further includes a sixth transistor Q6.
  • the two ends of the first capacitor C1 are respectively connected to the third transistor Q3.
  • the emitter is connected to the collector of the third transistor Q3, the base of the sixth transistor Q6 is connected to the emitter of the second transistor Q2, and the emitter of the sixth transistor Q6 is connected to the base of the second transistor Q2, the sixth transistor
  • the collector of Q6 is connected to the base of the third transistor Q3.
  • the voltage detecting unit B includes a second transistor Q2, a first current limiting element R1 (resistor, a capacitor may also be used), and a base of the second transistor Q2 passes through the first current limiting element R1 and the first of the semi-controlled device S1.
  • the terminal (anode) is connected, the collector of the second transistor Q2 is connected to the control terminal of the first semiconductor switch Q1 through the first capacitor C1, and the emitter of the second transistor Q2 is connected to the third terminal (cathode) of the semi-controlled device S1.
  • the control switch OPT1 does not obtain the conduction control signal, if the voltage across the half-controlled device S1 is high, the first capacitor C1 is in a fully charged state, the first semiconductor switch Q1 is turned off, and when the control switch OPT1 is turned on When the signal is controlled, the first semiconductor switch Q1 can be turned on only when the voltage across the half-controlled device S1 is low, and the purpose of driving the semi-controlled device S1 with accurate zero-crossing is achieved.
  • the J4 port of the first semiconductor switch is connected to the current source, and the DC source serves as a working power supply, and provides a control signal for controlling the conduction of the switch OPT1.
  • the output signal of the voltage detecting unit B controls the first semiconductor switch through the first capacitor C1.
  • the potential difference between Q1 and the half-controlled device S1 is smaller than the on-state voltage of the semi-controlled device S1, and the direction of the potential difference between the two ends of the semi-controlled device S1 is turned on when the direction of the potential difference of the semi-controlled device S1 is satisfied.
  • the semi-controlled device S1 When the voltage across the semi-controlled device S1 reaches its on-state voltage, the semi-controlled device S1 is turned on, and the first semiconductor switch Q1 is turned off after the semi-controlled device S1 is turned on (the first capacitor C1 is fully charged). No blind zone or low dead zone throttling drive, after the half-controlled device S1 completes a conduction process, the two ends of the semi-controlled device S1 exhibit a reverse voltage (the voltage across the half-controlled device S1 is less than its on-state voltage) When the discharge switch A discharges the first capacitor C1, it prepares for the next working process.
  • the control switch OPT1 does not obtain the conduction control signal, if the forward voltage is higher at both ends of the semi-controlled device S1, the first capacitor C1 is in a fully charged state, the first semiconductor switch Q1 is turned off, and when the control switch OPT1 is turned on.
  • the first semiconductor switch Q1 can be turned on only when the voltage across the half-controlled device S1 is low, and the purpose of driving the semi-controlled device S1 with accurate zero-crossing is achieved.
  • the first semiconductor switch Q1 is the first transistor Q1
  • the control end of the first semiconductor switch Q1 is the base of the first transistor Q1
  • the emitter of the first transistor Q1 is the driving signal input terminal
  • the first transistor Q1 is set.
  • the electrode is connected to the trigger pole of the semi-controlled device S1, and the turn-on voltage of the voltage detecting switch is smaller than the on-state voltage of the semi-controlled device;
  • the above transistor can be a triode or a field effect transistor, and the three electrodes are described here for simplicity and convenience.
  • the adjustment Before the voltage across the semi-controlled device reaches the on-state voltage of the semi-controlled device, the current through the first semiconductor switch is greater than the minimum drive current required to drive the semi-controlled device to conduct.
  • the above embodiment is a schematic diagram.
  • the first capacitor can be connected in series with the current limiting component and the transistor to improve the reliability of the circuit.
  • the discharge switch A and the voltage detecting unit B of the present invention are not limited. Other forms of transistor circuits can also be used for the circuits described in the above embodiments.
  • the present invention has the following advantages:
  • the semiconductor switch When the on-state voltage of the device is not greater than the half-controlled device, the semiconductor switch is turned on in advance, which overcomes the objective blind driving region of the prior art, and overcomes the prior art of the semi-controlled device from obtaining the driving signal to its conduction.
  • the driving blind zone caused by the response speed makes the semi-controlled device have no conduction blind zone or small conduction blind zone, which greatly reduces harmonic pollution and interference to the power grid, has good throttling effect, and reduces the energy consumption and volume of the driving source.
  • the first capacitor capacity can be selected from a few microfarads to a few microfarads. It can be made of ceramic chip capacitors, small in size and convenient for packaging.
  • the voltage across the half-controlled device is less than the on-state voltage of the semi-controlled switch, and the discharge switch is used to discharge the first capacitor.
  • the capacity requirement of the first capacitor is extremely small, and the drive is required.
  • the current has the advantages of high current rising rate and small pulse width, which greatly improves the throttling effect.
  • the driving signal of the semi-controlled device is sequentially transmitted to the control electrode of the semi-controlled device through the first semiconductor switch and the control switch, and has the advantages of accurate zero-crossing control, simple circuit and high stability.

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Abstract

半控型器件（S1）驱动节流装置是一种适用于半控型器件（S1）驱动回路中使用的节流装置，包括第一电容（C1）、第一半导体开关（Q1）、放电开关（A）、电压检测单元（B），电压检测单元（B）与所需驱动的半控型器件（S1）的两端连接，电压检测单元（B）的输出信号通过第一电容（C1）传递至第一半导体开关（Q1）的控制端，放电开关（A）与第一电容（C1）连接，用于对第一电容（C1）放电，第一半导体开关（Q1）串联在半控型器件（S1）的驱动回路中，半控型器件（S1）的驱动信号依次通过第一半导体开关（Q1）连接至半控型器件（S1）的控制极，第一半导体开关（Q1）在半控型器件（S1）的两端电位差小于半控型器件（S1）的通态电压时导通，第一半导体开关（Q1）在半控型器件（S1）导通后截止，该装置具有无控制盲区或控制盲区极小、节流效果好的优点。

Description

半控型器件驱动节流装置 技术领域
本发明半控型器件驱动节流装置是一种用于半控型器件驱动回路中使用,且特别是一种适用于晶闸管等半控型器件驱动回路中使用具有无控制盲区或控制盲区极小、节流效果好的驱动节流装置。
背景技术
目前在需要对负载频繁投切的电控系统中,广泛使用晶闸管(半控型器件)对阻性、感性或容性负载进行投切，为了减少晶闸管的驱动功率，市场上出现了用于减少驱动能耗的相关技术，如专利号为：ZL201110430747.7，专利名称为：触发节能装置及晶闸管开关，其所揭示的工作原理是：电压检测电路检测到晶闸管的主回路两端电压大于晶闸管的通态电压(一般为1.1到1.5V，原文件定义为导通电压降)时，控制电子开关导通，驱动信号通过电子开关驱动晶闸管导通，电压检测电路检测到晶闸管导通时，控制电子开关截止，虽其可以做到与传统晶闸管的驱动方式相比其驱动盲区更小，但仍然存在以下不足：
电压检测电路必须检测到晶闸管的主回路两端电压大于晶闸管通态电压时，才控制电子开关导通，由于滞后提供晶闸管驱动信号，已客观存在驱动盲区，并且晶闸管从其触发极得到驱动信号到晶闸管导通输出存在一定的响应时间，理论上无法做到对晶闸管无盲区驱动控制，见采用该技术的晶闸管导通时两端的电压波形图(如图1),可见超出晶闸管通态电压很多的电压尖峰。
发明内容
本发明的目的在于解决现有晶闸管驱动控制的不足而提供一种具有使得晶闸管等半控型器件，具有无导通盲区或导通盲区极小且节流效果好的半控型器件驱动节流装置。
实现本发明的目的是通过以下技术方案来达到的：
一种半控型器件驱动节流装置，包括第一电容、第一半导体开关、放电开关、一电压检测单元，电压检测单元与所需驱动的半控型器件的两端连接，电压检测单元的输出信号通过第一电容传递至第一半导体开关的控制端，放电开关与第一 电容连接，用于对第一电容放电，第一半导体开关串联在半控型器件的驱动回路中，第一半导体开关在半控型器件的两端电位差小于半控型器件的通态电压时导通，第一半导体开关在半控型器件导通后截止。
一种半控型器件驱动节流装置，第一半导体开关在半控型器件的两端电位差小于半控型器件的通态电压，且半控型器件的两端电位差的方向满足半控型器件的导通电压方向时导通，第一半导体开关在半控型器件导通后截止。
一种半控型器件驱动节流装置，半控型器件为单向晶闸管或双向晶闸管。
一种半控型器件驱动节流装置，控制放电开关的导通的能量由第一电容提供。
一种半控型器件驱动节流装置，半控型器件完成导通过程后，半控型器件的两端电压小于半控型开关的通态电压时，放电开关对第一电容放电。
一种半控型器件驱动节流装置，用于对半控型器件的无盲区或低盲区驱动节流控制，半控型器件的两端为半控型器件的主回路两端，半控型器件的两端电压达到半控型器件的通态电压前，通过第一半导体开关的电流大于驱动半控型器件导通所需的最小驱动电流。
一种半控型器件驱动节流装置，第一半导体开关连接一直流源，直流源作为工作电源。
一种半控型器件驱动节流装置，放电开关由晶体管、电阻组成。
一种半控型器件驱动节流装置，放电开关为第三晶体管，第三晶体管与第一电容连接，用于对第一电容放电。
一种半控型器件驱动节流装置，还包括第一二极管、第二限流元件，第三晶体管的集电极通过第二限流元件与第三晶体管的基极连接，第三晶体管的基极通过第一二极管与第三晶体管的发射极连接，第一电容的两端分别与第三晶体管的集电极、第三晶体管的发射极连接，电压检测单元的输出信号通过第一二极管、第一电容传递至第一半导体开关的控制端。
一种半控型器件驱动节流装置，第二限流元件为一电阻。
一种半控型器件驱动节流装置，电压检测单元由晶体管、电阻组成。
一种半控型器件驱动节流装置，第一半导体开关为第一晶体管，第一晶体管的控制端为第一晶体管的基极，第一半导体开关连接一直流源，直流源作为工作电源，直流源输出的电流通过第一晶体管的发射极、第一晶体管的集电极传递至 半控型器件的触发极。
一种半控型器件驱动节流装置，电压检测单元包括第二晶体管、第一限流元件。
一种半控型器件驱动节流装置，第二晶体管的基极通过第一限流元件与半控型器件的第一端连接，第二晶体管的集电极通过第一电容与第一半导体开关的控制端连接，第二晶体管的发射极与半控型器件的第三端连接。
一种半控型器件驱动节流装置，还包括第四晶体管、第五晶体管，第二晶体管的发射极与第四晶体管的基极连接，第二晶体管的基极与第四晶体管的发射极连接，第二晶体管的集电极通过第一电容与第一半导体开关的控制端连接，第五晶体管的基极与第四晶体管的集电极连接，第五晶体管的集电极与第二晶体管的发射极连接，第五晶体管的发射极通过第一电容与第一半导体开关的控制端连接。
一种半控型器件驱动节流装置，第一限流元件为一电阻，或为一电容。
一种包括以上所述的半控型器件驱动节流装置，还包括一用于控制半控型器件过零导通的控制开关，半控型器件的驱动信号依次通过第一半导体开关、控制开关连接至半控型器件的触发极。
一种半控型器件驱动节流装置，如图2所示，包括第一电容C1、第一半导体开关Q1、控制开关OPT1(用于控制半控型器件S1过零导通，根据需要选用)、放电开关A、电压检测单元B，电压检测单元B与所需驱动的半控型器件S1的两端连接，电压检测单元B的输出信号通过第一电容C1传递至第一半导体开关Q1的控制端，放电开关A与第一电容C1连接，用于对第一电容C1放电，第一半导体开关Q1、控制开关OPT1串联在半控型器件S1的驱动回路中，半控型器件S1的驱动信号依次通过第一半导体开关Q1、控制开关OPT1连接至半控型器件S1的控制极，第一半导体开关Q1在半控型器件S1的两端电位差小于半控型器件S1的通态电压时导通，第一半导体开关Q1在半控型器件S1导通后截止。
工作原理：提供控制控制开关OPT1导通的控制信号，第一半导体开关Q1在半控型器件S1两端电位差小于半控型器件SCR1的通态电压导通，当半控型器件S1两端电压达到其通态电压时，半控型器件S1导通，第一半导体开关Q1在半控型器件S1导通后(第一电容C1充满电)截止，达到无盲区或低盲区节流驱动的作用，半控型器件S1完成一个导通过程后，半控型器件S1的两端电压小于 半控型开关S1的通态电压时，放电开关A对第一电容C1放电，准备下一个工作过程。
采用本发明半控型器件驱动节流装置，利用半控型器件从截止到导通区间其两端存在很高的dv/dt(电压变化率)、半控型器件导通后其通态电压呈现较为稳定值及电容两端电压不能突变的物理特征，可以大大降低电路的设计要求，降低电路的成本，同时具有驱动能耗小、驱动盲区无或小的优点，同时利用放电开关对第一电容放电，极大的提升了节流效果。
附图说明
图1采用先前相关技术驱动的半控型器件导通时两端的电压波形图。
图2本发明半控型器件驱动节流装置实施例之一电路原理图。
图3本发明半控型器件驱动节流装置实施例之二电路原理图。
图4本发明半控型器件驱动节流装置实施例之三电路原理图。
具体实施方式
本发明半控型器件驱动节流装置的实施例之一，如图2所示：
一种半控型器件驱动节流装置，包括第一电容C1、第一半导体开关Q1、控制开关OPT1(用于控制半控型器件S1过零导通，根据需要选用)、放电开关A、电压检测单元B，电压检测单元B与所需驱动的半控型器件S1(双向晶闸管)的两端(第一阳极、第二阳极)连接，电压检测单元B的输出信号通过第一电容C1传递至第一半导体开关Q1的控制端，放电开关A与第一电容C1连接，用于对第一电容C1放电，第一半导体开关Q1、控制开关OPT1串联在半控型器件S1的驱动回路中，半控型器件S1的驱动信号(由J4端口输入)依次通过第一半导体开关Q1、控制开关OPT1传递至半控型器件S1的控制(触发)极，第一半导体开关Q1在半控型器件S1的两端电位差小于半控型器件S1的通态电压时导通，第一半导体开关Q1在半控型器件S1导通后截止。
第一半导体开关Q1：为第一晶体管Q1，第一晶体管Q1的控制端为第一晶体管Q1的基极，第一半导体开关Q1连接一直流源，直流源作为本发明装置的工作电源，直流源输出的电流通过第一晶体管Q1的发射极、第一晶体管Q1的集电极、控制开关OPT1传递至半控型器件S1的触发极。
放电开关A：为第三晶体管Q3，第三晶体管Q3与第一电容C1连接，用于对第一电容C1放电，还包括第一二极管D1、第二限流元件R2(电阻)，第三晶体管Q3的集电极通过第二限流元件R2与第三晶体管Q3的基极连接，第三晶体管Q3的基极通过第一二极管D1与第三晶体管Q3的发射极连接，第一电容C1的两端分别与第三晶体管Q3的集电极、第三晶体管Q3的发射极连接，电压检测单元B的输出信号通过第一二极管D1、第一电容C1传递至第一半导体开关Q1的控制端，控制放电开关A的导通的能量由第一电容C1提供，注：当第三晶体管Q3采用场效应管时第二限流元件R2可省略。
电压检测单元B：包括第二晶体管Q2、第一限流元件R1(电阻，也可以采用一电容)、第四晶体管Q4、第五晶体管Q5，第二晶体管Q2的基极通过第一限流元件R1与半控型器件S1的第一端(第二阳极)连接，第二晶体管Q2的集电极通过第一二极管D1、第一电容C1与第一半导体开关Q1的控制端连接，第二晶体管Q2的发射极与半控型器件S1的第三端(第一阳极)连接；第二晶体管Q2的发射极与第四晶体管Q4的基极连接，第二晶体管Q2的基极与第四晶体管Q4的发射极连接，第五晶体管Q5的基极与第四晶体管Q4的集电极连接，第五晶体管Q5的集电极与第二晶体管Q2的发射极连接，第五晶体管Q5的发射极通过第一电容C1与第一半导体开关Q1的控制端连接。
工作原理：第一半导体开关的J4端口连接一直流源，该直流源作为工作电源，提供控制控制开关OPT1导通的控制信号，电压检测单元B的输出信号通过第一二极管D1、第一电容C1控制第一半导体开关Q1在半控型器件S1的两端电位差小于半控型器件S1的通态电压导通，且半控型器件S1的两端电位差的方向满足半控型器件S1的导通电压方向时导通，当半控型器件S1两端电压达到其通态电压时，半控型器件S1导通，第一半导体开关Q1在半控型器件S1导通后(第一电容C1充满电)截止，达到无盲区或低盲区节流驱动的作用，半控型器件S1完成一个导通过程后，半控型器件S1的两端电压小于半控型开关S1的通态电压时，放电开关A对第一电容C1放电，准备下一个工作过程。
控制开关OPT1没有得到导通控制信号时，如在半控型器件S1的两端电压较高时，第一电容C1为充满电状态，第一半导体开关Q1截止，当控制开关OPT1得到导通控制信号时，只有在半控型器件S1的两端电压较低时，第一半导体开 关Q1才能导通，达到准确过零驱动半控型器件S1的目的。
本发明半控型器件驱动节流装置的实施例之二，如图3所示：
一种半控型器件驱动节流装置，包括第一电容C1、第一半导体开关Q1、控制开关OPT1(用于控制半控型器件S1过零导通，根据需要选用)、放电开关A、电压检测单元B，电压检测单元B与所需驱动的半控型器件S1(单向晶闸管)的两端(阳极、阴极)连接，电压检测单元B的输出信号通过第一电容C1传递至第一半导体开关Q1的控制端，放电开关A与第一电容C1连接，用于对第一电容C1放电，第一半导体开关Q1、控制开关OPT1串联在半控型器件S1的驱动回路中，半控型器件S1的驱动信号(由J4端口输入)依次通过第一半导体开关Q1、控制开关OPT1传递至半控型器件S1的控制(触发)极，第一半导体开关Q1在半控型器件S1的两端电位差小于半控型器件S1的通态电压时导通，第一半导体开关Q1在半控型器件S1导通后截止。
第一半导体开关Q1：为第一晶体管Q1，第一晶体管Q1的控制端为第一晶体管Q1的基极，第一半导体开关Q1连接一直流源，直流源作为本发明装置的工作电源，直流源输出的电流通过第一晶体管Q1的发射极、第一晶体管Q1的集电极、控制开关OPT1传递至半控型器件S1的触发极。
放电开关A：为第三晶体管Q3，第三晶体管Q3与第一电容C1连接，用于对第一电容C1放电，还包括第一二极管D1、第二限流元件R2(电阻)，第三晶体管Q3的集电极通过第二限流元件R2与第三晶体管Q3的基极连接，第三晶体管Q3的基极通过第一二极管D1与第三晶体管Q3的发射极连接，第一电容C1的两端分别与第三晶体管Q3的集电极、第三晶体管Q3的发射极连接，电压检测单元B的输出信号通过第一二极管D1、第一电容C1传递至第一半导体开关Q1的控制端，控制放电开关A的导通的能量由第一电容C1提供，注：当第三晶体管Q3采用场效应管时第二限流元件R2可省略。
电压检测单元B：包括第二晶体管Q2、第一限流元件R1(电阻，也可以采用一电容，当采用电容时，该电容需连接放电回路，如电压检测单元B的第二晶体管Q2的基极、发射极连接一二极管)，第二晶体管Q2的基极通过第一限流元件R1与半控型器件S1的第一端(阳极)连接，第二晶体管Q2的集电极通过第一二极管D1、第一电容C1与第一半导体开关Q1的控制端连接，第二晶体管Q2 的发射极与半控型器件S1的第三端(阴极)连接；控制开关OPT1没有得到导通控制信号时，如在半控型器件S1的两端电压较高时，第一电容C1为充满电状态，第一半导体开关Q1截止，当控制开关OPT1得到导通控制信号时，只有在半控型器件S1的两端电压较低时，第一半导体开关Q1才能导通，达到准确过零驱动半控型器件S1的目的。
工作原理：第一半导体开关的J4端口连接一直流源，该直流源作为工作电源，提供控制控制开关OPT1导通的控制信号，电压检测单元B的输出信号通过第一二极管D1、第一电容C1控制第一半导体开关Q1在半控型器件S1的两端电位差小于半控型器件S1的通态电压，且半控型器件S1的两端电位差的方向满足半控型器件S1的导通电压方向时导通，当半控型器件S1两端电压达到其通态电压时，半控型器件S1导通，第一半导体开关Q1在半控型器件S1导通后(第一电容C1充满电)截止，达到无盲区或低盲区节流驱动的作用，半控型器件S1导通后，半控型器件S1的两端电压小于半控型开关S1的通态电压时，放电开关A对第一电容C1放电，准备下一个工作过程。
控制开关OPT1没有得到导通控制信号时，如在半控型器件S1的两端正向电压较高时，第一电容C1为充满电状态，第一半导体开关Q1截止，当控制开关OPT1得到导通控制信号时，只有在半控型器件S1的两端电压较低时，第一半导体开关Q1才能导通，达到准确过零驱动半控型器件S1的目的。
以上实施例，控制放电开关A的导通的能量由第一电容C1提供，具有电路简单、稳定度高、功耗及成本低的优点。
本发明半控型器件驱动节流装置的实施例之三，如图4所示：
一种半控型器件驱动节流装置，包括第一电容C1、第一半导体开关Q1、控制开关OPT1(用于控制半控型器件S1过零导通，根据需要选用)、放电开关A、电压检测单元B，电压检测单元B与所需驱动的半控型器件S1(单向晶闸管)的两端(阳极、阴极)连接，电压检测单元B的输出信号通过第一电容C1传递至第一半导体开关Q1的控制端，放电开关A与第一电容C1连接，用于对第一电容C1放电，第一半导体开关Q1、控制开关OPT1串联在半控型器件S1的驱动回路中，半控型器件S1的驱动信号(由J4端口输入)依次通过第一半导体开关Q1、控制开关OPT1传递至半控型器件S1的控制(触发)极，第一半导体开关Q1在 半控型器件S1的两端电位差小于半控型器件S1的通态电压时导通，第一半导体开关Q1在半控型器件S1导通后截止。
第一半导体开关Q1：为第一晶体管Q1，第一晶体管Q1的控制端为第一晶体管Q1的基极，第一半导体开关Q1连接一直流源，直流源作为本发明装置的工作电源，直流源输出的电流通过第一晶体管Q1的发射极、第一晶体管Q1的集电极、控制开关OPT1传递至半控型器件S1的触发极。
放电开关A：为第三晶体管Q3，第三晶体管Q3与第一电容C1连接，用于对第一电容C1放电，还包括第六晶体管Q6，第一电容C1的两端分别与第三晶体管Q3的发射极、第三晶体管Q3的集电极连接，第六晶体管Q6的基极与第二晶体管Q2的发射极连接，第六晶体管Q6的发射极与第二晶体管Q2的基极连接，第六晶体管Q6的集电极与第三晶体管Q3的基极连接。
电压检测单元B：包括第二晶体管Q2、第一限流元件R1(电阻，也可以采用一电容)，第二晶体管Q2的基极通过第一限流元件R1与半控型器件S1的第一端(阳极)连接，第二晶体管Q2的集电极通过第一电容C1与第一半导体开关Q1的控制端连接，第二晶体管Q2的发射极与半控型器件S1的第三端(阴极)连接；控制开关OPT1没有得到导通控制信号时，如在半控型器件S1的两端电压较高时，第一电容C1为充满电状态，第一半导体开关Q1截止，当控制开关OPT1得到导通控制信号时，只有在半控型器件S1的两端电压较低时，第一半导体开关Q1才能导通，达到准确过零驱动半控型器件S1的目的。
工作原理：第一半导体开关的J4端口连接一直流源，该直流源作为工作电源，提供控制控制开关OPT1导通的控制信号，电压检测单元B的输出信号通过第一电容C1控制第一半导体开关Q1在半控型器件S1的两端电位差小于半控型器件S1的通态电压，且半控型器件S1的两端电位差的方向满足半控型器件S1的导通电压方向时导通，当半控型器件S1两端电压达到其通态电压时，半控型器件S1导通，第一半导体开关Q1在半控型器件S1导通后(第一电容C1充满电)截止，达到无盲区或低盲区节流驱动的作用，半控型器件S1完成一个导通过程后，半控型器件S1的两端呈现反向电压(半控型器件S1的两端电压小于其通态电压)时，放电开关A对第一电容C1放电，准备下一个工作过程。
控制开关OPT1没有得到导通控制信号时，如在半控型器件S1的两端正向电 压较高时，第一电容C1为充满电状态，第一半导体开关Q1截止，当控制开关OPT1得到导通控制信号时，只有在半控型器件S1的两端电压较低时，第一半导体开关Q1才能导通，达到准确过零驱动半控型器件S1的目的。
以上实施例，第一半导体开关Q1为第一晶体管Q1，第一半导体开关Q1的控制端为第一晶体管Q1的基极，第一晶体管Q1的发射极为驱动信号输入端，第一晶体管Q1的集电极与半控型器件S1的触发极连接，电压检测开关的开启电压小于半控型器件的通态电压；以上晶体管可以为三极管，也可以为场效应管，为简洁方便描述其三个电极这里统一定义为基极(等同于栅极)、发射极(等同于源极)、集电极(等同于漏极)；为达到对半控型器件的无盲区或低盲区驱动节流控制，调整本装置在半控型器件的两端电压达到半控型器件的通态电压前，通过第一半导体开关的电流大于驱动半控型器件导通所需的最小驱动电流。为简洁方便描述和理解，以上实施例附图为原理图，实际应用时，可以第一电容串联限流元件及晶体管连接电阻，提高电路可靠性；本发明放电开关A、电压检测单元B不限于以上实施例描述的电路，也可以采用其它形式的晶体管电路。
综上所述本发明具有以下优点：
1.电路简单、可靠性高、体积小、功耗小、成本低；
2.在不大于半控型器件的通态电压时半导体开关提前导通，克服了先前相关技术客观存在的驱动盲区，并克服了半控型器件先前技术由得到驱动信号到其导通存在的响应速度带来的驱动盲区，使得半控型器件无导通盲区或导通盲区极小，大大减少对电网的谐波污染和干扰，节流效果好，减少驱动源的能耗和体积。
4.第一电容容量可以在零点几微法到几微法之间选取，采用陶瓷贴片电容即可，体积小，方便封装。
5.半控型器件完成一个导通过程后，半控型器件的两端电压小于半控型开关的通态电压时采用放电开关对第一电容放电，第一电容的容量要求极小，驱动电流具有的电流上升速率高、脉冲宽度小的优点，极大提高了节流效果。
6.半控型器件的驱动信号依次通过第一半导体开关、控制开关传递至半控型器件的控制极，具有过零控制准确、电路简单、稳定性高的优点。

Claims (18)

  1. 一种半控型器件驱动节流装置，其特征是：包括第一电容、第一半导体开关、放电开关、一电压检测单元，所述电压检测单元与所需驱动的半控型器件的两端连接，所述电压检测单元的输出信号通过所述第一电容传递至所述第一半导体开关的控制端，所述放电开关与所述第一电容连接，用于对所述第一电容放电，所述第一半导体开关串联在所述半控型器件的驱动回路中，所述第一半导体开关在所述半控型器件的两端电位差小于所述半控型器件的通态电压时导通，所述第一半导体开关在所述半控型器件导通后截止。
  2. 根据权利要求1所述的半控型器件驱动节流装置，其特征是：所述第一半导体开关在所述半控型器件的两端电位差小于所述半控型器件的通态电压，且所述半控型器件的两端电位差的方向满足所述半控型器件的导通电压方向时导通，所述第一半导体开关在所述半控型器件导通后截止。
  3. 根据权利要求1所述的半控型器件驱动节流装置，其特征是：所述半控型器件为单向晶闸管或双向晶闸管。
  4. 根据权利要求1所述的半控型器件驱动节流装置，其特征是：控制所述放电开关的导通的能量由所述第一电容提供。
  5. 根据权利要求1所述的半控型器件驱动节流装置，其特征是：所述半控型器件完成导通过程后，所述半控型器件的两端电压小于所述半控型开关的通态电压时，所述放电开关对所述第一电容放电。
  6. 根据权利要求1所述的半控型器件驱动节流装置，其特征是：用于对所述半控型器件的无盲区或低盲区驱动节流控制，所述半控型器件的两端为所述半控型器件的主回路两端，所述半控型器件的两端电压达到所述半控型器件的通态电压前，通过所述第一半导体开关的电流大于驱动所述半控型器件导通所需的最小驱动电流。
  7. 根据权利要求1所述的半控型器件驱动节流装置，其特征是：所述第一半导体开关连接一直流源，所述直流源作为工作电源。
  8. 根据权利要求1所述的半控型器件驱动节流装置，其特征是：所述放电开关由晶体管、电阻组成。
  9. 根据权利要求1所述的半控型器件驱动节流装置，其特征是：所述放电开关为第三晶体管，所述第三晶体管与所述第一电容连接，用于对所述第一电容放电。
  10. 根据权利要求9所述的半控型器件驱动节流装置，其特征是：还包括第一二极管、第二限流元件，所述第三晶体管的集电极通过所述第二限流元件与所述第三晶体管的基极连接，所述第三晶体管的基极通过所述第一二极管与所述第三晶体管的发射极连接，所述第一电容 的两端分别与所述第三晶体管的集电极、所述第三晶体管的发射极连接，所述电压检测单元的输出信号通过所述第一二极管、所述第一电容传递至所述第一半导体开关的控制端。
  11. 根据权利要求10所述的半控型器件驱动节流装置，其特征是：所述第二限流元件为一电阻。
  12. 根据权利要求1所述的半控型器件驱动节流装置，其特征是：所述电压检测单元由晶体管、电阻组成。
  13. 根据权利要求1所述的半控型器件驱动节流装置，其特征是：所述第一半导体开关为第一晶体管，所述第一晶体管的控制端为所述第一晶体管的基极，所述第一半导体开关连接一直流源，所述直流源作为工作电源，所述直流源输出的电流通过所述第一晶体管的发射极、所述第一晶体管的集电极传递至所述半控型器件的触发极。
  14. 根据权利要求1所述的半控型器件驱动节流装置，其特征是：所述电压检测单元包括第二晶体管、第一限流元件。
  15. 根据权利要求14所述的半控型器件驱动节流装置，其特征是：所述第二晶体管的基极通过所述第一限流元件与所述半控型器件的第一端连接，所述第二晶体管的集电极通过所述第一电容与所述第一半导体开关的控制端连接，所述第二晶体管的发射极与所述半控型器件的第三端连接。
  16. 根据权利要求14所述的半控型器件驱动节流装置，其特征是：还包括第四晶体管、第五晶体管，所述第二晶体管的发射极与所述第四晶体管的基极连接，所述第二晶体管的基极与所述第四晶体管的发射极连接，所述第二晶体管的集电极通过所述第一电容与所述第一半导体开关的控制端连接，所述第五晶体管的基极与所述第四晶体管的集电极连接，所述第五晶体管的集电极与所述第二晶体管的发射极连接，所述第五晶体管的发射极通过所述第一电容与所述第一半导体开关的控制端连接。
  17. 根据权利要求14所述的半控型器件驱动节流装置，其特征是：所述第一限流元件为一电阻，或为一电容。
  18. 根据权利要求1至17任一项所述的半控型器件驱动节流装置，其特征是：还包括一用于控制所述半控型器件过零导通的控制开关，所述半控型器件的驱动信号依次通过所述第一半导体开关、所述控制开关连接至所述半控型器件的触发极。
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