WO2018157744A1 - 反射式显示面板及其制造方法、显示装置 - Google Patents

反射式显示面板及其制造方法、显示装置 Download PDF

Info

Publication number
WO2018157744A1
WO2018157744A1 PCT/CN2018/076719 CN2018076719W WO2018157744A1 WO 2018157744 A1 WO2018157744 A1 WO 2018157744A1 CN 2018076719 W CN2018076719 W CN 2018076719W WO 2018157744 A1 WO2018157744 A1 WO 2018157744A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
display panel
thin film
reflective
layer
Prior art date
Application number
PCT/CN2018/076719
Other languages
English (en)
French (fr)
Inventor
刘明悬
郭会斌
张小祥
Original Assignee
京东方科技集团股份有限公司
北京京东方显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 北京京东方显示技术有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/077,102 priority Critical patent/US20210181575A1/en
Publication of WO2018157744A1 publication Critical patent/WO2018157744A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G02F1/133531—Polarisers characterised by the arrangement of polariser or analyser axes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133618—Illuminating devices for ambient light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/13363—Birefringent elements, e.g. for optical compensation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/13363—Birefringent elements, e.g. for optical compensation
    • G02F1/133638—Waveplates, i.e. plates with a retardation value of lambda/n

Definitions

  • the present application relates to the field of display technologies, and in particular, to a reflective display panel, a method of manufacturing the same, and a display device.
  • the reflective display panel may include a first substrate and a second substrate which are disposed opposite to each other, and a liquid crystal disposed between the first substrate and the second substrate.
  • a thin film transistor and a lead are disposed on a side of the second substrate adjacent to the first substrate, and a reflective layer is disposed on a side of the thin film transistor adjacent to the first substrate.
  • the thin film transistor is disposed on the display region on the second substrate, the lead is disposed on the bonding region of the second substrate, and the orthographic projection of the first substrate on the second substrate The area coincides with the display area.
  • Ambient light can pass from the first substrate substrate away from the second substrate substrate, through the first substrate substrate and the liquid crystal to the reflective layer on the second substrate substrate, and then reflected by the reflective layer and pass through again The liquid crystal and the first substrate substrate finally emit the first substrate, so that the reflective display panel displays an image.
  • the display side of the reflective display panel is the side of the first substrate from the second substrate, and the orthographic projection area of the first substrate on the second substrate is not bonded to the bonded region.
  • the overlapping makes it impossible for the first substrate to completely cover the second substrate.
  • the present application provides a reflective display panel, a method of manufacturing the same, and a display device.
  • the technical solution is as follows:
  • a reflective display panel comprising: a first substrate and a second substrate disposed opposite to each other,
  • a reflective layer is disposed on a side of the first substrate adjacent to the second substrate, and a thin film transistor and a lead are disposed on a side of the second substrate adjacent to the first substrate.
  • the reflective display panel further includes: a liquid crystal disposed between the first substrate and the second substrate;
  • a side of the second substrate substrate away from the first substrate is provided with a quarter slide
  • the side of the quarter slide away from the first substrate is provided with a polarizer
  • the angle between the transmission axis of the polarizer and the optical axis of the quarter-slide is 45 degrees, and the optical axis of the quarter-slide is parallel to the long axis of the liquid crystal.
  • the thin film transistor includes a plurality of functional film layers.
  • the reflectivity of the functional film layer adjacent to the second substrate substrate in the plurality of functional film layers is lower than the reflectivity of the other functional film layers, wherein the other functional film layers are: Any functional film layer other than the functional film layer of the second substrate.
  • a reflectivity of the functional film layer adjacent to the second substrate in the plurality of functional film layers is less than ten percent.
  • the thin film transistor includes a plurality of functional film layers, and a side of the second substrate substrate adjacent to the first substrate substrate is provided with a predetermined film layer; the predetermined film layer is adjacent to the first a thin film transistor and the lead are disposed on one side of a substrate; wherein an orthographic projection area of the thin film transistor on the second substrate and the predetermined film layer are in the second liner The orthographic regions on the base substrate overlap, and the reflectivity of the predetermined film layer is lower than the reflectance of any of the plurality of functional film layers.
  • the predetermined film layer has a reflectance of less than ten percent.
  • a side of the reflective layer adjacent to the second substrate is provided with a color film layer, and the liquid crystal is located between the color film layer and the thin film transistor.
  • the second substrate substrate has a display area and a binding area.
  • the thin film transistor is located in the display area, and the lead is located in the binding area;
  • An orthographic projection area of the first substrate on the second substrate is the display area, and the reflective layer covers the first substrate.
  • a method of fabricating a reflective display panel comprising:
  • the first substrate and the second substrate are disposed opposite to each other such that the reflective layer is disposed adjacent to the second substrate, and the thin film transistor and the lead are adjacent to the first substrate Settings.
  • the method further includes:
  • the angle between the transmission axis of the polarizer and the optical axis of the quarter-slide is 45 degrees, and the optical axis of the quarter-slide is parallel to the long axis of the liquid crystal.
  • the thin film transistor includes a plurality of functional film layers.
  • the reflectivity of the functional film layer adjacent to the second substrate substrate in the plurality of functional film layers is lower than the reflectivity of the other functional film layers, wherein the other functional film layers are: Any functional film layer other than the functional film layer of the second substrate.
  • a reflectivity of the functional film layer adjacent to the second substrate in the plurality of functional film layers is less than ten percent.
  • the thin film transistor includes a plurality of functional film layers.
  • Forming a thin film transistor and a lead on one side of the second substrate comprising: forming a predetermined film layer on one side of the second substrate; and forming a second substrate on the predetermined film layer Forming the thin film transistor and the lead on a substrate; wherein an orthographic projection of the thin film transistor on the second substrate and an orthographic projection of the predetermined film on the second substrate The regions overlap, and the reflectance of the predetermined film layer is lower than the reflectance of any of the functional film layers of the thin film transistor.
  • the predetermined film layer has a reflectance of less than ten percent.
  • the method further includes:
  • liquid crystal is located between the color film layer and the thin film transistor.
  • the reflective layer covers the first substrate, the second substrate has a display area and a binding area, and the first substrate and the second substrate are After being disposed, the front projection area of the first substrate on the second substrate is the display area, and the thin film transistor and the lead are formed on one side of the second substrate, including:
  • the lead is formed on the bonding region on one side of the second substrate.
  • a display device comprising the reflective display panel of the first aspect.
  • the display device further includes: a casing and a printed circuit board,
  • the printed circuit board is connected to the thin film transistor through a lead, and the printed circuit board is disposed on a side of the first substrate substrate away from the second substrate;
  • An edge of the outer casing is in contact with a side surface of the second base substrate, a structure between the second substrate substrate and the printed circuit board, and the printed circuit board are located at the outer casing and the Between the second substrate substrates.
  • the display device further includes: a casing and a printed circuit board,
  • the printed circuit board is connected to the thin film transistor through a lead, and the printed circuit board is disposed on a side of the first substrate substrate away from the second substrate;
  • An edge of the outer casing is in contact with a surface of the second substrate adjacent to the first substrate, a structure between the second substrate and the printed circuit board, and the printed circuit
  • the plates are each located between the outer casing and the second substrate.
  • the display device further includes: a light source,
  • the light source is disposed on a side of the second substrate that is away from the first substrate, and is configured to emit light to the reflective display panel.
  • FIG. 1 is a schematic structural diagram of a reflective display panel according to an embodiment of the present invention.
  • FIG. 2A is a schematic structural diagram of another reflective display panel according to an embodiment of the present invention.
  • FIG. 2B is a schematic structural diagram of still another reflective display panel according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of an open state of a pixel area according to an embodiment of the present disclosure
  • FIG. 4 is a schematic diagram of an operation state of a pixel area according to an embodiment of the present invention.
  • FIG. 5A is a schematic diagram of an off state of a pixel region according to an embodiment of the present invention.
  • FIG. 5B is a partial schematic structural diagram of a reflective display panel according to an embodiment of the present invention.
  • FIG. 5C is a partial schematic structural diagram of another reflective display panel according to an embodiment of the present invention.
  • FIG. 6 is a flowchart of a method for manufacturing a reflective display panel according to an embodiment of the present invention.
  • FIG. 7 is a flowchart of a method for fabricating another reflective display panel according to an embodiment of the present invention.
  • FIG. 8A is a schematic diagram showing a first partial structure of a reflective display panel according to an embodiment of the present invention.
  • FIG. 8B is a second partial structural diagram of a reflective display panel according to an embodiment of the present invention.
  • 8C is a schematic diagram showing a third partial structure of a reflective display panel according to an embodiment of the present invention.
  • 8D is a schematic view showing a fourth partial structure of a reflective display panel according to an embodiment of the present invention.
  • 8E is a schematic diagram showing a fifth partial structure of a reflective display panel according to an embodiment of the present invention.
  • FIG. 8F is a sixth partial structural diagram of a reflective display panel according to an embodiment of the present invention.
  • 8G is a schematic diagram showing a seventh partial structure of a reflective display panel according to an embodiment of the present invention.
  • FIG. 9 is a schematic structural diagram of a reflective display device provided by the related art.
  • FIG. 10 is a schematic structural diagram of a reflective display device according to an embodiment of the present invention.
  • FIG. 11 is a schematic structural diagram of a reflective display device according to an embodiment of the present invention.
  • FIG. 1 is a schematic structural diagram of a reflective display panel according to an embodiment of the present invention. As shown in FIG. 1 , the reflective display panel 1 includes a first substrate 11 and a second substrate 12 disposed opposite to each other.
  • a reflective layer 13 is disposed on a side of the first base substrate 11 adjacent to the second base substrate 12, and a thin film transistor 14 and leads 15 are disposed on a side of the second base substrate 12 adjacent to the first base substrate 11.
  • the reflective layer is disposed on the first substrate, and the thin film transistor and the lead are disposed on the second substrate. Therefore, the reflective display panel
  • the display side is: a side of the second substrate that is away from the first substrate. Since the second base substrate has a large area, the second base substrate can completely cover the first base substrate, and when the reflective display panel is packaged, there is no need to cover the frame on the display side of the reflective display panel, thereby reducing The waste of the outer casing material is realized, and the display side of the reflective display panel can be realized without a frame.
  • the second base substrate 12 may have a display area A and a binding area B
  • the thin film transistor 14 may be located in the display area A
  • the lead 15 may be located in the binding area B.
  • the orthographic projection area of the first base substrate 11 on the second base substrate 12 may be the display area A
  • the reflective layer 13 may cover the first base substrate 11.
  • a plurality of thin film transistors may be disposed on the second substrate, and the plurality of thin film transistors are in one-to-one correspondence with the plurality of pixel regions on the second substrate, and each of the thin film transistors is located in the thin film transistor. Within the pixel area.
  • FIG. 2A is a schematic structural diagram of another reflective display panel according to an embodiment of the present invention.
  • the reflective display panel 1 may further include: a quarter.
  • a side of the second substrate 12 away from the first substrate 11 is provided with a quarter slide 17; a side of the quarter slide 17 away from the first substrate 11 is provided with a polarizer 18 .
  • the angle between the transmission axis of the polarizer 18 and the optical axis of the quarter slide 17 is 45 degrees (that is, the longitudinal direction of the transmission axis of the polarizer 18 and the long axis direction of the quarter slide 17 The angle is 45 degrees), and the optical axis of the quarter slide 17 is parallel to the long axis of the liquid crystal 16 (that is, the long axis direction of the quarter slide 17 is parallel to the long axis direction of the liquid crystal 16).
  • FIG. 3 is a schematic diagram of polarization state of light when a pixel region is in an open state according to an embodiment of the present invention.
  • a certain pixel region needs to be controlled to emit light (that is, an open state, ambient light can enter the pixel.
  • a voltage may not be applied to the liquid crystal corresponding to the pixel area, so that the liquid crystal corresponding to the pixel area is not deflected.
  • both the quarter slide and the liquid crystal (not shown in Fig. 3) can function to change the polarization direction of the light.
  • the polarizer and the reflective layer are shown in FIG. 3, and the pattern between the polarizer and the reflective layer is used to indicate the polarization state of the light.
  • the linear polarized light is incident on the quarter-slide and the liquid crystal, and the polarization direction of the linearly polarized light is changed by 90 degrees under the common phase retardation of the quarter-slide and the liquid crystal.
  • the polarization direction of the linearly polarized light incident on the reflective layer is different from the polarization direction of the linearly polarized light emitted from the polarizer by 90 degrees.
  • the linearly polarized light incident on the reflective layer can be reflected on the reflective layer and incident on the liquid crystal and the quarter slide again.
  • the polarization direction of the linearly polarized light is changed again by 90 degrees.
  • the polarization direction of the linearly polarized light incident on the polarizer is different from the polarization direction of the linearly polarized light emitted from the polarizer by 180 degrees, that is, the polarization direction of the linearly polarized light incident on the polarizer is parallel to the linearly polarized light emitted from the polarizer.
  • the linearly polarized light incident on the polarizer can pass through the polarizer, and is then emitted from the side of the polarizer away from the reflective layer, so that the pixel region has light emitted to achieve the on state shown in FIG.
  • FIG. 5A is a schematic diagram of a polarization state of light when a pixel region is in an off state according to an embodiment of the present invention.
  • the pixel when a certain pixel region needs to be controlled to emit light (ie, an off state), the pixel may be A voltage is applied to the liquid crystal corresponding to the region, so that the liquid crystal corresponding to the pixel region is deflected. At this time, the liquid crystal (not shown in Fig. 5A) does not change the polarization direction of the light, and the quarter slide (not shown in Fig. 5A) can change the polarization direction of the light.
  • the polarizer and the reflective layer are shown in FIG. 5A, and the pattern between the polarizer and the reflective layer is used to indicate the polarization state of the light.
  • the polarizer For example, light in the environment is incident on the polarizer, and the light passing through the polarizer becomes linearly polarized.
  • the linear polarized light is incident on the quarter slide and the liquid crystal, and under the phase retardation of the quarter slide, the polarization direction of the linear polarized light is changed by 45 degrees, and the linearly polarized light becomes circularly polarized.
  • the polarization direction of the circularly polarized light incident on the reflection layer is different from the polarization direction of the linearly polarized light emitted from the polarizer by 45 degrees.
  • the circularly polarized light incident on the reflective layer can be reflected on the reflective layer and incident on the liquid crystal and the quarter slide again.
  • the polarization direction of the circularly polarized light is changed again by 45 degrees, and the circularly polarized light becomes linearly polarized.
  • the polarization direction of the linearly polarized light incident on the polarizer is different from the polarization direction of the linearly polarized light emitted from the polarizer by 90 degrees, that is, the polarization direction of the linearly polarized light incident on the polarizer is perpendicular (not parallel) to the polarized light.
  • the on and off states of the pixel regions in the reflective display panel can be realized, thereby controlling the display image of the reflective display panel.
  • the thin film transistor 14 may include a plurality of functional film layers.
  • the plurality of functional film layers may include: a gate layer 141 , a gate insulating layer 142 , an active layer 143 , a source and drain layer 144 , and a passivation layer 145 .
  • the reflectivity of the functional film layer (such as the gate layer) of the plurality of functional film layers close to the second base substrate 12 is lower than that of the other functional film layers: the plurality of functional film layers are: Any functional film layer (such as a gate insulating layer, an active layer, a source/drain layer, and a passivation layer) other than the functional film layer of the second base substrate.
  • a functional film layer (such as a gate layer) of the plurality of functional film layers adjacent to the second substrate substrate has a reflectance of less than ten percent.
  • the thin film transistor 14 may include a plurality of functional film layers, and the plurality of functional film layers may include: a gate layer 141 , a gate insulating layer 142 , an active layer 143 , and a source and drain layer 144 . And a passivation layer 145.
  • a side of the second substrate 12 adjacent to the first substrate 11 is provided with a predetermined film layer C, and a side of the predetermined film layer C adjacent to the first substrate 11 is provided with a thin film transistor 14 and leads 15.
  • the orthographic projection area of the thin film transistor 14 on the second substrate 12 may coincide with the orthographic projection area of the predetermined film layer C on the second substrate 12, that is, the predetermined film layer C may be Used to block the thin film transistor 14.
  • the reflectance of the predetermined film layer C is lower than the reflectivity of any one of the plurality of functional film layers (such as the gate layer, the gate insulating layer, the active layer, the source drain layer or the passivation layer), Illustratively, the reflectivity of the predetermined film layer C is less than ten percent.
  • the second substrate is disposed on the display side of the reflective display panel, and the light source of the reflective display panel is ambient light.
  • the film layer in contact with the second substrate substrate has a lower reflectance than the other film layers, thereby enabling more Ambient light can enter the reflective display panel.
  • a side of the reflective layer 13 adjacent to the second substrate 12 may be provided with a color film layer 19 between the color film layer 19 and the thin film transistor 14. That is, the coloring layer is disposed on the side of the reflective layer adjacent to the second substrate, so that the reflective display panel can display a color image.
  • the reflective display panel may further include a pixel electrode D disposed on the second substrate, and a common electrode E disposed on a side of the color film layer 19 adjacent to the second substrate 12.
  • a plurality of pixel electrodes D may be disposed on the second substrate, and the plurality of pixel electrodes D are connected to the plurality of thin film transistors 14 in one-to-one correspondence, and the materials of the pixel electrodes D and the common electrodes E may be transparent conductive materials. Such as indium tin oxide.
  • the reflective layer is disposed on the first substrate, and the thin film transistor and the lead are disposed on the second substrate. Therefore, the reflective display panel
  • the display side is: a side of the second substrate that is away from the first substrate. Since the second base substrate has a large area, the second base substrate can completely cover the first base substrate, and when the reflective display panel is packaged, there is no need to cover the frame on the display side of the reflective display panel, thereby reducing The waste of the outer casing material is realized, and the display side of the reflective display panel can be realized without a frame.
  • FIG. 6 is a flowchart of a method for manufacturing a reflective display panel according to an embodiment of the present invention.
  • the method can be used to manufacture a reflective display panel as shown in FIG. 1 , as shown in FIG. 6 , the reflective display
  • the manufacturing method of the panel may include:
  • Step 601 forming a reflective layer on one side of the first substrate
  • Step 602 forming a thin film transistor and a lead on one side of the second substrate
  • Step 603 The first substrate and the second substrate are disposed opposite to each other such that the reflective layer is disposed adjacent to the second substrate, and the thin film transistor and the lead are disposed adjacent to the first substrate.
  • the reflective layer is disposed on the first substrate, and the thin film transistor and the lead are disposed on the second substrate. Therefore, the display side of the reflective display panel is: a side of the second substrate that is away from the first substrate. Since the second base substrate has a large area, the second base substrate can completely cover the first base substrate, and when the reflective display panel is packaged, there is no need to cover the frame on the display side of the reflective display panel, thereby reducing The waste of the outer casing material is realized, and the display side of the reflective display panel can be realized without a frame.
  • FIG. 7 is a flowchart of a method for manufacturing a reflective display panel according to an embodiment of the present invention.
  • the embodiment of the present invention is used to manufacture a reflective display panel as shown in FIG. 2A.
  • the manufacturing method of the reflective display panel may include:
  • Step 701 forming a reflective layer on one side of the first substrate.
  • FIG. 8A is a first partial structural diagram of a reflective display panel according to an embodiment of the present invention.
  • a reflective layer 13 may be formed on one side of the first substrate substrate 11 when manufacturing the reflective display panel.
  • the reflective layer is formed by a method such as coating or sputtering.
  • the reflective layer 13 may be covered with the first base substrate 11.
  • Step 702 forming a color film layer on the first substrate formed with the reflective layer.
  • FIG. 8B is a second partial structural diagram of a reflective display panel according to an embodiment of the present invention. As shown in FIG. 8B, after the reflective layer 13 is obtained on the first substrate substrate 11, the reflective layer 13 may be formed. The color film layer 19 is formed on the first substrate substrate 11, and the specific steps of forming the color film layer can be referred to the specific steps of forming the color film layer in the related art, which will not be described herein.
  • Step 703 forming a common electrode on the first substrate formed with the color film layer.
  • FIG. 8C is a third partial structural diagram of a reflective display panel according to an embodiment of the present invention. As shown in FIG. 8C, after a color film layer is obtained on the first substrate substrate 11, a color film layer 19 may be formed. A common electrode E is formed on the first base substrate 11. The material of the common electrode E may be a transparent conductive material such as indium tin oxide.
  • Step 704 forming a thin film transistor, a pixel electrode, and a lead on one side of the second substrate.
  • FIG. 8D is a schematic view showing a fourth partial structure of a reflective display panel according to an embodiment of the present invention. As shown in FIG. 8D, when a reflective display panel is manufactured, a film may be separately formed on one side of the second substrate 12. Transistor 14, pixel electrode D and lead 15.
  • the second substrate has a display region and a bonding region, and when the thin film transistor and the lead are formed on one side of the second substrate, the thin film transistor may be formed on the display region on the side of the second substrate. Lead wires are formed on the bonding region on the side of the second substrate.
  • a thin film transistor can include multiple functional film layers.
  • the reflectivity of the functional film layer adjacent to the second substrate substrate in the plurality of functional film layers is lower than the reflectivity of the other functional film layers, and the other functional film layers are: in addition to the second substrate among the plurality of functional film layers Any functional film layer other than the functional film layer of the substrate.
  • Specific steps of forming the thin film transistor 14, the pixel electrode D, and the lead 15 on one side of the second substrate may refer to specific steps in the related art, but it should be noted that the second substrate is adjacent to the thin film transistor.
  • the functional film layer is made of a low reflectivity material.
  • a preset may be first formed on one side of the second substrate before forming the thin film transistor, the pixel electrode and the lead. a film layer; then, a thin film transistor, a pixel electrode, and a lead may be formed on the second substrate formed with the predetermined film layer; wherein the orthographic projection area of the thin film transistor on the second substrate may be opposite to the predetermined film layer
  • the orthographic projection regions on the second substrate are coincident, and the reflectance of the predetermined film layer is lower than the reflectance of any of the functional film layers in the thin film transistor.
  • Step 705 The first substrate and the second substrate are disposed opposite to each other such that the reflective layer, the color film layer and the common electrode are disposed adjacent to the second substrate, and the thin film transistor, the pixel electrode and the lead are disposed adjacent to the first substrate. .
  • FIG. 8E is a schematic diagram showing a fifth partial structure of a reflective display panel according to an embodiment of the present invention.
  • a reflective layer 13, a color film layer 19, and a common electrode E are formed on the first base substrate 11, and after the thin film transistor 14, the pixel electrode D, and the lead 15 are formed on the second base substrate 12, the first substrate may be The substrate 11 and the second substrate 12 are disposed opposite to each other such that the reflective layer 13, the color film layer 19, and the common electrode E on the first substrate 11 are disposed adjacent to the second substrate 12, and the thin film transistor 14, the pixel electrode D, and The lead 15 is disposed close to the first base substrate 11, resulting in a structure as shown in Fig. 8E.
  • the reflective layer 13, the color film layer 19, and the common electrode E are disposed on the first substrate substrate 11 on the side close to the second base substrate 12, and the thin film transistor 14, the pixel electrode D, and the lead 15 are disposed at The second substrate 12 is on a side close to the first substrate substrate 11. After the first substrate and the second substrate are disposed opposite each other, the orthographic projection area of the first substrate 11 on the second substrate 12 is the display region of the second substrate 12.
  • Step 706 providing liquid crystal between the first substrate and the second substrate.
  • FIG. 8F is a sixth partial structural diagram of a reflective display panel according to an embodiment of the present invention.
  • a liquid crystal 16 may be disposed between the first substrate 11 and the second substrate 12 disposed opposite to each other.
  • Step 707 A quarter-slide is disposed on a side of the second substrate from the first substrate.
  • FIG. 8G is a seventh partial structural diagram of a reflective display panel according to an embodiment of the present invention. As shown in FIG. 8G, a quarter of the second substrate 12 away from the first substrate 11 may be attached. A slide 17 .
  • Step 708 providing a polarizer on a side of the quarter slide away from the first substrate.
  • the polarizer 17 may be disposed on the side of the quarter-slide away from the first substrate.
  • the angle between the transmission axis of the polarizer and the optical axis of the quarter-slide is 45 degrees, and the optical axis of the quarter-slide is parallel to the long axis of the liquid crystal.
  • the reflective layer is disposed on the first substrate, and the thin film transistor and the lead are disposed on the second substrate. Therefore, the display side of the reflective display panel is: a side of the second substrate that is away from the first substrate. Since the second base substrate has a large area, the second base substrate can completely cover the first base substrate, and when the reflective display panel is packaged, there is no need to cover the frame on the display side of the reflective display panel, thereby reducing The waste of the outer casing material is realized, and the display side of the reflective display panel can be realized without a frame.
  • Embodiments of the present invention provide a display device including the reflective display panel illustrated in FIG. 1, FIG. 2A or FIG. 2B.
  • FIG. 9 is a schematic structural diagram of a reflective display device provided by the related art
  • FIG. 10 is a schematic structural diagram of a reflective display device according to an embodiment of the present invention. It should be noted that FIG. 9 and FIG. 10 are merely schematic. A simplified schematic diagram of a reflective display device is shown.
  • the reflective display panel of the related art may include a first substrate substrate 01 and a second substrate substrate 02 which are disposed opposite to each other, and are disposed between the first substrate substrate 01 and the second substrate substrate 02.
  • the liquid crystal (not shown in Figure 9).
  • a thin film transistor 03 and a lead 04 are disposed on a side of the second base substrate 02 adjacent to the first base substrate 01, and a reflective layer (not shown in FIG. 9) is disposed on a side of the thin film transistor 03 adjacent to the first base substrate 01.
  • the thin film transistor 03 is disposed on the display region on the second substrate 02, the lead 04 is disposed on the bonding region of the second substrate 02, and the first substrate 01 is in the second liner.
  • the orthographic projection area on the base substrate 02 coincides with the display area.
  • the lead wire 04 is connected to the printed circuit board 22, and the printed circuit board 21 is connected to the thin film transistor 03 via the lead 04, and the printed circuit board 22 is disposed on the side of the second base substrate 02 away from the first base substrate 01.
  • the display side of the reflective display panel is the side of the first base substrate 01 away from the second base substrate 02 (the base substrate provided with the reflective layer), since the first base substrate 01 is on the second base substrate 02
  • the front projection area does not overlap with the binding area, so that the first base substrate 01 cannot completely cover the second base substrate 02, and when the reflective display panel is packaged, it is required to be reflective on the display side edge of the reflective display panel.
  • the side surface and the back surface of the display panel cover the outer casing 21. Therefore, when the reflective display panel is packaged, more outer casing materials are required, resulting in waste of the outer casing material.
  • a reflective layer (not shown in FIG. 10) is disposed on the first base substrate 11, and the thin film transistor 14 and the lead 15 are disposed on the second base substrate 12.
  • the display side of the reflective display panel is the side of the second base substrate 12 away from the first base substrate 11. Since the area of the second base substrate 12 is large, the second base substrate 12 can completely cover the first base substrate 11. When the reflective display panel is packaged, it is not necessary to cover the frame on the display side of the reflective display panel. Therefore, the waste of the outer casing material is reduced.
  • the reflective display device shown in FIG. 10 further includes a housing 21 and a printed circuit board 22, the printed circuit board 22 is connected to the thin film transistor 14 via a lead 15, and the printed circuit board 22 is disposed on the first substrate 11 away from the first substrate One side of the two base substrate 12; the edge of the outer casing 21 is in contact with the side surface of the second base substrate 12, and the second display substrate 12 except the second base substrate 12 and the quarter slide (not shown in FIG. 10)
  • the structure other than the polarizing plate (not shown in FIG. 10) and the printed circuit board 22 are located between the outer casing 21 and the second base substrate 12. That is, the structure between the second base substrate 12 and the printed circuit board 22, and the printed circuit board 22 are located between the outer casing 21 and the second base substrate 12.
  • the edge of the outer casing 21 in FIG. 10 may not be in contact with the side surface of the second base substrate 12, but is adjacent to the first base substrate 11 in the second base substrate 12. The surface is in contact. At this time, the structure between the second base substrate 12 and the printed circuit board 22, and the printed circuit board 22 are both located between the outer casing 21 and the second base substrate 12.
  • the display device may further include: a light source 23 , which may be disposed on a side of the second base substrate 12 away from the first base substrate 11 and used for reflective The display panel emits light. That is, the ambient light on which the reflective display panel in the display device emits light may be light emitted by the light source.
  • a light source 23 which may be disposed on a side of the second base substrate 12 away from the first base substrate 11 and used for reflective The display panel emits light. That is, the ambient light on which the reflective display panel in the display device emits light may be light emitted by the light source.
  • the reflective layer is disposed on the first substrate, and the thin film transistor and the lead are disposed on the second substrate.
  • the display side of the reflective display panel is a side of the second substrate that is away from the first substrate. Since the second base substrate has a large area, the second base substrate can completely cover the first base substrate, and when the reflective display panel is packaged, there is no need to cover the frame on the display side of the reflective display panel, thereby reducing The waste of the outer casing material is realized, and the display side of the reflective display panel can be realized without a frame.
  • the embodiments of the present invention are not limited to the embodiments of the present invention.
  • the sequence of the steps of the method embodiments provided by the embodiments of the present invention can be appropriately adjusted, and the steps can also be correspondingly increased or decreased according to the situation. Any person skilled in the art can easily think of changes within the technical scope disclosed in the present application. The method should be covered by the scope of the present invention and therefore will not be described again.

Abstract

一种反射式显示面板(1)及其制造方法、显示装置，属于显示技术领域。反射式显示面板(1)包括：相对设置的第一衬底基板(11)和第二衬底基板(12)，第一衬底基板(11)靠近第二衬底基板(12)的一侧设置有反射层(13)，第二衬底基板(12)靠近第一衬底基板(11)的一侧设置有薄膜晶体管(14)和引线(15)，解决了封装反射式显示面板(1)时需要使用的外壳材料较多，造成了外壳材料的浪费，且无法实现反射式显示面板(1)的显示侧无边框的问题，减少了外壳材料的浪费，且能够实现反射式显示面板(1)的显示侧无边框。

Description

反射式显示面板及其制造方法、显示装置
本申请要求于2017年3月3日提交中国国家知识产权局、申请号为201710124566.9、发明名称为“反射式显示面板及其制造方法、显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本申请涉及显示技术领域，特别涉及一种反射式显示面板及其制造方法、显示装置。
背景技术
随着显示技术的发展，出现了各种各样的显示面板，其中，反射式显示面板可以在未设置有背光源的情况下显示图像。
相关技术中，反射式显示面板可以包括相对设置的第一衬底基板和第二衬底基板，以及设置在第一衬底基板和第二衬底基板之间的液晶。第二衬底基板靠近第一衬底基板的一侧设置有薄膜晶体管和引线，薄膜晶体管靠近第一衬底基板的一侧设置有反射层。其中，薄膜晶体管设置在第二衬底基板上的显示区域，引线设置在第二衬底基板上的绑定(英文：Bonding)区域，第一衬底基板在第二衬底基板上的正投影区域与该显示区域重合。环境光能够从第一衬底基板远离第二衬底基板的一侧，依次穿过第一衬底基板和液晶到达第二衬底基板上的反射层，再被反射层反射，并再次穿过液晶和第一衬底基板，最终射出第一衬底基板，使得反射式显示面板显示图像。
相关技术中，反射式显示面板的显示侧为第一衬底基板远离第二衬底基板的一侧，由于第一衬底基板在第二衬底基板上的正投影区域并未与绑定区域重叠，使得第一衬底基板无法完全覆盖第二衬底基板。在封装反射式显示面板时，需要在反射式显示面板的显示侧边缘、反射式显示面板的侧面以及背面覆盖外壳，因此，封装反射式显示面板时需要使用的外壳材料较多，造成了外壳材料的浪费，且无法实现反射式显示面板的显示侧无边框。
发明内容
本申请提供了一种反射式显示面板及其制造方法、显示装置。所述技术方案如下：
第一方面，提供了一种反射式显示面板，所述反射式显示面板包括：相对设置的第一衬底基板和第二衬底基板，
所述第一衬底基板靠近所述第二衬底基板的一侧设置有反射层，所述第二衬底基板靠近所述第一衬底基板的一侧设置有薄膜晶体管和引线。
可选的，所述反射式显示面板还包括：设置在所述第一衬底基板和所述第二衬底基板之间的液晶，
所述第二衬底基板远离所述第一衬底基板的一侧设置有四分之一玻片；
所述四分之一玻片远离所述第一衬底基板的一侧设置有偏光片；
其中，所述偏光片的透光轴与所述四分之一玻片的光轴的夹角为45度，所述四分之一玻片的光轴与所述液晶的长轴平行。
可选的，所述薄膜晶体管包括多个功能膜层，
所述多个功能膜层中靠近所述第二衬底基板的功能膜层的反射率低于其他功能膜层的反射率，所述其他功能膜层为：所述多个功能膜层中除靠近所述第二衬底基板的功能膜层之外的任一功能膜层。
可选的，所述多个功能膜层中靠近所述第二衬底基板的功能膜层的反射率低于百分之十。
可选的，所述薄膜晶体管包括多个功能膜层，所述第二衬底基板靠近所述第一衬底基板的一侧设置有预设膜层；所述预设膜层靠近所述第一衬底基板的一侧设置有所述薄膜晶体管和所述引线；其中，所述薄膜晶体管在所述第二衬底基板上的正投影区域与所述预设膜层在所述第二衬底基板上的正投影区域重合，所述预设膜层的反射率低于所述多个功能膜层中任一功能膜层的反射率。
可选的，所述预设膜层的反射率低于百分之十。
可选的，所述反射层靠近所述第二衬底基板的一侧设置有彩色膜层，所述液晶位于所述彩色膜层与所述薄膜晶体管之间。
可选的，所述第二衬底基板具有显示区域和绑定区域，
所述薄膜晶体管位于所述显示区域，所述引线位于所述绑定区域；
所述第一衬底基板在所述第二衬底基板上的正投影区域为所述显示区域， 且所述反射层铺满所述第一衬底基板。
第二方面，提供了一种反射式显示面板的制造方法，所述方法包括：
在第一衬底基板的一侧形成反射层；
在第二衬底基板的一侧形成薄膜晶体管和引线；
将所述第一衬底基板与所述第二衬底基板相对设置，使得所述反射层靠近所述第二衬底基板设置，所述薄膜晶体管和所述引线靠近所述第一衬底基板设置。
可选的，在将所述第一衬底基板与所述第二衬底基板相对设置之后，所述方法还包括：
在所述第一衬底基板与所述第二衬底基板之间设置液晶；
在所述第二衬底基板远离所述第一衬底基板的一侧设置四分之一玻片；
在所述四分之一玻片远离所述第一衬底基板的一侧设置偏光片；
其中，所述偏光片的透光轴与所述四分之一玻片的光轴的夹角为45度，所述四分之一玻片的光轴与所述液晶的长轴平行。
可选的，所述薄膜晶体管包括多个功能膜层，
所述多个功能膜层中靠近所述第二衬底基板的功能膜层的反射率低于其他功能膜层的反射率，所述其他功能膜层为：所述多个功能膜层中除靠近所述第二衬底基板的功能膜层之外的任一功能膜层。
可选的，所述多个功能膜层中靠近所述第二衬底基板的功能膜层的反射率低于百分之十。
可选的，所述薄膜晶体管包括多个功能膜层，
所述在第二衬底基板的一侧形成薄膜晶体管和引线，包括：在所述第二衬底基板的一侧形成预设膜层；在形成有所述预设膜层的第二衬底基板上形成所述薄膜晶体管和所述引线；其中，所述薄膜晶体管在所述第二衬底基板上的正投影区域与所述预设膜层在所述第二衬底基板上的正投影区域重合，所述预设膜层的反射率低于所述薄膜晶体管中的任一功能膜层的反射率。
可选的，所述预设膜层的反射率低于百分之十。
可选的，在所述在第一衬底基板的一侧形成反射层之后，所述方法还包括:
在所述反射层远离所述第一衬底基板的一侧形成彩色膜层；
在所述第一衬底基板与所述第二衬底基板之间设置液晶后，所述液晶位于所述彩色膜层与所述薄膜晶体管之间。
可选的，所述反射层铺满所述第一衬底基板，所述第二衬底基板具有显示区域和绑定区域，在将所述第一衬底基板与所述第二衬底基板相对设置后，所述第一衬底基板在所述第二衬底基板上的正投影区域为所述显示区域，所述在第二衬底基板的一侧形成薄膜晶体管和引线，包括：
在所述第二衬底基板一侧的所述显示区域形成所述薄膜晶体管；
在所述第二衬底基板一侧的所述绑定区域形成所述引线。
第三方面，提供了一种显示装置，所述显示装置包括第一方面所述的反射式显示面板。
可选的，所述显示装置还包括：外壳和印刷电路板，
所述印刷电路板通过引线与所述薄膜晶体管连接，所述印刷电路板设置在第一衬底基板远离第二衬底基板的一侧；
所述外壳的边缘与所述第二衬底基板的侧面相接触，所述第二衬底基板和所述印刷电路板之间的结构，以及所述印刷电路板，均位于所述外壳与所述第二衬底基板之间。
可选的，所述显示装置还包括：外壳和印刷电路板，
所述印刷电路板通过引线与所述薄膜晶体管连接，所述印刷电路板设置在第一衬底基板远离第二衬底基板的一侧；
所述外壳的边缘与所述第二衬底基板中靠近所述第一衬底基板的表面相接触，所述第二衬底基板和所述印刷电路板之间的结构，以及所述印刷电路板，均位于所述外壳与所述第二衬底基板之间。
可选的，所述显示装置还包括：光源，
所述光源设置在所述第二衬底基板远离所述第一衬底基板的一侧，且用于向所述反射式显示面板发射光线。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的一种反射式显示面板的结构示意图；
图2A为本发明实施例提供的另一种反射式显示面板的结构示意图；
图2B为本发明实施例提供的又一种反射式显示面板的结构示意图；
图3为本发明实施例提供的一种像素区域的开态示意图；
图4为本发明实施例提供的一种像素区域的工作状态示意图；
图5A为本发明实施例提供的一种像素区域的关态示意图；
图5B为本发明实施例提供的一种反射式显示面板的局部结构示意图；
图5C为本发明实施例提供的另一种反射式显示面板的局部结构示意图；
图6为本发明实施例提供的一种反射式显示面板的制造方法的方法流程图；
图7为本发明实施例提供的另一种反射式显示面板的制造方法的方法流程图；
图8A为本发明实施例提供的反射式显示面板的第一种局部结构示意图；
图8B为本发明实施例提供的反射式显示面板的第二种局部结构示意图；
图8C为本发明实施例提供的反射式显示面板的第三种局部结构示意图；
图8D为本发明实施例提供的反射式显示面板的第四种局部结构示意图；
图8E为本发明实施例提供的反射式显示面板的第五种局部结构示意图；
图8F为本发明实施例提供的反射式显示面板的第六种局部结构示意图；
图8G为本发明实施例提供的反射式显示面板的第七种局部结构示意图；
图9为相关技术提供的一种反射式显示装置的结构示意图；
图10为本发明实施例提供的一种反射式显示装置的结构示意图；
图11为本发明实施例提供的一种反射式显示装置的结构示意图。
具体实施方式
为使本申请的目的、技术方案和优点更加清楚，下面将结合附图对本申请实施方式作进一步地详细描述。
图1为本发明实施例提供的一种反射式显示面板的结构示意图，如图1所示，该反射式显示面板1包括：相对设置的第一衬底基板11和第二衬底基板12，
第一衬底基板11靠近第二衬底基板12的一侧设置有反射层13，第二衬底基板12靠近第一衬底基板11的一侧设置有薄膜晶体管14和引线15。
综上所述，由于本发明实施例提供的反射式显示面板中，反射层设置在第一衬底基板上，薄膜晶体管和引线设置在第二衬底基板上，因此，该反射式显 示面板的显示侧为：第二衬底基板远离第一衬底基板的一侧。由于该第二衬底基板的面积较大，第二衬底基板能够完全覆盖第一衬底基板，在封装该反射式显示面板时，无需在反射式显示面板的显示侧覆盖边框，因此，减少了外壳材料的浪费，且能够实现反射式显示面板的显示侧无边框。
示例的，第二衬底基板12可以具有显示区域A和绑定区域B，薄膜晶体管14可以位于显示区域A，引线15可以位于绑定区域B。第一衬底基板11在第二衬底基板12上的正投影区域可以为该显示区域A，且反射层13可以铺满该第一衬底基板11。
需要说明的是，第二衬底基板上可以设置有多个薄膜晶体管，且该多个薄膜晶体管与第二衬底基板上的多个像素区域一一对应，每个薄膜晶体管位于该薄膜晶体管对应的像素区域内。
可选的，图2A为本发明实施例提供的另一种反射式显示面板的结构示意图，如图2A所示，在图1的基础上，该反射式显示面板1还可以包括：四分之一玻片17、偏光片18以及设置在第一衬底基板11和第二衬底基板12之间的液晶16。其中，第二衬底基板12远离第一衬底基板11的一侧设置有四分之一玻片17；四分之一玻片17远离第一衬底基板11的一侧设置有偏光片18。偏光片18的透光轴与四分之一玻片17的光轴的夹角为45度(也即偏光片18的透光轴的长度方向与四分之一玻片17的长轴方向的夹角为45度)，四分之一玻片17的光轴与液晶16的长轴平行(也即四分之一玻片17的长轴方向与液晶16的长轴方向平行)。
图3为本发明实施例提供的一种像素区域在开态时光线的偏振状态示意图，如图3所示，在需要控制某一像素区域发光(也即开态，环境光线能够射入该像素区域，并被该像素区域反射出反射式显示面板，使得该像素区域发光)时，可以不向该像素区域对应的液晶施加电压，使得该像素区域对应的液晶不发生偏转。此时，四分之一玻片和液晶(图3中未示出)均能够起到改变光线的偏振方向的作用。需要说明的是，图3中仅仅示出了偏光片和反射层，偏光片和反射层之间的图案用于表示光线的偏振状态。
示例的，环境中的光线射入偏光片，经过偏光片后的光线变为线偏光。线偏光射入四分之一玻片和液晶，并在四分之一玻片和液晶的共同相位延迟作用下，使得线偏光的偏振方向改变90度。此时射入反射层的线偏光的偏振方向与从偏光片射出的线偏光的偏振方向相差90度。进一步的，射入反射层的线 偏光能够在反射层上进行反射，并再次射入液晶和四分之一玻片。且在液晶和四分之一玻片的共同相位延迟作用下，使得线偏光的偏振方向再次改变90度。此时射入偏光片的线偏光的偏振方向与从偏光片射出的线偏光的偏振方向相差180度，也即，该射入偏光片的线偏光的偏振方向平行于从偏光片射出的线偏光的偏振方向，该射入偏光片的线偏光能够穿过偏光片，进而从偏光片远离反射层的一侧射出，使得该像素区域有光线射出，以实现图4所示的开态。
图5A为本发明实施例提供的一种像素区域在关态时光线的偏振状态示意图，如图5A所示，在需要控制某一像素区域不发光(也即关态)时，可以向该像素区域对应的液晶施加电压，使得该像素区域对应的液晶发生偏转。此时，液晶(图5A中未示出)并不会改变光线的偏振方向，而四分之一玻片(图5A中未示出)能够改变光线的偏振方向。需要说明的是，图5A中仅仅示出了偏光片和反射层，偏光片和反射层之间的图案用于表示光线的偏振状态。
示例的，环境中的光线射入偏光片，经过偏光片后的光线变为线偏光。线偏光射入四分之一玻片和液晶，并在四分之一玻片的相位延迟作用下，使得线偏光的偏振方向改变45度，且线偏光变为圆偏光。此时射入反射层的圆偏光的偏振方向与从偏光片射出的线偏光的偏振方向相差45度。进一步的，射入反射层的圆偏光能够在反射层上进行反射，并再次射入液晶和四分之一玻片。在四分之一玻片的相位延迟作用下，使得圆偏光的偏振方向再次改变45度，且圆偏光变为线偏光。此时射入偏光片的线偏光的偏振方向与从偏光片射出的线偏光的偏振方向相差90度，也即，该射入偏光片的线偏光的偏振方向垂直于(不平行于)从偏光片射出的线偏光的偏振方向，该射入偏光片的线偏光无法穿过偏光片，进而无法从偏光片远离反射层的一侧射出，使得该像素区域没有光线射出，以实现图4所示的关态。
也即，在液晶、四分之一玻片和偏光片的作用下，能够实现反射式显示面板中像素区域的开态和关态，进而控制反射式显示面板显示图像。
薄膜晶体管14可以包括多个功能膜层。
可选的，请结合图2A和图5B，该多个功能膜层可以包括：栅极层141、栅绝缘层142、有源层143、源漏极层144和钝化层145。该多个功能膜层中靠近第二衬底基板12的功能膜层(如栅极层)的反射率低于其他功能膜层的反射率，该其他功能膜层为：多个功能膜层中除靠近第二衬底基板的功能膜层之 外的任一功能膜层(如栅绝缘层、有源层、源漏极层和钝化层)。示例的，多个功能膜层中靠近第二衬底基板的功能膜层(如栅极层)的反射率低于百分之十。
或者，请结合图2B和图5C，薄膜晶体管14可以包括多个功能膜层，该多个功能膜层可以包括：栅极层141、栅绝缘层142、有源层143、源漏极层144和钝化层145。且第二衬底基板12靠近第一衬底基板11的一侧设置有预设膜层C，该预设膜层C靠近第一衬底基板11的一侧设置有薄膜晶体管14和引线15。需要说明的是，薄膜晶体管14在第二衬底基板12上的正投影区域可以与预设膜层C在第二衬底基板12上的正投影区域重合，也即该预设膜层C可以用于遮挡薄膜晶体管14。其中，预设膜层C的反射率低于多个功能膜层中任一功能膜层(如栅极层、栅绝缘层、有源层、源漏极层或钝化层)的反射率，示例的，预设膜层C的反射率低于百分之十。
也即，本发明实施例中，第二衬底基板设置在反射式显示面板的显示侧，且该反射式显示面板的光源为环境光，为了提高反射式显示面板为环境光的利用率，需要设置第二衬底基板上靠近第一衬底基板的一侧的多个膜层中，与第二衬底基板相接触的膜层的反射率低于别的膜层，从而能够使得更多的环境光线能够射入该反射式显示面板。
进一步的，如图2A或图2B所示，反射层13靠近第二衬底基板12的一侧可以设置有彩色膜层19，液晶16位于彩色膜层19与薄膜晶体管14之间。也即，反射层靠近第二衬底基板的一侧设置彩色膜层，使得该反射式显示面板能够显示彩色图像。
该反射式显示面板还可以包括设置在第二衬底基板上的像素电极D，以及设置在彩色膜层19靠近第二衬底基板12一侧的公共电极E。其中，第二衬底基板上可以设置有多个像素电极D，该多个像素电极D与多个薄膜晶体管14一一对应连接，且像素电极D和公共电极E的材质均可以为透明导电材质，如氧化铟锡。
综上所述，由于本发明实施例提供的反射式显示面板中，反射层设置在第一衬底基板上，薄膜晶体管和引线设置在第二衬底基板上，因此，该反射式显示面板的显示侧为：第二衬底基板远离第一衬底基板的一侧。由于该第二衬底基板的面积较大，第二衬底基板能够完全覆盖第一衬底基板，在封装该反射式显示面板时，无需在反射式显示面板的显示侧覆盖边框，因此，减少了外壳材 料的浪费，且能够实现反射式显示面板的显示侧无边框。
图6为本发明实施例提供的一种反射式显示面板的制造方法的方法流程图，该方法可以用于制造如图1所示的反射式显示面板，如图6所示，该反射式显示面板的制造方法可以包括：
步骤601、在第一衬底基板的一侧形成反射层；
步骤602、在第二衬底基板的一侧形成薄膜晶体管和引线；
步骤603、将第一衬底基板与第二衬底基板相对设置，使得反射层靠近第二衬底基板设置，薄膜晶体管和引线靠近第一衬底基板设置。
综上所述，由于本发明实施例提供的反射式显示面板的制造方法所制造的反射式显示面板中，反射层设置在第一衬底基板上，薄膜晶体管和引线设置在第二衬底基板上，因此，该反射式显示面板的显示侧为：第二衬底基板远离第一衬底基板的一侧。由于该第二衬底基板的面积较大，第二衬底基板能够完全覆盖第一衬底基板，在封装该反射式显示面板时，无需在反射式显示面板的显示侧覆盖边框，因此，减少了外壳材料的浪费，且能够实现反射式显示面板的显示侧无边框。
图7为本发明实施例提供的另一种反射式显示面板的制造方法的方法流程图，本发明实施例以制造如图2A所示的反射式显示面板为例，如图7所示，该反射式显示面板的制造方法可以包括：
步骤701、在第一衬底基板的一侧形成反射层。
图8A为本发明实施例提供的反射式显示面板的第一种局部结构示意图，如图8A所示，在制造反射式显示面板时，可以在第一衬底基板11的一侧形成反射层13，如采用涂覆或溅射等方法形成该反射层。该反射层13可以铺满第一衬底基板11。
步骤702、在形成有反射层的第一衬底基板上形成彩色膜层。
图8B为本发明实施例提供的反射式显示面板的第二种局部结构示意图，如图8B所示，在第一衬底基板11上得到反射层13后，还可以在形成有反射层13的第一衬底基板11上形成彩色膜层19，且形成彩色膜层的具体步骤可以参考相关技术中形成彩色膜层的具体步骤，本发明实施例在此不作赘述。
步骤703、在形成有彩色膜层的第一衬底基板上形成公共电极。
图8C为本发明实施例提供的反射式显示面板的第三种局部结构示意图，如图8C所示，在第一衬底基板11上得到彩色膜层后，还可以在形成有彩色膜层19的第一衬底基板11上形成公共电极E。公共电极E的材质可以为透明导电材质，如氧化铟锡。
步骤704、在第二衬底基板的一侧形成薄膜晶体管、像素电极和引线。
图8D为本发明实施例提供的反射式显示面板的第四种局部结构示意图，如图8D所示，在制造反射式显示面板时，还可以在第二衬底基板12的一侧分别形成薄膜晶体管14、像素电极D和引线15。
可选的，第二衬底基板具有显示区域和绑定区域，在第二衬底基板的一侧形成薄膜晶体管和引线时，可以在第二衬底基板一侧的显示区域形成薄膜晶体管，并在第二衬底基板一侧的绑定区域形成引线。
示例的，薄膜晶体管可以包括多个功能膜层。一方面，多个功能膜层中靠近第二衬底基板的功能膜层的反射率低于其他功能膜层的反射率，其他功能膜层为：多个功能膜层中除靠近第二衬底基板的功能膜层之外的任一功能膜层。在第二衬底基板的一侧分别形成薄膜晶体管14、像素电极D和引线15的具体步骤可以参考相关技术中的具体步骤，但是需要说明的是，在制造薄膜晶体管中靠近第二衬底基板的功能膜层所采用的材质为低反射率材质。
另一方面，当本发明实施例用于制造如图2B所示的反射式显示面板时，在形成薄膜晶体管、像素电极和引线前，还可以首先在第二衬底基板的一侧形成预设膜层；然后，可以在形成有预设膜层的第二衬底基板上形成薄膜晶体管、像素电极和引线；其中，薄膜晶体管在第二衬底基板上的正投影区域可以与预设膜层在第二衬底基板上的正投影区域重合，预设膜层的反射率低于薄膜晶体管中的任一功能膜层的反射率。示例的，在形成有预设膜层的第二衬底基板上形成薄膜晶体管和引线的具体步骤可以参考相关技术。
步骤705、将第一衬底基板与第二衬底基板相对设置，使得反射层、彩色膜层和公共电极靠近第二衬底基板设置，薄膜晶体管、像素电极和引线靠近第一衬底基板设置。
图8E为本发明实施例提供的反射式显示面板的第五种局部结构示意图。在第一衬底基板11上形成反射层13、彩色膜层19和公共电极E，且在第二衬底基板12上形成薄膜晶体管14、像素电极D和引线15后，可以将第一衬底基板11和第二衬底基板12相对设置，使得第一衬底基板11上的反射层13、 彩色膜层19和公共电极E靠近第二衬底基板12设置，薄膜晶体管14、像素电极D和引线15靠近第一衬底基板11设置，得到如图8E所示的结构。也即，使得反射层13、彩色膜层19以及公共电极E均设置在第一衬底基板11上靠近第二衬底基板12的一侧，薄膜晶体管14、像素电极D和引线15均设置在第二衬底基板12上靠近第一衬底基板11的一侧。且在将第一衬底基板和第二衬底基板相对设置后，第一衬底基板11在第二衬底基板12上的正投影区域为第二衬底基板12的显示区域。
步骤706、在第一衬底基板与第二衬底基板之间设置液晶。
图8F为本发明实施例提供的反射式显示面板的第六种局部结构示意图，在步骤706中，可以在相对设置的第一衬底基板11和第二衬底基板12之间设置液晶16，且设置液晶的具体步骤可以参考相关技术中在两个基板之间设置液晶的具体步骤。
步骤707、在第二衬底基板远离第一衬底基板的一侧设置四分之一玻片。
图8G为本发明实施例提供的反射式显示面板的第七种局部结构示意图，如图8G所示，可以在第二衬底基板12远离第一衬底基板11的一侧贴附四分之一玻片17。
步骤708、在四分之一玻片远离第一衬底基板的一侧设置偏光片。
如图2A所示，在步骤708中，在设置好四分之一玻片之后，可以在四分之一玻片远离第一衬底基板的一侧设置偏光片17。其中，偏光片的透光轴与四分之一玻片的光轴的夹角为45度，四分之一玻片的光轴与液晶的长轴平行。
综上所述，由于本发明实施例提供的反射式显示面板的制造方法所制造的反射式显示面板中，反射层设置在第一衬底基板上，薄膜晶体管和引线设置在第二衬底基板上，因此，该反射式显示面板的显示侧为：第二衬底基板远离第一衬底基板的一侧。由于该第二衬底基板的面积较大，第二衬底基板能够完全覆盖第一衬底基板，在封装该反射式显示面板时，无需在反射式显示面板的显示侧覆盖边框，因此，减少了外壳材料的浪费，且能够实现反射式显示面板的显示侧无边框。
本发明实施例提供了一种显示装置，该显示装置包括图1、图2A或图2B所示的反射式显示面板。
图9为相关技术提供的一种反射式显示装置的结构示意图，图10为本发 明实施例提供的一种反射式显示装置的结构示意图，需要说明的是，图9和图10仅仅是示意性的示出了反射式显示装置的简易结构示意图。
如图9所示，相关技术中反射式显示面板可以包括相对设置的第一衬底基板01和第二衬底基板02，以及设置在第一衬底基板01和第二衬底基板02之间的液晶(图9中未示出)。第二衬底基板02靠近第一衬底基板01的一侧设置有薄膜晶体管03和引线04，薄膜晶体管03靠近第一衬底基板01的一侧设置有反射层(图9中未示出)，其中，薄膜晶体管03设置在第二衬底基板02上的显示区域，引线04设置在第二衬底基板02上的绑定(英文：Bonding)区域，第一衬底基板01在第二衬底基板02上的正投影区域与该显示区域重合。引线04连接印刷电路板22，印刷电路板21通过引线04与薄膜晶体管03连接，印刷电路板22设置在第二衬底基板02远离第一衬底基板01的一侧。反射式显示面板的显示侧为第一衬底基板01远离第二衬底基板02(设置有反射层的衬底基板)的一侧，由于第一衬底基板01在第二衬底基板02上的正投影区域并未与绑定区域重叠，使得第一衬底基板01无法完全覆盖第二衬底基板02，在封装反射式显示面板时，需要在反射式显示面板的显示侧边缘、反射式显示面板的侧面以及背面覆盖外壳21，因此，封装反射式显示面板时需要使用的外壳材料较多，造成了外壳材料的浪费。
如图10所示，本发明实施例中，反射层(图10中未示出)设置在第一衬底基板11上，薄膜晶体管14和引线15设置在第二衬底基板12上，因此，反射式显示面板的显示侧为：第二衬底基板12远离第一衬底基板11的一侧。由于该第二衬底基板12的面积较大，第二衬底基板12能够完全覆盖第一衬底基板11，在封装该反射式显示面板时，无需在反射式显示面板的显示侧覆盖边框，因此，减少了外壳材料的浪费。
进一步的，图10所示的反射式显示装置还包括：外壳21和印刷电路板22，印刷电路板22通过引线15与薄膜晶体管14连接，印刷电路板22设置在第一衬底基板11远离第二衬底基板12的一侧；外壳21的边缘与第二衬底基板12的侧面相接触，反射式显示面板中除第二衬底基板12、四分之一玻片(图10中未示出)以及偏光片(图10中未示出)之外的结构与印刷电路板22均位于外壳21与第二衬底基板12之间。也即，第二衬底基板12和印刷电路板22之间的结构，以及印刷电路板22，均位于外壳21与第二衬底基板12之间。
可选的，如图11所示，图10中的外壳21的边缘还可以不与第二衬底基 板12的侧面相接触，而是与第二衬底基板12中靠近第一衬底基板11的表面相接触。此时，第二衬底基板12和印刷电路板22之间的结构，以及印刷电路板22均位于外壳21与第二衬底基板12之间。
可选的，请参考图10或图11，显示装置还可以包括：光源23，该光源23可以设置在第二衬底基板12远离第一衬底基板11的一侧，且用于向反射式显示面板发射光线。也即，显示装置中的反射式显示面板发光所依据的环境光可以为光源发出的光。
综上所述，由于本发明实施例提供的反射式显示装置中的反射式显示面板中，反射层设置在第一衬底基板上，薄膜晶体管和引线设置在第二衬底基板上，因此，该反射式显示面板的显示侧为：第二衬底基板远离第一衬底基板的一侧。由于该第二衬底基板的面积较大，第二衬底基板能够完全覆盖第一衬底基板，在封装该反射式显示面板时，无需在反射式显示面板的显示侧覆盖边框，因此，减少了外壳材料的浪费，且能够实现反射式显示面板的显示侧无边框。
需要说明的是，本发明实施例提供的方法实施例能够与显示面板实施例、显示装置实施例相互参考，本发明实施例对此不做限定。本发明实施例提供的方法实施例步骤的先后顺序能够进行适当调整，步骤也能够根据情况进行相应增减，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化的方法，都应涵盖在本发明的保护范围之内，因此不再赘述。
以上所述仅为本申请的可选实施例，并不用以限制本申请，凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。

Claims (20)

  1. 一种反射式显示面板，其中，所述反射式显示面板包括：相对设置的第一衬底基板和第二衬底基板，
    所述第一衬底基板靠近所述第二衬底基板的一侧设置有反射层，所述第二衬底基板靠近所述第一衬底基板的一侧设置有薄膜晶体管和引线。
  2. 根据权利要求1所述的反射式显示面板，其中，所述反射式显示面板还包括：设置在所述第一衬底基板和所述第二衬底基板之间的液晶，
    所述第二衬底基板远离所述第一衬底基板的一侧设置有四分之一玻片；
    所述四分之一玻片远离所述第一衬底基板的一侧设置有偏光片；
    其中，所述偏光片的透光轴与所述四分之一玻片的光轴的夹角为45度，所述四分之一玻片的光轴与所述液晶的长轴平行。
  3. 根据权利要求1或2所述的反射式显示面板，其中，所述薄膜晶体管包括多个功能膜层，
    所述多个功能膜层中靠近所述第二衬底基板的功能膜层的反射率低于其他功能膜层的反射率，所述其他功能膜层为：所述多个功能膜层中除靠近所述第二衬底基板的功能膜层之外的任一功能膜层。
  4. 根据权利要求3所述的反射式显示面板，其中，所述多个功能膜层中靠近所述第二衬底基板的功能膜层的反射率低于百分之十。
  5. 根据权利要求1或2所述的反射式显示面板，其中，所述薄膜晶体管包括多个功能膜层，所述第二衬底基板靠近所述第一衬底基板的一侧设置有预设膜层；所述预设膜层靠近所述第一衬底基板的一侧设置有所述薄膜晶体管和所述引线；
    其中，所述薄膜晶体管在所述第二衬底基板上的正投影区域与所述预设膜层在所述第二衬底基板上的正投影区域重合，所述预设膜层的反射率低于所述多个功能膜层中任一功能膜层的反射率。
  6. 根据权利要求5所述的反射式显示面板，其中，所述预设膜层的反射率低于百分之十。
  7. 根据权利要求2所述的反射式显示面板，其中，所述反射层靠近所述第二衬底基板的一侧设置有彩色膜层，所述液晶位于所述彩色膜层与所述薄膜晶体管之间。
  8. 根据权利要求1所述的反射式显示面板，其中，所述第二衬底基板具有显示区域和绑定区域，
    所述薄膜晶体管位于所述显示区域，所述引线位于所述绑定区域；
    所述第一衬底基板在所述第二衬底基板上的正投影区域为所述显示区域，且所述反射层铺满所述第一衬底基板。
  9. 一种反射式显示面板的制造方法，其中，所述方法包括：
    在第一衬底基板的一侧形成反射层；
    在第二衬底基板的一侧形成薄膜晶体管和引线；
    将所述第一衬底基板与所述第二衬底基板相对设置，使得所述反射层靠近所述第二衬底基板设置，所述薄膜晶体管和所述引线靠近所述第一衬底基板设置。
  10. 根据权利要求9所述的方法，其中，在将所述第一衬底基板与所述第二衬底基板相对设置之后，所述方法还包括：
    在所述第一衬底基板与所述第二衬底基板之间设置液晶；
    在所述第二衬底基板远离所述第一衬底基板的一侧设置四分之一玻片；
    在所述四分之一玻片远离所述第一衬底基板的一侧设置偏光片；
    其中，所述偏光片的透光轴与所述四分之一玻片的光轴的夹角为45度，所述四分之一玻片的光轴与所述液晶的长轴平行。
  11. 根据权利要求9或10所述的方法，其中，所述薄膜晶体管包括多个功能膜层，
    所述多个功能膜层中靠近所述第二衬底基板的功能膜层的反射率低于其他 功能膜层的反射率，所述其他功能膜层为：所述多个功能膜层中除靠近所述第二衬底基板的功能膜层之外的任一功能膜层。
  12. 根据权利要求11所述的方法，其中，所述多个功能膜层中靠近所述第二衬底基板的功能膜层的反射率低于百分之十。
  13. 根据权利要求9或10所述的方法，其中，所述薄膜晶体管包括多个功能膜层，所述在第二衬底基板的一侧形成薄膜晶体管和引线，包括：
    在所述第二衬底基板的一侧形成预设膜层；
    在形成有所述预设膜层的第二衬底基板上形成所述薄膜晶体管和所述引线；
    其中，所述薄膜晶体管在所述第二衬底基板上的正投影区域与所述预设膜层在所述第二衬底基板上的正投影区域重合，所述预设膜层的反射率低于所述薄膜晶体管中的任一功能膜层的反射率。
  14. 根据权利要求13所述的方法，其中，所述预设膜层的反射率低于百分之十。
  15. 根据权利要求10所述的反射式显示面板，其中，在所述在第一衬底基板的一侧形成反射层之后，所述方法还包括:
    在所述反射层远离所述第一衬底基板的一侧形成彩色膜层；
    在所述第一衬底基板与所述第二衬底基板之间设置液晶后，所述液晶位于所述彩色膜层与所述薄膜晶体管之间。
  16. 根据权利要求9所述的反射式显示面板，其中，所述反射层铺满所述第一衬底基板，所述第二衬底基板具有显示区域和绑定区域，在将所述第一衬底基板与所述第二衬底基板相对设置后，所述第一衬底基板在所述第二衬底基板上的正投影区域为所述显示区域，所述在第二衬底基板的一侧形成薄膜晶体管和引线，包括：
    在所述第二衬底基板一侧的所述显示区域形成所述薄膜晶体管；
    在所述第二衬底基板一侧的所述绑定区域形成所述引线。
  17. 一种显示装置，其中，所述显示装置包括反射式显示面板，所述反射式显示面板包括：相对设置的第一衬底基板和第二衬底基板，
    所述第一衬底基板靠近所述第二衬底基板的一侧设置有反射层，所述第二衬底基板靠近所述第一衬底基板的一侧设置有薄膜晶体管和引线。
  18. 根据权利要求17所述的显示装置，其中，所述显示装置还包括：外壳和印刷电路板，
    所述印刷电路板通过引线与所述薄膜晶体管连接，所述印刷电路板设置在第一衬底基板远离第二衬底基板的一侧；
    所述外壳的边缘与所述第二衬底基板的侧面相接触，所述第二衬底基板和所述印刷电路板之间的结构，以及所述印刷电路板，均位于所述外壳与所述第二衬底基板之间。
  19. 根据权利要求17所述的显示装置，其中，所述显示装置还包括：外壳和印刷电路板，
    所述印刷电路板通过引线与所述薄膜晶体管连接，所述印刷电路板设置在第一衬底基板远离第二衬底基板的一侧；
    所述外壳的边缘与所述第二衬底基板中靠近所述第一衬底基板的表面相接触，所述第二衬底基板和所述印刷电路板之间的结构，以及所述印刷电路板，均位于所述外壳与所述第二衬底基板之间。
  20. 根据权利要求17至19任一所述的显示装置，其中，所述显示装置还包括：光源，
    所述光源设置在所述第二衬底基板远离所述第一衬底基板的一侧，且用于向所述反射式显示面板发射光线。
PCT/CN2018/076719 2017-03-03 2018-02-13 反射式显示面板及其制造方法、显示装置 WO2018157744A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/077,102 US20210181575A1 (en) 2017-03-03 2018-02-13 Reflective display panel and manufacturing thereof, and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710124566.9A CN106842683A (zh) 2017-03-03 2017-03-03 反射式显示面板及其制造方法、显示装置
CN201710124566.9 2017-03-03

Publications (1)

Publication Number Publication Date
WO2018157744A1 true WO2018157744A1 (zh) 2018-09-07

Family

ID=59137925

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/076719 WO2018157744A1 (zh) 2017-03-03 2018-02-13 反射式显示面板及其制造方法、显示装置

Country Status (3)

Country Link
US (1) US20210181575A1 (zh)
CN (1) CN106842683A (zh)
WO (1) WO2018157744A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106842683A (zh) * 2017-03-03 2017-06-13 京东方科技集团股份有限公司 反射式显示面板及其制造方法、显示装置
CN114545677B (zh) * 2022-02-24 2023-10-13 京东方科技集团股份有限公司 反射式显示模组及显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1124052A (ja) * 1997-07-02 1999-01-29 Seiko Instr Inc 反射型カラー表示装置およびその製造方法
CN1869798A (zh) * 2005-05-27 2006-11-29 三星电子株式会社 液晶显示器及其薄膜晶体管阵列面板的制造方法
CN101852942A (zh) * 2009-04-02 2010-10-06 北京京东方光电科技有限公司 全反射式液晶显示器
CN102466929A (zh) * 2010-11-09 2012-05-23 三星移动显示器株式会社 液晶显示装置及液晶显示装置的制造方法
CN104614891A (zh) * 2015-02-17 2015-05-13 深圳市华星光电技术有限公司 反射式柔性液晶显示器
CN106842683A (zh) * 2017-03-03 2017-06-13 京东方科技集团股份有限公司 反射式显示面板及其制造方法、显示装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3374911B2 (ja) * 1999-09-30 2003-02-10 日本電気株式会社 透過液晶パネル、画像表示装置、パネル製造方法
JP3538149B2 (ja) * 2001-01-30 2004-06-14 Ｎｅｃ液晶テクノロジー株式会社 反射型液晶表示装置及びその製造方法
JP2004061775A (ja) * 2002-07-26 2004-02-26 Alps Electric Co Ltd アクティブマトリクス型表示装置
CN105870174A (zh) * 2016-05-03 2016-08-17 广东顺德中山大学卡内基梅隆大学国际联合研究院 双栅极光电薄膜晶体管的光栅极复合膜结构及薄膜晶体管

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1124052A (ja) * 1997-07-02 1999-01-29 Seiko Instr Inc 反射型カラー表示装置およびその製造方法
CN1869798A (zh) * 2005-05-27 2006-11-29 三星电子株式会社 液晶显示器及其薄膜晶体管阵列面板的制造方法
CN101852942A (zh) * 2009-04-02 2010-10-06 北京京东方光电科技有限公司 全反射式液晶显示器
CN102466929A (zh) * 2010-11-09 2012-05-23 三星移动显示器株式会社 液晶显示装置及液晶显示装置的制造方法
CN104614891A (zh) * 2015-02-17 2015-05-13 深圳市华星光电技术有限公司 反射式柔性液晶显示器
CN106842683A (zh) * 2017-03-03 2017-06-13 京东方科技集团股份有限公司 反射式显示面板及其制造方法、显示装置

Also Published As

Publication number Publication date
CN106842683A (zh) 2017-06-13
US20210181575A1 (en) 2021-06-17

Similar Documents

Publication Publication Date Title
TWI437322B (zh) 顯示裝置
US7920228B2 (en) Dual liquid crystal display device
US9599869B2 (en) Display apparatus
TW200815877A (en) Liquid crystal display device
JP2007017798A (ja) 液晶表示装置
TWI728338B (zh) 顯示面板
JP2006323302A (ja) 表示装置
US20180004037A1 (en) Reflective liquid crystal display device
US20050156558A1 (en) Liquid crystal display with two surface display function
WO2018157744A1 (zh) 反射式显示面板及其制造方法、显示装置
US10775658B2 (en) Liquid crystal display device and method for manufacturing liquid crystal display device
US20060001806A1 (en) Liquid crystal display device
KR20180063799A (ko) 반사형 액정 표시 장치
JP2005338553A (ja) 液晶表示装置および電子機器
JP2009163085A (ja) 電気光学装置、電気光学装置の製造方法、及び電子機器
KR102522531B1 (ko) 미러 디스플레이 패널
US9904502B2 (en) Dual display equipment with enhanced visibility and suppressed reflections
JP4868798B2 (ja) 液晶表示装置、及び、液晶表示装置の製造方法
JP4409650B2 (ja) 時計
JP2007065405A (ja) 液晶表示装置
KR101192755B1 (ko) 반투과형 액정표시소자
KR102485632B1 (ko) 표시장치
WO2023130209A1 (zh) 显示装置及后视镜
JP2012118296A (ja) 液晶装置および電子機器
US7916243B2 (en) Dual liquid crystal display device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18760770

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18760770

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 06.03.2020)

122 Ep: pct application non-entry in european phase

Ref document number: 18760770

Country of ref document: EP

Kind code of ref document: A1