WO2018118082A1 - Revêtements graphitiques pour dispositifs à circuits intégrés - Google Patents
Revêtements graphitiques pour dispositifs à circuits intégrés Download PDFInfo
- Publication number
- WO2018118082A1 WO2018118082A1 PCT/US2016/068512 US2016068512W WO2018118082A1 WO 2018118082 A1 WO2018118082 A1 WO 2018118082A1 US 2016068512 W US2016068512 W US 2016068512W WO 2018118082 A1 WO2018118082 A1 WO 2018118082A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- liner
- conductive
- graphene
- conductive material
- insulating material
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
- H01L23/53266—Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76844—Bottomless liners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
Abstract
L'invention concerne des revêtements graphitiques pour des dispositifs à circuit intégré (IC), ainsi que des dispositifs et des procédés associés. Par exemple, l'invention concerne des revêtements qui comprennent du graphène ayant un gradient de qualité, des revêtements multicouches (par exemple, comprenant des couches de métal et de graphène), et des revêtements qui relient les parois latérales d'un trou d'interconnexion tout en laissant un fond du trou d'interconnexion ouvert pour un contact direct avec une structure conductrice inférieure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2016/068512 WO2018118082A1 (fr) | 2016-12-23 | 2016-12-23 | Revêtements graphitiques pour dispositifs à circuits intégrés |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2016/068512 WO2018118082A1 (fr) | 2016-12-23 | 2016-12-23 | Revêtements graphitiques pour dispositifs à circuits intégrés |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2018118082A1 true WO2018118082A1 (fr) | 2018-06-28 |
Family
ID=62627654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2016/068512 WO2018118082A1 (fr) | 2016-12-23 | 2016-12-23 | Revêtements graphitiques pour dispositifs à circuits intégrés |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2018118082A1 (fr) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030129826A1 (en) * | 2000-03-07 | 2003-07-10 | Werkhoven Christiaan J. | Graded thin films |
US20040014320A1 (en) * | 2002-07-17 | 2004-01-22 | Applied Materials, Inc. | Method and apparatus of generating PDMAT precursor |
US20130015581A1 (en) * | 2011-07-13 | 2013-01-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for high performance interconnect |
US20130113102A1 (en) * | 2011-11-08 | 2013-05-09 | International Business Machines Corporation | Semiconductor interconnect structure having a graphene-based barrier metal layer |
US20140145332A1 (en) * | 2012-11-26 | 2014-05-29 | Globalfoundries Inc. | Methods of forming graphene liners and/or cap layers on copper-based conductive structures |
-
2016
- 2016-12-23 WO PCT/US2016/068512 patent/WO2018118082A1/fr active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030129826A1 (en) * | 2000-03-07 | 2003-07-10 | Werkhoven Christiaan J. | Graded thin films |
US20040014320A1 (en) * | 2002-07-17 | 2004-01-22 | Applied Materials, Inc. | Method and apparatus of generating PDMAT precursor |
US20130015581A1 (en) * | 2011-07-13 | 2013-01-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for high performance interconnect |
US20130113102A1 (en) * | 2011-11-08 | 2013-05-09 | International Business Machines Corporation | Semiconductor interconnect structure having a graphene-based barrier metal layer |
US20140145332A1 (en) * | 2012-11-26 | 2014-05-29 | Globalfoundries Inc. | Methods of forming graphene liners and/or cap layers on copper-based conductive structures |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11532584B2 (en) | Package substrate with high-density interconnect layer having pillar and via connections for fan out scaling | |
US11450798B2 (en) | Interconnects for quantum dot devices | |
US20190044049A1 (en) | Gate arrangements in quantum dot devices | |
US20190058043A1 (en) | Transistor gate-channel arrangements | |
US20190348540A1 (en) | Vertical transistor devices and techniques | |
US20200294969A1 (en) | Stacked transistors with dielectric between source/drain materials of different strata | |
US20190267319A1 (en) | Reconfigurable interconnect arrangements using thin-film transistors | |
US11552104B2 (en) | Stacked transistors with dielectric between channels of different device strata | |
TW202119594A (zh) | 用以建立三維記憶體和邏輯並具有背側接點的電晶體 | |
US20190311984A1 (en) | Self-aligned via | |
US10790233B2 (en) | Package substrates with integral devices | |
US11024538B2 (en) | Hardened plug for improved shorting margin | |
US11710765B2 (en) | High aspect ratio non-planar capacitors formed via cavity fill | |
US10411068B2 (en) | Electrical contacts for magnetoresistive random access memory devices | |
US20220406907A1 (en) | Metallic sealants in transistor arrangements | |
EP3709343A1 (fr) | Transistors empilés ayant des strates de dispositif comportant différentes largeurs de canal | |
US11018054B2 (en) | Integrated circuit interconnects | |
US11276634B2 (en) | High density package substrate formed with dielectric bi-layer | |
US11011481B2 (en) | Configurable resistor | |
US11037802B2 (en) | Package substrate having copper alloy sputter seed layer and high density interconnects | |
US11652045B2 (en) | Via contact patterning method to increase edge placement error margin | |
WO2018118081A1 (fr) | Revêtements graphitiques pour dispositifs à circuits intégrés | |
WO2018111289A1 (fr) | Interconnexions fournies par dépôt à base d'espaceur métallique soustractif | |
WO2018118082A1 (fr) | Revêtements graphitiques pour dispositifs à circuits intégrés | |
US20210202275A1 (en) | Tools and methods for subtractive metal patterning |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16924349 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 16924349 Country of ref document: EP Kind code of ref document: A1 |