WO2018096992A1

WO2018096992A1 - Physical vapor-deposition target member and sputtering target member, and physical vapor-deposition film and layer structure manufacturing method

Info

Publication number: WO2018096992A1
Application number: PCT/JP2017/041030
Authority: WO
Inventors: 寛明久保; 康平川辺; 敦志三谷; 宗佑横山; 正信高巣
Original assignee: 宇部マテリアルズ株式会社; 日本タングステン株式会社
Priority date: 2016-11-25
Filing date: 2017-11-15
Publication date: 2018-05-31
Also published as: JPWO2018096992A1; CN109996903A; TW201829811A; KR20190085948A; DE112017005990T5

Abstract

The purpose of the present invention is to provide a physical vapor-deposition target member that has low deterioration of a foundation layer due to oxidation during formation of a physical vapor-deposition film, that produces few defects in a joining section between the physical vapor-deposition film and the foundation layer, that has good lattice regularity of the physical vapor-deposition film and the foundation layer, and that causes little alteration due to hydration of the physical vapor-deposition target member itself and the physical vapor-deposition film formed. The physical vapor-deposition target member comprises Mg, M (where M is a trivalent metal element), and O as principal constituents, and the molar ratios of Mg and M, when converted to MgO and M₂O₃ oxides, respectively, are in the range 70:30 to 10:90.

Description

Physical vapor deposition target member, sputtering target member, physical vapor deposition film, and layer structure manufacturing method

The present invention relates to a physical vapor deposition target member, a sputtering target member, a physical vapor deposition film, and a method for producing a layer structure.

In recent years, magnetic tunnel junction (MTJ) elements have attracted attention as magnetic recording elements that improve the recording density of magnetic recording apparatuses. The MTJ element has a structure in which a tunnel barrier layer is sandwiched between two ferromagnetic layers, that is, a three-layer structure of a ferromagnetic layer / tunnel barrier layer / ferromagnetic layer. As a conventional tunnel barrier layer, an Al oxide film (amorphous AlO _x film) having an amorphous structure or a crystalline MgO film oriented in (001) plane is used. However, the amorphous AlO _x film has a high junction resistance with the ferromagnetic layer, a large interface roughness with the ferromagnetic layer, a large variation in characteristics, and a small tunnel magnetoresistance ratio (TMR ratio). Therefore, it is not suitable for the tunnel barrier layer of the MTJ element. On the other hand, a crystalline MgO film is suitable for a tunnel barrier layer of an MTJ element because it has a small tunnel resistance (TR) and a large TMR ratio with respect to a ferromagnetic material having a bcc crystal structure such as Fe or FeCo. . Therefore, it is expected that the performance of the MTJ element is improved, the MTJ element is miniaturized, and the recording density of the magnetic recording apparatus including the MTJ element is further improved. However, since MgO is easily hydrated, it may react with moisture in the atmosphere to generate hydroxide on the surface, and there is concern about the alteration of the crystalline MgO film and the MgO sputtering target member for forming it. Is done.

Patent Document 1 describes a spinel structure MgAl ₂ O ₄ film in which Al is added to a crystalline MgO film. The spinel structure MgAl ₂ O ₄ film has a TR lower than that of an amorphous AlO _x film by an order of magnitude, a larger TMR ratio, a crystalline MgO compared to a ferromagnetic Co-based full Heusler alloy or CoFe alloy. Since the lattice matching is better than that of the film, it has been found that an epitaxial tunnel junction with few defects can be formed, and is highly expected as a tunnel barrier layer of an MTJ element.

Japanese Patent No. 5586028

Here, the manufacturing method of the spinel structure MgAl ₂ O ₄ film described in Patent Document 1 is as follows. That is, after laminating by sputtering Mg film and an Al film on the base of the ferromagnetic layers, or subjected to plasma oxidation treatment, or, MgAl ₂ by sputtering MgAl ₂ alloy on the base of the ferromagnetic layer After forming the alloy film, plasma oxidation is performed to oxidize and crystallize the metal film or the alloy film, thereby forming a spinel structure MgAl ₂ O ₄ film.

Since the spinel structure MgAl ₂ O ₄ film manufacturing method described in Patent Document 1 is subjected to plasma oxidation after forming a metal film or an alloy film, there is a concern about deterioration due to oxidation of the underlying ferromagnetic layer. . In addition, with the oxidation and crystallization of the metal film or alloy film, it is necessary to enter oxygen atoms into the metal film or alloy film or to rearrange the metal atoms in the metal film or alloy film. The For this reason, the removal of defects from the spinel structure MgAl ₂ O ₄ film and the epitaxial tunnel junction is not sufficient, and there are concerns about the limitations of downsizing the MTJ element and increasing the density of the magnetic recording device.

In the first and second aspects of the present invention, when the physical vapor deposition film is formed, there is little deterioration of the base due to oxidation, there are few defects generated at the junction between the physical vapor deposition film and the base, and the physical vapor deposition film and the base An object of the present invention is to provide a physical vapor deposition target member and a sputtering target member that have good lattice matching, have low hydration properties themselves and the physical vapor deposition film to be formed, and have little alteration due to hydration. The third aspect of the present invention provides a physical vapor deposition film in which the deterioration of the base due to oxidation is small, the number of defects generated at the joint with the base is small, the lattice matching with the base is good, and the alteration due to hydration is low The purpose is to do. According to the fourth aspect of the present invention, the deterioration of the base due to oxidation is small, the number of defects generated at the joint between the physical vapor deposition film and the base is small, the lattice matching between the physical vapor deposition film and the base is good, and further, due to hydration An object of the present invention is to provide a layer structure in which the TMR ratio is improved and miniaturization is expected because of little alteration.

(1) The first aspect of the present invention contains Mg, M (M is a trivalent metal element) and O as main components, and is converted into MgO and M ₂ O ₃ oxides of Mg and M, respectively. And a physical vapor deposition target member having a molar ratio of 70:30 to 10:90.

The physical vapor deposition film physically vapor-deposited on the base using a physical vapor deposition target member containing Mg, M (M is a trivalent metal element) and O as main components is oxygen necessary from the physical vapor deposition target member. Since (O) is supplied, an oxidation treatment after film formation is unnecessary. For this reason, there is little deterioration of the foundation | substrate by oxidation. In addition, since oxidation or crystallization of the metal film or alloy film is unnecessary, defects generated at the joint between the physical vapor deposition film and the base can be reduced. Further, physical vapor deposition is performed on a base using a physical vapor deposition target member having a molar ratio of Mg and M converted to MgO and M ₂ O ₃ oxides of 70:30 to 10:90, respectively. Thus, a physical vapor deposition film having good lattice matching with the base can be formed. Furthermore, since the physical vapor deposition target member and the physical vapor deposition film are not MgO, there is little alteration due to hydration and excellent stability such as hydration resistance.

(2) A second aspect of the present invention is a physical vapor deposition target characterized in that it contains Mg, M (M is a trivalent metal element), and O as main components and includes a crystal phase having a spinel structure. It relates to members.

The physical vapor deposition film physically vapor-deposited on the base using a physical vapor deposition target member containing Mg, M (M is a trivalent metal element) and O as main components is oxygen necessary from the physical vapor deposition target member. Since (O) is supplied, an oxidation treatment after film formation is unnecessary. For this reason, there is little deterioration of the foundation | substrate by oxidation. In addition, since oxidation or crystallization of the metal film or alloy film is unnecessary, defects generated at the joint between the physical vapor deposition film and the base can be reduced. In addition, by performing physical vapor deposition on a base using a physical vapor deposition target member including a crystal phase having a spinel structure, a physical vapor deposition film having good lattice matching with the base can be formed. Furthermore, since the physical vapor deposition target member and the physical vapor deposition film are not MgO, there is little alteration due to hydration and excellent stability such as hydration resistance.

(3) In the 1st or 2nd aspect of this invention, it is preferable that M is 1 or 2 chosen from the group which consists of Al and Ga. Forming a physical vapor deposition film having better lattice matching with the base by physical vapor deposition on the base using a physical vapor deposition target member where M is 1 or 2 selected from the group consisting of Al and Ga Can do.

(4) In the 1st or 2nd aspect of this invention, it is preferable that the light transmittance when thickness is 2 mm is 60% or less. As a use of a composition containing Mg, M (especially Al) and O as main components, a window material of an electric device or a manufacturing container is well known. do not need. Therefore, by configuring the physical vapor deposition target member so that the light transmittance when the thickness is 2 mm is 60% or less, the physical vapor deposition target member can be more easily and inexpensively manufactured.

(5) In the first or second aspect of the present invention, the dielectric loss at 10 GHz is preferably 45000 GHz or more in terms of the f · Q value. The dielectric loss of the physical vapor deposition target member at 10 GHz of 45,000 GHz or more in terms of the f · Q value reflects the small number of defects and inevitable impurities in the physical vapor deposition target member. By performing physical vapor deposition using such a physical vapor deposition target member, it is possible to form a uniform physical vapor deposition film with fewer defects and inevitable impurities.

(6) In the first or second aspect of the present invention, the whiteness is preferably 30 or more. A whiteness of 30 or more reflects that there are few inevitable impurities and defects in the target member for physical vapor deposition. By performing physical vapor deposition using such a physical vapor deposition target member, it is possible to form a uniform physical vapor deposition film with fewer inevitable impurities and defects.

(7) In the 1st or 2nd aspect of this invention, the target member for physical vapor deposition is suitable for a sputtering target member.

(8) According to a third aspect of the present invention, a physical vapor deposition film is physically vapor-deposited on a base using the physical vapor deposition target member of the first or second aspect. About.

The physical vapor deposition film physically deposited on the base using the physical vapor deposition target member of the first or second aspect is supplied with necessary oxygen (O) from the physical vapor deposition target member. No oxidation treatment is required. For this reason, there is little deterioration of the foundation | substrate by oxidation. In addition, since oxidation or crystallization of the metal film or alloy film is unnecessary, defects generated at the joint between the physical vapor deposition film and the base can be reduced. Further, a physical vapor deposition target member containing a crystal phase having a spinel structure, wherein the molar ratio of Mg and M, converted into oxides of MgO and M ₂ O ₃ , is 70:30 to 10:90, respectively. By using it and performing physical vapor deposition on the base, a physical vapor deposition film having good lattice matching with the base can be formed. Furthermore, since the physical vapor deposition film is not MgO, it is hardly altered by hydration and has excellent stability such as hydration resistance.

(9) In the fourth aspect of the present invention, a physical vapor deposition film is physically vapor-deposited on a base using the physical vapor deposition target member of the first or second aspect of the present invention, and the physical vapor deposition film is strongly The present invention relates to a method for manufacturing a layer structure, wherein a magnetic layer is formed, a base is a ferromagnetic layer, and a physical vapor deposition film is a tunnel barrier layer.

The physical vapor deposition film physically deposited on the base using the physical vapor deposition target member of the first or second aspect is supplied with necessary oxygen (O) from the physical vapor deposition target member. No oxidation treatment is required. For this reason, the base is less degraded by oxidation. In addition, since oxidation or crystallization of the metal film or alloy film is unnecessary, defects generated at the joint between the physical vapor deposition film and the base can be reduced. Further, a physical vapor deposition target member containing a crystal phase having a spinel structure, wherein the molar ratio of Mg and M, converted into oxides of MgO and M ₂ O ₃ , is 70:30 to 10:90, respectively. By using it and performing physical vapor deposition, a physical vapor deposition film having good lattice matching with the base can be formed. If the underlying layer is a ferromagnetic layer and the physical vapor deposition film is a tunnel barrier layer, a layer structure in which the tunnel barrier layer is sandwiched between two ferromagnetic layers is formed. Since this layer structure improves the TMR ratio, it is possible to manufacture a magnetic tunnel junction element that is smaller than the conventional one. Furthermore, since the physical vapor deposition film is not MgO, it is hardly altered by hydration and has excellent stability such as hydration resistance.

The physical vapor deposition target member of the present invention can be used for known physical vapor deposition methods such as resistance heating vapor deposition, sputtering, electron beam vapor deposition, molecular beam epitaxy, ion plating vapor deposition, and laser ablation. As an embodiment of the present invention, a sputtering target member used in the sputtering method will be described. The present embodiment described below does not unduly limit the contents of the present invention described in the claims, and all the configurations described in the present embodiment are indispensable as means for solving the present invention. Not always.

(1) Sputtering target member The sputtering target member of this embodiment contains Mg, M (M is a trivalent metal element), and O as a main component. The sputtering target member may contain a subcomponent in addition to the main component. A sputtering film formed by sputtering a sputtering target member containing Mg, M (M is a trivalent metal element) and O as main components is supplied with necessary oxygen (O) from the sputtering target member. The oxidation treatment after film formation is unnecessary. For this reason, there is little deterioration of the foundation | substrate by oxidation. In addition, since oxidation or crystallization of the metal film or alloy film is unnecessary, defects generated at the junction between the sputtered film and the base can be reduced. Furthermore, since the sputtering target member and the sputtered film are not MgO, there is little alteration due to hydration, and stability such as hydration resistance is excellent.

The molar ratio of Mg and M contained in the sputtering target member when converted to oxides of MgO and M ₂ O ₃ is preferably 70:30 to 10:90, more preferably 65:35 to 20:80. More preferably, it is 60:40 to 30:70, and particularly preferably 55:45 to 40:60. The crystal phase and lattice constant of the sputtered film can be controlled by adjusting the molar ratio of Mg and M contained in the sputtering target member when converted to MgO and M ₂ O ₃ oxides, respectively. Therefore, it is possible to form a sputtered film having good lattice matching with the base.

The sputtering target member preferably contains a crystal phase having a spinel structure. By sputtering a sputtering target member containing a crystal phase having a spinel structure, a sputtered film having good lattice matching with the base can be formed.

M contained in the sputtering target member is preferably 1 or 2 selected from the group consisting of Al and Ga. By sputtering a sputtering target member in which M is 1 or 2 selected from the group consisting of Al and Ga, a sputtered film with better lattice matching with the base can be formed.

The light transmittance of the sputtering target member when the thickness is 2 mm is preferably 60% or less, more preferably 45% or less. As a use of a composition containing Mg, M (especially Al) and O as main components, a window material of an electric device or a manufacturing container is well known, but a sputtering target member needs light permeability as much as the window material. do not do. By making the light transmittance within the above range, the sputtering target member can be produced more easily and inexpensively.

The inevitable impurities of the sputtering target member are at least 0.5% by mass, preferably 0.1% by mass or less, more preferably 0.01% by mass or less. By sputtering a sputtering target member with few inevitable impurities, a uniform sputtered film with fewer inevitable impurities and defects can be formed.

The dielectric loss of the sputtering target member at 10 GHz is preferably 45000 GHz or more, more preferably 50000 GHz or more, still more preferably 70000 GHz or more, and particularly preferably 80000 GHz or more in terms of f · Q value. A large f · Q value of dielectric loss reflects a small number of defects and inevitable impurities in the sputtering target member. By sputtering such a sputtering target member, a uniform sputtered film can be formed with fewer defects and inevitable impurities. The dielectric loss is expressed by tan δ or its inverse quality factor Q value (= 1 / tan δ). However, since it varies depending on the frequency, it is expressed by f · Q value which is the product of frequency f and Q value. Also often. The larger the f · Q value, the smaller the dielectric loss.

The whiteness of the sputtering target member is preferably 30 or more, more preferably 50 or more, still more preferably 60 or more, and particularly preferably 65 or more. High whiteness reflects that there are few inevitable impurities and defects in the sputtering target member. By sputtering such a sputtering target member, a uniform sputtered film can be formed with fewer defects and inevitable impurities. The whiteness is L * of CIE 1976 (L *, a *, b *). The closer the whiteness is to 100, the closer to white.

The surface roughness of the sputtering target member is preferably 5 μm or less, more preferably 2 μm or less, and even more preferably 1 μm or less. The smaller the surface roughness of the sputtering target member, that is, the smoother the surface, the more uniformly the surface of the sputtering target member can be sputtered, and there can be fewer defects and a uniform sputtered film can be formed.

The thickness and diameter of the sputtering target member can be changed to a desired thickness and diameter according to the sputtering apparatus, and as an example, the thickness is 2.0 mm or less.

The material of the sputtering target member is not particularly limited as long as it is uniform and dense, but is preferably made of a sintered body. A uniform and dense sputtering target member can be produced more easily and cheaply than other solid production methods such as melting and solidification.

The relative density of the sintered body is preferably 95% by mass or more, more preferably 98% by mass or more, further preferably 99% by mass or more, and particularly preferably 99.5% by mass or more. The higher the relative density of the sintered body, the denser and more uniform the sputtering target member, and with fewer defects, a uniform sputtered film can be formed.

The three-point bending strength of the sintered body is preferably 230 MPa or more, more preferably 250 MPa or more, still more preferably 300 MPa or more, and particularly preferably 320 MPa or more. The higher the bending strength of the sintered body, the denser and more uniform the sputtering target member, the fewer defects, and the formation of a uniform sputtered film. Note that JIS R1601 is used as a method for measuring the three-point bending strength.

When the particle size is the Heywood equivalent diameter obtained by converting the area of the particles into a circle, the average particle diameter of the crystal particles constituting the sintered body is not particularly limited as long as the sintered body can be made uniform and dense. The thickness is preferably 1 to 100 μm, more preferably 2 to 80 μm, still more preferably 2 to 60 μm, and particularly preferably 2 to 50 μm. By sputtering a uniform and dense sputtering target member, a uniform sputtered film with fewer defects can be formed.

The D90 / D10 of the crystal particles constituting the sintered body is not particularly limited as long as the sintered body can be made uniform and dense, but is preferably 4 or less, more preferably 3 or less, and even more preferably 2.5 or less. Particularly preferably, it is 2.3 or less. By sputtering a uniform and dense sputtering target member, a uniform sputtered film with fewer defects can be formed.

The average particle size is determined by obtaining the particle size of 200 crystal particles and using a value (D50) of 50% of the particle size distribution (number basis). Similarly, 10% and 90% of the particle size distribution (number basis) are used for D10 and D90.

(2) Manufacturing method of sputtering target member The manufacturing method of the sputtering target member of this embodiment is the raw material mixing process which measures and mixes the raw material powder and obtains a slurry, and dry-granulates the slurry to obtain granulated powder. A dry granulation step, a molding step for forming a granulated powder to obtain a molded body, a sintering step for sintering the molded body to obtain a sintered body, and a sputtering target member by processing the outer shape of the sintered body And an outer shape processing step. Hereinafter, the manufacturing method of a sputtering target member is demonstrated in more detail.

(2-1) Raw Material Mixing Step MgO, M ₂ O ₃ (M is a trivalent metal element) powder can be used as a raw material for the sputtering target member. M is preferably 1 or 2 selected from the group consisting of Al and Ga. The raw material contains MgO and M ₂ O ₃ as main components, and may further contain subcomponents as necessary. The purity of the raw material powder is preferably higher, at least 99.5% by mass or more, preferably 99.9% by mass or more, more preferably 99.99% by mass or more, and further preferably 99.999% by mass or more. is there. A sputtering target member with few inevitable impurities can be obtained by using a raw material powder with high purity. By sputtering this sputtering target member, it is possible to form a uniform sputtered film with fewer inevitable impurities and defects.

When using the Heywood equivalent diameter in which the area of the particle is converted into a circle, the smaller the average particle diameter (D50) of the raw material powder, the more the sintering is promoted and the uniform and dense sputtering target member is obtained. Hereinafter, it is preferably 1 μm or less, more preferably 0.5 μm or less.

The raw material of the sputtering target member is not limited to MgO and M ₂ O ₃ oxides, and compounds such as carbonates and nitrates that become oxides during the manufacturing process can also be used.

The raw material powder is weighed. The molar ratio of Mg and M when converted to oxides of MgO and M ₂ O ₃ is preferably 70:30 to 10:90, more preferably 65:35 to 20:80, and still more preferably 60: 40 to 30:70, particularly preferably 55:45 to 40:60. By adjusting the molar ratio of Mg and M, the crystal phase and lattice constant of the sputtered film can be controlled. Therefore, it is possible to form a sputtered film having good lattice matching with the base.

Mix the raw material powder to obtain a slurry. The mixing method is not particularly limited as long as the raw material powder can be uniformly mixed, but, for example, a wet ball mill is suitable. In the wet ball mill, raw material powder, a dispersion medium, and balls are put in a container and mixed (wet mixing). As the dispersion medium, water, or an organic solvent such as alcohol or methanol can be used. The mass ratio of the raw material and the dispersion medium is not particularly limited as long as the raw material powder can be mixed uniformly, but is generally 15:85 to 75:25. In order to mix the raw material powder uniformly, a dispersant may be further added. The dispersant is not particularly limited as long as it does not decompose and remain in the degreasing and sintering processes described later. The mixing time is not particularly limited as long as the raw material powder can be uniformly mixed, but is preferably 10 hours or more. If the raw material powder is not uniformly mixed, composition and density unevenness occur in the sputtering target member, and the strength tends to decrease. Further, when such a sputtering target member is sputtered, abnormal discharge is likely to occur during sputtering, and a non-uniform sputtered film is likely to be formed with many defects.

In the raw material mixing step, the raw material powder is mixed and then the slurry is dried to obtain a dry powder, and the dry powder is heat-treated to obtain a heat-treated powder in which a part or all of the raw material is composed of a composite oxide. You may further include the process, the heat processing powder | flour, the methanol of a dispersion medium, and an alumina ball | bowl, and the grinding | pulverization process which wet-grinds and obtains a slurry. Since the reaction of the raw material powder proceeds by the heat treatment, the sputtering target member obtained in the subsequent sintering step is likely to contain a crystal phase having a spinel structure. The particle size of the heat-treated powder is preferably smaller because it facilitates the sintering in the subsequent sintering step. For this reason, the pulverization step may be further combined with dry pulverization before wet pulverization.

(2-2) Dry granulation step The slurry obtained in the raw material mixing step is dried and granulated to obtain a granulated powder suitable for molding. A molding aid may be added to the slurry as needed before drying. Although there is no restriction | limiting in particular in a shaping | molding adjuvant, Generally polyvinyl alcohol (PVA), polyethyleneglycol (PEG), cellosol, paraffin, etc. are used in many cases. The drying method is not particularly limited, and for example, a rotary evaporator and a spray dryer are suitable. The higher purity of the granulated powder is suitable, and it is at least 99.5% by mass, more preferably 99.9% by mass, and further preferably 99.99% by mass or more.

(2-3) Molding step The granulated powder is molded to obtain a molded body having a predetermined shape. As the molding method, known molding methods such as uniaxial molding using a mold and CIP (cold isostatic pressing) molding can be used alone or in combination. Although there will be no restriction | limiting in particular if a shaping | molding pressure can obtain a favorable molded object, Generally 100 Mpa or more is preferable. In addition, when performing HP (hot uniaxial pressing) sintering or HIP (hot isostatic pressing) sintering in the sintering process described later, the molding process may be omitted or the molding pressure may be reduced.

(2-4) Sintering step The compact is sintered to obtain a sintered body. By sintering, a uniform and dense sputtering target member can be produced more easily and cheaply than other solid production methods. As the sintering method, known sintering methods such as atmospheric pressure sintering, HP sintering, and HIP sintering can be used alone or in combination. The sintering temperature is not particularly limited as long as a sintered body can be obtained, but is preferably 1800 ° C. or lower because normal pressure sintering can be performed in an air atmosphere. In HP sintering and HIP sintering, a sintered body having a high density can be obtained at a sintering temperature lower than that of atmospheric pressure sintering. Moreover, when a granulated powder contains a dispersing agent or a shaping | molding adjuvant, in order to decompose | disassemble and remove these, it is preferable to degrease before sintering. The degreasing temperature is not particularly limited, but a temperature at which the dispersant and the molding aid are completely decomposed and removed, and a temperature rising rate are preferable. In addition, the manufacturing method of a sputtering target member may use other solid manufacturing methods, such as melt solidification, if the uniform and precise | minute sputtering target member can be manufactured.

(2-5) External shape processing step The sintered body is processed into a desired shape to obtain a sputtering target member. A known method such as cutting, grinding, polishing, or the like can be used as a method for the outer shape processing. The sputtering target member is bonded to a backing plate and is used for sputtering as a sputtering target.

(3) Application of sputtering target member As an application example of the sputtering target member of this embodiment, a layer structure in which a tunnel barrier layer is sandwiched between two ferromagnetic layers, that is, a base ferromagnetic layer / tunnel barrier layer / upper strength. An MTJ element having a three-layer structure of magnetic layers will be described.

The MTJ element is formed on the substrate. As the substrate, for example, spinel MgAl ₂ O ₄ single crystal, Si single crystal, GaAs single crystal, or thermally oxidized Si can be used. For example, a buffer layer made of MgO may be formed on the surface of the substrate as necessary.

A base ferromagnetic layer (base), a tunnel barrier layer, and an upper ferromagnetic layer are sequentially formed on the substrate. The underlying ferromagnetic layer, tunnel barrier layer, and upper ferromagnetic layer are, for example, a Co-based full Heusler alloy (for example, Co ₂ FeAl _0.5 Si _0.5 ), the sputtering target member of this embodiment, and CoFe, respectively. An alloy (for example, Co ₇₅ Fe ₂₅ alloy) can be formed by sequentially sputtering. The tunnel barrier layer (sputtered film) formed by sputtering the sputtering target member of the present embodiment is supplied with necessary oxygen (O) from the sputtering target member, so that an oxidation treatment after film formation is unnecessary. . For this reason, there is little deterioration of the underlying ferromagnetic layer due to oxidation. Further, since the tunnel barrier layer does not need to be oxidized or crystallized, defects generated at the junction between the tunnel barrier layer and the underlying ferromagnetic layer can be reduced. Further, the tunnel barrier layer has good lattice matching with the base ferromagnetic layer made of a Co-based full Heusler alloy and the upper ferromagnetic layer made of a CoFe alloy. Therefore, the MTJ element having the underlying ferromagnetic layer / tunnel barrier layer / upper ferromagnetic layer has an improved TMR ratio, and thus a smaller MTJ element can be manufactured. A magnetic recording apparatus provided with this MTJ element can further increase the recording density. Furthermore, since the tunnel barrier layer is not MgO, it is hardly altered by hydration and has excellent stability such as hydration resistance.

The use of the sputtering target member of the present embodiment is not limited to the sputtering method. For example, known physical properties such as resistance heating vapor deposition, electron beam vapor deposition, molecular beam epitaxy, ion plating vapor deposition, and laser ablation. Those skilled in the art will readily understand that they can be used in vapor deposition.

Hereinafter, embodiments of the present invention will be described in detail.

(1) Production of sputtering target member (1-1) Example 1
As raw materials, an MgO powder having an average particle size of 0.2 μm and a purity of 99.98% by mass and an Al ₂ O ₃ powder having an average particle size of 0.15 μm and a purity of 99.99% by mass were used. Weighing was performed so that the molar ratio of MgO to Al ₂ O ₃ was 50:50. Into a resin ball mill container, methanol as a dispersion medium, raw material powder, and nylon balls were placed and mixed (wet mixing) for 15 hours to obtain a slurry. The slurry was dried using a rotary evaporator (drying step), and the obtained dry powder was heat treated (heat treatment step) at 1000 ° C. in an air atmosphere to obtain heat treated powder. The heat-treated powder was dry pulverized, then placed in a resin ball mill container with methanol as a dispersion medium, the dry-ground pulverized heat-treated powder and alumina balls, and wet pulverized (pulverization step) to obtain a slurry ( Raw material mixing step). The slurry was dried using a rotary evaporator, and the obtained dry powder was crushed and granulated to obtain granulated powder (dry granulation step).

The granulated powder was HP sintered in an Ar atmosphere at 1500 ° C. and a pressure of 20 MPa to obtain an HP sintered body. The HP sintered body was further subjected to HIP sintering in an Ar atmosphere, a temperature range of 1400 ° C. to 1550 ° C. and a pressure of 100 MPa to obtain a HIP sintered body (sintering step). Since the HIP sintered body is reduced by sintering in an inert gas atmosphere, an oxidation treatment was performed for 5 hours at 1500 ° C. and normal pressure in an oxygen-containing atmosphere to obtain a sintered body. The sintered body was processed into a desired shape (outer shape processing step), and the obtained sample was used for evaluation.

(1-2) Examples 2, 3
A sample was prepared in the same process as in Example 1 except that the molar ratio of MgO: Al ₂ O ₃ was 40:60 and 30:70, and was used for evaluation.

(1-3) Example 4
The same raw material powder as in Example 1 was used and weighed so that the molar ratio of MgO: Al ₂ O ₃ was 20:80. The same wet mixing as in Example 1 was performed to obtain a slurry (raw material mixing step). The slurry was dried using a rotary evaporator to obtain a dry powder. The dried powder was crushed and granulated without heat treatment to obtain a granulated powder (dry granulation step). After the granulated powder was molded at a pressure of 100 MPa (molding process), it was sintered at 1750 ° C. and atmospheric pressure for 3 hours to obtain a sintered body (sintering process). The sintered body was processed into a desired shape (outer shape processing step), and the obtained sample was used for evaluation.

(1-4) Examples 5 to 7
A sample was prepared in the same process as in Example 4 except that the molar ratio of MgO: Al ₂ O ₃ was set to 10:90, 60:40, and 70:30, and was used for evaluation.

(1-5) Example 8
The same raw material powder as in Example 1 was used and weighed so that the molar ratio of MgO: Al ₂ O ₃ was 50:50. The same wet mixing as in Example 1 was performed to obtain a slurry. The slurry was dried using a rotary evaporator to obtain a dry powder. The dried powder was heat treated at 1000 ° C. in an air atmosphere to obtain heat treated powder. The heat-treated powder was directly granulated without being crushed. The granulated powder was subjected to HP sintering and HIP sintering similar to Example 1 to obtain a sintered body. The sintered body was processed into a desired shape, and the obtained sample was used for evaluation.

(1-6) Example 9
A sample was prepared in the same process as in Example 4 except that the molar ratio of MgO: Al ₂ O ₃ was set to 30:70, and used for evaluation.

(1-7) Example 10
The same raw material mixing step (including a drying step, a heat treatment step and a pulverization step) and a dry granulation step as in Example 1 were performed to obtain granulated powder. The granulated powder was oxidized in an oxygen-containing atmosphere at 1700 ° C. and normal pressure for 5 hours. The oxidized powder was directly granulated without being pulverized, and subjected to the same sintering process (HP sintering, HIP sintering and oxidation process) and outer shape processing process as in Example 1, and the obtained sample Was used for evaluation.

(2) Evaluation method About the obtained sample, the following items were evaluated.

(2-1) Relative density The density of a sample can be determined by, for example, the Archimedes method. The relative density of the sample can be represented by the ratio of the actually measured sample density to the theoretical density in the sample composition (the product of the theoretical density and the volume ratio of the crystal phase constituting the sample).

(2-2) Constituent phase, spinel phase volume ratio, spinel phase lattice constant, spinel phase composition Sample crystal phase (constituent phase), constituent spinel phase volume ratio and spinel phase lattice constant are X-ray diffraction It can be obtained from the pattern. For the X-ray diffraction pattern obtained using the XRD apparatus (D8ADVANCE manufactured by Bruker AXS), the volume ratio and lattice constant of the spinel phase are calculated using Rietveld analysis software (TOPAS manufactured by Bruker AXS). Also, the composition of the spinel phase: _{x of} Mg _x Al _2-2x O _3-2x is obtained from the lattice constant.

(2-3) Average particle diameter, D90 / D10
The particle size of the crystal particles constituting the sample can be obtained by image analysis of the crystal particles on the mirror polished surface of the sample. That is, the Heywood equivalent diameter which converted the area of the crystal grain in the mirror polishing surface into a circle is used for the grain size of a crystal grain. As the average particle size, the particle size of 200 crystal particles is obtained, and a value (D50) of 50% of the particle size distribution (number basis) is used. Similarly, 10% and 90% of the particle size distribution are used for D10 and D90.

(2-4) Whiteness As the whiteness of the sample, L * of CIE 1976 (L *, a *, b *) is used. The whiteness value is closer to 100 as the value is closer to 100. A sample having a thickness of 2 mm is measured by a reflection method (JIS Z-8722) using a color meter (ZE6000 manufactured by Nippon Denshoku Industries Co., Ltd.), and the calculated value is used.

(2-5) Light transmittance The light transmittance of the sample is determined by measuring the total light transmittance of the sample having a thickness of 2 mm with an integrating sphere using a spectrophotometer (JASCO V-670), and a wavelength of 400 to 800 nm. The average light transmittance is used.

(2-6) Dielectric loss The dielectric loss of a sample can be determined by the waveguide method. The quality factor Q value is measured at a measurement frequency of 10 GHz using a network analyzer (Agilent Technology 8720ES) by placing a sample in a waveguide. Here, f · Q value (GHz), which is the product of measurement frequency f (GHz) and Q value, is used as an index of dielectric loss. The larger the f · Q value, the smaller the dielectric loss.

(2-7) Strength Three-point bending strength (JIS R1601) is used as the sample strength.

(2-8) Film Formation Test The obtained sample was bonded with a Cu backing plate with In and placed in a sputtering apparatus (ULVAC CSL) as a sputtering target, and observed for the presence of abnormal discharge during sputtering.

(2-9) Inevitable impurities Inductively coupled plasma (ICP) analysis is performed on the concentration of inevitable impurities contained in the sample.

(3) Evaluation results Table 1 shows the evaluation results.

(3-1) Examples 1 to 3
In Examples 1 to 3, the relative density was as high as 99.6 to 99.8% by mass. The volume ratio of the spinel phase in the constituent phase is 100%, and the composition of the spinel phase reflects the molar ratio of the raw material MgO to Al ₂ O ₃ of 50:50 to 30:70, and x = 0.5 to 0.3 (Mg _{0.5 to 0.3} Al _{1 to 1.4} O _{2 to 2.4} ). This is presumably because the reaction of the raw material powder was promoted by the heat treatment step before granulation. The average particle size (D50) of the sintered body was 2.1 to 2.4 μm, and D90 / D10 was 2.4 to 3.6. The whiteness was 66 to 75, and the light transmittance was 40 to 45%. Further, the f · Q value was as low as 74000 to 89000 GHz, and the bending strength was 320 to 345 MPa, which was a sufficient strength as a sputtering target member. There was little abnormal discharge during sputtering, and good film formation was possible.

(3-2) Examples 4 to 7
In Examples 4 to 7, the relative density was as high as 99.5 to 100% by mass. In addition, the volume ratio of the spinel phase in the constituent phases was as low as 16 to 88%. In addition, in Examples 4 and 5, an Al ₂ O ₃ phase was observed, and in Examples 6 and 7, an MgO phase was observed. The composition of the spinel phase was x = 0.48 to 0.5 (Mg _{0.48 to 0.5} Al _{1.04 to 1} O _{2.04 to 2} ). The average particle diameter (D50) of the sintered body is 5.2 to 6.5 μm, which is larger than Examples 1 to 3. This is probably because the sintering temperature was high and the grains grew. D90 / D10 was 2.2 to 3.2. The whiteness is 77 to 82, which is white, and the light transmittance is 27 to 36%, which is lower than those of Examples 1 to 3. The f · Q value was as low as 88000 to 107000 GHz, and the bending strength was 340 to 385 MPa, which was sufficient for a sputtering target member. There was little abnormal discharge during sputtering, and good film formation was possible.

(3-3) Example 8
In Example 8, the relative density was as high as 99.8% by mass, the volume ratio of the spinel phase was 100%, and the composition of the spinel phase was x = 0.5 (Mg _0.5 AlO ₂ ). The whiteness was 30 and black, and the light transmittance was 1%. The f · Q value was 48000 GHz.

(3-4) Example 9
In Example 9, the relative density was 96.5% by mass, the spinel phase volume ratio was 100%, and the composition of the spinel phase was x = 0.5 (Mg _0.5 AlO ₂ ). The average particle diameter (D50) of the sintered body was 1.6 μm, and D90 / D10 was 2.6. The whiteness was 98 and white, the light transmittance was 1%, and the f · Q value was 48000 GHz.

(3-5) Example 10
In Example 10, the relative density was as high as 99.8% by mass, the volume ratio of the spinel phase was 100%, and the composition of the spinel phase was x = 0.5 (Mg _0.5 AlO ₂ ). The average particle diameter (D50) of the sintered body was as large as 12 μm.

(3-6) Inevitable impurities The concentrations of inevitable impurities in Examples 1 to 10 were all from several ppm to below the lower limit of measurement.

Although the present embodiment has been described in detail as described above, it will be easily understood by those skilled in the art that many modifications can be made without departing from the novel matters and effects of the present invention. Therefore, all such modifications are included in the scope of the present invention. For example, in the specification, a term described at least once together with a different term having a broader meaning or the same meaning can be replaced with the different term anywhere in the specification. Further, the configuration and operation of the physical vapor deposition target member, the physical vapor deposition film, the layer structure, and the like are not limited to those described in the present embodiment, and various modifications are possible.

Claims

Mg and M (M is a trivalent metal element) and O as main components,
A target member for physical vapor deposition, wherein the molar ratio of Mg and M when converted to MgO and M 2 O 3 oxides is 70:30 to 10:90, respectively.
Mg and M (M is a trivalent metal element) and O as main components,
A physical vapor deposition target member comprising a crystal phase having a spinel structure.
The physical vapor deposition target member according to claim 1 or 2, wherein the M is 1 or 2 selected from the group consisting of Al and Ga.
The target member for physical vapor deposition according to any one of claims 1 to 3, wherein the light transmittance when the thickness is 2 mm is 60% or less.
The target member for physical vapor deposition according to any one of claims 1 to 4, wherein the dielectric loss at 10 GHz is 45,000 GHz or more in terms of fQ value.
The target member for physical vapor deposition according to any one of claims 1 to 5, wherein the whiteness is 30 or more.
A sputtering target member comprising the physical vapor deposition target member according to any one of claims 1 to 6.
A method for producing a physical vapor deposition film, comprising physically vapor-depositing a physical vapor deposition film on a base using the physical vapor deposition target member according to any one of claims 1 to 6.
A physical vapor deposition film is physically vapor-deposited on a base using the physical vapor deposition target member according to any one of claims 1 to 6,
Forming a ferromagnetic layer on the physical vapor deposition film;
The base structure is a ferromagnetic layer, and the physical vapor deposition film is a tunnel barrier layer.