WO2018149019A1 - 有机电致发光显示装置及其制作方法 - Google Patents

有机电致发光显示装置及其制作方法 Download PDF

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WO2018149019A1
WO2018149019A1 PCT/CN2017/078345 CN2017078345W WO2018149019A1 WO 2018149019 A1 WO2018149019 A1 WO 2018149019A1 CN 2017078345 W CN2017078345 W CN 2017078345W WO 2018149019 A1 WO2018149019 A1 WO 2018149019A1
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layer
substrate
disposed
organic electroluminescent
display device
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English (en)
French (fr)
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黄添旺
崔磊
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/522,282 priority Critical patent/US20180294318A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention belongs to the technical field of organic electroluminescence display, and in particular to an organic electroluminescence display device and a manufacturing method thereof.
  • OLED Organic Light-Emitting Diode
  • a Thin Film Encapsulation (TFE) method is one of the most suitable packaging methods.
  • the film encapsulation method uses a polymer organic film and an inorganic film to be alternately deposited on the surface of the OLED.
  • the inorganic film has good water-oxygen barrier properties, and the polymer organic film can well absorb and stress the layer and the layer to avoid densification.
  • the inorganic film produces cracks and reduces the barrier to water and oxygen.
  • a flat layer PPN
  • PPN flat layer
  • the present invention provides an organic electroluminescence display device capable of reducing a process while reducing the thickness of a product, and a method of fabricating the same.
  • an organic electroluminescent display device comprising: a substrate; a switching layer disposed on the substrate, the switching layer comprising a plurality of switching devices arranged in an array; organic electro a light emitting layer disposed on the switch layer, the organic electroluminescent layer comprising a plurality of organic electroluminescent devices arranged in an array, the organic electroluminescent device being controlled to emit light by the corresponding switching device; a first planar layer disposed on the substrate and covering the switch layer and the organic electroluminescent layer; a touch layer disposed on the substrate and covering the first planar layer.
  • the switching device includes: an active layer disposed on the substrate; a gate insulating layer disposed on the active layer; a gate disposed on the gate insulating layer; a dielectric layer disposed on the substrate and covering the active layer, the gate insulating layer and the gate, the interlayer dielectric layer having a first via, the first via exposed An active layer; a source and a drain are disposed on the interlayer dielectric layer, and the source and the drain are respectively in contact with the exposed active layer through the first via; a flat layer disposed on the interlayer dielectric layer and covering the source and the drain, the second planar layer having a second via hole, the second via hole exposing the drain.
  • the switching device further includes a buffer layer disposed between the active layer and the substrate and between the interlayer dielectric layer and the substrate.
  • the material of the active layer is amorphous silicon or low temperature polycrystalline silicon or carbon nanotubes or graphene or metal oxide semiconductor.
  • the organic electroluminescent device comprises: a bottom electrode disposed on the second planar layer, the bottom electrode being in contact with the exposed drain through the second via; a pixel defining layer, setting On the second flat layer and covering the bottom electrode, the pixel defining layer has a third via hole, the third via hole exposing the bottom electrode; and the organic light emitting layer group is disposed on the exposed
  • the top electrode is disposed on the organic light emitting layer group; wherein the first flat layer is disposed on the pixel defining layer and covers the top electrode.
  • the organic light emitting layer group includes, in order from the bottom electrode to the top electrode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer.
  • the touch layer includes: a first insulating layer disposed on the substrate and covering the first flat layer; a touch electrode layer disposed on the first insulating layer; and a second insulating layer And disposed on the touch electrode layer.
  • the substrate is a flexible substrate.
  • the substrate is transparent or translucent or opaque.
  • a method of fabricating the above-described organic electroluminescent display device further comprising: providing a substrate; forming a plurality of switching devices forming an array arrangement on the substrate to form a switching layer; forming a plurality of organic electroluminescent devices formed in an array on the switching layer to form an organic electroluminescent layer; the organic electroluminescent device is controlled to emit light by the corresponding switching device; A first planar layer directly covering the switching layer and the organic electroluminescent layer is formed on the substrate; and a touch layer directly covering the first planar layer is formed on the substrate.
  • the organic electroluminescence display device of the present invention and the method of fabricating the same, directly encapsulating a switch layer and an organic electroluminescent layer by using a flat layer without using an additional Thin Film Encapsulation (TFE) layer,
  • TFE Thin Film Encapsulation
  • FIG. 1 is a schematic structural view of an organic electroluminescence display device according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram showing the specific structure of a switching device, an organic electroluminescent device, and a touch layer according to an embodiment of the present invention
  • FIG. 3 is a flow chart of a method of fabricating an organic electroluminescent display device in accordance with an embodiment of the present invention.
  • FIG. 1 is a schematic structural view of an organic electroluminescence display device according to an embodiment of the present invention.
  • an organic electroluminescent display device includes a substrate 100, a switching layer 200, an organic electroluminescent layer 300, a first planarization layer (PLN) 400, and a touch layer 500.
  • PPN planarization layer
  • the substrate 100 can be a flexible substrate that can be transparent, translucent or opaque.
  • the substrate 100 is transparent or translucent for viewing the light emitted from the organic electroluminescent layer 300 through the substrate 100.
  • the substrate 100 may be transparent, translucent or opaque.
  • the switching layer 200 is disposed on the substrate 100, and the switching layer 200 includes a plurality of switching devices 200A arranged in an array; or the switching layer 200 is composed of a plurality of switching devices 200A arranged in an array.
  • the organic electroluminescent layer 300 is disposed on the switching layer 200, and the organic electroluminescent layer 300 includes a plurality of organic electroluminescent devices 300A arranged in an array; or the organic electroluminescent layer 300 is arranged by a plurality of arrays
  • the electroluminescent device 300A is composed of. Each of the organic electroluminescent devices 300A is controlled to emit light by a corresponding one of the switching devices 200A.
  • the first planarization layer 400 is disposed on the substrate 100, and the first planarization layer 400 directly covers the switch layer 200 and the organic electroluminescent layer 300. It should be noted that the first planarization layer 400 may be formed of an organic or inorganic insulating material.
  • the touch layer 500 is disposed on the substrate 100 , and the touch layer 500 covers the first flat layer 400 .
  • the switch layer 200 and the organic electroluminescent layer 300 are directly encapsulated by the first planar layer 400 without additional use of a Thin Film Encapsulation (TFE) layer, which can reduce the cost while reducing the product. thickness.
  • TFE Thin Film Encapsulation
  • FIG. 2 is a schematic diagram showing the specific structure of a switching device, an organic electroluminescent device, and a touch layer according to an embodiment of the present invention.
  • the switching device 200A includes a buffer layer 210, an active layer 220, a gate insulating layer 230, a gate 240, an interlayer dielectric (ILD) layer 250, a source 260, a drain 270, and A second flat layer (PLN) 280.
  • ILD interlayer dielectric
  • the buffer layer 210 is disposed on the substrate 100.
  • the buffer layer 210 may be omitted.
  • the active layer 220 is disposed on the buffer layer 210. It should be noted that, after the buffer layer 210 is omitted, the active layer 220 may be directly disposed on the substrate 100.
  • the material of the active layer 220 may be amorphous silicon or low temperature polycrystalline silicon or carbon nanotubes or graphene or metal oxide semiconductor.
  • the gate insulating layer 230 is disposed on the active layer 220.
  • the gate 240 is disposed on the gate insulating layer 230.
  • the interlayer dielectric layer 250 is disposed on the buffer layer 210, and the interlayer dielectric layer 250 covers the active layer 220, the gate insulating layer 230, and the gate 240. It should be noted that, after the buffer layer 210 is omitted, the interlayer dielectric layer 250 may be directly disposed on the substrate 100, and the interlayer dielectric layer 250 covers the active layer 220, the gate insulating layer 230, and the gate 240.
  • a first via 251 is etched on the interlayer dielectric layer 250, and the first via 251 can expose the active layer 220.
  • the source 260 and the drain 270 are disposed on the interlayer dielectric layer 250, and the source 260 and the drain 270 are respectively in contact with the exposed active layer 220 through the respective first vias 251.
  • the second planarization layer 280 is disposed on the interlayer dielectric layer 250, and the second planarization layer 280 covers the source 260 and the drain 270. Further, a second via 281 is etched on the second planar layer 280, and the second via 281 exposes the drain 270.
  • the organic electroluminescent device 300A includes a bottom electrode 310, a pixel defining layer (PDL) 320, an organic light emitting layer group 330, and a top electrode 340.
  • PDL pixel defining layer
  • the bottom electrode 310 is disposed on the second flat layer 280, and the bottom electrode 310 is in contact with the exposed drain 270 through the second via 281.
  • the bottom electrode 310 is most typically provided as an anode.
  • the bottom electrode 310 is also a mirror.
  • the bottom electrode 310 may be made of a reflective metal, and should be thin enough to have a partial light transmittance at a wavelength of emitted light, which is said to be translucent, Or the bottom electrode 310 may be made of a transparent metal oxide such as indium tin oxide or Zinc oxide, etc.
  • the bottom electrode 310 may be made of a reflective metal and should be thick enough to be substantially opaque and to be a full mirror.
  • the pixel defining layer 320 is disposed on the second flat layer 280, and the pixel defining layer 320 covers the bottom electrode 310. Further, a third via 321 is etched on the pixel defining layer 320, and the third via 321 exposes the bottom electrode 310.
  • the organic light emitting layer group 330 is disposed on the exposed bottom electrode 310.
  • the top electrode 340 is disposed on the organic light emitting layer group 330.
  • the first flat layer 400 is disposed on the pixel defining layer 320, and the first flat layer 400 covers the top electrode 340.
  • the top electrode 340 is most typically configured as a cathode.
  • the top electrode 340 is also a mirror.
  • the top electrode 340 may be made of a reflective metal and should be thin enough to have a partial light transmittance at the wavelength of the emitted light, which is said to be translucent.
  • the top electrode 340 may be made of a transparent metal oxide such as indium tin oxide or zinc tin oxide.
  • the top electrode 340 may be made of a reflective metal and should be thick enough to be substantially opaque and to be a full mirror.
  • the organic light-emitting layer group 330 includes, in order from the bottom electrode 310 to the top electrode 340, a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), and an electron transport layer (ETL). And an electron injection layer (EIL), but the invention is not limited thereto.
  • HIL hole injection layer
  • HTL hole transport layer
  • EML emission layer
  • ETL electron transport layer
  • EIL electron injection layer
  • the touch layer 500 includes a first insulating layer 510 , a touch electrode layer 520 , and a second insulating layer 530 .
  • the first insulating layer 510 covers the first planar layer 400;
  • the touch electrode layer 520 covers the first insulating layer 510;
  • the second insulating layer 530 covers the touch electrode layer 520.
  • FIG. 3 is a flow chart of a method of fabricating an organic electroluminescent display device in accordance with an embodiment of the present invention.
  • a method of fabricating an organic electroluminescence display device includes the steps of:
  • S320 forming a plurality of switching devices 200A forming an array arrangement on the substrate 100 to form the switching layer 200;
  • S330 forming a plurality of organic electroluminescent devices 300A forming an array arrangement on the switching layer 200 to form an organic electroluminescent layer 300; wherein each of the organic electroluminescent devices 300A is controlled to emit light by a corresponding one of the switching devices 200A ;
  • S340 forming a first flat layer 400 on the substrate 100 forming a direct cover switch layer 200 and an organic electroluminescent layer 300;
  • the organic electroluminescent display device and the method of fabricating the same directly encapsulate the switch layer 200 and the organic electroluminescent layer 300 by using the first planar layer 400 without additional use of a thin film package (Thin The Film Encapsulation (TFE) layer reduces the thickness of the product while saving costs.
  • TFE Thin The Film Encapsulation

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  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
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  • Electroluminescent Light Sources (AREA)
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Abstract

一种有机电致发光显示装置，其包括：基板（100）；开关层（200），设置于基板上，开关层包括阵列排布的多个开关器件（200A）；有机电致发光层（300），设置于开关层上，有机电致发光层包括阵列排布的多个有机电致发光器件（300A），有机电致发光器件由对应的开关器件控制发光；第一平坦层（400），设置于基板上且覆盖开关层和有机电致发光层；触控层（500），设置于基板上且覆盖第一平坦层。提供了一种有机电致发光显示装置的制作方法。有机电致发光显示装置及其制作方法，利用一平坦层直接封装开关层和有机电致发光层，而无需额外使用薄膜封装层，在减少制程、节省成本的同时能够减小产品的厚度。

Description

有机电致发光显示装置及其制作方法 技术领域
本发明属于有机电致发光显示技术领域，具体地讲，涉及一种有机电致发光显示装置及其制作方法。
背景技术
近年来，有机发光二极管(Organic Light-Emitting Diode，OLED)成为国内外非常热门的新兴平面显示装置产品，这是因为OLED显示装置具有自发光、广视角、短反应时间、高发光效率、广色域、低工作电压、薄厚度、可制作大尺寸与可挠曲的面板及制程简单等特性，而且它还具有低成本的潜力。
在柔性OLED显示装置的制程中，薄膜封装(Thin Film Encapsulation，TFE)方法是最适合的封装方法之一。目前，薄膜封装方法采用聚合物有机薄膜和无机薄膜交替沉积在OLED表面，无机薄膜具有良好的水氧阻隔性，聚合物有机薄膜可以很好的吸收与分散层与层之间的应力，避免致密的无机薄膜产生裂痕而降低对水氧的阻隔性。
在采用柔性OLED显示装置的触控显示装置中，通常在TFE封装层上加一层平坦层(PLN)，而后在平坦层上再封装触控层，从而实现触控功能的集成，但是这样会增加制程，并且会增加产品的厚度。
发明内容
本发明提供了一种能够减少制程的同时降低产品厚度的有机电致发光显示装置及其制作方法。
根据本发明的一方面，提供了一种有机电致发光显示装置，其包括：基板；开关层，设置于所述基板上，所述开关层包括阵列排布的多个开关器件；有机电致发光层，设置于所述开关层上，所述有机电致发光层包括阵列排布的多个有机电致发光器件，所述有机电致发光器件由对应的所述开关器件控制发光； 第一平坦层，设置于所述基板上且覆盖所述开关层和所述有机电致发光层；触控层，设置于所述基板上且覆盖所述第一平坦层。
可选地，所述开关器件包括：有源层，设置于所述基板上；栅极绝缘层，设置于所述有源层上；栅极，设置于所述栅极绝缘层上；层间电介质层，设置于所述基板上且覆盖所述有源层、所述栅极绝缘层和所述栅极，所述层间电介质层上具有第一过孔，所述第一过孔暴露所述有源层；源极和漏极，设置于所述层间电介质层上，所述源极和所述漏极通过所述第一过孔分别与暴露的所述有源层接触；第二平坦层，设置于所述层间电介质层上且覆盖所述源极和所述漏极，所述第二平坦层上具有第二过孔，所述第二过孔暴露所述漏极。
可选地，所述开关器件还包括：缓冲层，设置于所述有源层和所述基板之间以及所述层间电介质层和所述基板之间。
可选地，所述有源层的材料为非晶硅或低温多晶硅或碳纳米管或石墨烯或金属氧化物半导体。
可选地，所述有机电致发光器件包括：底电极，设置于所述第二平坦层，所述底电极通过所述第二过孔与暴露的所述漏极接触；像素限定层，设置于所述第二平坦层上且覆盖所述底电极，所述像素限定层上具有第三过孔，所述第三过孔暴露出所述底电极；有机发光层组，设置于暴露出的所述底电极上；顶电极，设置于所述有机发光层组上；其中，所述第一平坦层设置于所述像素限定层上且覆盖所述顶电极。
可选地，所述有机发光层组从所述底电极到所述顶电极顺序包括：空穴注入层、空穴传输层、发光层、电子传输层以及电子注入层。
可选地，所述触控层包括：第一绝缘层，设置于所述基板上且覆盖所述第一平坦层；触控电极层，设置于所述第一绝缘层上；第二绝缘层，设置于所述触控电极层上。
可选地，所述基板为柔性基板。
可选地，所述基板是透明的或半透明的或不透明的。
根据本发明的另一方面，还提供了一种上述的有机电致发光显示装置的制作方法，其包括：提供一基板；在所述基板上制作形成阵列排布的多个开关器件，以形成开关层；在所述开关层上制作形成阵列排布的多个有机电致发光器件，以形成有机电致发光层；所述有机电致发光器件由对应的所述开关器件控制发光；在所述基板上制作形成直接覆盖所述开关层和所述有机电致发光层的第一平坦层；在所述基板上制作形成直接覆盖所述第一平坦层的触控层。
本发明的有益效果：本发明的有机电致发光显示装置及其制作方法，利用一平坦层直接封装开关层和有机电致发光层，而无需额外使用薄膜封装(Thin Film Encapsulation，TFE)层，在减少制程、节省成本的同时能够减小产品的厚度。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1是根据本发明的实施例的有机电致发光显示装置的结构示意图；
图2是根据本发明的实施例的开关器件、有机电致发光器件和触控层的具体结构示意图；
图3是根据本发明的实施例的有机电致发光显示装置的制作方法的流程图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
在附图中，为了清楚器件，夸大了层和区域的厚度。相同的标号在整个说明书和附图中表示相同的元器件。
将理解的是，当诸如层、膜、区域或基底的元件被称作“在”另一元件“上”时，该元件可以直接在所述另一元件上，或者也可以存在中间元件。可选择地，当元件被称作“直接在”另一元件“上”时，不存在中间元件。
图1是根据本发明的实施例的有机电致发光显示装置的结构示意图。
参照图1，根据本发明的实施例的有机电致发光显示装置包括：基板100、开关层200、有机电致发光层300、第一平坦层(PLN)400和触控层500。
基板100可以是柔性基板，其可以是透明的、半透明的或者不透明的。对于通过基板100观察有机电致发光层300发光来说，基板100是透明的或半透明的。对于不通过基板100观察有机电致发光层300发光来说，基板100的可以是透明的、半透明的或者不透明的。
开关层200设置于基板100上，并且开关层200包括阵列排布的多个开关器件200A；或者说开关层200由阵列排布的多个开关器件200A组成。
有机电致发光层300设置于开关层200上，并且有机电致发光层300包括阵列排布的多个有机电致发光器件300A；或者说有机电致发光层300由阵列排布的多个有机电致发光器件300A组成。每个有机电致发光器件300A由对应的一个开关器件200A控制发光。
第一平坦层400设置于基板100上，并且第一平坦层400直接覆盖开关层200和有机电致发光层300。需要说明的是，第一平坦层400可以由有机或者无机绝缘材料形成。
触控层500设置于基板100上，并且触控层500覆盖第一平坦层400。
在本实施例中，利用第一平坦层400直接封装开关层200和有机电致发光层300，而无需额外使用薄膜封装(Thin Film Encapsulation，TFE)层，在节省成本的同时能够减小产品的厚度。
下面将对开关器件200A、有机电致发光器件300A和触控层500的具体结构进行描述。图2是根据本发明的实施例的开关器件、有机电致发光器件和触控层的具体结构示意图。
一并参照图1和图2，开关器件200A包括：缓冲层210、有源层220、栅极绝缘层230、栅极240、层间电介质(ILD)层250、源极260、漏极270和第二平坦层(PLN)280。
缓冲层210设置于基板100上。这里，作为本发明的另一实施方式，缓冲层210可以被省去。
有源层220设置于缓冲层210上。需要说明的是，当缓冲层210被省去之后，有源层220可以直接设置于基板100上。有源层220的材料可以为非晶硅或低温多晶硅或碳纳米管或石墨烯或金属氧化物半导体。
栅极绝缘层230设置于有源层220上。栅极240设置于栅极绝缘层230上。层间电介质层250设置于缓冲层210上，并且层间电介质层250覆盖有源层220、栅极绝缘层230和栅极240。需要说明的是，当缓冲层210被省去之后，层间电介质层250可以直接设置于基板100上，并且层间电介质层250覆盖有源层220、栅极绝缘层230和栅极240。
进一步地，层间电介质层250上被蚀刻出第一过孔251，该第一过孔251能够暴露出有源层220。
源极260和漏极270设置于层间电介质层250上，并且源极260和漏极270通过各自对应的第一过孔251分别与暴露的有源层220接触。
第二平坦层280设置于层间电介质层250上，并且第二平坦层280覆盖源极260和漏极270。进一步地，第二平坦层280上被蚀刻出第二过孔281，该第二过孔281暴露出漏极270。
有机电致发光器件300A包括：底电极310、像素限定层(PDL)320、有机发光层组330和顶电极340。
底电极310设置于第二平坦层280，并且底电极310通过第二过孔281与暴露的漏极270接触。底电极310最通常被设置为阳极。底电极310也是反光镜。当通过基板100观察有机发光层组330发光时，底电极310可以由反射性金属制成，并且应该足够薄以便在发射光的波长下具有部分透光率，这被称为是半透明的，或者底电极310可以由透明的金属氧化物制成，诸如氧化铟锡或 氧化锌锡等。当通过顶电极340观察有机发光层组330发光时，底电极310可以由反射性金属制成，并且应该足够厚，以使其基本上是不透光的且是全反光镜。
像素限定层320设置于第二平坦层280上，并且像素限定层320覆盖底电极310。进一步地，像素限定层320上被蚀刻出第三过孔321，该第三过孔321暴露出底电极310。
有机发光层组330设置于暴露出的底电极310上。顶电极340设置于有机发光层组330上。第一平坦层400设置于像素限定层320上，并且第一平坦层400覆盖顶电极340。
顶电极340最通常被设置为阴极。顶电极340也是反光镜。当通过顶电极340观察有机发光层组330发光时，顶电极340可以由反射性金属制成，并且应该足够薄以便在发射光的波长下具有部分透光率，这被称为是半透明的，或者顶电极340可以由透明的金属氧化物制成，诸如氧化铟锡或氧化锌锡等。当通过基板100观察有机发光层组330发光时，顶电极340可以由反射性金属制成，并且应该足够厚，以使其基本上是不透光的且是全反光镜。
作为本发明的一实施方式，有机发光层组330从底电极310到顶电极340顺序包括：空穴注入层(HIL)、空穴传输层(HTL)、发光层(EML)、电子传输层(ETL)以及电子注入层(EIL)，但本发明并不限制于此。其中，这些层结构可使用适当的材料制成，在此不再赘述。
触控层500包括：第一绝缘层510、触控电极层520和第二绝缘层530。这里，第一绝缘层510覆盖第一平坦层400；触控电极层520覆盖第一绝缘层510；第二绝缘层530覆盖触控电极层520。
图3是根据本发明的实施例的有机电致发光显示装置的制作方法的流程图。
参照图1至图3，根据本发明的实施例的有机电致发光显示装置的制作方法包括步骤：
S310：提供一基板100；
S320：在基板100上制作形成阵列排布的多个开关器件200A，以形成开关层200；
S330：在开关层200上制作形成阵列排布的多个有机电致发光器件300A，以形成有机电致发光层300；其中，每个有机电致发光器件300A由对应的一个开关器件200A控制发光；
S340：在基板100上制作形成直接覆盖开关层200和有机电致发光层300的第一平坦层400；
S350：在基板100上制作形成直接覆盖第一平坦层400的触控层500。
综上所述，根据本发明的实施例的有机电致发光显示装置及其制作方法，利用第一平坦层400直接封装开关层200和有机电致发光层300，而无需额外使用薄膜封装(Thin Film Encapsulation，TFE)层，在节省成本的同时能够减小产品的厚度。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (12)

  1. 一种有机电致发光显示装置，其中，包括：
    基板；
    开关层，设置于所述基板上，所述开关层包括阵列排布的多个开关器件；
    有机电致发光层，设置于所述开关层上，所述有机电致发光层包括阵列排布的多个有机电致发光器件，所述有机电致发光器件由对应的所述开关器件控制发光；
    第一平坦层，设置于所述基板上且覆盖所述开关层和所述有机电致发光层；
    触控层，设置于所述基板上且覆盖所述第一平坦层。
  2. 根据权利要求1所述的有机电致发光显示装置，其中，所述开关器件包括：
    有源层，设置于所述基板上；
    栅极绝缘层，设置于所述有源层上；
    栅极，设置于所述栅极绝缘层上；
    层间电介质层，设置于所述基板上且覆盖所述有源层、所述栅极绝缘层和所述栅极，所述层间电介质层上具有第一过孔，所述第一过孔暴露所述有源层；
    源极和漏极，设置于所述层间电介质层上，所述源极和所述漏极通过所述第一过孔分别与暴露的所述有源层接触；
    第二平坦层，设置于所述层间电介质层上且覆盖所述源极和所述漏极，所述第二平坦层上具有第二过孔，所述第二过孔暴露所述漏极。
  3. 根据权利要求2所述的有机电致发光显示装置，其中，所述开关器件 还包括：缓冲层，设置于所述有源层和所述基板之间以及所述层间电介质层和所述基板之间。
  4. 根据权利要求2所述的有机电致发光显示装置，其中，所述有源层的材料为非晶硅或低温多晶硅或碳纳米管或石墨烯或金属氧化物半导体。
  5. 根据权利要求3所述的有机电致发光显示装置，其中，所述有源层的材料为非晶硅或低温多晶硅或碳纳米管或石墨烯或金属氧化物半导体。
  6. 根据权利要求2所述的有机电致发光显示装置，其中，所述有机电致发光器件包括：
    底电极，设置于所述第二平坦层，所述底电极通过所述第二过孔与暴露的所述漏极接触；
    像素限定层，设置于所述第二平坦层上且覆盖所述底电极，所述像素限定层上具有第三过孔，所述第三过孔暴露出所述底电极；
    有机发光层组，设置于暴露出的所述底电极上；
    顶电极，设置于所述有机发光层组上；
    其中，所述第一平坦层设置于所述像素限定层上且覆盖所述顶电极。
  7. 根据权利要求6所述的有机电致发光显示装置，其中，所述有机发光层组从所述底电极到所述顶电极顺序包括：空穴注入层、空穴传输层、发光层、电子传输层以及电子注入层。
  8. 根据权利要求1所述的有机电致发光显示装置，其中，所述触控层包括：
    第一绝缘层，设置于所述基板上且覆盖所述第一平坦层；
    触控电极层，设置于所述第一绝缘层上；
    第二绝缘层，设置于所述触控电极层上。
  9. 根据权利要求1所述的有机电致发光显示装置，其中，所述基板为柔 性基板。
  10. 根据权利要求1所述的有机电致发光显示装置，其中，所述基板是透明的或半透明的或不透明的。
  11. 根据权利要求9所述的有机电致发光显示装置，其中，所述基板是透明的或半透明的或不透明的。
  12. 一种权利要求1所述的有机电致发光显示装置的制作方法，其中，所述制作方法包括：
    提供一基板；
    在所述基板上制作形成阵列排布的多个开关器件，以形成开关层；
    在所述开关层上制作形成阵列排布的多个有机电致发光器件，以形成有机电致发光层；所述有机电致发光器件由对应的所述开关器件控制发光；
    在所述基板上制作形成直接覆盖所述开关层和所述有机电致发光层的第一平坦层；
    在所述基板上制作形成直接覆盖所述第一平坦层的触控层。
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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CN105810716A (zh) * 2016-04-01 2016-07-27 友达光电股份有限公司 柔性显示装置及制备方法
CN106249975A (zh) * 2016-08-12 2016-12-21 京东方科技集团股份有限公司 一种触控屏、显示装置及触控屏的制作方法

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KR20110024531A (ko) * 2009-09-02 2011-03-09 삼성모바일디스플레이주식회사 유기 발광 디스플레이 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104636021A (zh) * 2015-02-02 2015-05-20 京东方科技集团股份有限公司 曲面显示面板及显示装置
CN105810716A (zh) * 2016-04-01 2016-07-27 友达光电股份有限公司 柔性显示装置及制备方法
CN106249975A (zh) * 2016-08-12 2016-12-21 京东方科技集团股份有限公司 一种触控屏、显示装置及触控屏的制作方法

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