WO2018146120A1 - Matériau nanométrique semi-conducteur - Google Patents

Matériau nanométrique semi-conducteur Download PDF

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Publication number
WO2018146120A1
WO2018146120A1 PCT/EP2018/053009 EP2018053009W WO2018146120A1 WO 2018146120 A1 WO2018146120 A1 WO 2018146120A1 EP 2018053009 W EP2018053009 W EP 2018053009W WO 2018146120 A1 WO2018146120 A1 WO 2018146120A1
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Prior art keywords
semiconductor
lll
nanosized
ligand
range
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PCT/EP2018/053009
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English (en)
Inventor
David MOCATTA
Amir Holtzman
Nina LIDICH
Yael NISENHOLZ
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Merck Patent Gmbh
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Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Priority to KR1020197026154A priority Critical patent/KR20190117586A/ko
Priority to US16/485,012 priority patent/US20190382656A1/en
Priority to EP18702718.0A priority patent/EP3580301A1/fr
Priority to CN201880010816.9A priority patent/CN110352229A/zh
Priority to JP2019543274A priority patent/JP2020511381A/ja
Publication of WO2018146120A1 publication Critical patent/WO2018146120A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/082—Other phosphides of boron, aluminium, gallium or indium
    • C01B25/087—Other phosphides of boron, aluminium, gallium or indium of gallium or indium

Definitions

  • the present invention relates to a method for synthesizing lll-V
  • semiconductor light emitting nanosized material a composition comprising a semiconductor light emitting nanosized material, an optical medium comprising a semiconductor light emitting nanosized material, and an optical device comprising an optical medium.
  • tris(trimethylsilyl)phosphine over which there is control of the particle size over a larger range such that green and / or red l ll-V semiconductor nanosized materials with improved size distribution can be produced, is desired.
  • a novel semiconductor light emitting nanosized material which can emit light with better Full Width at Half Maximum (FWHM), is requested.
  • a novel semiconductor light emitting nanosized material which can show improved quantum yield, is desired.
  • An optical display device whose optically active component is a semiconductor light emitting nanosized material, that gives an improved color purity and color gamut, is requested.
  • the inventor aimed to solve one or more of the above-mentioned problems 1 to 6.
  • step (b) adjusting or keeping the temperature of the reaction mixture obtained in step (a) in the range from 250 °C to 500 ⁇ , with p referably being of the temperature in the range from 280 °C to 450 ⁇ , mor e preferably it is from 300 ⁇ to 400 , further more preferably from 320 ⁇ to 380 to allow a creation and growth of a lll-V semiconductor nanosized material in the mixture.
  • the present invention relates to a lll-V semiconductor nanosized material obtainable or obtained from the method.
  • the present invention further relates to a plurality of lll-V semiconductor nanosized materials with the diameter standard deviation 13% or less, with preferably being of the diameter standard deviation in the range from 10 % or less, more preferably it is from 10% to 1 %, even more preferably, from 10% to 5%.
  • the present invention furthermore relates to a
  • semiconductor light emitting nanosized material comprising the lll-V semiconductor nanosized material and a shell layer, preferably the shell layer consists of single shell layer, double shell layers or multi shell layers.
  • the present invention also relates to a composition
  • a composition comprising the semiconductor light emitting nanosized material, and at least one other material selected from the group consisting of organic light emitting materials, inorganic light emitting materials, charge transporting materials, scattering particles, and matrix materials.
  • the present invention further relates to formulation comprising the semiconductor light emitting material or the composition, and a solvent.
  • the present invention relates to an optical medium comprsing the semiconductor light emitting nanosized material. In another aspect, the present invention relates to an optical deivce comprising the optical medium.
  • Fig.1 shows histogram of the relative size distribution of semiconductor nanosized materials obtained in working example 1 .
  • said method for a synthesizing lll-V semiconductor nanosized material comprises following steps,
  • step (a) providing either a lll-V semiconductor nanosized cluster and a first ligand at the same time or each separately, or a lll-V semiconductor nanosized cluster comprising a second ligand wherein the content of said second ligand is in the range from 40% to 80% by weight, more preferably in the range from 50% to 70% by weight, even more preferably from 55% to 65% by weight with respect to the total weight of the lll-V semiconductor nanosized cluster, to an another compound or to an another mixture of compounds, in order to get a reaction mixture, (b) adjusting or keeping the temperature of the reaction mixture obtained in step (a) in the range from 250 °C to 500 ⁇ , with p referably being of the temperature in the range from 280 °C to 450 ⁇ , mor e preferably it is from 300 ⁇ to 400 , further more preferably from 320 ⁇ to 380 to allow a creation and growth of a lll-V semiconductor nanosized material in the mixture.
  • cooling rate in step (c) is in the range from 130 ° C/s to 5 ° C/s, preferably it is from 120 ° C/s to 10 ° C/s, more preferably it is from 1 10 ° C/s to 50 ° C/s, even more preferably it is from 100 ° C/s to 70 ° C/s.
  • I I l-V semiconductor means a semiconductor material mainly consisting of one or more of group 13 elements of the periodic table and one or more of group 15 elements of the periodictable.
  • the term "cluster” means a group of atoms or molecules.
  • ligand means an ion or molecule that binds to a central metal atom to form a coordination complex or to a metal atom or cation on the surface of quantum materials. Some ligands may aslo bind to anions on the surface of the quantum materials.
  • the first ligand, the second ligand and the third ligand are, independently or dependency of each other, selected from one or more members of the group consisting of carboxylic acids, metal carboxylate ligands, phosphines, phosphonic acids, metal-phosphonates, amines, quaternary ammonium carboxylate salts, metal phosphonates and metal halides, with preferably being of myristic acid, lauric acid, stearate, oleate, myristate, laurate, phenyl acetate indium myristate, or indium acetate.
  • carboxylic acids include but are not limited to: hexanoic acid, heptanoic acid, octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tridecanoic acid, tetradecanoic acid, pentadecanoic acid, hexadecanoic acid, heptadecanoic acid, octadecanoic acid, nonadecanoic acid, icosanoic acid, with preferably being of myristic acid, lauric acid, stearic acid, oleic acid, phenyl acetic acid.
  • Metal carboxylate ligands where the metal is preferably group III or II metal atom of the periodic table. More preferably, it is indium, gallium, or zinc. Furthermore, preferably it is Indium or zinc. Moreover, where the carboxylate group includes but is not limited to hexanoate, heptanoate, octanoate, nonanoate, decanoate, undecanoate,
  • dodecanoate tridecanoate, tetradecanoate, pentadecanoate,
  • hexadecanoate hexadecanoate, heptadecanoate, octadecanoate, nonadecanoate, icosanoate and oleate.
  • Amines such as hexylamine, heptylamine, octylamine, nonylamine, decylamine, undecylamine, dodecylamine, tridecylamine, tetradcylamine, pentadecylamine, hexadecylamine, heptadecylamine, octadecylamine, oleylamine, di-hexylamine, di- heptylamine, di-octylamine, di-nonylamine, di-decylamine, di- undecylamine, di-dodecylamine, di-tridecylamine, di-tetradcylamine, di- pentadecylamine, di-hexadecylamine, di-heptadecylamine, di- octadecylamine, tri-hexylamine, tri-heptylamine
  • Phosphines such as tri-octylphosphine, tri- butylphosphine; Phosphonates-octadecylphosphonate,
  • phenylphosponate Preferably being indium octadecylphosponate
  • tetrabutylammonium myristate or tetrabutylammonium carboxylate where the carboxylate is any of, but not limited to, the following; hexanoate, heptanoate, octanoate, nonanoate, decanoate, undecanoate,
  • dodecanoate tridecanoate, tetradecanoate, pentadecanoate,
  • hexadecanoate heptadecanoate, octadecanoate, nonadecanoate, icosanoate and oleate.
  • tetrabutylammonium myristate and myristate Preferably tetraoctylammonium myristate.
  • the first, second and third ligands can be same.
  • alkyl chain lengths of said phosphonates, carboxylic acids, carboxylate anions, amines and quaternary ammonium salts can be C1 to C18, and the chain can be linear or branched. More preferably, the first ligand, the second ligand and the third ligand are selected from myristic acid, or indium-myristate or a combination of myristic acid and indium-myristate.
  • step (a) a plurality of the first ligands, the second ligands and / or a plurality of the third ligands are provided.
  • said another compound is a solvent.
  • said another compound is a solvent having the boiling point 250 °C or more, with preferably being of the boiling point in the range from 250 °C to 500 ° C, more preferably it is in the range from 300 ⁇ to 480 , even more preferab ly from 350 ⁇ to 450 ⁇ , further more preferably it is from 370 to 430 ⁇ .
  • said another compound is a solvent selected from one or more members of the group consisting of squalenes, squalanes, heptadecanes, octadecanes, octadecenes, nonadecanes, icosanes, henicosanes, docosanes, tricosanes,
  • pentatriacontane, hexatriacontane, oleylamine, and trioctylamine more preferably squalane, pentacosane, hexacosane, octacosane, nonacosane, or triacontane, even more preferably squalane, pentacosane, or
  • alkyl chain lengths of said solvent can be C1 to C30, and the chain can be linear or branched.
  • said another mixture of compounds can be a mixture of said solvents, a mixture of one or more of said solvent and one or more of the first ligands, a mixture of one or more of said solvent and one or more of said lll-V semiconductor nanosized clusters, or a mixture of one or more of said solvent, one or more of said ligands and one or more of said lll-V semiconductor nanosized clusters.
  • the total amount of the ligand added in step (a) is in the range from 0.2 to 50 % by weight, with preferably being of 0.3 to 50 % by weight, more preferably, 1 -50% by weight, even more preferably, from 1 to 25% by weight, further more preferably it is from 5-25% by weight with respect to total weight of the reaction mixture.
  • the l ll-V semiconductor nanosized cluster which is provided with the first ligand in step (a), comprises a third ligand wherein the content of said third ligand is in the range from 40% to 80% by weight, more preferably in the range from 50% to 70% by weight, even more preferably from 55% to 65% by weight with respect to the total weight of the lll-V semiconductor nanosized cluster. If you apply the core cleaning process disclosed in the section of " Core cleaning process " , the content of said second and third ligand can be adjusted.
  • the temperature of the mixture in step (b) is kept for from 1 second to 15 minutes with being more preferably from 1 second to 14 minutes, even more preferably, from 10 seconds to 12 minutes, further more preferably, from 10 seconds to 10 minutes, even more preferably, from 10 seconds to 5 minutes, the most preferably, from 10 seconds to 120 seconds.
  • the total amount of the inorganic part of said lll-V semiconductor nanosized clusters can be in the range from 0.1 x10 "4 to 1 x10 "3 mol%, with preferably being of the amount in the range from 0.5x10 "4 to 5x10 "4 mol%, more preferably from 1 x10 "4 to 3x10 "4 mol% of the reaction mixture.
  • the total amount of the inorganic part of said lll-V semiconductor nanosized clusters can be in the range from 0.1 x10 "4 to 1 x10 "3 molar, with preferably being of the amount in the range from 0.5x10 "4 to 5x10 "4 molar, more preferably from 1 x10 "4 to 3x10 "4 molar, with respect to 1 molar of the reaction mixture.
  • injection process of the ligands and the lll-V semiconductor nanosized clusters to said mixture can be vary.
  • the ligands and the lll-V semiconductor nanosized clusters can be provided directly into said mixture at the same time in step (a),
  • the first ligand and the lll-V semiconductor nanosized cluster are provided to the another compound or to the another mixture of compounds at the same time in step (a).
  • said step (a) comprises following steps (a1 ) and (a2),
  • step (a2) mixing the first mixture obtained in step (a1 ) with an another compound or with an another mixture at the temperature in the range between from 250 °C to 500 °C, with preferably bein g of the temperature in the range from 280 ⁇ to 450 , more preferably it is from 300 ⁇ to 400 °C, further more preferably from 320 ⁇ to 380°C in order to get the reaction mixture.
  • the ligand and the lll-V semiconductor nanosized cluster are provided into said another compound or into said another mixture separately in step (a), and the step (a) comprises following steps (a3) and (a4). (a3) providing the first ligand into said another compound or into said another mixture of compounds,
  • step (a4) providing the lll-V semiconductor nanosized cluster into said another compound or into said another mixture of compounds in order to get the reaction mixture.
  • the ligand and the lll-V semiconductor nanosized cluster are provided into said another compound or into said another mixture separately in step (a), and the step (a) comprises following steps (a3) and (a4) in this sequence.
  • the ligand and the lll-V semiconductor nanosized cluster are provided into said another compound or into said another mixture separately in step (a), and the step (a) comprises following steps (a4) and (a3) in this sequence.
  • said steps (a3) and / or (a4) can be repeated.
  • said lll-V semiconductor nanosized cluster is a lll-V magic sized cluster selected from the group consisting of InP, InAs, InSb, GaP, GaAs, and GaSb, InGaP, InPAs, InPZn magic sized clusters, with preferably being of InP magic sized cluster, more preferably, it is ln37P2oR 1 5i .
  • the term "magic sized clusters" means nanosized clusters which potential energy is lower than another nanosized clusters as described in J. Am. Chem. Soc.2016, 138, 1510-1513, Chem. Mater.2015, 27, 1432-1441 , Xie, R. et al., J. Am. Chem.Soc, 2009, 131 (42), pp 15457-1546.
  • said R 1 of said ln37P2oR 1 5i is -02CCH2Phenyl, a substituted or unsubstituted fatty acid such as hexanoate, heptanoate, octanoate, nonanoate, decanoate, undecanoate, dodecanoate, tridecanoate, tetradecanoate, pentadecanoate, hexadecanoate, heptadecanoate, octadecanoate, nonadecanoate, icosanoate or oleate.
  • a substituted or unsubstituted fatty acid such as hexanoate, heptanoate, octanoate, nonanoate, decanoate, undecanoate, dodecanoate, tridecanoate, tetradecanoate, pentadecanoate, hexadecanoate, heptadecan
  • said fatty acid can be branched or straight.
  • said ln37P2oR 1 5i is ln37P2o(02CR 2 )si selected from the group consisting of lri37P2o(02CCH2Phenyl)5i, lri37P2o(02C6Hii)5i, ln37P20(O 2 C7Hl3)51, ⁇ 37 ⁇ 2 ⁇ ( ⁇ 2 ⁇ 5)51, ln37P20(O 2 C9Hl7)51,
  • Said lll-V semiconductor nanosized clusters can be obtained with known method described for example in Dylan C Gary, J.Am. Chem. Soc 2016, 138, 1510-1513, D. Gary et al. , Chem. Mater.2015, 27, 1432-1441.
  • a plurality of lll-V semiconductor nanosized clusters are provided in step (a).
  • said lll-V semiconductor nanosized cluster comprises a ligand selected from the group consisting of carboxylates, such as, but not limited to, myristate, phenyl acetate laurate, oleate, stearate hexanoate, heptanoate, octanoate, nonanoate,
  • phenylphosponate More preferably myristate, stearate, laurate and oleic acid.
  • said lll-V said lll-V
  • semiconductor nanosized cluster comprises a ligand selected from the group consisting of carboxylates, amines, phosphines, and phosphonates, with being more preferably carboxylates or amines.
  • said lll-V said lll-V
  • semiconductor nanosized cluster comprises a ligand selected from the group consisting of carboxylates which include but are not limited to hexanoate, heptanoate, octanoate, nonanoate, decanoate, undecanoate, dodecanoate, tridecanoate, tetradecanoate, pentadecanoate,
  • said lll-V semiconductor nanosized materials with the diameter standard deviation 13% or less, with preferably being of the diameter standard deviation in the range from 10 % or less, more preferably it is from 10% to 1 %, even more preferably, from 10% to 5%.
  • the present invention also relates to a lll-V
  • step (a) providing either a lll-V semiconductor nanosized cluster and a first ligand at the same time or each separately, or a lll-V semiconductor nanosized cluster comprising a second ligand wherein the content of said second ligand is in the range from 40% to 80% by weight, more preferably in the range from 50% to 70% by weight, even more preferably from 55% to 65% by weight with respect to the total weight of the lll-V semiconductor nanosized cluster, to an another compound or to an another mixture of compounds, in order to get a reaction mixture, (b) adjusting or keeping the temperature of the reaction mixture obtained in step (a) in the range from 250 °C to 500 ⁇ , with p referably being of the temperature in the range from 280 °C to 450 ⁇ , mor e preferably it is from 300 ⁇ to 400 , further more preferably from 320 ⁇ to 380 to allow a creation and growth of a lll-V semiconductor nanosized material in the mixture.
  • cooling rate in step (c) is in the range from 130 ° C/s to 5 ° C/s, preferably it is from 120 ° C/s to 10 ° C/s, more preferably it is from 1 10 ° C/s to 50 ° C/s, even more preferably it is from 100 ° C/s to 70 ° C/s.
  • the value of the ratio of the exciton absorption peak (hereto referred to as the "ODMax”) and the minimum following it on the blue side of the absorption spectra measured in a spectrometer, Shimadzu UV-1800, (hereto referred to as the "ODMin”) from now on referred to as the ODMax/ ODMin ratio, of said semiconductor nanosized material preferably it is said semiconductor nanosized material for a semiconductor green light emitting nanosized material, based on absorption spectra between 460 nm and 630 nm measured in a
  • spectrometer is > 1 .4 preferably is > 1 .6, more preferably >1 .7, even more preferably >1 .8.
  • the value of the ratio of the exciton absorption peak and the exciton absorption minimum of said semiconductor nanosized material is 1 .4 or more, preferably is 1 .6 or more, more preferably 1 .7 or more, even more preferably 1 .8 or more.
  • the value of the ratio of the exciton absorption peak and the exciton absorption minimum of said semiconductor nanosized material is preferably is in the range from 1 .6 to 2.0.
  • the present invention further relates to a plurality of lll-V semiconductor nanosized materials with the diameter standard deviation 13% or less, with preferably being of the diameter standard deviation in the range from 10 % or less, more preferably it is from 10% to 1 %, even more preferably, from 10% to 5%.
  • the average size of the overall structures of the lll-V semiconductor nanosized material is in the range from 0.5 nm to 50 nm. More preferably it is from 1 .1 nm to 10 nm, even more preferably, it is from 1 .3 nm to 5 nm from the viewpoint of desired quantum size effect.
  • TEM Transmission Electron Microscopy
  • the diameter standard deviation is a corrected diameter standard deviation represented by following formula.
  • x is the mean of the samples
  • ⁇ means a (sample) diameter standard deviation
  • n is a total number of the samples.
  • the relative standard deviation (RSD) is:
  • the present invention furthermore relates to
  • semiconductor light emitting nanosized material comprising the Ill-V semiconductor nanosized material and a shell layer, preferably the shell layer consists of single shell layer, double shell layers or multi shell layers.
  • said semiconductor light emitting nanosized material emits green light.
  • the Full Width at Half Maximum (FWHM) value of said semiconductor light emitting nanosized material preferably it is green light emitting semiconductor light emitting nanosized material based on light emission spectra between 460 nm and 630 nm measured in a spectrometer, is ⁇ 40 nm, preferably is ⁇ 37 nm, more preferably in the range from 37 nm to 30 nm, more preferably ⁇ 35 nm, even more preferably ⁇ 32 nm, further more preferably ⁇ 30 nm.
  • a type of shape of the core of the nanosized light emitting material, and shape of the nanosized light emitting material to be synthesized are not particularly limited.
  • spherical shaped, elongated shaped, star shaped, polyhedron shaped, pyramidal shaped, tetrapod shaped, tetrahedron shaped, platelet shaped, cone shaped, and irregular shaped nanosized light emitting materials can be synthesized.
  • the semiconductor light emitting nanosized material comprises a core / shell structure.
  • core / shell structure means the structure having a core part and at least one shell part covering fully or partially the said core. Preferably, said shell part fully covers said core.
  • core and shell are well known in the art and typically used in the field of quantum materials.
  • said core / shell structure can be core / one shell layer structure, core / double shells structure or core / multishells structure.
  • multishells stands for the stacked shell layers consisting of three or more shell layers. Each stacked shell layers of double shells and / or multishells can be made from same or different materials. ln some embodiments of the present invention, said shell comprises group 12 and group 1 6 elements of the periodic table.
  • it is selected from InP/ZnS, InP/ZnSe, InP/ZnS/ZnSe, InP/ZnSe/ZnS, InP/ZnSeS, InP/ZnSeS/ZnS, InAs/ZnS, InAs/ZnSe,
  • InPZnS/ZnSeS/ZnS InPAs/ZnS, InPAs/ZnSe, InPAs/ZnS/ZnSe,
  • InPAs/ZnSe/ZnS with even more preferably being of InP/ZnS, InP/ZnSe, InP/ZnS/ZnSe, InP/ZnSe/ZnS, InAs/ZnS, InAs/ZnSe, InAs/ZnS/ZnSe, InAs/ZnSe/ZnS
  • a type of shape of the core and a type of lattice of the core are not particularly limited.
  • spherical shaped, elongated shaped, star shaped, polyhedron shaped, pyramidal shaped, tetrapod shaped, tetrahedron shaped, platelet shaped, cone shaped, and irregular shaped core materials, a core having Zinc Blende lattice, or a poly-lattice of Zinc Blende and Wurtzite can be used.
  • a cation precursor for shell layer coating known cation precursor for shell layer synthesis comprising group 12 element of the periodic table or 13 element of the periodic table can be used.
  • Zn oleate can be used as a cation precursor for ZnSe or ZnS shell layer coating.
  • anion precursor for shell layer coating known anion precursor for shell layer synthesis comprising a group 1 6 element of the periodic table or a group 1 5 element of the periodic table can be used.
  • an anion precursor for shell layer coating can be selected from one or more members of the group consisting of Se anion: Se, Se- trioctylphopshine, Se- tributylphosphine, Se-oleylamine complex,
  • said anion and cation precursors for shell layer synthesis are added alternately during the synthesis, while the temperature of the solution in the synthesis increases from 180°C and finishing at 320°C.
  • the shell layer thickness of the nanosized light emitting material obtained in step (c) can be 0.8 nm or more. Preferably, it is in the range from 0.8 nm to 10 nm. In a preferred embodiment, it is in the range from 1 nm to 4 nm. More preferably, it is in the range from 1 .5 nm to 3 nm, where a thicker shell is required for applications. In some embodiments of the present invention, the total shell layer thickness of the nanosized light emitting material can be in the range from 0.3 nm to 0.8 nm from the viewpoint of better energy transfer from the shell layer to said core. By changing reaction time, total amount of precursors, the thickness of the shell layer can be controlled. Shell coating step can be performed like described in US 8679543 B2 and Chem. Mater. 2015, 27, pp 4893-4898.
  • the semiconductor light emitting nanosized material comprises surface ligands.
  • the surface of the outermost shell layer of the semiconductor light emitting nanosized material can be over coated with one or more kinds of surface ligands.
  • the surface ligands are attached onto the outermost surface of the shell layers.
  • the surface ligands in common use include phosphines and phosphine oxides such as Trioctylphosphine oxide (TOPO), Trioctylphosphine (TOP), and Tributylphosphine (TBP); phosphonic acids such as
  • Dodecylphosphonic acid DDPA
  • Tridecylphosphonic acid TDPA
  • Octadecylphosphonic acid ODPA
  • Hexylphosphonic acid HPA
  • amines such as Oleylamine, Dedecyl amine (DDA), Tetradecyl amine (TDA), Hexadecyl amine (HDA), and Octadecyl amine (ODA), Oleylamine (OLA), thiols such as hexadecane thiol and hexane thiol
  • mercapto carboxylic acids such as mercapto propionic acid and
  • mercaptoundecanoicacid carboxylic acids such as oleic acid, stearic acid, myristic acid; acetic acid, zinc carboxylates such as zinc oleate and a combination of any of these. And also.
  • Polyethylenimine (PEI) also can be used preferably. Examples of surface ligands have been described in, for example, the laid- open international patent application No. WO 2012/059931 A. In some embodiments of the present invention, known core cleaning process can be applied before said shell coating.
  • step (c) by mixing the obtained solution from step (c) and a cleaning solution of the present invention, unreacted core precursors and ligands in said solution from step (a) can be removed.
  • the cleaning solution for step (d) comprises one solution selected from one or more members of the group consisting of ketones, such as, methyl ethyl ketone, acetone, methyl amyl ketone, methyl isobutyl ketone, and cyclohexanone; alcohols, such as, methanol, ethanol, propanol, butanol, hexanol, cyclo hexanol, ethylene glycol; hexane; chloroform; acetonitrile; xylene and toluene.
  • ketones such as, methyl ethyl ketone, acetone, methyl amyl ketone, methyl isobutyl ketone, and cyclohexanone
  • alcohols such as, methanol, ethanol, propanol, butanol, hexanol, cyclo hexanol, ethylene glycol; hexane; chloroform; ace
  • the cleaning solution is selected from one or more members of the group consisting of ketones, such as, methyl ethyl ketone, acetone, methyl amyl ketone, methyl isobutyl ketone, and cyclohexanone; alcohols, such as, methanol, ethanol, propanol, butanol, hexanol, cyclo hexanol, ethylene glycol; hexane;
  • ketones such as, methyl ethyl ketone, acetone, methyl amyl ketone, methyl isobutyl ketone, and cyclohexanone
  • alcohols such as, methanol, ethanol, propanol, butanol, hexanol, cyclo hexanol, ethylene glycol; hexane;
  • cleaning solution comprises one or more of alcohols is used.
  • the cleaning solution contains one or more of alcohols selected from the group consisting of acetonitrile, methanol, ethanol, propanol, butanol, and hexanol, and one more solution selected from xylene or toluene to remove unreacted core precursors from the solution obtained in step (c) and remove the ligands leftovers in the solution effectively.
  • alcohols selected from the group consisting of acetonitrile, methanol, ethanol, propanol, butanol, and hexanol
  • xylene or toluene to remove unreacted core precursors from the solution obtained in step (c) and remove the ligands leftovers in the solution effectively.
  • the cleaning solution contains one or more of alcohols selected from methanol, ethanol, propanol, and butanol, and toluene.
  • the mixing ratio of alcohols : toluene or xylene can be 1 :1 - 20:1 in a molar ratio.
  • the cleaning removes the extra ligands and the unreacted precursor.
  • the present invention also relates to a method for synthesizing a semiconductor light emitting nanosized material comprising a core / shell structure, wherein the method comprises following steps (x), (y) and (z) in this sequence.
  • said shell comprises group 12 and group 1 6 elements of the periodic table and / or group 13 and group 15 elements of the periodic table.
  • step (x) More details of the step (x) is described in the section of "Method for synthesizing lll-V semiconductor nanosized materials".
  • step (y) More details of step (y) is described in the section of "Core cleaning process".
  • the present invention also relates to a semiconductor light emitting nanosized material obtainable from said method of the present invention.
  • the present invention relates to a method for synthesizing
  • semiconductor light emitting nanosized material obtainable from the method comprising following steps (A), (B) and (C) in this sequence.
  • the present invention further relates to composition
  • composition comprising the semiconductor light emitting nanosized material according to the present invention, and at least one other material selected from the group consisting of organic light emitting materials, activators, inorganic fluorescent materials, charge transporting materials, scattering particles, and matrix materials.
  • said activator can be selected from the group consisting of Sc 3+ ,Y 3+ , La 3+ , Ce 3+ , Pr 3+ , Nd 3+ , Pm 3+ , Sm 3+ , Eu 3+ , Gd 3+ , Tb 3+ , Dy 3+ , Ho 3+ , Er 3+ , Tm 3+ , Yb 3+ , Lu 3+ , Bi 3+ , Pb 2+ , Mn 2+ , Yb 2+ , Sm 2+ , Eu 2+ , Dy 2+ , Ho 2+ and a combination of any of these, and said inorganic fluorescent material can be selected from the group consisting of sulfides, thiogallates, nitrides, oxynitrides, silicated, aluminates, apatites, borates, oxides, phosphates, halophosphates, sulfates, tungstenates, tantalates, vanadates, mo
  • Such suitable inorganic fluorescent materials described above can be well known phosphors including nanosized phosphors, quantum sized materials like mentioned in the phosphor handbook, 2 nd edition (CRC Press, 2006), pp. 155 - pp. 338 (W.M.Yen, S.Shionoya and H.Yamamoto), WO201 1 /147517A, WO2012/034625A, and WO2010/095140A.
  • charge transporting materials any type of publically known materials can be used preferably.
  • organic fluorescent materials organic host materials, organic dyes, organic electron transporting materials, organic metal complexes, organic hole transporting materials.
  • any type of publically known transparent matrix material described in for example, WO 201 6/134820A can be used.
  • small particles of inorganic oxides such as SiO 2 , SnO 2 , CuO, CoO, AI2O3 ⁇ 2, Fe 2 O 3 , Y2O3, ZnO, MgO;
  • organic particles such as polymerized polystyrene, polymerized PMMA; inorganic hollow oxides such as hollow silica or a combination of any of these; can be used preferably.
  • the present invention further relates to formulation comprising the semiconductor light emitting material or the composition, and at least solvent.
  • said solvent is one or more of publically known solvents, described in for example, WO 201 6/134820A.
  • the present invention further relates to an optical medium comprising a semiconductor light emitting nanosized material.
  • the optical medium can be an optical sheet, for example, a color filter, color conversion film, remote phosphor tape, or another film or filter.
  • the term "sheet” includes film and / or layer like structured mediums.
  • the invention further relates to an optical device comprising the optical medium.
  • the optical device can be a liquid crystal display device (LCD), Organic Light Emitting Diode (OLED), backlight unit for an optical display, Light Emitting Diode device (LED),
  • LCD liquid crystal display device
  • OLED Organic Light Emitting Diode
  • LED Light Emitting Diode device
  • Micro Electro Mechanical Systems here in after "MEMS"
  • electro wetting display or an electrophoretic display
  • lighting device and / or a solar cell.
  • step (b) adjusting or keeping the temperature of the reaction mixture obtained in step (a) in the range from 250 °C to 500 ⁇ , with p referably being of the temperature in the range from 280 °C to 450 ⁇ , mor e preferably it is from 300 ⁇ to 400 , further more preferably from 320 ⁇ to 380 to allow a creation and growth of a lll-V semiconductor nanosized material in the mixture.
  • step (a) The concentration of the ligand added in step (a) is larger than the concentration of the lll-V semiconductor nanosized cluster with respect of the total concentration of the reaction mixture obtained in step (a).
  • III- V semiconductor nanosized cluster which is provided with the first ligand in step (a), comprises a third ligand wherein the content of said third ligand is in the range from 40% to 80% by weight, more preferably in the range from 50% to 70% by weight, even more preferably from 55% to 65% by weight with respect to the total weight of the lll-V semiconductor nanosized cluster.
  • said first ligand is selected from one or more members of the group consisting of carboxylic acids, metal carboxylate ligands, phosphines, phosphonic acids, metal-phosphonates, amines, quaternary ammonium carboxylate salts, metal phosphonates and metal halides.
  • carboxylic acids metal carboxylate ligands, phosphines, phosphonic acids, metal-phosphonates, amines, quaternary ammonium carboxylate salts, metal phosphonates and metal halides.
  • preferably being of myristic acid, lauric acid, stearate, oleate, myristate, laurate, phenyl acetate indium myristate, or indium acetate.
  • said another compound is a solvent selected from one or more members of the group consisting of squalenes, squalanes, heptadecanes, octadecanes, octadecenes, nonadecanes, icosanes, henicosanes, docosanes, tricosanes, pentacosanes, hexacosanes, octacosanes, nonacosanes, triacontanes, hentriacontanes, dotriacontanes, tritriacontanes,
  • tetratriacontanes pentatriacontanes, hexatriacontanes, oleylamines, and trioctylamines, with preferably being of squalene, squalane, heptadecane, octadecane, octadecene, nonadecane, icosane, henicosane, docosane, tricosane, pentacosane, hexacosane, octacosane, nonacosane, triacontane, hentriacontane, dotriacontane, tritriacontane, tetratriacontane, pentatriacontane, hexatriacontane, oleylamine, and trioctylamine, more preferably squalane, pentacosane, hexa
  • step (a) is in the range from 0.2 to 50 % by weight, with preferably being of 0.3 to 50 % by weight, more preferably, 1 -50% by weight, even more preferably, from 1 to 25% by weight, further more preferably it is from 5-25% by weight with respect to total weight of the reaction mixture.
  • step (b) is kept in the temperature range for from 1 second to 15 minutes with being more preferably from 1 second to 14 minutes, even more preferably, from 10 seconds to 12 minutes, further more preferably, from 10 seconds to 10 minutes, even more preferably, from 10 seconds to 5 minutes, the most preferably, from 10 seconds to 120 seconds.
  • the total amount of the inorganic part of said lll-V semiconductor nanosized clusters can be in the range from 0.1 x10 "4 to 1 x10 "3 mol%, with preferably being of the amount in the range from 0.5x10 "4 to 5x10 "4 mol%, more preferably from 1 x10 "4 to 3x10 "4 mol% of the reaction mixture.
  • step (c) is in the range from 130 ° C/s to 5 ° C/s, preferably it is from 120 ° C/s to 10 ° C/s, more preferably it is from 1 10 ° C/s to 50 ° C/s, even more preferably it is from 100 ° C/s to 70 ° C/s.
  • step (a) The method according to any one of embodiments 1 to 1 1 , wherein the first ligand and the lll-V semiconductor nanosized cluster are provided to the another compound or to the another mixture of compounds at the same time in step (a).
  • step (a) comprises following steps (a1 ) and (a2), (a1 ) preparing a first mixture by mixing the first ligand and the lll-V semiconductor nanosized cluster with an another compound or with an another mixture of compounds, (a2) mixing the first mixture obtained in step (a1 ) with an another compound or with an another mixture at the temperature in the range between from 250 °C to 500 °C, with preferably bein g of the temperature in the range from 280 ⁇ to 450 , more preferably it is from 300 ⁇ to 400 °C, further more preferably from 320 ⁇ to 380°C in order to get the reaction mixture.
  • step (a) comprises following steps (a3) and (a4).
  • step (a) comprises following steps (a3) and (a4) in this sequence.
  • step (a) comprises following steps (a4) and (a3) in this sequence.
  • said l l l-V semiconductor nanosized cluster is a l l l-V magic sized cluster selected from the group consisting of InP, InAs, InSb, GaP, GaAs, and GaSb, InGaP, InPAs, InPZn, magic sized clusters, with preferably being InP magic sized cluster, more preferably, it is ln37P2o(02CR 1 )5i , wherein said R 1 of said ln37P2oR 1 5i is -02CCH2Phenyl, or a substituted or unsubstituted fatty acid such as hexanoate, heptanoate, octanoate, nonanoate, decanoate, undecanoate, dodecanoate, tridecanoate, tetradecanoate, pentadecanoate, hexadecanoate, heptadecan
  • said second ligand and said third ligand are, dependently or independently of each other, selected from one or more members of the group consisting of carboxylic acids, metal carboxylate ligands, phosphines, phosphonic acids, metal-phosphonates, amines, quaternary ammonium carboxylate salts, metal phosphonates and metal halides, with preferably being of myristic acid, lauric acid, stearate, oleate, myristate, laurate, phenyl acetate indium myristate, or indium acetate.
  • a lll-V semiconductor nanosized material obtainable or obtained from the method according to any one of embodiments 1 to 18.
  • 20. The lll-V semiconductor nanosized material according to embodiment 19, wherein the value of the ratio of the exciton absorption peak and the exciton absorption minimum of said semiconductor nanosized material, is 1 .4 or more, preferably is 1 .6 or more, more preferably 1 .7 or more, even more preferably 1 .8 or more.
  • the shell layer preferably the shell layer consists of single shell layer, double shell layers or multi shell layers.
  • a composition comprising the semiconductor light emitting nanosized material according to embodiment 22 or 23, and at least one other material selected from the group consisting of organic light emitting materials, inorganic light emitting materials, charge transporting materials, scattering particles, and matrix materials.
  • a formulation comprising the semiconductor light emitting nanosized material according to embodiment 22 or 23, or composition according to embodiment 24, and at least one solvent.
  • An optical medium comprising the semiconductor light emitting nanosized material according to embodiment 22 or 23.
  • the present invention provides:
  • tris(trimethylsilyl)phosphine over which there is control of the particle size over a larger range such that green and / or red ll l-V semiconductor nanosized materials with improved size distribution can be produced;
  • optical display device whose optically active component is a semiconductor light emitting nanosized material, that gives an improved color purity and color gamut.
  • semiconductor means a material that has electrical conductivity to a degree between that of a conductor (such as copper) and that of an insulator (such as glass) at room temperature.
  • a semiconductor is a material whose electrical conductivity increases with the temperature.
  • nanosized means the size in between 0.1 nm and 999 nm.
  • emission means the emission of electromagnetic waves by electron transitions in atoms and molecules.
  • inorganic means elements, which do not contain any carbon atom.
  • the term "quantum sized” means the size of the semiconducting material itself without ligands or another surface modification, which can show the quantum confinement effect, like described in, for example, ISBN:978-3-662-44822-9.
  • magic sized clusters means nanosized clusters which potential energy is lower than another nanosized clusters as described in J. Am. Chem. Soc. 201 6, 138, 1510-1513, Chem. Mater. 2015, 27, 1432-1441 , Xie, R. et al., J. Am. Chem.Soc, 2009, 131 (42), pp 15457-1546.
  • the example 1 and the working examples 1 to 2 below provide description of the present invention, as well as an in detail description of their fabrication.
  • Example 1 Fabrication of a nanosized light emitting material
  • the amount of the ligands is in the range from range from 1 -50% by weight of 2.5 ml of the solvent. Preferably, it is from 1 to 25% by weight, more preferably it is from 5-25% by weight with respect to total weight of the reaction mixture.
  • the solution with the ligands is heated up to the temperature in the range from 250 °C to 500 ⁇ , with preferably being of the temperature in the range from 280 ⁇ to 450 , more preferably it is from 300 ⁇ to 400 °C, further more preferably from 320 ⁇ to 380°C, t he most preferably, it is 350 ⁇ .
  • the temperature of said solution is kept in the range from 250 °C to 500 °C, with preferably being of the temperature in the range from 280 °C to 450 ⁇ , more preferably it is from 300 ⁇ to 400 ⁇ , further more
  • the solution is cooled rapidly either by adding room temperature solvent quickly or cooling flask that contains the solvent with a cooling bath to room temperature.
  • TEM Transmission Electron Microscope
  • the lll-V semiconductor nanosized materials obtained in the core synthesis are precipitated from solution by adding toluene and ethanol in a 1 :4 ratio. The solution is then centrifuged to precipitate the quantum dots. These dots are then redissolved in 1 -Octadecene (ODE) and heated up to180O for 20 min.
  • ODE 1 -Octadecene
  • the flask is cooled to room temperature. And a sample is taken from the flask for a TEM image observation.
  • the apparatus is evacuated with stirring and heated to 100 °C.
  • the flask is filled with argon, and a 20ml_ of dry toluene is added.
  • the apparatus is evacuated with stirring and heated to 375°C under argon.
  • the cleaned InP MSCs with a total weight of the ligand and the inorganic part of the InP MSCs is 10 mg, where around 60wt% is the ligand (4mg of solid part of the InP MSCs and 6 mg of myristate attached on to the InP MSCs).
  • This solution is then injected into the flask at 375 °C. After 40 seconds from the injection of the solution, the mantle is removed and the flask was quickly cooled down.
  • TEM Transmission Electron Microscope
  • Fig. 1 shows histogram of the relative size distribution of obtained semiconductor nanosized materials and Table 1 shows calculation results of average diameter, STDV, and relative STDV of obtained semiconductor nanosized materials.
  • Said relative STDV is STDV / Average diameter 00%.

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  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Luminescent Compositions (AREA)

Abstract

La présente invention concerne un procédé de synthèse d'un matériau semi-conducteur.
PCT/EP2018/053009 2017-02-10 2018-02-07 Matériau nanométrique semi-conducteur WO2018146120A1 (fr)

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US16/485,012 US20190382656A1 (en) 2017-02-10 2018-02-07 Semiconductor nanosized material
EP18702718.0A EP3580301A1 (fr) 2017-02-10 2018-02-07 Matériau nanométrique semi-conducteur
CN201880010816.9A CN110352229A (zh) 2017-02-10 2018-02-07 半导体纳米材料
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110317609A (zh) * 2019-08-06 2019-10-11 纳晶科技股份有限公司 量子点、其制备方法及光电器件
CN111514879A (zh) * 2020-05-11 2020-08-11 哈尔滨工业大学 一种铟基钒氧化物催化剂的合成方法及其应用
WO2020209579A1 (fr) * 2019-04-11 2020-10-15 덕산네오룩스 주식회사 Points quantiques à base d'éléments des groupes iii-v et procédé de fabrication associé
WO2020209581A1 (fr) * 2019-04-11 2020-10-15 덕산네오룩스 주식회사 Points quantiques de type iii-v et leur procédé de préparation
WO2020216265A1 (fr) * 2019-04-26 2020-10-29 纳晶科技股份有限公司 Points quantiques de groupe ii-iii-v-vi, leur procédé de préparation et dispositif optoélectronique à points quantiques
WO2021000892A1 (fr) * 2019-07-01 2021-01-07 浙江大学 Procédé pour préparer des points quantiques des groupes iii-v
CN112266791A (zh) * 2020-10-14 2021-01-26 苏州星烁纳米科技有限公司 一种量子点及其制备方法、量子点膜、显示装置
CN112912460A (zh) * 2018-10-15 2021-06-04 默克专利股份有限公司 纳米粒子
CN115028192A (zh) * 2022-04-14 2022-09-09 国科大杭州高等研究院 一种基于有机膦化物合成氧化铟半导体纳米晶的方法
CN116120930A (zh) * 2023-02-13 2023-05-16 合肥福纳科技有限公司 一种改善量子点尺寸均一性的制备方法和量子点

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100123155A1 (en) 2008-11-19 2010-05-20 Nanoco Technologies Limited Semiconductor nanoparticle-based light-emitting devices and associated materials and methods
WO2010095140A2 (fr) 2009-02-23 2010-08-26 Yissum Research Development Company Of The Hebrew University Of Jerusalem Dispositif d'affichage optique et son procédé
US7964278B2 (en) 2005-06-15 2011-06-21 Yissum Research Development Company Of The Hebrew University Of Jerusalem III-V semiconductor core-heteroshell nanocrystals
US20110223110A1 (en) * 2008-07-02 2011-09-15 Life Technologies Corporation Stable indium-containing semiconductor nanocrystals
WO2011147517A1 (fr) 2010-05-22 2011-12-01 Merck Patent Gmbh Substances luminescentes
WO2012034625A1 (fr) 2010-09-14 2012-03-22 Merck Patent Gmbh Substances luminescentes de silicophosphate
WO2012059931A1 (fr) 2010-11-05 2012-05-10 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Systèmes d'éclairage à polarisation
WO2016134820A1 (fr) 2015-02-27 2016-09-01 Merck Patent Gmbh Composition photosensible et film de conversion de couleur

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7964278B2 (en) 2005-06-15 2011-06-21 Yissum Research Development Company Of The Hebrew University Of Jerusalem III-V semiconductor core-heteroshell nanocrystals
US8343576B2 (en) 2005-06-15 2013-01-01 Yissum Research Development Company Of The Hebrew University Of Jerusalem III-V semiconductor core-heteroshell nanocrystals
US20110223110A1 (en) * 2008-07-02 2011-09-15 Life Technologies Corporation Stable indium-containing semiconductor nanocrystals
US8679543B2 (en) 2008-07-02 2014-03-25 Joseph Bartel Stable indium-containing semiconductor nanocrystals
US20100123155A1 (en) 2008-11-19 2010-05-20 Nanoco Technologies Limited Semiconductor nanoparticle-based light-emitting devices and associated materials and methods
WO2010095140A2 (fr) 2009-02-23 2010-08-26 Yissum Research Development Company Of The Hebrew University Of Jerusalem Dispositif d'affichage optique et son procédé
WO2011147517A1 (fr) 2010-05-22 2011-12-01 Merck Patent Gmbh Substances luminescentes
WO2012034625A1 (fr) 2010-09-14 2012-03-22 Merck Patent Gmbh Substances luminescentes de silicophosphate
WO2012059931A1 (fr) 2010-11-05 2012-05-10 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Systèmes d'éclairage à polarisation
WO2016134820A1 (fr) 2015-02-27 2016-09-01 Merck Patent Gmbh Composition photosensible et film de conversion de couleur

Non-Patent Citations (12)

* Cited by examiner, † Cited by third party
Title
CHEM. MATER., vol. 27, 2015, pages 1432 - 1441
CHEM. MATER., vol. 27, 2015, pages 4893 - 4898
D. GARY ET AL., CHEM. MATER., vol. 27, 2015, pages 1432 - 1441
DYLAN C GARY, J.AM. CHEM. SOC, vol. 138, 2016, pages 1510 - 1513
DYLAN C. GARY ET AL: "Two-Step Nucleation and Growth of InP Quantum Dots via Magic-Sized Cluster Intermediates", CHEMISTRY OF MATERIALS, vol. 27, no. 4, 10 February 2015 (2015-02-10), pages 1432 - 1441, XP055462428, ISSN: 0897-4756, DOI: 10.1021/acs.chemmater.5b00286 *
J. AM. CHEM. SOC., vol. 138, 2016, pages 1510 - 1513
L. LI; P. REISS, JACS, vol. 130, 2008, pages 1589
L. LI; P.REISS, JACS, vol. 130, 2008, pages 1589
M. TESSIER, CHEM. MATER., vol. 27, 2015, pages 4893
W.M.YEN; S.SHIONOYA; H.YAMAMOTO: "phosphor handbook", 2006, CRC PRESS
X.YANG ET AL., ADV. MATER., vol. 24, 2012, pages 4180
XIE, R. ET AL., J. AM. CHEM.SOC., vol. 131, no. 42, 2009, pages 15457 - 1546

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* Cited by examiner, † Cited by third party
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CN112912460A (zh) * 2018-10-15 2021-06-04 默克专利股份有限公司 纳米粒子
WO2020209581A1 (fr) * 2019-04-11 2020-10-15 덕산네오룩스 주식회사 Points quantiques de type iii-v et leur procédé de préparation
WO2020209579A1 (fr) * 2019-04-11 2020-10-15 덕산네오룩스 주식회사 Points quantiques à base d'éléments des groupes iii-v et procédé de fabrication associé
CN111849456B (zh) * 2019-04-26 2021-12-14 纳晶科技股份有限公司 一种ii-iii-v-vi族量子点及其制备方法
WO2020216265A1 (fr) * 2019-04-26 2020-10-29 纳晶科技股份有限公司 Points quantiques de groupe ii-iii-v-vi, leur procédé de préparation et dispositif optoélectronique à points quantiques
CN111849456A (zh) * 2019-04-26 2020-10-30 纳晶科技股份有限公司 一种ii-iii-v-vi族量子点及其制备方法
WO2021000892A1 (fr) * 2019-07-01 2021-01-07 浙江大学 Procédé pour préparer des points quantiques des groupes iii-v
CN110317609A (zh) * 2019-08-06 2019-10-11 纳晶科技股份有限公司 量子点、其制备方法及光电器件
CN111514879A (zh) * 2020-05-11 2020-08-11 哈尔滨工业大学 一种铟基钒氧化物催化剂的合成方法及其应用
CN111514879B (zh) * 2020-05-11 2022-07-01 哈尔滨工业大学 一种铟基钒氧化物催化剂的合成方法及其应用
CN112266791A (zh) * 2020-10-14 2021-01-26 苏州星烁纳米科技有限公司 一种量子点及其制备方法、量子点膜、显示装置
CN115028192A (zh) * 2022-04-14 2022-09-09 国科大杭州高等研究院 一种基于有机膦化物合成氧化铟半导体纳米晶的方法
CN115028192B (zh) * 2022-04-14 2024-01-23 国科大杭州高等研究院 一种基于有机膦化物合成氧化铟半导体纳米晶的方法
CN116120930A (zh) * 2023-02-13 2023-05-16 合肥福纳科技有限公司 一种改善量子点尺寸均一性的制备方法和量子点
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