WO2018161431A1 - Memory-based circuit board - Google Patents

Memory-based circuit board Download PDF

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Publication number
WO2018161431A1
WO2018161431A1 PCT/CN2017/083834 CN2017083834W WO2018161431A1 WO 2018161431 A1 WO2018161431 A1 WO 2018161431A1 CN 2017083834 W CN2017083834 W CN 2017083834W WO 2018161431 A1 WO2018161431 A1 WO 2018161431A1
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WIPO (PCT)
Prior art keywords
memory
signal
bit
processor
data
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PCT/CN2017/083834
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French (fr)
Chinese (zh)
Inventor
叶勇云
Original Assignee
深圳市大疆创新科技有限公司
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Application filed by 深圳市大疆创新科技有限公司 filed Critical 深圳市大疆创新科技有限公司
Priority to CN201780030651.7A priority Critical patent/CN109154923A/en
Publication of WO2018161431A1 publication Critical patent/WO2018161431A1/en

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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38Information transfer, e.g. on bus
    • G06F13/40Bus structure
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38Information transfer, e.g. on bus
    • G06F13/42Bus transfer protocol, e.g. handshake; Synchronisation
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components

Definitions

  • the present invention relates to memory wiring techniques, and more particularly to a memory based circuit board.
  • PCBs printed circuit boards
  • a memory is usually disposed on a PCB, for example, a Double Data Rate Dynamic Random Access Memory (“DDR”) and a processor that controls the operation of the memory.
  • DDR Double Data Rate Dynamic Random Access Memory
  • the corresponding pin distribution between the processor and the memory is often difficult to achieve a one-to-one correspondence without a crossover, which causes a chaotic problem when the board is routed, and a chaotic trace is likely to cause Interference between signals affects signal quality; if you want to avoid crossover between processor and memory and reduce interference between signals, you need to extend the length of the trace on the board. The longer the trace takes up more circuits.
  • the area of the board leads to an increase in the size of the board.
  • the present invention provides a memory-based circuit board for solving the technical problem of the chaos of the electrical signal between the memory on the circuit board and the processor and the signal interference caused by the prior art.
  • the present invention provides a memory-based circuit board on which the memory is disposed, and a processor for controlling the memory;
  • the memory and the processor each include at least two sets of signal lines
  • a line group identifier of each group of signal lines on the memory corresponds to a line group identifier of each group of signal lines on the processor
  • the signal line of the memory and the signal line of the processor are not cross-connected on the same layer circuit board; wherein the line group identifier of the connected memory and the line group identifier of the processor are Non-corresponding line group ID.
  • each group of signal lines includes a data signal with a preset bit capacity, and further includes a control signal for transmitting the data signal for controlling the preset bit capacity.
  • control signal includes at least: a data synchronization signal control bit; and a data mask signal control bit.
  • each bit of the data signal of the preset bit capacity in the two connected signal lines is connected to each other in an arbitrary order;
  • the data synchronization signal control bits in the two connected signal lines are correspondingly connected;
  • the data mask signal control bits in the two connected signal lines are correspondingly connected.
  • the memory is a DDR chip
  • the DDR chip is a DDR of a 16-bit data signal
  • the DDR chip and the processor both include a high 8-bit signal line and a low 8-bit signal line;
  • a high 8-bit signal line of the DDR chip is connected to a lower 8-bit signal line of the processor;
  • the lower 8-bit signal line of the DDR chip is connected to the upper 8-bit signal line of the processor.
  • the low 8-bit signal line includes an 8-bit data signal of DQ0 to DQ7;
  • the high 8-bit signal line includes an 8-bit data signal of DQ8 to DQ15;
  • the data signals of the DQ0 to DQ7 of the DDR chip and the data signals of the DQ8 to DQ15 of the processor may be connected in an arbitrary order;
  • the data signals of the DQ8 to DQ15 of the DDR chip and the data signals of the DQ0 to DQ7 of the processor may be connected in an arbitrary order.
  • the high 8-bit signal line includes a data synchronization signal control bit UDQS for controlling the DQ8 to DQ15; and a data mask signal control bit UDQM for controlling the DQ8 to DQ15;
  • the lower 8-bit signal line includes a data synchronization signal control bit LDQS for controlling the DQ0 to DQ7; and a data mask signal control bit LDQM for controlling the DQ0 to DQ7;
  • the UDQS of the DDR chip is connected to the LDQS of the processor, the UDQM of the DDR chip is connected to the LDQM of the processor; the LDQS of the DDR chip and the processing The UDQS connection of the device, the DDR chip
  • the LDQM is coupled to the UDQM of the processor.
  • the memory is any one of the following chip types: a DDR chip with a 16-bit data signal, a DDR chip with a 32-bit data signal, and a DDR chip with a 64-bit data signal.
  • the memory is any one of the following chip types: DDR1, DDR2, DDR3, DDR4.
  • a memory-based circuit board provided by the present invention, a memory is disposed on the circuit board, and a processor for controlling the memory is further disposed; the memory and the processor each include at least two sets of signal lines; wherein each group on the memory The line group identifier of the signal line corresponds to the line group identifier of each group of signal lines on the processor; the signal line of the memory and the signal line of the processor are not cross-connected on the same layer circuit board; wherein, the line of the connected memory line The group ID and the line group ID of the processor are non-corresponding line group identifiers. Therefore, by exchanging the signal lines between the memory and the processor in units of signal lines, the routing of the signal lines between the memory and the processor is facilitated, and the signal lines between the two are not crossed, thereby ensuring the communication quality between the signals.
  • FIG. 1 is a schematic structural diagram of a memory-based circuit board according to an exemplary embodiment of the present invention
  • FIG. 2 is a schematic structural diagram of a memory-based circuit board according to another exemplary embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of a memory-based circuit board according to another exemplary embodiment of the present invention.
  • Circuit board 2. Memory/DDR chip; 3. Processor; 4. Signal line pin; 5. Line group.
  • FIG. 1 is a schematic structural diagram of a memory-based circuit board according to an exemplary embodiment of the present invention.
  • a memory-based circuit board 1 is provided in the embodiment, and a memory 2 is disposed on the circuit board 1 .
  • a processor 3 for controlling the memory 2 is also provided; the memory 2 and the processor 3 each include at least two sets of signal lines; a line group identification of each group of signal lines on the memory 2 and a line group of each set of signal lines on the processor 3.
  • the identification wherein the pins of the signal line are indicated by the numeral 4, the line group of the signal line is indicated by the numeral 5, and the identification of the different line groups is distinguished by the capital letters of A, B, C, D, ... .
  • the signal line of the memory 2 and the signal line of the processor 3 are not cross-connected on the same layer circuit board; wherein the line group identifier of the connected memory 2 and the line group identifier of the processor 3 are non-corresponding line group identifiers.
  • the circuit board 1 in FIG. 1 may be a printed circuit board (PCB), a flexible printed circuit board (FPC), a single-panel, a double-panel, a multi-layer circuit board, etc. This is not specifically limited, and those skilled in the art can select the corresponding circuit board according to the circuit characteristics.
  • the circuit board 1 is provided with at least a memory 2, and a processor 3 that controls the memory 2 to perform an information storage operation. If the processor 3 needs to correctly deposit or retrieve information such as original data, program, intermediate operation result, final running result, etc., it is necessary to put each signal line pin 4 on the memory 2 chip and the processor 3 chip. Corresponding connection of each signal line pin 4, that is, as shown in FIG.
  • each data signal pin 4 in the line group 5 (A) of the memory 2 and the line group 5 (A) of the processor 3 The respective data signal pins 4 are correspondingly connected, thereby ensuring that the processor 3 can store the data information in the correct position in the memory 2, and can accurately extract the data information from the exact position in the memory 2. Therefore, as shown in FIG. 1, the line group identification of each group of signal lines on the memory 2 corresponds to the line group identification of each group of signal lines on the processor 3, for example, the line group 5 (A) on the memory 2 corresponds to processing.
  • Line group 5 (A) on device 3 line group 5 (B) on memory 2 corresponds to line group 5 (B) on processor 3
  • line group 5 (C) on memory 2 corresponds to processor 3
  • Line group 5 (C) on memory 2 corresponds to line group 5 (D) on processor 3.
  • Only four sets of line sets 5 are shown in FIG. 1, which are not limited to the number of line sets 5 included in the circuit board 1 in this embodiment. Both the memory 2 and the processor 3 in this embodiment include two sets. Or more than two sets of signal line groups 5. Assume that the layout of the line group 5 is as shown in FIG. 1, and if the shortest path is used, the line groups 5 (A), 5 (B), 5 (C), 5 (D) and the processor 3 on the memory 2 are used.
  • the line group 5 (B) of the memory 2 can be connected to the line group 5 (C) of the processor, the line group 5 (C) of the memory 2 and the line group 5 of the processor (B) ), the line group 5 (A) of the memory 2 is still connected to the line group 5 (A) of the processor, and the line group 5 (D) of the memory 2 is still connected to the line group 5 (D) of the processor, ensuring the memory
  • the signal connections between the 2 and the processor 3 are the shortest and do not intersect each other.
  • the memory-based circuit board of this embodiment is provided with a memory on the circuit board, and a processor for controlling the memory; the memory and the processor each include at least two sets of signal lines; wherein each set of signals on the memory
  • the line group identifier of the line corresponds to the line group identifier of each group of signal lines on the processor; the signal line of the memory and the signal line of the processor are not cross-connected on the same layer circuit board; wherein, the line group of the connected memory
  • the line group identifier that identifies the processor and the processor is a non-corresponding line group identifier. Therefore, by exchanging the signal lines between the memory and the processor in units of signal lines, the routing of the signal lines between the memory and the processor is facilitated, and the signal lines between the two are not crossed, thereby ensuring the communication quality between the signals.
  • FIG. 2 is a schematic structural diagram of a memory-based circuit board according to another exemplary embodiment of the present invention.
  • each group of signal lines includes a data signal with a preset bit capacity. And further comprising a control signal for controlling the data signal of the preset bit capacity for transmission.
  • the preset bit capacity in each group of signal lines refers to the capacity of the binary data information contained in each group of signals of the memory 2.
  • the preset bit capacity may be one of every 8 bits.
  • a byte is a basic unit, which is an integer multiple of a byte unit, for example, an 8-bit data signal is a group, or a 16-bit data signal is a group, or a 32-bit data signal is a group, and in addition, each group Control signals for performing control operations on preset bit capacity data information, such as data synchronization, clock synchronization, mask control, and the like, are also included.
  • control signal may at least include: a data synchronization signal control bit; and a data mask signal control bit.
  • the data synchronization signal control bit is used for clock synchronization control of receiving and transmitting data signals between the memory 2 and the processor 3.
  • Data mask signal control bits are used in The data signal is masked during the read or write operation.
  • each bit of the data signal of the preset bit capacity in the two connected signal lines may be connected to each other in an arbitrary order, and the control signal is a data synchronization signal control bit, and the data is masked.
  • the code signal control bit the data synchronization signal control bits in the two connected signal lines are correspondingly connected, and the data mask signal control bits in the two connected signal lines are correspondingly connected. That is, as shown in FIG. 2, assuming that the memory 2 is a memory of a 16-bit data signal, the signal line group 5 (A) and the signal line group 5 (B) are exchanged and connected according to the current layout of FIG.
  • the low eight-bit data signals DQ0 to DQ7 of the memory 2 can be connected with the high eight-bit data signals DQ8 to DQ15 of the processor 3.
  • each of the data signals inside the upper eight bits or the lower eight bits of the data signal can be connected in any order, and does not necessarily have to be connected in the order of high to low or low to high of the data signals. That is, as shown in FIG. 2, the DQ1 of the memory 2 does not have to be connected to the DQ9 of the processor 3, and it can be connected to the DQ 13, that is, the signal line pins 4 of the respective data signals in the signal line group 5 can be in any order.
  • the signal line pins 4 of the respective data signals in the connected signal line group 5 are connected.
  • the control signal such as the data synchronization signal control bit (DQS) and the data mask signal control bit (DQM) in FIG. 2
  • it must be connected correspondingly, that is, the lower eight bits of the data signal of the memory 2 (DQ0)
  • the data sync signal control bit (LDQS) to DQ7) is connected to the data sync signal control bit (UDQS) of the upper eight bit data signals (DQ8 to DQ15) of the controller 3, and the lower eight bits of the data signal of the memory 2 (DQ0)
  • the data mask signal control bit (LDQM) to DQ7) is connected to the data mask signal control bit (UDQM) of the upper eight bit data signals (DQ8 to DQ15) of the controller 3.
  • the memory-based circuit board of the embodiment further includes a data signal of a preset bit capacity included in each group of signal lines, and a control signal for transmitting a data signal for controlling the preset bit capacity, such as a data synchronization signal control bit.
  • the data mask signal control bits are properly wired.
  • the data bits of the preset bit capacity of the two sets of signal lines are connected to each other in an arbitrary order, and the data synchronization signals in the two sets of signal lines are controlled.
  • the bit corresponding connection connects the data mask signal control bits in the two sets of connected signal lines. Therefore, the wiring flexibility between the data signal lines in the group is improved, and the control signal is effective and accurate for controlling the data signals in each signal line group, thereby effectively avoiding the occurrence of each signal line. Crossing and reducing signal quality issues.
  • FIG. 3 is a schematic structural diagram of a memory-based circuit board according to another exemplary embodiment of the present invention.
  • the memory 2 in the foregoing embodiment may be a DDR chip, that is, a dual Double Data Rate Dynamic Random Access Memory ("DDR"). Double Rate of DDR Compared to the traditional single data rate, DDR technology implements two read/write operations in one clock cycle, that is, a read/write operation is performed on the rising and falling edges of the clock, respectively.
  • DDR Double Rate of DDR
  • DDR technology implements two read/write operations in one clock cycle, that is, a read/write operation is performed on the rising and falling edges of the clock, respectively.
  • the memory 2 can be any of the following chip types: a DDR chip with a 16-bit data signal, a DDR chip with a 32-bit data signal, and a 64-bit data signal. DDR chip.
  • the memory 2 can be any one of the following chip types: DDR1, DDR2, DDR3, DDR4. Different numbers represent DDR chips with different processes, different interfaces, and different performances (for example, different speeds).
  • DDR2: IDDR2/DDR II (Double Data Rate 2) SDRAM is a new generation memory technology standard developed by JEDEC (Joint Commission for Electronic Equipment Engineering). The biggest difference from the previous generation DDR memory technology standard is that although The basic method of simultaneous data transfer on the rising/falling edge of the clock is used, but DDR2 memory has twice the pre-read capability of the previous generation DDR memory (ie, 4-bit data read prefetch). In other words, DDR2 memory can read/write data at 4 times the speed of the external bus per clock and can run at 4 times the speed of the internal control bus.
  • the memory of different numbers of bits will have different layouts of the corresponding control signals.
  • the invention is not limited to the number of bits of the memory bus, including but not limited to 8-bit memory, 16-bit memory, 32-bit memory, 64-bit memory, 128-bit memory, 256-bit memory, 512. Bit memory, etc.
  • the data synchronization signal control bit can be synchronized with the data synchronization signal control bit LDQS for controlling the low eight-bit data signal as described in the above embodiment, and controlling the high eight-bit data signal for synchronous data synchronization.
  • the signal control bit UDQS whose data mask signal control bit can be masked by the data mask signal control bit LDQM for controlling the low eight bit data signal as described in the above embodiment, controls the high eight bit data signal
  • the data mask signal controls the bit UDQM.
  • its data synchronization signal control bit generally identifies one data synchronization signal control bit configured for each 8-bit data signal with DQS0, DQS1, DQS2, DQS3; its data mask signal
  • the control bits typically identify a data mask signal control bit for each 8-bit data signal with DQM0, DQM1, DQM2, DQM3.
  • the DQS0 bit of the memory can be connected to any of the DQS1, DQS2, DQS3 bits in the processor.
  • the DQS0 of the memory is connected to the DQS1 of the processor
  • the DQM0 of the memory is connected to the DQM1 of the processor
  • the DQS1 of the memory is The DQS0 of the processor
  • the DQM0 of the memory is connected to the DQM1 of the processor.
  • DQS data synchronization signal control bits
  • DDR2, DDR3, DDR4 contain DQS+ and DQS- data synchronization signal control bits, then corresponding
  • DQS DQS- data synchronization signal control bits
  • the LDQS of the memory is connected to the UDQS- of the processor
  • the LDQS+ of the memory is connected to the UDQS+.
  • the DDR with DDR chip 2 as a 16-bit data signal is taken as an example.
  • the DDR chip 2 and the processor 3 processing the DDR chip 2 are both Contains a high 8-bit signal line and a low 8-bit signal line; the upper 8-bit signal line of DDR chip 2 is connected to the lower 8-bit signal line of processor 3; the lower 8-bit signal line of DDR chip 2 is higher than processor 3. 8-bit signal line connection.
  • the low 8-bit signal line includes an 8-bit data signal of DQ0 to DQ7; the upper 8-bit signal line includes an 8-bit data signal of DQ8 to DQ15; and the data signal of the DQ0 to DQ7 of the DDR chip 2 is
  • the data signals of DQ8 to DQ15 of processor 3 can be connected in any order.
  • the data signals of DQ8 to DQ15 of the DDR chip 2 and the data signals of DQ0 to DQ7 of the processor 3 can be connected in an arbitrary order.
  • DQ0 of DDR chip 2 shown in FIG. 3 is connected to DQ11 of processor 3, DQ1 of DDR chip 2 is connected to DQ13 of processor 3; and DQ9 of DDR chip 2 is connected to DQ2 of processor 3, DQ10 of DDR chip 2 is connected.
  • the high 8-bit signal line includes a data synchronization signal control bit UDQS for controlling the DQ8 to DQ15; and a data mask signal control bit UDQM for controlling DQ8 to DQ15;
  • the lower 8-bit signal line includes control The data synchronization signal control bit LDQS of DQ0 to DQ7; further includes a data mask signal control bit LDQM for controlling DQ0 to DQ7; wherein the UDQS of the DDR chip 2 is connected to the LDQS of the processor 3, and the UDQM of the DDR chip 2 and the processor 3 LDQM connection; LDQS of DDR chip 2 is connected to UDQS of processor 3, LDQM of DDR chip 2 is connected with UDQM of processor 3.
  • the upper UDQS in DDR chip 2 must be connected to the lower LDQS of processor 3; the lower LDQS in DDR chip 2 It must be connected to the upper UDQS of the processor 3; similarly, the upper UDQM in the DDR chip 2 must be connected to the lower LDQM of the processor 3, and the lower LDQM in the DDR chip 2 must be connected to the upper UDQM of the processor 3.
  • the memory-based circuit board of this embodiment is defined by specifically routing a DDR chip of a 16-bit data signal, such as connecting a high 8-bit signal line of the DDR chip to a low 8-bit signal line of the processor, and a low 8-bit signal.
  • the line is connected to the upper 8-bit signal line of the processor; and the low 8-bit, high 8-bit data signals in the DDR chip and the processor can be connected in any order; UDQS, LDQS in the DDR chip and LDQS of the processor respectively UDQS and LDQM of the DDR chip are connected to the LDQM and UDQM of the processor respectively.
  • the flexibility of signal connection between the DDR chip and the processor is improved, the communication quality of the signal between the two is ensured, and the wiring between the DDR chip and each data signal line in each signal group of the processor is also improved.
  • the quality also ensures the control effectiveness and accuracy of the control signal for the data signals in each signal line group, thereby effectively avoiding the problem of crossover between the signal lines and reducing the signal quality.

Abstract

A memory-based circuit board (1) is provided. A memory (2) is disposed on the circuit board (1). A processor (3) configured to control the memory (2) is further disposed on the circuit board (1). The memory (2) and the processor (3) both comprise at least two sets of signal lines. A line set identifier of each set of the signal lines of the memory (2) corresponds to a line set identifier of each set of the signal lines of the processor (3). Signal lines of the memory (2) and the processor (3) have no cross connection on the same layer of the circuit board. Line set identifiers of the connected memory (2) and the processor (3) do not correspond to each other. Thus, by exchanging signals between the memory (2) and the processor (3) using signal line sets as units, the arrangement of the signal lines of the memory (2) and the processor (3) is facilitated, and it is ensured that the signal lines of the two do not cross each other, such that communication quality of signals is ensured.

Description

基于存储器的电路板Memory based board 技术领域Technical field
本发明涉及存储器布线技术,尤其涉及一种基于存储器的电路板。The present invention relates to memory wiring techniques, and more particularly to a memory based circuit board.
背景技术Background technique
随着电子技术的飞速发展,电子产品内的电路板,如印制电路板PCB(Printed Circuit Board)的体积变得越来越小。With the rapid development of electronic technology, the size of circuit boards in electronic products, such as printed circuit boards (PCBs), has become smaller and smaller.
作为电子器件的最小系统,PCB板上通常设置有存储器,例如,双倍速率同步动态随机存储器(Double Data Rate Dynamic Random Access Memory,简称“DDR”)以及控制该存储器工作的处理器。对于使用存储器的电路板,处理器和存储器之间的相应引脚分布通常很难做到无交叉一一对应连接,这就造成电路板走线时容易出现混乱的问题,混乱的走线易造成信号间的干扰,影响信号质量;若要避免处理器和存储器之间走线交叉,减少信号之间的干扰,就需要延长在电路板上的走线长度,走线加长占用了更多的电路板的面积,导致电路板的体积增加。As a minimum system of electronic devices, a memory is usually disposed on a PCB, for example, a Double Data Rate Dynamic Random Access Memory ("DDR") and a processor that controls the operation of the memory. For a circuit board that uses a memory, the corresponding pin distribution between the processor and the memory is often difficult to achieve a one-to-one correspondence without a crossover, which causes a chaotic problem when the board is routed, and a chaotic trace is likely to cause Interference between signals affects signal quality; if you want to avoid crossover between processor and memory and reduce interference between signals, you need to extend the length of the trace on the board. The longer the trace takes up more circuits. The area of the board leads to an increase in the size of the board.
发明内容Summary of the invention
本发明提供了一种基于存储器的电路板,用于解决现有技术中存在的电路板上存储器与处理器间电信号走线混乱及由其引发的信号干扰的技术问题。The present invention provides a memory-based circuit board for solving the technical problem of the chaos of the electrical signal between the memory on the circuit board and the processor and the signal interference caused by the prior art.
本发明提供一种基于存储器的电路板,所述电路板上设置有所述存储器,还设置有用于控制所述存储器的处理器;The present invention provides a memory-based circuit board on which the memory is disposed, and a processor for controlling the memory;
所述存储器和所述处理器均包含有至少两组信号线;The memory and the processor each include at least two sets of signal lines;
所述存储器上每组信号线的线组标识与所述处理器上每组信号线的线组标识相对应;a line group identifier of each group of signal lines on the memory corresponds to a line group identifier of each group of signal lines on the processor;
所述存储器的信号线与所述处理器的信号线,在同层电路板上无交叉连接;其中,相连接的所述存储器的线组标识与所述处理器的线组标识为 非对应的线组标识。The signal line of the memory and the signal line of the processor are not cross-connected on the same layer circuit board; wherein the line group identifier of the connected memory and the line group identifier of the processor are Non-corresponding line group ID.
可选的,每组信号线中包含有预设比特容量的数据信号,还包含有控制所述预设比特容量的数据信号进行传输的控制信号。Optionally, each group of signal lines includes a data signal with a preset bit capacity, and further includes a control signal for transmitting the data signal for controlling the preset bit capacity.
可选的,所述控制信号至少包括:数据同步信号控制位;数据掩码信号控制位。Optionally, the control signal includes at least: a data synchronization signal control bit; and a data mask signal control bit.
可选的,相连接的两组信号线中的所述预设比特容量的数据信号的各个比特位之间以任意顺序相互连接;Optionally, each bit of the data signal of the preset bit capacity in the two connected signal lines is connected to each other in an arbitrary order;
相连接的两组信号线中的所述数据同步信号控制位对应连接;The data synchronization signal control bits in the two connected signal lines are correspondingly connected;
相连接的两组信号线中的所述数据掩码信号控制位对应连接。The data mask signal control bits in the two connected signal lines are correspondingly connected.
可选的,所述存储器为DDR芯片;Optionally, the memory is a DDR chip;
所述DDR芯片为16位数据信号的DDR;The DDR chip is a DDR of a 16-bit data signal;
相应的,所述DDR芯片和所述处理器上均包含有高8位信号线和低8位信号线;Correspondingly, the DDR chip and the processor both include a high 8-bit signal line and a low 8-bit signal line;
所述DDR芯片的高8位信号线与所述处理器的低8位信号线连接;a high 8-bit signal line of the DDR chip is connected to a lower 8-bit signal line of the processor;
所述DDR芯片的低8位信号线与所述处理器的高8位信号线连接。The lower 8-bit signal line of the DDR chip is connected to the upper 8-bit signal line of the processor.
可选的,所述低8位信号线中包含有DQ0至DQ7的8位数据信号;Optionally, the low 8-bit signal line includes an 8-bit data signal of DQ0 to DQ7;
所述高8位信号线中包含有DQ8至DQ15的8位数据信号;The high 8-bit signal line includes an 8-bit data signal of DQ8 to DQ15;
所述DDR芯片的所述DQ0至DQ7的数据信号与所述处理器的所述DQ8至DQ15的数据信号可以以任意的顺序进行连接;The data signals of the DQ0 to DQ7 of the DDR chip and the data signals of the DQ8 to DQ15 of the processor may be connected in an arbitrary order;
所述DDR芯片的所述DQ8至DQ15的数据信号与所述处理器的所述DQ0至DQ7的数据信号可以以任意的顺序进行连接。The data signals of the DQ8 to DQ15 of the DDR chip and the data signals of the DQ0 to DQ7 of the processor may be connected in an arbitrary order.
可选的,所述高8位信号线中包含有控制所述DQ8至DQ15的数据同步信号控制位UDQS;还包含有控制所述DQ8至DQ15的数据掩码信号控制位UDQM;Optionally, the high 8-bit signal line includes a data synchronization signal control bit UDQS for controlling the DQ8 to DQ15; and a data mask signal control bit UDQM for controlling the DQ8 to DQ15;
所述低8位信号线中包含有控制所述DQ0至DQ7的数据同步信号控制位LDQS;还包含有控制所述DQ0至DQ7的数据掩码信号控制位LDQM;The lower 8-bit signal line includes a data synchronization signal control bit LDQS for controlling the DQ0 to DQ7; and a data mask signal control bit LDQM for controlling the DQ0 to DQ7;
所述DDR芯片的所述UDQS与所述处理器的所述LDQS连接,所述DDR芯片的所述UDQM与所述处理器的所述LDQM连接;所述DDR芯片的所述LDQS与所述处理器的所述UDQS连接,所述DDR芯片的所述 LDQM与所述处理器的所述UDQM连接。The UDQS of the DDR chip is connected to the LDQS of the processor, the UDQM of the DDR chip is connected to the LDQM of the processor; the LDQS of the DDR chip and the processing The UDQS connection of the device, the DDR chip The LDQM is coupled to the UDQM of the processor.
可选的,所述存储器为以下芯片类型中的任意一种:16位数据信号的DDR芯片、32位数据信号的DDR芯片、64位数据信号的DDR芯片。Optionally, the memory is any one of the following chip types: a DDR chip with a 16-bit data signal, a DDR chip with a 32-bit data signal, and a DDR chip with a 64-bit data signal.
可选的,所述存储器为以下芯片类型中的任意一种:DDR1、DDR2、DDR3、DDR4。Optionally, the memory is any one of the following chip types: DDR1, DDR2, DDR3, DDR4.
本发明所提供的基于存储器的电路板,在该电路板上设置有存储器,还设置有用于控制该存储器的处理器;存储器和处理器均包含有至少两组信号线;其中,存储器上每组信号线的线组标识与处理器上每组信号线的线组标识相对应;存储器的信号线与处理器的信号线,在同层电路板上无交叉连接;其中,相连接的存储器的线组标识与处理器的线组标识为非对应的线组标识。从而通过以信号线组为单位交换存储器和处理器之间的信号线,方便存储器和处理器间的信号线的走线,保证两者间的信号线没有交叉,进而保证信号间的通信质量。A memory-based circuit board provided by the present invention, a memory is disposed on the circuit board, and a processor for controlling the memory is further disposed; the memory and the processor each include at least two sets of signal lines; wherein each group on the memory The line group identifier of the signal line corresponds to the line group identifier of each group of signal lines on the processor; the signal line of the memory and the signal line of the processor are not cross-connected on the same layer circuit board; wherein, the line of the connected memory line The group ID and the line group ID of the processor are non-corresponding line group identifiers. Therefore, by exchanging the signal lines between the memory and the processor in units of signal lines, the routing of the signal lines between the memory and the processor is facilitated, and the signal lines between the two are not crossed, thereby ensuring the communication quality between the signals.
附图说明DRAWINGS
图1为本发明一示例性实施例示出的一种基于存储器的电路板的结构示意图;1 is a schematic structural diagram of a memory-based circuit board according to an exemplary embodiment of the present invention;
图2为本发明另一示例性实施例示出的一种基于存储器的电路板的结构示意图;FIG. 2 is a schematic structural diagram of a memory-based circuit board according to another exemplary embodiment of the present invention; FIG.
图3为本发明另一示例性实施例示出的一种基于存储器的电路板的结构示意图。FIG. 3 is a schematic structural diagram of a memory-based circuit board according to another exemplary embodiment of the present invention.
附图标记:Reference mark:
1、电路板;2、存储器/DDR芯片;3、处理器;4、信号线引脚;5、线组。1. Circuit board; 2. Memory/DDR chip; 3. Processor; 4. Signal line pin; 5. Line group.
具体实施方式detailed description
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例,对本发明实施例中的技术方案进行清楚、完整地描述。需要说明的是,在附图或说明书中,相似或相同的元件皆使用相同的附 图标记。The technical solutions in the embodiments of the present invention are clearly and completely described in the following with reference to the embodiments of the present invention. It should be noted that in the drawings or the description, similar or identical components use the same attached Figure mark.
图1为本发明一示例性实施例示出的一种基于存储器的电路板的结构示意图,如图1所示,本实施例提供的基于存储器的电路板1,电路板1上设置有存储器2,还设置有用于控制存储器2的处理器3;存储器2和处理器3均包含有至少两组信号线;存储器2上每组信号线的线组标识与处理器3上每组信号线的线组标识相对应;其中,信号线的引脚以标号4示意,信号线的线组以标号5示意,不同线组的标识以A、B、C、D......的大写字母进行区分。存储器2的信号线与处理器3的信号线,在同层电路板上无交叉连接;其中,相连接的存储器2的线组标识与处理器3的线组标识为非对应的线组标识。FIG. 1 is a schematic structural diagram of a memory-based circuit board according to an exemplary embodiment of the present invention. As shown in FIG. 1 , a memory-based circuit board 1 is provided in the embodiment, and a memory 2 is disposed on the circuit board 1 . A processor 3 for controlling the memory 2 is also provided; the memory 2 and the processor 3 each include at least two sets of signal lines; a line group identification of each group of signal lines on the memory 2 and a line group of each set of signal lines on the processor 3. Corresponding to the identification; wherein the pins of the signal line are indicated by the numeral 4, the line group of the signal line is indicated by the numeral 5, and the identification of the different line groups is distinguished by the capital letters of A, B, C, D, ... . The signal line of the memory 2 and the signal line of the processor 3 are not cross-connected on the same layer circuit board; wherein the line group identifier of the connected memory 2 and the line group identifier of the processor 3 are non-corresponding line group identifiers.
具体的,图1中的电路板1可以为印制电路板PCB(Printed Circuit Board)、柔性线路板FPC(Flexible Printed Circuit board)、单面板、双面板、多层线路板等,本实施例对此不作具体限定,本领域技术人员可以根据电路特性进行相应的电路板的选择。电路板1上至少设置有存储器2,以及控制该存储器2进行信息存储操作的处理器3。处理器3若要对诸如原始数据、程序、中间运行结果、最终运行结果等信息进行正确的存入或取出,则需要将存储器2芯片上的各个信号线引脚4与处理器3芯片上的各个信号线引脚4对应的连接,也就是如图1中所示的,存储器2的线组5(A)中的各个数据信号引脚4与处理器3的线组5(A)中的各个数据信号引脚4对应连接,从而保证处理器3可以将数据信息存入存储器2中的正确位置,以及可以准确地从存储器2中的确切位置取出数据信息。因此,如图1所示的,存储器2上每组信号线的线组标识与处理器3上每组信号线的线组标识相对应,例如,存储器2上的线组5(A)对应处理器3上的线组5(A),存储器2上的线组5(B)对应处理器3上的线组5(B),存储器2上的线组5(C)对应处理器3上的线组5(C),存储器2上的线组5(D)对应处理器3上的线组5(D)。图1中仅仅示出四组线组5,其并非对本实施例中电路板1中所包含的线组5的个数限定,本实施例中的存储器2和处理器3上均包含有两组或两组以上的信号线线组5。假设,线组5布局如图1所示,则若采用最短路径走线,则存储器2上的线组5(A)、5(B)、5(C)、5(D)与处理器3上的线组5(A)、5(B)、 5(C)、5(D)对应连接的时候,势必出现线路交叉的情况,从而造成信号间的干扰,信号质量下降。因此,可以在保证存储器2的信号线与处理器3的信号线在同层电路板1上无交叉连接的情况下,将存储器2的线组5与处理器3的线组5进行组与组间的信号交换,从而最大程度地方便电路板1的走线。如图1所示的布局,可以采用将存储器2的线组5(B)与处理器的线组5(C)连接,存储器2的线组5(C)与处理器的线组5(B)连接,存储器2的线组5(A)依然与处理器的线组5(A)连接,存储器2的线组5(D)依然与处理器的线组5(D)连接,保证了存储器2与处理器3之间的信号连线最短且相互之间没有交叉。Specifically, the circuit board 1 in FIG. 1 may be a printed circuit board (PCB), a flexible printed circuit board (FPC), a single-panel, a double-panel, a multi-layer circuit board, etc. This is not specifically limited, and those skilled in the art can select the corresponding circuit board according to the circuit characteristics. The circuit board 1 is provided with at least a memory 2, and a processor 3 that controls the memory 2 to perform an information storage operation. If the processor 3 needs to correctly deposit or retrieve information such as original data, program, intermediate operation result, final running result, etc., it is necessary to put each signal line pin 4 on the memory 2 chip and the processor 3 chip. Corresponding connection of each signal line pin 4, that is, as shown in FIG. 1, each data signal pin 4 in the line group 5 (A) of the memory 2 and the line group 5 (A) of the processor 3 The respective data signal pins 4 are correspondingly connected, thereby ensuring that the processor 3 can store the data information in the correct position in the memory 2, and can accurately extract the data information from the exact position in the memory 2. Therefore, as shown in FIG. 1, the line group identification of each group of signal lines on the memory 2 corresponds to the line group identification of each group of signal lines on the processor 3, for example, the line group 5 (A) on the memory 2 corresponds to processing. Line group 5 (A) on device 3, line group 5 (B) on memory 2 corresponds to line group 5 (B) on processor 3, line group 5 (C) on memory 2 corresponds to processor 3 Line group 5 (C), line group 5 (D) on memory 2 corresponds to line group 5 (D) on processor 3. Only four sets of line sets 5 are shown in FIG. 1, which are not limited to the number of line sets 5 included in the circuit board 1 in this embodiment. Both the memory 2 and the processor 3 in this embodiment include two sets. Or more than two sets of signal line groups 5. Assume that the layout of the line group 5 is as shown in FIG. 1, and if the shortest path is used, the line groups 5 (A), 5 (B), 5 (C), 5 (D) and the processor 3 on the memory 2 are used. Line group 5 (A), 5 (B), When 5(C) and 5(D) are connected, the line crossover will occur, causing interference between signals and degrading signal quality. Therefore, the line group 5 of the memory 2 and the line group 5 of the processor 3 can be grouped and grouped while ensuring that the signal line of the memory 2 and the signal line of the processor 3 are not cross-connected on the same layer circuit board 1. The signal exchange between them is to facilitate the routing of the board 1 to the utmost extent. As shown in the layout of FIG. 1, the line group 5 (B) of the memory 2 can be connected to the line group 5 (C) of the processor, the line group 5 (C) of the memory 2 and the line group 5 of the processor (B) ), the line group 5 (A) of the memory 2 is still connected to the line group 5 (A) of the processor, and the line group 5 (D) of the memory 2 is still connected to the line group 5 (D) of the processor, ensuring the memory The signal connections between the 2 and the processor 3 are the shortest and do not intersect each other.
本实施例的基于存储器的电路板,在该电路板上设置有存储器,还设置有用于控制该存储器的处理器;存储器和处理器均包含有至少两组信号线;其中,存储器上每组信号线的线组标识与处理器上每组信号线的线组标识相对应;存储器的信号线与处理器的信号线,在同层电路板上无交叉连接;其中,相连接的存储器的线组标识与处理器的线组标识为非对应的线组标识。从而通过以信号线组为单位交换存储器和处理器之间的信号线,方便存储器和处理器间的信号线的走线,保证两者间的信号线没有交叉,进而保证信号间的通信质量。The memory-based circuit board of this embodiment is provided with a memory on the circuit board, and a processor for controlling the memory; the memory and the processor each include at least two sets of signal lines; wherein each set of signals on the memory The line group identifier of the line corresponds to the line group identifier of each group of signal lines on the processor; the signal line of the memory and the signal line of the processor are not cross-connected on the same layer circuit board; wherein, the line group of the connected memory The line group identifier that identifies the processor and the processor is a non-corresponding line group identifier. Therefore, by exchanging the signal lines between the memory and the processor in units of signal lines, the routing of the signal lines between the memory and the processor is facilitated, and the signal lines between the two are not crossed, thereby ensuring the communication quality between the signals.
图2为本发明另一示例性实施例示出的一种基于存储器的电路板的结构示意图,在上一实施例的基础上,进一步地,每组信号线中包含有预设比特容量的数据信号,还包含有控制该预设比特容量的数据信号进行传输的控制信号。FIG. 2 is a schematic structural diagram of a memory-based circuit board according to another exemplary embodiment of the present invention. On the basis of the previous embodiment, further, each group of signal lines includes a data signal with a preset bit capacity. And further comprising a control signal for controlling the data signal of the preset bit capacity for transmission.
具体的,每组信号线中的预设比特容量指存储器2的每组信号中所容纳的二进制数据信息的容量,优选的,预设比特容量可以以每8个位(bit)所组成的一个字节(byte)为基本单位,其为字节单位的整数倍,例如,8位数据信号为一组,或16位数据信号为一组,或32位数据信号为一组,此外,各个组内还包括有对预设比特容量数据信息进行控制操作,例如,数据同步、时钟同步、掩码控制等的控制信号。Specifically, the preset bit capacity in each group of signal lines refers to the capacity of the binary data information contained in each group of signals of the memory 2. Preferably, the preset bit capacity may be one of every 8 bits. A byte is a basic unit, which is an integer multiple of a byte unit, for example, an 8-bit data signal is a group, or a 16-bit data signal is a group, or a 32-bit data signal is a group, and in addition, each group Control signals for performing control operations on preset bit capacity data information, such as data synchronization, clock synchronization, mask control, and the like, are also included.
可选的,该控制信号至少可以包括:数据同步信号控制位;数据掩码信号控制位。其中,数据同步信号控制位用于对存储器2和处理器3之间的数据信号进行接收、发送的时钟同步控制。数据掩码信号控制位用于在 数据信号进行读或写操作的过程中进行掩码控制。Optionally, the control signal may at least include: a data synchronization signal control bit; and a data mask signal control bit. The data synchronization signal control bit is used for clock synchronization control of receiving and transmitting data signals between the memory 2 and the processor 3. Data mask signal control bits are used in The data signal is masked during the read or write operation.
可选的,参考附图2,相连接的两组信号线中的预设比特容量的数据信号的各个比特位之间可以以任意顺序相互连接,基于控制信号为数据同步信号控制位,数据掩码信号控制位的情况,相连接的两组信号线中的数据同步信号控制位对应连接,相连接的两组信号线中的数据掩码信号控制位对应连接。也就是如图2所示的情况,假设存储器2为16位数据信号的存储器,则根据图2的当前布局,将信号线组5(A)和信号线组5(B)进行交换后连接可以保证在同层电路板1上的走线没有交叉,且节省走线长度,因此,可以将存储器2的低八位数据信号DQ0至DQ7与处理器3的高八位数据信号DQ8至DQ15进行连接,且高八位或低八位数据信号内部的各个数据信号可以以任意顺序进行连接,不必一定按照数据信号由高到低或由低到高的顺序进行连接。也就是如图2所示,存储器2的DQ1不一定非要与处理器3的DQ9连接,其可以与DQ13连接,即信号线组5内的各个数据信号的信号线引脚4可以以任意顺序与相连接的信号线组5内的各个数据信号的信号线引脚4进行连接。但是,对于控制信号,如图2中的数据同步信号控制位(DQS)、数据掩码信号控制位(DQM),则必须对应连接,也就是说,存储器2的低八位的数据信号(DQ0至DQ7)的数据同步信号控制位(LDQS)与控制器3的高八位的数据信号(DQ8至DQ15)的数据同步信号控制位(UDQS)连接,存储器2的低八位的数据信号(DQ0至DQ7)的数据掩码信号控制位(LDQM)与控制器3的高八位的数据信号(DQ8至DQ15)的数据掩码信号控制位(UDQM)连接。Optionally, referring to FIG. 2, each bit of the data signal of the preset bit capacity in the two connected signal lines may be connected to each other in an arbitrary order, and the control signal is a data synchronization signal control bit, and the data is masked. In the case of the code signal control bit, the data synchronization signal control bits in the two connected signal lines are correspondingly connected, and the data mask signal control bits in the two connected signal lines are correspondingly connected. That is, as shown in FIG. 2, assuming that the memory 2 is a memory of a 16-bit data signal, the signal line group 5 (A) and the signal line group 5 (B) are exchanged and connected according to the current layout of FIG. It is ensured that the traces on the same layer board 1 are not crossed, and the trace length is saved. Therefore, the low eight-bit data signals DQ0 to DQ7 of the memory 2 can be connected with the high eight-bit data signals DQ8 to DQ15 of the processor 3. And each of the data signals inside the upper eight bits or the lower eight bits of the data signal can be connected in any order, and does not necessarily have to be connected in the order of high to low or low to high of the data signals. That is, as shown in FIG. 2, the DQ1 of the memory 2 does not have to be connected to the DQ9 of the processor 3, and it can be connected to the DQ 13, that is, the signal line pins 4 of the respective data signals in the signal line group 5 can be in any order. The signal line pins 4 of the respective data signals in the connected signal line group 5 are connected. However, for the control signal, such as the data synchronization signal control bit (DQS) and the data mask signal control bit (DQM) in FIG. 2, it must be connected correspondingly, that is, the lower eight bits of the data signal of the memory 2 (DQ0) The data sync signal control bit (LDQS) to DQ7) is connected to the data sync signal control bit (UDQS) of the upper eight bit data signals (DQ8 to DQ15) of the controller 3, and the lower eight bits of the data signal of the memory 2 (DQ0) The data mask signal control bit (LDQM) to DQ7) is connected to the data mask signal control bit (UDQM) of the upper eight bit data signals (DQ8 to DQ15) of the controller 3.
本实施例的基于存储器的电路板,进一步对每组信号线中所包含的预设比特容量的数据信号,以及控制该预设比特容量的数据信号进行传输的控制信号,如数据同步信号控制位、数据掩码信号控制位等进行合理布线,如将两组信号线中的预设比特容量的数据信号的各个比特位之间以任意顺序相互连接,将两组信号线中的数据同步信号控制位对应连接,将相连接的两组信号线中的数据掩码信号控制位对应连接。从而即提高了组内各个数据信号线间的布线灵活性,同时还保证了控制信号对各个信号线组内的数据信号的控制有效性及准确性,进而有效地避免了各个信号线间发生 交叉而降低信号质量的问题。The memory-based circuit board of the embodiment further includes a data signal of a preset bit capacity included in each group of signal lines, and a control signal for transmitting a data signal for controlling the preset bit capacity, such as a data synchronization signal control bit. The data mask signal control bits are properly wired. For example, the data bits of the preset bit capacity of the two sets of signal lines are connected to each other in an arbitrary order, and the data synchronization signals in the two sets of signal lines are controlled. The bit corresponding connection connects the data mask signal control bits in the two sets of connected signal lines. Therefore, the wiring flexibility between the data signal lines in the group is improved, and the control signal is effective and accurate for controlling the data signals in each signal line group, thereby effectively avoiding the occurrence of each signal line. Crossing and reducing signal quality issues.
图3为本发明另一示例性实施例示出的一种基于存储器的电路板的结构示意图,在上述实施例的基础上,进一步地,前述实施例中的存储器2可以为DDR芯片,即,双倍速率同步动态随机存储器(Double Data Rate Dynamic Random Access Memory,简称“DDR”)。DDR的双倍速率与传统的单数据速率相比,DDR技术实现了一个时钟周期内进行两次读/写操作,即在时钟的上升沿和下降沿分别执行一次读/写操作。FIG. 3 is a schematic structural diagram of a memory-based circuit board according to another exemplary embodiment of the present invention. On the basis of the foregoing embodiments, the memory 2 in the foregoing embodiment may be a DDR chip, that is, a dual Double Data Rate Dynamic Random Access Memory ("DDR"). Double Rate of DDR Compared to the traditional single data rate, DDR technology implements two read/write operations in one clock cycle, that is, a read/write operation is performed on the rising and falling edges of the clock, respectively.
适用于本发明的DDR芯片的种类很多,可选的,该存储器2可以为以下芯片类型中的任意一种:16位数据信号的DDR芯片、32位数据信号的DDR芯片、64位数据信号的DDR芯片。There are many types of DDR chips suitable for use in the present invention. Alternatively, the memory 2 can be any of the following chip types: a DDR chip with a 16-bit data signal, a DDR chip with a 32-bit data signal, and a 64-bit data signal. DDR chip.
可选的,该存储器2可以为以下芯片类型中的任意一种:DDR1、DDR2、DDR3、DDR4。不同的编号代表了不同工艺,不同接口,不同性能(例如,速率不同)的DDR芯片。例如,DDR2:IDDR2/DDR II(Double Data Rate 2)SDRAM是由JEDEC(电子设备工程联合委员会)进行开发的新生代内存技术标准,它与上一代DDR内存技术标准最大的不同就是,虽然同是采用了在时钟的上升/下降沿同时进行数据传输的基本方式,但DDR2内存却拥有两倍于上一代DDR内存预读取能力(即:4bit数据读预取)。换句话说,DDR2内存每个时钟能够以4倍外部总线的速度读/写数据,并且能够以内部控制总线4倍的速度运行。Optionally, the memory 2 can be any one of the following chip types: DDR1, DDR2, DDR3, DDR4. Different numbers represent DDR chips with different processes, different interfaces, and different performances (for example, different speeds). For example, DDR2: IDDR2/DDR II (Double Data Rate 2) SDRAM is a new generation memory technology standard developed by JEDEC (Joint Commission for Electronic Equipment Engineering). The biggest difference from the previous generation DDR memory technology standard is that although The basic method of simultaneous data transfer on the rising/falling edge of the clock is used, but DDR2 memory has twice the pre-read capability of the previous generation DDR memory (ie, 4-bit data read prefetch). In other words, DDR2 memory can read/write data at 4 times the speed of the external bus per clock and can run at 4 times the speed of the internal control bus.
需要注意的是,不同位数的存储器,其所对应的控制信号的布局也会不同。本发明并不局限于存储器总线的位数,适用的存储器包括但不限于8位的存储器、16位的存储器、32位的存储器、64位的存储器、128位的存储器、256位的存储器、512位的存储器等。例如,针对16位的存储器,其数据同步信号控制位可以如上述实施例中所述的控制低八位数据信号进行同步的数据同步信号控制位LDQS、控制高八位数据信号进行同步的数据同步信号控制位UDQS,其数据掩码信号控制位可以如上述实施例中所述的控制低八位数据信号进行掩码操作的数据掩码信号控制位LDQM、控制高八位数据信号进行掩码操作的数据掩码信号控制位UDQM。针对32位的存储器,其数据同步信号控制位一般以DQS0、DQS1、DQS2、DQS3标识每8位数据信号所配置的一个数据同步信号控制位;其数据掩码信号 控制位一般以DQM0、DQM1、DQM2、DQM3标识每8位数据信号所配置的一个数据掩码信号控制位。存储器的DQS0位可以与处理器中的DQS1、DQS2、DQS3任一位进行连接,例如,存储器的DQS0与处理器的DQS1连接,存储器的DQM0与处理器的DQM1连接,相应的,存储器的DQS1与处理器的DQS0连接,存储器的DQM0与处理器的DQM1连接。此外,对于某些DDR芯片来说,存在数据同步信号控制位(DQS)以差分对的形式呈现,例如,DDR2、DDR3、DDR4中包含有DQS+和DQS-的数据同步信号控制位,则相应的,在信号线组进行交换的过程中,注意需要将DQS进行极性对应的连接。例如,对含DQS差分对的DDR来说,将存储器的LDQS-对应处理器的UDQS-连接,相应的,存储器的LDQS+对应UDQS+连接。针对不同类型的DDR芯片2,以下以DDR芯片2为16位数据信号的DDR为例进行说明,对于16位DDR芯片2来说,该DDR芯片2和处理该DDR芯片2的处理器3上均包含有高8位信号线和低8位信号线;DDR芯片2的高8位信号线与处理器3的低8位信号线连接;DDR芯片2的低8位信号线与处理器3的高8位信号线连接。It should be noted that the memory of different numbers of bits will have different layouts of the corresponding control signals. The invention is not limited to the number of bits of the memory bus, including but not limited to 8-bit memory, 16-bit memory, 32-bit memory, 64-bit memory, 128-bit memory, 256-bit memory, 512. Bit memory, etc. For example, for a 16-bit memory, the data synchronization signal control bit can be synchronized with the data synchronization signal control bit LDQS for controlling the low eight-bit data signal as described in the above embodiment, and controlling the high eight-bit data signal for synchronous data synchronization. The signal control bit UDQS, whose data mask signal control bit can be masked by the data mask signal control bit LDQM for controlling the low eight bit data signal as described in the above embodiment, controls the high eight bit data signal The data mask signal controls the bit UDQM. For a 32-bit memory, its data synchronization signal control bit generally identifies one data synchronization signal control bit configured for each 8-bit data signal with DQS0, DQS1, DQS2, DQS3; its data mask signal The control bits typically identify a data mask signal control bit for each 8-bit data signal with DQM0, DQM1, DQM2, DQM3. The DQS0 bit of the memory can be connected to any of the DQS1, DQS2, DQS3 bits in the processor. For example, the DQS0 of the memory is connected to the DQS1 of the processor, the DQM0 of the memory is connected to the DQM1 of the processor, and correspondingly, the DQS1 of the memory is The DQS0 of the processor is connected, and the DQM0 of the memory is connected to the DQM1 of the processor. In addition, for some DDR chips, there are data synchronization signal control bits (DQS) in the form of differential pairs. For example, DDR2, DDR3, DDR4 contain DQS+ and DQS- data synchronization signal control bits, then corresponding In the process of exchanging signal line groups, pay attention to the need to connect the DQS to the polarity. For example, for a DDR with a DQS differential pair, the LDQS of the memory is connected to the UDQS- of the processor, and correspondingly, the LDQS+ of the memory is connected to the UDQS+. For different types of DDR chips 2, the DDR with DDR chip 2 as a 16-bit data signal is taken as an example. For the 16-bit DDR chip 2, the DDR chip 2 and the processor 3 processing the DDR chip 2 are both Contains a high 8-bit signal line and a low 8-bit signal line; the upper 8-bit signal line of DDR chip 2 is connected to the lower 8-bit signal line of processor 3; the lower 8-bit signal line of DDR chip 2 is higher than processor 3. 8-bit signal line connection.
可选的,低8位信号线中包含有DQ0至DQ7的8位数据信号;高8位信号线中包含有DQ8至DQ15的8位数据信号;DDR芯片2的该DQ0至DQ7的数据信号与处理器3的DQ8至DQ15的数据信号可以以任意的顺序进行连接。DDR芯片2的DQ8至DQ15的数据信号与处理器3的DQ0至DQ7的数据信号可以以任意的顺序进行连接。如图3所示的DDR芯片2的DQ0连接处理器3的DQ11、DDR芯片2的DQ1连接处理器3的DQ13;再如DDR芯片2的DQ9连接处理器3的DQ2、DDR芯片2的DQ10连接处理器3的DQ7。Optionally, the low 8-bit signal line includes an 8-bit data signal of DQ0 to DQ7; the upper 8-bit signal line includes an 8-bit data signal of DQ8 to DQ15; and the data signal of the DQ0 to DQ7 of the DDR chip 2 is The data signals of DQ8 to DQ15 of processor 3 can be connected in any order. The data signals of DQ8 to DQ15 of the DDR chip 2 and the data signals of DQ0 to DQ7 of the processor 3 can be connected in an arbitrary order. DQ0 of DDR chip 2 shown in FIG. 3 is connected to DQ11 of processor 3, DQ1 of DDR chip 2 is connected to DQ13 of processor 3; and DQ9 of DDR chip 2 is connected to DQ2 of processor 3, DQ10 of DDR chip 2 is connected. DQ7 of processor 3.
可选的,高8位信号线中包含有控制该DQ8至DQ15的数据同步信号控制位UDQS;还包含有控制DQ8至DQ15的数据掩码信号控制位UDQM;低8位信号线中包含有控制DQ0至DQ7的数据同步信号控制位LDQS;还包含有控制DQ0至DQ7的数据掩码信号控制位LDQM;其中,DDR芯片2的UDQS与处理器3的LDQS连接,DDR芯片2的UDQM与处理器3的LDQM连接;DDR芯片2的LDQS与处理器3的UDQS连接,DDR芯片2的LDQM与处理器3的UDQM连接。也就是说,当DDR 芯片2中的高8位信号线与低8位信号线进行信号线线组5的交换后,DDR芯片2中的高位UDQS必须与处理器3的低位LDQS对应连接;DDR芯片2中的低位LDQS必须与处理器3的高位UDQS对应连接;同理,DDR芯片2中的高位UDQM必须与处理器3的低位LDQM对应连接,DDR芯片2中的低位LDQM必须与处理器3的高位UDQM对应连接。Optionally, the high 8-bit signal line includes a data synchronization signal control bit UDQS for controlling the DQ8 to DQ15; and a data mask signal control bit UDQM for controlling DQ8 to DQ15; the lower 8-bit signal line includes control The data synchronization signal control bit LDQS of DQ0 to DQ7; further includes a data mask signal control bit LDQM for controlling DQ0 to DQ7; wherein the UDQS of the DDR chip 2 is connected to the LDQS of the processor 3, and the UDQM of the DDR chip 2 and the processor 3 LDQM connection; LDQS of DDR chip 2 is connected to UDQS of processor 3, LDQM of DDR chip 2 is connected with UDQM of processor 3. That is, when DDR After the high 8-bit signal line in chip 2 and the lower 8-bit signal line are exchanged for signal line group 5, the upper UDQS in DDR chip 2 must be connected to the lower LDQS of processor 3; the lower LDQS in DDR chip 2 It must be connected to the upper UDQS of the processor 3; similarly, the upper UDQM in the DDR chip 2 must be connected to the lower LDQM of the processor 3, and the lower LDQM in the DDR chip 2 must be connected to the upper UDQM of the processor 3.
本实施例的基于存储器的电路板,通过特定地对16位数据信号的DDR芯片进行布线限定,如将DDR芯片的高8位信号线与处理器的低8位信号线连接,低8位信号线与处理器的高8位信号线连接;且DDR芯片和处理器内的低8位、高8位数据信号可以以任意的顺序进行连接;DDR芯片中的UDQS、LDQS分别与处理器的LDQS、UDQS对应连接,DDR芯片的UDQM、LDQM分别与处理器的LDQM、UDQM对应连接。从而提高了DDR芯片与处理器之间信号连线的灵活性,保证了两者间信号的通信质量;同时,还提高了DDR芯片以及处理器各个信号组内的各个数据信号线间的布线灵活性,同时还保证了控制信号对各个信号线组内的数据信号的控制有效性及准确性,进而有效地避免了各个信号线间发生交叉而降低信号质量的问题。The memory-based circuit board of this embodiment is defined by specifically routing a DDR chip of a 16-bit data signal, such as connecting a high 8-bit signal line of the DDR chip to a low 8-bit signal line of the processor, and a low 8-bit signal. The line is connected to the upper 8-bit signal line of the processor; and the low 8-bit, high 8-bit data signals in the DDR chip and the processor can be connected in any order; UDQS, LDQS in the DDR chip and LDQS of the processor respectively UDQS and LDQM of the DDR chip are connected to the LDQM and UDQM of the processor respectively. Thereby, the flexibility of signal connection between the DDR chip and the processor is improved, the communication quality of the signal between the two is ensured, and the wiring between the DDR chip and each data signal line in each signal group of the processor is also improved. The quality also ensures the control effectiveness and accuracy of the control signal for the data signals in each signal line group, thereby effectively avoiding the problem of crossover between the signal lines and reducing the signal quality.
最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案范围。 It should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, and are not intended to be limiting; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art will understand that The technical solutions described in the foregoing embodiments may be modified, or some or all of the technical features may be equivalently substituted; and the modifications or substitutions do not deviate from the technical solutions of the embodiments of the present invention.

Claims (9)

  1. 一种基于存储器的电路板,其特征在于,A memory based circuit board characterized in that
    所述电路板上设置有所述存储器,还设置有用于控制所述存储器的处理器;The memory board is provided with the memory, and a processor for controlling the memory is further provided;
    所述存储器和所述处理器均包含有至少两组信号线;The memory and the processor each include at least two sets of signal lines;
    所述存储器上每组信号线的线组标识与所述处理器上每组信号线的线组标识相对应;a line group identifier of each group of signal lines on the memory corresponds to a line group identifier of each group of signal lines on the processor;
    所述存储器的信号线与所述处理器的信号线,在同层电路板上无交叉连接;其中,相连接的所述存储器的线组标识与所述处理器的线组标识为非对应的线组标识。The signal line of the memory and the signal line of the processor are not cross-connected on the same layer circuit board; wherein the line group identifier of the connected memory is non-corresponding to the line group identifier of the processor Line group ID.
  2. 根据权利要求1所述的基于存储器的电路板,其特征在于,A memory-based circuit board according to claim 1, wherein
    每组信号线中包含有预设比特容量的数据信号,还包含有控制所述预设比特容量的数据信号进行传输的控制信号。Each set of signal lines includes a data signal of a preset bit capacity, and further includes a control signal for transmitting the data signal for controlling the preset bit capacity.
  3. 根据权利要求2所述的基于存储器的电路板,其特征在于,A memory-based circuit board according to claim 2, wherein
    所述控制信号至少包括:数据同步信号控制位;数据掩码信号控制位。The control signal includes at least: a data synchronization signal control bit; a data mask signal control bit.
  4. 根据权利要求3所述的基于存储器的电路板,其特征在于,A memory-based circuit board according to claim 3, wherein
    相连接的两组信号线中的所述预设比特容量的数据信号的各个比特位之间以任意顺序相互连接;Connecting respective bits of the data signal of the preset bit capacity in the two connected signal lines to each other in an arbitrary order;
    相连接的两组信号线中的所述数据同步信号控制位对应连接;The data synchronization signal control bits in the two connected signal lines are correspondingly connected;
    相连接的两组信号线中的所述数据掩码信号控制位对应连接。The data mask signal control bits in the two connected signal lines are correspondingly connected.
  5. 根据权利要求1~4中任一项所述的基于存储器的电路板,其特征在于,A memory-based circuit board according to any one of claims 1 to 4, characterized in that
    所述存储器为DDR芯片;The memory is a DDR chip;
    所述DDR芯片为16位数据信号的DDR;The DDR chip is a DDR of a 16-bit data signal;
    相应的,所述DDR芯片和所述处理器上均包含有高8位信号线和低8位信号线; Correspondingly, the DDR chip and the processor both include a high 8-bit signal line and a low 8-bit signal line;
    所述DDR芯片的高8位信号线与所述处理器的低8位信号线连接;a high 8-bit signal line of the DDR chip is connected to a lower 8-bit signal line of the processor;
    所述DDR芯片的低8位信号线与所述处理器的高8位信号线连接。The lower 8-bit signal line of the DDR chip is connected to the upper 8-bit signal line of the processor.
  6. 根据权利要求5所述的基于存储器的电路板,其特征在于,A memory-based circuit board according to claim 5, wherein
    所述低8位信号线中包含有DQ0至DQ7的8位数据信号;The low 8-bit signal line includes an 8-bit data signal of DQ0 to DQ7;
    所述高8位信号线中包含有DQ8至DQ15的8位数据信号;The high 8-bit signal line includes an 8-bit data signal of DQ8 to DQ15;
    所述DDR芯片的所述DQ0至DQ7的数据信号与所述处理器的所述DQ8至DQ15的数据信号可以以任意的顺序进行连接;The data signals of the DQ0 to DQ7 of the DDR chip and the data signals of the DQ8 to DQ15 of the processor may be connected in an arbitrary order;
    所述DDR芯片的所述DQ8至DQ15的数据信号与所述处理器的所述DQ0至DQ7的数据信号可以以任意的顺序进行连接。The data signals of the DQ8 to DQ15 of the DDR chip and the data signals of the DQ0 to DQ7 of the processor may be connected in an arbitrary order.
  7. 根据权利要求6所述的基于存储器的电路板,其特征在于,A memory based circuit board according to claim 6 wherein:
    所述高8位信号线中包含有控制所述DQ8至DQ15的数据同步信号控制位UDQS;还包含有控制所述DQ8至DQ15的数据掩码信号控制位UDQM;The high 8-bit signal line includes a data synchronization signal control bit UDQS for controlling the DQ8 to DQ15; and a data mask signal control bit UDQM for controlling the DQ8 to DQ15;
    所述低8位信号线中包含有控制所述DQ0至DQ7的数据同步信号控制位LDQS;还包含有控制所述DQ0至DQ7的数据掩码信号控制位LDQM;The lower 8-bit signal line includes a data synchronization signal control bit LDQS for controlling the DQ0 to DQ7; and a data mask signal control bit LDQM for controlling the DQ0 to DQ7;
    所述DDR芯片的所述UDQS与所述处理器的所述LDQS连接,所述DDR芯片的所述UDQM与所述处理器的所述LDQM连接;所述DDR芯片的所述LDQS与所述处理器的所述UDQS连接,所述DDR芯片的所述LDQM与所述处理器的所述UDQM连接。The UDQS of the DDR chip is connected to the LDQS of the processor, the UDQM of the DDR chip is connected to the LDQM of the processor; the LDQS of the DDR chip and the processing The UDQS connection of the DDR chip, the LDQM of the DDR chip is connected to the UDQM of the processor.
  8. 根据权利要求1~4中任一项所述的基于存储器的电路板,其特征在于,A memory-based circuit board according to any one of claims 1 to 4, characterized in that
    所述存储器为以下芯片类型中的任意一种:16位数据信号的DDR芯片、32位数据信号的DDR芯片、64位数据信号的DDR芯片。The memory is any one of the following chip types: a DDR chip of a 16-bit data signal, a DDR chip of a 32-bit data signal, and a DDR chip of a 64-bit data signal.
  9. 根据权利要求1~4中任一项所述的基于存储器的电路板,其特征在于, A memory-based circuit board according to any one of claims 1 to 4, characterized in that
    所述存储器为以下芯片类型中的任意一种:DDR1、DDR2、DDR3、DDR4。 The memory is any one of the following chip types: DDR1, DDR2, DDR3, DDR4.
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