WO2018121289A1 - Mems sensor packaging structure and fabricating method thereof - Google Patents

Mems sensor packaging structure and fabricating method thereof Download PDF

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Publication number
WO2018121289A1
WO2018121289A1 PCT/CN2017/116439 CN2017116439W WO2018121289A1 WO 2018121289 A1 WO2018121289 A1 WO 2018121289A1 CN 2017116439 W CN2017116439 W CN 2017116439W WO 2018121289 A1 WO2018121289 A1 WO 2018121289A1
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WIPO (PCT)
Prior art keywords
sensor
metal
electrically connected
pad
connection structure
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PCT/CN2017/116439
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French (fr)
Chinese (zh)
Inventor
王之奇
王宥军
谢国梁
胡汉青
Original Assignee
苏州晶方半导体科技股份有限公司
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Priority claimed from CN201611264764.7A external-priority patent/CN106517085B/en
Priority claimed from CN201621483484.0U external-priority patent/CN206417860U/en
Application filed by 苏州晶方半导体科技股份有限公司 filed Critical 苏州晶方半导体科技股份有限公司
Publication of WO2018121289A1 publication Critical patent/WO2018121289A1/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate

Definitions

  • the application date is 2016-12-30, the application number is 201611264764.7, and the invention name is “MEMS sensor package structure and its forming method”;
  • the application date is 2016-12-30, the application number is 201621483484.0, and the invention name is “MEMS sensor package structure”.
  • the present invention relates to the field of semiconductor technologies, and in particular, to a MEMS sensor package structure and a method of forming the same.
  • MEMS Micro-Electro-Mechanical-System
  • MEMS acceleration sensors are a device for detecting acceleration
  • MEMS gyroscope sensor is a device for detecting acceleration
  • MEMS magnetic sensor is a device for measuring a magnetic field in a space.
  • MEMS accelerometers MEMS gyro sensors and MEMS magnetic sensors have been applied in mobile phones or automotive electronics.
  • MEMS accelerometers, MEMS gyroscope sensors and MEMS magnetic sensors are designed separately and then packaged separately. . Since various sensors are separately designed and packaged independently, the existing MEMS devices are bulky and costly.
  • the problem solved by the present invention is how to reduce the volume of the MEMS device and realize an integrated package of the acceleration sensor, the gyro sensor and the magnetic induction sensor.
  • the technical solution of the present invention provides a method for forming a MEMS sensor package structure, including:
  • the gyro sensor and the acceleration sensor are respectively mounted on the first surface of the substrate, and the first external pad of the gyro sensor is electrically connected to the interconnection through the first metal connection structure, and the second external pad of the acceleration sensor passes through the second metal
  • the connection structure is electrically connected to the interconnection line; the magnetic induction sensor is mounted on the second surface of the substrate, and the third external connection pad of the magnetic induction sensor is electrically connected to the interconnection through the third metal connection structure
  • the interconnection line includes a first interconnection line and a second interconnection line in the substrate, and a metal circuit layer on the second surface, the first interconnection line, the second interconnection line, and the metal
  • the circuit layers are insulated from each other, and the first external pads of the gyro sensor are electrically connected to the first interconnection through the first metal connection structure, and the second external pads of the acceleration sensor are electrically connected to the second interconnection through the second metal connection structure Connecting, the third external pad of the magnetic induction sensor is electrically connected to the metal circuit layer through the third metal connection structure; forming a plurality of solder bumps on the second surface of the substrate, the welder protrusion including the first solder bump a second solder bump and a third solder bump, the first solder bump is electrically connected to the first interconnecting line, the second solder bump is electrically connected to the second interconnecting line, and the third solder bump is connected to the metal
  • the circuit layer is electrically connected.
  • the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure and the second metal connection structure are metal wires, and the two ends of the first metal connection structure are respectively connected to the first external connection
  • the pad is electrically connected to the first interconnecting line, and a middle portion of the first metal connecting structure is suspended on both sides of the gyro sensor, and two ends of the second metal connecting structure are electrically connected to the second external pad and the second interconnecting line, respectively The middle portion of the second metal connection structure is suspended on both sides of the acceleration sensor.
  • the method further includes: forming a dispensing layer covering at least the metal wire.
  • the magnetic induction sensor is mounted on the second surface of the substrate; after the magnetic induction sensor is mounted on the second surface of the substrate, forming a plurality on the second surface of the substrate Welding bumps.
  • the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, the first metal connection structure penetrates the back surface and a portion of the thickness of the gyro sensor, and is soldered to the first external surface of the front surface of the gyro sensor.
  • the disk is electrically connected, and the second metal connecting structure penetrates the back surface and the partial thickness of the acceleration sensor, and is electrically connected to the second external pad of the front surface of the acceleration sensor.
  • the gyro sensor and the acceleration sensor are respectively flipped on the first surface of the substrate, the first metal connection structure is located on a surface of the first external connection pad, and the second metal connection structure is located on the second external connection pad s surface.
  • the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the gyro sensor further includes an angular velocity sensing area.
  • the front surface of the gyro sensor has a first sealing cover, and the first sealing cover is sealed.
  • a plurality of first external pads are located on both sides of the first sealing cover;
  • the acceleration sensor further includes an acceleration sensing area, the second surface of the acceleration sensor has a second sealing cover, and the second sealing cover seals the acceleration sensing area,
  • a plurality of second outer pads are located on both sides of the second sealing cover.
  • the magnetic induction sensor is flipped on the second surface of the substrate, the third metal connection structure is located on the surface of the third external connection pad; or the back surface of the magnetic induction sensor is attached to the second surface of the substrate,
  • the three metal connection structure is a metal wire, and the two ends of the third metal connection structure are electrically connected to the third outer pad and the metal layer respectively, and the middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor; or the back of the magnetic induction sensor Attached to the second surface of the substrate, the third metal connection structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor and is electrically connected to the third external connection pad on the front surface of the magnetic induction sensor.
  • the data processing chip is further included, and the data processing chip is electrically connected to the interconnection.
  • the interconnection line includes a third interconnection line and a fourth interconnection line located in the substrate, and a plurality of first metal circuit layers and a plurality of second metal circuit layers on the second surface of the substrate,
  • the three interconnect lines, the fourth interconnect line, the first metal line layer and the second metal line layer are insulated from each other;
  • the first external pad of the gyro sensor is electrically connected to the third interconnect line through the first metal connection structure
  • the second external pad of the acceleration sensor is electrically connected to the fourth interconnection through the second metal connection structure;
  • the third external pad of the magnetic induction sensor is electrically connected to the first metal circuit layer through the third metal connection structure;
  • the data processing chip Mounted on the second surface of the substrate, the data processing chip is electrically connected to the third interconnecting line, the fourth interconnecting line, the first metal wiring layer and the second metal wiring layer;
  • the solder bump is located on the second surface of the substrate The surface of the two metal circuit layers.
  • the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure and the second metal connection structure are metal wires, and the two ends of the first metal connection structure are respectively connected to the first external connection
  • the pad and the third interconnection are electrically connected, and a middle portion of the first metal connection structure is suspended on both sides of the gyro sensor, and two ends of the second metal connection structure are electrically connected to the second external pad and the fourth interconnection line, respectively a middle portion of the second metal connection structure is suspended on both sides of the acceleration sensor;
  • the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure penetrates the back surface and the portion of the gyro sensor a thickness and electrically connected to the first external pad of the front surface of the gyro sensor, the second metal connection structure penetrating through the back surface and the partial thickness of the acceleration sensor, and electrically connected to the second external pad of the front surface
  • the method further comprises: forming a glue covering at least the metal wire Floor.
  • the signal processing chip is flipped on the second surface of the substrate; or the back surface of the signal processing chip is attached to the second surface of the substrate, and the signal processing chip passes through the metal wire and the third interconnection
  • the fourth interconnecting line and the second metal wiring layer are electrically connected.
  • the interconnection line includes a fifth interconnection line and a sixth interconnection line located in the substrate, and a plurality of third metal circuit layers and a plurality of fourth metal circuit layers located on the first surface of the substrate, and a fifth The interconnection line, the sixth interconnection line, the third metal circuit layer and the fourth metal circuit layer are insulated from each other;
  • the first external pad of the gyro sensor is electrically connected to the third metal circuit layer through the first metal connection structure, the acceleration sensor
  • the second external pad is electrically connected to the fourth metal circuit layer through the second metal connection structure;
  • the third external connection pad of the magnetic induction sensor is electrically connected to the fifth interconnection line through the third metal connection structure;
  • the data processing chip is mounted on the substrate a first surface, the data processing chip is electrically connected to the third metal circuit layer, the fourth metal circuit layer, the fifth interconnection, and the sixth interconnection;
  • the interconnection further includes a second surface on the substrate a plurality of fifth metal circuit layers, the fifth metal circuit layer is electrically connected to
  • the method further includes a first data processing chip, a second data processing chip, and a third data processing chip, the first data processing chip is electrically connected to the gyro sensor, and the second data processing chip is electrically connected to the acceleration sensor The third data processing chip is electrically connected to the magnetic induction sensor.
  • the interconnection line includes a first interconnection line and a second interconnection line in the substrate, and a metal circuit layer on the second surface of the substrate;
  • the first external connection pad of the gyro sensor passes the a metal connection structure is electrically connected to the first interconnection line, and the second external connection pad of the acceleration sensor is electrically connected to the second interconnection line through the second metal connection structure;
  • the third external connection pad of the magnetic induction sensor passes through the third metal connection structure Electrically connecting with the metal circuit layer; forming a solder bump on the second surface of the substrate, the solder bump including the first solder bump, the second solder bump and the third solder bump, the first solder bump and the first The interconnection line is electrically connected, the second solder bump is electrically connected to the second interconnecting line, and the third solder bump is electrically connected to the metal wiring layer.
  • the front surface of the gyro sensor has a plurality of first internal pads and a first external pad
  • the first data processing chip is located on the front surface of the gyro sensor, the first data processing chip and the first internal pad and the first The external pad is electrically connected.
  • the front surface of the acceleration sensor has a plurality of second internal pads and a second external pad.
  • the second data processing chip is located on the front surface of the acceleration sensor, and the second data processing chip is connected to the second internal pad and the second external connection.
  • the pad is electrically connected, the front surface of the magnetic induction sensor has a third inner pad and a third outer pad, the third data processing chip is located on the front surface of the magnetic induction sensor, and the third data processing chip and the third inner pad and the third outer pad Electrical connection.
  • the first data processing chip includes a front surface and an opposite back surface, and the front surface of the first data processing chip has an input pad and an output pad, and the input pad of the first data processing chip is connected through the fourth metal
  • the structure is electrically connected to the first internal pad
  • the output pad of the first data processing chip is electrically connected to the first external pad through a fifth metal connection structure
  • the second data processing chip includes a front surface and an opposite back surface
  • the disk and the output pad are located on the front side of the second data processing chip
  • the input pad of the second data processing chip is electrically connected to the second internal pad through the sixth metal connection structure
  • the output pad of the second data processing chip passes the seventh
  • the metal connection structure is electrically connected to the second external processing pad
  • the third data processing chip includes a front surface and an opposite back surface
  • the input pad and the output pad are located on the front side of the third data processing chip
  • the input processing of the third data processing chip The disk is electrically connected to the third internal pad through the eighth metal connection
  • the back surface of the first data processing chip is attached to the front surface of the gyro sensor
  • the back surface of the second data processing chip is attached to the front surface of the acceleration sensor
  • the back surface of the third data processing chip is attached to the magnetic induction sensor.
  • Front side; or the first data processing chip is flipped on the front side of the gyro sensor
  • the second data processing chip is flipped on the front side of the acceleration sensor
  • the third data processing chip is flipped on the front side of the magnetic induction sensor on-.
  • the back surface of the first data processing chip is attached to the front surface of the gyro sensor
  • the back surface of the second data processing chip is attached to the front surface of the acceleration sensor
  • the back surface of the third data processing chip is attached to the magnetic induction sensor.
  • the front side of the first data processing chip, the second data processing chip, and the third data processing chip form a groove.
  • the gyro sensor is a three-axis gyro sensor
  • the acceleration sensor is a three-axis acceleration sensor
  • the magnetic induction sensor is a three-axis magnetic induction sensor.
  • the invention also provides a MEMS sensor package structure, comprising:
  • a substrate including a first surface and an opposite second surface, the substrate having interconnection lines; a gyro sensor, an acceleration sensor, and a magnetic induction sensor, the gyro sensor, the acceleration sensor, and the magnetic induction sensor each including a front surface and a relative
  • the front surface of the gyro sensor includes a plurality of first external pads, the front surface of the acceleration sensor includes a plurality of second external pads, and the front surface of the magnetic induction sensor includes a plurality of third external pads;
  • the gyroscope The sensor and the acceleration sensor are mounted on the first surface of the substrate, and the first external pad of the gyro sensor is electrically connected to the interconnection through the first metal connection structure, and the second external connection pad of the acceleration sensor passes through the second metal connection structure and Connecting the magnetic connection sensor; the magnetic induction sensor is mounted on the second surface of the substrate; the third external connection pad of the magnetic induction sensor is electrically connected to the interconnection through the third metal connection structure; and a plurality
  • the interconnection line includes a first interconnection line and a second interconnection line in the substrate, and a metal circuit layer on the second surface, the first interconnection line, the second interconnection line, and the metal
  • the circuit layers are insulated from each other, and the first external pads of the gyro sensor are electrically connected to the first interconnection through the first metal connection structure, and the second external pads of the acceleration sensor are electrically connected to the second interconnection through the second metal connection structure Connecting, the third external pad of the magnetic induction sensor is electrically connected to the metal circuit layer through the third metal connection structure; a plurality of solder bumps on the second surface of the substrate, the welder protrusion including the first solder bump, the second a solder bump and a third solder bump, the first solder bump is electrically connected to the first interconnecting line, the second solder bump is electrically connected to the second interconnecting line, and the third solder bump is electrically connected to the metal wiring layer connection.
  • the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure and the second metal connection structure are metal wires, and the two ends of the first metal connection structure are respectively connected to the first external connection
  • the pad is electrically connected to the first interconnecting line, and a middle portion of the first metal connecting structure is suspended on both sides of the gyro sensor, and two ends of the second metal connecting structure are electrically connected to the second external pad and the second interconnecting line, respectively a middle portion of the second metal connection structure is suspended on both sides of the acceleration sensor; or the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure penetrates the back surface and the portion of the gyro sensor a thickness and electrically connected to the first external pad of the front surface of the gyro sensor, the second metal connection structure penetrating through the back surface and the partial thickness of the acceleration sensor, and electrically connected to the second external pad of the
  • the method further includes: sealing at least the dispensing layer of the metal wire.
  • the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the gyro sensor further includes an angular velocity sensing area.
  • the front surface of the gyro sensor has a first sealing cover, and the first sealing cover is sealed.
  • a plurality of first external pads are located on both sides of the first sealing cover;
  • the acceleration sensor further includes an acceleration sensing area, the second surface of the acceleration sensor has a second sealing cover, and the second sealing cover seals the acceleration sensing area,
  • a plurality of second outer pads are located on both sides of the second sealing cover.
  • the magnetic induction sensor is flipped on the second surface of the substrate, the third metal connection structure is located on the surface of the third external connection pad; or the back surface of the magnetic induction sensor is attached to the second surface of the substrate,
  • the three metal connection structure is a metal wire, and two ends of the third metal connection structure are respectively electrically connected to the third external pad and the metal circuit layer, and a middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor; or the magnetic induction sensor
  • the back surface is adhered to the second surface of the substrate, and the third metal connecting structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor and is electrically connected to the third external pad of the front surface of the magnetic induction sensor.
  • the data processing chip is further included, and the data processing chip is electrically connected to the interconnection.
  • the interconnection line includes a third interconnection line and a fourth interconnection line located in the substrate, and a plurality of first metal circuit layers and a plurality of second metal circuit layers on the second surface of the substrate,
  • the three interconnect lines, the fourth interconnect line, the first metal line layer and the second metal line layer are insulated from each other;
  • the first external pad of the gyro sensor is electrically connected to the third interconnect line through the first metal connection structure
  • the second external pad of the acceleration sensor is electrically connected to the fourth interconnection through the second metal connection structure;
  • the third external pad of the magnetic induction sensor is electrically connected to the first metal circuit layer through the third metal connection structure;
  • the data processing chip Mounted on the second surface of the substrate, the data processing chip is electrically connected to the third interconnecting line, the fourth interconnecting line, the first metal wiring layer and the second metal wiring layer;
  • the solder bump is located on the second surface of the substrate The surface of the two metal circuit layers is electrically connected to the second metal circuit layer.
  • the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure and the second metal connection structure are metal wires, and the two ends of the first metal connection structure are respectively connected to the first external connection
  • the pad and the third interconnection are electrically connected, and a middle portion of the first metal connection structure is suspended on both sides of the gyro sensor, and two ends of the second metal connection structure are electrically connected to the second external pad and the fourth interconnection line, respectively a middle portion of the second metal connection structure is suspended on both sides of the acceleration sensor;
  • the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure penetrates the back surface and the portion of the gyro sensor a thickness and electrically connected to the first external pad of the front surface of the gyro sensor, the second metal connection structure penetrating through the back surface and the partial thickness of the acceleration sensor, and electrically connected to the second external pad of the front surface
  • the signal processing chip is flipped on the second surface of the substrate; or the back surface of the signal processing chip is attached to the second surface of the substrate, and the signal processing chip passes through the metal wire and the third interconnection line, The fourth interconnect line and the second metal line layer are electrically connected.
  • the interconnection line includes a fifth interconnection line and a sixth interconnection line located in the substrate, and a plurality of third metal circuit layers and a plurality of fourth metal circuit layers located on the first surface of the substrate, and a fifth The interconnection line, the sixth interconnection line, the third metal circuit layer and the fourth metal circuit layer are insulated from each other;
  • the first external pad of the gyro sensor is electrically connected to the third metal circuit layer through the first metal connection structure, the acceleration sensor
  • the second external pad is electrically connected to the fourth metal circuit layer through the second metal connection structure;
  • the third external connection pad of the magnetic induction sensor is electrically connected to the fifth interconnection line through the third metal connection structure;
  • the data processing chip is mounted on the substrate a first surface, the data processing chip is electrically connected to the third metal circuit layer, the fourth metal circuit layer, the fifth interconnection, and the sixth interconnection;
  • the interconnection further includes a second surface on the substrate a plurality of fifth metal circuit layers, the fifth metal circuit layer is electrically connected to
  • the method further includes a first data processing chip, a second data processing chip, and a third data processing chip, the first data processing chip is electrically connected to the gyro sensor, and the second data processing chip is electrically connected to the acceleration sensor The third data processing chip is electrically connected to the magnetic induction sensor.
  • the interconnection line includes a first interconnection line and a second interconnection line in the substrate, and a metal circuit layer on the second surface of the substrate;
  • the first external connection pad of the gyro sensor passes the a metal connection structure is electrically connected to the first interconnection line, and the second external connection pad of the acceleration sensor is electrically connected to the second interconnection line through the second metal connection structure;
  • the third external connection pad of the magnetic induction sensor passes through the third metal connection structure Electrically connecting with the metal circuit layer; a plurality of solder bumps on the second surface of the substrate, the solder bumps including the first solder bumps, the second solder bumps, and the third solder bumps, the first solder bumps and the first solder bumps
  • An interconnecting line is electrically connected, the second soldering bump is electrically connected to the second interconnecting strip, and the third soldering bump is electrically connected to the metal wiring layer.
  • the front surface of the gyro sensor has a plurality of first internal pads and a first external pad
  • the first data processing chip is located on the front surface of the gyro sensor, the first data processing chip and the first internal pad and the first The external pad is electrically connected.
  • the front surface of the acceleration sensor has a plurality of second internal pads and a second external pad.
  • the second data processing chip is located on the front surface of the acceleration sensor, and the second data processing chip is connected to the second internal pad and the second external connection.
  • the pad is electrically connected, the front surface of the magnetic induction sensor has a third inner pad and a third outer pad, the third data processing chip is located on the front surface of the magnetic induction sensor, and the third data processing chip and the third inner pad and the third outer pad Electrical connection.
  • the first data processing chip includes a front surface and an opposite back surface, and the front surface of the first data processing chip has an input pad and an output pad, and the input pad of the first data processing chip is connected through the fourth metal
  • the structure is electrically connected to the first internal pad
  • the output pad of the first data processing chip is electrically connected to the first external pad through a fifth metal connection structure
  • the second data processing chip includes a front surface and an opposite back surface
  • the disk and the output pad are located on the front side of the second data processing chip
  • the input pad of the second data processing chip is electrically connected to the second internal pad through the sixth metal connection structure
  • the output pad of the second data processing chip passes the seventh
  • the metal connection structure is electrically connected to the second external processing pad
  • the third data processing chip includes a front surface and an opposite back surface
  • the input pad and the output pad are located on the front side of the third data processing chip
  • the input processing of the third data processing chip The disk is electrically connected to the third internal pad through the eighth metal connection
  • the back surface of the first data processing chip is attached to the front surface of the gyro sensor
  • the back surface of the second data processing chip is attached to the front surface of the acceleration sensor
  • the back surface of the third data processing chip is attached to the magnetic induction sensor.
  • Front side; or the first data processing chip is flipped on the front side of the gyro sensor
  • the second data processing chip is flipped on the front side of the acceleration sensor
  • the third data processing chip is flipped on the front side of the magnetic induction sensor on.
  • the back sides of the first data processing chip, the second data processing chip, and the third data processing chip form a recess.
  • the gyro sensor is a three-axis gyro sensor
  • the acceleration sensor is a three-axis acceleration sensor
  • the magnetic induction sensor is a three-axis magnetic induction sensor.
  • the packaging method and the package structure of the invention make the gyro sensor, the acceleration sensor and the magnetic induction touch sensor integrated in one MEMS package structure, which reduces the volume of the MEMS package structure and improves the integration degree. Moreover, since the magnetic induction touch sensor is sensitive to magnetic materials, the magnetic induction touch sensor is mounted on different surfaces of the substrate relative to the gyro sensor and the acceleration sensor, so that the magnetic induction touch sensor is not interfered by the gyro sensor and the acceleration sensor, thereby improving Detection accuracy of MEMS package structure.
  • a metal circuit layer is formed on the second surface of the substrate, and the magnetic induction sensor is flipped on the second surface of the substrate and electrically connected to the metal circuit layer through the third metal connection structure, so that the back side of the magnetic induction sensor is on the substrate.
  • the thickness of the two surfaces is small, and when the solder bumps are formed on the second surface of the substrate, the height of the solder bumps can be small, which is advantageous for reducing the process difficulty of solder bump formation and reducing the volume of the entire package structure.
  • first metal connection structure or the back surface and part of the thickness of the gyro sensor are electrically connected to the first external pad of the front surface of the gyro sensor
  • second metal connection structure or the back surface and part of the thickness of the acceleration sensor are The second external pad of the front surface of the acceleration sensor is electrically connected, and the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, so that the first metal connection structure is electrically connected to the first interconnection line, so that the second metal connection structure
  • the connection manner electrically connected to the second interconnection line makes the thickness between the gyro sensor and the acceleration sensor and the first surface of the substrate small, which is advantageous for reducing the volume of the package structure.
  • first metal connection structure is formed on the surface of the first external pad of the gyro sensor
  • second metal connection structure is formed on the surface of the first external pad of the acceleration sensor, so that the gyro sensor and the acceleration sensor can be flipped separately Connecting to the first interconnecting line and the second interconnecting line on the first surface of the substrate respectively reduces the process difficulty and facilitates reducing the volume of the package structure.
  • the third metal connection structure or the back surface and the partial thickness of the magnetic induction sensor are electrically connected to the third external pad of the front surface of the magnetic induction sensor, and the back surface of the magnetic induction sensor is attached to the second surface of the substrate, and the magnetic induction sensor is reduced. Simultaneously with the thickness of the second surface of the first substrate, the magnetic sensing region of the magnetic induction sensor can be moved away from the gyro sensor and the acceleration touch sensor on the first surface of the substrate, and the magnetic induction sensor is improved while reducing the volume of the package structure. Detection accuracy.
  • the package structure and the packaging method of the present invention realize an integrated package of a data processing chip and a gyro sensor, an acceleration sensor and a magnetic induction sensor, which reduces the volume of the package structure, and the data processing chip can measure the gyro sensor and the acceleration
  • the signals sensed by the sensor and the magnetic induction sensor are processed and the processed signal is transmitted from the solder bump.
  • the data processing chip and the gyro sensor and the acceleration sensor are both packaged on the first surface of the substrate, and the magnetic induction sensor is packaged on the second surface of the substrate to implement a data processing chip and the gyroscope
  • the integrated package of the sensor, the acceleration sensor and the magnetic induction sensor reduces the volume of the package structure, and the data processing chip can process signals induced by the gyro sensor, the acceleration sensor and the magnetic induction sensor, and the processed signal is soldered
  • the bump is transmitted, and at the same time, since the data processing chip and the gyro sensor and the acceleration sensor are both packaged on the first surface of the substrate, and the magnetic induction sensor is packaged on the second surface of the substrate, the solder bump formed on the second surface of the substrate is more favorable.
  • the layout is transmitted, and at the same time, since the data processing chip and the gyro sensor and the acceleration sensor are both packaged on the first surface of the substrate, and the magnetic induction sensor is packaged on the second surface of the substrate, the solder bump
  • the package structure and the packaging method of the invention realize integrated packaging of the gyro sensor module, the acceleration sensor module, and the magnetic induction sensor module, reduce the volume of the package structure, and the first data processing chip, the second data processing chip and the third data
  • the processing chip can separately process the signals sensed by the corresponding gyro sensor, the acceleration sensor, and the magnetic induction sensor, thereby improving the processing efficiency, and passing the processed signal through the first solder bump, the second solder bump, and the third Welding bump output.
  • FIG. 1 is a schematic structural view showing a process of forming a MEMS sensor package structure according to a first embodiment of the present invention
  • FIG. 1 is a schematic view of a substrate
  • FIG. 2 is a schematic diagram of a gyro sensor
  • FIG. 4 is a schematic view of a magnetic induction sensor
  • FIG. 5 is a schematic view showing the mounting of the gyro sensor and the acceleration sensor to the substrate
  • FIG. 6 is a schematic view showing the metal circuit layer on the second surface of the substrate in FIG. 5
  • FIG. 8 is a schematic view showing the arrangement of the solder bumps in FIG. 7;
  • FIG. 1 is a schematic structural view showing a process of forming a MEMS sensor package structure according to a first embodiment of the present invention
  • FIG. 1 is a schematic view of a substrate
  • FIG. 2 is a schematic diagram of a gyro sensor
  • FIG. 4 is a schematic view of a magnetic induction sensor
  • FIG. 5 is a
  • FIG. 9 to FIG. 14 are schematic structural views showing a process of forming a MEMS sensor package structure according to a second embodiment of the present invention.
  • FIG. 9 is a schematic diagram of a gyro sensor
  • FIG. 10 is a schematic diagram of an acceleration sensor
  • FIG. 12 is a schematic diagram of another type of gyro sensor
  • FIG. 13 is a schematic diagram of the gyro sensor and the acceleration sensor mounted on the substrate in FIGS. 9 and 10
  • FIG. 14 is a gyro sensor in FIGS. a schematic diagram of the acceleration sensor mounted to the substrate;
  • FIG. 15 to FIG. 17 are schematic structural views showing a process of forming a MEMS sensor package structure according to a third embodiment of the present invention.
  • FIG. 15 is a schematic diagram of a gyro sensor
  • FIG. 16 is a schematic diagram of an acceleration sensor
  • And 16 schematic diagrams of the gyro sensor and the acceleration sensor mounted on the substrate;
  • FIG. 18 to FIG. 21 are schematic diagrams showing the structure of a MEMS sensor package structure according to a fourth embodiment of the present invention.
  • FIG. 18 is a schematic diagram of a magnetic induction sensor;
  • FIG. 19 is a schematic diagram of another magnetic induction sensor;
  • FIG. 21 is a schematic view showing the mounting of the magnetic induction sensor to the substrate in FIG. 19;
  • FIG. 18 is a schematic diagram of a magnetic induction sensor package structure according to a fourth embodiment of the present invention.
  • FIG. 18 is a schematic diagram of a magnetic induction sensor
  • FIG. 19 is a schematic diagram of another magnetic induction sensor
  • FIG. 21 is a schematic view showing the mounting of the magnetic induction sensor to the substrate in FIG. 19;
  • FIG. 21 is a schematic view showing the mounting of the magnetic induction sensor to the substrate in FIG. 19;
  • FIGS. 22 to FIG. 23 are schematic structural diagrams showing a process of forming a MEMS sensor package structure according to a fifth embodiment of the present invention. wherein, the substrate in FIGS. 22 and 23 is further provided with a data processing chip;
  • FIGS. 24 to FIG. 25 are schematic structural diagrams showing a process of forming a MEMS sensor package structure according to a sixth embodiment of the present invention. wherein, the substrate of FIGS. 24 and 25 is further provided with a data processing chip, and the gyro sensor and the acceleration sensor are both located on the substrate. a surface
  • FIG. 26 to 37 are structural diagrams showing a process of forming a MEMS sensor package structure according to a seventh embodiment of the present invention.
  • FIG. 26 is a schematic diagram of a first type of gyro sensor module
  • FIG. 27 is a schematic diagram of a first type of acceleration sensor module
  • 28 is a schematic diagram of a first type of magnetic induction sensor module
  • FIG. 29 is a schematic diagram of a second type of gyro sensor module
  • FIG. 30 is a schematic diagram of a second type of acceleration sensor module
  • FIG. 31 is a schematic diagram of a second type of magnetic induction sensor module
  • FIG. 33 is a schematic diagram of a third type of acceleration sensor module
  • FIG. 34 is a schematic diagram of a third type of magnetic induction sensor module
  • FIGS. 35-37 are three kinds of gyro sensors, acceleration sensors, A schematic diagram of a magnetic induction sensor module mounted on a substrate.
  • the current MEMS accelerometers, MEMS gyroscope sensors, and MEMS magnetic inductive sensors are separately designed and then packaged separately. Since various sensors are separately designed and packaged independently, the existing MEMS are made. The device is bulky and costly.
  • the present invention provides a method for extremely forming a MEMS sensor package structure, which realizes an integrated package of an acceleration sensor, a gyro sensor and a magnetic induction sensor, and reduces the volume of the package structure.
  • FIG. 1 is a schematic structural view showing a process of forming a MEMS sensor package structure according to a first embodiment of the present invention.
  • a substrate 100 that includes a first surface 101 and an opposite second surface 102, the substrate 100 having interconnecting lines.
  • the interconnect line includes a first interconnect line 103 and a second interconnect line 104 located in the substrate 100.
  • the first interconnect line 103 and the second interconnect line 104 are used to direct electrical connection points of the first surface 101 of the substrate 100 to the second surface 102 of the substrate 100.
  • the first interconnection line 103 subsequently realizes that the gyro sensor mounted on the first surface 101 of the substrate 100 is electrically connected to the solder bump formed on the second surface 102 of the substrate 100, and the second interconnection line 104 is subsequently followed.
  • An electrical connection electrically connected to the solder bumps formed on the second surface 102 of the acceleration sensor substrate 100 mounted on the first surface 101 of the substrate 100 is achieved.
  • the substrate 100 may be one of a printed wiring board, a BT (Bismaleimide Triazine) resin substrate, or a semiconductor substrate.
  • the semiconductor substrate may be a silicon substrate, a germanium substrate, a silicon germanium substrate, or other suitable semiconductor material substrate.
  • the substrate 100 when the substrate 100 is a printed wiring board or a BT (Bismaleimide Triazine) resin substrate, the substrate may be a single layer or a multi-layer stacked structure, and the first interconnecting lines 103 and second are corresponding. Interconnect lines 104 can also be a single layer or multi-layer stack structure. When the first interconnection line 103 and the second interconnection line 104 are a multi-layer stacked structure, the first interconnection line 103 and the second interconnection line 104 may include a plurality of metal wiring layers and adjacent layers. Metal plug or via connection structure interconnected by metal circuit layers.
  • the first interconnect line 103 and the second interconnect line 104 may include a via interconnect structure penetrating the semiconductor substrate and a first surface of the semiconductor substrate And/or a rewiring metal wiring layer electrically connected to the via interconnect structure on the second surface.
  • the number of the first interconnecting lines 103 and the second interconnecting lines 104 is plural ( ⁇ 2), and the different first interconnecting lines 103 and/or the second interconnecting lines 104 are isolated from each other. And insulated from each other.
  • the number of the first interconnection lines 103 is the same as the number of the first external connection pads on the subsequently mounted gyro sensor
  • the number of the second interconnection lines 104 is the same as that of the subsequently installed acceleration sensor.
  • the number of the two external pads is the same.
  • a gyro sensor 21, an acceleration sensor 31, and a magnetic induction sensor 41 are provided.
  • the gyro sensor 21 includes a plurality of first external pads 202
  • the acceleration sensor 31 includes a plurality of second external solders.
  • the disk 302, the magnetic induction sensor 41 includes a plurality of third external pads 402.
  • the gyro sensor 21 is used to detect the angular velocity of an object such as a mobile phone or a car, that is, the gyro sensor 21 can sense the acceleration of the object to generate an electrical signal.
  • the gyro sensor 21 includes an angular velocity sensing region 201 and a first external pad 202 located around the angular velocity sensing region 201.
  • the angular velocity sensing region 201 is configured to sense an acceleration of an object to generate an electrical signal.
  • the first external pad 202 serves as an electrical connection point for electrical signal transmission between the gyro sensor 21 and an external chip or circuit.
  • An associated circuit (not shown) is further formed in the gyro sensor 21, and the associated circuit electrically connects the angular velocity sensing area 201 with the first external pad 202, and the electrical signal induced by the angular velocity sensing area 201 can pass through the associated circuit. Transfer to the first external pad 202.
  • the gyro sensor 21 has a first sealing cover 210 on the front surface thereof, the first sealing cover 210 seals the angular velocity sensing area 201, and a plurality of first external bonding pads 202 are located on opposite sides of the first sealing cover 210.
  • the first sealing cover 210 seals the angular velocity sensing area 201, prevents damage of the angular velocity sensing area 201 during the subsequent packaging process, or prevents moisture and corrosion during use, and the plurality of first external pads 202 are located on the first sealing cover 210.
  • the material of the first sealing cover 210 may be silicon, glass or ceramic, and may be formed on the front surface of the gyro sensor 21 by an adhesive layer bonding or bonding process.
  • the number of the first external pads 202 is plural (two or more), and some of the first external pads can transmit induced electrical signals, and some of the first external pads can receive external control signals or power signals.
  • the gyro sensor 21 includes a front surface and an opposite back surface, and the first outer pad 21 and the angular velocity sensing region 201 are located on the front surface of the gyro sensor 21.
  • the acceleration sensor 31 is for detecting the acceleration of an object such as a mobile phone or a car, i.e., the acceleration sensor 31 can sense the acceleration of the object to generate an electrical signal.
  • the acceleration sensor 31 includes an acceleration sensing area 301 and a second external bonding pad 302 located around the acceleration sensing area 301.
  • the acceleration sensing area 301 is configured to sense an acceleration of an object to generate an electrical signal.
  • the second external pad 302 serves as an electrical connection point for the electrical signal transmission of the acceleration sensor 31 and an external chip or circuit.
  • An associated circuit (not shown) is further formed in the acceleration sensor 31. The associated circuit electrically connects the acceleration sensing area 301 and the second external pad 302. The electrical signal induced by the acceleration sensing area 301 can be transmitted through the associated circuit. To the second external pad 302.
  • the acceleration sensor 301 has a second sealing cover 310 on the front surface thereof, and the second sealing cover 310 seals the acceleration sensing area 301, and the plurality of second external bonding pads 302 are located on both sides of the second sealing cover 310.
  • the second sealing cover 310 seals the acceleration sensing area 301 to prevent damage of the acceleration sensing area 301 or moisture and corrosion during use in the subsequent packaging process, and the plurality of second external pads 302 are located on both sides of the second sealing cover 310.
  • the presence of the second sealing cover 310 does not affect the subsequent packaging process.
  • the material of the second sealing cover 310 may be silicon, glass or ceramic, and may be formed on the front surface of the acceleration sensor 301 by an adhesive layer bonding or bonding process.
  • the acceleration sensor 31 and the gyro sensor 21 each include a front surface and an opposite back surface. Specifically, in this embodiment, the second outer contact pad 302 and the acceleration sensing region 301 are located on the front surface of the acceleration sensor 31. An external pad 202 and an angular velocity sensing area 201 are located on the front side of the gyro sensor 21.
  • the magnetic induction sensor 41 is used to detect the magnetic field of an object such as a mobile phone or a car, that is, the magnetic induction sensor 41 can sense the acceleration of the object to generate an electrical signal.
  • the magnetic induction sensor 41 includes a magnetic field sensing region 401 and a third external bonding pad 402 located around the magnetic field sensing region 401.
  • the magnetic field sensing region 401 is configured to sense an acceleration of an object to generate an electrical signal.
  • the third external pad 402 serves as an electrical connection point for the electrical signal transmission between the magnetic induction sensor 41 and an external chip or circuit.
  • An associated circuit (not shown) is further formed in the magnetic induction sensor 41. The associated circuit electrically connects the magnetic field sensing area 401 and the third external bonding pad 402, and the electrical signal induced by the magnetic field sensing area 401 can be transmitted through the associated circuit. Go to the third external pad 402.
  • the number of the third external pads 402 is plural (two or more), some of the third external pads can transmit induced electrical signals, and some of the third external pads can receive external control signals or power signals.
  • the magnetic induction sensor 41 includes a front surface and an opposite back surface, and the third external contact pad 41 and the magnetic field sensing region 401 are located on the front surface of the magnetic induction sensor 41.
  • the gyro sensor 21 can be a single-axis or multi-axis ( ⁇ 2 axis) gyro sensor.
  • the three-axis gyro sensor can be used to sense three.
  • the angular velocity of the directions, the three directions refer to a first direction, a second direction, and a third direction, the first direction being perpendicular to the second direction, and the third direction being perpendicular to a plane in which the first direction and the second direction are located.
  • the acceleration sensor 31 may be a single-axis or multi-axis ( ⁇ 2 axis) acceleration sensor.
  • the three-axis acceleration sensor may be used to sense acceleration in three directions.
  • the three directions refer to a first direction, a second direction, and a third direction, the first direction being perpendicular to the second direction, and the third direction being perpendicular to a plane in which the first direction and the second direction are located.
  • the magnetic induction sensor 41 can be a single-axis or multi-axis ( ⁇ 2 axis) acceleration sensor.
  • the magnetic induction sensor 41 when the magnetic induction sensor 41 is a three-axis magnetic induction sensor, the three-axis magnetic induction sensor can be used to sense magnetic fields in three directions.
  • the three directions refer to a first direction, a second direction, and a third direction, the first direction being perpendicular to the second direction, and the third direction being perpendicular to a plane in which the one direction and the second direction are located.
  • the gyro sensor 21 and the acceleration sensor 31 are respectively mounted on the first surface 101 of the substrate 100, and the first external pad 202 of the gyro sensor 21 is electrically connected to the first interconnection 103 through the first metal connection structure 109. Connected, the second external pad 302 of the acceleration sensor 31 is electrically coupled to the second interconnect 104 via the second metal connection 108.
  • the back surfaces of the gyro sensor 21 and the acceleration sensor 31 are attached to the first surface of the substrate 100.
  • the back surfaces of the gyro sensor 21 and the acceleration sensor 31 are bonded to the first substrate 100 through the adhesive layers 105 and 106. surface.
  • the material of the adhesive layer 308 is epoxy resin glue, polyimide glue, benzocyclobutene glue or polybenzoxazole glue.
  • the forming process by the adhesive layers 105, 106 may be: forming a layer of adhesive material on the first surface 101 of the substrate 100 by a filming process, a printing process, or a roll-on process, and bonding the layer of adhesive material through exposure and development processes.
  • adhesive layers 105, 106 are formed on the substrate, and the size and position of the adhesive layers 105, 106 are attached to the size of the back surface of the gyro sensor 21 and the acceleration sensor 31, and the gyro sensor 21 and the acceleration sensor 31 are attached.
  • the positions on the first surface 31 of the substrate 300 correspond.
  • the first metal connection structure 109 and the second metal connection structure 108 are metal wires, and two ends of the first metal connection structure 109 are electrically connected to the first outer pad 202 and the first interconnection line 103, respectively.
  • a middle portion of a metal connection structure 109 is suspended on both sides of the gyro sensor 21, and two ends of the second metal connection structure 108 are electrically connected to the second outer contact pad 302 and the second interconnection line 104, respectively, and the second metal connection structure 108 The middle portion is suspended on both sides of the acceleration sensor 31.
  • the first metal connection structure 109 and the second metal connection structure 108 may be formed by a wire bonding process.
  • the back surfaces of the gyro sensor 21 and the acceleration sensor 31 are attached to the first surface of the substrate 100 through the adhesive layers 105, 106, and the first metal connection structure 109 and the second metal connection structure 108 are connected by a wire bonding process.
  • a connection or process can prevent damage to the gyro sensor 21 and the acceleration sensor 31 by other process steps such as a heat treatment process.
  • a glue layer that seals at least the first metal connection structure 109 and the second metal connection structure 108 (metal lines) is formed.
  • the dispensing layer may include a first dispensing layer covering the first metal connecting structure 109 and a second dispensing layer covering the second metal connecting structure 108, and the first dispensing layer and the second dispensing layer are respectively formed.
  • the dispensing layer may also be a unitary structure covering both the first metal connection structure 109 and the second metal connection structure 108.
  • the dispensing layer may cover the first surface 101 of the substrate 100 and the gyro sensor 21 and the acceleration sensor 31 in addition to the first metal connection structure 109 and the second metal connection structure 108, and the dispensing layer has a flat surface.
  • the dispensing layer can be used as a platform to facilitate subsequent processing steps such as mounting the magnetic induction sensor 41 and forming the solder bump on the second surface of the substrate 100.
  • the material of the dispensing layer is a resin (glue), and the forming process is a dispensing process, an injection molding process, or a transformation process.
  • a metal wiring layer 110 is formed on the second surface 102 of the substrate 100.
  • the metal circuit layer 110 is a part of the interconnect structure.
  • the interconnect line includes the first interconnect line 103 and the second interconnect line 104 in the substrate 100, and further includes the substrate 100.
  • the metal wiring layer 110 on the second surface, the first interconnection 103, the second interconnection 104, and the metal wiring layer 110 are insulated from each other.
  • the metal circuit layer 110 is used for subsequent connection with a magnetic induction sensor.
  • the metal circuit layer 100 serves as a first partial metal circuit layer.
  • the second surface 102 of the substrate 100 is also formed on the second surface 102 of the substrate 100 while the metal wiring layer 100 is formed on the second surface 102 of the substrate 100.
  • a second partial metal wiring layer and a third partial metal wiring layer may be formed, the second partial metal wiring layer is electrically connected to the first interconnection line 103, and the third partial metal wiring layer is electrically connected to the second interconnection line 104, the first portion
  • the metal wiring layer, the second partial metal wiring layer, and the third partial metal wiring layer are not electrically connected to each other.
  • the first partial metal wiring layer, the second partial metal wiring layer and the third partial metal wiring layer are simultaneously formed and have the same thickness, and the first partial metal wiring layer is used for guiding the third external bonding pad of the magnetic induction sensor to the substrate.
  • the metal circuit layer and the third portion of the metal circuit layer have the same thickness, such that the heights of the first solder bump, the second solder bump and the third solder bump are kept uniform, and the first solder bump and the second solder bump are reduced.
  • the first partial metal circuit layer, the second partial metal circuit layer and the third partial metal circuit layer are located on the second surface 102 of the substrate 100.
  • the first partial metal circuit layer The second partial metal wiring layer and the third partial metal wiring layer are embedded in the interior of the substrate 100, and the surfaces of the first partial metal wiring layer, the second partial metal wiring layer and the third partial metal wiring layer are flush with the second surface 102 of the substrate 100.
  • the forming process of the first partial metal wiring layer, the second partial metal wiring layer and the third partial metal wiring layer may be performed simultaneously with forming the first interconnection line and the second interconnection line, which is advantageous in simplifying the process steps Reduce the size of the package structure.
  • the step of forming the metal wiring layer 110 is performed before the step of mounting the gyro sensor 21 and the acceleration sensor 31 on the first surface 101 of the substrate 100, respectively, to reduce the formation of the metal wiring layer 110.
  • the process difficulty prevents damage to the gyro sensor 21 and the acceleration sensor 31 when the metal wiring layer 110 is formed.
  • the material of the metal wiring layer 304 may be one or more of W, Al, Cu, Ti, Ag, Au, Pt, and Ni.
  • the metal circuit layer 110 is formed by forming a metal material layer on the second surface 102 of the substrate 100, and the metal material layer may be formed by sputtering; forming a mask layer on the surface of the metal material layer.
  • the mask layer has a plurality of openings exposing the surface of the metal material layer; the mask layer is used as a mask to etch away the exposed metal material layer of the opening, and the remaining metal material layer of the second surface 102 of the substrate 100 a metal circuit layer; the mask layer is removed.
  • the metal wiring layer 110 is formed by forming a dielectric layer on the second surface 102 of the substrate 100, the dielectric layer having a plurality of recesses exposing the second surface 102 of the substrate 100. a trench; a metal wiring layer 110 filled with a recess is formed in the recess, and the filling process is electroplating.
  • the metal wiring layer 110 can also be formed by a printing process.
  • the magnetic induction sensor 41 is mounted on the second surface 102 of the substrate 100, and the third external contact pad 402 of the magnetic induction sensor 41 is electrically connected to the interconnection (metal wiring layer 110) through the third metal connection structure 111.
  • the metal circuit layer 110 is formed on the second surface 102 of the substrate 100, and the magnetic induction sensor 41 is flip-chip mounted on the second surface 102 of the substrate and electrically connected to the metal circuit layer 110 through the third metal connection structure 111.
  • the thickness of the back surface of the magnetic induction sensor 41 to the second surface 102 of the substrate 100 is small.
  • the second surface 102 of the substrate 100 is formed with a solder bump, the height of the solder bump can be small, which is advantageous for reducing the solder bump.
  • the process difficulty is formed and the volume of the entire package structure is reduced.
  • the third metal connection structure 111 is electrically connected to the first part of the metal circuit layer in the metal circuit layer 110.
  • Solder of the material of the third metal connection structure 111, tin, tin silver, tin lead, tin silver copper, tin silver zinc, tin zinc, tin antimonide indium, tin indium, tin gold, tin copper, tin zinc indium or tin silver One or more of metals such as ruthenium.
  • the magnetic induction sensor 41 Since the magnetic induction sensor 41 is flipped on the second surface 102 of the substrate 100, a reflow process (heat treatment process) is required to make the third metal connection structure 111 and the metal wiring layer 110 on the second surface 102 of the substrate 100. Electrically connected, thus, in one embodiment, the magnetic induction sensor 41 is flipped over the second surface 102 of the substrate 100, and the gyro sensor 21 and the acceleration sensor 31 are mounted on the first surface 101 of the substrate 100, respectively. The step before and after the step of forming the metal wiring layer 110 on the second surface 102 of the substrate 100 is performed, thereby preventing damage to the gyro sensor 21 and the acceleration sensor 31 by the reflow process.
  • heat treatment process heat treatment process
  • the method further includes forming a third dispensing layer covering the surface of the magnetic induction sensor 41 and the third metal connecting structure 111 and filling the space of the adjacent third metal connecting structure 111, through the third dispensing layer and the substrate 100.
  • the second surface 102 seals the magnetic field sensing region 401 of the magnetic induction sensor 41, prevents damage to the magnetic field sensing region 401 by the subsequent packaging process, and prevents moisture and corrosion during use, and does not require additional magnetic induction sensors by forming a third dispensing layer.
  • the front surface of the 41 forms a sealing cover, which reduces the volume of the package structure and achieves a sealing function.
  • the material of the third layer of the glue layer is a resin glue, and the forming process is a dispensing process.
  • solder bumps are formed on the second surface 102 of the substrate 100, the solder bumps being electrically connected to the interconnect lines.
  • the solder bump includes a first solder bump 112, a second solder bump 114, and a third solder bump 113.
  • the first solder bump 112 is electrically connected to the first interconnecting line 103, and the second soldering
  • the bump 114 is electrically connected to the second interconnecting line 104, and the third solder bump 113 is electrically connected to the metal wiring layer 110.
  • the first solder bumps 112 are electrically connected to the first interconnecting lines through the second portion of the metal wiring layer, and the second solder bumps 114 pass through the third portion of the metal wiring layer and the second interconnecting lines. Electrically connected, the third solder bump 113 is electrically connected to the metal wiring layer 110 (third portion metal wiring layer).
  • the material of the first solder bump 112, the second solder bump 114 and the third solder bump 113 is solder, and the solder may be tin, tin silver, tin lead, tin silver copper, tin silver zinc, tin zinc One or more of metals such as tin antimonide, tin indium, tin gold, tin copper, tin zinc indium or tin silver crucible.
  • the first solder bumps 112, the second solder bumps 114, and the third solder bumps 113 may be formed by a plating or stencil brushing process.
  • the first solder bumps 112, the second solder bumps 114, and the third solder bumps 113 include metal bumps on the second surface 102 of the substrate 100 and solder on the surface of the metal bumps.
  • the material of the metal bump may be one or more of aluminum, nickel, tin, tungsten, platinum, copper, titanium, chromium, ruthenium, gold, silver; the material of the solder layer may be tin, tin silver, tin One or more of metals such as lead, tin-silver-copper, tin-silver-zinc, tin-zinc, tin-bismuth-indium, tin-indium, stannic, tin-copper, tin-zinc-indium, or tin-silver-tellurium.
  • the first solder bumps 112, the second solder bumps 114, and the third solder bumps 113 serve as ports for communication of the entire MEMS package structure with an external chip or circuit, such that the gyro sensor 21, the acceleration sensor 31, and the magnetic induction touch sensor 41
  • the induced electrical signal can be transmitted through the first solder bump 112, the second solder bump 114, and the third solder bump 113.
  • a molding layer is formed that forms the second surface 102 of the cover substrate 100 and the sidewall portions of the first solder bumps 112, the second solder bumps 114, and the third solder bumps 113.
  • the gyro sensor 21, the acceleration sensor 31, and the magnetic induction touch sensor 41 are integrated in one MEMS package structure by the above method, which reduces the volume of the MEMS package structure and improves the integration degree.
  • the magnetic induction touch sensor 41 is relatively sensitive to magnetic materials, the magnetic induction touch sensor 41 is mounted on different surfaces of the substrate 100 with respect to the gyro sensor 21 and the acceleration sensor 31 in the present invention, so that the magnetic induction touch sensor 41 is not affected by the gyro sensor 21.
  • the interference of the acceleration sensor 31 improves the detection accuracy of the MEMS package structure.
  • FIG. 9 to FIG. 14 are structural diagrams showing a process of forming a MEMS sensor package structure according to a second embodiment of the present invention.
  • the gyro sensor 21 is different from the first interconnection 103, the acceleration sensor 31, and the second interconnection 104.
  • the first metal connection structure 203 or 206 penetrates the back surface and a portion of the thickness of the gyro sensor 21 and is electrically connected to the first external pad 202 on the front surface of the gyro sensor 21, and the second metal connection structure 303 or 306 penetrates the back surface and a portion of the thickness of the acceleration sensor 31, and the acceleration The second external pads 302 on the front side of the sensor 31 are electrically connected.
  • the first metal connection structure 203 is electrically connected to the first interconnection 103.
  • the connection manner of electrically connecting the second metal connection structure 203 and the second interconnection line 104 is such that the thickness between the gyro sensor 21 and the acceleration sensor 31 and the first surface 101 of the substrate 100 is small, which is advantageous for reducing the package.
  • the volume of the structure It should be noted that, in the present embodiment, the forming process and the setting of the same structure or the like are referred to the forming process and the setting of the related structure in the foregoing embodiment, and details are not described in this embodiment.
  • a first metal connection structure 203 or 206 is formed in the gyro sensor 21, and the first metal connection structure 203 or 206 penetrates the back surface and a portion of the thickness of the gyro sensor 21, and the gyro sensor 21
  • the front first outer pads 202 are electrically connected.
  • the first metal connection structure 203 is formed by etching the etched gyro sensor 21 along the back surface and forming a first external solder in the gyro sensor 21 .
  • the first metal connection structure 206 is formed by etching the gyro sensor 21 along the back surface and forming a first external contact pad in the gyro sensor 21 .
  • a first metal connection structure 206 is formed on the wall and bottom surface and a portion of the back surface of the gyro sensor 21; an insulating medium is formed to fill the gap between the remaining recess and the adjacent first metal connection structure 206 on the back surface of the gyro sensor 21.
  • the layer, the surface of the dielectric layer is flush with the surface of the first metal connection 206 on the back side of the gyro sensor 21.
  • the surface of the first metal connection structure 203 or 206 may also form a solder layer.
  • a second metal connection structure 303 or 306 is formed in the acceleration sensor 31, the second metal connection structure 303 or 306 penetrating the back surface and a portion of the thickness of the acceleration sensor 31, and the second surface of the acceleration sensor 31.
  • the external pads 302 are electrically connected.
  • the second metal connection structure 303 is formed by etching the etch acceleration sensor 31 along the back surface and exposing the second external contact pad 302 in the acceleration sensor 31. An etched hole in the bottom surface; the etched hole is filled with metal to form a second metal connection structure 303.
  • the second metal connection structure 306 is formed by etching the acceleration sensor 31 along the back surface and forming a bottom portion of the second external connection pad 302 exposed in the acceleration sensor 31. a groove of the surface; a metal wiring layer is formed on the side wall and the bottom surface of the groove and the back surface of the acceleration sensor 31, and a part of the metal wiring layer on the back surface of the acceleration sensor 31 is etched away, on the side wall and the bottom surface of the groove And forming a second metal connection structure 306 on a portion of the back surface of the acceleration sensor 31; forming an insulating dielectric layer filling the remaining grooves and the gap between adjacent second metal connection structures 306 on the back surface of the acceleration sensor 31, the dielectric layer The surface is flush with the surface of the second metal connection 306 on the back side of the acceleration sensor 31.
  • the surface of the second metal connection structure 303 or 306 may also form a solder layer.
  • the gyro sensor 21 and the acceleration sensor 31 shown in FIGS. 9 and 11 are attached to the first surface 101 of the substrate 100 such that the first metal connection structure 203 is electrically connected to the first interconnection 103.
  • the second metal connection structure 203 is electrically connected to the second interconnection line 104.
  • the bonding process may employ one or a combination of a direct bonding process, a metal diffusion bonding, an anodic bonding, and a solder bonding.
  • the back surface of the gyro sensor 21 and the acceleration sensor 31 shown in FIG. 10 and FIG. 12 are attached to the first surface 101 of the substrate 100 such that the first metal connection structure 203 and the first An interconnect line 103 is electrically connected such that the second metal connection structure 203 is electrically coupled to the second interconnect line 104.
  • the bonding process may employ one or a combination of a direct bonding process, a metal diffusion bonding, an anodic bonding, and a solder bonding.
  • FIG. 15 to FIG. 17 are structural diagrams showing a process of forming a MEMS sensor package structure according to a third embodiment of the present invention.
  • the gyro sensor 21 is different from the first interconnection line, the acceleration sensor 31 and the second interconnection.
  • the first metal connection structure 208 is formed on the gyroscope.
  • the surface of the first outer pad 202 of the sensor 21, the second metal connection structure 308 is formed on the surface of the first outer pad 302 of the acceleration sensor 31, so that the gyro sensor 21 and the acceleration sensor 31 can be flipped on the substrate 100, respectively.
  • the first surface 101 is connected to the first interconnecting line 103 and the second interconnecting line 104, respectively, which reduces the process difficulty and is advantageous for reducing the volume of the package structure.
  • the forming process and the setting of the same structure or the like are referred to the forming process and the setting of the related structure in the foregoing embodiment, and details are not described in this embodiment.
  • a first metal connection structure 208 is formed on the surface of the first outer pad 202 of the gyro sensor 21, and a second metal connection structure 308 is formed on the surface of the second outer pad 302 of the acceleration sensor 31.
  • the material of the first metal connection structure 208 and the second metal connection structure 308 is solder, and the solder may be tin, tin silver, tin lead, tin silver copper, tin silver zinc, tin zinc, tin antimonide, tin indium.
  • One or more of metals such as tin, tin, tin, zinc, indium or tin-silver.
  • the first metal connection structure 208 and the second metal connection structure 308 may be formed by a plating or stencil brushing process.
  • the gyro sensor 21 and the acceleration sensor 31 shown in FIGS. 15 and 16 are respectively flipped on the first surface 101 of the substrate 100, and the first metal connection structure 208 is electrically connected to the first interconnection 103.
  • the second metal connection structure 308 is electrically connected to the second interconnection 104.
  • the method further includes forming a fourth dispensing layer covering the surface of the gyro sensor 21 and the first metal connecting structure 208 and filling the space of the adjacent first metal connecting structure 208, through the third dispensing layer and the substrate
  • the first surface seals the angular velocity sensing region 201 of the gyro sensor 21 to prevent damage to the angular velocity sensing region 201 of the subsequent packaging process and moisture and corrosion during use, and by forming a third dispensing layer, without additional gyroscopes
  • the front surface of the sensor 21 forms a sealing cover, which reduces the volume of the package structure and achieves a sealing function.
  • the material of the fourth layer of the glue layer is a resin (glue), and the forming process is a dispensing process, an injection molding process or a transformation process.
  • the method further includes forming a fifth dispensing layer covering the surface of the acceleration sensor 31 and the second metal connecting structure 308 and filling the space of the adjacent second metal connecting structure 308, and the acceleration sensor is disposed through the fifth dispensing layer and the first surface of the substrate
  • the acceleration sensing region 301 of 31 is sealed to prevent damage to the acceleration sensing region 301 by the subsequent packaging process and moisture and corrosion during use, and by forming a fifth dispensing layer, it is not necessary to additionally form a sealing cover on the front surface of the acceleration sensor 31.
  • the sealing function is achieved while the volume of the small package structure is small.
  • the material of the fifth layer of the glue layer is a resin glue (glue), and the forming process is a dispensing process, an injection molding process or a transformation process.
  • FIG. 18 to FIG. 20 are structural diagrams showing a process of forming a MEMS sensor package structure according to a fourth embodiment of the present invention.
  • the magnetic induction sensor 41 is connected to the metal wiring layer 111 on the second surface 102 of the substrate 100 in a different manner, and the third metal connection structure 403 or 406 penetrates the back surface and the portion of the magnetic induction sensor 41.
  • the thickness is electrically connected to the third external pad 402 on the front surface of the magnetic induction sensor 41.
  • the back surface of the magnetic induction sensor 41 is attached to the second surface 102 of the substrate 100, and the surface of the magnetic induction sensor 41 is reduced to the second substrate 100.
  • the magnetic induction region 401 of the magnetic induction sensor 41 can be moved away from the gyro sensor 21 and the acceleration touch sensor 31 on the first surface 101 of the substrate 100, and the detection of the magnetic induction sensor is improved while reducing the volume of the package structure. Precision.
  • the forming process and the setting of the same structure or the like are referred to the forming process and the setting of the related structure in the foregoing embodiment, and are not described in detail in this embodiment.
  • the connection manner of the gyro sensor 21 and the first interconnection line, the acceleration sensor 31 and the second interconnection line may be the same as the connection manner disclosed in FIG. 20 and FIG. Any one of the connection methods is not particularly limited herein.
  • a third metal connection structure 403 or 406 is formed in the magnetic induction sensor 41, the third metal connection structure 403 or 406 penetrating the back surface and a portion of the thickness of the magnetic induction sensor 41, and the third surface of the magnetic induction sensor 41.
  • the external pads 402 are electrically connected.
  • the third metal connection structure 403 is formed by etching the etched magnetic induction sensor 41 along the back surface, and exposing the exposed third external contact pad 402 in the magnetic induction sensor 41. An etched hole in the bottom surface; the etched hole is filled with metal to form a third metal connection structure 403.
  • the third metal connection structure 406 is formed by etching the third metal connection structure 403 along the back surface and forming an exposed surface in the third metal connection structure 403. a recess of the bottom surface of the third external contact pad 402; a metal wiring layer is formed on the sidewall and the bottom surface of the recess and the back surface of the third metal connection structure 406, and a portion of the metal on the back surface of the third metal connection structure 406 is etched away a circuit layer, a third metal connection structure 406 is formed on the sidewalls and the bottom surface of the recess and a portion of the back surface of the third metal connection structure 406; forming a recess filled with the remaining recess and adjacent on the back surface of the third metal connection structure 406 An insulating dielectric layer between the third metal connection structures 406, the surface of the insulating dielectric layer being flush with the surface of the third metal connection structure 406 on the back surface of the third metal connection structure 406.
  • the magnetic induction sensor 41 has a third sealing cover 410 on the front surface thereof, and the third sealing cover 410 seals the magnetic field sensing area 401, and the plurality of third external bonding pads 402 are located on both sides of the third sealing cover 410.
  • the third sealing cover 410 seals the magnetic field sensing area 401 to prevent damage of the magnetic field sensing area 401 or moisture and corrosion during use in the subsequent packaging process, and a plurality of third external pads 402 are located on both sides of the third sealing cover 410.
  • the presence of the third sealing cover 410 does not affect the subsequent packaging process.
  • the material of the third sealing cover 410 may be silicon, glass or ceramic, and may be formed on the front surface of the magnetic induction sensor 41 by an adhesive layer bonding or bonding process.
  • the surface of the first metal connection structure 203 or 206 may also form a solder layer.
  • the back surface of the magnetic induction sensor 41 shown in FIG. 18 is attached to the second surface 102 of the substrate 100 such that the first metal connection structure 403 is electrically connected to the metal wiring layer 110 on the second surface 102 of the substrate 100.
  • the back surface of the magnetic induction sensor 41 shown in FIG. 18 is attached to the second surface 102 of the substrate 100 such that the first metal connection structure 406 and the second surface of the substrate 100
  • the metal wiring layer 110 is electrically connected.
  • the bonding process may employ one or a combination of a direct bonding process, a metal diffusion bonding, an anodic bonding, and a solder bonding.
  • the third metal connection structure 403 or 406 penetrates the back surface and a portion of the thickness of the magnetic induction sensor 41, and is electrically connected to the third external contact pad 402 on the front surface of the magnetic induction sensor 41.
  • the back of the magnetic induction sensor 41 is attached to the back surface.
  • the second surface 102 of the substrate 100, and the back surface of the gyro sensor 21 and the acceleration sensor 31 are adhered to the first surface 101 of the substrate 100 through the adhesive layers 105, 106, and the first metal connection structure 109 is passed through a wire bonding process.
  • the second metal connection structure 108, the two ends of the first metal connection structure 109 are electrically connected to the first outer connection pad 202 and the first interconnection line 103, respectively, and the two ends of the second metal connection structure 108 are respectively soldered to the second external connection
  • the disk 302 and the second interconnection 104 are electrically connected.
  • the third metal connection structure 403 or 406 penetrates the back surface and a portion of the thickness of the magnetic induction sensor 41, and is electrically connected to the third external contact pad 402 on the front surface of the magnetic induction sensor 41.
  • the magnetic induction sensor 41 is attached to the back surface.
  • the first metal connection structure 203 or 206 penetrates the back surface and a portion of the thickness of the gyro sensor 21, and the first external pad 202 on the front side of the gyro sensor 21 Electrically connected
  • the second metal connection structure 303 or 306 penetrates the back surface and a portion of the thickness of the acceleration sensor 31, and is electrically connected to the second external contact pad 302 on the front surface of the acceleration sensor 31.
  • the back surface of the gyro sensor 21 and the acceleration sensor 31 are attached to the substrate.
  • the first surface 101 of the 100 causes the first metal connection structure 203 to be electrically connected to the first interconnection line 103, and the integrated package manner of the gyro sensor 21, the acceleration sensor 31, and the magnetic induction sensor 41, so that the gyro sensor 21 and the acceleration sensor 31 and the subsequent surface of the magnetic induction sensor 41 to the first surface 101 of the substrate 100 are smaller, which is advantageous for reducing the volume of the package structure.
  • the magnetic induction region 401 of the magnetic induction sensor 41 is away from the gyro sensor 21 and the acceleration sensor 31, so that the magnetic induction sensor 41 is less interfered by the gyro sensor 21 and the acceleration sensor 31, and the detection accuracy of the magnetic induction sensor 41 is improved.
  • a MEMS sensor package structure is also provided. Referring to FIG. 8, the method includes:
  • the substrate 100 includes a first surface 101 having an interconnecting line and an opposite second surface 102, the interconnecting line including a first interconnecting line 103 and a second interconnecting line 104 in the substrate ;
  • the gyro sensor 21 includes a plurality of first external pads 202
  • the acceleration sensor 31 includes a plurality of second external pads 302
  • the magnetic induction sensor 41 includes a plurality of Three external pads 401;
  • the gyro sensor 21 and the acceleration sensor 31 are mounted on the first surface 101 of the substrate 100, and the first external pad 202 of the gyro sensor 21 is electrically connected to the interconnection (the first interconnection 103) through the first metal connection structure 109.
  • the second external pad 302 of the acceleration sensor 31 is electrically connected to the interconnection (second interconnection 104) through the second metal connection structure 108;
  • the interconnect line further includes a plurality of metal circuit layers 110 on the second surface 102 of the substrate 100;
  • the magnetic induction sensor 41 is mounted on the second surface 102 of the substrate 100, and the third external contact pad 402 of the magnetic induction sensor 41 is electrically connected to the interconnection (metal wiring layer 110) through the third metal connection structure 111;
  • solder bumps on the second surface 102 of the substrate 100, the solder bumps being electrically connected to the interconnect lines, the specific solder bumps including the first solder bumps 112, the second solder bumps 114, and the third solder bumps 113
  • the first solder bumps 112 are electrically connected to the first interconnecting lines 103
  • the second solder bumps 114 are electrically connected to the second interconnecting lines 104
  • the third solder bumps 113 are electrically connected to the metal wiring layer 110.
  • the gyro sensor 21 includes a front surface and an opposite back surface, the first external pad 202 is located on the front surface of the gyro sensor, the acceleration sensor 31 includes a front surface and an opposite back surface, and the second external contact pad 302 is located at an acceleration.
  • the magnetic induction sensor 41 includes a front side and an opposite back side, and the third external contact pad 402 is located on the front side of the magnetic induction sensor.
  • the back surface of the gyro sensor 21 and the acceleration sensor 31 are adhered to the first surface 101 of the substrate 100.
  • the first metal connection structure 109 and the second metal connection structure 108 are metal lines, and the first metal connection structure 109 The two ends are electrically connected to the first outer pad 202 and the first interconnecting line 103, respectively, and the middle portion of the first metal connecting structure 109 is suspended on both sides of the gyro sensor 21, and the two ends of the second metal connecting structure 109 are respectively.
  • the second external pad 302 and the second interconnection 104 are electrically connected, and the intermediate portion of the second metal connection 108 is suspended on both sides of the acceleration sensor.
  • the back surface of the gyro sensor 21 and the acceleration sensor 31 are attached to the first surface 101 of the substrate 100, and the first metal connecting structure 203/206 penetrates the gyro sensor.
  • the back surface and the partial thickness of 21 are electrically connected to the first outer pad 202 on the front surface of the gyro sensor 21, and the second metal connection structure 303/306 penetrates the back surface and the partial thickness of the acceleration sensor 31, and the acceleration sensor 31.
  • the front second external pads 302 are electrically connected.
  • first metal connection structure 208 is located on the surface of the first external pad 202
  • second metal connection structure 308 is located on the surface of the second external pad 302.
  • the gyro sensor 21 and the acceleration sensor 31 is flip-chip mounted on the first surface 101 of the substrate 100, respectively.
  • the third metal connection structure 111 is located on the surface of the third external pad 402 , and the magnetic induction sensor 41 is flipped on the second surface 402 of the substrate 100 .
  • the back surface of the magnetic induction sensor 41 is attached to the second surface of the substrate, the third metal connection structure is a metal line, and the two ends of the third metal connection structure are respectively connected to the third external connection pad and the metal circuit layer. Electrically connected, the middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor.
  • the back surface of the magnetic induction sensor 41 is adhered to the second surface 102 of the substrate 100, and the third metal connection structure 403/406 penetrates the back surface and the portion of the magnetic induction sensor 41.
  • the thickness is electrically connected to the third external pad 403 on the front surface of the magnetic induction sensor 41.
  • the gyro sensor is a three-axis gyro sensor
  • the acceleration sensor is a three-axis acceleration sensor
  • the magnetic induction sensor is a three-axis magnetic induction sensor.
  • FIG. 22 to FIG. 23 are structural diagrams showing a process of forming a MEMS sensor package structure according to a fifth embodiment of the present invention.
  • the present embodiment implements an integrated package of a data processing chip 501 and a gyro sensor 21, an acceleration sensor 31, and a magnetic induction sensor 41, which reduces the volume of the package structure, and the data processing
  • the chip 501 can process signals induced by the gyro sensor 21, the acceleration sensor 31, and the magnetic induction sensor 41, and transmit the processed signals from the solder bumps.
  • the definitions or descriptions of the same or similar structures, the same or similar connection manners in the foregoing embodiments refer to the corresponding structures in the foregoing embodiments, the definitions or descriptions of the corresponding connection manners, This embodiment will not be described again.
  • a substrate 100 is provided.
  • the substrate 100 includes a first surface 101 and an opposite second surface 102.
  • the substrate 100 has an interconnection line therein.
  • the interconnection line is included in the substrate 100.
  • the four interconnecting lines 125, the first metal wiring layer 116 and the plurality of second metal wiring layers 117 are insulated from each other;
  • a gyro sensor 21, an acceleration sensor 31 and a magnetic induction sensor 41 are provided.
  • the gyro sensor 21 includes a plurality of first external pads 202
  • the acceleration sensor 31 includes a plurality of second external pads 302
  • the magnetic induction sensor 41 includes a plurality of a third external pad 402;
  • the gyro sensor 21 and the acceleration sensor 31 are respectively mounted on the first surface 101 of the substrate 100, and the first external pad 202 of the gyro sensor 21 passes through the first metal connection structure 109 and the interconnection (third interconnection 124) Electrically connected, the second external pad 302 of the acceleration sensor 31 is electrically connected to the interconnection (fourth interconnection 125) through the second metal connection structure 108;
  • the magnetic induction sensor 41 is mounted on the second surface 102 of the substrate 100, and the third external contact pad 402 of the magnetic induction sensor 41 is electrically connected to the interconnection (the first metal wiring layer 116) through the third metal connection structure 111;
  • the data processing chip 501 is flip-chip mounted on the second surface 102 of the substrate 100, the data processing chip 501 and the interconnection (the third interconnection 124, the fourth interconnection 125, the first metal wiring layer 116, and the second metal wiring) Layer 117) electrical connection;
  • Solder bumps 115 are formed on the surface of the second metal wiring layer 117.
  • the data processing chip 501 is configured to process signals induced by the gyro sensor 21, the acceleration sensor 31, and the magnetic induction sensor 41, and transmit the processed signals to other chips or circuits through the solder bumps 115, the data.
  • a processing circuit (not shown) is formed in the processing chip 501, the surface of the data processing chip 501 having a plurality of input pads 503 and output pads 502 electrically connected to the signal processing circuit, the input pads 503 and corresponding
  • the third interconnect line 124, the fourth interconnect line 125, the first metal line layer 116 are electrically connected, and the output pad 502 is electrically connected to the second metal line layer 117.
  • a portion of the input pads 503 of the data processing chip 501 are electrically coupled to the gyro sensor 21 via a third interconnect 124, a first metal connection 109, and a first external pad 202.
  • the data processing chip 501 The portion of the input pad 503 is electrically connected to the acceleration sensor 31 through the fourth interconnection 125, the second metal connection 108, and the second external pad 302.
  • a portion of the input pad 503 of the data processing chip 501 passes through the first metal circuit layer. 116.
  • the third metal connection structure 111 and the third external connection pad 402 are electrically connected to the magnetic induction sensor.
  • the signal processing chip 501 can also receive an external signal through the solder bump 115, the second metal wiring layer 117, and the output pad 502, and transmit a corresponding control signal to the gyro sensor 21 and the acceleration sensor through the input pad 503. 31 and magnetic induction sensor 41.
  • the gyro sensor 21 includes a front surface and an opposite back surface
  • the first external pad 202 is located on the front surface of the gyro sensor 21
  • the acceleration sensor 31 includes a front surface and an opposite back surface
  • the second external contact pad 302 is located
  • the magnetic induction sensor 41 includes a front surface and an opposite back surface
  • the third external contact pad 402 is located on the front surface of the magnetic induction sensor 41.
  • the back surface of the gyro sensor 21 and the acceleration sensor 31 are adhered to the first surface 101 of the substrate 100.
  • the first metal connection structure 109 and the second metal connection structure 108 are metal lines, and the first metal connection structure 109 The two ends are electrically connected to the first external pad 202 and the third interconnection 124, respectively, and the middle portion of the first metal connection structure 109 is suspended on both sides of the gyro sensor 21, and the two ends of the second metal connection structure 108 are respectively.
  • the second outer pad 302 and the fourth interconnecting line 125 are electrically connected, and the middle portion of the second metal connecting structure 108 is suspended on both sides of the acceleration sensor 31.
  • the forming process of the metal wires (the first metal connecting structure 109 and the second metal connecting structure 108) is wire bonding, and after forming the metal wires, further comprising forming a dispensing layer that at least seals the metal wires.
  • the gyro sensor 21 and the acceleration sensor 31 are back-attached to the first surface 101 of the substrate 100, and the first metal connection structure 109 penetrates the back surface of the gyro sensor 31 and Partially thicknessed and electrically connected to the first outer pad 202 on the front side of the gyro sensor 21, the second metal connection structure 108 penetrating the back surface and the partial thickness of the acceleration sensor 31, and the second external soldering of the front surface of the acceleration sensor 31
  • the disk 302 is electrically connected.
  • the first metal connection structure is located on a surface of the first external connection pad
  • the second metal connection structure is located on a surface of the second external connection pad
  • the gyro sensor and the acceleration sensor are respectively flipped on the substrate On the first surface (similar to the connection shown in Figure 17).
  • the third metal connection structure 111 is located on the surface of the third external pad 402, and the magnetic induction sensor 41 is flipped on the second surface 102 of the substrate 100.
  • the back side of the magnetic induction sensor 40 is attached to the second surface 102 of the substrate 100.
  • the third metal connection structure is a metal line, and the two ends of the third metal connection structure are respectively connected with the third external connection pad and the metal.
  • the circuit layers are electrically connected, and the middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor (similar to the connection manner shown in FIGS. 20 and 21).
  • the back surface of the magnetic induction sensor 41 is adhered to the second surface 102 of the substrate 100.
  • the third metal connection structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor, and is connected to the third external connection of the front surface of the magnetic induction sensor. Disk connection (similar to the connection shown in Figure 20 and Figure 21).
  • first metal circuit layer 116 and the plurality of second metal circuit layers 117 For the formation process and related definitions of the first metal circuit layer 116 and the plurality of second metal circuit layers 117, refer to the formation process and related definitions of the metal circuit layer in the foregoing embodiments, and details are not described herein again.
  • the embodiment of the invention further provides a MEMS sensor package structure.
  • the method includes:
  • a substrate 100 including a first surface 101 having an interconnecting line and an opposite second surface 102, the interconnecting line including a third interconnecting line 124 and a fourth interconnecting line in the substrate 100 125, and a plurality of first metal circuit layers 116 and a plurality of second metal circuit layers 117 on the second surface 102 of the substrate 100;
  • the gyro sensor 21 includes a plurality of first external pads 202
  • the acceleration sensor 31 includes a plurality of second external pads 302
  • the magnetic induction sensor 41 includes a plurality of Three external pads 402;
  • the gyro sensor 21 and the acceleration sensor 31 are mounted on the first surface 101 of the substrate 100, and the first external pad 202 of the gyro sensor 11 is electrically connected to the interconnection (third interconnection 124) through the first metal connection structure 109.
  • the second external pad 302 of the acceleration sensor 31 is electrically connected to the interconnection (fourth interconnection 125) through the second metal connection structure 108;
  • the magnetic induction sensor 41 is mounted on the second surface 102 of the substrate 100, and the third external contact pad 402 of the magnetic induction sensor 41 is electrically connected to the interconnection (the first metal wiring layer 116) through the third metal connection structure 111;
  • the data processing chip 501 is flip-chip mounted on the second surface 102 of the substrate 100, the data processing chip 401 and the interconnection (the third interconnection 124, the fourth interconnection 125, the first metal wiring layer 116, and the second metal wiring layer). 117) electrical connection;
  • the gyro sensor 21 includes a front surface and an opposite back surface
  • the first external pad 202 is located on the front surface of the gyro sensor 21
  • the acceleration sensor 31 includes a front surface and an opposite back surface
  • the second external contact pad 302 is located
  • the magnetic induction sensor 41 includes a front surface and an opposite back surface
  • the third external contact pad 402 is located on the front surface of the magnetic induction sensor 41.
  • the back surface of the gyro sensor 21 and the acceleration sensor 31 are adhered to the first surface 101 of the substrate 100.
  • the first metal connection structure 109 and the second metal connection structure 108 are metal lines, and the first metal connection structure 109 The two ends are electrically connected to the first external pad 202 and the third interconnection 124, respectively, and the middle portion of the first metal connection structure 109 is suspended on both sides of the gyro sensor 21, and the two ends of the second metal connection structure 108 are respectively.
  • the second outer pad 302 and the fourth interconnecting line 125 are electrically connected, and the middle portion of the second metal connecting structure 108 is suspended on both sides of the acceleration sensor 31.
  • the gyro sensor 21 and the acceleration sensor 31 are back-attached to the first surface 101 of the substrate 100, and the first metal connection structure 109 penetrates the back surface of the gyro sensor 31 and Partially thicknessed and electrically connected to the first outer pad 202 on the front side of the gyro sensor 21, the second metal connection structure 108 penetrating the back surface and the partial thickness of the acceleration sensor 31, and the second external soldering of the front surface of the acceleration sensor 31
  • the disk 302 is electrically connected.
  • the first metal connection structure is located on a surface of the first external connection pad
  • the second metal connection structure is located on a surface of the second external connection pad
  • the gyro sensor and the acceleration sensor are respectively flipped on the substrate On the first surface (similar to the connection shown in Figure 17).
  • the third metal connection structure 111 is located on the surface of the third external pad 402, and the magnetic induction sensor 41 is flipped on the second surface 102 of the substrate 100.
  • the back side of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure is a metal line, and the two ends of the third metal connection structure are respectively electrically connected to the third external connection pad and the metal circuit layer. Connected, the middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor (similar to the connection shown in Figures 20 and 21).
  • the back of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor, and is electrically connected to the third external pad of the front surface of the magnetic induction sensor. (Like the connection method shown in Fig. 20 and Fig. 21).
  • the gyro sensor 21 includes a front surface and an opposite back surface
  • the first external pad 202 is located on the front surface of the gyro sensor 21
  • the acceleration sensor 31 includes a front surface and an opposite back surface
  • the second external contact pad 302 is located
  • the magnetic induction sensor 41 includes a front surface and an opposite back surface
  • the third external contact pad 402 is located on the front surface of the magnetic induction sensor 41.
  • the back surface of the gyro sensor 21 and the acceleration sensor 31 are adhered to the first surface 101 of the substrate 100.
  • the first metal connection structure 109 and the second metal connection structure 108 are metal lines, and the first metal connection structure 109 The two ends are electrically connected to the first external pad 202 and the third interconnection 124, respectively, and the middle portion of the first metal connection structure 109 is suspended on both sides of the gyro sensor 21, and the two ends of the second metal connection structure 108 are respectively.
  • the second outer pad 302 and the fourth interconnecting line 125 are electrically connected, and the middle portion of the second metal connecting structure 108 is suspended on both sides of the acceleration sensor 31.
  • the gyro sensor 21 and the acceleration sensor 31 are back-attached to the first surface 101 of the substrate 100, and the first metal connection structure 109 penetrates the back surface of the gyro sensor 31 and Partially thicknessed and electrically connected to the first outer pad 202 on the front side of the gyro sensor 21, the second metal connection structure 108 penetrating the back surface and the partial thickness of the acceleration sensor 31, and the second external soldering of the front surface of the acceleration sensor 31
  • the disk 302 is electrically connected.
  • the first metal connection structure is located on a surface of the first external connection pad
  • the second metal connection structure is located on a surface of the second external connection pad
  • the gyro sensor and the acceleration sensor are respectively flipped on the substrate On the first surface (similar to the connection shown in Figure 17).
  • the third metal connection structure 111 is located on the surface of the third external pad 402, and the magnetic induction sensor 41 is flipped on the second surface 102 of the substrate 100.
  • the back side of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure is a metal line, and the two ends of the third metal connection structure are respectively electrically connected to the third external connection pad and the metal circuit layer. Connected, the middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor (similar to the connection shown in Figures 20 and 21).
  • the back of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor, and is electrically connected to the third external pad of the front surface of the magnetic induction sensor. (Like the connection method shown in Fig. 20 and Fig. 21).
  • the surface of the data processing chip 501 has a plurality of input pads 503 and output pads 502.
  • the input pads 503 are electrically connected to the corresponding third interconnecting lines 124, fourth interconnecting lines 125, and first metal wiring layer 116.
  • the output pad 502 is electrically connected to the second metal wiring layer 117.
  • FIG. 24 to FIG. 25 are structural diagrams showing a process of forming a MEMS sensor package structure according to a sixth embodiment of the present invention.
  • the difference between this embodiment and the fifth embodiment is that the data processing chip 501 and the gyro sensor 21 and the acceleration sensor 31 are both packaged on the first surface 101 of the substrate 100, and the magnetic induction sensor 41 is packaged on the second surface 102 of the substrate 100.
  • the data processing chip 501 and the gyro sensor 21 and the acceleration sensor 31 are both packaged on the first surface 101 of the substrate 100, and the magnetic induction sensor 41 is packaged on the second surface 102 of the substrate 100.
  • a substrate 100 which includes a first surface 101 and an opposite second surface 1021, the substrate 100 having interconnection lines; in the embodiment, the interconnection line includes a portion located in the substrate 100. a fifth interconnecting line 120 and a sixth interconnecting line 119, and a plurality of third metal wiring layers 122 and a plurality of fourth metal wiring layers 123 formed on the first surface 101 of the substrate 100;
  • a gyro sensor 21, an acceleration sensor 31 and a magnetic induction sensor 41 are provided.
  • the gyro sensor 21 includes a plurality of first external pads 202
  • the acceleration sensor 31 includes a plurality of second external pads 302
  • the magnetic induction sensor 41 includes a plurality of a third external pad 402;
  • the gyro sensor 21 and the acceleration sensor 31 are respectively mounted on the first surface 101 of the substrate 100, and the first external pad 202 of the gyro sensor 21 passes through the first metal connection structure 109 and the interconnection (third metal wiring layer 122) Electrically connected, the second external pad 302 of the acceleration sensor 31 is electrically connected to the interconnection (fourth metal circuit layer 123) through the second metal connection structure 108;
  • the magnetic induction sensor 41 is mounted on the second surface 102 of the substrate 100, and the third external contact pad 402 of the magnetic induction sensor 41 is electrically connected to the interconnection (the fifth interconnection 120) through the third metal connection structure 111;
  • the data processing chip 501 is flip-chip mounted on the first surface 101 of the substrate 100, the data processing chip 501 and the interconnection (the third metal wiring layer 122, the fourth metal wiring layer 123, the fifth interconnection 120, and the sixth interconnection) Line 119) electrical connection;
  • the interconnection further includes a plurality of fifth metal wiring layers 121 on the second surface 102 of the substrate 100, and a plurality of fifth metal wiring layers 121 are formed on the second surface 102 of the substrate 100, and the fifth metal wiring layer 121 is
  • the sixth interconnection 119 is electrically connected;
  • Solder bumps 118 are formed on the surface of the fifth metal wiring layer 121.
  • the gyro sensor 21 includes a front surface and an opposite back surface
  • the first external pad 202 is located on the front surface of the gyro sensor 21
  • the acceleration sensor 31 includes a front surface and an opposite back surface
  • the second external contact pad 302 is located
  • the magnetic induction sensor 41 includes a front surface and an opposite back surface
  • the third external contact pad 402 is located on the front surface of the magnetic induction sensor 41.
  • the back surface of the gyro sensor 21 and the acceleration sensor 31 are adhered to the first surface 101 of the substrate 100.
  • the first metal connection structure 109 and the second metal connection structure 108 are metal lines, and the first metal connection structure 109 The two ends are electrically connected to the first external pad 202 and the third metal circuit layer 122, respectively, and the middle portion of the first metal connection structure 109 is suspended on both sides of the gyro sensor 21, and the two ends of the second metal connection structure 108 are respectively.
  • the second outer pad 302 and the fourth metal wiring layer 123 are electrically connected, and the intermediate portion of the second metal connecting structure 109 is suspended on both sides of the acceleration sensor 31.
  • the method further includes: forming at least a coating A dispensing layer of metal wires (first metal connection structure 109 and second metal connection structure 108).
  • the dispensing layer covers the gyro sensor 21, the acceleration sensor 31, the data processing chip 501, and the first substrate 100 in addition to the first metal connection structure 109 and the second metal connection structure 108.
  • the dispensing layer has a flat upper surface, such that the dispensing layer can serve as a platform for facilitating subsequent processing steps of mounting the magnetic induction sensor 41 and forming the solder bumps 118 on the second surface of the substrate 100.
  • the material of the dispensing layer is a resin (glue), and the forming process is a dispensing process, an injection molding process, or a transformation process.
  • the back surface of the gyro sensor 21 and the acceleration sensor 31 are attached to the first surface 101 of the substrate 100, and one end of the first metal connection structure 106 runs through the gyro sensor 21.
  • the back surface and a portion of the thickness are electrically connected to the first external pad 202 on the front surface of the gyro sensor 21, and the other end of the first metal connection structure 106 is electrically connected to the third metal circuit layer 122, and one end of the second metal connection structure 306
  • the back surface and the partial thickness of the acceleration sensor 31 are electrically connected to the second outer contact pad 302 on the front surface of the acceleration sensor 31, and the other end of the second metal connection structure 306 is electrically connected to the fourth metal circuit layer.
  • the first metal connection structure is located on a surface of the first external connection pad
  • the second metal connection structure is located on a surface of the second external connection pad
  • the gyro sensor and the acceleration sensor are respectively flipped on the substrate
  • the first metal connection structure and the second metal connection structure are electrically connected to the third metal circuit layer and the fourth metal circuit layer, respectively.
  • the third metal connection structure 111 is located on the surface of the third external contact pad 402, and the magnetic induction sensor 41 is flipped on the second surface 102 of the substrate 400.
  • the back side of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure is a metal line, and the two ends of the third metal connection structure are respectively connected to the third external pad and the fifth interconnection.
  • the line connection, the middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor.
  • the back of the magnetic induction sensor is attached to the second surface of the substrate, and one end of the third metal connection structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor, and the third external pad of the front surface of the magnetic induction sensor The other end is electrically connected to the fifth interconnecting line.
  • the data processing chip 501 includes a plurality of input pads 503 and output pads 502, and input pads 503 and corresponding third metal lines 122, fourth metal line layers 123, and fifth interconnect lines 120. Electrically connected, the output pad 502 is electrically coupled to the sixth interconnect.
  • the fourth portion of the metal wiring layer and the fifth portion may be further formed on the first surface 101.
  • the metal wiring layer, the fourth partial metal wiring layer is electrically connected to the fifth interconnection line 120, and the fifth partial metal wiring layer is electrically connected to the sixth interconnection line 119.
  • a MEMS sensor package structure is also provided in this embodiment. Referring to FIG. 23, the method includes:
  • a substrate 100 including a first surface 101 having an interconnection line and an opposite second surface 102, the interconnection line including a fifth interconnection line 120 and a sixth interconnection located in the substrate 100 Connecting lines 119, and a plurality of third metal circuit layers 122 and a plurality of fourth metal circuit layers 123 on the first surface 101 of the substrate 100;
  • the gyro sensor 21 includes a plurality of first external pads 202
  • the acceleration sensor 31 includes a plurality of second external pads 302
  • the magnetic induction sensor 41 includes a plurality of Three external pads 402;
  • the gyro sensor 21 and the acceleration sensor 31 are respectively mounted on the first surface 101 of the substrate 100, and the first external pad 202 of the gyro sensor 21 is electrically connected to the interconnection (third metal wiring layer 122) through the first metal connection structure 109. Connecting, the second external pad 302 of the acceleration sensor 31 is electrically connected to the interconnection (fourth metal circuit layer 123) through the second metal connection 108;
  • the magnetic induction sensor 41 is mounted on the second surface 102 of the substrate 100, and the third external connection 402 of the magnetic induction sensor 41 is electrically connected to the interconnection (the fifth interconnection 120) through the third metal connection structure 111;
  • the data processing chip 501 is flip-chip mounted on the first surface 101 of the substrate 100, the data processing chip 501 and the interconnection (the third metal wiring layer 122, the fourth metal wiring layer 123, the fifth interconnection 120, and the sixth interconnection) 119) electrical connection;
  • the interconnection further includes a plurality of fifth metal circuit layers 121 on the second surface 102 of the substrate 100, the fifth metal circuit layer 121 being electrically connected to the sixth interconnection 119;
  • a solder bump 118 on the surface of the fifth metal wiring layer 121 is soldered.
  • the gyro sensor 21 includes a front surface and an opposite back surface
  • the first external pad 202 is located on the front surface of the gyro sensor 21
  • the acceleration sensor 31 includes a front surface and an opposite back surface
  • the second external contact pad 302 is located
  • the magnetic induction sensor 41 includes a front surface and an opposite back surface
  • the third external contact pad 402 is located on the front surface of the magnetic induction sensor 41.
  • the back surface of the gyro sensor 21 and the acceleration sensor 31 are adhered to the first surface 101 of the substrate 100.
  • the first metal connection structure 109 and the second metal connection structure 108 are metal lines, and the first metal connection structure 109 The two ends are electrically connected to the first external pad 202 and the third metal circuit layer 122, respectively, and the middle portion of the first metal connection structure 109 is suspended on both sides of the gyro sensor 21, and the two ends of the second metal connection structure 108 are respectively.
  • the second outer pad 302 and the fourth metal wiring layer 123 are electrically connected, and the intermediate portion of the second metal connecting structure 109 is suspended on both sides of the acceleration sensor 31.
  • the back surface of the gyro sensor 21 and the acceleration sensor 31 are attached to the first surface 101 of the substrate 100, and one end of the first metal connection structure 106 runs through the gyro sensor 21.
  • the back surface and a portion of the thickness are electrically connected to the first external pad 202 on the front surface of the gyro sensor 21, and the other end of the first metal connection structure 106 is electrically connected to the third metal circuit layer 122, and one end of the second metal connection structure 306
  • the back surface and the partial thickness of the acceleration sensor 31 are electrically connected to the second outer contact pad 302 on the front surface of the acceleration sensor 31, and the other end of the second metal connection structure 306 is electrically connected to the fourth metal circuit layer.
  • the first metal connection structure is located on a surface of the first external connection pad
  • the second metal connection structure is located on a surface of the second external connection pad
  • the gyro sensor and the acceleration sensor are respectively flipped on the substrate
  • the first metal connection structure and the second metal connection structure are electrically connected to the third metal circuit layer and the fourth metal circuit layer, respectively.
  • the third metal connection structure 111 is located on the surface of the third external contact pad 402, and the magnetic induction sensor 41 is flipped on the second surface 102 of the substrate 400.
  • the back side of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure is a metal line, and the two ends of the third metal connection structure are respectively connected to the third external pad and the fifth interconnection.
  • the line connection, the middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor.
  • the back of the magnetic induction sensor is attached to the second surface of the substrate, and one end of the third metal connection structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor, and the third external pad of the front surface of the magnetic induction sensor The other end is electrically connected to the fifth interconnecting line.
  • the data processing chip 501 includes a plurality of input pads 503 and output pads 502, and input pads 503 and corresponding third metal lines 122, fourth metal line layers 123, and fifth interconnect lines 120. Electrically connected, the output pad 502 is electrically coupled to the sixth interconnect.
  • 26 to FIG. 37 are structural diagrams showing a process of forming a MEMS sensor package structure according to a seventh embodiment of the present invention.
  • the integrated package of the gyro sensor module 61, the acceleration sensor module 71, and the magnetic induction sensor module 81 is implemented in the embodiment, which reduces the volume of the package structure, and is first
  • the data processing chip, the second data processing chip and the third data processing chip can separately process the signals sensed by the corresponding gyro sensor, the acceleration sensor, and the magnetic induction sensor, thereby improving the processing efficiency and passing the processed signal through the first A solder bump, a second solder bump, and a third solder bump output.
  • a gyro sensor module 61, an acceleration sensor module 71, and a magnetic induction sensor module 81 are provided, the gyro sensor module 61 including a gyro sensor 21 and a first electrical connection with the gyro sensor 21
  • the third data processing chip 801 and the third external pad 805 are electrically connected to the magnetic induction sensor 41 and the magnetic induction sensor 41.
  • the gyro sensor 21 includes a front surface and an opposite back surface.
  • the front surface of the gyro sensor 21 has a plurality of first inner pads 205 and first outer pads 206.
  • the first data processing chip 601 is located at the gyro sensor. On the front side of the 21, the first data processing chip 601 is electrically connected to the first inner pad 205 and the first outer pad 206, and the acceleration sensor 31 includes a front side and an opposite back side.
  • the first internal pad 205 is located around the angular velocity sensing area 201 for sensing the acceleration of the object to generate an electrical signal.
  • the first internal pad 205 acts as the gyro sensor 21 and the first data processing.
  • the chip 601 performs an electrical connection point for electrical signal transmission.
  • the number of the first internal pads 205 is plural (two or more), some of the first internal pads may transmit induced electrical signals, and some of the first internal pads may receive external control signals or power signals.
  • the first external pad 206 is adapted to transmit the processed signal of the gyro sensor module 61 and can receive an external control signal or the like.
  • the first external pad 206 is located around the first internal pad 205 for facilitating the gyro.
  • the meter sensor module 61 is electrically coupled to a first interconnect in the substrate.
  • the first external pad 206 is electrically connected to the first data processing chip 601.
  • a portion of the first external pads 206 are electrically connected to the first data processing chip 601, and a portion of the first external pads 206 are electrically connected to the first internal pads 205.
  • the first data processing chip 601 is configured to process an electrical signal induced by the gyro sensor 21, and a signal processing circuit (not shown) is formed in the first data processing chip 601, and a surface of the first data processing chip 601 is formed.
  • a plurality of input pads 603 and output pads 602 having electrical connections to signal processing circuits, the input pads 603 being electrically coupled to the first internal pads 205 of the respective gyro sensors 21, the output pads 502 being coupled to the first external solder
  • the disk 206 is electrically connected.
  • the first data processing chip 601 includes a front side and an opposite back side.
  • the input pad 603 and the output pad 602 are located on the front side of the first data processing chip 601, and the input pad 603 of the first data processing chip 601 is connected through the fourth metal.
  • the structure 604 is electrically connected to the first internal pad 205, and the output pad 602 of the first data processing chip 601 is electrically connected to the first external pad 206 through the fifth metal connection structure 605, so that the first data processing chip 601 can pass the input.
  • the pad 603 receives the electrical signal induced by the gyro sensor 21 through the fourth metal connection structure 604 and the first internal pad 205, and outputs the processed signal through the output pad 602, the fifth metal connection structure 605 and the first external pad 206. Electrical signal.
  • the back surface of the first data processing chip 601 is attached to the front surface of the gyro sensor 21, and the fourth metal connection structure 604 and the fifth metal connection structure 605 are metal wires, and the fourth metal connection structure 604 and the The intermediate portion of the five metal connection structure 605 is suspended on both sides of the first data processing chip 601, and both ends of the fourth metal connection structure 604 are electrically connected to the input pad 603 and the first internal pad 205 of the first data processing chip 601, respectively.
  • the two ends of the fifth metal connection structure 605 are electrically connected to the output pad 602 of the first data processing chip 601 and the first external pad 206, respectively.
  • the back surface of the first data processing chip 601 is attached to the front surface of the gyro sensor 21, and the angular velocity sensing area 201 of the gyro sensor 21 is sealed, so that it is not necessary to additionally form a sealing cover on the front surface of the gyro sensor 21. While the manufacturing cost is saved, the sensing signal of the gyro sensor 21 and the sealing of the angular velocity sensing area 201 are realized.
  • the acceleration sensor 31 includes a front surface and an opposite back surface, and the front surface of the acceleration sensor 31 has a plurality of second inner pads 305 and second outer pads 306, and the second data processing chip 701 is located on the front surface of the acceleration sensor 31.
  • the second data processing chip 701 is electrically connected to the second internal pad 305 and the second external pad 306.
  • the second internal pad 305 is located around the acceleration sensing area 301 for sensing the acceleration of the object to generate an electrical signal, and the second internal pad 305 is used as the acceleration sensor 31 and the second data processing chip.
  • 701 is an electrical connection point for electrical signal transmission.
  • the number of the second internal pads 305 is plural (two or more), some of the second internal pads may transmit induced electrical signals, and some of the second internal pads may receive external control signals or power signals.
  • the second external pad 306 is adapted to transmit the signal processed by the acceleration sensor module 71 and can receive an external control signal or the like.
  • the second external pad 306 is located around the second internal pad 305 for the acceleration sensor.
  • Module 71 is electrically coupled to a first interconnect in substrate 100.
  • the second external pad 306 is electrically connected to the second data processing chip 701.
  • a portion of the second external pads 306 are electrically coupled to the second data processing chip 701, and a portion of the second external pads 306 are electrically coupled to the second internal pads 305.
  • the second data processing chip 701 is configured to process an electrical signal induced by the acceleration sensor 31, and a signal processing circuit (not shown) is formed in the second data processing chip 701.
  • the surface of the second data processing chip 701 has a surface.
  • the second data processing chip 701 includes a front side and an opposite back side, the input pad 703 and the output pad 702 are located on the front side of the second data processing chip 701, and the input pad 703 of the second data processing chip 701 is connected through the sixth metal.
  • the structure 704 is electrically connected to the second internal pad 305, and the output pad 702 of the second data processing chip 701 is electrically connected to the second external pad 306 through the seventh metal connection structure 705, so that the second data processing chip 701 can pass the input.
  • the pad 703 receives the electrical signal induced by the acceleration sensor 31 through the sixth metal connection structure 704 and the second internal pad 305, and outputs the processed signal through the output pad 702, the seventh metal connection structure 705 and the second external connection pad 306. electric signal.
  • the back surface of the second data processing chip 701 is attached to the front surface of the acceleration sensor 31, and the sixth metal connection structure 704 and the seventh metal connection structure 705 are metal lines, and the sixth metal connection structure 704 and the seventh.
  • the middle portion of the metal connection structure 705 is suspended on both sides of the second data processing chip 701, and the two ends of the sixth metal connection structure 704 are electrically connected to the input pad 703 of the second data processing chip 701 and the second internal pad 305, respectively.
  • the two ends of the seventh metal connection structure 705 are electrically connected to the output pad 702 and the second external pad 306 of the second data processing chip 701, respectively.
  • the back surface of the second data processing chip 701 is attached to the front surface of the acceleration sensor 31, and the acceleration sensing area 301 of the acceleration sensor 31 is sealed, so that it is not necessary to additionally form a sealing cover on the front surface of the acceleration sensor 31, thereby saving manufacturing costs.
  • the sensing signal of the acceleration sensor 31 and the sealing of the acceleration sensing area 301 are realized.
  • the magnetic induction sensor 41 includes a front surface and an opposite back surface.
  • the front surface of the magnetic induction sensor 41 has a plurality of third inner pads 405 and third outer pads 406.
  • the third data processing chip 801 is located on the front surface of the magnetic induction sensor 41.
  • the third data processing chip 801 is electrically connected to the third inner pad 405 and the third outer pad 406.
  • the third internal pad 405 is located around the magnetic induction sensing area 401 for sensing magnetic induction of an object to generate an electrical signal, and the third internal pad 405 functions as a magnetic induction sensor 41 and a third data processing chip. 801 is an electrical connection point for electrical signal transmission.
  • the number of the third internal pads 405 is plural (two or more), some of the third internal pads may transmit induced electrical signals, and some of the third internal pads may receive external control signals or power signals.
  • the third external pad 406 is adapted to transmit the processed signal of the magnetic induction sensor module 81 and can receive an external control signal or the like.
  • the third external pad 406 is located around the third internal pad 405 for facilitating the magnetic induction sensor.
  • Module 81 is electrically coupled to a first interconnect in substrate 100.
  • the third external pad 406 is electrically connected to the third data processing chip 801.
  • a portion of the third external pads 406 are electrically coupled to the third data processing chip 801, and a portion of the third external pads 406 are electrically coupled to the third internal pads 405.
  • the third data processing chip 801 is configured to process an electrical signal induced by the magnetic induction sensor 41, and a signal processing circuit (not shown) is formed in the third data processing chip 801.
  • the surface of the third data processing chip 801 has a surface.
  • the third data processing chip 801 includes a front side and an opposite back side, the input pad 803 and the output pad 802 are located on the front side of the third data processing chip 801, and the input pad 803 of the third data processing chip 801 is connected through the eighth metal.
  • the structure 804 is electrically connected to the third internal pad 405, and the output pad 802 of the third data processing chip 801 is electrically connected to the third external pad 406 through the ninth metal connection structure 705, so that the third data processing chip 801 can pass the input.
  • the pad 803 receives the electrical signal induced by the magnetic induction sensor 41 through the eighth metal connection structure 804 and the third internal pad 405, and outputs the processed signal through the output pad 802, the ninth metal connection structure 705 and the third external connection pad 406. electric signal.
  • the back surface of the third data processing chip 801 is attached to the front surface of the magnetic induction sensor 41, and the eighth metal connection structure 804 and the ninth metal connection structure 705 are metal wires, and the eighth metal connection structure 804 and the ninth The intermediate portion of the metal connection structure 705 is suspended on both sides of the third data processing chip 801, and the two ends of the eighth metal connection structure 804 are electrically connected to the input pad 803 of the third data processing chip 801 and the third internal pad 405, respectively.
  • the two ends of the ninth metal connection structure 705 are electrically connected to the output pad 802 and the third external pad 406 of the third data processing chip 801, respectively.
  • the back surface of the third data processing chip 801 is attached to the front surface of the magnetic induction sensor 41, and the magnetic field sensing area 401 of the magnetic induction sensor 41 is sealed, so that it is not necessary to additionally form a sealing cover on the front surface of the magnetic induction sensor 41, thereby saving manufacturing costs.
  • the sensing signal of the magnetic induction sensor 41 and the sealing of the magnetic field sensing region 401 are realized.
  • the back surface of the first data processing chip 601 is attached to the front surface of the gyro sensor 21, and the fourth metal connection structure 606 has one end running through the back and the portion of the first data processing chip 601.
  • the thickness is electrically connected to the input pad 603 on the front side of the first data processing chip 601, the other end of the fourth metal connection structure 606 is electrically connected to the first internal pad 205, and one end of the fifth metal connection structure 607 runs through the first data.
  • the back surface and a portion of the thickness of the chip 601 are processed and electrically connected to the output pad 602 on the front side of the first data processing chip 601, and the other end of the fifth metal connection structure 607 is connected to the first external pad 206.
  • a first metal connection structure 207 that penetrates the back surface and a portion of the thickness of the gyro sensor 21 and the first external contact pad 206 on the front side of the gyro sensor 21 Electrical connection.
  • the back surface of the first data processing chip 601 is formed with a groove 608.
  • the groove 608 is located at the angular velocity sensing area.
  • the sealing cover of the sealing angular velocity sensing area 201 may not be formed during the formation of the gyro sensor 21, and the first data processing chip 601 is directly used as the sealing cover, thereby saving the manufacturing cost and realizing the first data processing.
  • the sensing signal of the chip 601 is processed and sealed against the angular velocity sensing area 201.
  • the back surface of the second data processing chip 701 is attached to the front surface of the acceleration sensor, and one end of the sixth metal connection structure 706 penetrates the back surface and a portion of the thickness of the second data processing chip 701, and The other end of the sixth metal connection structure 706 is electrically connected to the second internal pad 305, and the other end of the seventh metal connection structure 707 penetrates the second data processing chip 701.
  • the back side and part of the thickness are electrically connected to the output pad 702 on the front side of the second data processing chip 701, and one end of the seventh metal connection structure 707 is electrically connected to the second external pad 307.
  • a second metal connection structure 307 is formed in the acceleration sensor 31.
  • the second metal connection structure 307 penetrates the back surface and the partial thickness of the acceleration sensor 31, and is electrically connected to the second external connection pad 306 on the front surface of the acceleration sensor 31.
  • a back surface of the second data processing chip is formed with a groove (may be similar to the manner in which the back surface of the first data processing chip 601 in FIG. 29 is formed with a groove 608), and the second data processing
  • the groove is located above the acceleration sensing area, so that the sealing cover of the sealed acceleration sensing area may not be formed during the manufacturing process of the acceleration sensor, and the second data processing chip is directly used as the sealing cover. While saving the manufacturing cost, the sensing signal of the acceleration sensor is processed and the acceleration sensing area is sealed.
  • the back surface of the third data processing chip 801 is attached to the front surface of the magnetic induction sensor 41, and one end of the eighth metal connection structure 806 penetrates the back surface and a portion of the thickness of the third data processing chip 801, and The other end of the eighth metal connection structure 806 is electrically connected to the third internal pad 405, and the other end of the ninth metal connection structure 807 passes through the third data processing chip 801.
  • the back side and part of the thickness are electrically connected to the output pad on the front side of the third data processing chip, and the other end of the ninth metal connection structure 807 is electrically connected to the third external pad 406.
  • a third metal connection structure 407 is formed in the magnetic induction sensor 41.
  • the third metal connection structure 407 penetrates the back surface and a portion of the thickness of the magnetic induction sensor 41 and is electrically connected to the third external connection pad 406 on the front surface of the magnetic induction sensor 41.
  • a back surface of the third data processing chip is formed with a groove (may be similar to the manner in which the back surface of the first data processing chip 601 is formed with a groove 608 in FIG. 29), the third data.
  • the groove is located above the magnetic sensing area, so that the sealing cover of the sealed acceleration sensing area may not be formed during the manufacturing process of the magnetic induction sensor, and the third data processing chip is directly used as the sealing cover. The manufacturing cost of the magnetic induction sensor and the sealing of the magnetic field sensing area are realized while saving the manufacturing cost.
  • the fourth metal connection structure 608 is located on the surface of the input pad 603 of the first data processing chip 601, and the fifth metal connection structure 609 is located at the output pad 602 of the first data processing chip 601.
  • the first data processing chip 601 is flipped on the front surface of the gyro sensor 21, and the fourth metal connection structure 608 is electrically connected to the first internal pad 205.
  • the fifth metal connection structure 609 and the first external connection pad 206 are electrically connected. Electrical connection.
  • the sixth metal connection structure 708 is located on the input pad surface of the second data processing chip 701, and the seventh metal connection structure 709 is located on the surface of the output pad 702 of the second data processing chip 701.
  • the second data processing chip 701 is flipped on the front surface of the acceleration sensor 31, the sixth metal connection structure 708 is electrically connected to the second internal pad 305, and the seventh metal connection structure 709 is electrically connected to the second external connection pad 306.
  • the eighth metal connection structure 808 is located on the surface of the input pad 803 of the third data processing chip 801, and the ninth metal connection structure 809 is located on the surface of the output pad 802 of the third data processing chip 801.
  • the third data processing chip 801 is flipped on the front surface of the magnetic induction sensor 41, the eighth metal connection structure 808 is electrically connected to the third internal pad 405, and the ninth metal connection structure 809 is electrically connected to the sixth external connection 406 pad. .
  • a substrate 100 is provided.
  • the substrate 100 includes a first surface 101 and an opposite second surface 102.
  • the substrate 100 has interconnection lines.
  • the interconnection lines include the first substrate 100.
  • the gyro sensor module 61 and the acceleration sensor module 71 shown in FIGS. 26 and 27 are respectively mounted on the first surface 101 of the substrate 100, and the first external contact pads 206 of the gyro sensor module 61 pass through the first metal connection structure 109 and The interconnection (the first interconnection 140) is electrically connected, and the second external pad 306 of the acceleration sensor module 71 is electrically connected to the interconnection (the second interconnection 141) through the second metal connection structure 108;
  • the interconnection further includes a metal wiring layer 110 on the second surface 102 of the substrate 100, and a metal wiring layer 110 is formed on the second surface 102 of the substrate 100;
  • the magnetic induction sensor module 81 shown in FIG. 34 is mounted on the second surface 102 of the substrate 100, and the third external contact pad 406 of the magnetic induction sensor module 81 is electrically connected to the interconnection (metal wiring layer 110) through the third metal connection structure 407. ;
  • solder bumps are formed on the second surface 102 of the substrate 100, and the solder bumps are electrically connected to the interconnecting lines.
  • the solder bumps include a first solder bump 112, a second solder bump 114, and a third solder bump. From 113, the first solder bumps 112 are electrically connected to the first interconnecting lines 140, the second solder bumps 114 are electrically connected to the second interconnecting lines 141, and the third solder bumps 113 are electrically connected to the metal wiring layer 110.
  • the first metal connection structure 109 and the second metal connection structure 108 are metal wires formed by a wire bonding process.
  • the gyro sensor module 61 and the acceleration sensor module 71 shown in FIG. 29 and FIG. 30 are respectively mounted on the first surface 101 of the substrate 100, and the first external connection of the gyro sensor module 61
  • the pad 206 is electrically connected to the first interconnect line 140 through the first metal connection structure 207
  • the second outer contact pad 306 of the acceleration sensor module 71 is electrically connected to the second interconnect line 141 through the second metal connection structure 307
  • the magnetic induction sensor module 81 shown at 28 is mounted on the second surface 102 of the substrate 100, and the third external contact pad 406 of the magnetic induction sensor module 81 is electrically connected to the metal wiring layer 110 through the third metal connection structure 130.
  • the third metal connection structure 130 is a metal wire formed by a wire bonding process.
  • the two ends of the third metal connection structure 130 are electrically connected to the third external pad and the metal circuit layer, respectively, and the middle portion of the third metal connection structure 130 is suspended.
  • the magnetic induction sensor On both sides of the magnetic induction sensor.
  • the gyro sensor module 61 and the acceleration sensor module 71 shown in FIGS. 32 and 33 are respectively mounted on the first surface 101 of the substrate 100, and the first of the gyro sensor module 61
  • the external pad 206 is electrically connected to the first interconnection 140 through the first metal connection structure 207
  • the second external connection pad 306 of the acceleration sensor module 71 is electrically connected to the second interconnection 141 through the second metal connection structure 307
  • the magnetic induction sensor module 81 shown in FIG. 31 is mounted on the second surface 102 of the substrate 100, and the third external contact pad 406 of the magnetic induction sensor module 81 is electrically connected to the metal wiring layer 110 through the third metal connection structure 407.
  • the package structure can be combined by using any of the modules shown in FIG. 26 to FIG. 34 to implement integrated packaging of the gyro sensor module 61, the acceleration sensor module 71, and the magnetic induction sensor module 81.
  • the embodiment of the invention further provides a MEMS sensor package structure.
  • the method includes:
  • a substrate 100 including a first surface 101 having an interconnecting line and an opposite second surface 102, the interconnecting line including a first interconnecting line 140 and a second interconnecting layer in the substrate 100 Connecting line 141;
  • the magnetic induction sensor module 81 includes a magnetic induction sensor 41 connected to the magnetic induction sensor 41. a third data processing chip 801 and a third external pad 406;
  • the gyro sensor module 61 and the acceleration sensor module 71 are respectively mounted on the first surface of the substrate, and the first external pad 206 of the gyro sensor module 61 passes through the first metal connection structure 109 and the interconnection (the first interconnection 140) Electrically connected, the second external pad 306 of the acceleration sensor module 71 is electrically connected to the interconnection (second interconnection 141) through the second metal connection structure 108;
  • the interconnect line further includes a metal circuit layer 110 on the second surface 102 of the substrate 100;
  • the magnetic induction sensor module 81 is mounted on the second surface 102 of the substrate 100, and the third external connection pad 406 of the magnetic induction sensor module 81 is electrically connected to the interconnection (metal circuit layer 110) through the third metal connection structure 407;
  • solder bumps on the second surface 102 of the substrate 100, the solder bumps being electrically connected to the interconnect lines, the solder bumps including the first solder bumps 112, the second solder bumps 114, and the third solder
  • the protrusion 113, the first solder bump 112 is electrically connected to the first interconnecting line 140, the second solder bump 114 is electrically connected to the second interconnecting line 141, and the third solder bump 113 is electrically connected to the metal wiring layer 110.
  • the gyro sensor includes a front surface and an opposite back surface, the front surface of the gyro sensor has a plurality of first inner pads and a first outer pad, and the first data processing chip is located on the front surface of the gyro sensor.
  • the first data processing chip is electrically connected to the first inner pad and the first outer pad
  • the acceleration sensor includes a front surface and an opposite back surface
  • the front surface of the acceleration sensor has a plurality of second inner pads and second outer pads
  • the second data processing chip is electrically connected to the front surface of the acceleration sensor
  • the second data processing chip is electrically connected to the second inner pad and the second outer pad.
  • the magnetic induction sensor includes a front surface and an opposite back surface, and the front surface of the magnetic induction sensor has a third internal solder. And a third external processing pad, the third data processing chip is located on the front surface of the magnetic induction sensor, and the third data processing chip is electrically connected to the third internal pad and the third external pad.
  • the first data processing chip includes an input pad and an output pad, and an input pad of the first data processing chip is electrically connected to the first internal pad, and an output pad of the first data processing chip is The first external pad is electrically connected, the second data processing chip includes an input pad and an output pad, the input pad of the second data processing chip is electrically connected to the second internal pad, and the output of the second data processing chip is soldered
  • the disk is electrically connected to the second external processing pad, the third data processing chip includes an input pad and an output pad, and the input pad of the third data processing chip is electrically connected to the third internal pad, and the third data processing chip The output pad is electrically connected to the third external pad.
  • the first data processing chip includes a front side and an opposite back side, the input pad and the output pad are located on a front side of the first data processing chip, and the input pad of the first data processing chip is connected through the fourth metal
  • the structure is electrically connected to the first internal pad
  • the output pad of the first data processing chip is electrically connected to the first external pad through a fifth metal connection structure
  • the second data processing chip includes a front surface and an opposite back surface
  • the disk and the output pad are located on the front side of the second data processing chip
  • the input pad of the second data processing chip is electrically connected to the second internal pad through the sixth metal connection structure
  • the output pad of the second data processing chip passes the seventh
  • the metal connection structure is electrically connected to the second external processing pad
  • the third data processing chip includes a front surface and an opposite back surface
  • the input pad and the output pad are located on the front side of the third data processing chip
  • the input processing of the third data processing chip The disk is electrically connected to the third internal pad through the eighth
  • the back surface of the first data processing chip is attached to the front surface of the gyro sensor
  • the back surface of the second data processing chip is attached to the front surface of the acceleration sensor
  • the back surface of the third data processing chip is attached to the magnetic sensor.
  • a front surface of the sensor a fourth metal connection structure, a fifth metal connection structure, a sixth metal connection structure, a seventh metal connection structure, an eighth metal connection structure, and a ninth metal connection structure are metal wires, a fourth metal connection structure, and a The middle portion of the five metal connection structure is suspended on both sides of the first data processing chip, and the two ends of the fourth metal connection structure are electrically connected to the input pad of the first data processing chip and the first internal pad, respectively, and the fifth metal connection The two ends of the structure are electrically connected to the output pads of the first data processing chip and the first external pads, respectively, and the intermediate portions of the sixth metal connection structure and the seventh metal connection structure are suspended on both sides of the second data processing chip, sixth The two ends of the metal connection structure are electrically connected to the input pads of the second data processing chip and the second internal pads, respectively, and the seventh metal connection The output pads of the second data processing chip and the second external pads are respectively electrically connected, and the intermediate portions of the seventh metal connection structure and the eighth metal connection structure are suspended on both sides
  • the back surface of the first data processing chip is attached to the front surface of the gyro sensor
  • the back surface of the second data processing chip is attached to the front surface of the acceleration sensor
  • the back surface of the third data processing chip is attached to the magnetic sensor.
  • the fourth metal connection structure penetrating the back surface and a portion of the thickness of the first data processing chip, and electrically connected to the input pad of the front surface of the first data processing chip
  • the fifth metal connection structure penetrating the back surface of the first data processing chip and a portion of the thickness and electrically connected to the output pad on the front side of the first data processing chip
  • the sixth metal connection structure penetrating through the back surface and a portion of the thickness of the second data processing chip, and electrically connected to the input pad on the front side of the second data processing chip
  • the seventh metal connection structure penetrates the back surface and the partial thickness of the second data processing chip, and is electrically connected to the output pad of the front surface of the second data processing chip
  • the eighth metal connection structure penetrates the back surface and the partial thickness of the third data processing chip, and Electrically connected to the input pad on the front side of the third data processing chip
  • the ninth metal connection structure runs through the third The back side and a portion of the thickness of the data processing chip are electrically connected to
  • the back surfaces of the first data processing chip, the second data processing chip, and the third data processing chip form a recess.
  • the fourth metal connection structure is located on the input pad surface of the first data processing chip
  • the fifth metal connection structure is located on the output pad surface of the first data processing chip
  • the sixth metal connection structure is located in the second data processing
  • the seventh metal connection structure is located on the output pad surface of the second data processing chip
  • the eighth metal connection structure is located on the input pad surface of the third data processing chip
  • the ninth metal connection structure is located in the third data Processing the output pad surface of the chip
  • the first data processing chip is flipped on the front surface of the gyro sensor
  • the second data processing chip is flipped on the front surface of the acceleration sensor
  • the third data processing chip is flipped On the front side of the magnetic induction sensor.
  • the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure and the second metal connection structure are metal lines, and the two ends of the first metal connection structure are respectively An external pad is electrically connected to the first interconnecting line, and a middle portion of the first metal connecting structure is suspended on both sides of the gyro sensor, and two ends of the second metal connecting structure are respectively connected to the second external pad and the second interconnecting line Electrically connected, the middle portion of the second metal connection structure is suspended on both sides of the acceleration sensor.
  • the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, the first metal connection structure penetrating the back surface and the partial thickness of the gyro sensor, and the first surface of the gyro sensor
  • the external pad is electrically connected
  • the second metal connection structure penetrates the back surface and the partial thickness of the acceleration sensor and is electrically connected to the second external pad of the front surface of the acceleration sensor.
  • the back side of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure is a metal line, and the two ends of the third metal connection structure are respectively electrically connected to the third external connection pad and the metal circuit layer.
  • the middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor.
  • the back of the magnetic induction sensor is attached to the second surface of the substrate, and the third metal connection structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor and is electrically connected to the third external pad of the front surface of the magnetic induction sensor.

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Abstract

A MEMS sensor packaging structure and a fabricating method thereof. The MEMS sensor packaging structure comprises: a substrate comprising a first surface, an opposite second surface, and an interconnect circuit; and a gyroscope sensor, an accelerometer sensor, and a magnetic induction sensor. All the gyroscope sensor, accelerometer sensor, and magnetic induction sensor comprise top sides and opposite rear sides. The top side of the gyroscope sensor comprises a first external pad. The top side of the accelerometer sensor comprises a second external pad. The top side of the magnetic induction sensor comprises a third external pad. The gyroscope sensor and the accelerometer sensor are mounted on the first surface of the substrate. The first external pad of the gyroscope sensor is electrically connected to a first interconnect circuit. The second external pad of the accelerometer sensor is electrically connected to a second interconnect circuit. The magnetic induction sensor is mounted on the second surface of the substrate. The third external pad of the magnetic induction sensor is electrically connected to the interconnect circuit. The packaging structure in the invention implements integrated packaging of sensors and achieves a reduced size thereof.

Description

MEMS传感器封装结构及其形成方法MEMS sensor package structure and forming method thereof
本申请要求下述2项中国专利申请的优先权,其全部内容通过引用结合在本申请中:The present application claims the priority of the following two Chinese patent applications, the entire contents of which are hereby incorporated by reference:
1、申请日2016-12-30、申请号201611264764.7、发明名称为“MEMS传感器封装结构及其形成方法”;1. The application date is 2016-12-30, the application number is 201611264764.7, and the invention name is “MEMS sensor package structure and its forming method”;
2、申请日2016-12-30、申请号201621483484.0、发明名称为“MEMS传感器封装结构”。2. The application date is 2016-12-30, the application number is 201621483484.0, and the invention name is “MEMS sensor package structure”.
技术领域Technical field
本发明涉及半导体技术领域,特别涉及一种MEMS传感器封装结构及其形成方法。The present invention relates to the field of semiconductor technologies, and in particular, to a MEMS sensor package structure and a method of forming the same.
背景技术Background technique
从二十世纪八十年代末开始,随着微机电系统(Micro-Electro-Mechanical-System,MEMS)技术的发展,各种传感器实现了微小型化。Since the end of the 1980s, with the development of Micro-Electro-Mechanical-System (MEMS) technology, various sensors have been miniaturized.
目前各种传感器中应用较多的主要包括MEMS加速度传感器、MEMS陀螺仪传感器和MEMS磁感应传感器。MEMS加速度传感器是用于检测加速度的装置,MEMS陀螺仪传感器是用于检测加速度的装置,MEMS磁感应传感器是用于测量空间中磁场的装置。At present, many applications of various sensors mainly include MEMS acceleration sensors, MEMS gyro sensors and MEMS magnetic induction sensors. The MEMS accelerometer is a device for detecting acceleration, the MEMS gyroscope sensor is a device for detecting acceleration, and the MEMS magnetic sensor is a device for measuring a magnetic field in a space.
目前MEMS加速度传感器、MEMS陀螺仪传感器和MEMS磁感应传感器均已在手机或汽车电子领域等应用,然而现在的MEMS加速度传感器、MEMS陀螺仪传感器和MEMS磁感应传感器均是分开设计制作,然后独立进行封装的。由于各种传感器分别设计制作并独立进行封装,这使得现有的MEMS器件体积较大、成本较高。At present, MEMS accelerometers, MEMS gyro sensors and MEMS magnetic sensors have been applied in mobile phones or automotive electronics. However, MEMS accelerometers, MEMS gyroscope sensors and MEMS magnetic sensors are designed separately and then packaged separately. . Since various sensors are separately designed and packaged independently, the existing MEMS devices are bulky and costly.
发明内容Summary of the invention
本发明解决的问题是怎样减小MEMS器件的体积,并实现加速度传感器、陀螺仪传感器和磁感应传感器的集成封装。The problem solved by the present invention is how to reduce the volume of the MEMS device and realize an integrated package of the acceleration sensor, the gyro sensor and the magnetic induction sensor.
为解决上述问题,本发明技术方案提供了一种MEMS传感器封装结构的形成方法,包括:To solve the above problems, the technical solution of the present invention provides a method for forming a MEMS sensor package structure, including:
提供基板,所述基板包括第一表面和相对的第二表面,所述基板具有互连线路;提供陀螺仪传感器、加速度传感器和磁感应传感器,所述陀螺仪传感器、加速度传感器和磁感应传感器均包括正面和相对的背面,所述陀螺仪传感器的正面包括若干第一外接焊盘,所述加速度传感器的正面包括若干第二外接焊盘,所述磁感应传感器的正面包括若干第三外接焊盘;将所述陀螺仪传感器和加速度传感器分别安装在基板的第一表面,陀螺仪传感器的第一外接焊盘通过第一金属连接结构与互连线路电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与互连线路电连接;将所述磁感应传感器安装在基板的第二表面,磁感应传感器的第三外接焊盘通过第三金属连接结构与互连线路电连接;在所述基板的第二表面上形成若干焊接凸起,所述焊接凸起与互连线路电连接,焊接凸起用于与外部电路电连接。Providing a substrate including a first surface and an opposite second surface, the substrate having an interconnection; providing a gyro sensor, an acceleration sensor, and a magnetic induction sensor, the gyro sensor, the acceleration sensor, and the magnetic induction sensor each including a front surface And the opposite back surface, the front surface of the gyro sensor includes a plurality of first external pads, the front surface of the acceleration sensor includes a plurality of second external pads, and the front surface of the magnetic induction sensor includes a plurality of third external pads; The gyro sensor and the acceleration sensor are respectively mounted on the first surface of the substrate, and the first external pad of the gyro sensor is electrically connected to the interconnection through the first metal connection structure, and the second external pad of the acceleration sensor passes through the second metal The connection structure is electrically connected to the interconnection line; the magnetic induction sensor is mounted on the second surface of the substrate, and the third external connection pad of the magnetic induction sensor is electrically connected to the interconnection through the third metal connection structure; Forming a plurality of solder bumps on the surface, the solder bumps and interconnect lines It is electrically connected to solder bumps for connection with an external circuit.
可选的,所述互连线路包括位于基板中的第一互连线路和第二互连线路,以及位于第二表面上的金属线路层,第一互连线路、第二互连线路与金属线路层相互绝缘,陀螺仪传感器的第一外接焊盘通过第一金属连接结构与第一互连线路电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与第二互连线路电连接,磁感应传感器的第三外接焊盘通过第三金属连接结构与金属线路层电连接;在所述基板的第二表面上形成若干焊接凸起,所述焊机凸起包括第一焊接凸起、第二焊接凸起和第三焊接凸起,所述第一焊接凸起与第一互连线路电连接,第二焊接凸起与第二互连线路电连接,第三焊接凸起与金属线路层电连接。Optionally, the interconnection line includes a first interconnection line and a second interconnection line in the substrate, and a metal circuit layer on the second surface, the first interconnection line, the second interconnection line, and the metal The circuit layers are insulated from each other, and the first external pads of the gyro sensor are electrically connected to the first interconnection through the first metal connection structure, and the second external pads of the acceleration sensor are electrically connected to the second interconnection through the second metal connection structure Connecting, the third external pad of the magnetic induction sensor is electrically connected to the metal circuit layer through the third metal connection structure; forming a plurality of solder bumps on the second surface of the substrate, the welder protrusion including the first solder bump a second solder bump and a third solder bump, the first solder bump is electrically connected to the first interconnecting line, the second solder bump is electrically connected to the second interconnecting line, and the third solder bump is connected to the metal The circuit layer is electrically connected.
可选的,所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,第一金属连接结构和第二金属连接结构为金属线,第一金属连接结构 的两端分别与第一外接焊盘和第一互连线路电连接,第一金属连接结构的中间部分悬空在陀螺仪传感器两侧,第二金属连接结构的两端分别与第二外接焊盘和第二互连线路电连接,第二金属连接结构的中间部分悬空在加速度传感器两侧。Optionally, the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure and the second metal connection structure are metal wires, and the two ends of the first metal connection structure are respectively connected to the first external connection The pad is electrically connected to the first interconnecting line, and a middle portion of the first metal connecting structure is suspended on both sides of the gyro sensor, and two ends of the second metal connecting structure are electrically connected to the second external pad and the second interconnecting line, respectively The middle portion of the second metal connection structure is suspended on both sides of the acceleration sensor.
可选的,还包括:形成至少包覆所述金属线的点胶层。Optionally, the method further includes: forming a dispensing layer covering at least the metal wire.
可选的,在形成点胶层后,将所述磁感应传感器安装在基板的第二表面;将所述磁感应传感器安装在基板的第二表面之后,在在所述基板的第二表面上形成若干焊接凸起。Optionally, after forming the dispensing layer, the magnetic induction sensor is mounted on the second surface of the substrate; after the magnetic induction sensor is mounted on the second surface of the substrate, forming a plurality on the second surface of the substrate Welding bumps.
可选的,所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,所述第一金属连接结构贯穿陀螺仪传感器的背面和部分厚度,并与陀螺仪传感器正面的第一外接焊盘电连接,所述第二金属连接结构贯穿加速度传感器的背面与和部分厚度,并与加速度传感器正面的第二外接焊盘电连接。Optionally, the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, the first metal connection structure penetrates the back surface and a portion of the thickness of the gyro sensor, and is soldered to the first external surface of the front surface of the gyro sensor. The disk is electrically connected, and the second metal connecting structure penetrates the back surface and the partial thickness of the acceleration sensor, and is electrically connected to the second external pad of the front surface of the acceleration sensor.
可选的,所述陀螺仪传感器和加速度传感器分别倒装在基板的第一表面上,所述第一金属连接结构位于第一外接焊盘的表面,第二金属连接结构位于第二外接焊盘的表面。Optionally, the gyro sensor and the acceleration sensor are respectively flipped on the first surface of the substrate, the first metal connection structure is located on a surface of the first external connection pad, and the second metal connection structure is located on the second external connection pad s surface.
可选的,所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,所述陀螺仪传感器还包括角速度感应区,陀螺仪传感器正面上具有第一密封盖,第一密封盖密封所述角速度感应区,若干第一外接焊盘位于第一密封盖两侧;所述加速度传感器还包括加速度感应区,加速度传感器正面上具有第二密封盖,第二密封盖密封所述加速度感应区,若干第二外接焊盘位于第二密封盖两侧。Optionally, the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the gyro sensor further includes an angular velocity sensing area. The front surface of the gyro sensor has a first sealing cover, and the first sealing cover is sealed. In the angular velocity sensing area, a plurality of first external pads are located on both sides of the first sealing cover; the acceleration sensor further includes an acceleration sensing area, the second surface of the acceleration sensor has a second sealing cover, and the second sealing cover seals the acceleration sensing area, A plurality of second outer pads are located on both sides of the second sealing cover.
可选的,所述磁感应传感器倒装在基板的第二表面上,所述第三金属连接结构位于第三外接焊盘的表面;或者所述磁感应传感器背面贴合于基板的第二表面,第三金属连接结构为金属线,第三金属连接结构的两端分别与第三外接焊盘和金属层电连接,第三金属连接结构的中间部分悬空在磁感应传感器两侧;或者所述磁感应传感器背面贴合于基板的第二表面, 所述第三金属连接结构贯穿磁感应传感器的背面和部分厚度,并与磁感应传感器正面的第三外接焊盘电连接。Optionally, the magnetic induction sensor is flipped on the second surface of the substrate, the third metal connection structure is located on the surface of the third external connection pad; or the back surface of the magnetic induction sensor is attached to the second surface of the substrate, The three metal connection structure is a metal wire, and the two ends of the third metal connection structure are electrically connected to the third outer pad and the metal layer respectively, and the middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor; or the back of the magnetic induction sensor Attached to the second surface of the substrate, the third metal connection structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor and is electrically connected to the third external connection pad on the front surface of the magnetic induction sensor.
可选的,还包括数据处理芯片,数据处理芯片与互连线路电连接。Optionally, the data processing chip is further included, and the data processing chip is electrically connected to the interconnection.
可选的,所述互连线路包括位于基板中的第三互连线路和第四互连线路,以及位于基板的第二表面上的若干第一金属线路层和若干第二金属线路层,第三互连线路、第四互连线路、第一金属线路层和第二金属线路层之间相互绝缘;陀螺仪传感器的第一外接焊盘通过第一金属连接结构与第三互连线路电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与第四互连线路电连接;磁感应传感器的第三外接焊盘通过第三金属连接结构与第一金属线路层电连接;数据处理芯片安装在基板的第二表面,数据处理芯片与第三互连线路、第四互连线路、第一金属线路层和第二金属线路层电连接;焊接凸起位于基板的第二表面上的第二金属线路层的表面。Optionally, the interconnection line includes a third interconnection line and a fourth interconnection line located in the substrate, and a plurality of first metal circuit layers and a plurality of second metal circuit layers on the second surface of the substrate, The three interconnect lines, the fourth interconnect line, the first metal line layer and the second metal line layer are insulated from each other; the first external pad of the gyro sensor is electrically connected to the third interconnect line through the first metal connection structure The second external pad of the acceleration sensor is electrically connected to the fourth interconnection through the second metal connection structure; the third external pad of the magnetic induction sensor is electrically connected to the first metal circuit layer through the third metal connection structure; the data processing chip Mounted on the second surface of the substrate, the data processing chip is electrically connected to the third interconnecting line, the fourth interconnecting line, the first metal wiring layer and the second metal wiring layer; the solder bump is located on the second surface of the substrate The surface of the two metal circuit layers.
可选的,所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,第一金属连接结构和第二金属连接结构为金属线,第一金属连接结构的两端分别与第一外接焊盘和第三互连线路电连接,第一金属连接结构的中间部分悬空在陀螺仪传感器两侧,第二金属连接结构的两端分别与第二外接焊盘和第四互连线路电连接,第二金属连接结构的中间部分悬空在加速度传感器两侧;或者所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,所述第一金属连接结构贯穿陀螺仪传感器的背面和部分厚度,并与陀螺仪传感器正面的第一外接焊盘电连接,所述第二金属连接结构贯穿加速度传感器的背面与和部分厚度,并与加速度传感器正面的第二外接焊盘电连接;或者所述陀螺仪传感器和加速度传感器分别倒装在基板的第一表面上,所述第一金属连接结构位于第一外接焊盘的表面,第二金属连接结构位于第二外接焊盘的表面。Optionally, the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure and the second metal connection structure are metal wires, and the two ends of the first metal connection structure are respectively connected to the first external connection The pad and the third interconnection are electrically connected, and a middle portion of the first metal connection structure is suspended on both sides of the gyro sensor, and two ends of the second metal connection structure are electrically connected to the second external pad and the fourth interconnection line, respectively a middle portion of the second metal connection structure is suspended on both sides of the acceleration sensor; or the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure penetrates the back surface and the portion of the gyro sensor a thickness and electrically connected to the first external pad of the front surface of the gyro sensor, the second metal connection structure penetrating through the back surface and the partial thickness of the acceleration sensor, and electrically connected to the second external pad of the front surface of the acceleration sensor; The gyro sensor and the acceleration sensor are respectively flipped on the first surface of the substrate, the first metal connection Located on the external surface of the first pad, the second surface of the second metal structure is located external connection pad.
可选的,将所述陀螺仪传感器和加速度传感器分别安装在基板的第一表面和将数据处理芯片安装在基板的第二表面步骤之后,还包括:形成至少包覆所述金属线的点胶层。Optionally, after the step of mounting the gyro sensor and the acceleration sensor on the first surface of the substrate and the second surface of the substrate, the method further comprises: forming a glue covering at least the metal wire Floor.
可选的,所述信号处理芯片倒装在基板的第二表面;或者所述信号处 理芯片的背面贴合于基板的第二表面,且所述信号处理芯片通过金属线与第三互连线路、第四互连线路和第二金属线路层电连接。Optionally, the signal processing chip is flipped on the second surface of the substrate; or the back surface of the signal processing chip is attached to the second surface of the substrate, and the signal processing chip passes through the metal wire and the third interconnection The fourth interconnecting line and the second metal wiring layer are electrically connected.
可选的,所述互连线路包括位于基板中的第五互连线路和第六互连线路,以及位于基板的第一表面的若干第三金属线路层和若干第四金属线路层,第五互连线路、第六互连线路、第三金属线路层和第四金属线路层相互绝缘;陀螺仪传感器的第一外接焊盘通过第一金属连接结构与第三金属线路层电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与第四金属线路层电连接;磁感应传感器的第三外接焊盘通过第三金属连接结构与第五互连线路电连接;数据处理芯片安装在基板的第一表面,数据处理芯片与第三金属线路层、第四金属线路层、第五互连线路和第六互连线路电连接;所述互连线路还包括位于基板的第二表面上的若干第五金属线路层,第五金属线路层与第六互连线路电连接,焊接凸起位于第五金属线路层的表面,且与第五金属线路层电连接。Optionally, the interconnection line includes a fifth interconnection line and a sixth interconnection line located in the substrate, and a plurality of third metal circuit layers and a plurality of fourth metal circuit layers located on the first surface of the substrate, and a fifth The interconnection line, the sixth interconnection line, the third metal circuit layer and the fourth metal circuit layer are insulated from each other; the first external pad of the gyro sensor is electrically connected to the third metal circuit layer through the first metal connection structure, the acceleration sensor The second external pad is electrically connected to the fourth metal circuit layer through the second metal connection structure; the third external connection pad of the magnetic induction sensor is electrically connected to the fifth interconnection line through the third metal connection structure; the data processing chip is mounted on the substrate a first surface, the data processing chip is electrically connected to the third metal circuit layer, the fourth metal circuit layer, the fifth interconnection, and the sixth interconnection; the interconnection further includes a second surface on the substrate a plurality of fifth metal circuit layers, the fifth metal circuit layer is electrically connected to the sixth interconnection circuit, the solder bumps are located on the surface of the fifth metal circuit layer, and the fifth metal circuit layer Connection.
可选的,还包括第一数据处理芯片、第二数据处理芯片和第三数据处理芯片,所述第一数据处理芯片与陀螺仪传感器电连接,所述第二数据处理芯片与加速度传感器电连接,所述第三数据处理芯片与磁感应传感器电连接。Optionally, the method further includes a first data processing chip, a second data processing chip, and a third data processing chip, the first data processing chip is electrically connected to the gyro sensor, and the second data processing chip is electrically connected to the acceleration sensor The third data processing chip is electrically connected to the magnetic induction sensor.
可选的,所述互连线路包括位于基板中的第一互连线路和第二互连线路,以及位于基板的第二表面上的金属线路层;陀螺仪传感器的第一外接焊盘通过第一金属连接结构与第一互连线路电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与第二互连线路电连接;磁感应传感器的第三外接焊盘通过第三金属连接结构与金属线路层电连接;在基板的第二表面形成焊接凸起,所述焊接凸起包括第一焊接凸起、第二焊接凸起和第三焊接凸起,第一焊接凸起与第一互连线路电连接,第二焊接凸起与第二互连线路电连接,第三焊接凸起与金属线路层电连接。Optionally, the interconnection line includes a first interconnection line and a second interconnection line in the substrate, and a metal circuit layer on the second surface of the substrate; the first external connection pad of the gyro sensor passes the a metal connection structure is electrically connected to the first interconnection line, and the second external connection pad of the acceleration sensor is electrically connected to the second interconnection line through the second metal connection structure; the third external connection pad of the magnetic induction sensor passes through the third metal connection structure Electrically connecting with the metal circuit layer; forming a solder bump on the second surface of the substrate, the solder bump including the first solder bump, the second solder bump and the third solder bump, the first solder bump and the first The interconnection line is electrically connected, the second solder bump is electrically connected to the second interconnecting line, and the third solder bump is electrically connected to the metal wiring layer.
可选的,陀螺仪传感器的正面具有若干第一内部焊盘和第一外接焊盘,第一数据处理芯片位于陀螺仪传感器的正面上,第一数据处理芯片与第一内部焊盘和第一外接焊盘电连接,加速度传感器的正面具有若干第二内部 焊盘和第二外接焊盘,第二数据处理芯片位于加速度传感器的正面,第二数据处理芯片与第二内部焊盘和第二外接焊盘电连接,磁感应传感器的正面具有第三内部焊盘和第三外接焊盘,第三数据处理芯片位于磁感应传感器正面上,第三数据处理芯片与第三内部焊盘和第三外接焊盘电连接。Optionally, the front surface of the gyro sensor has a plurality of first internal pads and a first external pad, the first data processing chip is located on the front surface of the gyro sensor, the first data processing chip and the first internal pad and the first The external pad is electrically connected. The front surface of the acceleration sensor has a plurality of second internal pads and a second external pad. The second data processing chip is located on the front surface of the acceleration sensor, and the second data processing chip is connected to the second internal pad and the second external connection. The pad is electrically connected, the front surface of the magnetic induction sensor has a third inner pad and a third outer pad, the third data processing chip is located on the front surface of the magnetic induction sensor, and the third data processing chip and the third inner pad and the third outer pad Electrical connection.
可选的,所述第一数据处理芯片包括正面和相对的背面,所述第一数据处理芯片的正面具有输入焊盘和输出焊盘,第一数据处理芯片的输入焊盘通过第四金属连接结构与第一内部焊盘电连接,第一数据处理芯片的输出焊盘通过第五金属连接结构与第一外接焊盘电连接,所述第二数据处理芯片包括正面和相对的背面,输入焊盘和输出焊盘位于第二数据处理芯片的正面,第二数据处理芯片的输入焊盘通过第六金属连接结构与第二内部焊盘电连接,第二数据处理芯片的输出焊盘通过第七金属连接结构与第二外接焊盘电连接,所述第三数据处理芯片包括正面和相对的背面,输入焊盘和输出焊盘位于第三数据处理芯片的正面,第三数据处理芯片的输入焊盘通过第八金属连接结构与第三内部焊盘电连接,第三数据处理芯片的输出焊盘通过第九金属连接结构与第三外接焊盘电连接。Optionally, the first data processing chip includes a front surface and an opposite back surface, and the front surface of the first data processing chip has an input pad and an output pad, and the input pad of the first data processing chip is connected through the fourth metal The structure is electrically connected to the first internal pad, the output pad of the first data processing chip is electrically connected to the first external pad through a fifth metal connection structure, the second data processing chip includes a front surface and an opposite back surface, and the input solder The disk and the output pad are located on the front side of the second data processing chip, the input pad of the second data processing chip is electrically connected to the second internal pad through the sixth metal connection structure, and the output pad of the second data processing chip passes the seventh The metal connection structure is electrically connected to the second external processing pad, the third data processing chip includes a front surface and an opposite back surface, the input pad and the output pad are located on the front side of the third data processing chip, and the input processing of the third data processing chip The disk is electrically connected to the third internal pad through the eighth metal connection structure, and the output pad of the third data processing chip passes through the ninth metal connection structure and the External pads are electrically connected.
可选的,所述第一数据处理芯片的背面贴合于陀螺仪传感器的正面,第二数据处理芯片的背面贴合于加速度传感器的正面,第三数据处理芯片的背面贴合于磁感应传感器的正面;或者所述第一数据处理芯片倒装在陀螺仪传感器的正面上,所述第二数据处理芯片倒装在加速度传感器的正面上,所述第三数据处理芯片倒装在磁感应传感器的正面上-。Optionally, the back surface of the first data processing chip is attached to the front surface of the gyro sensor, the back surface of the second data processing chip is attached to the front surface of the acceleration sensor, and the back surface of the third data processing chip is attached to the magnetic induction sensor. Front side; or the first data processing chip is flipped on the front side of the gyro sensor, the second data processing chip is flipped on the front side of the acceleration sensor, and the third data processing chip is flipped on the front side of the magnetic induction sensor on-.
可选的,所述第一数据处理芯片的背面贴合于陀螺仪传感器的正面,第二数据处理芯片的背面贴合于加速度传感器的正面,第三数据处理芯片的背面贴合于磁感应传感器的正面时,所述第一数据处理芯片、第二数据处理芯片和第三数据处理芯片的背面形成凹槽。Optionally, the back surface of the first data processing chip is attached to the front surface of the gyro sensor, the back surface of the second data processing chip is attached to the front surface of the acceleration sensor, and the back surface of the third data processing chip is attached to the magnetic induction sensor. The front side of the first data processing chip, the second data processing chip, and the third data processing chip form a groove.
可选的,所述陀螺仪传感器为三轴陀螺仪传感器,所述加速度传感器为三轴加速度传感器,所述磁感应传感器为三轴磁感应传感器。Optionally, the gyro sensor is a three-axis gyro sensor, the acceleration sensor is a three-axis acceleration sensor, and the magnetic induction sensor is a three-axis magnetic induction sensor.
本发明还提供了一种MEMS传感器封装结构,包括:The invention also provides a MEMS sensor package structure, comprising:
基板,所述基板包括第一表面和相对的第二表面,所述基板具有互连线路;陀螺仪传感器、加速度传感器和磁感应传感器,所述陀螺仪传感器、加速度传感器和磁感应传感器均包括正面和相对的背面,所述陀螺仪传感器的正面包括若干第一外接焊盘,所述加速度传感器的正面包括若干第二外接焊盘,所述磁感应传感器的正面包括若干第三外接焊盘;所述陀螺仪传感器和加速度传感器安装在基板的第一表面,陀螺仪传感器的第一外接焊盘通过第一金属连接结构与互连线路电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与互连线路电连接;所述磁感应传感器安装在基板的第二表面,磁感应传感器的第三外接焊盘通过第三金属连接结构与互连线路电连接;位于所述基板第二表面上的若干焊接凸起,所述焊接凸起与互连线路电连接,焊接凸起用于与外部电路电连接。a substrate including a first surface and an opposite second surface, the substrate having interconnection lines; a gyro sensor, an acceleration sensor, and a magnetic induction sensor, the gyro sensor, the acceleration sensor, and the magnetic induction sensor each including a front surface and a relative The front surface of the gyro sensor includes a plurality of first external pads, the front surface of the acceleration sensor includes a plurality of second external pads, and the front surface of the magnetic induction sensor includes a plurality of third external pads; the gyroscope The sensor and the acceleration sensor are mounted on the first surface of the substrate, and the first external pad of the gyro sensor is electrically connected to the interconnection through the first metal connection structure, and the second external connection pad of the acceleration sensor passes through the second metal connection structure and Connecting the magnetic connection sensor; the magnetic induction sensor is mounted on the second surface of the substrate; the third external connection pad of the magnetic induction sensor is electrically connected to the interconnection through the third metal connection structure; and a plurality of solder bumps on the second surface of the substrate The solder bump is electrically connected to the interconnecting line, and the solder bump is It is electrically connected to an external circuit.
可选的,所述互连线路包括位于基板中的第一互连线路和第二互连线路,以及位于第二表面上的金属线路层,第一互连线路、第二互连线路与金属线路层相互绝缘,陀螺仪传感器的第一外接焊盘通过第一金属连接结构与第一互连线路电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与第二互连线路电连接,磁感应传感器的第三外接焊盘通过第三金属连接结构与金属线路层电连接;位于基板的第二表面的若干焊接凸起,所述焊机凸起包括第一焊接凸起、第二焊接凸起和第三焊接凸起,所述第一焊接凸起与第一互连线路电连接,第二焊接凸起与第二互连线路电连接,第三焊接凸起与金属线路层电连接。Optionally, the interconnection line includes a first interconnection line and a second interconnection line in the substrate, and a metal circuit layer on the second surface, the first interconnection line, the second interconnection line, and the metal The circuit layers are insulated from each other, and the first external pads of the gyro sensor are electrically connected to the first interconnection through the first metal connection structure, and the second external pads of the acceleration sensor are electrically connected to the second interconnection through the second metal connection structure Connecting, the third external pad of the magnetic induction sensor is electrically connected to the metal circuit layer through the third metal connection structure; a plurality of solder bumps on the second surface of the substrate, the welder protrusion including the first solder bump, the second a solder bump and a third solder bump, the first solder bump is electrically connected to the first interconnecting line, the second solder bump is electrically connected to the second interconnecting line, and the third solder bump is electrically connected to the metal wiring layer connection.
可选的,所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,第一金属连接结构和第二金属连接结构为金属线,第一金属连接结构的两端分别与第一外接焊盘和第一互连线路电连接,第一金属连接结构的中间部分悬空在陀螺仪传感器两侧,第二金属连接结构的两端分别与第二外接焊盘和第二互连线路电连接,第二金属连接结构的中间部分悬空在加速度传感器两侧;或者所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,所述第一金属连接结构贯穿陀螺仪传感器的背面和部分厚度,并与陀螺仪传感器正面的第一外接焊盘电连接,所述第二金属连接结构贯穿加速度传感器的背面与和部分厚度,并与加速度传感器正面的第二外接 焊盘电连接;或者所述陀螺仪传感器和加速度传感器分别倒装在基板的第一表面上,所述第一金属连接结构位于第一外接焊盘的表面,第二金属连接结构位于第二外接焊盘的表面。Optionally, the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure and the second metal connection structure are metal wires, and the two ends of the first metal connection structure are respectively connected to the first external connection The pad is electrically connected to the first interconnecting line, and a middle portion of the first metal connecting structure is suspended on both sides of the gyro sensor, and two ends of the second metal connecting structure are electrically connected to the second external pad and the second interconnecting line, respectively a middle portion of the second metal connection structure is suspended on both sides of the acceleration sensor; or the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure penetrates the back surface and the portion of the gyro sensor a thickness and electrically connected to the first external pad of the front surface of the gyro sensor, the second metal connection structure penetrating through the back surface and the partial thickness of the acceleration sensor, and electrically connected to the second external pad of the front surface of the acceleration sensor; The gyro sensor and the acceleration sensor are respectively flipped on the first surface of the substrate, the first metal connection The surface is located on the surface of the first external pad, and the second metal connection structure is located on the surface of the second external pad.
可选的,还包括:至少密封所述金属线的点胶层。Optionally, the method further includes: sealing at least the dispensing layer of the metal wire.
可选的,所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,所述陀螺仪传感器还包括角速度感应区,陀螺仪传感器正面上具有第一密封盖,第一密封盖密封所述角速度感应区,若干第一外接焊盘位于第一密封盖两侧;所述加速度传感器还包括加速度感应区,加速度传感器正面上具有第二密封盖,第二密封盖密封所述加速度感应区,若干第二外接焊盘位于第二密封盖两侧。Optionally, the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the gyro sensor further includes an angular velocity sensing area. The front surface of the gyro sensor has a first sealing cover, and the first sealing cover is sealed. In the angular velocity sensing area, a plurality of first external pads are located on both sides of the first sealing cover; the acceleration sensor further includes an acceleration sensing area, the second surface of the acceleration sensor has a second sealing cover, and the second sealing cover seals the acceleration sensing area, A plurality of second outer pads are located on both sides of the second sealing cover.
可选的,所述磁感应传感器倒装在基板的第二表面上,所述第三金属连接结构位于第三外接焊盘的表面;或者所述磁感应传感器背面贴合于基板的第二表面,第三金属连接结构为金属线,第三金属连接结构的两端分别与第三外接焊盘和金属线路层电连接,第三金属连接结构的中间部分悬空在磁感应传感器两侧;或者所述磁感应传感器背面贴合于基板的第二表面,所述第三金属连接结构贯穿磁感应传感器的背面和部分厚度,并与磁感应传感器正面的第三外接焊盘电连接。Optionally, the magnetic induction sensor is flipped on the second surface of the substrate, the third metal connection structure is located on the surface of the third external connection pad; or the back surface of the magnetic induction sensor is attached to the second surface of the substrate, The three metal connection structure is a metal wire, and two ends of the third metal connection structure are respectively electrically connected to the third external pad and the metal circuit layer, and a middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor; or the magnetic induction sensor The back surface is adhered to the second surface of the substrate, and the third metal connecting structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor and is electrically connected to the third external pad of the front surface of the magnetic induction sensor.
可选的,还包括数据处理芯片,数据处理芯片与互连线路电连接。Optionally, the data processing chip is further included, and the data processing chip is electrically connected to the interconnection.
可选的,所述互连线路包括位于基板中的第三互连线路和第四互连线路,以及位于基板的第二表面上的若干第一金属线路层和若干第二金属线路层,第三互连线路、第四互连线路、第一金属线路层和第二金属线路层之间相互绝缘;陀螺仪传感器的第一外接焊盘通过第一金属连接结构与第三互连线路电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与第四互连线路电连接;磁感应传感器的第三外接焊盘通过第三金属连接结构与第一金属线路层电连接;数据处理芯片安装在基板的第二表面,数据处理芯片与第三互连线路、第四互连线路、第一金属线路层和第二金属线路层电连接;焊接凸起位于基板的第二表面上的第二金属线路层的表面,且与第二金属线路层电连接。Optionally, the interconnection line includes a third interconnection line and a fourth interconnection line located in the substrate, and a plurality of first metal circuit layers and a plurality of second metal circuit layers on the second surface of the substrate, The three interconnect lines, the fourth interconnect line, the first metal line layer and the second metal line layer are insulated from each other; the first external pad of the gyro sensor is electrically connected to the third interconnect line through the first metal connection structure The second external pad of the acceleration sensor is electrically connected to the fourth interconnection through the second metal connection structure; the third external pad of the magnetic induction sensor is electrically connected to the first metal circuit layer through the third metal connection structure; the data processing chip Mounted on the second surface of the substrate, the data processing chip is electrically connected to the third interconnecting line, the fourth interconnecting line, the first metal wiring layer and the second metal wiring layer; the solder bump is located on the second surface of the substrate The surface of the two metal circuit layers is electrically connected to the second metal circuit layer.
可选的,所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,第一金属连接结构和第二金属连接结构为金属线,第一金属连接结构的两端分别与第一外接焊盘和第三互连线路电连接,第一金属连接结构的中间部分悬空在陀螺仪传感器两侧,第二金属连接结构的两端分别与第二外接焊盘和第四互连线路电连接,第二金属连接结构的中间部分悬空在加速度传感器两侧;或者所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,所述第一金属连接结构贯穿陀螺仪传感器的背面和部分厚度,并与陀螺仪传感器正面的第一外接焊盘电连接,所述第二金属连接结构贯穿加速度传感器的背面与和部分厚度,并与加速度传感器正面的第二外接焊盘电连接;或者所述陀螺仪传感器和加速度传感器分别倒装在基板的第一表面上,所述第一金属连接结构位于第一外接焊盘的表面,第二金属连接结构位于第二外接焊盘的表面。Optionally, the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure and the second metal connection structure are metal wires, and the two ends of the first metal connection structure are respectively connected to the first external connection The pad and the third interconnection are electrically connected, and a middle portion of the first metal connection structure is suspended on both sides of the gyro sensor, and two ends of the second metal connection structure are electrically connected to the second external pad and the fourth interconnection line, respectively a middle portion of the second metal connection structure is suspended on both sides of the acceleration sensor; or the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure penetrates the back surface and the portion of the gyro sensor a thickness and electrically connected to the first external pad of the front surface of the gyro sensor, the second metal connection structure penetrating through the back surface and the partial thickness of the acceleration sensor, and electrically connected to the second external pad of the front surface of the acceleration sensor; The gyro sensor and the acceleration sensor are respectively flipped on the first surface of the substrate, the first metal connection Located on the external surface of the first pad, the second surface of the second metal structure is located external connection pad.
可选的,所述信号处理芯片倒装在基板的第二表面;或者所述信号处理芯片的背面贴合于基板的第二表面,所述信号处理芯片通过金属线与第三互连线路、第四互连线路和第二金属线路层电连接。Optionally, the signal processing chip is flipped on the second surface of the substrate; or the back surface of the signal processing chip is attached to the second surface of the substrate, and the signal processing chip passes through the metal wire and the third interconnection line, The fourth interconnect line and the second metal line layer are electrically connected.
可选的,所述互连线路包括位于基板中的第五互连线路和第六互连线路,以及位于基板的第一表面的若干第三金属线路层和若干第四金属线路层,第五互连线路、第六互连线路、第三金属线路层和第四金属线路层相互绝缘;陀螺仪传感器的第一外接焊盘通过第一金属连接结构与第三金属线路层电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与第四金属线路层电连接;磁感应传感器的第三外接焊盘通过第三金属连接结构与第五互连线路电连接;数据处理芯片安装在基板的第一表面,数据处理芯片与第三金属线路层、第四金属线路层、第五互连线路和第六互连线路电连接;所述互连线路还包括位于基板的第二表面上的若干第五金属线路层,第五金属线路层与第六互连线路电连接,焊接凸起位于第五金属线路层的表面,且与第五金属线路层电连接。Optionally, the interconnection line includes a fifth interconnection line and a sixth interconnection line located in the substrate, and a plurality of third metal circuit layers and a plurality of fourth metal circuit layers located on the first surface of the substrate, and a fifth The interconnection line, the sixth interconnection line, the third metal circuit layer and the fourth metal circuit layer are insulated from each other; the first external pad of the gyro sensor is electrically connected to the third metal circuit layer through the first metal connection structure, the acceleration sensor The second external pad is electrically connected to the fourth metal circuit layer through the second metal connection structure; the third external connection pad of the magnetic induction sensor is electrically connected to the fifth interconnection line through the third metal connection structure; the data processing chip is mounted on the substrate a first surface, the data processing chip is electrically connected to the third metal circuit layer, the fourth metal circuit layer, the fifth interconnection, and the sixth interconnection; the interconnection further includes a second surface on the substrate a plurality of fifth metal circuit layers, the fifth metal circuit layer is electrically connected to the sixth interconnection circuit, the solder bumps are located on the surface of the fifth metal circuit layer, and the fifth metal circuit layer Connection.
可选的,还包括第一数据处理芯片、第二数据处理芯片和第三数据处理芯片,所述第一数据处理芯片与陀螺仪传感器电连接,所述第二数据处 理芯片与加速度传感器电连接,所述第三数据处理芯片与磁感应传感器电连接。Optionally, the method further includes a first data processing chip, a second data processing chip, and a third data processing chip, the first data processing chip is electrically connected to the gyro sensor, and the second data processing chip is electrically connected to the acceleration sensor The third data processing chip is electrically connected to the magnetic induction sensor.
可选的,所述互连线路包括位于基板中的第一互连线路和第二互连线路,以及位于基板的第二表面上的金属线路层;陀螺仪传感器的第一外接焊盘通过第一金属连接结构与第一互连线路电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与第二互连线路电连接;磁感应传感器的第三外接焊盘通过第三金属连接结构与金属线路层电连接;位于基板的第二表面的若干焊接凸起,所述焊接凸起包括第一焊接凸起、第二焊接凸起和第三焊接凸起,第一焊接凸起与第一互连线路电连接,第二焊接凸起与第二互连线路电连接,第三焊接凸起与金属线路层电连接。Optionally, the interconnection line includes a first interconnection line and a second interconnection line in the substrate, and a metal circuit layer on the second surface of the substrate; the first external connection pad of the gyro sensor passes the a metal connection structure is electrically connected to the first interconnection line, and the second external connection pad of the acceleration sensor is electrically connected to the second interconnection line through the second metal connection structure; the third external connection pad of the magnetic induction sensor passes through the third metal connection structure Electrically connecting with the metal circuit layer; a plurality of solder bumps on the second surface of the substrate, the solder bumps including the first solder bumps, the second solder bumps, and the third solder bumps, the first solder bumps and the first solder bumps An interconnecting line is electrically connected, the second soldering bump is electrically connected to the second interconnecting strip, and the third soldering bump is electrically connected to the metal wiring layer.
可选的,陀螺仪传感器的正面具有若干第一内部焊盘和第一外接焊盘,第一数据处理芯片位于陀螺仪传感器的正面上,第一数据处理芯片与第一内部焊盘和第一外接焊盘电连接,加速度传感器的正面具有若干第二内部焊盘和第二外接焊盘,第二数据处理芯片位于加速度传感器的正面,第二数据处理芯片与第二内部焊盘和第二外接焊盘电连接,磁感应传感器的正面具有第三内部焊盘和第三外接焊盘,第三数据处理芯片位于磁感应传感器正面上,第三数据处理芯片与第三内部焊盘和第三外接焊盘电连接。Optionally, the front surface of the gyro sensor has a plurality of first internal pads and a first external pad, the first data processing chip is located on the front surface of the gyro sensor, the first data processing chip and the first internal pad and the first The external pad is electrically connected. The front surface of the acceleration sensor has a plurality of second internal pads and a second external pad. The second data processing chip is located on the front surface of the acceleration sensor, and the second data processing chip is connected to the second internal pad and the second external connection. The pad is electrically connected, the front surface of the magnetic induction sensor has a third inner pad and a third outer pad, the third data processing chip is located on the front surface of the magnetic induction sensor, and the third data processing chip and the third inner pad and the third outer pad Electrical connection.
可选的,所述第一数据处理芯片包括正面和相对的背面,所述第一数据处理芯片的正面具有输入焊盘和输出焊盘,第一数据处理芯片的输入焊盘通过第四金属连接结构与第一内部焊盘电连接,第一数据处理芯片的输出焊盘通过第五金属连接结构与第一外接焊盘电连接,所述第二数据处理芯片包括正面和相对的背面,输入焊盘和输出焊盘位于第二数据处理芯片的正面,第二数据处理芯片的输入焊盘通过第六金属连接结构与第二内部焊盘电连接,第二数据处理芯片的输出焊盘通过第七金属连接结构与第二外接焊盘电连接,所述第三数据处理芯片包括正面和相对的背面,输入焊盘和输出焊盘位于第三数据处理芯片的正面,第三数据处理芯片的输入焊盘通过第八金属连接结构与第三内部焊盘电连接,第三数据处理芯片的输出焊盘通过第九金属连接结构与第三外接焊盘电连接。Optionally, the first data processing chip includes a front surface and an opposite back surface, and the front surface of the first data processing chip has an input pad and an output pad, and the input pad of the first data processing chip is connected through the fourth metal The structure is electrically connected to the first internal pad, the output pad of the first data processing chip is electrically connected to the first external pad through a fifth metal connection structure, the second data processing chip includes a front surface and an opposite back surface, and the input solder The disk and the output pad are located on the front side of the second data processing chip, the input pad of the second data processing chip is electrically connected to the second internal pad through the sixth metal connection structure, and the output pad of the second data processing chip passes the seventh The metal connection structure is electrically connected to the second external processing pad, the third data processing chip includes a front surface and an opposite back surface, the input pad and the output pad are located on the front side of the third data processing chip, and the input processing of the third data processing chip The disk is electrically connected to the third internal pad through the eighth metal connection structure, and the output pad of the third data processing chip passes through the ninth metal connection structure and the External pads are electrically connected.
可选的,所述第一数据处理芯片的背面贴合于陀螺仪传感器的正面,第二数据处理芯片的背面贴合于加速度传感器的正面,第三数据处理芯片的背面贴合于磁感应传感器的正面;或者所述第一数据处理芯片倒装在陀螺仪传感器的正面上,所述第二数据处理芯片倒装在加速度传感器的正面上,所述第三数据处理芯片倒装在磁感应传感器的正面上。Optionally, the back surface of the first data processing chip is attached to the front surface of the gyro sensor, the back surface of the second data processing chip is attached to the front surface of the acceleration sensor, and the back surface of the third data processing chip is attached to the magnetic induction sensor. Front side; or the first data processing chip is flipped on the front side of the gyro sensor, the second data processing chip is flipped on the front side of the acceleration sensor, and the third data processing chip is flipped on the front side of the magnetic induction sensor on.
可选的,所述第一数据处理芯片、第二数据处理芯片和第三数据处理芯片的背面形成凹槽。Optionally, the back sides of the first data processing chip, the second data processing chip, and the third data processing chip form a recess.
可选的,所述陀螺仪传感器为三轴陀螺仪传感器,所述加速度传感器为三轴加速度传感器,所述磁感应传感器为三轴磁感应传感器。Optionally, the gyro sensor is a three-axis gyro sensor, the acceleration sensor is a three-axis acceleration sensor, and the magnetic induction sensor is a three-axis magnetic induction sensor.
与现有技术相比,本发明技术方案具有以下优点:Compared with the prior art, the technical solution of the present invention has the following advantages:
本发明的封装方法和封装结构,使得陀螺仪传感器、加速度传感器、磁感应触感器集成在一个MEMS封装结构中,减小了MEMS封装结构的体积,提高了集成度。并且,由于磁感应触感器对磁性材料比较敏感,本发明中磁感应触感器相对于陀螺仪传感器和加速度传感器安装在基板的不同表面,使得磁感应触感器不会受到陀螺仪传感器、加速度传感器的干扰,提高MEMS封装结构的检测精度。The packaging method and the package structure of the invention make the gyro sensor, the acceleration sensor and the magnetic induction touch sensor integrated in one MEMS package structure, which reduces the volume of the MEMS package structure and improves the integration degree. Moreover, since the magnetic induction touch sensor is sensitive to magnetic materials, the magnetic induction touch sensor is mounted on different surfaces of the substrate relative to the gyro sensor and the acceleration sensor, so that the magnetic induction touch sensor is not interfered by the gyro sensor and the acceleration sensor, thereby improving Detection accuracy of MEMS package structure.
进一步,在基板的第二表面形成金属线路层,磁感应传感器倒装在基板的第二表面并通过第三金属连接结构与金属线路层电连接这样的连接方式,使得磁感应传感器的背面到基板的第二表面的厚度较小,后续在基板的第二表面形成焊接凸起时,焊接凸起的高度可以较小,有利于减少焊接凸起形成的工艺难度以及减少整个封装结构的体积。Further, a metal circuit layer is formed on the second surface of the substrate, and the magnetic induction sensor is flipped on the second surface of the substrate and electrically connected to the metal circuit layer through the third metal connection structure, so that the back side of the magnetic induction sensor is on the substrate The thickness of the two surfaces is small, and when the solder bumps are formed on the second surface of the substrate, the height of the solder bumps can be small, which is advantageous for reducing the process difficulty of solder bump formation and reducing the volume of the entire package structure.
进一步,第一金属连接结构或贯穿陀螺仪传感器的背面和部分厚度,并与陀螺仪传感器正面的第一外接焊盘电连接,第二金属连接结构或贯穿加速度传感器的背面和部分厚度,并与加速度传感器正面的第二外接焊盘电连接,当陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,使得第一金属连接结构与第一互连线路电连接,使得第二金属连接结构与第二互连线路电连接的连接方式,使得陀螺仪传感器和加速度传感器与基板 的第一表面之间的厚度较小,有利于减小封装结构的体积。Further, the first metal connection structure or the back surface and part of the thickness of the gyro sensor are electrically connected to the first external pad of the front surface of the gyro sensor, and the second metal connection structure or the back surface and part of the thickness of the acceleration sensor are The second external pad of the front surface of the acceleration sensor is electrically connected, and the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, so that the first metal connection structure is electrically connected to the first interconnection line, so that the second metal connection structure The connection manner electrically connected to the second interconnection line makes the thickness between the gyro sensor and the acceleration sensor and the first surface of the substrate small, which is advantageous for reducing the volume of the package structure.
进一步,第一金属连接结构形成在陀螺仪传感器的第一外接焊盘表面,第二金属连接结构形成在加速度传感器的第一外接焊盘表面,因而所述陀螺仪传感器和加速度传感器可以分别倒装在基板的第一表面上分别与第一互连线路和第二互连线路连接,减小工艺难度,并有利于减小封装结构的体积。Further, the first metal connection structure is formed on the surface of the first external pad of the gyro sensor, and the second metal connection structure is formed on the surface of the first external pad of the acceleration sensor, so that the gyro sensor and the acceleration sensor can be flipped separately Connecting to the first interconnecting line and the second interconnecting line on the first surface of the substrate respectively reduces the process difficulty and facilitates reducing the volume of the package structure.
进一步,第三金属连接结构或贯穿磁感应传感器的背面和部分厚度,并与磁感应传感器正面的第三外接焊盘电连接,所述磁感应传感器背面贴合于基板的第二表面,在减小磁感应传感器的表面到第一基板第二表面厚度的同时,使得磁感应传感器的磁感应区能远离基板的第一表面上的陀螺仪传感器和加速度触感器,在减小封装结构的体积的同时,提高磁感应传感器的检测精度。Further, the third metal connection structure or the back surface and the partial thickness of the magnetic induction sensor are electrically connected to the third external pad of the front surface of the magnetic induction sensor, and the back surface of the magnetic induction sensor is attached to the second surface of the substrate, and the magnetic induction sensor is reduced. Simultaneously with the thickness of the second surface of the first substrate, the magnetic sensing region of the magnetic induction sensor can be moved away from the gyro sensor and the acceleration touch sensor on the first surface of the substrate, and the magnetic induction sensor is improved while reducing the volume of the package structure. Detection accuracy.
本发明的实现封装结构和封装方法实现了一个数据处理芯片与陀螺仪传感器、加速度传感器和磁感应传感器的集成封装,减小了封装结构的体积,并且所述数据处理芯片能对陀螺仪传感器、加速度传感器和磁感应传感器感应的信号进行处理,并将处理后的信号从焊接凸起传输。The package structure and the packaging method of the present invention realize an integrated package of a data processing chip and a gyro sensor, an acceleration sensor and a magnetic induction sensor, which reduces the volume of the package structure, and the data processing chip can measure the gyro sensor and the acceleration The signals sensed by the sensor and the magnetic induction sensor are processed and the processed signal is transmitted from the solder bump.
本发明的封装结构和封装方法,数据处理芯片与陀螺仪传感器和加速度传感器均封装与基板的第一表面上,而磁感应传感器封装在基板的第二表面上,在实现一个数据处理芯片与陀螺仪传感器、加速度传感器和磁感应传感器的集成封装,减小了封装结构的体积,并且所述数据处理芯片能对陀螺仪传感器、加速度传感器和磁感应传感器感应的信号进行处理,并将处理后的信号从焊接凸起传输,同时由于数据处理芯片与陀螺仪传感器和加速度传感器均封装与基板的第一表面上,而磁感应传感器封装在基板的第二表面上,更利于基板的第二表面上形成的焊接凸起的布局。In the package structure and packaging method of the present invention, the data processing chip and the gyro sensor and the acceleration sensor are both packaged on the first surface of the substrate, and the magnetic induction sensor is packaged on the second surface of the substrate to implement a data processing chip and the gyroscope The integrated package of the sensor, the acceleration sensor and the magnetic induction sensor reduces the volume of the package structure, and the data processing chip can process signals induced by the gyro sensor, the acceleration sensor and the magnetic induction sensor, and the processed signal is soldered The bump is transmitted, and at the same time, since the data processing chip and the gyro sensor and the acceleration sensor are both packaged on the first surface of the substrate, and the magnetic induction sensor is packaged on the second surface of the substrate, the solder bump formed on the second surface of the substrate is more favorable. The layout.
本发明封装结构和封装方法,实现陀螺仪传感器模块、加速度传感器模块、和磁感应传感器模块的集成封装,减小了封装结构的体积,并且第一数据处理芯片,第二数据处理芯片和第三数据处理芯片可以单独对对应的陀螺仪传感器、加速度传感器、和磁感应传感器感应的信号进行处理, 提高了处理的效率,并将处理后的信号通过第一焊接凸起、第二焊接凸起和第三焊接凸起输出。The package structure and the packaging method of the invention realize integrated packaging of the gyro sensor module, the acceleration sensor module, and the magnetic induction sensor module, reduce the volume of the package structure, and the first data processing chip, the second data processing chip and the third data The processing chip can separately process the signals sensed by the corresponding gyro sensor, the acceleration sensor, and the magnetic induction sensor, thereby improving the processing efficiency, and passing the processed signal through the first solder bump, the second solder bump, and the third Welding bump output.
附图说明DRAWINGS
图1-图8为本发明第一实施例MEMS传感器封装结构形成过程的结构示意图;其中,图1为一种基板的示意图;图2为一种陀螺仪传感器的示意图;图3为一种加速度传感器的示意图;图4为一种磁感应传感器的示意图;图5为陀螺仪传感器和加速度传感器安装到基板的示意图;图6为在图5中基板第二表面设有金属线路层的示意图;图7为在图6中安装磁感应传感器的示意图;图8为图7中设置焊接凸起的示意图;FIG. 1 is a schematic structural view showing a process of forming a MEMS sensor package structure according to a first embodiment of the present invention; FIG. 1 is a schematic view of a substrate; FIG. 2 is a schematic diagram of a gyro sensor; FIG. 4 is a schematic view of a magnetic induction sensor; FIG. 5 is a schematic view showing the mounting of the gyro sensor and the acceleration sensor to the substrate; FIG. 6 is a schematic view showing the metal circuit layer on the second surface of the substrate in FIG. 5; FIG. 8 is a schematic view showing the arrangement of the solder bumps in FIG. 7; FIG.
图9-图14为本发明第二实施例MEMS传感器封装结构形成过程的结构示意图;其中,图9为一种陀螺仪传感器的示意图;图10为一种加速度传感器的示意图;图11为另一种陀螺仪传感器的示意图;图12为另一种加速度传感器的示意图;图13为图9、10中陀螺仪传感器、加速度传感器安装到基板的示意图;图14为图11、12中陀螺仪传感器、加速度传感器安装到基板的示意图;9 to FIG. 14 are schematic structural views showing a process of forming a MEMS sensor package structure according to a second embodiment of the present invention; wherein FIG. 9 is a schematic diagram of a gyro sensor; FIG. 10 is a schematic diagram of an acceleration sensor; FIG. 12 is a schematic diagram of another type of gyro sensor; FIG. 13 is a schematic diagram of the gyro sensor and the acceleration sensor mounted on the substrate in FIGS. 9 and 10; FIG. 14 is a gyro sensor in FIGS. a schematic diagram of the acceleration sensor mounted to the substrate;
图15-图17为本发明第三实施例MEMS传感器封装结构形成过程的结构示意图;其中,图15为一种陀螺仪传感器的示意图;图16为一种加速度传感器的示意图;图17为图15、16中陀螺仪传感器、加速度传感器安装到基板的示意图;15 to FIG. 17 are schematic structural views showing a process of forming a MEMS sensor package structure according to a third embodiment of the present invention; wherein FIG. 15 is a schematic diagram of a gyro sensor; FIG. 16 is a schematic diagram of an acceleration sensor; And 16 schematic diagrams of the gyro sensor and the acceleration sensor mounted on the substrate;
图18-图21为本发明第四实施例MEMS传感器封装结构形成过程的结构示意图;图18为一种磁感应传感器的示意图;图19为另一种磁感应传感器的示意图;图20为图18中磁感应传感器安装到基板的示意图;图21为图19中磁感应传感器安装到基板的示意图;18 to FIG. 21 are schematic diagrams showing the structure of a MEMS sensor package structure according to a fourth embodiment of the present invention; FIG. 18 is a schematic diagram of a magnetic induction sensor; FIG. 19 is a schematic diagram of another magnetic induction sensor; FIG. 21 is a schematic view showing the mounting of the magnetic induction sensor to the substrate in FIG. 19; FIG.
图22-图23为本发明第五实施例MEMS传感器封装结构形成过程的结构示意图;其中,图22、23中的基板还安装有数据处理芯片;22 to FIG. 23 are schematic structural diagrams showing a process of forming a MEMS sensor package structure according to a fifth embodiment of the present invention; wherein, the substrate in FIGS. 22 and 23 is further provided with a data processing chip;
图24-图25为本发明第六实施例MEMS传感器封装结构形成过程的结 构示意图;其中,图24、25的基板还安装有数据处理芯片,且与陀螺仪传感器、加速度传感器均位于基板的第一表面;24 to FIG. 25 are schematic structural diagrams showing a process of forming a MEMS sensor package structure according to a sixth embodiment of the present invention; wherein, the substrate of FIGS. 24 and 25 is further provided with a data processing chip, and the gyro sensor and the acceleration sensor are both located on the substrate. a surface
图26-图37为本发明第七实施例MEMS传感器封装结构形成过程的结构示意图;其中,图26为第一种陀螺仪传感器模块的示意图;图27为第一种加速度传感器模块的示意图;图28为第一种磁感应传感器模块的示意图;图29为第二种陀螺仪传感器模块的示意图;图30为第二种加速度传感器模块的示意图;图31为第二种磁感应传感器模块的示意图;图32为第三种陀螺仪传感器模块的示意图;图33为第三种加速度传感器模块的示意图;图34为第三种磁感应传感器模块的示意图;图35-37分别为三种陀螺仪传感器、加速度传感器、磁感应传感器模块安装于基板的示意图。26 to 37 are structural diagrams showing a process of forming a MEMS sensor package structure according to a seventh embodiment of the present invention; wherein, FIG. 26 is a schematic diagram of a first type of gyro sensor module; FIG. 27 is a schematic diagram of a first type of acceleration sensor module; 28 is a schematic diagram of a first type of magnetic induction sensor module; FIG. 29 is a schematic diagram of a second type of gyro sensor module; FIG. 30 is a schematic diagram of a second type of acceleration sensor module; and FIG. 31 is a schematic diagram of a second type of magnetic induction sensor module; A schematic diagram of a third type of gyro sensor module; FIG. 33 is a schematic diagram of a third type of acceleration sensor module; FIG. 34 is a schematic diagram of a third type of magnetic induction sensor module; and FIGS. 35-37 are three kinds of gyro sensors, acceleration sensors, A schematic diagram of a magnetic induction sensor module mounted on a substrate.
具体实施方式detailed description
如背景技术所言,现在的MEMS加速度传感器、MEMS陀螺仪传感器和MEMS磁感应传感器均是分开设计制作,然后独立进行封装的,由于各种传感器分别设计制作并独立进行封装,这使得现有的MEMS器件体积较大、成本较高。As the background art states, the current MEMS accelerometers, MEMS gyroscope sensors, and MEMS magnetic inductive sensors are separately designed and then packaged separately. Since various sensors are separately designed and packaged independently, the existing MEMS are made. The device is bulky and costly.
为此本发明提供了一种MEMS传感器封装结构极其形成方法,实现了加速度传感器、陀螺仪传感器和磁感应传感器的集成封装,减小了封装结构的体积。To this end, the present invention provides a method for extremely forming a MEMS sensor package structure, which realizes an integrated package of an acceleration sensor, a gyro sensor and a magnetic induction sensor, and reduces the volume of the package structure.
为使本发明的上述目的、特征和优点能够更加明显易懂,下面结合附图对本发明的具体实施方式做详细的说明。在详述本发明实施例时,为便于说明,示意图会不依一般比例作局部放大,而且所述示意图只是示例,其在此不应限制本发明的保护范围。此外,在实际制作中应包含长度、宽度及深度的三维空间尺寸。The above described objects, features and advantages of the present invention will become more apparent from the aspects of the appended claims. In the detailed description of the embodiments of the present invention, for the convenience of the description, the schematic diagram will not be partially enlarged, and the schematic diagram is only an example, and the scope of protection of the present invention should not be limited herein. In addition, the actual three-dimensional dimensions of length, width and depth should be included in the actual production.
第一实施例First embodiment
图1-图8为本发明第一实施例MEMS传感器封装结构形成过程的结构示意图。FIG. 1 is a schematic structural view showing a process of forming a MEMS sensor package structure according to a first embodiment of the present invention.
参考图1,提供基板100,所述基板100包括第一表面101和相对的第二表面102,所述基板100具有互连线路。Referring to FIG. 1, a substrate 100 is provided that includes a first surface 101 and an opposite second surface 102, the substrate 100 having interconnecting lines.
本实施例中,所述互连线路包括位于基板100中的第一互连线路103和第二互连线路104。In this embodiment, the interconnect line includes a first interconnect line 103 and a second interconnect line 104 located in the substrate 100.
所述第一互连线路103和第二互连线路104用于将基板100的第一表面101的电连接点引至基板100的第二表面102。The first interconnect line 103 and the second interconnect line 104 are used to direct electrical connection points of the first surface 101 of the substrate 100 to the second surface 102 of the substrate 100.
本实施例中,第一互连线路103后续实现基板100的第一表面101上安装的陀螺仪传感器与基板100的第二表面102上形成的焊接凸起电连接,第二互连线路104后续实现基板100的第一表面101上安装的与加速度传感器基板100的第二表面102上形成的焊接凸起电连接的电连接。In this embodiment, the first interconnection line 103 subsequently realizes that the gyro sensor mounted on the first surface 101 of the substrate 100 is electrically connected to the solder bump formed on the second surface 102 of the substrate 100, and the second interconnection line 104 is subsequently followed. An electrical connection electrically connected to the solder bumps formed on the second surface 102 of the acceleration sensor substrate 100 mounted on the first surface 101 of the substrate 100 is achieved.
所述基板100可以为印刷线路板、BT(Bismaleimide Triazine)树脂基板或半导体基板中的一种。所述基板100为半导体基板时,半导体基板可以为硅基板、锗基板、硅锗基板或其他合适的半导体材料基板。The substrate 100 may be one of a printed wiring board, a BT (Bismaleimide Triazine) resin substrate, or a semiconductor substrate. When the substrate 100 is a semiconductor substrate, the semiconductor substrate may be a silicon substrate, a germanium substrate, a silicon germanium substrate, or other suitable semiconductor material substrate.
在一实施例中,所述基板100为印刷线路板、BT(Bismaleimide Triazine)树脂基板时,所述基板可以为单层或多层堆叠结构,相应的所述第一互连线路103和第二互连线路104也可以为单层或多层堆叠结构。所述第一互连线路103和第二互连线路104为多层堆叠结构时,所述第一互连线路103和第二互连线路104可以包括多层金属线路层和将相邻层的金属线路层互连的金属插塞或过孔连接结构。In an embodiment, when the substrate 100 is a printed wiring board or a BT (Bismaleimide Triazine) resin substrate, the substrate may be a single layer or a multi-layer stacked structure, and the first interconnecting lines 103 and second are corresponding. Interconnect lines 104 can also be a single layer or multi-layer stack structure. When the first interconnection line 103 and the second interconnection line 104 are a multi-layer stacked structure, the first interconnection line 103 and the second interconnection line 104 may include a plurality of metal wiring layers and adjacent layers. Metal plug or via connection structure interconnected by metal circuit layers.
在另一实施例中,所述基板100为半导体基板时,所述第一互连线路103和第二互连线路104可以包括贯穿半导体基板的通孔互连结构以及位于半导体基板的第一表面和/或第二表面上的与通孔互连结构电连接的再布线金属线路层。In another embodiment, when the substrate 100 is a semiconductor substrate, the first interconnect line 103 and the second interconnect line 104 may include a via interconnect structure penetrating the semiconductor substrate and a first surface of the semiconductor substrate And/or a rewiring metal wiring layer electrically connected to the via interconnect structure on the second surface.
所述第一互连线路103和第二互连线路104的数量为多个(≥2个),不同的第一互连线路103和/或第二互连线路104之间是相互隔离的,且相互绝缘的。本实施例中,所述第一互连线路103的数量与后续安装的陀螺仪传感器上的第一外接焊盘的数量一致,所述第二互连线路104数量与后 续安装的加速度传感器的第二外接焊盘的数量一致。The number of the first interconnecting lines 103 and the second interconnecting lines 104 is plural (≥2), and the different first interconnecting lines 103 and/or the second interconnecting lines 104 are isolated from each other. And insulated from each other. In this embodiment, the number of the first interconnection lines 103 is the same as the number of the first external connection pads on the subsequently mounted gyro sensor, and the number of the second interconnection lines 104 is the same as that of the subsequently installed acceleration sensor. The number of the two external pads is the same.
参考图2、图3和图4,提供陀螺仪传感器21、加速度传感器31和磁感应传感器41,所述陀螺仪传感器21包括若干第一外接焊盘202,所述加速度传感器31包括若干第二外接焊盘302,所述磁感应传感器41包括若干第三外接焊盘402。Referring to FIGS. 2, 3, and 4, a gyro sensor 21, an acceleration sensor 31, and a magnetic induction sensor 41 are provided. The gyro sensor 21 includes a plurality of first external pads 202, and the acceleration sensor 31 includes a plurality of second external solders. The disk 302, the magnetic induction sensor 41 includes a plurality of third external pads 402.
所述陀螺仪传感器21用于检测物体(比如手机或汽车)的角速度,即陀螺仪传感器21可以感应物体的加速度,从而产生电信号。The gyro sensor 21 is used to detect the angular velocity of an object such as a mobile phone or a car, that is, the gyro sensor 21 can sense the acceleration of the object to generate an electrical signal.
在一实施例中,所述陀螺仪传感器21包括角速度感应区201和位于角速度感应区201周围的第一外接焊盘202,所述角速度感应区201用于感应物体的加速度,产生电信号,所述第一外接焊盘202作为陀螺仪传感器21与外部的芯片或电路进行电信号传递的电连接点。所述陀螺仪传感器21中还形成有关联电路(图中未示出),关联电路将角速度感应区201与第一外接焊盘202电连接,角速度感应区201感应产生的电信号可以通过关联电路传输到第一外接焊盘202。在一实施例中,所述陀螺仪传感器21正面上具有第一密封盖210,第一密封盖210密封所述角速度感应区201,若干第一外接焊盘202位于第一密封盖210两侧,所述第一密封盖210将角速度感应区201密封,在后续的封装过程中防止角速度感应区201的损伤或者在使用时防潮防腐蚀,且若干第一外接焊盘202位于第一密封盖210两侧,第一密封盖210的存在不会影响后续的封装过程。第一密封盖210的材料可以为硅,玻璃或陶瓷,可以通过粘合层粘合或者键合工艺形成在陀螺仪传感器21正面上。In one embodiment, the gyro sensor 21 includes an angular velocity sensing region 201 and a first external pad 202 located around the angular velocity sensing region 201. The angular velocity sensing region 201 is configured to sense an acceleration of an object to generate an electrical signal. The first external pad 202 serves as an electrical connection point for electrical signal transmission between the gyro sensor 21 and an external chip or circuit. An associated circuit (not shown) is further formed in the gyro sensor 21, and the associated circuit electrically connects the angular velocity sensing area 201 with the first external pad 202, and the electrical signal induced by the angular velocity sensing area 201 can pass through the associated circuit. Transfer to the first external pad 202. In an embodiment, the gyro sensor 21 has a first sealing cover 210 on the front surface thereof, the first sealing cover 210 seals the angular velocity sensing area 201, and a plurality of first external bonding pads 202 are located on opposite sides of the first sealing cover 210. The first sealing cover 210 seals the angular velocity sensing area 201, prevents damage of the angular velocity sensing area 201 during the subsequent packaging process, or prevents moisture and corrosion during use, and the plurality of first external pads 202 are located on the first sealing cover 210. On the side, the presence of the first sealing cover 210 does not affect the subsequent packaging process. The material of the first sealing cover 210 may be silicon, glass or ceramic, and may be formed on the front surface of the gyro sensor 21 by an adhesive layer bonding or bonding process.
所述第一外接焊盘202的数量为多个(大于等于2个),部分第一外接焊盘可以传输感应的电信号,部分第一外接焊盘可以接受外部的控制信号或者电源信号。The number of the first external pads 202 is plural (two or more), and some of the first external pads can transmit induced electrical signals, and some of the first external pads can receive external control signals or power signals.
所述陀螺仪传感器21包括正面和相对的背面,所述第一外接焊盘21和角速度感应区201位于陀螺仪传感器21的正面。The gyro sensor 21 includes a front surface and an opposite back surface, and the first outer pad 21 and the angular velocity sensing region 201 are located on the front surface of the gyro sensor 21.
所述加速度传感器31用于检测物体(比如手机或汽车)的加速度,即 加速度传感器31可以感应物体的加速度,从而产生电信号。The acceleration sensor 31 is for detecting the acceleration of an object such as a mobile phone or a car, i.e., the acceleration sensor 31 can sense the acceleration of the object to generate an electrical signal.
在一实施例中,所述加速度传感器31包括加速度感应区301和位于加速度感应区301周围的第二外接焊盘302,所述加速度感应区301用于感应物体的加速度,产生电信号,所述第二外接焊盘302作为加速度传感器31与外部的芯片或电路进行电信号传递的电连接点。所述加速度传感器31中还形成有关联电路(图中未示出),关联电路将加速度感应区301与第二外接焊盘302电连接,加速度感应区301感应产生的电信号可以通过关联电路传输到第二外接焊盘302。在一实施例中,所述加速度传感器301正面上具有第二密封盖310,第二密封盖310密封所述加速度感应区301,若干第二外接焊盘302位于第二密封盖310两侧,第二密封盖310密封所述加速度感应区301,在后续的封装过程中防止加速度感应区301的损伤或者在使用时防潮防腐蚀,且若干第二外接焊盘302位于第二密封盖310两侧,第二密封盖310的存在不会影响后续的封装过程。第二密封盖310的材料可以为硅,玻璃或陶瓷,可以通过粘合层粘合或者键合工艺形成在加速度传感器301正面上。In an embodiment, the acceleration sensor 31 includes an acceleration sensing area 301 and a second external bonding pad 302 located around the acceleration sensing area 301. The acceleration sensing area 301 is configured to sense an acceleration of an object to generate an electrical signal. The second external pad 302 serves as an electrical connection point for the electrical signal transmission of the acceleration sensor 31 and an external chip or circuit. An associated circuit (not shown) is further formed in the acceleration sensor 31. The associated circuit electrically connects the acceleration sensing area 301 and the second external pad 302. The electrical signal induced by the acceleration sensing area 301 can be transmitted through the associated circuit. To the second external pad 302. In an embodiment, the acceleration sensor 301 has a second sealing cover 310 on the front surface thereof, and the second sealing cover 310 seals the acceleration sensing area 301, and the plurality of second external bonding pads 302 are located on both sides of the second sealing cover 310. The second sealing cover 310 seals the acceleration sensing area 301 to prevent damage of the acceleration sensing area 301 or moisture and corrosion during use in the subsequent packaging process, and the plurality of second external pads 302 are located on both sides of the second sealing cover 310. The presence of the second sealing cover 310 does not affect the subsequent packaging process. The material of the second sealing cover 310 may be silicon, glass or ceramic, and may be formed on the front surface of the acceleration sensor 301 by an adhesive layer bonding or bonding process.
所述加速度传感器31和所述陀螺仪传感器21均包括正面和相对的背面,具体在该实施例中,所述第二外接焊盘302和加速度感应区301位于加速度传感器31的正面,所述第一外接焊盘202和角速度感应区201位于陀螺仪传感器21的正面。The acceleration sensor 31 and the gyro sensor 21 each include a front surface and an opposite back surface. Specifically, in this embodiment, the second outer contact pad 302 and the acceleration sensing region 301 are located on the front surface of the acceleration sensor 31. An external pad 202 and an angular velocity sensing area 201 are located on the front side of the gyro sensor 21.
所述磁感应传感器41用于检测物体(比如手机或汽车)的磁场,即磁感应传感器41可以感应物体的加速度,从而产生电信号。The magnetic induction sensor 41 is used to detect the magnetic field of an object such as a mobile phone or a car, that is, the magnetic induction sensor 41 can sense the acceleration of the object to generate an electrical signal.
在一实施例中,所述磁感应传感器41包括磁场感应区401和位于磁场感应区401周围的第三外接焊盘402,所述磁场感应区401用于感应物体的加速度,产生电信号,所述第三外接焊盘402作为磁感应传感器41与外部的芯片或电路进行电信号传递的电连接点。所述磁感应传感器41中还形成有关联电路(图中未示出),关联电路将磁场感应区401与第三外接焊盘402电连接,磁场感应区401感应产生的电信号可以通过关联电路传输到第三外接焊盘402。In one embodiment, the magnetic induction sensor 41 includes a magnetic field sensing region 401 and a third external bonding pad 402 located around the magnetic field sensing region 401. The magnetic field sensing region 401 is configured to sense an acceleration of an object to generate an electrical signal. The third external pad 402 serves as an electrical connection point for the electrical signal transmission between the magnetic induction sensor 41 and an external chip or circuit. An associated circuit (not shown) is further formed in the magnetic induction sensor 41. The associated circuit electrically connects the magnetic field sensing area 401 and the third external bonding pad 402, and the electrical signal induced by the magnetic field sensing area 401 can be transmitted through the associated circuit. Go to the third external pad 402.
所述第三外接焊盘402的数量为多个(大于等于2个),部分第三外接焊盘可以传输感应的电信号,部分第三外接焊盘可以接受外部的控制信号或者电源信号。The number of the third external pads 402 is plural (two or more), some of the third external pads can transmit induced electrical signals, and some of the third external pads can receive external control signals or power signals.
所述磁感应传感器41包括正面和相对的背面,所述第三外接焊盘41和磁场感应区401位于磁感应传感器41的正面。The magnetic induction sensor 41 includes a front surface and an opposite back surface, and the third external contact pad 41 and the magnetic field sensing region 401 are located on the front surface of the magnetic induction sensor 41.
所述陀螺仪传感器21可以为单轴或多轴(≥2轴)陀螺仪传感器,在一实施例中,陀螺仪传感器21为三轴陀螺仪传感器时,三轴陀螺仪传感器可以用于感应三个方向的角速度,所述三个方向指第一方向、第二方向和第三方向,第一方向垂直第二方向,第三方向垂直于第一方向和第二方向所在的平面。The gyro sensor 21 can be a single-axis or multi-axis (≥ 2 axis) gyro sensor. In one embodiment, when the gyro sensor 21 is a three-axis gyro sensor, the three-axis gyro sensor can be used to sense three. The angular velocity of the directions, the three directions refer to a first direction, a second direction, and a third direction, the first direction being perpendicular to the second direction, and the third direction being perpendicular to a plane in which the first direction and the second direction are located.
所述加速度传感器31可以为单轴或多轴(≥2轴)加速度传感器,在一实施例中,加速度传感器31为三轴加速度传感器时,三轴加速度传感器可以用于感应三个方向的加速度,所述三个方向指第一方向、第二方向和第三方向,第一方向垂直第二方向,第三方向垂直于第一方向和第二方向所在的平面。The acceleration sensor 31 may be a single-axis or multi-axis (≥ 2 axis) acceleration sensor. In an embodiment, when the acceleration sensor 31 is a three-axis acceleration sensor, the three-axis acceleration sensor may be used to sense acceleration in three directions. The three directions refer to a first direction, a second direction, and a third direction, the first direction being perpendicular to the second direction, and the third direction being perpendicular to a plane in which the first direction and the second direction are located.
所述磁感应传感器41可以为单轴或多轴(≥2轴)加速度传感器,在一实施例中,磁感应传感器41为三轴磁感应传感器时,三轴磁感应传感器可以用于感应三个方向的磁场,所述三个方向指第一方向、第二方向和第三方向,第一方向垂直第二方向,第三方向垂直于一方向和第二方向所在的平面。The magnetic induction sensor 41 can be a single-axis or multi-axis (≥ 2 axis) acceleration sensor. In one embodiment, when the magnetic induction sensor 41 is a three-axis magnetic induction sensor, the three-axis magnetic induction sensor can be used to sense magnetic fields in three directions. The three directions refer to a first direction, a second direction, and a third direction, the first direction being perpendicular to the second direction, and the third direction being perpendicular to a plane in which the one direction and the second direction are located.
参考图5,将陀螺仪传感器21和加速度传感器31分别安装在基板100的第一表面101,陀螺仪传感器21的第一外接焊盘202通过第一金属连接结构109与第一互连线路103电连接,加速度传感器31的第二外接焊盘302通过第二金属连接结构108与第二互连线路104电连接。Referring to FIG. 5, the gyro sensor 21 and the acceleration sensor 31 are respectively mounted on the first surface 101 of the substrate 100, and the first external pad 202 of the gyro sensor 21 is electrically connected to the first interconnection 103 through the first metal connection structure 109. Connected, the second external pad 302 of the acceleration sensor 31 is electrically coupled to the second interconnect 104 via the second metal connection 108.
陀螺仪传感器21和加速度传感器31的背面贴合于基板100的第一表面,本实施例中,陀螺仪传感器21和加速度传感器31的背面通过粘合层105、106贴合于基板100的第一表面。所述粘合层308的材料为环氧树脂 胶、聚酰亚胺胶、苯并环丁烯胶或聚苯并恶唑胶。The back surfaces of the gyro sensor 21 and the acceleration sensor 31 are attached to the first surface of the substrate 100. In the embodiment, the back surfaces of the gyro sensor 21 and the acceleration sensor 31 are bonded to the first substrate 100 through the adhesive layers 105 and 106. surface. The material of the adhesive layer 308 is epoxy resin glue, polyimide glue, benzocyclobutene glue or polybenzoxazole glue.
所述通过粘合层105、106形成过程可以为:通过贴膜工艺、印胶工艺或滚胶工艺在基板100的第一表面101上形成粘合材料层,通过曝光和显影工艺对粘合材料层进行图形化,在基板上形成粘合层105、106,粘合层105、106的大小和位置与陀螺仪传感器21和加速度传感器31的背面的大小以及陀螺仪传感器21和加速度传感器31贴合在基板300的第一表面31上的位置对应。The forming process by the adhesive layers 105, 106 may be: forming a layer of adhesive material on the first surface 101 of the substrate 100 by a filming process, a printing process, or a roll-on process, and bonding the layer of adhesive material through exposure and development processes. Graphically, adhesive layers 105, 106 are formed on the substrate, and the size and position of the adhesive layers 105, 106 are attached to the size of the back surface of the gyro sensor 21 and the acceleration sensor 31, and the gyro sensor 21 and the acceleration sensor 31 are attached. The positions on the first surface 31 of the substrate 300 correspond.
本实施例中,第一金属连接结构109和第二金属连接结构108为金属线,第一金属连接结构109的两端分别与第一外接焊盘202和第一互连线路103电连接,第一金属连接结构109的中间部分悬空在陀螺仪传感器21两侧,第二金属连接结构108的两端分别与第二外接焊盘302和第二互连线路104电连接,第二金属连接结构108的中间部分悬空在加速度传感器31两侧。In this embodiment, the first metal connection structure 109 and the second metal connection structure 108 are metal wires, and two ends of the first metal connection structure 109 are electrically connected to the first outer pad 202 and the first interconnection line 103, respectively. A middle portion of a metal connection structure 109 is suspended on both sides of the gyro sensor 21, and two ends of the second metal connection structure 108 are electrically connected to the second outer contact pad 302 and the second interconnection line 104, respectively, and the second metal connection structure 108 The middle portion is suspended on both sides of the acceleration sensor 31.
所述第一金属连接结构109和第二金属连接结构108可以通过引线键合工艺形成。The first metal connection structure 109 and the second metal connection structure 108 may be formed by a wire bonding process.
本实施中,陀螺仪传感器21和加速度传感器31的背面通过粘合层105、106贴合于基板100的第一表面,并且通过引线键合工艺第一金属连接结构109和第二金属连接结构108的这样的连接方式或工艺过程可以防止其他工艺步骤(比如热处理工艺)对陀螺仪传感器21和加速度传感器31的损伤。In the present embodiment, the back surfaces of the gyro sensor 21 and the acceleration sensor 31 are attached to the first surface of the substrate 100 through the adhesive layers 105, 106, and the first metal connection structure 109 and the second metal connection structure 108 are connected by a wire bonding process. Such a connection or process can prevent damage to the gyro sensor 21 and the acceleration sensor 31 by other process steps such as a heat treatment process.
在一实施例中,在形成第一金属连接结构109和第二金属连接结构108后,形成至少密封所述第一金属连接结构109和第二金属连接结构108(金属线)的点胶层。所述点胶层可以包括覆盖第一金属连接结构109的第一点胶层和覆盖第二金属连接结构108的第二点胶层,第一点胶层和第二点胶层分别形成。所述点胶层还可以为一体结构,同时覆盖第一金属连接结构109和第二金属连接结构108。所述点胶层除了覆盖第一金属连接结构109和第二金属连接结构108,还可以覆盖基板100的第一表面101以及陀螺仪传感器21和加速度传感器31,且点胶层具有平坦的表面,使得点胶 层可以作为平台,便于后续在便于后续在基板100的第二表面进行安装磁感应传感器41和形成焊接凸起等工艺步骤。在一实施例中,点胶层的材料为树脂(胶),形成工艺为点胶工艺、注塑工艺或转塑工艺。In an embodiment, after forming the first metal connection structure 109 and the second metal connection structure 108, a glue layer that seals at least the first metal connection structure 109 and the second metal connection structure 108 (metal lines) is formed. The dispensing layer may include a first dispensing layer covering the first metal connecting structure 109 and a second dispensing layer covering the second metal connecting structure 108, and the first dispensing layer and the second dispensing layer are respectively formed. The dispensing layer may also be a unitary structure covering both the first metal connection structure 109 and the second metal connection structure 108. The dispensing layer may cover the first surface 101 of the substrate 100 and the gyro sensor 21 and the acceleration sensor 31 in addition to the first metal connection structure 109 and the second metal connection structure 108, and the dispensing layer has a flat surface. The dispensing layer can be used as a platform to facilitate subsequent processing steps such as mounting the magnetic induction sensor 41 and forming the solder bump on the second surface of the substrate 100. In one embodiment, the material of the dispensing layer is a resin (glue), and the forming process is a dispensing process, an injection molding process, or a transformation process.
参考图6,在基板100的第二表面102上形成金属线路层110。Referring to FIG. 6, a metal wiring layer 110 is formed on the second surface 102 of the substrate 100.
所述金属线路层110作为互连结构的一部分,即本实施例中,所述互连线路除了包括位于基板100中的第一互连线路103和第二互连线路104,还包括位于基板100的第二表面上的金属线路层110,第一互连线路103、第二互连线路104和金属线路层110之间相互绝缘。The metal circuit layer 110 is a part of the interconnect structure. In the embodiment, the interconnect line includes the first interconnect line 103 and the second interconnect line 104 in the substrate 100, and further includes the substrate 100. The metal wiring layer 110 on the second surface, the first interconnection 103, the second interconnection 104, and the metal wiring layer 110 are insulated from each other.
所述金属线路层110用于后续与磁感应传感器连接,金属线路层100作为第一部分金属线路层,在基板100的第二表面102形成金属线路层100的同时,在基板100的第二表面102还可以形成第二部分金属线路层和第三部分金属线路层,第二部分金属线路层与第一互连线路103电连接,第三部分金属线路层与第二互连线路104电连接,第一部分金属线路层、第二部分金属线路层和第三部分金属线路层相互之间是不电连接的。The metal circuit layer 110 is used for subsequent connection with a magnetic induction sensor. The metal circuit layer 100 serves as a first partial metal circuit layer. The second surface 102 of the substrate 100 is also formed on the second surface 102 of the substrate 100 while the metal wiring layer 100 is formed on the second surface 102 of the substrate 100. A second partial metal wiring layer and a third partial metal wiring layer may be formed, the second partial metal wiring layer is electrically connected to the first interconnection line 103, and the third partial metal wiring layer is electrically connected to the second interconnection line 104, the first portion The metal wiring layer, the second partial metal wiring layer, and the third partial metal wiring layer are not electrically connected to each other.
本实例中,第一部分金属线路层、第二部分金属线路层和第三部分金属线路层同时形成且厚度相同,第一部分金属线路层用于将磁感应传感器的第三外接焊盘引至基板的第二表面,便于与第一部分金属线路层表面形成的第三焊接凸起实现电连接,第二部分金属线路层作为与第一互连线路连接的焊盘,便于后续在第一部分金属线路层表面形成第一焊接凸起,第三部分金属线路层作为与第二互连线路连接的焊盘,便于后续在第三部分金属线路层表面形成第二焊接凸起,第一部分金属线路层、第二部分金属线路层和第三部分金属线路层的厚度相同,使得形成第一焊接凸起、第二焊接凸起和第三焊接凸起的高度保持一致,减小第一焊接凸起、第二焊接凸起和第三焊接凸起工艺难度。In this example, the first partial metal wiring layer, the second partial metal wiring layer and the third partial metal wiring layer are simultaneously formed and have the same thickness, and the first partial metal wiring layer is used for guiding the third external bonding pad of the magnetic induction sensor to the substrate. a second surface for facilitating electrical connection with a third solder bump formed on a surface of the first portion of the metal wiring layer, and a second portion of the metal wiring layer as a pad connected to the first interconnecting line for facilitating subsequent formation on the surface of the first portion of the metal wiring layer a first solder bump, the third portion of the metal circuit layer as a pad connected to the second interconnect line, to facilitate subsequent formation of a second solder bump on the surface of the third portion of the metal circuit layer, the first portion of the metal circuit layer, the second portion The metal circuit layer and the third portion of the metal circuit layer have the same thickness, such that the heights of the first solder bump, the second solder bump and the third solder bump are kept uniform, and the first solder bump and the second solder bump are reduced. Starting and third welding convex process difficulty.
本实施例中,所述第一部分金属线路层、第二部分金属线路层和第三部分金属线路层是位于基板100的第二表面102上,在其他实施例中,所述第一部分金属线路层、第二部分金属线路层和第三部分金属线路层嵌入基板100的内部,第一部分金属线路层、第二部分金属线路层和第三部分 金属线路层的表面与基板100的第二表面102齐平,第一部分金属线路层、第二部分金属线路层和第三部分金属线路层的形成工艺可以与形成第一互连线路和第二互连线路同时进行,在简化工艺步骤的同时,有利于减小封装结构的体积。In this embodiment, the first partial metal circuit layer, the second partial metal circuit layer and the third partial metal circuit layer are located on the second surface 102 of the substrate 100. In other embodiments, the first partial metal circuit layer The second partial metal wiring layer and the third partial metal wiring layer are embedded in the interior of the substrate 100, and the surfaces of the first partial metal wiring layer, the second partial metal wiring layer and the third partial metal wiring layer are flush with the second surface 102 of the substrate 100. Flat, the forming process of the first partial metal wiring layer, the second partial metal wiring layer and the third partial metal wiring layer may be performed simultaneously with forming the first interconnection line and the second interconnection line, which is advantageous in simplifying the process steps Reduce the size of the package structure.
在一实施例中,所述金属线路层110的形成步骤在将陀螺仪传感器21和加速度传感器31分别安装在基板100的第一表面101的步骤之前进行,一方面减小金属线路层110的形成工艺难度,另一方面,防止形成金属线路层110时对陀螺仪传感器21和加速度传感器31的损伤。In one embodiment, the step of forming the metal wiring layer 110 is performed before the step of mounting the gyro sensor 21 and the acceleration sensor 31 on the first surface 101 of the substrate 100, respectively, to reduce the formation of the metal wiring layer 110. The process difficulty, on the other hand, prevents damage to the gyro sensor 21 and the acceleration sensor 31 when the metal wiring layer 110 is formed.
所述金属线路层304的材料可以为W、Al、Cu、Ti、Ag、Au、Pt、Ni其中一种或几种。The material of the metal wiring layer 304 may be one or more of W, Al, Cu, Ti, Ag, Au, Pt, and Ni.
在一实施例中,所述金属线路层110的形成过程为:在基板100的第二表面102形成金属材料层,金属材料层的形成工艺可以为溅射;在金属材料层表面形成掩膜层,所述掩膜层中具有暴露出金属材料层表面的若干开口;以所述掩膜层为掩膜,刻蚀去除开口暴露的金属材料层,基板100的第二表面102剩余的金属材料层为金属线路层;去除所述掩膜层。In an embodiment, the metal circuit layer 110 is formed by forming a metal material layer on the second surface 102 of the substrate 100, and the metal material layer may be formed by sputtering; forming a mask layer on the surface of the metal material layer. The mask layer has a plurality of openings exposing the surface of the metal material layer; the mask layer is used as a mask to etch away the exposed metal material layer of the opening, and the remaining metal material layer of the second surface 102 of the substrate 100 a metal circuit layer; the mask layer is removed.
在另一实施例中,所述金属线路层110的形成过程为:在所述基板100的第二表面102形成介质层,所述介质层中具有暴露出基板100的第二表面102的若干凹槽;在凹槽中形成填充满凹槽的金属线路层110,所述填充工艺为电镀。In another embodiment, the metal wiring layer 110 is formed by forming a dielectric layer on the second surface 102 of the substrate 100, the dielectric layer having a plurality of recesses exposing the second surface 102 of the substrate 100. a trench; a metal wiring layer 110 filled with a recess is formed in the recess, and the filling process is electroplating.
在其他实施例中,所述金属线路层110也可以通过印刷工艺形成。In other embodiments, the metal wiring layer 110 can also be formed by a printing process.
参考图7,将磁感应传感器41安装在基板100的第二表面102,磁感应传感器41的第三外接焊盘402通过第三金属连接结构111与互连线路(金属线路层110)电连接。Referring to FIG. 7, the magnetic induction sensor 41 is mounted on the second surface 102 of the substrate 100, and the third external contact pad 402 of the magnetic induction sensor 41 is electrically connected to the interconnection (metal wiring layer 110) through the third metal connection structure 111.
本实施例中,在基板100的第二表面102形成金属线路层110,磁感应传感器41倒装在基板的第二表面102并通过第三金属连接结构111与金属线路层110电连接这样的连接方式,使得磁感应传感器41的背面到基板100的第二表面102的厚度较小,后续在基板100的第二表面102形成焊 接凸起时,焊接凸起的高度可以较小,有利于减少焊接凸起形成的工艺难度以及减少整个封装结构的体积。In this embodiment, the metal circuit layer 110 is formed on the second surface 102 of the substrate 100, and the magnetic induction sensor 41 is flip-chip mounted on the second surface 102 of the substrate and electrically connected to the metal circuit layer 110 through the third metal connection structure 111. The thickness of the back surface of the magnetic induction sensor 41 to the second surface 102 of the substrate 100 is small. When the second surface 102 of the substrate 100 is formed with a solder bump, the height of the solder bump can be small, which is advantageous for reducing the solder bump. The process difficulty is formed and the volume of the entire package structure is reduced.
本实施例中,所述第三金属连接结构111与金属线路层110中的第一部分金属线路层电连接。In this embodiment, the third metal connection structure 111 is electrically connected to the first part of the metal circuit layer in the metal circuit layer 110.
所述第三金属连接结构111的材料的焊料,锡、锡银、锡铅、锡银铜、锡银锌、锡锌、锡铋铟、锡铟、锡金、锡铜、锡锌铟或者锡银锑等金属中的一种或者多种。Solder of the material of the third metal connection structure 111, tin, tin silver, tin lead, tin silver copper, tin silver zinc, tin zinc, tin antimonide indium, tin indium, tin gold, tin copper, tin zinc indium or tin silver One or more of metals such as ruthenium.
由于将所述磁感应传感器41倒装在基板100的第二表面102上时,需要进行回流工艺(热处理工艺),使得第三金属连接结构111与基板100的第二表面102上的金属线路层110电连接,因而,在一实施例中,所述磁感应传感器41倒装在基板100的第二表面102上的步骤,在将陀螺仪传感器21和加速度传感器31分别安装在基板100的第一表面101的步骤之前以及在基板100的第二表面102上形成金属线路层110步骤之后进行,从而防止回流工艺对陀螺仪传感器21和加速度传感器31的损伤。Since the magnetic induction sensor 41 is flipped on the second surface 102 of the substrate 100, a reflow process (heat treatment process) is required to make the third metal connection structure 111 and the metal wiring layer 110 on the second surface 102 of the substrate 100. Electrically connected, thus, in one embodiment, the magnetic induction sensor 41 is flipped over the second surface 102 of the substrate 100, and the gyro sensor 21 and the acceleration sensor 31 are mounted on the first surface 101 of the substrate 100, respectively. The step before and after the step of forming the metal wiring layer 110 on the second surface 102 of the substrate 100 is performed, thereby preventing damage to the gyro sensor 21 and the acceleration sensor 31 by the reflow process.
在一实施例中,还包括形成覆盖所述磁感应传感器41以及第三金属连接结构111表面以及填充相邻第三金属连接结构111空间的第三点胶层,通过第三点胶层和基板100的第二表面102将磁感应传感器41的磁场感应区401密封,防止后续封装过程对磁场感应区401的损伤以及在使用过程中防潮防腐蚀,并且通过形成第三点胶层,无需额外在磁感应传感器41的正面形成密封盖,减小封装结构的体积的同时,实现密封功能。第三点胶层的材料为树脂胶,形成工艺为点胶工艺。In an embodiment, the method further includes forming a third dispensing layer covering the surface of the magnetic induction sensor 41 and the third metal connecting structure 111 and filling the space of the adjacent third metal connecting structure 111, through the third dispensing layer and the substrate 100. The second surface 102 seals the magnetic field sensing region 401 of the magnetic induction sensor 41, prevents damage to the magnetic field sensing region 401 by the subsequent packaging process, and prevents moisture and corrosion during use, and does not require additional magnetic induction sensors by forming a third dispensing layer. The front surface of the 41 forms a sealing cover, which reduces the volume of the package structure and achieves a sealing function. The material of the third layer of the glue layer is a resin glue, and the forming process is a dispensing process.
参考图8,在基板100的第二表面102形成若干焊接凸起,焊接凸起与互连线路电连接。Referring to FIG. 8, a plurality of solder bumps are formed on the second surface 102 of the substrate 100, the solder bumps being electrically connected to the interconnect lines.
本实施例中所述焊接凸起包括第一焊接凸起112、第二焊接凸起114和第三焊接凸起113,第一焊接凸起112与第一互连线路103电连接,第二焊接凸起114与第二互连线路104电连接,第三焊接凸起113与金属线路层110电连接。In the embodiment, the solder bump includes a first solder bump 112, a second solder bump 114, and a third solder bump 113. The first solder bump 112 is electrically connected to the first interconnecting line 103, and the second soldering The bump 114 is electrically connected to the second interconnecting line 104, and the third solder bump 113 is electrically connected to the metal wiring layer 110.
本实施例中,所述第一焊接凸起112通过第二部分金属线路层与第一互连线路电连接,所述第二焊接凸起114通过第三部分金属线路层与第二互连线路电连接,所述第三焊接凸起113与金属线路层110(第三部分金属线路层)电连接。In this embodiment, the first solder bumps 112 are electrically connected to the first interconnecting lines through the second portion of the metal wiring layer, and the second solder bumps 114 pass through the third portion of the metal wiring layer and the second interconnecting lines. Electrically connected, the third solder bump 113 is electrically connected to the metal wiring layer 110 (third portion metal wiring layer).
所述第一焊接凸起112、第二焊接凸起114和第三焊接凸起113的材料为焊料,所述焊料可以为锡、锡银、锡铅、锡银铜、锡银锌、锡锌、锡铋铟、锡铟、锡金、锡铜、锡锌铟或者锡银锑等金属中的一种或者多种。第一焊接凸起112、第二焊接凸起114和第三焊接凸起113可以通过电镀或网板应刷工艺形成。The material of the first solder bump 112, the second solder bump 114 and the third solder bump 113 is solder, and the solder may be tin, tin silver, tin lead, tin silver copper, tin silver zinc, tin zinc One or more of metals such as tin antimonide, tin indium, tin gold, tin copper, tin zinc indium or tin silver crucible. The first solder bumps 112, the second solder bumps 114, and the third solder bumps 113 may be formed by a plating or stencil brushing process.
在其他实施例中,所述第一焊接凸起112、第二焊接凸起114和第三焊接凸起113包括位于基板100的第二表面102上的金属凸块和位于金属凸块表面的焊料层,金属凸块的材料可以为铝、镍、锡、钨、铂、铜、钛、铬、钽、金、银中的一种或几种;焊料层的材料可以为锡、锡银、锡铅、锡银铜、锡银锌、锡锌、锡铋铟、锡铟、锡金、锡铜、锡锌铟或者锡银锑等金属中的一种或者多种。In other embodiments, the first solder bumps 112, the second solder bumps 114, and the third solder bumps 113 include metal bumps on the second surface 102 of the substrate 100 and solder on the surface of the metal bumps. The material of the metal bump may be one or more of aluminum, nickel, tin, tungsten, platinum, copper, titanium, chromium, ruthenium, gold, silver; the material of the solder layer may be tin, tin silver, tin One or more of metals such as lead, tin-silver-copper, tin-silver-zinc, tin-zinc, tin-bismuth-indium, tin-indium, stannic, tin-copper, tin-zinc-indium, or tin-silver-tellurium.
第一焊接凸起112、第二焊接凸起114和第三焊接凸起113作为整个MEMS封装结构与外部的芯片或电路进行通信的端口,使得陀螺仪传感器21、加速度传感器31、磁感应触感器41感应的电信号可以通过第一焊接凸起112、第二焊接凸起114和第三焊接凸起113传出。The first solder bumps 112, the second solder bumps 114, and the third solder bumps 113 serve as ports for communication of the entire MEMS package structure with an external chip or circuit, such that the gyro sensor 21, the acceleration sensor 31, and the magnetic induction touch sensor 41 The induced electrical signal can be transmitted through the first solder bump 112, the second solder bump 114, and the third solder bump 113.
在其他实施例中,还包括形成覆盖基板100的第二表面102以及第一焊接凸起112、第二焊接凸起114和第三焊接凸起113部分侧壁表面的塑封层。本实施例中,通过上述方法使得陀螺仪传感器21、加速度传感器31、磁感应触感器41集成在一个MEMS封装结构中,减小了MEMS封装结构的体积,提高了集成度。并且,由于磁感应触感器41对磁性材料比较敏感,本发明中磁感应触感器41相对于陀螺仪传感器21和加速度传感器31安装在基板100的不同表面,使得磁感应触感器41不会受到陀螺仪传感器21、加速度传感器31的干扰,提高MEMS封装结构的检测精度。In other embodiments, a molding layer is formed that forms the second surface 102 of the cover substrate 100 and the sidewall portions of the first solder bumps 112, the second solder bumps 114, and the third solder bumps 113. In this embodiment, the gyro sensor 21, the acceleration sensor 31, and the magnetic induction touch sensor 41 are integrated in one MEMS package structure by the above method, which reduces the volume of the MEMS package structure and improves the integration degree. Moreover, since the magnetic induction touch sensor 41 is relatively sensitive to magnetic materials, the magnetic induction touch sensor 41 is mounted on different surfaces of the substrate 100 with respect to the gyro sensor 21 and the acceleration sensor 31 in the present invention, so that the magnetic induction touch sensor 41 is not affected by the gyro sensor 21. The interference of the acceleration sensor 31 improves the detection accuracy of the MEMS package structure.
第二实施例Second embodiment
图9-图14为本发明第二实施例MEMS传感器封装结构形成过程的结构示意图。9 to FIG. 14 are structural diagrams showing a process of forming a MEMS sensor package structure according to a second embodiment of the present invention.
本实施例与前述实施例的区别在于,陀螺仪传感器21与第一互连线路103、加速度传感器31与第二互连线路104的连接方式不同,本实施例中,第一金属连接结构203或206贯穿陀螺仪传感器21的背面和部分厚度,并与陀螺仪传感器21正面的第一外接焊盘202电连接,第二金属连接结构303或306贯穿加速度传感器31的背面和部分厚度,并与加速度传感器31正面的第二外接焊盘302电连接,当陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101,使得第一金属连接结构203与第一互连线路103电连接,使得第二金属连接结构203与第二互连线路104电连接的连接方式,使得陀螺仪传感器21和加速度传感器31与基板100的第一表面101之间的厚度较小,有利于减小封装结构的体积。需要说明的是,本实施例中相同结构或类似结构的形成过程和设置请参考前述实施例中相关结构的形成过程和设置,在本实施例中不再赘述。The difference between the embodiment and the foregoing embodiment is that the gyro sensor 21 is different from the first interconnection 103, the acceleration sensor 31, and the second interconnection 104. In this embodiment, the first metal connection structure 203 or 206 penetrates the back surface and a portion of the thickness of the gyro sensor 21 and is electrically connected to the first external pad 202 on the front surface of the gyro sensor 21, and the second metal connection structure 303 or 306 penetrates the back surface and a portion of the thickness of the acceleration sensor 31, and the acceleration The second external pads 302 on the front side of the sensor 31 are electrically connected. When the gyro sensor 21 and the acceleration sensor 31 are attached to the first surface 101 of the substrate 100, the first metal connection structure 203 is electrically connected to the first interconnection 103. The connection manner of electrically connecting the second metal connection structure 203 and the second interconnection line 104 is such that the thickness between the gyro sensor 21 and the acceleration sensor 31 and the first surface 101 of the substrate 100 is small, which is advantageous for reducing the package. The volume of the structure. It should be noted that, in the present embodiment, the forming process and the setting of the same structure or the like are referred to the forming process and the setting of the related structure in the foregoing embodiment, and details are not described in this embodiment.
参考图9和图11,陀螺仪传感器21中形成有第一金属连接结构203或206,所述第一金属连接结构203或206贯穿陀螺仪传感器21的背面和部分厚度,并与陀螺仪传感器21正面的第一外接焊盘202电连接。Referring to FIGS. 9 and 11, a first metal connection structure 203 or 206 is formed in the gyro sensor 21, and the first metal connection structure 203 or 206 penetrates the back surface and a portion of the thickness of the gyro sensor 21, and the gyro sensor 21 The front first outer pads 202 are electrically connected.
在一实施例中,请参考图9,所述第一金属连接结构203的形成过程为:沿背面刻蚀所述刻蚀陀螺仪传感器21,在陀螺仪传感器21中形成暴露出第一外接焊盘202底部表面的刻蚀孔;在刻蚀孔中填充满金属,形成第一金属连接结构203。In an embodiment, referring to FIG. 9 , the first metal connection structure 203 is formed by etching the etched gyro sensor 21 along the back surface and forming a first external solder in the gyro sensor 21 . An etched hole on the bottom surface of the disk 202; the etched hole is filled with metal to form a first metal connection structure 203.
在另一实施例中,请参考图11,所述第一金属连接结构206的形成过程为:沿背面刻蚀所述陀螺仪传感器21,在陀螺仪传感器21中形成暴露出第一外接焊盘202底部表面的凹槽;在所述凹槽的侧壁和底部表面以及陀螺仪传感器21的背面形成金属线路层,刻蚀去除陀螺仪传感器21背面上的部分金属线路层,在凹槽的侧壁和底部表面以及陀螺仪传感器21的部分背面上形成第一金属连接结构206;形成填充满剩余的凹槽以及陀螺仪传感器21背面上的相邻第一金属连接结构206之间空隙的绝缘介质层,绝 缘介质层的表面与陀螺仪传感器21背面上的第一金属连接结构206表面齐平。In another embodiment, referring to FIG. 11 , the first metal connection structure 206 is formed by etching the gyro sensor 21 along the back surface and forming a first external contact pad in the gyro sensor 21 . a groove of the bottom surface of the 202; a metal wiring layer is formed on the sidewall and the bottom surface of the groove and the back surface of the gyro sensor 21, and a part of the metal wiring layer on the back surface of the gyro sensor 21 is removed by etching, on the side of the groove A first metal connection structure 206 is formed on the wall and bottom surface and a portion of the back surface of the gyro sensor 21; an insulating medium is formed to fill the gap between the remaining recess and the adjacent first metal connection structure 206 on the back surface of the gyro sensor 21. The layer, the surface of the dielectric layer is flush with the surface of the first metal connection 206 on the back side of the gyro sensor 21.
在其他实施例中,所述第一金属连接结构203或206的表面还可以形成焊料层。In other embodiments, the surface of the first metal connection structure 203 or 206 may also form a solder layer.
参考图10和12,加速度传感器31中形成有第二金属连接结构303或306,所述第二金属连接结构303或306贯穿加速度传感器31的背面和部分厚度,并与加速度传感器31正面的第二外接焊盘302电连接。Referring to FIGS. 10 and 12, a second metal connection structure 303 or 306 is formed in the acceleration sensor 31, the second metal connection structure 303 or 306 penetrating the back surface and a portion of the thickness of the acceleration sensor 31, and the second surface of the acceleration sensor 31. The external pads 302 are electrically connected.
在一实施例中,请参考图10,所述第二金属连接结构303的形成过程为:沿背面刻蚀所述刻蚀加速度传感器31,在加速度传感器31中形成暴露出第二外接焊盘302底部表面的刻蚀孔;在刻蚀孔中填充满金属,形成第二金属连接结构303。In an embodiment, referring to FIG. 10, the second metal connection structure 303 is formed by etching the etch acceleration sensor 31 along the back surface and exposing the second external contact pad 302 in the acceleration sensor 31. An etched hole in the bottom surface; the etched hole is filled with metal to form a second metal connection structure 303.
在另一实施例中,请参考图12,所述第二金属连接结构306的形成过程为:沿背面刻蚀所述加速度传感器31,在加速度传感器31中形成暴露出第二外接焊盘302底部表面的凹槽;在所述凹槽的侧壁和底部表面以及加速度传感器31的背面形成金属线路层,刻蚀去除加速度传感器31背面上的部分金属线路层,在凹槽的侧壁和底部表面以及加速度传感器31的部分背面上形成第二金属连接结构306;形成填充满剩余的凹槽以及加速度传感器31背面上的相邻第二金属连接结构306之间空隙的绝缘介质层,绝缘介质层的表面与加速度传感器31背面上的第二金属连接结构306表面齐平。In another embodiment, referring to FIG. 12, the second metal connection structure 306 is formed by etching the acceleration sensor 31 along the back surface and forming a bottom portion of the second external connection pad 302 exposed in the acceleration sensor 31. a groove of the surface; a metal wiring layer is formed on the side wall and the bottom surface of the groove and the back surface of the acceleration sensor 31, and a part of the metal wiring layer on the back surface of the acceleration sensor 31 is etched away, on the side wall and the bottom surface of the groove And forming a second metal connection structure 306 on a portion of the back surface of the acceleration sensor 31; forming an insulating dielectric layer filling the remaining grooves and the gap between adjacent second metal connection structures 306 on the back surface of the acceleration sensor 31, the dielectric layer The surface is flush with the surface of the second metal connection 306 on the back side of the acceleration sensor 31.
在其他实施例中,所述第二金属连接结构303或306的表面还可以形成焊料层。In other embodiments, the surface of the second metal connection structure 303 or 306 may also form a solder layer.
参考图13,将图9和图11所示的陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101,使得第一金属连接结构203与第一互连线路103电连接,使得第二金属连接结构203与第二互连线路104电连接。Referring to FIG. 13, the gyro sensor 21 and the acceleration sensor 31 shown in FIGS. 9 and 11 are attached to the first surface 101 of the substrate 100 such that the first metal connection structure 203 is electrically connected to the first interconnection 103. The second metal connection structure 203 is electrically connected to the second interconnection line 104.
贴合过程可以采用直接键合工艺、金属扩散键合、阳极键合、焊料键 合中一种或几种的组合。The bonding process may employ one or a combination of a direct bonding process, a metal diffusion bonding, an anodic bonding, and a solder bonding.
在另一实施例中,请参考图14,将图10和图12所示的陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101,使得第一金属连接结构203与第一互连线路103电连接,使得第二金属连接结构203与第二互连线路104电连接。In another embodiment, referring to FIG. 14 , the back surface of the gyro sensor 21 and the acceleration sensor 31 shown in FIG. 10 and FIG. 12 are attached to the first surface 101 of the substrate 100 such that the first metal connection structure 203 and the first An interconnect line 103 is electrically connected such that the second metal connection structure 203 is electrically coupled to the second interconnect line 104.
贴合过程可以采用直接键合工艺、金属扩散键合、阳极键合、焊料键合中一种或几种的组合。The bonding process may employ one or a combination of a direct bonding process, a metal diffusion bonding, an anodic bonding, and a solder bonding.
第三实施例Third embodiment
图15-图17为本发明第三实施例MEMS传感器封装结构形成过程的结构示意图。15 to FIG. 17 are structural diagrams showing a process of forming a MEMS sensor package structure according to a third embodiment of the present invention.
本实施例与前述实施例的区别在于,陀螺仪传感器21与第一互连线路、加速度传感器31与第二互连线路的连接方式不同,本实施例中第一金属连接结构208形成在陀螺仪传感器21的第一外接焊盘202表面,第二金属连接结构308形成在加速度传感器31的第一外接焊盘302表面,因而所述陀螺仪传感器21和加速度传感器31可以分别倒装在基板100的第一表面101上分别与第一互连线路103和第二互连线路104连接,减小工艺难度,并有利于减小封装结构的体积。需要说明的是,本实施例中相同结构或类似结构的形成过程和设置请参考前述实施例中相关结构的形成过程和设置,在本实施例中不再赘述。The difference between the embodiment and the foregoing embodiment is that the gyro sensor 21 is different from the first interconnection line, the acceleration sensor 31 and the second interconnection. In the embodiment, the first metal connection structure 208 is formed on the gyroscope. The surface of the first outer pad 202 of the sensor 21, the second metal connection structure 308 is formed on the surface of the first outer pad 302 of the acceleration sensor 31, so that the gyro sensor 21 and the acceleration sensor 31 can be flipped on the substrate 100, respectively. The first surface 101 is connected to the first interconnecting line 103 and the second interconnecting line 104, respectively, which reduces the process difficulty and is advantageous for reducing the volume of the package structure. It should be noted that, in the present embodiment, the forming process and the setting of the same structure or the like are referred to the forming process and the setting of the related structure in the foregoing embodiment, and details are not described in this embodiment.
参考图15和图16,在陀螺仪传感器21的第一外接焊盘202表面形成第一金属连接结构208,在加速度传感器31的第二外接焊盘302表面形成第二金属连接结构308。Referring to FIGS. 15 and 16, a first metal connection structure 208 is formed on the surface of the first outer pad 202 of the gyro sensor 21, and a second metal connection structure 308 is formed on the surface of the second outer pad 302 of the acceleration sensor 31.
所述第一金属连接结构208和第二金属连接结构308的材料为焊料,所述焊料可以为锡、锡银、锡铅、锡银铜、锡银锌、锡锌、锡铋铟、锡铟、锡金、锡铜、锡锌铟或者锡银锑等金属中的一种或者多种。第一金属连接结构208和第二金属连接结构308可以通过电镀或网板应刷工艺形成。The material of the first metal connection structure 208 and the second metal connection structure 308 is solder, and the solder may be tin, tin silver, tin lead, tin silver copper, tin silver zinc, tin zinc, tin antimonide, tin indium. One or more of metals such as tin, tin, tin, zinc, indium or tin-silver. The first metal connection structure 208 and the second metal connection structure 308 may be formed by a plating or stencil brushing process.
参考图17,将图15和图16所示的陀螺仪传感器21和加速度传感器 31分别倒装在基板100的第一表面101上,第一金属连接结构208与第一互连线路103电连接,第二金属连接结构308与第二互连线路104电连接。Referring to FIG. 17, the gyro sensor 21 and the acceleration sensor 31 shown in FIGS. 15 and 16 are respectively flipped on the first surface 101 of the substrate 100, and the first metal connection structure 208 is electrically connected to the first interconnection 103. The second metal connection structure 308 is electrically connected to the second interconnection 104.
在一实施例中,还包括形成覆盖所述陀螺仪传感器21以及第一金属连接结构208表面以及填充相邻第一金属连接结构208空间的第四点胶层,通过第三点胶层和基板的第一表面将陀螺仪传感器21的角速度感应区201密封,防止后续封装过程对角速度感应区201的损伤以及在使用过程中防潮防腐蚀,并且通过形成第三点胶层,无需额外在陀螺仪传感器21的正面形成密封盖,减小封装结构的体积的同时,实现密封功能。第四点胶层的材料为树脂(胶),形成工艺为点胶工艺、注塑工艺或转塑工艺。In an embodiment, the method further includes forming a fourth dispensing layer covering the surface of the gyro sensor 21 and the first metal connecting structure 208 and filling the space of the adjacent first metal connecting structure 208, through the third dispensing layer and the substrate The first surface seals the angular velocity sensing region 201 of the gyro sensor 21 to prevent damage to the angular velocity sensing region 201 of the subsequent packaging process and moisture and corrosion during use, and by forming a third dispensing layer, without additional gyroscopes The front surface of the sensor 21 forms a sealing cover, which reduces the volume of the package structure and achieves a sealing function. The material of the fourth layer of the glue layer is a resin (glue), and the forming process is a dispensing process, an injection molding process or a transformation process.
还包括形成覆盖所述加速度传感器31以及第二金属连接结构308表面以及填充相邻第二金属连接结构308空间的第五点胶层,通过第五点胶层和基板的第一表面将加速度传感器31的加速度感应区301密封,防止后续封装过程对加速度感应区301的损伤以及在使用过程中防潮防腐蚀,并且通过形成第五点胶层,无需额外在加速度传感器31的正面形成密封盖,减小封装结构的体积的同时,实现密封功能。第五点胶层的材料为树脂胶(胶),形成工艺为点胶工艺、注塑工艺或转塑工艺。The method further includes forming a fifth dispensing layer covering the surface of the acceleration sensor 31 and the second metal connecting structure 308 and filling the space of the adjacent second metal connecting structure 308, and the acceleration sensor is disposed through the fifth dispensing layer and the first surface of the substrate The acceleration sensing region 301 of 31 is sealed to prevent damage to the acceleration sensing region 301 by the subsequent packaging process and moisture and corrosion during use, and by forming a fifth dispensing layer, it is not necessary to additionally form a sealing cover on the front surface of the acceleration sensor 31. The sealing function is achieved while the volume of the small package structure is small. The material of the fifth layer of the glue layer is a resin glue (glue), and the forming process is a dispensing process, an injection molding process or a transformation process.
第四实施例中In the fourth embodiment
图18-图20为本发明第四实施例MEMS传感器封装结构形成过程的结构示意图。18 to FIG. 20 are structural diagrams showing a process of forming a MEMS sensor package structure according to a fourth embodiment of the present invention.
本实施例中与前述实施例中的区别在于,磁感应传感器41与基板100第二表面102上的金属线路层111的连接方式不同,第三金属连接结构403或406贯穿磁感应传感器41的背面和部分厚度,并与磁感应传感器41正面的第三外接焊盘402电连接,所述磁感应传感器41背面贴合于基板100的第二表面102,在减小磁感应传感器41的表面到第一基板100第二表面102厚度的同时,使得磁感应传感器41的磁感应区401能远离基板100的第一表面101上的陀螺仪传感器21和加速度触感器31,在减小封装结构的体积的同时,提高磁感应传感器的检测精度。需要说明的是,本实施例中相同结构或类似结构的形成过程和设置请参考前述实施例中相关结构的 形成过程和设置,在本实施例中不再赘述。并且,本实施例中,陀螺仪传感器21与第一互连线路、加速度传感器31与第二互连线路的连接方式除了图20和图21中披露的连接方式外,可以采用前述实施例中的任一种连接方式,在此不作特别限定。The difference between the present embodiment and the foregoing embodiment is that the magnetic induction sensor 41 is connected to the metal wiring layer 111 on the second surface 102 of the substrate 100 in a different manner, and the third metal connection structure 403 or 406 penetrates the back surface and the portion of the magnetic induction sensor 41. The thickness is electrically connected to the third external pad 402 on the front surface of the magnetic induction sensor 41. The back surface of the magnetic induction sensor 41 is attached to the second surface 102 of the substrate 100, and the surface of the magnetic induction sensor 41 is reduced to the second substrate 100. Simultaneously with the thickness of the surface 102, the magnetic induction region 401 of the magnetic induction sensor 41 can be moved away from the gyro sensor 21 and the acceleration touch sensor 31 on the first surface 101 of the substrate 100, and the detection of the magnetic induction sensor is improved while reducing the volume of the package structure. Precision. It should be noted that, in the present embodiment, the forming process and the setting of the same structure or the like are referred to the forming process and the setting of the related structure in the foregoing embodiment, and are not described in detail in this embodiment. Moreover, in this embodiment, the connection manner of the gyro sensor 21 and the first interconnection line, the acceleration sensor 31 and the second interconnection line may be the same as the connection manner disclosed in FIG. 20 and FIG. Any one of the connection methods is not particularly limited herein.
参考图18和19,在磁感应传感器41中形成第三金属连接结构403或406,所述第三金属连接结构403或406贯穿磁感应传感器41的背面和部分厚度,并与磁感应传感器41正面的第三外接焊盘402电连接。Referring to FIGS. 18 and 19, a third metal connection structure 403 or 406 is formed in the magnetic induction sensor 41, the third metal connection structure 403 or 406 penetrating the back surface and a portion of the thickness of the magnetic induction sensor 41, and the third surface of the magnetic induction sensor 41. The external pads 402 are electrically connected.
在一实施例中,请参考图18,所述第三金属连接结构403的形成过程为:沿背面刻蚀所述刻蚀磁感应传感器41,在磁感应传感器41中形成暴露出第三外接焊盘402底部表面的刻蚀孔;在刻蚀孔中填充满金属,形成第三金属连接结构403。In an embodiment, referring to FIG. 18, the third metal connection structure 403 is formed by etching the etched magnetic induction sensor 41 along the back surface, and exposing the exposed third external contact pad 402 in the magnetic induction sensor 41. An etched hole in the bottom surface; the etched hole is filled with metal to form a third metal connection structure 403.
在另一实施例中,请参考图19,所述第三金属连接结构406的形成过程为:沿背面刻蚀所述第三金属连接结构403,在第三金属连接结构403中形成暴露出第三外接焊盘402底部表面的凹槽;在所述凹槽的侧壁和底部表面以及第三金属连接结构406的背面形成金属线路层,刻蚀去除第三金属连接结构406背面上的部分金属线路层,在凹槽的侧壁和底部表面以及第三金属连接结构406的部分背面上形成第三金属连接结构406;形成填充满剩余的凹槽以及第三金属连接结构406背面上的相邻第三金属连接结构406之间空隙的绝缘介质层,绝缘介质层的表面与第三金属连接结构406背面上的第三金属连接结构406表面齐平。In another embodiment, referring to FIG. 19, the third metal connection structure 406 is formed by etching the third metal connection structure 403 along the back surface and forming an exposed surface in the third metal connection structure 403. a recess of the bottom surface of the third external contact pad 402; a metal wiring layer is formed on the sidewall and the bottom surface of the recess and the back surface of the third metal connection structure 406, and a portion of the metal on the back surface of the third metal connection structure 406 is etched away a circuit layer, a third metal connection structure 406 is formed on the sidewalls and the bottom surface of the recess and a portion of the back surface of the third metal connection structure 406; forming a recess filled with the remaining recess and adjacent on the back surface of the third metal connection structure 406 An insulating dielectric layer between the third metal connection structures 406, the surface of the insulating dielectric layer being flush with the surface of the third metal connection structure 406 on the back surface of the third metal connection structure 406.
在一实施例中,所述磁感应传感器41正面上具有第三密封盖410,第三密封盖410密封所述磁场感应区401,若干第三外接焊盘402位于第三密封盖410两侧。第三密封盖410密封所述磁场感应区401,在后续的封装过程中防止磁场感应区401的损伤或者在使用时防潮防腐蚀,且若干第三外接焊盘402位于第三密封盖410两侧,第三密封盖410存在不会影响后续的封装过程。第三密封盖410的材料可以为硅,玻璃或陶瓷,可以通过粘合层粘合或者键合工艺形成在磁感应传感器41的正面上。In one embodiment, the magnetic induction sensor 41 has a third sealing cover 410 on the front surface thereof, and the third sealing cover 410 seals the magnetic field sensing area 401, and the plurality of third external bonding pads 402 are located on both sides of the third sealing cover 410. The third sealing cover 410 seals the magnetic field sensing area 401 to prevent damage of the magnetic field sensing area 401 or moisture and corrosion during use in the subsequent packaging process, and a plurality of third external pads 402 are located on both sides of the third sealing cover 410. The presence of the third sealing cover 410 does not affect the subsequent packaging process. The material of the third sealing cover 410 may be silicon, glass or ceramic, and may be formed on the front surface of the magnetic induction sensor 41 by an adhesive layer bonding or bonding process.
在其他实施例中,所述第一金属连接结构203或206的表面还可以形 成焊料层。In other embodiments, the surface of the first metal connection structure 203 or 206 may also form a solder layer.
参考图20,将图18所示的磁感应传感器41的背面贴合于基板100的第二表面102,使得第一金属连接结构403与基板100的第二表面102上的金属线路层110电连接。Referring to FIG. 20, the back surface of the magnetic induction sensor 41 shown in FIG. 18 is attached to the second surface 102 of the substrate 100 such that the first metal connection structure 403 is electrically connected to the metal wiring layer 110 on the second surface 102 of the substrate 100.
在另一实施例中,请参考图21,将图18所示的磁感应传感器41的背面贴合于基板100的第二表面102,使得第一金属连接结构406与基板100的第二表面上的金属线路层110电连接。In another embodiment, referring to FIG. 21, the back surface of the magnetic induction sensor 41 shown in FIG. 18 is attached to the second surface 102 of the substrate 100 such that the first metal connection structure 406 and the second surface of the substrate 100 The metal wiring layer 110 is electrically connected.
贴合过程可以采用直接键合工艺、金属扩散键合、阳极键合、焊料键合中一种或几种的组合。The bonding process may employ one or a combination of a direct bonding process, a metal diffusion bonding, an anodic bonding, and a solder bonding.
本实施例中,所述第三金属连接结构403或406贯穿磁感应传感器41的背面和部分厚度,并与磁感应传感器41正面的第三外接焊盘402电连接,所述磁感应传感器41背面贴合于基板100的第二表面102,且所述陀螺仪传感器21和加速度传感器31的背面通过粘合层105、106贴合于基板100的第一表面101,通过引线键合工艺第一金属连接结构109和第二金属连接结构108,第一金属连接结构109的两端分别与第一外接焊盘202和第一互连线路103电连接,第二金属连接结构108的两端分别与第二外接焊盘302和第二互连线路104电连接。In this embodiment, the third metal connection structure 403 or 406 penetrates the back surface and a portion of the thickness of the magnetic induction sensor 41, and is electrically connected to the third external contact pad 402 on the front surface of the magnetic induction sensor 41. The back of the magnetic induction sensor 41 is attached to the back surface. The second surface 102 of the substrate 100, and the back surface of the gyro sensor 21 and the acceleration sensor 31 are adhered to the first surface 101 of the substrate 100 through the adhesive layers 105, 106, and the first metal connection structure 109 is passed through a wire bonding process. And the second metal connection structure 108, the two ends of the first metal connection structure 109 are electrically connected to the first outer connection pad 202 and the first interconnection line 103, respectively, and the two ends of the second metal connection structure 108 are respectively soldered to the second external connection The disk 302 and the second interconnection 104 are electrically connected.
在其他实施例中,所述第三金属连接结构403或406贯穿磁感应传感器41的背面和部分厚度,并与磁感应传感器41正面的第三外接焊盘402电连接,所述磁感应传感器41背面贴合于基板100的第二表面102,且(参考图13和14)第一金属连接结构203或206贯穿陀螺仪传感器21的背面和部分厚度,并与陀螺仪传感器21正面的第一外接焊盘202电连接,第二金属连接结构303或306贯穿加速度传感器31的背面和部分厚度,并与加速度传感器31正面的第二外接焊盘302电连接,陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101,使得第一金属连接结构203与第一互连线路103电连接,陀螺仪传感器21、加速度传感器31和磁感应传感器41这样的集成封装方式,使得陀螺仪传感器21、加速度传感器31和磁感应传感器41表面到基板100第一表面101的后续均较小,有 利于减小封装结构的体积,并且磁感应传感器41的磁感应区401远离陀螺仪传感器21、加速度传感器31,使得磁感应传感器41受到陀螺仪传感器21、加速度传感器31的干扰很小,提高了磁感应传感器41的检测精度。In other embodiments, the third metal connection structure 403 or 406 penetrates the back surface and a portion of the thickness of the magnetic induction sensor 41, and is electrically connected to the third external contact pad 402 on the front surface of the magnetic induction sensor 41. The magnetic induction sensor 41 is attached to the back surface. On the second surface 102 of the substrate 100, and (refer to FIGS. 13 and 14) the first metal connection structure 203 or 206 penetrates the back surface and a portion of the thickness of the gyro sensor 21, and the first external pad 202 on the front side of the gyro sensor 21 Electrically connected, the second metal connection structure 303 or 306 penetrates the back surface and a portion of the thickness of the acceleration sensor 31, and is electrically connected to the second external contact pad 302 on the front surface of the acceleration sensor 31. The back surface of the gyro sensor 21 and the acceleration sensor 31 are attached to the substrate. The first surface 101 of the 100 causes the first metal connection structure 203 to be electrically connected to the first interconnection line 103, and the integrated package manner of the gyro sensor 21, the acceleration sensor 31, and the magnetic induction sensor 41, so that the gyro sensor 21 and the acceleration sensor 31 and the subsequent surface of the magnetic induction sensor 41 to the first surface 101 of the substrate 100 are smaller, which is advantageous for reducing the volume of the package structure. The magnetic induction region 401 of the magnetic induction sensor 41 is away from the gyro sensor 21 and the acceleration sensor 31, so that the magnetic induction sensor 41 is less interfered by the gyro sensor 21 and the acceleration sensor 31, and the detection accuracy of the magnetic induction sensor 41 is improved.
本发明实施例,还提供给了一种MEMS传感器封装结构,请参考图8,包括:In the embodiment of the present invention, a MEMS sensor package structure is also provided. Referring to FIG. 8, the method includes:
基板100,所述基板100包括第一表面101和相对的第二表面102,所述基板100具有互连线路,互连线路包括位于基板中的第一互连线路103和第二互连线路104;The substrate 100 includes a first surface 101 having an interconnecting line and an opposite second surface 102, the interconnecting line including a first interconnecting line 103 and a second interconnecting line 104 in the substrate ;
陀螺仪传感器21、加速度传感器31和磁感应传感器41,所述陀螺仪传感器21包括若干第一外接焊盘202,所述加速度传感器31包括若干第二外接焊盘302,所述磁感应传感器41包括若干第三外接焊盘401;a gyro sensor 21, an acceleration sensor 31 and a magnetic induction sensor 41, the gyro sensor 21 includes a plurality of first external pads 202, the acceleration sensor 31 includes a plurality of second external pads 302, and the magnetic induction sensor 41 includes a plurality of Three external pads 401;
陀螺仪传感器21和加速度传感器31安装在基板100的第一表面101,陀螺仪传感器21的第一外接焊盘202通过第一金属连接结构109与互连线路(第一互连线路103)电连接,加速度传感器31的第二外接焊盘302通过第二金属连接结构108与互连线路(第二互连线路104)电连接;The gyro sensor 21 and the acceleration sensor 31 are mounted on the first surface 101 of the substrate 100, and the first external pad 202 of the gyro sensor 21 is electrically connected to the interconnection (the first interconnection 103) through the first metal connection structure 109. The second external pad 302 of the acceleration sensor 31 is electrically connected to the interconnection (second interconnection 104) through the second metal connection structure 108;
互连线路还包括位于基板100的第二表面102上的若干金属线路层110;The interconnect line further includes a plurality of metal circuit layers 110 on the second surface 102 of the substrate 100;
磁感应传感器41安装在基板100的第二表面102,磁感应传感器41的第三外接焊盘402通过第三金属连接结构111与互连线路(金属线路层110)电连接;The magnetic induction sensor 41 is mounted on the second surface 102 of the substrate 100, and the third external contact pad 402 of the magnetic induction sensor 41 is electrically connected to the interconnection (metal wiring layer 110) through the third metal connection structure 111;
位于基板100的第二表面102的若干焊接凸起,焊接凸起与互连线路电连接,具体的焊接凸起包括第一焊接凸起112、第二焊接凸起114和第三焊接凸起113,第一焊接凸起112与第一互连线路103电连接,第二焊接凸起114与第二互连线路104电连接,第三焊接凸起113与金属线路层110电连接。a plurality of solder bumps on the second surface 102 of the substrate 100, the solder bumps being electrically connected to the interconnect lines, the specific solder bumps including the first solder bumps 112, the second solder bumps 114, and the third solder bumps 113 The first solder bumps 112 are electrically connected to the first interconnecting lines 103, the second solder bumps 114 are electrically connected to the second interconnecting lines 104, and the third solder bumps 113 are electrically connected to the metal wiring layer 110.
所述陀螺仪传感器21包括正面和相对的背面,所述第一外接焊盘202位于陀螺仪传感器的正面,所述加速度传感器31包括正面和相对的背面, 所述第二外接焊盘302位于加速度传感器的正面,所述磁感应传感器41包括正面和相对的背面,所述第三外接焊盘402位于磁感应传感器的正面。The gyro sensor 21 includes a front surface and an opposite back surface, the first external pad 202 is located on the front surface of the gyro sensor, the acceleration sensor 31 includes a front surface and an opposite back surface, and the second external contact pad 302 is located at an acceleration. On the front side of the sensor, the magnetic induction sensor 41 includes a front side and an opposite back side, and the third external contact pad 402 is located on the front side of the magnetic induction sensor.
本实施例中,所述陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101,第一金属连接结构109和第二金属连接结构108为金属线,第一金属连接结构109的两端分别与第一外接焊盘202和第一互连线路103电连接,第一金属连接结构109的中间部分悬空在陀螺仪传感器21两侧,第二金属连接结构109的两端分别与第二外接焊盘302和第二互连线路104电连接,第二金属连接结构108的中间部分悬空在加速度传感器两侧。In this embodiment, the back surface of the gyro sensor 21 and the acceleration sensor 31 are adhered to the first surface 101 of the substrate 100. The first metal connection structure 109 and the second metal connection structure 108 are metal lines, and the first metal connection structure 109 The two ends are electrically connected to the first outer pad 202 and the first interconnecting line 103, respectively, and the middle portion of the first metal connecting structure 109 is suspended on both sides of the gyro sensor 21, and the two ends of the second metal connecting structure 109 are respectively The second external pad 302 and the second interconnection 104 are electrically connected, and the intermediate portion of the second metal connection 108 is suspended on both sides of the acceleration sensor.
在另一实施例中,请参考图13或14,所述陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101,所述第一金属连接结构203/206贯穿陀螺仪传感器21的背面和部分厚度,并与陀螺仪传感器21正面的第一外接焊盘202电连接,所述第二金属连接结构303/306贯穿加速度传感器31的背面与和部分厚度,并与加速度传感器31正面的第二外接焊盘302电连接。In another embodiment, referring to FIG. 13 or 14, the back surface of the gyro sensor 21 and the acceleration sensor 31 are attached to the first surface 101 of the substrate 100, and the first metal connecting structure 203/206 penetrates the gyro sensor. The back surface and the partial thickness of 21 are electrically connected to the first outer pad 202 on the front surface of the gyro sensor 21, and the second metal connection structure 303/306 penetrates the back surface and the partial thickness of the acceleration sensor 31, and the acceleration sensor 31. The front second external pads 302 are electrically connected.
在另一实施例中,所述第一金属连接结构208位于第一外接焊盘202的表面,第二金属连接结构308位于第二外接焊盘302的表面,所述陀螺仪传感器21和加速度传感器31分别倒装在基板100的第一表面101上。In another embodiment, the first metal connection structure 208 is located on the surface of the first external pad 202, and the second metal connection structure 308 is located on the surface of the second external pad 302. The gyro sensor 21 and the acceleration sensor 31 is flip-chip mounted on the first surface 101 of the substrate 100, respectively.
请继续参考图8,本实施中,所述第三金属连接结构111位于第三外接焊盘402的表面,所述磁感应传感器41倒装在基板100的第二表面402上。Referring to FIG. 8 , in the embodiment, the third metal connection structure 111 is located on the surface of the third external pad 402 , and the magnetic induction sensor 41 is flipped on the second surface 402 of the substrate 100 .
在另一实施例中,所述磁感应传感器41背面贴合于基板的第二表面,第三金属连接结构为金属线,第三金属连接结构的两端分别与第三外接焊盘和金属线路层电连接,第三金属连接结构的中间部分悬空在磁感应传感器两侧。In another embodiment, the back surface of the magnetic induction sensor 41 is attached to the second surface of the substrate, the third metal connection structure is a metal line, and the two ends of the third metal connection structure are respectively connected to the third external connection pad and the metal circuit layer. Electrically connected, the middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor.
在另一实施例中,请参考图20和图21,所述磁感应传感器41背面贴合于基板100的第二表面102,所述第三金属连接结构403/406贯穿磁感应 传感器41的背面和部分厚度,并与磁感应传感器41正面的第三外接焊盘403电连接。In another embodiment, referring to FIG. 20 and FIG. 21, the back surface of the magnetic induction sensor 41 is adhered to the second surface 102 of the substrate 100, and the third metal connection structure 403/406 penetrates the back surface and the portion of the magnetic induction sensor 41. The thickness is electrically connected to the third external pad 403 on the front surface of the magnetic induction sensor 41.
在一实施例中,所述陀螺仪传感器为三轴陀螺仪传感器,所述加速度传感器为三轴加速度传感器,所述磁感应传感器为三轴磁感应传感器。In one embodiment, the gyro sensor is a three-axis gyro sensor, the acceleration sensor is a three-axis acceleration sensor, and the magnetic induction sensor is a three-axis magnetic induction sensor.
第五实施例Fifth embodiment
图22-图23为本发明第五实施例MEMS传感器封装结构形成过程的结构示意图。22 to FIG. 23 are structural diagrams showing a process of forming a MEMS sensor package structure according to a fifth embodiment of the present invention.
本实施例与前述实施例的区别在于,本实施例实现一个数据处理芯片501与陀螺仪传感器21、加速度传感器31和磁感应传感器41的集成封装,减小了封装结构的体积,并且所述数据处理芯片501能对陀螺仪传感器21、加速度传感器31和磁感应传感器41感应的信号进行处理,并将处理后的信号从焊接凸起传输。需要说明的是,本实施例中与前述实施例中相同或相似的结构、相同或相似的连接方式的限定或描述,请参考前述实施例中相应的结构、相应的连接方式的限定或描述,本实施例中不再赘述。The difference between this embodiment and the foregoing embodiment is that the present embodiment implements an integrated package of a data processing chip 501 and a gyro sensor 21, an acceleration sensor 31, and a magnetic induction sensor 41, which reduces the volume of the package structure, and the data processing The chip 501 can process signals induced by the gyro sensor 21, the acceleration sensor 31, and the magnetic induction sensor 41, and transmit the processed signals from the solder bumps. It should be noted that, in the present embodiment, the definitions or descriptions of the same or similar structures, the same or similar connection manners in the foregoing embodiments, refer to the corresponding structures in the foregoing embodiments, the definitions or descriptions of the corresponding connection manners, This embodiment will not be described again.
参考图22,提供基板100,所述基板100包括第一表面101和相对的第二表面102,所述基板100中具有互连线路,本实施例中,所述互连线路包括位于基板100中的第三互连线路124和第四互连线路125,以及位于基板100的第二表面102上的若干第一金属线路层116和若干第二金属线路层117,第三互连线路124、第四互连线路125、第一金属线路层116和若干第二金属线路层117相互绝缘;Referring to FIG. 22, a substrate 100 is provided. The substrate 100 includes a first surface 101 and an opposite second surface 102. The substrate 100 has an interconnection line therein. In the embodiment, the interconnection line is included in the substrate 100. Third interconnecting line 124 and fourth interconnecting line 125, and a plurality of first metal wiring layers 116 and a plurality of second metal wiring layers 117 on the second surface 102 of the substrate 100, third interconnecting lines 124, The four interconnecting lines 125, the first metal wiring layer 116 and the plurality of second metal wiring layers 117 are insulated from each other;
提供陀螺仪传感器21、加速度传感器31和磁感应传感器41,所述陀螺仪传感器21包括若干第一外接焊盘202,所述加速度传感器31包括若干第二外接焊盘302,所述磁感应传感器41包括若干第三外接焊盘402;A gyro sensor 21, an acceleration sensor 31 and a magnetic induction sensor 41 are provided. The gyro sensor 21 includes a plurality of first external pads 202, the acceleration sensor 31 includes a plurality of second external pads 302, and the magnetic induction sensor 41 includes a plurality of a third external pad 402;
将陀螺仪传感器21和加速度传感器31分别安装在基板100的第一表面101,陀螺仪传感器21的第一外接焊盘202通过第一金属连接结构109与互连线路(第三互连线路124)电连接,加速度传感器31的第二外接焊盘302通过第二金属连接结构108与互连线路(第四互连线路125)电连 接;The gyro sensor 21 and the acceleration sensor 31 are respectively mounted on the first surface 101 of the substrate 100, and the first external pad 202 of the gyro sensor 21 passes through the first metal connection structure 109 and the interconnection (third interconnection 124) Electrically connected, the second external pad 302 of the acceleration sensor 31 is electrically connected to the interconnection (fourth interconnection 125) through the second metal connection structure 108;
在基板100的第二表面102上形成若干第一金属线路层116和若干第二金属线路层117;Forming a plurality of first metal wiring layers 116 and a plurality of second metal wiring layers 117 on the second surface 102 of the substrate 100;
将磁感应传感器41安装在基板100的第二表面102,磁感应传感器41的第三外接焊盘402通过第三金属连接结构111与互连线路(第一金属线路层116)电连接;The magnetic induction sensor 41 is mounted on the second surface 102 of the substrate 100, and the third external contact pad 402 of the magnetic induction sensor 41 is electrically connected to the interconnection (the first metal wiring layer 116) through the third metal connection structure 111;
将数据处理芯片501倒装在基板100的第二表面102,数据处理芯片501与互连线路(第三互连线路124、第四互连线路125、第一金属线路层116和第二金属线路层117)电连接;The data processing chip 501 is flip-chip mounted on the second surface 102 of the substrate 100, the data processing chip 501 and the interconnection (the third interconnection 124, the fourth interconnection 125, the first metal wiring layer 116, and the second metal wiring) Layer 117) electrical connection;
在第二金属线路层117的表面形成焊接凸起115。Solder bumps 115 are formed on the surface of the second metal wiring layer 117.
所述数据处理芯片501用于对陀螺仪传感器21、加速度传感器31和磁感应传感器41感应的信号进行处理,并可以将处理后的信号通过焊接凸起115传输给其他的芯片或电路,所述数据处理芯片501中形成有信号处理电路(未示出),所述数据处理芯片501的表面具有与信号处理电路的电连接的若干输入焊盘503和输出焊盘502,输入焊盘503与相应的第三互连线路124、第四互连线路125、第一金属线路层116电连接,输出焊盘502与第二金属线路层117电连接。在具体的实施例中,数据处理芯片501的部分输入焊盘503通过第三互连线路124、第一金属连接结构109和第一外接焊盘202与陀螺仪传感器21电连接,数据处理芯片501的部分输入焊盘503通过第四互连线路125、第二金属连接结构108、第二外接焊盘302与加速度传感器31电连接,数据处理芯片501的部分输入焊盘503通过第一金属线路层116、第三金属连接结构111、第三外接焊盘402与磁感应传感器电连接。The data processing chip 501 is configured to process signals induced by the gyro sensor 21, the acceleration sensor 31, and the magnetic induction sensor 41, and transmit the processed signals to other chips or circuits through the solder bumps 115, the data. A processing circuit (not shown) is formed in the processing chip 501, the surface of the data processing chip 501 having a plurality of input pads 503 and output pads 502 electrically connected to the signal processing circuit, the input pads 503 and corresponding The third interconnect line 124, the fourth interconnect line 125, the first metal line layer 116 are electrically connected, and the output pad 502 is electrically connected to the second metal line layer 117. In a specific embodiment, a portion of the input pads 503 of the data processing chip 501 are electrically coupled to the gyro sensor 21 via a third interconnect 124, a first metal connection 109, and a first external pad 202. The data processing chip 501 The portion of the input pad 503 is electrically connected to the acceleration sensor 31 through the fourth interconnection 125, the second metal connection 108, and the second external pad 302. A portion of the input pad 503 of the data processing chip 501 passes through the first metal circuit layer. 116. The third metal connection structure 111 and the third external connection pad 402 are electrically connected to the magnetic induction sensor.
所述信号处理芯片501还可以通过焊接凸起115、第二金属线路层117和输出焊盘502接收外部的信号,并通过输入焊盘503传递出相应的控制信号给陀螺仪传感器21、加速度传感器31和磁感应传感器41。The signal processing chip 501 can also receive an external signal through the solder bump 115, the second metal wiring layer 117, and the output pad 502, and transmit a corresponding control signal to the gyro sensor 21 and the acceleration sensor through the input pad 503. 31 and magnetic induction sensor 41.
所述陀螺仪传感器21包括正面和相对的背面,所述第一外接焊盘202 位于陀螺仪传感器21的正面,所述加速度传感器31包括正面和相对的背面,所述第二外接焊盘302位于加速度传感器21的正面,所述磁感应传感器41包括正面和相对的背面,所述第三外接焊盘402位于磁感应传感器41的正面。The gyro sensor 21 includes a front surface and an opposite back surface, the first external pad 202 is located on the front surface of the gyro sensor 21, the acceleration sensor 31 includes a front surface and an opposite back surface, and the second external contact pad 302 is located On the front side of the acceleration sensor 21, the magnetic induction sensor 41 includes a front surface and an opposite back surface, and the third external contact pad 402 is located on the front surface of the magnetic induction sensor 41.
本实施例中,所述陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101,第一金属连接结构109和第二金属连接结构108为金属线,第一金属连接结构109的两端分别与第一外接焊盘202和第三互连线路124电连接,第一金属连接结构109的中间部分悬空在陀螺仪传感器21两侧,第二金属连接结构108的两端分别与第二外接焊盘302和第四互连线路125电连接,第二金属连接结构108的中间部分悬空在加速度传感器31两侧。In this embodiment, the back surface of the gyro sensor 21 and the acceleration sensor 31 are adhered to the first surface 101 of the substrate 100. The first metal connection structure 109 and the second metal connection structure 108 are metal lines, and the first metal connection structure 109 The two ends are electrically connected to the first external pad 202 and the third interconnection 124, respectively, and the middle portion of the first metal connection structure 109 is suspended on both sides of the gyro sensor 21, and the two ends of the second metal connection structure 108 are respectively The second outer pad 302 and the fourth interconnecting line 125 are electrically connected, and the middle portion of the second metal connecting structure 108 is suspended on both sides of the acceleration sensor 31.
所述金属线(第一金属连接结构109和第二金属连接结构108)的形成工艺为引线键合,在形成金属线后,还包括,形成至少密封所述金属线的点胶层。The forming process of the metal wires (the first metal connecting structure 109 and the second metal connecting structure 108) is wire bonding, and after forming the metal wires, further comprising forming a dispensing layer that at least seals the metal wires.
在另一实施例中,请参考图23,所述陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101,所述第一金属连接结构109贯穿陀螺仪传感器31的背面和部分厚度,并与陀螺仪传感器21正面的第一外接焊盘202电连接,所述第二金属连接结构108贯穿加速度传感器31的背面与和部分厚度,并与加速度传感器31正面的第二外接焊盘302电连接。In another embodiment, referring to FIG. 23, the gyro sensor 21 and the acceleration sensor 31 are back-attached to the first surface 101 of the substrate 100, and the first metal connection structure 109 penetrates the back surface of the gyro sensor 31 and Partially thicknessed and electrically connected to the first outer pad 202 on the front side of the gyro sensor 21, the second metal connection structure 108 penetrating the back surface and the partial thickness of the acceleration sensor 31, and the second external soldering of the front surface of the acceleration sensor 31 The disk 302 is electrically connected.
在另一实施例中,所述第一金属连接结构位于第一外接焊盘的表面,第二金属连接结构位于第二外接焊盘的表面,所述陀螺仪传感器和加速度传感器分别倒装在基板的第一表面上(类似于图17所示的连接方式)。In another embodiment, the first metal connection structure is located on a surface of the first external connection pad, the second metal connection structure is located on a surface of the second external connection pad, and the gyro sensor and the acceleration sensor are respectively flipped on the substrate On the first surface (similar to the connection shown in Figure 17).
所述第三金属连接结构111位于第三外接焊盘402的表面,所述磁感应传感器41倒装在基板100的第二表面102上。The third metal connection structure 111 is located on the surface of the third external pad 402, and the magnetic induction sensor 41 is flipped on the second surface 102 of the substrate 100.
在另一实施例中,所述磁感应传感器40背面贴合于基板100的第二表面102,第三金属连接结构为金属线,第三金属连接结构的两端分别与第 三外接焊盘和金属线路层电连接,第三金属连接结构的中间部分悬空在磁感应传感器两侧(类似图20和图21所示的连接方式)。In another embodiment, the back side of the magnetic induction sensor 40 is attached to the second surface 102 of the substrate 100. The third metal connection structure is a metal line, and the two ends of the third metal connection structure are respectively connected with the third external connection pad and the metal. The circuit layers are electrically connected, and the middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor (similar to the connection manner shown in FIGS. 20 and 21).
在另一实施例中,所述磁感应传感器41背面贴合于基板100的第二表面102,所述第三金属连接结构贯穿磁感应传感器的背面和部分厚度,并与磁感应传感器正面的第三外接焊盘电连接(类似图20和图21所示的连接方式)。In another embodiment, the back surface of the magnetic induction sensor 41 is adhered to the second surface 102 of the substrate 100. The third metal connection structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor, and is connected to the third external connection of the front surface of the magnetic induction sensor. Disk connection (similar to the connection shown in Figure 20 and Figure 21).
第一金属线路层116和若干第二金属线路层117的形成工艺和相关限定请参考前述实施例中金属线路层的形成工艺和相关限定,在此不再赘述。For the formation process and related definitions of the first metal circuit layer 116 and the plurality of second metal circuit layers 117, refer to the formation process and related definitions of the metal circuit layer in the foregoing embodiments, and details are not described herein again.
本发明实施例还提供了一种MEMS传感器封装结构,请参考图22,包括:The embodiment of the invention further provides a MEMS sensor package structure. Referring to FIG. 22, the method includes:
基板100,所述基板100包括第一表面101和相对的第二表面102,所述基板100具有互连线路,互连线路包括位于基板100中的第三互连线路124和第四互连线路125、以及位于基板100的第二表面102上的若干第一金属线路层116和若干第二金属线路层117;a substrate 100 including a first surface 101 having an interconnecting line and an opposite second surface 102, the interconnecting line including a third interconnecting line 124 and a fourth interconnecting line in the substrate 100 125, and a plurality of first metal circuit layers 116 and a plurality of second metal circuit layers 117 on the second surface 102 of the substrate 100;
陀螺仪传感器21、加速度传感器31和磁感应传感器41,所述陀螺仪传感器21包括若干第一外接焊盘202,所述加速度传感器31包括若干第二外接焊盘302,所述磁感应传感器41包括若干第三外接焊盘402;a gyro sensor 21, an acceleration sensor 31 and a magnetic induction sensor 41, the gyro sensor 21 includes a plurality of first external pads 202, the acceleration sensor 31 includes a plurality of second external pads 302, and the magnetic induction sensor 41 includes a plurality of Three external pads 402;
陀螺仪传感器21和加速度传感器31安装在基板100的第一表面101,陀螺仪传感器11的第一外接焊盘202通过第一金属连接结构109与互连线路(第三互连线路124)电连接,加速度传感器31的第二外接焊盘302通过第二金属连接结构108与互连线路(第四互连线路125)电连接;The gyro sensor 21 and the acceleration sensor 31 are mounted on the first surface 101 of the substrate 100, and the first external pad 202 of the gyro sensor 11 is electrically connected to the interconnection (third interconnection 124) through the first metal connection structure 109. The second external pad 302 of the acceleration sensor 31 is electrically connected to the interconnection (fourth interconnection 125) through the second metal connection structure 108;
磁感应传感器41安装在基板100的第二表面102,磁感应传感器41的第三外接焊盘402通过第三金属连接结构111与互连线路(第一金属线路层116)电连接;The magnetic induction sensor 41 is mounted on the second surface 102 of the substrate 100, and the third external contact pad 402 of the magnetic induction sensor 41 is electrically connected to the interconnection (the first metal wiring layer 116) through the third metal connection structure 111;
数据处理芯片501倒装在基板100的第二表面102,数据处理芯片401与互连线路(第三互连线路124、第四互连线路125、第一金属线路层116和第二金属线路层117)电连接;The data processing chip 501 is flip-chip mounted on the second surface 102 of the substrate 100, the data processing chip 401 and the interconnection (the third interconnection 124, the fourth interconnection 125, the first metal wiring layer 116, and the second metal wiring layer). 117) electrical connection;
位于基板100的第二表面上的焊接凸起115,焊接凸起115与第二金属线路层117电连接。A solder bump 115 on the second surface of the substrate 100, the solder bump 115 is electrically connected to the second metal wiring layer 117.
所述陀螺仪传感器21包括正面和相对的背面,所述第一外接焊盘202位于陀螺仪传感器21的正面,所述加速度传感器31包括正面和相对的背面,所述第二外接焊盘302位于加速度传感器21的正面,所述磁感应传感器41包括正面和相对的背面,所述第三外接焊盘402位于磁感应传感器41的正面。The gyro sensor 21 includes a front surface and an opposite back surface, the first external pad 202 is located on the front surface of the gyro sensor 21, the acceleration sensor 31 includes a front surface and an opposite back surface, and the second external contact pad 302 is located On the front side of the acceleration sensor 21, the magnetic induction sensor 41 includes a front surface and an opposite back surface, and the third external contact pad 402 is located on the front surface of the magnetic induction sensor 41.
本实施例中,所述陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101,第一金属连接结构109和第二金属连接结构108为金属线,第一金属连接结构109的两端分别与第一外接焊盘202和第三互连线路124电连接,第一金属连接结构109的中间部分悬空在陀螺仪传感器21两侧,第二金属连接结构108的两端分别与第二外接焊盘302和第四互连线路125电连接,第二金属连接结构108的中间部分悬空在加速度传感器31两侧。In this embodiment, the back surface of the gyro sensor 21 and the acceleration sensor 31 are adhered to the first surface 101 of the substrate 100. The first metal connection structure 109 and the second metal connection structure 108 are metal lines, and the first metal connection structure 109 The two ends are electrically connected to the first external pad 202 and the third interconnection 124, respectively, and the middle portion of the first metal connection structure 109 is suspended on both sides of the gyro sensor 21, and the two ends of the second metal connection structure 108 are respectively The second outer pad 302 and the fourth interconnecting line 125 are electrically connected, and the middle portion of the second metal connecting structure 108 is suspended on both sides of the acceleration sensor 31.
在另一实施例中,请参考图23,所述陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101,所述第一金属连接结构109贯穿陀螺仪传感器31的背面和部分厚度,并与陀螺仪传感器21正面的第一外接焊盘202电连接,所述第二金属连接结构108贯穿加速度传感器31的背面与和部分厚度,并与加速度传感器31正面的第二外接焊盘302电连接。In another embodiment, referring to FIG. 23, the gyro sensor 21 and the acceleration sensor 31 are back-attached to the first surface 101 of the substrate 100, and the first metal connection structure 109 penetrates the back surface of the gyro sensor 31 and Partially thicknessed and electrically connected to the first outer pad 202 on the front side of the gyro sensor 21, the second metal connection structure 108 penetrating the back surface and the partial thickness of the acceleration sensor 31, and the second external soldering of the front surface of the acceleration sensor 31 The disk 302 is electrically connected.
在另一实施例中,所述第一金属连接结构位于第一外接焊盘的表面,第二金属连接结构位于第二外接焊盘的表面,所述陀螺仪传感器和加速度传感器分别倒装在基板的第一表面上(类似于图17所示的连接方式)。In another embodiment, the first metal connection structure is located on a surface of the first external connection pad, the second metal connection structure is located on a surface of the second external connection pad, and the gyro sensor and the acceleration sensor are respectively flipped on the substrate On the first surface (similar to the connection shown in Figure 17).
所述第三金属连接结构111位于第三外接焊盘402的表面,所述磁感应传感器41倒装在基板100的第二表面102上。The third metal connection structure 111 is located on the surface of the third external pad 402, and the magnetic induction sensor 41 is flipped on the second surface 102 of the substrate 100.
在另一实施例中,所述磁感应传感器背面贴合于基板的第二表面,第三金属连接结构为金属线,第三金属连接结构的两端分别与第三外接焊盘 和金属线路层电连接,第三金属连接结构的中间部分悬空在磁感应传感器两侧(类似图20和图21所示的连接方式)。In another embodiment, the back side of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure is a metal line, and the two ends of the third metal connection structure are respectively electrically connected to the third external connection pad and the metal circuit layer. Connected, the middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor (similar to the connection shown in Figures 20 and 21).
在另一实施例中,所述磁感应传感器背面贴合于基板的第二表面,所述第三金属连接结构贯穿磁感应传感器的背面和部分厚度,并与磁感应传感器正面的第三外接焊盘电连接(类似图20和图21所示的连接方式)。In another embodiment, the back of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor, and is electrically connected to the third external pad of the front surface of the magnetic induction sensor. (Like the connection method shown in Fig. 20 and Fig. 21).
所述陀螺仪传感器21包括正面和相对的背面,所述第一外接焊盘202位于陀螺仪传感器21的正面,所述加速度传感器31包括正面和相对的背面,所述第二外接焊盘302位于加速度传感器21的正面,所述磁感应传感器41包括正面和相对的背面,所述第三外接焊盘402位于磁感应传感器41的正面。The gyro sensor 21 includes a front surface and an opposite back surface, the first external pad 202 is located on the front surface of the gyro sensor 21, the acceleration sensor 31 includes a front surface and an opposite back surface, and the second external contact pad 302 is located On the front side of the acceleration sensor 21, the magnetic induction sensor 41 includes a front surface and an opposite back surface, and the third external contact pad 402 is located on the front surface of the magnetic induction sensor 41.
本实施例中,所述陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101,第一金属连接结构109和第二金属连接结构108为金属线,第一金属连接结构109的两端分别与第一外接焊盘202和第三互连线路124电连接,第一金属连接结构109的中间部分悬空在陀螺仪传感器21两侧,第二金属连接结构108的两端分别与第二外接焊盘302和第四互连线路125电连接,第二金属连接结构108的中间部分悬空在加速度传感器31两侧。In this embodiment, the back surface of the gyro sensor 21 and the acceleration sensor 31 are adhered to the first surface 101 of the substrate 100. The first metal connection structure 109 and the second metal connection structure 108 are metal lines, and the first metal connection structure 109 The two ends are electrically connected to the first external pad 202 and the third interconnection 124, respectively, and the middle portion of the first metal connection structure 109 is suspended on both sides of the gyro sensor 21, and the two ends of the second metal connection structure 108 are respectively The second outer pad 302 and the fourth interconnecting line 125 are electrically connected, and the middle portion of the second metal connecting structure 108 is suspended on both sides of the acceleration sensor 31.
在另一实施例中,请参考图23,所述陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101,所述第一金属连接结构109贯穿陀螺仪传感器31的背面和部分厚度,并与陀螺仪传感器21正面的第一外接焊盘202电连接,所述第二金属连接结构108贯穿加速度传感器31的背面与和部分厚度,并与加速度传感器31正面的第二外接焊盘302电连接。In another embodiment, referring to FIG. 23, the gyro sensor 21 and the acceleration sensor 31 are back-attached to the first surface 101 of the substrate 100, and the first metal connection structure 109 penetrates the back surface of the gyro sensor 31 and Partially thicknessed and electrically connected to the first outer pad 202 on the front side of the gyro sensor 21, the second metal connection structure 108 penetrating the back surface and the partial thickness of the acceleration sensor 31, and the second external soldering of the front surface of the acceleration sensor 31 The disk 302 is electrically connected.
在另一实施例中,所述第一金属连接结构位于第一外接焊盘的表面,第二金属连接结构位于第二外接焊盘的表面,所述陀螺仪传感器和加速度传感器分别倒装在基板的第一表面上(类似于图17所示的连接方式)。In another embodiment, the first metal connection structure is located on a surface of the first external connection pad, the second metal connection structure is located on a surface of the second external connection pad, and the gyro sensor and the acceleration sensor are respectively flipped on the substrate On the first surface (similar to the connection shown in Figure 17).
所述第三金属连接结构111位于第三外接焊盘402的表面,所述磁感 应传感器41倒装在基板100的第二表面102上。The third metal connection structure 111 is located on the surface of the third external pad 402, and the magnetic induction sensor 41 is flipped on the second surface 102 of the substrate 100.
在另一实施例中,所述磁感应传感器背面贴合于基板的第二表面,第三金属连接结构为金属线,第三金属连接结构的两端分别与第三外接焊盘和金属线路层电连接,第三金属连接结构的中间部分悬空在磁感应传感器两侧(类似图20和图21所示的连接方式)。In another embodiment, the back side of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure is a metal line, and the two ends of the third metal connection structure are respectively electrically connected to the third external connection pad and the metal circuit layer. Connected, the middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor (similar to the connection shown in Figures 20 and 21).
在另一实施例中,所述磁感应传感器背面贴合于基板的第二表面,所述第三金属连接结构贯穿磁感应传感器的背面和部分厚度,并与磁感应传感器正面的第三外接焊盘电连接(类似图20和图21所示的连接方式)。In another embodiment, the back of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor, and is electrically connected to the third external pad of the front surface of the magnetic induction sensor. (Like the connection method shown in Fig. 20 and Fig. 21).
所述数据处理芯片501的表面具有若干输入焊盘503和输出焊盘502,输入焊盘503与相应的第三互连线路124、第四互连线路125、第一金属线路层116电连接,输出焊盘502与第二金属线路层117电连接。The surface of the data processing chip 501 has a plurality of input pads 503 and output pads 502. The input pads 503 are electrically connected to the corresponding third interconnecting lines 124, fourth interconnecting lines 125, and first metal wiring layer 116. The output pad 502 is electrically connected to the second metal wiring layer 117.
第六实施例Sixth embodiment
图24-图25为本发明第六实施例MEMS传感器封装结构形成过程的结构示意图。24 to FIG. 25 are structural diagrams showing a process of forming a MEMS sensor package structure according to a sixth embodiment of the present invention.
本实施例与第五实施例的区别在于,数据处理芯片501与陀螺仪传感器21和加速度传感器31均封装与基板100的第一表面101上,而磁感应传感器41封装在基板100的第二表面102上,在实现一个数据处理芯片501与陀螺仪传感器21、加速度传感器31和磁感应传感器41的集成封装,减小了封装结构的体积,并且所述数据处理芯片501能对陀螺仪传感器21、加速度传感器31和磁感应传感器41感应的信号进行处理,并将处理后的信号从焊接凸起传输,同时由于数据处理芯片501与陀螺仪传感器21和加速度传感器31均封装与基板100的第一表面101上,而磁感应传感器41封装在基板100的第二表面上,更利于基板100的第二表面102上形成的焊接凸起的布局。需要说明的是,本实施例中与前述实施例中相同或相似的结构、相同或相似的连接方式的限定或描述,请参考前述实施例中相应的结构、相应的连接方式的限定或描述,本实施例中不再赘述。The difference between this embodiment and the fifth embodiment is that the data processing chip 501 and the gyro sensor 21 and the acceleration sensor 31 are both packaged on the first surface 101 of the substrate 100, and the magnetic induction sensor 41 is packaged on the second surface 102 of the substrate 100. In the above, an integrated package of the data processing chip 501 and the gyro sensor 21, the acceleration sensor 31 and the magnetic induction sensor 41 is realized, the volume of the package structure is reduced, and the data processing chip 501 can be used for the gyro sensor 21 and the acceleration sensor. 31 and the signal induced by the magnetic induction sensor 41 are processed, and the processed signal is transmitted from the solder bump, and since the data processing chip 501 and the gyro sensor 21 and the acceleration sensor 31 are both packaged on the first surface 101 of the substrate 100, The magnetic induction sensor 41 is packaged on the second surface of the substrate 100 to facilitate the layout of the solder bumps formed on the second surface 102 of the substrate 100. It should be noted that, in the present embodiment, the definitions or descriptions of the same or similar structures, the same or similar connection manners in the foregoing embodiments, refer to the corresponding structures in the foregoing embodiments, the definitions or descriptions of the corresponding connection manners, This embodiment will not be described again.
参考图24,提供基板100,所述基板100包括第一表面101和相对的 第二表面1021,所述基板100具有互连线路;本实施例中所述互连线路包括位于基板100中的第五互连线路120和第六互连线路119,以及位于基板100的第一表面101形成的若干第三金属线路层122和若干第四金属线路层123;Referring to FIG. 24, a substrate 100 is provided, which includes a first surface 101 and an opposite second surface 1021, the substrate 100 having interconnection lines; in the embodiment, the interconnection line includes a portion located in the substrate 100. a fifth interconnecting line 120 and a sixth interconnecting line 119, and a plurality of third metal wiring layers 122 and a plurality of fourth metal wiring layers 123 formed on the first surface 101 of the substrate 100;
提供陀螺仪传感器21、加速度传感器31和磁感应传感器41,所述陀螺仪传感器21包括若干第一外接焊盘202,所述加速度传感器31包括若干第二外接焊盘302,所述磁感应传感器41包括若干第三外接焊盘402;A gyro sensor 21, an acceleration sensor 31 and a magnetic induction sensor 41 are provided. The gyro sensor 21 includes a plurality of first external pads 202, the acceleration sensor 31 includes a plurality of second external pads 302, and the magnetic induction sensor 41 includes a plurality of a third external pad 402;
将陀螺仪传感器21和加速度传感器31分别安装在基板100的第一表面101,陀螺仪传感器21的第一外接焊盘202通过第一金属连接结构109与互连线路(第三金属线路层122)电连接,加速度传感器31的第二外接焊盘302通过第二金属连接结构108与互连线路(第四金属线路层123)电连接;The gyro sensor 21 and the acceleration sensor 31 are respectively mounted on the first surface 101 of the substrate 100, and the first external pad 202 of the gyro sensor 21 passes through the first metal connection structure 109 and the interconnection (third metal wiring layer 122) Electrically connected, the second external pad 302 of the acceleration sensor 31 is electrically connected to the interconnection (fourth metal circuit layer 123) through the second metal connection structure 108;
将磁感应传感器41安装在基板100的第二表面102,磁感应传感器41的第三外接焊盘402通过第三金属连接结构111与互连线路(第五互连线路120)电连接;The magnetic induction sensor 41 is mounted on the second surface 102 of the substrate 100, and the third external contact pad 402 of the magnetic induction sensor 41 is electrically connected to the interconnection (the fifth interconnection 120) through the third metal connection structure 111;
将数据处理芯片501倒装在基板100的第一表面101,数据处理芯片501与互连线路(第三金属线路层122、第四金属线路层123、第五互连线路120和第六互连线路119)电连接;The data processing chip 501 is flip-chip mounted on the first surface 101 of the substrate 100, the data processing chip 501 and the interconnection (the third metal wiring layer 122, the fourth metal wiring layer 123, the fifth interconnection 120, and the sixth interconnection) Line 119) electrical connection;
所述互连线路还包括位于基板100的第二表面102上的若干第五金属线路层121,在基板100的第二表面102上形成若干第五金属线路层121,第五金属线路层121与第六互连线路119电连接;The interconnection further includes a plurality of fifth metal wiring layers 121 on the second surface 102 of the substrate 100, and a plurality of fifth metal wiring layers 121 are formed on the second surface 102 of the substrate 100, and the fifth metal wiring layer 121 is The sixth interconnection 119 is electrically connected;
在第五金属线路层121的表面形成焊接凸起118。Solder bumps 118 are formed on the surface of the fifth metal wiring layer 121.
所述陀螺仪传感器21包括正面和相对的背面,所述第一外接焊盘202位于陀螺仪传感器21的正面,所述加速度传感器31包括正面和相对的背面,所述第二外接焊盘302位于加速度传感器31的正面,所述磁感应传感器41包括正面和相对的背面,所述第三外接焊盘402位于磁感应传感器41的正面。The gyro sensor 21 includes a front surface and an opposite back surface, the first external pad 202 is located on the front surface of the gyro sensor 21, the acceleration sensor 31 includes a front surface and an opposite back surface, and the second external contact pad 302 is located On the front side of the acceleration sensor 31, the magnetic induction sensor 41 includes a front surface and an opposite back surface, and the third external contact pad 402 is located on the front surface of the magnetic induction sensor 41.
本实施例中,所述陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101,第一金属连接结构109和第二金属连接结构108为金属线,第一金属连接结构109的两端分别与第一外接焊盘202和第三金属线路层122电连接,第一金属连接结构109的中间部分悬空在陀螺仪传感器21两侧,第二金属连接结构108的两端分别与第二外接焊盘302和第四金属线路层123电连接,第二金属连接结构109的中间部分悬空在加速度传感器31两侧。In this embodiment, the back surface of the gyro sensor 21 and the acceleration sensor 31 are adhered to the first surface 101 of the substrate 100. The first metal connection structure 109 and the second metal connection structure 108 are metal lines, and the first metal connection structure 109 The two ends are electrically connected to the first external pad 202 and the third metal circuit layer 122, respectively, and the middle portion of the first metal connection structure 109 is suspended on both sides of the gyro sensor 21, and the two ends of the second metal connection structure 108 are respectively The second outer pad 302 and the fourth metal wiring layer 123 are electrically connected, and the intermediate portion of the second metal connecting structure 109 is suspended on both sides of the acceleration sensor 31.
在一实施例中,陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101以及数据处理芯片501倒装在基板100的第一表面101之后,还包括:形成至少包覆所述金属线(第一金属连接结构109和第二金属连接结构108)的点胶层。在一实施例中,所述点胶层除了覆盖第一金属连接结构109和第二金属连接结构108外,还覆盖陀螺仪传感器21、加速度传感器31、数据处理芯片501以及第一基板100的第一表面,且点胶层具有平坦的上表面,使得点胶层可以作为平台,便于后续在基板100的第二表面进行安装磁感应传感器41和形成焊接凸起118等工艺步骤。在一实施例中,点胶层的材料为树脂(胶),形成工艺为点胶工艺、注塑工艺或转塑工艺。In an embodiment, after the gyro sensor 21 and the acceleration sensor 31 are attached to the first surface 101 of the substrate 100 and the data processing chip 501 is flipped over the first surface 101 of the substrate 100, the method further includes: forming at least a coating A dispensing layer of metal wires (first metal connection structure 109 and second metal connection structure 108). In an embodiment, the dispensing layer covers the gyro sensor 21, the acceleration sensor 31, the data processing chip 501, and the first substrate 100 in addition to the first metal connection structure 109 and the second metal connection structure 108. A surface, and the dispensing layer has a flat upper surface, such that the dispensing layer can serve as a platform for facilitating subsequent processing steps of mounting the magnetic induction sensor 41 and forming the solder bumps 118 on the second surface of the substrate 100. In one embodiment, the material of the dispensing layer is a resin (glue), and the forming process is a dispensing process, an injection molding process, or a transformation process.
在另一实施例中,请参考图25,所述陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101,所述第一金属连接结构106的一端贯穿陀螺仪传感器21的背面和部分厚度,并与陀螺仪传感器21正面的第一外接焊盘202电连接,第一金属连接结构106另一端与第三金属线路层122电连接,所述第二金属连接结构306的一端贯穿加速度传感器31的背面与和部分厚度,并与加速度传感器31正面的第二外接焊盘302电连接,所述第二金属连接结构306的另一端与第四金属线路层电连接。In another embodiment, referring to FIG. 25, the back surface of the gyro sensor 21 and the acceleration sensor 31 are attached to the first surface 101 of the substrate 100, and one end of the first metal connection structure 106 runs through the gyro sensor 21. The back surface and a portion of the thickness are electrically connected to the first external pad 202 on the front surface of the gyro sensor 21, and the other end of the first metal connection structure 106 is electrically connected to the third metal circuit layer 122, and one end of the second metal connection structure 306 The back surface and the partial thickness of the acceleration sensor 31 are electrically connected to the second outer contact pad 302 on the front surface of the acceleration sensor 31, and the other end of the second metal connection structure 306 is electrically connected to the fourth metal circuit layer.
在另一实施例中,所述第一金属连接结构位于第一外接焊盘的表面,第二金属连接结构位于第二外接焊盘的表面,所述陀螺仪传感器和加速度传感器分别倒装在基板的第一表面上,第一金属连接结构和第二金属连接结构分别与第三金属线路层和第四金属线路层电连接。In another embodiment, the first metal connection structure is located on a surface of the first external connection pad, the second metal connection structure is located on a surface of the second external connection pad, and the gyro sensor and the acceleration sensor are respectively flipped on the substrate The first metal connection structure and the second metal connection structure are electrically connected to the third metal circuit layer and the fourth metal circuit layer, respectively.
本实施例中,所述第三金属连接结构111位于第三外接焊盘402的表面,所述磁感应传感器41倒装在基板400的第二表面102上。In this embodiment, the third metal connection structure 111 is located on the surface of the third external contact pad 402, and the magnetic induction sensor 41 is flipped on the second surface 102 of the substrate 400.
在另一实施例中,所述磁感应传感器背面贴合于基板的第二表面,第三金属连接结构为金属线,第三金属连接结构的两端分别与第三外接焊盘和第五互连线路连接,第三金属连接结构的中间部分悬空在磁感应传感器两侧。In another embodiment, the back side of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure is a metal line, and the two ends of the third metal connection structure are respectively connected to the third external pad and the fifth interconnection. The line connection, the middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor.
在另一实施例中,所述磁感应传感器背面贴合于基板的第二表面,所述第三金属连接结构的一端贯穿磁感应传感器的背面和部分厚度,并与磁感应传感器正面的第三外接焊盘电连接,另一端与第五互连线路电连接。In another embodiment, the back of the magnetic induction sensor is attached to the second surface of the substrate, and one end of the third metal connection structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor, and the third external pad of the front surface of the magnetic induction sensor The other end is electrically connected to the fifth interconnecting line.
请继续参考图24,所述数据处理芯片501包括若干输入焊盘503和输出焊盘502,输入焊盘503与相应的第三金属线122、第四金属线路层123、第五互连线路120电连接,输出焊盘502与第六互连线路电连接。With continued reference to FIG. 24, the data processing chip 501 includes a plurality of input pads 503 and output pads 502, and input pads 503 and corresponding third metal lines 122, fourth metal line layers 123, and fifth interconnect lines 120. Electrically connected, the output pad 502 is electrically coupled to the sixth interconnect.
在一实施例中,在基板100的第一表面101上形成第三金属线路层122和第四金属线路层123时,可以将第一表面101上还形成第四部分金属线路层和第五部分金属线路层,第四部分金属线路层与第五互连线路120电连接,第五部分金属线路层与第六互连线路119电连接。In an embodiment, when the third metal wiring layer 122 and the fourth metal wiring layer 123 are formed on the first surface 101 of the substrate 100, the fourth portion of the metal wiring layer and the fifth portion may be further formed on the first surface 101. The metal wiring layer, the fourth partial metal wiring layer is electrically connected to the fifth interconnection line 120, and the fifth partial metal wiring layer is electrically connected to the sixth interconnection line 119.
需要说明的是,第三金属线122、第四金属线路层123、第五金属线路层121的形成工艺和相关限定请参考前述实施例中金属线路层的形成工艺和相关限定,在此不再赘述。It should be noted that, for the formation process and related definitions of the third metal line 122, the fourth metal circuit layer 123, and the fifth metal circuit layer 121, refer to the formation process and related definitions of the metal circuit layer in the foregoing embodiments, and no longer Narration.
本实施例中还提供了一种MEMS传感器封装结构,请参考图23,包括:A MEMS sensor package structure is also provided in this embodiment. Referring to FIG. 23, the method includes:
基板100,所述基板10包括第一表面101和相对的第二表面102,所述基板100具有互连线路,所述互连线路包括位于基板100中的第五互连线路120和第六互连线路119,以及位于基板100的第一表面101的若干第三金属线路层122和若干第四金属线路层123;a substrate 100 including a first surface 101 having an interconnection line and an opposite second surface 102, the interconnection line including a fifth interconnection line 120 and a sixth interconnection located in the substrate 100 Connecting lines 119, and a plurality of third metal circuit layers 122 and a plurality of fourth metal circuit layers 123 on the first surface 101 of the substrate 100;
陀螺仪传感器21、加速度传感器31和磁感应传感器41,所述陀螺仪传感器21包括若干第一外接焊盘202,所述加速度传感器31包括若干第 二外接焊盘302,所述磁感应传感器41包括若干第三外接焊盘402;a gyro sensor 21, an acceleration sensor 31 and a magnetic induction sensor 41, the gyro sensor 21 includes a plurality of first external pads 202, the acceleration sensor 31 includes a plurality of second external pads 302, and the magnetic induction sensor 41 includes a plurality of Three external pads 402;
陀螺仪传感器21和加速度传感器31分别安装在基板100的第一表面101,陀螺仪传感器21的第一外接焊盘202通过第一金属连接结构109与互连线路(第三金属线路层122)电连接,加速度传感器31的第二外接焊盘302通过第二金属连接结108构与互连线路(第四金属线路层123)电连接;The gyro sensor 21 and the acceleration sensor 31 are respectively mounted on the first surface 101 of the substrate 100, and the first external pad 202 of the gyro sensor 21 is electrically connected to the interconnection (third metal wiring layer 122) through the first metal connection structure 109. Connecting, the second external pad 302 of the acceleration sensor 31 is electrically connected to the interconnection (fourth metal circuit layer 123) through the second metal connection 108;
磁感应传感器41安装在基板100的第二表面102,磁感应传感器41的第三外接402焊盘通过第三金属连接结构111与互连线路(第五互连线路120)电连接;The magnetic induction sensor 41 is mounted on the second surface 102 of the substrate 100, and the third external connection 402 of the magnetic induction sensor 41 is electrically connected to the interconnection (the fifth interconnection 120) through the third metal connection structure 111;
数据处理芯片501倒装在基板100的第一表面101,数据处理芯片501与互连线路(第三金属线路层122、第四金属线路层123、第五互连线路120和第六互连线路119)电连接;The data processing chip 501 is flip-chip mounted on the first surface 101 of the substrate 100, the data processing chip 501 and the interconnection (the third metal wiring layer 122, the fourth metal wiring layer 123, the fifth interconnection 120, and the sixth interconnection) 119) electrical connection;
所述互连线路还包括位于基板100的第二表面102上的若干第五金属线路层121,第五金属线路层121与第六互连线路119电连接;The interconnection further includes a plurality of fifth metal circuit layers 121 on the second surface 102 of the substrate 100, the fifth metal circuit layer 121 being electrically connected to the sixth interconnection 119;
位于第五金属线路层121的表面的焊接凸起118。A solder bump 118 on the surface of the fifth metal wiring layer 121.
所述陀螺仪传感器21包括正面和相对的背面,所述第一外接焊盘202位于陀螺仪传感器21的正面,所述加速度传感器31包括正面和相对的背面,所述第二外接焊盘302位于加速度传感器31的正面,所述磁感应传感器41包括正面和相对的背面,所述第三外接焊盘402位于磁感应传感器41的正面。The gyro sensor 21 includes a front surface and an opposite back surface, the first external pad 202 is located on the front surface of the gyro sensor 21, the acceleration sensor 31 includes a front surface and an opposite back surface, and the second external contact pad 302 is located On the front side of the acceleration sensor 31, the magnetic induction sensor 41 includes a front surface and an opposite back surface, and the third external contact pad 402 is located on the front surface of the magnetic induction sensor 41.
本实施例中,所述陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101,第一金属连接结构109和第二金属连接结构108为金属线,第一金属连接结构109的两端分别与第一外接焊盘202和第三金属线路层122电连接,第一金属连接结构109的中间部分悬空在陀螺仪传感器21两侧,第二金属连接结构108的两端分别与第二外接焊盘302和第四金属线路层123电连接,第二金属连接结构109的中间部分悬空在加速度传感器31两侧。In this embodiment, the back surface of the gyro sensor 21 and the acceleration sensor 31 are adhered to the first surface 101 of the substrate 100. The first metal connection structure 109 and the second metal connection structure 108 are metal lines, and the first metal connection structure 109 The two ends are electrically connected to the first external pad 202 and the third metal circuit layer 122, respectively, and the middle portion of the first metal connection structure 109 is suspended on both sides of the gyro sensor 21, and the two ends of the second metal connection structure 108 are respectively The second outer pad 302 and the fourth metal wiring layer 123 are electrically connected, and the intermediate portion of the second metal connecting structure 109 is suspended on both sides of the acceleration sensor 31.
在另一实施例中,请参考图25,所述陀螺仪传感器21和加速度传感器31背面贴合于基板100的第一表面101,所述第一金属连接结构106的一端贯穿陀螺仪传感器21的背面和部分厚度,并与陀螺仪传感器21正面的第一外接焊盘202电连接,第一金属连接结构106另一端与第三金属线路层122电连接,所述第二金属连接结构306的一端贯穿加速度传感器31的背面与和部分厚度,并与加速度传感器31正面的第二外接焊盘302电连接,所述第二金属连接结构306的另一端与第四金属线路层电连接。In another embodiment, referring to FIG. 25, the back surface of the gyro sensor 21 and the acceleration sensor 31 are attached to the first surface 101 of the substrate 100, and one end of the first metal connection structure 106 runs through the gyro sensor 21. The back surface and a portion of the thickness are electrically connected to the first external pad 202 on the front surface of the gyro sensor 21, and the other end of the first metal connection structure 106 is electrically connected to the third metal circuit layer 122, and one end of the second metal connection structure 306 The back surface and the partial thickness of the acceleration sensor 31 are electrically connected to the second outer contact pad 302 on the front surface of the acceleration sensor 31, and the other end of the second metal connection structure 306 is electrically connected to the fourth metal circuit layer.
在另一实施例中,所述第一金属连接结构位于第一外接焊盘的表面,第二金属连接结构位于第二外接焊盘的表面,所述陀螺仪传感器和加速度传感器分别倒装在基板的第一表面上,第一金属连接结构和第二金属连接结构分别与第三金属线路层和第四金属线路层电连接。In another embodiment, the first metal connection structure is located on a surface of the first external connection pad, the second metal connection structure is located on a surface of the second external connection pad, and the gyro sensor and the acceleration sensor are respectively flipped on the substrate The first metal connection structure and the second metal connection structure are electrically connected to the third metal circuit layer and the fourth metal circuit layer, respectively.
本实施例中,所述第三金属连接结构111位于第三外接焊盘402的表面,所述磁感应传感器41倒装在基板400的第二表面102上。In this embodiment, the third metal connection structure 111 is located on the surface of the third external contact pad 402, and the magnetic induction sensor 41 is flipped on the second surface 102 of the substrate 400.
在另一实施例中,所述磁感应传感器背面贴合于基板的第二表面,第三金属连接结构为金属线,第三金属连接结构的两端分别与第三外接焊盘和第五互连线路连接,第三金属连接结构的中间部分悬空在磁感应传感器两侧。In another embodiment, the back side of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure is a metal line, and the two ends of the third metal connection structure are respectively connected to the third external pad and the fifth interconnection. The line connection, the middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor.
在另一实施例中,所述磁感应传感器背面贴合于基板的第二表面,所述第三金属连接结构的一端贯穿磁感应传感器的背面和部分厚度,并与磁感应传感器正面的第三外接焊盘电连接,另一端与第五互连线路电连接。In another embodiment, the back of the magnetic induction sensor is attached to the second surface of the substrate, and one end of the third metal connection structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor, and the third external pad of the front surface of the magnetic induction sensor The other end is electrically connected to the fifth interconnecting line.
请继续参考图24,所述数据处理芯片501包括若干输入焊盘503和输出焊盘502,输入焊盘503与相应的第三金属线122、第四金属线路层123、第五互连线路120电连接,输出焊盘502与第六互连线路电连接。With continued reference to FIG. 24, the data processing chip 501 includes a plurality of input pads 503 and output pads 502, and input pads 503 and corresponding third metal lines 122, fourth metal line layers 123, and fifth interconnect lines 120. Electrically connected, the output pad 502 is electrically coupled to the sixth interconnect.
第七实施例Seventh embodiment
图26-图37为本发明第七实施例MEMS传感器封装结构形成过程的结构示意图。26 to FIG. 37 are structural diagrams showing a process of forming a MEMS sensor package structure according to a seventh embodiment of the present invention.
本实施例与第四、五实施例的区别在于,本实施例中实现陀螺仪传感 器模块61、加速度传感器模块71、和磁感应传感器模块81的集成封装,减小了封装结构的体积,并且第一数据处理芯片,第二数据处理芯片和第三数据处理芯片可以单独对对应的陀螺仪传感器、加速度传感器、和磁感应传感器感应的信号进行处理,提高了处理的效率,并将处理后的信号通过第一焊接凸起、第二焊接凸起和第三焊接凸起输出。需要说明的是,本实施例中与前述实施例中相同或相似的结构、相同或相似的连接方式的限定或描述,请参考前述实施例中相应的结构、相应的连接方式的限定或描述,本实施例中不再赘述。The difference between the embodiment and the fourth and fifth embodiments is that the integrated package of the gyro sensor module 61, the acceleration sensor module 71, and the magnetic induction sensor module 81 is implemented in the embodiment, which reduces the volume of the package structure, and is first The data processing chip, the second data processing chip and the third data processing chip can separately process the signals sensed by the corresponding gyro sensor, the acceleration sensor, and the magnetic induction sensor, thereby improving the processing efficiency and passing the processed signal through the first A solder bump, a second solder bump, and a third solder bump output. It should be noted that, in the present embodiment, the definitions or descriptions of the same or similar structures, the same or similar connection manners in the foregoing embodiments, refer to the corresponding structures in the foregoing embodiments, the definitions or descriptions of the corresponding connection manners, This embodiment will not be described again.
参考图26、图27和图28,提供陀螺仪传感器模块61、加速度传感器模块71和磁感应传感器模块81,所述陀螺仪传感器模块61包括陀螺仪传感器21和与陀螺仪传感器21电连接的第一数据处理芯片601以及第一外接焊盘206,所述加速度传感器模块71包括加速度传感器31和与加速度传感器31电连接的第二数据处理芯片701以及第二外接焊盘306,所述磁感应传感器模块81包括磁感应传感器41与磁感应传感器41电连接的第三数据处理芯片801以及第三外接焊盘805。Referring to FIGS. 26, 27, and 28, a gyro sensor module 61, an acceleration sensor module 71, and a magnetic induction sensor module 81 are provided, the gyro sensor module 61 including a gyro sensor 21 and a first electrical connection with the gyro sensor 21 The data processing chip 601 and the first external pad 206, the acceleration sensor module 71 includes an acceleration sensor 31 and a second data processing chip 701 and a second external pad 306 electrically connected to the acceleration sensor 31, the magnetic induction sensor module 81 The third data processing chip 801 and the third external pad 805 are electrically connected to the magnetic induction sensor 41 and the magnetic induction sensor 41.
请参考图26,所述陀螺仪传感器21包括正面和相对的背面,陀螺仪传感器21的正面具有若干第一内部焊盘205和第一外接焊盘206,第一数据处理芯片601位于陀螺仪传感器21的正面上,第一数据处理芯片601与第一内部焊盘205和第一外接焊盘206电连接,所述加速度传感器31包括正面和相对的背面。Referring to FIG. 26, the gyro sensor 21 includes a front surface and an opposite back surface. The front surface of the gyro sensor 21 has a plurality of first inner pads 205 and first outer pads 206. The first data processing chip 601 is located at the gyro sensor. On the front side of the 21, the first data processing chip 601 is electrically connected to the first inner pad 205 and the first outer pad 206, and the acceleration sensor 31 includes a front side and an opposite back side.
所述第一内部焊盘205位于角速度感应区201周围,所述角速度感应区201用于感应物体的加速度,产生电信号,所述第一内部焊盘205作为陀螺仪传感器21与第一数据处理芯片601进行电信号传递的电连接点。The first internal pad 205 is located around the angular velocity sensing area 201 for sensing the acceleration of the object to generate an electrical signal. The first internal pad 205 acts as the gyro sensor 21 and the first data processing. The chip 601 performs an electrical connection point for electrical signal transmission.
所述第一内部焊盘205的数量为多个(大于等于2个),部分第一内部焊盘可以传输感应的电信号,部分第一内部焊盘可以接受外部的控制信号或者电源信号。The number of the first internal pads 205 is plural (two or more), some of the first internal pads may transmit induced electrical signals, and some of the first internal pads may receive external control signals or power signals.
第一外接焊盘206适于将陀螺仪传感器模块61处理后的信号传递出,并可以接收外部的控制信号等,所述第一外接焊盘206位于第一内部焊盘 205的周围,便于陀螺仪传感器模块61与基板中的第一互连线路电连接。在一实施例中,所述第一外接焊盘206与第一数据处理芯片601电连接。在另一实施例中,部分第一外接焊盘206与第一数据处理芯片601电连接,部分第一外接焊盘206可以与第一内部焊盘205电连接The first external pad 206 is adapted to transmit the processed signal of the gyro sensor module 61 and can receive an external control signal or the like. The first external pad 206 is located around the first internal pad 205 for facilitating the gyro. The meter sensor module 61 is electrically coupled to a first interconnect in the substrate. In an embodiment, the first external pad 206 is electrically connected to the first data processing chip 601. In another embodiment, a portion of the first external pads 206 are electrically connected to the first data processing chip 601, and a portion of the first external pads 206 are electrically connected to the first internal pads 205.
所述第一数据处理芯片601用于对陀螺仪传感器21感应的电信号进行处理,第一数据处理芯片601中形成有信号处理电路(未示出),所述第一数据处理芯片601的表面具有与信号处理电路的电连接的若干输入焊盘603和输出焊盘602,输入焊盘603与相应的陀螺仪传感器21的第一内部焊盘205电连接,输出焊盘502与第一外接焊盘206电连接。The first data processing chip 601 is configured to process an electrical signal induced by the gyro sensor 21, and a signal processing circuit (not shown) is formed in the first data processing chip 601, and a surface of the first data processing chip 601 is formed. A plurality of input pads 603 and output pads 602 having electrical connections to signal processing circuits, the input pads 603 being electrically coupled to the first internal pads 205 of the respective gyro sensors 21, the output pads 502 being coupled to the first external solder The disk 206 is electrically connected.
所述第一数据处理芯片601包括正面和相对的背面,输入焊盘603和输出焊盘602位于第一数据处理芯片601的正面,第一数据处理芯片601的输入焊盘603通过第四金属连接结构604与第一内部焊盘205电连接,第一数据处理芯片601的输出焊盘602通过第五金属连接结构605与第一外接焊盘206电连接,使得第一数据处理芯片601可以通过输入焊盘603通过第四金属连接结构604与第一内部焊盘205接收陀螺仪传感器21感应的电信号,并通过输出焊盘602、第五金属连接结构605与第一外接焊盘206输出处理后的电信号。The first data processing chip 601 includes a front side and an opposite back side. The input pad 603 and the output pad 602 are located on the front side of the first data processing chip 601, and the input pad 603 of the first data processing chip 601 is connected through the fourth metal. The structure 604 is electrically connected to the first internal pad 205, and the output pad 602 of the first data processing chip 601 is electrically connected to the first external pad 206 through the fifth metal connection structure 605, so that the first data processing chip 601 can pass the input. The pad 603 receives the electrical signal induced by the gyro sensor 21 through the fourth metal connection structure 604 and the first internal pad 205, and outputs the processed signal through the output pad 602, the fifth metal connection structure 605 and the first external pad 206. Electrical signal.
本实施例中,所述第一数据处理芯片601的背面贴合于陀螺仪传感器21的正面,第四金属连接结构604和第五金属连接结构605为金属线,第四金属连接结构604和第五金属连接结构605的中间部分悬空在第一数据处理芯片601的两侧,第四金属连接结构604的两端分别与第一数据处理芯片601的输入焊盘603与第一内部焊盘205电连接,第五金属连接结构605的两端分别与第一数据处理芯片601的输出焊盘602与第一外接焊盘206电连接。本实施例中,通过第一数据处理芯片601背面贴合于陀螺仪传感器21的正面,将陀螺仪传感器21的角速度感应区201密封,无需额外在陀螺仪传感器21的正面上形成密封盖,在节省制作成本的同时,实现对陀螺仪传感器21的感应信号进行处理和对角速度感应区201的密封。In this embodiment, the back surface of the first data processing chip 601 is attached to the front surface of the gyro sensor 21, and the fourth metal connection structure 604 and the fifth metal connection structure 605 are metal wires, and the fourth metal connection structure 604 and the The intermediate portion of the five metal connection structure 605 is suspended on both sides of the first data processing chip 601, and both ends of the fourth metal connection structure 604 are electrically connected to the input pad 603 and the first internal pad 205 of the first data processing chip 601, respectively. The two ends of the fifth metal connection structure 605 are electrically connected to the output pad 602 of the first data processing chip 601 and the first external pad 206, respectively. In this embodiment, the back surface of the first data processing chip 601 is attached to the front surface of the gyro sensor 21, and the angular velocity sensing area 201 of the gyro sensor 21 is sealed, so that it is not necessary to additionally form a sealing cover on the front surface of the gyro sensor 21. While the manufacturing cost is saved, the sensing signal of the gyro sensor 21 and the sealing of the angular velocity sensing area 201 are realized.
参考图27,所述加速度传感器31包括正面和相对的背面,加速度传 感器31的正面具有若干第二内部焊盘305和第二外接焊盘306,第二数据处理芯片701位于加速度传感器31的正面,第二数据处理芯片701与第二内部焊盘305和第二外接焊盘306电连接。Referring to FIG. 27, the acceleration sensor 31 includes a front surface and an opposite back surface, and the front surface of the acceleration sensor 31 has a plurality of second inner pads 305 and second outer pads 306, and the second data processing chip 701 is located on the front surface of the acceleration sensor 31. The second data processing chip 701 is electrically connected to the second internal pad 305 and the second external pad 306.
所述第二内部焊盘305位于加速度感应区301周围,所述加速度感应区301用于感应物体的加速度,产生电信号,所述第二内部焊盘305作为加速度传感器31与第二数据处理芯片701进行电信号传递的电连接点。The second internal pad 305 is located around the acceleration sensing area 301 for sensing the acceleration of the object to generate an electrical signal, and the second internal pad 305 is used as the acceleration sensor 31 and the second data processing chip. 701 is an electrical connection point for electrical signal transmission.
所述第二内部焊盘305的数量为多个(大于等于2个),部分第二内部焊盘可以传输感应的电信号,部分第二内部焊盘可以接受外部的控制信号或者电源信号。The number of the second internal pads 305 is plural (two or more), some of the second internal pads may transmit induced electrical signals, and some of the second internal pads may receive external control signals or power signals.
第二外接焊盘306适于将加速度传感器模块71处理后的信号传递出,并可以接收外部的控制信号等,所述第二外接焊盘306位于第二内部焊盘305的周围,便于加速度传感器模块71与基板100中的第一互连线路电连接。在一实施例中,所述第二外接焊盘306与第二数据处理芯片701电连接。在另一实施例中,部分第二外接焊盘306与第二数据处理芯片701电连接,部分第二外接焊盘306可以与第二内部焊盘305电连接The second external pad 306 is adapted to transmit the signal processed by the acceleration sensor module 71 and can receive an external control signal or the like. The second external pad 306 is located around the second internal pad 305 for the acceleration sensor. Module 71 is electrically coupled to a first interconnect in substrate 100. In an embodiment, the second external pad 306 is electrically connected to the second data processing chip 701. In another embodiment, a portion of the second external pads 306 are electrically coupled to the second data processing chip 701, and a portion of the second external pads 306 are electrically coupled to the second internal pads 305.
所述第二数据处理芯片701用于对加速度传感器31感应的电信号进行处理,第二数据处理芯片701中形成有信号处理电路(未示出),所述第二数据处理芯片701的表面具有与信号处理电路的电连接的若干输入焊盘703和输出焊盘702,输入焊盘703与相应的加速度传感器31的第二内部焊盘305电连接,输出焊盘502与第二外接焊盘306电连接。The second data processing chip 701 is configured to process an electrical signal induced by the acceleration sensor 31, and a signal processing circuit (not shown) is formed in the second data processing chip 701. The surface of the second data processing chip 701 has a surface. A plurality of input pads 703 and output pads 702 electrically connected to the signal processing circuit, the input pads 703 being electrically connected to the second internal pads 305 of the corresponding acceleration sensors 31, the output pads 502 and the second external pads 306 Electrical connection.
所述第二数据处理芯片701包括正面和相对的背面,输入焊盘703和输出焊盘702位于第二数据处理芯片701的正面,第二数据处理芯片701的输入焊盘703通过第六金属连接结构704与第二内部焊盘305电连接,第二数据处理芯片701的输出焊盘702通过第七金属连接结构705与第二外接焊盘306电连接,使得第二数据处理芯片701可以通过输入焊盘703通过第六金属连接结构704与第二内部焊盘305接收加速度传感器31感应的电信号,并通过输出焊盘702、第七金属连接结构705与第二外接焊盘306输出处理后的电信号。The second data processing chip 701 includes a front side and an opposite back side, the input pad 703 and the output pad 702 are located on the front side of the second data processing chip 701, and the input pad 703 of the second data processing chip 701 is connected through the sixth metal. The structure 704 is electrically connected to the second internal pad 305, and the output pad 702 of the second data processing chip 701 is electrically connected to the second external pad 306 through the seventh metal connection structure 705, so that the second data processing chip 701 can pass the input. The pad 703 receives the electrical signal induced by the acceleration sensor 31 through the sixth metal connection structure 704 and the second internal pad 305, and outputs the processed signal through the output pad 702, the seventh metal connection structure 705 and the second external connection pad 306. electric signal.
本实施例中,所述第二数据处理芯片701的背面贴合于加速度传感器31的正面,第六金属连接结构704和第七金属连接结构705为金属线,第六金属连接结构704和第七金属连接结构705的中间部分悬空在第二数据处理芯片701的两侧,第六金属连接结构704的两端分别与第二数据处理芯片701的输入焊盘703与第二内部焊盘305电连接,第七金属连接结构705的两端分别与第二数据处理芯片701的输出焊盘702与第二外接焊盘306电连接。本实施例中,通过第二数据处理芯片701背面贴合于加速度传感器31的正面,将加速度传感器31的加速度感应区301密封,无需额外在加速度传感器31的正面上形成密封盖,在节省制作成本的同时,实现对加速度传感器31的感应信号进行处理和对加速度感应区301的密封。In this embodiment, the back surface of the second data processing chip 701 is attached to the front surface of the acceleration sensor 31, and the sixth metal connection structure 704 and the seventh metal connection structure 705 are metal lines, and the sixth metal connection structure 704 and the seventh. The middle portion of the metal connection structure 705 is suspended on both sides of the second data processing chip 701, and the two ends of the sixth metal connection structure 704 are electrically connected to the input pad 703 of the second data processing chip 701 and the second internal pad 305, respectively. The two ends of the seventh metal connection structure 705 are electrically connected to the output pad 702 and the second external pad 306 of the second data processing chip 701, respectively. In this embodiment, the back surface of the second data processing chip 701 is attached to the front surface of the acceleration sensor 31, and the acceleration sensing area 301 of the acceleration sensor 31 is sealed, so that it is not necessary to additionally form a sealing cover on the front surface of the acceleration sensor 31, thereby saving manufacturing costs. At the same time, the sensing signal of the acceleration sensor 31 and the sealing of the acceleration sensing area 301 are realized.
参考图28,所述磁感应传感器41包括正面和相对的背面,磁感应传感器41的正面具有若干第三内部焊盘405和第三外接焊盘406,第三数据处理芯片801位于磁感应传感器41的正面,第三数据处理芯片801与第三内部焊盘405和第三外接焊盘406电连接。Referring to FIG. 28, the magnetic induction sensor 41 includes a front surface and an opposite back surface. The front surface of the magnetic induction sensor 41 has a plurality of third inner pads 405 and third outer pads 406. The third data processing chip 801 is located on the front surface of the magnetic induction sensor 41. The third data processing chip 801 is electrically connected to the third inner pad 405 and the third outer pad 406.
所述第三内部焊盘405位于磁感应感应区401周围,所述磁感应感应区401用于感应物体的磁感应,产生电信号,所述第三内部焊盘405作为磁感应传感器41与第三数据处理芯片801进行电信号传递的电连接点。The third internal pad 405 is located around the magnetic induction sensing area 401 for sensing magnetic induction of an object to generate an electrical signal, and the third internal pad 405 functions as a magnetic induction sensor 41 and a third data processing chip. 801 is an electrical connection point for electrical signal transmission.
所述第三内部焊盘405的数量为多个(大于等于2个),部分第三内部焊盘可以传输感应的电信号,部分第三内部焊盘可以接受外部的控制信号或者电源信号。The number of the third internal pads 405 is plural (two or more), some of the third internal pads may transmit induced electrical signals, and some of the third internal pads may receive external control signals or power signals.
第三外接焊盘406适于将磁感应传感器模块81处理后的信号传递出,并可以接收外部的控制信号等,所述第三外接焊盘406位于第三内部焊盘405的周围,便于磁感应传感器模块81与基板100中的第一互连线路电连接。在一实施例中,所述第三外接焊盘406与第三数据处理芯片801电连接。在另一实施例中,部分第三外接焊盘406与第三数据处理芯片801电连接,部分第三外接焊盘406可以与第三内部焊盘405电连接The third external pad 406 is adapted to transmit the processed signal of the magnetic induction sensor module 81 and can receive an external control signal or the like. The third external pad 406 is located around the third internal pad 405 for facilitating the magnetic induction sensor. Module 81 is electrically coupled to a first interconnect in substrate 100. In an embodiment, the third external pad 406 is electrically connected to the third data processing chip 801. In another embodiment, a portion of the third external pads 406 are electrically coupled to the third data processing chip 801, and a portion of the third external pads 406 are electrically coupled to the third internal pads 405.
所述第三数据处理芯片801用于对磁感应传感器41感应的电信号进行处理,第三数据处理芯片801中形成有信号处理电路(未示出),所述第三 数据处理芯片801的表面具有与信号处理电路的电连接的若干输入焊盘803和输出焊盘802,输入焊盘803与相应的磁感应传感器41的第三内部焊盘405电连接,输出焊盘502与第三外接焊盘406电连接。The third data processing chip 801 is configured to process an electrical signal induced by the magnetic induction sensor 41, and a signal processing circuit (not shown) is formed in the third data processing chip 801. The surface of the third data processing chip 801 has a surface. A plurality of input pads 803 and output pads 802 electrically connected to the signal processing circuit, the input pads 803 being electrically connected to the third internal pads 405 of the corresponding magnetic induction sensors 41, the output pads 502 and the third external pads 406 Electrical connection.
所述第三数据处理芯片801包括正面和相对的背面,输入焊盘803和输出焊盘802位于第三数据处理芯片801的正面,第三数据处理芯片801的输入焊盘803通过第八金属连接结构804与第三内部焊盘405电连接,第三数据处理芯片801的输出焊盘802通过第九金属连接结构705与第三外接焊盘406电连接,使得第三数据处理芯片801可以通过输入焊盘803通过第八金属连接结构804与第三内部焊盘405接收磁感应传感器41感应的电信号,并通过输出焊盘802、第九金属连接结构705与第三外接焊盘406输出处理后的电信号。The third data processing chip 801 includes a front side and an opposite back side, the input pad 803 and the output pad 802 are located on the front side of the third data processing chip 801, and the input pad 803 of the third data processing chip 801 is connected through the eighth metal. The structure 804 is electrically connected to the third internal pad 405, and the output pad 802 of the third data processing chip 801 is electrically connected to the third external pad 406 through the ninth metal connection structure 705, so that the third data processing chip 801 can pass the input. The pad 803 receives the electrical signal induced by the magnetic induction sensor 41 through the eighth metal connection structure 804 and the third internal pad 405, and outputs the processed signal through the output pad 802, the ninth metal connection structure 705 and the third external connection pad 406. electric signal.
本实施例中,所述第三数据处理芯片801的背面贴合于磁感应传感器41的正面,第八金属连接结构804和第九金属连接结构705为金属线,第八金属连接结构804和第九金属连接结构705的中间部分悬空在第三数据处理芯片801的两侧,第八金属连接结构804的两端分别与第三数据处理芯片801的输入焊盘803与第三内部焊盘405电连接,第九金属连接结构705的两端分别与第三数据处理芯片801的输出焊盘802与第三外接焊盘406电连接。本实施例中,通过第三数据处理芯片801背面贴合于磁感应传感器41的正面,将磁感应传感器41的磁场感应区401密封,无需额外在磁感应传感器41的正面上形成密封盖,在节省制作成本的同时,实现对磁感应传感器41的感应信号进行处理和对磁场感应区401的密封。In this embodiment, the back surface of the third data processing chip 801 is attached to the front surface of the magnetic induction sensor 41, and the eighth metal connection structure 804 and the ninth metal connection structure 705 are metal wires, and the eighth metal connection structure 804 and the ninth The intermediate portion of the metal connection structure 705 is suspended on both sides of the third data processing chip 801, and the two ends of the eighth metal connection structure 804 are electrically connected to the input pad 803 of the third data processing chip 801 and the third internal pad 405, respectively. The two ends of the ninth metal connection structure 705 are electrically connected to the output pad 802 and the third external pad 406 of the third data processing chip 801, respectively. In this embodiment, the back surface of the third data processing chip 801 is attached to the front surface of the magnetic induction sensor 41, and the magnetic field sensing area 401 of the magnetic induction sensor 41 is sealed, so that it is not necessary to additionally form a sealing cover on the front surface of the magnetic induction sensor 41, thereby saving manufacturing costs. At the same time, the sensing signal of the magnetic induction sensor 41 and the sealing of the magnetic field sensing region 401 are realized.
在另一实施例中,请参考图29,所述第一数据处理芯片601的背面贴合于陀螺仪传感器21的正面,第四金属连接结构606一端贯穿第一数据处理芯片601的背面和部分厚度,并与第一数据处理芯片601正面的输入焊盘603电连接,第四金属连接结构606的另一端与第一内部焊盘205电连接,第五金属连接结构607的一端贯穿第一数据处理芯片601的背面和部分厚度,并与第一数据处理芯片601正面的输出焊盘602电连接,第五金属连接结构607的一端的另一端与第一外接焊盘206。In another embodiment, referring to FIG. 29, the back surface of the first data processing chip 601 is attached to the front surface of the gyro sensor 21, and the fourth metal connection structure 606 has one end running through the back and the portion of the first data processing chip 601. The thickness is electrically connected to the input pad 603 on the front side of the first data processing chip 601, the other end of the fourth metal connection structure 606 is electrically connected to the first internal pad 205, and one end of the fifth metal connection structure 607 runs through the first data. The back surface and a portion of the thickness of the chip 601 are processed and electrically connected to the output pad 602 on the front side of the first data processing chip 601, and the other end of the fifth metal connection structure 607 is connected to the first external pad 206.
所述陀螺仪传感器21中还形成有第一金属连接结构207,所述第一金属连接结构207贯穿陀螺仪传感器21的背面和部分厚度,并与陀螺仪传感器21正面的第一外接焊盘206电连接。Also formed in the gyro sensor 21 is a first metal connection structure 207 that penetrates the back surface and a portion of the thickness of the gyro sensor 21 and the first external contact pad 206 on the front side of the gyro sensor 21 Electrical connection.
在一实施例中,所述第一数据处理芯片601的背面形成有凹槽608,所述第一数据处理芯片601的背面贴合于陀螺仪传感器21的正面时,凹槽608位于角速度感应区201上方,因而在陀螺仪传感器21的形成过程中可以不形成密封角速度感应区201的密封盖,直接将第一数据处理芯片601作为密封盖,在节省制作成本的同时,实现对第一数据处理芯片601的感应信号进行处理和对角速度感应区201的密封。In an embodiment, the back surface of the first data processing chip 601 is formed with a groove 608. When the back surface of the first data processing chip 601 is attached to the front surface of the gyro sensor 21, the groove 608 is located at the angular velocity sensing area. Above the 201, the sealing cover of the sealing angular velocity sensing area 201 may not be formed during the formation of the gyro sensor 21, and the first data processing chip 601 is directly used as the sealing cover, thereby saving the manufacturing cost and realizing the first data processing. The sensing signal of the chip 601 is processed and sealed against the angular velocity sensing area 201.
在另一实施例中,请参考图30,第二数据处理芯片701的背面贴合于加速度传感器的正面,第六金属连接结构706的一端贯穿第二数据处理芯片701的背面和部分厚度,并与第二数据处理芯片701正面的输入焊盘703电连接,第六金属连接结构706的另一端与第二内部焊盘305电连接,第七金属连接结构707的一端贯穿第二数据处理芯片701的背面和部分厚度,并与第二数据处理芯片701正面的输出焊盘702电连接,第七金属连接结构707的一端与第二外接焊盘307电连接。In another embodiment, referring to FIG. 30, the back surface of the second data processing chip 701 is attached to the front surface of the acceleration sensor, and one end of the sixth metal connection structure 706 penetrates the back surface and a portion of the thickness of the second data processing chip 701, and The other end of the sixth metal connection structure 706 is electrically connected to the second internal pad 305, and the other end of the seventh metal connection structure 707 penetrates the second data processing chip 701. The back side and part of the thickness are electrically connected to the output pad 702 on the front side of the second data processing chip 701, and one end of the seventh metal connection structure 707 is electrically connected to the second external pad 307.
所述加速度传感器31中形成有第二金属连接结构307,所述第二金属连接结构307贯穿加速度传感器31的背面与和部分厚度,并与加速度传感器31正面的第二外接焊盘306电连接。A second metal connection structure 307 is formed in the acceleration sensor 31. The second metal connection structure 307 penetrates the back surface and the partial thickness of the acceleration sensor 31, and is electrically connected to the second external connection pad 306 on the front surface of the acceleration sensor 31.
在一实施例中,所述第二数据处理芯片的背面形成有凹槽(可以是类似于图29中第一数据处理芯片601的背面形成有凹槽608的方式),所述第二数据处理芯片的背面贴合于加速度传感器的正面时,凹槽位于加速度感应区上方,因而在加速度传感器制作过程中可以不形成密封加速度感应区的密封盖,直接将第二数据处理芯片作为密封盖,在节省制作成本的同时,实现对加速度传感器的感应信号进行处理和对加速度感应区的密封。In an embodiment, a back surface of the second data processing chip is formed with a groove (may be similar to the manner in which the back surface of the first data processing chip 601 in FIG. 29 is formed with a groove 608), and the second data processing When the back side of the chip is attached to the front surface of the acceleration sensor, the groove is located above the acceleration sensing area, so that the sealing cover of the sealed acceleration sensing area may not be formed during the manufacturing process of the acceleration sensor, and the second data processing chip is directly used as the sealing cover. While saving the manufacturing cost, the sensing signal of the acceleration sensor is processed and the acceleration sensing area is sealed.
在另一实施例中,请参考图31,第三数据处理芯片801的背面贴合于磁感应传感器41的正面,第八金属连接结构806一端贯穿第三数据处理芯片801的背面和部分厚度,并与第三数据处理芯片801正面的输入焊盘803 电连接,第八金属连接结构806的另一端与第三内部焊盘405电连接,第九金属连接结构807的一端贯穿第三数据处理芯片801的背面和部分厚度,并与第三数据处理芯片正面的输出焊盘电连接,第九金属连接结构807的另一端与第三外接焊盘406电连接。In another embodiment, referring to FIG. 31, the back surface of the third data processing chip 801 is attached to the front surface of the magnetic induction sensor 41, and one end of the eighth metal connection structure 806 penetrates the back surface and a portion of the thickness of the third data processing chip 801, and The other end of the eighth metal connection structure 806 is electrically connected to the third internal pad 405, and the other end of the ninth metal connection structure 807 passes through the third data processing chip 801. The back side and part of the thickness are electrically connected to the output pad on the front side of the third data processing chip, and the other end of the ninth metal connection structure 807 is electrically connected to the third external pad 406.
所述磁感应传感器41中形成有第三金属连接结构407,所述第三金属连接结构407贯穿磁感应传感器41的背面和部分厚度,并与磁感应传感器41正面的第三外接焊盘406电连接。A third metal connection structure 407 is formed in the magnetic induction sensor 41. The third metal connection structure 407 penetrates the back surface and a portion of the thickness of the magnetic induction sensor 41 and is electrically connected to the third external connection pad 406 on the front surface of the magnetic induction sensor 41.
在一实施例中,所述第三数据处理芯片的背面形成有凹槽(可以是类似于图29所述第一数据处理芯片601的背面形成有凹槽608的方式),所述第三数据处理芯片的背面贴合于磁感应传感器的正面时,凹槽位于磁感应区上方,因而在磁感应传感器制作过程中可以不形成密封加速度感应区的密封盖,直接将第三数据处理芯片作为密封盖,在节省制作成本的同时,实现对磁感应传感器的感应信号进行处理和对磁场感应区的密封。In an embodiment, a back surface of the third data processing chip is formed with a groove (may be similar to the manner in which the back surface of the first data processing chip 601 is formed with a groove 608 in FIG. 29), the third data. When the back surface of the processing chip is attached to the front surface of the magnetic induction sensor, the groove is located above the magnetic sensing area, so that the sealing cover of the sealed acceleration sensing area may not be formed during the manufacturing process of the magnetic induction sensor, and the third data processing chip is directly used as the sealing cover. The manufacturing cost of the magnetic induction sensor and the sealing of the magnetic field sensing area are realized while saving the manufacturing cost.
在另一实施例中,请参考图32,第四金属连接结构608位于第一数据处理芯片601的输入焊盘603表面、第五金属连接结构609位于第一数据处理芯片601的输出焊盘602表面,所述第一数据处理芯片601倒装在陀螺仪传感器21的正面上,第四金属连接结构608与第一内部焊盘205电连接,第五金属连接结构609与第一外接焊盘206电连接。In another embodiment, referring to FIG. 32, the fourth metal connection structure 608 is located on the surface of the input pad 603 of the first data processing chip 601, and the fifth metal connection structure 609 is located at the output pad 602 of the first data processing chip 601. The first data processing chip 601 is flipped on the front surface of the gyro sensor 21, and the fourth metal connection structure 608 is electrically connected to the first internal pad 205. The fifth metal connection structure 609 and the first external connection pad 206 are electrically connected. Electrical connection.
在另一实施例中,参考图33,第六金属连接结构708位于第二数据处理芯片701的输入焊盘表面、第七金属连接结构709位于第二数据处理芯片701的输出焊盘702表面,所述第二数据处理芯片701倒装在加速度传感器31的正面上,第六金属连接结构708与第二内部焊盘305电连接,第七金属连接结构709与第二外接焊盘306电连接。In another embodiment, referring to FIG. 33, the sixth metal connection structure 708 is located on the input pad surface of the second data processing chip 701, and the seventh metal connection structure 709 is located on the surface of the output pad 702 of the second data processing chip 701. The second data processing chip 701 is flipped on the front surface of the acceleration sensor 31, the sixth metal connection structure 708 is electrically connected to the second internal pad 305, and the seventh metal connection structure 709 is electrically connected to the second external connection pad 306.
在另一实施例中,参考图34,第八金属连接结构808位于第三数据处理芯片801的输入焊盘803表面、第九金属连接结构809位于第三数据处理芯片801的输出焊盘802表面,所述第三数据处理芯片801倒装在磁感应传感器41的正面上,第八金属连接结构808与第三内部焊盘405电连接,第九金属连接结构809与第六外接406焊盘电连接。In another embodiment, referring to FIG. 34, the eighth metal connection structure 808 is located on the surface of the input pad 803 of the third data processing chip 801, and the ninth metal connection structure 809 is located on the surface of the output pad 802 of the third data processing chip 801. The third data processing chip 801 is flipped on the front surface of the magnetic induction sensor 41, the eighth metal connection structure 808 is electrically connected to the third internal pad 405, and the ninth metal connection structure 809 is electrically connected to the sixth external connection 406 pad. .
参考图35,提供基板100,所述基板100包括第一表面101和相对的第二表面102,所述基板100具有互连线路,本实施例中所述互连线路包括位于基板100中的第一互连线路140和第二互连线路141;Referring to FIG. 35, a substrate 100 is provided. The substrate 100 includes a first surface 101 and an opposite second surface 102. The substrate 100 has interconnection lines. In the embodiment, the interconnection lines include the first substrate 100. An interconnection 140 and a second interconnection 141;
将图26和图27所示的陀螺仪传感器模块61和加速度传感器模块71分别安装在基板100的第一表面101,陀螺仪传感器模块61的第一外接焊盘206通过第一金属连接结构109与互连线路(第一互连线路140)电连接,加速度传感器模块71的第二外接焊盘306通过第二金属连接结构108与互连线路(第二互连线路141)电连接;The gyro sensor module 61 and the acceleration sensor module 71 shown in FIGS. 26 and 27 are respectively mounted on the first surface 101 of the substrate 100, and the first external contact pads 206 of the gyro sensor module 61 pass through the first metal connection structure 109 and The interconnection (the first interconnection 140) is electrically connected, and the second external pad 306 of the acceleration sensor module 71 is electrically connected to the interconnection (the second interconnection 141) through the second metal connection structure 108;
所述互连线路还包括位于基板100的第二表面102上的金属线路层110,在基板100的第二表面102上形成金属线路层110;The interconnection further includes a metal wiring layer 110 on the second surface 102 of the substrate 100, and a metal wiring layer 110 is formed on the second surface 102 of the substrate 100;
将图34所示的磁感应传感器模块81安装在基板100的第二表面102,磁感应传感器模块81的第三外接焊盘406通过第三金属连接结构407与互连线路(金属线路层110)电连接;The magnetic induction sensor module 81 shown in FIG. 34 is mounted on the second surface 102 of the substrate 100, and the third external contact pad 406 of the magnetic induction sensor module 81 is electrically connected to the interconnection (metal wiring layer 110) through the third metal connection structure 407. ;
在基板100的第二表面102形成若干焊接凸起,焊接凸起与互连线路电连接,具体的所述焊接凸起包括第一焊接凸起112、第二焊接凸起114和第三焊接凸起113,第一焊接凸起112与第一互连线路140电连接,第二焊接凸起114与第二互连线路141电连接,第三焊接凸起113与金属线路层110电连接。A plurality of solder bumps are formed on the second surface 102 of the substrate 100, and the solder bumps are electrically connected to the interconnecting lines. Specifically, the solder bumps include a first solder bump 112, a second solder bump 114, and a third solder bump. From 113, the first solder bumps 112 are electrically connected to the first interconnecting lines 140, the second solder bumps 114 are electrically connected to the second interconnecting lines 141, and the third solder bumps 113 are electrically connected to the metal wiring layer 110.
本实施例中,第一金属连接结构109和第二金属连接结构108为金属线,通过引线键合工艺形成。In this embodiment, the first metal connection structure 109 and the second metal connection structure 108 are metal wires formed by a wire bonding process.
在另一实施例中,参考图36,将图29和图30所示的陀螺仪传感器模块61和加速度传感器模块71分别安装在基板100的第一表面101,陀螺仪传感器模块61的第一外接焊盘206通过第一金属连接结构207与第一互连线路140电连接,加速度传感器模块71的第二外接焊盘306通过第二金属连接结构307与第二互连线路141电连接;将图28所示的磁感应传感器模块81安装在基板100的第二表面102,磁感应传感器模块81的第三外接焊盘406通过第三金属连接结构130与金属线路层110电连接。In another embodiment, referring to FIG. 36, the gyro sensor module 61 and the acceleration sensor module 71 shown in FIG. 29 and FIG. 30 are respectively mounted on the first surface 101 of the substrate 100, and the first external connection of the gyro sensor module 61 The pad 206 is electrically connected to the first interconnect line 140 through the first metal connection structure 207, and the second outer contact pad 306 of the acceleration sensor module 71 is electrically connected to the second interconnect line 141 through the second metal connection structure 307; The magnetic induction sensor module 81 shown at 28 is mounted on the second surface 102 of the substrate 100, and the third external contact pad 406 of the magnetic induction sensor module 81 is electrically connected to the metal wiring layer 110 through the third metal connection structure 130.
第三金属连接结构130为金属线,通过引线键合工艺形成,第三金属连接结构130的两端分别与第三外接焊盘和金属线路层电连接,第三金属连接结构130的中间部分悬空在磁感应传感器两侧。The third metal connection structure 130 is a metal wire formed by a wire bonding process. The two ends of the third metal connection structure 130 are electrically connected to the third external pad and the metal circuit layer, respectively, and the middle portion of the third metal connection structure 130 is suspended. On both sides of the magnetic induction sensor.
在另一实施例中,请参考图37,将图32和图33所示的陀螺仪传感器模块61和加速度传感器模块71分别安装在基板100的第一表面101,陀螺仪传感器模块61的第一外接焊盘206通过第一金属连接结构207与第一互连线路140电连接,加速度传感器模块71的第二外接焊盘306通过第二金属连接结构307与第二互连线路141电连接;将图31所示的磁感应传感器模块81安装在基板100的第二表面102,磁感应传感器模块81的第三外接焊盘406通过第三金属连接结构407与金属线路层110电连接。In another embodiment, referring to FIG. 37, the gyro sensor module 61 and the acceleration sensor module 71 shown in FIGS. 32 and 33 are respectively mounted on the first surface 101 of the substrate 100, and the first of the gyro sensor module 61 The external pad 206 is electrically connected to the first interconnection 140 through the first metal connection structure 207, and the second external connection pad 306 of the acceleration sensor module 71 is electrically connected to the second interconnection 141 through the second metal connection structure 307; The magnetic induction sensor module 81 shown in FIG. 31 is mounted on the second surface 102 of the substrate 100, and the third external contact pad 406 of the magnetic induction sensor module 81 is electrically connected to the metal wiring layer 110 through the third metal connection structure 407.
需要说明的是,本实施例中封装结构可以采用图26到图34所示的任意的模块进行组合,实现陀螺仪传感器模块61、加速度传感器模块71、和磁感应传感器模块81的集成封装。It should be noted that, in this embodiment, the package structure can be combined by using any of the modules shown in FIG. 26 to FIG. 34 to implement integrated packaging of the gyro sensor module 61, the acceleration sensor module 71, and the magnetic induction sensor module 81.
本发明实施例还提供了一种MEMS传感器封装结构,请参考图35,包括:The embodiment of the invention further provides a MEMS sensor package structure. Referring to FIG. 35, the method includes:
基板100,所述基板100包括第一表面101和相对的第二表面102,所述基板100具有互连线路,所述互连线路包括位于基板100中的第一互连线路140和第二互连线路141;a substrate 100 including a first surface 101 having an interconnecting line and an opposite second surface 102, the interconnecting line including a first interconnecting line 140 and a second interconnecting layer in the substrate 100 Connecting line 141;
陀螺仪传感器模块61、加速度传感器模块71和磁感应传感器模块81,所述陀螺仪传感器模块61包括陀螺仪传感器21和与陀螺仪传感器21电连接的第一数据处理芯片601以及第一外接焊盘206,所述加速度传感器模块71包括加速度传感器31和与加速度传感器31电连接的第二数据处理芯片701以及第二外接焊盘306,所述磁感应传感器模块81包括磁感应传感器41与磁感应传感器电41连接的第三数据处理芯片801以及第三外接焊盘406;A gyro sensor module 61, an acceleration sensor module 71 and a magnetic induction sensor module 81, the gyro sensor module 61 includes a gyro sensor 21 and a first data processing chip 601 electrically connected to the gyro sensor 21 and a first external pad 206 The acceleration sensor module 71 includes an acceleration sensor 31 and a second data processing chip 701 and a second external pad 306 electrically connected to the acceleration sensor 31. The magnetic induction sensor module 81 includes a magnetic induction sensor 41 connected to the magnetic induction sensor 41. a third data processing chip 801 and a third external pad 406;
陀螺仪传感器模块61和加速度传感器模块71分别安装在基板的第一表面,陀螺仪传感器模块61的第一外接焊盘206通过第一金属连接结构 109与互连线路(第一互连线路140)电连接,加速度传感器模块71的第二外接焊盘306通过第二金属连接结构108与互连线路(第二互连线路141)电连接;The gyro sensor module 61 and the acceleration sensor module 71 are respectively mounted on the first surface of the substrate, and the first external pad 206 of the gyro sensor module 61 passes through the first metal connection structure 109 and the interconnection (the first interconnection 140) Electrically connected, the second external pad 306 of the acceleration sensor module 71 is electrically connected to the interconnection (second interconnection 141) through the second metal connection structure 108;
所述互连线路还包括位于基板100的第二表面102上的金属线路层110;The interconnect line further includes a metal circuit layer 110 on the second surface 102 of the substrate 100;
磁感应传感器模块81安装在基板100的第二表面102,磁感应传感器模块81的第三外接焊盘406通过第三金属连接结构407与互连线路(金属线路层110)电连接;The magnetic induction sensor module 81 is mounted on the second surface 102 of the substrate 100, and the third external connection pad 406 of the magnetic induction sensor module 81 is electrically connected to the interconnection (metal circuit layer 110) through the third metal connection structure 407;
位于基板100的第二表面102上的若干焊接凸起,焊接凸起与互连线路电连接,具体的所述焊接凸起包括第一焊接凸起112、第二焊接凸起114和第三焊接凸起113,第一焊接凸起112与第一互连线路140电连接,第二焊接凸起114与第二互连线路141电连接,第三焊接凸起113与金属线路层110电连接。a plurality of solder bumps on the second surface 102 of the substrate 100, the solder bumps being electrically connected to the interconnect lines, the solder bumps including the first solder bumps 112, the second solder bumps 114, and the third solder The protrusion 113, the first solder bump 112 is electrically connected to the first interconnecting line 140, the second solder bump 114 is electrically connected to the second interconnecting line 141, and the third solder bump 113 is electrically connected to the metal wiring layer 110.
在一实施例中,所述陀螺仪传感器包括正面和相对的背面,陀螺仪传感器的正面具有若干第一内部焊盘和第一外接焊盘,第一数据处理芯片位于陀螺仪传感器的正面上,第一数据处理芯片与第一内部焊盘和第一外接焊盘电连接,所述加速度传感器包括正面和相对的背面,加速度传感器的正面具有若干第二内部焊盘和第二外接焊盘,第二数据处理芯片位于加速度传感器的正面,第二数据处理芯片与第二内部焊盘和第二外接焊盘电连接,所述磁感应传感器包括正面和相对的背面,磁感应传感器的正面具有第三内部焊盘和第三外接焊盘,第三数据处理芯片位于磁感应传感器正面上,第三数据处理芯片与第三内部焊盘和第三外接焊盘电连接。In an embodiment, the gyro sensor includes a front surface and an opposite back surface, the front surface of the gyro sensor has a plurality of first inner pads and a first outer pad, and the first data processing chip is located on the front surface of the gyro sensor. The first data processing chip is electrically connected to the first inner pad and the first outer pad, the acceleration sensor includes a front surface and an opposite back surface, and the front surface of the acceleration sensor has a plurality of second inner pads and second outer pads, The second data processing chip is electrically connected to the front surface of the acceleration sensor, and the second data processing chip is electrically connected to the second inner pad and the second outer pad. The magnetic induction sensor includes a front surface and an opposite back surface, and the front surface of the magnetic induction sensor has a third internal solder. And a third external processing pad, the third data processing chip is located on the front surface of the magnetic induction sensor, and the third data processing chip is electrically connected to the third internal pad and the third external pad.
在一实施例中,所述第一数据处理芯片包括输入焊盘和输出焊盘,第一数据处理芯片的输入焊盘与第一内部焊盘电连接,第一数据处理芯片的输出焊盘与第一外接焊盘电连接,所述第二数据处理芯片包括输入焊盘和输出焊盘,第二数据处理芯片的输入焊盘与第二内部焊盘电连接,第二数据处理芯片的输出焊盘与第二外接焊盘电连接,所述第三数据处理芯片包括输入焊盘和输出焊盘,第三数据处理芯片的输入焊盘与第三内部焊盘电 连接,第三数据处理芯片的输出焊盘与第三外接焊盘电连接。In one embodiment, the first data processing chip includes an input pad and an output pad, and an input pad of the first data processing chip is electrically connected to the first internal pad, and an output pad of the first data processing chip is The first external pad is electrically connected, the second data processing chip includes an input pad and an output pad, the input pad of the second data processing chip is electrically connected to the second internal pad, and the output of the second data processing chip is soldered The disk is electrically connected to the second external processing pad, the third data processing chip includes an input pad and an output pad, and the input pad of the third data processing chip is electrically connected to the third internal pad, and the third data processing chip The output pad is electrically connected to the third external pad.
在一实施例中,所述第一数据处理芯片包括正面和相对的背面,输入焊盘和输出焊盘位于第一数据处理芯片的正面,第一数据处理芯片的输入焊盘通过第四金属连接结构与第一内部焊盘电连接,第一数据处理芯片的输出焊盘通过第五金属连接结构与第一外接焊盘电连接,所述第二数据处理芯片包括正面和相对的背面,输入焊盘和输出焊盘位于第二数据处理芯片的正面,第二数据处理芯片的输入焊盘通过第六金属连接结构与第二内部焊盘电连接,第二数据处理芯片的输出焊盘通过第七金属连接结构与第二外接焊盘电连接,所述第三数据处理芯片包括正面和相对的背面,输入焊盘和输出焊盘位于第三数据处理芯片的正面,第三数据处理芯片的输入焊盘通过第八金属连接结构与第三内部焊盘电连接,第三数据处理芯片的输出焊盘通过第九金属连接结构与第三外接焊盘电连接。In one embodiment, the first data processing chip includes a front side and an opposite back side, the input pad and the output pad are located on a front side of the first data processing chip, and the input pad of the first data processing chip is connected through the fourth metal The structure is electrically connected to the first internal pad, the output pad of the first data processing chip is electrically connected to the first external pad through a fifth metal connection structure, the second data processing chip includes a front surface and an opposite back surface, and the input solder The disk and the output pad are located on the front side of the second data processing chip, the input pad of the second data processing chip is electrically connected to the second internal pad through the sixth metal connection structure, and the output pad of the second data processing chip passes the seventh The metal connection structure is electrically connected to the second external processing pad, the third data processing chip includes a front surface and an opposite back surface, the input pad and the output pad are located on the front side of the third data processing chip, and the input processing of the third data processing chip The disk is electrically connected to the third internal pad through the eighth metal connection structure, and the output pad of the third data processing chip passes through the ninth metal connection structure and Three external pads are electrically connected.
在一实施例中,所述第一数据处理芯片的背面贴合于陀螺仪传感器的正面,第二数据处理芯片的背面贴合于加速度传感器的正面,第三数据处理芯片的背面贴合于磁感应传感器的正面,第四金属连接结构、第五金属连接结构、第六金属连接结构、第七金属连接结构、第八金属连接结构和第九金属连接结构为金属线,第四金属连接结构和第五金属连接结构的中间部分悬空在第一数据处理芯片的两侧,第四金属连接结构的两端分别与第一数据处理芯片的输入焊盘与第一内部焊盘电连接,第五金属连接结构的两端分别与第一数据处理芯片的输出焊盘与第一外接焊盘电连接,第六金属连接结构和第七金属连接结构的中间部分悬空在第二数据处理芯片两侧,第六金属连接结构的两端分别与第二数据处理芯片的输入焊盘与第二内部焊盘电连接,第七金属连接结构分别与第二数据处理芯片的输出焊盘与第二外接焊盘电连接,第七金属连接结构和第八金属连接结构的中间部分悬空在第三数据处理芯片的两侧,第八金属连接结构的两端分别与第三数据处理芯片的输入焊盘与第三内部焊盘电连接,第九金属连接结构的两端分别与第三数据处理芯片的输出焊盘与第三外接焊盘电连接。In one embodiment, the back surface of the first data processing chip is attached to the front surface of the gyro sensor, the back surface of the second data processing chip is attached to the front surface of the acceleration sensor, and the back surface of the third data processing chip is attached to the magnetic sensor. a front surface of the sensor, a fourth metal connection structure, a fifth metal connection structure, a sixth metal connection structure, a seventh metal connection structure, an eighth metal connection structure, and a ninth metal connection structure are metal wires, a fourth metal connection structure, and a The middle portion of the five metal connection structure is suspended on both sides of the first data processing chip, and the two ends of the fourth metal connection structure are electrically connected to the input pad of the first data processing chip and the first internal pad, respectively, and the fifth metal connection The two ends of the structure are electrically connected to the output pads of the first data processing chip and the first external pads, respectively, and the intermediate portions of the sixth metal connection structure and the seventh metal connection structure are suspended on both sides of the second data processing chip, sixth The two ends of the metal connection structure are electrically connected to the input pads of the second data processing chip and the second internal pads, respectively, and the seventh metal connection The output pads of the second data processing chip and the second external pads are respectively electrically connected, and the intermediate portions of the seventh metal connection structure and the eighth metal connection structure are suspended on both sides of the third data processing chip, and the eighth metal connection structure The two ends are electrically connected to the input pad of the third data processing chip and the third internal pad, respectively, and the two ends of the ninth metal connection structure are electrically connected to the output pad of the third data processing chip and the third external pad respectively. .
在一实施例中,所述第一数据处理芯片的背面贴合于陀螺仪传感器的 正面,第二数据处理芯片的背面贴合于加速度传感器的正面,第三数据处理芯片的背面贴合于磁感应传感器的正面,第四金属连接结构贯穿第一数据处理芯片的背面和部分厚度,并与第一数据处理芯片正面的输入焊盘电连接,第五金属连接结构贯穿第一数据处理芯片的背面和部分厚度,并与第一数据处理芯片正面的输出焊盘电连接,第六金属连接结构贯穿第二数据处理芯片的背面和部分厚度,并与第二数据处理芯片正面的输入焊盘电连接,第七金属连接结构贯穿第二数据处理芯片的背面和部分厚度,并与第二数据处理芯片正面的输出焊盘电连接,第八金属连接结构贯穿第三数据处理芯片的背面和部分厚度,并与第三数据处理芯片正面的输入焊盘电连接,第九金属连接结构贯穿第三数据处理芯片的背面和部分厚度,并与第三数据处理芯片正面的输出焊盘电连接。In one embodiment, the back surface of the first data processing chip is attached to the front surface of the gyro sensor, the back surface of the second data processing chip is attached to the front surface of the acceleration sensor, and the back surface of the third data processing chip is attached to the magnetic sensor. a front surface of the sensor, the fourth metal connection structure penetrating the back surface and a portion of the thickness of the first data processing chip, and electrically connected to the input pad of the front surface of the first data processing chip, the fifth metal connection structure penetrating the back surface of the first data processing chip and a portion of the thickness and electrically connected to the output pad on the front side of the first data processing chip, the sixth metal connection structure penetrating through the back surface and a portion of the thickness of the second data processing chip, and electrically connected to the input pad on the front side of the second data processing chip, The seventh metal connection structure penetrates the back surface and the partial thickness of the second data processing chip, and is electrically connected to the output pad of the front surface of the second data processing chip, and the eighth metal connection structure penetrates the back surface and the partial thickness of the third data processing chip, and Electrically connected to the input pad on the front side of the third data processing chip, and the ninth metal connection structure runs through the third The back side and a portion of the thickness of the data processing chip are electrically connected to the output pad on the front side of the third data processing chip.
在一实施例中,所述第一数据处理芯片、第二数据处理芯片和第三数据处理芯片的背面形成凹槽。In an embodiment, the back surfaces of the first data processing chip, the second data processing chip, and the third data processing chip form a recess.
在一实施例中,第四金属连接结构位于第一数据处理芯片的输入焊盘表面、第五金属连接结构位于第一数据处理芯片的输出焊盘表面、第六金属连接结构位于第二数据处理芯片的输入焊盘表面、第七金属连接结构位于第二数据处理芯片的输出焊盘表面、第八金属连接结构位于第三数据处理芯片的输入焊盘表面、第九金属连接结构位于第三数据处理芯片的输出焊盘表面,所述第一数据处理芯片倒装在陀螺仪传感器的正面上,所述第二数据处理芯片倒装在加速度传感器的正面上,所述第三数据处理芯片倒装在磁感应传感器的正面上。In one embodiment, the fourth metal connection structure is located on the input pad surface of the first data processing chip, the fifth metal connection structure is located on the output pad surface of the first data processing chip, and the sixth metal connection structure is located in the second data processing The input pad surface of the chip, the seventh metal connection structure is located on the output pad surface of the second data processing chip, the eighth metal connection structure is located on the input pad surface of the third data processing chip, and the ninth metal connection structure is located in the third data Processing the output pad surface of the chip, the first data processing chip is flipped on the front surface of the gyro sensor, the second data processing chip is flipped on the front surface of the acceleration sensor, and the third data processing chip is flipped On the front side of the magnetic induction sensor.
在一实施例中,所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,第一金属连接结构和第二金属连接结构为金属线,第一金属连接结构的两端分别与第一外接焊盘和第一互连线路电连接,第一金属连接结构的中间部分悬空在陀螺仪传感器两侧,第二金属连接结构的两端分别与第二外接焊盘和第二互连线路电连接,第二金属连接结构的中间部分悬空在加速度传感器两侧。In one embodiment, the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure and the second metal connection structure are metal lines, and the two ends of the first metal connection structure are respectively An external pad is electrically connected to the first interconnecting line, and a middle portion of the first metal connecting structure is suspended on both sides of the gyro sensor, and two ends of the second metal connecting structure are respectively connected to the second external pad and the second interconnecting line Electrically connected, the middle portion of the second metal connection structure is suspended on both sides of the acceleration sensor.
在一实施例中,所述陀螺仪传感器和加速度传感器背面贴合于基板的 第一表面,所述第一金属连接结构贯穿陀螺仪传感器的背面和部分厚度,并与陀螺仪传感器正面的第一外接焊盘电连接,所述第二金属连接结构贯穿加速度传感器的背面与和部分厚度,并与加速度传感器正面的第二外接焊盘电连接。In one embodiment, the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, the first metal connection structure penetrating the back surface and the partial thickness of the gyro sensor, and the first surface of the gyro sensor The external pad is electrically connected, and the second metal connection structure penetrates the back surface and the partial thickness of the acceleration sensor and is electrically connected to the second external pad of the front surface of the acceleration sensor.
在一实施例中,所述磁感应传感器背面贴合于基板的第二表面,第三金属连接结构为金属线,第三金属连接结构的两端分别与第三外接焊盘和金属线路层电连接,第三金属连接结构的中间部分悬空在磁感应传感器两侧。In one embodiment, the back side of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure is a metal line, and the two ends of the third metal connection structure are respectively electrically connected to the third external connection pad and the metal circuit layer. The middle portion of the third metal connection structure is suspended on both sides of the magnetic induction sensor.
在一实施例中,所述磁感应传感器背面贴合于基板的第二表面,所述第三金属连接结构贯穿磁感应传感器的背面和部分厚度,并与磁感应传感器正面的第三外接焊盘电连接。In one embodiment, the back of the magnetic induction sensor is attached to the second surface of the substrate, and the third metal connection structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor and is electrically connected to the third external pad of the front surface of the magnetic induction sensor.
本发明虽然已以较佳实施例公开如上,但其并不是用来限定本发明,任何本领域技术人员在不脱离本发明的精神和范围内,都可以利用上述揭示的方法和技术内容对本发明技术方案做出可能的变动和修改,因此,凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化及修饰,均属于本发明技术方案的保护范围。The present invention has been disclosed in the preferred embodiments as described above, but it is not intended to limit the invention, and the present invention may be utilized by the method and technical contents disclosed above without departing from the spirit and scope of the invention. The technical solutions make possible changes and modifications. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments in accordance with the technical spirit of the present invention are not included in the technical solutions of the present invention. protected range.

Claims (40)

  1. 一种MEMS传感器封装结构的形成方法,其特征在于,包括:A method for forming a MEMS sensor package structure, comprising:
    提供基板,所述基板包括第一表面和相对的第二表面,所述基板具有互连线路;Providing a substrate, the substrate comprising a first surface and an opposite second surface, the substrate having interconnecting lines;
    提供陀螺仪传感器、加速度传感器和磁感应传感器,所述陀螺仪传感器、加速度传感器和磁感应传感器均包括正面和相对的背面,所述陀螺仪传感器的正面包括若干第一外接焊盘,所述加速度传感器的正面包括若干第二外接焊盘,所述磁感应传感器的正面包括若干第三外接焊盘;Providing a gyro sensor, an acceleration sensor, and a magnetic induction sensor, each of the gyro sensor, the acceleration sensor and the magnetic induction sensor comprising a front surface and an opposite back surface, the front surface of the gyro sensor comprising a plurality of first external pads, the acceleration sensor The front surface includes a plurality of second external pads, and the front surface of the magnetic induction sensor includes a plurality of third external pads;
    将所述陀螺仪传感器和加速度传感器分别安装在基板的第一表面,陀螺仪传感器的第一外接焊盘通过第一金属连接结构与互连线路电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与互连线路电连接;The gyro sensor and the acceleration sensor are respectively mounted on the first surface of the substrate, and the first external pad of the gyro sensor is electrically connected to the interconnection through the first metal connection structure, and the second external pad of the acceleration sensor passes the The two metal connection structure is electrically connected to the interconnection line;
    将所述磁感应传感器安装在基板的第二表面,磁感应传感器的第三外接焊盘通过第三金属连接结构与互连线路电连接;Mounting the magnetic induction sensor on the second surface of the substrate, and the third external pad of the magnetic induction sensor is electrically connected to the interconnection through the third metal connection structure;
    在所述基板的第二表面上形成若干焊接凸起,所述焊接凸起与互连线路电连接,焊接凸起用于与外部电路电连接。A plurality of solder bumps are formed on the second surface of the substrate, the solder bumps being electrically connected to the interconnect lines for electrically connecting to an external circuit.
  2. 如权利要求1所述的MEMS传感器封装结构的形成方法,其特征在于,所述互连线路包括位于基板中的第一互连线路和第二互连线路,以及位于第二表面上的金属线路层,第一互连线路、第二互连线路与金属线路层相互绝缘,陀螺仪传感器的第一外接焊盘通过第一金属连接结构与第一互连线路电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与第二互连线路电连接,磁感应传感器的第三外接焊盘通过第三金属连接结构与 金属线路层电连接;在所述基板的第二表面上形成若干焊接凸起,所述焊机凸起包括第一焊接凸起、第二焊接凸起和第三焊接凸起,所述第一焊接凸起与第一互连线路电连接,第二焊接凸起与第二互连线路电连接,第三焊接凸起与金属线路层电连接。A method of forming a MEMS sensor package structure according to claim 1, wherein said interconnection line comprises a first interconnection line and a second interconnection line in the substrate, and a metal line on the second surface The first interconnect line, the second interconnect line and the metal circuit layer are insulated from each other, and the first external pad of the gyro sensor is electrically connected to the first interconnect line through the first metal connection structure, and the second external connection of the acceleration sensor The pad is electrically connected to the second interconnection through the second metal connection structure, and the third external pad of the magnetic induction sensor is electrically connected to the metal circuit layer through the third metal connection structure; forming a plurality of soldering on the second surface of the substrate a protrusion, the welder protrusion includes a first solder bump, a second solder bump, and a third solder bump, the first solder bump being electrically connected to the first interconnecting line, and the second solder bump The second interconnecting line is electrically connected, and the third soldering bump is electrically connected to the metal wiring layer.
  3. 如权利要求2所述的MEMS传感器封装结构的形成方法,其特征在于,所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,第一金属连接结构和第二金属连接结构为金属线,第一金属连接结构的两端分别与第一外接焊盘和第一互连线路电连接,第一金属连接结构的中间部分悬空在陀螺仪传感器两侧,第二金属连接结构的两端分别与第二外接焊盘和第二互连线路电连接,第二金属连接结构的中间部分悬空在加速度传感器两侧。The method of forming a MEMS sensor package structure according to claim 2, wherein the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure and the second metal connection structure are metal a wire, the two ends of the first metal connection structure are electrically connected to the first external pad and the first interconnection, respectively, and the middle portion of the first metal connection structure is suspended on both sides of the gyro sensor, and both ends of the second metal connection structure The second outer connecting pad and the second interconnecting line are respectively electrically connected, and the middle portion of the second metal connecting structure is suspended on both sides of the acceleration sensor.
  4. 如权利要求3所述的MEMS传感器封装结构的形成方法,其特征在于,还包括:形成至少包覆所述金属线的点胶层。The method of forming a MEMS sensor package structure according to claim 3, further comprising: forming a dispensing layer covering at least the metal line.
  5. 如权利要求4所述的MEMS传感器封装结构的形成方法,其特征在于,在形成点胶层后,将所述磁感应传感器安装在基板的第二表面;将所述磁感应传感器安装在基板的第二表面之后,在在所述基板的第二表面上形成若干焊接凸起。The method of forming a MEMS sensor package structure according to claim 4, wherein after the formation of the dispensing layer, the magnetic induction sensor is mounted on the second surface of the substrate; and the magnetic induction sensor is mounted on the second surface of the substrate After the surface, a plurality of solder bumps are formed on the second surface of the substrate.
  6. 如权利要求2所述的MEMS传感器封装结构的形成方法,其特征在于,所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,所述第一金属连接结构贯穿陀螺仪传感器的背面和部分厚度,并与陀螺仪传感器正面的第一外接焊盘电连接,所述第二金属连接结构贯穿加速度传感器的背面与和部分厚度,并与加速度传感器正面的第二外接焊盘电连接。The method of forming a MEMS sensor package structure according to claim 2, wherein the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure penetrates the back surface of the gyro sensor And a portion of the thickness and electrically connected to the first external pad of the front surface of the gyro sensor, the second metal connection structure penetrating through the back surface and the partial thickness of the acceleration sensor, and electrically connected to the second external pad of the front surface of the acceleration sensor.
  7. 如权利要求2所述的MEMS传感器封装结构的形成方法,其特征在于,所述陀螺仪传感器和加速度传感器分别倒装在基板的第一表面上,所述第一金属连接结构位于第一外接焊盘的表面,第二金属连接结构位于第二外接焊盘的表面。The method of forming a MEMS sensor package structure according to claim 2, wherein the gyro sensor and the acceleration sensor are respectively flipped on the first surface of the substrate, and the first metal connection structure is located on the first external soldering The surface of the disk, the second metal connection structure is located on the surface of the second external pad.
  8. 如权利要求1所述的MEMS传感器封装结构的形成方法,其特征在于,所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,所述陀螺仪传感器还包括角速度感应区,陀螺仪传感器正面上具有第一密封盖,第一密封盖密封所述角速度感应区,若干第一外接焊盘位于第一密封盖两侧;所述加速度传感器还包括加速度感应区,加速度传感器正面上具有第二密封盖,第二密封盖密封所述加速度感应区,若干第二外接焊盘位于第二密封盖两侧。The method of forming a MEMS sensor package structure according to claim 1, wherein the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the gyro sensor further includes an angular velocity sensing area, the gyroscope a first sealing cover is disposed on the front surface of the sensor, the first sealing cover seals the angular velocity sensing area, and a plurality of first external bonding pads are located on two sides of the first sealing cover; the acceleration sensor further includes an acceleration sensing area, and the acceleration sensor has a front surface The second sealing cover seals the acceleration sensing area, and the plurality of second external pads are located on two sides of the second sealing cover.
  9. 如权利要求2所述的MEMS传感器封装结构的形成方法,其特征在于,所述磁感应传感器倒装在基板的第二表面上,所述第三金属连接结构位于第三外接焊盘的表面;或者所述磁感应传感器背面贴合于基板的第二表面,第三金属连接结构为金属线,第三金属连接结构的两端分别与第三外接焊盘和金属层电连接,第三金属连接结构的中间部分悬空在磁感应传感器两侧;或者所述磁感应传感器背面贴合于基板的第二表面,所述第三金属连接结构贯穿磁感应传感器的背面和部分厚度,并与磁感应传感器正面的第三外接焊盘电连接。The method of forming a MEMS sensor package structure according to claim 2, wherein the magnetic induction sensor is flipped on a second surface of the substrate, and the third metal connection structure is located on a surface of the third external pad; or The back side of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure is a metal line, and the two ends of the third metal connection structure are electrically connected to the third external connection pad and the metal layer respectively, and the third metal connection structure is The middle portion is suspended on both sides of the magnetic induction sensor; or the back surface of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure penetrates the back surface and a portion of the thickness of the magnetic induction sensor, and is connected to the third external connection of the front surface of the magnetic induction sensor. Disk connection.
  10. 如权利要求1所述的MEMS传感器封装结构的形成方法,其特征在于,还包括数据处理芯片,数据处理芯片与互连线路电连接。The method of forming a MEMS sensor package structure according to claim 1, further comprising a data processing chip, wherein the data processing chip is electrically connected to the interconnection.
  11. 如权利要求10所述的MEMS传感器封装结构的形成方法,其特征在于, 所述互连线路包括位于基板中的第三互连线路和第四互连线路,以及位于基板的第二表面上的若干第一金属线路层和若干第二金属线路层,第三互连线路、第四互连线路、第一金属线路层和第二金属线路层之间相互绝缘;陀螺仪传感器的第一外接焊盘通过第一金属连接结构与第三互连线路电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与第四互连线路电连接;磁感应传感器的第三外接焊盘通过第三金属连接结构与第一金属线路层电连接;数据处理芯片安装在基板的第二表面,数据处理芯片与第三互连线路、第四互连线路、第一金属线路层和第二金属线路层电连接;焊接凸起位于基板的第二表面上的第二金属线路层的表面。The method of forming a MEMS sensor package structure according to claim 10, wherein the interconnection line comprises a third interconnection line and a fourth interconnection line in the substrate, and is located on the second surface of the substrate a plurality of first metal circuit layers and a plurality of second metal circuit layers, the third interconnection line, the fourth interconnection line, the first metal circuit layer and the second metal circuit layer are insulated from each other; the first external welding of the gyro sensor The disk is electrically connected to the third interconnection through the first metal connection structure, and the second external pad of the acceleration sensor is electrically connected to the fourth interconnection through the second metal connection structure; the third external pad of the magnetic induction sensor passes the third The metal connection structure is electrically connected to the first metal circuit layer; the data processing chip is mounted on the second surface of the substrate, the data processing chip and the third interconnection line, the fourth interconnection line, the first metal line layer and the second metal circuit layer Electrically connecting; the solder bump is located on a surface of the second metal wiring layer on the second surface of the substrate.
  12. 如权利要求11所述的MEMS传感器封装结构的形成方法,其特征在于,所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,第一金属连接结构和第二金属连接结构为金属线,第一金属连接结构的两端分别与第一外接焊盘和第三互连线路电连接,第一金属连接结构的中间部分悬空在陀螺仪传感器两侧,第二金属连接结构的两端分别与第二外接焊盘和第四互连线路电连接,第二金属连接结构的中间部分悬空在加速度传感器两侧;或者所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,所述第一金属连接结构贯穿陀螺仪传感器的背面和部分厚度,并与陀螺仪传感器正面的第一外接焊盘电连接,所述第二金属连接结构贯穿加速度传感器的背面与和部分厚度,并与加速度传感器正面的第二外接焊盘电连接;或者所述陀螺仪传感器和加速度传感器分别倒装在基板的第一表面上,所述第一金属连接结构位于第一外接焊盘的表面,第二金属连接结构位于第二外接焊盘的表面。The method of forming a MEMS sensor package structure according to claim 11, wherein the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure and the second metal connection structure are metal. a wire, the two ends of the first metal connection structure are electrically connected to the first outer pad and the third interconnect line, respectively, the middle portion of the first metal connection structure is suspended on both sides of the gyro sensor, and the two ends of the second metal connection structure Electrically connected to the second external pad and the fourth interconnection, respectively, the middle portion of the second metal connection structure is suspended on both sides of the acceleration sensor; or the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, The first metal connection structure penetrates the back surface and a portion of the thickness of the gyro sensor, and is electrically connected to the first external pad of the front surface of the gyro sensor, and the second metal connection structure penetrates the back surface and the partial thickness of the acceleration sensor, and Electrically connected to a second external pad on the front side of the acceleration sensor; or the gyro sensor and acceleration Flip respectively on a first surface of the substrate, the first surface of the first metal structure is located external connection pads located on a second surface of the second metal structure external connection pad.
  13. 如权利要求12所述的MEMS传感器封装结构的形成方法,其特征在于,将所述陀螺仪传感器和加速度传感器分别安装在基板的第一表面和将数据处理芯片安装在基板的第二表面步骤之后,还包括:形成至少包覆所述金属线的点胶层。The method of forming a MEMS sensor package structure according to claim 12, wherein the gyro sensor and the acceleration sensor are respectively mounted on the first surface of the substrate and the step of mounting the data processing chip on the second surface of the substrate And further comprising: forming a dispensing layer covering at least the metal wire.
  14. 如权利要求11所述的MEMS传感器封装结构的形成方法,其特征在于,所述信号处理芯片倒装在基板的第二表面;或者所述信号处理芯片的背面贴合于基板的第二表面,且所述信号处理芯片通过金属线与第三互连线路、第四互连线路和第二金属线路层电连接。The method of forming a MEMS sensor package structure according to claim 11, wherein the signal processing chip is flipped on the second surface of the substrate; or the back surface of the signal processing chip is attached to the second surface of the substrate. And the signal processing chip is electrically connected to the third interconnection line, the fourth interconnection line, and the second metal line layer through the metal line.
  15. 如权利要求10所述的MEMS传感器封装结构的形成方法,其特征在于,所述互连线路包括位于基板中的第五互连线路和第六互连线路,以及位于基板的第一表面的若干第三金属线路层和若干第四金属线路层,第五互连线路、第六互连线路、第三金属线路层和第四金属线路层相互绝缘;陀螺仪传感器的第一外接焊盘通过第一金属连接结构与第三金属线路层电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与第四金属线路层电连接;磁感应传感器的第三外接焊盘通过第三金属连接结构与第五互连线路电连接;数据处理芯片安装在基板的第一表面,数据处理芯片与第三金属线路层、第四金属线路层、第五互连线路和第六互连线路电连接;所述互连线路还包括位于基板的第二表面上的若干第五金属线路层,第五金属线路层与第六互连线路电连接,焊接凸起位于第五金属线路层的表面,且与第五金属线路层电连接。A method of forming a MEMS sensor package structure according to claim 10, wherein said interconnect line comprises a fifth interconnect line and a sixth interconnect line in the substrate, and a plurality of first surfaces on the substrate a third metal circuit layer and a plurality of fourth metal circuit layers, the fifth interconnection line, the sixth interconnection line, the third metal circuit layer and the fourth metal circuit layer are insulated from each other; the first external pad of the gyro sensor passes the a metal connection structure is electrically connected to the third metal circuit layer, and the second external connection pad of the acceleration sensor is electrically connected to the fourth metal circuit layer through the second metal connection structure; the third external connection pad of the magnetic induction sensor passes through the third metal connection structure Electrically connecting with the fifth interconnection line; the data processing chip is mounted on the first surface of the substrate, and the data processing chip is electrically connected to the third metal circuit layer, the fourth metal circuit layer, the fifth interconnection line, and the sixth interconnection line; The interconnection further includes a plurality of fifth metal circuit layers on the second surface of the substrate, the fifth metal circuit layer being electrically connected to the sixth interconnection, soldering A fifth projection positioned on the surface of the metal wiring layer, and is electrically connected to the fifth metal wiring layer.
  16. 如权利要求1所述的MEMS传感器封装结构的形成方法,其特征在于,还包括第一数据处理芯片、第二数据处理芯片和第三数据处理芯片,所述 第一数据处理芯片与陀螺仪传感器电连接,所述第二数据处理芯片与加速度传感器电连接,所述第三数据处理芯片与磁感应传感器电连接。The method of forming a MEMS sensor package structure according to claim 1, further comprising a first data processing chip, a second data processing chip, and a third data processing chip, the first data processing chip and the gyro sensor Electrically connected, the second data processing chip is electrically connected to the acceleration sensor, and the third data processing chip is electrically connected to the magnetic induction sensor.
  17. 如权利要求16所述的MEMS传感器封装结构的形成方法,其特征在于,所述互连线路包括位于基板中的第一互连线路和第二互连线路,以及位于基板的第二表面上的金属线路层;陀螺仪传感器的第一外接焊盘通过第一金属连接结构与第一互连线路电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与第二互连线路电连接;磁感应传感器的第三外接焊盘通过第三金属连接结构与金属线路层电连接;在基板的第二表面形成焊接凸起,所述焊接凸起包括第一焊接凸起、第二焊接凸起和第三焊接凸起,第一焊接凸起与第一互连线路电连接,第二焊接凸起与第二互连线路电连接,第三焊接凸起与金属线路层电连接。A method of forming a MEMS sensor package structure according to claim 16 wherein said interconnect line comprises a first interconnect line and a second interconnect line in the substrate, and on a second surface of the substrate a metal circuit layer; the first external pad of the gyro sensor is electrically connected to the first interconnection through the first metal connection structure, and the second external pad of the acceleration sensor is electrically connected to the second interconnection through the second metal connection structure The third outer pad of the magnetic induction sensor is electrically connected to the metal circuit layer through the third metal connection structure; the solder bump is formed on the second surface of the substrate, and the solder bump includes the first solder bump and the second solder bump And a third solder bump, the first solder bump is electrically connected to the first interconnecting line, the second solder bump is electrically connected to the second interconnecting line, and the third solder bump is electrically connected to the metal wiring layer.
  18. 如权利要求17所述的MEMS传感器封装结构的形成方法,其特征在于,陀螺仪传感器的正面具有若干第一内部焊盘和第一外接焊盘,第一数据处理芯片位于陀螺仪传感器的正面上,第一数据处理芯片与第一内部焊盘和第一外接焊盘电连接,加速度传感器的正面具有若干第二内部焊盘和第二外接焊盘,第二数据处理芯片位于加速度传感器的正面,第二数据处理芯片与第二内部焊盘和第二外接焊盘电连接,磁感应传感器的正面具有第三内部焊盘和第三外接焊盘,第三数据处理芯片位于磁感应传感器正面上,第三数据处理芯片与第三内部焊盘和第三外接焊盘电连接。The method of forming a MEMS sensor package structure according to claim 17, wherein the front surface of the gyro sensor has a plurality of first internal pads and a first external pads, and the first data processing chip is located on the front surface of the gyro sensor. The first data processing chip is electrically connected to the first inner pad and the first outer pad. The front surface of the acceleration sensor has a plurality of second inner pads and second outer pads, and the second data processing chip is located on the front side of the acceleration sensor. The second data processing chip is electrically connected to the second internal pad and the second external pad, the front surface of the magnetic induction sensor has a third internal pad and a third external pad, and the third data processing chip is located on the front surface of the magnetic induction sensor, and the third The data processing chip is electrically connected to the third internal pad and the third external pad.
  19. 如权利要求18所述的MEMS传感器封装结构的形成方法,其特征在于,所述第一数据处理芯片包括正面和相对的背面,所述第一数据处理芯片的正面具有输入焊盘和输出焊盘,第一数据处理芯片的输入焊盘通过第四金 属连接结构与第一内部焊盘电连接,第一数据处理芯片的输出焊盘通过第五金属连接结构与第一外接焊盘电连接,所述第二数据处理芯片包括正面和相对的背面,输入焊盘和输出焊盘位于第二数据处理芯片的正面,第二数据处理芯片的输入焊盘通过第六金属连接结构与第二内部焊盘电连接,第二数据处理芯片的输出焊盘通过第七金属连接结构与第二外接焊盘电连接,所述第三数据处理芯片包括正面和相对的背面,输入焊盘和输出焊盘位于第三数据处理芯片的正面,第三数据处理芯片的输入焊盘通过第八金属连接结构与第三内部焊盘电连接,第三数据处理芯片的输出焊盘通过第九金属连接结构与第三外接焊盘电连接。The method of forming a MEMS sensor package structure according to claim 18, wherein said first data processing chip comprises a front side and an opposite back side, and said front side of said first data processing chip has an input pad and an output pad The input pad of the first data processing chip is electrically connected to the first internal pad through the fourth metal connection structure, and the output pad of the first data processing chip is electrically connected to the first external pad through the fifth metal connection structure. The second data processing chip includes a front surface and an opposite back surface, the input pad and the output pad are located on the front surface of the second data processing chip, and the input pad of the second data processing chip passes through the sixth metal connection structure and the second internal pad Electrically connected, the output pad of the second data processing chip is electrically connected to the second external pad through a seventh metal connection structure, the third data processing chip includes a front surface and an opposite back surface, and the input pad and the output pad are located at the The front surface of the three data processing chip, the input pad of the third data processing chip is electrically connected to the third internal pad through the eighth metal connection structure, The output pad of the third data processing chip is electrically connected to the third external pad through the ninth metal connection structure.
  20. 如权利要求19所述的MEMS传感器封装结构的形成方法,其特征在于,所述第一数据处理芯片的背面贴合于陀螺仪传感器的正面,第二数据处理芯片的背面贴合于加速度传感器的正面,第三数据处理芯片的背面贴合于磁感应传感器的正面;或者所述第一数据处理芯片倒装在陀螺仪传感器的正面上,所述第二数据处理芯片倒装在加速度传感器的正面上,所述第三数据处理芯片倒装在磁感应传感器的正面上-。The method of forming a MEMS sensor package structure according to claim 19, wherein a back surface of the first data processing chip is attached to a front surface of the gyro sensor, and a back surface of the second data processing chip is attached to the acceleration sensor. a front surface of the third data processing chip is attached to the front surface of the magnetic induction sensor; or the first data processing chip is flipped on the front surface of the gyro sensor, and the second data processing chip is flipped on the front surface of the acceleration sensor The third data processing chip is flipped on the front side of the magnetic induction sensor.
  21. 如权利要求20所述的MEMS传感器封装结构的形成方法,其特征在于,所述第一数据处理芯片的背面贴合于陀螺仪传感器的正面,第二数据处理芯片的背面贴合于加速度传感器的正面,第三数据处理芯片的背面贴合于磁感应传感器的正面时,所述第一数据处理芯片、第二数据处理芯片和第三数据处理芯片的背面形成凹槽。The method of forming a MEMS sensor package structure according to claim 20, wherein a back surface of the first data processing chip is attached to a front surface of the gyro sensor, and a back surface of the second data processing chip is attached to the acceleration sensor. When the back surface of the third data processing chip is attached to the front surface of the magnetic induction sensor, the back surfaces of the first data processing chip, the second data processing chip and the third data processing chip form a groove.
  22. 如权利要求1所述的MEMS传感器封装结构的形成方法,其特征在于,所述陀螺仪传感器为三轴陀螺仪传感器,所述加速度传感器为三轴加速度 传感器,所述磁感应传感器为三轴磁感应传感器。The method of forming a MEMS sensor package structure according to claim 1, wherein the gyro sensor is a three-axis gyro sensor, the acceleration sensor is a three-axis acceleration sensor, and the magnetic induction sensor is a three-axis magnetic induction sensor. .
  23. 一种MEMS传感器封装结构,其特征在于,包括:A MEMS sensor package structure, comprising:
    基板,所述基板包括第一表面和相对的第二表面,所述基板具有互连线路;a substrate comprising a first surface and an opposite second surface, the substrate having interconnecting lines;
    陀螺仪传感器、加速度传感器和磁感应传感器,所述陀螺仪传感器、加速度传感器和磁感应传感器均包括正面和相对的背面,所述陀螺仪传感器的正面包括若干第一外接焊盘,所述加速度传感器的正面包括若干第二外接焊盘,所述磁感应传感器的正面包括若干第三外接焊盘;所述陀螺仪传感器和加速度传感器安装在基板的第一表面,陀螺仪传感器的第一外接焊盘通过第一金属连接结构与互连线路电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与互连线路电连接;所述磁感应传感器安装在基板的第二表面,磁感应传感器的第三外接焊盘通过第三金属连接结构与互连线路电连接;a gyro sensor, an acceleration sensor, and a magnetic induction sensor, each of the gyro sensor, the acceleration sensor, and the magnetic induction sensor includes a front surface and an opposite back surface, and the front surface of the gyro sensor includes a plurality of first external pads, a front surface of the acceleration sensor a plurality of second external pads, the front surface of the magnetic induction sensor includes a plurality of third external pads; the gyro sensor and the acceleration sensor are mounted on the first surface of the substrate, and the first external pads of the gyro sensor pass the first The metal connection structure is electrically connected to the interconnection line, and the second external connection pad of the acceleration sensor is electrically connected to the interconnection line through the second metal connection structure; the magnetic induction sensor is mounted on the second surface of the substrate, and the third external connection of the magnetic induction sensor The disk is electrically connected to the interconnection through the third metal connection structure;
    位于所述基板第二表面上的若干焊接凸起,所述焊接凸起与互连线路电连接,焊接凸起用于与外部电路电连接。A plurality of solder bumps on the second surface of the substrate, the solder bumps being electrically connected to the interconnect lines for electrically connecting to an external circuit.
  24. 如权利要求23所述的MEMS传感器封装结构,其特征在于,所述互连线路包括位于基板中的第一互连线路和第二互连线路,以及位于第二表面上的金属线路层,第一互连线路、第二互连线路与金属线路层相互绝缘,陀螺仪传感器的第一外接焊盘通过第一金属连接结构与第一互连线路电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与第二互连线路电连接,磁感应传感器的第三外接焊盘通过第三金属连接结构与金属线路层电连接;位于基板的第二表面的若干焊接凸起,所述焊机凸起包括第一 焊接凸起、第二焊接凸起和第三焊接凸起,所述第一焊接凸起与第一互连线路电连接,第二焊接凸起与第二互连线路电连接,第三焊接凸起与金属线路层电连接。A MEMS sensor package structure according to claim 23, wherein said interconnection line comprises a first interconnection line and a second interconnection line in the substrate, and a metal wiring layer on the second surface, An interconnection line, a second interconnection line and a metal circuit layer are insulated from each other, and the first external connection pad of the gyro sensor is electrically connected to the first interconnection line through the first metal connection structure, and the second external connection pad of the acceleration sensor passes The second metal connection structure is electrically connected to the second interconnection line, and the third external connection pad of the magnetic induction sensor is electrically connected to the metal circuit layer through the third metal connection structure; a plurality of solder bumps on the second surface of the substrate, the soldering The machine protrusion includes a first welding protrusion, a second welding protrusion and a third welding protrusion, the first welding protrusion is electrically connected to the first interconnection line, and the second welding protrusion is electrically connected to the second interconnection line The third solder bump is electrically connected to the metal wiring layer.
  25. 如权利要求24所述的MEMS传感器封装结构,其特征在于,所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,第一金属连接结构和第二金属连接结构为金属线,第一金属连接结构的两端分别与第一外接焊盘和第一互连线路电连接,第一金属连接结构的中间部分悬空在陀螺仪传感器两侧,第二金属连接结构的两端分别与第二外接焊盘和第二互连线路电连接,第二金属连接结构的中间部分悬空在加速度传感器两侧;或者所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,所述第一金属连接结构贯穿陀螺仪传感器的背面和部分厚度,并与陀螺仪传感器正面的第一外接焊盘电连接,所述第二金属连接结构贯穿加速度传感器的背面与和部分厚度,并与加速度传感器正面的第二外接焊盘电连接;或者所述陀螺仪传感器和加速度传感器分别倒装在基板的第一表面上,所述第一金属连接结构位于第一外接焊盘的表面,第二金属连接结构位于第二外接焊盘的表面。The MEMS sensor package structure according to claim 24, wherein the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure and the second metal connection structure are metal wires, Two ends of a metal connection structure are electrically connected to the first external pad and the first interconnection, respectively, and the middle portion of the first metal connection structure is suspended on both sides of the gyro sensor, and the two ends of the second metal connection structure are respectively The second external pad and the second interconnection are electrically connected, the middle portion of the second metal connection structure is suspended on both sides of the acceleration sensor; or the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, a metal connection structure penetrates the back surface and a portion of the thickness of the gyro sensor, and is electrically connected to the first external pad of the front surface of the gyro sensor, the second metal connection structure penetrates the back surface and the partial thickness of the acceleration sensor, and the acceleration sensor The second external pad of the front surface is electrically connected; or the gyro sensor and the acceleration sensor are respectively inverted On a first surface of the substrate, the first surface of the first metal structure is located external connection pads located on a second surface of the second metal structure external connection pad.
  26. 如权利要求25所述的MEMS传感器封装结构,其特征在于,还包括:至少密封所述金属线的点胶层。The MEMS sensor package of claim 25, further comprising: a glue layer that at least seals the metal lines.
  27. 如权利要求25所述的MEMS传感器封装结构,其特征在于,所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,所述陀螺仪传感器还包括角速度感应区,陀螺仪传感器正面上具有第一密封盖,第一密封盖密封所述角速度感应区,若干第一外接焊盘位于第一密封盖两侧;所述加 速度传感器还包括加速度感应区,加速度传感器正面上具有第二密封盖,第二密封盖密封所述加速度感应区,若干第二外接焊盘位于第二密封盖两侧。The MEMS sensor package structure according to claim 25, wherein the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the gyro sensor further includes an angular velocity sensing area on the front surface of the gyro sensor Having a first sealing cover, the first sealing cover sealing the angular velocity sensing area, a plurality of first external pads are located on both sides of the first sealing cover; the acceleration sensor further comprises an acceleration sensing area, and the second surface of the acceleration sensor has a second sealing cover The second sealing cover seals the acceleration sensing area, and the plurality of second external pads are located on two sides of the second sealing cover.
  28. 如权利要求24所述的MEMS传感器封装结构,其特征在于,所述磁感应传感器倒装在基板的第二表面上,所述第三金属连接结构位于第三外接焊盘的表面;或者所述磁感应传感器背面贴合于基板的第二表面,第三金属连接结构为金属线,第三金属连接结构的两端分别与第三外接焊盘和金属线路层电连接,第三金属连接结构的中间部分悬空在磁感应传感器两侧;或者所述磁感应传感器背面贴合于基板的第二表面,所述第三金属连接结构贯穿磁感应传感器的背面和部分厚度,并与磁感应传感器正面的第三外接焊盘电连接。The MEMS sensor package structure according to claim 24, wherein the magnetic induction sensor is flipped on a second surface of the substrate, the third metal connection structure is located on a surface of the third external pad; or the magnetic induction The back surface of the sensor is attached to the second surface of the substrate, the third metal connection structure is a metal wire, and the two ends of the third metal connection structure are electrically connected to the third external connection pad and the metal circuit layer respectively, and the middle portion of the third metal connection structure Hanging on both sides of the magnetic induction sensor; or the back of the magnetic induction sensor is attached to the second surface of the substrate, the third metal connection structure penetrating the back surface and the partial thickness of the magnetic induction sensor, and electrically connected to the third external connection pad on the front surface of the magnetic induction sensor connection.
  29. 如权利要求23所述的MEMS传感器封装结构,其特征在于,还包括数据处理芯片,数据处理芯片与互连线路电连接。The MEMS sensor package of claim 23, further comprising a data processing chip, the data processing chip being electrically coupled to the interconnect.
  30. 如权利要求29所述的MEMS传感器封装结构,其特征在于,所述互连线路包括位于基板中的第三互连线路和第四互连线路,以及位于基板的第二表面上的若干第一金属线路层和若干第二金属线路层,第三互连线路、第四互连线路、第一金属线路层和第二金属线路层之间相互绝缘;陀螺仪传感器的第一外接焊盘通过第一金属连接结构与第三互连线路电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与第四互连线路电连接;磁感应传感器的第三外接焊盘通过第三金属连接结构与第一金属线路层电连接;数据处理芯片安装在基板的第二表面,数据处理芯片与第三互连线路、第四互连线路、第一金属线路层和第二金属线路层电连接;焊接 凸起位于基板的第二表面上的第二金属线路层的表面,且与第二金属线路层电连接。A MEMS sensor package structure according to claim 29, wherein said interconnect line comprises a third interconnect line and a fourth interconnect line in the substrate, and a plurality of first ones on the second surface of the substrate The metal circuit layer and the plurality of second metal circuit layers, the third interconnection line, the fourth interconnection line, the first metal circuit layer and the second metal circuit layer are insulated from each other; the first external pad of the gyro sensor passes the a metal connection structure is electrically connected to the third interconnection line, and the second external connection pad of the acceleration sensor is electrically connected to the fourth interconnection line through the second metal connection structure; the third external connection pad of the magnetic induction sensor passes through the third metal connection structure Electrically connecting with the first metal circuit layer; the data processing chip is mounted on the second surface of the substrate, and the data processing chip is electrically connected to the third interconnection line, the fourth interconnection line, the first metal line layer and the second metal line layer; The solder bump is located on a surface of the second metal wiring layer on the second surface of the substrate and is electrically connected to the second metal wiring layer.
  31. 如权利要求30所述的MEMS传感器封装结构,其特征在于,所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,第一金属连接结构和第二金属连接结构为金属线,第一金属连接结构的两端分别与第一外接焊盘和第三互连线路电连接,第一金属连接结构的中间部分悬空在陀螺仪传感器两侧,第二金属连接结构的两端分别与第二外接焊盘和第四互连线路电连接,第二金属连接结构的中间部分悬空在加速度传感器两侧;或者所述陀螺仪传感器和加速度传感器背面贴合于基板的第一表面,所述第一金属连接结构贯穿陀螺仪传感器的背面和部分厚度,并与陀螺仪传感器正面的第一外接焊盘电连接,所述第二金属连接结构贯穿加速度传感器的背面与和部分厚度,并与加速度传感器正面的第二外接焊盘电连接;或者所述陀螺仪传感器和加速度传感器分别倒装在基板的第一表面上,所述第一金属连接结构位于第一外接焊盘的表面,第二金属连接结构位于第二外接焊盘的表面。The MEMS sensor package structure according to claim 30, wherein the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, and the first metal connection structure and the second metal connection structure are metal wires, Two ends of a metal connection structure are electrically connected to the first outer pad and the third interconnect line, respectively, and the middle portion of the first metal connection structure is suspended on both sides of the gyro sensor, and the two ends of the second metal connection structure are respectively The second external pad and the fourth interconnection are electrically connected, the middle portion of the second metal connection structure is suspended on both sides of the acceleration sensor; or the back surface of the gyro sensor and the acceleration sensor are attached to the first surface of the substrate, a metal connection structure penetrates the back surface and a portion of the thickness of the gyro sensor, and is electrically connected to the first external pad of the front surface of the gyro sensor, the second metal connection structure penetrates the back surface and the partial thickness of the acceleration sensor, and the acceleration sensor The second external pad of the front surface is electrically connected; or the gyro sensor and the acceleration sensor are respectively inverted On a first surface of the substrate, the first surface of the first metal structure is located external connection pads located on a second surface of the second metal structure external connection pad.
  32. 如权利要求29所述的MEMS传感器封装结构,其特征在于,所述信号处理芯片倒装在基板的第二表面;或者所述信号处理芯片的背面贴合于基板的第二表面,所述信号处理芯片通过金属线与第三互连线路、第四互连线路和第二金属线路层电连接。The MEMS sensor package structure according to claim 29, wherein the signal processing chip is flipped on the second surface of the substrate; or the back surface of the signal processing chip is attached to the second surface of the substrate, the signal The processing chip is electrically connected to the third interconnect line, the fourth interconnect line, and the second metal line layer through the metal line.
  33. 如权利要求29所述的MEMS传感器封装结构,其特征在于,所述互连线路包括位于基板中的第五互连线路和第六互连线路,以及位于基板的第一表面的若干第三金属线路层和若干第四金属线路层,第五互连线路、第 六互连线路、第三金属线路层和第四金属线路层相互绝缘;陀螺仪传感器的第一外接焊盘通过第一金属连接结构与第三金属线路层电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与第四金属线路层电连接;磁感应传感器的第三外接焊盘通过第三金属连接结构与第五互连线路电连接;数据处理芯片安装在基板的第一表面,数据处理芯片与第三金属线路层、第四金属线路层、第五互连线路和第六互连线路电连接;所述互连线路还包括位于基板的第二表面上的若干第五金属线路层,第五金属线路层与第六互连线路电连接,焊接凸起位于第五金属线路层的表面,且与第五金属线路层电连接。The MEMS sensor package structure of claim 29 wherein said interconnect line comprises a fifth interconnect line and a sixth interconnect line in the substrate, and a plurality of third metal on the first surface of the substrate The circuit layer and the plurality of fourth metal circuit layers, the fifth interconnection line, the sixth interconnection line, the third metal circuit layer and the fourth metal circuit layer are insulated from each other; the first external pad of the gyro sensor is connected by the first metal The structure is electrically connected to the third metal circuit layer, and the second external pad of the acceleration sensor is electrically connected to the fourth metal circuit layer through the second metal connection structure; the third external connection pad of the magnetic induction sensor passes the third metal connection structure and the fifth An interconnection circuit is electrically connected; a data processing chip is mounted on the first surface of the substrate, and the data processing chip is electrically connected to the third metal circuit layer, the fourth metal circuit layer, the fifth interconnection line, and the sixth interconnection line; The connection circuit further includes a plurality of fifth metal circuit layers on the second surface of the substrate, the fifth metal circuit layer being electrically connected to the sixth interconnection line, the solder bumps being located The surface of the fifth metal circuit layer is electrically connected to the fifth metal circuit layer.
  34. 如权利要求23所述的MEMS传感器封装结构,其特征在于,还包括第一数据处理芯片、第二数据处理芯片和第三数据处理芯片,所述第一数据处理芯片与陀螺仪传感器电连接,所述第二数据处理芯片与加速度传感器电连接,所述第三数据处理芯片与磁感应传感器电连接。The MEMS sensor package structure according to claim 23, further comprising a first data processing chip, a second data processing chip and a third data processing chip, wherein the first data processing chip is electrically connected to the gyro sensor, The second data processing chip is electrically connected to the acceleration sensor, and the third data processing chip is electrically connected to the magnetic induction sensor.
  35. 如权利要求34所述的MEMS传感器封装结构,其特征在于,所述互连线路包括位于基板中的第一互连线路和第二互连线路,以及位于基板的第二表面上的金属线路层;陀螺仪传感器的第一外接焊盘通过第一金属连接结构与第一互连线路电连接,加速度传感器的第二外接焊盘通过第二金属连接结构与第二互连线路电连接;磁感应传感器的第三外接焊盘通过第三金属连接结构与金属线路层电连接;位于基板的第二表面的若干焊接凸起,所述焊接凸起包括第一焊接凸起、第二焊接凸起和第三焊接凸起,第一焊接凸起与第一互连线路电连接,第二焊接凸起与第二互连线路电连接,第三焊接凸起与金属线路层电连接。A MEMS sensor package structure according to claim 34, wherein said interconnection comprises a first interconnection line and a second interconnection line in the substrate, and a metal wiring layer on the second surface of the substrate The first external pad of the gyro sensor is electrically connected to the first interconnection through the first metal connection structure, and the second external pad of the acceleration sensor is electrically connected to the second interconnection through the second metal connection structure; the magnetic induction sensor The third external pad is electrically connected to the metal circuit layer through the third metal connection structure; a plurality of solder bumps on the second surface of the substrate, the solder bumps including the first solder bump, the second solder bump, and the first The third solder bump is electrically connected to the first interconnecting line, the second solder bump is electrically connected to the second interconnecting line, and the third soldering bump is electrically connected to the metal wiring layer.
  36. 如权利要求35所述的MEMS传感器封装结构,其特征在于,陀螺仪传感器的正面具有若干第一内部焊盘和第一外接焊盘,第一数据处理芯片位于陀螺仪传感器的正面上,第一数据处理芯片与第一内部焊盘和第一外接焊盘电连接,加速度传感器的正面具有若干第二内部焊盘和第二外接焊盘,第二数据处理芯片位于加速度传感器的正面,第二数据处理芯片与第二内部焊盘和第二外接焊盘电连接,磁感应传感器的正面具有第三内部焊盘和第三外接焊盘,第三数据处理芯片位于磁感应传感器正面上,第三数据处理芯片与第三内部焊盘和第三外接焊盘电连接。The MEMS sensor package structure according to claim 35, wherein the front surface of the gyro sensor has a plurality of first inner pads and a first outer pad, and the first data processing chip is located on the front surface of the gyro sensor, first The data processing chip is electrically connected to the first internal pad and the first external pad. The front surface of the acceleration sensor has a plurality of second internal pads and a second external pad. The second data processing chip is located on the front side of the acceleration sensor, and the second data is The processing chip is electrically connected to the second internal pad and the second external pad, the front surface of the magnetic induction sensor has a third internal pad and a third external pad, and the third data processing chip is located on the front surface of the magnetic induction sensor, and the third data processing chip Electrically connected to the third inner pad and the third outer pad.
  37. 如权利要求36所述的MEMS传感器封装结构,其特征在于,所述第一数据处理芯片包括正面和相对的背面,所述第一数据处理芯片的正面具有输入焊盘和输出焊盘,第一数据处理芯片的输入焊盘通过第四金属连接结构与第一内部焊盘电连接,第一数据处理芯片的输出焊盘通过第五金属连接结构与第一外接焊盘电连接,所述第二数据处理芯片包括正面和相对的背面,输入焊盘和输出焊盘位于第二数据处理芯片的正面,第二数据处理芯片的输入焊盘通过第六金属连接结构与第二内部焊盘电连接,第二数据处理芯片的输出焊盘通过第七金属连接结构与第二外接焊盘电连接,所述第三数据处理芯片包括正面和相对的背面,输入焊盘和输出焊盘位于第三数据处理芯片的正面,第三数据处理芯片的输入焊盘通过第八金属连接结构与第三内部焊盘电连接,第三数据处理芯片的输出焊盘通过第九金属连接结构与第三外接焊盘电连接。The MEMS sensor package structure according to claim 36, wherein said first data processing chip comprises a front side and an opposite back side, and said front side of said first data processing chip has an input pad and an output pad, first The input pad of the data processing chip is electrically connected to the first internal pad through the fourth metal connection structure, and the output pad of the first data processing chip is electrically connected to the first external pad through the fifth metal connection structure, the second The data processing chip includes a front surface and an opposite back surface, the input pad and the output pad are located on the front surface of the second data processing chip, and the input pad of the second data processing chip is electrically connected to the second internal pad through the sixth metal connection structure. The output pad of the second data processing chip is electrically connected to the second external pad through a seventh metal connection structure, the third data processing chip includes a front surface and an opposite back surface, and the input pad and the output pad are located in the third data processing On the front side of the chip, the input pad of the third data processing chip is electrically connected to the third internal pad through the eighth metal connection structure, and the third data portion Chip output pad is connected to the third external connection structure of the ninth through the metal pad electrically.
  38. 如权利要求37所述的MEMS传感器封装结构,其特征在于,所述第一数据处理芯片的背面贴合于陀螺仪传感器的正面,第二数据处理芯片的背 面贴合于加速度传感器的正面,第三数据处理芯片的背面贴合于磁感应传感器的正面;或者所述第一数据处理芯片倒装在陀螺仪传感器的正面上,所述第二数据处理芯片倒装在加速度传感器的正面上,所述第三数据处理芯片倒装在磁感应传感器的正面上。The MEMS sensor package structure according to claim 37, wherein the back surface of the first data processing chip is attached to the front surface of the gyro sensor, and the back surface of the second data processing chip is attached to the front surface of the acceleration sensor. a back surface of the three data processing chip is attached to the front surface of the magnetic induction sensor; or the first data processing chip is flipped on the front surface of the gyro sensor, and the second data processing chip is flipped on the front surface of the acceleration sensor, The third data processing chip is flipped on the front side of the magnetic induction sensor.
  39. 如权利要求38所述的MEMS传感器封装结构,其特征在于,所述第一数据处理芯片、第二数据处理芯片和第三数据处理芯片的背面形成凹槽。The MEMS sensor package structure according to claim 38, wherein the back surfaces of the first data processing chip, the second data processing chip, and the third data processing chip form a recess.
  40. 如权利要求23所述的MEMS传感器封装结构,其特征在于,所述陀螺仪传感器为三轴陀螺仪传感器,所述加速度传感器为三轴加速度传感器,所述磁感应传感器为三轴磁感应传感器。The MEMS sensor package structure according to claim 23, wherein the gyro sensor is a three-axis gyro sensor, the acceleration sensor is a three-axis acceleration sensor, and the magnetic induction sensor is a three-axis magnetic induction sensor.
PCT/CN2017/116439 2016-12-30 2017-12-15 Mems sensor packaging structure and fabricating method thereof WO2018121289A1 (en)

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