WO2018145955A3 - Electrical contacting method and power module - Google Patents

Electrical contacting method and power module Download PDF

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Publication number
WO2018145955A3
WO2018145955A3 PCT/EP2018/052292 EP2018052292W WO2018145955A3 WO 2018145955 A3 WO2018145955 A3 WO 2018145955A3 EP 2018052292 W EP2018052292 W EP 2018052292W WO 2018145955 A3 WO2018145955 A3 WO 2018145955A3
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WO
WIPO (PCT)
Prior art keywords
contact
component
contact layer
power module
electrical contacting
Prior art date
Application number
PCT/EP2018/052292
Other languages
German (de)
French (fr)
Other versions
WO2018145955A2 (en
Inventor
Hubert Baueregger
Albrecht Donat
Michael Kaspar
Kai Kriegel
Gerhard Mitic
Markus Schwarz
Herbert Schwarzbauer
Stefan Stegmeier
Karl Weidner
Jörg ZAPF
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2018145955A2 publication Critical patent/WO2018145955A2/en
Publication of WO2018145955A3 publication Critical patent/WO2018145955A3/en

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    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32235—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a via metallisation of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83909—Post-treatment of the layer connector or bonding area
    • H01L2224/8392—Applying permanent coating, e.g. protective coating

Abstract

In a method for electrically contacting a component (10) (e.g. a substrate) with at least one electrical contact (30), an open-cell contact layer is additively formed on the at least one contact (30), in particular using a nozzle (55). The contact layer can be in tangled form (160), a folded weave (wire) (260) or foam crumbs (360) which are left behind after the evaporation of a carrier liquid (355) from a paste applied to the component (10), said paste comprising particles (of a mixture of granular material (360) in the form of foam crumbs (360) and the carrier liquid (355)). The contact layer can be then electrically contacted with the contact (30) by electroplating (especially electrochemically or without external current). A power module (50) can have a cooling channel in which a power component is provided together with the contact layer used to contact said component, and a cooling fluid, in particular a coolant liquid or coolant gas can flow through the cooling channel.
PCT/EP2018/052292 2017-02-08 2018-01-30 Electrical interconnection method and performance module WO2018145955A2 (en)

Applications Claiming Priority (6)

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DE102017201979 2017-02-08
DE102017201979.4 2017-02-08
DE102017001248 2017-02-09
DE102017001248.2 2017-02-09
DE102017211619.6 2017-07-07
DE102017211619.6A DE102017211619A1 (en) 2017-02-08 2017-07-07 Method for electrical contacting and power module

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WO2018145955A3 true WO2018145955A3 (en) 2018-11-29

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EP1198001A2 (en) * 1994-11-15 2002-04-17 Formfactor, Inc. Method of testing and mounting devices using a resilient contact structure
DE102004048529A1 (en) * 2003-10-23 2005-05-25 Luk Lamellen Und Kupplungsbau Beteiligungs Kg Electronic device for driving brushless motor, has semiconductor chip with one contact side bonded to metallic conductor portion through solid soldering agent layer whose softening temperature is used as device operating temperature
WO2006068643A1 (en) * 2004-12-20 2006-06-29 Semiconductor Components Industries, L.L.C. Semiconductor package structure having enhanced thermal dissipation characteristics
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DE102009003294A1 (en) * 2009-05-20 2010-11-25 Robert Bosch Gmbh Control device for controlling hydraulic transmission of motor vehicle, has spring elastic elements arranged between base plate and bearing surface of heat sink, and formed of contact surfaces or metallic contact points
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