WO2018119870A1 - Photoresist coating process and loading device - Google Patents

Photoresist coating process and loading device Download PDF

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Publication number
WO2018119870A1
WO2018119870A1 PCT/CN2016/112998 CN2016112998W WO2018119870A1 WO 2018119870 A1 WO2018119870 A1 WO 2018119870A1 CN 2016112998 W CN2016112998 W CN 2016112998W WO 2018119870 A1 WO2018119870 A1 WO 2018119870A1
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Prior art keywords
photoresist
magnetic
coating process
substrate
magnetic field
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PCT/CN2016/112998
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French (fr)
Chinese (zh)
Inventor
徐顺龙
Original Assignee
深圳市柔宇科技有限公司
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Application filed by 深圳市柔宇科技有限公司 filed Critical 深圳市柔宇科技有限公司
Priority to CN201680049301.0A priority Critical patent/CN108698070B/en
Priority to PCT/CN2016/112998 priority patent/WO2018119870A1/en
Publication of WO2018119870A1 publication Critical patent/WO2018119870A1/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work

Definitions

  • the present invention belongs to the field of display panels, and in particular, to a photoresist coating process and a loading device.
  • the photoresist coating process is part of a process in a TFTCThin Film Transistor (TFTCT) array substrate. Specifically, it is common practice to first pass PVD (Physical Vapor Deposition) or CVD (Chemical Vapor Deposition) on the substrate.
  • PVD Physical Vapor Deposition
  • CVD Chemical Vapor Deposition
  • a conductive layer is deposited in a manner, and a photoresist is coated on the conductive layer to form a photoresist layer.
  • P VD or CVD is prolonged, resulting in a long-lasting and inefficient photoresist coating process.
  • the object of the present invention is to overcome the above-mentioned deficiencies of the prior art and to provide a photoresist coating process which aims to solve the problems of long consumption and low efficiency.
  • the present invention is implemented as follows:
  • a photoresist coating process comprising the steps of:
  • a magnetic field is generated on one side of the substrate, and the magnetic photoresist material is separated into a conductive layer and a photoresist layer by the magnetic field.
  • the magnetic photoresist material is a mixed material formed of a photoresist and a magnetic organic substance.
  • the magnetic photoresist material is a magnetic polymer compound composed of a metal oxide core, a shell material composed of a polymer material, and mixed with an organic photoresist.
  • the magnetic photoresist material is a magnetic polymer compound formed by using a polymer material as a core, a magnetic material as a shell layer, and mixing with an organic photoresist.
  • the conductive layer is in the magnetic
  • the substrate is adsorbed on the substrate, and the photoresist layer covers the conductive layer away from the surface of the substrate.
  • the magnetic field is generated by an energized coil in an energized state.
  • the energizing coil is disposed in the loading platform.
  • the present invention also provides a loading device for a photoresist coating process, the loading device includes the loading platform, and the loading platform includes a loading station for generating The energized coil of the magnetic field.
  • the loading platform includes a limiting structure disposed on the loading platform for preventing the substrate from sliding
  • the limiting structure is a clamp.
  • the structure of the present invention in the photoresist coating process, since the magnetic photoresist material is selected and the magnetic field is set, magnetic properties are realized by magnetic interaction between the magnetic photoresist material and the magnetic field.
  • the photoresist is separated to form a conductive layer and a photoresist layer.
  • the conductive layer and the photoresist layer can be formed by only one coating process, and the conductive layer can be formed by PVD first, and then the photoresist layer can be formed by coating, thereby reducing the process on the process. Improve efficiency and reduce manufacturing costs.
  • FIG. 1 is a flow chart of a photoresist coating process provided by an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of the loading stage and the substrate in step S110 in the photoresist coating process according to an embodiment of the present invention
  • FIG. 3 is a cross-sectional view of a loading stage, a substrate, and a magnetic photoresist material in step S120 in the photoresist coating process according to an embodiment of the present invention
  • step S130 in the photoresist coating process according to an embodiment of the present invention.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first” and “second” may explicitly or implicitly include one or more of the features.
  • the meaning of “plurality” is two or more, unless specifically defined otherwise.
  • the terms “installation”, “connected”, “connected”, “fixed” and the like should be understood broadly, and may be, for example, a fixed connection or a Removable connection, or integrated; can be mechanical connection or electrical connection; it can be directly connected or indirectly connected through an intermediate medium, which can be the internal connection of two elements or the interaction of two elements.
  • an intermediate medium which can be the internal connection of two elements or the interaction of two elements.
  • a first embodiment of the present invention provides a photoresist coating process. It can be understood that the photoresist coating process can be applied to various fields. For the convenience of the reader, the process of forming the gate electrode in the TFT array substrate will be exemplified herein. It should be noted, however, that the applicability of the photoresist coating process in the specific embodiment of the present invention is not limited to the gate electrode used in forming the TFT array substrate. Referring to FIG. 1, the photoresist coating process includes the following steps:
  • Step S110 referring to FIG. 2, a loading stage 10 is provided, and the substrate 20 to be coated with the photoresist is placed on the loading table 10.
  • the substrate 20 is a substrate in a TFT array substrate.
  • the substrate 20 may be a hard material (e.g., glass, resin, etc.) or a flexible material (e.g., polyimide, etc.).
  • the loading stage 10 is made of a hard material.
  • the loading station 10 is used to carry the substrate 20.
  • the loading platform 10 can include a limiting structure (not shown) disposed on the loading platform 10.
  • the stop structure serves to prevent translation of the substrate 20.
  • the limiting structure may be a limiting protrusion provided by the protrusion or a clamp.
  • the limiting structure adopts a clamp. Since the jig can be applied to the substrate 20 of various sizes, it is advantageous to improve the applicability of the limit structure.
  • Step S120 referring to FIG. 3 together, a magnetic photoresist material 30 is coated on the substrate 20.
  • the magnetic photoresist material 30 is a mixed material formed of a photoresist and a magnetic organic substance, and the mixed material can be separated into a two-layer structure of a conductive layer and a photoresist layer by magnetic action.
  • the magnetic photoresist material 30 may be a core composed of a metal oxide (such as an oxide such as iron, cobalt, or nickel), a shell layer composed of a polymer material, and a magnetic body formed by mixing with an organic photoresist.
  • the polymer compound may be a magnetic polymer compound formed by mixing a polymer material as a core, a magnetic material as a shell layer, and an organic photoresist.
  • step S120 the magnetic photoresist material 30 may be applied to the substrate 20 using a conventional coating nozzle.
  • the existing equipment can be fully utilized without special setting of a new coating device for coating, which is advantageous in reducing costs.
  • Step S130 referring to FIG. 4, a magnetic field is generated on one side of the substrate 20 to separate the magnetic photoresist material 30 into the conductive layer 31 and the photoresist layer 33.
  • the magnetic field is used to generate a magnetic force that drives the magnetic organic matter in the magnetic photoresist material 30 to move toward the side of the loading stage 10.
  • the magnetic photoresist material 30 is separated by the magnetic field to form the conductive layer 31 and the photoresist layer 33.
  • the conductive layer 31 is a magnetic organic substance, and the conductive layer 31 is adsorbed on the substrate 20 under the action of the magnetic field, and the photoresist layer 30 covers the conductive layer 31 away from the lining. The surface of the bottom 20.
  • the conductive layer 31 can serve as a gate material layer of the TFT array substrate, and the photoresist layer 30 is a photoresist used for patterning the gate material layer.
  • the conductive layer 31 may be subjected to a yellow light process, and the conductive layer 31 is patterned to form The gate of the TFT array substrate.
  • the magnetic field is generated by the energization coil in an energized state. It is known from the principle of the magnetic field generation of the energized coil. Based on this structure, the degree of control of the magnetic field can be improved. Specifically, the generation and destruction of the magnetic field are controlled by controlling the energization and de-energization of the energized coil, and the direction of the magnetic induction line and the magnetic induction intensity of the magnetic field are controlled by controlling the current through the energized coil. It will be appreciated that in other embodiments, the magnetic field is also generated by a permanent magnet.
  • the energization coil is provided in the loading stage 10. Therefore, the loading platform 10 itself can protect the energized coil, and the energizing coil can be brought closer to the magnetic photoresist material 30, and the current can be reduced while ensuring the magnetic induction intensity. , reduce power consumption, and thus save costs.
  • the magnetic photoresist material 30 is selected and the magnetic field is set, and the magnetic photoresist material 30 and the magnetic field are The magnetic interaction between them realizes the separation of the magnetic photoresist material 30, thereby forming the conductive layer 31 and the photoresist layer 33.
  • the conductive layer 31 and the photoresist layer 33 can be formed by only one coating process, without first forming a conductive layer by means of P VD, and then forming a photoresist layer by coating, which can reduce the process. Processes to increase efficiency and reduce manufacturing costs.

Abstract

Provided are a photoresist coating process and a loading device, wherein the photoresist coating process comprises: providing a loading stage, and placing a substrate to be coated with a photoresist on the loading stage; coating the substrate with a magnetic photoresist material; and generating a magnetic field on one side of the substrate to divide the magnetic photoresist material into a conductive layer and a photoresist layer under the action of the magnetic field. The photoresist coating process and the loading device can reduce the photoresist coating process, improve efficiency, and reduce the manufacturing cost.

Description

光阻涂布工艺与载料装置 技术领域  Photoresist coating process and loading device
[0001] 本发明属于显示面板领域, 尤其涉及一种光阻涂布工艺与载料装置。  [0001] The present invention belongs to the field of display panels, and in particular, to a photoresist coating process and a loading device.
背景技术  Background technique
[0002] 光阻涂布工艺, 属于 TFTCThin Film Transistor, 薄膜晶体管)阵列基板中制程工 艺的一部分。 具体地, 通常的做法是先在衬底上通过 PVD (Physical Vapor Deposition, 物理气相沉积) 或 CVD (Chemical Vapor Deposition, 化学气相沉积 [0002] The photoresist coating process is part of a process in a TFTCThin Film Transistor (TFTCT) array substrate. Specifically, it is common practice to first pass PVD (Physical Vapor Deposition) or CVD (Chemical Vapor Deposition) on the substrate.
) 的方式沉积出导电层, 再于所述导电层上涂布光阻剂以形成光阻层。 然而, P VD或 CVD耗吋较长, 导致光阻涂布工艺存在耗吋长、 效率低的问题。 A conductive layer is deposited in a manner, and a photoresist is coated on the conductive layer to form a photoresist layer. However, P VD or CVD is prolonged, resulting in a long-lasting and inefficient photoresist coating process.
技术问题  technical problem
[0003] 本发明的目的在于克服上述现有技术的不足, 提供一种光阻涂布工艺, 其旨在 解决耗吋长、 效率低的问题。  [0003] The object of the present invention is to overcome the above-mentioned deficiencies of the prior art and to provide a photoresist coating process which aims to solve the problems of long consumption and low efficiency.
问题的解决方案  Problem solution
技术解决方案  Technical solution
[0004] 本发明是这样实现的: The present invention is implemented as follows:
[0005] 一种光阻涂布工艺, 包括步骤: [0005] A photoresist coating process comprising the steps of:
[0006] 提供一载料台, 并将待涂布光阻的衬底置于所述载料台上;  Providing a loading stage, and placing a substrate to be coated with a photoresist on the loading stage;
[0007] 将磁性光阻材料涂布在所述衬底上; 以及 Coating a magnetic photoresist material on the substrate;
[0008] 在所述衬底的一侧产生磁场, 所述磁性光阻材料在所述磁场的作用下分离为导 电层与光阻层。  A magnetic field is generated on one side of the substrate, and the magnetic photoresist material is separated into a conductive layer and a photoresist layer by the magnetic field.
[0009] 可选地, 所述磁性光阻材料为由光阻与磁性有机物形成的混合材料。  [0009] Optionally, the magnetic photoresist material is a mixed material formed of a photoresist and a magnetic organic substance.
[0010] 可选地, 所述磁性光阻材料为由金属氧化物组成核, 由高分子材料组成壳层, 并与有机光阻混合形成的磁性高分子化合物。 [0010] Optionally, the magnetic photoresist material is a magnetic polymer compound composed of a metal oxide core, a shell material composed of a polymer material, and mixed with an organic photoresist.
[0011] 可选地, 所述磁性光阻材料为由高分子材料作为核, 由磁性材料作为壳层, 并 与有机光阻混合形成的磁性高分子化合物。  [0011] Optionally, the magnetic photoresist material is a magnetic polymer compound formed by using a polymer material as a core, a magnetic material as a shell layer, and mixing with an organic photoresist.
[0012] 可选地, 所述磁性光阻材料在所述磁场的作用下分离后, 所述导电层在所述磁 场的作用下被吸附在所述衬底上, 所述光阻层覆盖所述导电层远离所述衬底的 表面。 [0012] Optionally, after the magnetic photoresist material is separated by the magnetic field, the conductive layer is in the magnetic The substrate is adsorbed on the substrate, and the photoresist layer covers the conductive layer away from the surface of the substrate.
[0013] 可选地, 所述磁场通过通电线圈在通电状态下产生。  [0013] Optionally, the magnetic field is generated by an energized coil in an energized state.
[0014] 可选地, 所述通电线圈设于所述载料台内。 [0014] Optionally, the energizing coil is disposed in the loading platform.
[0015] 本发明还提供一种用于光阻涂布工艺的载料装置, 所述载料装置包括所述载料 台, 所述载料台包括设于所述载料台内用于产生磁场的通电线圈。  [0015] The present invention also provides a loading device for a photoresist coating process, the loading device includes the loading platform, and the loading platform includes a loading station for generating The energized coil of the magnetic field.
[0016] 可选地, 所述载料台包括设于所述载料台上用于防止所述衬底滑动的限位结构 [0016] Optionally, the loading platform includes a limiting structure disposed on the loading platform for preventing the substrate from sliding
[0017] 可选地, 所述限位结构为夹具。 [0017] Optionally, the limiting structure is a clamp.
发明的有益效果  Advantageous effects of the invention
有益效果  Beneficial effect
[0018] 基于本发明结构可知, 该光阻涂布工艺中, 由于选用所述磁性光阻材料并设置 所述磁场, 通过所述磁性光阻材料与所述磁场之间的磁性作用, 实现磁性光阻 材料的分离, 从而形成导电层与光阻层。 这个过程中, 导电层与光阻层仅需要 一次涂布工艺即可形成, 而无需先通过 PVD的方式来形成导电层, 再通过涂布 的方式形成光阻层, 能够减少制程上的工序, 提高效率, 降低制造成本。  [0018] According to the structure of the present invention, in the photoresist coating process, since the magnetic photoresist material is selected and the magnetic field is set, magnetic properties are realized by magnetic interaction between the magnetic photoresist material and the magnetic field. The photoresist is separated to form a conductive layer and a photoresist layer. In this process, the conductive layer and the photoresist layer can be formed by only one coating process, and the conductive layer can be formed by PVD first, and then the photoresist layer can be formed by coating, thereby reducing the process on the process. Improve efficiency and reduce manufacturing costs.
对附图的简要说明  Brief description of the drawing
附图说明  DRAWINGS
[0019] 为了更清楚地说明本发明实施例中的技术方案, 下面将对实施例中所需要使用 的附图作简单地介绍, 显而易见地, 下面描述中的附图仅仅是本发明的一些实 施例, 对于本领域普通技术人员来讲, 在不付出创造性劳动的前提下, 还可以 根据这些附图获得其他的附图。  [0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings to be used in the embodiments will be briefly described below. Obviously, the drawings in the following description are only some implementations of the present invention. For example, other drawings may be obtained from those of ordinary skill in the art in light of the inventive work.
[0020] 图 1是本发明具体实施方式提供的光阻涂布工艺的流程图; 1 is a flow chart of a photoresist coating process provided by an embodiment of the present invention;
[0021] 图 2是本发明具体实施方式提供的光阻涂布工艺中步骤 S110中载料台及衬底的 剖视图; 2 is a cross-sectional view of the loading stage and the substrate in step S110 in the photoresist coating process according to an embodiment of the present invention;
[0022] 图 3是本发明具体实施方式提供的光阻涂布工艺中步骤 S120中载料台、 衬底及 磁性光阻材料的剖视图;  3 is a cross-sectional view of a loading stage, a substrate, and a magnetic photoresist material in step S120 in the photoresist coating process according to an embodiment of the present invention;
[0023] 图 4是本发明具体实施方式提供的光阻涂布工艺中步骤 S130中载料台、 衬底、 导电层及光阻层的剖视图; 4 is a loading stage, a substrate, and a substrate in step S130 in the photoresist coating process according to an embodiment of the present invention. a cross-sectional view of the conductive layer and the photoresist layer;
附图标号说明:  Description of the reference numerals:
[表 1]  [Table 1]
Figure imgf000004_0001
本发明的实施方式
Figure imgf000004_0001
Embodiments of the invention
[0025] 下面详细描述本发明的实施例, 所述实施例的示例在附图中示出, 其中自始至 终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。 下 面通过参考附图描述的实施例是示例性的, 旨在用于解释本发明, 而不能理解 为对本发明的限制。  The embodiments of the present invention are described in detail below, and the examples of the embodiments are illustrated in the drawings, wherein the same or similar reference numerals are used to refer to the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the drawings are intended to be illustrative of the invention and are not to be construed as limiting.
[0026] 在本发明的描述中, 需要理解的是, 术语"长度"、 "宽度"、 "上"、 "下"、 "前" 、 "后"、 "左"、 "右"、 "竖直"、 "水平"、 "顶"、 "底" "内"和"外"等指示的方位或 位置关系为基于附图所示的方位或位置关系, 仅是为了便于描述本发明和简化 描述, 而不是指示或暗示所指的装置或元件必须具有特定的方位、 以特定的方 位构造和操作, 因此不能理解为对本发明的限制。  In the description of the present invention, it is to be understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical" The orientation or positional relationship of the indications such as "directly", "horizontal", "top", "bottom", "inside" and "outside" is based on the orientation or positional relationship shown in the drawings, for convenience of description of the present invention and simplified description. It is not intended to be a limitation or limitation of the invention.
[0027] 此外, 术语"第一"、 "第二 "仅用于描述目的, 而不能理解为指示或暗示相对重 要性或者隐含指明所指示的技术特征的数量。 由此, 限定有 "第一"、 "第二 "的特 征可以明示或者隐含地包括一个或者更多个该特征。 在本发明的描述中, "多个" 的含义是两个或两个以上, 除非另有明确具体的限定。  In addition, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless specifically defined otherwise.
[0028] 在本发明中, 除非另有明确的规定和限定, 术语"安装"、 "相连"、 "连接"、 "固 定"等术语应做广义理解, 例如, 可以是固定连接, 也可以是可拆卸连接, 或成 一体; 可以是机械连接, 也可以是电连接; 可以是直接相连, 也可以通过中间 媒介间接相连, 可以是两个元件内部的连通或两个元件的相互作用关系。 对于 本领域的普通技术人员而言, 可以根据具体情况理解上述术语在本发明中的具 体含义。 [0028] In the present invention, the terms "installation", "connected", "connected", "fixed" and the like should be understood broadly, and may be, for example, a fixed connection or a Removable connection, or integrated; can be mechanical connection or electrical connection; it can be directly connected or indirectly connected through an intermediate medium, which can be the internal connection of two elements or the interaction of two elements. For The specific meanings of the above terms in the present invention can be understood by those skilled in the art on a case-by-case basis.
[0029] 本发明第一实施例提供一种光阻涂布工艺。 可以理解, 该光阻涂布工艺可应用 于多种领域。 为方便读者理解, 本文中将以在形成 TFT阵列基板中的栅极的过程 作为例举。 然而需要说明的是, 本发明具体实施方式中的光阻涂布工艺的适用 范围并非局限于用于形成 TFT阵列基板中的栅极。 请参阅图 1, 该光阻涂布工艺 包括如下步骤: [0029] A first embodiment of the present invention provides a photoresist coating process. It can be understood that the photoresist coating process can be applied to various fields. For the convenience of the reader, the process of forming the gate electrode in the TFT array substrate will be exemplified herein. It should be noted, however, that the applicability of the photoresist coating process in the specific embodiment of the present invention is not limited to the gate electrode used in forming the TFT array substrate. Referring to FIG. 1, the photoresist coating process includes the following steps:
[0030] 步骤 S110、 请一并参阅图 2, 提供一载料台 10, 并将待涂布光阻的衬底 20置于 所述载料台 10上。  [0030] Step S110, referring to FIG. 2, a loading stage 10 is provided, and the substrate 20 to be coated with the photoresist is placed on the loading table 10.
[0031] 在本实施方式中, 所述衬底 20为 TFT阵列基板中的衬底。 该衬底 20可以是硬质 材料 (如玻璃、 树脂等), 亦可以是柔性材料 (如聚酰亚胺等)。  In the present embodiment, the substrate 20 is a substrate in a TFT array substrate. The substrate 20 may be a hard material (e.g., glass, resin, etc.) or a flexible material (e.g., polyimide, etc.).
[0032] 在本实施方式中, 所述载料台 10为硬质的材料制成。 所述载料台 10用于承载所 述衬底 20。 所述载料台 10可包括设于所述载料台 10上的限位结构 (图中未示出)。 所述限位结构用于防止所述衬底 20发生平移。 所述限位结构可以为凸起设置的 限位凸块, 也可以为夹具。 优选地, 所述限位结构采用夹具。 由于夹具可以适 用于多种尺寸的衬底 20, 这样有利于提高所述限位结构的适用性。  [0032] In the present embodiment, the loading stage 10 is made of a hard material. The loading station 10 is used to carry the substrate 20. The loading platform 10 can include a limiting structure (not shown) disposed on the loading platform 10. The stop structure serves to prevent translation of the substrate 20. The limiting structure may be a limiting protrusion provided by the protrusion or a clamp. Preferably, the limiting structure adopts a clamp. Since the jig can be applied to the substrate 20 of various sizes, it is advantageous to improve the applicability of the limit structure.
[0033] 步骤 S120、 请一并参阅图 3, 将磁性光阻材料 30涂布在所述衬底 20上。  [0033] Step S120, referring to FIG. 3 together, a magnetic photoresist material 30 is coated on the substrate 20.
[0034] 具体地, 所述磁性光阻材料 30为由光阻与磁性有机物形成的混合材料, 且该混 合材料在磁性的作用下可分离成导电层与光阻层的双层结构。 在本实施方式中 , 所述磁性光阻材料 30可以是由金属氧化物 (如铁、 钴、 镍等氧化物)组成核, 由 高分子材料组成壳层, 并与有机光阻混合形成的磁性高分子化合物, 亦可以是 由高分子材料作为核, 由磁性材料作为壳层, 并与有机光阻混合形成的磁性高 分子化合物。  [0034] Specifically, the magnetic photoresist material 30 is a mixed material formed of a photoresist and a magnetic organic substance, and the mixed material can be separated into a two-layer structure of a conductive layer and a photoresist layer by magnetic action. In this embodiment, the magnetic photoresist material 30 may be a core composed of a metal oxide (such as an oxide such as iron, cobalt, or nickel), a shell layer composed of a polymer material, and a magnetic body formed by mixing with an organic photoresist. The polymer compound may be a magnetic polymer compound formed by mixing a polymer material as a core, a magnetic material as a shell layer, and an organic photoresist.
[0035] 在步骤 S120中, 可利用常规的涂布喷头来将所述磁性光阻材料 30涂布到所述衬 底 20上。 如此可充分利用现有的设备, 而不需要专门设置新的涂布装置来涂布 , 有利于降低成本。  [0035] In step S120, the magnetic photoresist material 30 may be applied to the substrate 20 using a conventional coating nozzle. In this way, the existing equipment can be fully utilized without special setting of a new coating device for coating, which is advantageous in reducing costs.
[0036] 步骤 S130、 请一并参阅图 4, 在所述衬底 20的一侧产生磁场, 以将所述磁性光 阻材料 30分离为导电层 31与光阻层 33。 [0037] 在本实施方式中, 所述磁场用于产生驱动所述磁性光阻材料 30中的磁性有机物 产生向所述载料台 10—侧运动的磁力。 所述磁性光阻材料 30在所述磁场的作用 下分离形成导电层 31与光阻层 33。 可以理解, 所述导电层 31为磁性有机物, 所 述导电层 31在所述磁场的作用下被吸附在所述衬底 20上, 所述光阻层 30覆盖所 述导电层 31远离所述衬底 20的表面。 [0036] Step S130, referring to FIG. 4, a magnetic field is generated on one side of the substrate 20 to separate the magnetic photoresist material 30 into the conductive layer 31 and the photoresist layer 33. In the present embodiment, the magnetic field is used to generate a magnetic force that drives the magnetic organic matter in the magnetic photoresist material 30 to move toward the side of the loading stage 10. The magnetic photoresist material 30 is separated by the magnetic field to form the conductive layer 31 and the photoresist layer 33. It can be understood that the conductive layer 31 is a magnetic organic substance, and the conductive layer 31 is adsorbed on the substrate 20 under the action of the magnetic field, and the photoresist layer 30 covers the conductive layer 31 away from the lining. The surface of the bottom 20.
[0038] 在本实施方式中, 所述导电层 31可作为 TFT阵列基板的栅极材料层, 所述光阻 层 30为对所述栅极材料层进行图案化吋使用的光阻。 在 TFT阵列基板的制程中, 在所述磁性光阻材料 30分离为导电层 31与光阻层 33后, 可对所述导电层 31进行 黄光制程, 将所述导电层 31图案化以形成 TFT阵列基板的栅极。  In the present embodiment, the conductive layer 31 can serve as a gate material layer of the TFT array substrate, and the photoresist layer 30 is a photoresist used for patterning the gate material layer. In the process of the TFT array substrate, after the magnetic photoresist material 30 is separated into the conductive layer 31 and the photoresist layer 33, the conductive layer 31 may be subjected to a yellow light process, and the conductive layer 31 is patterned to form The gate of the TFT array substrate.
[0039] 在本实施例中, 所述磁场由通电线圈在通电状态下产生。 根据通电线圈的磁场 产生原理可知。 基于此结构, 可以提高对所述磁场的控制度。 具体地, 通过控 制通电线圈的通电和断电来控制所述磁场的产生和消灭, 而通过控制经通电线 圈的电流来控制所述磁场的磁感线方向以及磁感强度。 可以理解, 在其他实施 例中, 所述磁场也通过永磁体产生。  [0039] In the present embodiment, the magnetic field is generated by the energization coil in an energized state. It is known from the principle of the magnetic field generation of the energized coil. Based on this structure, the degree of control of the magnetic field can be improved. Specifically, the generation and destruction of the magnetic field are controlled by controlling the energization and de-energization of the energized coil, and the direction of the magnetic induction line and the magnetic induction intensity of the magnetic field are controlled by controlling the current through the energized coil. It will be appreciated that in other embodiments, the magnetic field is also generated by a permanent magnet.
[0040] 在本实施方式中, 所述通电线圈设于所述载料台 10内。 由此, 所述载料台 10本 身可对所述通电线圈起到保护作用, 且能够让所述通电线圈更靠近所述磁性光 阻材料 30, 可以在保证磁感强度的情况下, 降低电流, 减少耗电, 进而节约成 本。  In the present embodiment, the energization coil is provided in the loading stage 10. Therefore, the loading platform 10 itself can protect the energized coil, and the energizing coil can be brought closer to the magnetic photoresist material 30, and the current can be reduced while ensuring the magnetic induction intensity. , reduce power consumption, and thus save costs.
[0041] 基于上述可知, 该本发明具体实施方式所提供的光阻涂布工艺中, 由于选用所 述磁性光阻材料 30并设置所述磁场, 通过所述磁性光阻材料 30与所述磁场之间 的磁性作用, 实现磁性光阻材料 30的分离, 从而形成导电层 31与光阻层 33。 这 个过程中, 导电层 31与光阻层 33仅需要一次涂布工艺即可形成, 而无需先通过 P VD的方式来形成导电层, 再通过涂布的方式形成光阻层, 能够减少制程上的工 序, 提高效率, 降低制造成本。  [0041] Based on the above, in the photoresist coating process provided by the embodiment of the present invention, the magnetic photoresist material 30 is selected and the magnetic field is set, and the magnetic photoresist material 30 and the magnetic field are The magnetic interaction between them realizes the separation of the magnetic photoresist material 30, thereby forming the conductive layer 31 and the photoresist layer 33. In this process, the conductive layer 31 and the photoresist layer 33 can be formed by only one coating process, without first forming a conductive layer by means of P VD, and then forming a photoresist layer by coating, which can reduce the process. Processes to increase efficiency and reduce manufacturing costs.
[0042] 以上仅为本发明的较佳实施例而已, 并不用以限制本发明, 凡在本发明的精神 和原则之内所作的任何修改、 等同替换或改进等, 均应包含在本发明的保护范 围之内。  The above are only the preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent substitutions or improvements made within the spirit and principles of the present invention are included in the present invention. Within the scope of protection.

Claims

权利要求书 Claim
[权利要求 1] 一种光阻涂布工艺, 其特征在于, 包括步骤:  [Claim 1] A photoresist coating process, comprising the steps of:
提供一载料台, 并将待涂布光阻的衬底置于所述载料台上; 将磁性光阻材料涂布在所述衬底上; 以及  Providing a loading stage, and placing a substrate to be coated with a photoresist on the loading stage; coating a magnetic photoresist material on the substrate;
在所述衬底的一侧产生磁场, 所述磁性光阻材料在所述磁场的作用下 分离为导电层与光阻层。  A magnetic field is generated on one side of the substrate, and the magnetic photoresist material is separated into a conductive layer and a photoresist layer by the magnetic field.
[权利要求 2] 如权利要求 1所述的光阻涂布工艺, 其特征在于, 所述磁性光阻材料 为由光阻与磁性有机物形成的混合材料。  [Claim 2] The photoresist coating process according to claim 1, wherein the magnetic photoresist material is a mixed material formed of a photoresist and a magnetic organic substance.
[权利要求 3] 如权利要求 2所述的光阻涂布工艺, 其特征在于, 所述磁性光阻材料 为由金属氧化物组成核, 由高分子材料组成壳层, 并与有机光阻混合 形成的磁性高分子化合物。 [Claim 3] The photoresist coating process according to claim 2, wherein the magnetic photoresist material is composed of a metal oxide core, a shell layer composed of a polymer material, and mixed with an organic photoresist. A magnetic polymer compound formed.
[权利要求 4] 如权利要求 2所述的光阻涂布工艺, 其特征在于, 所述磁性光阻材料 为由高分子材料作为核, 由磁性材料作为壳层, 并与有机光阻混合形 成的磁性高分子化合物。 [Claim 4] The photoresist coating process according to claim 2, wherein the magnetic photoresist material is formed of a polymer material as a core, a magnetic material as a shell layer, and mixed with an organic photoresist. Magnetic polymer compound.
[权利要求 5] 如权利要求 1所述的光阻涂布工艺, 其特征在于, 所述磁性光阻材料 在所述磁场的作用下分离后, 所述导电层在所述磁场的作用下被吸附 在所述衬底上, 所述光阻层覆盖所述导电层远离所述衬底的表面。 [Claim 5] The photoresist coating process according to claim 1, wherein after the magnetic photoresist material is separated by the magnetic field, the conductive layer is subjected to the magnetic field Adsorbed on the substrate, the photoresist layer covering the conductive layer away from the surface of the substrate.
[权利要求 6] 如权利要求 1所述的光阻涂布工艺, 其特征在于, 所述磁场通过通电 线圈在通电状态下产生。 [Claim 6] The photoresist coating process according to claim 1, wherein the magnetic field is generated by an energization coil in an energized state.
[权利要求 7] 如权利要求 6所述的光阻涂布工艺, 其特征在于, 所述通电线圈设于 所述载料台内。 The photoresist coating process according to claim 6, wherein the energization coil is provided in the loading stage.
[权利要求 8] —种用于如权利要求 1至 8中任一项所述的光阻涂布工艺的载料装置, 其特征在于, 所述载料装置包括所述载料台, 所述载料台包括设于所 述载料台内用于产生磁场的通电线圈。  [Claim 8] A loading device for use in a photoresist coating process according to any one of claims 1 to 8, wherein the loading device includes the loading station, The loading stage includes an energized coil disposed in the loading stage for generating a magnetic field.
[权利要求 9] 如权利要求 8所述的载料装置, 其特征在于, 所述载料台包括设于所 述载料台上用于防止所述衬底滑动的限位结构。  [Claim 9] The loading device according to claim 8, wherein the loading stage includes a stopper structure provided on the loading stage for preventing the substrate from sliding.
[权利要求 10] 如权利要求 9所述的载料装置, 其特征在于, 所述限位结构为夹具。  [Claim 10] The loading device according to claim 9, wherein the limiting structure is a jig.
PCT/CN2016/112998 2016-12-29 2016-12-29 Photoresist coating process and loading device WO2018119870A1 (en)

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