WO2018145728A1 - Dispositif électroluminescent, agencement électroluminescent doté d'un tel dispositif et procédé de production d'un tel dispositif - Google Patents

Dispositif électroluminescent, agencement électroluminescent doté d'un tel dispositif et procédé de production d'un tel dispositif Download PDF

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Publication number
WO2018145728A1
WO2018145728A1 PCT/EP2017/052633 EP2017052633W WO2018145728A1 WO 2018145728 A1 WO2018145728 A1 WO 2018145728A1 EP 2017052633 W EP2017052633 W EP 2017052633W WO 2018145728 A1 WO2018145728 A1 WO 2018145728A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
semiconductor chip
transparent material
emitting device
emitting
Prior art date
Application number
PCT/EP2017/052633
Other languages
English (en)
Inventor
Keng Chong LIM
Wey Shyan LEE
Jun Jun LIM
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to PCT/EP2017/052633 priority Critical patent/WO2018145728A1/fr
Publication of WO2018145728A1 publication Critical patent/WO2018145728A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Definitions

  • LIGHT-EMITTING DEVICE LIGHT-EMITTING ARRANGEMENT WITH SUCH A DEVICE AND METHOD FOR PRODUCING SUCH A DEVICE
  • a light-emitting device, a light-emitting arrangement and a method for producing a light-emitting device are specified.
  • the document WO 2016/131872 A2 describes a light-emitting device.
  • a light-emitting device is specified.
  • the light-emitting device is, for example, a light-emitting diode.
  • the light- emitting device emits light during operation. Thereby light is understood to be electromagnetic radiation in the spectral range from infrared radiation through visible light to ultraviolet radiation.
  • the light-emitting device comprises a light-emitting
  • the light-emitting semiconductor chip is, for example, a light-emitting diode chip.
  • the light-emitting semiconductor chip comprises, for example, a carrier or a growth substrate onto which layers of an epitaxially grown semiconductor material are applied.
  • the light-emitting semiconductor chip comprises, for example, a carrier or a growth substrate onto which layers of an epitaxially grown semiconductor material are applied.
  • the light-emitting semiconductor chip comprises, for example, an active zone in which light is produced during the operation of the light-emitting
  • the light is electromagnetic radiation from the spectral range between infrared radiation and ultraviolet radiation.
  • the light-emitting semiconductor chip comprise a top surface, a bottom surface and at least one side surface, for example, four side surfaces which connect the top surface and the bottom surface. In operation of the light-emitting
  • the device comprises a transparent material, which completely surrounds the semiconductor chip at its side surfaces. That is to say in lateral directions which, for example, run in parallel to the plane which at least in places runs in parallel to the area of main extension of the bottom surface of the semiconductor chip, the semiconductor chip is
  • the transparent material is in direct contact with each side surface of the semiconductor chip. Further, it is possible that each side surface of the semiconductor chip is covered with the transparent material. In particular, at least 90% of each side surface is covered with the transparent material and in direct contact with the transparent material. Thereby it is also possible that each side surface is completely covered with the transparent material .
  • the transparent material is, for example, an optically clear and electrically insulating material.
  • the transparent material is free of particles, which are
  • the device comprises a conversion element, which comprises at least one luminescent substance.
  • the conversion element for example, comprises a matrix or a base material into which particles of the luminescent substance are dispersed.
  • Light emitted from the light-emitting semiconductor chip during operation, which enters the conversion element can be converted by the conversion element to light having different wavelengths, for example a greater wavelength.
  • the mixed radiation is white light.
  • the transparent material terminates flush with the top surface of the semiconductor chip or the top surface projects over the transparent material. That is to say, the transparent
  • the top surface of the semiconductor chip and the bottom surface of the semiconductor chip remain completely or largely free from the transparent material.
  • “Largely free” means that according to the method of manufacturing the device residues of transparent material can for example remain on the top surface of the semiconductor chip.
  • the amount of these residues is small in comparison to the total amount of transparent material applied to the side surfaces of the semiconductor chip. For example, at most 1% of the volume of the applied transparent material remains at the top surface of the semiconductor chip, wherein the remaining 99% is applied in the region of the side surfaces of the semiconductor chip.
  • the conversion element covers an outer area of the transparent material and the top surface of the semiconductor chip. That is to say, the conversion element is not only applied to the surface of the semiconductor chip, but the conversion element also covers an outer area of the transparent material.
  • the light-emitting semiconductor chip and the transparent material are applied to a carrier. In this case, all outer surfaces of the transparent material which are not covered by the semiconductor chip and which are not covered by the carrier are covered by the conversion element. Further the complete top surface of the semiconductor chip is covered by the conversion element. Thereby the conversion element can be in direct physical contact with the semiconductor chip and the transparent material.
  • a light-emitting device comprising:
  • a light-emitting semiconductor chip comprising a top surface, a bottom surface and side surfaces which connect the top surface and the bottom surface
  • the transparent material terminates flush with the top surface of the semiconductor chip or the top surface projects over the transparent material
  • the conversion element covers an outer area of the
  • the light-emitting device described herein is of a chip scale packaging design. That is to say, the light- emitting device consists of the semiconductor chip, the transparent material and the conversion element.
  • Such devices of chip scale packaging design often have the problem that light which is emitted through side surfaces of the chip is absorbed by components of the device. This limits the entire brightness efficiency. This is in particular the case when a material filled with reflecting particles like, for example, particles of T1O2 is used to encapsulate the chip at its side surfaces in order to prevent so-called blue ring radiation.
  • This blue ring radiation - also called blue piping - arises from light emitted by the semiconductor chip in the region of the edge, which surrounds the top surface of the semiconductor chip.
  • the present device inter alia relies on the insight that the extraction of light can be maximized while preventing any blue ring emission problem by embedding the semiconductor chip at its side surfaces into the transparent material wherein the outer surfaces of the transparent material and the top surface of the semiconductor chip are covered by the conversion element.
  • a transparent material with a high refractive index in the region of the refractive index of the carrier or the substrate of the semiconductor chip which enhances the light extraction out of the chip and allows to guide the light to the conversion element.
  • transparent materials which have a refractive index, which is closer to the refractive index of the carrier or the substrate of the semiconductor chip than the refractive index of the conversion element. Further, in this way the light emitted at the side surfaces of the semiconductor chip is not blocked by a reflective material, which has been found to lower the efficiency losses of the device.
  • the reflective material has a naturally high reflectivity.
  • the absorption losses can contribute up to 1% of the light emitted by the semiconductor chip.
  • light emitted from the semiconductor chip will enter directly into the conversion element from the top surface of the chip or directly from the transparent material. For light which is back-scattered from the
  • the here described device has a very broad brightness radiation pattern. Further, also due to the emission at the top surface and from the side surfaces there is a better angular
  • the transparent material has planar outer surfaces wherein each outer surface encloses an angle with a plane which at least in places runs parallel to the area of main extension of the bottom surface of the semiconductor chip and the absolute value of the angle is at least 20° and smaller than 90°. That is to say each outer surface, for example four outer
  • the transparent material is formed in the manner of an inclined plane which connects on its upper side to the semiconductor chip.
  • the lower side of the inclined plane for example, connects to a carrier onto which the device is applied .
  • the angle is chosen between at least 45° and at most 60°. With such an angle it is in particular feasible to add the conversion element at the outer surfaces of the transparent material and the top surface of the semiconductor chip. This is because the transition between the top surface of the semiconductor chip and the transparent material is not too steep and the angle is not so small that the outer surfaces of the transparent material become too extended such that the light emitted by the semiconductor chip is
  • the transparent material has four outer surfaces, which are inclined by the angle with respect to the plane.
  • each outer surface contacts the semiconductor chip at an edge which surrounds the top surface. That is to say, the upper ends of the outer surfaces, which are formed for example as inclined planes, end at the edge, which surrounds the top surface of the chip.
  • the outer surfaces form ramps, which connect the surface of a carrier onto which the device is applied with the top surface of the semiconductor chip. This allows for a particularly smooth transition between the top surface of the semiconductor chip and the outer surfaces of the transparent body.
  • the conversion element which is applied on the outer surfaces of the transparent material and the top surface of the semiconductor body can be a layer of constant thickness. Due to the smooth transition, the thickness of the layer can even be kept constant in the region of the edge of the semiconductor body. All in all this leads to a homogenous colour locus of the emitted light in all emission directions.
  • the light-emitting device has the shape of a truncated pyramid. That is to say, the semiconductor chip and the transparent body formed with the transparent material form a truncated pyramid which itself is covered by the conversion element.
  • the conversion element is of a constant thickness and over- molds the transparent material in the semiconductor chip following the outer contour of these elements. Accordingly, also the light-emitting device comprising the chip, the transparent material and the conversion element has the shape of a truncated pyramid.
  • the base of this pyramid is formed by parts of the transparent material and the semiconductor chip and is for example rectangular.
  • the semiconductor chip is surface-mountable via contact elements arranged at the bottom surface of the chip.
  • the semiconductor chip is a semiconductor chip comprising a sapphire substrate.
  • the semiconductor chip is a so-called sapphire chip.
  • the semiconductor chip can be a sapphire flip-chip for which the contact elements for electrically connecting the semiconductor chip are arranged at the bottom surface of the chip.
  • Such a sapphire chip has side surfaces of a large area, which are predominantly formed by the sapphire material of the growth substrate.
  • the transparent material has an optical refractive index of at least 1.5 for electromagnetic radiation with a wavelength of 589 nm. That is to say, the transparent material is a
  • the material with a high refractive index for example a HRI silicon. That is to say, in particular the sapphire flip- chip is covered with a HRI clear silicon skin, which covers the side surfaces of the semiconductor chip.
  • the transparent material thereby maximizes the extraction of light out of the semiconductor chip to the conversion element as it provides a closer refractive index value to the sapphire material of the chip than the conversion element. Further, the transparent material does not block the side emission through the side surfaces of the semiconductor chip.
  • the top surface of the semiconductor chip is also formed by material of the sapphire substrate.
  • the semiconductor layers comprising the active region which produces light during operation of the chip are arranged at a side of the sapphire substrate which faces away from the top surface of the chip.
  • the conversion element is part of a conversion sheet.
  • the conversion element is an A-stage phosphor sheet which is laminated onto the transparent material covering both the semiconductor chip' s top surface and the side surfaces conforming to the transparent material.
  • A-stage phosphor sheet melts and conforms to the transparent material to prevent any Fresnel losses at the interface between the transparent material and the conversion element and simultaneously to form chemical bonding to the
  • the mechanical bond between the transparent material and the conversion element is particularly strong if the transparent material is formed with a HRI silicon.
  • the extraction of light from the semiconductor chip is maximized and, for example, extracted blue light emitted from the semiconductor chip is transmitted to the conversion element with minimum absorption losses.
  • the overall brightness efficiency is enhanced.
  • the risk of a blue ring emission is heavily reduced by the described design.
  • a light-emitting arrangement comprising a here- described light-emitting device is specified. All features described for the light-emitting device are also described for the light-emitting arrangement and vice versa.
  • the light-emitting arrangement comprises a light-emitting device described herein, a
  • connection carrier which comprises a base body and connection locations and a reflective layer which is arranged between the light-emitting device and the base body.
  • the reflective layer can be a separate component or be part of the connection carrier.
  • connection carrier is, for example, a circuit board or a printed circuit board, which comprises connection locations for contacting the light-emitting device. It is further possible that the connection carrier is a flexible circuit board or a flexible printed circuit board.
  • the reflective layer is, for example, a layer formed with reflective or light-scattering particles like particles of TiC>2 ⁇ Further, it is possible that the light-reflective layer is formed as a reflective metal layer, which can be formed, for example, of silver. Further, it is possible that the light-reflective layer is formed with layers of insulating material having different refractive indexes such that the light-emitting layer is, for example, given by a Bragg reflector. Further, it is possible that the reflective layer is formed with the solder stop material, which, for example, is of white colour.
  • the light-emitting device is mechanically and electrically connected to the connection carrier, for example via the contact elements of the chip.
  • the light-emitting device and the connection carrier are connected using a solder material or an electrical conductive glue.
  • the reflective layer covers the light-emitting device at its bottom surface in the region of the
  • the light-reflecting material fills, except for the connection locations, an area, which has the same shape and the same size as the bottom surface of the light-emitting device, which is formed, by the bottom
  • the reflective layer not only reflects radiation emitted through the bottom surface of the semiconductor chip in the direction of the connection carrier but also light emitted through the bottom surface of the transparent material in the direction of the connection carrier is reflected by the reflective layer.
  • the method comprises a method step in which a plurality of light- emitting semiconductor chips is placed on an auxiliary carrier .
  • the auxiliary carrier is, for example, formed with a rigid material like a plastic material or a metal material.
  • a release tape like, for example, a thermal release tape such as a REVALPHA tape can be arranged.
  • each semiconductor chip is surrounded with a transparent material.
  • a ramp-like HRI clear silicon skin is formed covering the four side surfaces of each semiconductor chip via a film-assisted molding process.
  • a conversion sheet for example an A- stage phosphor sheet, is applied over a plurality of arrangements wherein each arrangement comprises a light- emitting diode chip and its corresponding transparent
  • the conversion sheet is applied over all light-emitting semiconductor chips of the plurality of semiconductor chips.
  • a plurality of light-emitting devices is produced by separating wherein each device
  • the conversion sheet comprises at least one light-emitting semiconductor chip, the corresponding transparent material surrounding the at least one light-emitting semiconductor chip and a conversion element which is a part of the conversion sheet.
  • the conversion sheet is fastened to the transparent material by curing under vacuum suction. That is to say, the conversion sheet is, for example, laminated onto the semiconductor chip and the transparent material by applying vacuum pressure in order to conform the conversion element. Afterwards the whole assembly can be subjected to final curing for both the conversion element and the transparent material.
  • FIG. 1A and IB show a here- described light-emitting device according to a first
  • FIG. 1A shows a schematic sectional view of an embodiment of a here-described light-emitting device.
  • the light-emitting device comprises a light-emitting semiconductor chip 1, which is, for example, a sapphire flip-chip.
  • the semiconductor chip 1 has a substrate 12, which is, for instance, formed with sapphire and a semiconductor body 13, which is, for example, epitaxially grown on the substrate.
  • the semiconductor body 13 can comprise one or more active zones in which radiation is produced during operation of the chip 1.
  • the light-emitting semiconductor chip 1 comprises a top surface la, a bottom surface lb and four side surfaces lc, which connect the top surface la and the bottom surface lb with each other.
  • a transparent material 2 which is, for example, a silicon with a refractive index of at least 1.5, in particular of at least 1.56, surrounds the semiconductor chip 1 at its side surfaces lc, completely.
  • the transparent material 2 has planar outer surfaces 2c, which form inclined planes, which connect the edge Id of the semiconductor chip 1 and the bottom plane 4.
  • the plane 4 is parallel to a plane of main extension of the bottom surface lb of the light-emitting semiconductor chip 1.
  • the transparent material 2 terminates flush with the top surface la of the semiconductor chip which allows for a particular smooth transition between the chip 1 and the transparent material 2 at the edge Id of the chip.
  • the light-emitting device further comprises a conversion element 3 which comprises at least one luminescence
  • the conversion element 3 is a part of an A-plane phosphor sheet.
  • the conversion element covers an outer area of the transparent material and the top surface of the semiconductor chip 1 and is in direct contact with the transparent material and the top surface la of the
  • the transparent material 2 and leaves the transparent material 2 thereby entering the conversion element 3 where at least part of the light is converted such that the light-emitting device for example emits white light.
  • Figure IB shows a top view of the light-emitting device shown in Figure 1A. As becomes apparent from Figure IB the light- emitting device has the shape of a truncated pyramid.
  • the schematic drawings of 2A and 2B show an embodiment of a here described arrangement comprising an embodiment of a here described light-emitting device 100.
  • the light-emitting device 100 comprises contact elements 11 at its bottom surface 100b and is therefore surface-mountable .
  • the contact elements 11 are thereby the contact elements of the
  • the contact elements 11 are electrically and mechanically connected to contact locations 51 of the
  • connection carrier 5 which is, for example, a printed circuit board.
  • connection carrier 5 comprises a base body 50 of an electrically insulating material onto which the connection locations 51 are arranged. Between the light-emitting device 100 and the base body 50 a reflective layer 52 is arranged which has the shape and size of the footprint 53 of the light-emitting element. Thereby Figure 2B shows a top view of the connection carrier 5. Thereby it is one further advantage of the here described light-emitting element that the
  • footprint 53 of the light-emitting element is small in comparison with an element comprising an additional
  • transparent material is applied using a film-assisted method process .
  • the sheet is applied in a conform manner to the transparent material 2 and the top surfaces la of the chips 1 in the direction of the arrows indicated in Figure 3C.
  • single light-emitting devices are produced, for example by sawing into individual units. These units can be transferred and laminated to a final testing station .
  • a comparison example of a light- emitting device comprises the same light-emitting chip as a here-described light-emitting device and the same conversion element 3 as a here-described device.
  • the chip 1 is embedded into a reflective coating 8 which is, for example formed with an HRI silicon into which reflective particles TiC>2 are introduced.
  • the reflective coating 8 comprises 35 Wt% of T1O2 ⁇
  • the refractive index of the matrix material is 1.5675.
  • Figure 5A shows the intensity in cd against the emission angle for two directions.
  • Figure 5B shows the same curves for a here-described light-emitting device. According to these measurements a here-described device according to figure 4B has an efficiency of 8.7401 in comparison with an efficiency of 8.1087 for the device of Figure 4A.
  • the luminous flux ⁇ for the present device is 29.7 lumen wherein the luminous flux for the comparison example is 27.5 lumen. All in all the brightness gain due to the described design is 7.6%.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

Selon un aspect de l'invention, un dispositif électroluminescent est spécifié, ledit dispositif électroluminescent comprenant : une puce semi-conductrice électroluminescente comprenant une surface supérieure, une surface inférieure et des surfaces latérales qui relient la surface supérieure et la surface inférieure, un matériau transparent qui entoure complètement la puce semi-conductrice au niveau de ses surfaces latérales, un élément de conversion qui comprend au moins une substance luminescente, le matériau transparent se terminant en affleurement avec la surface supérieure de la puce semi-conductrice ou la surface supérieure faisant saillie sur le matériau transparent, et l'élément de conversion recouvrant une zone externe du matériau transparent et la surface supérieure de la puce semi-conductrice.
PCT/EP2017/052633 2017-02-07 2017-02-07 Dispositif électroluminescent, agencement électroluminescent doté d'un tel dispositif et procédé de production d'un tel dispositif WO2018145728A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/EP2017/052633 WO2018145728A1 (fr) 2017-02-07 2017-02-07 Dispositif électroluminescent, agencement électroluminescent doté d'un tel dispositif et procédé de production d'un tel dispositif

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2017/052633 WO2018145728A1 (fr) 2017-02-07 2017-02-07 Dispositif électroluminescent, agencement électroluminescent doté d'un tel dispositif et procédé de production d'un tel dispositif

Publications (1)

Publication Number Publication Date
WO2018145728A1 true WO2018145728A1 (fr) 2018-08-16

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130285087A1 (en) * 2012-04-27 2013-10-31 Horng-Jou Wang Light emitting device and manufacturing method thereof
US20150054011A1 (en) * 2013-08-22 2015-02-26 Kabushiki Kaisha Toshiba Light emitting device
US20150102373A1 (en) * 2013-10-10 2015-04-16 Samsung Electronics Co., Ltd. Light emitting diode package and method of manufacturing the same
WO2016131872A1 (fr) 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Procédé de fabrication d'un composant photoémetteur et composant photoémetteur
US20160276546A1 (en) * 2015-03-18 2016-09-22 Genesis Photonics Inc. Chip package structure and method of manufacturing the same
US20160293812A1 (en) * 2013-11-14 2016-10-06 Osram Opto Semiconductors Gmbh Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130285087A1 (en) * 2012-04-27 2013-10-31 Horng-Jou Wang Light emitting device and manufacturing method thereof
US20150054011A1 (en) * 2013-08-22 2015-02-26 Kabushiki Kaisha Toshiba Light emitting device
US20150102373A1 (en) * 2013-10-10 2015-04-16 Samsung Electronics Co., Ltd. Light emitting diode package and method of manufacturing the same
US20160293812A1 (en) * 2013-11-14 2016-10-06 Osram Opto Semiconductors Gmbh Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device
WO2016131872A1 (fr) 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Procédé de fabrication d'un composant photoémetteur et composant photoémetteur
US20160276546A1 (en) * 2015-03-18 2016-09-22 Genesis Photonics Inc. Chip package structure and method of manufacturing the same

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