WO2018101154A1 - Laser irradiation device and method for manufacturing thin film transistor - Google Patents

Laser irradiation device and method for manufacturing thin film transistor Download PDF

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Publication number
WO2018101154A1
WO2018101154A1 PCT/JP2017/042107 JP2017042107W WO2018101154A1 WO 2018101154 A1 WO2018101154 A1 WO 2018101154A1 JP 2017042107 W JP2017042107 W JP 2017042107W WO 2018101154 A1 WO2018101154 A1 WO 2018101154A1
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WIPO (PCT)
Prior art keywords
thin film
mask pattern
laser
projection
laser light
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PCT/JP2017/042107
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French (fr)
Japanese (ja)
Inventor
水村　通伸
敏成 新井
畑中　誠
琢郎 竹下
Original Assignee
株式会社ブイ・テクノロジー
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Priority claimed from JP2016253448A external-priority patent/JP2018093154A/en
Application filed by 株式会社ブイ・テクノロジー filed Critical 株式会社ブイ・テクノロジー
Priority to US16/465,050 priority Critical patent/US20190287790A1/en
Priority to CN201780069323.8A priority patent/CN109952630A/en
Priority to KR1020197014100A priority patent/KR20190087427A/en
Publication of WO2018101154A1 publication Critical patent/WO2018101154A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Definitions

  • the present invention relates to the formation of a thin film transistor, and more particularly to a laser irradiation apparatus and a method of manufacturing a thin film transistor for forming a polysilicon thin film by irradiating an amorphous silicon thin film on the thin film transistor with a laser beam.
  • Patent Document 1 an amorphous silicon thin film is formed in a channel region, and then the amorphous silicon thin film is irradiated with a laser beam such as an excimer laser, and laser annealing is performed. It is disclosed to perform a treatment for crystallizing a thin film. According to Patent Document 1, it is possible to make the channel region between the source and drain of a thin film transistor a polysilicon thin film with high electron mobility by performing this process, and to increase the speed of transistor operation. Are listed.
  • the channel region between the source and the drain is formed by one (one) polysilicon thin film. Therefore, the characteristics of the thin film transistor depend on one (one) polysilicon thin film.
  • the energy density of laser light such as excimer laser varies for each irradiation (shot)
  • the electron mobility of the polysilicon thin film formed using the laser light also varies. Therefore, the characteristics of the thin film transistor formed using the polysilicon thin film also depend on the variation in the energy density of the laser light.
  • the characteristics of the plurality of thin film transistors included in the glass substrate may vary.
  • An object of the present invention has been made in view of such problems, and is to provide a laser irradiation apparatus and a thin film transistor manufacturing method capable of suppressing variations in characteristics of a plurality of thin film transistors included in a glass substrate.
  • a laser irradiation apparatus includes a light source that generates laser light and a projection that irradiates a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate with the laser light.
  • a projection mask pattern including a plurality of masks provided on the projection lens and having a transmittance that is a ratio of transmitting the laser light, and the projection lens moves in a predetermined direction.
  • the plurality of thin film transistors on the glass substrate are irradiated with the laser light through each of the plurality of masks included in the projection mask pattern, and each of the plurality of masks included in the projection mask pattern is Any one of the plurality of transmittances is set.
  • the laser irradiation apparatus may be characterized in that, in the projection mask pattern, the masks having different transmittances are randomly arranged.
  • each of the plurality of masks included in the projection mask pattern is set to one of the transmittances included in a predetermined range. It may be a feature.
  • the laser irradiation apparatus is a plurality of microlenses included in a microlens array capable of separating the laser light, and each of the plurality of masks included in the projection mask pattern includes the plurality of masks. It may be characterized by corresponding to each of the microlenses.
  • the laser irradiation apparatus in one embodiment of the present invention may be characterized in that each of the masks included in the projection mask pattern and adjacent to each other in a row orthogonal to the predetermined direction has a different transmittance. .
  • the laser irradiation apparatus may be characterized in that each of the plurality of masks included in the projection mask pattern has a different transmittance.
  • the projection mask pattern has a transmittance of the mask corresponding to each of the microlenses based on characteristics of each of the plurality of microlenses included in the microlens array. May be set as a feature.
  • the projection mask pattern is a phase shift mask that increases the resolution of the microlens by changing the phase of the laser light transmitted through the microlens.
  • the mask may be characterized in that, among the plurality of microlenses, the phase of the laser light transmitted through the microlens determined based on the resolution is changed to increase the resolution of the microlens.
  • the phase shift mask changes the phase of the laser light that passes through the microlenses having a relatively low resolution among the plurality of microlenses.
  • the resolution may be increased.
  • the projection lens irradiates a predetermined region of the amorphous silicon thin film deposited between the source electrode and the drain electrode included in the thin film transistor with a laser beam.
  • a silicon thin film may be formed.
  • a method of manufacturing a thin film transistor includes: a first step of generating a laser beam; and a laser beam in a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate.
  • a third step of moving the glass substrate in a predetermined direction In the second step, the projection mask pattern including a plurality of the masks in which any one of the plurality of transmittances is set. Then, the laser beam is irradiated.
  • the laser light is irradiated through the projection mask pattern in which the masks having different transmittances are randomly arranged. May be a feature.
  • the method of manufacturing a thin film transistor according to an embodiment of the present invention is performed through the projection mask pattern including the mask in which any one of the transmittances included in a predetermined range is set in the second step. Then, the laser light may be irradiated.
  • a laser irradiation apparatus and a thin film transistor manufacturing method capable of suppressing variations in characteristics of a plurality of thin film transistors included in a glass substrate.
  • FIG. 1 is a diagram illustrating a configuration example of a laser irradiation device 10.
  • FIG. 3 is a diagram illustrating a configuration example of a microlens array 13.
  • FIG. It is a schematic diagram which shows the example of the thin-film transistor 20 by which the predetermined area
  • It is a schematic diagram which shows the example of the glass substrate 30 which the laser irradiation apparatus 10 irradiates with the laser beam 14.
  • FIG. It is a schematic diagram which shows the other example of the glass substrate 30 to which the laser irradiation apparatus 10 irradiates the laser beam 14.
  • FIG. FIG. 4 is a schematic diagram showing a configuration example of a projection mask pattern 15 provided on a microlens array 13.
  • FIG. 1 is a diagram illustrating a configuration example of a laser irradiation apparatus 10 according to the first embodiment of the present invention.
  • the laser irradiation apparatus 10 performs annealing by irradiating only a channel region formation scheduled region with laser light, for example.
  • This is an apparatus for polycrystallizing a channel region formation planned region.
  • the laser irradiation device 10 is used, for example, when forming a thin film transistor of a pixel such as a peripheral circuit of a liquid crystal display device.
  • a gate electrode made of a metal film such as Al is formed on the glass substrate 30 by sputtering.
  • a gate insulating film made of a SiN film is formed on the entire surface of the glass substrate 30 by a low temperature plasma CVD method.
  • an amorphous silicon thin film 21 is formed on the gate insulating film by, for example, plasma CVD.
  • the laser irradiation apparatus 10 illustrated in FIG. 1 irradiates a predetermined region on the gate electrode of the amorphous silicon thin film 21 with the laser beam 14 and anneals to crystallize the predetermined region into polysilicon.
  • the beam system of the laser light emitted from the laser light source 11 is expanded by the coupling optical system 12, and the luminance distribution is made uniform.
  • the laser light source 11 is, for example, an excimer laser that emits laser light having a wavelength of 308 nm or 248 nm at a predetermined repetition period.
  • the laser beam is separated into a plurality of laser beams 14 by a plurality of openings (transmission regions) of a projection mask pattern 15 (not shown) provided on the microlens array 13, and a predetermined region of the amorphous silicon thin film 21 is obtained. Is irradiated.
  • the microlens array 13 is provided with a projection mask pattern 15, and the projection mask pattern 15 irradiates a predetermined region with laser light 14.
  • a predetermined region of the amorphous silicon thin film 21 is instantaneously heated and melted, and a part of the amorphous silicon thin film 21 becomes the polysilicon thin film 22.
  • the polysilicon thin film 22 has a higher electron mobility than the amorphous silicon thin film 21 and is used in the thin film transistor 20 in a channel region that electrically connects the source 23 and the drain 24.
  • FIG. 1 an example using the microlens array 13 is shown, but the microlens array 13 is not necessarily used, and the laser light 14 may be irradiated using one projection lens. .
  • the polysilicon thin film 22 is formed using the microlens array 13 will be described as an example.
  • FIG. 2 is a diagram showing a configuration example of the microlens array 13 used for annealing.
  • 20 microlenses 17 are arranged in one column (or one row) in the scanning direction.
  • the laser irradiation apparatus 1 irradiates one thin film transistor 20 with the laser beam 14 by using at least a part of the 20 microlenses 17 included in one column (or one row) of the microlens array 13.
  • the number of microlenses 17 in one row (or one row) included in the microlens array 13 is not limited to 20 and may be any number.
  • the microlens array 13 includes 20 microlenses 17 in one column (or one row), but includes, for example, 83 microlenses in one row (or one column). It is needless to say that 83 is an example, and any number is possible.
  • FIG. 3 is a schematic diagram showing an example of the thin film transistor 20 in which a predetermined region is annealed.
  • the thin film transistor 20 is formed by first forming a polysilicon thin film 22 and then forming a source 23 and a drain 24 at both ends of the formed polysilicon thin film 22.
  • a polysilicon thin film 22 is formed between a source 23 and a drain 24.
  • the laser irradiation apparatus 10 irradiates the thin film transistor 20 with the laser light 14 using, for example, 20 microlenses 17 included in one row (or one row) of the microlens array 13 illustrated in FIG. That is, the laser irradiation apparatus 10 irradiates the polysilicon thin film 22 with 20 shots of laser light 14.
  • a predetermined region of the amorphous silicon thin film 21 is instantaneously heated and melted to become a polysilicon thin film 22.
  • the polysilicon thin film 22 may vary in its electron mobility. This is because the electron mobility of the polysilicon thin film 22 depends on the energy density of the laser beam 14 last irradiated on the polysilicon thin film 22, that is, the energy density of the last shot, as described above.
  • the laser irradiation apparatus 10 irradiates the amorphous silicon thin film 21 with the laser beam 14.
  • the laser irradiation apparatus 10 irradiates the laser beam 14 at a predetermined cycle, moves the glass substrate 30 during a time when the laser beam 14 is not irradiated, and the laser beam 14 is applied to the next amorphous silicon thin film 21. Let it be irradiated.
  • the amorphous silicon thin film 21 is arranged on the glass substrate 30 at a predetermined interval “H” with respect to the moving direction.
  • the laser irradiation apparatus 10 irradiates the part of the amorphous silicon thin film 21 arrange
  • the laser irradiation apparatus 10 irradiates the same laser beam 14 to the plurality of amorphous silicon thin films 21 on the glass substrate using the microlens array 13.
  • the laser irradiation apparatus 10 irradiates, for example, the same laser light 14 to a plurality of amorphous silicon thin films 21 included in the region A shown in FIG.
  • the laser irradiation apparatus 10 irradiates the same laser beam 14 also to the plurality of amorphous silicon thin films 21 included in the region B shown in FIG.
  • the laser irradiation apparatus 10 irradiates the laser beam 14 using each of the 20 microlenses 17 included in one row (or one row) of the microlens array 13 shown in FIG. 2 in order to perform annealing. It is possible to do.
  • the plurality of amorphous silicon thin films 21 in the region A in FIG. 4 are first irradiated with the laser beam 14 using the first microlens 17a included in the microlens array 13 shown in FIG. Thereafter, the glass substrate 30 is moved by a predetermined interval “H”. While the glass substrate 30 is moving, the laser irradiation apparatus 10 stops the irradiation of the laser light 14. Then, after the glass substrate 30 has moved by “H”, the plurality of amorphous silicon thin films 21 in the region A are subjected to laser light 14 using the second microlens 17b included in the microlens array 13 shown in FIG. Irradiated. The laser irradiation apparatus 10 may irradiate the glass substrate 30 once stopped after the glass substrate 30 has moved by “H”, or may continue to move the glass substrate 30. May be irradiated with laser light 14.
  • the irradiation head that is, the laser light source 11, the coupling optical system 12, the microlens array 13, and the projection mask 150
  • the irradiation head 10 may move with respect to the glass substrate 30.
  • the laser irradiation apparatus 10 repeatedly executes this, and finally, the microlenses 17t (that is, the last microlens 17) of the microlens array 13 shown in FIG. ) Is used to irradiate the laser beam 14.
  • the plurality of amorphous silicon thin films 21 in the region A are irradiated with the laser beam 14 using each of the 20 microlenses 17 included in one row (or one row) of the microlens array 13 shown in FIG. Will be.
  • the laser irradiation apparatus 10 applies 20 microlenses included in one row (or one row) of the microlens array 13 shown in FIG. 2 to the plurality of amorphous silicon thin films 21 in the region B of FIG.
  • Each of 17 is irradiated with laser light 14.
  • the timing of irradiation with the laser light 14 is delayed by one irradiation.
  • the plurality of amorphous silicon thin films 21 in the region A are irradiated with the laser light 14 using the second microlens 17b
  • the plurality of amorphous silicon thin films 21 in the region B use the first microlens 17a.
  • Laser light 14 is irradiated.
  • the amorphous silicon thin films 21 in the region A are irradiated with the laser light 14 using the twentieth micro lens 17t (that is, the last micro lens 17)
  • the amorphous silicon thin films 21 in the region B are Laser light is irradiated using the previous nineteenth microlens 17s.
  • the plurality of amorphous silicon thin films 21 in the region B are irradiated with laser light using the twentieth microlens 17t (that is, the last microlens 17) at the timing of the next laser light irradiation. Become.
  • the last irradiated laser beam 14 differs between the plurality of amorphous silicon thin films 21 included in the region A shown in FIG. 4 and the plurality of amorphous silicon thin films 21 included in the region B.
  • the stability between pulses is about 0.5%. That is, the laser irradiation apparatus 10 causes a variation of about 0.5% in the energy density of the laser light 14 for each shot. For this reason, the electron mobility of the polysilicon thin film 22 formed by the laser irradiation apparatus 10 may also vary.
  • the electron mobility of the polysilicon thin film 22 formed by irradiating the laser beam 14 is equal to the energy density of the laser beam 14 last irradiated to the polysilicon thin film 22, that is, the energy density of the last shot. Dependent.
  • the electron movement of the formed polysilicon thin film 22 is different.
  • the degrees will be different from each other.
  • the electron mobility of the formed polysilicon thin film 22 is the same in the region A. It becomes. This is the same for the plurality of amorphous silicon thin films 21 included in the region B. In the region B, the electron mobility of the formed polysilicon thin film 22 is the same. That is, on the glass substrate, the electron mobility differs between regions adjacent to each other, but the plurality of amorphous silicon thin films 21 in the same region have the same electron mobility.
  • the transmittance of the laser light 14 applied to each of the amorphous silicon thin films 21 included in the substrate 30 is changed using, for example, the projection mask pattern 15.
  • the transmittance of the laser light 14 applied to the amorphous silicon thin film 21 is varied. Note that the transmittance is a ratio at which the laser light passes through the mask 150.
  • the amorphous silicon thin film 21 is irradiated with the laser light 14 having different transmittances, and the same is applied to all the amorphous silicon thin films 21.
  • the situation where the laser beam 14 is irradiated is eliminated.
  • adjacent amorphous silicon thin films 21 are irradiated with laser beams 14 having different transmittances.
  • the transmittance of the laser light 14 finally irradiated to the adjacent amorphous silicon thin film 21 is different.
  • the adjacent amorphous silicon thin films 21 are not necessarily irradiated with laser beams 14 having different transmittances.
  • masks having the same transmittance may be adjacent to each other.
  • the adjacent amorphous silicon thin film 21 is irradiated with the laser beam 14 having the same transmittance.
  • the masks 150 having different transmittances are randomly arranged in the projection mask pattern 15, so that the adjacent amorphous silicon thin films 21 have different transmittance laser beams 14. The possibility of irradiation is increased.
  • the electron mobility of the adjacent polysilicon thin film 22 is different from each other.
  • the characteristics of the adjacent thin film transistors 20 are also different in the same region (for example, in the region A).
  • the characteristics of the thin film transistors 20 adjacent to each other in the entire glass substrate 30 are different from each other, and a display difference (for example, a difference in color shading) due to the difference in the characteristics does not appear “linearly”. . Therefore, the display unevenness on the liquid crystal screen does not become “streak”, and the display unevenness can be prevented from being emphasized.
  • FIG. 5 is a diagram for explaining the presence or absence of display unevenness due to the adjacent thin film transistor 20 in the glass substrate 30.
  • the characteristics of the plurality of thin film transistors 20 in the region A are the same as the characteristic A
  • the characteristics of the plurality of thin film transistors 20 in the region B are the same as the characteristic B.
  • the thin film transistor 20 with the characteristic A and the thin film transistor 20 with the characteristic B collide at the “linear” boundary between the region A and the region B, and the difference in display due to the difference in the characteristic is “linear”. Will appear. For this reason, the display unevenness on the liquid crystal screen is emphasized as “streaks”.
  • adjacent thin film transistors 20 in the same region have different characteristics when irradiated with laser beams 14 having different transmittances. Differences in display due to differences are dispersed and do not appear “linear”. Therefore, display unevenness in the liquid crystal screen can be reduced.
  • the projection mask pattern 15 provided on the microlens array 13 has a plurality of masks set with a transmittance that is a ratio of transmitting laser light. 150.
  • Each of the plurality of masks 150 included in the projection mask pattern 15 is set to one of a plurality of transmittances.
  • the plurality of transmittances are, for example, any one of 10 transmittances of 90%, 91%, 92%... 100%.
  • the plurality of transmittances are merely examples, and any transmittance may be used.
  • the plurality of transmittances are not limited to ten, and there may be any number of transmittances.
  • the plurality of transmittances may be in any range such as a range of 70% to 100%.
  • the plurality of transmittance ranges may be a predetermined range. For example, the predetermined range may be set in advance between 90% and 100%.
  • masks 150 having different transmittances are randomly arranged.
  • FIG. 6 is a diagram showing a configuration example of the mask 150 of the projection mask pattern 15 in the first embodiment of the present invention.
  • each of the projection mask patterns 15 having different transmittances is not necessarily arranged at random, and may be arranged based on a predetermined condition.
  • the numerical value described on the projection mask pattern is the transmittance of the laser beam 14 in the projection mask pattern.
  • each of the projection mask patterns is set to a transmittance of 90% to 100%, for example.
  • the transmittance of the projection mask pattern does not need to be in the range of 90 to 100%, and may be any transmittance.
  • the projection mask patterns 15 adjacent to each other may be arranged so as to have different transmittances. Note that the projection mask patterns 15 adjacent to each other are not necessarily arranged so as to have different transmittances.
  • the masks 150 adjacent to each other are different from each other in one row orthogonal to the movement direction (predetermined direction) of the microlens array 13.
  • 150 may be arranged.
  • the laser irradiation apparatus 10 uses at least adjacent microlenses among the 20 microlenses 17 included in one row (or one row) of the microlens array 13 shown in FIG.
  • the transmittance of the laser light 14 irradiated from 17 is different.
  • the laser irradiation apparatus 10 has different amorphous silicon thin films by disposing projection mask patterns having different transmittances on each of the 20 microlenses 17 included in one row (or one row) of the microlens array 13. 21 can be irradiated with laser beams 14 having different transmittances.
  • the width of the transmission region 16 in each projection mask pattern 15 is, for example, 4 ⁇ m.
  • the opening provided in the projection mask pattern 15 shown in FIG. 6 has, for example, a rectangular shape, a long side of 20 ⁇ m, and a short side of 10 ⁇ m.
  • the size of the opening of the projection mask pattern 15 is merely an example, and may be any size as long as it corresponds to the size of the microlens 17.
  • the transmission region 16 of the projection mask pattern 15 is provided so as to be orthogonal to the moving direction (scanning direction) of the glass substrate 30.
  • the transmission region 16 of the projection mask pattern 15 is not necessarily orthogonal to the movement direction (scan direction) of the glass substrate 30, and is provided in parallel (substantially parallel) to the movement direction (scan direction). It may be.
  • the laser irradiation apparatus 10 uses the projection mask pattern 15 shown in FIG. 6 to irradiate the glass substrate 30 illustrated in FIG. 2 with the laser light 14, and as a result, in the same region (for example, in the region A) shown in FIG.
  • adjacent amorphous silicon thin films 21 are irradiated with laser beams 14 having different transmittances. Therefore, for a plurality of amorphous silicon thin films 21 included in the same region (for example, in region A), for example, the laser beam 14 finally irradiated to the adjacent amorphous silicon thin film 21 also has different transmittances. .
  • the electron mobility of the adjacent polysilicon thin films 22 is different from each other.
  • the thin film transistors 20 in the adjacent regions have different characteristics. Become.
  • adjacent thin film transistors 20 have different characteristics in the entire glass substrate 30. For this reason, display differences due to differences in the characteristics of the thin film transistor 20 (for example, differences in color shading) are dispersed and do not appear linearly. Therefore, the display unevenness on the liquid crystal screen does not become “streak”, and the display unevenness can be prevented from being emphasized.
  • the glass substrate 30 moves a predetermined distance each time the laser light 14 is irradiated by one microlens 17. As illustrated in FIG. 2, the predetermined distance is a distance “H” between the plurality of thin film transistors 20 on the glass substrate 30.
  • the laser irradiation apparatus 10 stops the irradiation of the laser beam 14 while moving the glass substrate 30 by the predetermined distance.
  • the laser irradiation apparatus 10 irradiates the laser beam 14 using the microlens 17 included in the microlens array 13.
  • the laser light 14 is irradiated to one amorphous silicon thin film 21 by five microlenses 17.
  • the source 23 and the drain 24 are formed on the thin film transistor 20 in another process.
  • the transmittances of the plurality of masks 150 included in the projection mask pattern 15 are arranged so that the masks 150 having different transmittances are randomly arranged in the projection mask pattern 15.
  • adjacent amorphous silicon thin films 21 are irradiated with laser beams 14 having different transmittances. Therefore, the electron mobility of the adjacent polysilicon thin film 22 is different from each other. That is, the characteristics of the thin film transistors 20 adjacent to each other in the entire glass substrate 30 are different from each other, and a display difference (for example, a difference in color shading) due to the difference in the characteristics does not appear “linearly”. . Therefore, the display unevenness on the liquid crystal screen does not become “streak”, and the display unevenness can be prevented from being emphasized.
  • the second embodiment of the present invention is an embodiment in which the transmittance of each projection mask pattern 15 is changed (adjusted) based on the characteristics of each of the plurality of microlenses 17 included in the microlens array 13.
  • the characteristics of the plurality of microlenses 17 included in the microlens array 13 are different from each other.
  • the characteristics of the microlens 17 disposed near the center of the microlens array 13 and the microlens 17 disposed near the periphery may be biased. Therefore, the laser light 14 emitted from each of the plurality of macro lenses 17 has different characteristics (for example, energy density) due to the different characteristics of the micro lens 17. Therefore, even if the laser irradiation apparatus 10 uses the plurality of microlenses 17 included in the microlens array 13 and simultaneously irradiates the laser light 14, the characteristics of the plurality of microlenses 17 are different from each other. Each characteristic (energy density, etc.) of the laser beam 14 will be different.
  • the transmittance of each of the projection mask patterns 15 is set (adjusted) based on the characteristics of each of the plurality of microlenses 17 included in the microlens array 13. As a result, it is possible to reduce the difference in characteristics of the laser light 14 irradiated using each of the plurality of microlenses 17.
  • each of the plurality of microlenses 17 included in the microlens array 13 shown in FIG. 2 differ within a range of 5%, for example. Note that 5% is merely an example, and the characteristics of the plurality of microlens arrays 13 may be different in a range above or below this.
  • the difference in the characteristics of the microlenses 17 can be grasped in advance by, for example, irradiating each of the microlenses 17 with the laser light 14 and measuring the characteristics (for example, energy density).
  • the transmittance of each projection mask pattern 15 is set (adjusted) based on the characteristics of each microlens 17 grasped in advance.
  • the transmittance of the projection mask pattern 15 disposed on the one microlens 17 is set low.
  • the transmittance of the projection mask pattern 15 disposed on the other microlens 17 is set high. In this way, by setting (adjusting) the transmittance of the projection mask pattern 15 disposed on the microlens 17 according to the characteristics of the microlens 17, the laser light 14 caused by the difference in the characteristics of the microlens 17 can be obtained. Differences in characteristics can be reduced.
  • FIG. 7 shows a projection mask pattern 15 including a mask 150 in which the transmittance is set (adjusted) based on the characteristics of the microlens 17.
  • the example of FIG. 7 shows the projection mask pattern 15 when the characteristics of the microlens 17 arranged near the center of the microlens array 13 and the microlens 17 arranged near the periphery are biased. It is an example.
  • the transmittance of the mask 150 included in the projection mask pattern 15 is set (adjusted) based on the characteristics of the microlens.
  • the laser irradiation apparatus 10 irradiates the laser light 14 using the projection mask pattern illustrated in FIG. 7, thereby improving the characteristics of the laser light 14 caused by the characteristics of the microlenses 17 included in the microlens array 13. The difference is reduced, and the laser beam 14 having substantially the same characteristics can be irradiated.
  • the transmittance of each of the plurality of masks 150 included in the projection mask pattern 15 is based on the characteristics of each of the plurality of microlenses 17 included in the microlens array 13. By changing (adjusting) the difference in characteristics of the laser light 14 due to the difference in characteristics of the microlens 17 can be reduced.
  • the transmittance of the plurality of masks 150 included in the projection mask pattern 15 is changed (adjusted) based on the characteristics of each of the plurality of microlenses 17 included in the microlens array 13. This is an embodiment in which the transmittance of the mask 150 is further changed in order to vary the transmittance of the laser light 14 later.
  • the transmittance of the plurality of masks 150 included in the projection mask pattern 15 is changed (adjusted) based on the characteristics of each of the plurality of microlenses 17 included in the microlens array 13.
  • the difference in the characteristics of the laser light 14 due to the characteristics of each of the plurality of microlenses 17 included in the microlens array 13 is reduced.
  • the transmittance of the plurality of masks 150 included in the projection mask pattern 15 is changed so that the masks 150 having different transmittances are randomly arranged in the projection mask pattern 15. .
  • adjacent amorphous silicon thin films 21 are irradiated with laser beams 14 having different transmittances. Therefore, the electron mobility of the adjacent polysilicon thin film 22 is different from each other.
  • the characteristics of the thin film transistors 20 adjacent to each other in the entire glass substrate 30 are different from each other, and a display difference (for example, a difference in color shading) due to the difference in the characteristics may appear “linearly”. Disappear. Therefore, the display unevenness on the liquid crystal screen does not become “streak”, and the display unevenness can be prevented from being emphasized.
  • the transmittance of the mask 150 included in the projection mask pattern 15 is set (adjusted) based on the characteristics of the microlens 17.
  • the transmittance of each projection mask pattern 15 is set (adjusted) based on the characteristics of each microlens 17 grasped in advance. For example, when the energy density of the laser light 14 transmitted through one microlens 17 is high, the transmittance of the projection mask pattern 15 arranged on the one microlens 17 is set low. On the other hand, when the energy density of the laser light 14 transmitted through the other microlens 17 is low, the transmittance of the projection mask pattern 15 disposed on the other microlens 17 is set high.
  • the transmittance of the mask 150 is dispersed so that the transmittance is dispersed throughout the projection mask pattern 15 with the set transmittance as a reference. Change further.
  • the mask 150 whose transmittance is set to 90% based on the characteristics of the microlens 17 changes the transmittance assigned to the mask 150 so that the transmittance varies throughout the projection mask pattern 15.
  • the 90% transmittance is further changed in proportion. For example, if the transmittance change ratio assigned to vary the transmittance across the projection mask pattern 15 is 95%, the mask 150 will change the transmittance from 90% to a further 95%. , 85.5% transmittance.
  • the transmittance is changed with the transmittance set based on the characteristics of the microlens 17 as a reference, in order to further vary the transmittance in the entire projection mask pattern 15. .
  • laser light having different transmittances with respect to the adjacent amorphous silicon thin film 21 while reducing the difference in the characteristics of the laser light 14 due to the characteristics of each of the plurality of microlenses 17 included in the microlens array 13. 14 can be irradiated.
  • the electron mobility of the adjacent polysilicon thin films 22 different from each other while reducing the difference in the characteristics of the laser light 14 generated based on the characteristics of the microlens 17.
  • the characteristics of the adjacent thin film transistors 20 are different from each other, and a display difference (for example, a difference in color density) due to the difference in the characteristics does not appear “linearly”. Therefore, the display unevenness on the liquid crystal screen does not become “streak”, and the display unevenness can be prevented from being emphasized.
  • the fourth embodiment of the present invention is an embodiment in which laser annealing is performed using a single projection lens 18 instead of the microlens array 13.
  • FIG. 8 is a diagram illustrating a configuration example of the laser irradiation apparatus 10 according to the fourth embodiment of the present invention.
  • the laser irradiation apparatus 10 according to the third embodiment of the present invention includes a laser light source 11, a coupling optical system 12, a projection mask pattern 15, and a projection lens 18.
  • the laser light source 11 and the coupling optical system 12 have the same configuration as the laser light source 11 and the coupling optical system 12 in the first embodiment of the present invention shown in FIG. Omitted.
  • the projection mask pattern has the same configuration as the projection mask pattern in the first embodiment of the present invention, detailed description is omitted.
  • Laser light passes through an opening (transmission region) of a projection mask pattern 15 (not shown) illustrated in FIG. 6 and is irradiated onto a predetermined region of the amorphous silicon thin film 21 by the projection lens 18.
  • a predetermined region of the amorphous silicon thin film 21 is instantaneously heated and melted, and a part of the amorphous silicon thin film 21 becomes the polysilicon thin film 22.
  • the laser irradiation apparatus 10 irradiates the laser beam 14 at a predetermined cycle, moves the glass substrate 30 during the time when the laser beam 14 is not irradiated, and the next amorphous silicon thin film 21.
  • the laser beam 14 is irradiated to the point.
  • the amorphous silicon thin film 21 is arranged on the glass substrate 30 at a predetermined interval “H” in the moving direction.
  • the laser irradiation apparatus 10 irradiates the part of the amorphous silicon thin film 21 arrange
  • the laser beam 14 is converted by the magnification of the optical system of the projection lens 18. That is, the pattern of the projection mask pattern 15 is converted by the magnification of the optical system of the projection lens 18, and a predetermined region on the glass substrate 30 is laser annealed.
  • the mask pattern of the projection mask pattern 15 is converted by the magnification of the optical system of the projection lens 18, and a predetermined region on the glass substrate 30 is laser-annealed.
  • a predetermined region on the glass substrate 30 is laser-annealed.
  • the magnification of the optical system of the projection lens 18 is not limited to about twice, and may be any magnification.
  • a predetermined region on the glass substrate 30 is laser-annealed according to the magnification of the optical system of the projection lens 18. For example, if the magnification of the optical system of the projection lens 18 is 4, the mask pattern of the projection mask pattern 15 is multiplied by about 1/4 (0.25), and a predetermined region of the glass substrate 30 is laser annealed. .
  • the reduced image of the projection mask pattern 15 irradiated on the glass substrate 30 is a pattern rotated 180 degrees around the optical axis of the lens of the projection lens 18.
  • the projection lens 18 forms an erect image
  • the reduced image of the projection mask pattern 15 irradiated on the glass substrate 30 is the projection mask pattern 15 as it is.
  • the transmittance of the mask 150 in the central portion of the projection mask pattern 15 is increased while the transmission of the mask 150 in the peripheral portion is increased.
  • the adjacent amorphous silicon thin films 21 have different transmittances. Irradiation with the laser beam 14 is possible. As a result, the characteristics of the thin film transistors 20 adjacent to each other in the entire glass substrate 30 are different from each other, and a display difference (for example, a difference in color shading) due to the difference in the characteristics may appear “linearly”. Disappear. Therefore, the display unevenness on the liquid crystal screen does not become “streak”, and the display unevenness can be prevented from being emphasized.
  • a display difference for example, a difference in color shading
  • a phase shift mask is applied to a location corresponding to a micro lens having a relatively low resolution based on the resolution of each of the plurality of micro lenses 17 included in the micro lens array 13. This is an embodiment in which the resolving power of the micro lens 17 having a relatively low resolving power is increased.
  • Each of the plurality of microlenses 17 included in the microlens array 13 may have different resolving power as one of its characteristics. That is, the microlens array 13 may include a microlens 17 having a relatively low resolution. If the resolving power of the microlens 17 is low, the light transmitted through the adjacent mask may not be correctly resolved and may not be annealed according to the pattern of the projection mask pattern 15. As a result, the microcrystal may disturb the channel region of the thin film transistor 20 and adversely affect the display of the liquid crystal screen.
  • FIG. 9 is a diagram illustrating a configuration example of the microlens 17 included in the microlens array 13.
  • the microlens 17 shown in gray has a relatively low resolving power compared to other microlenses 17 (microlenses 17 shown in white). Therefore, when the laser irradiation apparatus 10 irradiates the laser beam 14 using the microlens array 13 illustrated in FIG. 9, the channel region of the thin film transistor 20 may not be appropriately annealed according to the pattern of the projection mask pattern 15. There is.
  • a phase shift mask is used to increase the resolving power of the microlenses 17 having a relatively low resolving power among the plurality of microlenses 17 included in the microlens array 13.
  • a phase shift mask is applied to the portion of the micro lens 17 having a relatively low resolving power, and the resolving power of the micro lens 17 having a relatively low resolving power is increased.
  • the resolving power of the microlens 17 having a relatively low resolving power is increased, while the phase shift mask is not applied to the resolving power of the other microlenses 17, so that the resolving power of the other microlenses 17 is increased more than necessary. There is no end.
  • the difference in resolving power of each of the plurality of microlenses 17 can be reduced in the entire microlens 13, and the amorphous silicon annealing of the thin film transistor 20 can be appropriately executed (that is, the annealing is executed according to the mask pattern). Can adversely affect the display on the liquid crystal screen.
  • the part of the plurality of microlenses 17 included in the microlens array 13 illustrated in FIG. 2 may have a resolution that is, for example, 10% lower than that of the other microlenses 17. Note that “10%” is merely an example, and the resolving power of each of the plurality of microlens arrays 13 may be different within this range or less.
  • the difference in resolving power of the microlenses 17 can be grasped in advance by, for example, irradiating each of the microlenses 17 with the laser light 14 and measuring the resolving power.
  • a phase shift mask is applied to the microlenses 17 having a resolution lower than a predetermined resolution based on the resolving power of each microlens 17 grasped in advance.
  • the predetermined resolving power is, for example, a resolving power that is 10% or more lower than the average value of the resolving power of the plurality of microlenses 17. Note that 10% is merely an example, and it is needless to say that any value may be used.
  • the predetermined resolving power may be a predetermined resolving power (fixed value).
  • the predetermined resolving power (fixed value) is a resolving power at which the amorphous silicon of the thin film transistor 20 can be appropriately annealed.
  • the micro lens 17 to which the phase shift mask is applied may be determined based on a difference from the micro lens 17 having the highest resolution among the plurality of micro lenses 17. That is, it is determined that the phase shift mask is applied to the microlens 17 whose resolution and difference of the highest microlens 17 are equal to or greater than a predetermined value.
  • microlens 17 to which the phase shift mask is applied may be determined in any way, and if the microlens 17 that may not be annealed properly because the light transmitted through the adjacent mask is not correctly resolved can be extracted. Any method may be used.
  • FIG. 10 is a diagram illustrating a configuration example of the laser irradiation apparatus 10 according to the fifth embodiment.
  • the laser irradiation apparatus 10 in the fifth embodiment includes a phase shift mask 19 on the microlens array 13.
  • a phase shift mask (Phase-Shifting Mask: PSM) 19 is a mask capable of controlling the phase and transmittance of the laser light 14 and can improve the resolution and the depth of focus of the microlens 17.
  • the phase shift mask 19 is, for example, a halftone phase shift mask, which is a mask capable of changing the phase of the laser light 14 transmitted through the microlens 17.
  • the halftone phase shift mask for example, by providing a translucent light-shielding film (phase shifter) on the microlens 17, the propagation speed of the laser light 14 passing through the light-shielding film is delayed, and accordingly, The phase of the laser beam 14 is changed. Then, the laser beam 14 whose phase has changed through the translucent light-shielding film interferes with the laser light 14 that has not passed through the semi-transparent light-shielding film and whose phase has not changed, thereby causing the laser light to interfere.
  • the resolution of 14 can be improved.
  • the phase shift mask 19 in the fifth embodiment uses a laser beam in the amorphous silicon region of the thin film transistor 20 for each of the microlenses 17 included in the microlens array 13 like the projection mask pattern 15 in the above-described embodiment.
  • the pattern for irradiating 14 is provided.
  • the phase shift mask 19 has a configuration in which the resolution can be improved by, for example, a phase shifter with respect to the microlens 17 having a low resolution.
  • the phase shift mask 19 is applied to the microlens 17 having a relatively low resolution among the microlenses 17 included in the microlens array 13.
  • the phase shift mask 19 is applied to the microlenses 17 (for example, the microlenses 17 in the columns 1 and 10 and the columns 6 and 7) shown in FIG.
  • the resolving power of the micro lens 17 having a relatively low resolving power can be improved, and the channel region of the thin film transistor 20 can be appropriately annealed according to the pattern of the phase shift mask 19.
  • the phase shift mask 19 is not applied to the other microlenses 17 (microlenses 17 whose resolving power is not relatively low).
  • the resolving power of the microlens 17 having a relatively low resolving power is improved, while the resolving power of the other microlenses 17 remains unchanged, and the resolving power is not improved more than necessary. Therefore, as a result, the difference in the resolving power of each of the plurality of microlenses 17 in the entire microlens 13 can be reduced.
  • the fifth embodiment of the present invention can reduce the difference in resolution between each of the plurality of microlenses 17 in the entire microlens 13, and can appropriately perform the annealing of amorphous silicon in the thin film transistor 20 ( That is, annealing can be performed according to the mask pattern), and adverse effects on the display of the liquid crystal screen can be suppressed.

Abstract

The laser irradiation device according to one embodiment of the present invention is provided with: a light source that generates a laser beam; a projection lens for irradiating a predetermined region of an amorphous silicon thin film with the laser beam, said amorphous silicon thin film being adhered to each of a plurality of thin film transistors on a glass substrate; and a projection mask pattern, which is provided on the projection lens, and which includes a plurality of masks, in which transmissivities, i.e., the rates at which the laser beam passes through, are set. Through each of the masks included in the projection mask pattern, the projection lens applies the laser beam to the thin film transistors on the glass substrate moving in the predetermined direction, and in each of the masks included in the projection mask pattern, any one of the transmissivities is set.

Description

レーザ照射装置および薄膜トランジスタの製造方法Laser irradiation apparatus and thin film transistor manufacturing method
　本発明は、薄膜トランジスタの形成に関するものであり、特に、薄膜トランジスタ上のアモルファスシリコン薄膜にレーザ光を照射して、ポリシリコン薄膜を形成するためのレーザ照射装置および薄膜トランジスタの製造方法に関する。 The present invention relates to the formation of a thin film transistor, and more particularly to a laser irradiation apparatus and a method of manufacturing a thin film transistor for forming a polysilicon thin film by irradiating an amorphous silicon thin film on the thin film transistor with a laser beam.
　逆スタガ構造の薄膜トランジスタとして、アモルファスシリコン薄膜をチャネル領域に使用したものが存在する。ただ、アモルファスシリコン薄膜は電子移動度が小さいため、当該アモルファスシリコン薄膜をチャネル領域に使用すると、薄膜トランジスタにおける電荷の移動度が小さくなるという難点があった。 There is an inverted staggered thin film transistor that uses an amorphous silicon thin film for the channel region. However, since the amorphous silicon thin film has a low electron mobility, there is a problem that when the amorphous silicon thin film is used for the channel region, the charge mobility in the thin film transistor is reduced.
　そこで、アモルファスシリコン薄膜の所定の領域をレーザ光により瞬間的に加熱することで多結晶化し、電子移動度の高いポリシリコン薄膜を形成して、当該ポリシリコン薄膜をチャネル領域に使用する技術が存在する。 In view of this, there is a technology in which a predetermined region of an amorphous silicon thin film is polycrystallized by instantaneously heating with a laser beam to form a polysilicon thin film having a high electron mobility and using the polysilicon thin film for a channel region. To do.
　例えば、特許文献１には、チャネル領域にアモルファスシリコン薄膜形成し、その後、このアモルファスシリコン薄膜にエキシマレーザ等のレーザ光を照射してレーザアニールすることにより、短時間での溶融凝固によって、ポリシリコン薄膜に結晶化させる処理を行うことが開示されている。特許文献１には、当該処理を行うことにより、薄膜トランジスタのソースとドレイン間のチャネル領域を、電子移動度の高いポリシリコン薄膜とすることが可能となり、トランジスタ動作の高速化が可能になる旨が記載されている。 For example, in Patent Document 1, an amorphous silicon thin film is formed in a channel region, and then the amorphous silicon thin film is irradiated with a laser beam such as an excimer laser, and laser annealing is performed. It is disclosed to perform a treatment for crystallizing a thin film. According to Patent Document 1, it is possible to make the channel region between the source and drain of a thin film transistor a polysilicon thin film with high electron mobility by performing this process, and to increase the speed of transistor operation. Are listed.
特開２０１６－１００５３７号公報Japanese Patent Laid-Open No. 2016-100573
　特許文献１に記載の薄膜トランジスタでは、ソースとドレイン間のチャネル領域が、一か所（一本）のポリシリコン薄膜により形成されている。そのため、薄膜トランジスタの特性は、一か所（一本）のポリシリコン薄膜に依存することになる。 In the thin film transistor described in Patent Document 1, the channel region between the source and the drain is formed by one (one) polysilicon thin film. Therefore, the characteristics of the thin film transistor depend on one (one) polysilicon thin film.
　ここで、エキシマレーザ等のレーザ光のエネルギ密度は、その照射（ショット）ごとにばらつきが生じるため、当該レーザ光を用いて形成されるポリシリコン薄膜の電子移動度にもばらつきが生じる。そのため、当該ポリシリコン薄膜を用いて形成される薄膜トランジスタの特性も、レーザ光のエネルギ密度のばらつきに依存してしまう。 Here, since the energy density of laser light such as excimer laser varies for each irradiation (shot), the electron mobility of the polysilicon thin film formed using the laser light also varies. Therefore, the characteristics of the thin film transistor formed using the polysilicon thin film also depend on the variation in the energy density of the laser light.
　その結果、ガラス基板に含まれる複数の薄膜トランジスタの特性には、ばらつきが生じてしまう可能性がある。 As a result, the characteristics of the plurality of thin film transistors included in the glass substrate may vary.
　本発明の目的は、かかる問題点に鑑みてなされたものであって、ガラス基板に含まれる複数の薄膜トランジスタの特性のばらつきを抑制可能なレーザ照射装置および薄膜トランジスタの製造方法を提供することである。 An object of the present invention has been made in view of such problems, and is to provide a laser irradiation apparatus and a thin film transistor manufacturing method capable of suppressing variations in characteristics of a plurality of thin film transistors included in a glass substrate.
　本発明の一実施形態におけるレーザ照射装置は、レーザ光を発生する光源と、ガラス基板上の複数の薄膜トランジスタの各々に被着されたアモルファスシリコン薄膜の所定の領域に、当該レーザ光を照射する投影レンズと、当該投影レンズ上に設けられ、当該レーザ光が透過する割合である透過率が設定された複数のマスクを含む投影マスクパターンと、を備え、当該投影レンズは、所定の方向に移動する当該ガラス基板上の当該複数の薄膜トランジスタに対して、当該投影マスクパターンに含まれる当該複数のマスクの各々を介して当該レーザ光を照射し、当該投影マスクパターンに含まれる当該複数のマスクの各々は、複数の当該透過率のいずれかが設定される。 A laser irradiation apparatus according to an embodiment of the present invention includes a light source that generates laser light and a projection that irradiates a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate with the laser light. A projection mask pattern including a plurality of masks provided on the projection lens and having a transmittance that is a ratio of transmitting the laser light, and the projection lens moves in a predetermined direction. The plurality of thin film transistors on the glass substrate are irradiated with the laser light through each of the plurality of masks included in the projection mask pattern, and each of the plurality of masks included in the projection mask pattern is Any one of the plurality of transmittances is set.
　本発明の一実施形態におけるレーザ照射装置は、当該投影マスクパターンにおいて、異なる当該透過率が設定された当該マスクがランダムに配置されることを特徴としてもよい。 The laser irradiation apparatus according to an embodiment of the present invention may be characterized in that, in the projection mask pattern, the masks having different transmittances are randomly arranged.
　本発明の一実施形態におけるレーザ照射装置は、当該投影マスクパターンに含まれる当該複数のマスクの各々は、予め定められた所定の範囲内に含まれる当該透過率のいずれかが設定されることを特徴としてもよい。 In the laser irradiation apparatus according to an embodiment of the present invention, each of the plurality of masks included in the projection mask pattern is set to one of the transmittances included in a predetermined range. It may be a feature.
　本発明の一実施形態におけるレーザ照射装置は、当該レーザ光を分離可能なマイクロレンズアレイに含まれる複数のマイクロレンズであり、当該投影マスクパターンに含まれる当該複数のマスクの各々は、当該複数のマイクロレンズの各々に対応することを特徴としてもよい。 The laser irradiation apparatus according to an embodiment of the present invention is a plurality of microlenses included in a microlens array capable of separating the laser light, and each of the plurality of masks included in the projection mask pattern includes the plurality of masks. It may be characterized by corresponding to each of the microlenses.
　本発明の一実施形態におけるレーザ照射装置は、当該投影マスクパターンに含まれ、当該所定の方向に直交する一列において互いに隣接する当該マスクの各々は、互いに当該透過率が異なることを特徴としてもよい。 The laser irradiation apparatus in one embodiment of the present invention may be characterized in that each of the masks included in the projection mask pattern and adjacent to each other in a row orthogonal to the predetermined direction has a different transmittance. .
　本発明の一実施形態におけるレーザ照射装置は、当該投影マスクパターンに含まれる当該複数のマスクの各々は、互いに当該透過率が異なることを特徴としてもよい。 The laser irradiation apparatus according to an embodiment of the present invention may be characterized in that each of the plurality of masks included in the projection mask pattern has a different transmittance.
　本発明の一実施形態におけるレーザ照射装置は、当該投影マスクパターンは、当該マイクロレンズアレイに含まれる複数のマイクロレンズの各々の特性に基づいて、当該マイクロレンズの各々に対応する当該マスクの透過率が設定されることを特徴としてもよい。 In the laser irradiation apparatus according to one embodiment of the present invention, the projection mask pattern has a transmittance of the mask corresponding to each of the microlenses based on characteristics of each of the plurality of microlenses included in the microlens array. May be set as a feature.
　本発明の一実施形態におけるレーザ照射装置は、当該投影マスクパターンは、当該マイクロレンズを透過するレーザ光の位相を変化させることにより、当該マイクロレンズの解像度を高める位相シフトマスクであり、当該位相シフトマスクは、当該複数のマイクロレンズのうち、当該解像度に基づいて決定されたマイクロレンズを透過する当該レーザ光の位相を変化させ、当該マイクロレンズの解像度を高くすることを特徴としてもよい。 In the laser irradiation apparatus according to an embodiment of the present invention, the projection mask pattern is a phase shift mask that increases the resolution of the microlens by changing the phase of the laser light transmitted through the microlens. The mask may be characterized in that, among the plurality of microlenses, the phase of the laser light transmitted through the microlens determined based on the resolution is changed to increase the resolution of the microlens.
　本発明の一実施形態におけるレーザ照射装置は、当該位相シフトマスクは、当該複数のマイクロレンズのうち、相対的に解像度が低いマイクロレンズを透過する当該レーザ光の位相を変化させ、当該マイクロレンズの解像度を高くすることを特徴としてもよい。 In the laser irradiation apparatus according to an embodiment of the present invention, the phase shift mask changes the phase of the laser light that passes through the microlenses having a relatively low resolution among the plurality of microlenses. The resolution may be increased.
　本発明の一実施形態におけるレーザ照射装置は、当該投影レンズは、薄膜トランジスタに含まれるソース電極とドレイン電極との間に被着されたアモルファスシリコン薄膜の所定の領域にレーザ光を照射して、ポリシリコン薄膜を形成することを特徴としてもよい。 In the laser irradiation apparatus according to one embodiment of the present invention, the projection lens irradiates a predetermined region of the amorphous silicon thin film deposited between the source electrode and the drain electrode included in the thin film transistor with a laser beam. A silicon thin film may be formed.
　本発明の一実施形態における薄膜トランジスタの製造方法は、レーザ光を発生する第１のステップと、ガラス基板上の複数の薄膜トランジスタの各々に被着されたアモルファスシリコン薄膜の所定の領域に、当該レーザ光が透過する割合である透過率が設定された複数のマスクを含む投影マスクパターンが設けれた投影レンズを用いて、当該レーザ光を照射する第２のステップと、当該レーザ光が照射されるごとに、当該ガラス基板を所定の方向に移動する第３のステップと、を含み、第２のステップにおいて、複数の当該透過率のいずれかが設定された複数の当該マスクを含む当該投影マスクパターンを介して、当該レーザ光を照射する。 In one embodiment of the present invention, a method of manufacturing a thin film transistor includes: a first step of generating a laser beam; and a laser beam in a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate. A second step of irradiating the laser beam using a projection lens provided with a projection mask pattern including a plurality of masks having a transmittance that is a ratio of transmitting the laser beam; and whenever the laser beam is irradiated And a third step of moving the glass substrate in a predetermined direction. In the second step, the projection mask pattern including a plurality of the masks in which any one of the plurality of transmittances is set. Then, the laser beam is irradiated.
　本発明の一実施形態における薄膜トランジスタの製造方法は、第２のステップにおいて、異なる当該透過率が設定された当該マスクがランダムに配置された当該投影マスクパターンを介して、当該レーザ光を照射することを特徴としてもよい。 In the thin film transistor manufacturing method according to an embodiment of the present invention, in the second step, the laser light is irradiated through the projection mask pattern in which the masks having different transmittances are randomly arranged. May be a feature.
　本発明の一実施形態における薄膜トランジスタの製造方法は、第２のステップにおいて、予め定められた所定の範囲内に含まれる当該透過率のいずれかが設定された当該マスクを含む当該投影マスクパターンを介して、当該レーザ光を照射することを特徴としてもよい。 In the second step, the method of manufacturing a thin film transistor according to an embodiment of the present invention is performed through the projection mask pattern including the mask in which any one of the transmittances included in a predetermined range is set in the second step. Then, the laser light may be irradiated.
　本発明によれば、ガラス基板に含まれる複数の薄膜トランジスタの特性のばらつきを抑制可能な、レーザ照射装置および薄膜トランジスタの製造方法を提供することである。 According to the present invention, there is provided a laser irradiation apparatus and a thin film transistor manufacturing method capable of suppressing variations in characteristics of a plurality of thin film transistors included in a glass substrate.
レーザ照射装置１０の構成例を示す図である。1 is a diagram illustrating a configuration example of a laser irradiation device 10. FIG. マイクロレンズアレイ１３の構成例を示す図である。3 is a diagram illustrating a configuration example of a microlens array 13. FIG. 所定の領域がアニール化された薄膜トランジスタ２０の例を示す模式図である。It is a schematic diagram which shows the example of the thin-film transistor 20 by which the predetermined area | region was annealed. レーザ照射装置１０がレーザ光１４を照射するガラス基板３０の例を示す模式図である。It is a schematic diagram which shows the example of the glass substrate 30 which the laser irradiation apparatus 10 irradiates with the laser beam 14. FIG. レーザ照射装置１０がレーザ光１４を照射するガラス基板３０の他の例を示す模式図である。It is a schematic diagram which shows the other example of the glass substrate 30 to which the laser irradiation apparatus 10 irradiates the laser beam 14. FIG. マイクロレンズアレイ１３に設けられた投影マスクパターン１５の構成例を示す模式図である。FIG. 4 is a schematic diagram showing a configuration example of a projection mask pattern 15 provided on a microlens array 13. マイクロレンズアレイ１３に設けられた投影マスクパターン１５の他の構成例を示す模式図である。It is a schematic diagram which shows the other structural example of the projection mask pattern 15 provided in the micro lens array. レーザ照射装置１０の他の構成例を示す図である。It is a figure which shows the other structural example of the laser irradiation apparatus. マイクロレンズアレイ１３の他の構成例を示す図である。It is a figure which shows the other structural example of the micro lens array. レーザ照射装置１０の他の構成例を示す図である。It is a figure which shows the other structural example of the laser irradiation apparatus.
　以下、本発明の実施形態について、添付の図面を参照して具体的に説明する。 Hereinafter, embodiments of the present invention will be specifically described with reference to the accompanying drawings.
　（第１の実施形態）
　図１は、本発明の第１の実施形態におけるレーザ照射装置１０の構成例を示す図である。 (First embodiment)
FIG. 1 is a diagram illustrating a configuration example of a laser irradiation apparatus 10 according to the first embodiment of the present invention.
　本発明の第１の実施形態において、レーザ照射装置１０は、薄膜トランジスタ（ＴＦＴ）２０のような半導体装置の製造工程において、例えば、チャネル領域形成予定領域のみにレーザ光を照射してアニールし、当該チャネル領域形成予定領域を多結晶化するための装置である。 In the first embodiment of the present invention, in the manufacturing process of a semiconductor device such as a thin film transistor (TFT) 20, the laser irradiation apparatus 10 performs annealing by irradiating only a channel region formation scheduled region with laser light, for example. This is an apparatus for polycrystallizing a channel region formation planned region.
　レーザ照射装置１０は、例えば、液晶表示装置の周辺回路などの画素の薄膜トランジスタを形成する際に用いられる。このような薄膜トランジスタを形成する場合、まず、ガラス基板３０上にＡｌ等の金属膜からなるゲート電極を、スパッタによりパターン形成する。そして、低温プラズマＣＶＤ法により、ガラス基板３０上の全面にＳｉＮ膜からなるゲート絶縁膜を形成する。その後、ゲート絶縁膜上に、例えば、プラズマＣＶＤ法によりアモルファスシリコン薄膜２１を形成する。そして、図１に例示するレーザ照射装置１０により、アモルファスシリコン薄膜２１のゲート電極上の所定の領域にレーザ光１４を照射してアニールし、当該所定の領域を多結晶化してポリシリコン化する。 The laser irradiation device 10 is used, for example, when forming a thin film transistor of a pixel such as a peripheral circuit of a liquid crystal display device. When forming such a thin film transistor, first, a gate electrode made of a metal film such as Al is formed on the glass substrate 30 by sputtering. Then, a gate insulating film made of a SiN film is formed on the entire surface of the glass substrate 30 by a low temperature plasma CVD method. Thereafter, an amorphous silicon thin film 21 is formed on the gate insulating film by, for example, plasma CVD. Then, the laser irradiation apparatus 10 illustrated in FIG. 1 irradiates a predetermined region on the gate electrode of the amorphous silicon thin film 21 with the laser beam 14 and anneals to crystallize the predetermined region into polysilicon.
　図１に示すように、レーザ照射装置１０において、レーザ光源１１から出射されたレーザ光は、カップリング光学系１２によりビーム系が拡張され、輝度分布が均一化される。レーザ光源１１は、例えば、波長が３０８ｎｍや２４８ｎｍなどのレーザ光を、所定の繰り返し周期で放射するエキシマレーザである。 As shown in FIG. 1, in the laser irradiation apparatus 10, the beam system of the laser light emitted from the laser light source 11 is expanded by the coupling optical system 12, and the luminance distribution is made uniform. The laser light source 11 is, for example, an excimer laser that emits laser light having a wavelength of 308 nm or 248 nm at a predetermined repetition period.
　その後、レーザ光は、マイクロレンズアレイ１３上に設けられた投影マスクパターン１５（図示しない）の複数の開口（透過領域）により、複数のレーザ光１４に分離され、アモルファスシリコン薄膜２１の所定の領域に照射される。マイクロレンズアレイ１３には、投影マスクパターン１５が設けられ、当該投影マスクパターン１５によって所定の領域にレーザ光１４が照射される。そして、アモルファスシリコン薄膜２１の所定の領域が瞬間加熱されて溶融し、アモルファスシリコン薄膜２１の一部がポリシリコン薄膜２２となる。 Thereafter, the laser beam is separated into a plurality of laser beams 14 by a plurality of openings (transmission regions) of a projection mask pattern 15 (not shown) provided on the microlens array 13, and a predetermined region of the amorphous silicon thin film 21 is obtained. Is irradiated. The microlens array 13 is provided with a projection mask pattern 15, and the projection mask pattern 15 irradiates a predetermined region with laser light 14. A predetermined region of the amorphous silicon thin film 21 is instantaneously heated and melted, and a part of the amorphous silicon thin film 21 becomes the polysilicon thin film 22.
　ポリシリコン薄膜２２は、アモルファスシリコン薄膜２１に比べて電子移動度が高く、薄膜トランジスタ２０において、ソース２３とドレイン２４とを電気的に接続させるチャネル領域に用いられる。なお、図１の例では、マイクロレンズアレイ１３を用いた例を示しているが、必ずしもマイクロレンズアレイ１３を用いる必要はなく、１個の投影レンズを用いてレーザ光１４を照射してもよい。なお、実施形態１では、マイクロレンズアレイ１３を用いて、ポリシリコン薄膜２２を形成する場合を例にして説明する。 The polysilicon thin film 22 has a higher electron mobility than the amorphous silicon thin film 21 and is used in the thin film transistor 20 in a channel region that electrically connects the source 23 and the drain 24. In the example of FIG. 1, an example using the microlens array 13 is shown, but the microlens array 13 is not necessarily used, and the laser light 14 may be irradiated using one projection lens. . In the first embodiment, a case where the polysilicon thin film 22 is formed using the microlens array 13 will be described as an example.
　図２は、アニール化に用いるマイクロレンズアレイ１３の構成例を示す図である。図２に示すように、マイクロレンズアレイ１３において、スキャン方向の１列（又は１行）には、２０個のマイクロレンズ１７が配置される。レーザ照射装置１は、１つの薄膜トランジスタ２０に対して、マイクロレンズアレイ１３の１列（又は１行）に含まれる２０個のマイクロレンズ１７の少なくとも一部を用いて、レーザ光１４を照射する。なお、なお、マイクロレンズアレイ１３に含まれる一列（又は一行）のマイクロレンズ１７の数は、２０個に限られず、いくつであってもよい。 FIG. 2 is a diagram showing a configuration example of the microlens array 13 used for annealing. As shown in FIG. 2, in the microlens array 13, 20 microlenses 17 are arranged in one column (or one row) in the scanning direction. The laser irradiation apparatus 1 irradiates one thin film transistor 20 with the laser beam 14 by using at least a part of the 20 microlenses 17 included in one column (or one row) of the microlens array 13. Note that the number of microlenses 17 in one row (or one row) included in the microlens array 13 is not limited to 20 and may be any number.
　図２に示すように、マイクロレンズアレイ１３は、その一列（または一行）にマイクロレンズ１７を２０個含むが、一行（または一列）には例えば８３個含む。なお、８３個は例示であって、いくつであってもよいことは言うまでもない。 As shown in FIG. 2, the microlens array 13 includes 20 microlenses 17 in one column (or one row), but includes, for example, 83 microlenses in one row (or one column). It is needless to say that 83 is an example, and any number is possible.
　図３は、所定の領域がアニール化された薄膜トランジスタ２０の例を示す模式図である。なお、薄膜トランジスタ２０は、最初にポリシリコン薄膜２２を形成し、その後、形成されたポリシリコン薄膜２２の両端にソース２３とドレイン２４を形成することで、作成される。 FIG. 3 is a schematic diagram showing an example of the thin film transistor 20 in which a predetermined region is annealed. The thin film transistor 20 is formed by first forming a polysilicon thin film 22 and then forming a source 23 and a drain 24 at both ends of the formed polysilicon thin film 22.
　図３に示すように、薄膜トランジスタは、ソース２３とドレイン２４との間に、ポリシリコン薄膜２２が形成されている。レーザ照射装置１０は、薄膜トランジスタ２０に対して、図２に示したマイクロレンズアレイ１３の一列（または一行）に含まれる例えば２０個のマイクロレンズ１７を用いて、レーザ光１４を照射する。すなわち、レーザ照射装置１０は、ポリシリコン薄膜２２に対して、２０ショットのレーザ光１４を照射する。その結果、薄膜トランジスタ２０において、アモルファスシリコン薄膜２１の所定の領域が瞬間加熱されて溶融し、ポリシリコン薄膜２２となる。 As shown in FIG. 3, in the thin film transistor, a polysilicon thin film 22 is formed between a source 23 and a drain 24. The laser irradiation apparatus 10 irradiates the thin film transistor 20 with the laser light 14 using, for example, 20 microlenses 17 included in one row (or one row) of the microlens array 13 illustrated in FIG. That is, the laser irradiation apparatus 10 irradiates the polysilicon thin film 22 with 20 shots of laser light 14. As a result, in the thin film transistor 20, a predetermined region of the amorphous silicon thin film 21 is instantaneously heated and melted to become a polysilicon thin film 22.
　ポリシリコン薄膜２２は、レーザ光１４のエネルギ密度は１ショットごとにばらつきがあることから、その電子移動度にばらつきが生じる可能性がある。前述したように、ポリシリコン薄膜２２の電子移動度は、当該ポリシリコン薄膜２２に最後に照射されたレーザ光１４のエネルギ密度、すなわち最後のショットのエネルギ密度に依存するからである。 Since the energy density of the laser beam 14 varies from shot to shot, the polysilicon thin film 22 may vary in its electron mobility. This is because the electron mobility of the polysilicon thin film 22 depends on the energy density of the laser beam 14 last irradiated on the polysilicon thin film 22, that is, the energy density of the last shot, as described above.
　レーザ照射装置１０は、アモルファスシリコン薄膜２１にレーザ光１４を照射する。ここで、レーザ照射装置１０は所定の周期でレーザ光１４を照射し、レーザ光１４が照射されていない時間にガラス基板３０を移動させ、次のアモルファスシリコン薄膜２１の箇所に当該レーザ光１４が照射されるようにする。図４に示すように、ガラス基板３０は、移動方向に対して、所定の間隔「Ｈ」でアモルファスシリコン薄膜２１が配置される。そして、レーザ照射装置１０は、所定の周期で、ガラス基板３０上に配置されたアモルファスシリコン薄膜２１の部分に、レーザ光１４を照射する。 The laser irradiation apparatus 10 irradiates the amorphous silicon thin film 21 with the laser beam 14. Here, the laser irradiation apparatus 10 irradiates the laser beam 14 at a predetermined cycle, moves the glass substrate 30 during a time when the laser beam 14 is not irradiated, and the laser beam 14 is applied to the next amorphous silicon thin film 21. Let it be irradiated. As shown in FIG. 4, the amorphous silicon thin film 21 is arranged on the glass substrate 30 at a predetermined interval “H” with respect to the moving direction. And the laser irradiation apparatus 10 irradiates the part of the amorphous silicon thin film 21 arrange | positioned on the glass substrate 30 with the laser beam 14 with a predetermined period.
　そして、レーザ照射装置１０は、マイクロレンズアレイ１３を用いて、ガラス基板上の複数のアモルファスシリコン薄膜２１に対して、同一のレーザ光１４を照射する。レーザ照射装置１０は、例えば、図４に示す領域Ａに含まれる複数のアモルファスシリコン薄膜２１に対して、同一のレーザ光１４を照射する。また、レーザ照射装置１０は、図４に示す領域Ｂに含まれる複数のアモルファスシリコン薄膜２１に対しても、同一のレーザ光１４を照射する。 And the laser irradiation apparatus 10 irradiates the same laser beam 14 to the plurality of amorphous silicon thin films 21 on the glass substrate using the microlens array 13. The laser irradiation apparatus 10 irradiates, for example, the same laser light 14 to a plurality of amorphous silicon thin films 21 included in the region A shown in FIG. Moreover, the laser irradiation apparatus 10 irradiates the same laser beam 14 also to the plurality of amorphous silicon thin films 21 included in the region B shown in FIG.
　ここで、レーザ照射装置１０は、アニール化を行うために、図２に示すマイクロレンズアレイ１３の一列（又は一行）に含まれる２０個のマイクロレンズ１７の各々を用いて、レーザ光１４を照射することが考えられる。 Here, the laser irradiation apparatus 10 irradiates the laser beam 14 using each of the 20 microlenses 17 included in one row (or one row) of the microlens array 13 shown in FIG. 2 in order to perform annealing. It is possible to do.
　この場合、図４の領域Ａにある複数のアモルファスシリコン薄膜２１は、まず、図２に示すマイクロレンズアレイ１３に含まれる第１のマイクロレンズ１７ａを用いて、レーザ光１４を照射される。その後、ガラス基板３０を所定の間隔「Ｈ」だけ移動させる。ガラス基板３０が移動している間、レーザ照射装置１０は、レーザ光１４の照射を停止する。そして、ガラス基板３０が「Ｈ」だけ移動した後、領域Ａにある複数のアモルファスシリコン薄膜２１は、図２に示すマイクロレンズアレイ１３に含まれる第２のマイクロレンズ１７ｂを用いて、レーザ光１４を照射される。なお、レーザ照射装置１０は、ガラス基板３０が「Ｈ」だけ移動した後、一旦停止した当該ガラス基板３０に対してレーザ光１４を照射してもよいし、移動し続けている当該ガラス基板３０に対してレーザ光１４を照射してもよい。 In this case, the plurality of amorphous silicon thin films 21 in the region A in FIG. 4 are first irradiated with the laser beam 14 using the first microlens 17a included in the microlens array 13 shown in FIG. Thereafter, the glass substrate 30 is moved by a predetermined interval “H”. While the glass substrate 30 is moving, the laser irradiation apparatus 10 stops the irradiation of the laser light 14. Then, after the glass substrate 30 has moved by “H”, the plurality of amorphous silicon thin films 21 in the region A are subjected to laser light 14 using the second microlens 17b included in the microlens array 13 shown in FIG. Irradiated. The laser irradiation apparatus 10 may irradiate the glass substrate 30 once stopped after the glass substrate 30 has moved by “H”, or may continue to move the glass substrate 30. May be irradiated with laser light 14.
　なお、レーザ照射装置１０の照射ヘッド（すなわち、レーザ光源１１、カップリング光学系１２、マイクロレンズアレイ１３及び投影マスク１５０）が、ガラス基板３０に対して移動してもよい。 Note that the irradiation head (that is, the laser light source 11, the coupling optical system 12, the microlens array 13, and the projection mask 150) of the laser irradiation apparatus 10 may move with respect to the glass substrate 30.
　レーザ照射装置１０は、これを繰り返し実行して、最後に、領域Ａにある複数のアモルファスシリコン薄膜２１に対して、図２に示すマイクロレンズアレイ１３のマイクロレンズ１７ｔ（すなわち、最後のマイクロレンズ１７）を用いて、レーザ光１４を照射する。その結果、領域Ａにある複数のアモルファスシリコン薄膜２１は、図２に示すマイクロレンズアレイ１３の一列（又は一行）に含まれる２０個のマイクロレンズ１７の各々を用いて、レーザ光１４を照射されることになる。 The laser irradiation apparatus 10 repeatedly executes this, and finally, the microlenses 17t (that is, the last microlens 17) of the microlens array 13 shown in FIG. ) Is used to irradiate the laser beam 14. As a result, the plurality of amorphous silicon thin films 21 in the region A are irradiated with the laser beam 14 using each of the 20 microlenses 17 included in one row (or one row) of the microlens array 13 shown in FIG. Will be.
　同様にして、レーザ照射装置１０は、図４の領域Ｂにある複数のアモルファスシリコン薄膜２１に対しても、図２に示すマイクロレンズアレイ１３の一列（又は一行）に含まれる２０個のマイクロレンズ１７の各々を用いて、レーザ光１４を照射する。ただ、領域Ｂは、領域Ａに比べてガラス基板の移動方向に対して「Ｈ」だけ位置が異なるため、レーザ光１４が照射されるタイミングが、１照射分だけ遅れる。すなわち、領域Ａの複数のアモルファスシリコン薄膜２１が第２のマイクロレンズ１７ｂを用いてレーザ光１４を照射される時に、領域Ｂの複数のアモルファスシリコン薄膜２１は、第１のマイクロレンズ１７ａを用いてレーザ光１４を照射される。そして、領域Ａの複数のアモルファスシリコン薄膜２１が第２０のマイクロレンズ１７ｔ（すなわち、最後のマイクロレンズ１７）を用いてレーザ光１４を照射される時には、領域Ｂの複数のアモルファスシリコン薄膜２１は、一つ前の第１９のマイクロレンズ１７ｓを用いて、レーザ光が照射されることになる。そして、領域Ｂの複数のアモルファスシリコン薄膜２１は、次のレーザ光の照射のタイミングで、第２０のマイクロレンズ１７ｔ（すなわち、最後のマイクロレンズ１７）を用いて、レーザ光が照射されることになる。 Similarly, the laser irradiation apparatus 10 applies 20 microlenses included in one row (or one row) of the microlens array 13 shown in FIG. 2 to the plurality of amorphous silicon thin films 21 in the region B of FIG. Each of 17 is irradiated with laser light 14. However, since the position of the region B is different from that of the region A by “H” with respect to the moving direction of the glass substrate, the timing of irradiation with the laser light 14 is delayed by one irradiation. That is, when the plurality of amorphous silicon thin films 21 in the region A are irradiated with the laser light 14 using the second microlens 17b, the plurality of amorphous silicon thin films 21 in the region B use the first microlens 17a. Laser light 14 is irradiated. When the amorphous silicon thin films 21 in the region A are irradiated with the laser light 14 using the twentieth micro lens 17t (that is, the last micro lens 17), the amorphous silicon thin films 21 in the region B are Laser light is irradiated using the previous nineteenth microlens 17s. The plurality of amorphous silicon thin films 21 in the region B are irradiated with laser light using the twentieth microlens 17t (that is, the last microlens 17) at the timing of the next laser light irradiation. Become.
　つまり、図４に示す領域Ａに含まれる複数のアモルファスシリコン薄膜２１と、領域Ｂに含まれる複数のアモルファスシリコン薄膜２１とは、最後に照射されるレーザ光１４が異なることになる。 That is, the last irradiated laser beam 14 differs between the plurality of amorphous silicon thin films 21 included in the region A shown in FIG. 4 and the plurality of amorphous silicon thin films 21 included in the region B.
　ここで、エキシマレーザにおいて、パルス間の安定性は、０．５％程度である。すなわち、レーザ照射装置１０は、１ショットごとに、そのレーザ光１４のエネルギ密度に０．５％程度のばらつきを生じさせる。そのため、レーザ照射装置１０によって形成されるポリシリコン薄膜２２の電子移動度にも、ばらつきが生じてしまう可能性がある。そして、レーザ光１４を照射されたことにより形成されたポリシリコン薄膜２２の電子移動度は、当該ポリシリコン薄膜２２に最後に照射されたレーザ光１４のエネルギ密度、すなわち最後のショットのエネルギ密度に依存する。 Here, in the excimer laser, the stability between pulses is about 0.5%. That is, the laser irradiation apparatus 10 causes a variation of about 0.5% in the energy density of the laser light 14 for each shot. For this reason, the electron mobility of the polysilicon thin film 22 formed by the laser irradiation apparatus 10 may also vary. The electron mobility of the polysilicon thin film 22 formed by irradiating the laser beam 14 is equal to the energy density of the laser beam 14 last irradiated to the polysilicon thin film 22, that is, the energy density of the last shot. Dependent.
　そのため、領域Ａに含まれる複数のアモルファスシリコン薄膜２１と、領域Ｂに含まれる複数のアモルファスシリコン薄膜２１とは、最後に照射されるレーザ光が異なるため、形成されるポリシリコン薄膜２２の電子移動度が互いに異なることになる。 For this reason, since the plurality of amorphous silicon thin films 21 included in the region A and the plurality of amorphous silicon thin films 21 included in the region B are different in the last irradiated laser beam, the electron movement of the formed polysilicon thin film 22 is different. The degrees will be different from each other.
　一方で、領域Ａに含まれる複数のアモルファスシリコン薄膜２１どうしは、最後に照射されたレーザ光１４は同じであるため、領域Ａ内においては、形成されるポリシリコン薄膜２２の電子移動度は同じとなる。これは、領域Ｂに含まれる複数のアモルファスシリコン薄膜２１どうしでも同様であり、領域Ｂ内においては、形成されるポリシリコン薄膜２２の電子移動度は同じとなる。すなわち、ガラス基板上において、互いに隣接する領域間では電子移動度が互いに異なるが、同じ領域内の複数のアモルファスシリコン薄膜２１どうしは電子移動度が同一となる。 On the other hand, since the last irradiated laser beam 14 is the same among the plurality of amorphous silicon thin films 21 included in the region A, the electron mobility of the formed polysilicon thin film 22 is the same in the region A. It becomes. This is the same for the plurality of amorphous silicon thin films 21 included in the region B. In the region B, the electron mobility of the formed polysilicon thin film 22 is the same. That is, on the glass substrate, the electron mobility differs between regions adjacent to each other, but the plurality of amorphous silicon thin films 21 in the same region have the same electron mobility.
　その結果、液晶画面において、表示むらが発生する原因となる。図４に例示するように、領域Ａと領域Ｂとの境界が“線状”であるため、互いに異なる特性の薄膜トランジスタ２０が、当該“線上”の境界において突き合うことなり、その特性の違いによる表示の違い（例えば色の濃淡などの違い）が“線”となって表れてしまう。その結果、液晶画面において表示むらが“すじ”となってしまい、無視できない程度に強調されてしまう。 As a result, uneven display occurs on the LCD screen. As illustrated in FIG. 4, since the boundary between the region A and the region B is “linear”, the thin film transistors 20 having different characteristics collide with each other at the “on-line” boundary, which is caused by the difference in the characteristics. Differences in display (for example, differences in color shading) appear as “lines”. As a result, the display unevenness on the liquid crystal screen becomes “streaks” and is emphasized to a degree that cannot be ignored.
　そこで、本発明の第１の実施形態では、例えば投影マスクパターン１５を用いて、基板３０に含まれるアモルファスシリコン薄膜２１の各々に照射するレーザ光１４の透過率を変更する。例えば、アモルファスシリコン薄膜２１に照射するレーザ光１４の透過率にばらつきを持たせる。なお、透過率は、レーザ光がマスク１５０を透過する割合である。 Therefore, in the first embodiment of the present invention, the transmittance of the laser light 14 applied to each of the amorphous silicon thin films 21 included in the substrate 30 is changed using, for example, the projection mask pattern 15. For example, the transmittance of the laser light 14 applied to the amorphous silicon thin film 21 is varied. Note that the transmittance is a ratio at which the laser light passes through the mask 150.
　上記のように、レーザ光１４の透過率をばらつかせることにより、アモルファスシリコン薄膜２１には、異なる透過率のレーザ光１４が照射されるようになり、全てのアモルファスシリコン薄膜２１に対して同一のレーザ光１４が照射されるという状況がなくなる。そのため、同一領域内（例えば領域Ａ内）に含まれる複数のアモルファスシリコン薄膜２１であっても、隣接するアモルファスシリコン薄膜２１が異なる透過率のレーザ光１４によって照射されるようになる。その結果、同一領域内（例えば領域Ａ内）において、隣接するアモルファスシリコン薄膜２１に最後に照射されるレーザ光１４の透過率が異なることになる。なお、隣接するアモルファスシリコン薄膜２１は、必ずしも異なる透過率のレーザ光１４が照射されるというわけではなく、投影マスクパターン１５におけるマスク１５０の配置によっては、同一の透過率のマスクが隣接することもあり、その場合には、隣接するアモルファスシリコン薄膜２１は同一の透過率のレーザ光１４が照射されることになる。ただし、基板３０に含まれるアモルファスシリコン薄膜２１全体を考えれば、投影マスクパターン１５において、異なる透過率のマスク１５０がランダムに配置されるため、隣接するアモルファスシリコン薄膜２１が異なる透過率のレーザ光１４によって照射される可能性は高くなる。 As described above, by varying the transmittance of the laser light 14, the amorphous silicon thin film 21 is irradiated with the laser light 14 having different transmittances, and the same is applied to all the amorphous silicon thin films 21. The situation where the laser beam 14 is irradiated is eliminated. For this reason, even if a plurality of amorphous silicon thin films 21 are included in the same region (for example, in region A), adjacent amorphous silicon thin films 21 are irradiated with laser beams 14 having different transmittances. As a result, in the same region (for example, in the region A), the transmittance of the laser light 14 finally irradiated to the adjacent amorphous silicon thin film 21 is different. The adjacent amorphous silicon thin films 21 are not necessarily irradiated with laser beams 14 having different transmittances. Depending on the arrangement of the mask 150 in the projection mask pattern 15, masks having the same transmittance may be adjacent to each other. In this case, the adjacent amorphous silicon thin film 21 is irradiated with the laser beam 14 having the same transmittance. However, considering the entire amorphous silicon thin film 21 included in the substrate 30, the masks 150 having different transmittances are randomly arranged in the projection mask pattern 15, so that the adjacent amorphous silicon thin films 21 have different transmittance laser beams 14. The possibility of irradiation is increased.
　そうすると、同一領域内（例えば領域Ａ内）において、隣接するポリシリコン薄膜２２の電子移動度は、互いに異なることとなる。その結果、同一領域内（例えば領域Ａ内）において、隣接する薄膜トランジスタ２０の特性も異なることになる。そうすると、ガラス基板３０全体において、互いに隣接する薄膜トランジスタ２０の特性は、互いに異なることになり、当該特性の違いによる表示の違い（例えば色の濃淡などの違い）が“線状”に表れることが無くなる。そのため、液晶画面において表示むらが“スジ”とならず、当該表示むらが強調されることを防止することができる。 Then, in the same region (for example, in region A), the electron mobility of the adjacent polysilicon thin film 22 is different from each other. As a result, the characteristics of the adjacent thin film transistors 20 are also different in the same region (for example, in the region A). Then, the characteristics of the thin film transistors 20 adjacent to each other in the entire glass substrate 30 are different from each other, and a display difference (for example, a difference in color shading) due to the difference in the characteristics does not appear “linearly”. . Therefore, the display unevenness on the liquid crystal screen does not become “streak”, and the display unevenness can be prevented from being emphasized.
　図５は、ガラス基板３０において隣接する薄膜トランジスタ２０による、表示むらの発生の有無を説明するための図である。図５（ａ）において、領域Ａ内の複数の薄膜トランジスタ２０の特性は特性Ａで同一であり、領域Ｂ内の複数の薄膜トランジスタ２０の特性は特性Ｂで同一である。その結果、領域Ａと領域Ｂの“線状”の境界において、特性Ａの薄膜トランジスタ２０と、特性Ｂの薄膜トランジスタ２０とが突き合うことになり、特性の違いによる表示の違いが、“線状”になって表れてしまう。そのため、液晶画面において表示むらが“スジ”となって強調されてしまう。 FIG. 5 is a diagram for explaining the presence or absence of display unevenness due to the adjacent thin film transistor 20 in the glass substrate 30. 5A, the characteristics of the plurality of thin film transistors 20 in the region A are the same as the characteristic A, and the characteristics of the plurality of thin film transistors 20 in the region B are the same as the characteristic B. As a result, the thin film transistor 20 with the characteristic A and the thin film transistor 20 with the characteristic B collide at the “linear” boundary between the region A and the region B, and the difference in display due to the difference in the characteristic is “linear”. Will appear. For this reason, the display unevenness on the liquid crystal screen is emphasized as “streaks”.
　一方、図５（ｂ）において、同一領域内（領域Ａ／領域Ｂ）の隣接する薄膜トランジスタ２０は、互いに異なる透過率のレーザ光１４で照射されることにより、互いに異なる特性となるため、特性の違いによる表示の違いが分散され、“線状”になって表れない。そのため、液晶画面において表示むらを低減することが可能となる。 On the other hand, in FIG. 5B, adjacent thin film transistors 20 in the same region (region A / region B) have different characteristics when irradiated with laser beams 14 having different transmittances. Differences in display due to differences are dispersed and do not appear “linear”. Therefore, display unevenness in the liquid crystal screen can be reduced.
　上述した内容を実現するために、本発明の第１の実施形態において、マイクロレンズアレイ１３上に設けられる投影マスクパターン１５は、レーザ光が透過する割合である透過率が設定された複数のマスク１５０を含む。そして、投影マスクパターン１５に含まれる複数のマスク１５０の各々は、複数の透過率のいずれかが設定される。複数の透過率は、例えば、９０％、９１％、９２％・・・１００％の１０通りの透過率のうちのいずれかである。なお、複数の透過率は、あくまでも例示であって、どのような透過率であってもよい。また、複数の透過率は、１０通りに限られず、何通りの透過率があってもよい。また、複数の透過率は、例えば、７０％～１００％の範囲など、どのような範囲であってもよい。複数の透過率の範囲は、予め定められた所定の範囲であってもよい。例えば、所定の範囲は、予め９０％～１００％に定められていてもよい。 In order to realize the above-described contents, in the first embodiment of the present invention, the projection mask pattern 15 provided on the microlens array 13 has a plurality of masks set with a transmittance that is a ratio of transmitting laser light. 150. Each of the plurality of masks 150 included in the projection mask pattern 15 is set to one of a plurality of transmittances. The plurality of transmittances are, for example, any one of 10 transmittances of 90%, 91%, 92%... 100%. The plurality of transmittances are merely examples, and any transmittance may be used. Further, the plurality of transmittances are not limited to ten, and there may be any number of transmittances. Further, the plurality of transmittances may be in any range such as a range of 70% to 100%. The plurality of transmittance ranges may be a predetermined range. For example, the predetermined range may be set in advance between 90% and 100%.
　また、投影マスクパターン１５において、異なる透過率が設定されたマスク１５０が、ランダムに配置される。 In the projection mask pattern 15, masks 150 having different transmittances are randomly arranged.
　図６は、本発明の第１の実施形態における、投影マスクパターン１５のマスク１５０の構成例を示す図である。 FIG. 6 is a diagram showing a configuration example of the mask 150 of the projection mask pattern 15 in the first embodiment of the present invention.
　図６に示すように、投影マスクパターン１５は、異なる透過率が設定されたマスク１５０が、ランダムに配置される。ただし、透過率の異なる投影マスクパターン１５の各々は、必ずしも、ランダムに配置される必要はなく、所定の条件に基づいて配置されてもよい。ここで、図６において、投影マスクパターン上に記載の数値は、当該投影マスクパターンにおけるレーザ光１４の透過率である。図６に示すように、投影マスクパターンの各々は、例えば、透過率が９０％～１００％のいずれかに設定される。なお、上述したように、投影マスクパターンの透過率は、９０～１００％の範囲内である必要はなく、どのような透過率であってもよい。 As shown in FIG. 6, in the projection mask pattern 15, masks 150 having different transmittances are randomly arranged. However, each of the projection mask patterns 15 having different transmittances is not necessarily arranged at random, and may be arranged based on a predetermined condition. Here, in FIG. 6, the numerical value described on the projection mask pattern is the transmittance of the laser beam 14 in the projection mask pattern. As shown in FIG. 6, each of the projection mask patterns is set to a transmittance of 90% to 100%, for example. As described above, the transmittance of the projection mask pattern does not need to be in the range of 90 to 100%, and may be any transmittance.
　なお、互いに隣接する投影マスクパターン１５が、互いに異なる透過率となるように配置されてもよい。なお、互いに隣接する投影マスクパターン１５が、必ずしも、互いに異なる透過率となるように配置される必要はない。 Note that the projection mask patterns 15 adjacent to each other may be arranged so as to have different transmittances. Note that the projection mask patterns 15 adjacent to each other are not necessarily arranged so as to have different transmittances.
　また、投影マスクパターン１５に含まれる複数のマスクの各々において、マイクロレンズアレイ１３の移動方向（所定の方向）に直交する一列において、互いに隣接するマスク１５０の透過率が互いに異なるように、当該マスク１５０を配置してもよい。この場合において、レーザ照射装置１０は、１つのアモルファスシリコン薄膜２１に対して、図２に示すマイクロレンズアレイ１３の一列（又は一行）に含まれる２０個のマイクロレンズ１７において、少なくとも隣接するマイクロレンズ１７から照射されるレーザ光１４の透過率を異なるものとなる。例えば、レーザ照射装置１０は、マイクロレンズアレイ１３の一列（又は一行）に含まれる２０個のマイクロレンズ１７の各々に、異なる透過率である投影マスクパターンを配置することにより、互いに異なるアモルファスシリコン薄膜２１に対し、互いに異なる透過率のレーザ光１４を照射することができる。 Further, in each of the plurality of masks included in the projection mask pattern 15, the masks 150 adjacent to each other are different from each other in one row orthogonal to the movement direction (predetermined direction) of the microlens array 13. 150 may be arranged. In this case, the laser irradiation apparatus 10 uses at least adjacent microlenses among the 20 microlenses 17 included in one row (or one row) of the microlens array 13 shown in FIG. The transmittance of the laser light 14 irradiated from 17 is different. For example, the laser irradiation apparatus 10 has different amorphous silicon thin films by disposing projection mask patterns having different transmittances on each of the 20 microlenses 17 included in one row (or one row) of the microlens array 13. 21 can be irradiated with laser beams 14 having different transmittances.
　また、各投影マスクパターン１５における透過領域１６の幅は、例えば４μｍである。また、図６に示す投影マスクパターン１５に設けられる開口部は、例えば、その形状が長方形であり、長辺が２０μｍであり、短辺が１０μｍである。なお、投影マスクパターン１５の開口部大きさは例示であって、マイクロレンズ１７の大きさに対応していれば、どのような大きさであってもよい。 Further, the width of the transmission region 16 in each projection mask pattern 15 is, for example, 4 μm. The opening provided in the projection mask pattern 15 shown in FIG. 6 has, for example, a rectangular shape, a long side of 20 μm, and a short side of 10 μm. The size of the opening of the projection mask pattern 15 is merely an example, and may be any size as long as it corresponds to the size of the microlens 17.
　図６の例では、ガラス基板３０の移動方向（スキャン方向）に対して、投影マスクパターン１５の透過領域１６は、直交するように設けられる。なお、投影マスクパターン１５の透過領域１６は、ガラス基板３０の移動方向（スキャン方向）に対して必ずしも直交する必要はなく、該移動方向（スキャン方向）に対して平行（略平行）に設けられていてもよい。 In the example of FIG. 6, the transmission region 16 of the projection mask pattern 15 is provided so as to be orthogonal to the moving direction (scanning direction) of the glass substrate 30. The transmission region 16 of the projection mask pattern 15 is not necessarily orthogonal to the movement direction (scan direction) of the glass substrate 30, and is provided in parallel (substantially parallel) to the movement direction (scan direction). It may be.
　レーザ照射装置１０は、図６に示す投影マスクパターン１５を用いて、図２に例示するガラス基板３０にレーザ光１４を照射するその結果、図３に示す同一領域内（例えば領域Ａ内）において、例えば、隣接するアモルファスシリコン薄膜２１が、互いに異なる透過率のレーザ光１４を照射されるようになる。そのため、同一領域内（例えば領域Ａ内）に含まれる複数のアモルファスシリコン薄膜２１について、例えば、隣接するアモルファスシリコン薄膜２１に最後に照射されるレーザ光１４も、その透過率が互いに異なることになる。その結果、同一領域内（例えば領域Ａ内）において、隣接するポリシリコン薄膜２２の電子移動度は、互いに異なることとなる。 The laser irradiation apparatus 10 uses the projection mask pattern 15 shown in FIG. 6 to irradiate the glass substrate 30 illustrated in FIG. 2 with the laser light 14, and as a result, in the same region (for example, in the region A) shown in FIG. For example, adjacent amorphous silicon thin films 21 are irradiated with laser beams 14 having different transmittances. Therefore, for a plurality of amorphous silicon thin films 21 included in the same region (for example, in region A), for example, the laser beam 14 finally irradiated to the adjacent amorphous silicon thin film 21 also has different transmittances. . As a result, in the same region (for example, in the region A), the electron mobility of the adjacent polysilicon thin films 22 is different from each other.
　そして、スキャン方向に直交する領域（図３に例示する領域Ａや領域Ｂ）間では、上述したように、照射されるレーザ光１４が異なるため、隣接する領域の薄膜トランジスタ２０は、互いに異なる特性となる。 Since the irradiated laser light 14 is different between the regions orthogonal to the scanning direction (region A and region B illustrated in FIG. 3), the thin film transistors 20 in the adjacent regions have different characteristics. Become.
　その結果、ガラス基板３０全体において、隣接する薄膜トランジスタ２０が、互いに異なる特性となる。そのため、薄膜トランジスタ２０の特性の違いによる表示の違い（例えば色の濃淡などの違い）が分散され、線状に表われなくなる。そのため、液晶画面において表示むらが“スジ”とならず、当該表示むらが強調されることを防止することができる。 As a result, adjacent thin film transistors 20 have different characteristics in the entire glass substrate 30. For this reason, display differences due to differences in the characteristics of the thin film transistor 20 (for example, differences in color shading) are dispersed and do not appear linearly. Therefore, the display unevenness on the liquid crystal screen does not become “streak”, and the display unevenness can be prevented from being emphasized.
　本発明の第１の実施形態において、ガラス基板３０は、１つのマイクロレンズ１７によりレーザ光１４が照射されるごとに、所定の距離だけ移動する。所定の距離は、図２に例示するように、ガラス基板３０における複数の薄膜トランジスタ２０間の距離「Ｈ」である。レーザ照射装置１０は、ガラス基板３０を当該所定の距離移動させる間、レーザ光１４の照射を停止する。 In the first embodiment of the present invention, the glass substrate 30 moves a predetermined distance each time the laser light 14 is irradiated by one microlens 17. As illustrated in FIG. 2, the predetermined distance is a distance “H” between the plurality of thin film transistors 20 on the glass substrate 30. The laser irradiation apparatus 10 stops the irradiation of the laser beam 14 while moving the glass substrate 30 by the predetermined distance.
　ガラス基板３０が所定の距離「Ｈ」を移動した後、レーザ照射装置１０は、マイクロレンズアレイ１３に含まれるマイクロレンズ１７を用いて、レーザ光１４を照射する。なお、本発明の第１の実施形態では、図６に示す投影マスクパターン１５を用いるため、１つのアモルファスシリコン薄膜２１に対して、５個のマイクロレンズ１７によりレーザ光１４が照射される。 After the glass substrate 30 has moved the predetermined distance “H”, the laser irradiation apparatus 10 irradiates the laser beam 14 using the microlens 17 included in the microlens array 13. In the first embodiment of the present invention, since the projection mask pattern 15 shown in FIG. 6 is used, the laser light 14 is irradiated to one amorphous silicon thin film 21 by five microlenses 17.
　そして、ガラス基板３０の薄膜トランジスタ２０に、レーザアニールを用いてポリシリコン薄膜２２を形成した後、別の工程において、当該薄膜トランジスタ２０に、ソース２３とドレイン２４とが形成される。 Then, after forming the polysilicon thin film 22 on the thin film transistor 20 on the glass substrate 30 by using laser annealing, the source 23 and the drain 24 are formed on the thin film transistor 20 in another process.
　このように、本発明の第１の実施形態では、投影マスクパターン１５において、異なる透過率のマスク１５０がランダムに配置されるように、当該投影マスクパターン１５に含まれる複数のマスク１５０の透過率を変更する。その結果、例えば、隣接するアモルファスシリコン薄膜２１が、互いに異なる透過率のレーザ光１４を照射されるようになる。そのため、隣接するポリシリコン薄膜２２の電子移動度は、互いに異なることとなる。すなわち、ガラス基板３０全体において、互いに隣接する薄膜トランジスタ２０の特性は、互いに異なることになり、当該特性の違いによる表示の違い（例えば色の濃淡などの違い）が“線状”に表れることが無くなる。そのため、液晶画面において表示むらが“スジ”とならず、当該表示むらが強調されることを防止することができる。 Thus, in the first embodiment of the present invention, the transmittances of the plurality of masks 150 included in the projection mask pattern 15 are arranged so that the masks 150 having different transmittances are randomly arranged in the projection mask pattern 15. To change. As a result, for example, adjacent amorphous silicon thin films 21 are irradiated with laser beams 14 having different transmittances. Therefore, the electron mobility of the adjacent polysilicon thin film 22 is different from each other. That is, the characteristics of the thin film transistors 20 adjacent to each other in the entire glass substrate 30 are different from each other, and a display difference (for example, a difference in color shading) due to the difference in the characteristics does not appear “linearly”. . Therefore, the display unevenness on the liquid crystal screen does not become “streak”, and the display unevenness can be prevented from being emphasized.
　（第２の実施形態）
　本発明の第２の実施形態は、マイクロレンズアレイ１３に含まれる複数のマイクロレンズ１７の各々の特性に基づいて、投影マスクパターン１５の各々の透過率を変化（調整）させる実施形態である。 (Second Embodiment)
The second embodiment of the present invention is an embodiment in which the transmittance of each projection mask pattern 15 is changed (adjusted) based on the characteristics of each of the plurality of microlenses 17 included in the microlens array 13.
　マイクロレンズアレイ１３に含まれる複数のマイクロレンズ１７の各々は、その特性が互いに異なる。例えば、マイクロレンズアレイ１３の中心付近に配置されるマイクロレンズ１７と、周辺部に配置されるマイクロレンズ１７とにおいて、その特性に偏りが生じる場合がある。そのため、複数のマクロレンズ１７の各々から照射されるレーザ光１４は、マイクロレンズ１７の特性が異なることに起因して、互いにその特性（例えば、エネルギ密度）が異なることとなる。そのため、レーザ照射装置１０は、マイクロレンズアレイ１３に含まれる複数のマイクロレンズ１７を用いて、同時にレーザ光１４を照射したとしても、当該複数のマイクロレンズ１７の各々の特性が互いに異なることにより、当該レーザ光１４の各々の特性（エネルギ密度など）が異なるものとなってしまう。 The characteristics of the plurality of microlenses 17 included in the microlens array 13 are different from each other. For example, the characteristics of the microlens 17 disposed near the center of the microlens array 13 and the microlens 17 disposed near the periphery may be biased. Therefore, the laser light 14 emitted from each of the plurality of macro lenses 17 has different characteristics (for example, energy density) due to the different characteristics of the micro lens 17. Therefore, even if the laser irradiation apparatus 10 uses the plurality of microlenses 17 included in the microlens array 13 and simultaneously irradiates the laser light 14, the characteristics of the plurality of microlenses 17 are different from each other. Each characteristic (energy density, etc.) of the laser beam 14 will be different.
　そこで、本発明の第２の実施形態は、マイクロレンズアレイ１３に含まれる複数のマイクロレンズ１７の各々の特性に基づいて、投影マスクパターン１５の各々の透過率を設定（調整）する。その結果、複数のマイクロレンズ１７の各々を用いて照射されるレーザ光１４の特性の違いを、低減することが可能となる。 Therefore, in the second embodiment of the present invention, the transmittance of each of the projection mask patterns 15 is set (adjusted) based on the characteristics of each of the plurality of microlenses 17 included in the microlens array 13. As a result, it is possible to reduce the difference in characteristics of the laser light 14 irradiated using each of the plurality of microlenses 17.
　図２に示すマイクロレンズアレイ１３に含まれる複数のマイクロレンズ１７の各々は、その特性が例えば５％の範囲で異なる。なお、５％はあくまでも例示であって、これ以上またはこれ以下の範囲で、複数のマイクロレンズアレイ１３の特性が異なることもある。マイクロレンズ１７の特性の違いは、例えば、当該マイクロレンズ１７の各々に対してレーザ光１４を照射し、その特性（例えば、エネルギ密度）を測定することにより、予め把握することが可能である。 The characteristics of each of the plurality of microlenses 17 included in the microlens array 13 shown in FIG. 2 differ within a range of 5%, for example. Note that 5% is merely an example, and the characteristics of the plurality of microlens arrays 13 may be different in a range above or below this. The difference in the characteristics of the microlenses 17 can be grasped in advance by, for example, irradiating each of the microlenses 17 with the laser light 14 and measuring the characteristics (for example, energy density).
　そこで、本発明の第２の実施形態では、予め把握したマイクロレンズ１７の各々の特性に基づいて、投影マスクパターン１５の各々の透過率を設定（調整）する。その結果、透過率を設定（調整）した投影マスクパターン１５を配置したマイクロレンズアレイ１３を用いてレーザ光１４を照射することにより、当該レーザ光１４の特性の違いを低減することが可能となる。 Therefore, in the second embodiment of the present invention, the transmittance of each projection mask pattern 15 is set (adjusted) based on the characteristics of each microlens 17 grasped in advance. As a result, by irradiating the laser beam 14 using the microlens array 13 on which the projection mask pattern 15 with the transmittance set (adjusted) is disposed, it is possible to reduce the difference in the characteristics of the laser beam 14. .
　例えば、一のマイクロレンズ１７を透過したレーザ光１４のエネルギ密度が高い場合には、当該一のマイクロレンズ１７に配置する投影マスクパターン１５の透過率を低く設定する。一方、他のマイクロレンズ１７を透過したレーザ光１４のエネルギ密度が低い場合には、当該他のマイクロレンズ１７に配置する投影マスクパターン１５の透過率を高く設定する。このように、マイクロレンズ１７の特性に応じて、当該マイクロレンズ１７に配置する投影マスクパターン１５の透過率を設定（調整）することにより、マイクロレンズ１７の特性の違いに起因するレーザ光１４の特性の違いを低減することが可能となる。 For example, when the energy density of the laser light 14 transmitted through one microlens 17 is high, the transmittance of the projection mask pattern 15 disposed on the one microlens 17 is set low. On the other hand, when the energy density of the laser light 14 transmitted through the other microlens 17 is low, the transmittance of the projection mask pattern 15 disposed on the other microlens 17 is set high. In this way, by setting (adjusting) the transmittance of the projection mask pattern 15 disposed on the microlens 17 according to the characteristics of the microlens 17, the laser light 14 caused by the difference in the characteristics of the microlens 17 can be obtained. Differences in characteristics can be reduced.
　図７は、マイクロレンズ１７の特性に基づいて透過率が設定（調整）されたマスク１５０を含む、投影マスクパターン１５である。図７の例は、マイクロレンズアレイ１３の中心付近に配置されるマイクロレンズ１７と、周辺部に配置されるマイクロレンズ１７とにおいて、その特性に偏りが生じている場合における、投影マスクパターン１５の例である。 FIG. 7 shows a projection mask pattern 15 including a mask 150 in which the transmittance is set (adjusted) based on the characteristics of the microlens 17. The example of FIG. 7 shows the projection mask pattern 15 when the characteristics of the microlens 17 arranged near the center of the microlens array 13 and the microlens 17 arranged near the periphery are biased. It is an example.
　図７に示すように、マイクロレンズの特性に基づいて、投影マスクパターン１５に含まれるマスク１５０の透過率が設定（調整）される。その結果、レーザ照射装置１０は、図７に例示する投影マスクパターンを用いてレーザ光１４を照射することにより、マイクロレンズアレイ１３に含まれるマイクロレンズ１７の特性に起因するレーザ光１４の特性の違いが低減され、概ね同一の特性のレーザ光１４を照射することができる。 As shown in FIG. 7, the transmittance of the mask 150 included in the projection mask pattern 15 is set (adjusted) based on the characteristics of the microlens. As a result, the laser irradiation apparatus 10 irradiates the laser light 14 using the projection mask pattern illustrated in FIG. 7, thereby improving the characteristics of the laser light 14 caused by the characteristics of the microlenses 17 included in the microlens array 13. The difference is reduced, and the laser beam 14 having substantially the same characteristics can be irradiated.
　上記のとおり、本発明の第２の実施形態は、マイクロレンズアレイ１３に含まれる複数のマイクロレンズ１７の各々の特性に基づいて、投影マスクパターン１５に含まれる複数のマスク１５０の各々の透過率を変化（調整）させることにより、マイクロレンズ１７の特性の違いに起因するレーザ光１４の特性の違いを低減することが可能となる。 As described above, in the second embodiment of the present invention, the transmittance of each of the plurality of masks 150 included in the projection mask pattern 15 is based on the characteristics of each of the plurality of microlenses 17 included in the microlens array 13. By changing (adjusting) the difference in characteristics of the laser light 14 due to the difference in characteristics of the microlens 17 can be reduced.
　（第３の実施形態）
　本発明の第３の実施形態は、マイクロレンズアレイ１３に含まれる複数のマイクロレンズ１７の各々の特性に基づいて、投影マスクパターン１５に含まれる複数のマスク１５０の透過率を変化（調整）した後に、レーザ光１４の透過率をばらつかせるために、当該マスク１５０の透過率をさらに変更する場合の実施形態である。 (Third embodiment)
In the third embodiment of the present invention, the transmittance of the plurality of masks 150 included in the projection mask pattern 15 is changed (adjusted) based on the characteristics of each of the plurality of microlenses 17 included in the microlens array 13. This is an embodiment in which the transmittance of the mask 150 is further changed in order to vary the transmittance of the laser light 14 later.
　第３の実施形態では、まず、マイクロレンズアレイ１３に含まれる複数のマイクロレンズ１７の各々の特性に基づいて、投影マスクパターン１５に含まれる複数のマスク１５０の透過率を変化（調整）する。その結果、マイクロレンズアレイ１３に含まれる複数のマイクロレンズ１７の各々の特性による、レーザ光１４の特性の違いが低減される。 In the third embodiment, first, the transmittance of the plurality of masks 150 included in the projection mask pattern 15 is changed (adjusted) based on the characteristics of each of the plurality of microlenses 17 included in the microlens array 13. As a result, the difference in the characteristics of the laser light 14 due to the characteristics of each of the plurality of microlenses 17 included in the microlens array 13 is reduced.
　その上で、第３の実施形態では、投影マスクパターン１５において、異なる透過率のマスク１５０がランダムに配置されるように、当該投影マスクパターン１５に含まれる複数のマスク１５０の透過率を変更する。その結果、例えば、隣接するアモルファスシリコン薄膜２１が、互いに異なる透過率のレーザ光１４を照射されるようになる。そのため、隣接するポリシリコン薄膜２２の電子移動度は、互いに異なることとなる。その結果、ガラス基板３０全体において、互いに隣接する薄膜トランジスタ２０の特性は、互いに異なることになり、当該特性の違いによる表示の違い（例えば色の濃淡などの違い）が“線状”に表れることが無くなる。そのため、液晶画面において表示むらが“スジ”とならず、当該表示むらが強調されることを防止することができる。 In addition, in the third embodiment, the transmittance of the plurality of masks 150 included in the projection mask pattern 15 is changed so that the masks 150 having different transmittances are randomly arranged in the projection mask pattern 15. . As a result, for example, adjacent amorphous silicon thin films 21 are irradiated with laser beams 14 having different transmittances. Therefore, the electron mobility of the adjacent polysilicon thin film 22 is different from each other. As a result, the characteristics of the thin film transistors 20 adjacent to each other in the entire glass substrate 30 are different from each other, and a display difference (for example, a difference in color shading) due to the difference in the characteristics may appear “linearly”. Disappear. Therefore, the display unevenness on the liquid crystal screen does not become “streak”, and the display unevenness can be prevented from being emphasized.
　第３の実施形態では、まず、図７に例示するように、マイクロレンズ１７の特性に基づいて、投影マスクパターン１５に含まれるマスク１５０の透過率を設定（調整）する。具体的には、予め把握したマイクロレンズ１７の各々の特性に基づいて、投影マスクパターン１５の各々の透過率を設定（調整）する。例えば、一のマイクロレンズ１７を透過したレーザ光１４のエネルギ密度が高い場合には、当該一のマイクロレンズ１７に配置する投影マスクパターン１５の透過率を低く設定する。一方、他のマイクロレンズ１７を透過したレーザ光１４のエネルギ密度が低い場合には、当該他のマイクロレンズ１７に配置する投影マスクパターン１５の透過率を高く設定する。 In the third embodiment, first, as illustrated in FIG. 7, the transmittance of the mask 150 included in the projection mask pattern 15 is set (adjusted) based on the characteristics of the microlens 17. Specifically, the transmittance of each projection mask pattern 15 is set (adjusted) based on the characteristics of each microlens 17 grasped in advance. For example, when the energy density of the laser light 14 transmitted through one microlens 17 is high, the transmittance of the projection mask pattern 15 arranged on the one microlens 17 is set low. On the other hand, when the energy density of the laser light 14 transmitted through the other microlens 17 is low, the transmittance of the projection mask pattern 15 disposed on the other microlens 17 is set high.
　その後、マイクロレンズ１７の特性に基づいて透過率が設定されたマスク１５０について、当該設定された透過率を基準として、投影マスクパターン１５全体で透過率が分散するように、当該マスク１５０の透過率をさらに変更する。 Thereafter, with respect to the mask 150 in which the transmittance is set based on the characteristics of the microlens 17, the transmittance of the mask 150 is dispersed so that the transmittance is dispersed throughout the projection mask pattern 15 with the set transmittance as a reference. Change further.
　例えば、マイクロレンズ１７の特性に基づいて、透過率が９０％に設定されたマスク１５０は、透過率を投影マスクパターン１５全体でばらつかせるために、当該マスク１５０に割り当てられた透過率変更の割合で、当該９０％の透過率をさらに変更する。例えば、透過率を投影マスクパターン１５全体でばらつかせるために割り当てられた透過率変更の割合が９５％である場合、当該マスク１５０は、９０％からさらに９５％透過率を変更することになり、８５．５％の透過率となる。 For example, the mask 150 whose transmittance is set to 90% based on the characteristics of the microlens 17 changes the transmittance assigned to the mask 150 so that the transmittance varies throughout the projection mask pattern 15. The 90% transmittance is further changed in proportion. For example, if the transmittance change ratio assigned to vary the transmittance across the projection mask pattern 15 is 95%, the mask 150 will change the transmittance from 90% to a further 95%. , 85.5% transmittance.
　このように、第３の実施形態では、マイクロレンズ１７の特性に基づいて設定された透過率を基準として、さらに、透過率を投影マスクパターン１５全体でばらつかせるために当該透過率を変更する。その結果、マイクロレンズアレイ１３に含まれる複数のマイクロレンズ１７の各々の特性による、レーザ光１４の特性の違いを低減しつつ、隣接するアモルファスシリコン薄膜２１に対して、互いに異なる透過率のレーザ光１４を照射することが可能となる。 As described above, in the third embodiment, the transmittance is changed with the transmittance set based on the characteristics of the microlens 17 as a reference, in order to further vary the transmittance in the entire projection mask pattern 15. . As a result, laser light having different transmittances with respect to the adjacent amorphous silicon thin film 21 while reducing the difference in the characteristics of the laser light 14 due to the characteristics of each of the plurality of microlenses 17 included in the microlens array 13. 14 can be irradiated.
　その結果、マイクロレンズ１７の特性に基づいて生じるレーザ光１４の特性の違いを低減しつつ、隣接するポリシリコン薄膜２２の電子移動度を互いに異ならせることができるため、ガラス基板３０全体において、互いに隣接する薄膜トランジスタ２０の特性は、互いに異なることになり、当該特性の違いによる表示の違い（例えば色の濃淡などの違い）が“線状”に表れることが無くなる。そのため、液晶画面において表示むらが“スジ”とならず、当該表示むらが強調されることを防止することができる。 As a result, it is possible to make the electron mobility of the adjacent polysilicon thin films 22 different from each other while reducing the difference in the characteristics of the laser light 14 generated based on the characteristics of the microlens 17. The characteristics of the adjacent thin film transistors 20 are different from each other, and a display difference (for example, a difference in color density) due to the difference in the characteristics does not appear “linearly”. Therefore, the display unevenness on the liquid crystal screen does not become “streak”, and the display unevenness can be prevented from being emphasized.
　（第４の実施形態）
　本発明の第４の実施形態は、マイクロレンズアレイ１３の代わりに、１個の投影レンズ１８を用いて、レーザアニールを行う場合の実施形態である。 (Fourth embodiment)
The fourth embodiment of the present invention is an embodiment in which laser annealing is performed using a single projection lens 18 instead of the microlens array 13.
　図８は、本発明の第４の実施形態におけるレーザ照射装置１０の構成例を示す図である。図８に示すように、本発明の第３の実施形態におけるレーザ照射装置１０は、レーザ光源１１と、カップリング光学系１２と、投影マスクパターン１５と、投影レンズ１８とを含む。なお、レーザ光源１１と、カップリング光学系１２とは、図１に示す本発明の第１の実施形態におけるレーザ光源１１と、カップリング光学系１２と同様の構成であるため、詳細な説明は省略される。また、投影マスクパターンは、本発明の第１の実施形態における投影マスクパターンと同様の構成であるため、詳細な説明は省略される。 FIG. 8 is a diagram illustrating a configuration example of the laser irradiation apparatus 10 according to the fourth embodiment of the present invention. As shown in FIG. 8, the laser irradiation apparatus 10 according to the third embodiment of the present invention includes a laser light source 11, a coupling optical system 12, a projection mask pattern 15, and a projection lens 18. The laser light source 11 and the coupling optical system 12 have the same configuration as the laser light source 11 and the coupling optical system 12 in the first embodiment of the present invention shown in FIG. Omitted. Further, since the projection mask pattern has the same configuration as the projection mask pattern in the first embodiment of the present invention, detailed description is omitted.
　レーザ光は、図６に例示する投影マスクパターン１５（図示しない）の開口（透過領域）を透過し、投影レンズ１８により、アモルファスシリコン薄膜２１の所定の領域に照射される。その結果、アモルファスシリコン薄膜２１の所定の領域が瞬間加熱されて溶融し、アモルファスシリコン薄膜２１の一部がポリシリコン薄膜２２となる。 Laser light passes through an opening (transmission region) of a projection mask pattern 15 (not shown) illustrated in FIG. 6 and is irradiated onto a predetermined region of the amorphous silicon thin film 21 by the projection lens 18. As a result, a predetermined region of the amorphous silicon thin film 21 is instantaneously heated and melted, and a part of the amorphous silicon thin film 21 becomes the polysilicon thin film 22.
　本発明の第４の実施形態においても、レーザ照射装置１０は所定の周期でレーザ光１４を照射し、レーザ光１４が照射されていない時間にガラス基板３０を移動させ、次のアモルファスシリコン薄膜２１の箇所に当該レーザ光１４が照射されるようにする。第２の実施形態においても、図３に示すように、ガラス基板３０は、移動方向に対して、所定の間隔「Ｈ」でアモルファスシリコン薄膜２１が配置される。そして、レーザ照射装置１０は、所定の周期で、ガラス基板３０上に配置されたアモルファスシリコン薄膜２１の部分に、レーザ光１４を照射する。 Also in the fourth embodiment of the present invention, the laser irradiation apparatus 10 irradiates the laser beam 14 at a predetermined cycle, moves the glass substrate 30 during the time when the laser beam 14 is not irradiated, and the next amorphous silicon thin film 21. The laser beam 14 is irradiated to the point. Also in the second embodiment, as shown in FIG. 3, the amorphous silicon thin film 21 is arranged on the glass substrate 30 at a predetermined interval “H” in the moving direction. And the laser irradiation apparatus 10 irradiates the part of the amorphous silicon thin film 21 arrange | positioned on the glass substrate 30 with the laser beam 14 with a predetermined period.
　ここで、投影レンズ１８を用いる場合、レーザ光１４が、当該投影レンズ１８の光学系の倍率で換算される。すなわち、投影マスクパターン１５のパターンが、投影レンズ１８の光学系の倍率で換算され、ガラス基板３０上の所定の領域がレーザアニールされる。 Here, when the projection lens 18 is used, the laser beam 14 is converted by the magnification of the optical system of the projection lens 18. That is, the pattern of the projection mask pattern 15 is converted by the magnification of the optical system of the projection lens 18, and a predetermined region on the glass substrate 30 is laser annealed.
　すなわち、投影マスクパターン１５のマスクパターンは、投影レンズ１８の光学系の倍率で換算され、ガラス基板３０上の所定の領域がレーザアニールされる。例えば、投影レンズ１８の光学系の倍率が約２倍であると、投影マスクパターン１５のマスクパターンは、約１／２（０．５）倍され、ガラス基板３０の所定の領域がレーザアニールされる。なお、投影レンズ１８の光学系の倍率は、約２倍に限られず、どのような倍率であってもよい。投影マスクパターン１５のマスクパターンは、投影レンズ１８の光学系の倍率に応じて、ガラス基板３０上の所定の領域がレーザアニールされる。例えば、投影レンズ１８の光学系の倍率が４倍であれば、投影マスクパターン１５のマスクパターンは、約１／４（０．２５）倍され、ガラス基板３０の所定の領域がレーザアニールされる。 That is, the mask pattern of the projection mask pattern 15 is converted by the magnification of the optical system of the projection lens 18, and a predetermined region on the glass substrate 30 is laser-annealed. For example, if the magnification of the optical system of the projection lens 18 is about 2 times, the mask pattern of the projection mask pattern 15 is about 1/2 (0.5) times, and a predetermined region of the glass substrate 30 is laser-annealed. The Note that the magnification of the optical system of the projection lens 18 is not limited to about twice, and may be any magnification. In the mask pattern of the projection mask pattern 15, a predetermined region on the glass substrate 30 is laser-annealed according to the magnification of the optical system of the projection lens 18. For example, if the magnification of the optical system of the projection lens 18 is 4, the mask pattern of the projection mask pattern 15 is multiplied by about 1/4 (0.25), and a predetermined region of the glass substrate 30 is laser annealed. .
　また、投影レンズ１８が倒立像を形成する場合、ガラス基板３０に照射される投影マスクパターン１５の縮小像は、投影レンズ１８のレンズの光軸を中心に１８０度回転したパターンとなる。一方、投影レンズ１８が正立像を形成する場合、ガラス基板３０に照射される投影マスクパターン１５の縮小像は、当該投影マスクパターン１５そのままとなる。 Further, when the projection lens 18 forms an inverted image, the reduced image of the projection mask pattern 15 irradiated on the glass substrate 30 is a pattern rotated 180 degrees around the optical axis of the lens of the projection lens 18. On the other hand, when the projection lens 18 forms an erect image, the reduced image of the projection mask pattern 15 irradiated on the glass substrate 30 is the projection mask pattern 15 as it is.
　なお、単一の投影レンズにおいて、例えば、収差等の影響で、中央部に比べて周辺部の照射光量や倍率が異なる場合でも、投影マスクパターン１５の中央部と周辺部でマスック１５０の透過率を変えることで均一な照射を実現できる。例えば、単一の照射レンズにおいて、中央部に比べて周辺部の照射光量が少ない場合は、投影マスクパターン１５の中央部のマスク１５０の透過率を高くし、一方で周辺部のマスク１５０の透過率を当該中央部の透過率に比べて低く設定することにより、投影マスクパターン１５０全体で均一な照射を実現することが可能となる。 Note that, in a single projection lens, for example, even when the irradiation light amount and magnification at the peripheral portion are different from those at the central portion due to aberrations or the like, the transmittance of the mask 150 at the central portion and the peripheral portion of the projection mask pattern 15. By changing the, uniform irradiation can be realized. For example, in a single irradiation lens, when the amount of irradiation light in the peripheral portion is smaller than that in the central portion, the transmittance of the mask 150 in the central portion of the projection mask pattern 15 is increased while the transmission of the mask 150 in the peripheral portion is increased. By setting the rate lower than the transmittance of the central portion, it is possible to achieve uniform irradiation over the entire projection mask pattern 150.
　上記のとおり、本発明の第４の実施形態では、１個の投影レンズ１８を用いて、レーザアニールを行った場合であっても、隣接するアモルファスシリコン薄膜２１に対して、互いに異なる透過率のレーザ光１４を照射することが可能となる。その結果、ガラス基板３０全体において、互いに隣接する薄膜トランジスタ２０の特性は、互いに異なることになり、当該特性の違いによる表示の違い（例えば色の濃淡などの違い）が“線状”に表れることが無くなる。そのため、液晶画面において表示むらが“スジ”とならず、当該表示むらが強調されることを防止することができる。 As described above, in the fourth embodiment of the present invention, even when laser annealing is performed using one projection lens 18, the adjacent amorphous silicon thin films 21 have different transmittances. Irradiation with the laser beam 14 is possible. As a result, the characteristics of the thin film transistors 20 adjacent to each other in the entire glass substrate 30 are different from each other, and a display difference (for example, a difference in color shading) due to the difference in the characteristics may appear “linearly”. Disappear. Therefore, the display unevenness on the liquid crystal screen does not become “streak”, and the display unevenness can be prevented from being emphasized.
　なお、以上の説明において、「垂直」「平行」「平面」「直交」等の記載がある場合に、これらの各記載は厳密な意味ではない。すなわち、「垂直」「平行」「平面」「直交」とは、設計上や製造上等における公差や誤差が許容され、「実質的に垂直」「実質的に平行」「実質的に平面」「実質的に直交」という意味である。なお、ここでの公差や誤差とは、本発明の構成・作用・効果を逸脱しない範囲における単位のことを意味するものである。 In the above description, when there are descriptions such as “vertical”, “parallel”, “plane”, and “orthogonal”, these descriptions are not strict meanings. In other words, “vertical”, “parallel”, “plane”, and “orthogonal” allow tolerances and errors in design, manufacturing, etc., and are “substantially vertical”, “substantially parallel”, “substantially plane”, “ It means “substantially orthogonal”. Here, the tolerance and error mean units in a range not departing from the configuration, operation, and effect of the present invention.
　（第５の実施形態）
　本発明の第５の実施形態は、マイクロレンズアレイ１３に含まれる複数のマイクロレンズ１７の各々の解像力に基づいて、当該解像力が相対的に低いマイクロレンズに対応する場所に位相シフトマスクを適用することにより、当該解像力が相対的に低いマイクロレンズ１７の解像力を高める実施形態である。 (Fifth embodiment)
In the fifth embodiment of the present invention, a phase shift mask is applied to a location corresponding to a micro lens having a relatively low resolution based on the resolution of each of the plurality of micro lenses 17 included in the micro lens array 13. This is an embodiment in which the resolving power of the micro lens 17 having a relatively low resolving power is increased.
　マイクロレンズアレイ１３に含まれる複数のマイクロレンズ１７の各々は、その特性の１つである解像力が互いに異なる場合がある。すなわち、マイクロレンズアレイ１３は、解像力が相対的に低いマイクロレンズ１７を含む場合がある。マイクロレンズ１７の解像力が低いと、隣接するマスクを透過した光が正しく解像せず、投影マスクパターン１５のパターンどおりにアニール化できない恐れがある。その結果、微結晶が薄膜トランジスタ２０のチャネル領域に乱れを生じさせ、液晶画面の表示に悪影響を与える可能性がある。 Each of the plurality of microlenses 17 included in the microlens array 13 may have different resolving power as one of its characteristics. That is, the microlens array 13 may include a microlens 17 having a relatively low resolution. If the resolving power of the microlens 17 is low, the light transmitted through the adjacent mask may not be correctly resolved and may not be annealed according to the pattern of the projection mask pattern 15. As a result, the microcrystal may disturb the channel region of the thin film transistor 20 and adversely affect the display of the liquid crystal screen.
　図９は、マイクロレンズアレイ１３に含まれるマイクロレンズ１７の構成例を示す図である。図９に示すマイクロレンズ１７のうち、例えば、灰色で示すマイクロレンズ１７は、他のマイクロレンズ１７（白色で示すマイクロレンズ１７）に比較して、解像力が相対的に低い。そのため、レーザ照射装置１０が、図９に例示するマイクロレンズアレイ１３を用いてレーザ光１４を照射すると、投影マスクパターン１５のパターン通りに薄膜トランジスタ２０のチャネル領域を適切にアニール化することができない恐れがある。 FIG. 9 is a diagram illustrating a configuration example of the microlens 17 included in the microlens array 13. Among the microlenses 17 shown in FIG. 9, for example, the microlens 17 shown in gray has a relatively low resolving power compared to other microlenses 17 (microlenses 17 shown in white). Therefore, when the laser irradiation apparatus 10 irradiates the laser beam 14 using the microlens array 13 illustrated in FIG. 9, the channel region of the thin film transistor 20 may not be appropriately annealed according to the pattern of the projection mask pattern 15. There is.
　一方で、解像力が相対的に低いマイクロレンズ１７の解像力を高くするために、マイクロレンズアレイ１３に含まれるマイクロレンズ１７全体の解像力を高くすることが考えられる。しかしながら、他のマイクロレンズ１７、すなわち解像力が相対的に低くないマイクロレンズ１７の解像力が必要以上に高まることになり、当該他のマイクロレンズ１７の焦点深度（ＤＯＦ：Ｄｅｐｔｈ　ｏｆ　Ｆｏｃｕｓ）が狭くなってしまう恐れがある。その結果、マイクロレンズアレイ１３を用いた薄膜トランジスタ２０のチャネル領域のアニール化のプロセスに、悪影響を与える可能性が生じる。したがって、マイクロレンズアレイ１３に含まれるマイクロレンズ１７全体の解像力を高くすることには限界がある。 On the other hand, in order to increase the resolving power of the micro lens 17 having a relatively low resolving power, it is conceivable to increase the resolving power of the entire micro lens 17 included in the micro lens array 13. However, the resolution of the other microlens 17, that is, the microlens 17 whose resolution is not relatively low, is increased more than necessary, and the depth of focus (DOF: Depth of Focus) of the other microlens 17 becomes narrower. There is a risk. As a result, the channel region annealing process of the thin film transistor 20 using the microlens array 13 may be adversely affected. Accordingly, there is a limit to increasing the resolution of the entire microlens 17 included in the microlens array 13.
　そこで、本発明の第５の実施形態では、マイクロレンズアレイ１３に含まれる複数のマイクロレンズ１７のうち、相対的に解像力が低いマイクロレンズ１７の解像力を高めるため、位相シフトマスクを用いる。具体的には、相対的に解像力が低いマイクロレンズ１７の部分に対して位相シフトマスクを適用し、当該相対的に解像力が低いマイクロレンズ１７の解像力を高める。その結果、相対的に解像力が低いマイクロレンズ１７の解像力が高まる一方、他のマイクロレンズ１７の解像力には当該位相シフトマスクを適用しないため、当該他のマイクロレンズ１７の解像力が必要以上に高めてしまうことがない。 Therefore, in the fifth embodiment of the present invention, a phase shift mask is used to increase the resolving power of the microlenses 17 having a relatively low resolving power among the plurality of microlenses 17 included in the microlens array 13. Specifically, a phase shift mask is applied to the portion of the micro lens 17 having a relatively low resolving power, and the resolving power of the micro lens 17 having a relatively low resolving power is increased. As a result, the resolving power of the microlens 17 having a relatively low resolving power is increased, while the phase shift mask is not applied to the resolving power of the other microlenses 17, so that the resolving power of the other microlenses 17 is increased more than necessary. There is no end.
　その結果、マイクロレンズ１３全体において複数のマイクロレンズ１７の各々の解像力の違いを低減可能であり、薄膜トランジスタ２０のアモルファスシリコンのアニール化を適切に実行でき（すなわち、マスクのパターン通りにアニール化を実行でき）、液晶画面の表示に悪影響を与えることを抑制することができる。 As a result, the difference in resolving power of each of the plurality of microlenses 17 can be reduced in the entire microlens 13, and the amorphous silicon annealing of the thin film transistor 20 can be appropriately executed (that is, the annealing is executed according to the mask pattern). Can adversely affect the display on the liquid crystal screen.
　図２に示すマイクロレンズアレイ１３に含まれる複数のマイクロレンズ１７の一部は、その解像力が他のマイクロレンズ１７と比較して、例えば１０％低い場合がある。なお、“１０％”は、あくまでも例示であって、これ以上またはこれ以下の範囲で、複数のマイクロレンズアレイ１３の各々の解像力が異なることもある。マイクロレンズ１７の解像力の違いは、例えば、当該マイクロレンズ１７の各々に対してレーザ光１４を照射し、その解像力を測定することにより、予め把握することが可能である。 The part of the plurality of microlenses 17 included in the microlens array 13 illustrated in FIG. 2 may have a resolution that is, for example, 10% lower than that of the other microlenses 17. Note that “10%” is merely an example, and the resolving power of each of the plurality of microlens arrays 13 may be different within this range or less. The difference in resolving power of the microlenses 17 can be grasped in advance by, for example, irradiating each of the microlenses 17 with the laser light 14 and measuring the resolving power.
　そこで、本発明の第５の実施形態では、予め把握したマイクロレンズ１７の各々の解像力に基づいて、所定の解像力未満のマイクロレンズ１７に対して、位相シフトマスクを適用する。 Therefore, in the fifth embodiment of the present invention, a phase shift mask is applied to the microlenses 17 having a resolution lower than a predetermined resolution based on the resolving power of each microlens 17 grasped in advance.
　所定の解像力は、例えば、複数のマイクロレンズ１７の解像力の平均値よりも、１０％以上低い解像力である。なお、１０％はあくまでも例示であって、どのような値でも良いことは言うまでもない。また、所定の解像力は、予め定められた解像力（固定値）であってもよい。当該予め定められた解像力（固定値）は、薄膜トランジスタ２０のアモルファスシリコンのアニール化を適切に実行可能な解像力である。 The predetermined resolving power is, for example, a resolving power that is 10% or more lower than the average value of the resolving power of the plurality of microlenses 17. Note that 10% is merely an example, and it is needless to say that any value may be used. The predetermined resolving power may be a predetermined resolving power (fixed value). The predetermined resolving power (fixed value) is a resolving power at which the amorphous silicon of the thin film transistor 20 can be appropriately annealed.
　また、位相シフトマスクを適用するマイクロレンズ１７は、複数のマイクロレンズ１７のうち解像力が最も高いマイクロレンズ１７との差分に基づいて決定してもよい。すなわち、最も高いマイクロレンズ１７の解像力と差分が、所定値以上であるマイクロレンズ１７に対して、位相シフトマスクを適用すると決定する。 Further, the micro lens 17 to which the phase shift mask is applied may be determined based on a difference from the micro lens 17 having the highest resolution among the plurality of micro lenses 17. That is, it is determined that the phase shift mask is applied to the microlens 17 whose resolution and difference of the highest microlens 17 are equal to or greater than a predetermined value.
　なお、位相シフトマスクを適用するマイクロレンズ１７は、どのように決定してもよく、隣接するマスクを透過した光が正しく解像せず、適切にアニール化できない恐れがあるマイクロレンズ１７を抽出できれば、どのような方法であってもよい。 Note that the microlens 17 to which the phase shift mask is applied may be determined in any way, and if the microlens 17 that may not be annealed properly because the light transmitted through the adjacent mask is not correctly resolved can be extracted. Any method may be used.
　図１０は、第５の実施形態におけるレーザ照射装置１０の構成例を示す図である。図１０に示すように、第５の実施形態におけるレーザ照射装置１０は、マイクロレンズアレイ１３上に、位相シフトマスク１９を含む。 FIG. 10 is a diagram illustrating a configuration example of the laser irradiation apparatus 10 according to the fifth embodiment. As shown in FIG. 10, the laser irradiation apparatus 10 in the fifth embodiment includes a phase shift mask 19 on the microlens array 13.
　位相シフトマスク（Ｐｈａｓｅ―Ｓｈｉｆｔｉｎｇ　Ｍａｓｋ：ＰＳＭ）１９は、レーザ光１４の位相や透過率を制御可能なマスクであり、マイクロレンズ１７の解像度や焦点深度を改善することができる。 A phase shift mask (Phase-Shifting Mask: PSM) 19 is a mask capable of controlling the phase and transmittance of the laser light 14 and can improve the resolution and the depth of focus of the microlens 17.
　位相シフトマスク１９には、例えば、ハーフトーン型位相シフトマスクがあり、マイクロレンズ１７を透過するレーザ光１４の位相を変化させることが可能なマスクである。ハーフトーン型位相シフトマスクでは、例えば、半透明な遮光膜（位相シフタ）をマイクロレンズ１７上に設けることにより、当該遮光膜を透過するレーザ光１４の伝搬速度を遅らせることにより、その分だけ当該レーザ光１４の位相を変化させる。そして、半透明な遮光膜を通過して位相が変化したレーザ光１４と、当該半透明な遮光膜を通過せずに位相が変化していないレーザ光１４とを干渉させることで、当該レーザ光１４の解像力を向上させることが可能となる。 The phase shift mask 19 is, for example, a halftone phase shift mask, which is a mask capable of changing the phase of the laser light 14 transmitted through the microlens 17. In the halftone phase shift mask, for example, by providing a translucent light-shielding film (phase shifter) on the microlens 17, the propagation speed of the laser light 14 passing through the light-shielding film is delayed, and accordingly, The phase of the laser beam 14 is changed. Then, the laser beam 14 whose phase has changed through the translucent light-shielding film interferes with the laser light 14 that has not passed through the semi-transparent light-shielding film and whose phase has not changed, thereby causing the laser light to interfere. The resolution of 14 can be improved.
　なお、第５の実施形態における位相シフトマスク１９は、上述した実施形態における投影マスクパターン１５のように、マイクロレンズアレイ１３に含まれるマイクロレンズ１７の各々について、薄膜トランジスタ２０のアモルファスシリコン領域にレーザ光１４を照射するためのパターンが設けられている。それに加えて、当該位相シフトマスク１９は、解像力が低いマイクロレンズ１７に対して、例えば位相シフタによって解像力を向上させることができる構成を備えるものである。 Note that the phase shift mask 19 in the fifth embodiment uses a laser beam in the amorphous silicon region of the thin film transistor 20 for each of the microlenses 17 included in the microlens array 13 like the projection mask pattern 15 in the above-described embodiment. The pattern for irradiating 14 is provided. In addition, the phase shift mask 19 has a configuration in which the resolution can be improved by, for example, a phase shifter with respect to the microlens 17 having a low resolution.
　第５の実施形態におけるレーザ照射装置１０では、マイクロレンズアレイ１３に含まれるマイクロレンズ１７のうち、解像力が相対的に低いマイクロレンズ１７に対して位相シフトマスク１９を適用する。具体的には、図９に示す解像力が相対的に低いマイクロレンズ１７（例えば、列１・行１０や列６・行７のマイクロレンズ１７）に対して、位相シフトマスク１９を適用する。その結果、解像力が相対的に低いマイクロレンズ１７の解像力を向上させることができ、位相シフトマスク１９のパターン通りに薄膜トランジスタ２０のチャネル領域を適切にアニール化することができる。 In the laser irradiation apparatus 10 according to the fifth embodiment, the phase shift mask 19 is applied to the microlens 17 having a relatively low resolution among the microlenses 17 included in the microlens array 13. Specifically, the phase shift mask 19 is applied to the microlenses 17 (for example, the microlenses 17 in the columns 1 and 10 and the columns 6 and 7) shown in FIG. As a result, the resolving power of the micro lens 17 having a relatively low resolving power can be improved, and the channel region of the thin film transistor 20 can be appropriately annealed according to the pattern of the phase shift mask 19.
　一方、他のマイクロレンズ１７（解像力が相対的に低くないマイクロレンズ１７）に対しては、位相シフトマスク１９を適用しない。その結果、解像力が相対的に低いマイクロレンズ１７については当該解像力が向上する一方、他のマイクロレンズ１７の解像力はそのままとなり必要以上に解像力が向上することはない。したがって、その結果、マイクロレンズ１３全体において複数のマイクロレンズ１７の各々の解像力の違いを低減可能である。 On the other hand, the phase shift mask 19 is not applied to the other microlenses 17 (microlenses 17 whose resolving power is not relatively low). As a result, the resolving power of the microlens 17 having a relatively low resolving power is improved, while the resolving power of the other microlenses 17 remains unchanged, and the resolving power is not improved more than necessary. Therefore, as a result, the difference in the resolving power of each of the plurality of microlenses 17 in the entire microlens 13 can be reduced.
　上記のとおり、本発明の第５の実施形態は、マイクロレンズ１３全体において複数のマイクロレンズ１７の各々の解像力の違いを低減可能であり、薄膜トランジスタ２０のアモルファスシリコンのアニール化を適切に実行でき（すなわち、マスクのパターン通りにアニール化を実行でき）、液晶画面の表示に悪影響を与えることを抑制することができる。 As described above, the fifth embodiment of the present invention can reduce the difference in resolution between each of the plurality of microlenses 17 in the entire microlens 13, and can appropriately perform the annealing of amorphous silicon in the thin film transistor 20 ( That is, annealing can be performed according to the mask pattern), and adverse effects on the display of the liquid crystal screen can be suppressed.
　また、以上の説明において、外観上の寸法や大きさが「同一」「等しい」「異なる」等の記載がある場合に、これらの各記載は厳密な意味ではない。すなわち、「同一」「等しい」「異なる」とは、設計上や製造上等における公差や誤差が許容され、「実質的に同一」「実質的に等しい」「実質的に異なる」という意味である。なお、ここでの公差や誤差とは、本発明の構成・作用・効果を逸脱しない範囲における単位のことを意味するものである。 Further, in the above description, when there are descriptions such as “same”, “equal”, “different”, etc., in terms of external dimensions and sizes, each of these descriptions is not a strict meaning. That is, “same”, “equal”, “different” means that tolerances and errors in design, manufacturing, etc. are allowed, and “substantially the same”, “substantially equal”, “substantially different”. . Here, the tolerance and error mean units in a range not departing from the configuration, operation, and effect of the present invention.
　本発明を諸図面や実施形態に基づき説明してきたが、当業者であれば本開示に基づき種々の変形や修正を行うことが容易であることに注意されたい。従って、これらの変形や修正は本発明の範囲に含まれることに留意されたい。例えば、各手段、各ステップ等に含まれる機能等は論理的に矛盾しないように再配置可能であり、複数の手段やステップ等を１つに組み合わせたり、或いは分割したりすることが可能である。また、上記実施の形態に示す構成を適宜組み合わせることとしてもよい。 Although the present invention has been described based on the drawings and embodiments, it should be noted that those skilled in the art can easily make various modifications and corrections based on the present disclosure. Therefore, it should be noted that these variations and modifications are included in the scope of the present invention. For example, the functions included in each means, each step, etc. can be rearranged so that there is no logical contradiction, and a plurality of means, steps, etc. can be combined or divided into one. . The structures described in the above embodiments may be combined as appropriate.
　１０　レーザ照射装置
　１１　レーザ光源
　１２　カップリング光学系
　１３　マイクロレンズアレイ
　１４　レーザ光
　１５　投影マスクパターン
　１６　透過領域
　１７　マイクロレンズ
　１８　投影レンズ
　１９　位相シフトマスク
　２０　薄膜トランジスタ
　２１　アモルファスシリコン薄膜
　２２　ポリシリコン薄膜
　２３　ソース
　２４　ドレイン
　３０　ガラス基板 DESCRIPTION OF SYMBOLS 10 Laser irradiation apparatus 11 Laser light source 12 Coupling optical system 13 Micro lens array 14 Laser light 15 Projection mask pattern 16 Transmission area 17 Micro lens 18 Projection lens 19 Phase shift mask 20 Thin film transistor 21 Amorphous silicon thin film 22 Polysilicon thin film 23 Source 24 Drain 30 glass substrate

Claims (13)

  1. 　レーザ光を発生する光源と、
    　ガラス基板上の複数の薄膜トランジスタの各々に被着されたアモルファスシリコン薄膜の所定の領域に、前記レーザ光を照射する投影レンズと、
    　前記投影レンズ上に設けられ、前記レーザ光が透過する割合である透過率が設定された複数のマスクを含む投影マスクパターンと、を備え、
    　前記投影レンズは、所定の方向に移動する前記ガラス基板上の前記複数の薄膜トランジスタに対して、前記投影マスクパターンに含まれる前記複数のマスクの各々を介して前記レーザ光を照射し、
    　前記投影マスクパターンに含まれる前記複数のマスクの各々は、複数の前記透過率のいずれかが設定される、レーザ照射装置。     A light source that generates laser light;
    A projection lens that irradiates the laser light to a predetermined region of the amorphous silicon thin film deposited on each of the plurality of thin film transistors on the glass substrate;
    A projection mask pattern including a plurality of masks provided on the projection lens and set to a transmittance that is a ratio at which the laser light is transmitted;
    The projection lens irradiates the plurality of thin film transistors on the glass substrate moving in a predetermined direction with the laser light through each of the plurality of masks included in the projection mask pattern,
    Each of the plurality of masks included in the projection mask pattern is a laser irradiation apparatus in which one of the plurality of transmittances is set.
  2. 　前記投影マスクパターンにおいて、異なる前記透過率が設定された前記マスクがランダムに配置されることを特徴とする請求項１に記載のレーザ照射装置。 The laser irradiation apparatus according to claim 1, wherein in the projection mask pattern, the masks having different transmittances are randomly arranged.
  3. 　前記投影マスクパターンに含まれる前記複数のマスクの各々は、予め定められた所定の範囲内に含まれる前記透過率のいずれかが設定されることを特徴とする請求項１または２に記載のレーザ照射装置。 3. The laser according to claim 1, wherein each of the plurality of masks included in the projection mask pattern is set with any one of the transmittances included in a predetermined range. Irradiation device.
  4. 　前記投影マスクパターンに含まれ、前記所定の方向に直交する一列において互いに隣接する前記マスクの各々は、互いに前記透過率が異なることを特徴とする請求項１乃至３のいずれかに記載のレーザ照射装置。 4. The laser irradiation according to claim 1, wherein each of the masks included in the projection mask pattern and adjacent to each other in a row orthogonal to the predetermined direction has a different transmittance. 5. apparatus.
  5. 　前記投影マスクパターンに含まれる前記複数のマスクの各々は、互いに前記透過率が異なることを特徴とする請求項１乃至４のいずれかに記載のレーザ照射装置。 5. The laser irradiation apparatus according to claim 1, wherein each of the plurality of masks included in the projection mask pattern has a different transmittance.
  6. 　前記投影レンズは、前記レーザ光を分離可能なマイクロレンズアレイに含まれる複数のマイクロレンズであり、
    　前記投影マスクパターンに含まれる前記複数のマスクの各々は、前記複数のマイクロレンズの各々に対応することを特徴とする請求項１乃至５のいずれかに記載のレーザ照射装置。     The projection lens is a plurality of microlenses included in a microlens array capable of separating the laser light,
    The laser irradiation apparatus according to claim 1, wherein each of the plurality of masks included in the projection mask pattern corresponds to each of the plurality of microlenses.
  7. 　前記投影マスクパターンは、前記マイクロレンズアレイに含まれる複数のマイクロレンズの各々の特性に基づいて、当該マイクロレンズの各々に対応する前記マスクの透過率が設定されることを特徴とする請求項６に記載のレーザ照射装置。 The transmittance of the mask corresponding to each of the microlenses is set in the projection mask pattern based on the characteristics of each of the plurality of microlenses included in the microlens array. The laser irradiation apparatus described in 1.
  8. 　前記投影マスクパターンは、前記マイクロレンズを透過するレーザ光の位相を変化させることにより、当該マイクロレンズの解像度を高める位相シフトマスクであり、
    　前記位相シフトマスクは、前記複数のマイクロレンズのうち、前記解像度に基づいて決定されたマイクロレンズを透過する前記レーザ光の位相を変化させ、当該マイクロレンズの解像度を高くすることを特徴とする請求項６または７に記載のレーザ光照射装置。     The projection mask pattern is a phase shift mask that increases the resolution of the microlens by changing the phase of the laser light transmitted through the microlens,
    The phase shift mask changes the phase of the laser beam that passes through a microlens determined based on the resolution among the plurality of microlenses, thereby increasing the resolution of the microlens. Item 8. The laser beam irradiation apparatus according to Item 6 or 7.
  9. 　前記位相シフトマスクは、前記複数のマイクロレンズのうち、相対的に解像度が低いマイクロレンズを透過する前記レーザ光の位相を変化させ、当該マイクロレンズの解像度を高くすることを特徴とする請求項６乃至８のいずれかに記載のレーザ光照射装置。 The said phase shift mask changes the phase of the said laser beam which permeate | transmits the micro lens with relatively low resolution among these micro lenses, The resolution of the said micro lens is made high. The laser beam irradiation apparatus in any one of thru | or 8.
  10. 　前記投影レンズは、薄膜トランジスタに含まれるソース電極とドレイン電極との間に被着されたアモルファスシリコン薄膜の所定の領域にレーザ光を照射して、ポリシリコン薄膜を形成することを特徴とする請求項１乃至９のいずれかに記載のレーザ照射装置。 The projection lens forms a polysilicon thin film by irradiating a predetermined region of an amorphous silicon thin film deposited between a source electrode and a drain electrode included in a thin film transistor, with a laser beam. The laser irradiation apparatus according to any one of 1 to 9.
  11. 　レーザ光を発生する第１のステップと、
    　ガラス基板上の複数の薄膜トランジスタの各々に被着されたアモルファスシリコン薄膜の所定の領域に、前記レーザ光が透過する割合である透過率が設定された複数のマスクを含む投影マスクパターンが設けられた投影レンズを用いて、前記レーザ光を照射する第２のステップと、
    　前記レーザ光が照射されるごとに、前記ガラス基板を所定の方向に移動する第３のステップと、を含み、
    　第２のステップにおいて、複数の前記透過率のいずれかが設定された複数の前記マスクを含む前記投影マスクパターンを介して、前記レーザ光を照射する、薄膜トランジスタの製造方法。     A first step of generating laser light;
    A projection mask pattern including a plurality of masks each having a transmittance that is a ratio of transmitting the laser light is provided in a predetermined region of the amorphous silicon thin film deposited on each of the plurality of thin film transistors on the glass substrate. A second step of irradiating the laser beam using a projection lens;
    A third step of moving the glass substrate in a predetermined direction each time the laser beam is irradiated,
    In the second step, the method of manufacturing a thin film transistor, wherein the laser light is irradiated through the projection mask pattern including the plurality of masks in which any one of the plurality of transmittances is set.
  12. 　第２のステップにおいて、異なる前記透過率が設定された前記マスクがランダムに配置された前記投影マスクパターンを介して、前記レーザ光を照射することを特徴とする請求項１１に記載の薄膜トランジスタの製造方法。 12. The thin film transistor according to claim 11, wherein, in the second step, the laser beam is irradiated through the projection mask pattern in which the masks having different transmittances are randomly arranged. Method.
  13. 　第２のステップにおいて、予め定められた所定の範囲内に含まれる前記透過率のいずれかが設定された前記マスクを含む前記投影マスクパターンを介して、前記レーザ光を照射することを特徴とする請求項１１または１２に記載の薄膜トランジスタの製造方法。 In the second step, the laser light is irradiated through the projection mask pattern including the mask in which any one of the transmittances included in a predetermined range is set. The manufacturing method of the thin-film transistor of Claim 11 or 12.
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