WO2018127355A1 - Dispositif capteur à mems à structure piézoélectrique et procédé de fabrication associé - Google Patents

Dispositif capteur à mems à structure piézoélectrique et procédé de fabrication associé Download PDF

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Publication number
WO2018127355A1
WO2018127355A1 PCT/EP2017/082020 EP2017082020W WO2018127355A1 WO 2018127355 A1 WO2018127355 A1 WO 2018127355A1 EP 2017082020 W EP2017082020 W EP 2017082020W WO 2018127355 A1 WO2018127355 A1 WO 2018127355A1
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WO
WIPO (PCT)
Prior art keywords
layer
piezoelectric
sensor device
portions
virtual plane
Prior art date
Application number
PCT/EP2017/082020
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German (de)
English (en)
Inventor
Thomas Buck
Original Assignee
Robert Bosch Gmbh
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Filing date
Publication date
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Publication of WO2018127355A1 publication Critical patent/WO2018127355A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/02—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/081—Shaping or machining of piezoelectric or electrostrictive bodies by coating or depositing using masks, e.g. lift-off
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/019—Suspended structures, i.e. structures allowing a movement characterized by their profile
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Definitions

  • the present invention relates to a microelectromechanical
  • the MEMS sensor device may in particular be a microelectromechanical pressure sensor device, preferably a microelectromechanical microphone.
  • Microelectromechanical (MEMS) sensor devices are needed for a variety of applications, such as microphones in mobile
  • Devices such as smartphones.
  • Conventional microelectromechanical microphones are either capacitive microphones or use piezoelectric ones
  • Piezoelectric structures are structures to which deformation, e.g. during an expansion or compression, an electrical voltage is created. Intrinsic deformations of a piezoelectric structure from a
  • Piezoelectric layers which are interconnected.
  • a pressure is applied to such a piezoelectric structure, for example due to sound, the different deformation of the two or more interconnected piezoelectric layers can thus result in an effective, non-destructive effect. result in vanishing voltage on the piezoelectric structure, which can act as a sensor signal.
  • the present invention discloses a micromechanical sensor device having the features of patent claim 1, a manufacturing method having the features of patent claim 10 and a manufacturing method having the features of patent claim 11.
  • a microelectromechanical sensor device having a piezoelectric sensor structure having a piezoelectric sensor structure.
  • Sensor structure has in particular a piezoelectric material or consists of a piezoelectric material.
  • piezoelectric materials for example, piezoelectric ceramics and / or piezoelectric crystals come into question.
  • the piezoelectric material may be, for example
  • the piezoelectric sensor structure is preferably formed in one piece and connected.
  • the piezoelectric sensor structure has a number of first sections, which are arranged within a first virtual, ie imaginary, plane or layer.
  • the piezoelectric sensor structure also has a number of second sections which are arranged within a second virtual, ie imaginary, plane or layer or pass through a second virtual plane or layer.
  • the first virtual plane or layer and the second virtual plane or layer are different from each other and arranged parallel to each other.
  • the first virtual plane or layer and the second virtual plane or layer may be spaced apart from each other by a non-fading pitch. It should be understood that said arrangement of the first and second portions with respect to the first and second virtual plane or layer is related to a rest position of the sensor structure.
  • the sections of the sensor structure have a finite thickness, in the foregoing and in the following, some are also referred to as planes, in particular because the sections preferably have a small thickness compared to their lateral dimensions.
  • the number of first and / or second portions may be a number of one or a plurality, e.g. to act two, three or more first or second sections.
  • a second section, in each case exactly one second section, is preferably arranged, directly or indirectly, between every two first sections. Also preferably, directly or indirectly, between each two second sections each have a first section, in particular each exactly a first section, respectively.
  • the first and second portions may be connected to each other, exclusively or partially, directly or directly, within the piezoelectric sensor structure.
  • each of the first sections is directly connected to at least one of the second sections.
  • each of the first sections, each with at least one of the second sections indirectly, e.g. via a respective third section, wherein the respective third section may extend in particular between the first virtual plane or layer and the second virtual plane or layer.
  • each of the second sections is directly connected to at least one of the first sections.
  • each of the second sections is connected to at least one of the first sections indirectly, for example via a respective third section, wherein the respective third section is in particular between the first virtual plane or layer and the second virtual plane or layer can extend. Preference is given between each two first sections each, in this
  • one of the third sections, one of the second sections, and another of the third sections arranged. Also preferred are between each two second sections each, in this order, one of the third
  • Sections one of the first sections, and another of the third sections arranged.
  • Rectangular function or the function curve of a periodic delta function is a rectangular function in which a respective section
  • non-zero contiguous function values is as wide as a respective portion of contiguous function values equal to zero.
  • An asymmetric periodic rectangular function is understood to mean a rectangular function in which a respective section of non-zero contiguous function values has a different width than a respective section
  • coherent function values is zero, in particular narrower.
  • the virtual layer or layer may be a flat layer, i. a layer without curvature act. But the layer can also
  • a method for manufacturing a microelectromechanical sensor device comprises at least the steps: forming at least one depression and / or at least one elevation in or on a surface of a substrate; Depositing a sacrificial layer on the substrate and the at least one depression and / or at least one elevation; Forming a piezoelectric layer on the sacrificial layer at least in the region of the at least one depression and / or at least one elevation; and partially removing the substrate and sacrificial layer to partially expose the piezoelectric layer.
  • a finding underlying the present invention is that a single piezoelectric structure - instead of a plurality of interconnected piezoelectric layers - for a
  • piezoelectric layers can avoid intrinsic deformations of the two or more layers due to their connection. Thus, a more precise sensor device can be provided.
  • the targeted shaping of the first and second sections of the piezoelectric sensor structure makes the MEMS sensor device particularly versatile and adaptable for a wide variety of applications.
  • the microelectromechanical sensor device can be optimized in particular with regard to a sensitivity or a stress gradient f.
  • the first sections and the second sections are formed in a direction parallel to the first and / or the second virtual plane or layer having a same width.
  • the sequence of the first and second sections can thus be periodic.
  • a uniformly resilient and sensitive sensor structure can be provided.
  • the first sections and the second sections are formed in a direction parallel to the first and / or the second virtual plane or layer having different widths.
  • the sensor structure is thus versatile adaptable.
  • adjacent first sections and second sections of the piezoelectric sensor structure partially overlap each other, in particular in a direction parallel to the first and the second virtual plane or layer.
  • the piezoelectric sensor structure can be produced with little effort and designed to be particularly robust and space-saving.
  • microelectromechanical sensor device a frame device, on which the piezoelectric sensor structure is suspended.
  • the piezoelectric sensor structure may be suspended from the frame means at one end of the piezoelectric sensor structure. In this way, a mobility of the sensor structure and thus a sensitivity of the sensor device can be increased.
  • the piezoelectric sensor structure may be suspended from the frame means at one end of the piezoelectric sensor structure. In this way, a mobility of the sensor structure and thus a sensitivity of the sensor device can be increased.
  • the piezoelectric sensor structure may be suspended from the frame means at one end of the piezoelectric sensor structure. In this way, a mobility of the sensor structure and thus a sensitivity of the sensor device can be increased.
  • the piezoelectric sensor structure may be suspended from the frame means at one end of the piezoelectric sensor structure. In this way, a mobility of the sensor structure and thus a sensitivity of the sensor device can be increased.
  • the piezoelectric sensor structure may be suspended from the frame means at
  • Sensor structure at two ends of the sensor structure to be suspended from the frame means can be fastened particularly stable and robust.
  • An end of the sensor structure should be understood to mean, in particular, a lateral end, ie a termination of the sensor structure in a direction parallel to the first and the second plane or layer.
  • One, two, several, or all ends of the sensor structure may be formed by one of the first and / or one of the second sections.
  • a first electrode and a second electrode are arranged both at the first sections, and in each case a first electrode and a second electrode are arranged at the second sections.
  • the first electrodes are arranged on a first side of the sensor structure and the second electrodes on the second portions and on a second side of the sensor structure on the first portions the second electrodes and on the second portions of the first electrodes. In this way, for example, with complete deformation of the sensor structure, all the first electrodes can act as cathodes and all the second electrodes can function as anodes or vice versa.
  • two different halves of the space should be understood by the first and the second side, into which the three-dimensional space is subdivided by the first and / or second virtual plane or layer of the sensor structure.
  • both the first electrodes and the second electrodes may be disposed only at the first portions.
  • the sensor device comprises an evaluation device, which is electrically connected to the first electrodes and the second electrodes and which is designed to, a
  • FIG. 1 is a schematic cross-sectional view through a microelectromechanical sensor device according to a
  • Fig. 2 is a schematic cross-sectional view through a
  • microelectromechanical sensor device according to another embodiment of the present invention.
  • Fig. 3 is a schematic cross-sectional view through a
  • microelectromechanical sensor device according to still another embodiment of the present invention.
  • Fig. 4 is a schematic cross-sectional view through a
  • microelectromechanical sensor device according to still another embodiment of the present invention.
  • Fig. 5 is a schematic cross-sectional view through a
  • microelectromechanical sensor device according to still another embodiment of the present invention.
  • FIG. 6 is a schematic flowchart for explaining a method of manufacturing a microelectromechanical sensor device according to still another embodiment of the present invention.
  • Fig. 7 shows schematic cross-sectional views of one in the manufacture
  • microelectromechanical sensor device located microelectromechanical sensor device according to the method of FIG. 6;
  • FIG. 8 is a schematic flowchart for explaining a method of manufacturing a microelectromechanical sensor device according to still another embodiment of the present invention.
  • microelectromechanical sensor device located microelectromechanical sensor device according to the method of FIG. 8; and 10 is a schematic flowchart for explaining a method of manufacturing a microelectromechanical sensor device according to still another embodiment of the present invention.
  • Fig. 1 shows a schematic cross-sectional view through a
  • microelectromechanical sensor device 110 according to an embodiment of the present invention.
  • FIG. 1 shows the sensor device 110 in a cross-section in an x-y plane, wherein a z-axis, which together with the x-axis and the y-axis forms an orthogonal tripod, emerges from the plane of the paper.
  • the sensor device 110 comprises at least one piezoelectric
  • the piezoelectric sensor structure 114 which is formed of a piezoelectric material, e.g. made of PZT or aluminum nitride.
  • the piezoelectric sensor structure 114 is formed of first portions 111, second portions 112, and third portions 113, which are thus each formed of the piezoelectric material.
  • one of the first sections 111 of the sensor structure 114 is first followed by one of the third sections
  • Sections 113 in turn, this one of the second portions 112, in turn, this another one of the third portions 113, and in turn another of the first portions 111 and so on up to the ends of the sensor structure 114th
  • the first sections 111 of the sensor structure 114 are all arranged, in a rest position of the sensor structure 114, within a first virtual plane or layer El.
  • the second portions 112 of the sensor structure 114 are all, in the rest position of the sensor structure 114, disposed within a second virtual plane or layer E2.
  • the first virtual plane or layer El and the second virtual plane or layer E2 are different from each other and, in the rest position of the
  • Sensor structure 114 arranged at a constant distance dl from each other parallel to each other.
  • the layer or virtual plane between the first virtual plane or layer El and the second virtual plane or layer E2 can also be referred to as intermediate layer or intermediate layer Z.
  • a layer thickness of the intermediate plane or intermediate layer Z is thus equal to the distance dl.
  • the third portions 113 of the sensor structure 114 all extend between the first virtual plane or layer El and the second virtual plane or layer E2, i. within the intermediate layer Z.
  • the third sections 113 are preferably perpendicular to the first and the second virtual plane or
  • the sensor structure 114 thus has a cross section in the form of a periodic
  • the sensor structure 114 thus has a grooved or grooved three-dimensional structure, which is comparable to a corrugated sheet, wherein the grooves or grooves extend with their longitudinal direction in the z direction.
  • the first and the second virtual plane or layer El, E2 are arranged parallel to the xz-plane, ie to the plane which is spanned by the x- and the z-coordinate axis.
  • the first portions 111 are formed equal to each other, all second portions 112 are formed equal to each other, and all the third portions 113 are formed the same, and it is not necessary to do so. Furthermore, in the sensor structure 114, the first and the second portions 111, 112 are formed with the same dimensions, although this is not mandatory. Accordingly, in the sensor structure 114, a width Bl in the x-direction of each individual first portion 111 is equal to a width B2 in the x-direction of each individual second portion 112. The sensor structure 114 thus has a symmetrical periodic cross-section
  • a first electrode 121 is attached to each of the first portions 111 and attached to each of the second portions 112 each have a second electrode 122 attached.
  • a second side H2 e.g. in the positive y-direction, the
  • Sensor structure 114 is attached to each of the first portions 111, a second electrode 122 and attached to each of the second portions 112 each have a first electrode 121 attached. In an evaluation of the voltage applied to the sensor structure 114
  • Sensor structure 114 can be used around a bending axis, which is arranged parallel to the x-direction.
  • the sensor device 110 may optionally have a frame device, on which the sensor structure 114 at a
  • End of the sensor structure 114 or at two or more ends of the sensor structure 114 is suspended. Possible embodiments of a frame device are shown schematically, for example, in the following FIGS. 7d) and 9d).
  • the sensor device 110 may alternatively be designed to be connected at one or more ends to a frame device, ie to be hung up.
  • plated-through holes can be formed through the sensor structure 114, in particular the suspension of the sensor structure 114 adjacent to the frame device.
  • the sensor device 110 may also, or alternatively, a
  • Evaluation device which is electrically connected to the first electrode 121 and the second electrode 122 and which is adapted to generate and output a sensor signal based on a voltage, or voltages, between the first electrode 121 and the second electrode 122.
  • the sensor device 110 can also be designed to be connected to an external evaluation device.
  • Fig. 2 shows a schematic cross-sectional view through a
  • microelectromechanical sensor device 210 having a sensor structure 214 according to another embodiment of the present invention.
  • Sensor device 210 is a variant of sensor device 110 and is adaptable according to all variants and modifications described with respect to sensor device 110, and vice versa.
  • the sensor structure 214 of the sensor device 210 differs from that of FIG.
  • the first portions 211 of the sensor structure 214 which may otherwise be formed as the first portions 111 of the sensor structure 114 of the sensor device 110, are directly connected to the second portions 212 of the sensor structure 214, which may otherwise be formed as the second Sections 112 of the sensor structure 114 of the sensor device 110.
  • the first virtual plane or layer El in the sensor device 210 directly adjoins the second virtual plane or layer E2.
  • First and second electrodes may also be disposed and mounted on the first and second portions 211, 212, and evaluated as with respect to the first and second electrodes 121, 122 and the first and second portions 111, 112 of the sensor structure 114 of the sensor device 110 described above.
  • the first and second electrodes may also be arranged and attached only to the first portions 211 or only to the second portions 212.
  • Fig. 3 shows a schematic cross-sectional view through a
  • microelectromechanical sensor device 310 with a sensor structure 314 according to yet another embodiment of the present invention.
  • the sensor device 310 is a variant of the sensor device 110 and is adaptable according to all variants and modifications described with respect to the sensor device 110 and vice versa.
  • the sensor device 310 differs from the sensor device 110 in particular, or exclusively, in that a width B2 'in the x direction of the second sections 312 of the sensor structure 314 of the sensor device 310 is of a width ⁇ in the x direction of the first sections 311 of the sensor structure 314 of the
  • Sensor device 310 differentiates, and that first electrodes 321 and second electrodes 322 are arranged only on the first portions 311, but not on the second portions 312nd
  • the width B2 'of each of the second portions 312 is made smaller than the width ⁇ of each of the first portions 311.
  • the sensor structure 314 thus has a cross-section in the form of an asymmetrical periodic rectangular function, the x-direction acting as abscissa and the y-direction as ordinate.
  • Sensor structure 214 may include second portions 212 having a smaller width than have the first portions 211, analogous to that described with respect to the sensor structure 314.
  • Fig. 4 shows a schematic cross-sectional view through a
  • microelectromechanical sensor device 410 with a sensor structure 414 according to yet another embodiment of the present invention.
  • the sensor device 410 is a variant of the sensor device 310 and is adaptable according to all variants and modifications described with respect to the sensor device 310 and vice versa.
  • the sensor device 410 differs from the sensor device 310 in particular, or exclusively, in that between every two first sections 411 of the
  • Sensor structure 314 of the sensor device 310 a sequence of two third sections 313 and a second section 312nd
  • the second portions 412 of the sensor structure 414 are formed as tower structures perpendicular to the first virtual plane or layer El, traversing a second virtual plane or layer E2 extending from the first virtual plane or layer El through an intermediate layer Z, i. by a non-vanishing distance d4, is spaced.
  • a width B2 "of the second sections 412 is less than a width Bl" of the first sections 411, in particular less than half the width Bl "of the first sections 411, preferably less than a quarter of the width Bl" of the first sections 411.
  • Fig. 5 shows a schematic cross-sectional view through a
  • microelectromechanical sensor device 610 according to yet another embodiment of the present invention.
  • the sensor device 610 is a variant of the sensor device 110 and is in accordance with all with respect to the
  • the first, second and third portions 111, 112, 113 of a sensor structure 614 of the sensor device 610 are formed as well as with respect to Sensor structure 114 of the sensor device 110 described.
  • Sensor device 610 differs from sensor device 110 in that, in sensor structure 614, first and second electrodes 121, 122, or a portion of first and second electrodes 121, 122 are connected in pairs via electrical connections 623 in series, i. in series, are switched.
  • the voltages applied between each of a first electrode 121 and a second electrode 122 thus add up.
  • the voltages connected in series between the first and the second electrodes 121, 122 can advantageously all be tapped on the first side H 1 or on the second side H 2 of the sensor structure 614.
  • the series-connected voltages of four pairs of first and second electrodes 121, 122 can be tapped together second side H2 off.
  • all the first and second electrodes 121, 122 are connected in pairs in series.
  • FIG. 6 shows a schematic flowchart for explaining a method for producing a microelectromechanical according to the invention
  • the method according to FIG. 6 is in particular for producing one of the microelectromechanical sensor devices 110; 120; 310; 410 usable and is according to all in relation to the
  • FIG. 7 shows schematic cross-sectional views of a microelectromechanical sensor device according to the invention in the manufacture according to the method according to FIG. 6.
  • a step SOI at least one depression 502 is formed in a surface
  • the formation S01 of the at least one depression 502 can be effected, for example, by one or more trench processes.
  • an anisotropic etching method can be used, for example, reactive deep ion etching (DRI E) or etching with
  • different width recesses 502 may be formed in the substrate 500, such as to produce first or second portions having different widths, as in the foregoing with respect to FIGS
  • Figures 1 to 4 has been explained. Over a depth of the recesses 502, a later distance between the first and the second virtual plane or layer of the later completed microelectromechanical sensor device is adjustable.
  • a sacrificial layer 506 is deposited onto the substrate 500, in particular the surface 501 of the substrate 500, such that the sacrificial layer 506 also covers the surfaces of the substrate 500 in the at least one recess 502, as shown schematically in FIG. 7b) ,
  • the sacrificial layer 506 is deposited onto the substrate 500, in particular the surface 501 of the substrate 500, such that the sacrificial layer 506 also covers the surfaces of the substrate 500 in the at least one recess 502, as shown schematically in FIG. 7b) .
  • sacrificial layer 506 may be silicon dioxide, S1O2.
  • the sacrificial layer 506 becomes in an isotropic process
  • CVD chemical vapor deposition
  • SOG spin-on glass
  • a piezoelectric layer 514 is applied to the sacrificial layer 506 such that the piezoelectric layer 514 is arranged at least also in the - covered by the sacrificial layer 506 - at least one recess 502, as shown schematically in FIG. 7c).
  • the application S03 of the piezoelectric layer 514 may be characterized in particular by an isotropic Deposition takes place.
  • the electrodes can also be formed.
  • a remainder of the sacrificial layer 506 can be maintained between the sensor structure and the frame device.
  • the regions of the piezoelectric layer 514 deposited on the sacrificial layer 506 away from the depressions 502 form first sections 511 within a first virtual plane or layer, as in the preceding with respect to the first sections 111;
  • Second portions 412 of the sensor structure 414 of the sensor device 410 are adapted to produce second portions 512-2, which are formed as in the foregoing with respect to the second portions 112; 212; 312 of the sensor structures 114; 214; 314 of the sensor devices 110; 210; 310 described.
  • the partial removal of the substrate may e.g. done by trench processes.
  • the partial removal of the sacrificial layer 506 may be e.g. through fitting
  • the sensor structure 514 may be attached to the frame device For example, be hung behind and / or in front of the paper plane of Fig. 7.
  • FIG. 8 shows a schematic flow diagram for explaining a method for producing a microelectromechanical according to the invention
  • the method according to FIG. 8 is in particular for producing one of the microelectromechanical sensor devices 110; 120; 310; 410 usable and is according to all in relation to the
  • FIG. 9 shows schematic cross-sectional views of a microelectromechanical sensor device according to the invention in the manufacture according to the method according to FIG. 8.
  • a step S01 ' at least one ridge 504 is formed on a surface 501 of a substrate 500, as illustrated in FIG. 9a).
  • the forming S01 'of the at least one elevation 504 can be effected, for example, by depositing a first sacrificial layer and structuring the deposited first sacrificial layer.
  • a material for the first sacrificial layer in particular oxides and / or nitrides are suitable, e.g. Silica.
  • a spin on glass method or polymer materials can be used.
  • different width bumps 504 may be formed on the substrate 500, such as to make first or second portions of different widths, as discussed above with respect to FIGS. 1-4. Over a height of the ridges 504, i.
  • a second sacrificial layer 506 is deposited on the substrate 500 in such a way that the second sacrificial layer 506 also covers the at least one elevation 504, as shown schematically in FIG. 9b).
  • sacrificial layer 506 may be silicon dioxide, S1O2.
  • the second sacrificial layer 506 is deposited in an isotropic process, for example, chemical vapor deposition (CVD) or spin-on-glass (SOG) .
  • the first and second sacrificial layers are preferably formed of the same material
  • a piezoelectric layer 514 becomes the second one
  • Sacrificial layer 506 applied such that the piezoelectric layer 514 at least on the - from the second sacrificial layer 506 covered - at least one increase 504 is arranged, as shown in Fig. 9c) shown schematically.
  • the application S03 'of the piezoelectric layer 514 may
  • the electrodes can also be formed.
  • a step S04 ' partial removal of the substrate 500, the first sacrificial layer and the second sacrificial layer 506 to partially release the piezoelectric layer 514, i. to release the piezoelectric
  • Layer 514 such that the piezoelectric layer 514 is suspended as a sensor structure on the remaining substrate 500, which functions as a frame means.
  • a remainder of the sacrificial layer 506 can be maintained between the sensor structure and the frame device.
  • the regions deposited on the second sacrificial layer 506 away from the elevations 504 form the region
  • piezoelectric layer 514 first portions 511 within a first virtual plane or layer, as in the foregoing with respect to the first portions 111; 211, 311; 411 described.
  • the partial removal of the substrate can be done, for example, by trench processes.
  • the partial removal of the first and / or the second sacrificial layer 506 can take place, for example, by suitable etching processes.
  • the sensor structure 514 may be attached to the
  • Frame device for example, behind and / or in front of the paper plane of Fig. 9 are suspended.
  • both at least one depression 502 and at least one elevation 504 can be formed on the same substrate 500.
  • Sections may be arranged in three spaced, parallel virtual planes or layers, corresponding to an array of piezoelectric material on the
  • first and second portions can also be formed only on the elevations 504 and in the depressions 502, so that a particularly large distance between the first and the second virtual level or layer can be achieved.
  • FIG. 10 shows a schematic flowchart for explaining a method for producing a microelectromechanical according to the invention
  • the method according to FIG. 10 is in particular for producing one of the microelectromechanical sensor devices 110; 120; 310; 410 usable and is according to all in relation to the
  • a sacrificial layer is deposited on a substrate.
  • a piezoelectric layer is deposited on the sacrificial layer.
  • the piezoelectric layer is patterned.
  • the piezoelectric layer is structured in such a way, a number of first
  • the piezoelectric layer may be formed by spatially periodically removing spaced strips of piezoelectric material, such as the sensor structure 414 of the sensor device 410.
  • a step S14 partial removal of the substrate and the sacrificial layer to partially freeze the patterned piezoelectric layer, i. for releasing the piezoelectric layer such that the piezoelectric layer is suspended as a sensor structure on the remaining substrate which functions as a frame means.

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  • Micromachines (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un dispositif capteur à MEMS et un procédé de fabrication d'un dispositif capteur à MEMS. Le dispositif capteur (110) à MEMS est constitué : d'une structure de capteur piézoélectrique (114) ; la structure de capteur piézoélectrique (114) comportant un certain nombre de premières sections (111) qui sont agencées à l'intérieur d'un premier plan virtuel ou d'une première couche virtuelle (E1) et la structure de capteur piézoélectrique (114) comportant un certain nombre de deuxièmes sections (112) qui sont agencées à l'intérieur d'un deuxième plan virtuel ou d'une deuxième couche virtuelle (E2) ou qui traversent un deuxième plan virtuel ou une deuxième couche virtuelle (E2) ; le premier plan virtuel ou la première couche virtuelle (E1) et le deuxième plan virtuel ou la deuxième couche virtuelle (E2) étant différents l'un de l'autre et étant agencés parallèlement l'un à l'autre.
PCT/EP2017/082020 2017-01-04 2017-12-08 Dispositif capteur à mems à structure piézoélectrique et procédé de fabrication associé WO2018127355A1 (fr)

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DE102017200055.4 2017-01-04
DE102017200055.4A DE102017200055A1 (de) 2017-01-04 2017-01-04 MEMS-Sensorvorrichtung und Verfahren zum Herstellen einer MEMS-Sensorvorrichtung

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Citations (3)

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WO2003089957A2 (fr) * 2002-04-17 2003-10-30 M2N Inc. Microactionneur piezoelectrique et son procede de fabrication
US20090185701A1 (en) * 2008-01-18 2009-07-23 Industrial Technology Research Institute Flexible piezoelectric sound-generating devices
US20140339657A1 (en) 2008-06-30 2014-11-20 The Regents Of The University Of Michigan Piezoelectric mems microphone

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003089957A2 (fr) * 2002-04-17 2003-10-30 M2N Inc. Microactionneur piezoelectrique et son procede de fabrication
US20090185701A1 (en) * 2008-01-18 2009-07-23 Industrial Technology Research Institute Flexible piezoelectric sound-generating devices
US20140339657A1 (en) 2008-06-30 2014-11-20 The Regents Of The University Of Michigan Piezoelectric mems microphone

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Title
HONG-JIN ZHAO ET AL: "High quality PZT thick films using silicon mold technique for MEMS applications", TRANSDUCERS, SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS, 12TH INN ATIONAL CONFERENCE ON, 2003, PISCATAWAY, NJ, USA,IEEE, 8 June 2003 (2003-06-08), pages 923 - 926vol.1, XP032377645, ISBN: 978-0-7803-7731-8, DOI: 10.1109/SENSOR.2003.1215626 *
KO S C ET AL: "Micromachined piezoelectric membrane acoustic device", SENSORS AND ACTUATORS A: PHYS, ELSEVIER BV, NL, vol. 103, no. 1-2, 15 January 2003 (2003-01-15), pages 130 - 134, XP004400391, ISSN: 0924-4247, DOI: 10.1016/S0924-4247(02)00310-2 *
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