WO2018107876A1 - 一类四元钼/钨碲酸盐晶体的应用及器件 - Google Patents

一类四元钼/钨碲酸盐晶体的应用及器件 Download PDF

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WO2018107876A1
WO2018107876A1 PCT/CN2017/104968 CN2017104968W WO2018107876A1 WO 2018107876 A1 WO2018107876 A1 WO 2018107876A1 CN 2017104968 W CN2017104968 W CN 2017104968W WO 2018107876 A1 WO2018107876 A1 WO 2018107876A1
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acousto
optic
crystal
crystals
tungsten
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陶绪堂
高泽亮
孙友轩
吴倩
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Shandong University
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Shandong University
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/0009—Materials therefor
    • G02F1/0072—Mechanical, acoustic, electro-elastic, magneto-elastic properties
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/11—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/117—Q-switching using intracavity acousto-optic devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/164—Solid materials characterised by a crystal matrix garnet
    • H01S3/1643—YAG

Definitions

  • the invention relates to the application and device of quaternary molybdenum/tungsten silicate crystals, especially in high performance acousto-optic devices, and belongs to the field of materials and photoelectric functional devices.
  • the acousto-optic effect was discovered as early as the 1930s, and most of the acousto-optic medium used was an isotropic medium such as water and glass, which is known as an "ultrasonic grating."
  • the changes in the frequency and direction of the light due to the action of the acousto-optic light are small and have not received sufficient attention before the laser was introduced.
  • the emergence of lasers in the 1960s promoted the development of acousto-optic devices. Because the laser has good monochromaticity and directivity, high brightness, and the characteristics of the laser beam energy can be fully focused into a diffraction-limited spot due to coherent light, the laser can be quickly and efficiently controlled by the interaction of sound and light.
  • the frequency, direction and intensity of the beam greatly expand the application range of the laser, thus promoting the development of acousto-optic devices.
  • the performance of acousto-optic devices has been rapidly improved, and no matter what aspects of the control laser beam
  • the characteristics of the acousto-optic device used, the structure of the device and the manufacturing process are basically the same. As long as the design is considered, it can adapt to various needs, and even one device can simultaneously perform various functions. This is other optoelectronics. The device is far behind.
  • acousto-optic materials are liquid, glass and single crystal.
  • water is considered to be a good acousto-optic interaction medium, but its sound attenuation is large, and the effects on sound waves and heat are easily disturbed and cannot maintain stable optical properties, thereby losing the sense of use.
  • Glass (SiO 2 ) is one of the most common acousto-optic medium materials. The acoustic attenuation of glass is large, and the transmission band is difficult to cover the mid-infrared band. At the same time, it is difficult to obtain transparent glass with a refractive index greater than 2.1 in the visible region.
  • the light coefficient is small, so it is only suitable for acousto-optic devices with audio frequencies below 100MHz.
  • the acousto-optic crystals used in the early days are LiNbO 3 , LiTaO 3 , ⁇ -Al 2 O 3 and R 3 Al 5 O 12 , etc., but the acousto-optic properties of these crystals are relatively poor.
  • the c-axis of PbMoO 4 coincides with the Y-axis, so the acousto-optic diffraction efficiency is independent of the polarization of incident light, and is widely used in acousto-optic modulators and deflectors, and also in high-resolution acousto-optic deflectors.
  • this crystal contains a toxic element Pb and has a small hardness (a Mohs hardness of about 3), which is not easy to process.
  • Chinese patent document CN 1313517A (application number: 01112800.3) disclosed the acousto-optic modulator with one kind of rare earth ion-modified PbWO4 production, La 3+: PWO or Y 3+: PWO Alternatively or TeO 2 crystal produced PMO Acousto-optic modulator, the device design and structure are basically unchanged, the performance of the modulator is meaningfully improved, especially the working band extends to the near-ultraviolet region by about 60-70 nm, and has good anti-irradiation capability.
  • this patent document improves the performance of the acousto-optic device of the PWO crystal, the existence of the toxic element Pb in the crystal has not been solved.
  • Cipheral Patent Document CN105068280A (Application No.: 201510425255.7) discloses the use and sound of a potassium fluoroborate potassium crystal material (including potassium fluoroborate, bismuth fluoroborate and bismuth fluoroborate) Optical device.
  • a potassium fluoroborate potassium crystal material including potassium fluoroborate, bismuth fluoroborate and bismuth fluoroborate
  • the use of the potassium fluoroborate potassium group crystal material includes: as an acousto-optic medium in an acousto-optic device; wherein light transmitted into the acousto-optic medium is ultraviolet light; and the acousto-optic device generates The direction in which the acoustic wave is transmitted into the acousto-optic medium is: a c-axis direction of the potassium fluoroborate potassium group crystal; and a direction in which the ultraviolet light is transmitted into the acousto-optic medium is perpendicular to the c-axis direction.
  • the potassium fluoroborate potassium group crystals involved in the patent document have certain difficulties in growing large-sized, high-quality single crystals, and the light transmission band of such materials cannot cover the mid-infrared band, and the sound and light effect is small, and it is difficult to obtain actual application.
  • acousto-optic devices especially the transmission band.
  • Acoustic materials with excellent performance are the basis of high performance acousto-optic devices.
  • the single crystal material is the preferred direction for the development of acousto-optic materials due to its large quality factor M 2 , low sound attenuation and good light transmission properties.
  • M 2 quality factor
  • For good acousto-optic materials it not only has high sound and light interaction properties, but also has good optical and acoustic properties.
  • the requirements of the optical performance of the acousto-optic device are basically the same as those of the general optical device, that is, 1) the light transmittance is high and the refractive index is high in the wavelength range of use; 2) chemical stability High, long mechanical life; 3) high light damage threshold, easy to machine; 4) small temperature coefficient of each physical constant; 5) crystal growth technology that can obtain high quality large crystal, good acoustic performance of the material It is characterized by low sound attenuation, small nonlinear acoustic coefficient and small temperature coefficient of sound velocity; 6) heavy ions, and high crystal density.
  • the present invention provides a class of applications and devices for quaternary molybdenum/tungsten silicate crystals.
  • quaternary molybdenum/tungsten silicate crystal as an acousto-optic material is a quaternary oxide containing both cerium (Te) and tungsten (W) or molybdenum (Mo).
  • the quaternary molybdenum/tungsten silicate is: ⁇ -BaTeMo 2 O 9 , ⁇ -BaTeMo 2 O 9 , Cs 2 TeMo 3 O 12 , Cs 2 TeW 3 O 12 , Na 2 TeW 2 O 9 , CdTeMoO 6, etc., but not limited to the above listed materials.
  • the quaternary molybdenum/tungsten silicate crystal is used as an acousto-optic medium, and an acousto-optic device such as an acousto-optic modulator, an acousto-optic deflector, an acousto-optic filter,
  • the acousto-optic device comprises an acousto-optic medium, a piezoelectric transducer and an impedance matching network, and the acousto-optic medium is the above-mentioned quaternary molybdenum/tungsten silicate crystal.
  • the RF power signal generated by the driver is added to the acousto-optic device, and the piezoelectric transducer converts the signal into an ultrasonic signal and is introduced into the acousto-optic medium to form an index grating, when the laser beam is When passing at a certain angle, the laser beam is diffracted due to the interaction of sound and light.
  • the Bragg diffraction angle ⁇ b ⁇ f / (2V)
  • ⁇ is the operating wavelength
  • f is the operating frequency
  • V is the longitudinal acoustic velocity in the crystal.
  • the selection of the light-passing direction of the acousto-optic medium is designed and optimized by the elastic coefficient of the crystal anisotropy and the propagation characteristics of the light.
  • the direction in which the piezoelectric transducer is disposed takes into account the interaction of the acoustic wave with the acousto-optic medium.
  • the quaternary molybdenum/tungstate silicate crystals of the present invention can be grown by a conventional growth method in the art, and after the completion of the growth, mechanical processing such as cutting and polishing is carried out in accordance with a conventional method in the art.
  • the acousto-optic device of the present invention can be assembled by conventional methods in the art.
  • the invention uses a novel type of molybdenum/tungsten-ruthenium quaternary compound as an acousto-optic medium to produce a high performance acousto-optic device
  • the materials involved are non-toxic and easy to obtain high-quality, large-size single crystals.
  • the physical properties of the crystals meet almost all the requirements of high-quality acousto-optic materials, and have important potential application value. It is worth noting that the light transmission band of such materials can cover 3-5um. These materials are rich in crystal structure, covering high, medium and low crystal systems, and can be selected according to practical application requirements.
  • Figure 1 is a diffraction schematic diagram of an acousto-optic device of the present invention
  • FIG. 2 is a Q-switched optical path diagram of an acousto-optic device according to Embodiment 1-6 of the present invention.
  • Fig. 3 is a view showing the output of the Q-switched laser light according to the first embodiment of the present invention.
  • Fig. 4 is a view showing the output of the Q-switched laser of the embodiment 2 of the present invention.
  • Fig. 5 is a view showing the output of the Q-switched laser of the embodiment 3 of the present invention.
  • Fig. 6 is a view showing the output of the Q-switched laser of the fourth embodiment of the present invention.
  • Fig. 7 is a view showing the output of the Q-switched laser of the fifth embodiment of the present invention.
  • Fig. 8 is a view showing the output of the Q-switched laser of the sixth embodiment of the present invention.
  • ⁇ -BaTeMo 2 O 9 crystal refers to Chinese patent document CN102031563A
  • ⁇ -BaTeMo 2 O 9 crystal refers to Chinese patent document CN1958883A
  • Cs 2 TeMo 3 O 12 crystal refers to Chinese patent document CN102011189A
  • Cs 2 TeW 3 O 12 crystal refers to China Patent document CN104562204A
  • Example 1 ⁇ -BaTeMo 2 O 9 crystal
  • the ⁇ -BaTeMo 2 O 9 crystal belongs to a biaxial crystal, an orthorhombic system, and a mm2 point group.
  • ⁇ -BaTeMo 2 O 9 crystal has excellent physical and chemical properties such as easy growth of large size, high quality single crystal, crystal without deliquescent, cleavage, moderate hardness (Mohs ⁇ 4.7), easy mechanical processing, and large light damage threshold. .
  • the acousto-optic device consists of an acousto-optic medium, a piezoelectric transducer, and an impedance matching network.
  • Acousto-optic medium selects ⁇ -BaTeMo 2 O 9 crystal, which is selected and optimized according to the crystal acousto-optic coefficient and the propagation characteristics of light in the crystal (in this embodiment, the z-axis direction is selected, and the x-axis direction is applied to the piezoelectric transducer. ).
  • the crystal is polished in the light direction and coated with an optical antireflection film @1064nm.
  • the acousto-optic device is packaged in an aluminum housing.
  • the driver is composed of a signal generating and power amplifying circuit.
  • the working voltage is DC +24V.
  • the "power output” terminal outputs the driving power. It is connected to the optical modulator device with a high-frequency cable, and the modulation signal is input through the "input" terminal.
  • the Q-switch path of the acousto-optic device is as shown in FIG. 2, and the Q-switch path of the acousto-optic device includes the pump source 1, the focusing system 2, and the input connected in sequence.
  • the mirror 3, the laser crystal 4 (Nd: YAG), the acousto-optic modulator 5, and the output mirror 6, the acousto-optic medium of the acousto-optic modulator 5 is an ⁇ -BaTeMo 2 O 9 crystal material.
  • the acousto-optic device forms ultrasonic waves by electro-acoustic conversion to periodically change the refractive index of the modulating medium, acts as a diffraction grating on the incident light, causes diffraction loss, and the Q value decreases, and laser oscillation cannot be formed.
  • the upper energy level reversal particle beam accumulates and reaches the saturation value.
  • the ultrasonic field is suddenly removed, the diffraction effect disappears immediately, the Q value in the cavity increases sharply, the laser oscillation recovers rapidly, and the energy is in the form of giant pulse.
  • the output is shown in Figure 3.
  • the ⁇ -BaTeMo 2 O 9 crystal belongs to a biaxial crystal, a monoclinic system, and a 2-point group.
  • the crystal has a light transmission range of 0.5 to 5 ⁇ m and a transmittance of about 80%.
  • ⁇ -BaTeMo 2 O 9 crystals also have a large size, high quality single crystal, the crystal is not deliquescent, understand reason, moderate hardness (Mohs ⁇ 4.7), easily machined, a large optical damage threshold and the like are easy to grow excellent physical and chemical performance.
  • the ⁇ -BaTeMo 2 O 9 crystal acousto-optic device was similar to that of Example 1. The difference is that in the embodiment, the crystal orientation selects the crystal refractive index main axis Z-axis as the light-passing direction of the acousto-optic device, and the Y-axis pressurization electric transducer. Also in accordance with the laser light path in Figure 2, the laser Q-switched output can be achieved, as shown in Figure 4.
  • the Cs 2 TeMo 3 O 12 crystal belongs to a uniaxial crystal, a hexagonal system, and a 6-point group.
  • Cs 2 TeMo 3 O 12 crystal has excellent physical and chemical properties such as easy growth of large size, high quality single crystal, crystal non-deliquescent, non-cleavable, moderate hardness (Mohs ⁇ 4.7), easy machining, and large light damage threshold. .
  • the Cs 2 TeMo 3 O 12 crystal acousto-optic device was similar to that of Example 1.
  • the crystal light passing direction selects the crystal refractive index Z axis, and the refractive index X axis plus the transducer.
  • laser Q-switched output can be achieved, as shown in Figure 5.
  • the Cs 2 TeW 3 O 12 crystal belongs to a uniaxial crystal, a hexagonal crystal system, and a 6-point group.
  • TeW 3 O 12 crystal structure and properties of Cs 2 and Cs 2 TeMo 3 O 12 crystal-like.
  • the crystal light passing direction is exactly the same as the Cs 2 TeMo 3 O 12 crystal.
  • laser Q-switched output can be achieved, as shown in Figure 6.
  • the CdTeMoO 6 crystal belongs to a uniaxial crystal, a tetragonal system, and a -42 m point group.
  • the crystal has a light transmission range of 0.345-5.40 ⁇ m and a transmittance of about 80%. After the coating, the transmittance exceeds 99%, and the crystal exhibits a large refractive index.
  • CdTeMoO 6 crystal has excellent physical and chemical properties such as easy growth of large size, high quality single crystal, crystal non-deliquesing, moderate hardness, easy processing, excellent thermal stability and chemical stability, and large photodamage threshold.
  • a CdTeMoO 6 crystal acousto-optic device is similar to that of Embodiment 1.
  • the crystal light passing direction selects the crystal refractive index Z axis, the refractive index X plus the transducer.
  • the laser Q-switching output can be realized, as shown in Fig. 7.
  • the Na 2 TeW 2 O 9 crystal belongs to a biaxial crystal, a monoclinic system, and a m point group.
  • the crystal has a light transmission range of 0.45-5.0 ⁇ m and a transmittance of about 80%. After coating, the transmittance exceeds 99%.
  • the Na 2 TeW 2 O 9 crystal has excellent physical and chemical properties such as easy growth of large-sized high-quality single crystals, crystals which are not deliquescent, unclear, moderate hardness, easy mechanical processing, and large light damage threshold.
  • a Na 2 TeW 2 O 9 crystal acousto-optic device was similar to that of Example 1.
  • the crystal light passing direction selects the crystal refractive index Z axis, and the refractive index X axis plus the transducer.
  • the laser Q-switching output can be realized, as shown in Fig. 8.

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Abstract

一类四元钼/钨碲酸盐晶体的应用及器件，四元钼/钨碲酸盐晶体作为声光材料进行应用，四元钼/钨碲酸盐为同时含有碲(Te)以及钨(W)或钼(Mo)的四元氧化物。此类晶体种类丰富，包含高中低对称晶系，无毒，易于获得大尺寸、高质量单晶，并且几乎满足优异声光性能的全部要求。根据晶体声光器件要求和晶体特性，选择不同通光方向和激励源方向制作具有实际应用价值的声光器件，实现了高性能声光调Q激光输出。

Description

一类四元钼/钨碲酸盐晶体的应用及器件 技术领域
本发明涉及四元钼/钨碲酸盐晶体的应用及器件，尤其是在高性能声光器件中的应用，属于材料与光电功能器件领域。
背景技术
声光效应早在20世纪30年代就被发现，所使用的声光介质大部分为各向同性介质，如水和玻璃，这就是众所周知的“超声光栅”。然而，由于声光作用引起的光的频率和方向的变化都很小，在激光问世以前未受到足够的重视。20世纪60年代激光器的出现推动了声光器件的发展。由于激光的单色性和方向性好、亮度高，且因其具有相干光而使激光束能量可以全部聚焦成衍射限大小的光斑等特性，因此利用声光互作用可以快速而有效地控制激光束的频率、方向和强度，大大扩展了激光的应用范围，从而推动了声光器件的发展。在60年代中期到70年代中期，随着一批新型高性能的声光晶体如PbMoO4、TeO2、LiNbO3等的出现，声光器件的性能得到了迅速提高，并且无论控制激光束哪方面的特性，所用声光器件的工作原理、器件结构和制做工艺基本相同，只要在设计上加以一定考虑，就可以适应各种需要，甚至一个器件同时可起到多种功能，这是其他光电子器件望尘莫及的。光波导技术和声表面波技术的发展，促进了表面波声光器件的发展。由于表面声波和导光波均集中在介质表面厚度为波长数量级的薄层内，能量非常集中，因此表面波声光器件只需要很小的驱动功率；同时，表面波声光器件是用平面工艺制作的，工艺比较简单灵活，很容易做出结构复杂的换能器，可以得到比体波器件更大的带宽。近年来，声光器件在光纤通讯、激光寻址、激光打印、激光脉冲、激光稳频、激光稳功、激光传真、激光印刷等领域发挥了重要的应用。
常用的声光材料有液体、玻璃和单晶三大类。液态材料中，水被认为是较好的声光互作用介质，但其声衰减较大，并且对声波和热的作用易产生扰动不能保持稳定的光学性能，从而失去使用意义。玻璃(SiO2)是最普通的声光介质材料之一，玻璃的声衰减大，透光波段难以覆盖中红外波段，同时在可见光谱区，难获得折射率大于2.1的透明玻璃，且其弹光系数小，因此只适用于声频低于100MHz的声光器件。早期使用的声光晶体有LiNbO3、LiTaO3、α-Al2O3和R3Al5O12等，但这些晶体的声光性能都比较差。
目前应用最为广泛的声光晶体主要为TeO2和PbMoO4。其中，TeO2属于四方晶系，是一种具有高品质因数的声光材料，其折射率高(ne＝2.430，no＝2.074)，对可见光透明度高，弹 光系数大，沿[110]方向传播的剪切波的声速慢(0.62×105cm/s)，这种慢剪切波具有高声光优值(M2＝793×10-18s3/g)，在(001)平面沿与X轴成35.9°方向传播的横波具有零温度系数，且其优值也高(M2＝200×10-18s3/g)。可用于要求具有大带宽、高分辨的各向异性声光偏转器和滤波器。但TeO2晶体生长技术复杂、生长成本高，且不易获得高质量的大体块单晶。PbMoO4同样属于四方晶系，具有良好的光学性能，且声衰减系数小。此外，PbMoO4的c轴与Y轴重合，因此声光衍射效率与入射光的偏振无关，被广泛地应用于声光调制器和偏转器，亦可用于高分辨率声光偏转器。但是此晶体含有毒性元素Pb，并且其硬度较小(莫氏硬度约为3)，不易于加工。
中国专利文件CN 1313517A(申请号：01112800.3)公开了一种用稀土离子改性的钨酸铅晶体制作的声光调制器,La3+:PWO或Y3+:PWO替代PMO或TeO2晶体制作声光调制器,器件设计和结构基本不变的前提下,有意义地改进调制器的性能,特别是工作波段向近紫外区延伸约60-70nm,并具有良好的抗辐照能力。该专利文件虽然改进了PWO晶体的声光器件性能，但是尚未解决晶体中含有毒性元素Pb的存在。
中国专利文件CN105068280A(申请号：201510425255.7)公开了一种氟代硼铍酸钾族晶体材料(包括氟代硼铍酸钾、氟代硼铍酸铷和氟代硼铍酸铯)的用途及声光器件。其中，氟代硼铍酸钾族晶体材料的用途，包括：用于作为声光器件中的声光介质；其中，传入所述声光介质的光为紫外光；所述声光器件产生的声波传入所述声光介质的方向为：所述氟代硼铍酸钾族晶体的c轴方向；所述紫外光传入所述声光介质的方向与所述c轴方向垂直。该专利文件中所涉及的氟代硼铍酸钾族晶体在生长大尺寸、高质量单晶存在一定的困难，而且此类材料透光波段不能覆盖中红外波段，声光效应小，难以获得实际应用。
随着激光技术和激光器的发展，特别是中红外激光器的应用，对声光器件的综合性能特别是透光波段提出了更高的要求。性能优异的声光材料是高性能声光器件的基础。单晶材料由于品质因子M2大，声衰减小，透光特性好，是声光材料发展的首选方向。对于良好的声光材料来说，它不仅要具有高的声光互作用性能，而且要具有良好的光学性能和声学性能。通常，人们主要用材料的声光优值(或称声光品质因数)来衡量材料的声光互作用性能的优劣。而声光器件对材料的光学性能的要求与一般光学器件对材料的要求基本相同，即要求：1)在使用光波长范围内，光透过率高，折射率较高；2)化学稳定性高，机械寿命长；3)光损伤阈值高，易于机械加工；4)各物理常数的温度系数要小；5)已建立起能获得高质量大晶体的晶体生长技术，材料的良好的声学性能表现为声衰减低、非线性声学系数小以及声速的温度系数小等；6)含有重离子，以及晶体密度大等。
综上所述，在现有声光原理条件下，声光材料本身的特性决定了声光器件的特性及应用 范围。因此，探索性能优异的声光材料及其器件，满足目前科技发展的需要是目前材料和器件研究领域中的一个热点方向。
发明内容：
针对现有技术的不足，本发明提供一类四元钼/钨碲酸盐晶体的应用及器件。
本发明的技术方案如下：
四元钼/钨碲酸盐晶体作为声光材料的应用，所述的四元钼/钨碲酸盐为同时含有碲(Te)以及钨(W)或钼(Mo)的四元氧化物。
根据本发明，所述的四元钼/钨碲酸盐为：β-BaTeMo2O9、α-BaTeMo2O9、Cs2TeMo3O12、Cs2TeW3O12、Na2TeW2O9、CdTeMoO6等，但不局限于以上列举材料。
根据本发明，所述的四元钼/钨碲酸盐晶体作为声光介质，制作声光器件，如声光调制器、声光偏转器、声光滤波器等。
声光器件，包括声光介质、压电换能器和阻抗匹配网络，所述的声光介质为上述四元钼/钨碲酸盐晶体。
本发明的工作原理：如图1所示，驱动器产生的射频功率信号加入声光器件，压电换能器将此信号转变为超声信号传入声光介质内形成折射率光栅，当激光束以一定角度通过时，由于声光相互作用，激光束发生衍射。其中，布拉格衍射角θb＝λf/(2V)，λ为工作波长，f为工作频率，V为晶体内纵波声速。
根据本发明的声光器件，所述的声光介质的通光方向的选择由晶体各向异性中弹光系数和光的传播特性进行设计和优化。
根据本发明的声光器件，压电换能器的设置方向考虑声波与声光介质的相互作用。
本发明中四元钼/钨碲酸盐晶体可按本领域常规生长方法进行生长，生长完成后按本领域常规方法进行切割和抛光等机械加工。
本发明所述的声光器件可按本领域常规方法进行组装。
本发明的有益效果如下：
本发明以一类新型钼/钨碲四元化合物作为声光介质，制作高性能声光器件。所涉及材料无毒，并且易于获得高质量、大尺寸单晶，晶体物理特性几乎满足所有优质声光材料要求，具有重要的潜在应用价值。值得注意的是此类材料透光波段均可以覆盖3-5um。此类材料晶体结构丰富，覆盖高中低晶系，可以根据实际应用要求进行材料选择。
附图说明
图1是本发明声光器件的衍射原理图。
图2是本发明实施例1-6声光器件调Q光路图。
其中：1、泵浦源，2、聚焦系统，3、输入镜，4、激光晶体，5、声光调制器，6、输出镜。
图3是本发明实施例1调Q激光输出显示图。
图4是本发明实施例2调Q激光输出显示图。
图5是本发明实施例3调Q激光输出显示图。
图6是本发明实施例4调Q激光输出显示图。
图7是本发明实施例5调Q激光输出显示图。
图8是本发明实施例6调Q激光输出显示图。
具体实施方式
下面结合实施例和说明书附图对本发明做详细阐述，但不局限于此。
实施例中所述的晶体均按照现有技术进行制备。
其中：α-BaTeMo2O9晶体参照中国专利文件CN102031563A，β-BaTeMo2O9晶体参照中国专利文件CN1958883A，Cs2TeMo3O12晶体参照中国专利文件CN102011189A,Cs2TeW3O12晶体参照中国专利文件CN104562204A，Na2TeW2O9晶体参照文献Cryst.Growth Des.10(9),4091-4095,2010。
实施例1：α-BaTeMo2O9晶体
α-BaTeMo2O9晶体属于双轴晶，正交晶系，mm2点群。晶体透光范围为0.38-5.53μm，透过率在80％左右，镀膜后的透过率高达99％以上，晶体显示出较大的折射率(nz＝2.42@0.4μm)。α-BaTeMo2O9晶体具有容易生长大尺寸、高质量单晶，晶体不潮解、不解理、硬度适中(Mohs～4.7)、易于进行机械加工、光损伤阈值较大等优异的物理化学性能。
声光器件由声光介质、压电换能器和阻抗匹配网络组成。声光介质选择α-BaTeMo2O9晶体，根据晶体声光系数以及光在晶体中的传播特性进行选择和优化(本实施例中选择z轴方向通光，x轴方向加压电换能器)。晶体通光方向抛光并镀光学增透膜@1064nm。声光器件由铝制外壳封装。
驱动器由信号产生、功率放大电路组成。工作电压为直流+24V，“功率输出”端输出驱动功率，用高频电缆线与光调制器器件相连，通过“输入”端输入调制信号。
如果将本实施例的声光器件应用于激光调Q当中，声光器件调Q光路图如图2所示，声光器件调Q光路包括顺次连接的泵浦源1、聚焦系统2、输入镜3、激光晶体4(Nd:YAG)、声光调制器5和输出镜6，声光调制器5的声光介质为α-BaTeMo2O9晶体材料。声光器件通过电声转换形成超声波使调制介质折射率发生周期性变化，对入射光起衍射栅作用，使之发生衍射损耗，Q值下降，激光振荡不能形成。在光泵激励下其上能级反转粒子束不断积累并 达到饱和值，这时突然撤除超声场，衍射效应立即消失，腔内Q值猛增，激光振荡迅速恢复，其能量以巨脉冲形式输出，如图3所示。
实施例2：β-BaTeMo2O9晶体
β-BaTeMo2O9晶体属于双轴晶，单斜晶系，2点群。晶体透光范围为0.5-5μm，透过率在80％左右，镀膜后的透过率高达99％以上,晶体显示出较大的折射率(nz＝2.32@0.4μm)。β-BaTeMo2O9晶体同样具有容易生长大尺寸、高质量单晶，晶体不潮解、不解理、硬度适中(Mohs～4.7)、易于进行机械加工、光损伤阈值较大等优异的物理化学性能。
β-BaTeMo2O9晶体声光器件与实施例1类似。不同的是：本实施例中晶体取向选择了晶体折射率主轴Z轴做为声光器件的通光方向，Y轴加压电换能器。同样按照图2中激光光路，可以实现激光调Q输出，如图4所示。
实施例3：Cs2TeMo3O12晶体
Cs2TeMo3O12晶体属于单轴晶，六方晶系，6点群。晶体透光范围为0.43-5.38μm，透过率在80％左右，镀膜后的透过率高达99％以上，晶体显示出较大的折射率(ne＝2.03@0.4μm、no＝2.23@0.48μm)。Cs2TeMo3O12晶体具有容易生长大尺寸、高质量单晶，晶体不潮解、不解理、硬度适中(Mohs～4.7)、易于进行机械加工、光损伤阈值较大等优异的物理化学性能。
Cs2TeMo3O12晶体声光器件与实施例1类似。在此实施例中，晶体通光方向选择晶体折射率Z轴，折射率X轴加换能器。同样按照图2中激光光路，可以实现激光调Q输出，如图5所示。
实施例4：Cs2TeW3O12晶体
Cs2TeW3O12晶体属于单轴晶，六方晶系，6点群。晶体透光范围为0.41-5.31μm，透过率在80％左右，镀膜后，其透过率超过99％，晶体显示出较大的折射率(ne＝1.98@0.4μm、no＝2.20@0.48μm)。Cs2TeW3O12晶体具有容易生长大尺寸、高质量单晶，晶体不潮解、不解理、硬度适中(Mohs～4.5)、易于进行机械加工、光损伤阈值较大等优异的物理化学性能。
Cs2TeW3O12晶体结构与性能与Cs2TeMo3O12晶体类似。在此实施例中，晶体通光方向与Cs2TeMo3O12晶体完全相同。同样按照图2中激光光路，可以实现激光调Q输出，如图6所示。
实施例5：CdTeMoO6晶体
CdTeMoO6晶体属于单轴晶，四方晶系，-42m点群。晶体透光范围为0.345-5.40μm，透过率在80％左右，镀膜后，其透过率超过99％，并且晶体显示出较大的折射率。CdTeMoO6晶体具有容易生长大尺寸、高质量单晶，晶体不潮解、硬度适中、便于加工、热稳定性和化学稳定性优良、光损伤阈值较大等优异的物理化学性能。
CdTeMoO6晶体声光器件与实施例1类似。晶体通光方向选择晶体折射率Z轴，折射率X加换能器。同样按照图2中激光光路，可以实现激光调Q输出，如图7所示。
实施例6：Na2TeW2O9晶体
Na2TeW2O9晶体属于双轴晶，单斜晶系，m点群。晶体透光范围为0.45-5.0μm，透过率在80％左右，镀膜后，其透过率超过99％。晶体显示出较大的折射率(nz＝2.12@0.6μm)。Na2TeW2O9晶体具有容易生长大尺寸高质量单晶，晶体不潮解，不解理，硬度适中，易于进行机械加工以及光损伤阈值较大等优异的物理化学性能。
Na2TeW2O9晶体声光器件与实施例1类似。晶体通光方向选择晶体折射率Z轴，折射率X轴加换能器。同样按照图2中激光光路，可以实现激光调Q输出，如图8所示。
将实施例1-6中的晶体以及常规的熔融石英、TeO2测试晶体性能，如表1所示。
表1
Figure PCTCN2017104968-appb-000001
从表1中可知，本发明的晶体基本物理特性与TeO2晶体接近，其中α-BaTeMo2O9晶体声光器件的性能参数中衍射角和衍射效率均略高于TeO2声光器件。

Claims (5)

  1. 四元钼/钨碲酸盐晶体作为声光材料的应用，其特征在于，所述的四元钼/钨碲酸盐为同时含有碲(Te)以及钨(W)或钼(Mo)的四元氧化物。
  2. 根据权利要求1所述的应用，其特征在于，所述的四元钼/钨碲酸盐为：β-BaTeMo2O9、α-BaTeMo2O9、Cs2TeMo3O12、Cs2TeW3O12、Na2TeW2O9或CdTeMoO6。
  3. 根据权利要求1所述的应用，其特征在于，所述的四元钼/钨碲酸盐晶体作为声光介质，制作声光器件。
  4. 根据权利要求3所述的应用，其特征在于，所述的声光器件为声光调制器、声光偏转器或声光滤波器。
  5. 一种声光器件，包括声光介质、压电换能器和阻抗匹配网络，其特征在于，所述的声光介质为权利要求1所述的四元钼/钨碲酸盐晶体。
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