WO2018092213A1 - Laser irradiation device and thin-film transistor manufacturing method - Google Patents

Laser irradiation device and thin-film transistor manufacturing method Download PDF

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Publication number
WO2018092213A1
WO2018092213A1 PCT/JP2016/083972 JP2016083972W WO2018092213A1 WO 2018092213 A1 WO2018092213 A1 WO 2018092213A1 JP 2016083972 W JP2016083972 W JP 2016083972W WO 2018092213 A1 WO2018092213 A1 WO 2018092213A1
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Prior art keywords
thin film
mask pattern
projection mask
laser
projection
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PCT/JP2016/083972
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French (fr)
Japanese (ja)
Inventor
水村　通伸
伸武 野寺
吉明 松島
優数 田中
隆夫 松本
英俊 中川
Original Assignee
株式会社ブイ・テクノロジー
堺ディスプレイプロダクト株式会社
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Priority to PCT/JP2016/083972 priority Critical patent/WO2018092213A1/en
Priority to TW106139791A priority patent/TW201820731A/en
Publication of WO2018092213A1 publication Critical patent/WO2018092213A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

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  • the present invention relates to the formation of a thin film transistor, and more particularly to a laser irradiation apparatus, a thin film transistor, and a method for manufacturing the thin film transistor for forming a polysilicon thin film by irradiating an amorphous silicon thin film on the thin film transistor with a laser beam.
  • Patent Document 1 can use a semiconductor laser that can be continuously driven and has excellent output stability, and can form a polysilicon film having good crystal characteristics and high carrier mobility with high reproducibility and high speed. A laser irradiation apparatus is described.
  • Patent Document 1 As shown in FIG. 10, a transparent substrate is operated in the X direction (vertical direction) by a scanner having a laser irradiation head for annealing, and then one step is performed in the Y direction (horizontal direction). It is disclosed that the entire transparent substrate is annealed by a plurality of scans by repeating scanning and moving, such as moving and scanning in the X direction (vertical direction) again.
  • the laser irradiation apparatus disclosed in Patent Document 1 performs the annealing process by scanning the entire transparent substrate while connecting the annealing processes. Therefore, on the transparent substrate that has been annealed, there is a joint (a joining region) between the region annealed in one scan and the region annealed in the next scan.
  • the laser irradiation apparatus of Patent Document 1 scans in the X direction (vertical direction), then moves one step in the Y direction (horizontal direction), and scans again in the X direction.
  • the joints (joint areas) become “linear”.
  • the joint (joint region) is recognized as “joint unevenness”.
  • the object of the present invention has been made in view of such problems, and even when the entire substrate is annealed by a plurality of scans, the joints (joining regions) between the annealing processes are linear. Is provided, and a laser irradiation apparatus, a laser irradiation method, and a program capable of suppressing the occurrence of unevenness in connection are provided.
  • a laser irradiation apparatus irradiates a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate with a light source that generates laser light.
  • the projection lens when the annealing process for the predetermined direction on the glass substrate is completed, after moving in the direction orthogonal to the predetermined direction, the projection lens performs the annealing process for the predetermined direction again,
  • the projection mask pattern has the number of openings in the orthogonal direction from the outer row to the inner row of the projection mask pattern. And characterized by increasing people on.
  • the projection mask pattern gradually increases the number of the opening portions from the outer row to the inner row in the orthogonal direction.
  • the openings may be arranged in steps in rows adjacent to each other.
  • the projection lens is a microlens array including a plurality of microlenses
  • the projection mask pattern includes a set of rows corresponding to each other in the orthogonal direction
  • the total number of the openings provided in each of the pair of rows corresponding to each other may be the number of the plurality of microlenses included in one row of the microlens array.
  • the projection mask pattern is configured such that each of the pair of columns corresponding to each other is opposite to the center line in the predetermined direction in the projection mask pattern. It is good also as arranging.
  • the laser irradiation apparatus may be characterized in that the projection mask pattern is arranged such that each of the set of columns corresponding to each other is arranged at an equal distance from the center line.
  • the projection lens irradiates a predetermined region of the amorphous silicon thin film deposited between the source electrode and the drain electrode included in the thin film transistor with a laser beam.
  • a silicon thin film may be formed.
  • a thin film transistor manufacturing method includes a first step of generating laser light, and a plurality of openings in a predetermined region of an amorphous silicon thin film deposited on each of the plurality of thin film transistors on a glass substrate.
  • the second step of performing the annealing process by irradiating the laser beam using the projection lens provided with the projection mask pattern including the portion, and the annealing process for the predetermined direction on the glass substrate are completed.
  • the number of the openings is gradually increased from the outer row to the inner row in the projection mask pattern.
  • the laser light may be irradiated through the projection mask pattern in which the openings are arranged in steps in adjacent rows.
  • the projection lens is a microlens array including a plurality of microlenses.
  • the projection lens includes a set of rows corresponding to each other in the orthogonal direction. The total number of the openings provided in each of the pair of rows corresponding to each other is the laser through the projection mask pattern, which is the number of the plurality of microlenses included in one row of the microlens array. It may be characterized by irradiating light.
  • each of the pair of corresponding columns is opposite to the center line in the predetermined direction in the projection mask pattern.
  • the laser light may be irradiated through the projection mask pattern arranged in the above.
  • the thin film transistor manufacturing method includes, in the second step, the laser through the projection mask pattern in which each of the pair of columns corresponding to each other is arranged at an equal distance from the center line. It may be characterized by irradiating light.
  • a predetermined region of the amorphous silicon thin film deposited between the source electrode and the drain electrode included in the thin film transistor is irradiated with laser light.
  • a polysilicon thin film may be formed.
  • the present invention even in the case where the entire substrate is annealed by a plurality of scans, it is possible to reduce the occurrence of joint unevenness by reducing the joint (joint region) between the annealing processes from being linear.
  • An irradiation apparatus, a thin film transistor, and a method for manufacturing the thin film transistor are provided.
  • FIG. 1 is a diagram illustrating a configuration example of a laser irradiation apparatus 10 according to the first embodiment of the present invention.
  • the laser irradiation apparatus 10 performs annealing by irradiating only a channel region formation scheduled region with laser light, for example.
  • This is an apparatus for polycrystallizing a channel region formation planned region.
  • the laser irradiation device 10 is used, for example, when forming a thin film transistor of a pixel such as a peripheral circuit of a liquid crystal display device.
  • a gate electrode made of a metal film such as Al is formed on the glass substrate 30 by sputtering.
  • a gate insulating film made of a SiN film is formed on the entire surface of the glass substrate 30 by a low temperature plasma CVD method.
  • an amorphous silicon thin film 21 is formed on the gate insulating film by, for example, plasma CVD.
  • the laser irradiation apparatus 10 illustrated in FIG. 1 irradiates a predetermined region on the gate electrode of the amorphous silicon thin film 21 with the laser beam 14 and anneals to crystallize the predetermined region into polysilicon.
  • the beam system of the laser light emitted from the laser light source 11 is expanded by the coupling optical system 12, and the luminance distribution is made uniform.
  • the laser light source 11 is, for example, an excimer laser that emits laser light having a wavelength of 308 nm or 248 nm at a predetermined repetition period.
  • the laser beam is separated into a plurality of laser beams 14 by a plurality of openings (transmission regions) of a projection mask pattern 15 (not shown) provided on the microlens array 13, and a predetermined region of the amorphous silicon thin film 21 is obtained. Is irradiated.
  • the microlens array 13 is provided with a projection mask pattern 15, and the projection mask pattern 15 irradiates a predetermined region with laser light 14.
  • a predetermined region of the amorphous silicon thin film 21 is instantaneously heated and melted, and a part of the amorphous silicon thin film 21 becomes the polysilicon thin film 22.
  • the polysilicon thin film 22 has a higher electron mobility than the amorphous silicon thin film 21 and is used in the thin film transistor 20 in a channel region that electrically connects the source 23 and the drain 24.
  • FIG. 1 an example using the microlens array 13 is shown, but the microlens array 13 is not necessarily used, and the laser light 14 may be irradiated using one projection lens. .
  • the polysilicon thin film 22 is formed using the microlens array 13 will be described as an example.
  • FIG. 2 is a schematic diagram showing an example of the thin film transistor 20 in which a predetermined region is annealed.
  • the thin film transistor 20 is formed by first forming a polysilicon thin film 22 and then forming a source 23 and a drain 24 at both ends of the formed polysilicon thin film 22.
  • a polysilicon thin film 22 is formed between a source 23 and a drain 24.
  • the laser irradiation apparatus 10 irradiates one thin film transistor 20 with laser light 14 using, for example, 20 microlenses 17 included in one column (or one row) of the microlens array 13 illustrated in FIG. That is, the laser irradiation apparatus 10 irradiates the polysilicon thin film 22 with 20 shots of laser light 14.
  • a predetermined region of the amorphous silicon thin film 21 is instantaneously heated and melted to become a polysilicon thin film 22.
  • FIG. 3 is a schematic diagram showing an example of the glass substrate 30 on which the laser irradiation apparatus 10 irradiates the laser beam 14.
  • the glass substrate 30 includes a plurality of pixels 31, and each of the pixels 31 includes a thin film transistor 20.
  • the thin film transistor 20 performs light transmission control in each of a plurality of pixels 31 by electrically turning on and off.
  • the amorphous silicon thin film 21 is provided on the glass substrate 30 at a predetermined interval “H”.
  • the portion of the amorphous silicon thin film 21 is a portion that becomes the thin film transistor 20.
  • the laser irradiation apparatus 10 irradiates the amorphous silicon thin film 21 with the laser beam 14.
  • the laser irradiation apparatus 10 irradiates the laser beam 14 at a predetermined cycle, moves the glass substrate 30 during a time when the laser beam 14 is not irradiated, and the laser beam 14 is applied to the next amorphous silicon thin film 21. Let it be irradiated.
  • the amorphous silicon thin film 21 is arranged on the glass substrate 30 at a predetermined interval “H” with respect to the moving direction.
  • the laser irradiation apparatus 10 irradiates the part of the amorphous silicon thin film 21 arrange
  • the laser irradiation apparatus 10 irradiates the same laser beam 14 to the plurality of amorphous silicon thin films 21 on the glass substrate using the microlens array 13.
  • the laser irradiation apparatus 10 irradiates, for example, the same laser light 14 to a plurality of amorphous silicon thin films 21 included in the region A shown in FIG.
  • the laser irradiation apparatus 10 irradiates the same laser beam 14 also to the plurality of amorphous silicon thin films 21 included in the region B shown in FIG.
  • FIG. 4 is a diagram showing a configuration example of the microlens array 13 used for annealing.
  • 20 microlenses 17 are arranged in one column (or one row) in the scanning direction.
  • the laser irradiation apparatus 1 irradiates one thin film transistor 20 with the laser beam 14 by using at least a part of the 20 microlenses 17 included in one column (or one row) of the microlens array 13.
  • the number of microlenses 17 in one row (or one row) included in the microlens array 13 is not limited to 20 and may be any number.
  • the microlens array 13 includes 20 microlenses 17 in one column (or one row) in the scanning direction, but in one row (or one column) in the direction (orthogonal direction) orthogonal to the scanning direction, for example, Contains 83. It is needless to say that 83 is an example, and any number is possible.
  • the number of microlenses 17 that can be included in one row (or one column) in the direction orthogonal to the scanning direction of the microlens array depends on the output of the laser light 14 from the laser irradiation device 10. Therefore, in order to perform laser annealing on the entire glass substrate, the laser irradiation apparatus 10 scans in the scanning direction and then moves by one step (long side of the microlens array) in the direction orthogonal to the scanning direction. It is necessary to repeat scanning in the scanning direction again. Therefore, a “linear” joint (a joint region) exists between the region annealed in one scan and the region annealed in the next scan. In this way, if the laser beam 14 is irradiated in such a manner that “linear” joints (joint areas) appear, the joints (joint areas) are recognized as “joint unevenness” on the liquid crystal screen.
  • the openings of the projection mask pattern 15 provided on the microlens array 13 are arranged so as to be stepped (stepped) from the outside to the inside. .
  • FIG. 5 is a diagram showing a configuration example of the projection mask pattern 15 in the first embodiment of the present invention.
  • the projection mask pattern 15 includes a mask 150 having an opening (region having an opening) and a mask 151 having no opening (region having no opening).
  • column 1 in FIG. 5 includes one mask 150 having an opening.
  • a mask 150 having an opening is arranged stepwise from one side parallel to the scanning direction to the inside.
  • one mask 150 having an opening is arranged in the column 1 closest to the side A.
  • the projection mask pattern 15 includes a mask 150 having an opening at the position of “column 1, row 1”.
  • three masks 150 having openings are arranged in the column 2 adjacent to the column 1.
  • the projection mask pattern 15 includes a mask 150 having an opening in each of the rows 1 to 3 in the column 2.
  • five masks 150 having openings are arranged in the column 3 adjacent to the column 2.
  • the projection mask pattern 150 includes a mask 150 having an opening in each of the rows 1 to 5 in the column 3.
  • the openings are arranged in a staircase pattern (step shape) in rows adjacent to each other.
  • the number of openings arranged in each row may be any number, and is not limited to one for row 1, three for row 2, five for row 3, and so on.
  • one mask 150 having an opening is arranged in the highest row Z on the side B facing the side A.
  • the mask 150 having openings in the row Z is disposed on the projection mask pattern 15 at a position that is diagonal to the mask 150 having openings in the row 1.
  • the projection mask pattern 15 includes a mask 150 having an opening at the position of “column Z, row 20”, that is, the diagonal position of “column 1, row 1”.
  • three masks 150 having openings are arranged in the column Y adjacent to the column Z.
  • the mask 150 having openings in the column Y is arranged on the projection mask pattern 15 at a position that is diagonal to the mask 150 having openings in the column 2.
  • the column X adjacent to the column Y includes five masks 150 having openings. Also on the side B side, the masks 150 having openings are arranged so as to be stepped (stepped) in rows adjacent to each other. Note that the number of masks having openings arranged in each column may be any number, and is limited to one in column Z, three in column Y, five in column Z, and so on. is not.
  • the region scanned in the column 1 on the glass substrate 30 is irradiated only once with the laser beam. Therefore, in the glass substrate 30, the glass substrate 30 is moved in the Y direction so that the region scanned in the row 1 is scanned in the region corresponding to the row P (19 openings) in the next scan. Move to.
  • column 1 (one opening) corresponds to column Q (19 openings)
  • the glass substrate moves in the region scanned in column 1 on glass substrate 30. And then scanned in column Q.
  • the glass substrate 30 is irradiated with the laser light 14 a total of 20 times.
  • row 2 (3 openings) corresponds to row R (17 openings)
  • row 3 (5 openings) corresponds to row S (15 openings)
  • the glass substrate 30 is annealed in both corresponding rows. In this way, the entire glass substrate 30 is annealed by a total of 20 times of laser irradiation by scanning with the columns corresponding to each other.
  • FIG. 6 is a diagram for explaining the manner in which the glass substrate 30 is annealed by the microlens array 13 in which the projection mask pattern 15 illustrated in FIG. 5 is arranged. As shown in FIG. 6, after the laser irradiation apparatus 10 scans in the X direction, the glass substrate 30 moves one step in the Y direction, and the laser irradiation apparatus 10 scans in the X direction again.
  • the movement of the glass substrate 30 in the Y direction is performed by a distance that can be scanned in both rows corresponding to each other in the projection mask pattern 15.
  • the glass substrate 30 is placed so that the region scanned in “column 1” of the projection mask pattern 15 is scanned in “column Q” in the next scan in the X direction. Moving.
  • the irradiation head that is, the laser light source 11, the coupling optical system 12, the microlens array 13, and the projection mask 150
  • the irradiation head 10 may move with respect to the glass substrate 30.
  • the total number of “projection mask patterns including openings” included in the columns corresponding to each other is 20.
  • the projection masks 150 including the openings are arranged so that the total number of “projection masks 150 including the openings” included in the columns corresponding to each other is 20.
  • the distance that the glass substrate 30 moves depends on the size of the microlens array 13 and the number of microlenses 17 included in the microlens array 13, but can be set in advance.
  • FIG. 7 is a diagram for explaining “columns” corresponding to each other in the projection mask pattern 15 in FIG. 6.
  • column 1 one opening
  • column Q (19 openings)
  • row 5 3 openings
  • row U 15 openings
  • row 10 (19 openings) and row Z (openings). 1 part
  • the number of openings included in the mutually corresponding rows is 20 in total.
  • the glass substrate 30 moves in a direction (Y direction) orthogonal to the scanning direction (X direction) so that the laser light 14 is irradiated by rows corresponding to each other. For this reason, when the laser light 14 is irradiated using the microlens array 13 using the projection mask pattern 15, the thin film transistor 20 is irradiated with the laser light 14 20 times over the entire glass substrate 30.
  • FIG. 8 is a diagram for comparing the annealing process by the conventional laser irradiation apparatus 10 and the annealing process by the laser irradiation apparatus in the first embodiment of the present invention.
  • the nth X-direction scan area and the (n + 1) th X-direction scan area Is completely separated, so the boundary is clear. That is, in the conventional laser irradiation apparatus, there is a joint between the annealing processes performed by different scans in the glass substrate 30. The joint is recognized as “joint unevenness”.
  • the (n + 1) th X-direction is suddenly detected from the n-th X-direction scan region.
  • the ratio of the regions annealed by different scans gradually changes in a step shape (step shape). Therefore, unlike the case of the conventional laser irradiation apparatus as shown in FIG. 8A, there is no connection between the annealing processes performed by different scans. Since there are no joints, “joint unevenness” does not occur, and a high-quality liquid crystal screen or the like can be provided by performing the annealing treatment with the laser irradiation apparatus 10 in the first embodiment of the present invention.
  • the laser irradiation apparatus 10 irradiates the glass substrate 30 with the laser light 14 using the microlens array 13 provided with the projection mask pattern shown in FIG.
  • the glass substrate 30 moves (scans) a predetermined distance each time the laser light 14 is irradiated using the microlens array 13. As illustrated in FIG. 3, the predetermined distance is a distance “H” between the plurality of thin film transistors 20 on the glass substrate 30.
  • the laser irradiation apparatus 10 stops the irradiation of the laser beam 14 while moving the glass substrate 30 by the predetermined distance.
  • the laser irradiation apparatus 10 irradiates the laser beam 14 using the microlens array 13.
  • the laser irradiation apparatus 10 repeats the irradiation of the laser beam 14 using the microlens array 13 and the movement of the glass substrate 30, and then the vertical direction of the glass substrate 30 (scanning direction. That is, the direction of movement by a predetermined distance). ) Is annealed.
  • the glass substrate 30 moves one step (long side of the microlens array) in a direction orthogonal to the scanning direction.
  • the laser irradiation apparatus 10 stops the irradiation of the laser light 14 while moving the glass substrate 30 by one step.
  • the laser irradiation apparatus 10 irradiates the laser beam 14 using the microlens array 13 and performs an annealing process in the vertical direction of the glass substrate 30.
  • a source 23 and a drain 24 are formed in the thin film transistors 20 in another process.
  • the annealing process by the laser irradiation apparatus 10 in the first embodiment of the present invention there is no connection between the annealing processes performed by different scans. Since there are no joints, “joint unevenness” does not occur, and a high-quality liquid crystal screen or the like can be provided by performing the annealing treatment with the laser irradiation apparatus 10 in the first embodiment of the present invention.
  • the second embodiment of the present invention is an embodiment in which laser annealing is performed using one projection lens 18 instead of the microlens array 13.
  • FIG. 9 is a diagram illustrating a configuration example of the laser irradiation apparatus 10 according to the second embodiment of the present invention.
  • the laser irradiation apparatus 10 according to the second embodiment of the present invention includes a laser light source 11, a coupling optical system 12, a projection mask pattern 15, and a projection lens 18.
  • the laser light source 11 and the coupling optical system 12 have the same configuration as the laser light source 11 and the coupling optical system 12 in the first embodiment of the present invention shown in FIG. Omitted.
  • the projection mask pattern has the same configuration as the projection mask pattern in the first embodiment of the present invention, detailed description is omitted.
  • the laser light is transmitted through the opening (transmission region) of the projection mask pattern 15 as shown in FIG. 5, and is irradiated to a predetermined region of the amorphous silicon thin film 21 by the projection lens 18.
  • a predetermined region of the amorphous silicon thin film 21 is instantaneously heated and melted, and a part of the amorphous silicon thin film 21 becomes the polysilicon thin film 22.
  • the laser irradiation apparatus 10 irradiates the laser beam 14 at a predetermined cycle, moves the glass substrate 30 during the time when the laser beam 14 is not irradiated, and the next amorphous silicon thin film 21.
  • the laser beam 14 is irradiated to the point.
  • the amorphous silicon thin film 21 is arranged on the glass substrate 30 at a predetermined interval “H” in the moving direction.
  • the laser irradiation apparatus 10 irradiates the part of the amorphous silicon thin film 21 arrange
  • the laser beam 14 is converted by the magnification of the optical system of the projection lens 18. That is, the pattern of the projection mask pattern 15 is converted by the magnification of the optical system of the projection lens 18, and a predetermined region on the glass substrate 30 is laser annealed.
  • the mask pattern of the projection mask pattern 15 is converted by the magnification of the optical system of the projection lens 18, and a predetermined region on the glass substrate 30 is laser-annealed.
  • a predetermined region on the glass substrate 30 is laser-annealed.
  • the magnification of the optical system of the projection lens 18 is not limited to about twice, and may be any magnification.
  • a predetermined region on the glass substrate 30 is laser-annealed according to the magnification of the optical system of the projection lens 18. For example, if the magnification of the optical system of the projection lens 18 is 4, the mask pattern of the projection mask pattern 15 is multiplied by about 1/4 (0.25), and a predetermined region of the glass substrate 30 is laser annealed. .
  • the reduced image of the projection mask pattern 15 irradiated on the glass substrate 30 is a pattern rotated 180 degrees around the optical axis of the lens of the projection lens 18.
  • the reduced image of the projection mask pattern 15 irradiated on the glass substrate 30 is the projection mask pattern 15 as it is.
  • the pattern of the projection mask pattern 15 is reduced on the glass substrate 30 as it is.
  • the second embodiment of the present invention even when laser annealing is performed using one projection lens 18, a different scan is performed as in the first embodiment using the microlens array 13. There will be no seam between the annealing treatments made by. Since there are no joints, “joint unevenness” does not occur, and a high-quality liquid crystal screen or the like can be provided by performing the annealing treatment with the laser irradiation apparatus 10 in the second embodiment of the present invention.

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Abstract

When present on a substrate, joint lines between annealing treatments are often seen as uneven joints. This laser irradiation device is characterized by being provided with a light source which generates a laser, a projection lens which performs annealing treatment by irradiating said laser onto a prescribed region of an amorphous silicon thin film coated on each of multiple thin film transistors on a glass substrate, and a projection mask pattern which is provided on the projection lens and which has multiple openings such that the laser is irradiated onto each of said multiple thin film transistors; when annealing treatment in a prescribed direction on the glass substrate has been completed, the projection lens moves in a direction perpendicular to the aforementioned prescribed direction and then again performs the annealing treatment in said prescribed direction; in the projection mask pattern, the number of openings gradually increases in the aforementioned perpendicular direction from the outside rows of the projection mask pattern towards the inside rows.

Description

レーザ照射装置および薄膜トランジスタの製造方法Laser irradiation apparatus and thin film transistor manufacturing method
　本発明は、薄膜トランジスタの形成に関するものであり、特に、薄膜トランジスタ上のアモルファスシリコン薄膜にレーザ光を照射して、ポリシリコン薄膜を形成するためのレーザ照射装置、薄膜トランジスタおよび薄膜トランジスタの製造方法に関する。 The present invention relates to the formation of a thin film transistor, and more particularly to a laser irradiation apparatus, a thin film transistor, and a method for manufacturing the thin film transistor for forming a polysilicon thin film by irradiating an amorphous silicon thin film on the thin film transistor with a laser beam.
　逆スタガ構造の薄膜トランジスタとして、アモルファスシリコン薄膜をチャネル領域に使用したものが存在する。ただ、アモルファスシリコン薄膜は電子移動度が小さいため、当該アモルファスシリコン薄膜をチャネル領域に使用すると、薄膜トランジスタにおける電荷の移動度が小さくなるという難点があった。 There is an inverted staggered thin film transistor that uses an amorphous silicon thin film for the channel region. However, since the amorphous silicon thin film has a low electron mobility, there is a problem that when the amorphous silicon thin film is used for the channel region, the charge mobility in the thin film transistor is reduced.
　そこで、アモルファスシリコン薄膜の所定の領域をレーザ光により瞬間的に加熱することで多結晶化し、電子移動度の高いポリシリコン薄膜を形成して、当該ポリシリコン薄膜をチャネル領域に使用する技術が存在する。 In view of this, there is a technology in which a predetermined region of an amorphous silicon thin film is polycrystallized by instantaneously heating with a laser beam to form a polysilicon thin film having a high electron mobility and using the polysilicon thin film for a channel region. To do.
　例えば、特許文献１には、連続駆動が可能で出力安定性に優れた半導体レーザを用い、良好な結晶特性を備えキャリア移動度の高いポリシリコン膜を再現性良く且つ高速に形成することができるレーザ照射装置について記載されている。 For example, Patent Document 1 can use a semiconductor laser that can be continuously driven and has excellent output stability, and can form a polysilicon film having good crystal characteristics and high carrier mobility with high reproducibility and high speed. A laser irradiation apparatus is described.
　そして、特許文献１には、図１０に示すように、アニール用のレーザ照射ヘッドを備えたスキャナにより、透明基板をＸ方向（縦方向）に操作した後、Ｙ方向（横方向）に１ステップ移動し、再度Ｘ方向（縦方向）へ走査を行うというように、走査と移動とを繰り返して、透明基板の全体を複数の走査でアニール処理することが開示されている。 In Patent Document 1, as shown in FIG. 10, a transparent substrate is operated in the X direction (vertical direction) by a scanner having a laser irradiation head for annealing, and then one step is performed in the Y direction (horizontal direction). It is disclosed that the entire transparent substrate is annealed by a plurality of scans by repeating scanning and moving, such as moving and scanning in the X direction (vertical direction) again.
特開２００４－６４０６６号公報JP 2004-64066 A
　上記のとおり、特許文献１に開示されているレーザ照射装置は、アニール処理をつなぎながら透明基板全体を走査して、アニール処理を行っている。そのため、アニール処理された透明基板上には、１回の走査でアニール処理された領域と、次の走査でアニール処理された領域との間につなぎ目（つなぎ領域）が存在することになる。 As described above, the laser irradiation apparatus disclosed in Patent Document 1 performs the annealing process by scanning the entire transparent substrate while connecting the annealing processes. Therefore, on the transparent substrate that has been annealed, there is a joint (a joining region) between the region annealed in one scan and the region annealed in the next scan.
　そして、特許文献１のレーザ照射装置は、図１０に示すように、Ｘ方向（縦方向）に走査した後、Ｙ方向（横方向）に１ステップ移動し、再度Ｘ方向に走査するため、当該つなぎ目（つなぎ領域）が“線状”になってしまう。このように、基板上において“線状”のつなぎ目（つなぎ領域）が存在すると、そのつなぎ目（つなぎ領域）が“つなぎムラ”として認識されてしまう。 Then, as shown in FIG. 10, the laser irradiation apparatus of Patent Document 1 scans in the X direction (vertical direction), then moves one step in the Y direction (horizontal direction), and scans again in the X direction. The joints (joint areas) become “linear”. As described above, when a “linear” joint (joint region) exists on the substrate, the joint (joint region) is recognized as “joint unevenness”.
　本発明の目的は、かかる問題点に鑑みてなされたものであって、基板全体を複数の走査でアニール処理する場合であっても、アニール処理間のつなぎ目（つなぎ領域）が線状になることを低減し、つなぎムラの発生を抑制可能なレーザ照射装置、レーザ照射方法およびプログラムを提供することである。 The object of the present invention has been made in view of such problems, and even when the entire substrate is annealed by a plurality of scans, the joints (joining regions) between the annealing processes are linear. Is provided, and a laser irradiation apparatus, a laser irradiation method, and a program capable of suppressing the occurrence of unevenness in connection are provided.
　本発明の一実施形態におけるレーザ照射装置は、レーザ光を発生する光源と、ガラス基板上の複数の薄膜トランジスタの各々に被着されたアモルファスシリコン薄膜の所定の領域に、当該レーザ光を照射してアニール化処理を行う投影レンズと、当該投影レンズ上に設けられ、当該複数の薄膜トランジスタの各々に対して当該レーザ光が照射されるように、複数の開口部が設けられた投影マスクパターンと、を備え、当該投影レンズは、当該ガラス基板上の所定の方向に対するアニール化処理が完了した場合、当該所定の方向の直交方向に移動した後、再度、当該所定の方向に対するアニール化処理を行い、当該投影マスクパターンは、当該直交方向において、当該投影マスクパターンの外側の列から内側の列に向けて、当該開口部の数を徐々に増加させることを特徴とする。 In one embodiment of the present invention, a laser irradiation apparatus irradiates a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate with a light source that generates laser light. A projection lens that performs annealing, and a projection mask pattern provided on the projection lens and provided with a plurality of openings so that each of the plurality of thin film transistors is irradiated with the laser light. The projection lens, when the annealing process for the predetermined direction on the glass substrate is completed, after moving in the direction orthogonal to the predetermined direction, the projection lens performs the annealing process for the predetermined direction again, The projection mask pattern has the number of openings in the orthogonal direction from the outer row to the inner row of the projection mask pattern. And characterized by increasing people on.
　本発明の一実施形態におけるレーザ照射装置は、当該投影マスクパターンは、当該直交方向において、当該投影マスクパターンの外側の列から内側の列に向けて、当該開口部の数を徐々に増加させるとともに、当該開口部を互いに隣り合う列においてステップ状に配置することを特徴としてもよい。 In the laser irradiation apparatus according to the embodiment of the present invention, the projection mask pattern gradually increases the number of the opening portions from the outer row to the inner row in the orthogonal direction. The openings may be arranged in steps in rows adjacent to each other.
　本発明の一実施形態におけるレーザ照射装置は、当該投影レンズは、複数のマイクロレンズを含むマイクロレンズアレイであり、当該投影マスクパターンは、当該直交方向において、互いに対応する一組の列を含み、当該互いに対応する一組の列の各々に設けられる当該開口部の合計数は、当該マイクロレンズアレイの一列に含まれる当該複数のマイクロレンズの数であることを特徴としてもよい。 In the laser irradiation apparatus according to an embodiment of the present invention, the projection lens is a microlens array including a plurality of microlenses, and the projection mask pattern includes a set of rows corresponding to each other in the orthogonal direction, The total number of the openings provided in each of the pair of rows corresponding to each other may be the number of the plurality of microlenses included in one row of the microlens array.
　本発明の一実施形態におけるレーザ照射装置は、当該投影マスクパターンは、当該互いに対応する一組の列の各々を、当該投影マスクパターンにおける当該所定の方向の中心線に対して、互いに逆側に配置することを特徴としてもよい。 In the laser irradiation apparatus according to an embodiment of the present invention, the projection mask pattern is configured such that each of the pair of columns corresponding to each other is opposite to the center line in the predetermined direction in the projection mask pattern. It is good also as arranging.
　本発明の一実施形態におけるレーザ照射装置は、当該投影マスクパターンは、当該互いに対応する一組の列の各々を、当該中心線から等しい距離に配置することを特徴としてもよい。 The laser irradiation apparatus according to an embodiment of the present invention may be characterized in that the projection mask pattern is arranged such that each of the set of columns corresponding to each other is arranged at an equal distance from the center line.
　本発明の一実施形態におけるレーザ照射装置は、当該投影レンズは、薄膜トランジスタに含まれるソース電極とドレイン電極との間に被着されたアモルファスシリコン薄膜の所定の領域にレーザ光を照射して、ポリシリコン薄膜を形成することを特徴としてもよい。 In the laser irradiation apparatus according to one embodiment of the present invention, the projection lens irradiates a predetermined region of the amorphous silicon thin film deposited between the source electrode and the drain electrode included in the thin film transistor with a laser beam. A silicon thin film may be formed.
　本発明の一実施形態における薄膜トランジスタの製造方法は、レーザ光を発生する第１のステップと、ガラス基板上の複数の薄膜トランジスタの各々に被着されたアモルファスシリコン薄膜の所定の領域に、複数の開口部を含む投影マスクパターンが設けれた投影レンズを用いて、当該レーザ光を照射してアニール化処理を行う第２のステップと、当該ガラス基板上の当該所定の方向に対するアニール化処理が完了した場合、当該所定の方向の直交方向に移動した後、再度、当該所定の方向に対するアニール化処理を行う第３のステップと、を含み、第２のステップにおいて、当該直交方向において、当該投影マスクパターンの外側の列から内側の列に向けて、当該開口部の数を徐々に増加した当該投影マスクパターンを介して、当該レーザ光を照射することを特徴とする。 A thin film transistor manufacturing method according to an embodiment of the present invention includes a first step of generating laser light, and a plurality of openings in a predetermined region of an amorphous silicon thin film deposited on each of the plurality of thin film transistors on a glass substrate. The second step of performing the annealing process by irradiating the laser beam using the projection lens provided with the projection mask pattern including the portion, and the annealing process for the predetermined direction on the glass substrate are completed. A third step of performing an annealing process on the predetermined direction again after moving in the direction orthogonal to the predetermined direction, and in the second step, the projection mask pattern in the orthogonal direction. Through the projection mask pattern in which the number of openings is gradually increased from the outer row to the inner row. And irradiating with light.
　本発明の一実施形態における薄膜トランジスタの製造方法は、第２のステップにおいて、当該直交方向において、当該投影マスクパターンの外側の列から内側の列に向けて、当該開口部の数を徐々に増加させるとともに、当該開口部を互いに隣り合う列においてステップ状に配置した当該投影マスクパターンを介して、当該レーザ光を照射することを特徴としてもよい。 In the thin film transistor manufacturing method according to an embodiment of the present invention, in the second step, in the orthogonal direction, the number of the openings is gradually increased from the outer row to the inner row in the projection mask pattern. In addition, the laser light may be irradiated through the projection mask pattern in which the openings are arranged in steps in adjacent rows.
　本発明の一実施形態における薄膜トランジスタの製造方法は、当該投影レンズは、複数のマイクロレンズを含むマイクロレンズアレイであり、第２のステップにおいて、当該直交方向において、互いに対応する一組の列を含み、当該互いに対応する一組の列の各々に設けられる当該開口部の合計数は、当該マイクロレンズアレイの一列に含まれる当該複数のマイクロレンズの数である当該投影マスクパターンを介して、当該レーザ光を照射する
ことを特徴としてもよい。 In the thin film transistor manufacturing method according to an embodiment of the present invention, the projection lens is a microlens array including a plurality of microlenses. In the second step, the projection lens includes a set of rows corresponding to each other in the orthogonal direction. The total number of the openings provided in each of the pair of rows corresponding to each other is the laser through the projection mask pattern, which is the number of the plurality of microlenses included in one row of the microlens array. It may be characterized by irradiating light.
　本発明の一実施形態における薄膜トランジスタの製造方法は、第２のステップにおいて、当該互いに対応する一組の列の各々を、当該投影マスクパターンにおける当該所定の方向の中心線に対して、互いに逆側に配置した当該投影マスクパターンを介して、当該レーザ光を照射することを特徴としてもよい。 In the thin film transistor manufacturing method according to an embodiment of the present invention, in the second step, each of the pair of corresponding columns is opposite to the center line in the predetermined direction in the projection mask pattern. The laser light may be irradiated through the projection mask pattern arranged in the above.
　本発明の一実施形態における薄膜トランジスタの製造方法は、第２のステップにおいて、当該互いに対応する一組の列の各々を、当該中心線から等しい距離に配置した当該投影マスクパターンを介して、当該レーザ光を照射することを特徴としてもよい。 The thin film transistor manufacturing method according to an embodiment of the present invention includes, in the second step, the laser through the projection mask pattern in which each of the pair of columns corresponding to each other is arranged at an equal distance from the center line. It may be characterized by irradiating light.
　本発明の一実施形態における薄膜トランジスタの製造方法は、当該第２のステップにおいて、薄膜トランジスタに含まれるソース電極とドレイン電極との間に被着されたアモルファスシリコン薄膜の所定の領域にレーザ光を照射して、ポリシリコン薄膜を形成する
ことを特徴としてもよい。 In the method for manufacturing a thin film transistor in one embodiment of the present invention, in the second step, a predetermined region of the amorphous silicon thin film deposited between the source electrode and the drain electrode included in the thin film transistor is irradiated with laser light. A polysilicon thin film may be formed.
　本発明によれば、基板全体を複数の走査でアニール処理する場合であっても、アニール処理間のつなぎ目（つなぎ領域）が線状になることを低減し、つなぎムラの発生を抑制可能なレーザ照射装置、薄膜トランジスタおよび薄膜トランジスタの製造方法を提供することである。 According to the present invention, even in the case where the entire substrate is annealed by a plurality of scans, it is possible to reduce the occurrence of joint unevenness by reducing the joint (joint region) between the annealing processes from being linear. An irradiation apparatus, a thin film transistor, and a method for manufacturing the thin film transistor are provided.
レーザ照射装置の構成例を示す図である。It is a figure which shows the structural example of a laser irradiation apparatus. 所定の領域がアニール化された薄膜トランジスタの例を示す模式図である。It is a schematic diagram which shows the example of the thin-film transistor by which the predetermined area | region was annealed. レーザ照射装置がレーザ光を照射するガラス基板の例を示す模式図である。It is a schematic diagram which shows the example of the glass substrate which a laser irradiation apparatus irradiates with a laser beam. マイクロレンズアレイの構成例を示す図である。It is a figure which shows the structural example of a micro lens array. 投影マスクパターンの構成例を示す図である。It is a figure which shows the structural example of a projection mask pattern. 投影マスクパターンが配置されたマイクロレンズアレイにより、ガラス基板をアニール処理する様子を説明するための図である。It is a figure for demonstrating a mode that a glass substrate is annealed by the micro lens array by which the projection mask pattern is arrange | positioned. 投影マスクパターンにおける、互いに対応する“列”に関して説明するための図である。It is a figure for demonstrating regarding the "column" corresponding to each other in a projection mask pattern. 従来のレーザ照射装置によるアニール処理と、本発明の第１の実施形態におけるレーザ照射装置によるアニール処理と、を比較するための図である。It is a figure for comparing the annealing process by the conventional laser irradiation apparatus, and the annealing process by the laser irradiation apparatus in the 1st Embodiment of this invention. 本発明の第２の実施形態におけるレーザ照射装置の構成例を示す図である。It is a figure which shows the structural example of the laser irradiation apparatus in the 2nd Embodiment of this invention. 従来のレーザ照射装置によるアニール処理の様子を説明するための図である。It is a figure for demonstrating the mode of the annealing process by the conventional laser irradiation apparatus.
　以下、本発明の実施形態について、添付の図面を参照して具体的に説明する。 Hereinafter, embodiments of the present invention will be specifically described with reference to the accompanying drawings.
　（第１の実施形態）
　図１は、本発明の第１の実施形態におけるレーザ照射装置１０の構成例を示す図である。 (First embodiment)
FIG. 1 is a diagram illustrating a configuration example of a laser irradiation apparatus 10 according to the first embodiment of the present invention.
　本発明の第１の実施形態において、レーザ照射装置１０は、薄膜トランジスタ（ＴＦＴ）２０のような半導体装置の製造工程において、例えば、チャネル領域形成予定領域のみにレーザ光を照射してアニールし、当該チャネル領域形成予定領域を多結晶化するための装置である。 In the first embodiment of the present invention, in the manufacturing process of a semiconductor device such as a thin film transistor (TFT) 20, the laser irradiation apparatus 10 performs annealing by irradiating only a channel region formation scheduled region with laser light, for example. This is an apparatus for polycrystallizing a channel region formation planned region.
　レーザ照射装置１０は、例えば、液晶表示装置の周辺回路などの画素の薄膜トランジスタを形成する際に用いられる。このような薄膜トランジスタを形成する場合、まず、ガラス基板３０上にＡｌ等の金属膜からなるゲート電極を、スパッタによりパターン形成する。そして、低温プラズマＣＶＤ法により、ガラス基板３０上の全面にＳｉＮ膜からなるゲート絶縁膜を形成する。その後、ゲート絶縁膜上に、例えば、プラズマＣＶＤ法によりアモルファスシリコン薄膜２１を形成する。そして、図１に例示するレーザ照射装置１０により、アモルファスシリコン薄膜２１のゲート電極上の所定の領域にレーザ光１４を照射してアニールし、当該所定の領域を多結晶化してポリシリコン化する。 The laser irradiation device 10 is used, for example, when forming a thin film transistor of a pixel such as a peripheral circuit of a liquid crystal display device. When forming such a thin film transistor, first, a gate electrode made of a metal film such as Al is formed on the glass substrate 30 by sputtering. Then, a gate insulating film made of a SiN film is formed on the entire surface of the glass substrate 30 by a low temperature plasma CVD method. Thereafter, an amorphous silicon thin film 21 is formed on the gate insulating film by, for example, plasma CVD. Then, the laser irradiation apparatus 10 illustrated in FIG. 1 irradiates a predetermined region on the gate electrode of the amorphous silicon thin film 21 with the laser beam 14 and anneals to crystallize the predetermined region into polysilicon.
　図１に示すように、レーザ照射装置１０において、レーザ光源１１から出射されたレーザ光は、カップリング光学系１２によりビーム系が拡張され、輝度分布が均一化される。レーザ光源１１は、例えば、波長が３０８ｎｍや２４８ｎｍなどのレーザ光を、所定の繰り返し周期で放射するエキシマレーザである。 As shown in FIG. 1, in the laser irradiation apparatus 10, the beam system of the laser light emitted from the laser light source 11 is expanded by the coupling optical system 12, and the luminance distribution is made uniform. The laser light source 11 is, for example, an excimer laser that emits laser light having a wavelength of 308 nm or 248 nm at a predetermined repetition period.
　その後、レーザ光は、マイクロレンズアレイ１３上に設けられた投影マスクパターン１５（図示しない）の複数の開口（透過領域）により、複数のレーザ光１４に分離され、アモルファスシリコン薄膜２１の所定の領域に照射される。マイクロレンズアレイ１３には、投影マスクパターン１５が設けられ、当該投影マスクパターン１５によって所定の領域にレーザ光１４が照射される。そして、アモルファスシリコン薄膜２１の所定の領域が瞬間加熱されて溶融し、アモルファスシリコン薄膜２１の一部がポリシリコン薄膜２２となる。 Thereafter, the laser beam is separated into a plurality of laser beams 14 by a plurality of openings (transmission regions) of a projection mask pattern 15 (not shown) provided on the microlens array 13, and a predetermined region of the amorphous silicon thin film 21 is obtained. Is irradiated. The microlens array 13 is provided with a projection mask pattern 15, and the projection mask pattern 15 irradiates a predetermined region with laser light 14. A predetermined region of the amorphous silicon thin film 21 is instantaneously heated and melted, and a part of the amorphous silicon thin film 21 becomes the polysilicon thin film 22.
　ポリシリコン薄膜２２は、アモルファスシリコン薄膜２１に比べて電子移動度が高く、薄膜トランジスタ２０において、ソース２３とドレイン２４とを電気的に接続させるチャネル領域に用いられる。なお、図１の例では、マイクロレンズアレイ１３を用いた例を示しているが、必ずしもマイクロレンズアレイ１３を用いる必要はなく、１個の投影レンズを用いてレーザ光１４を照射してもよい。なお、実施形態１では、マイクロレンズアレイ１３を用いて、ポリシリコン薄膜２２を形成する場合を例にして説明する。 The polysilicon thin film 22 has a higher electron mobility than the amorphous silicon thin film 21 and is used in the thin film transistor 20 in a channel region that electrically connects the source 23 and the drain 24. In the example of FIG. 1, an example using the microlens array 13 is shown, but the microlens array 13 is not necessarily used, and the laser light 14 may be irradiated using one projection lens. . In the first embodiment, a case where the polysilicon thin film 22 is formed using the microlens array 13 will be described as an example.
　図２は、所定の領域がアニール化された薄膜トランジスタ２０の例を示す模式図である。なお、薄膜トランジスタ２０は、最初にポリシリコン薄膜２２を形成し、その後、形成されたポリシリコン薄膜２２の両端にソース２３とドレイン２４を形成することで、作成される。 FIG. 2 is a schematic diagram showing an example of the thin film transistor 20 in which a predetermined region is annealed. The thin film transistor 20 is formed by first forming a polysilicon thin film 22 and then forming a source 23 and a drain 24 at both ends of the formed polysilicon thin film 22.
　図２に示すように、薄膜トランジスタは、ソース２３とドレイン２４との間に、ポリシリコン薄膜２２が形成されている。レーザ照射装置１０は、１つの薄膜トランジスタ２０に対して、図２に示したマイクロレンズアレイ１３の一列（または一行）に含まれる例えば２０個のマイクロレンズ１７を用いて、レーザ光１４を照射する。すなわち、レーザ照射装置１０は、ポリシリコン薄膜２２に対して、２０ショットのレーザ光１４を照射する。その結果、薄膜トランジスタ２０において、アモルファスシリコン薄膜２１の所定の領域が瞬間加熱されて溶融し、ポリシリコン薄膜２２となる。 As shown in FIG. 2, in the thin film transistor, a polysilicon thin film 22 is formed between a source 23 and a drain 24. The laser irradiation apparatus 10 irradiates one thin film transistor 20 with laser light 14 using, for example, 20 microlenses 17 included in one column (or one row) of the microlens array 13 illustrated in FIG. That is, the laser irradiation apparatus 10 irradiates the polysilicon thin film 22 with 20 shots of laser light 14. As a result, in the thin film transistor 20, a predetermined region of the amorphous silicon thin film 21 is instantaneously heated and melted to become a polysilicon thin film 22.
　図３は、レーザ照射装置１０がレーザ光１４を照射するガラス基板３０の例を示す模式図である。図３に示すように、ガラス基板３０は、複数の画素３１を含み、当該画素３１の各々に薄膜トランジスタ２０を備える。薄膜トランジスタ２０は、複数に画素３１の各々における光の透過制御を、電気的にＯＮ／ＯＦＦすることにより実行するものである。図３に示すように、ガラス基板３０には、所定の間隔「Ｈ」で、アモルファスシリコン薄膜２１が設けられている。当該アモルファスシリコン薄膜２１の部分は、薄膜トランジスタ２０となる部分である。 FIG. 3 is a schematic diagram showing an example of the glass substrate 30 on which the laser irradiation apparatus 10 irradiates the laser beam 14. As shown in FIG. 3, the glass substrate 30 includes a plurality of pixels 31, and each of the pixels 31 includes a thin film transistor 20. The thin film transistor 20 performs light transmission control in each of a plurality of pixels 31 by electrically turning on and off. As shown in FIG. 3, the amorphous silicon thin film 21 is provided on the glass substrate 30 at a predetermined interval “H”. The portion of the amorphous silicon thin film 21 is a portion that becomes the thin film transistor 20.
　レーザ照射装置１０は、アモルファスシリコン薄膜２１にレーザ光１４を照射する。ここで、レーザ照射装置１０は所定の周期でレーザ光１４を照射し、レーザ光１４が照射されていない時間にガラス基板３０を移動させ、次のアモルファスシリコン薄膜２１の箇所に当該レーザ光１４が照射されるようにする。図３に示すように、ガラス基板３０は、移動方向に対して、所定の間隔「Ｈ」でアモルファスシリコン薄膜２１が配置される。そして、レーザ照射装置１０は、所定の周期で、ガラス基板３０上に配置されたアモルファスシリコン薄膜２１の部分に、レーザ光１４を照射する。 The laser irradiation apparatus 10 irradiates the amorphous silicon thin film 21 with the laser beam 14. Here, the laser irradiation apparatus 10 irradiates the laser beam 14 at a predetermined cycle, moves the glass substrate 30 during a time when the laser beam 14 is not irradiated, and the laser beam 14 is applied to the next amorphous silicon thin film 21. Let it be irradiated. As shown in FIG. 3, the amorphous silicon thin film 21 is arranged on the glass substrate 30 at a predetermined interval “H” with respect to the moving direction. And the laser irradiation apparatus 10 irradiates the part of the amorphous silicon thin film 21 arrange | positioned on the glass substrate 30 with the laser beam 14 with a predetermined period.
　そして、レーザ照射装置１０は、マイクロレンズアレイ１３を用いて、ガラス基板上の複数のアモルファスシリコン薄膜２１に対して、同一のレーザ光１４を照射する。レーザ照射装置１０は、例えば、図３に示す領域Ａに含まれる複数のアモルファスシリコン薄膜２１に対して、同一のレーザ光１４を照射する。また、レーザ照射装置１０は、図３に示す領域Ｂに含まれる複数のアモルファスシリコン薄膜２１に対しても、同一のレーザ光１４を照射する。 And the laser irradiation apparatus 10 irradiates the same laser beam 14 to the plurality of amorphous silicon thin films 21 on the glass substrate using the microlens array 13. The laser irradiation apparatus 10 irradiates, for example, the same laser light 14 to a plurality of amorphous silicon thin films 21 included in the region A shown in FIG. Moreover, the laser irradiation apparatus 10 irradiates the same laser beam 14 also to the plurality of amorphous silicon thin films 21 included in the region B shown in FIG.
　図４は、アニール化に用いるマイクロレンズアレイ１３の構成例を示す図である。図２に示すように、マイクロレンズアレイ１３において、スキャン方向の１列（又は１行）には、２０個のマイクロレンズ１７が配置される。レーザ照射装置１は、１つの薄膜トランジスタ２０に対して、マイクロレンズアレイ１３の１列（又は１行）に含まれる２０個のマイクロレンズ１７の少なくとも一部を用いて、レーザ光１４を照射する。なお、なお、マイクロレンズアレイ１３に含まれる一列（又は一行）のマイクロレンズ１７の数は、２０個に限られず、いくつであってもよい。 FIG. 4 is a diagram showing a configuration example of the microlens array 13 used for annealing. As shown in FIG. 2, in the microlens array 13, 20 microlenses 17 are arranged in one column (or one row) in the scanning direction. The laser irradiation apparatus 1 irradiates one thin film transistor 20 with the laser beam 14 by using at least a part of the 20 microlenses 17 included in one column (or one row) of the microlens array 13. Note that the number of microlenses 17 in one row (or one row) included in the microlens array 13 is not limited to 20 and may be any number.
　図４に示すように、マイクロレンズアレイ１３は、スキャン方向の一列（または一行）にマイクロレンズ１７を２０個含むが、スキャン方向に直交する方向（直交方向）の一行（または一列）には例えば８３個含む。なお、８３個は例示であって、いくつであってもよいことは言うまでもない。 As shown in FIG. 4, the microlens array 13 includes 20 microlenses 17 in one column (or one row) in the scanning direction, but in one row (or one column) in the direction (orthogonal direction) orthogonal to the scanning direction, for example, Contains 83. It is needless to say that 83 is an example, and any number is possible.
　ここで、マイクロレンズアレイのスキャン方向の直交方向の一行（または一列）に含むことが可能なマイクロレンズ１７の数は、レーザ照射装置１０によるレーザ光１４の出力に依存する。そのため、レーザ照射装置１０は、ガラス基板全体に対してレーザアニール処理を行うためには、スキャン方向にスキャンした後、スキャン方向の直交方向に１ステップ分（マイクロレンズアレイの長辺分）移動し、再度スキャン方向にスキャンすることを繰り返す必要がある。そのため、１回のスキャンでアニール処理された領域と、次のスキャンでアニール処理された領域との間に“線状”のつなぎ目（つなぎ領域）が存在することになる。このように、“線状”のつなぎ目（つなぎ領域）が現れる態様でレーザ光１４を照射してしまうと、このつなぎ目（つなぎ領域）が液晶画面上で“つなぎムラ”として認識されてしまう。 Here, the number of microlenses 17 that can be included in one row (or one column) in the direction orthogonal to the scanning direction of the microlens array depends on the output of the laser light 14 from the laser irradiation device 10. Therefore, in order to perform laser annealing on the entire glass substrate, the laser irradiation apparatus 10 scans in the scanning direction and then moves by one step (long side of the microlens array) in the direction orthogonal to the scanning direction. It is necessary to repeat scanning in the scanning direction again. Therefore, a “linear” joint (a joint region) exists between the region annealed in one scan and the region annealed in the next scan. In this way, if the laser beam 14 is irradiated in such a manner that “linear” joints (joint areas) appear, the joints (joint areas) are recognized as “joint unevenness” on the liquid crystal screen.
　そこで、本発明の第１の実施形態では、１回のスキャンでアニール処理された領域と、次のスキャンでアニール処理された領域と、の間に“線状”のつなぎ目（つなぎ領域）ができないようにアニール処理を行うことで、“つなぎムラ”の発生を低減する。 Therefore, in the first embodiment of the present invention, there is no “linear” joint (joint region) between the region annealed in one scan and the region annealed in the next scan. By performing the annealing process in this way, the occurrence of “unevenness of connection” is reduced.
　そのために、本発明の第１の実施形態では、マイクロレンズアレイ１３上に設けられる投影マスクパターン１５の開口部の配置を、外側から内側に向けて階段状（ステップ状）となるように配置する。 Therefore, in the first embodiment of the present invention, the openings of the projection mask pattern 15 provided on the microlens array 13 are arranged so as to be stepped (stepped) from the outside to the inside. .
　図５は、本発明の第１の実施形態における、投影マスクパターン１５の構成例を示す図である。図５に示すように、投影マスクパターン１５は、開口部を有するマスク１５０（開口部を有する領域）と、開口部を有しないマスク１５１（開口部を有しない領域）とを含む。例えば、図５の列１には、開口部を有するマスク１５０が１つ含まれる。 FIG. 5 is a diagram showing a configuration example of the projection mask pattern 15 in the first embodiment of the present invention. As shown in FIG. 5, the projection mask pattern 15 includes a mask 150 having an opening (region having an opening) and a mask 151 having no opening (region having no opening). For example, column 1 in FIG. 5 includes one mask 150 having an opening.
　図５に示すように、投影マスクパターン１５は、開口部を有するマスク１５０を、スキャン方向に平行な一辺から内側に向けて、階段状（ステップ状）に配置する。例えば、投影マスクパターン１５は、辺Ａに最も近い列１において、開口部を有するマスク１５０を１つ配置する。具体的には、投影マスクパターン１５は、「列１、行１」の位置に開口部を有するマスク１５０を備える。また、該投影マスクパターン１５において、列１の隣の列２は、開口部を有するマスク１５０を３つ配置する。具体手には、投影マスクパターン１５は、列２において、行１乃至行３の各々に、開口部を有するマスク１５０を備える。さらに、該投影マスクパターン１５において、列２の隣の列３は、開口部を有するマスク１５０を５つ配置する。具体的には、投影マスクパターン１５０は、列３において、行１乃至行５の各々に、開口部を有するマスク１５０を備える。このように、開口部は、互いに隣り合う列において、階段状（ステップ状）となるように配置される。なお、各列に配置される開口部の数はいくつであってもよく、列１に１個、列２に３個、列３に５個・・・のように限定されるわけではない。 As shown in FIG. 5, in the projection mask pattern 15, a mask 150 having an opening is arranged stepwise from one side parallel to the scanning direction to the inside. For example, in the projection mask pattern 15, one mask 150 having an opening is arranged in the column 1 closest to the side A. Specifically, the projection mask pattern 15 includes a mask 150 having an opening at the position of “column 1, row 1”. In the projection mask pattern 15, three masks 150 having openings are arranged in the column 2 adjacent to the column 1. Specifically, the projection mask pattern 15 includes a mask 150 having an opening in each of the rows 1 to 3 in the column 2. Further, in the projection mask pattern 15, five masks 150 having openings are arranged in the column 3 adjacent to the column 2. Specifically, the projection mask pattern 150 includes a mask 150 having an opening in each of the rows 1 to 5 in the column 3. In this way, the openings are arranged in a staircase pattern (step shape) in rows adjacent to each other. Note that the number of openings arranged in each row may be any number, and is not limited to one for row 1, three for row 2, five for row 3, and so on.
　また、投影マスクパターン１５上で、辺Ａに向い合う辺Ｂに最も高い列Ｚにおいて、開口部を有するマスク１５０を１つ配置する。列Ｚにおいて開口部を有するマスク１５０は、投影マスクパターン１５上で、列１において開口部を有するマスク１５０の対角となる位置に配置する。具体的には、投影マスクパターン１５は、「列Ｚ、行２０」の位置、すなわち「列１、行１」の対角となる位置に開口部を有するマスク１５０を備える。また、投影マスクパターン１５において、列Ｚの隣の列Ｙは、開口部を有するマスク１５０を３つ配置する。列Ｙにおいて開口部を有するマスク１５０は、投影マスクパターン１５上で、列２において開口部を有するマスク１５０の対角となる位置に配置する。さらに、該投影マスクパターン１５において、列Ｙの隣の列Ｘは、開口部を有するマスク１５０を５つ含む。辺Ｂ側においても、開口部を有するマスク１５０は、互いに隣り合う列において、階段状（ステップ状）となるように配置される。なお、各列に配置される開口部を有するマスクの数はいくつであってもよく、列Ｚに１個、列Ｙに３個、列Ｚに５個・・・のように限定されるわけではない。 Further, on the projection mask pattern 15, one mask 150 having an opening is arranged in the highest row Z on the side B facing the side A. The mask 150 having openings in the row Z is disposed on the projection mask pattern 15 at a position that is diagonal to the mask 150 having openings in the row 1. Specifically, the projection mask pattern 15 includes a mask 150 having an opening at the position of “column Z, row 20”, that is, the diagonal position of “column 1, row 1”. In the projection mask pattern 15, three masks 150 having openings are arranged in the column Y adjacent to the column Z. The mask 150 having openings in the column Y is arranged on the projection mask pattern 15 at a position that is diagonal to the mask 150 having openings in the column 2. Further, in the projection mask pattern 15, the column X adjacent to the column Y includes five masks 150 having openings. Also on the side B side, the masks 150 having openings are arranged so as to be stepped (stepped) in rows adjacent to each other. Note that the number of masks having openings arranged in each column may be any number, and is limited to one in column Z, three in column Y, five in column Z, and so on. is not.
　ここで、投影マスクパターン１５において列１は開口部を有するマスク１５０が１個しかないため、ガラス基板３０において列１でスキャンされた領域は、レーザ光が１回しか照射されないことになる。そこで、ガラス基板３０において、列１でスキャンされた領域が、次のスキャンの際には列Ｐ（開口部が１９個）に対応する領域でスキャンされるように、該ガラス基板３０をＹ方向に移動させる。 Here, since the column 1 in the projection mask pattern 15 has only one mask 150 having an opening, the region scanned in the column 1 on the glass substrate 30 is irradiated only once with the laser beam. Therefore, in the glass substrate 30, the glass substrate 30 is moved in the Y direction so that the region scanned in the row 1 is scanned in the region corresponding to the row P (19 openings) in the next scan. Move to.
　すなわち、投影マスクパターン１５において、列１（開口部１個）と列Ｑ（開口部１９個）とが対応しており、ガラス基板３０において、列１でスキャンされた領域は、ガラス基板が移動した後、列Ｑでスキャンされる。これにより、ガラス基板３０には、合計で２０回のレーザ光１４が照射されるようになる。同様に、投影マスクパターン１５において、列２（開口部３個）は列Ｒ（開口部１７個）に、列３（開口部５個）は列Ｓ（開口部１５個）にそれぞれ対応し、ガラス基板３０は、対応する列の両方でアニール処理がなされる。このように、互いに対応する列によってスキャンすることによって、ガラス基板３０の全体が、合計２０回のレーザ照射により、アニール処理される。 That is, in projection mask pattern 15, column 1 (one opening) corresponds to column Q (19 openings), and the glass substrate moves in the region scanned in column 1 on glass substrate 30. And then scanned in column Q. As a result, the glass substrate 30 is irradiated with the laser light 14 a total of 20 times. Similarly, in the projection mask pattern 15, row 2 (3 openings) corresponds to row R (17 openings), row 3 (5 openings) corresponds to row S (15 openings), and The glass substrate 30 is annealed in both corresponding rows. In this way, the entire glass substrate 30 is annealed by a total of 20 times of laser irradiation by scanning with the columns corresponding to each other.
　図６は、図５に例示する投影マスクパターン１５が配置されたマイクロレンズアレイ１３により、ガラス基板３０をアニール処理する様子を説明するための図である。図６に示すように、レーザ照射装置１０がＸ方向にスキャンした後、ガラス基板３０がＹ方向に１ステップ移動し、レーザ照射装置１０が再度Ｘ方向にスキャンを行う。 FIG. 6 is a diagram for explaining the manner in which the glass substrate 30 is annealed by the microlens array 13 in which the projection mask pattern 15 illustrated in FIG. 5 is arranged. As shown in FIG. 6, after the laser irradiation apparatus 10 scans in the X direction, the glass substrate 30 moves one step in the Y direction, and the laser irradiation apparatus 10 scans in the X direction again.
　ここで、ガラス基板３０のＹ方向への移動は、投影マスクパターン１５において、互いに対応する列の双方でスキャン可能な距離だけ行う。上述したように、図５の例では、投影マスクパターン１５の“列１”でスキャンされた領域が、次のＸ方向へのスキャンにおいて“列Ｑ”でスキャンされるように、ガラス基板３０を移動する。 Here, the movement of the glass substrate 30 in the Y direction is performed by a distance that can be scanned in both rows corresponding to each other in the projection mask pattern 15. As described above, in the example of FIG. 5, the glass substrate 30 is placed so that the region scanned in “column 1” of the projection mask pattern 15 is scanned in “column Q” in the next scan in the X direction. Moving.
　なお、レーザ照射装置１０の照射ヘッド（すなわち、レーザ光源１１、カップリング光学系１２、マイクロレンズアレイ１３及び投影マスク１５０）が、ガラス基板３０に対して移動してもよい。 Note that the irradiation head (that is, the laser light source 11, the coupling optical system 12, the microlens array 13, and the projection mask 150) of the laser irradiation apparatus 10 may move with respect to the glass substrate 30.
　このように、投影マスクパターン１５において、互いに対応する列に含まれる“開口部を含む投影マスクパターン”の数は、合計２０個となる。言い換えると、投影マスクパターン１５は、互いに対応する列に含まれる“開口部を含む投影マスク１５０”の数が合計２０個となるように、開口部を含む投影マスク１５０を配置する。 Thus, in the projection mask pattern 15, the total number of “projection mask patterns including openings” included in the columns corresponding to each other is 20. In other words, in the projection mask pattern 15, the projection masks 150 including the openings are arranged so that the total number of “projection masks 150 including the openings” included in the columns corresponding to each other is 20.
　なお、ガラス基板３０が移動する距離は、マイクロレンズアレイ１３の大きさや、該マイクロレンズアレイ１３に含まれるマイクロレンズ１７の数に依存するが、予め設定可能である。 The distance that the glass substrate 30 moves depends on the size of the microlens array 13 and the number of microlenses 17 included in the microlens array 13, but can be set in advance.
　図７は、図６における投影マスクパターン１５における、互いに対応する“列”に関して説明するための図である。図７に示すように、投影マスクパターン１５において、例えば、列１（開口部１個）と、列Ｑ（開口部１９個）とが互いに対応する。また、同様にして、投影マスクパターン１５において、例えば、列５（開口部３個）と列Ｕ（開口部１５個）とが互いに対応し、列１０（開口部１９個）と列Ｚ（開口部１個）とが互いに対応する。このように、互いに対応する列に含まれる開口部の数は、合計２０個となる。そして、ガラス基板３０は、互いに対応する列によってレーザ光１４が照射されるように、スキャン方向（Ｘ方向）に直交する方向（Ｙ方向）に移動する。そのため、この投影マスクパターン１５を用いたマイクロレンズアレイ１３を用いてレーザ光１４を照射すると、ガラス基板３０の全体において、薄膜トランジスタ２０は、２０回のレーザ光１４の照射を受けることになる。 FIG. 7 is a diagram for explaining “columns” corresponding to each other in the projection mask pattern 15 in FIG. 6. As shown in FIG. 7, in the projection mask pattern 15, for example, column 1 (one opening) and column Q (19 openings) correspond to each other. Similarly, in the projection mask pattern 15, for example, row 5 (3 openings) and row U (15 openings) correspond to each other, and row 10 (19 openings) and row Z (openings). 1 part) correspond to each other. Thus, the number of openings included in the mutually corresponding rows is 20 in total. Then, the glass substrate 30 moves in a direction (Y direction) orthogonal to the scanning direction (X direction) so that the laser light 14 is irradiated by rows corresponding to each other. For this reason, when the laser light 14 is irradiated using the microlens array 13 using the projection mask pattern 15, the thin film transistor 20 is irradiated with the laser light 14 20 times over the entire glass substrate 30.
　図８は、従来のレーザ照射装置１０によるアニール処理と、本発明の第１の実施形態におけるレーザ照射装置によるアニール処理と、を比較するための図である。 FIG. 8 is a diagram for comparing the annealing process by the conventional laser irradiation apparatus 10 and the annealing process by the laser irradiation apparatus in the first embodiment of the present invention.
　図８（ａ）に示すように、従来のレーザ照射装置（例えば、特許文献１に記載のレーザ照射装置）では、第ｎ回目のＸ方向のスキャン領域と、第ｎ＋１回目のＸ方向のスキャン領域とは完全に分離しているため、その境界は明確である。すなわち、従来のレーザ照射装置では、ガラス基板３０において、異なるスキャンによってなされたアニール化処理間のつなぎ目が存在する。そして、当該つなぎ目は、“つなぎムラ”として認識されてしまう。 As shown in FIG. 8A, in the conventional laser irradiation apparatus (for example, the laser irradiation apparatus described in Patent Document 1), the nth X-direction scan area and the (n + 1) th X-direction scan area. Is completely separated, so the boundary is clear. That is, in the conventional laser irradiation apparatus, there is a joint between the annealing processes performed by different scans in the glass substrate 30. The joint is recognized as “joint unevenness”.
　一方、図８（ｂ）に示すように、本発明の第１の実施形態におけるレーザ照射装置１０によるアニール化処理では、第ｎ回目のＸ方向のスキャンの領域から、突然、第ｎ＋１回目のＸ方向のスキャンの領域に変わるのではなく、互いのスキャンの領域が重なり合う領域が存在する。そして、その重なり合う領域においては、異なるスキャンによってアニール化処理された領域の割合が、ステップ状（階段状）に徐々に変化する。そのため、図８（ａ）のような従来のレーザ照射装置の場合とは異なり、異なるスキャンによってなされたアニール化処理間のつなぎ目が存在しなくなる。つなぎ目がないため、“つなぎムラ”も発生せず、本発明の第１の実施形態におけるレーザ照射装置１０によってアニール化処理することにより、高品質な液晶画面等を提供することができる。 On the other hand, as shown in FIG. 8B, in the annealing process by the laser irradiation apparatus 10 in the first embodiment of the present invention, the (n + 1) th X-direction is suddenly detected from the n-th X-direction scan region. Instead of changing to the scan area in the direction, there is an area where the scan areas overlap each other. In the overlapping region, the ratio of the regions annealed by different scans gradually changes in a step shape (step shape). Therefore, unlike the case of the conventional laser irradiation apparatus as shown in FIG. 8A, there is no connection between the annealing processes performed by different scans. Since there are no joints, “joint unevenness” does not occur, and a high-quality liquid crystal screen or the like can be provided by performing the annealing treatment with the laser irradiation apparatus 10 in the first embodiment of the present invention.
　（アニール化処理の工程について）
　本発明の第１の実施形態において、レーザ照射装置１０は、ガラス基板３０に対して、図５に示す投影マスクパターンが設けられたマイクロレンズアレイ１３を用いて、レーザ光１４を照射する。 (About annealing process)
In the first embodiment of the present invention, the laser irradiation apparatus 10 irradiates the glass substrate 30 with the laser light 14 using the microlens array 13 provided with the projection mask pattern shown in FIG.
　ガラス基板３０は、マイクロレンズアレイ１３を用いてレーザ光１４が照射されるごとに、所定の距離だけ移動する（スキャンする）。所定の距離は、図３に例示するように、ガラス基板３０における複数の薄膜トランジスタ２０間の距離「Ｈ」である。レーザ照射装置１０は、ガラス基板３０を当該所定の距離移動させる間、レーザ光１４の照射を停止する。 The glass substrate 30 moves (scans) a predetermined distance each time the laser light 14 is irradiated using the microlens array 13. As illustrated in FIG. 3, the predetermined distance is a distance “H” between the plurality of thin film transistors 20 on the glass substrate 30. The laser irradiation apparatus 10 stops the irradiation of the laser beam 14 while moving the glass substrate 30 by the predetermined distance.
　ガラス基板３０が所定の距離「Ｈ」移動した後、レーザ照射装置１０は、マイクロレンズアレイ１３を用いて、レーザ光１４を照射する。レーザ照射装置１０は、マイクロレンズアレイ１３を用いたレーザ光１４の照射と、ガラス基板３０の移動とを繰り返して、ガラス基板３０の縦方向（スキャンする方向。すなわち、所定の距離だけ移動する方向）に対して、アニール化処理を行う。 After the glass substrate 30 has moved a predetermined distance “H”, the laser irradiation apparatus 10 irradiates the laser beam 14 using the microlens array 13. The laser irradiation apparatus 10 repeats the irradiation of the laser beam 14 using the microlens array 13 and the movement of the glass substrate 30, and then the vertical direction of the glass substrate 30 (scanning direction. That is, the direction of movement by a predetermined distance). ) Is annealed.
　その後、ガラス基板３０は、スキャン方向に直交する方向に、１ステップ分（マイクロレンズアレイの長辺分）移動する。レーザ照射装置１０は、ガラス基板３０を当該１ステップ分移動させる間、レーザ光１４の照射を停止する。 Thereafter, the glass substrate 30 moves one step (long side of the microlens array) in a direction orthogonal to the scanning direction. The laser irradiation apparatus 10 stops the irradiation of the laser light 14 while moving the glass substrate 30 by one step.
　ガラス基板３０が１ステップ分移動した後、レーザ照射装置１０は、マイクロレンズアレイ１３を用いてレーザ光１４を照射し、当該ガラス基板３０の縦方向にアニール化処理を行う。 After the glass substrate 30 has moved by one step, the laser irradiation apparatus 10 irradiates the laser beam 14 using the microlens array 13 and performs an annealing process in the vertical direction of the glass substrate 30.
　そして、ガラス基板３０に含まれる薄膜トランジスタ２０の全部に、レーザアニールを用いてポリシリコン薄膜２２を形成した後、別の工程において、当該薄膜トランジスタ２０に、ソース２３とドレイン２４とが形成される。 Then, after forming the polysilicon thin film 22 on all the thin film transistors 20 included in the glass substrate 30 by using laser annealing, a source 23 and a drain 24 are formed in the thin film transistors 20 in another process.
　このように、本発明の第１の実施形態では、本発明の第１の実施形態におけるレーザ照射装置１０によるアニール化処理では、異なるスキャンによってなされたアニール化処理間のつなぎ目が存在しなくなる。つなぎ目がないため、“つなぎムラ”も発生せず、本発明の第１の実施形態におけるレーザ照射装置１０によってアニール化処理することにより、高品質な液晶画面等を提供することができる。 Thus, in the first embodiment of the present invention, in the annealing process by the laser irradiation apparatus 10 in the first embodiment of the present invention, there is no connection between the annealing processes performed by different scans. Since there are no joints, “joint unevenness” does not occur, and a high-quality liquid crystal screen or the like can be provided by performing the annealing treatment with the laser irradiation apparatus 10 in the first embodiment of the present invention.
　（第２の実施形態）
　本発明の第２の実施形態は、マイクロレンズアレイ１３の代わりに、１個の投影レンズ１８を用いて、レーザアニールを行う場合の実施形態である。 (Second Embodiment)
The second embodiment of the present invention is an embodiment in which laser annealing is performed using one projection lens 18 instead of the microlens array 13.
　図９は、本発明の第２の実施形態におけるレーザ照射装置１０の構成例を示す図である。図９に示すように、本発明の第２の実施形態におけるレーザ照射装置１０は、レーザ光源１１と、カップリング光学系１２と、投影マスクパターン１５と、投影レンズ１８とを含む。なお、レーザ光源１１と、カップリング光学系１２とは、図１に示す本発明の第１の実施形態におけるレーザ光源１１と、カップリング光学系１２と同様の構成であるため、詳細な説明は省略される。また、投影マスクパターンは、本発明の第１の実施形態における投影マスクパターンと同様の構成であるため、詳細な説明は省略される。 FIG. 9 is a diagram illustrating a configuration example of the laser irradiation apparatus 10 according to the second embodiment of the present invention. As shown in FIG. 9, the laser irradiation apparatus 10 according to the second embodiment of the present invention includes a laser light source 11, a coupling optical system 12, a projection mask pattern 15, and a projection lens 18. The laser light source 11 and the coupling optical system 12 have the same configuration as the laser light source 11 and the coupling optical system 12 in the first embodiment of the present invention shown in FIG. Omitted. Further, since the projection mask pattern has the same configuration as the projection mask pattern in the first embodiment of the present invention, detailed description is omitted.
　レーザ光は、図５に示すような投影マスクパターン１５の開口（透過領域）を透過し、投影レンズ１８により、アモルファスシリコン薄膜２１の所定の領域に照射される。その結果、アモルファスシリコン薄膜２１の所定の領域が瞬間加熱されて溶融し、アモルファスシリコン薄膜２１の一部がポリシリコン薄膜２２となる。 The laser light is transmitted through the opening (transmission region) of the projection mask pattern 15 as shown in FIG. 5, and is irradiated to a predetermined region of the amorphous silicon thin film 21 by the projection lens 18. As a result, a predetermined region of the amorphous silicon thin film 21 is instantaneously heated and melted, and a part of the amorphous silicon thin film 21 becomes the polysilicon thin film 22.
　本発明の第２の実施形態においても、レーザ照射装置１０は所定の周期でレーザ光１４を照射し、レーザ光１４が照射されていない時間にガラス基板３０を移動させ、次のアモルファスシリコン薄膜２１の箇所に当該レーザ光１４が照射されるようにする。第２の実施形態においても、図３に示すように、ガラス基板３０は、移動方向に対して、所定の間隔「Ｈ」でアモルファスシリコン薄膜２１が配置される。そして、レーザ照射装置１０は、所定の周期で、ガラス基板３０上に配置されたアモルファスシリコン薄膜２１の部分に、レーザ光１４を照射する。 Also in the second embodiment of the present invention, the laser irradiation apparatus 10 irradiates the laser beam 14 at a predetermined cycle, moves the glass substrate 30 during the time when the laser beam 14 is not irradiated, and the next amorphous silicon thin film 21. The laser beam 14 is irradiated to the point. Also in the second embodiment, as shown in FIG. 3, the amorphous silicon thin film 21 is arranged on the glass substrate 30 at a predetermined interval “H” in the moving direction. And the laser irradiation apparatus 10 irradiates the part of the amorphous silicon thin film 21 arrange | positioned on the glass substrate 30 with the laser beam 14 with a predetermined period.
　ここで、投影レンズ１８を用いる場合、レーザ光１４が、当該投影レンズ１８の光学系の倍率で換算される。すなわち、投影マスクパターン１５のパターンが、投影レンズ１８の光学系の倍率で換算され、ガラス基板３０上の所定の領域がレーザアニールされる。 Here, when the projection lens 18 is used, the laser beam 14 is converted by the magnification of the optical system of the projection lens 18. That is, the pattern of the projection mask pattern 15 is converted by the magnification of the optical system of the projection lens 18, and a predetermined region on the glass substrate 30 is laser annealed.
　すなわち、投影マスクパターン１５のマスクパターンは、投影レンズ１８の光学系の倍率で換算され、ガラス基板３０上の所定の領域がレーザアニールされる。例えば、投影レンズ１８の光学系の倍率が約２倍であると、投影マスクパターン１５のマスクパターンは、約１／２（０．５）倍され、ガラス基板３０の所定の領域がレーザアニールされる。なお、投影レンズ１８の光学系の倍率は、約２倍に限られず、どのような倍率であってもよい。投影マスクパターン１５のマスクパターンは、投影レンズ１８の光学系の倍率に応じて、ガラス基板３０上の所定の領域がレーザアニールされる。例えば、投影レンズ１８の光学系の倍率が４倍であれば、投影マスクパターン１５のマスクパターンは、約１／４（０．２５）倍され、ガラス基板３０の所定の領域がレーザアニールされる。 That is, the mask pattern of the projection mask pattern 15 is converted by the magnification of the optical system of the projection lens 18, and a predetermined region on the glass substrate 30 is laser-annealed. For example, if the magnification of the optical system of the projection lens 18 is about 2 times, the mask pattern of the projection mask pattern 15 is about 1/2 (0.5) times, and a predetermined region of the glass substrate 30 is laser-annealed. The Note that the magnification of the optical system of the projection lens 18 is not limited to about twice, and may be any magnification. In the mask pattern of the projection mask pattern 15, a predetermined region on the glass substrate 30 is laser-annealed according to the magnification of the optical system of the projection lens 18. For example, if the magnification of the optical system of the projection lens 18 is 4, the mask pattern of the projection mask pattern 15 is multiplied by about 1/4 (0.25), and a predetermined region of the glass substrate 30 is laser annealed. .
　また、投影レンズ１８が倒立像を形成する場合、ガラス基板３０に照射される投影マスクパターン１５の縮小像は、投影レンズ１８のレンズの光軸を中心に１８０度回転したパターンとなる。一方、投影レンズ１８が正立像を形成する場合、ガラス基板３０に照射される投影マスクパターン１５の縮小像は、当該投影マスクパターン１５そのままとなる。図９の例では、正立像を形成する投影レンズ１８を用いているため、投影マスクパターン１５のパターンが、ガラス基板３０上にそのまま縮小されている。 Further, when the projection lens 18 forms an inverted image, the reduced image of the projection mask pattern 15 irradiated on the glass substrate 30 is a pattern rotated 180 degrees around the optical axis of the lens of the projection lens 18. On the other hand, when the projection lens 18 forms an erect image, the reduced image of the projection mask pattern 15 irradiated on the glass substrate 30 is the projection mask pattern 15 as it is. In the example of FIG. 9, since the projection lens 18 that forms an erect image is used, the pattern of the projection mask pattern 15 is reduced on the glass substrate 30 as it is.
　上記のとおり、本発明の第２の実施形態では、１個の投影レンズ１８を用いてレーザアニールを行う場合であっても、マイクロレンズアレイ１３を用いる第１の実施形態と同様に、異なるスキャンによってなされたアニール化処理間のつなぎ目が存在しなくなる。つなぎ目がないため、“つなぎムラ”も発生せず、本発明の第２の実施形態におけるレーザ照射装置１０によってアニール化処理することにより、高品質な液晶画面等を提供することができる。 As described above, in the second embodiment of the present invention, even when laser annealing is performed using one projection lens 18, a different scan is performed as in the first embodiment using the microlens array 13. There will be no seam between the annealing treatments made by. Since there are no joints, “joint unevenness” does not occur, and a high-quality liquid crystal screen or the like can be provided by performing the annealing treatment with the laser irradiation apparatus 10 in the second embodiment of the present invention.
　なお、以上の説明において、「垂直」「平行」「平面」「直交」等の記載がある場合に、これらの各記載は厳密な意味ではない。すなわち、「垂直」「平行」「平面」「直交」とは、設計上や製造上等における公差や誤差が許容され、「実質的に垂直」「実質的に平行」「実質的に平面」「実質的に直交」という意味である。なお、ここでの公差や誤差とは、本発明の構成・作用・効果を逸脱しない範囲における単位のことを意味するものである。 In the above description, when there are descriptions such as “vertical”, “parallel”, “plane”, and “orthogonal”, these descriptions are not strict meanings. In other words, “vertical”, “parallel”, “plane”, and “orthogonal” allow tolerances and errors in design, manufacturing, etc., and are “substantially vertical”, “substantially parallel”, “substantially plane”, “ It means “substantially orthogonal”. Here, the tolerance and error mean units in a range not departing from the configuration, operation, and effect of the present invention.
　また、以上の説明において、外観上の寸法や大きさが「同一」「等しい」「異なる」等の記載がある場合に、これらの各記載は厳密な意味ではない。すなわち、「同一」「等しい」「異なる」とは、設計上や製造上等における公差や誤差が許容され、「実質的に同一」「実質的に等しい」「実質的に異なる」という意味である。なお、ここでの公差や誤差とは、本発明の構成・作用・効果を逸脱しない範囲における単位のことを意味するものである。 Further, in the above description, when there are descriptions such as “same”, “equal”, “different”, etc., in terms of external dimensions and sizes, each of these descriptions is not a strict meaning. That is, “same”, “equal”, “different” means that tolerances and errors in design, manufacturing, etc. are allowed, and “substantially the same”, “substantially equal”, “substantially different”. . Here, the tolerance and error mean units in a range not departing from the configuration, operation, and effect of the present invention.
　本発明を諸図面や実施形態に基づき説明してきたが、当業者であれば本開示に基づき種々の変形や修正を行うことが容易であることに注意されたい。従って、これらの変形や修正は本発明の範囲に含まれることに留意されたい。例えば、各手段、各ステップ等に含まれる機能等は論理的に矛盾しないように再配置可能であり、複数の手段やステップ等を１つに組み合わせたり、或いは分割したりすることが可能である。また、上記実施の形態に示す構成を適宜組み合わせることとしてもよい。 Although the present invention has been described based on the drawings and embodiments, it should be noted that those skilled in the art can easily make various modifications and corrections based on the present disclosure. Therefore, it should be noted that these variations and modifications are included in the scope of the present invention. For example, the functions included in each means, each step, etc. can be rearranged so that there is no logical contradiction, and a plurality of means, steps, etc. can be combined or divided into one. . The structures described in the above embodiments may be combined as appropriate.
　１０　レーザ照射装置
　１１　レーザ光源
　１２　カップリング光学系
　１３　マイクロレンズアレイ
　１４　レーザ光
　１５　投影マスクパターン
　　１５０　開口部を有するマスク
　　１５１　開口部を有しないマスク
　１６　透過領域
　１７　マイクロレンズ
　１８　投影レンズ
　２０　薄膜トランジスタ
　２１　アモルファスシリコン薄膜
　２２　ポリシリコン薄膜
　２３　ソース
　２４　ドレイン
　３０　ガラス基板 DESCRIPTION OF SYMBOLS 10 Laser irradiation apparatus 11 Laser light source 12 Coupling optical system 13 Micro lens array 14 Laser light 15 Projection mask pattern 150 Mask with opening 151 Mask without opening 16 Transmission region 17 Micro lens 18 Projection lens 20 Thin film transistor 21 Amorphous silicon Thin film 22 Polysilicon thin film 23 Source 24 Drain 30 Glass substrate

Claims (12)

  1. 　レーザ光を発生する光源と、
    　ガラス基板上の複数の薄膜トランジスタの各々に被着されたアモルファスシリコン薄膜の所定の領域に、前記レーザ光を照射してアニール化処理を行う投影レンズと、
    　前記投影レンズ上に設けられ、前記複数の薄膜トランジスタの各々に対して前記レーザ光が照射されるように、複数の開口部が設けられた投影マスクパターンと、を備え、
    　前記投影レンズは、前記ガラス基板上の所定の方向に対するアニール化処理が完了した場合、当該所定の方向の直交方向に移動した後、再度、当該所定の方向に対するアニール化処理を行い、
    　前記投影マスクパターンは、前記直交方向において、当該投影マスクパターンの外側の列から内側の列に向けて、前記開口部の数を徐々に増加させる
    　ことを特徴とするレーザ照射装置。     A light source that generates laser light;
    A projection lens that performs annealing treatment by irradiating a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate with the laser beam;
    A projection mask pattern provided on the projection lens and provided with a plurality of openings so that each of the plurality of thin film transistors is irradiated with the laser beam,
    When the annealing process for the predetermined direction on the glass substrate is completed, the projection lens moves in the direction orthogonal to the predetermined direction, and then performs the annealing process for the predetermined direction again.
    In the orthogonal direction, the projection mask pattern gradually increases the number of the openings from the outer row to the inner row of the projection mask pattern.
  2. 　前記投影マスクパターンは、前記直交方向において、当該投影マスクパターンの外側の列から内側の列に向けて、前記開口部の数を徐々に増加させるとともに、当該開口部を互いに隣り合う列においてステップ状に配置する
    ことを特徴とする請求項１に記載のレーザ照射装置。     In the orthogonal direction, the projection mask pattern gradually increases the number of openings from the outer row to the inner row of the projection mask pattern, and the openings are stepped in rows adjacent to each other. The laser irradiation apparatus according to claim 1, wherein the laser irradiation apparatus is disposed on the surface.
  3. 　前記投影レンズは、複数のマイクロレンズを含むマイクロレンズアレイであり、
    　前記投影マスクパターンは、前記直交方向において、互いに対応する一組の列を含み、当該互いに対応する一組の列の各々に設けられる前記開口部の合計数は、前記マイクロレンズアレイの一列に含まれる前記複数のマイクロレンズの数である
    ことを特徴とする請求項１または２に記載のレーザ照射装置。     The projection lens is a microlens array including a plurality of microlenses;
    The projection mask pattern includes a set of rows corresponding to each other in the orthogonal direction, and the total number of the openings provided in each of the set of rows corresponding to each other is included in a row of the microlens array. The laser irradiation apparatus according to claim 1, wherein the number of the plurality of microlenses is a number.
  4. 　前記投影マスクパターンは、前記互いに対応する一組の列の各々を、当該投影マスクパターンにおける前記所定の方向の中心線に対して、互いに逆側に配置する
    　ことを特徴とする請求項３に記載のレーザ照射装置。     The said projection mask pattern arrange | positions each of the said 1 set of mutually corresponding row | line | column to the mutually opposite side with respect to the centerline of the said predetermined direction in the said projection mask pattern. Laser irradiation device.
  5. 　前記投影マスクパターンは、前記互いに対応する一組の列の各々を、前記中心線から等しい距離に配置する
    　ことを特徴とする請求項４に記載のレーザ照射装置。     5. The laser irradiation apparatus according to claim 4, wherein the projection mask pattern is arranged such that each of the pair of rows corresponding to each other is at an equal distance from the center line.
  6. 　前記投影レンズは、薄膜トランジスタに含まれるソース電極とドレイン電極との間に被着されたアモルファスシリコン薄膜の所定の領域にレーザ光を照射して、ポリシリコン薄膜を形成する
    ことを特徴とする請求項１乃至５のいずれかに記載のレーザ照射装置。     The projection lens forms a polysilicon thin film by irradiating a predetermined region of an amorphous silicon thin film deposited between a source electrode and a drain electrode included in a thin film transistor, with a laser beam. The laser irradiation apparatus according to any one of 1 to 5.
  7. 　レーザ光を発生する第１のステップと、
    　ガラス基板上の複数の薄膜トランジスタの各々に被着されたアモルファスシリコン薄膜の所定の領域に、複数の開口部を含む投影マスクパターンが設けれた投影レンズを用いて、前記レーザ光を照射してアニール化処理を行う第２のステップと、
    　前記ガラス基板上の前記所定の方向に対するアニール化処理が完了した場合、当該所定の方向の直交方向に移動した後、再度、当該所定の方向に対するアニール化処理を行う第３のステップと、を含み、
    　第２のステップにおいて、前記直交方向において、前記投影マスクパターンの外側の列から内側の列に向けて、前記開口部の数を徐々に増加した当該投影マスクパターンを介して、前記レーザ光を照射する
    ことを特徴とする薄膜トランジスタの製造方法。     A first step of generating laser light;
    Using a projection lens in which a projection mask pattern including a plurality of openings is provided in a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate, the laser beam is irradiated and annealed. A second step of performing the conversion process;
    A third step of performing an annealing process in the predetermined direction again after moving in a direction orthogonal to the predetermined direction when the annealing process in the predetermined direction on the glass substrate is completed. ,
    In the second step, in the orthogonal direction, the laser light is irradiated through the projection mask pattern in which the number of openings is gradually increased from the outer row to the inner row of the projection mask pattern. A method of manufacturing a thin film transistor, comprising:
  8. 　第２のステップにおいて、前記直交方向において、前記投影マスクパターンの外側の列から内側の列に向けて、前記開口部の数を徐々に増加させるとともに、当該開口部を互いに隣り合う列においてステップ状に配置した当該投影マスクパターンを介して、前記レーザ光を照射する
    ことを特徴とする請求項７に記載の薄膜トランジスタの製造方法。     In the second step, in the orthogonal direction, the number of openings is gradually increased from the outer row to the inner row of the projection mask pattern, and the openings are stepped in rows adjacent to each other. The method of manufacturing a thin film transistor according to claim 7, wherein the laser light is irradiated through the projection mask pattern arranged on the substrate.
  9. 　前記投影レンズは、複数のマイクロレンズを含むマイクロレンズアレイであり、
    　第２のステップにおいて、前記直交方向において、互いに対応する一組の列を含み、当該互いに対応する一組の列の各々に設けられる前記開口部の合計数は、前記マイクロレンズアレイの一列に含まれる前記複数のマイクロレンズの数である前記投影マスクパターンを介して、前記レーザ光を照射する
    ことを特徴とする請求項８に記載の薄膜トランジスタの製造方法。     The projection lens is a microlens array including a plurality of microlenses;
    In the second step, a set of columns corresponding to each other in the orthogonal direction is included, and the total number of the openings provided in each of the set of columns corresponding to each other is included in a row of the microlens array. 9. The method of manufacturing a thin film transistor according to claim 8, wherein the laser light is irradiated through the projection mask pattern which is the number of the plurality of microlenses.
  10. 　第２のステップにおいて、前記互いに対応する一組の列の各々を、前記投影マスクパターンにおける前記所定の方向の中心線に対して、互いに逆側に配置した当該投影マスクパターンを介して、前記レーザ光を照射する
    ことを特徴とする請求項９に記載の薄膜トランジスタの製造方法。     In the second step, each of the pair of columns corresponding to each other is placed on the laser via the projection mask pattern arranged on the opposite side to the center line in the predetermined direction in the projection mask pattern. The method of manufacturing a thin film transistor according to claim 9, wherein light is irradiated.
  11. 　第２のステップにおいて、前記互いに対応する一組の列の各々を、前記中心線から等しい距離に配置した当該投影マスクパターンを介して、前記レーザ光を照射する
    ことを特徴とする請求項１０に記載の薄膜トランジスタの製造方法。     11. The laser beam irradiation according to claim 10, wherein, in the second step, each of the pair of columns corresponding to each other is irradiated with the laser light through the projection mask pattern arranged at an equal distance from the center line. The manufacturing method of the thin-film transistor of description.
  12. 　前記第２のステップにおいて、薄膜トランジスタに含まれるソース電極とドレイン電極との間に被着されたアモルファスシリコン薄膜の所定の領域にレーザ光を照射して、ポリシリコン薄膜を形成する
    ことを特徴とする請求項７乃至１１のいずれかに記載の薄膜トランジスタの製造方法。     In the second step, a polysilicon thin film is formed by irradiating a predetermined region of the amorphous silicon thin film deposited between the source electrode and the drain electrode included in the thin film transistor with a laser beam. The method for producing a thin film transistor according to claim 7.
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JPH11243057A (en) * 1998-02-26 1999-09-07 Sony Corp Method and device for manufacturing semiconductor device
JP2008227077A (en) * 2007-03-12 2008-09-25 Sharp Corp Masking structure for laser light, laser processing method, tft element, and laser processing apparatus
JP2012124366A (en) * 2010-12-09 2012-06-28 V Technology Co Ltd Laser annealing device and laser annealing method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260681A (en) * 1996-03-23 1997-10-03 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH11243057A (en) * 1998-02-26 1999-09-07 Sony Corp Method and device for manufacturing semiconductor device
JP2008227077A (en) * 2007-03-12 2008-09-25 Sharp Corp Masking structure for laser light, laser processing method, tft element, and laser processing apparatus
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